Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (129137) > Seite 2087 nach 2153
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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IPB65R190CFDATMA1 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Drain-source voltage: 650V Drain current: 17.5A Power dissipation: 151W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhancement Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPD65R190C7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; 28W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.2A Power dissipation: 28W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPL65R190E6AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ Drain-source voltage: 650V Drain current: 20.2A Power dissipation: 151W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhancement Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPA60R360P7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 22W; TO220FP; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Power dissipation: 22W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 26A Version: ESD |
auf Bestellung 32 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPD60R360P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 41W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 13nC Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPD60R360P7SAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 41W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Power dissipation: 41W Case: DPAK; TO252 On-state resistance: 0.36Ω Mounting: SMD Gate charge: 13nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPD60R360P7SE8228AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 41W; DPAK3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Power dissipation: 41W Case: DPAK3 On-state resistance: 702mΩ Mounting: SMD Gate charge: 13nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IPD60R360PFD7SAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 6A; Idm: 24A Type of transistor: N-MOSFET Technology: CoolMOS™ PFD7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 43W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 715mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 24A Version: ESD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IPN60R360P7SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 7W; PG-SOT223 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Power dissipation: 7W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: SMD Kind of channel: enhancement Pulsed drain current: 26A Version: ESD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IPB013N06NF2SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 60V; 198A; 300W; D2PAK,TO263 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 60V Drain current: 198A Power dissipation: 300W Case: D2PAK; TO263 On-state resistance: 1.3mΩ Mounting: SMD Gate charge: 203nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| S25FL064LABMFB013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8 Operating temperature: -40...105°C Mounting: SMD Type of integrated circuit: FLASH memory Application: automotive Memory: 64Mb FLASH Operating frequency: 108MHz Kind of interface: serial Kind of package: reel; tape Case: SOIC8 Interface: QUAD SPI Operating voltage: 2.7...3.6V Kind of memory: NOR |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2100 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| S25FL128LAGMFB013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8 Operating temperature: -40...105°C Mounting: SMD Type of integrated circuit: FLASH memory Application: automotive Memory: 128Mb FLASH Operating frequency: 133MHz Kind of interface: serial Kind of package: reel; tape Case: SOIC8 Interface: QUAD SPI Operating voltage: 2.7...3.6V Kind of memory: NOR |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2100 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| S25FL128LAGNFB013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8 Operating temperature: -40...105°C Mounting: SMD Type of integrated circuit: FLASH memory Application: automotive Memory: 128Mb FLASH Operating frequency: 133MHz Kind of interface: serial Kind of package: reel; tape Case: WSON8 Interface: QUAD SPI Operating voltage: 2.7...3.6V Kind of memory: NOR |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| S25FL128SAGMFB013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16 Operating temperature: -40...105°C Mounting: SMD Type of integrated circuit: FLASH memory Application: automotive Memory: 128Mb FLASH Operating frequency: 133MHz Kind of interface: serial Kind of package: reel; tape Case: SOIC16 Interface: QUAD SPI Operating voltage: 2.7...3.6V Kind of memory: NOR |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1450 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| S25FL256SAGMFB013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: SOIC16 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Application: automotive Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1450 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| S25FL512SAGMFB013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16 Operating temperature: -40...105°C Mounting: SMD Type of integrated circuit: FLASH memory Application: automotive Memory: 512Mb FLASH Operating frequency: 133MHz Kind of interface: serial Kind of package: reel; tape Case: SOIC16 Interface: QUAD SPI Operating voltage: 2.7...3.6V Kind of memory: NOR |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1450 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| S25FL512SDSMFB013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16 Operating temperature: -40...105°C Mounting: SMD Type of integrated circuit: FLASH memory Application: automotive Memory: 512Mb FLASH Operating frequency: 80MHz Kind of interface: serial Kind of package: reel; tape Case: SOIC16 Interface: QUAD SPI Operating voltage: 2.7...3.6V Kind of memory: NOR |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1450 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| S25FS512SAGMFB013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16 Operating temperature: -40...105°C Mounting: SMD Type of integrated circuit: FLASH memory Application: automotive Memory: 512Mb FLASH Operating frequency: 133MHz Kind of interface: serial Kind of package: reel; tape Case: SOIC16 Interface: QUAD SPI Operating voltage: 1.7...2V Kind of memory: NOR |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1450 