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FDS8884-G | onsemi |
Description: MOSFET N-CH 30V 8.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 8.5A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 15 V |
Produkt ist nicht verfügbar |
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SMF26AT1 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4.8A Voltage - Reverse Standoff (Typ): 26V Supplier Device Package: SOD-123FL Unidirectional Channels: 1 Voltage - Breakdown (Min): 28.9V Voltage - Clamping (Max) @ Ipp: 42.1V Power - Peak Pulse: 200W Power Line Protection: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MSD1819A-RT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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MSD1819A-RT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
auf Bestellung 11458 Stücke: Lieferzeit 10-14 Tag (e) |
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MSD1819A-RT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NSVMSD1819A-RT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V Supplier Device Package: SC-70-3 (SOT323) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NSVMSD601-RT1G | onsemi |
![]() Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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NSVMSD601-RT1G | onsemi |
![]() Packaging: Cut Tape (CT) |
auf Bestellung 123000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFD4951NFT1G | onsemi |
Description: MOSFET N-CH 30V 10.8A SO8FL Packaging: Bulk |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFD4951NFT3G | onsemi |
Description: MOSFET N-CH 30V 10.8A 8DFN DL Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
auf Bestellung 14900 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFD4C50NT1G | onsemi |
Description: MOSFET N-CH 30V 12A 8DFN DL Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
Produkt ist nicht verfügbar |
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NTMFD4C87NT1G | onsemi |
![]() Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) |
auf Bestellung 10500 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFD4C88NT1G | onsemi |
![]() Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.2A Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS016N06CTAG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 12700 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS016N06CTAG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V |
auf Bestellung 16380 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS016N06CT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc) Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V Power Dissipation (Max): 3.4W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 16500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS016N06CTAG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVMFWS016N06CT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc) Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V Power Dissipation (Max): 3.4W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NTMFS016N06CT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc) Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V Power Dissipation (Max): 3.4W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V |
auf Bestellung 17700 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFD016N06CT1G | onsemi |
Description: MOSFET 2N-CH 60V 9A/32A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 36W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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MM74HCT00N | onsemi |
![]() Packaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 4.8mA, 4.8mA Number of Inputs: 2 Supplier Device Package: 14-MDIP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 23ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 1 µA |
Produkt ist nicht verfügbar |
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MC74HC08ADTR2G-Q | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 1 µA |
Produkt ist nicht verfügbar |
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NLJ74HC08ADTR2G | onsemi |
Description: IC GATE AND 4CH 2-INP 14TSSOP Packaging: Bulk Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 19ns @ 6V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 1 µA |
auf Bestellung 43472 Stücke: Lieferzeit 10-14 Tag (e) |
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SLJ74HC08ADTR2G | onsemi |
Description: SLJ74HC08ADTR2G Packaging: Bulk |
Produkt ist nicht verfügbar |
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NCV7808ABD2TR4G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: D2PAK-3 Voltage - Output (Min/Fixed): 8V PSRR: 62dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Protection Features: Over Temperature, Short Circuit Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NCV7808ABD2TR4G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: D2PAK-3 Voltage - Output (Min/Fixed): 8V PSRR: 62dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Protection Features: Over Temperature, Short Circuit Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BCX71K | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NTMFS4934NT3G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 147A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V Power Dissipation (Max): 930mW (Ta), 69.44W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5505 pF @ 15 V |
Produkt ist nicht verfügbar |
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DTA114EM3T5G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SOT-723 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA114EM3T5G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SOT-723 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
auf Bestellung 47008 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP6132BDMNR2G | onsemi |
Description: IC CPU CTLR DUAL 3+2PHASE 60-QFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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MMBF4118 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: SOT-23-3 Power - Max: 225 mW Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 80 µA @ 10 V |
Produkt ist nicht verfügbar |
