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BSB056N10NN3GXUMA1 BSB056N10NN3GXUMA1 Infineon Technologies BSB056N10NN3+G_Rev+2.4_.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30442e152e91012e390b9a631459 Description: MOSFET N-CH 100V 9A/83A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 83A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 50 V
auf Bestellung 1429 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.37 EUR
10+4.17 EUR
100+2.92 EUR
500+2.39 EUR
1000+2.22 EUR
Mindestbestellmenge: 3
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BSB165N15NZ3 G BSB165N15NZ3 G Infineon Technologies BSB165N15NZ3+G+Rev+2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432e779412012e7b04a1353843 Description: MOSFET N-CH 150V 9A WDSON-2
auf Bestellung 9105 Stücke:
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BSB280N15NZ3GXUMA1 BSB280N15NZ3GXUMA1 Infineon Technologies BSB280N15NZ3+G+Rev+2.4_.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432e779412012e7b0b544c3852 Description: MOSFET N-CH 150V 9A/30A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V
Produkt ist nicht verfügbar
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BSC009NE2LSATMA1 BSC009NE2LSATMA1 Infineon Technologies infineon-bsc009ne2ls-datasheet-en.pdf?fileId=db3a304332d040720132dd4232240e1d Description: MOSFET N-CH 25V 41A/255A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 255A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 12 V
auf Bestellung 2110 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.12 EUR
10+1.99 EUR
100+1.35 EUR
500+1.07 EUR
1000+1.01 EUR
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BSC010NE2LSIATMA1 BSC010NE2LSIATMA1 Infineon Technologies BSC010NE2LSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f01308d8d1cdf33de Description: MOSFET N-CH 25V 38A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 12 V
auf Bestellung 6525 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.4 EUR
10+2.17 EUR
100+1.47 EUR
500+1.18 EUR
1000+1.13 EUR
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BSC011N03LSIATMA1 BSC011N03LSIATMA1 Infineon Technologies BSC011N03LSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f013097dfdcc22f66 Description: MOSFET N-CH 30V 37A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
auf Bestellung 14057 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.13 EUR
10+2 EUR
100+1.35 EUR
500+1.07 EUR
1000+1.02 EUR
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BSC014NE2LSIATMA1 BSC014NE2LSIATMA1 Infineon Technologies BSC014NE2LSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f013093b0024571b1 Description: MOSFET N-CH 25V 33A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 12 V
auf Bestellung 11218 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.04 EUR
10+1.94 EUR
100+1.31 EUR
500+1.04 EUR
1000+0.98 EUR
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BSC018NE2LSIATMA1 BSC018NE2LSIATMA1 Infineon Technologies BSC018NE2LSI_Rev+2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f013093b8abf971c2 Description: MOSFET N-CH 25V 29A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 12 V
auf Bestellung 9250 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.38 EUR
10+1.94 EUR
100+1.51 EUR
500+1.28 EUR
1000+1.04 EUR
2000+0.98 EUR
Mindestbestellmenge: 8
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BSC024NE2LSATMA1 BSC024NE2LSATMA1 Infineon Technologies BSC024NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012ca76f4fe52f6b Description: MOSFET N-CH 25V 25A/110A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 12 V
auf Bestellung 12371 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.02 EUR
14+1.34 EUR
100+0.96 EUR
500+0.81 EUR
1000+0.69 EUR
2000+0.68 EUR
Mindestbestellmenge: 9
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BSC032NE2LSATMA1 BSC032NE2LSATMA1 Infineon Technologies BSC032NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ed8c328633851 Description: MOSFET N-CH 25V 22A/84A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 84A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 12 V
auf Bestellung 1558 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.57 EUR
100+0.52 EUR
500+0.5 EUR
Mindestbestellmenge: 31
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BSC050NE2LSATMA1 BSC050NE2LSATMA1 Infineon Technologies BSC050NE2LS_Rev+2.1_.pdf?folderId=db3a304326dfb1300126fb3bec803f1a&fileId=db3a304326dfb1300126fb5ce0cb3f2d Description: MOSFET N-CH 25V 39A/58A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 12 V
auf Bestellung 6523 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.57 EUR
18+0.98 EUR
100+0.64 EUR
500+0.49 EUR
1000+0.45 EUR
2000+0.41 EUR
Mindestbestellmenge: 12
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BSC052N03LSATMA1 BSC052N03LSATMA1 Infineon Technologies BSC052N03LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cbc1084350363 Description: MOSFET N-CH 30V 17A/57A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
auf Bestellung 24885 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.6 EUR
18+1 EUR
100+0.67 EUR
500+0.52 EUR
Mindestbestellmenge: 11
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BSC060P03NS3EGATMA1 BSC060P03NS3EGATMA1 Infineon Technologies BSC060P03NS3E+G_2.1.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304320896aa20120adcbe71367cb Description: MOSFET P-CH 30V 17.7/100A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 150µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 15 V
