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IPA65R190C6XKSA1 IPA65R190C6XKSA1 Infineon Technologies IPx65R190C6.pdf Description: MOSFET N-CH 650V 20.2A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO220-3-111
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
Produkt ist nicht verfügbar
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IPA65R190E6XKSA1 IPA65R190E6XKSA1 Infineon Technologies IPA65R190E6_2_0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30433004641301300747ef313b6b Description: MOSFET N-CH 650V 20.2A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO220-3-111
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
Produkt ist nicht verfügbar
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IPA65R310CFDXKSA1 IPA65R310CFDXKSA1 Infineon Technologies IPP65R310CFD_2_2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432f91014f012f9caff105741c Description: MOSFET N-CH 650V 11.4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 440µA
Supplier Device Package: PG-TO220-3-111
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
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IPA65R380C6XKSA1 IPA65R380C6XKSA1 Infineon Technologies IPA65R380C6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432ba3fa6f012bf2a58f67779f Description: MOSFET N-CH 650V 10.6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-3-111
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Produkt ist nicht verfügbar
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IPA65R420CFDXKSA1 IPA65R420CFDXKSA1 Infineon Technologies IPx65R420CFD.pdf Description: MOSFET N-CH 650V 8.7A TO220
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IPA65R600C6XKSA1 IPA65R600C6XKSA1 Infineon Technologies DS_448_IPx65R600C6.pdf Description: MOSFET N-CH 650V 7.3A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
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IPA65R660CFDXKSA1 IPA65R660CFDXKSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: MOSFET N-CH 650V 6A TO220
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IPI100N04S4H2AKSA1 IPI100N04S4H2AKSA1 Infineon Technologies IPx100N04S4-H2.pdf Description: MOSFET N-CH 40V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 25 V
Produkt ist nicht verfügbar
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IPI110N20N3GAKSA1 IPI110N20N3GAKSA1 Infineon Technologies IPP_I_110N20N3+G_IPB107N20N3+G+Rev2.3.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124968e7d1f18e7 Description: MOSFET N-CH 200V 88A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 88A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
Produkt ist nicht verfügbar
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IPI111N15N3GAKSA1 IPI111N15N3GAKSA1 Infineon Technologies Infineon-IPP_I111N15N3_IPB108N15N3-DS-v02_02-EN.pdf?fileId=db3a304325305e6d01254a5795541b4f Description: MOSFET N-CH 150V 83A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 83A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 160µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 75 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
2+8.94 EUR
50+4.69 EUR
100+4.28 EUR
500+3.56 EUR
Mindestbestellmenge: 2
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IPI120N04S401AKSA1 IPI120N04S401AKSA1 Infineon Technologies Infineon-IPP_B_I120N04S4_01-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c2ebd3b5d27&ack=t Description: MOSFET N-CH 40V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.15 EUR
10+4.73 EUR
100+3.35 EUR
Mindestbestellmenge: 3
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IPI120N04S402AKSA1 IPI120N04S402AKSA1 Infineon Technologies Infineon-IPP_B_I120N04S4_02-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c33093d5d37&ack=t Description: MOSFET N-CH 40V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10740 pF @ 25 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.59 EUR
10+2.45 EUR
100+1.77 EUR
500+1.72 EUR
Mindestbestellmenge: 5
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IPI200N25N3GAKSA1 IPI200N25N3GAKSA1 Infineon Technologies IPP_B_I_200N25N3+G+Rev2.4.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496b87e9f1971 Description: MOSFET N-CH 250V 64A TO262-3
Produkt ist nicht verfügbar
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IPI320N20N3GAKSA1 IPI320N20N3GAKSA1 Infineon Technologies IPP_B_I_320N20N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124967064ba184a Description: MOSFET N-CH 200V 34A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
Produkt ist nicht verfügbar
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IPI50R250CPXKSA1 IPI50R250CPXKSA1 Infineon Technologies IPI50R250CP_rev2.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a304320896aa20120d244f52350be Description: MOSFET N-CH 500V 13A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
Produkt ist nicht verfügbar
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IPI50R299CPXKSA1 IPI50R299CPXKSA1 Infineon Technologies IPI50R299CP_rev2.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a304320896aa20120d24ec76250de Description: MOSFET N-CH 500V 12A TO262-3
auf Bestellung 500 Stücke:
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IPI530N15N3GXKSA1 IPI530N15N3GXKSA1 Infineon Technologies IPD530N15N3_Rev2.5.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432662379201266a1f6dd2227c Description: MOSFET N-CH 150V 21A TO262-3
