Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (128348) > Seite 2088 nach 2140
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
S29JL032J70TFI420 | INFINEON TECHNOLOGIES |
 Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; TSOP48; parallel Mounting: SMD Type of integrated circuit: FLASH memory Operating temperature: -40...85°C Memory: 32Mb FLASH Kind of interface: parallel Case: TSOP48 Interface: CFI; parallel Operating voltage: 2.7...3.6V Kind of memory: NOR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| CY9BF416NPMC-G-JNE2 | INFINEON TECHNOLOGIES |
Category: ST microcontrollers Description: CY9BF416NPMC-G-JNE2 |
auf Bestellung 2060 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 90 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IMZA65R083M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 26A; 104W; TO247-4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Power dissipation: 104W Case: TO247-4 On-state resistance: 111mΩ Mounting: THT Gate charge: 19nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| IPZA65R029CFD7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 69A; 305W; TO247-4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 69A Power dissipation: 305W Case: TO247-4 On-state resistance: 29mΩ Mounting: THT Gate charge: 145nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
T560N16TOFXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristors Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 809A; 559A; Igt: 200mA Mounting: Press-Pack Type of thyristor: hockey-puck Max. forward impulse current: 8kA Gate current: 200mA Features of semiconductor devices: phase control thyristor (PCT) Max. off-state voltage: 1.6kV Body dimensions: Ø48/Ø30mm Load current: 559A Max. load current: 809A Kind of package: in-tray Case: BG-T4814K0-1 |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
BSB008NE2LXXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 180A; 89W Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar On-state resistance: 0.8mΩ Gate-source voltage: ±20V Drain-source voltage: 25V Power dissipation: 89W Drain current: 180A Case: CanPAK™ MX; MG-WDSON-2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPTC020N13NM6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 135V; 297A; 395W; PG-HDSOP-16 Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 135V Drain current: 297A Power dissipation: 395W Case: PG-HDSOP-16 Gate-source voltage: 20V On-state resistance: 1.95mΩ Mounting: SMD Gate charge: 159nC Kind of channel: enhancement |
auf Bestellung 1800 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
IRFP4768PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 66A Pulsed drain current: 370A Power dissipation: 520W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| CY8C3866PVI-021 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: CY8C3866PVI-021 |
auf Bestellung 407 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BAT2402ELSE6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching Type of diode: Schottky switching |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BAT2402LSE6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching Type of diode: Schottky switching |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
IR2118SPBF | INFINEON TECHNOLOGIES |
 Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; high-side,gate driver; SO8; 625mW Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Case: SO8 Output current: -420...200mA Power: 625mW Number of channels: 1 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 125ns Turn-off time: 105ns |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
IR2118PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Case: DIP8 Output current: -420...200mA Power: 1W Number of channels: 1 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 125ns Turn-off time: 105ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IR2118STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
IRFI4212H-117P | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 11A; 18W; TO220FP-5 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 11A Power dissipation: 18W Case: TO220FP-5 Gate-source voltage: ±20V On-state resistance: 72.5mΩ Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IAUZ30N10S5L240ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Pulsed drain current: 120A Power dissipation: 45.5W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Technology: OptiMOS™ 5 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IPD130N10NF2SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 52A; 71W; DPAK3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 52A Power dissipation: 71W Case: DPAK3 On-state resistance: 13mΩ Mounting: SMD Gate charge: 18.6nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| ISZ230N10NM6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 48W; PG-TDSON-8 FL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 31A Power dissipation: 48W Case: PG-TDSON-8 FL On-state resistance: 23mΩ Mounting: SMD Gate charge: 7.4nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IPD30N10S3L34ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 100V; 30A; 57W; DPAK; automotive industry Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 100V Drain current: 30A Power dissipation: 57W Case: DPAK Gate-source voltage: 20V On-state resistance: 31mΩ Mounting: SMD Gate charge: 31nC Kind of channel: enhancement Application: automotive industry |
auf Bestellung 25000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
CY8C4124PVI-442T | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: PSoC microcontroller; 24MHz; SSOP28; 4kBSRAM,16kBFLASH Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART Clock frequency: 24MHz Integrated circuit features: CapSense; LCD controller Kind of core: 32-bit Memory: 4kB SRAM; 16kB FLASH Case: SSOP28 Mounting: SMD Supply voltage: 1.71...5.5V DC Number of inputs/outputs: 24 Type of integrated circuit: PSoC microcontroller Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
CY8C4014PVI-422 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: PSoC microcontroller; 16MHz; SSOP28; 2kBSRAM,16kBFLASH Interface: GPIO; I2C Mounting: SMD Case: SSOP28 Operating temperature: -40...85°C Supply voltage: 1.71...5.5V DC Number of inputs/outputs: 20 Memory: 2kB SRAM; 16kB FLASH Clock frequency: 16MHz Kind of core: 32-bit Type of integrated circuit: PSoC microcontroller Integrated circuit features: CapSense |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
