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IPP034N08N5AKSA1 IPP034N08N5AKSA1 INFINEON TECHNOLOGIES IPP034N08N5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BTS3080TF BTS3080TF INFINEON TECHNOLOGIES BTS3080TF.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.16Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
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BTS3050TF BTS3050TF INFINEON TECHNOLOGIES BTS3050TF.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; PG-TO252-3
Mounting: SMD
Output current: 4A
Type of integrated circuit: power switch
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: HITFET®
Turn-on time: 115µs
Output voltage: 40V
Case: PG-TO252-3
Turn-off time: 210µs
Kind of integrated circuit: low-side
Number of channels: 1
On-state resistance: 0.1Ω
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IPI50R350CPXKSA1 IPI50R350CPXKSA1 INFINEON TECHNOLOGIES IPI50R350CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10A; 89W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Power dissipation: 89W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: THT
Kind of channel: enhancement
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IPP048N12N3GXKSA1 IPP048N12N3GXKSA1 INFINEON TECHNOLOGIES IPP048N12N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Mounting: THT
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 4.8mΩ
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IPP114N12N3GXKSA1 IPP114N12N3GXKSA1 INFINEON TECHNOLOGIES IPP114N12N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 75A; 136W; PG-TO220-3
Mounting: THT
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 75A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 11.4mΩ
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IPP041N12N3GXKSA1 IPP041N12N3GXKSA1 INFINEON TECHNOLOGIES IPP041N12N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Mounting: THT
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 4.1mΩ
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IKW08N120CS7XKSA1 IKW08N120CS7XKSA1 INFINEON TECHNOLOGIES Infineon-IKW08N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97dbfdd05a9 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 14A; 53W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 14A
Power dissipation: 53W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 0.5µs
Technology: TRENCHSTOP™
Turn-on time: 31ns
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IPB024N10N5ATMA1 INFINEON TECHNOLOGIES infineon-ipb024n10n5-datasheet-cn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 250W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 250W
Case: TO263-7
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 138nC
Kind of channel: enhancement
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IPB024N08N5ATMA1 IPB024N08N5ATMA1 INFINEON TECHNOLOGIES IPB024N08N5-dte.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Kind of channel: enhancement
Mounting: SMD
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 2.4mΩ
Power dissipation: 375W
Gate-source voltage: ±20V
Case: PG-TO263-3
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IPP024N08NF2SAKMA1 IPP024N08NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP024N08NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176f70288ae1698 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 182A; 214W; TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 182A
Gate charge: 89nC
On-state resistance: 2.4mΩ
Power dissipation: 214W
Case: TO220-3
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IKZA50N65RH5XKSA1 INFINEON TECHNOLOGIES Infineon-IKZA50N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc28569031b5 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 305W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 305W
Case: TO247-4
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
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IPC50N04S5-5R8 IPC50N04S5-5R8 INFINEON TECHNOLOGIES IPC50N04S55R8.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18nC
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IPC50N04S5L-5R5 IPC50N04S5L-5R5 INFINEON TECHNOLOGIES IPC50N04S5L5R5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 5.5mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 23nC
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IAUA250N04S6N007AUMA1 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1350A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 1350A
Gate charge: 151nC
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IAUA250N04S6N007EAUMA1 INFINEON TECHNOLOGIES Infineon-IAUA250N04S6N007E-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017fac29beb03f29 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1300A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Power dissipation: 192W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.83Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 1.3kA
Gate charge: 128nC
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IAUA250N04S6N005AUMA1 INFINEON TECHNOLOGIES Infineon-IAUA250N04S6N005-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017fac2a170d3f38 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 62A; Idm: 1500A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 1.5kA
Gate charge: 170nC
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IAUA250N04S6N006AUMA1 INFINEON TECHNOLOGIES InfineonIAUA250N04S6N006DataSheetv0100EN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 57A; Idm: 1500A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 57A
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 1.5kA
Gate charge: 169nC
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IAUA250N04S6N008AUMA1 INFINEON TECHNOLOGIES Infineon-IAUA250N04S6N008-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017fac2a23773f3b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 51A; Idm: 1100A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 51A
