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Foto | Bezeichnung | Hersteller | Beschreibung |
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BGH40N120HS1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3 Type of transistor: IGBT Mounting: THT Kind of package: tube Collector current: 40A Features of semiconductor devices: integrated anti-parallel diode Technology: Field Stop; SiC SBD; Trench Case: TO247-3 Collector-emitter voltage: 1.2kV |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
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BGH40N120HS1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3 Type of transistor: IGBT Mounting: THT Kind of package: tube Collector current: 40A Features of semiconductor devices: integrated anti-parallel diode Technology: Field Stop; SiC SBD; Trench Case: TO247-3 Collector-emitter voltage: 1.2kV Anzahl je Verpackung: 1 Stücke |
auf Bestellung 11 Stücke: Lieferzeit 7-14 Tag (e) |
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DACMI40N1200 | DACO Semiconductor |
![]() Description: Module; single transistor; 1.2kV; 25A; SOT227B; screw; SiC; screw Polarisation: unipolar Drain current: 25A Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Operating temperature: -55...150°C Case: SOT227B Semiconductor structure: single transistor Drain-source voltage: 1.2kV |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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DACMI40N1200 | DACO Semiconductor |
![]() Description: Module; single transistor; 1.2kV; 25A; SOT227B; screw; SiC; screw Polarisation: unipolar Drain current: 25A Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Operating temperature: -55...150°C Case: SOT227B Semiconductor structure: single transistor Drain-source voltage: 1.2kV Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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HGW40N120FHA | Watech Electronics |
Description: 1200V 40A IGBT without FRD TO-2 Packaging: Tape & Box (TB) |
auf Bestellung 1800 Stücke: Lieferzeit 10-14 Tag (e) |
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HKW40N120FHEI | Watech Electronics |
![]() Packaging: Tape & Box (TB) Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 378 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: 68ns/383ns Switching Energy: 2.23mJ (on), 1.64mJ (off) Test Condition: 600V, 40A, 12Ohm, 15V Gate Charge: 300 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 441 W |
auf Bestellung 1800 Stücke: Lieferzeit 10-14 Tag (e) |
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HKW40N120FHEQ | Watech Electronics |
![]() Packaging: Tape & Box (TB) Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 153 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: 75ns/320ns Switching Energy: 2.48mJ (on), 1.31mJ (off) Test Condition: 600V, 40A, 12Ohm, 15V Gate Charge: 307 nC Grade: Automotive Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 441 W Qualification: AEC-Q101 |
auf Bestellung 1800 Stücke: Lieferzeit 10-14 Tag (e) |
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HKW40N120FHRA | Watech Electronics |
![]() Packaging: Tape & Box (TB) Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: 90ns/362ns Switching Energy: 1.55mJ (on), 1.68mJ (off) Test Condition: 600V, 40A, 12Ohm, 15V Gate Charge: 307 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 441 W |
auf Bestellung 1800 Stücke: Lieferzeit 10-14 Tag (e) |
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HKW40N120FPTA1 | Watech Electronics |
![]() Packaging: Tape & Box (TB) Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 390 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 68ns/274ns Switching Energy: 2.92mJ (on), 2.84mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 296 nC Current - Collector (Ic) (Max): 82 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 714 W |
auf Bestellung 1800 Stücke: Lieferzeit 10-14 Tag (e) |
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IGW40N120H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3 Type of transistor: IGBT Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Power dissipation: 483W Manufacturer series: H3 Technology: TRENCHSTOP™ 3 Case: TO247-3 Collector-emitter voltage: 1.2kV |
auf Bestellung 219 Stücke: Lieferzeit 14-21 Tag (e) |
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IGW40N120H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3 Type of transistor: IGBT Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Power dissipation: 483W Manufacturer series: H3 Technology: TRENCHSTOP™ 3 Case: TO247-3 Collector-emitter voltage: 1.2kV Anzahl je Verpackung: 1 Stücke |
auf Bestellung 219 Stücke: Lieferzeit 7-14 Tag (e) |
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IGW40N120H3FKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/290ns Switching Energy: 3.16mJ Test Condition: 600V, 40A, 12Ohm, 15V Gate Charge: 185 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 483 W |
auf Bestellung 5893 Stücke: Lieferzeit 10-14 Tag (e) |
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IHW40N120R5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3 Type of transistor: IGBT Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 120A Turn-off time: 440ns Power dissipation: 197W Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Gate charge: 310nC Technology: TRENCHSTOP™ RC Case: TO247-3 Collector-emitter voltage: 1.2kV |
auf Bestellung 112 Stücke: Lieferzeit 14-21 Tag (e) |
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IHW40N120R5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3 Type of transistor: IGBT Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 120A Turn-off time: 440ns Power dissipation: 197W Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Gate charge: 310nC Technology: TRENCHSTOP™ RC Case: TO247-3 Collector-emitter voltage: 1.2kV Anzahl je Verpackung: 1 Stücke |
auf Bestellung 112 Stücke: Lieferzeit 7-14 Tag (e) |
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IHW40N120R5XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 40A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/420ns Switching Energy: 1.6mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 310 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 394 W |
auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
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IKQ140N120CH7XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 144 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 140A Supplier Device Package: PG-TO247-3-U01 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 68ns/541ns Switching Energy: 8.84mJ (on), 3.38mJ (off) Gate Charge: 970 nC Part Status: Active Current - Collector (Ic) (Max): 175 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 560 A Power - Max: 962 W |
auf Bestellung 355 Stücke: Lieferzeit 10-14 Tag (e) |
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IKQ40N120CH3XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A Supplier Device Package: PG-TO247-3-46 Td (on/off) @ 25°C: 30ns/300ns Switching Energy: 3.3mJ (on), 1.3mJ (off) Test Condition: 400V, 40A, 12Ohm, 15V Gate Charge: 190 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 500 W |
auf Bestellung 445 Stücke: Lieferzeit 10-14 Tag (e) |
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IKQ40N120CT2XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A Supplier Device Package: PG-TO247-3-46 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 32ns/328ns Switching Energy: 3.1mJ (on), 2.9mJ (off) Test Condition: 600V, 40A, 12Ohm, 15V Gate Charge: 190 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 500 W |
auf Bestellung 225 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW40N120CH7XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 120 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A Supplier Device Package: PG-TO247-3-U06 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 36ns/336ns Switching Energy: 1.69mJ (on), 920µJ (off) Gate Charge: 290 nC Part Status: Active Current - Collector (Ic) (Max): 82 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 330 W |
auf Bestellung 282 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW40N120CS6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3 Type of transistor: IGBT Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 160A Power dissipation: 250W Features of semiconductor devices: integrated anti-parallel diode Gate charge: 285nC Technology: TRENCHSTOP™ 6 Case: TO247-3 Collector-emitter voltage: 1.2kV |
auf Bestellung 63 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW40N120CS6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3 Type of transistor: IGBT Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 160A Power dissipation: 250W Features of semiconductor devices: integrated anti-parallel diode Gate charge: 285nC Technology: TRENCHSTOP™ 6 Case: TO247-3 Collector-emitter voltage: 1.2kV Anzahl je Verpackung: 1 Stücke |
auf Bestellung 63 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW40N120CS6XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 400 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A Supplier Device Package: PG-TO247-3-41 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/315ns Switching Energy: 2.55mJ (on), 1.55mJ (off) Test Condition: 600V, 40A, 9Ohm, 15V Gate Charge: 285 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 500 W |
auf Bestellung 510 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW40N120CS7XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 175 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/190ns Switching Energy: 2.55mJ (on), 1.75mJ (off) Test Condition: 600V, 40A, 4Ohm, 15V Gate Charge: 230 nC Part Status: Active Current - Collector (Ic) (Max): 82 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 357 W |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW40N120H3 | Infineon |
Transistor IGBT ; 1200V; 20V; 80A; 160A; 483W; 5,0V~6,5V; 185nC; -40°C~175°C; IKW40N120H3 TIKW40n120h3 Anzahl je Verpackung: 5 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW40N120H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3 Type of transistor: IGBT Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 80A Pulsed collector current: 160A Power dissipation: 483W Features of semiconductor devices: integrated anti-parallel diode Gate charge: 185nC Manufacturer series: H3 Technology: TRENCHSTOP™ 3 Case: TO247-3 Collector-emitter voltage: 1.2kV |
auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW40N120H3FKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 355 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/290ns Switching Energy: 4.4mJ Test Condition: 600V, 40A, 12Ohm, 15V Gate Charge: 185 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 483 W |
auf Bestellung 5405 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW40N120T2 | Infineon |
Trans IGBT Chip N-CH 1.2KV 75A IKW40N120T2FKSA1 IKW40N120T2 TIKW40n120t2 Anzahl je Verpackung: 5 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW40N120T2FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3 Type of transistor: IGBT Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 165A Power dissipation: 480W Features of semiconductor devices: integrated anti-parallel diode Gate charge: 192nC Technology: TRENCHSTOP™ Case: TO247-3 Collector-emitter voltage: 1.2kV |
auf Bestellung 93 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW40N120T2FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3 Type of transistor: IGBT Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 165A Power dissipation: 480W Features of semiconductor devices: integrated anti-parallel diode Gate charge: 192nC Technology: TRENCHSTOP™ Case: TO247-3 Collector-emitter voltage: 1.2kV Anzahl je Verpackung: 1 Stücke |
auf Bestellung 93 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW40N120T2FKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 258 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Td (on/off) @ 25°C: 33ns/314ns Switching Energy: 5.25mJ Test Condition: 600V, 40A, 12Ohm, 15V Gate Charge: 192 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 480 W |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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IKY140N120CH7XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 101 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 140A Supplier Device Package: PG-TO247-4-U10 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 50ns/407ns Switching Energy: 2.64mJ (on), 3.9mJ (off) Gate Charge: 1032 nC Part Status: Active Current - Collector (Ic) (Max): 232 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 560 A Power - Max: 962 W |
auf Bestellung 260 Stücke: Lieferzeit 10-14 Tag (e) |
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IKY40N120CH3XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 350 ns Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A Supplier Device Package: PG-TO247-4 Td (on/off) @ 25°C: 30ns/280ns Switching Energy: 2.18mJ (on), 1.3mJ (off) Test Condition: 600V, 40A, 12Ohm, 15V Gate Charge: 190 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 500 W |
auf Bestellung 223 Stücke: Lieferzeit 10-14 Tag (e) |
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IKY40N120CS6XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 255 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A Supplier Device Package: PG-TO247-4-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/315ns Switching Energy: 1.45mJ (on), 1.55mJ (off) Test Condition: 600V, 40A, 9Ohm, 15V Gate Charge: 285 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 500 W |
auf Bestellung 713 Stücke: Lieferzeit 10-14 Tag (e) |
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IKZA40N120CH7XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A Supplier Device Package: PG-TO247-4-U02 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 34ns/360ns Switching Energy: 970µJ (on), 1.01mJ (off) Gate Charge: 290 nC Part Status: Active Current - Collector (Ic) (Max): 95 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 330 W |
auf Bestellung 128 Stücke: Lieferzeit 10-14 Tag (e) |
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IKZA40N120CS7XKSA1 | Infineon Technologies |
![]() Packaging: Tube Part Status: Active |
auf Bestellung 126 Stücke: Lieferzeit 10-14 Tag (e) |
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IRG8P40N120KD-EPBF | International Rectifier |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 80 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 40ns/245ns Switching Energy: 1.6mJ (on), 1.8mJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 240 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 305 W |
auf Bestellung 10475 Stücke: Lieferzeit 10-14 Tag (e) |
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IRG8P40N120KDPBF | International Rectifier |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 80 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 40ns/245ns Switching Energy: 1.6mJ (on), 1.8mJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 240 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 305 W |
auf Bestellung 7936 Stücke: Lieferzeit 10-14 Tag (e) |
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IXGH40N120C3D1 | IXYS |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 17ns/130ns Switching Energy: 1.8mJ (on), 550µJ (off) Test Condition: 600V, 30A, 3Ohm, 15V Gate Charge: 142 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 180 A Power - Max: 380 W |
auf Bestellung 285 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYH40N120B3D1 | IXYS |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A Supplier Device Package: TO-247 (IXYH) Td (on/off) @ 25°C: 22ns/177ns Switching Energy: 2.7mJ (on), 1.6mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 87 nC Part Status: Active Current - Collector (Ic) (Max): 86 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 180 A Power - Max: 480 W |
auf Bestellung 580 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYH40N120B4H1 | IXYS |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 430 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 32A Supplier Device Package: TO-247 (IXTH) IGBT Type: Trench Td (on/off) @ 25°C: 19ns/220ns Switching Energy: 5.9mJ (on), 2.9mJ (off) Test Condition: 960V, 32A, 5Ohm, 15V Gate Charge: 94 nC Current - Collector (Ic) (Max): 112 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 240 A Power - Max: 600 W |
auf Bestellung 274 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYH40N120C3 | IXYS |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 24ns/125ns Switching Energy: 3.9mJ (on), 660µJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 85 nC Part Status: Active Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 115 A Power - Max: 577 W |
auf Bestellung 239 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYH40N120C4H1 | IXYS |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 380 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A Supplier Device Package: TO-247 (IXYH) IGBT Type: Trench Td (on/off) @ 25°C: 21ns/140ns Switching Energy: 5.55mJ (on), 1.55mJ (off) Test Condition: 960V, 32A, 5Ohm, 15V Gate Charge: 92 nC Current - Collector (Ic) (Max): 110 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 230 A Power - Max: 680 W |
auf Bestellung 295 Stücke: Lieferzeit 10-14 Tag (e) |
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NGTB40N120FL3WG | ONSEMI |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3 Type of transistor: IGBT Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 160A Power dissipation: 227W Features of semiconductor devices: integrated anti-parallel diode Gate charge: 212nC Case: TO247-3 Collector-emitter voltage: 1.2kV |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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NGTB40N120FL3WG | ONSEMI |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3 Type of transistor: IGBT Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 160A Power dissipation: 227W Features of semiconductor devices: integrated anti-parallel diode Gate charge: 212nC Case: TO247-3 Collector-emitter voltage: 1.2kV Anzahl je Verpackung: 1 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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NGTB40N120FL3WG | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 136 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/145ns Switching Energy: 1.6mJ (on), 1.1mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 212 nC Part Status: Active Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 454 W |
auf Bestellung 1694 Stücke: Lieferzeit 10-14 Tag (e) |
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NGTB40N120IHRWG | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 40A Supplier Device Package: TO-247 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/230ns Switching Energy: 950µJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 225 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 384 W |
auf Bestellung 31 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBG040N120M3S | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBG040N120M3S | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V |
auf Bestellung 1210 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBG040N120SC1 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V |
auf Bestellung 855 Stücke: Lieferzeit 10-14 Tag (e) |
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NTC040N120SC1 | onsemi |
![]() Packaging: Tray Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V Power Dissipation (Max): 348W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 10mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V |
auf Bestellung 17199 Stücke: Lieferzeit 10-14 Tag (e) |
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NTH4L040N120M3S | onsemi |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 10mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V |
auf Bestellung 668 Stücke: Lieferzeit 10-14 Tag (e) |
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NTH4L040N120SC1 | onsemi |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V Power Dissipation (Max): 319W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 10mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V |
auf Bestellung 165 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHL040N120M3S | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 10mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V |
auf Bestellung 118178 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHL040N120SC1 | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V Power Dissipation (Max): 348W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 10mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V |
auf Bestellung 1759 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG040N120M3S | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 10mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 18346 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG040N120M3S | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 10mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 17600 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG040N120SC1 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 10mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 19200 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG040N120SC1 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 10mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 20273 Stücke: Lieferzeit 10-14 Tag (e) |
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NVH4L040N120M3S | onsemi |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 10mA Supplier Device Package: TO-247-4L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +18V, -3V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 1572 Stücke: Lieferzeit 10-14 Tag (e) |
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NVH4L040N120SC1 | onsemi |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V Power Dissipation (Max): 319W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 10mA Supplier Device Package: TO-247-4L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 221 Stücke: Lieferzeit 10-14 Tag (e) |
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BGH40N120HS1 |
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Collector-emitter voltage: 1.2kV
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 12.97 EUR |
8+ | 9.01 EUR |
9+ | 8.52 EUR |
BGH40N120HS1 |
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 12.97 EUR |
8+ | 9.01 EUR |
9+ | 8.52 EUR |
DACMI40N1200 |
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Hersteller: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 25A; SOT227B; screw; SiC; screw
Polarisation: unipolar
Drain current: 25A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Operating temperature: -55...150°C
Case: SOT227B
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 25A; SOT227B; screw; SiC; screw
Polarisation: unipolar
Drain current: 25A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Operating temperature: -55...150°C
Case: SOT227B
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 63.66 EUR |
DACMI40N1200 |
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Hersteller: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 25A; SOT227B; screw; SiC; screw
Polarisation: unipolar
Drain current: 25A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Operating temperature: -55...150°C
Case: SOT227B
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 25A; SOT227B; screw; SiC; screw
Polarisation: unipolar
Drain current: 25A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Operating temperature: -55...150°C
Case: SOT227B
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 63.66 EUR |
HGW40N120FHA |
Hersteller: Watech Electronics
Description: 1200V 40A IGBT without FRD TO-2
Packaging: Tape & Box (TB)
Description: 1200V 40A IGBT without FRD TO-2
Packaging: Tape & Box (TB)
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
600+ | 15.16 EUR |
HKW40N120FHEI |
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Hersteller: Watech Electronics
Description: IGBT 1200V 80A TO-247-3
Packaging: Tape & Box (TB)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 378 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 68ns/383ns
Switching Energy: 2.23mJ (on), 1.64mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 300 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 441 W
Description: IGBT 1200V 80A TO-247-3
Packaging: Tape & Box (TB)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 378 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 68ns/383ns
Switching Energy: 2.23mJ (on), 1.64mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 300 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 441 W
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
600+ | 26.96 EUR |
HKW40N120FHEQ |
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Hersteller: Watech Electronics
Description: IGBT 1200V 80A TO-247-3
Packaging: Tape & Box (TB)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 153 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 75ns/320ns
Switching Energy: 2.48mJ (on), 1.31mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 307 nC
Grade: Automotive
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 441 W
Qualification: AEC-Q101
Description: IGBT 1200V 80A TO-247-3
Packaging: Tape & Box (TB)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 153 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 75ns/320ns
Switching Energy: 2.48mJ (on), 1.31mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 307 nC
Grade: Automotive
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 441 W
Qualification: AEC-Q101
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
600+ | 15.16 EUR |
HKW40N120FHRA |
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Hersteller: Watech Electronics
Description: IGBT 1200V 80A TO-247-3
Packaging: Tape & Box (TB)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 90ns/362ns
Switching Energy: 1.55mJ (on), 1.68mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 307 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 441 W
Description: IGBT 1200V 80A TO-247-3
Packaging: Tape & Box (TB)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 90ns/362ns
Switching Energy: 1.55mJ (on), 1.68mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 307 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 441 W
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
600+ | 15.16 EUR |
HKW40N120FPTA1 |
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Hersteller: Watech Electronics
Description: IGBT FIELD STOP 1200V 82A TO-247
Packaging: Tape & Box (TB)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 390 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 68ns/274ns
Switching Energy: 2.92mJ (on), 2.84mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 296 nC
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 714 W
Description: IGBT FIELD STOP 1200V 82A TO-247
Packaging: Tape & Box (TB)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 390 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 68ns/274ns
Switching Energy: 2.92mJ (on), 2.84mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 296 nC
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 714 W
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
600+ | 11.79 EUR |
IGW40N120H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Power dissipation: 483W
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Power dissipation: 483W
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Case: TO247-3
Collector-emitter voltage: 1.2kV
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.19 EUR |
13+ | 5.51 EUR |
14+ | 5.21 EUR |
IGW40N120H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Power dissipation: 483W
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Power dissipation: 483W
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 219 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.19 EUR |
13+ | 5.51 EUR |
14+ | 5.21 EUR |
IGW40N120H3FKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/290ns
Switching Energy: 3.16mJ
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 185 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 483 W
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/290ns
Switching Energy: 3.16mJ
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 185 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 483 W
auf Bestellung 5893 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 12.32 EUR |
30+ | 7.10 EUR |
120+ | 5.95 EUR |
510+ | 5.12 EUR |
IHW40N120R5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Turn-off time: 440ns
Power dissipation: 197W
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 310nC
Technology: TRENCHSTOP™ RC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Turn-off time: 440ns
Power dissipation: 197W
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 310nC
Technology: TRENCHSTOP™ RC
Case: TO247-3
Collector-emitter voltage: 1.2kV
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.61 EUR |
21+ | 3.55 EUR |
22+ | 3.35 EUR |
60+ | 3.22 EUR |
IHW40N120R5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Turn-off time: 440ns
Power dissipation: 197W
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 310nC
Technology: TRENCHSTOP™ RC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Turn-off time: 440ns
Power dissipation: 197W
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 310nC
Technology: TRENCHSTOP™ RC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 112 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.61 EUR |
21+ | 3.55 EUR |
22+ | 3.35 EUR |
60+ | 3.22 EUR |
IHW40N120R5XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/420ns
Switching Energy: 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 394 W
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/420ns
Switching Energy: 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 394 W
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 8.48 EUR |
IKQ140N120CH7XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 175A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 144 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 140A
Supplier Device Package: PG-TO247-3-U01
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 68ns/541ns
Switching Energy: 8.84mJ (on), 3.38mJ (off)
Gate Charge: 970 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 560 A
Power - Max: 962 W
Description: IGBT TRENCH FS 1200V 175A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 144 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 140A
Supplier Device Package: PG-TO247-3-U01
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 68ns/541ns
Switching Energy: 8.84mJ (on), 3.38mJ (off)
Gate Charge: 970 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 560 A
Power - Max: 962 W
auf Bestellung 355 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 27.30 EUR |
30+ | 16.83 EUR |
120+ | 14.54 EUR |
IKQ40N120CH3XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT 1200V 80A TO247-3-46
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Supplier Device Package: PG-TO247-3-46
Td (on/off) @ 25°C: 30ns/300ns
Switching Energy: 3.3mJ (on), 1.3mJ (off)
Test Condition: 400V, 40A, 12Ohm, 15V
Gate Charge: 190 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
Description: IGBT 1200V 80A TO247-3-46
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Supplier Device Package: PG-TO247-3-46
Td (on/off) @ 25°C: 30ns/300ns
Switching Energy: 3.3mJ (on), 1.3mJ (off)
Test Condition: 400V, 40A, 12Ohm, 15V
Gate Charge: 190 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
auf Bestellung 445 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 14.84 EUR |
30+ | 8.69 EUR |
120+ | 7.34 EUR |
IKQ40N120CT2XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/328ns
Switching Energy: 3.1mJ (on), 2.9mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 190 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/328ns
Switching Energy: 3.1mJ (on), 2.9mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 190 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
auf Bestellung 225 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 18.59 EUR |
30+ | 11.09 EUR |
120+ | 9.44 EUR |
IKW40N120CH7XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 82A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-U06
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/336ns
Switching Energy: 1.69mJ (on), 920µJ (off)
Gate Charge: 290 nC
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 330 W
Description: IGBT TRENCH FS 1200V 82A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-U06
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/336ns
Switching Energy: 1.69mJ (on), 920µJ (off)
Gate Charge: 290 nC
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 330 W
auf Bestellung 282 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 11.63 EUR |
30+ | 6.68 EUR |
120+ | 5.59 EUR |
IKW40N120CS6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Power dissipation: 250W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 285nC
Technology: TRENCHSTOP™ 6
Case: TO247-3
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Power dissipation: 250W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 285nC
Technology: TRENCHSTOP™ 6
Case: TO247-3
Collector-emitter voltage: 1.2kV
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 7.11 EUR |
15+ | 4.88 EUR |
16+ | 4.60 EUR |
IKW40N120CS6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Power dissipation: 250W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 285nC
Technology: TRENCHSTOP™ 6
Case: TO247-3
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Power dissipation: 250W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 285nC
Technology: TRENCHSTOP™ 6
Case: TO247-3
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 63 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 7.11 EUR |
15+ | 4.88 EUR |
16+ | 4.60 EUR |
510+ | 4.43 EUR |
IKW40N120CS6XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 400 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/315ns
Switching Energy: 2.55mJ (on), 1.55mJ (off)
Test Condition: 600V, 40A, 9Ohm, 15V
Gate Charge: 285 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 400 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/315ns
Switching Energy: 2.55mJ (on), 1.55mJ (off)
Test Condition: 600V, 40A, 9Ohm, 15V
Gate Charge: 285 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
auf Bestellung 510 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 13.25 EUR |
30+ | 7.69 EUR |
120+ | 6.46 EUR |
510+ | 5.65 EUR |
IKW40N120CS7XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 82A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 175 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/190ns
Switching Energy: 2.55mJ (on), 1.75mJ (off)
Test Condition: 600V, 40A, 4Ohm, 15V
Gate Charge: 230 nC
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 357 W
Description: IGBT TRENCH FS 1200V 82A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 175 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/190ns
Switching Energy: 2.55mJ (on), 1.75mJ (off)
Test Condition: 600V, 40A, 4Ohm, 15V
Gate Charge: 230 nC
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 357 W
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 14.33 EUR |
30+ | 8.36 EUR |
120+ | 7.05 EUR |
IKW40N120H3 |
Hersteller: Infineon
Transistor IGBT ; 1200V; 20V; 80A; 160A; 483W; 5,0V~6,5V; 185nC; -40°C~175°C; IKW40N120H3 TIKW40n120h3
Anzahl je Verpackung: 5 Stücke
Transistor IGBT ; 1200V; 20V; 80A; 160A; 483W; 5,0V~6,5V; 185nC; -40°C~175°C; IKW40N120H3 TIKW40n120h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 17.84 EUR |
IKW40N120H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 160A
Power dissipation: 483W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 185nC
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 160A
Power dissipation: 483W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 185nC
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Case: TO247-3
Collector-emitter voltage: 1.2kV
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.94 EUR |
10+ | 7.16 EUR |
IKW40N120H3FKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 355 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/290ns
Switching Energy: 4.4mJ
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 185 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 483 W
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 355 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/290ns
Switching Energy: 4.4mJ
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 185 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 483 W
auf Bestellung 5405 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 15.00 EUR |
30+ | 8.78 EUR |
120+ | 7.42 EUR |
510+ | 6.65 EUR |
IKW40N120T2 |
Hersteller: Infineon
Trans IGBT Chip N-CH 1.2KV 75A IKW40N120T2FKSA1 IKW40N120T2 TIKW40n120t2
Anzahl je Verpackung: 5 Stücke
Trans IGBT Chip N-CH 1.2KV 75A IKW40N120T2FKSA1 IKW40N120T2 TIKW40n120t2
Anzahl je Verpackung: 5 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 23.71 EUR |
IKW40N120T2FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 165A
Power dissipation: 480W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 192nC
Technology: TRENCHSTOP™
Case: TO247-3
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 165A
Power dissipation: 480W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 192nC
Technology: TRENCHSTOP™
Case: TO247-3
Collector-emitter voltage: 1.2kV
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.27 EUR |
10+ | 7.44 EUR |
IKW40N120T2FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 165A
Power dissipation: 480W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 192nC
Technology: TRENCHSTOP™
Case: TO247-3
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 165A
Power dissipation: 480W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 192nC
Technology: TRENCHSTOP™
Case: TO247-3
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 93 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.27 EUR |
10+ | 7.44 EUR |
120+ | 7.15 EUR |
IKW40N120T2FKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH 1200V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 258 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: 33ns/314ns
Switching Energy: 5.25mJ
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 192 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 480 W
Description: IGBT TRENCH 1200V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 258 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: 33ns/314ns
Switching Energy: 5.25mJ
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 192 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 480 W
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 16.56 EUR |
30+ | 9.78 EUR |
120+ | 8.30 EUR |
IKY140N120CH7XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 232A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 140A
Supplier Device Package: PG-TO247-4-U10
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/407ns
Switching Energy: 2.64mJ (on), 3.9mJ (off)
Gate Charge: 1032 nC
Part Status: Active
Current - Collector (Ic) (Max): 232 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 560 A
Power - Max: 962 W
Description: IGBT TRENCH FS 1200V 232A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 140A
Supplier Device Package: PG-TO247-4-U10
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/407ns
Switching Energy: 2.64mJ (on), 3.9mJ (off)
Gate Charge: 1032 nC
Part Status: Active
Current - Collector (Ic) (Max): 232 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 560 A
Power - Max: 962 W
auf Bestellung 260 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 23.09 EUR |
30+ | 14.03 EUR |
120+ | 12.04 EUR |
IKY40N120CH3XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT 1200V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Supplier Device Package: PG-TO247-4
Td (on/off) @ 25°C: 30ns/280ns
Switching Energy: 2.18mJ (on), 1.3mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 190 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
Description: IGBT 1200V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Supplier Device Package: PG-TO247-4
Td (on/off) @ 25°C: 30ns/280ns
Switching Energy: 2.18mJ (on), 1.3mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 190 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
auf Bestellung 223 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 16.12 EUR |
30+ | 9.51 EUR |
120+ | 8.05 EUR |
IKY40N120CS6XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 255 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-4-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/315ns
Switching Energy: 1.45mJ (on), 1.55mJ (off)
Test Condition: 600V, 40A, 9Ohm, 15V
Gate Charge: 285 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
Description: IGBT TRENCH FS 1200V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 255 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-4-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/315ns
Switching Energy: 1.45mJ (on), 1.55mJ (off)
Test Condition: 600V, 40A, 9Ohm, 15V
Gate Charge: 285 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
auf Bestellung 713 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 13.82 EUR |
30+ | 8.04 EUR |
120+ | 6.77 EUR |
510+ | 5.97 EUR |
IKZA40N120CH7XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 95A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-4-U02
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/360ns
Switching Energy: 970µJ (on), 1.01mJ (off)
Gate Charge: 290 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 330 W
Description: IGBT TRENCH FS 1200V 95A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-4-U02
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/360ns
Switching Energy: 970µJ (on), 1.01mJ (off)
Gate Charge: 290 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 330 W
auf Bestellung 128 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 15.01 EUR |
30+ | 8.79 EUR |
120+ | 7.43 EUR |
IKZA40N120CS7XKSA1 |
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auf Bestellung 126 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 15.91 EUR |
30+ | 9.37 EUR |
120+ | 7.93 EUR |
IRG8P40N120KD-EPBF |
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Hersteller: International Rectifier
Description: IGBT 1200V 60A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/245ns
Switching Energy: 1.6mJ (on), 1.8mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 240 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 305 W
Description: IGBT 1200V 60A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/245ns
Switching Energy: 1.6mJ (on), 1.8mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 240 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 305 W
auf Bestellung 10475 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
56+ | 9.18 EUR |
IRG8P40N120KDPBF |
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Hersteller: International Rectifier
Description: IGBT 1200V 60A TO-247AC
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 40ns/245ns
Switching Energy: 1.6mJ (on), 1.8mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 240 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 305 W
Description: IGBT 1200V 60A TO-247AC
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 40ns/245ns
Switching Energy: 1.6mJ (on), 1.8mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 240 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 305 W
auf Bestellung 7936 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
59+ | 8.66 EUR |
IXGH40N120C3D1 |
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Hersteller: IXYS
Description: IGBT PT 1200V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/130ns
Switching Energy: 1.8mJ (on), 550µJ (off)
Test Condition: 600V, 30A, 3Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 380 W
Description: IGBT PT 1200V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/130ns
Switching Energy: 1.8mJ (on), 550µJ (off)
Test Condition: 600V, 30A, 3Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 380 W
auf Bestellung 285 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 22.25 EUR |
30+ | 17.65 EUR |
IXYH40N120B3D1 |
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Hersteller: IXYS
Description: IGBT 1200V 86A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 22ns/177ns
Switching Energy: 2.7mJ (on), 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 480 W
Description: IGBT 1200V 86A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 22ns/177ns
Switching Energy: 2.7mJ (on), 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 480 W
auf Bestellung 580 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 22.90 EUR |
30+ | 13.91 EUR |
120+ | 11.94 EUR |
510+ | 11.57 EUR |
IXYH40N120B4H1 |
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Hersteller: IXYS
Description: IGBT TRENCH 1200V 112A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 430 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 32A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/220ns
Switching Energy: 5.9mJ (on), 2.9mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 112 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 600 W
Description: IGBT TRENCH 1200V 112A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 430 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 32A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/220ns
Switching Energy: 5.9mJ (on), 2.9mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 112 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 600 W
auf Bestellung 274 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 18.83 EUR |
30+ | 12.00 EUR |
IXYH40N120C3 |
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Hersteller: IXYS
Description: IGBT 1200V 70A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 24ns/125ns
Switching Energy: 3.9mJ (on), 660µJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 577 W
Description: IGBT 1200V 70A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 24ns/125ns
Switching Energy: 3.9mJ (on), 660µJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 577 W
auf Bestellung 239 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 20.35 EUR |
30+ | 12.24 EUR |
120+ | 10.46 EUR |
IXYH40N120C4H1 |
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Hersteller: IXYS
Description: IGBT TRENCH 1200V 110A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 380 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/140ns
Switching Energy: 5.55mJ (on), 1.55mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 92 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 680 W
Description: IGBT TRENCH 1200V 110A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 380 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/140ns
Switching Energy: 5.55mJ (on), 1.55mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 92 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 680 W
auf Bestellung 295 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 17.60 EUR |
30+ | 10.45 EUR |
120+ | 8.89 EUR |
NGTB40N120FL3WG |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Power dissipation: 227W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 212nC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Power dissipation: 227W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 212nC
Case: TO247-3
Collector-emitter voltage: 1.2kV
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.04 EUR |
10+ | 7.19 EUR |
NGTB40N120FL3WG |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Power dissipation: 227W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 212nC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Power dissipation: 227W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 212nC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.04 EUR |
10+ | 7.19 EUR |
NGTB40N120FL3WG |
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Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 160A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 136 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/145ns
Switching Energy: 1.6mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 212 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 454 W
Description: IGBT TRENCH FS 1200V 160A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 136 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/145ns
Switching Energy: 1.6mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 212 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 454 W
auf Bestellung 1694 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 11.70 EUR |
30+ | 6.72 EUR |
120+ | 5.62 EUR |
510+ | 4.82 EUR |
1020+ | 4.79 EUR |
NGTB40N120IHRWG |
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Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 40A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/230ns
Switching Energy: 950µJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 225 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 384 W
Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 40A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/230ns
Switching Energy: 950µJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 225 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 384 W
auf Bestellung 31 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 11.40 EUR |
30+ | 6.53 EUR |
NTBG040N120M3S |
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Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
800+ | 8.30 EUR |
NTBG040N120M3S |
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Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 1210 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 17.74 EUR |
10+ | 12.25 EUR |
100+ | 9.14 EUR |
NTBG040N120SC1 |
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Hersteller: onsemi
Description: SICFET N-CH 1200V 60A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Description: SICFET N-CH 1200V 60A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
auf Bestellung 855 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 35.87 EUR |
10+ | 27.00 EUR |
100+ | 21.79 EUR |
NTC040N120SC1 |
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Hersteller: onsemi
Description: SIC MOS WAFER SALES 40MOHM 1200V
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V
Description: SIC MOS WAFER SALES 40MOHM 1200V
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V
auf Bestellung 17199 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
819+ | 20.35 EUR |
NTH4L040N120M3S |
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Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET ELI
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Description: SILICON CARBIDE (SIC) MOSFET ELI
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 668 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 22.79 EUR |
30+ | 14.37 EUR |
120+ | 13.47 EUR |
510+ | 13.29 EUR |
NTH4L040N120SC1 |
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Hersteller: onsemi
Description: SICFET N-CH 1200V 58A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 319W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V
Description: SICFET N-CH 1200V 58A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 319W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V
auf Bestellung 165 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 30.22 EUR |
30+ | 22.93 EUR |
120+ | 21.68 EUR |
NTHL040N120M3S |
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Hersteller: onsemi
Description: SIC MOS TO247-3L 40MOHM 1200V M3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Description: SIC MOS TO247-3L 40MOHM 1200V M3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 118178 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 18.55 EUR |
30+ | 11.07 EUR |
120+ | 9.43 EUR |
510+ | 9.29 EUR |
NTHL040N120SC1 |
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Hersteller: onsemi
Description: SICFET N-CH 1200V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V
Description: SICFET N-CH 1200V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V
auf Bestellung 1759 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 36.24 EUR |
30+ | 23.38 EUR |
120+ | 21.38 EUR |
NVBG040N120M3S |
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Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 18346 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 33.09 EUR |
10+ | 23.67 EUR |
100+ | 18.60 EUR |
NVBG040N120M3S |
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Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 17600 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
800+ | 18.60 EUR |
NVBG040N120SC1 |
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Hersteller: onsemi
Description: TRANS SJT N-CH 1200V 60A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Qualification: AEC-Q101
Description: TRANS SJT N-CH 1200V 60A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 19200 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
800+ | 28.43 EUR |
NVBG040N120SC1 |
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Hersteller: onsemi
Description: TRANS SJT N-CH 1200V 60A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Qualification: AEC-Q101
Description: TRANS SJT N-CH 1200V 60A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 20273 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 43.98 EUR |
10+ | 33.65 EUR |
100+ | 28.43 EUR |
NVH4L040N120M3S |
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Hersteller: onsemi
Description: SIC MOS TO247-4L 40MOHM 1200V M3
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -3V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
Description: SIC MOS TO247-4L 40MOHM 1200V M3
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -3V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 1572 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 33.95 EUR |
30+ | 24.98 EUR |
120+ | 23.83 EUR |
NVH4L040N120SC1 |
![]() |
Hersteller: onsemi
Description: SICFET N-CH 1200V 58A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 319W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V
Qualification: AEC-Q101
Description: SICFET N-CH 1200V 58A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 319W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 221 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 34.39 EUR |
30+ | 27.26 EUR |
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