CY8C4125PVI-482 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: PSoC microcontroller; 24MHz; SSOP28; 4kBSRAM,32kBFLASH Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART Clock frequency: 24MHz Integrated circuit features: CapSense; LCD controller Kind of core: 32-bit Memory: 4kB SRAM; 32kB FLASH Case: SSOP28 Mounting: SMD Supply voltage: 1.71...5.5V DC Number of inputs/outputs: 24 Type of integrated circuit: PSoC microcontroller Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2350 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
CY8C4245PVI-482 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: PSoC microcontroller; 48MHz; SSOP28; 4kBSRAM,32kBFLASH Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART Clock frequency: 48MHz Integrated circuit features: CapSense; LCD controller Kind of core: 32-bit Memory: 4kB SRAM; 32kB FLASH Case: SSOP28 Mounting: SMD Supply voltage: 1.71...5.5V DC Number of inputs/outputs: 24 Type of integrated circuit: PSoC microcontroller Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
CY8C4124PVI-432 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: PSoC microcontroller; 24MHz; SSOP28; 4kBSRAM,16kBFLASH Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART Mounting: SMD Case: SSOP28 Operating temperature: -40...85°C Supply voltage: 1.71...5.5V DC Number of inputs/outputs: 24 Memory: 4kB SRAM; 16kB FLASH Clock frequency: 24MHz Kind of core: 32-bit Type of integrated circuit: PSoC microcontroller Integrated circuit features: CapSense; LCD controller |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BGSX24MU16E6327XUSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch; DP4T; MIPI; ULGA16-1; 1.65÷3.4VDC; 0.1÷5GHz Type of integrated circuit: RF switch Mounting: SMD Case: ULGA16-1 Supply voltage: 1.65...3.4V DC Interface: MIPI Bandwidth: 0.1...5GHz Application: telecommunication Output configuration: DP4T |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BGSX24MU16E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch |
auf Bestellung 4500 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 4500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BGSX44MA12E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch Type of integrated circuit: RF switch Mounting: SMD |
auf Bestellung 4500 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 4500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| S25FL256SAGMFI011 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: SOIC16 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 47 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
BCR431UXTSA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: current regulator; LED driver Case: PG-SOT23-6 Output current: 20...100mA Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 6...42V DC |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| PVT412ASPBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; SMT; DIP6 Type of relay: solid state Contacts configuration: SPST-NO Control voltage: 1.2V DC Control current max.: 25mA Mounting: SMT Case: DIP6 Kind of output: MOSFET Operating temperature: -40...85°C |
auf Bestellung 870 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
BSR92PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -0.11A; 0.5W; SC59 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -250V Drain current: -0.11A Power dissipation: 0.5W Case: SC59 Gate-source voltage: ±20V On-state resistance: 20Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
BSP92PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -0.26A; 1.8W; PG-SOT223 Mounting: SMD Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ Drain current: -260mA Kind of channel: enhancement Drain-source voltage: -250V Type of transistor: P-MOSFET Gate-source voltage: ±20V Case: PG-SOT223 On-state resistance: 12Ω |
auf Bestellung 2243 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
BSS192PH6327FTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89 Case: PG-SOT89 Polarisation: unipolar Technology: SIPMOS™ Drain current: -0.19A Kind of channel: enhancement Drain-source voltage: -250V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Power dissipation: 1W |
auf Bestellung 3441 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| D1251S45TXPSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: hockey-puck rectifying Type of diode: hockey-puck rectifying |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
1EDI05I12AFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1 Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: high-side; IGBT gate driver Case: PG-DSO-8 Output current: -0.5...0.5A Number of channels: 1 Supply voltage: 3.1...17V; 13...35V Mounting: SMD Kind of package: reel; tape Voltage class: 1.2kV Integrated circuit features: galvanically isolated Technology: EiceDRIVER™ |
auf Bestellung 220 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
1EDI60N12AFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,MOSFET gate driver Type of integrated circuit: driver Protection: undervoltage UVP Integrated circuit features: galvanically isolated Technology: EiceDRIVER™ Voltage class: 1.2kV Kind of package: reel; tape Case: PG-DSO-8 Kind of integrated circuit: high-side; MOSFET gate driver Number of channels: 1 Topology: single transistor Mounting: SMD Supply voltage: 3.1...17V; 13...35V Output current: -6...6A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
1EDI20N12AFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8 Type of integrated circuit: driver Integrated circuit features: galvanically isolated Technology: EiceDRIVER™; GaN Voltage class: 1.2kV Kind of package: reel; tape Case: PG-DSO-8 Kind of integrated circuit: gate driver; high-side Number of channels: 1 Topology: single transistor Mounting: SMD Supply voltage: 3.1...17V; 13...35V Output current: -2...2A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
1EDI40I12AFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A Type of integrated circuit: driver Integrated circuit features: galvanically isolated Technology: EiceDRIVER™ Voltage class: 1.2kV Kind of package: reel; tape Case: PG-DSO-8 Kind of integrated circuit: high-side; IGBT gate driver Number of channels: 1 Topology: single transistor Mounting: SMD Supply voltage: 3.1...17V; 13...35V Output current: -4...4A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