Produkt ist nicht verfügbar
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IPI600N25N3GAKSA1 IPI600N25N3GAKSA1 Infineon Technologies IPP_B_600N25N3+G+Rev2.3.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496c9548d199c Description: MOSFET N-CH 250V 25A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
Produkt ist nicht verfügbar
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IPI65R110CFDXKSA1 IPI65R110CFDXKSA1 Infineon Technologies Infineon-IPX65R110CFD-DS-v02_06-en.pdf?fileId=db3a30433004641301306abd8e2041b1 Description: MOSFET N-CH 650V 31.2A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Produkt ist nicht verfügbar
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IPI65R310CFDXKSA1 IPI65R310CFDXKSA1 Infineon Technologies IPP65R310CFD_2_2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432f91014f012f9caff105741c Description: MOSFET N-CH 650V 11.4A TO262-3
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IPI65R420CFDXKSA1 IPI65R420CFDXKSA1 Infineon Technologies IPx65R420CFD.pdf Description: MOSFET N-CH 650V 8.7A TO262
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IPI65R660CFDXKSA1 IPI65R660CFDXKSA1 Infineon Technologies Infineon-IPX65R660CFD-DS-v02_05-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432f29829e012f2efe7ac539b4 Description: MOSFET N-CH 650V 6A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
Produkt ist nicht verfügbar
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IPI80N04S403AKSA1 IPI80N04S403AKSA1 Infineon Technologies Infineon-IPP_B_I80N04S4_03-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c53fc8b5dab&ack=t Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 53µA
Supplier Device Package: PG-TO262-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5260 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 496 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.38 EUR
50+1.66 EUR
100+1.49 EUR
Mindestbestellmenge: 6
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IPI80N04S404AKSA1 IPI80N04S404AKSA1 Infineon Technologies Infineon-IPP_B_I80N04S4_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c71d4085dfa&ack=t Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TO262-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPI80N04S4L04AKSA1 IPI80N04S4L04AKSA1 Infineon Technologies IPx80N04S4L-04.pdf Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO262-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPI90N04S402AKSA1 IPI90N04S402AKSA1 Infineon Technologies Infineon-IPP_B_I90N04S4_02-DS-v01_01-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c7efe515e2f&ack=t Description: MOSFET N-CH 40V 90A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9430 pF @ 25 V
auf Bestellung 439 Stücke:
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IPP100N04S4H2AKSA1 IPP100N04S4H2AKSA1 Infineon Technologies IPx100N04S4-H2.pdf Description: MOSFET N-CH 40V 100A TO220-3-1
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IPP110N20NAAKSA1 IPP110N20NAAKSA1 Infineon Technologies IPP110N20NA_IPB107N20NA+Rev2.1.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a3043300464130130307ce52a20a3 Description: MOSFET N-CH 200V 88A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 88A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1036 Stücke:
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2+13.32 EUR
50+7.64 EUR
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IPP120N04S401AKSA1 IPP120N04S401AKSA1 Infineon Technologies IPx120N04S4-01.pdf Description: MOSFET N-CH 40V 120A TO220-3-1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
Produkt ist nicht verfügbar
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IPP120N04S402AKSA1 IPP120N04S402AKSA1 Infineon Technologies Infineon-IPP_B_I120N04S4_02-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c33093d5d37&ack=t Description: MOSFET N-CH 40V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10740 pF @ 25 V
auf Bestellung 302 Stücke:
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10+2.96 EUR
100+2.13 EUR
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IPP65R380C6XKSA1 IPP65R380C6XKSA1 Infineon Technologies IPP65R380C6+2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432ba3fa6f012bf2d555ca77de Description: MOSFET N-CH 650V 10.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Produkt ist nicht verfügbar
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IPP65R600C6XKSA1 IPP65R600C6XKSA1 Infineon Technologies IPP65R600C6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432ac1eb91012ac74e318c2c70 Description: MOSFET N-CH 650V 7.3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
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IPP80N04S403AKSA1 IPP80N04S403AKSA1 Infineon Technologies Infineon-IPP_B_I80N04S4_03-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c53fc8b5dab&ack=t Description: MOSFET N-CH 40V 80A TO220-3-1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 53µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5260 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPP80N04S404AKSA1 IPP80N04S404AKSA1 Infineon Technologies Infineon-IPP_B_I80N04S4_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c71d4085dfa&ack=t Description: MOSFET N-CH 40V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 25 V
