Produkte > GT0
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||
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| GT001 | POWERDATA TECHNOLOGIES | Description: POWERDATA TECHNOLOGIES - GT001 - Tülle, 12 mm, 30 mm tariffCode: 85443000 productTraceability: No rohsCompliant: YES Kabeldurchmesser, min.: 12mm euEccn: NLR isCanonical: Y hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Kabeldurchmesser, max.: 30mm Produktpalette: - SVHC: To Be Advised | auf Bestellung 101 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT0036-17M000 | NMB Technologies Corporation | Description: HYBRID 17 STEP MOTOR LOW BACKLAS Features: Flatted Shaft Packaging: Bulk Voltage - Rated: 24VDC Size / Dimension: Square - 1.654" x 1.654" (42.00mm x 42.00mm) Type: Hybrid Gear Motor Operating Temperature: -10°C ~ 50°C Termination Style: Wire Leads Step Angle: 0.5° Torque - Holding (oz-in / mNm): 49.56 / 350 Coil Type: Unipolar Diameter - Shaft: 0.236" (6.00mm) Mounting Hole Spacing: 1.220" (31.00mm) Length - Shaft and Bearing: 0.787" (20.00mm) NEMA Frame Size: 17 Current Rating (Amps): 1 A Coil Resistance: 3.1 Ohms Steps per Revolution: 720.0 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT0036-23M201 | NMB Technologies Corporation | Description: HYBRID 23 STEP MOTOR LOW BACKLAS Features: Flatted Shaft Packaging: Bulk Voltage - Rated: 24VDC Size / Dimension: Square - 2.362" x 2.362" (60.00mm x 60.00mm) Type: Hybrid Gear Motor Operating Temperature: -10°C ~ 50°C Termination Style: Wire Leads Step Angle: 0.5° Torque - Holding (oz-in / mNm): 177.04 / 1250 Coil Type: Unipolar Diameter - Shaft: 0.315" (8.00mm) Mounting Hole Spacing: 1.949" (49.50mm) Length - Shaft and Bearing: 1.260" (32.00mm) NEMA Frame Size: 24 Current Rating (Amps): 900 mA Coil Resistance: 5.8 Ohms Steps per Revolution: 720.0 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT0043 | Marathon Motors | Description: 1800RPM, 75HP, 3PH, 230/460V, 36 Packaging: Bulk Voltage - Rated: 208 ~ 230/460VAC Function: Standard RPM: 1800 RPM Type: AC Motor Part Status: Active | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT0072-17M000 | NMB Technologies Corporation | Description: HYBRID 17 STEP MOTOR LOW BACKLAS Features: Flatted Shaft Packaging: Bulk Voltage - Rated: 24VDC Size / Dimension: Square - 1.654" x 1.654" (42.00mm x 42.00mm) Type: Hybrid Gear Motor Operating Temperature: -10°C ~ 50°C Termination Style: Wire Leads Step Angle: 0.25° Torque - Holding (oz-in / mNm): 99.1 / 700 Coil Type: Unipolar Diameter - Shaft: 0.236" (6.00mm) Mounting Hole Spacing: 1.220" (31.00mm) Length - Shaft and Bearing: 0.787" (20.00mm) NEMA Frame Size: 17 Current Rating (Amps): 1 A Coil Resistance: 3.1 Ohms Steps per Revolution: 1440 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT0072-23M201 | NMB Technologies Corporation | Description: HYBRID 23 STEP MOTOR LOW BACKLAS Features: Flatted Shaft Packaging: Bulk Voltage - Rated: 24VDC Size / Dimension: Square - 2.362" x 2.362" (60.00mm x 60.00mm) Type: Hybrid Gear Motor Operating Temperature: -10°C ~ 50°C Termination Style: Wire Leads Step Angle: 0.25° Torque - Holding (oz-in / mNm): 354.07 / 2500 Coil Type: Unipolar Diameter - Shaft: 0.315" (8.00mm) Mounting Hole Spacing: 1.949" (49.50mm) Length - Shaft and Bearing: 1.260" (32.00mm) NEMA Frame Size: 24 Current Rating (Amps): 900 mA Coil Resistance: 5.8 Ohms Steps per Revolution: 1440.0 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT007N04TL | Goford Semiconductor | Description: N40V,150A,RD<1.5M@10V,VTH1.0V~2. Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7363 pF @ 20 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT009N04D5 | Goford Semiconductor | Description: N40V,100A,RD<1.3M@10V,VTH1.0V~2. Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 20A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6864 pF @ 20 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT01-C100R4-8P | MITSUBISHI | Description: MITSUBISHI - GT01-C100R4-8P - RS-422-KABEL, 10M, GRAPHISCHES TERMINAL Art des Zubehörs: Kabel, RS-422 Zur Verwendung mit: Grafische Bedienterminals der Produktreihe GT10 GOT1000 von Mitsubishi Produktpalette: GT10 SVHC: No SVHC (16-Jan-2020) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT01-C10R4-8P | MITSUBISHI | Description: MITSUBISHI - GT01-C10R4-8P - RS-422-KABEL, 1M, GRAPHISCHES TERMINAL Art des Zubehörs: Kabel, RS-422 Zur Verwendung mit: Grafische Bedienterminals der Produktreihe GT10 GOT1000 von Mitsubishi Produktpalette: GT10 SVHC: No SVHC (16-Jan-2020) | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT01-C30R2-6P | MITSUBISHI | Description: MITSUBISHI - GT01-C30R2-6P - RS-232-KABEL, 3M, GRAPHISCHES TERMINAL Art des Zubehörs: Kabel, RS-232 Zur Verwendung mit: Grafische Bedienterminals der Produktreihe GT10 GOT1000 von Mitsubishi Produktpalette: GT10 SVHC: No SVHC (16-Jan-2020) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT01-C30R4-8P | MITSUBISHI | Description: MITSUBISHI - GT01-C30R4-8P - RS-422-KABEL, 3M, GRAPHISCHES TERMINAL tariffCode: 85444290 Art des Zubehörs: Kabel, RS-422 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA Zur Verwendung mit: Grafische Bedienterminals der Produktreihe GT10 GOT1000 von Mitsubishi usEccn: EAR99 Produktpalette: GT10 SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT0100 | N/A | 00+ PLCC | auf Bestellung 90 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT0100-17M000 | NMB Technologies Corporation | Description: HYBRID 17 STEP MOTOR LOW BACKLAS Features: Flatted Shaft Packaging: Bulk Voltage - Rated: 24VDC Size / Dimension: Square - 1.654" x 1.654" (42.00mm x 42.00mm) Type: Hybrid Gear Motor Operating Temperature: -10°C ~ 50°C Termination Style: Wire Leads Step Angle: 0.18° Torque - Holding (oz-in / mNm): 141.63 / 1000 Coil Type: Unipolar Diameter - Shaft: 0.236" (6.00mm) Mounting Hole Spacing: 1.220" (31.00mm) Length - Shaft and Bearing: 0.787" (20.00mm) NEMA Frame Size: 17 Current Rating (Amps): 1 A Coil Resistance: 3.1 Ohms Steps per Revolution: 2000 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT0100-23M201 | NMB Technologies Corporation | Description: HYBRID 23 STEP MOTOR LOW BACKLAS Features: Flatted Shaft Packaging: Bulk Voltage - Rated: 24VDC Size / Dimension: Square - 2.362" x 2.362" (60.00mm x 60.00mm) Type: Hybrid Gear Motor Operating Temperature: -10°C ~ 50°C Termination Style: Wire Leads Step Angle: 0.18° Torque - Holding (oz-in / mNm): 424.93 / 3000 Coil Type: Unipolar Diameter - Shaft: 0.315" (8.00mm) Mounting Hole Spacing: 1.949" (49.50mm) Length - Shaft and Bearing: 1.260" (32.00mm) NEMA Frame Size: 24 Current Rating (Amps): 900 mA Coil Resistance: 5.8 Ohms Steps per Revolution: 2000.0 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT010N10TL | Goford Semiconductor | Description: MOSFET N-CH 100V 370A 400W 1.35M Packaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 370A (Tc) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 184 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13166 pF @ 50 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT010N10TL | Goford Semiconductor | Description: MOSFET N-CH 100V 370A 400W 1.35M Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 370A (Tc) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 184 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13166 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT011N03D5E | Goford Semiconductor | Description: MOSFET N-CH ESD 30V 209A DFN5*6- Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 209A (Tc) Rds On (Max) @ Id, Vgs: 0.95mOhm @ 10A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT011N03D5E | Goford Semiconductor | Description: MOSFET N-CH ESD 30V 209A DFN5*6- Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 209A (Tc) Rds On (Max) @ Id, Vgs: 0.95mOhm @ 10A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6503 pF @ 15 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT011N03D5E | Goford Semiconductor | Description: MOSFET N-CH ESD 30V 209A DFN5*6- Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 209A (Tc) Rds On (Max) @ Id, Vgs: 0.95mOhm @ 10A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 15 V | auf Bestellung 4987 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT011N03ME | Goford Semiconductor | Description: MOSFET N-CH ESD 30V A TO-263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 209A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 10A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V | auf Bestellung 794 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT011N03ME | Goford Semiconductor | Description: MOSFET N-CH ESD 30V A TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 209A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 10A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT011N03TE | Goford Semiconductor | Description: MOSFET N-CH ESD 30V 209A 89W TO Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 209A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5988 pF @ 15 V | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT011N03TLE | Goford Semiconductor | Description: MOSFET N-CH 30V 250A 300W 1.2M( Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 10A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6278 pF @ 15 V | auf Bestellung 1990 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT011N03TLE | Goford Semiconductor | Description: MOSFET N-CH 30V 250A 300W 1.2M( Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 10A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6278 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT011N03TLE | Goford Semiconductor | Description: MOSFET N-CH 30V 250A 300W 1.2m( Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 10A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6278 pF @ 15 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT013N04D5 | Goford Semiconductor | Description: N40V,195A,RD<1.7M@10V,VTH2.0V~4. Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3927 pF @ 20 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT013N04D5 | GOFORD Semiconductor | N-CH,40V,195A,RD(max) Less Than 1.7mOhm at 10V,VTH 2V to 4V, DFN5x6-8L | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT013N04D5 | Goford Semiconductor | Description: MOSFET N-CH 40V 195A 96W 1.7m(ma Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3927 pF @ 20 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT013N04Q | Goford Semiconductor | Description: MOSFET N-CH 40V 195A 96W TO-247 Packaging: Tube Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 20 V | auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT013N04TI | Goford Semiconductor | Description: MOSFET N-CH 40V 220A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3986 pF @ 20 V | auf Bestellung 38 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT013N04TI | GOFORD Semiconductor | N-CH,40V,220A,RD(max) Less Than 2.5mOhm at 10V,VTH 2V to 5V, TO-220 | auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT015N06TL | Goford Semiconductor | Description: MOSFET N-CH 60V 350A 350W 1M(MA Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 80A, 10V Power Dissipation (Max): 350W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10694 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT015N06TL | Goford Semiconductor | Description: MOSFET N-CH 60V 350A 350W 1M(MA Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 80A, 10V Power Dissipation (Max): 350W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10694 pF @ 30 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT015N06TL | Goford Semiconductor | Description: MOSFET N-CH 60V 350A 350W 1m(ma Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 80A, 10V Power Dissipation (Max): 350W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10694 pF @ 30 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT015N10TL | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 365A; 395W; TOLL Type of transistor: N-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: 100V Drain current: 365A Power dissipation: 395W Case: TOLL Gate-source voltage: ±20V Mounting: SMD Gate charge: 260nC Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT015N10TL | Goford Semiconductor | Description: MOSFET,N-CH,100V,365A,395W,TOLL- Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 365A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 395W Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 30 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT015N10TL | GOFORD Semiconductor | GT015N10TL | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT016N10Q | Goford Semiconductor | Description: MOSFET N-CH 100V 228A TO-247 Packaging: Tube Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 228A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9530 pF @ 50 V | auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT016N10TL | Goford Semiconductor | Description: MOSFET N-CH 100V 362A TOLL-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 362A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 15A, 10V Power Dissipation (Max): 450W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10037 pF @ 50 V | auf Bestellung 1344 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT016N10TL | Goford Semiconductor | Description: MOSFET N-CH 100V 362A TOLL-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 362A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 15A, 10V Power Dissipation (Max): 450W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10037 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT016N10TL | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 362A; 380W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 362A Power dissipation: 380W Case: TOLL Gate-source voltage: ±20V Mounting: SMD Gate charge: 165nC Kind of channel: enhancement Technology: SGT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT019N04D5 | Goford Semiconductor | Description: MOSFET N-CH 40V 120A DFN5*6-8L Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 10A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 20 V | auf Bestellung 50000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT019N04D5 | Goford Semiconductor | Description: N40V,120A,RD<2.8M@10V,VTH1.0V~2. Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 10A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 20 V | auf Bestellung 4610 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT019N04D5 Produktcode: 200326
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Lieblingsprodukt
| Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| GT019N04D5 | Goford Semiconductor | Description: N40V,120A,RD<2.8M@10V,VTH1.0V~2. Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 10A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 20 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT02-110-019 | ICE Components | Pulse Transformers SMT Gate Driver Transformer 1:1 | auf Bestellung 1572 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT02-110-019 | ICE Components, Inc. | Description: SMT GATE DRIVE TRANSFORMER Packaging: Cut Tape (CT) Inductance: 785µH Size / Dimension: 0.340" L x 0.265" W (8.64mm x 6.73mm) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 130°C Transformer Type: Gate Drive Turns Ratio - Primary:Secondary: 1:1 ET (Volt-Time): 19.4VµS Height - Seated (Max): 0.118" (3.00mm) | auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT02-110-019 | ICE Components, Inc. | Description: SMT GATE DRIVE TRANSFORMER Packaging: Tape & Reel (TR) Inductance: 785µH Size / Dimension: 0.340" L x 0.265" W (8.64mm x 6.73mm) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 130°C Transformer Type: Gate Drive Turns Ratio - Primary:Secondary: 1:1 ET (Volt-Time): 19.4VµS Height - Seated (Max): 0.118" (3.00mm) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT0200-17M000 | NMB Technologies Corporation | Description: HYBRID 17 STEP MOTOR LOW BACKLAS Features: Flatted Shaft Packaging: Bulk Voltage - Rated: 24VDC Size / Dimension: Square - 1.654" x 1.654" (42.00mm x 42.00mm) Type: Hybrid Gear Motor Operating Temperature: -10°C ~ 50°C Termination Style: Wire Leads Step Angle: 0.09° Torque - Holding (oz-in / mNm): 212.44 / 1500 Coil Type: Unipolar Diameter - Shaft: 0.236" (6.00mm) Mounting Hole Spacing: 1.220" (31.00mm) Length - Shaft and Bearing: 0.787" (20.00mm) NEMA Frame Size: 17 Current Rating (Amps): 1 A Coil Resistance: 3.1 Ohms Steps per Revolution: 4000 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT0200-23M201 | NMB Technologies Corporation | Description: HYBRID 23 STEP MOTOR LOW BACKLAS Features: Flatted Shaft Packaging: Bulk Voltage - Rated: 24VDC Size / Dimension: Square - 2.362" x 2.362" (60.00mm x 60.00mm) Type: Hybrid Gear Motor Operating Temperature: -10°C ~ 50°C Termination Style: Wire Leads Step Angle: 0.09° Torque - Holding (oz-in / mNm): 495.75 / 3500 Coil Type: Unipolar Diameter - Shaft: 0.315" (8.00mm) Mounting Hole Spacing: 1.949" (49.50mm) Length - Shaft and Bearing: 1.260" (32.00mm) NEMA Frame Size: 24 Current Rating (Amps): 900 mA Coil Resistance: 5.8 Ohms Steps per Revolution: 4000.0 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT020N04M | Goford Semiconductor | Description: MOSFET,N-CH,40V,140A,85W,TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3235 pF @ 20 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT020N04M | Goford Semiconductor | Description: MOSFET,N-CH,40V,140A,85W,TO-263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3235 pF @ 20 V | auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT020N10M | Goford Semiconductor | Description: MOSFET,N-CH,100V,236A,270W,TO-26 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 236A (Tc) Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-263 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 50 V | auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT020N10M | Goford Semiconductor | Description: MOSFET,N-CH,100V,236A,270W,TO-26 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 236A (Tc) Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-263 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT020N10TL | Goford Semiconductor | Description: MOSFET N-CH 100V 300A 330W 2.0M( Packaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 50 V | auf Bestellung 1740 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT020N10TL | Goford Semiconductor | Description: MOSFET N-CH 100V 300A 330W 2.0M( Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT020N10TL | Goford Semiconductor | Description: MOSFET,N-CH,100V,300A,330W,TOLL- Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 330W Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 50 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT020Z-2 | POWER ONE | 07+ | auf Bestellung 