1EDI60I12AFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A Type of integrated circuit: driver Integrated circuit features: galvanically isolated Technology: EiceDRIVER™ Voltage class: 1.2kV Kind of package: reel; tape Case: PG-DSO-8 Kind of integrated circuit: high-side; IGBT gate driver Number of channels: 1 Topology: single transistor Mounting: SMD Supply voltage: 3.1...17V; 13...35V Output current: -6...6A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 1EDI3033ASXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,gate driver; PG-DSO-20; 20A; Ch: 1; MOSFET Type of integrated circuit: driver Operating temperature: -40...150°C Integrated circuit features: MOSFET Application: automotive industry Case: PG-DSO-20 Kind of integrated circuit: gate driver; high-side Number of channels: 1 Mounting: SMD Output current: 20A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
|
|
1EDI10I12MFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A Type of integrated circuit: driver Integrated circuit features: active Miller clamp; galvanically isolated Technology: EiceDRIVER™ Voltage class: 1.2kV Kind of package: reel; tape Case: PG-DSO-8 Kind of integrated circuit: high-side; IGBT gate driver Number of channels: 1 Topology: single transistor Mounting: SMD Supply voltage: 3.1...17V; 13...35V Output current: -1...1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 1EDI2010ASXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; SPI Type of integrated circuit: driver Integrated circuit features: galvanically isolated Technology: EiceDRIVER™ Voltage class: 1.2kV Kind of package: reel; tape Case: PG-DSO-36 Interface: SPI Kind of integrated circuit: high-side; IGBT gate driver Number of channels: 1 Topology: single transistor Mounting: SMD Supply voltage: 4.65...5.5V; 13...18V Output current: -1...1A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
|
|
1EDI20I12AFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A Type of integrated circuit: driver Integrated circuit features: galvanically isolated Technology: EiceDRIVER™ Voltage class: 1.2kV Kind of package: reel; tape Case: PG-DSO-8 Kind of integrated circuit: high-side; IGBT gate driver Number of channels: 1 Topology: single transistor Mounting: SMD Supply voltage: 3.1...17V; 13...35V Output current: -2...2A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
1EDI20I12MFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A Type of integrated circuit: driver Integrated circuit features: active Miller clamp; galvanically isolated Technology: EiceDRIVER™ Voltage class: 1.2kV Kind of package: reel; tape Case: PG-DSO-8 Kind of integrated circuit: high-side; IGBT gate driver Number of channels: 1 Topology: single transistor Mounting: SMD Supply voltage: 3.1...17V; 13...35V Output current: -2...2A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 1EDI3020ASXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side; PG-DSO-20; 20A; Ch: 1 Type of integrated circuit: driver Operating temperature: -40...150°C Application: automotive industry Case: PG-DSO-20 Kind of integrated circuit: high-side Number of channels: 1 Mounting: SMD Output current: 20A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 1EDI3030ASXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side; PG-DSO-20; 20A; Ch: 1 Type of integrated circuit: driver Operating temperature: -40...150°C Application: automotive industry Case: PG-DSO-20 Kind of integrated circuit: high-side Number of channels: 1 Mounting: SMD Output current: 20A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
|
|
1EDI30I12MFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A Type of integrated circuit: driver Integrated circuit features: active Miller clamp; galvanically isolated Technology: EiceDRIVER™ Voltage class: 1.2kV Kind of package: reel; tape Case: PG-DSO-8 Kind of integrated circuit: high-side; IGBT gate driver Number of channels: 1 Topology: single transistor Mounting: SMD Supply voltage: 3.1...17V; 13...35V Output current: -3...3A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| ISC019N04NM5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 170A; 100W; PG-TDSON-8 FL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 170A Power dissipation: 100W Case: PG-TDSON-8 FL On-state resistance: 1.9mΩ Mounting: SMD Gate charge: 42nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| ISC058N04NM5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 40V; 63A; 42W; PG-TDSON-8 FL Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 40V Drain current: 63A Power dissipation: 42W Case: PG-TDSON-8 FL On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 16nC Kind of channel: enhancement Gate-source voltage: 20V |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IPB320P10LMATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -63A; 300W; D2PAK,TO263 Polarisation: unipolar Type of transistor: P-MOSFET Mounting: SMD Drain-source voltage: -100V Drain current: -63A Gate charge: 219nC On-state resistance: 32mΩ Power dissipation: 300W Case: D2PAK; TO263 Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
IPB320N20N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO263-3 Polarisation: unipolar Type of transistor: N-MOSFET Mounting: SMD Drain-source voltage: 200V Drain current: 34A On-state resistance: 32mΩ Gate-source voltage: ±20V Power dissipation: 136W Technology: OptiMOS™ 3 Case: PG-TO263-3 Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
BSC032NE2LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 84A; 37W; PG-TDSON-8 Polarisation: unipolar Type of transistor: N-MOSFET Mounting: SMD Drain-source voltage: 25V Drain current: 84A On-state resistance: 3.2mΩ Gate-source voltage: ±20V Power dissipation: 37W Technology: OptiMOS™ Case: PG-TDSON-8 Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
BSC320N20NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 36A; 125W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 200V Drain current: 36A Power dissipation: 125W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IAUC120N06S5L032ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 21A Power dissipation: 94W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 4.4mΩ Mounting: SMD Gate charge: 51.5nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 364A Technology: OptiMOS™ 5 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPD320N20N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 200V; 34A; 136W; PG-TO252-3 Polarisation: N Type of transistor: N-MOSFET Mounting: SMD Drain-source voltage: 200V Drain current: 34A Gate charge: 29nC Gate-source voltage: 20V Power dissipation: 136W Technology: MOSFET Case: PG-TO252-3 Kind of channel: enhancement |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