Produkt ist nicht verfügbar
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IPP90N04S402AKSA1 IPP90N04S402AKSA1 Infineon Technologies Infineon-IPP_B_I90N04S4_02-DS-v01_01-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c7efe515e2f&ack=t Description: MOSFET N-CH 40V 90A TO220-3-1
Produkt ist nicht verfügbar
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IPW65R190C6FKSA1 IPW65R190C6FKSA1 Infineon Technologies IPW65R190C6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433004641301300803924c3d8c Description: MOSFET N-CH 650V 20.2A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
Produkt ist nicht verfügbar
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IPW65R280C6FKSA1 IPW65R280C6FKSA1 Infineon Technologies IPW65R280C6_2_0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30432a7fedfc012a8aceded858e0 Description: MOSFET N-CH 650V 13.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Produkt ist nicht verfügbar
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IPW65R660CFDFKSA1 IPW65R660CFDFKSA1 Infineon Technologies IPW65R660CFD_2.41.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432f29829e012f2efe7ac539b4 Description: MOSFET N-CH 700V 6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
Produkt ist nicht verfügbar
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SGP20N60HSXKSA1 SGP20N60HSXKSA1 Infineon Technologies SGx20N60HS.pdf Description: IGBT NPT 600V 36A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 20A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 178 W
Produkt ist nicht verfügbar
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SPP15P10PHXKSA1 SPP15P10PHXKSA1 Infineon Technologies SPP15P10PH.pdf Description: MOSFET P-CH 100V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1.54mA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Produkt ist nicht verfügbar
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CY7C65634-28LTXC CY7C65634-28LTXC Infineon Technologies download Description: IC USB HUB CTRLR 2PORT LP 28QFN
Packaging: Tray
Package / Case: 28-WFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 5.25V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 28-QFN (5x5)
DigiKey Programmable: Not Verified
auf Bestellung 8599 Stücke:
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6+3.40 EUR
10+2.52 EUR
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100+2.06 EUR
490+1.88 EUR
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CY7C65634-48AXC CY7C65634-48AXC Infineon Technologies download Description: IC USB HUB CTRL 2PORT 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 5.25V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 48-TQFP (7x7)
DigiKey Programmable: Not Verified
auf Bestellung 1460 Stücke:
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CY7C65632-28LTXC CY7C65632-28LTXC Infineon Technologies download Description: IC USB HUB CTRLR 4PORT LP 28QFN
Packaging: Tray
Package / Case: 28-WFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 5.25V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 28-QFN (5x5)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1964 Stücke:
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CY7C65632-48AXC CY7C65632-48AXC Infineon Technologies download Description: IC USB HUB CTRLR 4PORT LP 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 5.25V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1573 Stücke:
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CY7C65642-48AXC CY7C65642-48AXC Infineon Technologies Infineon-CY7C65642_HX2VL_VERY_LOW-POWER_USB_2.0_TETRAHUB_CONTROLLER-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecba5984534&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC USB HUB CTRLR 4PORT LP 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Function: Controller
Interface: I2C, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 5.25V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 48-TQFP (7x7)
DigiKey Programmable: Not Verified
auf Bestellung 633 Stücke:
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4+5.76 EUR
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CY8C20446AS-24LQXI CY8C20446AS-24LQXI Infineon Technologies CY8C20336H%2C446H.pdf Description: IC CAPSENSE AP 16KB 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
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3+7.20 EUR
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CY14B101Q2A-SXI CY14B101Q2A-SXI Infineon Technologies Infineon-CY14C101Q_CY14B101Q_CY14E101Q_1_MBIT_(128K_X_8)_SERIAL_(SPI)_NVSRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfce093450&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration- Description: IC NVSRAM 1MBIT SPI 40MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 968 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.55 EUR
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25+15.79 EUR
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291+14.45 EUR
582+14.09 EUR