1015 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT023N10M | Goford Semiconductor | Description: N100V,140A,RD<2.7M@10V,VTH2.7V~4 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 226A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8148 pF @ 50 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT023N10M | Goford Semiconductor | Description: N100V,140A,RD<2.7M@10V,VTH2.7V~4 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 226A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8148 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT023N10M | Goford Semiconductor | Description: MOSFET N-CH 100V 226A TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 226A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8050 pF @ 50 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT023N10Q | Goford Semiconductor | Description: MOSFET N-CH 100V 226A 250W TO-2 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 226A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8488 pF @ 50 V | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT023N10Q | GOFORD Semiconductor | Enhancement Mode Power MOSFET | auf Bestellung 9990 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT023N10Q | Goford Semiconductor | Description: MOSFET N-CH 100V 226A 250W TO-2 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 226A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8488 pF @ 50 V | auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT023N10T | Goford Semiconductor | Description: N100V, 140A,RD<2.7M@10V,VTH2.7V~ Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8086 pF @ 50 V | auf Bestellung 183 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT023N10T | Goford Semiconductor | Description: MOSFET N-CH 100V 226A 250W 2.7m( Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8086 pF @ 50 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT023N10TL | GOFORD Semiconductor | GT023N10TL | auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT023N10TL | Goford Semiconductor | Description: MOSFET N-CH 100V 330A TOLL-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 10V Power Dissipation (Max): 395W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8058 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT023N10TL | Goford Semiconductor | Description: MOSFET N-CH 100V 330A TOLL-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 10V Power Dissipation (Max): 395W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8058 pF @ 50 V | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT023N10TL | Goford Semiconductor | Description: MOSFET N-CH 100V 330A TOLL-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 10V Power Dissipation (Max): 395W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8058 pF @ 50 V | auf Bestellung 1738 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT025N06AD5 | Goford Semiconductor | Description: N60V, 170A, RD<2.2M@10V,VTH1.2V~ Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5044 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT025N06AD5 | Goford Semiconductor | Description: MOSFET N-CH 60V 170A DFN5*6-8L Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5044 pF @ 30 V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT025N06AD5 | GOFORD Semiconductor | N-CH,60V,170A,RD(max) Less Than 2mOhm at 10V,RD(max) Less Than 2.5mOhm at 4.5V,VTH 1.2V to 2.5V,DFN5x6-8L | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT025N06AD5 | Goford Semiconductor | Description: N60V, 170A, RD<2.2M@10V,VTH1.2V~ Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5044 pF @ 30 V | auf Bestellung 3117 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT025N06AK | Goford Semiconductor | Description: MOSFET,N-CH,60V,170A,215W,DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT025N06AK | Goford Semiconductor | Description: MOSFET,N-CH,60V,170A,215W,DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 30 V | auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT025N06AM | Goford Semiconductor | Description: N60V,170A,RD<2.5M@10V,VTH1.2V~2. Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5119 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT025N06AM | Goford Semiconductor | Description: MOSFET N-CH 60V 170A TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT025N06AM | GOFORD Semiconductor | N-CH,60V,170A,RD(max) Less Than 2.5mOhm at 10V,RD(max) Less Than 3.0mOhm at 4.5V,VTH 1.2V to 2.5V, TO-263 | auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT025N06AM | Goford Semiconductor | Description: N60V,170A,RD<2.5M@10V,VTH1.2V~2. Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5119 pF @ 30 V | auf Bestellung 776 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT025N06AM6 | Goford Semiconductor | Description: N60V,170A,RD<2.0M@10V,VTH1.2V~2. Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5058 pF @ 30 V | auf Bestellung 494 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT025N06AM6 | Goford Semiconductor | Description: N60V,170A,RD<2.0M@10V,VTH1.2V~2. Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5058 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT025N06AQ | Goford Semiconductor | Description: MOSFET,N-CH,60V,175A,220W,TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 175A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 220W Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 30 V | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT025N06AQ | Goford Semiconductor | Description: MOSFET N-CH 60V 175A 220W 2.5M(M Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 175A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 220W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT025N06AT | Goford Semiconductor | Description: MOSFET N-CH 60V 170A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT025N06AT | Goford Semiconductor | Description: N60V, 170A,RD<2.5M@10V,VTH1.2V~2 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4954 pF @ 30 V | auf Bestellung 86 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT025N06AT | GOFORD Semiconductor | N-CH,60V,170A,RD(max) Less Than 2.5mOhm at 10V,RD(max) Less Than 3.2mOhm at 4.5V,VTH 1.2V to 2.5V, TO-220 | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT025N06D5 | Goford Semiconductor | Description: N60V,RD(MAX)<2.7M@10V,RD(MAX)<3. Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5125 pF @ 30 V | auf Bestellung 6126 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT025N06D5 | Goford Semiconductor | Description: N60V,RD(MAX)<2.7M@10V,RD(MAX)<3. Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5125 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT025N06F | Goford Semiconductor | Description: MOSFET,N-CH,60V,120A,55W,TO-220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V | auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT025N06M | Goford Semiconductor | Description: MOSFET,N-CH,60V,170A,215W,TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT025N06M | Goford Semiconductor | Description: MOSFET,N-CH,60V,170A,215W,TO-263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V | auf Bestellung 180 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT025N06TL | Goford Semiconductor | Description: MOSFET N-CH 60V 200A 230W TOLL-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5020 pF @ 30 V | auf Bestellung 46 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT025N06TL | Goford Semiconductor | Description: MOSFET N-CH 60V 200A 230W TOLL-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5020 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT025N06TL | Goford Semiconductor | Description: MOSFET,N-CH,60V,200A,230W,TOLL-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 4.5V Power Dissipation (Max): 230W Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 10 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT03-111-034-B | ICE Components | Pulse Transformers SMT Gate Driver Transformer 1:1:1 | auf Bestellung 74 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT03-111-052-A | ICE Components | Pulse Transformers Gate Drive Transformer | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT03-111-069-B | ICE Components | Pulse Transformers SMT Gate Driver Transformer 1:1:1 | auf Bestellung 1662 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT03-111-110-A | ICE Components | Pulse Transformers SMT Gate Driver Transformer 1:1:1 | auf Bestellung 618 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT03-122-055-A | ICE Components | Pulse Transformers SMT Gate Driver Xfmr 1:2.5:2.5 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT0300-17M000 | NMB Technologies Corporation | Description: HYBRID 17 STEP MOTOR LOW BACKLAS Features: Flatted Shaft Packaging: Bulk Voltage - Rated: 24VDC Size / Dimension: Square - 1.654" x 1.654" (42.00mm x 42.00mm) Type: Hybrid Gear Motor Operating Temperature: -10°C ~ 50°C Termination Style: Wire Leads Step Angle: 0.06° Torque - Holding (oz-in / mNm): 212.44 / 1500 Coil Type: Unipolar Diameter - Shaft: 0.236" (6.00mm) Mounting Hole Spacing: 1.220" (31.00mm) Length - Shaft and Bearing: 0.787" (20.00mm) NEMA Frame Size: 17 Current Rating (Amps): 1 A Coil Resistance: 3.1 Ohms Steps per Revolution: 6000.0 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT0300-23M201 | NMB Technologies Corporation | Description: HYBRID 23 STEP MOTOR LOW BACKLAS Features: Flatted Shaft Packaging: Bulk Voltage - Rated: 24VDC Size / Dimension: Square - 2.362" x 2.362" (60.00mm x 60.00mm) Type: Hybrid Gear Motor Operating Temperature: -10°C ~ 50°C Termination Style: Wire Leads Step Angle: 0.06° Torque - Holding (oz-in / mNm): 566.57 / 4000 Coil Type: Unipolar Diameter - Shaft: 0.315" (8.00mm) Mounting Hole Spacing: 1.949" (49.50mm) Length - Shaft and Bearing: 1.260" (32.00mm) NEMA Frame Size: 24 Current Rating (Amps): 900 mA Coil Resistance: 5.8 Ohms Steps per Revolution: 6000.0 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT030N08T | Goford Semiconductor | Description: N85V,200A,RD<3.0M@10V,VTH2.0V~4. Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Power Dissipation (Max): 260W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 85 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5822 pF @ 50 V | auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT030PCM32-ARP-120 | Amphenol Industrial | Circular MIL Spec Connector 4 CONDUCTOR RECPT 120 AMPS 4 AWG | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT030PCM32-ARP-80 | Amphenol Industrial Operations | Description: CONN RCPT MALE 4POS SILVER SCREW | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT030PCM32-ARP-80 | Amphenol Industrial | Circular MIL Spec Connector 4 CONDUCTOR RECPT 80 AMPS 4-6 AWG | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT0312-90 | Ondrives.US Corp | Description: SHAFT, 0.0312 DIA. X 9IN LG Packaging: Bulk Type: Shaft, Ground Specifications: 0.031" Dia x 9.000" L (0.78mm x 228.60mm) Part Status: Active | auf Bestellung 83 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT035N06T | Goford Semiconductor | Description: N-CH, 60V,170A, RD(MAX)<3.5M@10V Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5064 pF @ 30 V | auf Bestellung 96 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT035N10M | Goford Semiconductor | Description: N100V, 190A,RD<3.5M@10V,VTH2V~4V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 277W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6188 pF @ 50 V | auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT035N10M | Goford Semiconductor | Description: N100V, 190A,RD<3.5M@10V,VTH2V~4V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 277W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6188 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT035N10Q | Goford Semiconductor | Description: MOSFET N-CH 100V 190A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V Power Dissipation (Max): 277W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6516 pF @ 50 V | auf Bestellung 17 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT035N10T | Goford Semiconductor | Description: N100V,190A,RD<3.5M@10V,VTH2.0V~4 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6057 pF @ 50 V | auf Bestellung 56 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT035N12T | Goford Semiconductor | Description: MOSFET N-CH 120V 180A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 50A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8336 pF @ 60 V | auf Bestellung 40 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT038P06M | Goford Semiconductor | Description: MOSFET P-CH 60V 200A 350W TO-26 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 50A, 10V Power Dissipation (Max): 350W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 386 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11988 pF @ 30 V | auf Bestellung 599 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT038P06M | Goford Semiconductor | Description: MOSFET P-CH 60V 200A 350W TO-26 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 50A, 10V Power Dissipation (Max): 350W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 386 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11988 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT04-111-063-A | ICE Components, Inc. | Description: THT GATE DRIVE TRANSFORMER Packaging: Tray Inductance: 247µH Size / Dimension: 0.810" L x 0.480" W (20.57mm x 12.19mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 155°C Transformer Type: Gate Drive Turns Ratio - Primary:Secondary: 1:1:1 ET (Volt-Time): 63VµS Height - Seated (Max): 0.750" (19.05mm) | auf Bestellung 307 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT04-111-063-B | ICE Components | Pulse Transformers Gate Drive Transformer | auf Bestellung 8515 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT04-111-126-A | ICE Components | Pulse Transformers Gate Drive Transformer | auf Bestellung 1811 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT04-111-126-A | ICE Components, Inc. | Description: THT GATE DRIVE TRANSFORMER Packaging: Tray Inductance: 990µH Size / Dimension: 0.810" L x 0.480" W (20.57mm x 12.19mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 155°C Transformer Type: Gate Drive Turns Ratio - Primary:Secondary: 1:1:1 ET (Volt-Time): 126VµS Height - Seated (Max): 0.750" (19.05mm) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT04-111-126-B | ICE Components | Pulse Transformers Gate Drive Transformer | auf Bestellung 987 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT04-111-189-A | ICE Components | Pulse Transformers Gate Drive Transformer | auf Bestellung 466 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT04-111-252-A | ICE Components, Inc. | Description: THT GATE DRIVE TRANSFORMER Packaging: Tray Inductance: 3.96mH Size / Dimension: 0.810" L x 0.480" W (20.57mm x 12.19mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 155°C Transformer Type: Gate Drive Turns Ratio - Primary:Secondary: 1:1:1 ET (Volt-Time): 252VµS Height - Seated (Max): 0.750" (19.05mm) | auf Bestellung 498 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT04-111-252-A | ICE Components | Pulse Transformers Gate Drive Transformer | auf Bestellung 191 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT04-111-252-B | ICE Components | Pulse Transformers Gate Drive Transformer | auf Bestellung 769 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT04-111-315-A | ICE Components | Pulse Transformers Gate Drive Transformer | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT04-111-315-B | ICE Components | Pulse Transformers Gate Drive Transformer | auf Bestellung 781 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT04-111-378-A | ICE Components | Pulse Transformers Gate Drive Transformer | auf Bestellung 559 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT04-111-378-A | ICE Components, Inc. | Description: THT GATE DRIVE TRANSFORMER Packaging: Tray Inductance: 8.91mH Size / Dimension: 0.810" L x 0.480" W (20.57mm x 12.19mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 155°C Transformer Type: Gate Drive ET (Volt-Time): 378VµS Height - Seated (Max): 0.750" (19.05mm) Turns Ratio - Primary:Secondary: 1:1:1 | auf Bestellung 491 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT04-111-378-B | ICE Components | Pulse Transformers Gate Drive Transformer | auf Bestellung 451 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT04-122-252-A | ICE Components | Pulse Transformers Gate Drive Transformer | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT04-122-378-A | ICE Components | Pulse Transformers Gate Drive Transformer | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT040N04D5I | Goford Semiconductor | Description: N40V,110A,RD<3.5M@10V,VTH1.0V~2. Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2298 pF @ 20 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT040N04M | Goford Semiconductor | Description: MOSFET,N-CH,40V,120A,82W,TO-263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 20 V | auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT040N04M | Goford Semiconductor | Description: MOSFET,N-CH,40V,120A,82W,TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 20 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT040N04T | Goford Semiconductor | Description: MOSFET,N-CH,40V,110A,87W,TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V Power Dissipation (Max): 87W Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT040N04T | Goford Semiconductor | Description: MOSFET N-CH 40V 120A 96W 4M(MAX) Packaging: Tube Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2794 pF @ 20 V | auf Bestellung 38 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT040N04TI | Goford Semiconductor | Description: N40V, 110A,RD<4M@10V,VTH1.0V~2.5 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2303 pF @ 20 V | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT040N10M | Goford Semiconductor | Description: MOSFET,N-CH,100V,140A,200W,TO-26 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V Power Dissipation (Max): 200W Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT040N10M | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 140A; 200W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Power dissipation: 200W Case: TO263 Gate-source voltage: ±20V Mounting: SMD Gate charge: 0.1µC Kind of channel: enhancement Technology: SGT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT040N10M | Goford Semiconductor | Description: MOSFET N-CH 100V 140A 200W TO-26 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 40A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5920 pF @ 50 V | auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT040N10M | Goford Semiconductor | Description: MOSFET