auf Bestellung 6786 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.24 EUR
13+1.41 EUR
100+0.94 EUR
500+0.73 EUR
1000+0.67 EUR
2000+0.64 EUR
Mindestbestellmenge: 8
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BSC070N10NS3GATMA1 BSC070N10NS3GATMA1 Infineon Technologies BSC070N10NS3+Rev2+1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304327b89750012824712c6c6f2f Description: MOSFET N-CH 100V 90A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 75µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V
auf Bestellung 19135 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.22 EUR
10+2.06 EUR
100+1.4 EUR
500+1.11 EUR
1000+1.06 EUR
Mindestbestellmenge: 6
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BSD235CH6327XTSA1 BSD235CH6327XTSA1 Infineon Technologies BSD235C_rev2.3.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433580b371013585a2d0d53326 Description: MOSFET N/P-CH 20V 0.95A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 950mA, 530mA
Input Capacitance (Ciss) (Max) @ Vds: 47pF @ 10V
Rds On (Max) @ Id, Vgs: 350mOhm @ 950mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
auf Bestellung 26580 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
41+0.44 EUR
100+0.23 EUR
500+0.21 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
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BSD235NH6327XTSA1 BSD235NH6327XTSA1 Infineon Technologies BSD235N_Rev2.3.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011afc70075c04e0 Description: MOSFET 2N-CH 20V 0.95A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 950mA
Input Capacitance (Ciss) (Max) @ Vds: 63pF @ 10V
Rds On (Max) @ Id, Vgs: 350mOhm @ 950mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.32nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
Supplier Device Package: PG-SOT363-PO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 51172 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
43+0.42 EUR
100+0.19 EUR
500+0.18 EUR
1000+0.17 EUR
Mindestbestellmenge: 25
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BSD314SPEL6327HTSA1 BSD314SPEL6327HTSA1 Infineon Technologies BSD314SPE.pdf Description: MOSFET P-CH 30V 1.5A SOT363
Produkt ist nicht verfügbar
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BSD840NH6327XTSA1 BSD840NH6327XTSA1 Infineon Technologies BSD840N_Rev2.3_.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431b0626df011b12b4486c7c02 Description: MOSFET 2N-CH 20V 0.88A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 880mA
Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 880mA, 2.5V
Gate Charge (Qg) (Max) @ Vgs: 0.26nC @ 2.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 750mV @ 1.6µA
Supplier Device Package: PG-SOT363-PO
Part Status: Active
auf Bestellung 2239 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.6 EUR
49+0.36 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 30
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BSL207NL6327HTSA1 BSL207NL6327HTSA1 Infineon Technologies BSL207N_Rev2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011aee15c15b0376 Description: MOSFET 2N-CH 20V 2.1A TSOP6-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-TSOP6-6
Produkt ist nicht verfügbar
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BSL308PEL6327HTSA1 BSL308PEL6327HTSA1 Infineon Technologies BSL308PE_Rev2.02.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a30431d8a6b3c011d8ff3592c03d0 Description: MOSFET 2P-CH 30V 2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 11µA
Supplier Device Package: PG-TSOP6-6
Part Status: Obsolete
Produkt ist nicht verfügbar
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BSL806NL6327HTSA1 BSL806NL6327HTSA1 Infineon Technologies Infineon-BSL806N-DS-v02_03-en.pdf?fileId=db3a30431b0626df011b128dcbe37bb1 Description: MOSFET 2N-CH 20V 2.3A 6TSOP
Produkt ist nicht verfügbar
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BSP320SL6327HTSA1 BSP320SL6327HTSA1 Infineon Technologies BSP320S.pdf Description: MOSFET N-CH 60V 2.9A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS126H6906XTSA1 BSS126H6906XTSA1 Infineon Technologies BSS126_Rev2.0_.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f6860601310483af163eba Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 44082 Stücke:
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19+0.98 EUR
100+0.64 EUR
500+0.49 EUR
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BSS131H6327XTSA1 BSS131H6327XTSA1 Infineon Technologies BSS131_V2.5+G.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f68606013104bf65993eeb Description: MOSFET N-CH 240V 110MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 56µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 77 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 14749 Stücke:
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100+0.22 EUR
500+0.16 EUR
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BSS139H6327XTSA1 BSS139H6327XTSA1 Infineon Technologies INFNS19226-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 250V 100MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 100µA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 56µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 59588 Stücke:
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100+0.37 EUR
500+0.28 EUR
