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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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| AIKZH40N120CS7XKSA1 | Infineon Technologies |
Description: 1200 V TRENCHSTOP IGBT 7 TECHNOL |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKZH40N120CS7XKSA1 | Infineon Technologies |
IGBTs 1200 V TRENCHSTOP IGBT 7 technology |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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AU40N120T3A5 | LUXIN-SEMI |
Transistor IGBT ; 1200V; 20V; 80A; 160A; 375W; 4,2V~5,8V; 239nC; -40°C~175°C; Similar to: IKW40N120T2FKSA1; RGS80TSX2DHRC11; AU40N120T3A5 LUXIN-SEMI TAU40n120t3a5Anzahl je Verpackung: 5 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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BGH40N120HS1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Case: TO247-3 Mounting: THT Kind of package: tube Collector current: 40A Features of semiconductor devices: integrated anti-parallel diode Collector-emitter voltage: 1.2kV |
auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
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DACMI40N1200 | DACO Semiconductor |
Category: Transistor modulesDescription: Module; single transistor; 1.2kV; 25A; SOT227B; screw; SiC; screw Polarisation: unipolar Type of semiconductor module: MOSFET transistor Operating temperature: -55...150°C Technology: SiC Drain current: 25A Drain-source voltage: 1.2kV Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Case: SOT227B |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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IGW40N120H3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Power dissipation: 483W Case: TO247-3 Mounting: THT Kind of package: tube Manufacturer series: H3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 40A |
auf Bestellung 259 Stücke: Lieferzeit 14-21 Tag (e) |
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IGW40N120H3FKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 80A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/290ns Switching Energy: 3.16mJ Test Condition: 600V, 40A, 12Ohm, 15V Gate Charge: 185 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 483 W |
auf Bestellung 5988 Stücke: Lieferzeit 10-14 Tag (e) |
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IHW40N120R5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ RC Power dissipation: 197W Case: TO247-3 Mounting: THT Gate charge: 310nC Kind of package: tube Collector-emitter voltage: 1.2kV Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Pulsed collector current: 120A Turn-off time: 440ns Gate-emitter voltage: ±20V Collector current: 40A |
auf Bestellung 212 Stücke: Lieferzeit 14-21 Tag (e) |
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IHW40N120R5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 80A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 40A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/420ns Switching Energy: 1.6mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 310 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 394 W |
auf Bestellung 2131 Stücke: Lieferzeit 10-14 Tag (e) |
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IKQ140N120CH7XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 175A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 144 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 140A Supplier Device Package: PG-TO247-3-U01 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 68ns/541ns Switching Energy: 8.84mJ (on), 3.38mJ (off) Gate Charge: 970 nC Part Status: Active Current - Collector (Ic) (Max): 175 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 560 A Power - Max: 962 W |
auf Bestellung 58 Stücke: Lieferzeit 10-14 Tag (e) |
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IKQ40N120CH3XKSA1 | Infineon Technologies |
Description: IGBT 1200V 80A TO247-3-46Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A Supplier Device Package: PG-TO247-3-46 Td (on/off) @ 25°C: 30ns/300ns Switching Energy: 3.3mJ (on), 1.3mJ (off) Test Condition: 400V, 40A, 12Ohm, 15V Gate Charge: 190 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 500 W |
auf Bestellung 145 Stücke: Lieferzeit 10-14 Tag (e) |
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IKQ40N120CH3XKSA1 | Infineon Technologies |
IGBTs IGBT PRODUCTS |
auf Bestellung 189 Stücke: Lieferzeit 10-14 Tag (e) |
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IKQ40N120CT2XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 2 Power dissipation: 133W Case: TO247-3 Mounting: THT Kind of package: tube Turn-on time: 75ns Turn-off time: 379ns Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 40A Features of semiconductor devices: integrated anti-parallel diode Collector-emitter voltage: 1.2kV |
auf Bestellung 180 Stücke: Lieferzeit 14-21 Tag (e) |
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IKQ40N120CT2XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 80A TO247-3Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A Supplier Device Package: PG-TO247-3-46 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 32ns/328ns Switching Energy: 3.1mJ (on), 2.9mJ (off) Test Condition: 600V, 40A, 12Ohm, 15V Gate Charge: 190 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 500 W |
auf Bestellung 1608 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW40N120CH7XKSA1 | Infineon Technologies |
IGBTs 1200 V, 40 A IGBT with anti-parallel diode in TO-247 3pin package |
auf Bestellung 330 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW40N120CH7XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 82A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 120 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A Supplier Device Package: PG-TO247-3-U06 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 36ns/336ns Switching Energy: 1.69mJ (on), 920µJ (off) Gate Charge: 290 nC Part Status: Active Current - Collector (Ic) (Max): 82 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 330 W |