N-CH 100V 140A 200W TO-26 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 40A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5920 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT040N10T | Goford Semiconductor | Description: MOSFET N-CH 100V 140A 200W 4.5m Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5920 pF @ 50 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT040N10T | GOFORD SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 140A; 200W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Power dissipation: 200W Case: TO220 Gate-source voltage: ±20V Mounting: THT Gate charge: 0.1µC Kind of channel: enhancement Technology: SGT Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT0410EM | FAIRCHIL.. | 09+ SOP14 | auf Bestellung 1758 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT0416A | Marathon Motors | Description: MOTOR 7.5HP 1750RPM 213JM DPPE 3 | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT042P06T | GOFORD Semiconductor | P-Channel Enhancement Mode Power MOSFET | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT042P06T | Goford Semiconductor | Description: MOSFET P-CH 60V 160A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V FET Feature: Standard Power Dissipation (Max): 280W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT042P06T | GOFORD Semiconductor | P-Channel Enhancement Mode Power MOSFET | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT042P06T | Goford Semiconductor | Description: MOSFET, P-CH,-60V,-160A,RD(MAX)< Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V FET Feature: Standard Power Dissipation (Max): 280W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9151 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT043N15F | Goford Semiconductor | Description: MOSFET 150V 95A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 90A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V | auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT043N15M | Goford Semiconductor | Description: MOSFET,N-CH,150V,143A,275W,TO-26 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 143A (Tc) Power Dissipation (Max): 275W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 75 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT043N15M | Goford Semiconductor | Description: MOSFET,N-CH,150V,143A,275W,TO-26 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 143A (Tc) Power Dissipation (Max): 275W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 75 V | auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT043N15Q | Goford Semiconductor | Description: MOSFET 150V 180A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 90A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V | auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT043N15T | Goford Semiconductor | Description: MOSFET 150V 143A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 143A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 90A, 10V Power Dissipation (Max): 275W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V | auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT043N15TL | Goford Semiconductor | Description: MOSFET,N-CH,150V,202A,350W,TOLL- Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 202A (Tc) Power Dissipation (Max): 350W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TOLL-8L Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 75 V | auf Bestellung 185 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT043N15TL | Goford Semiconductor | Description: MOSFET,N-CH,150V,202A,350W,TOLL- Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 202A (Tc) Power Dissipation (Max): 350W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TOLL-8L Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 75 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT045N10D5 | Goford Semiconductor | Description: MOSFET N-CH 100V 120A DFN5*6-8L Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4217 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT045N10D5 | Goford Semiconductor | Description: MOSFET N-CH 100V 120A 180W 5.0m Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4217 pF @ 50 V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT045N10D5 | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 120A; 180W; DFN5x6 Type of transistor: N-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 180W Case: DFN5x6 Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement Gate charge: 78nC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT045N10D5 | Goford Semiconductor | Description: MOSFET N-CH 100V 120A DFN5*6-8L Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4217 pF @ 50 V | auf Bestellung 4477 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT045N10M | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 120A; 180W; TO263 Type of transistor: N-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 180W Case: TO263 Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement Gate charge: 81nC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT045N10M | Goford Semiconductor | Description: N100V, 120A,RD<4.5M@10V,VTH2V~4V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4198 pF @ 50 V | auf Bestellung 268 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT045N10M | Goford Semiconductor | Description: N100V, 120A,RD<4.5M@10V,VTH2V~4V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4198 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT045N10Q | Goford Semiconductor | Description: MOSFET,N-CH,100V,145A,208W,TO-24 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 145A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V Power Dissipation (Max): 208W Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 50 V | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT045N10Q | Goford Semiconductor | Description: MOSFET N-CH 100V 145A 208W TO-24 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 145A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 50 V | auf Bestellung 49 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT045N10Q | GOFORD SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 145A; 208W; TO247 Type of transistor: N-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: 100V Drain current: 145A Power dissipation: 208W Case: TO247 Gate-source voltage: ±20V Mounting: THT Kind of channel: enhancement Gate charge: 78nC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT045N10T | Goford Semiconductor | Description: N100V, 150A,RD<4.8M@10V,VTH2V~4V Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4198 pF @ 50 V | auf Bestellung 40 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT045N10T | GOFORD SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 120A; 180W; TO220 Type of transistor: N-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 180W Case: TO220 Gate-source voltage: ±20V Mounting: THT Kind of channel: enhancement Gate charge: 78nC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT045N10T | Goford Semiconductor | Description: MOSFET N-CH 100V 120A 180W 4.5m( Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6094 pF @ 50 V | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT0468-60 | Ondrives.US Corp | Description: SHAFT, 0.0468 DIA. X 6IN LG Packaging: Bulk Type: Shaft, Ground Specifications: 0.046" Dia x 6.000" L (1.18mm x 152.40mm) Part Status: Active | auf Bestellung 44 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT048N10T | Goford Semiconductor | Description: MOSFET N-CH 100V 110A 150W 4.8M Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 50 V | auf Bestellung 49 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT05-14S | Amphenol Industrial | Circular MIL Spec Tools, Hardware & Accessories Dummy Rcpt 14S Shell Rvs Bay Cpling Conn | auf Bestellung 44 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT05-20(025) | Amphenol Industrial | Circular MIL Spec Tools, Hardware & Accessories Dummy Receptacle | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT05-20(025) | Amphenol Industrial Operations | Description: DUMMYRECEPT Packaging: Bulk | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT055N06D5 | Goford Semiconductor | Description: MOSFET N-CH 60V 90A 78W DFN5*6-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT055N06D5 | Goford Semiconductor | Description: MOSFET N-CH 60V 90A 78W DFN5*6-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 30 V | auf Bestellung 86 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT055N06K | Goford Semiconductor | Description: MOSFET N-CH 60V 90A 78W TO-252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT055N06K | Goford Semiconductor | Description: MOSFET,N-CH,60V,90A,78W,TO-252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 4.5V Power Dissipation (Max): 78W Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 10 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT055N06K | Goford Semiconductor | Description: MOSFET N-CH 60V 90A 78W TO-252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 30 V | auf Bestellung 484 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT055N06K | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 60V; 90A; 78W; TO252 Type of transistor: N-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Power dissipation: 78W Case: TO252 Gate-source voltage: ±20V Mounting: SMD Gate charge: 30nC Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT055N06M | Goford Semiconductor | Description: MOSFET N-CH 60V 90A 78W TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT055N06M | Goford Semiconductor | Description: MOSFET,N-CH,60V,90A,78W,TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 8A, 10V Power Dissipation (Max): 78W Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT055N06M | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 60V; 90A; 78W; TO263 Type of transistor: N-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Power dissipation: 78W Case: TO263 Gate-source voltage: ±20V Mounting: SMD Gate charge: 30nC Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT055N06M | Goford Semiconductor | Description: MOSFET N-CH 60V 90A 78W TO-263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 30 V | auf Bestellung 90 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT055N06T | Goford Semiconductor | Description: MOSFET N-CH 60V 90A 78W TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 30 V | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT055N06T | GOFORD SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 60V; 90A; 78W; TO220 Type of transistor: N-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Power dissipation: 78W Case: TO220 Gate-source voltage: ±20V Mounting: THT Gate charge: 30nC Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT055N06T | Goford Semiconductor | Description: MOSFET,N-CH,60V,90A,78W,TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Power Dissipation (Max): 78W Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 30 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT05A | IDT | QFP | auf Bestellung 3325 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT06-111-049 | ICE Components | Pulse Transformers Gate Drive Transformer | auf Bestellung 7862 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT06-111-049 | ICE Components, Inc. | Description: SMT GATE DRIVE TRANSFORMER Packaging: Tape & Reel (TR) Inductance: 880µH Size / Dimension: 0.430" L x 0.630" W (11.00mm x 16.00mm) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 130°C Transformer Type: Gate Drive Turns Ratio - Primary:Secondary: 1:1:1 ET (Volt-Time): 49Vµs Height - Seated (Max): 0.295" (7.50mm) Grade: Automotive Qualification: AEC-Q200 | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT06-111-049 | ICE Components, Inc. | Description: SMT GATE DRIVE TRANSFORMER Packaging: Cut Tape (CT) Inductance: 880µH Size / Dimension: 0.430" L x 0.630" W (11.00mm x 16.00mm) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 130°C Transformer Type: Gate Drive Turns Ratio - Primary:Secondary: 1:1:1 ET (Volt-Time): 49Vµs Height - Seated (Max): 0.295" (7.50mm) Grade: Automotive Qualification: AEC-Q200 | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT06-111-100 | ICE Components, Inc. | Description: SMT GATE DRIVE TRANSFORMER Packaging: Cut Tape (CT) Inductance: 2mH Size / Dimension: 0.430" L x 0.630" W (11.00mm x 16.00mm) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 130°C Transformer Type: Gate Drive Turns Ratio - Primary:Secondary: 1:1:1 ET (Volt-Time): 100VµS Height - Seated (Max): 0.295" (7.50mm) Grade: Automotive Qualification: AEC-Q200 | auf Bestellung 185 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT06-111-100 | ICE Components, Inc. | Description: SMT GATE DRIVE TRANSFORMER Packaging: Tape & Reel (TR) Inductance: 2mH Size / Dimension: 0.430" L x 0.630" W (11.00mm x 16.00mm) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 130°C Transformer Type: Gate Drive Turns Ratio - Primary:Secondary: 1:1:1 ET (Volt-Time): 100VµS Height - Seated (Max): 0.295" (7.50mm) Grade: Automotive Qualification: AEC-Q200 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT06-111-100 | ICE Components | Pulse Transformers Gate Drive Transformer | auf Bestellung 17587 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT06-122-053 | ICE Components | Pulse Transformers Gate Drive Transformer | auf Bestellung 1045 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT060N04D3 | Goford Semiconductor | Description: N40V,RD(MAX)<6.5M@10V,RD(MAX)<10 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 20 V | auf Bestellung 8325 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT060N04D3 | Goford Semiconductor | Description: N40V,RD(MAX)<6.5M@10V,RD(MAX)<10 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 20 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT060N04D3 | GOFORD Semiconductor | Trans MOSFET N-CH 40V 40A 8-Pin DFN EP | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT060N04D3 | Goford Semiconductor | Description: MOSFET N-CH 40V 40A DFN3*3-8L Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V Power Dissipation (Max): 24W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT060N04D5 | Goford Semiconductor | Description: N40V,120A,RD<2.8M@10V,VTH1.0V~2. Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1276 pF @ 20 V | auf Bestellung 4820 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT060N04D5 | GOFORD Semiconductor | N-CH,40V,62A,RD(max) Less Than 6.5mOhm at 10V,RD(max) Less Than 8.5mOhm at 4.5V,VTH 1.0V to 2.3V, DFN5x6-8L | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT060N04D5 | Goford Semiconductor | Description: N40V,120A,RD<2.8M@10V,VTH1.0V~2. Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1276 pF @ 20 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT060N04D52 | Goford Semiconductor | Description: MOSFET 2N-CH 40V 62A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 20W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1276pF @ 20V Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT060N04D52 | Goford Semiconductor | Description: MOSFET 2N-CH 40V 62A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 20W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1276pF @ 20V Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT060N04K | Goford Semiconductor | Description: MOSFET, N-CH, 40V,54A,TO-252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 20 V | auf Bestellung 2166 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT060N04K | Goford Semiconductor | Description: MOSFET, N-CH, 40V,54A,TO-252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 20 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT060N04K | Goford Semiconductor | Description: MOSFET N-CH 40V 62A 70W TO-252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1279 pF @ 20 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT060N04T | Goford Semiconductor | Description: MOSFET, N-CH, 40V,60A,TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 20 V | auf Bestellung 106 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT060N04T | GOFORD Semiconductor | N-CH,40V,60A,RD(max) Less Than 6mOhm at 10V,RD(max) Less Than 8.5mOhm at 4.5V,VTH 1.0V to 2.3V, TO-220 | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT060N10T | Goford Semiconductor | Description: MOSFET N-CH 100V 116A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5365 pF @ 50 V | auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT060N10T | GOFORD Semiconductor | GT060N10T | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT060N10T | GOFORD SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 116A; 160W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 116A Power dissipation: 160W Case: TO220 Gate-source voltage: ±20V Mounting: THT Gate charge: 83nC Kind of channel: enhancement Technology: SGT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT060N10T | Goford Semiconductor | Description: MOSFET N-CH 100V 116A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5365 pF @ 50 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT0625-180 | Ondrives.US Corp | Description: SHAFT, 0.0625 DIA. X 18IN LG | auf Bestellung 24 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT0625-240 | Ondrives.US Corp | Description: SHAFT, 0.0625 DIA. X 24IN LG | auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT0625-30 | Ondrives.US Corp | Description: SHAFT, 0.0625 DIA. X 3IN LG | auf Bestellung 33 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT0625-360 | Ondrives.US Corp | Description: SHAFT, 0.0625 DIA. X 36IN LG | auf Bestellung 56 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT0625-50 | Ondrives.US Corp | Description: SHAFT, 0.0625 DIA. X 5IN LG | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT0625-90 | Ondrives.US Corp | Description: SHAFT, 0.0625 DIA. X 9IN LG | auf Bestellung 74 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT065P06D5 | Goford Semiconductor | Description: MOSFET P-CH 60V 103A DFN5*6-8L Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 103A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ -20A, -10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5326 pF @ -30 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT065P06D5 | Goford Semiconductor | Description: MOSFET P-CH 60V 103A DFN5*6-8L Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 103A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5326 pF @ 30 V | auf Bestellung 3146 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT065P06D5 | Goford Semiconductor | Description: MOSFET P-CH 60V 103A DFN5*6-8L Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 103A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5326 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT065P06T | GOFORD