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NCP6922CDMTTXG onsemi Description: IC PMIC MINI 2 DCDC 2LDO 20QFN
Packaging: Bulk
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MC7809CD2TG MC7809CD2TG onsemi mc7800-d.pdf description Description: IC REG LINEAR 9V 1A D2PAK-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: D2PAK-3
Voltage - Output (Min/Fixed): 9V
PSRR: 61dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
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SBCW30LT1G SBCW30LT1G onsemi bcw30lt1-d.pdf Description: TRANS PNP 32V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 2mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 300 mW
Qualification: AEC-Q101
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SBCW30LT1G SBCW30LT1G onsemi bcw30lt1-d.pdf Description: TRANS PNP 32V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 2mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 300 mW
Qualification: AEC-Q101
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SBCW30LT1G SBCW30LT1G onsemi bcw30lt1-d.pdf Description: TRANS PNP 32V 0.1A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 2mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 300 mW
Qualification: AEC-Q101
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NOIP3SE1300A-QTI NOIP3SE1300A-QTI onsemi noip1sn1300a-d.pdf Description: IC IMAGE SENSOR CMOS 48LCC
Packaging: Tray
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 1280H x 1024V
Frames per Second: 50.0
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NOIP2SE1300A-QTI NOIP2SE1300A-QTI onsemi noip1sn1300a-d.pdf Description: IC IMAGE SENSOR 1.3MP 48LCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 1280H x 1024V
Supplier Device Package: 48-LCC (14.22x14.22)
Frames per Second: 43.0
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NOIV1SE1300A-QDC NOIV1SE1300A-QDC onsemi noiv1sn1300a-d.pdf Description: IC IMAGE SENSOR 1.3MP 48LLC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V, 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 1280H x 1024V
Supplier Device Package: 48-LCC (14.22x14.22)
Frames per Second: 150.0
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NSVMMBT5088LT3G NSVMMBT5088LT3G onsemi mmbt5088lt1-d.pdf Description: TRANS NPN 30V 0.05A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 225 mW
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NSVMMBT5088LT3G NSVMMBT5088LT3G onsemi mmbt5088lt1-d.pdf Description: TRANS NPN 30V 0.05A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 225 mW
Produkt ist nicht verfügbar
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LA6585FA-BH LA6585FA-BH onsemi Description: IC HALF BRIDGE DRVR 500MA 8MSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -30°C ~ 90°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.2V ~ 14V
Applications: DC Motors, General Purpose
Current - Output / Channel: 500mA
Technology: Bipolar
Voltage - Load: 2.2V ~ 14V
Supplier Device Package: 8-MSOP
Fault Protection: Over Temperature
Load Type: Inductive
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FFSP2065A FFSP2065A onsemi ffsp2065a-d.pdf Description: DIODE SIL CARB 650V 25A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1085pF @ 1V, 100kHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
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100+6.82 EUR
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FFSP2065B FFSP2065B onsemi ffsp2065b-d.pdf Description: DIODE SIL CARB 650V 22.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Current - Average Rectified (Io): 22.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
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FFSP2065B-F085 FFSP2065B-F085 onsemi ffsp2065b-f085-d.pdf Description: DIODE SIL CARB 650V 20A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
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NL3S325FCT2G onsemi NL3S325.pdf Description: IC AUDIO PROCESSOR 9WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Function: Audio Processor
Interface: Analog
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Applications: Audio Systems
Supplier Device Package: 9-WLCSP (1.9x1.9)
Number of Channels: 2
Produkt ist nicht verfügbar
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NL3S325FCT2G onsemi NL3S325.pdf Description: IC AUDIO PROCESSOR 9WLCSP
Packaging: Bulk
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Function: Audio Processor
Interface: Analog
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Applications: Audio Systems
Supplier Device Package: 9-WLCSP (1.9x1.9)
Number of Channels: 2
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MC74HCT241ADWR2G MC74HCT241ADWR2G onsemi mc74hct241a-d.pdf Description: IC BUFF 4.5V/5.5V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SOIC
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MC74HCT241ADWR2G MC74HCT241ADWR2G onsemi mc74hct241a-d.pdf Description: IC BUFF 4.5V/5.5V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SOIC
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15+1.46 EUR
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100+0.83 EUR