Power dissipation: 172W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 960µΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 1100A
Gate charge: 109nC
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IRF7807ZTRPBF IRF7807ZTRPBF INFINEON TECHNOLOGIES irf7807zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IPP90R800C3XKSA2 IPP90R800C3XKSA2 INFINEON TECHNOLOGIES Infineon-IPP90R800C3-DS-v01_00-en.pdf?fileId=db3a30432313ff5e0123a8b1344d5c34 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6.9A; 104W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6.9A
Case: TO220-3
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhancement
Power dissipation: 104W
Gate charge: 42nC
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IPN50R800CEATMA1 IPN50R800CEATMA1 INFINEON TECHNOLOGIES IPN50R800CE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 5W; PG-SOT223
Mounting: SMD
Power dissipation: 5W
Gate charge: 12.4nC
Polarisation: unipolar
Technology: CoolMOS™ CE
Drain current: 4.8A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT223
On-state resistance: 0.8Ω
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IPI90R800C3XKSA1 IPI90R800C3XKSA1 INFINEON TECHNOLOGIES IPI90R800C3XKSA1-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhancement
Power dissipation: 104W
Technology: CoolMOS™
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IPD60R800CEAUMA1 IPD60R800CEAUMA1 INFINEON TECHNOLOGIES IPD%2CIPA60R800CE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.4A; 74W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.4A
Power dissipation: 74W
Case: DPAK; TO252
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 17.2nC
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IPW90R800C3FKSA1 IPW90R800C3FKSA1 INFINEON TECHNOLOGIES IPW90R800C3_1.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30431b3e89eb011b8db526a81095 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPD60R800CEAUMA1 IPD60R800CEAUMA1 INFINEON TECHNOLOGIES IPD%2CIPA60R800CE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 8.4A; 74W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 8.4A
Power dissipation: 74W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 17.2nC
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IRFB5615PBF IRFB5615PBF INFINEON TECHNOLOGIES irfb5615pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 35A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
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BAT6405E6327HTSA1 BAT6405E6327HTSA1 INFINEON TECHNOLOGIES BAT6402VH6327XTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
Max. forward voltage: 0.75V
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IPD26N06S2L35ATMA2 IPD26N06S2L35ATMA2 INFINEON TECHNOLOGIES IPD26N06S2L35.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 22A; Idm: 120A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel
Kind of channel: enhancement
Technology: OptiMOS™
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IPB026N06NATMA1 IPB026N06NATMA1 INFINEON TECHNOLOGIES IPB026N06N-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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CY8CMBR3116-LQXI CY8CMBR3116-LQXI INFINEON TECHNOLOGIES Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN24
Case: QFN24
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
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SLB9670VQ20FW785XTMA1 INFINEON TECHNOLOGIES Infineon-SLB%209670VQ2.0-DataSheet-v01_04-EN.pdf?fileId=5546d4626fc1ce0b016fc78270350cd6 Category: Unclassified
Description: SLB9670VQ20FW785XTMA1
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PVA3354NSPBF INFINEON TECHNOLOGIES IRSDS10619-1.pdf?t.download=true&u=5oefqw Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PVA
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 150mA
Manufacturer series: PVA
On-state resistance: 24Ω
Mounting: SMT
Case: SMD8
Body dimensions: 9.39x6.47x3.93mm
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
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S80KS2564GACHV040 INFINEON TECHNOLOGIES Infineon-Data_Sheet_HYPERRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018050aef7544588 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...105°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
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S80KS2562GABHI020 INFINEON TECHNOLOGIES Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
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S80KS2562GABHB023 INFINEON TECHNOLOGIES Infineon-S80KS2562_1.8_V_256-Mb_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd82db3d308ae Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...105°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
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S80KS2563GABHI020 INFINEON TECHNOLOGIES download Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
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S80KS2564GACHI040 INFINEON TECHNOLOGIES Infineon-Data_Sheet_HYPERRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018050aef7544588 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
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S80KS2564GACHI043 INFINEON TECHNOLOGIES Infineon-Data_Sheet_HYPERRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018050aef7544588 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
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S80KS2564GACHV043 INFINEON TECHNOLOGIES Infineon-Data_Sheet_HYPERRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018050aef7544588 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...105°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
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ITS4880R ITS4880R INFINEON TECHNOLOGIES ITS4880R.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.625A; Ch: 8; N-Channel; SMD; BSSOP36
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.625A
Number of channels: 8
Kind of output: N-Channel
Mounting: SMD
Case: BSSOP36