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| S25FS512SDSNFB013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8 Operating temperature: -40...105°C Mounting: SMD Type of integrated circuit: FLASH memory Application: automotive Memory: 512Mb FLASH Operating frequency: 80MHz Kind of interface: serial Kind of package: reel; tape Case: WSON8 Interface: QUAD SPI Operating voltage: 1.7...2V Kind of memory: NOR |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| S28HL512TFPBHB013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24 Operating temperature: -40...105°C Mounting: SMD Type of integrated circuit: FLASH memory Application: automotive Memory: 512Mb FLASH Operating frequency: 166MHz Kind of interface: serial Kind of package: reel; tape Case: BGA24 Interface: octal Operating voltage: 2.7...3.6V Kind of memory: NOR |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| S28HS512TGABHB013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial Operating temperature: -40...105°C Mounting: SMD Type of integrated circuit: FLASH memory Application: automotive Memory: 512Mb FLASH Operating frequency: 200MHz Kind of interface: serial Kind of package: reel; tape Case: BGA24 Interface: octal Operating voltage: 1.7...2V Kind of memory: NOR |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| S29GL128S10DHB013 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 100ns; BGA64; parallel Operating temperature: -40...105°C Mounting: SMD Access time: 100ns Type of integrated circuit: FLASH memory Application: automotive Memory: 128Mb FLASH Kind of interface: parallel Kind of package: reel; tape Case: BGA64 Interface: CFI; parallel Operating voltage: 2.7...3.6V Kind of memory: NOR |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2200 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| S70GL02GS11FHB013 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel Operating temperature: -40...105°C Mounting: SMD Access time: 110ns Type of integrated circuit: FLASH memory Application: automotive Memory: 2Gb FLASH Kind of interface: parallel Kind of package: reel; tape Case: BGA64 Interface: CFI; parallel Operating voltage: 2.7...3.6V Kind of memory: NOR |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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1EDF5673FXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16 Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Technology: EiceDRIVER™; GaN Case: PG-DSO-16 Output current: -8...4A Number of channels: 1 Integrated circuit features: galvanically isolated Mounting: SMD Kind of package: reel; tape Supply voltage: 3...3.5V; 6.5...20V Voltage class: 650V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPW60R070C6FKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Power dissipation: 391W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 238 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRG4PSH71KDPBF | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 78A Power dissipation: 350W Case: SUPER247 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| AUIRG4PC40S-E | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 60A; 160W; TO247AD; 0.45mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 60A Power dissipation: 160W Case: TO247AD Gate-emitter voltage: ±20V Pulsed collector current: 31A Mounting: THT Gate charge: 150nC Turn-on time: 22ns Turn-on switching energy: 0.45mJ |
auf Bestellung 39600 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IRFR220NTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK Mounting: SMD Power dissipation: 43W Polarisation: unipolar Technology: HEXFET® Drain current: 5A Kind of channel: enhancement Drain-source voltage: 200V Type of transistor: N-MOSFET Kind of package: reel Case: DPAK |
auf Bestellung 1796 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRL7472L1TRPbF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 68A; DirectFET-L8 Mounting: SMD Polarisation: unipolar Drain current: 68A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Kind of package: reel; tape Case: DirectFET-L8 |
auf Bestellung 3916 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF8714TRPBFXTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 14A; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 14A Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 425 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPW60R120P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 95W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 95W Case: TO247-3 On-state resistance: 0.1Ω Mounting: THT Kind of channel: enhancement Gate charge: 36nC |
auf Bestellung 238 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFR4104TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 119A Power dissipation: 140W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 945 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPA80R450P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 29W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Power dissipation: 29W Case: TO220-3 On-state resistance: 0.45Ω Mounting: THT Gate charge: 24nC Kind of channel: enhancement |
auf Bestellung 114 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPAN80R360P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 30W; TO220FP; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.6A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: THT Kind of channel: enhancement Gate charge: 30nC Version: ESD Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BSD235NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363 Type of transistor: N-MOSFET x2 Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.95A Power dissipation: 0.5W Case: SOT363 Gate-source voltage: ±12V On-state resistance: 0.35Ω Mounting: SMD Kind of channel: enhancement |
auf Bestellung 312 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FM24CL64B-DG | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8 Case: DFN8 Mounting: SMD Type of integrated circuit: FRAM memory Operating temperature: -40...85°C Clock frequency: 1MHz Memory: 64kb FRAM Kind of interface: serial Memory organisation: 8kx8bit Interface: I2C Kind of memory: FRAM Supply voltage: 2.7...3.6V DC |
auf Bestellung 934 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FM24CL64B-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.65VDC; 1MHz; SO8 Case: SO8 Mounting: SMD Clock frequency: 1MHz Memory: 64kb FRAM Kind of interface: serial Memory organisation: 8kx8bit Interface: I2C Kind of memory: FRAM Supply voltage: 2.7...3.65V DC Type of integrated circuit: FRAM memory Operating temperature: -40...85°C |