250+0.77 EUR
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FQA19N60 FQA19N60 onsemi fqa19n60-d.pdf Description: MOSFET N-CH 600V 18.5A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 9.3A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
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LV88562JA-AH onsemi LV88561-64_Rev2_Dec2018.pdf Description: NON-AUTO BLDC MOTOR DRIVE
Packaging: Tape & Reel (TR)
Package / Case: 20-LFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 50mA
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Pre-Driver - Half Bridge
Voltage - Supply: 3.9V ~ 16V
Applications: General Purpose
Supplier Device Package: 20-SSOPJ
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
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LV88564RTXG onsemi LV88561-64_Rev2_Dec2018.pdf Description: NON-AUTO BLDC MOTOR DRIVE
Packaging: Bulk
Package / Case: 20-VFQFN
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 50mA
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Pre-Driver - Half Bridge
Voltage - Supply: 3.9V ~ 16V
Applications: General Purpose
Supplier Device Package: 20-VCT (3x3)
Motor Type - AC, DC: Brushless DC (BLDC)
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MICROFJ-30035-TSV-TR MICROFJ-30035-TSV-TR onsemi microj-series-d.pdf Description: SENSOR PHOTODIODE 420NM 8WBGA
Packaging: Tape & Reel (TR)
Package / Case: 8-WBGA
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 110ps
Spectral Range: 200nm ~ 900nm
Active Area: 9.43mm²
Current - Dark (Typ): 1.9µA
Voltage - DC Reverse (Vr) (Max): 24.7 V
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MICROFJ-30035-TSV-TR MICROFJ-30035-TSV-TR onsemi microj-series-d.pdf Description: SENSOR PHOTODIODE 420NM 8WBGA
Packaging: Cut Tape (CT)
Package / Case: 8-WBGA
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 110ps
Spectral Range: 200nm ~ 900nm
Active Area: 9.43mm²
Current - Dark (Typ): 1.9µA
Voltage - DC Reverse (Vr) (Max): 24.7 V
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5+35.69 EUR
10+34.43 EUR
25+32.92 EUR
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MICROFC-30035-SMT-TR1 MICROFC-30035-SMT-TR1 onsemi microc-series-d.pdf Description: SENSOR PHOTODIODE 420NM 4SMD
Packaging: Strip
Package / Case: 4-SMD, No Lead
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 600ps
Spectral Range: 300nm ~ 950nm
Color - Enhanced: Blue
Active Area: 9mm²
Current - Dark (Typ): 154nA
Voltage - DC Reverse (Vr) (Max): 24.7 V
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1+108 EUR
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NB3U1548CDTR2G NB3U1548CDTR2G onsemi nb3u1548c-d.pdf Description: IC CLK BUFFER 1:4 160MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS
Type: Fanout Buffer (Distribution)
Input: LVCMOS
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.4V ~ 3.465V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
Frequency - Max: 160 MHz
Produkt ist nicht verfügbar
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NB3U1548CDTR2G NB3U1548CDTR2G onsemi nb3u1548c-d.pdf Description: IC CLK BUFFER 1:4 160MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS
Type: Fanout Buffer (Distribution)
Input: LVCMOS
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.4V ~ 3.465V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
Frequency - Max: 160 MHz
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NLV74HCT14ADTR2G NLV74HCT14ADTR2G onsemi Description: IC INV 6-CIR 1-IN 14-TSSOP
Features: Schmitt Trigger
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 32ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
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9+66.46 EUR
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ESD8111FCT5G ESD8111FCT5G onsemi esd8101-d.pdf Description: LOW CAP SCR IN 0201 DSN
Packaging: Tape & Reel (TR)
Package / Case: 2-XFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.1A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-WLCSP (0.6x0.3)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8V
Power Line Protection: No
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ESD8111FCT5G ESD8111FCT5G onsemi esd8101-d.pdf Description: LOW CAP SCR IN 0201 DSN
Packaging: Cut Tape (CT)
Package / Case: 2-XFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.1A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-WLCSP (0.6x0.3)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8V
Power Line Protection: No
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39+0.54 EUR
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500+0.24 EUR
1000+0.19 EUR
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ESD8118MUTAG onsemi ESD8118-D.PDF Description: TVS DIODE 3.3VWM 11.4VC 10UDFN
Packaging: Bulk
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (3.2x1.2)
Unidirectional Channels: 8
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11.4V (Typ)
Power Line Protection: No
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ESD8501V5MUT5G ESD8501V5MUT5G onsemi esd8501v5-d.pdf Description: TVS DIODE 5VWM 11.5VC 2UDFN
Packaging: Tape & Reel (TR)
