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IPD042P03L3GBTMA1 IPD042P03L3GBTMA1 Infineon Technologies Infineon-IPD042P03L3_G-DS-v02_02-en.pdf?fileId=db3a30431d8a6b3c011d90c8c6e60425 Description: MOSFET P-CH 30V 70A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 12400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 2V @ 270µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPD053N06N3GBTMA1 IPD053N06N3GBTMA1 Infineon Technologies IPD053N06N3_G.pdf Description: MOSFET N-CH 60V 90A TO252-3
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 58µA
Power Dissipation (Max): 115W (Tc)
Produkt ist nicht verfügbar
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IPD068P03L3 G IPD068P03L3 G Infineon Technologies Infineon-IPD068P03L3_G-DS-v02_01-en.pdf?fileId=db3a30432313ff5e01232cc234f07d94 Description: MOSFET P-CH 30V 70A TO252-3
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IPD088N06N3GBTMA1 IPD088N06N3GBTMA1 Infineon Technologies IPD088N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2b2351db4d5c Description: MOSFET N-CH 60V 50A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 34µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPD180N10N3GBTMA1 IPD180N10N3GBTMA1 Infineon Technologies IPD180N10N3_G.pdf Description: MOSFET N-CH 100V 43A TO252-3
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
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IPD530N15N3GBTMA1 IPD530N15N3GBTMA1 Infineon Technologies Infineon-IPD530N15N3-DS-v02_06-en.pdf?fileId=db3a30432662379201266a1f6dd2227c Description: MOSFET N-CH 150V 21A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 18A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 75 V
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IPD60R520C6 IPD60R520C6 Infineon Technologies Infineon-IPD60R520C6-DS-v02_02-EN.pdf?fileId=db3a30433ee50ba8013eeb469c71164a Description: MOSFET N-CH 600V 8.1A TO252
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IPD60R520CPBTMA1 IPD60R520CPBTMA1 Infineon Technologies IPD60R520CP.pdf Description: MOSFET N-CH 600V 6.8A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 66W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPD60R600CPBTMA1 IPD60R600CPBTMA1 Infineon Technologies Infineon-IPD60R600CP-DS-v02_01-en.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e012385657d1567e3 Description: MOSFET N-CH 600V 6.1A TO252-3
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Power Dissipation (Max): 60W (Tc)
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IPD90R1K2C3BTMA1 IPD90R1K2C3BTMA1 Infineon Technologies IPD90R1K2C3.pdf Description: MOSFET N-CH 900V 5.1A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SPD50N03S2L06GBTMA1 SPD50N03S2L06GBTMA1 Infineon Technologies SPD50N03S2L-06G.pdf Description: MOSFET N-CH 30V 50A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 2V @ 85µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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2N7002DWH6327XTSA1 2N7002DWH6327XTSA1 Infineon Technologies 2N7002DW_Rev2.2_.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431a5c32f2011ad94ed41363f2 Description: MOSFET 2N-CH 60V 0.3A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PG-SOT363-PO
Part Status: Active
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BSB012NE2LX BSB012NE2LX Infineon Technologies BSB012NE2LX.pdf Description: MOSFET N-CH 25V 37A/170A 2WDSON
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BSB013NE2LXIXUMA1 BSB013NE2LXIXUMA1 Infineon Technologies BSB013NE2LXI_Rev+2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e398416012e47a158802577 Description: MOSFET N-CH 25V 36A/163A 2WDSON
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 163A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-WDSON
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BSB028N06NN3GXUMA1 BSB028N06NN3GXUMA1 Infineon Technologies BSB028N06NN3_Rev+1.4.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30432e25b009012e29fda4e23838 Description: MOSFET N-CH 60V 22A/90A 2WDSON
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id: 4V @ 102µA
Power Dissipation (Max): 2.2W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-WDSON
Packaging: Cut Tape (CT)
auf Bestellung 6668 Stücke:
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3+7.06 EUR
10+4.62 EUR
100+3.22 EUR
500+2.63 EUR
1000+2.44 EUR
2000+2.31 EUR
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BSB044N08NN3GXUMA1 BSB044N08NN3GXUMA1 Infineon Technologies BSB044N08NN3+G_Rev+1.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30435819ae2e012e385cde7b70d4 Description: MOSFET N-CH 80V 18A/90A 2WDSON
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id: 3.5V @ 97µA
Power Dissipation (Max): 2.2W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-WDSON
Packaging: Cut Tape (CT)
auf Bestellung 2000 Stücke:
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3+8.1 EUR
10+5.36 EUR
100+3.8 EUR
500+3.13 EUR
1000+2.98 EUR
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BSB056N10NN3GXUMA1 BSB056N10NN3GXUMA1 Infineon Technologies BSB056N10NN3+G_Rev+2.4_.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30442e152e91012e390b9a631459 Description: MOSFET N-CH 100V 9A/83A 2WDSON
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 83A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-WDSON
Packaging: Cut Tape (CT)
auf Bestellung 1429 Stücke:
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3+7.58 EUR
10+4.96 EUR
100+3.47 EUR
500+2.84 EUR
1000+2.64 EUR
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BSB165N15NZ3 G BSB165N15NZ3 G Infineon Technologies BSB165N15NZ3+G+Rev+2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432e779412012e7b04a1353843 Description: MOSFET N-CH 150V 9A WDSON-2