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BSS159NH6906XTSA1 BSS159NH6906XTSA1 Infineon Technologies Infineon-BSS159N-DS-v02_02-en.pdf?fileId=db3a304330f68606013108d8b2230036 Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 160mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 26µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 37124 Stücke:
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BSS159NL6906HTSA1 BSS159NL6906HTSA1 Infineon Technologies BSS159N.pdf Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 160mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 26µA
Supplier Device Package: PG-SOT23
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 25 V
Produkt ist nicht verfügbar
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BSS169L6906HTSA1 BSS169L6906HTSA1 Infineon Technologies BSS169.pdf Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 25 V
Produkt ist nicht verfügbar
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BSS205NH6327XTSA1 BSS205NH6327XTSA1 Infineon Technologies BSS205N_Rev2.4.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f686060131091244950062 Description: MOSFET N-CH 20V 2.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 419 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 24184 Stücke:
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32+0.56 EUR
54+0.33 EUR
123+0.14 EUR
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BSS214NH6327XTSA1 BSS214NH6327XTSA1 Infineon Technologies BSS214N_Rev2.3.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f6860601311828a70444e9 Description: MOSFET N-CH 20V 1.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 177143 Stücke:
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35+0.51 EUR
71+0.25 EUR
103+0.17 EUR
500+0.14 EUR
1000+0.13 EUR
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BSS215PH6327XTSA1 BSS215PH6327XTSA1 Infineon Technologies BSS215P_Rev2.3.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304330f6860601311833f57144fb Description: MOSFET P-CH 20V 1.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 126442 Stücke:
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29+0.62 EUR
41+0.43 EUR
100+0.27 EUR
500+0.19 EUR
1000+0.16 EUR
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BSS306NH6327XTSA1 BSS306NH6327XTSA1 Infineon Technologies BSS306N_Rev2.3.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f686060130ff4c1f867ef5 Description: MOSFET N-CH 30V 2.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 85503 Stücke:
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32+0.56 EUR
61+0.29 EUR
100+0.2 EUR
500+0.19 EUR
1000+0.17 EUR
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BSS308PEH6327XTSA1 BSS308PEH6327XTSA1 Infineon Technologies BSS308PE_Rev2.03.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304330f686060131099c80400073 Description: MOSFET P-CH 30V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 207979 Stücke:
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28+0.65 EUR
47+0.38 EUR
100+0.24 EUR
500+0.19 EUR
1000+0.17 EUR
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BSS314PEH6327XTSA1 BSS314PEH6327XTSA1 Infineon Technologies BSS314PE_rev2.2.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304330f68606013109b696aa0084 Description: MOSFET P-CH 30V 1.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 6.3µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 55595 Stücke:
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32+0.56 EUR
51+0.35 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.14 EUR
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BSS315PH6327XTSA1 BSS315PH6327XTSA1 Infineon Technologies BSS315P_Rev2.3.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304330f686060130ff61f31b7f06 Description: MOSFET P-CH 30V 1.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 282 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 75509 Stücke:
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28+0.63 EUR
45+0.39 EUR
100+0.25 EUR
500+0.18 EUR
1000+0.15 EUR
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BSS316NH6327XTSA1 BSS316NH6327XTSA1 Infineon Technologies BSS316N_Rev2.3.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f686060130ff7ee4b07f16 Description: MOSFET N-CH 30V 1.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 94 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 431321 Stücke:
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117+0.15 EUR
190+0.093 EUR
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BSS670S2LH6327XTSA1 BSS670S2LH6327XTSA1 Infineon Technologies BSS670S2L_Rev2.5.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f68606013109e4a7fb0094 Description: MOSFET N-CH 55V 540MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 270mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 2.7µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 2.26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 70837 Stücke:
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39+0.46 EUR
67+0.27 EUR
120+0.15 EUR
500+0.13 EUR
1000+0.12 EUR
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BSS806NH6327XTSA1 BSS806NH6327XTSA1 Infineon Technologies BSS806N_Rev2.3_.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f686060131185f0553451c Description: MOSFET N-CH 20V 2.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 750mV @ 11µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 479736 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.56 EUR