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FCPF290N80 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.7mA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V |
auf Bestellung 665 Stücke: Lieferzeit 10-14 Tag (e) |
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CAT24WC04LI | onsemi |
![]() Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-PDIP Write Cycle Time - Word, Page: 10ms Memory Interface: I2C Access Time: 1 µs Memory Organization: 512 x 8 DigiKey Programmable: Not Verified |
auf Bestellung 37987 Stücke: Lieferzeit 10-14 Tag (e) |
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CAT24WC128W | onsemi |
Description: IC EEPROM 128KBIT I2C 1MHZ 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.5V ~ 6V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 10ms Memory Interface: I²C Access Time: 550 ns Memory Organization: 16K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 6558 Stücke: Lieferzeit 10-14 Tag (e) |
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CAT24WC02L | onsemi |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 10ms Memory Interface: I²C Access Time: 1 µs Memory Organization: 256 x 8 DigiKey Programmable: Not Verified |
auf Bestellung 6263 Stücke: Lieferzeit 10-14 Tag (e) |
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CAT24WC128WI | onsemi |
Description: IC EEPROM 128KBIT I2C 1MHZ 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.5V ~ 6V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 10ms Memory Interface: I²C Access Time: 550 ns Memory Organization: 16K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 3263 Stücke: Lieferzeit 10-14 Tag (e) |
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CAT24C03VP2GI-T3 | onsemi |
![]() Packaging: Bulk Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 256 x 8 DigiKey Programmable: Not Verified |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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CAT24C03LGI | onsemi |
![]() Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-PDIP Write Cycle Time - Word, Page: 5ms Memory Interface: I²C Access Time: 900 ns Memory Organization: 256 x 8 DigiKey Programmable: Not Verified |
auf Bestellung 8879 Stücke: Lieferzeit 10-14 Tag (e) |
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MC34060ADR2G | onsemi |
![]() Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
LV5805M-TE-L-E | onsemi |
Description: STEP-DOWN SWITCHING REGULATOR Packaging: Bulk |
auf Bestellung 101000 Stücke: Lieferzeit 10-14 Tag (e) |
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LV5809NMX-TLM-H | onsemi |
![]() Packaging: Bulk |
auf Bestellung 305000 Stücke: Lieferzeit 10-14 Tag (e) |
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LV5803NM-TE-L-E-ON | onsemi |
Description: STEP-DOWN SWITCHING REGULATOR Packaging: Bulk |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTDV5805NT4G | onsemi |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V |
auf Bestellung 14538 Stücke: Lieferzeit 10-14 Tag (e) |
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NLVHC1G08DTT1G | onsemi |
![]() Packaging: Bulk |
auf Bestellung 1164 Stücke: Lieferzeit 10-14 Tag (e) |
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SGP6N60UFDTU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 52 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 3A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 15ns/60ns Switching Energy: 57µJ (on), 25µJ (off) Test Condition: 300V, 3A, 80Ohm, 15V Gate Charge: 15 nC Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 25 A Power - Max: 30 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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LB1973JA-AH | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-LSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Interface: Parallel Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 1.8V ~ 7.5V Applications: Camera Technology: Bipolar Voltage - Load: 1.8V ~ 7.5V Supplier Device Package: 16-SSOP Motor Type - Stepper: Bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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LB1973JA-AH | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 16-LSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Interface: Parallel Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 1.8V ~ 7.5V Applications: Camera Technology: Bipolar Voltage - Load: 1.8V ~ 7.5V Supplier Device Package: 16-SSOP Motor Type - Stepper: Bipolar |
auf Bestellung 143 Stücke: Lieferzeit 10-14 Tag (e) |
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LB1947-E | onsemi |
![]() Packaging: Tube Package / Case: 13-SIP Exposed Tab Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: Parallel Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Bipolar Voltage - Load: 10V ~ 45V Supplier Device Package: 13-SIPHJ Motor Type - AC, DC: Brushed DC |
auf Bestellung 115 Stücke: Lieferzeit 10-14 Tag (e) |
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LB1947-E | onsemi |
![]() Packaging: Tube Package / Case: 13-SIP Exposed Tab Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: Parallel Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Bipolar Voltage - Load: 10V ~ 45V Supplier Device Package: 13-SIPHJ Motor Type - AC, DC: Brushed DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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LB1946-E | onsemi |
![]() Packaging: Tube Package / Case: 28-SDIP (0.500", 12.70mm) Exposed Pad Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.5A Interface: Parallel, Serial Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 4.5V ~ 5.5V Applications: General Purpose Technology: Bipolar Voltage - Load: 10V ~ 45V Supplier Device Package: 28-HDIP Motor Type - Stepper: Bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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GBPC2501W | onsemi |
![]() Packaging: Tray Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