auf Bestellung 1920 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FM24CL64B-DGTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 64kb FRAM Interface: I2C Memory organisation: 8kx8bit Supply voltage: 2.7...3.6V DC Clock frequency: 1MHz Case: DFN8 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IKD15N60RC2ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 28A; 115.4W; DPAK Mounting: SMD Pulsed collector current: 45A Type of transistor: IGBT Case: DPAK Gate-emitter voltage: ±20V Collector current: 28A Collector-emitter voltage: 600V Power dissipation: 115.4W Gate charge: 72nC Technology: Field Stop; Trench |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRF2804STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 280A Power dissipation: 330W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 503 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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AUIRF2804STRL | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 270A Power dissipation: 300W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FM25V10-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SO8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 1Mb FRAM Interface: SPI Memory organisation: 128kx8bit Supply voltage: 2...3.6V DC Clock frequency: 40MHz Case: SO8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BSS131H6327 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 240V Drain current: 0.1A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 14Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BSS131H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 240V Drain current: 0.1A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 14Ω Mounting: SMD Kind of channel: enhancement Technology: SIPMOS™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRL7486MTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 209A; DirectFET Mounting: SMD Polarisation: unipolar Drain current: 209A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Kind of package: reel; tape Case: DirectFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| IRF7480MTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 330A; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 330A Case: DirectFET Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IRF6727MTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET Kind of package: reel Case: DirectFET Kind of channel: enhancement Mounting: SMD Technology: HEXFET® Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Power dissipation: 89W Drain current: 180A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRF6648TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 86A; 89W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 86A Power dissipation: 89W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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AUIRF7647S2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 24A; 41W; DirectFET Mounting: SMD Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Kind of package: reel Case: DirectFET Power dissipation: 41W Polarisation: unipolar Technology: HEXFET® Drain current: 24A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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AUIRF7736M2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 108A; 63W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 108A Power dissipation: 63W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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AUIRF7739L2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 270A Power dissipation: 125W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRF6775MTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 28A; 89W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 28A Power dissipation: 89W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRF7739L1TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 270A Power dissipation: 125W Case: DirectFET Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRF7739L2TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 270A Power dissipation: 125W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRF6645TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5.7A; 42W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 5.7A Power dissipation: 42W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPB80N06S405ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 75A Power dissipation: 107W Case: PG-TO263-3-2 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 81nC Kind of channel: enhancement Pulsed drain current: 320A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IPB180N06S4H1ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 180A; Idm: 720A Type of transistor: N-MOSFET Technology: OptiMOS® -T2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 180A Power dissipation: 250W Case: PG-TO263-7-3 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 720A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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2EDN8524FXTMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8 Case: PG-DSO-8 Technology: EiceDRIVER™ Number of channels: 2 Topology: MOSFET half-bridge Mounting: SMD Supply voltage: 4.5...20V Output current: -5...5A Type of integrated circuit: driver Protection: undervoltage UVP Voltage class: 20V Kind of package: reel; tape Kind of integrated circuit: gate driver; low-side |
auf Bestellung 2371 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CYUSB3KIT-003 | INFINEON TECHNOLOGIES |
Category: Development kits - others Description: Dev.kit: Cypress; expansion board Type of development kit: Cypress Connection: USB 2.0; USB 3.0 Kind of module: expansion board |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CY62128ELL-45SXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 45ns; SO32; parallel Case: SO32 Mounting: SMD Memory: 1Mb SRAM Kind of interface: parallel Memory organisation: 128kx8bit Operating voltage: 4.5...5.5V Kind of memory: SRAM Access time: 45ns IC width: 450mils Type of integrated circuit: SRAM memory |
auf Bestellung 365 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPB65R190CFDATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPD65R190C7ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; 28W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.2A