Package / Case: 2-UDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 16pF @ 0V, 1MHz (Max)
Current - Peak Pulse (10/1000µs): 70A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 2-UDFN (1.6x1)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11.5V
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD8501V5MUT5G ESD8501V5MUT5G onsemi esd8501v5-d.pdf Description: TVS DIODE 5VWM 11.5VC 2UDFN
Packaging: Bulk
Package / Case: 2-UDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 16pF @ 0V, 1MHz (Max)
Current - Peak Pulse (10/1000µs): 70A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 2-UDFN (1.6x1)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11.5V
Power Line Protection: No
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SZESD8104MUTAG SZESD8104MUTAG onsemi ESD8104_Rev8_Nov2017.PDF Description: TVS DIODE 3.3VWM 11.4VC 10UDFN
Packaging: Bulk
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11.4V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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ESD8116MUTAG onsemi ONSM-S-A0003579734-1.pdf?t.download=true&u=5oefqw Description: ESD8116 - ESD Protection Array,
Packaging: Bulk
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 8-UDFN (2x1.2)
Unidirectional Channels: 6
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11.4V (Typ)
Power Line Protection: No
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SZESD8351MUT5G SZESD8351MUT5G onsemi esd8351-d.pdf Description: TVS DIODE 3.3VWM 11.2VC 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Frequency: 0.25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SZESD8351MUT5G SZESD8351MUT5G onsemi esd8351-d.pdf Description: TVS DIODE 3.3VWM 11.2VC 2X3DFN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Frequency: 0.25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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ESD8551N2T5G ESD8551N2T5G onsemi esd8551-d.pdf Description: TVS DIODE 3.3VWM 16VC 2X2DFN
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 16V (Typ)
Power Line Protection: No
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ESD8551N2T5G ESD8551N2T5G onsemi esd8551-d.pdf Description: TVS DIODE 3.3VWM 16VC 2X2DFN
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 16V (Typ)
Power Line Protection: No
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SZESD8551N2T5G SZESD8551N2T5G onsemi ESD8551-D.PDF Description: TVS DIODE 3.3VWM 16VC 2X2DFN
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB 3.0
Capacitance @ Frequency: 0.3pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 16V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SZESD8551N2T5G SZESD8551N2T5G onsemi ESD8551-D.PDF Description: TVS DIODE 3.3VWM 16VC 2X2DFN
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB 3.0
Capacitance @ Frequency: 0.3pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 16V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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23+0.94 EUR
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500+0.77 EUR
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MMSZ5254BT1 MMSZ5254BT1 onsemi SZ%2CMMSZ52zzzT1G_Series.pdf Description: DIODE ZENER 27V 500MW SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Produkt ist nicht verfügbar
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CM6320 CM6320 onsemi CM6320.pdf Description: FILTER RC(PI) 70 OHMS ESD SMD
Packaging: Bulk
Package / Case: 24-UFBGA, WLCSP
Size / Dimension: 0.077" L x 0.077" W (1.96mm x 1.96mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 70Ohms, C = 30pF
Height: 0.025" (0.64mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 70
ESD Protection: Yes
Number of Channels: 10
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MC79L24ACPRPG MC79L24ACPRPG onsemi mc79l00-d.pdf Description: IC REG LINEAR -24V 100MA TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -40V
Number of Regulators: 1
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): -24V
PSRR: 47dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Temperature, Short Circuit
auf Bestellung 1967 Stücke:
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MC79L24ACPRPG MC79L24ACPRPG onsemi mc79l00-d.pdf Description: IC REG LINEAR -24V 100MA TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -40V
Number of Regulators: 1
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): -24V
PSRR: 47dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Temperature, Short Circuit
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FSL518HPG FSL518HPG onsemi fsl538hr-d.pdf Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 130kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Flyback
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: EN, Soft Start
Power (Watts): 15 W
auf Bestellung 2958 Stücke:
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100+1.75 EUR
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1000+1.26 EUR
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NVMJD010N10MCLTWG NVMJD010N10MCLTWG onsemi nvmjd010n10mcl-d.pdf Description: MOSFET 2N-CH 100V 11.8A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 84W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 62A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1795pF @ 50V