Supply voltage: 11...45V DC
Technology: Industrial PROFET
On-state resistance: 0.15Ω
Produkt ist nicht verfügbar
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BSC059N04LSGATMA1 BSC059N04LSGATMA1 INFINEON TECHNOLOGIES BSC059N04LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 62A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Kind of channel: enhancement
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BSC016N06NSATMA1 BSC016N06NSATMA1 INFINEON TECHNOLOGIES BSC016N06NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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BTS3405G BTS3405G INFINEON TECHNOLOGIES BTS3405G.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.35A; Ch: 2; N-Channel; SMD; HITFET®
Mounting: SMD
Output current: 0.35A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: HITFET®
Output voltage: 10V
Case: PG-DSO-8-25
Kind of integrated circuit: low-side
Number of channels: 2
On-state resistance: 0.35Ω
auf Bestellung 2050 Stücke:
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CY8C4013SXI-400 INFINEON TECHNOLOGIES Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Infineon Technologies microcontrollers
Description: CY8C4013SXI-400
auf Bestellung 2716 Stücke:
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BGS12SN6E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGS12SN6-DS-v01_02-en.pdf?fileId=db3a30433f1b26e8013f2db58bc03856 Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Output configuration: SPDT
Number of channels: 2
Case: TSNP6
Supply voltage: 1.8...3.5V DC
Mounting: SMD
Bandwidth: 0.1...6GHz
Application: telecommunication
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IRFR4615TRLPBF IRFR4615TRLPBF INFINEON TECHNOLOGIES irfr4615pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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DD750S65K3NOSA1 INFINEON TECHNOLOGIES Category: Diode modules
Description: Module: diode
Type of semiconductor module: diode
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BSO110N03MSGXUMA1 BSO110N03MSGXUMA1 INFINEON TECHNOLOGIES BSO110N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.1A; 1.56W; PG-DSO-8
Power dissipation: 1.56W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 12.1A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-DSO-8
On-state resistance: 11mΩ
Mounting: SMD
auf Bestellung 2483 Stücke:
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CY7C53150-20AXI INFINEON TECHNOLOGIES Infineon-CY7C53150_CY7C53120_Neuron_Chip_Network_Processor-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca599a4309&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Ethernet interfaces -integrated circuits
Description: CY7C53150-20AXI
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TZ240N36KOF TZ240N36KOF INFINEON TECHNOLOGIES TZ240N36KOF.pdf Category: Thyristor modules
Description: Module: thyristor; single thyristor; 3.6kV; 240A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 3.6kV
Load current: 240A
Case: BG-PB501-1
Max. forward voltage: 3.43V
Max. forward impulse current: 6.1kA
Gate current: 300mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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BCR148SH6327 BCR148SH6327 INFINEON TECHNOLOGIES BCR148.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 47kΩ
Mounting: SMD
Base resistor: 47kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Base-emitter resistor: 47kΩ
Case: SOT363
Frequency: 100MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
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BSP317PH6327XTSA1 BSP317PH6327XTSA1 INFINEON TECHNOLOGIES BSP317PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -0.43A
Kind of channel: enhancement
Drain-source voltage: -250V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT223
On-state resistance: 4Ω
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TT142N14KOF TT142N14KOF INFINEON TECHNOLOGIES TT142N14KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 142A; BG-PB34-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 142A
Case: BG-PB34-1
Max. forward voltage: 1.56V
Max. forward impulse current: 4.8kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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BTS50080-1TMB BTS50080-1TMB INFINEON TECHNOLOGIES BTS50080-1TMB.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT
Type of integrated circuit: power switch
Case: PG-TO220-7-12
Mounting: THT
Supply voltage: 5.5...38V DC
Output current: 9.5A
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 7mΩ
auf Bestellung 494 Stücke:
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BSS315PH6327XTSA1 BSS315PH6327XTSA1 INFINEON TECHNOLOGIES BSS315PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of channel: enhancement
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BSS126IXTSA1 BSS126IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS126I-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a017376e5a5f370d1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21mA; 500mW; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
On-state resistance: 280Ω
Mounting: SMD
Gate charge: 1.4nC
Application: automotive industry
Produkt ist nicht verfügbar
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IPB012N04NF2SATMA1 IPB012N04NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB012N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12ad796af4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 40V; 197A; 250W; D2PAK,TO263
Case: D2PAK; TO263
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate charge: 159nC
On-state resistance: 1.25mΩ
Drain-source voltage: 40V
Drain current: 197A
Power dissipation: 250W
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TLD21413EPXUMA1 TLD21413EPXUMA1 INFINEON TECHNOLOGIES TLD21413EP.pdf Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 80mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 80mA
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Produkt ist nicht verfügbar