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BSB280N15NZ3GXUMA1 BSB280N15NZ3GXUMA1 Infineon Technologies BSB280N15NZ3+G+Rev+2.4_.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432e779412012e7b0b544c3852 Description: MOSFET N-CH 150V 9A/30A 2WDSON
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id: 4V @ 60µA
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-WDSON
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BSC009NE2LSATMA1 BSC009NE2LSATMA1 Infineon Technologies infineon-bsc009ne2ls-datasheet-en.pdf?fileId=db3a304332d040720132dd4232240e1d Description: MOSFET N-CH 25V 41A/255A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 255A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 12 V
auf Bestellung 5253 Stücke:
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6+3.64 EUR
10+2.33 EUR
100+1.57 EUR
500+1.25 EUR
1000+1.18 EUR
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BSC010NE2LSIATMA1 BSC010NE2LSIATMA1 Infineon Technologies BSC010NE2LSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f01308d8d1cdf33de Description: MOSFET N-CH 25V 38A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 12 V
auf Bestellung 8543 Stücke:
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5+4.58 EUR
10+2.94 EUR
100+1.99 EUR
500+1.59 EUR
1000+1.46 EUR
2000+1.43 EUR
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BSC011N03LSIATMA1 BSC011N03LSIATMA1 Infineon Technologies BSC011N03LSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f013097dfdcc22f66 Description: MOSFET N-CH 30V 37A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
auf Bestellung 71848 Stücke:
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6+4 EUR
10+2.55 EUR
100+1.73 EUR
500+1.37 EUR
1000+1.26 EUR
2000+1.2 EUR
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BSC014NE2LSIATMA1 BSC014NE2LSIATMA1 Infineon Technologies BSC014NE2LSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f013093b0024571b1 Description: MOSFET N-CH 25V 33A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 12 V
auf Bestellung 6151 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.49 EUR
10+2.86 EUR
100+1.93 EUR
500+1.54 EUR
1000+1.4 EUR
2000+1.3 EUR
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BSC018NE2LSIATMA1 BSC018NE2LSIATMA1 Infineon Technologies BSC018NE2LSI_Rev+2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f013093b8abf971c2 Description: MOSFET N-CH 25V 29A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 9250 Stücke:
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8+2.83 EUR
10+2.31 EUR
100+1.8 EUR
500+1.52 EUR
1000+1.24 EUR
2000+1.17 EUR
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BSC024NE2LSATMA1 BSC024NE2LSATMA1 Infineon Technologies BSC024NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012ca76f4fe52f6b Description: MOSFET N-CH 25V 25A/110A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 12371 Stücke:
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9+2.4 EUR
14+1.59 EUR
100+1.14 EUR
500+0.96 EUR
1000+0.82 EUR
2000+0.81 EUR
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BSC032NE2LSATMA1 BSC032NE2LSATMA1 Infineon Technologies BSC032NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ed8c328633851 Description: MOSFET N-CH 25V 22A/84A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 84A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 1558 Stücke:
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31+0.68 EUR
100+0.62 EUR
500+0.6 EUR
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BSC050NE2LSATMA1 BSC050NE2LSATMA1 Infineon Technologies BSC050NE2LS_Rev+2.1_.pdf?folderId=db3a304326dfb1300126fb3bec803f1a&fileId=db3a304326dfb1300126fb5ce0cb3f2d Description: MOSFET N-CH 25V 39A/58A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 12 V
auf Bestellung 12242 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.9 EUR
18+1.19 EUR
100+0.77 EUR
500+0.6 EUR
1000+0.54 EUR
2000+0.49 EUR
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BSC052N03LSATMA1 BSC052N03LSATMA1 Infineon Technologies BSC052N03LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cbc1084350363 Description: MOSFET N-CH 30V 17A/57A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
auf Bestellung 662 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.93 EUR
18+1.19 EUR
100+0.79 EUR
500+0.6 EUR
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BSC060P03NS3EGATMA1 BSC060P03NS3EGATMA1 Infineon Technologies BSC060P03NS3E+G_2.1.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304320896aa20120adcbe71367cb Description: MOSFET P-CH 30V 17.7/100A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 150µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 15 V
auf Bestellung 4505 Stücke:
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8+2.62 EUR
13+1.65 EUR
100+1.09 EUR
500+0.86 EUR
1000+0.79 EUR
2000+0.75 EUR
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BSC070N10NS3GATMA1 BSC070N10NS3GATMA1 Infineon Technologies BSC070N10NS3+Rev2+1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304327b89750012824712c6c6f2f Description: MOSFET N-CH 100V 90A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 75µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V
auf Bestellung 6570 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.81 EUR
10+2.45 EUR
100+1.65 EUR
500+1.32 EUR
1000+1.26 EUR
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BSD235CH6327XTSA1 BSD235CH6327XTSA1 Infineon Technologies BSD235C_rev2.3.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433580b371013585a2d0d53326 Description: MOSFET N/P-CH 20V 0.95A SOT363
Part Status: Active
Supplier Device Package: PG-SOT363-6-1
Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
Rds On (Max) @ Id, Vgs: 350mOhm @ 950mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 47pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 950mA, 530mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 43199 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.94 EUR