51+0.35 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.14 EUR
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BSS83PH6327XTSA1 BSS83PH6327XTSA1 Infineon Technologies BSS83P%20H6327.pdf Description: MOSFET P-CH 60V 330MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 330mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 107561 Stücke:
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47+0.38 EUR
100+0.24 EUR
500+0.18 EUR
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BSV236SPH6327XTSA1 BSV236SPH6327XTSA1 Infineon Technologies dgdl?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a30433580b37101358600cb67339f Description: MOSFET P-CH 20V 1.5A SOT363-6
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 560mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 8µA
Supplier Device Package: PG-SOT363-PO
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 8386 Stücke:
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26+0.69 EUR
43+0.42 EUR
100+0.26 EUR
500+0.2 EUR
1000+0.18 EUR
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IPL60R299CPAUMA1 IPL60R299CPAUMA1 Infineon Technologies IPL60R299CP_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043284aacd801285d1c1c8e27f4 Description: MOSFET N-CH 600V 11.1A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
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SN7002N H6327 SN7002N H6327 Infineon Technologies SN7002N_Rev2.6_.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f6860601311934e76045d5 Description: MOSFET N-CH 60V 200MA SOT23
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BSC0901NSI BSC0901NSI Infineon Technologies BSC0901NSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f2aa7bdc30067 Description: MOSFET N-CH 30V 28A 8TDSON
auf Bestellung 7499 Stücke:
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BSC0904NSI BSC0904NSI Infineon Technologies BSC0904NSI_Rev+2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f3073397339ef Description: MOSFET N-CH 30V 20A 8TDSON
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BSC22DN20NS3 G BSC22DN20NS3 G Infineon Technologies BSC22DN20NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b1582d2df1a48 Description: MOSFET N-CH 200V 7A 8TDSON
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BSC883N03MSGATMA1 BSC883N03MSGATMA1 Infineon Technologies BSC883N03MS_G.pdf Description: MOSFET N-CH 34V 19A TDSON-8
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BSF030NE2LQ BSF030NE2LQ Infineon Technologies BSF030NE2LQ_Rev+2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e398416012e47a8f0792588 Description: MOSFET N-CH 25V 24A WDSON-2
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BSF077N06NT3GXUMA1 BSF077N06NT3GXUMA1 Infineon Technologies BSF077N06NT3_G.pdf Description: MOSFET N-CH 60V 13A WDSON-2
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BSO301SP H BSO301SP H Infineon Technologies BSO301SP_Rev1+32.pdf?folderId=db3a304314dca38901154a7313d21a66&fileId=db3a304326c2768b0126d226cd5d68ac Description: MOSFET P-CH 30V 12.6A 8DSO
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BSZ018NE2LS BSZ018NE2LS Infineon Technologies BSZ018NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ee77f32012f072b132a57fc Description: MOSFET N-CH 25V 23A TSDSON-8
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IPB037N06N3 G IPB037N06N3 G Infineon Technologies IPB037N06N3+G+_Rev1.01.pdf?folderId=db3a3043163797a6011637c252b10018&fileId=db3a304317a7483601182c2d4f447647 Description: MOSFET N-CH 60V 90A TO263-3
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IPB049N06L3GATMA1 IPB049N06L3GATMA1 Infineon Technologies IPx049,52N06L3_G.pdf Description: MOSFET N-CH 60V 80A TO263-3
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IPB097N08N3 G IPB097N08N3 G Infineon Technologies IPP_I_B100N08N3_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ddc9372011e071f53b82619 Description: MOSFET N-CH 80V 70A TO263-3
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IPB60R385CP IPB60R385CP Infineon Technologies IPB60R385CP_rev2.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e836749df Description: MOSFET N-CH 600V 9A TO-263
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IPB60R950C6 IPB60R950C6 Infineon Technologies IPB60R950C6_2_1.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a30432239cccd0122a8282c217d66 Description: MOSFET N-CH 600V 4.4A TO263
auf Bestellung 2373 Stücke:
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IPB65R660CFD IPB65R660CFD Infineon Technologies IPA65R660CFD2.41.pdf?folderId=db3a3043163797a6011637d4e912003c&fileId=db3a30432e0bea21012e14dccc656df9 Description: MOSFET N-CH 650V 6A TO263
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IPD068P03L3 G IPD068P03L3 G Infineon Technologies Infineon-IPD068P03L3_G-DS-v02_01-en.pdf?fileId=db3a30432313ff5e01232cc234f07d94 Description: MOSFET P-CH 30V 70A TO252-3
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IPD60R520C6 IPD60R520C6 Infineon Technologies Infineon-IPD60R520C6-DS-v02_02-EN.pdf?fileId=db3a30433ee50ba8013eeb469c71164a Description: MOSFET N-CH 600V 8.1A TO252
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IPD65R600C6 IPD65R600C6 Infineon Technologies Infineon-IPD65R600C6-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433f1b26e8013f2ceafdee37c4 Description: MOSFET N-CH 650V 7.3A TO252
auf Bestellung 7909 Stücke:
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BSB165N15NZ3 G BSB165N15NZ3 G Infineon Technologies BSB165N15NZ3+G+Rev+2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432e779412012e7b04a1353843 Description: MOSFET N-CH 150V 9A WDSON-2
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BSB056N10NN3GXUMA1 BSB056N10NN3+G_Rev+2.4_.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30442e152e91012e390b9a631459
BSB056N10NN3GXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 9A/83A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 83A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 50 V
auf Bestellung 1429 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.37 EUR
10+4.17 EUR
100+2.92 EUR
500+2.39 EUR
1000+2.22 EUR
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BSB165N15NZ3 G BSB165N15NZ3+G+Rev+2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432e779412012e7b04a1353843
BSB165N15NZ3 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 9A WDSON-2
auf Bestellung 9105 Stücke:
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BSB280N15NZ3GXUMA1 BSB280N15NZ3+G+Rev+2.4_.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432e779412012e7b0b544c3852
BSB280N15NZ3GXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 9A/30A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V
Produkt ist nicht verfügbar
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BSC009NE2LSATMA1 infineon-bsc009ne2ls-datasheet-en.pdf?fileId=db3a304332d040720132dd4232240e1d
BSC009NE2LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 41A/255A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 255A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 12 V
auf Bestellung 2110 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.12 EUR
10+1.99 EUR
100+1.35 EUR
500+1.07 EUR
1000+1.01 EUR
Mindestbestellmenge: 6
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BSC010NE2LSIATMA1 BSC010NE2LSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f01308d8d1cdf33de
BSC010NE2LSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 38A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 12 V
auf Bestellung 6525 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.4 EUR
10+2.17 EUR
100+1.47 EUR
500+1.18 EUR
1000+1.13 EUR
Mindestbestellmenge: 6
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BSC011N03LSIATMA1 BSC011N03LSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f013097dfdcc22f66
BSC011N03LSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 37A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
auf Bestellung 14057 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.13 EUR
10+2 EUR
100+1.35 EUR
500+1.07 EUR
1000+1.02 EUR
Mindestbestellmenge: 6
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BSC014NE2LSIATMA1 BSC014NE2LSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f013093b0024571b1
BSC014NE2LSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 33A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 12 V
auf Bestellung 11218 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.04 EUR
10+1.94 EUR
100+1.31 EUR
500+1.04 EUR
1000+0.98 EUR
Mindestbestellmenge: 6
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BSC018NE2LSIATMA1 BSC018NE2LSI_Rev+2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f013093b8abf971c2
BSC018NE2LSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 29A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 12 V
auf Bestellung 9250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.38 EUR
10+1.94 EUR
100+1.51 EUR
500+1.28 EUR
1000+1.04 EUR
2000+0.98 EUR
Mindestbestellmenge: 8
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BSC024NE2LSATMA1 BSC024NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012ca76f4fe52f6b
BSC024NE2LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 25A/110A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 12 V
auf Bestellung 12371 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.02 EUR
14+1.34 EUR
100+0.96 EUR
500+0.81 EUR
1000+0.69 EUR
2000+0.68 EUR
Mindestbestellmenge: 9
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BSC032NE2LSATMA1 BSC032NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ed8c328633851
BSC032NE2LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 22A/84A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 84A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 12 V
auf Bestellung 1558 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.57 EUR
100+0.52 EUR
500+0.5 EUR
Mindestbestellmenge: 31
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BSC050NE2LSATMA1 BSC050NE2LS_Rev+2.1_.pdf?folderId=db3a304326dfb1300126fb3bec803f1a&fileId=db3a304326dfb1300126fb5ce0cb3f2d
BSC050NE2LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 39A/58A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 12 V
auf Bestellung 6523 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.57 EUR
18+0.98 EUR
100+0.64 EUR
500+0.49 EUR
1000+0.45 EUR
2000+0.41 EUR
Mindestbestellmenge: 12
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BSC052N03LSATMA1 BSC052N03LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cbc1084350363
BSC052N03LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 17A/57A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
auf Bestellung 24885 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.6 EUR
18+1 EUR
100+0.67 EUR
500+0.52 EUR
Mindestbestellmenge: 11
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BSC060P03NS3EGATMA1 BSC060P03NS3E+G_2.1.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304320896aa20120adcbe71367cb