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TLE42764GVATMA1 TLE42764GVATMA1 INFINEON TECHNOLOGIES TLE42764.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2.5...20V
Output current: 0.4A
Case: PG-TO263-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.5...41V
auf Bestellung 695 Stücke:
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IPP034N08N5AKSA1 IPP034N08N5-DTE.pdf
IPP034N08N5AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS3080TF BTS3080TF.pdf
BTS3080TF
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.16Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
Produkt ist nicht verfügbar
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BTS3050TF BTS3050TF.pdf
BTS3050TF
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; PG-TO252-3
Mounting: SMD
Output current: 4A
Type of integrated circuit: power switch
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: HITFET®
Turn-on time: 115µs
Output voltage: 40V
Case: PG-TO252-3
Turn-off time: 210µs
Kind of integrated circuit: low-side
Number of channels: 1
On-state resistance: 0.1Ω
Produkt ist nicht verfügbar
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IPI50R350CPXKSA1 IPI50R350CP-DTE.pdf
IPI50R350CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10A; 89W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Power dissipation: 89W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP048N12N3GXKSA1 IPP048N12N3G-DTE.pdf
IPP048N12N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Mounting: THT
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 4.8mΩ
auf Bestellung 507 Stücke:
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IPP114N12N3GXKSA1 IPP114N12N3G-DTE.pdf
IPP114N12N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 75A; 136W; PG-TO220-3
Mounting: THT
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 75A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 11.4mΩ
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IPP041N12N3GXKSA1 IPP041N12N3G-DTE.pdf
IPP041N12N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Mounting: THT
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 4.1mΩ
auf Bestellung 48 Stücke:
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IKW08N120CS7XKSA1 Infineon-IKW08N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97dbfdd05a9
IKW08N120CS7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 14A; 53W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 14A
Power dissipation: 53W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 0.5µs
Technology: TRENCHSTOP™
Turn-on time: 31ns
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IPB024N10N5ATMA1 infineon-ipb024n10n5-datasheet-cn.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 250W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 250W
Case: TO263-7
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 138nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPB024N08N5ATMA1 IPB024N08N5-dte.pdf
IPB024N08N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Kind of channel: enhancement
Mounting: SMD
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 2.4mΩ
Power dissipation: 375W
Gate-source voltage: ±20V
Case: PG-TO263-3
Produkt ist nicht verfügbar
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IPP024N08NF2SAKMA1 Infineon-IPP024N08NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176f70288ae1698
IPP024N08NF2SAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 182A; 214W; TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 182A
Gate charge: 89nC
On-state resistance: 2.4mΩ
Power dissipation: 214W
Case: TO220-3
Produkt ist nicht verfügbar
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IKZA50N65RH5XKSA1 Infineon-IKZA50N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc28569031b5
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 305W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 305W
Case: TO247-4
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
auf Bestellung 960 Stücke:
Lieferzeit 14-21 Tag (e)
Mindestbestellmenge: 240 Stücke
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IPC50N04S5-5R8 IPC50N04S55R8.pdf
IPC50N04S5-5R8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18nC
Produkt ist nicht verfügbar
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IPC50N04S5L-5R5 IPC50N04S5L5R5.pdf
IPC50N04S5L-5R5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 5.5mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 23nC
Produkt ist nicht verfügbar
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IAUA250N04S6N007AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1350A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 1350A
Gate charge: 151nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IAUA250N04S6N007EAUMA1 Infineon-IAUA250N04S6N007E-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017fac29beb03f29
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1300A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Power dissipation: 192W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.83Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 1.3kA
Gate charge: 128nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IAUA250N04S6N005AUMA1 Infineon-IAUA250N04S6N005-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017fac2a170d3f38
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 62A; Idm: 1500A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 1.5kA
Gate charge: 170nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IAUA250N04S6N006AUMA1 InfineonIAUA250N04S6N006DataSheetv0100EN.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 57A; Idm: 1500A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 57A
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 1.5kA
Gate charge: 169nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IAUA250N04S6N008AUMA1 Infineon-IAUA250N04S6N008-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017fac2a23773f3b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 51A; Idm: 1100A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 51A