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CY7C1413KV18-333BZXI CY7C1413KV18-333BZXI Infineon Technologies Infineon-CY7C1411KV18_CY7C1426KV18_CY7C1413KV18_CY7C1415KV18_36-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd4aea2fa7&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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1+100.23 EUR
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CY7C2265KV18-550BZXC CY7C2265KV18-550BZXC Infineon Technologies Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
auf Bestellung 10 Stücke:
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1+194.15 EUR
10+172.25 EUR
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CY7C1480BV25-200BZXC CY7C1480BV25-200BZXC Infineon Technologies Infineon-CY7C1480BV25_72-Mbit_(2_M_36)_Pipelined_Sync_SRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4514c39be Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1480BV33-250BZXC CY7C1480BV33-250BZXC Infineon Technologies download Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1471BV33-133BZI CY7C1471BV33-133BZI Infineon Technologies download Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR2130STRPBF IR2130STRPBF Infineon Technologies ir2130.pdf?fileId=5546d462533600a4015355c8757d169a Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 6681 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.37 EUR
10+4.04 EUR
25+3.71 EUR
100+3.34 EUR
250+3.17 EUR
500+3.06 EUR
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CY7C1643KV18-450BZC CY7C1643KV18-450BZC Infineon Technologies download Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C2663KV18-450BZI CY7C2663KV18-450BZI Infineon Technologies Infineon-CY7C2663KV18_CY7C2665KV18_144-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec22b793711 Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
auf Bestellung 75 Stücke:
Lieferzeit 10-14 Tag (e)
1+692.79 EUR
10+614.43 EUR
25+585.67 EUR
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CY7C1643KV18-400BZC CY7C1643KV18-400BZC Infineon Technologies download Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1618KV18-333BZXC CY7C1618KV18-333BZXC Infineon Technologies Infineon-CY7C1618KV18_CY7C1620KV18_144-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec241b9372f Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1612KV18-333BZXC CY7C1612KV18-333BZXC Infineon Technologies Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1613KV18-300BZXC CY7C1613KV18-300BZXC Infineon Technologies Infineon-CY7C1613KV18_CY7C1615KV18_144-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec23aab3726 Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 8M x 18
Produkt ist nicht verfügbar
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CY7C1612KV18-250BZXC CY7C1612KV18-250BZXC Infineon Technologies Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPA65R190C6XKSA1 IPx65R190C6.pdf
IPA65R190C6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 20.2A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO220-3-111
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
Produkt ist nicht verfügbar
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IPA65R190E6XKSA1 IPA65R190E6_2_0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30433004641301300747ef313b6b
IPA65R190E6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 20.2A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO220-3-111
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
Produkt ist nicht verfügbar
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IPA65R310CFDXKSA1 IPP65R310CFD_2_2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432f91014f012f9caff105741c
IPA65R310CFDXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11.4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 440µA
Supplier Device Package: PG-TO220-3-111
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
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IPA65R380C6XKSA1 IPA65R380C6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432ba3fa6f012bf2a58f67779f
IPA65R380C6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 10.6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-3-111
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Produkt ist nicht verfügbar
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IPA65R420CFDXKSA1 IPx65R420CFD.pdf
IPA65R420CFDXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 8.7A TO220
Produkt ist nicht verfügbar
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IPA65R600C6XKSA1 DS_448_IPx65R600C6.pdf
IPA65R600C6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
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IPA65R660CFDXKSA1 Part_Number_Guide_Web.pdf
IPA65R660CFDXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 6A TO220
Produkt ist nicht verfügbar
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IPI100N04S4H2AKSA1 IPx100N04S4-H2.pdf
IPI100N04S4H2AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 25 V
Produkt ist nicht verfügbar
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IPI110N20N3GAKSA1 IPP_I_110N20N3+G_IPB107N20N3+G+Rev2.3.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124968e7d1f18e7
IPI110N20N3GAKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 88A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 88A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
Produkt ist nicht verfügbar