Power dissipation: 28W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; 28W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.2A
Power dissipation: 28W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPL65R190E6AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPA60R360P7SXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 22W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 22W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 26A
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 22W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 22W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 26A
Version: ESD
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
| IPD60R360P7ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPD60R360P7SAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 41W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 41W
Case: DPAK; TO252
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 41W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 41W
Case: DPAK; TO252
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPD60R360P7SE8228AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 41W; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 41W
Case: DPAK3
On-state resistance: 702mΩ
Mounting: SMD
Gate charge: 13nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 41W; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 41W
Case: DPAK3
On-state resistance: 702mΩ
Mounting: SMD
Gate charge: 13nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPD60R360PFD7SAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 43W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 715mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 24A
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 43W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 715mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 24A
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPN60R360P7SATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 26A
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 26A
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPB013N06NF2SATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 60V; 198A; 300W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 198A
Power dissipation: 300W
Case: D2PAK; TO263
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 203nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 60V; 198A; 300W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 198A
Power dissipation: 300W
Case: D2PAK; TO263
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 203nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S25FL064LABMFB013 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 64Mb FLASH
Operating frequency: 108MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC8
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 64Mb FLASH
Operating frequency: 108MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC8
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 2100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S25FL128LAGMFB013 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 128Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC8
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 128Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC8
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 2100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S25FL128LAGNFB013 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 128Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: WSON8
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 128Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: WSON8
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S25FL128SAGMFB013 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 128Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 128Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 1450 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S25FL256SAGMFB013 |
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Application: automotive
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Application: automotive
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 1450 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S25FL512SAGMFB013 |
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 1450 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S25FL512SDSMFB013 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 80MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 80MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 1450 Stücke
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| S25FS512SAGMFB013 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 1.7...2V
Kind of memory: NOR
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 1.7...2V
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 1450 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S25FS512SDSNFB013 |
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 80MHz
Kind of interface: serial
Kind of package: reel; tape
Case: WSON8
Interface: QUAD SPI
Operating voltage: 1.7...2V
Kind of memory: NOR
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 80MHz
Kind of interface: serial
Kind of package: reel; tape
Case: WSON8
Interface: QUAD SPI
Operating voltage: 1.7...2V
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| S28HL512TFPBHB013 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 166MHz
Kind of interface: serial
Kind of package: reel; tape
Case: BGA24
Interface: octal
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 166MHz
Kind of interface: serial
Kind of package: reel; tape
Case: BGA24
Interface: octal
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S28HS512TGABHB013 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 200MHz
Kind of interface: serial
Kind of package: reel; tape
Case: BGA24
Interface: octal
Operating voltage: 1.7...2V
Kind of memory: NOR
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 200MHz
Kind of interface: serial
Kind of package: reel; tape
Case: BGA24
Interface: octal
Operating voltage: 1.7...2V
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S29GL128S10DHB013 |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 100ns
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 128Mb FLASH
Kind of interface: parallel
Kind of package: reel; tape
Case: BGA64
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 100ns
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 128Mb FLASH
Kind of interface: parallel