BSC060P03NS3EGATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 17.7/100A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 150µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 15 V
auf Bestellung 6786 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.24 EUR
13+1.41 EUR
100+0.94 EUR
500+0.73 EUR
1000+0.67 EUR
2000+0.64 EUR
Mindestbestellmenge: 8
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BSC070N10NS3GATMA1 BSC070N10NS3+Rev2+1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304327b89750012824712c6c6f2f
BSC070N10NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 90A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 75µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V
auf Bestellung 19135 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.22 EUR
10+2.06 EUR
100+1.4 EUR
500+1.11 EUR
1000+1.06 EUR
Mindestbestellmenge: 6
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BSD235CH6327XTSA1 BSD235C_rev2.3.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433580b371013585a2d0d53326
BSD235CH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 20V 0.95A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 950mA, 530mA
Input Capacitance (Ciss) (Max) @ Vds: 47pF @ 10V
Rds On (Max) @ Id, Vgs: 350mOhm @ 950mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
auf Bestellung 26580 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
41+0.44 EUR
100+0.23 EUR
500+0.21 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
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BSD235NH6327XTSA1 BSD235N_Rev2.3.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011afc70075c04e0
BSD235NH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 0.95A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 950mA
Input Capacitance (Ciss) (Max) @ Vds: 63pF @ 10V
Rds On (Max) @ Id, Vgs: 350mOhm @ 950mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.32nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
Supplier Device Package: PG-SOT363-PO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 51172 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
43+0.42 EUR
100+0.19 EUR
500+0.18 EUR
1000+0.17 EUR
Mindestbestellmenge: 25
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BSD314SPEL6327HTSA1 BSD314SPE.pdf
BSD314SPEL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 1.5A SOT363
Produkt ist nicht verfügbar
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BSD840NH6327XTSA1 BSD840N_Rev2.3_.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431b0626df011b12b4486c7c02
BSD840NH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 0.88A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 880mA
Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 880mA, 2.5V
Gate Charge (Qg) (Max) @ Vgs: 0.26nC @ 2.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 750mV @ 1.6µA
Supplier Device Package: PG-SOT363-PO
Part Status: Active
auf Bestellung 2239 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
49+0.36 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 30
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BSL207NL6327HTSA1 BSL207N_Rev2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011aee15c15b0376
BSL207NL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 2.1A TSOP6-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-TSOP6-6
Produkt ist nicht verfügbar
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BSL308PEL6327HTSA1 BSL308PE_Rev2.02.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a30431d8a6b3c011d8ff3592c03d0
BSL308PEL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 11µA
Supplier Device Package: PG-TSOP6-6
Part Status: Obsolete
Produkt ist nicht verfügbar
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BSL806NL6327HTSA1 Infineon-BSL806N-DS-v02_03-en.pdf?fileId=db3a30431b0626df011b128dcbe37bb1
BSL806NL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 2.3A 6TSOP
Produkt ist nicht verfügbar
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BSP320SL6327HTSA1 BSP320S.pdf
BSP320SL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 2.9A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS126H6906XTSA1 BSS126_Rev2.0_.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f6860601310483af163eba
BSS126H6906XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 44082 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.57 EUR
19+0.98 EUR
100+0.64 EUR
500+0.49 EUR
1000+0.45 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
BSS131H6327XTSA1 BSS131_V2.5+G.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f68606013104bf65993eeb
BSS131H6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 240V 110MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 56µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 77 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 14749 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
52+0.34 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 32
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BSS139H6327XTSA1 INFNS19226-1.pdf?t.download=true&u=5oefqw
BSS139H6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 100MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 100µA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 56µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 59588 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
31+0.58 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 19