auf Bestellung 817 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW40N120CS6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 6 Power dissipation: 250W Case: TO247-3 Mounting: THT Gate charge: 285nC Kind of package: tube Collector-emitter voltage: 1.2kV Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 160A Gate-emitter voltage: ±20V Collector current: 40A |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW40N120CS6XKSA1 | Infineon |
IGBT 1200V 40A TO247-3-46 TrenchStop -40+175°C IKW40N120CS6XKSA1 Infineon Technologies TIKW40n120cs6Anzahl je Verpackung: 2 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW40N120CS6XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 80A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 400 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A Supplier Device Package: PG-TO247-3-41 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/315ns Switching Energy: 2.55mJ (on), 1.55mJ (off) Test Condition: 600V, 40A, 9Ohm, 15V Gate Charge: 285 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 500 W |
auf Bestellung 482 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW40N120CS6XKSA1 | Infineon Technologies |
IGBTs INDUSTRY |
auf Bestellung 3850 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW40N120CS7XKSA1 | Infineon Technologies |
IGBTs 1200 V, 40 A IGBT7 S7 with anti-parallel diode in TO-247 package |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW40N120H3 | Infineon |
Transistor IGBT ; 1200V; 20V; 80A; 160A; 483W; 5,0V~6,5V; 185nC; -40°C~175°C; IKW40N120H3 TIKW40n120h3Anzahl je Verpackung: 5 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW40N120H3 | Infineon Technologies |
IGBTs IGBT PRODUCTS |
auf Bestellung 119 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW40N120H3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Power dissipation: 483W Case: TO247-3 Mounting: THT Gate charge: 185nC Kind of package: tube Manufacturer series: H3 Collector-emitter voltage: 1.2kV Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 160A Gate-emitter voltage: ±20V Collector current: 80A |
auf Bestellung 262 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW40N120H3FKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 80A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 355 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/290ns Switching Energy: 4.4mJ Test Condition: 600V, 40A, 12Ohm, 15V Gate Charge: 185 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 483 W |
auf Bestellung 2303 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW40N120H3FKSA1 | Infineon Technologies |
IGBTs IGBT PRODUCTS |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW40N120T2 | Infineon |
Trans IGBT Chip N-CH 1.2KV 75A IKW40N120T2FKSA1 IKW40N120T2 TIKW40n120t2Anzahl je Verpackung: 5 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW40N120T2 | Infineon Technologies |
IGBTs LOW LOSS DuoPack 1200V 40A |
auf Bestellung 630 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW40N120T2FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 480W Case: TO247-3 Mounting: THT Gate charge: 192nC Kind of package: tube Collector-emitter voltage: 1.2kV Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 165A Gate-emitter voltage: ±20V Collector current: 40A |
auf Bestellung 238 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW40N120T2FKSA1 | Infineon Technologies |
IGBTs LOW LOSS DuoPack 1200V 40A |
auf Bestellung 523 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW40N120T2FKSA1 | Infineon Technologies |
Description: IGBT TRENCH 1200V 75A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 258 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Td (on/off) @ 25°C: 33ns/314ns Switching Energy: 5.25mJ Test Condition: 600V, 40A, 12Ohm, 15V Gate Charge: 192 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 480 W |
auf Bestellung 2382 Stücke: Lieferzeit 10-14 Tag (e) |
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IKY140N120CH7XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 232A TO247Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 101 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 140A Supplier Device Package: PG-TO247-4-U10 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 50ns/407ns Switching Energy: 2.64mJ (on), 3.9mJ (off) Gate Charge: 1032 nC Part Status: Active Current - Collector (Ic) (Max): 232 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 560 A Power - Max: 962 W |
auf Bestellung 151 Stücke: Lieferzeit 10-14 Tag (e) |
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IKY140N120CH7XKSA1 | Infineon Technologies |
IGBTs 1200 V, 140 A IGBT with anti-parallel diode in TO-247PLUS 4pin package |
auf Bestellung 747 Stücke: Lieferzeit 10-14 Tag (e) |
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IKY40N120CH3XKSA1 | Infineon Technologies |
IGBTs INDUSTRY |
auf Bestellung 135 Stücke: Lieferzeit 10-14 Tag (e) |
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IKY40N120CH3XKSA1 | Infineon Technologies |
Description: IGBT 1200V 80A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 350 ns Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A Supplier Device Package: PG-TO247-4 Td (on/off) @ 25°C: 30ns/280ns Switching Energy: 2.18mJ (on), 1.3mJ (off) Test Condition: 600V, 40A, 12Ohm, 15V Gate Charge: 190 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 500 W |
auf Bestellung 146 Stücke: Lieferzeit 10-14 Tag (e) |
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IKZA40N120CH7XKSA1 | Infineon Technologies |
IGBTs 1200 V, 40 A IGBT with anti-parallel diode in TO-247 4pin package |
auf Bestellung 187 Stücke: Lieferzeit 10-14 Tag (e) |