Kind of package: reel; tape
Case: BGA64
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 2200 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S70GL02GS11FHB013 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 110ns
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 2Gb FLASH
Kind of interface: parallel
Kind of package: reel; tape
Case: BGA64
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 110ns
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 2Gb FLASH
Kind of interface: parallel
Kind of package: reel; tape
Case: BGA64
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1EDF5673FXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Output current: -8...4A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3...3.5V; 6.5...20V
Voltage class: 650V
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Output current: -8...4A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3...3.5V; 6.5...20V
Voltage class: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPW60R070C6FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)
| IRG4PSH71KDPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 78A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 78A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AUIRG4PC40S-E |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 160W; TO247AD; 0.45mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 160W
Case: TO247AD
Gate-emitter voltage: ±20V
Pulsed collector current: 31A
Mounting: THT
Gate charge: 150nC
Turn-on time: 22ns
Turn-on switching energy: 0.45mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 160W; TO247AD; 0.45mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 160W
Case: TO247AD
Gate-emitter voltage: ±20V
Pulsed collector current: 31A
Mounting: THT
Gate charge: 150nC
Turn-on time: 22ns
Turn-on switching energy: 0.45mJ
auf Bestellung 39600 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFR220NTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK
Mounting: SMD
Power dissipation: 43W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Kind of package: reel
Case: DPAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK
Mounting: SMD
Power dissipation: 43W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Kind of package: reel
Case: DPAK
auf Bestellung 1796 Stücke:
Lieferzeit 14-21 Tag (e)
| IRL7472L1TRPbF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 68A; DirectFET-L8
Mounting: SMD
Polarisation: unipolar
Drain current: 68A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: DirectFET-L8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 68A; DirectFET-L8
Mounting: SMD
Polarisation: unipolar
Drain current: 68A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: DirectFET-L8
auf Bestellung 3916 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF8714TRPBFXTMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)
| IPW60R120P7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 95W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 95W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 36nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 95W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 95W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 36nC
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFR4104TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 119A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 119A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 945 Stücke:
Lieferzeit 14-21 Tag (e)
| IPA80R450P7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 29W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 29W
Case: TO220-3
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 24nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 29W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 29W
Case: TO220-3
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 24nC
Kind of channel: enhancement
auf Bestellung 114 Stücke:
Lieferzeit 14-21 Tag (e)
| IPAN80R360P7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 30nC
Version: ESD
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 30nC
Version: ESD
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSD235NH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.95A
Power dissipation: 0.5W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.95A
Power dissipation: 0.5W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 312 Stücke:
Lieferzeit 14-21 Tag (e)
| FM24CL64B-DG |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Case: DFN8
Mounting: SMD
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Clock frequency: 1MHz
Memory: 64kb FRAM
Kind of interface: serial
Memory organisation: 8kx8bit
Interface: I2C
Kind of memory: FRAM
Supply voltage: 2.7...3.6V DC
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Case: DFN8
Mounting: SMD
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Clock frequency: 1MHz
Memory: 64kb FRAM
Kind of interface: serial
Memory organisation: 8kx8bit
Interface: I2C
Kind of memory: FRAM
Supply voltage: 2.7...3.6V DC
auf Bestellung 934 Stücke:
Lieferzeit 14-21 Tag (e)
| FM24CL64B-GTR |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.65VDC; 1MHz; SO8
Case: SO8
Mounting: SMD
Clock frequency: 1MHz
Memory: 64kb FRAM
Kind of interface: serial
Memory organisation: 8kx8bit
Interface: I2C
Kind of memory: FRAM
Supply voltage: 2.7...3.65V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.65VDC; 1MHz; SO8
Case: SO8
Mounting: SMD
Clock frequency: 1MHz
Memory: 64kb FRAM
Kind of interface: serial
Memory organisation: 8kx8bit
Interface: I2C
Kind of memory: FRAM
Supply voltage: 2.7...3.65V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
auf Bestellung 1920 Stücke:
Lieferzeit 14-21 Tag (e)
| FM24CL64B-DGTR |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IKD15N60RC2ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 28A; 115.4W; DPAK
Mounting: SMD
Pulsed collector current: 45A
Type of transistor: IGBT
Case: DPAK
Gate-emitter voltage: ±20V
Collector current: 28A
Collector-emitter voltage: 600V
Power dissipation: 115.4W
Gate charge: 72nC
Technology: Field Stop; Trench
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 28A; 115.4W; DPAK
Mounting: SMD
Pulsed collector current: 45A
Type of transistor: IGBT
Case: DPAK
Gate-emitter voltage: ±20V
Collector current: 28A
Collector-emitter voltage: 600V
Power dissipation: 115.4W
Gate charge: 72nC
Technology: Field Stop; Trench
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF2804STRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 503 Stücke:
Lieferzeit 14-21 Tag (e)
| AUIRF2804STRL |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| FM25V10-GTR |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| BSS131H6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| BSS131H6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
Produkt ist nicht verfügbar
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| IRL7486MTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 209A; DirectFET
Mounting: SMD
Polarisation: unipolar
Drain current: 209A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: DirectFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 209A; DirectFET
Mounting: SMD
Polarisation: unipolar
Drain current: 209A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: DirectFET
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IRF7480MTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4800 Stücke
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| IRF6727MTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET
Kind of package: reel
Case: DirectFET
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Power dissipation: 89W
Drain current: 180A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET
Kind of package: reel
Case: DirectFET
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Power dissipation: 89W
Drain current: 180A
Produkt ist nicht verfügbar
Mindestbestellmenge: 4800 Stücke
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| IRF6648TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4800 Stücke
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| AUIRF7647S2TR |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; 41W; DirectFET
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: reel
Case: DirectFET
Power dissipation: 41W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 24A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; 41W; DirectFET
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: reel
Case: DirectFET
Power dissipation: 41W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 24A
Produkt ist nicht verfügbar
Mindestbestellmenge: 4800 Stücke
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| AUIRF7736M2TR |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; 63W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 108A
Power dissipation: 63W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; 63W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 108A
Power dissipation: 63W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4800 Stücke
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Stück im Wert von UAH
| AUIRF7739L2TR |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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Stück im Wert von UAH
| IRF6775MTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 28A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 28A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 28A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 28A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4800 Stücke
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Stück im Wert von UAH
| IRF7739L1TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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Stück im Wert von UAH
| IRF7739L2TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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Stück im Wert von UAH
| IRF6645TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.7A; 42W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.7A
Power dissipation: 42W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.7A; 42W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.7A
Power dissipation: 42W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4800 Stücke
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| IPB80N06S405ATMA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Power dissipation: 107W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 81nC
Kind of channel: enhancement
Pulsed drain current: 320A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Power dissipation: 107W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 81nC
Kind of channel: enhancement
Pulsed drain current: 320A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| IPB180N06S4H1ATMA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 180A; Idm: 720A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 720A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 180A; Idm: 720A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 720A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| 2EDN8524FXTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Case: PG-DSO-8
Technology: EiceDRIVER™
Number of channels: 2
Topology: MOSFET half-bridge
Mounting: SMD
Supply voltage: 4.5...20V
Output current: -5...5A
Type of integrated circuit: driver
Protection: undervoltage UVP
Voltage class: 20V
Kind of package: reel; tape
Kind of integrated circuit: gate driver; low-side
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Case: PG-DSO-8
Technology: EiceDRIVER™
Number of channels: 2
Topology: MOSFET half-bridge
Mounting: SMD
Supply voltage: 4.5...20V
Output current: -5...5A
Type of integrated circuit: driver
Protection: undervoltage UVP
Voltage class: 20V
Kind of package: reel; tape
Kind of integrated circuit: gate driver; low-side
auf Bestellung 2371 Stücke:
Lieferzeit 14-21 Tag (e)
| CYUSB3KIT-003 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress; expansion board
Type of development kit: Cypress
Connection: USB 2.0; USB 3.0
Kind of module: expansion board
Category: Development kits - others
Description: Dev.kit: Cypress; expansion board
Type of development kit: Cypress
Connection: USB 2.0; USB 3.0
Kind of module: expansion board
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| CY62128ELL-45SXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 45ns; SO32; parallel
Case: SO32
Mounting: SMD
Memory: 1Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx8bit
Operating voltage: 4.5...5.5V
Kind of memory: SRAM
Access time: 45ns
IC width: 450mils
Type of integrated circuit: SRAM memory
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 45ns; SO32; parallel
Case: SO32
Mounting: SMD
Memory: 1Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx8bit
Operating voltage: 4.5...5.5V
Kind of memory: SRAM
Access time: 45ns
IC width: 450mils
Type of integrated circuit: SRAM memory
auf Bestellung 365 Stücke:
Lieferzeit 14-21 Tag (e)