37+0.57 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
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BSD235NH6327XTSA1 BSD235NH6327XTSA1 Infineon Technologies BSD235N_Rev2.3.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011afc70075c04e0 Description: MOSFET 2N-CH 20V 0.95A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 950mA
Input Capacitance (Ciss) (Max) @ Vds: 63pF @ 10V
Rds On (Max) @ Id, Vgs: 350mOhm @ 950mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.32nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
Supplier Device Package: PG-SOT363-PO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8088 Stücke:
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25+0.86 EUR
40+0.52 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.23 EUR
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BSD314SPEL6327HTSA1 BSD314SPEL6327HTSA1 Infineon Technologies BSD314SPE.pdf Description: MOSFET P-CH 30V 1.5A SOT363
Produkt ist nicht verfügbar
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BSD840NH6327XTSA1 BSD840NH6327XTSA1 Infineon Technologies BSD840N_Rev2.3_.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431b0626df011b12b4486c7c02 Description: MOSFET 2N-CH 20V 0.88A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 880mA
Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 880mA, 2.5V
Gate Charge (Qg) (Max) @ Vgs: 0.26nC @ 2.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 750mV @ 1.6µA
Supplier Device Package: PG-SOT363-PO
Part Status: Active
auf Bestellung 192093 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.83 EUR
41+0.52 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.21 EUR
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BSL207NL6327HTSA1 BSL207NL6327HTSA1 Infineon Technologies BSL207N_Rev2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011aee15c15b0376 Description: MOSFET 2N-CH 20V 2.1A TSOP6-6
Vgs(th) (Max) @ Id: 1.2V @ 11µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Supplier Device Package: PG-TSOP6-6
Produkt ist nicht verfügbar
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BSL308PEL6327HTSA1 BSL308PEL6327HTSA1 Infineon Technologies BSL308PE_Rev2.02.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a30431d8a6b3c011d8ff3592c03d0 Description: MOSFET 2P-CH 30V 2A 6TSOP
Part Status: Obsolete
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 1V @ 11µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BSL806NL6327HTSA1 BSL806NL6327HTSA1 Infineon Technologies Infineon-BSL806N-DS-v02_03-en.pdf?fileId=db3a30431b0626df011b128dcbe37bb1 Description: MOSFET 2N-CH 20V 2.3A 6TSOP
Produkt ist nicht verfügbar
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BSP320SL6327HTSA1 BSP320SL6327HTSA1 Infineon Technologies BSP320S.pdf Description: MOSFET N-CH 60V 2.9A SOT223-4
Qualification: AEC-Q101
Grade: Automotive
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-SOT223-4-21
Vgs(th) (Max) @ Id: 4V @ 20µA
Produkt ist nicht verfügbar
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BSS126H6906XTSA1 BSS126H6906XTSA1 Infineon Technologies BSS126_Rev2.0_.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f6860601310483af163eba Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 38245 Stücke:
Lieferzeit 10-14 Tag (e)
11+2.07 EUR
17+1.3 EUR
100+0.84 EUR
500+0.65 EUR
1000+0.6 EUR
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BSS131H6327XTSA1 BSS131H6327XTSA1 Infineon Technologies BSS131_V2.5+G.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f68606013104bf65993eeb Description: MOSFET N-CH 240V 110MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 56µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 77 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS139H6327XTSA1 BSS139H6327XTSA1 Infineon Technologies INFNS19226-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 250V 100MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 100µA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 56µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS159NH6906XTSA1 BSS159NH6906XTSA1 Infineon Technologies Infineon-BSS159N-DS-v02_02-en.pdf?fileId=db3a304330f68606013108d8b2230036 Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 160mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 26µA
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 27267 Stücke:
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14+1.51 EUR
100+0.99 EUR
500+0.76 EUR
1000+0.69 EUR
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BSS159NL6906HTSA1 BSS159NL6906HTSA1 Infineon Technologies BSS159N.pdf Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 160mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 26µA
Supplier Device Package: PG-SOT23
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 25 V
Produkt ist nicht verfügbar
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BSS169L6906HTSA1 BSS169L6906HTSA1 Infineon Technologies BSS169.pdf Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 25 V
Produkt ist nicht verfügbar
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BSS205NH6327XTSA1 BSS205NH6327XTSA1 Infineon Technologies BSS205N_Rev2.4.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f686060131091244950062 Description: MOSFET N-CH 20V 2.5A SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 419 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 24184 Stücke:
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BSS214NH6327XTSA1 BSS214NH6327XTSA1 Infineon Technologies BSS214N_Rev2.3.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f6860601311828a70444e9 Description: MOSFET N-CH 20V 1.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 67001 Stücke:
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50+0.43 EUR