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IKZA40N120CH7XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 95A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A Supplier Device Package: PG-TO247-4-U02 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 34ns/360ns Switching Energy: 970µJ (on), 1.01mJ (off) Gate Charge: 290 nC Part Status: Active Current - Collector (Ic) (Max): 95 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 330 W |
auf Bestellung 156 Stücke: Lieferzeit 10-14 Tag (e) |
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IRG8P40N120KD-EPBF | International Rectifier |
Description: IGBT 1200V 60A TO-247ADPackaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 80 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 40ns/245ns Switching Energy: 1.6mJ (on), 1.8mJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 240 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 305 W |
auf Bestellung 10475 Stücke: Lieferzeit 10-14 Tag (e) |
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IRG8P40N120KDPBF | International Rectifier |
Description: IGBT 1200V 60A TO-247ACPackaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 80 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 40ns/245ns Switching Energy: 1.6mJ (on), 1.8mJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 240 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 305 W |
auf Bestellung 8036 Stücke: Lieferzeit 10-14 Tag (e) |
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IXGH40N120A2 | IXYS |
IGBTs SGL IGBT 1200V, 80A |
auf Bestellung 79 Stücke: Lieferzeit 10-14 Tag (e) |
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IXGH40N120B2D1 | IXYS |
IGBTs IGBT, Diode 1200V, 75A |
auf Bestellung 56 Stücke: Lieferzeit 10-14 Tag (e) |
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IXGH40N120C3D1 | IXYS |
IGBTs 75Amps 1200V |
auf Bestellung 270 Stücke: Lieferzeit 10-14 Tag (e) |
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IXGH40N120C3D1 | IXYS |
Description: IGBT PT 1200V 75A TO-247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 17ns/130ns Switching Energy: 1.8mJ (on), 550µJ (off) Test Condition: 600V, 30A, 3Ohm, 15V Gate Charge: 142 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 180 A Power - Max: 380 W |
auf Bestellung 861 Stücke: Lieferzeit 10-14 Tag (e) |
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IXSA40N120L2-7TR | IXYS |
SiC MOSFETs 1200V 80mohm (40A a. 25C) SiC MOSFET in TO267-7L |
auf Bestellung 790 Stücke: Lieferzeit 10-14 Tag (e) |
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IXSA40N120L2-7TR | IXYS |
Description: 1200V 80m (40A @ 25C) SiC MOSFPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 5mA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): 18V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 800 V |
auf Bestellung 797 Stücke: Lieferzeit 10-14 Tag (e) |
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IXSH40N120L2KHV | IXYS |
Description: 1200V 80M (40A @ 25C) SIC MOSFETPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 5mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 800 V |
auf Bestellung 435 Stücke: Lieferzeit 10-14 Tag (e) |
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IXSH40N120L2KHV | IXYS |
SiC MOSFETs 1200V 80mohm (40A a. 25C) SiC MOSFET in TO247-4L |
auf Bestellung 394 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYH40N120B3D1 | IXYS |
IGBTs TO247 1200V 40A GENX3 |
auf Bestellung 192 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYH40N120B3D1 | IXYS |
Description: IGBT 1200V 86A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A Supplier Device Package: TO-247 (IXYH) Td (on/off) @ 25°C: 22ns/177ns Switching Energy: 2.7mJ (on), 1.6mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 87 nC Part Status: Active Current - Collector (Ic) (Max): 86 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 180 A Power - Max: 480 W |
auf Bestellung 1449 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYH40N120B4H1 | IXYS |
Description: IGBT TRENCH 1200V 112A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 430 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 32A Supplier Device Package: TO-247 (IXTH) IGBT Type: Trench Td (on/off) @ 25°C: 19ns/220ns Switching Energy: 5.9mJ (on), 2.9mJ (off) Test Condition: 960V, 32A, 5Ohm, 15V Gate Charge: 94 nC Current - Collector (Ic) (Max): 112 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 240 A Power - Max: 600 W |
auf Bestellung 274 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYH40N120B4H1 | IXYS |
IGBTs IXYH40N120B4H1 |
auf Bestellung 341 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYH40N120C3 | IXYS |
IGBTs GenX3 1200V XPT IGBT |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYH40N120C3 | IXYS |
Description: IGBT 1200V 70A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 24ns/125ns Switching Energy: 3.9mJ (on), 660µJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 85 nC Part Status: Active Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 115 A Power - Max: 577 W |
auf Bestellung 152 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYH40N120C3D1 | IXYS |
IGBTs XPT 1200V IGBT GenX5 XPT IGBT |
auf Bestellung 273 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYH40N120C3D1 | IXYS |
Description: IGBT 1200V 64A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 195 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 24ns/125ns Switching Energy: 3.9mJ (on), 660µJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 85 nC Part Status: Active Current - Collector (Ic) (Max): 64 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 105 A Power - Max: 480 W |
auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYH40N120C4H1 | IXYS |
IGBTs IXYH40N120C4H1 |
auf Bestellung 363 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYH40N120C4H1 | IXYS |
Description: IGBT TRENCH 1200V 110A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 380 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A Supplier Device Package: TO-247 (IXYH) IGBT Type: Trench Td (on/off) @ 25°C: 21ns/140ns Switching Energy: 5.55mJ (on), 1.55mJ (off) Test Condition: 960V, 32A, 5Ohm, 15V Gate Charge: 92 nC Current - Collector (Ic) (Max): 110 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 230 A Power - Max: 680 W |
