Produkte > GT0
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| GT001 | POWERDATA TECHNOLOGIES | Description: POWERDATA TECHNOLOGIES - GT001 - Tülle, 12 mm, 30 mm tariffCode: 85443000 productTraceability: No rohsCompliant: YES Kabeldurchmesser, min.: 12mm euEccn: NLR isCanonical: Y hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Kabeldurchmesser, max.: 30mm Produktpalette: - SVHC: To Be Advised | auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT0036-17M000 | NMB Technologies Corporation | Description: HYBRID 17 STEP MOTOR LOW BACKLAS Features: Flatted Shaft Packaging: Bulk Voltage - Rated: 24VDC Size / Dimension: Square - 1.654" x 1.654" (42.00mm x 42.00mm) Type: Hybrid Gear Motor Operating Temperature: -10°C ~ 50°C Termination Style: Wire Leads Step Angle: 0.5° Torque - Holding (oz-in / mNm): 49.56 / 350 Coil Type: Unipolar Diameter - Shaft: 0.236" (6.00mm) Mounting Hole Spacing: 1.220" (31.00mm) Length - Shaft and Bearing: 0.787" (20.00mm) NEMA Frame Size: 17 Current Rating (Amps): 1 A Coil Resistance: 3.1 Ohms Steps per Revolution: 720.0 | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT0036-23M201 | NMB Technologies Corporation | Description: HYBRID 23 STEP MOTOR LOW BACKLAS Steps per Revolution: 720.0 Coil Resistance: 5.8 Ohms Current Rating (Amps): 900 mA NEMA Frame Size: 24 Length - Shaft and Bearing: 1.260" (32.00mm) Mounting Hole Spacing: 1.949" (49.50mm) Diameter - Shaft: 0.315" (8.00mm) Coil Type: Unipolar Torque - Holding (oz-in / mNm): 177.04 / 1250 Step Angle: 0.5° Termination Style: Wire Leads Operating Temperature: -10°C ~ 50°C Type: Hybrid Gear Motor Size / Dimension: Square - 2.362" x 2.362" (60.00mm x 60.00mm) Voltage - Rated: 24VDC Features: Flatted Shaft Packaging: Bulk | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT0043 | Marathon Motors | Description: 1800RPM, 75HP, 3PH, 230/460V, 36 Part Status: Active Type: AC Motor RPM: 1800 RPM Function: Standard Voltage - Rated: 208 ~ 230/460VAC Packaging: Bulk | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT0072-17M000 | NMB Technologies Corporation | Description: HYBRID 17 STEP MOTOR LOW BACKLAS Features: Flatted Shaft Packaging: Bulk Voltage - Rated: 24VDC Size / Dimension: Square - 1.654" x 1.654" (42.00mm x 42.00mm) Type: Hybrid Gear Motor Operating Temperature: -10°C ~ 50°C Termination Style: Wire Leads Step Angle: 0.25° Torque - Holding (oz-in / mNm): 99.1 / 700 Coil Type: Unipolar Diameter - Shaft: 0.236" (6.00mm) Mounting Hole Spacing: 1.220" (31.00mm) Length - Shaft and Bearing: 0.787" (20.00mm) NEMA Frame Size: 17 Current Rating (Amps): 1 A Coil Resistance: 3.1 Ohms Steps per Revolution: 1440 | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT0072-23M201 | NMB Technologies Corporation | Description: HYBRID 23 STEP MOTOR LOW BACKLAS Features: Flatted Shaft Packaging: Bulk Voltage - Rated: 24VDC Size / Dimension: Square - 2.362" x 2.362" (60.00mm x 60.00mm) Type: Hybrid Gear Motor Operating Temperature: -10°C ~ 50°C Termination Style: Wire Leads Step Angle: 0.25° Torque - Holding (oz-in / mNm): 354.07 / 2500 Coil Type: Unipolar Diameter - Shaft: 0.315" (8.00mm) Mounting Hole Spacing: 1.949" (49.50mm) Length - Shaft and Bearing: 1.260" (32.00mm) NEMA Frame Size: 24 Current Rating (Amps): 900 mA Coil Resistance: 5.8 Ohms Steps per Revolution: 1440.0 | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT007N04TL | Goford Semiconductor | Description: N40V,150A,RD<1.5M@10V,VTH1.0V~2. Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7363 pF @ 20 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT007N04TL | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 40V; 345A; 159W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 345A Power dissipation: 159W Case: TOLL Gate-source voltage: ±20V Mounting: SMD Gate charge: 125nC Kind of channel: enhancement Technology: SGT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT009N04D5 | Goford Semiconductor | Description: N40V,100A,RD<1.3M@10V,VTH1.0V~2. Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 20A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6864 pF @ 20 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT01-C100R4-8P | MITSUBISHI | Description: MITSUBISHI - GT01-C100R4-8P - RS-422-KABEL, 10M, GRAPHISCHES TERMINAL Art des Zubehörs: Kabel, RS-422 Zur Verwendung mit: Grafische Bedienterminals der Produktreihe GT10 GOT1000 von Mitsubishi Produktpalette: GT10 SVHC: No SVHC (16-Jan-2020) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT01-C10R4-8P | MITSUBISHI | Description: MITSUBISHI - GT01-C10R4-8P - RS-422-KABEL, 1M, GRAPHISCHES TERMINAL Art des Zubehörs: Kabel, RS-422 Zur Verwendung mit: Grafische Bedienterminals der Produktreihe GT10 GOT1000 von Mitsubishi Produktpalette: GT10 SVHC: No SVHC (16-Jan-2020) | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT01-C30R2-6P | MITSUBISHI | Description: MITSUBISHI - GT01-C30R2-6P - RS-232-KABEL, 3M, GRAPHISCHES TERMINAL Art des Zubehörs: Kabel, RS-232 Zur Verwendung mit: Grafische Bedienterminals der