Rds On (Max) @ Id, Vgs: 10mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 97µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMJD010N10MCLTWG NVMJD010N10MCLTWG onsemi nvmjd010n10mcl-d.pdf Description: MOSFET 2N-CH 100V 11.8A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 84W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 62A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1795pF @ 50V
Rds On (Max) @ Id, Vgs: 10mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 97µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
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FDB9503L-F085 FDB9503L-F085 onsemi fdb9503l_f085-d.pdf Description: MOSFET P-CH 40V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
Qualification: AEC-Q101
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FDB9503L-F085 FDB9503L-F085 onsemi fdb9503l_f085-d.pdf Description: MOSFET P-CH 40V 110A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
Qualification: AEC-Q101
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FDB9409-F085 FDB9409-F085 onsemi fdb9409_f085-d.pdf Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V
Qualification: AEC-Q101
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FDB9409-F085 FDB9409-F085 onsemi fdb9409_f085-d.pdf Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V
Qualification: AEC-Q101
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LM393N LM393N onsemi lm393-d.pdf Description: IC COMPARATOR 2CH 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-DIP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 18mA @ 5V
Produkt ist nicht verfügbar
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MPSA93 MPSA93 onsemi MPSA%2CMPSL%2CFTSOL%2CPE%20Type.pdf Description: TRANS PNP 200V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 625 mW
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MPSA93 MPSA93 onsemi MPSA%2CMPSL%2CFTSOL%2CPE%20Type.pdf Description: TRANS PNP 200V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 625 mW
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NP1100SBT3G NP1100SBT3G onsemi NPSERIES-D.pdf Description: THYRISTOR 90V 80A DO214AA
Packaging: Bulk
Capacitance: 95pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 130V
Voltage - Off State: 90V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
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1268+0.45 EUR
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2SJ615-TD-E onsemi Description: PCH 4V DRIVE SERIES
Packaging: Bulk
auf Bestellung 73000 Stücke:
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EFC4K105NUZTDG EFC4K105NUZTDG onsemi efc4k105nuz-d.pdf Description: MOSFET 2N-CH 22V 25A 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 22V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 3.8V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (3.4x1.96)
Produkt ist nicht verfügbar
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EFC4K105NUZTDG EFC4K105NUZTDG onsemi efc4k105nuz-d.pdf Description: MOSFET 2N-CH 22V 25A 10WLCSP
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 22V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 3.8V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (3.4x1.96)
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EFC2K102NUZTDG EFC2K102NUZTDG onsemi Description: MOSFET 2N-CH 12V 33A 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 3.8V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (2.98x1.49)
Produkt ist nicht verfügbar
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EFC2K102NUZTDG EFC2K102NUZTDG onsemi Description: MOSFET 2N-CH 12V 33A 10WLCSP
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 3.8V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (2.98x1.49)
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NCP6922CDMTTXG
Hersteller: onsemi
Description: IC PMIC MINI 2 DCDC 2LDO 20QFN
Packaging: Bulk
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MC7809CD2TG description mc7800-d.pdf
MC7809CD2TG
Hersteller: onsemi
Description: IC REG LINEAR 9V 1A D2PAK-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: D2PAK-3
Voltage - Output (Min/Fixed): 9V
PSRR: 61dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
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SBCW30LT1G bcw30lt1-d.pdf
SBCW30LT1G
Hersteller: onsemi
Description: TRANS PNP 32V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 2mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 300 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SBCW30LT1G bcw30lt1-d.pdf
SBCW30LT1G
Hersteller: onsemi
Description: TRANS PNP 32V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 2mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 300 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SBCW30LT1G bcw30lt1-d.pdf
SBCW30LT1G
Hersteller: onsemi
Description: TRANS PNP 32V 0.1A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 2mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 300 mW