auf Bestellung 219 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYK140N120A4 | IXYS |
Description: IGBT PT 1200V 480A TO-264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 47 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A Supplier Device Package: TO-264 (IXYK) IGBT Type: PT Td (on/off) @ 25°C: 52ns/590ns Switching Energy: 4.9mJ (on), 12mJ (off) Test Condition: 600V, 70A, 1.5Ohm, 15V Gate Charge: 420 nC Part Status: Active Current - Collector (Ic) (Max): 480 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 1200 A Power - Max: 1500 W |
auf Bestellung 419 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYK140N120A4 | IXYS |
IGBTs Disc IGBT XPT Gen4 1200V 140A TO264 |
auf Bestellung 2820 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYN140N120A4 | IXYS |
Description: IGBT MODULE 1200V 380A SOT-227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 380 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1070 W Current - Collector Cutoff (Max): 25 µA Input Capacitance (Cies) @ Vce: 8.3 nF @ 25 V |
auf Bestellung 143 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIKZH40N120CS7XKSA1 |
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Hersteller: Infineon Technologies
Description: 1200 V TRENCHSTOP IGBT 7 TECHNOL
Description: 1200 V TRENCHSTOP IGBT 7 TECHNOL
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.86 EUR |
| 10+ | 9.9 EUR |
| 25+ | 9.16 EUR |
| 240+ | 7.98 EUR |
| 480+ | 7.75 EUR |
| 720+ | 7.63 EUR |
| AIKZH40N120CS7XKSA1 |
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Hersteller: Infineon Technologies
IGBTs 1200 V TRENCHSTOP IGBT 7 technology
IGBTs 1200 V TRENCHSTOP IGBT 7 technology
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 16.61 EUR |
| 10+ | 11.69 EUR |
| 100+ | 9.47 EUR |
| 480+ | 8.4 EUR |
| 1200+ | 7.14 EUR |
| 2640+ | 6.75 EUR |
| AU40N120T3A5 |
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Hersteller: LUXIN-SEMI
Transistor IGBT ; 1200V; 20V; 80A; 160A; 375W; 4,2V~5,8V; 239nC; -40°C~175°C; Similar to: IKW40N120T2FKSA1; RGS80TSX2DHRC11; AU40N120T3A5 LUXIN-SEMI TAU40n120t3a5
Anzahl je Verpackung: 5 Stücke
Transistor IGBT ; 1200V; 20V; 80A; 160A; 375W; 4,2V~5,8V; 239nC; -40°C~175°C; Similar to: IKW40N120T2FKSA1; RGS80TSX2DHRC11; AU40N120T3A5 LUXIN-SEMI TAU40n120t3a5
Anzahl je Verpackung: 5 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 8.97 EUR |
| BGH40N120HS1 |
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 13.46 EUR |
| 8+ | 12.14 EUR |
| 10+ | 10.72 EUR |
| 30+ | 9.63 EUR |
| DACMI40N1200 |
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Hersteller: DACO Semiconductor
Category: Transistor modules
Description: Module; single transistor; 1.2kV; 25A; SOT227B; screw; SiC; screw
Polarisation: unipolar
Type of semiconductor module: MOSFET transistor
Operating temperature: -55...150°C
Technology: SiC
Drain current: 25A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Case: SOT227B
Category: Transistor modules
Description: Module; single transistor; 1.2kV; 25A; SOT227B; screw; SiC; screw
Polarisation: unipolar
Type of semiconductor module: MOSFET transistor
Operating temperature: -55...150°C
Technology: SiC
Drain current: 25A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Case: SOT227B
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 54.18 EUR |
| 3+ | 45.86 EUR |
| IGW40N120H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
auf Bestellung 259 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 6.81 EUR |
| 14+ | 6.2 EUR |
| IGW40N120H3FKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/290ns
Switching Energy: 3.16mJ
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 185 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 483 W
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/290ns
Switching Energy: 3.16mJ
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 185 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 483 W
auf Bestellung 5988 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.63 EUR |
| 30+ | 6.58 EUR |
| 120+ | 5.47 EUR |
| 510+ | 4.66 EUR |
| 1020+ | 4.37 EUR |
| 2010+ | 4.26 EUR |
| IHW40N120R5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Pulsed collector current: 120A
Turn-off time: 440ns
Gate-emitter voltage: ±20V
Collector current: 40A
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Pulsed collector current: 120A
Turn-off time: 440ns
Gate-emitter voltage: ±20V
Collector current: 40A
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 5.33 EUR |
| 20+ | 4.4 EUR |
| 22+ | 4.01 EUR |
| 30+ | 3.77 EUR |
| 60+ | 3.45 EUR |
| 120+ | 3.2 EUR |
| IHW40N120R5XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/420ns
Switching Energy: 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 394 W
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/420ns
Switching Energy: 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 394 W
auf Bestellung 2131 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.03 EUR |
| 30+ | 5.63 EUR |
| 120+ | 4.65 EUR |
| 510+ | 3.94 EUR |
| 1020+ | 3.69 EUR |
| 2010+ | 3.51 EUR |
| IKQ140N120CH7XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 175A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 144 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 140A
Supplier Device Package: PG-TO247-3-U01
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 68ns/541ns
Switching Energy: 8.84mJ (on), 3.38mJ (off)
Gate Charge: 970 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 560 A
Power - Max: 962 W
Description: IGBT TRENCH FS 1200V 175A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 144 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 140A
Supplier Device Package: PG-TO247-3-U01