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500+0.2 EUR
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BSS215PH6327XTSA1 BSS215PH6327XTSA1 Infineon Technologies BSS215P_Rev2.3.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304330f6860601311833f57144fb Description: MOSFET P-CH 20V 1.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 43419 Stücke:
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38+0.55 EUR
100+0.35 EUR
500+0.26 EUR
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BSS306NH6327XTSA1 BSS306NH6327XTSA1 Infineon Technologies BSS306N_Rev2.3.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f686060130ff4c1f867ef5 Description: MOSFET N-CH 30V 2.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 15 V
Qualification: AEC-Q101
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39+0.55 EUR
100+0.35 EUR
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BSS308PEH6327XTSA1 BSS308PEH6327XTSA1 Infineon Technologies BSS308PE_Rev2.03.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304330f686060131099c80400073 Description: MOSFET P-CH 30V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 8903 Stücke:
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40+0.54 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.23 EUR
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BSS314PEH6327XTSA1 BSS314PEH6327XTSA1 Infineon Technologies BSS314PE_rev2.2.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304330f68606013109b696aa0084 Description: MOSFET P-CH 30V 1.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 6.3µA
Supplier Device Package: PG-SOT23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 97549 Stücke:
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26+0.82 EUR
43+0.5 EUR
100+0.31 EUR
500+0.24 EUR
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BSS315PH6327XTSA1 BSS315PH6327XTSA1 Infineon Technologies BSS315P_Rev2.3.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304330f686060130ff61f31b7f06 Description: MOSFET P-CH 30V 1.5A SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 282 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 2V @ 11µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 75509 Stücke:
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28+0.75 EUR
45+0.46 EUR
100+0.3 EUR
500+0.21 EUR
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BSS316NH6327XTSA1 BSS316NH6327XTSA1 Infineon Technologies BSS316N_Rev2.3.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f686060130ff7ee4b07f16 Description: MOSFET N-CH 30V 1.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 94 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 246234 Stücke:
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54+0.39 EUR
100+0.25 EUR
500+0.18 EUR
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BSS670S2LH6327XTSA1 BSS670S2LH6327XTSA1 Infineon Technologies BSS670S2L_Rev2.5.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f68606013109e4a7fb0094 Description: MOSFET N-CH 55V 540MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 270mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 2.7µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 2.26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 38866 Stücke:
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39+0.55 EUR
63+0.33 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.13 EUR
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BSS806NH6327XTSA1 BSS806NH6327XTSA1 Infineon Technologies BSS806N_Rev2.3_.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f686060131185f0553451c Description: MOSFET N-CH 20V 2.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 750mV @ 11µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 347100 Stücke:
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26+0.82 EUR
42+0.5 EUR
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500+0.24 EUR
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BSS83PH6327XTSA1 BSS83PH6327XTSA1 Infineon Technologies BSS83P%20H6327.pdf Description: MOSFET P-CH 60V 330MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 330mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 164133 Stücke:
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44+0.48 EUR
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BSV236SPH6327XTSA1 BSV236SPH6327XTSA1 Infineon Technologies dgdl?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a30433580b37101358600cb67339f Description: MOSFET P-CH 20V 1.5A SOT363-6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PG-SOT363-PO
Vgs(th) (Max) @ Id: 1.2V @ 8µA
Power Dissipation (Max): 560mW (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 8386 Stücke:
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SN7002N H6327 SN7002N H6327 Infineon Technologies SN7002N_Rev2.6_.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f6860601311934e76045d5 Description: MOSFET N-CH 60V 200MA SOT23
auf Bestellung 5339 Stücke:
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BSC0901NSI BSC0901NSI Infineon Technologies BSC0901NSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f2aa7bdc30067 Description: MOSFET N-CH 30V 28A 8TDSON
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BSC0904NSI BSC0904NSI Infineon Technologies BSC0904NSI_Rev+2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f3073397339ef Description: MOSFET N-CH 30V 20A 8TDSON
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BSC22DN20NS3 G BSC22DN20NS3 G Infineon Technologies BSC22DN20NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b1582d2df1a48 Description: MOSFET N-CH 200V 7A 8TDSON
auf Bestellung 11863 Stücke:
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IPD042P03L3GBTMA1 Infineon-IPD042P03L3_G-DS-v02_02-en.pdf?fileId=db3a30431d8a6b3c011d90c8c6e60425