Qualification: AEC-Q101
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NOIP3SE1300A-QTI noip1sn1300a-d.pdf
NOIP3SE1300A-QTI
Hersteller: onsemi
Description: IC IMAGE SENSOR CMOS 48LCC
Packaging: Tray
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 1280H x 1024V
Frames per Second: 50.0
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NOIP2SE1300A-QTI noip1sn1300a-d.pdf
NOIP2SE1300A-QTI
Hersteller: onsemi
Description: IC IMAGE SENSOR 1.3MP 48LCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 1280H x 1024V
Supplier Device Package: 48-LCC (14.22x14.22)
Frames per Second: 43.0
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NOIV1SE1300A-QDC noiv1sn1300a-d.pdf
NOIV1SE1300A-QDC
Hersteller: onsemi
Description: IC IMAGE SENSOR 1.3MP 48LLC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V, 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 1280H x 1024V
Supplier Device Package: 48-LCC (14.22x14.22)
Frames per Second: 150.0
Produkt ist nicht verfügbar
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NSVMMBT5088LT3G mmbt5088lt1-d.pdf
NSVMMBT5088LT3G
Hersteller: onsemi
Description: TRANS NPN 30V 0.05A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 225 mW
Produkt ist nicht verfügbar
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NSVMMBT5088LT3G mmbt5088lt1-d.pdf
NSVMMBT5088LT3G
Hersteller: onsemi
Description: TRANS NPN 30V 0.05A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 225 mW
Produkt ist nicht verfügbar
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LA6585FA-BH
LA6585FA-BH
Hersteller: onsemi
Description: IC HALF BRIDGE DRVR 500MA 8MSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -30°C ~ 90°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.2V ~ 14V
Applications: DC Motors, General Purpose
Current - Output / Channel: 500mA
Technology: Bipolar
Voltage - Load: 2.2V ~ 14V
Supplier Device Package: 8-MSOP
Fault Protection: Over Temperature
Load Type: Inductive
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587+1.02 EUR
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FFSP2065A ffsp2065a-d.pdf
FFSP2065A
Hersteller: onsemi
Description: DIODE SIL CARB 650V 25A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1085pF @ 1V, 100kHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
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FFSP2065B ffsp2065b-d.pdf
FFSP2065B
Hersteller: onsemi
Description: DIODE SIL CARB 650V 22.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Current - Average Rectified (Io): 22.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
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FFSP2065B-F085 ffsp2065b-f085-d.pdf
FFSP2065B-F085
Hersteller: onsemi
Description: DIODE SIL CARB 650V 20A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
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2+15.48 EUR
10+10.51 EUR
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NL3S325FCT2G NL3S325.pdf
Hersteller: onsemi
Description: IC AUDIO PROCESSOR 9WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Function: Audio Processor
Interface: Analog
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Applications: Audio Systems
Supplier Device Package: 9-WLCSP (1.9x1.9)
Number of Channels: 2
Produkt ist nicht verfügbar
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NL3S325FCT2G NL3S325.pdf
Hersteller: onsemi
Description: IC AUDIO PROCESSOR 9WLCSP
Packaging: Bulk
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Function: Audio Processor
Interface: Analog
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Applications: Audio Systems
Supplier Device Package: 9-WLCSP (1.9x1.9)
Number of Channels: 2
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MC74HCT241ADWR2G mc74hct241a-d.pdf
MC74HCT241ADWR2G
Hersteller: onsemi
Description: IC BUFF 4.5V/5.5V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SOIC
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MC74HCT241ADWR2G mc74hct241a-d.pdf
MC74HCT241ADWR2G
Hersteller: onsemi
Description: IC BUFF 4.5V/5.5V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SOIC
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15+1.46 EUR
20+1.05 EUR
25+0.94 EUR
100+0.83 EUR
250+0.77 EUR
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FQA19N60 fqa19n60-d.pdf
FQA19N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 18.5A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 9.3A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Produkt ist nicht verfügbar
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LV88562JA-AH LV88561-64_Rev2_Dec2018.pdf
Hersteller: onsemi
Description: NON-AUTO BLDC MOTOR DRIVE
Packaging: Tape & Reel (TR)
Package / Case: 20-LFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 50mA
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Pre-Driver - Half Bridge
Voltage - Supply: 3.9V ~ 16V
Applications: General Purpose
Supplier Device Package: 20-SSOPJ
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
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LV88564RTXG LV88561-64_Rev2_Dec2018.pdf
Hersteller: onsemi
Description: NON-AUTO BLDC MOTOR DRIVE
Packaging: Bulk