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 68ns/541ns
Switching Energy: 8.84mJ (on), 3.38mJ (off)
Gate Charge: 970 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 560 A
Power - Max: 962 W
auf Bestellung 58 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.79 EUR |
| 30+ | 15.62 EUR |
| IKQ40N120CH3XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT 1200V 80A TO247-3-46
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Supplier Device Package: PG-TO247-3-46
Td (on/off) @ 25°C: 30ns/300ns
Switching Energy: 3.3mJ (on), 1.3mJ (off)
Test Condition: 400V, 40A, 12Ohm, 15V
Gate Charge: 190 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
Description: IGBT 1200V 80A TO247-3-46
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Supplier Device Package: PG-TO247-3-46
Td (on/off) @ 25°C: 30ns/300ns
Switching Energy: 3.3mJ (on), 1.3mJ (off)
Test Condition: 400V, 40A, 12Ohm, 15V
Gate Charge: 190 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
auf Bestellung 145 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.66 EUR |
| 30+ | 10.35 EUR |
| 120+ | 8.76 EUR |
| IKQ40N120CH3XKSA1 |
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Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS
IGBTs IGBT PRODUCTS
auf Bestellung 189 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 18.71 EUR |
| 10+ | 13.2 EUR |
| 100+ | 11 EUR |
| 480+ | 9.81 EUR |
| 1200+ | 9.17 EUR |
| IKQ40N120CT2XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Power dissipation: 133W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 379ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Power dissipation: 133W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 379ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 8.07 EUR |
| 12+ | 7.29 EUR |
| 30+ | 6.6 EUR |
| IKQ40N120CT2XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/328ns
Switching Energy: 3.1mJ (on), 2.9mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/328ns
Switching Energy: 3.1mJ (on), 2.9mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
auf Bestellung 1608 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 60+ | 9.13 EUR |
| IKW40N120CH7XKSA1 |
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Hersteller: Infineon Technologies
IGBTs 1200 V, 40 A IGBT with anti-parallel diode in TO-247 3pin package
IGBTs 1200 V, 40 A IGBT with anti-parallel diode in TO-247 3pin package
auf Bestellung 330 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.54 EUR |
| 10+ | 8.43 EUR |
| 100+ | 6.76 EUR |
| 480+ | 5.99 EUR |
| 1200+ | 5.37 EUR |
| IKW40N120CH7XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 82A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-U06
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/336ns
Switching Energy: 1.69mJ (on), 920µJ (off)
Gate Charge: 290 nC
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 330 W
Description: IGBT TRENCH FS 1200V 82A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-U06
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/336ns
Switching Energy: 1.69mJ (on), 920µJ (off)
Gate Charge: 290 nC
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 330 W
auf Bestellung 817 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.57 EUR |
| 30+ | 7.16 EUR |
| 120+ | 5.97 EUR |
| 510+ | 5.11 EUR |
| IKW40N120CS6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 160A
Gate-emitter voltage: ±20V
Collector current: 40A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 160A
Gate-emitter voltage: ±20V
Collector current: 40A
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 8.04 EUR |
| 13+ | 6.81 EUR |
| 15+ | 5.75 EUR |
| 30+ | 5.18 EUR |
| IKW40N120CS6XKSA1 |
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Hersteller: Infineon
IGBT 1200V 40A TO247-3-46 TrenchStop -40+175°C IKW40N120CS6XKSA1 Infineon Technologies TIKW40n120cs6
Anzahl je Verpackung: 2 Stücke
IGBT 1200V 40A TO247-3-46 TrenchStop -40+175°C IKW40N120CS6XKSA1 Infineon Technologies TIKW40n120cs6
Anzahl je Verpackung: 2 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.6 EUR |
| IKW40N120CS6XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 400 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/315ns
Switching Energy: 2.55mJ (on), 1.55mJ (off)
Test Condition: 600V, 40A, 9Ohm, 15V
Gate Charge: 285 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 400 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/315ns
Switching Energy: 2.55mJ (on), 1.55mJ (off)
Test Condition: 600V, 40A, 9Ohm, 15V
Gate Charge: 285 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
auf Bestellung 482 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.65 EUR |
| 30+ | 6.63 EUR |
| 120+ | 5.53 EUR |
| IKW40N120CS6XKSA1 |
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Hersteller: Infineon Technologies
IGBTs INDUSTRY
IGBTs INDUSTRY
auf Bestellung 3850 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.29 EUR |
| 10+ | 7.69 EUR |
| 100+ | 5.95 EUR |
| 480+ | 5.46 EUR |
| 1200+ | 5.24 EUR |
| IKW40N120CS7XKSA1 |
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Hersteller: Infineon Technologies
IGBTs 1200 V, 40 A IGBT7 S7 with anti-parallel diode in TO-247 package
IGBTs 1200 V, 40 A IGBT7 S7 with anti-parallel diode in TO-247 package
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.83 EUR |
| 10+ | 9.23 EUR |
| 100+ | 7.44 EUR |
| 480+ | 6.59 EUR |
| 1200+ | 5.9 EUR |
| IKW40N120H3 |
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Hersteller: Infineon
Transistor IGBT ; 1200V; 20V; 80A; 160A; 483W; 5,0V~6,5V; 185nC; -40°C~175°C; IKW40N120H3 TIKW40n120h3
Anzahl je Verpackung: 5 Stücke
Transistor IGBT ; 1200V; 20V; 80A; 160A; 483W; 5,0V~6,5V; 185nC; -40°C~175°C; IKW40N120H3 TIKW40n120h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 13.88 EUR |
| IKW40N120H3 |
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Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS
IGBTs IGBT PRODUCTS
auf Bestellung 119 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 14.77 EUR |