XMC4700E196F1536AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH Type of integrated circuit: ARM microcontroller Operating temperature: -40...85°C Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Kind of architecture: Cortex M4 Kind of core: 32-bit Memory: 276kB SRAM; 1.5MB FLASH Case: PG-LFBGA-196 Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Family: XMC4700 Supply voltage: 3.3V DC Number of A/D channels: 26 Number of inputs/outputs: 155 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
XMC4800E196F1536AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH Type of integrated circuit: ARM microcontroller Operating temperature: -40...85°C Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Kind of architecture: Cortex M4 Kind of core: 32-bit Memory: 276kB SRAM; 1.5MB FLASH Case: PG-LFBGA-196 Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Family: XMC4800 Supply voltage: 3.3V DC Number of A/D channels: 26 Number of inputs/outputs: 155 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
XMC4800E196K1536AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH Type of integrated circuit: ARM microcontroller Operating temperature: -40...125°C Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Kind of architecture: Cortex M4 Kind of core: 32-bit Memory: 276kB SRAM; 1.5MB FLASH Case: PG-LFBGA-196 Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Family: XMC4800 Supply voltage: 3.3V DC Number of A/D channels: 26 Number of inputs/outputs: 155 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 160 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
2ED2184S06FXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2 Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: PG-DSO-8 Output current: -2.5...2.5A Number of channels: 2 Supply voltage: 10...20V Mounting: SMD Kind of package: reel; tape Voltage class: 650V Protection: undervoltage UVP Integrated circuit features: integrated bootstrap functionality |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2ED21844S06JXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2 Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: PG-DSO-14 Output current: -2.5...2.5A Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Number of channels: 2 Supply voltage: 10...20V Protection: undervoltage UVP Voltage class: 650V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| S29JL032J70TFI420 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; TSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 32Mb FLASH
Kind of interface: parallel
Case: TSOP48
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; TSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 32Mb FLASH
Kind of interface: parallel
Case: TSOP48
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY9BF416NPMC-G-JNE2 |
|
auf Bestellung 2060 Stücke:
Lieferzeit 14-21 Tag (e)
| IMZA65R083M1HXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; 104W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Power dissipation: 104W
Case: TO247-4
On-state resistance: 111mΩ
Mounting: THT
Gate charge: 19nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; 104W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Power dissipation: 104W
Case: TO247-4
On-state resistance: 111mΩ
Mounting: THT
Gate charge: 19nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPZA65R029CFD7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 69A; 305W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 69A
Power dissipation: 305W
Case: TO247-4
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 145nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 69A; 305W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 69A
Power dissipation: 305W
Case: TO247-4
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 145nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| T560N16TOFXPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 809A; 559A; Igt: 200mA
Mounting: Press-Pack
Type of thyristor: hockey-puck
Max. forward impulse current: 8kA
Gate current: 200mA
Features of semiconductor devices: phase control thyristor (PCT)
Max. off-state voltage: 1.6kV
Body dimensions: Ø48/Ø30mm
Load current: 559A
Max. load current: 809A
Kind of package: in-tray
Case: BG-T4814K0-1
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 809A; 559A; Igt: 200mA
Mounting: Press-Pack
Type of thyristor: hockey-puck
Max. forward impulse current: 8kA
Gate current: 200mA
Features of semiconductor devices: phase control thyristor (PCT)
Max. off-state voltage: 1.6kV
Body dimensions: Ø48/Ø30mm
Load current: 559A
Max. load current: 809A
Kind of package: in-tray
Case: BG-T4814K0-1
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
| BSB008NE2LXXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 180A; 89W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
On-state resistance: 0.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Power dissipation: 89W
Drain current: 180A
Case: CanPAK™ MX; MG-WDSON-2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 180A; 89W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
On-state resistance: 0.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Power dissipation: 89W
Drain current: 180A
Case: CanPAK™ MX; MG-WDSON-2
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPTC020N13NM6ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 135V; 297A; 395W; PG-HDSOP-16
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 135V
Drain current: 297A
Power dissipation: 395W
Case: PG-HDSOP-16
Gate-source voltage: 20V
On-state resistance: 1.95mΩ
Mounting: SMD
Gate charge: 159nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 135V; 297A; 395W; PG-HDSOP-16
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 135V
Drain current: 297A
Power dissipation: 395W
Case: PG-HDSOP-16
Gate-source voltage: 20V
On-state resistance: 1.95mΩ
Mounting: SMD
Gate charge: 159nC
Kind of channel: enhancement