Power dissipation: 172W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 960µΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 1100A
Gate charge: 109nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IRF7807ZTRPBF irf7807zpbf.pdf
IRF7807ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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IPP90R800C3XKSA2 Infineon-IPP90R800C3-DS-v01_00-en.pdf?fileId=db3a30432313ff5e0123a8b1344d5c34
IPP90R800C3XKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6.9A; 104W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6.9A
Case: TO220-3
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhancement
Power dissipation: 104W
Gate charge: 42nC
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IPN50R800CEATMA1 IPN50R800CE.pdf
IPN50R800CEATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 5W; PG-SOT223
Mounting: SMD
Power dissipation: 5W
Gate charge: 12.4nC
Polarisation: unipolar
Technology: CoolMOS™ CE
Drain current: 4.8A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT223
On-state resistance: 0.8Ω
auf Bestellung 2727 Stücke:
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IPI90R800C3XKSA1 IPI90R800C3XKSA1-DTE.pdf
IPI90R800C3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhancement
Power dissipation: 104W
Technology: CoolMOS™
auf Bestellung 271 Stücke:
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IPD60R800CEAUMA1 IPD%2CIPA60R800CE.pdf
IPD60R800CEAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.4A; 74W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.4A
Power dissipation: 74W
Case: DPAK; TO252
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 17.2nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPW90R800C3FKSA1 IPW90R800C3_1.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30431b3e89eb011b8db526a81095
IPW90R800C3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD60R800CEAUMA1 IPD%2CIPA60R800CE.pdf
IPD60R800CEAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 8.4A; 74W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 8.4A
Power dissipation: 74W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 17.2nC
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
Mindestbestellmenge: 2500 Stücke
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IRFB5615PBF irfb5615pbf.pdf
IRFB5615PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 35A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
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BAT6405E6327HTSA1 BAT6402VH6327XTSA1.pdf
BAT6405E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
Max. forward voltage: 0.75V
auf Bestellung 11080 Stücke:
Lieferzeit 14-21 Tag (e)
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IPD26N06S2L35ATMA2 IPD26N06S2L35.pdf
IPD26N06S2L35ATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 22A; Idm: 120A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPB026N06NATMA1 IPB026N06N-DTE.pdf
IPB026N06NATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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CY8CMBR3116-LQXI Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e
CY8CMBR3116-LQXI
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN24
Case: QFN24
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Produkt ist nicht verfügbar
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SLB9670VQ20FW785XTMA1 Infineon-SLB%209670VQ2.0-DataSheet-v01_04-EN.pdf?fileId=5546d4626fc1ce0b016fc78270350cd6
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: SLB9670VQ20FW785XTMA1
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Mindestbestellmenge: 5000 Stücke
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PVA3354NSPBF IRSDS10619-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PVA
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 150mA
Manufacturer series: PVA
On-state resistance: 24Ω
Mounting: SMT
Case: SMD8
Body dimensions: 9.39x6.47x3.93mm
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Mindestbestellmenge: 50 Stücke
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S80KS2564GACHV040 Infineon-Data_Sheet_HYPERRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018050aef7544588
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...105°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Produkt ist nicht verfügbar
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S80KS2562GABHI020
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Produkt ist nicht verfügbar
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S80KS2562GABHB023 Infineon-S80KS2562_1.8_V_256-Mb_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd82db3d308ae
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...105°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Produkt ist nicht verfügbar
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S80KS2563GABHI020 download
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Produkt ist nicht verfügbar
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S80KS2564GACHI040 Infineon-Data_Sheet_HYPERRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018050aef7544588
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 260 Stücke
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S80KS2564GACHI043 Infineon-Data_Sheet_HYPERRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018050aef7544588
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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S80KS2564GACHV043 Infineon-Data_Sheet_HYPERRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018050aef7544588
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...105°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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ITS4880R ITS4880R.pdf
ITS4880R
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.625A; Ch: 8; N-Channel; SMD; BSSOP36
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.625A
Number of channels: 8
Kind of output: N-Channel
Mounting: SMD