| 10+ | 10.41 EUR |
| 100+ | 8.43 EUR |
| 480+ | 7.47 EUR |
| 1200+ | 6.7 EUR |
| IKW40N120H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 160A
Gate-emitter voltage: ±20V
Collector current: 80A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 160A
Gate-emitter voltage: ±20V
Collector current: 80A
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 8.97 EUR |
| 13+ | 7 EUR |
| 14+ | 6.28 EUR |
| 30+ | 5.81 EUR |
| IKW40N120H3FKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 355 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/290ns
Switching Energy: 4.4mJ
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 185 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 483 W
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 355 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/290ns
Switching Energy: 4.4mJ
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 185 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 483 W
auf Bestellung 2303 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.46 EUR |
| 30+ | 8.97 EUR |
| 120+ | 7.54 EUR |
| 510+ | 6.5 EUR |
| 1020+ | 6.24 EUR |
| IKW40N120H3FKSA1 |
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Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS
IGBTs IGBT PRODUCTS
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 14.77 EUR |
| 10+ | 10.41 EUR |
| IKW40N120T2 |
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Hersteller: Infineon
Trans IGBT Chip N-CH 1.2KV 75A IKW40N120T2FKSA1 IKW40N120T2 TIKW40n120t2
Anzahl je Verpackung: 5 Stücke
Trans IGBT Chip N-CH 1.2KV 75A IKW40N120T2FKSA1 IKW40N120T2 TIKW40n120t2
Anzahl je Verpackung: 5 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 27.37 EUR |
| IKW40N120T2 |
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Hersteller: Infineon Technologies
IGBTs LOW LOSS DuoPack 1200V 40A
IGBTs LOW LOSS DuoPack 1200V 40A
auf Bestellung 630 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 16.54 EUR |
| 10+ | 11.3 EUR |
| 100+ | 9.32 EUR |
| 480+ | 8.29 EUR |
| 1200+ | 7.85 EUR |
| IKW40N120T2FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 165A
Gate-emitter voltage: ±20V
Collector current: 40A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 165A
Gate-emitter voltage: ±20V
Collector current: 40A
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 9.72 EUR |
| 10+ | 8.68 EUR |
| 11+ | 7.91 EUR |
| IKW40N120T2FKSA1 |
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Hersteller: Infineon Technologies
IGBTs LOW LOSS DuoPack 1200V 40A
IGBTs LOW LOSS DuoPack 1200V 40A
auf Bestellung 523 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 16.54 EUR |
| 10+ | 11.3 EUR |
| 100+ | 9.32 EUR |
| 480+ | 8.29 EUR |
| 1200+ | 7.85 EUR |
| IKW40N120T2FKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH 1200V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 258 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: 33ns/314ns
Switching Energy: 5.25mJ
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 192 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 480 W
Description: IGBT TRENCH 1200V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 258 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: 33ns/314ns
Switching Energy: 5.25mJ
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 192 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 480 W
auf Bestellung 2382 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.33 EUR |
| 30+ | 10.14 EUR |
| 120+ | 8.57 EUR |
| 510+ | 7.41 EUR |
| 1020+ | 7.25 EUR |
| IKY140N120CH7XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 232A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 140A
Supplier Device Package: PG-TO247-4-U10
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/407ns
Switching Energy: 2.64mJ (on), 3.9mJ (off)
Gate Charge: 1032 nC
Part Status: Active
Current - Collector (Ic) (Max): 232 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 560 A
Power - Max: 962 W
Description: IGBT TRENCH FS 1200V 232A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 140A
Supplier Device Package: PG-TO247-4-U10
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/407ns
Switching Energy: 2.64mJ (on), 3.9mJ (off)
Gate Charge: 1032 nC
Part Status: Active
Current - Collector (Ic) (Max): 232 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 560 A
Power - Max: 962 W
auf Bestellung 151 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.88 EUR |
| 30+ | 15.03 EUR |
| 120+ | 12.88 EUR |
| IKY140N120CH7XKSA1 |
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Hersteller: Infineon Technologies
IGBTs 1200 V, 140 A IGBT with anti-parallel diode in TO-247PLUS 4pin package
IGBTs 1200 V, 140 A IGBT with anti-parallel diode in TO-247PLUS 4pin package
auf Bestellung 747 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 28.99 EUR |
| 10+ | 22.07 EUR |
| 100+ | 18.39 EUR |
| 480+ | 16.4 EUR |
| 1200+ | 15.33 EUR |
| IKY40N120CH3XKSA1 |
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Hersteller: Infineon Technologies
IGBTs INDUSTRY
IGBTs INDUSTRY
auf Bestellung 135 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 16.51 EUR |
| 10+ | 11.63 EUR |
| 100+ | 9.4 EUR |
| 480+ | 8.35 EUR |
| 1200+ | 7.39 EUR |
| IKY40N120CH3XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT 1200V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Supplier Device Package: PG-TO247-4
Td (on/off) @ 25°C: 30ns/280ns
Switching Energy: 2.18mJ (on), 1.3mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 190 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
Description: IGBT 1200V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Supplier Device Package: PG-TO247-4
Td (on/off) @ 25°C: 30ns/280ns
Switching Energy: 2.18mJ (on), 1.3mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 190 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
auf Bestellung 146 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.47 EUR |