Produktreihe GT10 GOT1000 von Mitsubishi Produktpalette: GT10 SVHC: No SVHC (16-Jan-2020) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT01-C30R4-8P | MITSUBISHI | Description: MITSUBISHI - GT01-C30R4-8P - RS-422-KABEL, 3M, GRAPHISCHES TERMINAL tariffCode: 85444290 Art des Zubehörs: Kabel, RS-422 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA Zur Verwendung mit: Grafische Bedienterminals der Produktreihe GT10 GOT1000 von Mitsubishi usEccn: EAR99 Produktpalette: GT10 SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT0100 | N/A | 00+ PLCC | auf Bestellung 90 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT0100-17M000 | NMB Technologies Corporation | Description: HYBRID 17 STEP MOTOR LOW BACKLAS Mounting Hole Spacing: 1.220" (31.00mm) Diameter - Shaft: 0.236" (6.00mm) Coil Type: Unipolar Torque - Holding (oz-in / mNm): 141.63 / 1000 Step Angle: 0.18° Termination Style: Wire Leads Operating Temperature: -10°C ~ 50°C Type: Hybrid Gear Motor Size / Dimension: Square - 1.654" x 1.654" (42.00mm x 42.00mm) Voltage - Rated: 24VDC Features: Flatted Shaft Packaging: Bulk Steps per Revolution: 2000 Coil Resistance: 3.1 Ohms Current Rating (Amps): 1 A NEMA Frame Size: 17 Length - Shaft and Bearing: 0.787" (20.00mm) | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT0100-23M201 | NMB Technologies Corporation | Description: HYBRID 23 STEP MOTOR LOW BACKLAS Features: Flatted Shaft Packaging: Bulk Voltage - Rated: 24VDC Size / Dimension: Square - 2.362" x 2.362" (60.00mm x 60.00mm) Type: Hybrid Gear Motor Operating Temperature: -10°C ~ 50°C Termination Style: Wire Leads Step Angle: 0.18° Torque - Holding (oz-in / mNm): 424.93 / 3000 Coil Type: Unipolar Diameter - Shaft: 0.315" (8.00mm) Mounting Hole Spacing: 1.949" (49.50mm) Length - Shaft and Bearing: 1.260" (32.00mm) NEMA Frame Size: 24 Current Rating (Amps): 900 mA Coil Resistance: 5.8 Ohms Steps per Revolution: 2000.0 | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT010N10TL | Goford Semiconductor | Description: MOSFET,N-CH,100V,370A,400W,TOLL- | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT010N10TL | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 370A; 400W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 370A Power dissipation: 400W Case: TOLL Gate-source voltage: ±20V Mounting: SMD Gate charge: 0.22µC Kind of channel: enhancement Technology: SGT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT010N10TL | Goford Semiconductor | Description: MOSFET N-CH 100V 370A 400W 1.35M Packaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 370A (Tc) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 184 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13166 pF @ 50 V | auf Bestellung 1086 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT010N10TL | Goford Semiconductor | Description: MOSFET N-CH 100V 370A 400W 1.35M Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 370A (Tc) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 184 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13166 pF @ 50 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT011N03D5E | Goford Semiconductor | Description: MOSFET N-CH ESD 30V 209A DFN5*6- Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 209A (Tc) Rds On (Max) @ Id, Vgs: 0.95mOhm @ 10A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 15 V | auf Bestellung 4987 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT011N03D5E | Goford Semiconductor | Description: MOSFET N-CH ESD 30V 209A DFN5*6- Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 209A (Tc) Rds On (Max) @ Id, Vgs: 0.95mOhm @ 10A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT011N03D5E | Goford Semiconductor | Description: MOSFET N-CH ESD 30V 209A DFN5*6- Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 209A (Tc) Rds On (Max) @ Id, Vgs: 0.95mOhm @ 10A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6503 pF @ 15 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT011N03ME | Goford Semiconductor | Description: MOSFET N-CH ESD 30V A TO-263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 209A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 10A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V | auf Bestellung 794 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT011N03ME | Goford Semiconductor | Description: MOSFET N-CH ESD 30V A TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 209A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 10A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT011N03TE | Goford Semiconductor | Description: MOSFET N-CH ESD 30V 209A 89W TO Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 209A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5988 pF @ 15 V | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT011N03TLE | Goford Semiconductor | Description: MOSFET N-CH 30V 250A 300W 1.2M( Input Capacitance (Ciss) (Max) @ Vds: 6278 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±18V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 300W (Tc) Current - Continuous Drain (Id) @ 25°C: 250A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.2mOhm @ 10A, 10V Supplier Device Package: TOLL-8L Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT011N03TLE | Goford Semiconductor | Description: MOSFET N-CH 30V 250A 300W 1.2m( Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 10A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6278 pF @ 15 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT011N03TLE | Goford Semiconductor | Description: MOSFET N-CH 30V 250A 300W 1.2M( Power Dissipation (Max): 300W (Tc) Current - Continuous Drain (Id) @ 25°C: 250A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 1.2mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 6278 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±18V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TOLL-8L Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) | auf Bestellung 1990 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT011N03TLE | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 30V; 250A; 300W; TOLL; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 250A Power dissipation: 300W Case: TOLL Gate-source voltage: ±18V Mounting: SMD Gate charge: 84nC Kind of channel: enhancement Version: ESD Technology: SGT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT013N04D5 | GOFORD Semiconductor | N-CH,40V,195A,RD(max) Less Than 1.7mOhm at 10V,VTH 2V to 4V, DFN5x6-8L | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT013N04D5 | Goford Semiconductor | Description: MOSFET N-CH 40V 195A 96W 1.7m(ma Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3927 pF @ 20 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT013N04D5 | Goford Semiconductor | Description: N40V,195A,RD<1.7M@10V,VTH2.0V~4. Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3927 pF @ 20 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT013N04Q | Goford Semiconductor | Description: MOSFET N-CH 40V 195A 96W TO-247 Current - Continuous Drain (Id) @ 25°C: 195A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Flat Leads Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V | auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT013N04TI | Goford Semiconductor | Description: MOSFET N-CH 40V 220A TO-220 Input Capacitance (Ciss) (Max) @ Vds: 3986 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | auf Bestellung 38 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT013N04TI | GOFORD Semiconductor | N-CH,40V,220A,RD(max) Less Than 2.5mOhm at 10V,VTH 2V to 5V, TO-220 | auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT015N06TL | Goford Semiconductor | Description: MOSFET N-CH 60V 350A 350W 1M(MA Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 80A, 10V Power Dissipation (Max): 350W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10694 pF @ 30 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT015N06TL | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 60V; 350A; 350W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 350A Power dissipation: 350W Case: TOLL Gate-source voltage: ±20V Mounting: SMD Gate charge: 204nC Kind of channel: enhancement Technology: SGT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT015N06TL | Goford Semiconductor | Description: MOSFET N-CH 60V 350A 350W 1M(MA Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 80A, 10V Power Dissipation (Max): 350W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10694 pF @ 30 V | auf Bestellung 1956 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT015N10TL | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 365A; 395W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 365A Power dissipation: 395W Case: TOLL Gate-source voltage: ±20V Mounting: SMD Gate charge: 260nC Kind of channel: enhancement Technology: SGT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT015N10TL | Goford Semiconductor | Description: MOSFET N-CH 100V,365A,395W TOLL- Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 365A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V Power Dissipation (Max): 395W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 50 V | auf Bestellung 16 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT015N10TL | GOFORD Semiconductor | GT015N10TL | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT015N10TL | Goford Semiconductor | Description: MOSFET N-CH 100V,365A,395W TOLL- Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 365A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V Power Dissipation (Max): 395W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 50 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT016N10Q | Goford Semiconductor | Description: MOSFET N-CH 100V 228A TO-247 Packaging: Tube Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 228A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9530 pF @ 50 V | auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT016N10TL | Goford Semiconductor | Description: MOSFET N-CH 100V 362A TOLL-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 