Case: BSSOP36
Supply voltage: 11...45V DC
Technology: Industrial PROFET
On-state resistance: 0.15Ω
Produkt ist nicht verfügbar
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BSC059N04LSGATMA1 BSC059N04LSG-DTE.pdf
BSC059N04LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 62A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BSC016N06NSATMA1 BSC016N06NS-DTE.pdf
BSC016N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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BTS3405G BTS3405G.pdf
BTS3405G
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.35A; Ch: 2; N-Channel; SMD; HITFET®
Mounting: SMD
Output current: 0.35A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: HITFET®
Output voltage: 10V
Case: PG-DSO-8-25
Kind of integrated circuit: low-side
Number of channels: 2
On-state resistance: 0.35Ω
auf Bestellung 2050 Stücke:
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CY8C4013SXI-400 Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: CY8C4013SXI-400
auf Bestellung 2716 Stücke:
Lieferzeit 14-21 Tag (e)
Mindestbestellmenge: 97 Stücke
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BGS12SN6E6327XTSA1 Infineon-BGS12SN6-DS-v01_02-en.pdf?fileId=db3a30433f1b26e8013f2db58bc03856
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Output configuration: SPDT
Number of channels: 2
Case: TSNP6
Supply voltage: 1.8...3.5V DC
Mounting: SMD
Bandwidth: 0.1...6GHz
Application: telecommunication
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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IRFR4615TRLPBF irfr4615pbf.pdf
IRFR4615TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DD750S65K3NOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode
Type of semiconductor module: diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
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BSO110N03MSGXUMA1 BSO110N03MSG-DTE.pdf
BSO110N03MSGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.1A; 1.56W; PG-DSO-8
Power dissipation: 1.56W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 12.1A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-DSO-8
On-state resistance: 11mΩ
Mounting: SMD
auf Bestellung 2483 Stücke:
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CY7C53150-20AXI Infineon-CY7C53150_CY7C53120_Neuron_Chip_Network_Processor-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca599a4309&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Ethernet interfaces -integrated circuits
Description: CY7C53150-20AXI
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
Mindestbestellmenge: 70 Stücke
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TZ240N36KOF TZ240N36KOF.pdf
TZ240N36KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 3.6kV; 240A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 3.6kV
Load current: 240A
Case: BG-PB501-1
Max. forward voltage: 3.43V
Max. forward impulse current: 6.1kA
Gate current: 300mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BCR148SH6327 BCR148.pdf
BCR148SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 47kΩ
Mounting: SMD
Base resistor: 47kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Base-emitter resistor: 47kΩ
Case: SOT363
Frequency: 100MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
auf Bestellung 1545 Stücke:
Lieferzeit 14-21 Tag (e)
Mindestbestellmenge: 5 Stücke
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BSP317PH6327XTSA1 BSP317PH6327XTSA1-dte.pdf
BSP317PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -0.43A
Kind of channel: enhancement
Drain-source voltage: -250V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT223
On-state resistance: 4Ω
auf Bestellung 1520 Stücke:
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TT142N14KOF TT142N14KOF.pdf
TT142N14KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 142A; BG-PB34-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 142A
Case: BG-PB34-1
Max. forward voltage: 1.56V
Max. forward impulse current: 4.8kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BTS50080-1TMB BTS50080-1TMB.pdf
BTS50080-1TMB
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT
Type of integrated circuit: power switch
Case: PG-TO220-7-12
Mounting: THT
Supply voltage: 5.5...38V DC
Output current: 9.5A
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 7mΩ
auf Bestellung 494 Stücke:
Lieferzeit 14-21 Tag (e)
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BSS315PH6327XTSA1 BSS315PH6327XTSA1-dte.pdf
BSS315PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3029 Stücke:
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BSS126IXTSA1 Infineon-BSS126I-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a017376e5a5f370d1
BSS126IXTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21mA; 500mW; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
On-state resistance: 280Ω
Mounting: SMD
Gate charge: 1.4nC
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IPB012N04NF2SATMA1 Infineon-IPB012N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12ad796af4
IPB012N04NF2SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 40V; 197A; 250W; D2PAK,TO263
Case: D2PAK; TO263
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate charge: 159nC
On-state resistance: 1.25mΩ
Drain-source voltage: 40V
Drain current: 197A
Power dissipation: 250W
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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TLD21413EPXUMA1 TLD21413EP.pdf
TLD21413EPXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 80mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 80mA
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Produkt ist nicht verfügbar
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TLE42764GVATMA1 TLE42764.pdf
TLE42764GVATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2.5...20V
Output current: 0.4A
Case: PG-TO263-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.5...41V
auf Bestellung 695 Stücke:
Lieferzeit 14-21 Tag (e)
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