| 30+ | 10.25 EUR |
| 120+ | 8.65 EUR |
| IKZA40N120CH7XKSA1 |
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Hersteller: Infineon Technologies
IGBTs 1200 V, 40 A IGBT with anti-parallel diode in TO-247 4pin package
IGBTs 1200 V, 40 A IGBT with anti-parallel diode in TO-247 4pin package
auf Bestellung 187 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 14.47 EUR |
| 10+ | 9.7 EUR |
| 100+ | 7.79 EUR |
| 480+ | 6.91 EUR |
| 1200+ | 6.14 EUR |
| IKZA40N120CH7XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 95A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-4-U02
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/360ns
Switching Energy: 970µJ (on), 1.01mJ (off)
Gate Charge: 290 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 330 W
Description: IGBT TRENCH FS 1200V 95A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-4-U02
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/360ns
Switching Energy: 970µJ (on), 1.01mJ (off)
Gate Charge: 290 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 330 W
auf Bestellung 156 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.2 EUR |
| 30+ | 8.18 EUR |
| 120+ | 6.85 EUR |
| IRG8P40N120KD-EPBF |
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Hersteller: International Rectifier
Description: IGBT 1200V 60A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/245ns
Switching Energy: 1.6mJ (on), 1.8mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 240 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 305 W
Description: IGBT 1200V 60A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/245ns
Switching Energy: 1.6mJ (on), 1.8mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 240 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 305 W
auf Bestellung 10475 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 48+ | 11.38 EUR |
| IRG8P40N120KDPBF |
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Hersteller: International Rectifier
Description: IGBT 1200V 60A TO-247AC
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 40ns/245ns
Switching Energy: 1.6mJ (on), 1.8mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 240 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 305 W
Description: IGBT 1200V 60A TO-247AC
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 40ns/245ns
Switching Energy: 1.6mJ (on), 1.8mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 240 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 305 W
auf Bestellung 8036 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 51+ | 10.73 EUR |
| IXGH40N120A2 |
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Hersteller: IXYS
IGBTs SGL IGBT 1200V, 80A
IGBTs SGL IGBT 1200V, 80A
auf Bestellung 79 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 40.57 EUR |
| 10+ | 26.13 EUR |
| 120+ | 24.34 EUR |
| 510+ | 24.15 EUR |
| IXGH40N120B2D1 |
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Hersteller: IXYS
IGBTs IGBT, Diode 1200V, 75A
IGBTs IGBT, Diode 1200V, 75A
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 39.94 EUR |
| 10+ | 28.33 EUR |
| 120+ | 23.2 EUR |
| IXGH40N120C3D1 |
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Hersteller: IXYS
IGBTs 75Amps 1200V
IGBTs 75Amps 1200V
auf Bestellung 270 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 37.91 EUR |
| 10+ | 23.81 EUR |
| 120+ | 23.43 EUR |
| IXGH40N120C3D1 |
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Hersteller: IXYS
Description: IGBT PT 1200V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/130ns
Switching Energy: 1.8mJ (on), 550µJ (off)
Test Condition: 600V, 30A, 3Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 380 W
Description: IGBT PT 1200V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/130ns
Switching Energy: 1.8mJ (on), 550µJ (off)
Test Condition: 600V, 30A, 3Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 380 W
auf Bestellung 861 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 38.64 EUR |
| 30+ | 24.26 EUR |
| 120+ | 21.12 EUR |
| 510+ | 20.55 EUR |
| IXSA40N120L2-7TR |
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Hersteller: IXYS
SiC MOSFETs 1200V 80mohm (40A a. 25C) SiC MOSFET in TO267-7L
SiC MOSFETs 1200V 80mohm (40A a. 25C) SiC MOSFET in TO267-7L
auf Bestellung 790 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 17.53 EUR |
| 10+ | 12.02 EUR |
| 100+ | 9.07 EUR |
| 500+ | 8.59 EUR |
| IXSA40N120L2-7TR |
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Hersteller: IXYS
Description: 1200V 80m (40A @ 25C) SiC MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 800 V
Description: 1200V 80m (40A @ 25C) SiC MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 800 V
auf Bestellung 797 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.86 EUR |
| 10+ | 12.23 EUR |
| 100+ | 9.23 EUR |
| IXSH40N120L2KHV |
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Hersteller: IXYS
Description: 1200V 80M (40A @ 25C) SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 800 V
Description: 1200V 80M (40A @ 25C) SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 800 V
auf Bestellung 435 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.18 EUR |
| 10+ | 12.46 EUR |
| IXSH40N120L2KHV |
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Hersteller: IXYS
SiC MOSFETs 1200V 80mohm (40A a. 25C) SiC MOSFET in TO247-4L
SiC MOSFETs 1200V 80mohm (40A a. 25C) SiC MOSFET in TO247-4L
auf Bestellung 394 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 17.83 EUR |
| 10+ | 11.98 EUR |
| 120+ | 8.84 EUR |
| IXYH40N120B3D1 |
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Hersteller: IXYS
IGBTs TO247 1200V 40A GENX3
IGBTs TO247 1200V 40A GENX3
auf Bestellung 192 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.92 EUR |
| 10+ | 16.23 EUR |
| 120+ | 14.89 EUR |
| IXYH40N120B3D1 |
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Hersteller: IXYS
Description: IGBT 1200V 86A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 22ns/177ns