auf Bestellung 148 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBD914LT1 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 (TO-236) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NCV8170AMX120TCG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 0.9 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-XDFN (1x1) Voltage - Output (Min/Fixed): 1.2V Control Features: Enable PSRR: 63dB ~ 57dB (1kHz) Protection Features: Over Current, Over Temperature Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 65000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV8170AMX120TCG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 0.9 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-XDFN (1x1) Voltage - Output (Min/Fixed): 1.2V Control Features: Enable PSRR: 63dB ~ 57dB (1kHz) Protection Features: Over Current, Over Temperature Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 69935 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV8170BXV150T2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 0.9 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SOT-563 Voltage - Output (Min/Fixed): 1.5V Control Features: Enable PSRR: 57dB (1kHz) Protection Features: Over Current, Over Temperature |
auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV8170BXV150T2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 0.9 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SOT-563 Voltage - Output (Min/Fixed): 1.5V Control Features: Enable PSRR: 57dB (1kHz) Protection Features: Over Current, Over Temperature |
auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV8170BXV120T2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 0.9 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SOT-563 Voltage - Output (Min/Fixed): 1.2V Control Features: Enable PSRR: 63dB ~ 57dB (1kHz) Protection Features: Over Current, Over Temperature |
auf Bestellung 76000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV8170BXV120T2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 0.9 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SOT-563 Voltage - Output (Min/Fixed): 1.2V Control Features: Enable PSRR: 63dB ~ 57dB (1kHz) Protection Features: Over Current, Over Temperature |
auf Bestellung 76000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV8170BMX180TCG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 0.9 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-XDFN (1x1) Voltage - Output (Min/Fixed): 1.8V Control Features: Enable PSRR: 57dB (1kHz) Voltage Dropout (Max): 0.5V @ 150mA Protection Features: Over Current, Over Temperature |
auf Bestellung 88000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS8884-G |
Hersteller: onsemi
Description: MOSFET N-CH 30V 8.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 15 V
Description: MOSFET N-CH 30V 8.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMF26AT1 |
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Hersteller: onsemi
Description: TVS DIODE 26VWM 42.1VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.8A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 26VWM 42.1VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.8A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MSD1819A-RT1G |
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Hersteller: onsemi
Description: TRANS NPN 50V 0.1A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS NPN 50V 0.1A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.08 EUR |
6000+ | 0.07 EUR |
9000+ | 0.07 EUR |
MSD1819A-RT1G |
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Hersteller: onsemi
Description: TRANS NPN 50V 0.1A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS NPN 50V 0.1A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 11458 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
46+ | 0.39 EUR |
75+ | 0.24 EUR |
120+ | 0.15 EUR |
500+ | 0.11 EUR |
1000+ | 0.10 EUR |
MSD1819A-RT1G |
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Hersteller: onsemi
Description: TRANS NPN 50V 0.1A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS NPN 50V 0.1A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NSVMSD1819A-RT1G |
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Hersteller: onsemi
Description: TRANS NPN 50V 0.1A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Description: TRANS NPN 50V 0.1A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NSVMSD601-RT1G |
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auf Bestellung 123000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
29+ | 0.62 EUR |
42+ | 0.42 EUR |
100+ | 0.21 EUR |
500+ | 0.17 EUR |
1000+ | 0.13 EUR |
NTMFD4951NFT1G |
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
202+ | 2.31 EUR |
NTMFD4951NFT3G |
Hersteller: onsemi
Description: MOSFET N-CH 30V 10.8A 8DFN DL
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Description: MOSFET N-CH 30V 10.8A 8DFN DL
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
auf Bestellung 14900 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
182+ | 2.55 EUR |
NTMFD4C50NT1G |
Hersteller: onsemi
Description: MOSFET N-CH 30V 12A 8DFN DL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Description: MOSFET N-CH 30V 12A 8DFN DL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTMFD4C87NT1G |
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Hersteller: onsemi
Description: MOSFET 2N-CH 30V 11.7A 8DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET 2N-CH 30V 11.7A 8DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
130+ | 3.71 EUR |
NTMFD4C88NT1G |
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Hersteller: onsemi
Description: MOSFET 2N-CH 30V 11.7A 8DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.2A
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET 2N-CH 30V 11.7A 8DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.2A
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
169+ | 2.89 EUR |
NVTFS016N06CTAG |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 8A/32A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 8A/32A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12700 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 2.39 EUR |
11+ | 1.60 EUR |
100+ | 1.13 EUR |
500+ | 0.96 EUR |
NTTFS016N06CTAG |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 8A/32A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
Description: MOSFET N-CH 60V 8A/32A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
auf Bestellung 16380 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 1.69 EUR |