362A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 15A, 10V Power Dissipation (Max): 450W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10037 pF @ 50 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT016N10TL | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 362A; 380W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 362A Power dissipation: 380W Case: TOLL Gate-source voltage: ±20V Mounting: SMD Gate charge: 165nC Kind of channel: enhancement Technology: SGT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT016N10TL | Goford Semiconductor | Description: MOSFET N-CH 100V 362A TOLL-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 362A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 15A, 10V Power Dissipation (Max): 450W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10037 pF @ 50 V | auf Bestellung 1344 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT019N04D5 | Goford Semiconductor | Description: N40V,120A,RD<2.8M@10V,VTH1.0V~2. Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 10A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 20 V | auf Bestellung 4610 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT019N04D5 | Goford Semiconductor | Description: N40V,120A,RD<2.8M@10V,VTH1.0V~2. Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 10A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 20 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT019N04D5 | Goford Semiconductor | Description: MOSFET N-CH 40V 120A DFN5*6-8L Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 10A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 20 V | auf Bestellung 50000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT019N04D5 Produktcode: 200326
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Lieblingsprodukt
| Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar
| Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| GT02-110-019 | ICE Components, Inc. | Description: SMT GATE DRIVE TRANSFORMER Packaging: Tape & Reel (TR) Inductance: 785µH Size / Dimension: 0.340" L x 0.265" W (8.64mm x 6.73mm) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 130°C Transformer Type: Gate Drive Turns Ratio - Primary:Secondary: 1:1 ET (Volt-Time): 19.4VµS Height - Seated (Max): 0.118" (3.00mm) | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT02-110-019 | ICE Components | Pulse Transformers SMT Gate Driver Transformer 1:1 | auf Bestellung 1349 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT02-110-019 | ICE Components, Inc. | Description: SMT GATE DRIVE TRANSFORMER Packaging: Cut Tape (CT) Inductance: 785µH Size / Dimension: 0.340" L x 0.265" W (8.64mm x 6.73mm) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 130°C Transformer Type: Gate Drive Turns Ratio - Primary:Secondary: 1:1 ET (Volt-Time): 19.4VµS Height - Seated (Max): 0.118" (3.00mm) | auf Bestellung 466 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT0200-17M000 | NMB Technologies Corporation | Description: HYBRID 17 STEP MOTOR LOW BACKLAS Features: Flatted Shaft Packaging: Bulk Voltage - Rated: 24VDC Size / Dimension: Square - 1.654" x 1.654" (42.00mm x 42.00mm) Type: Hybrid Gear Motor Operating Temperature: -10°C ~ 50°C Termination Style: Wire Leads Step Angle: 0.09° Torque - Holding (oz-in / mNm): 212.44 / 1500 Coil Type: Unipolar Diameter - Shaft: 0.236" (6.00mm) Mounting Hole Spacing: 1.220" (31.00mm) Length - Shaft and Bearing: 0.787" (20.00mm) NEMA Frame Size: 17 Current Rating (Amps): 1 A Coil Resistance: 3.1 Ohms Steps per Revolution: 4000 | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT0200-23M201 | NMB Technologies Corporation | Description: HYBRID 23 STEP MOTOR LOW BACKLAS Features: Flatted Shaft Packaging: Bulk Voltage - Rated: 24VDC Size / Dimension: Square - 2.362" x 2.362" (60.00mm x 60.00mm) Type: Hybrid Gear Motor Operating Temperature: -10°C ~ 50°C Termination Style: Wire Leads Step Angle: 0.09° Torque - Holding (oz-in / mNm): 495.75 / 3500 Coil Type: Unipolar Diameter - Shaft: 0.315" (8.00mm) Mounting Hole Spacing: 1.949" (49.50mm) Length - Shaft and Bearing: 1.260" (32.00mm) NEMA Frame Size: 24 Current Rating (Amps): 900 mA Coil Resistance: 5.8 Ohms Steps per Revolution: 4000.0 | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT020N04M | Goford Semiconductor | Description: MOSFET,N-CH,40V,140A,85W,TO-263 Input Capacitance (Ciss) (Max) @ Vds: 3235 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V Supplier Device Package: TO-263 Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) | auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT020N04M | Goford Semiconductor | Description: MOSFET,N-CH,40V,140A,85W,TO-263 Input Capacitance (Ciss) (Max) @ Vds: 3235 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V Supplier Device Package: TO-263 Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT020N10M | Goford Semiconductor | Description: MOSFET,N-CH,100V,236A,270W,TO-26 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 236A (Tc) Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-263 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT020N10M | Goford Semiconductor | Description: MOSFET,N-CH,100V,236A,270W,TO-26 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 236A (Tc) Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-263 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 50 V | auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT020N10TL | Goford Semiconductor | Description: MOSFET N-CH 100V 300A 330W 2.0M( Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 50 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT020N10TL | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 300A; 330W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 300A Power dissipation: 330W Case: TOLL Gate-source voltage: ±20V Mounting: SMD Gate charge: 160nC Kind of channel: enhancement Technology: SGT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT020N10TL | Goford Semiconductor | Description: MOSFET,N-CH,100V,300A,330W,TOLL- Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 330W Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 50 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT020N10TL | Goford Semiconductor | Description: MOSFET N-CH 100V 300A 330W 2.0M( Packaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 50 V | auf Bestellung 1740 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT020Z-2 | POWER ONE | 07+ | auf Bestellung 1015 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT023N10M | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 226A; 265W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 226A Power dissipation: 265W Case: TO263 Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement Gate charge: 137nC Technology: SGT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT023N10M | Goford Semiconductor | Description: MOSFET N-CH 100V 226A TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 226A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8050 pF @ 50 V | auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT023N10Q | GOFORD SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 226A; 250W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 226A Power dissipation: 250W Case: TO247 Gate-source voltage: ±20V Mounting: THT Kind of channel: enhancement Gate charge: 121nC Technology: SGT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT023N10Q | Goford Semiconductor | Description: MOSFET N-CH 100V 226A 250W TO-2 Input Capacitance (Ciss) (Max) @ Vds: 8488 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 226A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube | auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT023N10Q | GOFORD Semiconductor | Enhancement Mode Power MOSFET | auf Bestellung 9990 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT023N10T | Goford Semiconductor | Description: N100V, 140A,RD<2.7M@10V,VTH2.7V~ Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4.3V @ 250µA Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 8086 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 100 V | auf Bestellung 141 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT023N10T | Goford Semiconductor | Description: MOSFET N-CH 100V 226A 250W 2.7m( Input Capacitance (Ciss) (Max) @ Vds: 8086 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4.3V @ 250µA Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT023N10T | GOFORD SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 226A; 250W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 226A Power dissipation: 250W Case: TO220 Gate-source voltage: ±20V Mounting: THT Kind of channel: enhancement Gate charge: 137nC Technology: SGT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT023N10TL | Goford Semiconductor | Description: MOSFET N-CH 100V 330A TOLL-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 10V Power Dissipation (Max): 395W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8058 pF @ 50 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT023N10TL | Goford Semiconductor | Description: MOSFET N-CH 100V 330A TOLL-8 Input Capacitance (Ciss) (Max) @ Vds: 8058 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TOLL Vgs(th) (Max) @ Id: 3.8V @ 250µA Power Dissipation (Max): 395W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 330A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT023N10TL | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 330A; 395W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 330A Power dissipation: 395W Case: TOLL Gate-source voltage: ±20V Mounting: SMD Gate charge: 121nC Kind of channel: enhancement Technology: SGT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT023N10TL | GOFORD Semiconductor | GT023N10TL | auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT023N10TL | Goford Semiconductor | Description: MOSFET N-CH 100V 330A TOLL-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 10V Power Dissipation (Max): 395W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8058 