auf Bestellung 1800 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFP4768PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Pulsed drain current: 370A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Pulsed drain current: 370A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C3866PVI-021 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: CY8C3866PVI-021
Category: Infineon Technologies microcontrollers
Description: CY8C3866PVI-021
auf Bestellung 407 Stücke:
Lieferzeit 14-21 Tag (e)
| BAT2402ELSE6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAT2402LSE6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IR2118SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2118PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IR2118STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFI4212H-117P |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 11A; 18W; TO220FP-5
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 18W
Case: TO220FP-5
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 11A; 18W; TO220FP-5
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 18W
Case: TO220FP-5
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IAUZ30N10S5L240ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 45.5W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 45.5W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPD130N10NF2SATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; 71W; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Power dissipation: 71W
Case: DPAK3
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 18.6nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; 71W; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Power dissipation: 71W
Case: DPAK3
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 18.6nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ISZ230N10NM6ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 48W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 48W
Case: PG-TDSON-8 FL
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 48W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 48W
Case: PG-TDSON-8 FL
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPD30N10S3L34ATMA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 30A; 57W; DPAK; automotive industry
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 30A; 57W; DPAK; automotive industry
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 25000 Stücke:
Lieferzeit 14-21 Tag (e)
| CY8C4124PVI-442T |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 4kBSRAM,16kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 16kB FLASH
Case: SSOP28
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 24
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 4kBSRAM,16kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 16kB FLASH
Case: SSOP28
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 24
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4014PVI-422 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 16MHz; SSOP28; 2kBSRAM,16kBFLASH
Interface: GPIO; I2C
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 20
Memory: 2kB SRAM; 16kB FLASH
Clock frequency: 16MHz
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
Integrated circuit features: CapSense
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 16MHz; SSOP28; 2kBSRAM,16kBFLASH
Interface: GPIO; I2C
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 20
Memory: 2kB SRAM; 16kB FLASH
Clock frequency: 16MHz
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
Integrated circuit features: CapSense
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4125PVI-482 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: SSOP28
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 24
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: SSOP28
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 24
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2350 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4245PVI-482 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; SSOP28; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 48MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: SSOP28
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 24
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; SSOP28; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 48MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: SSOP28
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 24
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4124PVI-432 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 4kBSRAM,16kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 24
Memory: 4kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
Integrated circuit features: CapSense; LCD controller
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 4kBSRAM,16kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 24
Memory: 4kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
Integrated circuit features: CapSense; LCD controller
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BGSX24MU16E6327XUSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; DP4T; MIPI; ULGA16-1; 1.65÷3.4VDC; 0.1÷5GHz
Type of integrated circuit: RF switch
Mounting: SMD
Case: ULGA16-1
Supply voltage: 1.65...3.4V DC
Interface: MIPI
Bandwidth: 0.1...5GHz
Application: telecommunication
Output configuration: DP4T
Category: Analog multiplexers and switches
Description: IC: RF switch; DP4T; MIPI; ULGA16-1; 1.65÷3.4VDC; 0.1÷5GHz
Type of integrated circuit: RF switch
Mounting: SMD
Case: ULGA16-1
Supply voltage: 1.65...3.4V DC
Interface: MIPI
Bandwidth: 0.1...5GHz
Application: telecommunication
Output configuration: DP4T
Produkt ist nicht verfügbar
Mindestbestellmenge: 4500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BGSX24MU16E6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch
Category: Analog multiplexers and switches
Description: IC: RF switch
auf Bestellung 4500 Stücke:
Lieferzeit 14-21 Tag (e)
| BGSX44MA12E6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch
Type of integrated circuit: RF switch
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: RF switch
Type of integrated circuit: RF switch
Mounting: SMD
auf Bestellung 4500 Stücke:
Lieferzeit 14-21 Tag (e)
| S25FL256SAGMFI011 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 47 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BCR431UXTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: PG-SOT23-6