17+ | 1.05 EUR |
100+ | 0.69 EUR |
500+ | 0.53 EUR |
NVMFS016N06CT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 10A/33A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 10A/33A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 16500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 2.43 EUR |
10+ | 1.84 EUR |
100+ | 1.39 EUR |
500+ | 1.13 EUR |
NVTFWS016N06CTAG |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 8A/32A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 8A/32A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
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NVMFWS016N06CT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 10A/33A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 10A/33A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTMFS016N06CT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 10A/33A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
Description: MOSFET N-CH 60V 10A/33A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
auf Bestellung 17700 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 1.87 EUR |
15+ | 1.17 EUR |
100+ | 0.77 EUR |
500+ | 0.60 EUR |
NVMFD016N06CT1G |
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 9A/32A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 9A/32A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 3.56 EUR |
10+ | 2.96 EUR |
100+ | 2.35 EUR |
500+ | 1.99 EUR |
MM74HCT00N |
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Hersteller: onsemi
Description: IC GATE NAND 4CH 2-INP 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4.8mA, 4.8mA
Number of Inputs: 2
Supplier Device Package: 14-MDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 23ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Description: IC GATE NAND 4CH 2-INP 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4.8mA, 4.8mA
Number of Inputs: 2
Supplier Device Package: 14-MDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 23ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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MC74HC08ADTR2G-Q |
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Hersteller: onsemi
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NLJ74HC08ADTR2G |
Hersteller: onsemi
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 19ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 19ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
auf Bestellung 43472 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1285+ | 0.36 EUR |
NCV7808ABD2TR4G |
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Hersteller: onsemi
Description: IC REG LINEAR 8V 1A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: D2PAK-3
Voltage - Output (Min/Fixed): 8V
PSRR: 62dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 8V 1A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: D2PAK-3
Voltage - Output (Min/Fixed): 8V
PSRR: 62dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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Stück im Wert von UAH
NCV7808ABD2TR4G |
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Hersteller: onsemi
Description: IC REG LINEAR 8V 1A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: D2PAK-3
Voltage - Output (Min/Fixed): 8V
PSRR: 62dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 8V 1A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: D2PAK-3
Voltage - Output (Min/Fixed): 8V
PSRR: 62dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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Stück im Wert von UAH
BCX71K |
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Hersteller: onsemi
Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTMFS4934NT3G |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 147A SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 147A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 930mW (Ta), 69.44W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5505 pF @ 15 V
Description: MOSFET N-CH 30V 147A SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 147A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 930mW (Ta), 69.44W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5505 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DTA114EM3T5G |
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Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8000+ | 0.08 EUR |
16000+ | 0.07 EUR |
24000+ | 0.07 EUR |
40000+ | 0.07 EUR |
DTA114EM3T5G |
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Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 47008 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
40+ | 0.44 EUR |
64+ | 0.28 EUR |
102+ | 0.17 EUR |
500+ | 0.13 EUR |
1000+ | 0.11 EUR |
2000+ | 0.10 EUR |
MMBF4118 |
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Hersteller: onsemi
Description: JFET N-CH 40V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 80 µA @ 10 V
Description: JFET N-CH 40V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 80 µA @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FCPF290N80 |
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Hersteller: onsemi
Description: MOSFET N-CH 800V 17A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V
Description: MOSFET N-CH 800V 17A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V
auf Bestellung 665 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 5.97 EUR |
50+ | 4.77 EUR |
100+ | 4.69 EUR |
CAT24WC04LI |
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Hersteller: onsemi
Description: IC EEPROM 4KBIT I2C 400KHZ 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Write Cycle Time - Word, Page: 10ms
Memory Interface: I2C
Access Time: 1 µs
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT I2C 400KHZ 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Write Cycle Time - Word, Page: 10ms
Memory Interface: I2C
Access Time: 1 µs
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
auf Bestellung 37987 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4365+ | 0.11 EUR |
CAT24WC128W |
Hersteller: onsemi
Description: IC EEPROM 128KBIT I2C 1MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: I²C