Switching Energy: 2.7mJ (on), 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 480 W
Description: IGBT 1200V 86A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 22ns/177ns
Switching Energy: 2.7mJ (on), 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 480 W
auf Bestellung 1449 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 27.14 EUR |
| 30+ | 16.53 EUR |
| 120+ | 14.21 EUR |
| 510+ | 13.05 EUR |
| IXYH40N120B4H1 |
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Hersteller: IXYS
Description: IGBT TRENCH 1200V 112A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 430 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 32A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/220ns
Switching Energy: 5.9mJ (on), 2.9mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 112 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 600 W
Description: IGBT TRENCH 1200V 112A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 430 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 32A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/220ns
Switching Energy: 5.9mJ (on), 2.9mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 112 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 600 W
auf Bestellung 274 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 27.61 EUR |
| 30+ | 16.84 EUR |
| 120+ | 14.47 EUR |
| IXYH40N120B4H1 |
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Hersteller: IXYS
IGBTs IXYH40N120B4H1
IGBTs IXYH40N120B4H1
auf Bestellung 341 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 27.08 EUR |
| 10+ | 16.53 EUR |
| 120+ | 15.18 EUR |
| IXYH40N120C3 |
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Hersteller: IXYS
IGBTs GenX3 1200V XPT IGBT
IGBTs GenX3 1200V XPT IGBT
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.5 EUR |
| 10+ | 16.02 EUR |
| 120+ | 13.47 EUR |
| 510+ | 12.46 EUR |
| IXYH40N120C3 |
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Hersteller: IXYS
Description: IGBT 1200V 70A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 24ns/125ns
Switching Energy: 3.9mJ (on), 660µJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 577 W
Description: IGBT 1200V 70A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 24ns/125ns
Switching Energy: 3.9mJ (on), 660µJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 577 W
auf Bestellung 152 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.69 EUR |
| 30+ | 14.24 EUR |
| 120+ | 12.17 EUR |
| IXYH40N120C3D1 |
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Hersteller: IXYS
IGBTs XPT 1200V IGBT GenX5 XPT IGBT
IGBTs XPT 1200V IGBT GenX5 XPT IGBT
auf Bestellung 273 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 28.32 EUR |
| 10+ | 18.2 EUR |
| 120+ | 16.29 EUR |
| 510+ | 15.98 EUR |
| IXYH40N120C3D1 |
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Hersteller: IXYS
Description: IGBT 1200V 64A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 24ns/125ns
Switching Energy: 3.9mJ (on), 660µJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 480 W
Description: IGBT 1200V 64A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 24ns/125ns
Switching Energy: 3.9mJ (on), 660µJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 480 W
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 28.13 EUR |
| 30+ | 17.18 EUR |
| 120+ | 14.78 EUR |
| 510+ | 13.66 EUR |
| IXYH40N120C4H1 |
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Hersteller: IXYS
IGBTs IXYH40N120C4H1
IGBTs IXYH40N120C4H1
auf Bestellung 363 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 27.08 EUR |
| 10+ | 16.53 EUR |
| 120+ | 15.16 EUR |
| IXYH40N120C4H1 |
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Hersteller: IXYS
Description: IGBT TRENCH 1200V 110A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 380 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/140ns
Switching Energy: 5.55mJ (on), 1.55mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 92 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 680 W
Description: IGBT TRENCH 1200V 110A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 380 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/140ns
Switching Energy: 5.55mJ (on), 1.55mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 92 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 680 W
auf Bestellung 219 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 27.61 EUR |
| 30+ | 16.83 EUR |
| 120+ | 14.47 EUR |
| IXYK140N120A4 |
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Hersteller: IXYS
Description: IGBT PT 1200V 480A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/590ns
Switching Energy: 4.9mJ (on), 12mJ (off)
Test Condition: 600V, 70A, 1.5Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1500 W
Description: IGBT PT 1200V 480A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/590ns
Switching Energy: 4.9mJ (on), 12mJ (off)
Test Condition: 600V, 70A, 1.5Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1500 W
auf Bestellung 419 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 95.84 EUR |
| 25+ | 66.24 EUR |
| 100+ | 64.26 EUR |
| IXYK140N120A4 |
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Hersteller: IXYS
IGBTs Disc IGBT XPT Gen4 1200V 140A TO264
IGBTs Disc IGBT XPT Gen4 1200V 140A TO264
auf Bestellung 2820 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 94.03 EUR |
| 10+ | 73.11 EUR |
| IXYN140N120A4 |
![]() |
Hersteller: IXYS
Description: IGBT MODULE 1200V 380A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1070 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 8.3 nF @ 25 V
Description: IGBT MODULE 1200V 380A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1070 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 8.3 nF @ 25 V
auf Bestellung 143 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 105.98 EUR |
| 10+ | 80.54 EUR |
| 100+ | 72.72 EUR |
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