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BSS159NH6906XTSA1 Infineon-BSS159N-DS-v02_02-en.pdf?fileId=db3a304330f68606013108d8b2230036
BSS159NH6906XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 160mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 26µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 37124 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.58 EUR
18+0.99 EUR
100+0.65 EUR
500+0.5 EUR
1000+0.45 EUR
Mindestbestellmenge: 12
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BSS159NL6906HTSA1 BSS159N.pdf
BSS159NL6906HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 160mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 26µA
Supplier Device Package: PG-SOT23
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 25 V
Produkt ist nicht verfügbar
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BSS169L6906HTSA1 BSS169.pdf
BSS169L6906HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS205NH6327XTSA1 BSS205N_Rev2.4.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f686060131091244950062
BSS205NH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 2.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 419 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 24184 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
54+0.33 EUR
123+0.14 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
BSS214NH6327XTSA1 BSS214N_Rev2.3.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f6860601311828a70444e9
BSS214NH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 1.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 177143 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
71+0.25 EUR
103+0.17 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
BSS215PH6327XTSA1 BSS215P_Rev2.3.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304330f6860601311833f57144fb
BSS215PH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 1.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 126442 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
41+0.43 EUR
100+0.27 EUR
500+0.19 EUR
1000+0.16 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
BSS306NH6327XTSA1 BSS306N_Rev2.3.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f686060130ff4c1f867ef5
BSS306NH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 2.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 85503 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
61+0.29 EUR
100+0.2 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
BSS308PEH6327XTSA1 BSS308PE_Rev2.03.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304330f686060131099c80400073
BSS308PEH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 207979 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
47+0.38 EUR
100+0.24 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
BSS314PEH6327XTSA1 BSS314PE_rev2.2.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304330f68606013109b696aa0084
BSS314PEH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 1.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 6.3µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 55595 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
51+0.35 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
BSS315PH6327XTSA1 BSS315P_Rev2.3.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304330f686060130ff61f31b7f06
BSS315PH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 1.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 282 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 75509 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
45+0.39 EUR
100+0.25 EUR
500+0.18 EUR
1000+0.15 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
BSS316NH6327XTSA1 BSS316N_Rev2.3.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f686060130ff7ee4b07f16
BSS316NH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 1.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 94 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 431321 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
117+0.15 EUR
190+0.093 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
BSS670S2LH6327XTSA1 BSS670S2L_Rev2.5.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f68606013109e4a7fb0094
BSS670S2LH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 540MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 270mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 2.7µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 2.26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 70837 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
67+0.27 EUR
120+0.15 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
BSS806NH6327XTSA1 BSS806N_Rev2.3_.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f686060131185f0553451c
BSS806NH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 2.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 750mV @ 11µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 479736 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
51+0.35 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
BSS83PH6327XTSA1 BSS83P%20H6327.pdf
BSS83PH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 330MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 330mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 107561 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
47+0.38 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
BSV236SPH6327XTSA1 dgdl?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a30433580b37101358600cb67339f