Package / Case: 20-VFQFN
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 50mA
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Pre-Driver - Half Bridge
Voltage - Supply: 3.9V ~ 16V
Applications: General Purpose
Supplier Device Package: 20-VCT (3x3)
Motor Type - AC, DC: Brushless DC (BLDC)
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263+2.27 EUR
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MICROFJ-30035-TSV-TR microj-series-d.pdf
MICROFJ-30035-TSV-TR
Hersteller: onsemi
Description: SENSOR PHOTODIODE 420NM 8WBGA
Packaging: Tape & Reel (TR)
Package / Case: 8-WBGA
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 110ps
Spectral Range: 200nm ~ 900nm
Active Area: 9.43mm²
Current - Dark (Typ): 1.9µA
Voltage - DC Reverse (Vr) (Max): 24.7 V
Produkt ist nicht verfügbar
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MICROFJ-30035-TSV-TR microj-series-d.pdf
MICROFJ-30035-TSV-TR
Hersteller: onsemi
Description: SENSOR PHOTODIODE 420NM 8WBGA
Packaging: Cut Tape (CT)
Package / Case: 8-WBGA
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 110ps
Spectral Range: 200nm ~ 900nm
Active Area: 9.43mm²
Current - Dark (Typ): 1.9µA
Voltage - DC Reverse (Vr) (Max): 24.7 V
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1+39.08 EUR
5+35.69 EUR
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MICROFC-30035-SMT-TR1 microc-series-d.pdf
MICROFC-30035-SMT-TR1
Hersteller: onsemi
Description: SENSOR PHOTODIODE 420NM 4SMD
Packaging: Strip
Package / Case: 4-SMD, No Lead
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 600ps
Spectral Range: 300nm ~ 950nm
Color - Enhanced: Blue
Active Area: 9mm²
Current - Dark (Typ): 154nA
Voltage - DC Reverse (Vr) (Max): 24.7 V
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1+108 EUR
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NB3U1548CDTR2G nb3u1548c-d.pdf
NB3U1548CDTR2G
Hersteller: onsemi
Description: IC CLK BUFFER 1:4 160MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS
Type: Fanout Buffer (Distribution)
Input: LVCMOS
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.4V ~ 3.465V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
Frequency - Max: 160 MHz
Produkt ist nicht verfügbar
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NB3U1548CDTR2G nb3u1548c-d.pdf
NB3U1548CDTR2G
Hersteller: onsemi
Description: IC CLK BUFFER 1:4 160MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS
Type: Fanout Buffer (Distribution)
Input: LVCMOS
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.4V ~ 3.465V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
Frequency - Max: 160 MHz
auf Bestellung 935 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.28 EUR
10+7.88 EUR
25+7.28 EUR
100+6.62 EUR
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NLV74HCT14ADTR2G
NLV74HCT14ADTR2G
Hersteller: onsemi
Description: IC INV 6-CIR 1-IN 14-TSSOP
Features: Schmitt Trigger
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 32ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
auf Bestellung 45714 Stücke:
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9+66.46 EUR
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ESD8111FCT5G esd8101-d.pdf
ESD8111FCT5G
Hersteller: onsemi
Description: LOW CAP SCR IN 0201 DSN
Packaging: Tape & Reel (TR)
Package / Case: 2-XFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.1A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-WLCSP (0.6x0.3)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8V
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD8111FCT5G esd8101-d.pdf
ESD8111FCT5G
Hersteller: onsemi
Description: LOW CAP SCR IN 0201 DSN
Packaging: Cut Tape (CT)
Package / Case: 2-XFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.1A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-WLCSP (0.6x0.3)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8V
Power Line Protection: No
auf Bestellung 8880 Stücke:
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28+0.75 EUR
39+0.54 EUR
100+0.27 EUR
500+0.24 EUR
1000+0.19 EUR
2000+0.17 EUR
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ESD8118MUTAG ESD8118-D.PDF
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 11.4VC 10UDFN
Packaging: Bulk
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (3.2x1.2)
Unidirectional Channels: 8
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11.4V (Typ)
Power Line Protection: No
auf Bestellung 1438161 Stücke:
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2424+0.24 EUR
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ESD8501V5MUT5G esd8501v5-d.pdf
ESD8501V5MUT5G
Hersteller: onsemi
Description: TVS DIODE 5VWM 11.5VC 2UDFN
Packaging: Tape & Reel (TR)
Package / Case: 2-UDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 16pF @ 0V, 1MHz (Max)
Current - Peak Pulse (10/1000µs): 70A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 2-UDFN (1.6x1)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11.5V
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD8501V5MUT5G esd8501v5-d.pdf
ESD8501V5MUT5G
Hersteller: onsemi
Description: TVS DIODE 5VWM 11.5VC 2UDFN
Packaging: Bulk