Output current: 20...100mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 6...42V DC
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: PG-SOT23-6
Output current: 20...100mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 6...42V DC
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| PVT412ASPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; SMT; DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Mounting: SMT
Case: DIP6
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; SMT; DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Mounting: SMT
Case: DIP6
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 870 Stücke:
Lieferzeit 14-21 Tag (e)
| BSR92PH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.11A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -0.11A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 20Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.11A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -0.11A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 20Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSP92PH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.26A; 1.8W; PG-SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -260mA
Kind of channel: enhancement
Drain-source voltage: -250V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT223
On-state resistance: 12Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.26A; 1.8W; PG-SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -260mA
Kind of channel: enhancement
Drain-source voltage: -250V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT223
On-state resistance: 12Ω
auf Bestellung 2243 Stücke:
Lieferzeit 14-21 Tag (e)
| BSS192PH6327FTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89
Case: PG-SOT89
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -0.19A
Kind of channel: enhancement
Drain-source voltage: -250V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Power dissipation: 1W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89
Case: PG-SOT89
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -0.19A
Kind of channel: enhancement
Drain-source voltage: -250V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Power dissipation: 1W
auf Bestellung 3441 Stücke:
Lieferzeit 14-21 Tag (e)
| D1251S45TXPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: hockey-puck rectifying
Type of diode: hockey-puck rectifying
Category: Diodes - others
Description: Diode: hockey-puck rectifying
Type of diode: hockey-puck rectifying
Produkt ist nicht verfügbar
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1EDI05I12AFXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -0.5...0.5A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Mounting: SMD
Kind of package: reel; tape
Voltage class: 1.2kV
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -0.5...0.5A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Mounting: SMD
Kind of package: reel; tape
Voltage class: 1.2kV
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)
| 1EDI60N12AFXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,MOSFET gate driver
Type of integrated circuit: driver
Protection: undervoltage UVP
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Voltage class: 1.2kV
Kind of package: reel; tape
Case: PG-DSO-8
Kind of integrated circuit: high-side; MOSFET gate driver
Number of channels: 1
Topology: single transistor
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Output current: -6...6A
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,MOSFET gate driver
Type of integrated circuit: driver
Protection: undervoltage UVP
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Voltage class: 1.2kV
Kind of package: reel; tape
Case: PG-DSO-8
Kind of integrated circuit: high-side; MOSFET gate driver
Number of channels: 1
Topology: single transistor
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Output current: -6...6A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1EDI20N12AFXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8
Type of integrated circuit: driver
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™; GaN
Voltage class: 1.2kV
Kind of package: reel; tape
Case: PG-DSO-8
Kind of integrated circuit: gate driver; high-side
Number of channels: 1
Topology: single transistor
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Output current: -2...2A
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8
Type of integrated circuit: driver
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™; GaN
Voltage class: 1.2kV
Kind of package: reel; tape
Case: PG-DSO-8
Kind of integrated circuit: gate driver; high-side
Number of channels: 1
Topology: single transistor
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Output current: -2...2A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1EDI40I12AFXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Type of integrated circuit: driver
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Voltage class: 1.2kV
Kind of package: reel; tape
Case: PG-DSO-8
Kind of integrated circuit: high-side; IGBT gate driver
Number of channels: 1
Topology: single transistor
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Output current: -4...4A
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Type of integrated circuit: driver
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Voltage class: 1.2kV
Kind of package: reel; tape
Case: PG-DSO-8
Kind of integrated circuit: high-side; IGBT gate driver
Number of channels: 1
Topology: single transistor
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Output current: -4...4A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1EDI60I12AFXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Voltage class: 1.2kV
Kind of package: reel; tape
Case: PG-DSO-8
Kind of integrated circuit: high-side; IGBT gate driver
Number of channels: 1
Topology: single transistor
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Output current: -6...6A
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Voltage class: 1.2kV
Kind of package: reel; tape
Case: PG-DSO-8
Kind of integrated circuit: high-side; IGBT gate driver
Number of channels: 1
Topology: single transistor
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Output current: -6...6A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1EDI3033ASXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; PG-DSO-20; 20A; Ch: 1; MOSFET