BSV236SPH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 1.5A SOT363-6
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 560mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 8µA
Supplier Device Package: PG-SOT363-PO
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 8386 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
43+0.42 EUR
100+0.26 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 26
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IPL60R299CPAUMA1 IPL60R299CP_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043284aacd801285d1c1c8e27f4
IPL60R299CPAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 11.1A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SN7002N H6327 SN7002N_Rev2.6_.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f6860601311934e76045d5
SN7002N H6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 200MA SOT23
auf Bestellung 5339 Stücke:
Lieferzeit 10-14 Tag (e)
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BSC0901NSI BSC0901NSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f2aa7bdc30067
BSC0901NSI
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 28A 8TDSON
auf Bestellung 7499 Stücke:
Lieferzeit 10-14 Tag (e)
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BSC0904NSI BSC0904NSI_Rev+2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f3073397339ef
BSC0904NSI
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 20A 8TDSON
auf Bestellung 324 Stücke:
Lieferzeit 10-14 Tag (e)
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BSC22DN20NS3 G BSC22DN20NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b1582d2df1a48
BSC22DN20NS3 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 7A 8TDSON
auf Bestellung 11863 Stücke:
Lieferzeit 10-14 Tag (e)
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BSC883N03MSGATMA1 BSC883N03MS_G.pdf
BSC883N03MSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 34V 19A TDSON-8
Produkt ist nicht verfügbar
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BSF030NE2LQ BSF030NE2LQ_Rev+2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e398416012e47a8f0792588
BSF030NE2LQ
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 24A WDSON-2
auf Bestellung 18003 Stücke:
Lieferzeit 10-14 Tag (e)
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BSF077N06NT3GXUMA1 BSF077N06NT3_G.pdf
BSF077N06NT3GXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 13A WDSON-2
Produkt ist nicht verfügbar
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BSO301SP H BSO301SP_Rev1+32.pdf?folderId=db3a304314dca38901154a7313d21a66&fileId=db3a304326c2768b0126d226cd5d68ac
BSO301SP H
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 12.6A 8DSO
auf Bestellung 5810 Stücke:
Lieferzeit 10-14 Tag (e)
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BSZ018NE2LS BSZ018NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ee77f32012f072b132a57fc
BSZ018NE2LS
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 23A TSDSON-8
auf Bestellung 22633 Stücke:
Lieferzeit 10-14 Tag (e)
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IPB037N06N3 G IPB037N06N3+G+_Rev1.01.pdf?folderId=db3a3043163797a6011637c252b10018&fileId=db3a304317a7483601182c2d4f447647
IPB037N06N3 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO263-3
auf Bestellung 2504 Stücke:
Lieferzeit 10-14 Tag (e)
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IPB049N06L3GATMA1 IPx049,52N06L3_G.pdf
IPB049N06L3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO263-3
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IPB097N08N3 G IPP_I_B100N08N3_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ddc9372011e071f53b82619
IPB097N08N3 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 70A TO263-3
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IPB60R385CP IPB60R385CP_rev2.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e836749df
IPB60R385CP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO-263
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IPB60R950C6 IPB60R950C6_2_1.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a30432239cccd0122a8282c217d66
IPB60R950C6
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 4.4A TO263
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IPB65R660CFD IPA65R660CFD2.41.pdf?folderId=db3a3043163797a6011637d4e912003c&fileId=db3a30432e0bea21012e14dccc656df9
IPB65R660CFD
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 6A TO263
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IPD068P03L3 G Infineon-IPD068P03L3_G-DS-v02_01-en.pdf?fileId=db3a30432313ff5e01232cc234f07d94
IPD068P03L3 G
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 70A TO252-3
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IPD60R520C6 Infineon-IPD60R520C6-DS-v02_02-EN.pdf?fileId=db3a30433ee50ba8013eeb469c71164a
IPD60R520C6
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 8.1A TO252
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IPD65R600C6 Infineon-IPD65R600C6-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433f1b26e8013f2ceafdee37c4
IPD65R600C6
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO252
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BSB165N15NZ3 G BSB165N15NZ3+G+Rev+2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432e779412012e7b04a1353843
BSB165N15NZ3 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 9A WDSON-2
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