Package / Case: 2-UDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 16pF @ 0V, 1MHz (Max)
Current - Peak Pulse (10/1000µs): 70A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 2-UDFN (1.6x1)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11.5V
Power Line Protection: No
auf Bestellung 6340438 Stücke:
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AnzahlPrivatkunde
2049+0.3 EUR
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SZESD8104MUTAG ESD8104_Rev8_Nov2017.PDF
SZESD8104MUTAG
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 11.4VC 10UDFN
Packaging: Bulk
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11.4V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ESD8116MUTAG ONSM-S-A0003579734-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: ESD8116 - ESD Protection Array,
Packaging: Bulk
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 8-UDFN (2x1.2)
Unidirectional Channels: 6
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11.4V (Typ)
Power Line Protection: No
auf Bestellung 1907549 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3549+0.15 EUR
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SZESD8351MUT5G esd8351-d.pdf
SZESD8351MUT5G
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 11.2VC 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Frequency: 0.25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.17 EUR
30000+0.15 EUR
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SZESD8351MUT5G esd8351-d.pdf
SZESD8351MUT5G
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 11.2VC 2X3DFN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Frequency: 0.25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
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31+0.69 EUR
39+0.54 EUR
100+0.32 EUR
500+0.3 EUR
1000+0.2 EUR
2000+0.19 EUR
5000+0.18 EUR
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ESD8551N2T5G esd8551-d.pdf
ESD8551N2T5G
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 16VC 2X2DFN
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 16V (Typ)
Power Line Protection: No
auf Bestellung 160000 Stücke:
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AnzahlPrivatkunde
8000+0.13 EUR
16000+0.12 EUR
24000+0.12 EUR
40000+0.11 EUR
56000+0.11 EUR
80000+0.1 EUR
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ESD8551N2T5G esd8551-d.pdf
ESD8551N2T5G
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 16VC 2X2DFN
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 16V (Typ)
Power Line Protection: No
auf Bestellung 164230 Stücke:
Lieferzeit 10-14 Tag (e)
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30+0.71 EUR
47+0.44 EUR
100+0.29 EUR
500+0.2 EUR
1000+0.19 EUR
2000+0.17 EUR
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SZESD8551N2T5G ESD8551-D.PDF
SZESD8551N2T5G
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 16VC 2X2DFN
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB 3.0
Capacitance @ Frequency: 0.3pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 16V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8000+0.13 EUR
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SZESD8551N2T5G ESD8551-D.PDF
SZESD8551N2T5G
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 16VC 2X2DFN
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB 3.0
Capacitance @ Frequency: 0.3pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 16V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
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23+0.94 EUR
24+0.9 EUR
100+0.88 EUR
500+0.77 EUR
1000+0.2 EUR
2000+0.18 EUR
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MMSZ5254BT1 SZ%2CMMSZ52zzzT1G_Series.pdf
MMSZ5254BT1
Hersteller: onsemi
Description: DIODE ZENER 27V 500MW SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Produkt ist nicht verfügbar
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CM6320 CM6320.pdf
CM6320
Hersteller: onsemi
Description: FILTER RC(PI) 70 OHMS ESD SMD
Packaging: Bulk
Package / Case: 24-UFBGA, WLCSP
Size / Dimension: 0.077" L x 0.077" W (1.96mm x 1.96mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 70Ohms, C = 30pF
Height: 0.025" (0.64mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 70
ESD Protection: Yes
Number of Channels: 10
auf Bestellung 5000 Stücke:
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865+0.63 EUR
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MC79L24ACPRPG mc79l00-d.pdf
MC79L24ACPRPG
Hersteller: onsemi
Description: IC REG LINEAR -24V 100MA TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -40V
Number of Regulators: 1
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): -24V
PSRR: 47dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Temperature, Short Circuit
auf Bestellung 1967 Stücke:
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32+0.67 EUR
46+0.46 EUR
51+0.42 EUR
100+0.36 EUR
250+0.33 EUR
500+0.31 EUR
1000+0.3 EUR
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MC79L24ACPRPG mc79l00-d.pdf
MC79L24ACPRPG
Hersteller: onsemi
Description: IC REG LINEAR -24V 100MA TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -40V
Number of Regulators: 1