IPD042P03L3GBTMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 70A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 12400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 2V @ 270µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPD053N06N3GBTMA1 IPD053N06N3_G.pdf
IPD053N06N3GBTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-3
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 58µA
Power Dissipation (Max): 115W (Tc)
Produkt ist nicht verfügbar
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IPD068P03L3 G Infineon-IPD068P03L3_G-DS-v02_01-en.pdf?fileId=db3a30432313ff5e01232cc234f07d94
IPD068P03L3 G
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 70A TO252-3
auf Bestellung 6607 Stücke:
Lieferzeit 10-14 Tag (e)
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IPD088N06N3GBTMA1 IPD088N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2b2351db4d5c
IPD088N06N3GBTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 34µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPD180N10N3GBTMA1 IPD180N10N3_G.pdf
IPD180N10N3GBTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 43A TO252-3
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Produkt ist nicht verfügbar
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IPD530N15N3GBTMA1 Infineon-IPD530N15N3-DS-v02_06-en.pdf?fileId=db3a30432662379201266a1f6dd2227c
IPD530N15N3GBTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 21A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 18A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 75 V
Produkt ist nicht verfügbar
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IPD60R520C6 Infineon-IPD60R520C6-DS-v02_02-EN.pdf?fileId=db3a30433ee50ba8013eeb469c71164a
IPD60R520C6
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 8.1A TO252
auf Bestellung 51 Stücke:
Lieferzeit 10-14 Tag (e)
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IPD60R520CPBTMA1 IPD60R520CP.pdf
IPD60R520CPBTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 6.8A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 66W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPD60R600CPBTMA1 Infineon-IPD60R600CP-DS-v02_01-en.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e012385657d1567e3
IPD60R600CPBTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 6.1A TO252-3
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Power Dissipation (Max): 60W (Tc)
Produkt ist nicht verfügbar
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IPD90R1K2C3BTMA1 IPD90R1K2C3.pdf
IPD90R1K2C3BTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 5.1A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SPD50N03S2L06GBTMA1 SPD50N03S2L-06G.pdf
SPD50N03S2L06GBTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 2V @ 85µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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2N7002DWH6327XTSA1 2N7002DW_Rev2.2_.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431a5c32f2011ad94ed41363f2
2N7002DWH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 60V 0.3A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PG-SOT363-PO
Part Status: Active
Produkt ist nicht verfügbar
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BSB012NE2LX BSB012NE2LX.pdf
BSB012NE2LX
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 37A/170A 2WDSON
Produkt ist nicht verfügbar
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BSB013NE2LXIXUMA1 BSB013NE2LXI_Rev+2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e398416012e47a158802577
BSB013NE2LXIXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 36A/163A 2WDSON
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 163A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-WDSON
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BSB028N06NN3GXUMA1 BSB028N06NN3_Rev+1.4.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30432e25b009012e29fda4e23838
BSB028N06NN3GXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 22A/90A 2WDSON
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id: 4V @ 102µA
Power Dissipation (Max): 2.2W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-WDSON
Packaging: Cut Tape (CT)
auf Bestellung 6668 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.06 EUR
10+4.62 EUR
100+3.22 EUR
500+2.63 EUR
1000+2.44 EUR
2000+2.31 EUR
Mindestbestellmenge: 3 Stücke
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BSB044N08NN3GXUMA1 BSB044N08NN3+G_Rev+1.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30435819ae2e012e385cde7b70d4
BSB044N08NN3GXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 18A/90A 2WDSON
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id: 3.5V @ 97µA
Power Dissipation (Max): 2.2W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-WDSON
Packaging: Cut Tape (CT)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.1 EUR
10+5.36 EUR
100+3.8 EUR
500+3.13 EUR
1000+2.98 EUR
Mindestbestellmenge: 3 Stücke
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BSB056N10NN3GXUMA1 BSB056N10NN3+G_Rev+2.4_.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30442e152e91012e390b9a631459
BSB056N10NN3GXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 9A/83A 2WDSON
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 83A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-WDSON
Packaging: Cut Tape (CT)
auf Bestellung 1429 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.58 EUR
10+4.96 EUR
100+3.47 EUR
500+2.84 EUR
1000+2.64 EUR
Mindestbestellmenge: 3 Stücke
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BSB165N15NZ3 G BSB165N15NZ3+G+Rev+2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432e779412012e7b04a1353843
BSB165N15NZ3 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 9A WDSON-2
auf Bestellung 9105 Stücke:
Lieferzeit 10-14 Tag (e)
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BSB280N15NZ3GXUMA1 BSB280N15NZ3+G+Rev+2.4_.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432e779412012e7b0b544c3852
BSB280N15NZ3GXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 9A/30A 2WDSON
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id: 4V @ 60µA
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-WDSON
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BSC009NE2LSATMA1 infineon-bsc009ne2ls-datasheet-en.pdf?fileId=db3a304332d040720132dd4232240e1d
BSC009NE2LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 41A/255A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 255A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 12 V
auf Bestellung 5253 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.64 EUR
10+2.33 EUR
100+1.57 EUR
500+1.25 EUR
1000+1.18 EUR
Mindestbestellmenge: 6 Stücke
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BSC010NE2LSIATMA1 BSC010NE2LSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f01308d8d1cdf33de
BSC010NE2LSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 38A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 12 V
auf Bestellung 8543 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.58 EUR
10+2.94 EUR
100+1.99 EUR
500+1.59 EUR
1000+1.46 EUR
2000+1.43 EUR
Mindestbestellmenge: 5 Stücke
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BSC011N03LSIATMA1 BSC011N03LSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f013097dfdcc22f66
BSC011N03LSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 37A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
auf Bestellung 71848 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4 EUR
10+2.55 EUR
100+1.73 EUR
500+1.37 EUR
1000+1.26 EUR
2000+1.2 EUR
Mindestbestellmenge: 6 Stücke
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BSC014NE2LSIATMA1 BSC014NE2LSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f013093b0024571b1
BSC014NE2LSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 33A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 12 V
auf Bestellung 6151 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.49 EUR
10+2.86 EUR
100+1.93 EUR
500+1.54 EUR
1000+1.4 EUR
2000+1.3 EUR
Mindestbestellmenge: 5 Stücke
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BSC018NE2LSIATMA1 BSC018NE2LSI_Rev+2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f013093b8abf971c2
BSC018NE2LSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 29A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 9250 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.83 EUR
10+2.31 EUR
100+1.8 EUR
500+1.52 EUR
1000+1.24 EUR
2000+1.17 EUR
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BSC024NE2LSATMA1 BSC024NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012ca76f4fe52f6b
BSC024NE2LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 25A/110A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 12371 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.4 EUR
14+1.59 EUR
100+1.14 EUR
500+0.96 EUR
1000+0.82 EUR
2000+0.81 EUR
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BSC032NE2LSATMA1 BSC032NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ed8c328633851
BSC032NE2LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 22A/84A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 84A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 1558 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
31+0.68 EUR
100+0.62 EUR
500+0.6 EUR
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BSC050NE2LSATMA1 BSC050NE2LS_Rev+2.1_.pdf?folderId=db3a304326dfb1300126fb3bec803f1a&fileId=db3a304326dfb1300126fb5ce0cb3f2d
BSC050NE2LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 39A/58A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 12 V
auf Bestellung 12242 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.9 EUR
18+1.19 EUR
100+0.77 EUR
500+0.6 EUR
1000+0.54 EUR
2000+0.49 EUR
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BSC052N03LSATMA1 BSC052N03LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cbc1084350363
BSC052N03LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 17A/57A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
auf Bestellung 662 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.93 EUR
18+1.19 EUR
100+0.79 EUR
500+0.6 EUR
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BSC060P03NS3EGATMA1 BSC060P03NS3E+G_2.1.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304320896aa20120adcbe71367cb
BSC060P03NS3EGATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 17.7/100A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 150µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 15 V
auf Bestellung 4505 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.62 EUR
13+1.65 EUR
100+1.09 EUR
500+0.86 EUR
1000+0.79 EUR
2000+0.75 EUR
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BSC070N10NS3GATMA1 BSC070N10NS3+Rev2+1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304327b89750012824712c6c6f2f
BSC070N10NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 90A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 75µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V
auf Bestellung 6570 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.81 EUR
10+2.45 EUR
100+1.65 EUR
500+1.32 EUR
1000+1.26 EUR
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BSD235CH6327XTSA1 BSD235C_rev2.3.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433580b371013585a2d0d53326
BSD235CH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 20V 0.95A SOT363
Part Status: Active
Supplier Device Package: PG-SOT363-6-1
Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
Rds On (Max) @ Id, Vgs: 350mOhm @ 950mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 47pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 950mA, 530mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 43199 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.94 EUR
37+0.57 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
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BSD235NH6327XTSA1 BSD235N_Rev2.3.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011afc70075c04e0
BSD235NH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 0.95A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 950mA
Input Capacitance (Ciss) (Max) @ Vds: 63pF @ 10V
Rds On (Max) @ Id, Vgs: 350mOhm @ 950mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.32nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
Supplier Device Package: PG-SOT363-PO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8088 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.86 EUR
40+0.52 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.23 EUR
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BSD314SPEL6327HTSA1 BSD314SPE.pdf
BSD314SPEL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 1.5A SOT363
Produkt ist nicht verfügbar
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BSD840NH6327XTSA1 BSD840N_Rev2.3_.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431b0626df011b12b4486c7c02
BSD840NH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 0.88A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 880mA
Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 880mA, 2.5V
Gate Charge (Qg) (Max) @ Vgs: 0.26nC @ 2.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 750mV @ 1.6µA
Supplier Device Package: PG-SOT363-PO
Part Status: Active
auf Bestellung 192093 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
41+0.52 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.21 EUR
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BSL207NL6327HTSA1 BSL207N_Rev2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011aee15c15b0376
BSL207NL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 2.1A TSOP6-6
Vgs(th) (Max) @ Id: 1.2V @ 11µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Supplier Device Package: PG-TSOP6-6
Produkt ist nicht verfügbar
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BSL308PEL6327HTSA1 BSL308PE_Rev2.02.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a30431d8a6b3c011d8ff3592c03d0
BSL308PEL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 2A 6TSOP
Part Status: Obsolete
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 1V @ 11µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BSL806NL6327HTSA1 Infineon-BSL806N-DS-v02_03-en.pdf?fileId=db3a30431b0626df011b128dcbe37bb1
BSL806NL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 2.3A 6TSOP
Produkt ist nicht verfügbar
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BSP320SL6327HTSA1 BSP320S.pdf
BSP320SL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 2.9A SOT223-4
Qualification: AEC-Q101
Grade: Automotive
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-SOT223-4-21
Vgs(th) (Max) @ Id: 4V @ 20µA
Produkt ist nicht verfügbar
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BSS126H6906XTSA1 BSS126_Rev2.0_.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f6860601310483af163eba
BSS126H6906XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 38245 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.07 EUR
17+1.3 EUR
100+0.84 EUR
500+0.65 EUR
1000+0.6 EUR
Mindestbestellmenge: 11 Stücke
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BSS131H6327XTSA1 BSS131_V2.5+G.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f68606013104bf65993eeb
BSS131H6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 240V 110MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 56µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 77 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS139H6327XTSA1 INFNS19226-1.pdf?t.download=true&u=5oefqw
BSS139H6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 100MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 100µA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 56µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS159NH6906XTSA1 Infineon-BSS159N-DS-v02_02-en.pdf?fileId=db3a304330f68606013108d8b2230036
BSS159NH6906XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 160mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 26µA
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 27267 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.4 EUR
14+1.51 EUR
100+0.99 EUR
500+0.76 EUR
1000+0.69 EUR
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BSS159NL6906HTSA1 BSS159N.pdf
BSS159NL6906HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 160mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 26µA
Supplier Device Package: PG-SOT23
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 25 V
Produkt ist nicht verfügbar
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BSS169L6906HTSA1 BSS169.pdf
BSS169L6906HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 25 V
Produkt ist nicht verfügbar
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BSS205NH6327XTSA1 BSS205N_Rev2.4.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f686060131091244950062
BSS205NH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 2.5A SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 419 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 24184 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
32+0.67 EUR
54+0.39 EUR
123+0.17 EUR
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BSS214NH6327XTSA1 BSS214N_Rev2.3.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f6860601311828a70444e9
BSS214NH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 1.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 67001 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
31+0.69 EUR
50+0.43 EUR
100+0.26 EUR
500+0.2 EUR
1000+0.18 EUR
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BSS215PH6327XTSA1 BSS215P_Rev2.3.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304330f6860601311833f57144fb
BSS215PH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 1.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 43419 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
24+0.9 EUR
38+0.55 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.24 EUR
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BSS306NH6327XTSA1 BSS306N_Rev2.3.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f686060130ff4c1f867ef5
BSS306NH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 2.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 131616 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
24+0.88 EUR
39+0.55 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.23 EUR
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BSS308PEH6327XTSA1 BSS308PE_Rev2.03.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304330f686060131099c80400073
BSS308PEH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 8903 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.86 EUR
40+0.54 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.23 EUR
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BSS314PEH6327XTSA1 BSS314PE_rev2.2.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304330f68606013109b696aa0084
BSS314PEH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 1.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 6.3µA
Supplier Device Package: PG-SOT23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 97549 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
26+0.82 EUR
43+0.5 EUR
100+0.31 EUR
500+0.24 EUR
1000+0.21 EUR
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BSS315PH6327XTSA1 BSS315P_Rev2.3.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304330f686060130ff61f31b7f06
BSS315PH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 1.5A SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 282 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 2V @ 11µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 75509 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.75 EUR
45+0.46 EUR
100+0.3 EUR
500+0.21 EUR
1000+0.18 EUR
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BSS316NH6327XTSA1 BSS316N_Rev2.3.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f686060130ff7ee4b07f16
BSS316NH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 1.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 94 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 246234 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
33+0.65 EUR
54+0.39 EUR
100+0.25 EUR
500+0.18 EUR
1000+0.15 EUR
Mindestbestellmenge: 33 Stücke
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BSS670S2LH6327XTSA1 BSS670S2L_Rev2.5.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f68606013109e4a7fb0094
BSS670S2LH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 540MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 270mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 2.7µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 2.26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 38866 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
39+0.55 EUR
63+0.33 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 39 Stücke
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BSS806NH6327XTSA1 BSS806N_Rev2.3_.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f686060131185f0553451c
BSS806NH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 2.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 750mV @ 11µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 347100 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
26+0.82 EUR
42+0.5 EUR
100+0.32 EUR
500+0.24 EUR
1000+0.21 EUR
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BSS83PH6327XTSA1 BSS83P%20H6327.pdf
BSS83PH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 330MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 330mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 164133 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.77 EUR
44+0.48 EUR
100+0.3 EUR
500+0.23 EUR
1000+0.2 EUR
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BSV236SPH6327XTSA1 dgdl?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a30433580b37101358600cb67339f
BSV236SPH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 1.5A SOT363-6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PG-SOT363-PO
Vgs(th) (Max) @ Id: 1.2V @ 8µA
Power Dissipation (Max): 560mW (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 8386 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
26+0.82 EUR
43+0.5 EUR
100+0.31 EUR
500+0.24 EUR
1000+0.21 EUR
Mindestbestellmenge: 26 Stücke
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SN7002N H6327 SN7002N_Rev2.6_.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f6860601311934e76045d5
SN7002N H6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 200MA SOT23
auf Bestellung 5339 Stücke:
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BSC0901NSI BSC0901NSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f2aa7bdc30067
BSC0901NSI
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 28A 8TDSON
auf Bestellung 7499 Stücke:
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BSC0904NSI BSC0904NSI_Rev+2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f3073397339ef
BSC0904NSI
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 20A 8TDSON
auf Bestellung 324 Stücke:
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BSC22DN20NS3 G BSC22DN20NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b1582d2df1a48
BSC22DN20NS3 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 7A 8TDSON
auf Bestellung 11863 Stücke:
Lieferzeit 10-14 Tag (e)
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