Access Time: 550 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 128KBIT I2C 1MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: I²C
Access Time: 550 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
auf Bestellung 6558 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6558+ | 0.10 EUR |
CAT24WC02L |
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Hersteller: onsemi
Description: IC EEPROM 2KBIT I2C 400KHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: I²C
Access Time: 1 µs
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT I2C 400KHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: I²C
Access Time: 1 µs
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
auf Bestellung 6263 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6263+ | 0.10 EUR |
CAT24WC128WI |
Hersteller: onsemi
Description: IC EEPROM 128KBIT I2C 1MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: I²C
Access Time: 550 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 128KBIT I2C 1MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: I²C
Access Time: 550 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
auf Bestellung 3263 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3263+ | 0.18 EUR |
CAT24C03VP2GI-T3 |
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Hersteller: onsemi
Description: IC EEPROM 2KBIT I2C 400KHZ 8TDFN
Packaging: Bulk
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT I2C 400KHZ 8TDFN
Packaging: Bulk
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2219+ | 0.23 EUR |
CAT24C03LGI |
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Hersteller: onsemi
Description: IC EEPROM 2KBIT I2C 400KHZ 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT I2C 400KHZ 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
auf Bestellung 8879 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2219+ | 0.22 EUR |
LV5805M-TE-L-E |
auf Bestellung 101000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1401+ | 0.34 EUR |
LV5809NMX-TLM-H |
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auf Bestellung 305000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1025+ | 0.47 EUR |
LV5803NM-TE-L-E-ON |
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
888+ | 0.56 EUR |
NTDV5805NT4G |
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Hersteller: onsemi
Description: MOSFET N-CH 40V 51A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
Description: MOSFET N-CH 40V 51A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
auf Bestellung 14538 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
833+ | 0.58 EUR |
NLVHC1G08DTT1G |
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auf Bestellung 1164 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1164+ | 0.47 EUR |
SGP6N60UFDTU |
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Hersteller: onsemi
Description: IGBT 600V 6A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 3A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 15ns/60ns
Switching Energy: 57µJ (on), 25µJ (off)
Test Condition: 300V, 3A, 80Ohm, 15V
Gate Charge: 15 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 30 W
Description: IGBT 600V 6A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 3A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 15ns/60ns
Switching Energy: 57µJ (on), 25µJ (off)
Test Condition: 300V, 3A, 80Ohm, 15V
Gate Charge: 15 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 30 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LB1973JA-AH |
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Hersteller: onsemi
Description: IC MTR DRV BIPLR 1.8-7.5V 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.8V ~ 7.5V
Applications: Camera
Technology: Bipolar
Voltage - Load: 1.8V ~ 7.5V
Supplier Device Package: 16-SSOP
Motor Type - Stepper: Bipolar
Description: IC MTR DRV BIPLR 1.8-7.5V 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.8V ~ 7.5V
Applications: Camera
Technology: Bipolar
Voltage - Load: 1.8V ~ 7.5V
Supplier Device Package: 16-SSOP
Motor Type - Stepper: Bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LB1973JA-AH |
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Hersteller: onsemi
Description: IC MTR DRV BIPLR 1.8-7.5V 16SSOP
Packaging: Cut Tape (CT)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.8V ~ 7.5V
Applications: Camera
Technology: Bipolar
Voltage - Load: 1.8V ~ 7.5V
Supplier Device Package: 16-SSOP
Motor Type - Stepper: Bipolar
Description: IC MTR DRV BIPLR 1.8-7.5V 16SSOP
Packaging: Cut Tape (CT)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.8V ~ 7.5V
Applications: Camera
Technology: Bipolar
Voltage - Load: 1.8V ~ 7.5V
Supplier Device Package: 16-SSOP
Motor Type - Stepper: Bipolar
auf Bestellung 143 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 2.43 EUR |
10+ | 2.18 EUR |
25+ | 2.05 EUR |
100+ | 1.64 EUR |
LB1947-E |
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Hersteller: onsemi
Description: IC MTR DRVR 4.75V-5.25V 13SIPHJ
Packaging: Tube
Package / Case: 13-SIP Exposed Tab
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 10V ~ 45V
Supplier Device Package: 13-SIPHJ
Motor Type - AC, DC: Brushed DC
Description: IC MTR DRVR 4.75V-5.25V 13SIPHJ
Packaging: Tube
Package / Case: 13-SIP Exposed Tab
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 10V ~ 45V
Supplier Device Package: 13-SIPHJ
Motor Type - AC, DC: Brushed DC
auf Bestellung 115 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
115+ | 4.46 EUR |
LB1947-E |
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Hersteller: onsemi
Description: IC MTR DRVR 4.75V-5.25V 13SIPHJ
Packaging: Tube
Package / Case: 13-SIP Exposed Tab
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 10V ~ 45V
Supplier Device Package: 13-SIPHJ
Motor Type - AC, DC: Brushed DC
Description: IC MTR DRVR 4.75V-5.25V 13SIPHJ
Packaging: Tube
Package / Case: 13-SIP Exposed Tab
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 10V ~ 45V
Supplier Device Package: 13-SIPHJ
Motor Type - AC, DC: Brushed DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LB1946-E |
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Hersteller: onsemi
Description: IC MTR DRV BIPLR 4.5-5.5V 28HDIP
Packaging: Tube
Package / Case: 28-SDIP (0.500", 12.70mm) Exposed Pad