Semiconductor | P-CH,-60V,-82A,RD(max) Less Than 7.5mOhm at -10V,RD(max) Less Than 9.5mOhm at -4.5V,VTH-1V to -2.5V ,TO-220 | auf Bestellung 16450 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT065P06T | Goford Semiconductor | Description: MOSFET P-CH 60V 82A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V | auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT065P06T | Goford Semiconductor | Description: P-60V,-82A,RD(MAX)<7.5M@-10V,VTH Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5335 pF @ 30 V | auf Bestellung 27 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT06PCM32-ARS-120(36OS) | Amphenol Industrial | Circular MIL Spec Connector 4 CONDUCTOR PLUG 120 AMPS 4 AWG | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT06PCM32-ARS-30(29R) | Amphenol Industrial | Circular MIL Spec Connector 4 CONDUCTOR PLUG 30 AMPS 8-10 AWG | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT06PCM32-ARS-30(29R) | Amphenol Industrial Operations | Description: CONN PLUG FMALE 4P SILVER SCREW Packaging: Bulk Features: Backshell Connector Type: Plug, Female Sockets Color: Olive Drab Current Rating (Amps): 30A Mounting Type: Free Hanging (In-Line) Number of Positions: 4 Orientation: N (Normal) Shell Size - Insert: 32 Operating Temperature: -55°C ~ 125°C Fastening Type: Reverse Bayonet Lock Termination: Screw Ingress Protection: IP67 - Dust Tight, Waterproof Contact Finish - Mating: Silver Part Status: Discontinued at Digi-Key Shell Material: Aluminum Shell Finish: Olive Drab Cadmium Primary Material: Metal | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT06PCM32-ARS-40(29R) | Amphenol Industrial | Circular MIL Spec Connector 4 CONDUCTOR PLUG 40 AMPS 8-10 AWG | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT06PCM32-ARS-40(29R) | Amphenol Industrial Operations | Description: CONN PLUG FMALE 4P SILVER SCREW Packaging: Bulk Features: Backshell Connector Type: Plug, Female Sockets Color: Olive Drab Current Rating (Amps): 40A Mounting Type: Free Hanging (In-Line) Number of Positions: 4 Orientation: N (Normal) Shell Size - Insert: 32 Operating Temperature: -55°C ~ 125°C Fastening Type: Reverse Bayonet Lock Termination: Screw Ingress Protection: IP67 - Dust Tight, Waterproof Contact Finish - Mating: Silver Shell Material: Aluminum Shell Finish: Olive Drab Cadmium Primary Material: Metal | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT06PCM32-ARS-50(29) | Amphenol Industrial Operations | Description: CONN PLUG FMALE 4P SILVER SCREW Packaging: Bulk Features: Backshell Connector Type: Plug, Female Sockets Color: Olive Drab Current Rating (Amps): 50A Mounting Type: Free Hanging (In-Line) Number of Positions: 4 Orientation: N (Normal) Shell Size - Insert: 32 Operating Temperature: -55°C ~ 125°C Fastening Type: Reverse Bayonet Lock Termination: Screw Ingress Protection: IP67 - Dust Tight, Waterproof Contact Finish - Mating: Silver Shell Material: Aluminum Shell Finish: Olive Drab Cadmium Primary Material: Metal | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT06PCM32-ARS-50(29) | Amphenol Industrial | Circular MIL Spec Connector 4 CONDUCTOR PLUG 50 AMPS 4-6 AWG | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT06PCM32-ARS-70(29OS) | Amphenol Industrial | Circular MIL Spec Connector 4 CONDUCTOR PLUG 70 AMPS 4-6 AWG | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT06PCM32-ARS-70(29OS) | Amphenol Industrial Operations | Description: CONN PLUG FMALE 4P SILVER SCREW Packaging: Bulk Features: Backshell Connector Type: Plug, Female Sockets Color: Olive Drab Current Rating (Amps): 70A Mounting Type: Free Hanging (In-Line) Number of Positions: 4 Orientation: N (Normal) Shell Size - Insert: 32 Operating Temperature: -55°C ~ 125°C Fastening Type: Reverse Bayonet Lock Termination: Screw Ingress Protection: IP67 - Dust Tight, Waterproof Contact Finish - Mating: Silver Shell Material: Aluminum Shell Finish: Olive Drab Cadmium Primary Material: Metal | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT07-110-013 | ICE Components, Inc. | Description: SMT GATE DRIVE TRANSFORMER Packaging: Tape & Reel (TR) Inductance: 100µH Size / Dimension: 0.390" L x 0.480" W (10.00mm x 12.20mm) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Transformer Type: Gate Drive Turns Ratio - Primary:Secondary: 1:1 ET (Volt-Time): 13VµS Height - Seated (Max): 0.250" (6.35mm) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT07-110-013 | ICE Components, Inc. | Description: SMT GATE DRIVE TRANSFORMER Packaging: Cut Tape (CT) Inductance: 100µH Size / Dimension: 0.390" L x 0.480" W (10.00mm x 12.20mm) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Transformer Type: Gate Drive Turns Ratio - Primary:Secondary: 1:1 ET (Volt-Time): 13VµS Height - Seated (Max): 0.250" (6.35mm) | auf Bestellung 496 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT07-110-013 | ICE Components | Pulse Transformers SMT Gate Drive Trans 100uH 1:1 6250Vac | auf Bestellung 931 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT07-110-027 | ICE Components, Inc. | Description: SMT GATE DRIVE TRANSFORMER Packaging: Cut Tape (CT) Inductance: 340µH Size / Dimension: 0.390" L x 0.480" W (10.00mm x 12.20mm) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Transformer Type: Gate Drive Turns Ratio - Primary:Secondary: 1:1.1 ET (Volt-Time): 27VµS Height - Seated (Max): 0.250" (6.35mm) | auf Bestellung 278 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT07-110-027 | ICE Components, Inc. | Description: SMT GATE DRIVE TRANSFORMER Packaging: Tape & Reel (TR) Inductance: 340µH Size / Dimension: 0.390" L x 0.480" W (10.00mm x 12.20mm) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Transformer Type: Gate Drive Turns Ratio - Primary:Secondary: 1:1.1 ET (Volt-Time): 27VµS Height - Seated (Max): 0.250" (6.35mm) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT07-110-027 | ICE Components | Pulse Transformers SMT Gate Drive Trans 340uH 1:1.1 6250Vac | auf Bestellung 1121 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT070N15M | Goford Semiconductor | Description: MOSFET N-CH 150V 140A 320W TO-26 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V Power Dissipation (Max): 320W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 75 V | auf Bestellung 795 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT070N15M | Goford Semiconductor | Description: MOSFET N-CH 150V 140A 320W TO-26 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V Power Dissipation (Max): 320W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 75 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT070N15M | Goford Semiconductor | Description: MOSFET N-CH 150V 140A 320W 5.8m( Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V Power Dissipation (Max): 320W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 75 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT070N15T | Goford Semiconductor | Description: MOSFET N-CH 150V140A 320W TO-22 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V Power Dissipation (Max): 320W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5864 pF @ 75 V | auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT070N15TL | Goford Semiconductor | Description: MOSFET,N-CH,150V,200A,430W,TOLL- Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V Power Dissipation (Max): 430W Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT070N15TL | Goford Semiconductor | Description: MOSFET N-CH 150V,200A,430W TOLL- Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V Power Dissipation (Max): 430W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5865 pF @ 75 V | auf Bestellung 75 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT070N15TL | Goford Semiconductor | Description: MOSFET N-CH 150V,200A,430W TOLL- Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V Power Dissipation (Max): 430W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5865 pF @ 75 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT0781-50 | Ondrives.US Corp | Description: SHAFT, 0.0781 DIA. X 5IN LG | auf Bestellung 27 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT0800PA01120HR | Amphenol Commercial Products | Power to the Board Topflight power 12P12S cable side power TPA | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT080N08D5 | Goford Semiconductor | Description: N85V,65A,RD<8.5M@10V,VTH2.0V~4.0 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 85 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1885 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT080N10K | Goford Semiconductor | Description: MOSFET N-CH 100V 65A TO-252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT080N10K | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 70A; 100W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 70A Power dissipation: 100W Case: TO252 Gate-source voltage: ±20V Mounting: SMD Gate charge: 50nC Kind of channel: enhancement Technology: SGT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT080N10K | Goford Semiconductor | Description: N100V, 75A,RD<8M@10V,VTH1V~3V, T Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 50 V | auf Bestellung 1437 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT080N10K | Goford Semiconductor | Description: N100V, 75A,RD<8M@10V,VTH1V~3V, T Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT080N10KI | Goford Semiconductor | Description: N100V,65A,RD<8M@10V,VTH1.0V~2.5V Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2394 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT080N10M | Goford Semiconductor | Description: N100V, 70A,RD<7.5M@10V,VTH1V~3V, Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2915 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT080N10M | Goford Semiconductor | Description: MOSFET N-CH 100V 70A TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V | auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT080N10M | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 70A; 100W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 70A Power dissipation: 100W Case: TO263 Gate-source voltage: ±20V Mounting: SMD Gate charge: 50nC Kind of channel: enhancement Technology: SGT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT080N10M | Goford Semiconductor | Description: N100V, 70A,RD<7.5M@10V,VTH1V~3V, Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2915 pF @ 50 V | auf Bestellung 239 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT080N10T | Goford Semiconductor | Description: N100V, 70A,RD<8M@10V,VTH1.0V~3.0 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 50 V | auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT080N10T | GOFORD SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 70A; 100W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 70A Power dissipation: 100W Case: TO220 Gate-source voltage: ±20V Mounting: THT Gate charge: 50nC Kind of channel: enhancement Technology: SGT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT080N10T | Goford Semiconductor | Description: MOSFET N-CH 100V 70A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT080N10TI | Goford Semiconductor | Description: N100V,65A,RD<8M@10V,VTH1.0V~2.5V Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2328 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT085N10D5 | Goford Semiconductor | Description: MOSFET N-CH 100V 71A 100W DFN5*6 Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 71A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 50 V | auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT085N10D5 | Goford Semiconductor | Description: MOSFET N-CH 100V 71A 100W DFN5*6 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 71A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT085N10D5 | Goford Semiconductor | Description: MOSFET,N-CH,100V,71A,100W,DFN5*6 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 71A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 4.5V Power Dissipation (Max): 100W Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 10 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT08885 | PRO ELEC | Description: PRO ELEC - GT08885 - Heizgerät rohrförmig 1ft, 45W tariffCode: 85162999 productTraceability: No rohsCompliant: YES Nennleistung: 45W euEccn: NLR Netzsteckertyp: Netzstecker separat erhältlich hazardous: false Betriebsspannung: 240V rohsPhthalatesCompliant: TBA Außentiefe: - Außenhöhe: - usEccn: EAR99 Außenbreite: 1ft SVHC: No SVHC (16-Jan-2020) | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT08886 | PRO ELEC | Description: PRO ELEC - GT08886 - Heizgerät rohrförmig 2ft, 80W tariffCode: 85162999 productTraceability: No rohsCompliant: YES Nennleistung: 80W euEccn: NLR Netzsteckertyp: Netzstecker separat erhältlich hazardous: false Betriebsspannung: 240V rohsPhthalatesCompliant: TBA Außentiefe: - Außenhöhe: - usEccn: EAR99 Außenbreite: 2ft SVHC: No SVHC (16-Jan-2020) | auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT08887/GT08609 | PRO ELEC | Description: PRO ELEC - GT08887/GT08609 - Heizgerät rohrförmig 3ft, 135W tariffCode: 85162999 productTraceability: No rohsCompliant: YES Nennleistung: 135W euEccn: NLR Netzsteckertyp: Netzstecker separat erhältlich hazardous: false Betriebsspannung: 240V rohsPhthalatesCompliant: TBA Außentiefe: - Außenhöhe: - usEccn: EAR99 Außenbreite: 3ft SVHC: No SVHC (16-Jan-2020) | auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT08892 | PRO ELEC | Description: PRO ELEC - GT08892 - Schutz für Heizung 2ft tariffCode: 85162999 productTraceability: No rohsCompliant: YES HLK-Typ: - euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (16-Jan-2020) | auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT088N06T | Goford Semiconductor | Description: MOSFET N-CH 60V 60A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT088N06T | Goford Semiconductor | Description: N60V,RD(MAX)<9M@10V,RD(MAX)<13M@ Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1116 pF @ 30 V | auf Bestellung 49 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT090N06D52 | GOFORD Semiconductor | Dual N-Channel Enhancement Mode Power MOSFET | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT090N06D52 | Goford Semiconductor | Description: MOSFET 2N-CH 60V 40A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 62W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1011pF @ 30V Rds On (Max) @ Id, Vgs: 14mOhm @ 14A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT090N06D5H | Goford Semiconductor | Description: MOSFET N-CH 60V 45A 69W DFN5*6-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 15A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 30 V | auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT090N06D5H | Goford Semiconductor | Description: MOSFET N-CH 60V 45A 69W DFN5*6-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 15A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT090N06K | Goford Semiconductor | Description: MOSFET, N-CH, 60V,45A,TO-252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 30 V | auf Bestellung 1573 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT090N06K | Goford Semiconductor | Description: MOSFET, N-CH, 60V,45A,TO-252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT090N06K | Goford Semiconductor | Description: MOSFET N-CH 60V 45A TO-252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 30 V | auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT090N06MH | Goford Semiconductor | Description: MOSFET N-CH 60V 45A 52W 11m(max Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 30 V | auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT090N06S | Goford Semiconductor | Description: N60V,14A,RD<8M@10V,VTH1.0V~2.4V, Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V Power Dissipation (Max): 3.1W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1378 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT095N04D3 | Goford Semiconductor | Description: MOSFET N-CH 40V 47A DFN3*3-8L Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 3A, 10V Power Dissipation (Max): 22.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 947 pF @ 20 V | auf Bestellung 4039 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT095N04D3 | Goford Semiconductor | Description: MOSFET N-CH 40V 47A DFN3*3-8L Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 3A, 10V Power Dissipation (Max): 22.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 947 pF @ 20 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT095N04D3 | Goford Semiconductor | Description: MOSFET N-CH 40V 47A DFN3*3-8L Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 3A, 10V Power Dissipation (Max): 22.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 947 pF @ 20 V | auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT095N04D5 | Goford Semiconductor | Description: MOSFET N-CH 40V 54A DFN5*6-8L Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V Power Dissipation (Max): 29.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 942 pF @ 20 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT095N04D5 | Goford Semiconductor | Description: MOSFET N-CH 40V 54A DFN5*6-8L Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V Power Dissipation (Max): 29.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 942 pF @ 20 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT095N10D5 | Goford Semiconductor | Description: N100V,RD(MAX)<11M@10V,RD(MAX)<15 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 50 V | auf Bestellung 4841 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT095N10D5 | GOFORD Semiconductor | N-Channel Enhancement Mode Power MOSFET | auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT095N10D5 | Goford Semiconductor | Description: N100V,RD(MAX)<11M@10V,RD(MAX)<15 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 50 V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT095N10D5 | Goford Semiconductor | Description: MOSFET N-CH 100V 55A DFN5*6-8L Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 35A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V | auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT095N10K | Goford Semiconductor | Description: N100V, RD(MAX)<10.5M@10V,RD(MAX) Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1667 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT095N10K | Goford Semiconductor | Description: N100V, RD(MAX)<10.5M@10V,RD(MAX) Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1667 pF @ 50 V | auf Bestellung 3922 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT095N10S | Goford Semiconductor | Description: MOSFET N-CH 100V 11A SOP-8 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V FET Feature: Standard Power Dissipation (Max): 3.1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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