Type of integrated circuit: driver
Operating temperature: -40...150°C
Integrated circuit features: MOSFET
Application: automotive industry
Case: PG-DSO-20
Kind of integrated circuit: gate driver; high-side
Number of channels: 1
Mounting: SMD
Output current: 20A
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; PG-DSO-20; 20A; Ch: 1; MOSFET
Type of integrated circuit: driver
Operating temperature: -40...150°C
Integrated circuit features: MOSFET
Application: automotive industry
Case: PG-DSO-20
Kind of integrated circuit: gate driver; high-side
Number of channels: 1
Mounting: SMD
Output current: 20A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1EDI10I12MFXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Type of integrated circuit: driver
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Voltage class: 1.2kV
Kind of package: reel; tape
Case: PG-DSO-8
Kind of integrated circuit: high-side; IGBT gate driver
Number of channels: 1
Topology: single transistor
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Output current: -1...1A
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Type of integrated circuit: driver
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Voltage class: 1.2kV
Kind of package: reel; tape
Case: PG-DSO-8
Kind of integrated circuit: high-side; IGBT gate driver
Number of channels: 1
Topology: single transistor
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Output current: -1...1A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1EDI2010ASXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; SPI
Type of integrated circuit: driver
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Voltage class: 1.2kV
Kind of package: reel; tape
Case: PG-DSO-36
Interface: SPI
Kind of integrated circuit: high-side; IGBT gate driver
Number of channels: 1
Topology: single transistor
Mounting: SMD
Supply voltage: 4.65...5.5V; 13...18V
Output current: -1...1A
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; SPI
Type of integrated circuit: driver
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Voltage class: 1.2kV
Kind of package: reel; tape
Case: PG-DSO-36
Interface: SPI
Kind of integrated circuit: high-side; IGBT gate driver
Number of channels: 1
Topology: single transistor
Mounting: SMD
Supply voltage: 4.65...5.5V; 13...18V
Output current: -1...1A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1EDI20I12AFXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Voltage class: 1.2kV
Kind of package: reel; tape
Case: PG-DSO-8
Kind of integrated circuit: high-side; IGBT gate driver
Number of channels: 1
Topology: single transistor
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Output current: -2...2A
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Voltage class: 1.2kV
Kind of package: reel; tape
Case: PG-DSO-8
Kind of integrated circuit: high-side; IGBT gate driver
Number of channels: 1
Topology: single transistor
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Output current: -2...2A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1EDI20I12MFXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Voltage class: 1.2kV
Kind of package: reel; tape
Case: PG-DSO-8
Kind of integrated circuit: high-side; IGBT gate driver
Number of channels: 1
Topology: single transistor
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Output current: -2...2A
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Voltage class: 1.2kV
Kind of package: reel; tape
Case: PG-DSO-8
Kind of integrated circuit: high-side; IGBT gate driver
Number of channels: 1
Topology: single transistor
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Output current: -2...2A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1EDI3020ASXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side; PG-DSO-20; 20A; Ch: 1
Type of integrated circuit: driver
Operating temperature: -40...150°C
Application: automotive industry
Case: PG-DSO-20
Kind of integrated circuit: high-side
Number of channels: 1
Mounting: SMD
Output current: 20A
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side; PG-DSO-20; 20A; Ch: 1
Type of integrated circuit: driver
Operating temperature: -40...150°C
Application: automotive industry
Case: PG-DSO-20
Kind of integrated circuit: high-side
Number of channels: 1
Mounting: SMD
Output current: 20A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1EDI3030ASXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side; PG-DSO-20; 20A; Ch: 1
Type of integrated circuit: driver
Operating temperature: -40...150°C
Application: automotive industry
Case: PG-DSO-20
Kind of integrated circuit: high-side
Number of channels: 1
Mounting: SMD
Output current: 20A
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side; PG-DSO-20; 20A; Ch: 1
Type of integrated circuit: driver
Operating temperature: -40...150°C
Application: automotive industry
Case: PG-DSO-20
Kind of integrated circuit: high-side
Number of channels: 1
Mounting: SMD
Output current: 20A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1EDI30I12MFXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Type of integrated circuit: driver
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Voltage class: 1.2kV
Kind of package: reel; tape
Case: PG-DSO-8
Kind of integrated circuit: high-side; IGBT gate driver
Number of channels: 1
Topology: single transistor
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Output current: -3...3A
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Type of integrated circuit: driver
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Voltage class: 1.2kV
Kind of package: reel; tape
Case: PG-DSO-8
Kind of integrated circuit: high-side; IGBT gate driver
Number of channels: 1
Topology: single transistor
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Output current: -3...3A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ISC019N04NM5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 170A; 100W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 170A
Power dissipation: 100W
Case: PG-TDSON-8 FL
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 170A; 100W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 170A
Power dissipation: 100W
Case: PG-TDSON-8 FL
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ISC058N04NM5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 63A; 42W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 63A
Power dissipation: 42W