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IPI111N15N3GAKSA1 Infineon-IPP_I111N15N3_IPB108N15N3-DS-v02_02-EN.pdf?fileId=db3a304325305e6d01254a5795541b4f
IPI111N15N3GAKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 83A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 83A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 160µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 75 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.94 EUR
50+4.69 EUR
100+4.28 EUR
500+3.56 EUR
Mindestbestellmenge: 2
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IPI120N04S401AKSA1 Infineon-IPP_B_I120N04S4_01-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c2ebd3b5d27&ack=t
IPI120N04S401AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.15 EUR
10+4.73 EUR
100+3.35 EUR
Mindestbestellmenge: 3
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IPI120N04S402AKSA1 Infineon-IPP_B_I120N04S4_02-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c33093d5d37&ack=t
IPI120N04S402AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10740 pF @ 25 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.59 EUR
10+2.45 EUR
100+1.77 EUR
500+1.72 EUR
Mindestbestellmenge: 5
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IPI200N25N3GAKSA1 IPP_B_I_200N25N3+G+Rev2.4.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496b87e9f1971
IPI200N25N3GAKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 64A TO262-3
Produkt ist nicht verfügbar
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IPI320N20N3GAKSA1 IPP_B_I_320N20N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124967064ba184a
IPI320N20N3GAKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 34A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
Produkt ist nicht verfügbar
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IPI50R250CPXKSA1 IPI50R250CP_rev2.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a304320896aa20120d244f52350be
IPI50R250CPXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 13A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
Produkt ist nicht verfügbar
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IPI50R299CPXKSA1 IPI50R299CP_rev2.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a304320896aa20120d24ec76250de
IPI50R299CPXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 12A TO262-3
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
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IPI530N15N3GXKSA1 IPD530N15N3_Rev2.5.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432662379201266a1f6dd2227c
IPI530N15N3GXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 21A TO262-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI600N25N3GAKSA1 IPP_B_600N25N3+G+Rev2.3.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496c9548d199c
IPI600N25N3GAKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 25A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
Produkt ist nicht verfügbar
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IPI65R110CFDXKSA1 Infineon-IPX65R110CFD-DS-v02_06-en.pdf?fileId=db3a30433004641301306abd8e2041b1
IPI65R110CFDXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 31.2A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Produkt ist nicht verfügbar
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IPI65R310CFDXKSA1 IPP65R310CFD_2_2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432f91014f012f9caff105741c
IPI65R310CFDXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11.4A TO262-3
Produkt ist nicht verfügbar
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IPI65R420CFDXKSA1 IPx65R420CFD.pdf
IPI65R420CFDXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 8.7A TO262
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI65R660CFDXKSA1 Infineon-IPX65R660CFD-DS-v02_05-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432f29829e012f2efe7ac539b4
IPI65R660CFDXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 6A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI80N04S403AKSA1 Infineon-IPP_B_I80N04S4_03-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c53fc8b5dab&ack=t
IPI80N04S403AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 53µA
Supplier Device Package: PG-TO262-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5260 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 496 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.38 EUR
50+1.66 EUR
100+1.49 EUR
Mindestbestellmenge: 6
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IPI80N04S404AKSA1 Infineon-IPP_B_I80N04S4_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c71d4085dfa&ack=t
IPI80N04S404AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TO262-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPI80N04S4L04AKSA1 IPx80N04S4L-04.pdf
IPI80N04S4L04AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO262-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPI90N04S402AKSA1 Infineon-IPP_B_I90N04S4_02-DS-v01_01-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c7efe515e2f&ack=t
IPI90N04S402AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 90A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9430 pF @ 25 V
auf Bestellung 439 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.12 EUR
50+2.56 EUR
100+2.31 EUR
Mindestbestellmenge: 4
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IPP100N04S4H2AKSA1 IPx100N04S4-H2.pdf
IPP100N04S4H2AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A TO220-3-1
Produkt ist nicht verfügbar
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IPP110N20NAAKSA1 IPP110N20NA_IPB107N20NA+Rev2.1.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a3043300464130130307ce52a20a3
IPP110N20NAAKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 88A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 88A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1036 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.32 EUR
50+7.64 EUR
Mindestbestellmenge: 2
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IPP120N04S401AKSA1 IPx120N04S4-01.pdf
IPP120N04S401AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 120A TO220-3-1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
Produkt ist nicht verfügbar
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IPP120N04S402AKSA1 Infineon-IPP_B_I120N04S4_02-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c33093d5d37&ack=t
IPP120N04S402AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10740 pF @ 25 V
auf Bestellung 302 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.31 EUR
10+2.96 EUR
100+2.13 EUR
Mindestbestellmenge: 5
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IPP65R380C6XKSA1 IPP65R380C6+2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432ba3fa6f012bf2d555ca77de
IPP65R380C6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 10.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Produkt ist nicht verfügbar
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IPP65R600C6XKSA1 IPP65R600C6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432ac1eb91012ac74e318c2c70
IPP65R600C6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP80N04S403AKSA1 Infineon-IPP_B_I80N04S4_03-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c53fc8b5dab&ack=t
IPP80N04S403AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO220-3-1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 53µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5260 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP80N04S404AKSA1 Infineon-IPP_B_I80N04S4_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c71d4085dfa&ack=t
IPP80N04S404AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP90N04S402AKSA1 Infineon-IPP_B_I90N04S4_02-DS-v01_01-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c7efe515e2f&ack=t
IPP90N04S402AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 90A TO220-3-1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW65R190C6FKSA1 IPW65R190C6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433004641301300803924c3d8c
IPW65R190C6FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 20.2A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
Produkt ist nicht verfügbar
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IPW65R280C6FKSA1 IPW65R280C6_2_0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30432a7fedfc012a8aceded858e0
IPW65R280C6FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 13.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Produkt ist nicht verfügbar
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IPW65R660CFDFKSA1 IPW65R660CFD_2.41.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432f29829e012f2efe7ac539b4
IPW65R660CFDFKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
Produkt ist nicht verfügbar
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SGP20N60HSXKSA1 SGx20N60HS.pdf
SGP20N60HSXKSA1
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 36A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 20A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 178 W
Produkt ist nicht verfügbar
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SPP15P10PHXKSA1 SPP15P10PH.pdf
SPP15P10PHXKSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1.54mA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Produkt ist nicht verfügbar
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CY7C65634-28LTXC download
CY7C65634-28LTXC
Hersteller: Infineon Technologies
Description: IC USB HUB CTRLR 2PORT LP 28QFN
Packaging: Tray
Package / Case: 28-WFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 5.25V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 28-QFN (5x5)
DigiKey Programmable: Not Verified
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Anzahl Preis
6+3.40 EUR
10+2.52 EUR
25+2.30 EUR
100+2.06 EUR
490+1.88 EUR
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CY7C65634-48AXC download
CY7C65634-48AXC
Hersteller: Infineon Technologies
Description: IC USB HUB CTRL 2PORT 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 5.25V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 48-TQFP (7x7)
DigiKey Programmable: Not Verified
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Anzahl Preis
4+5.40 EUR
10+4.06 EUR
25+3.73 EUR
100+3.36 EUR
250+3.18 EUR
500+3.07 EUR
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CY7C65632-28LTXC download
CY7C65632-28LTXC
Hersteller: Infineon Technologies
Description: IC USB HUB CTRLR 4PORT LP 28QFN
Packaging: Tray
Package / Case: 28-WFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 5.25V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 28-QFN (5x5)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1964 Stücke:
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Anzahl Preis
5+3.98 EUR
10+2.96 EUR
25+2.70 EUR
100+2.42 EUR
490+2.21 EUR
980+2.14 EUR
1470+2.11 EUR
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CY7C65632-48AXC download
CY7C65632-48AXC
Hersteller: Infineon Technologies
Description: IC USB HUB CTRLR 4PORT LP 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 5.25V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1573 Stücke:
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Anzahl Preis
4+5.40 EUR
10+4.06 EUR
25+3.73 EUR
100+3.36 EUR
250+3.18 EUR
500+3.07 EUR
1000+2.99 EUR
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CY7C65642-48AXC Infineon-CY7C65642_HX2VL_VERY_LOW-POWER_USB_2.0_TETRAHUB_CONTROLLER-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecba5984534&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C65642-48AXC
Hersteller: Infineon Technologies
Description: IC USB HUB CTRLR 4PORT LP 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Function: Controller
Interface: I2C, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 5.25V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 48-TQFP (7x7)
DigiKey Programmable: Not Verified
auf Bestellung 633 Stücke:
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Anzahl Preis
4+5.76 EUR
10+4.33 EUR
25+3.98 EUR
100+3.59 EUR
250+3.40 EUR
500+3.29 EUR
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CY8C20446AS-24LQXI CY8C20336H%2C446H.pdf
CY8C20446AS-24LQXI
Hersteller: Infineon Technologies
Description: IC CAPSENSE AP 16KB 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
auf Bestellung 312 Stücke:
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Anzahl Preis
3+7.20 EUR
10+6.47 EUR
25+6.12 EUR
80+5.30 EUR
230+5.03 EUR
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CY14B101Q2A-SXI Infineon-CY14C101Q_CY14B101Q_CY14E101Q_1_MBIT_(128K_X_8)_SERIAL_(SPI)_NVSRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfce093450&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-
CY14B101Q2A-SXI
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 40MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 968 Stücke:
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Anzahl Preis
2+17.55 EUR
10+16.29 EUR
25+15.79 EUR
97+15.04 EUR
194+14.67 EUR
291+14.45 EUR
582+14.09 EUR
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CY7C1413KV18-333BZXI Infineon-CY7C1411KV18_CY7C1426KV18_CY7C1413KV18_CY7C1415KV18_36-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd4aea2fa7&utm_source=cypress&utm_medium=referral&utm_campaign
CY7C1413KV18-333BZXI
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
auf Bestellung 2 Stücke:
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Anzahl Preis
1+100.23 EUR
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CY7C2265KV18-550BZXC Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b
CY7C2265KV18-550BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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Anzahl Preis
1+194.15 EUR
10+172.25 EUR
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CY7C1480BV25-200BZXC Infineon-CY7C1480BV25_72-Mbit_(2_M_36)_Pipelined_Sync_SRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4514c39be
CY7C1480BV25-200BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1480BV33-250BZXC download
CY7C1480BV33-250BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1471BV33-133BZI download
CY7C1471BV33-133BZI
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR2130STRPBF ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
IR2130STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 6681 Stücke:
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Anzahl Preis
4+5.37 EUR
10+4.04 EUR
25+3.71 EUR
100+3.34 EUR
250+3.17 EUR
500+3.06 EUR
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CY7C1643KV18-450BZC download
CY7C1643KV18-450BZC
Hersteller: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C2663KV18-450BZI Infineon-CY7C2663KV18_CY7C2665KV18_144-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec22b793711
CY7C2663KV18-450BZI
Hersteller: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
auf Bestellung 75 Stücke:
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Anzahl Preis
1+692.79 EUR
10+614.43 EUR
25+585.67 EUR
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CY7C1643KV18-400BZC download
CY7C1643KV18-400BZC
Hersteller: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1618KV18-333BZXC Infineon-CY7C1618KV18_CY7C1620KV18_144-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec241b9372f
CY7C1618KV18-333BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1612KV18-333BZXC Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
CY7C1612KV18-333BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1613KV18-300BZXC Infineon-CY7C1613KV18_CY7C1615KV18_144-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec23aab3726
CY7C1613KV18-300BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 8M x 18
Produkt ist nicht verfügbar
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CY7C1612KV18-250BZXC Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
CY7C1612KV18-250BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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