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel, Serial
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 10V ~ 45V
Supplier Device Package: 28-HDIP
Motor Type - Stepper: Bipolar
Description: IC MTR DRV BIPLR 4.5-5.5V 28HDIP
Packaging: Tube
Package / Case: 28-SDIP (0.500", 12.70mm) Exposed Pad
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel, Serial
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 10V ~ 45V
Supplier Device Package: 28-HDIP
Motor Type - Stepper: Bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GBPC2501W |
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Hersteller: onsemi
Description: BRIDGE RECT 1P 100V 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: BRIDGE RECT 1P 100V 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 148 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 12.13 EUR |
50+ | 6.54 EUR |
100+ | 6.00 EUR |
MMBD914LT1 |
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Hersteller: onsemi
Description: DIODE FAST SWITCH 100V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE FAST SWITCH 100V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCV8170AMX120TCG |
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Hersteller: onsemi
Description: IC REG LINEAR 1.2V 150MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.9 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 63dB ~ 57dB (1kHz)
Protection Features: Over Current, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 1.2V 150MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.9 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 63dB ~ 57dB (1kHz)
Protection Features: Over Current, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 65000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.30 EUR |
10000+ | 0.28 EUR |
50000+ | 0.27 EUR |
NCV8170AMX120TCG |
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Hersteller: onsemi
Description: IC REG LINEAR 1.2V 150MA 4XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.9 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 63dB ~ 57dB (1kHz)
Protection Features: Over Current, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 1.2V 150MA 4XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.9 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 63dB ~ 57dB (1kHz)
Protection Features: Over Current, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 69935 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 0.97 EUR |
22+ | 0.83 EUR |
25+ | 0.77 EUR |
100+ | 0.57 EUR |
250+ | 0.48 EUR |
500+ | 0.46 EUR |
1000+ | 0.34 EUR |
2500+ | 0.32 EUR |
NCV8170BXV150T2G |
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Hersteller: onsemi
Description: IC REG LIN 1.5V 150MA SOT563-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.9 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-563
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
PSRR: 57dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LIN 1.5V 150MA SOT563-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.9 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-563
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
PSRR: 57dB (1kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4000+ | 0.31 EUR |
8000+ | 0.28 EUR |
12000+ | 0.27 EUR |
28000+ | 0.26 EUR |
NCV8170BXV150T2G |
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Hersteller: onsemi
Description: IC REG LIN 1.5V 150MA SOT563-6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.9 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-563
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
PSRR: 57dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LIN 1.5V 150MA SOT563-6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.9 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-563
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
PSRR: 57dB (1kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 0.92 EUR |
23+ | 0.79 EUR |
25+ | 0.74 EUR |
100+ | 0.55 EUR |
250+ | 0.46 EUR |
500+ | 0.44 EUR |
1000+ | 0.33 EUR |
NCV8170BXV120T2G |
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Hersteller: onsemi
Description: IC REG LIN 1.2V 150MA SOT563-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.9 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-563
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 63dB ~ 57dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LIN 1.2V 150MA SOT563-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.9 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-563
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 63dB ~ 57dB (1kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 76000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4000+ | 0.31 EUR |
8000+ | 0.28 EUR |
12000+ | 0.27 EUR |
28000+ | 0.26 EUR |
NCV8170BXV120T2G |
![]() |
Hersteller: onsemi
Description: IC REG LIN 1.2V 150MA SOT563-6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.9 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-563
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 63dB ~ 57dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LIN 1.2V 150MA SOT563-6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.9 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-563
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 63dB ~ 57dB (1kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 76000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 0.92 EUR |
23+ | 0.79 EUR |
25+ | 0.74 EUR |
100+ | 0.55 EUR |
250+ | 0.46 EUR |
500+ | 0.44 EUR |
1000+ | 0.33 EUR |
NCV8170BMX180TCG |
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Hersteller: onsemi
Description: IC REG LINEAR 1.8V 150MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.9 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 57dB (1kHz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.8V 150MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.9 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 57dB (1kHz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Current, Over Temperature
auf Bestellung 88000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.31 EUR |
6000+ | 0.29 EUR |
15000+ | 0.28 EUR |
30000+ | 0.27 EUR |