Case: PG-TDSON-8 FL
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 16nC
Kind of channel: enhancement
Gate-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 63A; 42W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 63A
Power dissipation: 42W
Case: PG-TDSON-8 FL
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 16nC
Kind of channel: enhancement
Gate-source voltage: 20V
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| IPB320P10LMATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -63A; 300W; D2PAK,TO263
Polarisation: unipolar
Type of transistor: P-MOSFET
Mounting: SMD
Drain-source voltage: -100V
Drain current: -63A
Gate charge: 219nC
On-state resistance: 32mΩ
Power dissipation: 300W
Case: D2PAK; TO263
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -63A; 300W; D2PAK,TO263
Polarisation: unipolar
Type of transistor: P-MOSFET
Mounting: SMD
Drain-source voltage: -100V
Drain current: -63A
Gate charge: 219nC
On-state resistance: 32mΩ
Power dissipation: 300W
Case: D2PAK; TO263
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPB320N20N3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO263-3
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 200V
Drain current: 34A
On-state resistance: 32mΩ
Gate-source voltage: ±20V
Power dissipation: 136W
Technology: OptiMOS™ 3
Case: PG-TO263-3
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO263-3
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 200V
Drain current: 34A
On-state resistance: 32mΩ
Gate-source voltage: ±20V
Power dissipation: 136W
Technology: OptiMOS™ 3
Case: PG-TO263-3
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSC032NE2LSATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 84A; 37W; PG-TDSON-8
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 25V
Drain current: 84A
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 37W
Technology: OptiMOS™
Case: PG-TDSON-8
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 84A; 37W; PG-TDSON-8
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 25V
Drain current: 84A
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 37W
Technology: OptiMOS™
Case: PG-TDSON-8
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSC320N20NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 36A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 36A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 36A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 36A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| IAUC120N06S5L032ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 94W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 51.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 364A
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 94W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 51.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 364A
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPD320N20N3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 200V; 34A; 136W; PG-TO252-3
Polarisation: N
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 200V
Drain current: 34A
Gate charge: 29nC
Gate-source voltage: 20V
Power dissipation: 136W
Technology: MOSFET
Case: PG-TO252-3
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 200V; 34A; 136W; PG-TO252-3
Polarisation: N
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 200V
Drain current: 34A
Gate charge: 29nC
Gate-source voltage: 20V
Power dissipation: 136W
Technology: MOSFET
Case: PG-TO252-3
Kind of channel: enhancement
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| XMC4700E196F1536AAXQMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Operating temperature: -40...85°C
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Kind of architecture: Cortex M4
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Case: PG-LFBGA-196
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Family: XMC4700
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Operating temperature: -40...85°C
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Kind of architecture: Cortex M4
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Case: PG-LFBGA-196
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Family: XMC4700
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| XMC4800E196F1536AAXQMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Operating temperature: -40...85°C
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Kind of architecture: Cortex M4
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Case: PG-LFBGA-196
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Family: XMC4800
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Operating temperature: -40...85°C
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Kind of architecture: Cortex M4
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Case: PG-LFBGA-196
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Family: XMC4800
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| XMC4800E196K1536AAXQMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Operating temperature: -40...125°C
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Kind of architecture: Cortex M4
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Case: PG-LFBGA-196
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Family: XMC4800
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Operating temperature: -40...125°C
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Kind of architecture: Cortex M4
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Case: PG-LFBGA-196
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Family: XMC4800
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
Produkt ist nicht verfügbar
Mindestbestellmenge: 160 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2ED2184S06FXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -2.5...2.5A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -2.5...2.5A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2ED21844S06JXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -2.5...2.5A
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Supply voltage: 10...20V
Protection: undervoltage UVP
Voltage class: 650V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -2.5...2.5A
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Supply voltage: 10...20V
Protection: undervoltage UVP
Voltage class: 650V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH