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BGH40N120HS1 BGH40N120HS1 BASiC SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Collector-emitter voltage: 1.2kV
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.97 EUR
8+9.01 EUR
9+8.52 EUR
Mindestbestellmenge: 6
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BGH40N120HS1 BGH40N120HS1 BASiC SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
6+12.97 EUR
8+9.01 EUR
9+8.52 EUR
Mindestbestellmenge: 6
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DACMI40N1200 DACMI40N1200 DACO Semiconductor DACMI40N1200.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 25A; SOT227B; screw; SiC; screw
Polarisation: unipolar
Drain current: 25A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Operating temperature: -55...150°C
Case: SOT227B
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
2+63.66 EUR
Mindestbestellmenge: 2
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DACMI40N1200 DACMI40N1200 DACO Semiconductor DACMI40N1200.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 25A; SOT227B; screw; SiC; screw
Polarisation: unipolar
Drain current: 25A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Operating temperature: -55...150°C
Case: SOT227B
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
2+63.66 EUR
Mindestbestellmenge: 2
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HGW40N120FHA Watech Electronics Description: 1200V 40A IGBT without FRD TO-2
Packaging: Tape & Box (TB)
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
600+15.16 EUR
Mindestbestellmenge: 600
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HKW40N120FHEI HKW40N120FHEI Watech Electronics HKW40N120FHEIV2.0Release.pdf Description: IGBT 1200V 80A TO-247-3
Packaging: Tape & Box (TB)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 378 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 68ns/383ns
Switching Energy: 2.23mJ (on), 1.64mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 300 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 441 W
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
600+26.96 EUR
Mindestbestellmenge: 600
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HKW40N120FHEQ HKW40N120FHEQ Watech Electronics HKW40N120FHEQV1.0EN.pdf Description: IGBT 1200V 80A TO-247-3
Packaging: Tape & Box (TB)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 153 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 75ns/320ns
Switching Energy: 2.48mJ (on), 1.31mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 307 nC
Grade: Automotive
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 441 W
Qualification: AEC-Q101
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
600+15.16 EUR
Mindestbestellmenge: 600
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HKW40N120FHRA HKW40N120FHRA Watech Electronics HKW40N120FHRAV1.0EN.pdf Description: IGBT 1200V 80A TO-247-3
Packaging: Tape & Box (TB)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 90ns/362ns
Switching Energy: 1.55mJ (on), 1.68mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 307 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 441 W
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
600+15.16 EUR
Mindestbestellmenge: 600
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HKW40N120FPTA1 HKW40N120FPTA1 Watech Electronics HKW40N120FPTA1V1.0EN.pdf Description: IGBT FIELD STOP 1200V 82A TO-247
Packaging: Tape & Box (TB)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 390 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 68ns/274ns
Switching Energy: 2.92mJ (on), 2.84mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 296 nC
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 714 W
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
600+11.79 EUR
Mindestbestellmenge: 600
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IGW40N120H3FKSA1 IGW40N120H3FKSA1 INFINEON TECHNOLOGIES IGW40N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Power dissipation: 483W
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Case: TO247-3
Collector-emitter voltage: 1.2kV
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.19 EUR
13+5.51 EUR
14+5.21 EUR
Mindestbestellmenge: 10
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IGW40N120H3FKSA1 IGW40N120H3FKSA1 INFINEON TECHNOLOGIES IGW40N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Power dissipation: 483W
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 219 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.19 EUR
13+5.51 EUR
14+5.21 EUR
Mindestbestellmenge: 10
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IGW40N120H3FKSA1 IGW40N120H3FKSA1 Infineon Technologies DS_IG40N120H3_1_1_final.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a304325305e6d0125921b9364704d Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/290ns
Switching Energy: 3.16mJ
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 185 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 483 W
auf Bestellung 5893 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.32 EUR
30+7.10 EUR
120+5.95 EUR
510+5.12 EUR
Mindestbestellmenge: 2
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IHW40N120R5XKSA1 IHW40N120R5XKSA1 INFINEON TECHNOLOGIES IHW40N120R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Turn-off time: 440ns
Power dissipation: 197W
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 310nC
Technology: TRENCHSTOP™ RC
Case: TO247-3
Collector-emitter voltage: 1.2kV
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.61 EUR
21+3.55 EUR
22+3.35 EUR
60+3.22 EUR
Mindestbestellmenge: 13
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IHW40N120R5XKSA1 IHW40N120R5XKSA1 INFINEON TECHNOLOGIES IHW40N120R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Turn-off time: 440ns
Power dissipation: 197W
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 310nC
Technology: TRENCHSTOP™ RC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 112 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.61 EUR
21+3.55 EUR
22+3.35 EUR
60+3.22 EUR
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IHW40N120R5XKSA1 IHW40N120R5XKSA1 Infineon Technologies Infineon-IHW40N120R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0f4a65430e9 Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/420ns
Switching Energy: 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 394 W
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.48 EUR
Mindestbestellmenge: 3
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IKQ140N120CH7XKSA1 IKQ140N120CH7XKSA1 Infineon Technologies Infineon-IKQ140N120CH7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c84a33f400184e2a136c02d5f Description: IGBT TRENCH FS 1200V 175A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 144 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 140A
Supplier Device Package: PG-TO247-3-U01
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 68ns/541ns
Switching Energy: 8.84mJ (on), 3.38mJ (off)
Gate Charge: 970 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 560 A
Power - Max: 962 W
auf Bestellung 355 Stücke:
Lieferzeit 10-14 Tag (e)
1+27.30 EUR
30+16.83 EUR
120+14.54 EUR
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IKQ40N120CH3XKSA1 IKQ40N120CH3XKSA1 Infineon Technologies Infineon-IKQ40N120CH3-DS-v02_02-EN.pdf?fileId=5546d4625bd71aa0015bd817be8a0538 Description: IGBT 1200V 80A TO247-3-46
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Supplier Device Package: PG-TO247-3-46
Td (on/off) @ 25°C: 30ns/300ns
Switching Energy: 3.3mJ (on), 1.3mJ (off)
Test Condition: 400V, 40A, 12Ohm, 15V
Gate Charge: 190 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
auf Bestellung 445 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.84 EUR
30+8.69 EUR
120+7.34 EUR
Mindestbestellmenge: 2
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IKQ40N120CT2XKSA1 IKQ40N120CT2XKSA1 Infineon Technologies Infineon-IKQ40N120CT2-DS-v02_02-EN.pdf?fileId=5546d4625bd71aa0015c0be021fb0a7d Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/328ns
Switching Energy: 3.1mJ (on), 2.9mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 190 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
auf Bestellung 225 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.59 EUR
30+11.09 EUR
120+9.44 EUR
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IKW40N120CH7XKSA1 IKW40N120CH7XKSA1 Infineon Technologies Infineon-IKW40N120CH7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c84a33f400184e2a17ad12da3 Description: IGBT TRENCH FS 1200V 82A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-U06
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/336ns
Switching Energy: 1.69mJ (on), 920µJ (off)
Gate Charge: 290 nC
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 330 W
auf Bestellung 282 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.63 EUR
30+6.68 EUR
120+5.59 EUR
Mindestbestellmenge: 2
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IKW40N120CS6XKSA1 IKW40N120CS6XKSA1 INFINEON TECHNOLOGIES IKW40N120CS6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Power dissipation: 250W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 285nC
Technology: TRENCHSTOP™ 6
Case: TO247-3
Collector-emitter voltage: 1.2kV
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
11+7.11 EUR
15+4.88 EUR
16+4.60 EUR
Mindestbestellmenge: 11
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IKW40N120CS6XKSA1 IKW40N120CS6XKSA1 INFINEON TECHNOLOGIES IKW40N120CS6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Power dissipation: 250W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 285nC
Technology: TRENCHSTOP™ 6
Case: TO247-3
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 63 Stücke:
Lieferzeit 7-14 Tag (e)
11+7.11 EUR
15+4.88 EUR
16+4.60 EUR
510+4.43 EUR
Mindestbestellmenge: 11
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IKW40N120CS6XKSA1 IKW40N120CS6XKSA1 Infineon Technologies Infineon-IKW40N120CS6-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01638801e23716c0 Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 400 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/315ns
Switching Energy: 2.55mJ (on), 1.55mJ (off)
Test Condition: 600V, 40A, 9Ohm, 15V
Gate Charge: 285 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
auf Bestellung 510 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.25 EUR
30+7.69 EUR
120+6.46 EUR
510+5.65 EUR
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IKW40N120CS7XKSA1 IKW40N120CS7XKSA1 Infineon Technologies Infineon-IKW40N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d952805a0 Description: IGBT TRENCH FS 1200V 82A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 175 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/190ns
Switching Energy: 2.55mJ (on), 1.75mJ (off)
Test Condition: 600V, 40A, 4Ohm, 15V
Gate Charge: 230 nC
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 357 W
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.33 EUR
30+8.36 EUR
120+7.05 EUR
Mindestbestellmenge: 2
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IKW40N120H3 Infineon Transistor IGBT ; 1200V; 20V; 80A; 160A; 483W; 5,0V~6,5V; 185nC; -40°C~175°C;   IKW40N120H3 TIKW40n120h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
5+17.84 EUR
Mindestbestellmenge: 5
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IKW40N120H3FKSA1 IKW40N120H3FKSA1 INFINEON TECHNOLOGIES IKW40N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 160A
Power dissipation: 483W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 185nC
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Case: TO247-3
Collector-emitter voltage: 1.2kV
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.94 EUR
10+7.16 EUR
Mindestbestellmenge: 7
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IKW40N120H3FKSA1 IKW40N120H3FKSA1 Infineon Technologies IKW40N120H3_Rev1_2G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a304325305e6d012591d4832f7032 Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 355 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/290ns
Switching Energy: 4.4mJ
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 185 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 483 W
auf Bestellung 5405 Stücke:
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120+7.42 EUR
510+6.65 EUR
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IKW40N120T2 Infineon Trans IGBT Chip N-CH 1.2KV 75A IKW40N120T2FKSA1 IKW40N120T2 TIKW40n120t2
Anzahl je Verpackung: 5 Stücke
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5+23.71 EUR
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IKW40N120T2FKSA1 IKW40N120T2FKSA1 INFINEON TECHNOLOGIES IKW40N120T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 165A
Power dissipation: 480W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 192nC
Technology: TRENCHSTOP™
Case: TO247-3
Collector-emitter voltage: 1.2kV
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10+7.44 EUR
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IKW40N120T2FKSA1 IKW40N120T2FKSA1 INFINEON TECHNOLOGIES IKW40N120T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 165A
Power dissipation: 480W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 192nC
Technology: TRENCHSTOP™
Case: TO247-3
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 93 Stücke:
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IKW40N120T2FKSA1 IKW40N120T2FKSA1 Infineon Technologies IKW40N120T2_Rev2_2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426d87b3ad5 Description: IGBT TRENCH 1200V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 258 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: 33ns/314ns
Switching Energy: 5.25mJ
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 192 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 480 W
auf Bestellung 500 Stücke:
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2+16.56 EUR
30+9.78 EUR
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IKY140N120CH7XKSA1 IKY140N120CH7XKSA1 Infineon Technologies Infineon-IKY140N120CH7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c84a33f400184e1ecc5300a3d Description: IGBT TRENCH FS 1200V 232A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 140A
Supplier Device Package: PG-TO247-4-U10
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/407ns
Switching Energy: 2.64mJ (on), 3.9mJ (off)
Gate Charge: 1032 nC
Part Status: Active
Current - Collector (Ic) (Max): 232 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 560 A
Power - Max: 962 W
auf Bestellung 260 Stücke:
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IKY40N120CH3XKSA1 IKY40N120CH3XKSA1 Infineon Technologies Infineon-IKY40N120CH3-DS-v02_02-EN.pdf?fileId=5546d4625bd71aa0015bd81786540530 Description: IGBT 1200V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Supplier Device Package: PG-TO247-4
Td (on/off) @ 25°C: 30ns/280ns
Switching Energy: 2.18mJ (on), 1.3mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 190 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
auf Bestellung 223 Stücke:
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IKY40N120CS6XKSA1 IKY40N120CS6XKSA1 Infineon Technologies Infineon-IKY40N120CS6-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01638801f18416c3 Description: IGBT TRENCH FS 1200V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 255 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-4-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/315ns
Switching Energy: 1.45mJ (on), 1.55mJ (off)
Test Condition: 600V, 40A, 9Ohm, 15V
Gate Charge: 285 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
auf Bestellung 713 Stücke:
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2+13.82 EUR
30+8.04 EUR
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IKZA40N120CH7XKSA1 IKZA40N120CH7XKSA1 Infineon Technologies Infineon-IKZA40N120CH7-DataSheet-v01_20-EN.pdf?fileId=8ac78c8c84a33f400184e2a0dd1a2d53 Description: IGBT TRENCH FS 1200V 95A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-4-U02
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/360ns
Switching Energy: 970µJ (on), 1.01mJ (off)
Gate Charge: 290 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 330 W
auf Bestellung 128 Stücke:
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IKZA40N120CS7XKSA1 IKZA40N120CS7XKSA1 Infineon Technologies Infineon-IKZA40N120CS7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c850f4bee0185a5233ca273fe Description: IGBT
Packaging: Tube
Part Status: Active
auf Bestellung 126 Stücke:
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2+15.91 EUR
30+9.37 EUR
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IRG8P40N120KD-EPBF IRG8P40N120KD-EPBF International Rectifier IRSD-S-A0000034004-1.pdf?t.download=true&u=5oefqw Description: IGBT 1200V 60A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/245ns
Switching Energy: 1.6mJ (on), 1.8mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 240 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 305 W
auf Bestellung 10475 Stücke:
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IRG8P40N120KDPBF IRG8P40N120KDPBF International Rectifier IRSD-S-A0000034004-1.pdf?t.download=true&u=5oefqw Description: IGBT 1200V 60A TO-247AC
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 40ns/245ns
Switching Energy: 1.6mJ (on), 1.8mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 240 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 305 W
auf Bestellung 7936 Stücke:
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IXGH40N120C3D1 IXGH40N120C3D1 IXYS littelfuse_discrete_igbts_pt_ixgh40n120c3d1_datasheet.pdf.pdf Description: IGBT PT 1200V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/130ns
Switching Energy: 1.8mJ (on), 550µJ (off)
Test Condition: 600V, 30A, 3Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 380 W
auf Bestellung 285 Stücke:
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1+22.25 EUR
30+17.65 EUR
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IXYH40N120B3D1 IXYH40N120B3D1 IXYS littelfuse_discrete_igbts_xpt_ixyh40n120b3d1_datasheet.pdf.pdf Description: IGBT 1200V 86A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 22ns/177ns
Switching Energy: 2.7mJ (on), 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 480 W
auf Bestellung 580 Stücke:
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IXYH40N120B4H1 IXYH40N120B4H1 IXYS media?resourcetype=datasheets&itemid=7e1d21ef-b20d-41a8-bb73-2c403d23711e&filename=power_semiconductor_discrete_igbt_ixyh40n120b4h1_datasheet.pdf Description: IGBT TRENCH 1200V 112A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 430 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 32A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/220ns
Switching Energy: 5.9mJ (on), 2.9mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 112 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 600 W
auf Bestellung 274 Stücke:
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1+18.83 EUR
30+12.00 EUR
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IXYH40N120C3 IXYH40N120C3 IXYS littelfuse_discrete_igbts_xpt_ixyh40n120c3_datasheet.pdf.pdf Description: IGBT 1200V 70A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 24ns/125ns
Switching Energy: 3.9mJ (on), 660µJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 577 W
auf Bestellung 239 Stücke:
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IXYH40N120C4H1 IXYH40N120C4H1 IXYS media?resourcetype=datasheets&itemid=f9c3693f-e068-4b59-8ee0-1637360f9d13&filename=power_semiconductor_discrete_igbt_ixyh40n120c4h1_datasheet.pdf Description: IGBT TRENCH 1200V 110A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 380 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/140ns
Switching Energy: 5.55mJ (on), 1.55mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 92 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 680 W
auf Bestellung 295 Stücke:
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NGTB40N120FL3WG NGTB40N120FL3WG ONSEMI ngtb40n120fl3w-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Power dissipation: 227W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 212nC
Case: TO247-3
Collector-emitter voltage: 1.2kV
auf Bestellung 100 Stücke:
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7+11.04 EUR
10+7.19 EUR
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NGTB40N120FL3WG NGTB40N120FL3WG ONSEMI ngtb40n120fl3w-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Power dissipation: 227W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 212nC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 100 Stücke:
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10+7.19 EUR
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NGTB40N120FL3WG NGTB40N120FL3WG onsemi ngtb40n120fl3w-d.pdf Description: IGBT TRENCH FS 1200V 160A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 136 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/145ns
Switching Energy: 1.6mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 212 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 454 W
auf Bestellung 1694 Stücke:
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2+11.70 EUR
30+6.72 EUR
120+5.62 EUR
510+4.82 EUR
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NGTB40N120IHRWG NGTB40N120IHRWG onsemi ngtb40n120ihr-d.pdf Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 40A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/230ns
Switching Energy: 950µJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 225 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 384 W
auf Bestellung 31 Stücke:
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2+11.40 EUR
30+6.53 EUR
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NTBG040N120M3S NTBG040N120M3S onsemi NTBG040N120M3S-D.PDF Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
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800+8.30 EUR
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NTBG040N120M3S NTBG040N120M3S onsemi NTBG040N120M3S-D.PDF Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 1210 Stücke:
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1+17.74 EUR
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NTBG040N120SC1 NTBG040N120SC1 onsemi ntbg040n120sc1-d.pdf Description: SICFET N-CH 1200V 60A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
auf Bestellung 855 Stücke:
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1+35.87 EUR
10+27.00 EUR
100+21.79 EUR
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NTC040N120SC1 NTC040N120SC1 onsemi ntc040n120sc1-d.pdf Description: SIC MOS WAFER SALES 40MOHM 1200V
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V
auf Bestellung 17199 Stücke:
Lieferzeit 10-14 Tag (e)
819+20.35 EUR
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NTH4L040N120M3S NTH4L040N120M3S onsemi nth4l040n120m3s-d.pdf Description: SILICON CARBIDE (SIC) MOSFET ELI
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 668 Stücke:
Lieferzeit 10-14 Tag (e)
1+22.79 EUR
30+14.37 EUR
120+13.47 EUR
510+13.29 EUR
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NTH4L040N120SC1 NTH4L040N120SC1 onsemi nth4l040n120sc1-d.pdf Description: SICFET N-CH 1200V 58A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 319W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V
auf Bestellung 165 Stücke:
Lieferzeit 10-14 Tag (e)
1+30.22 EUR
30+22.93 EUR
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NTHL040N120M3S NTHL040N120M3S onsemi nthl040n120m3s-d.pdf Description: SIC MOS TO247-3L 40MOHM 1200V M3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 118178 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.55 EUR
30+11.07 EUR
120+9.43 EUR
510+9.29 EUR
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NTHL040N120SC1 NTHL040N120SC1 onsemi nthl040n120sc1-d.pdf Description: SICFET N-CH 1200V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V
auf Bestellung 1759 Stücke:
Lieferzeit 10-14 Tag (e)
1+36.24 EUR
30+23.38 EUR
120+21.38 EUR
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NVBG040N120M3S NVBG040N120M3S onsemi NVBG040N120M3S-D.PDF Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 18346 Stücke:
Lieferzeit 10-14 Tag (e)
1+33.09 EUR
10+23.67 EUR
100+18.60 EUR
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NVBG040N120M3S NVBG040N120M3S onsemi NVBG040N120M3S-D.PDF Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 17600 Stücke:
Lieferzeit 10-14 Tag (e)
800+18.60 EUR
Mindestbestellmenge: 800
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NVBG040N120SC1 NVBG040N120SC1 onsemi nvbg040n120sc1-d.pdf Description: TRANS SJT N-CH 1200V 60A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 19200 Stücke:
Lieferzeit 10-14 Tag (e)
800+28.43 EUR
Mindestbestellmenge: 800
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NVBG040N120SC1 NVBG040N120SC1 onsemi nvbg040n120sc1-d.pdf Description: TRANS SJT N-CH 1200V 60A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 20273 Stücke:
Lieferzeit 10-14 Tag (e)
1+43.98 EUR
10+33.65 EUR
100+28.43 EUR
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NVH4L040N120M3S NVH4L040N120M3S onsemi nvh4l040n120m3s-d.pdf Description: SIC MOS TO247-4L 40MOHM 1200V M3
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -3V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 1572 Stücke:
Lieferzeit 10-14 Tag (e)
1+33.95 EUR
30+24.98 EUR
120+23.83 EUR
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NVH4L040N120SC1 NVH4L040N120SC1 onsemi nvh4l040n120sc1-d.pdf Description: SICFET N-CH 1200V 58A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 319W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 221 Stücke:
Lieferzeit 10-14 Tag (e)
1+34.39 EUR
30+27.26 EUR
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BGH40N120HS1
BGH40N120HS1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Collector-emitter voltage: 1.2kV
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.97 EUR
8+9.01 EUR
9+8.52 EUR
Mindestbestellmenge: 6
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BGH40N120HS1
BGH40N120HS1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+12.97 EUR
8+9.01 EUR
9+8.52 EUR
Mindestbestellmenge: 6
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DACMI40N1200 DACMI40N1200.pdf
DACMI40N1200
Hersteller: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 25A; SOT227B; screw; SiC; screw
Polarisation: unipolar
Drain current: 25A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Operating temperature: -55...150°C
Case: SOT227B
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+63.66 EUR
Mindestbestellmenge: 2
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DACMI40N1200 DACMI40N1200.pdf
DACMI40N1200
Hersteller: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 25A; SOT227B; screw; SiC; screw
Polarisation: unipolar
Drain current: 25A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Operating temperature: -55...150°C
Case: SOT227B
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+63.66 EUR
Mindestbestellmenge: 2
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HGW40N120FHA
Hersteller: Watech Electronics
Description: 1200V 40A IGBT without FRD TO-2
Packaging: Tape & Box (TB)
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
600+15.16 EUR
Mindestbestellmenge: 600
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HKW40N120FHEI HKW40N120FHEIV2.0Release.pdf
HKW40N120FHEI
Hersteller: Watech Electronics
Description: IGBT 1200V 80A TO-247-3
Packaging: Tape & Box (TB)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 378 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 68ns/383ns
Switching Energy: 2.23mJ (on), 1.64mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 300 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 441 W
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
600+26.96 EUR
Mindestbestellmenge: 600
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HKW40N120FHEQ HKW40N120FHEQV1.0EN.pdf
HKW40N120FHEQ
Hersteller: Watech Electronics
Description: IGBT 1200V 80A TO-247-3
Packaging: Tape & Box (TB)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 153 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 75ns/320ns
Switching Energy: 2.48mJ (on), 1.31mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 307 nC
Grade: Automotive
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 441 W
Qualification: AEC-Q101
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
600+15.16 EUR
Mindestbestellmenge: 600
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HKW40N120FHRA HKW40N120FHRAV1.0EN.pdf
HKW40N120FHRA
Hersteller: Watech Electronics
Description: IGBT 1200V 80A TO-247-3
Packaging: Tape & Box (TB)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 90ns/362ns
Switching Energy: 1.55mJ (on), 1.68mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 307 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 441 W
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
600+15.16 EUR
Mindestbestellmenge: 600
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HKW40N120FPTA1 HKW40N120FPTA1V1.0EN.pdf
HKW40N120FPTA1
Hersteller: Watech Electronics
Description: IGBT FIELD STOP 1200V 82A TO-247
Packaging: Tape & Box (TB)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 390 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 68ns/274ns
Switching Energy: 2.92mJ (on), 2.84mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 296 nC
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 714 W
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
600+11.79 EUR
Mindestbestellmenge: 600
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IGW40N120H3FKSA1 IGW40N120H3-DTE.pdf
IGW40N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Power dissipation: 483W
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Case: TO247-3
Collector-emitter voltage: 1.2kV
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.19 EUR
13+5.51 EUR
14+5.21 EUR
Mindestbestellmenge: 10
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IGW40N120H3FKSA1 IGW40N120H3-DTE.pdf
IGW40N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Power dissipation: 483W
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 219 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.19 EUR
13+5.51 EUR
14+5.21 EUR
Mindestbestellmenge: 10
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IGW40N120H3FKSA1 DS_IG40N120H3_1_1_final.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a304325305e6d0125921b9364704d
IGW40N120H3FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/290ns
Switching Energy: 3.16mJ
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 185 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 483 W
auf Bestellung 5893 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.32 EUR
30+7.10 EUR
120+5.95 EUR
510+5.12 EUR
Mindestbestellmenge: 2
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IHW40N120R5XKSA1 IHW40N120R5.pdf
IHW40N120R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Turn-off time: 440ns
Power dissipation: 197W
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 310nC
Technology: TRENCHSTOP™ RC
Case: TO247-3
Collector-emitter voltage: 1.2kV
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.61 EUR
21+3.55 EUR
22+3.35 EUR
60+3.22 EUR
Mindestbestellmenge: 13
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IHW40N120R5XKSA1 IHW40N120R5.pdf
IHW40N120R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Turn-off time: 440ns
Power dissipation: 197W
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 310nC
Technology: TRENCHSTOP™ RC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 112 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
13+5.61 EUR
21+3.55 EUR
22+3.35 EUR
60+3.22 EUR
Mindestbestellmenge: 13
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IHW40N120R5XKSA1 Infineon-IHW40N120R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0f4a65430e9
IHW40N120R5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/420ns
Switching Energy: 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 394 W
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.48 EUR
Mindestbestellmenge: 3
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IKQ140N120CH7XKSA1 Infineon-IKQ140N120CH7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c84a33f400184e2a136c02d5f
IKQ140N120CH7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 175A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 144 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 140A
Supplier Device Package: PG-TO247-3-U01
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 68ns/541ns
Switching Energy: 8.84mJ (on), 3.38mJ (off)
Gate Charge: 970 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 560 A
Power - Max: 962 W
auf Bestellung 355 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+27.30 EUR
30+16.83 EUR
120+14.54 EUR
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IKQ40N120CH3XKSA1 Infineon-IKQ40N120CH3-DS-v02_02-EN.pdf?fileId=5546d4625bd71aa0015bd817be8a0538
IKQ40N120CH3XKSA1
Hersteller: Infineon Technologies
Description: IGBT 1200V 80A TO247-3-46
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Supplier Device Package: PG-TO247-3-46
Td (on/off) @ 25°C: 30ns/300ns
Switching Energy: 3.3mJ (on), 1.3mJ (off)
Test Condition: 400V, 40A, 12Ohm, 15V
Gate Charge: 190 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
auf Bestellung 445 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.84 EUR
30+8.69 EUR
120+7.34 EUR
Mindestbestellmenge: 2
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IKQ40N120CT2XKSA1 Infineon-IKQ40N120CT2-DS-v02_02-EN.pdf?fileId=5546d4625bd71aa0015c0be021fb0a7d
IKQ40N120CT2XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/328ns
Switching Energy: 3.1mJ (on), 2.9mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 190 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
auf Bestellung 225 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.59 EUR
30+11.09 EUR
120+9.44 EUR
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IKW40N120CH7XKSA1 Infineon-IKW40N120CH7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c84a33f400184e2a17ad12da3
IKW40N120CH7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 82A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-U06
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/336ns
Switching Energy: 1.69mJ (on), 920µJ (off)
Gate Charge: 290 nC
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 330 W
auf Bestellung 282 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.63 EUR
30+6.68 EUR
120+5.59 EUR
Mindestbestellmenge: 2
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IKW40N120CS6XKSA1 IKW40N120CS6.pdf
IKW40N120CS6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Power dissipation: 250W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 285nC
Technology: TRENCHSTOP™ 6
Case: TO247-3
Collector-emitter voltage: 1.2kV
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+7.11 EUR
15+4.88 EUR
16+4.60 EUR
Mindestbestellmenge: 11
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IKW40N120CS6XKSA1 IKW40N120CS6.pdf
IKW40N120CS6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Power dissipation: 250W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 285nC
Technology: TRENCHSTOP™ 6
Case: TO247-3
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 63 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+7.11 EUR
15+4.88 EUR
16+4.60 EUR
510+4.43 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120CS6XKSA1 Infineon-IKW40N120CS6-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01638801e23716c0
IKW40N120CS6XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 400 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/315ns
Switching Energy: 2.55mJ (on), 1.55mJ (off)
Test Condition: 600V, 40A, 9Ohm, 15V
Gate Charge: 285 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
auf Bestellung 510 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.25 EUR
30+7.69 EUR
120+6.46 EUR
510+5.65 EUR
Mindestbestellmenge: 2
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IKW40N120CS7XKSA1 Infineon-IKW40N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d952805a0
IKW40N120CS7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 82A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 175 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/190ns
Switching Energy: 2.55mJ (on), 1.75mJ (off)
Test Condition: 600V, 40A, 4Ohm, 15V
Gate Charge: 230 nC
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 357 W
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.33 EUR
30+8.36 EUR
120+7.05 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120H3
Hersteller: Infineon
Transistor IGBT ; 1200V; 20V; 80A; 160A; 483W; 5,0V~6,5V; 185nC; -40°C~175°C;   IKW40N120H3 TIKW40n120h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+17.84 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120H3FKSA1 IKW40N120H3-DTE.pdf
IKW40N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 160A
Power dissipation: 483W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 185nC
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Case: TO247-3
Collector-emitter voltage: 1.2kV
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.94 EUR
10+7.16 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120H3FKSA1 IKW40N120H3_Rev1_2G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a304325305e6d012591d4832f7032
IKW40N120H3FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 355 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/290ns
Switching Energy: 4.4mJ
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 185 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 483 W
auf Bestellung 5405 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.00 EUR
30+8.78 EUR
120+7.42 EUR
510+6.65 EUR
Mindestbestellmenge: 2
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IKW40N120T2
Hersteller: Infineon
Trans IGBT Chip N-CH 1.2KV 75A IKW40N120T2FKSA1 IKW40N120T2 TIKW40n120t2
Anzahl je Verpackung: 5 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+23.71 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120T2FKSA1 IKW40N120T2.pdf
IKW40N120T2FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 165A
Power dissipation: 480W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 192nC
Technology: TRENCHSTOP™
Case: TO247-3
Collector-emitter voltage: 1.2kV
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.27 EUR
10+7.44 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120T2FKSA1 IKW40N120T2.pdf
IKW40N120T2FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 165A
Power dissipation: 480W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 192nC
Technology: TRENCHSTOP™
Case: TO247-3
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 93 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+10.27 EUR
10+7.44 EUR
120+7.15 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120T2FKSA1 IKW40N120T2_Rev2_2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426d87b3ad5
IKW40N120T2FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 1200V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 258 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: 33ns/314ns
Switching Energy: 5.25mJ
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 192 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 480 W
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.56 EUR
30+9.78 EUR
120+8.30 EUR
Mindestbestellmenge: 2
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IKY140N120CH7XKSA1 Infineon-IKY140N120CH7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c84a33f400184e1ecc5300a3d
IKY140N120CH7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 232A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 140A
Supplier Device Package: PG-TO247-4-U10
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/407ns
Switching Energy: 2.64mJ (on), 3.9mJ (off)
Gate Charge: 1032 nC
Part Status: Active
Current - Collector (Ic) (Max): 232 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 560 A
Power - Max: 962 W
auf Bestellung 260 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+23.09 EUR
30+14.03 EUR
120+12.04 EUR
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IKY40N120CH3XKSA1 Infineon-IKY40N120CH3-DS-v02_02-EN.pdf?fileId=5546d4625bd71aa0015bd81786540530
IKY40N120CH3XKSA1
Hersteller: Infineon Technologies
Description: IGBT 1200V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Supplier Device Package: PG-TO247-4
Td (on/off) @ 25°C: 30ns/280ns
Switching Energy: 2.18mJ (on), 1.3mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 190 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
auf Bestellung 223 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.12 EUR
30+9.51 EUR
120+8.05 EUR
Mindestbestellmenge: 2
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IKY40N120CS6XKSA1 Infineon-IKY40N120CS6-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01638801f18416c3
IKY40N120CS6XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 255 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-4-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/315ns
Switching Energy: 1.45mJ (on), 1.55mJ (off)
Test Condition: 600V, 40A, 9Ohm, 15V
Gate Charge: 285 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
auf Bestellung 713 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.82 EUR
30+8.04 EUR
120+6.77 EUR
510+5.97 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IKZA40N120CH7XKSA1 Infineon-IKZA40N120CH7-DataSheet-v01_20-EN.pdf?fileId=8ac78c8c84a33f400184e2a0dd1a2d53
IKZA40N120CH7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 95A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-4-U02
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/360ns
Switching Energy: 970µJ (on), 1.01mJ (off)
Gate Charge: 290 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 330 W
auf Bestellung 128 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.01 EUR
30+8.79 EUR
120+7.43 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IKZA40N120CS7XKSA1 Infineon-IKZA40N120CS7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c850f4bee0185a5233ca273fe
IKZA40N120CS7XKSA1
Hersteller: Infineon Technologies
Description: IGBT
Packaging: Tube
Part Status: Active
auf Bestellung 126 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.91 EUR
30+9.37 EUR
120+7.93 EUR
Mindestbestellmenge: 2
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IRG8P40N120KD-EPBF IRSD-S-A0000034004-1.pdf?t.download=true&u=5oefqw
IRG8P40N120KD-EPBF
Hersteller: International Rectifier
Description: IGBT 1200V 60A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/245ns
Switching Energy: 1.6mJ (on), 1.8mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 240 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 305 W
auf Bestellung 10475 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+9.18 EUR
Mindestbestellmenge: 56
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IRG8P40N120KDPBF IRSD-S-A0000034004-1.pdf?t.download=true&u=5oefqw
IRG8P40N120KDPBF
Hersteller: International Rectifier
Description: IGBT 1200V 60A TO-247AC
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 40ns/245ns
Switching Energy: 1.6mJ (on), 1.8mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 240 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 305 W
auf Bestellung 7936 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+8.66 EUR
Mindestbestellmenge: 59
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IXGH40N120C3D1 littelfuse_discrete_igbts_pt_ixgh40n120c3d1_datasheet.pdf.pdf
IXGH40N120C3D1
Hersteller: IXYS
Description: IGBT PT 1200V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/130ns
Switching Energy: 1.8mJ (on), 550µJ (off)
Test Condition: 600V, 30A, 3Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 380 W
auf Bestellung 285 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.25 EUR
30+17.65 EUR
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IXYH40N120B3D1 littelfuse_discrete_igbts_xpt_ixyh40n120b3d1_datasheet.pdf.pdf
IXYH40N120B3D1
Hersteller: IXYS
Description: IGBT 1200V 86A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 22ns/177ns
Switching Energy: 2.7mJ (on), 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 480 W
auf Bestellung 580 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.90 EUR
30+13.91 EUR
120+11.94 EUR
510+11.57 EUR
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IXYH40N120B4H1 media?resourcetype=datasheets&itemid=7e1d21ef-b20d-41a8-bb73-2c403d23711e&filename=power_semiconductor_discrete_igbt_ixyh40n120b4h1_datasheet.pdf
IXYH40N120B4H1
Hersteller: IXYS
Description: IGBT TRENCH 1200V 112A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 430 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 32A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/220ns
Switching Energy: 5.9mJ (on), 2.9mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 112 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 600 W
auf Bestellung 274 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.83 EUR
30+12.00 EUR
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IXYH40N120C3 littelfuse_discrete_igbts_xpt_ixyh40n120c3_datasheet.pdf.pdf
IXYH40N120C3
Hersteller: IXYS
Description: IGBT 1200V 70A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 24ns/125ns
Switching Energy: 3.9mJ (on), 660µJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 577 W
auf Bestellung 239 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.35 EUR
30+12.24 EUR
120+10.46 EUR
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IXYH40N120C4H1 media?resourcetype=datasheets&itemid=f9c3693f-e068-4b59-8ee0-1637360f9d13&filename=power_semiconductor_discrete_igbt_ixyh40n120c4h1_datasheet.pdf
IXYH40N120C4H1
Hersteller: IXYS
Description: IGBT TRENCH 1200V 110A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 380 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/140ns
Switching Energy: 5.55mJ (on), 1.55mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 92 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 680 W
auf Bestellung 295 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.60 EUR
30+10.45 EUR
120+8.89 EUR
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NGTB40N120FL3WG ngtb40n120fl3w-d.pdf
NGTB40N120FL3WG
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Power dissipation: 227W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 212nC
Case: TO247-3
Collector-emitter voltage: 1.2kV
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.04 EUR
10+7.19 EUR
Mindestbestellmenge: 7
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NGTB40N120FL3WG ngtb40n120fl3w-d.pdf
NGTB40N120FL3WG
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Power dissipation: 227W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 212nC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+11.04 EUR
10+7.19 EUR
Mindestbestellmenge: 7
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NGTB40N120FL3WG ngtb40n120fl3w-d.pdf
NGTB40N120FL3WG
Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 160A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 136 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/145ns
Switching Energy: 1.6mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 212 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 454 W
auf Bestellung 1694 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.70 EUR
30+6.72 EUR
120+5.62 EUR
510+4.82 EUR
1020+4.79 EUR
Mindestbestellmenge: 2
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NGTB40N120IHRWG ngtb40n120ihr-d.pdf
NGTB40N120IHRWG
Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 40A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/230ns
Switching Energy: 950µJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 225 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 384 W
auf Bestellung 31 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.40 EUR
30+6.53 EUR
Mindestbestellmenge: 2
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NTBG040N120M3S NTBG040N120M3S-D.PDF
NTBG040N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+8.30 EUR
Mindestbestellmenge: 800
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NTBG040N120M3S NTBG040N120M3S-D.PDF
NTBG040N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 1210 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.74 EUR
10+12.25 EUR
100+9.14 EUR
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NTBG040N120SC1 ntbg040n120sc1-d.pdf
NTBG040N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 60A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
auf Bestellung 855 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+35.87 EUR
10+27.00 EUR
100+21.79 EUR
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NTC040N120SC1 ntc040n120sc1-d.pdf
NTC040N120SC1
Hersteller: onsemi
Description: SIC MOS WAFER SALES 40MOHM 1200V
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V
auf Bestellung 17199 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
819+20.35 EUR
Mindestbestellmenge: 819
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NTH4L040N120M3S nth4l040n120m3s-d.pdf
NTH4L040N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET ELI
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 668 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.79 EUR
30+14.37 EUR
120+13.47 EUR
510+13.29 EUR
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NTH4L040N120SC1 nth4l040n120sc1-d.pdf
NTH4L040N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 58A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 319W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V
auf Bestellung 165 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+30.22 EUR
30+22.93 EUR
120+21.68 EUR
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NTHL040N120M3S nthl040n120m3s-d.pdf
NTHL040N120M3S
Hersteller: onsemi
Description: SIC MOS TO247-3L 40MOHM 1200V M3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 118178 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.55 EUR
30+11.07 EUR
120+9.43 EUR
510+9.29 EUR
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NTHL040N120SC1 nthl040n120sc1-d.pdf
NTHL040N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V
auf Bestellung 1759 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+36.24 EUR
30+23.38 EUR
120+21.38 EUR
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NVBG040N120M3S NVBG040N120M3S-D.PDF
NVBG040N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 18346 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33.09 EUR
10+23.67 EUR
100+18.60 EUR
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NVBG040N120M3S NVBG040N120M3S-D.PDF
NVBG040N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 17600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+18.60 EUR
Mindestbestellmenge: 800
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NVBG040N120SC1 nvbg040n120sc1-d.pdf
NVBG040N120SC1
Hersteller: onsemi
Description: TRANS SJT N-CH 1200V 60A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 19200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+28.43 EUR
Mindestbestellmenge: 800
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NVBG040N120SC1 nvbg040n120sc1-d.pdf
NVBG040N120SC1
Hersteller: onsemi
Description: TRANS SJT N-CH 1200V 60A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 20273 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+43.98 EUR
10+33.65 EUR
100+28.43 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVH4L040N120M3S nvh4l040n120m3s-d.pdf
NVH4L040N120M3S
Hersteller: onsemi
Description: SIC MOS TO247-4L 40MOHM 1200V M3
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -3V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 1572 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33.95 EUR
30+24.98 EUR
120+23.83 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVH4L040N120SC1 nvh4l040n120sc1-d.pdf
NVH4L040N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 58A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 319W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 221 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34.39 EUR
30+27.26 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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