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): -24V
PSRR: 47dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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FSL518HPG fsl538hr-d.pdf
FSL518HPG
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 130kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Flyback
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: EN, Soft Start
Power (Watts): 15 W
auf Bestellung 2958 Stücke:
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AnzahlPrivatkunde
6+4.16 EUR
10+2.62 EUR
50+1.95 EUR
100+1.75 EUR
250+1.52 EUR
500+1.38 EUR
1000+1.26 EUR
2500+1.14 EUR
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NVMJD010N10MCLTWG nvmjd010n10mcl-d.pdf
NVMJD010N10MCLTWG
Hersteller: onsemi
Description: MOSFET 2N-CH 100V 11.8A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 84W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 62A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1795pF @ 50V
Rds On (Max) @ Id, Vgs: 10mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 97µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMJD010N10MCLTWG nvmjd010n10mcl-d.pdf
NVMJD010N10MCLTWG
Hersteller: onsemi
Description: MOSFET 2N-CH 100V 11.8A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 84W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 62A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1795pF @ 50V
Rds On (Max) @ Id, Vgs: 10mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 97µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDB9503L-F085 fdb9503l_f085-d.pdf
FDB9503L-F085
Hersteller: onsemi
Description: MOSFET P-CH 40V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDB9503L-F085 fdb9503l_f085-d.pdf
FDB9503L-F085
Hersteller: onsemi
Description: MOSFET P-CH 40V 110A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 654 Stücke:
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AnzahlPrivatkunde
3+9.89 EUR
10+6.91 EUR
100+5.15 EUR
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FDB9409-F085 fdb9409_f085-d.pdf
FDB9409-F085
Hersteller: onsemi
Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDB9409-F085 fdb9409_f085-d.pdf
FDB9409-F085
Hersteller: onsemi
Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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LM393N lm393-d.pdf
LM393N
Hersteller: onsemi
Description: IC COMPARATOR 2CH 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-DIP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 18mA @ 5V
Produkt ist nicht verfügbar
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MPSA93 MPSA%2CMPSL%2CFTSOL%2CPE%20Type.pdf
MPSA93
Hersteller: onsemi
Description: TRANS PNP 200V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 625 mW
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MPSA93 MPSA%2CMPSL%2CFTSOL%2CPE%20Type.pdf
MPSA93
Hersteller: onsemi
Description: TRANS PNP 200V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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NP1100SBT3G NPSERIES-D.pdf
NP1100SBT3G
Hersteller: onsemi
Description: THYRISTOR 90V 80A DO214AA
Packaging: Bulk
Capacitance: 95pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 130V
Voltage - Off State: 90V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
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1268+0.45 EUR
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2SJ615-TD-E
Hersteller: onsemi
Description: PCH 4V DRIVE SERIES
Packaging: Bulk
auf Bestellung 73000 Stücke:
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1402+0.4 EUR
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EFC4K105NUZTDG efc4k105nuz-d.pdf
EFC4K105NUZTDG
Hersteller: onsemi
Description: MOSFET 2N-CH 22V 25A 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 22V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 3.8V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (3.4x1.96)
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EFC4K105NUZTDG efc4k105nuz-d.pdf
EFC4K105NUZTDG
Hersteller: onsemi
Description: MOSFET 2N-CH 22V 25A 10WLCSP
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 22V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 3.8V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (3.4x1.96)
auf Bestellung 4950 Stücke:
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13+1.63 EUR
16+1.33 EUR
100+1.04 EUR
500+0.88 EUR
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2000+0.68 EUR
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EFC2K102NUZTDG
EFC2K102NUZTDG
Hersteller: onsemi
Description: MOSFET 2N-CH 12V 33A 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 3.8V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (2.98x1.49)
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EFC2K102NUZTDG
EFC2K102NUZTDG
Hersteller: onsemi
Description: MOSFET 2N-CH 12V 33A 10WLCSP
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 3.8V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (2.98x1.49)
auf Bestellung 4895 Stücke:
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13+1.71 EUR
15+1.4 EUR
100+1.09 EUR
500+0.93 EUR
1000+0.75 EUR
2000+0.71 EUR
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