pF @ 50 V | auf Bestellung 1586 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT025N06AD5 | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 60V; 170A; 215W; DFN5x6-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 170A Power dissipation: 215W Case: DFN5x6-8 Gate-source voltage: ±20V Mounting: SMD Gate charge: 102nC Kind of channel: enhancement Technology: SGT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT025N06AD5 | GOFORD Semiconductor | N-CH,60V,170A,RD(max) Less Than 2mOhm at 10V,RD(max) Less Than 2.5mOhm at 4.5V,VTH 1.2V to 2.5V,DFN5x6-8L | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT025N06AD5 | Goford Semiconductor | Description: N60V, 170A, RD<2.2M@10V,VTH1.2V~ Packaging: Cut Tape (CT) Part Status: Active Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5044 pF @ 30 V | auf Bestellung 3092 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT025N06AD5 | Goford Semiconductor | Description: N60V, 170A, RD<2.2M@10V,VTH1.2V~ Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5044 pF @ 30 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT025N06AK | Goford Semiconductor | Description: MOSFET,N-CH,60V,170A,215W,DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 30 V | auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT025N06AK | Goford Semiconductor | Description: MOSFET,N-CH,60V,170A,215W,DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT025N06AM | Goford Semiconductor | Description: N60V,170A,RD<2.5M@10V,VTH1.2V~2. Packaging: Tape & Reel (TR) Part Status: Active Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5119 pF @ 30 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT025N06AM | Goford Semiconductor | Description: MOSFET N-CH 60V 170A TO-263 | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT025N06AM | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 60V; 170A; 215W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 170A Power dissipation: 215W Case: TO263 Gate-source voltage: ±20V Mounting: SMD Gate charge: 70nC Kind of channel: enhancement Technology: SGT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT025N06AM | GOFORD Semiconductor | N-CH,60V,170A,RD(max) Less Than 2.5mOhm at 10V,RD(max) Less Than 3.0mOhm at 4.5V,VTH 1.2V to 2.5V, TO-263 | auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT025N06AM | Goford Semiconductor | Description: N60V,170A,RD<2.5M@10V,VTH1.2V~2. Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5119 pF @ 30 V | auf Bestellung 776 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT025N06AM6 | Goford Semiconductor | Description: N60V,170A,RD<2.0M@10V,VTH1.2V~2. Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5058 pF @ 30 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT025N06AM6 | Goford Semiconductor | Description: N60V,170A,RD<2.0M@10V,VTH1.2V~2. Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5058 pF @ 30 V | auf Bestellung 494 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT025N06AQ | Goford Semiconductor | Description: MOSFET N-CH 60V 175A 220W 2.5M(M Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 175A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 220W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT025N06AQ | GOFORD SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 60V; 175A; 220W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 175A Power dissipation: 220W Case: TO247 Gate-source voltage: ±20V Mounting: THT Gate charge: 70nC Kind of channel: enhancement Technology: SGT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT025N06AQ | Goford Semiconductor | Description: MOSFET,N-CH,60V,175A,220W,TO-247 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT025N06AT | Goford Semiconductor | Description: N60V, 170A,RD<2.5M@10V,VTH1.2V~2 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4954 pF @ 30 V | auf Bestellung 80 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT025N06AT | GOFORD Semiconductor | N-CH,60V,170A,RD(max) Less Than 2.5mOhm at 10V,RD(max) Less Than 3.2mOhm at 4.5V,VTH 1.2V to 2.5V, TO-220 | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GT025N06AT | Goford Semiconductor | Description: MOSFET N-CH 60V 170A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT025N06AT | GOFORD SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 60V; 170A; 215W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 170A Power dissipation: 215W Case: TO220 Gate-source voltage: ±20V Mounting: THT Gate charge: 70nC Kind of channel: enhancement Technology: SGT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT025N06D5 | Goford Semiconductor | Description: N60V,RD(MAX)<2.7M@10V,RD(MAX)<3. Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5125 pF @ 30 V | auf Bestellung 471 Stücke: Lieferzeit 10-14 Tag (e) |
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| GT025N06D5 | Goford Semiconductor | Description: N60V,RD(MAX)<2.7M@10V,RD(MAX)<3. Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5125 pF @ 30 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |