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NXH020F120MNF1PG NXH020F120MNF1PG onsemi nxh020f120mnf1-d.pdf Description: MOSFET 4N-CH 1200V 51A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: 22-PIM (33.8x42.5)
auf Bestellung 50 Stücke:
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1+192.97 EUR
28+167.64 EUR
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NXH020F120MNF1PTG NXH020F120MNF1PTG onsemi nxh020f120mnf1-d.pdf Description: MOSFET 4N-CH 1200V 51A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: 22-PIM (33.8x42.5)
auf Bestellung 2660 Stücke:
Lieferzeit 10-14 Tag (e)
1+232.36 EUR
28+208.68 EUR
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1N456ATR 1N456ATR onsemi 1n456a-d.pdf Description: DIODE GEN PURP 30V 500MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 25 V
auf Bestellung 20000 Stücke:
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10000+0.033 EUR
Mindestbestellmenge: 10000
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1N456ATR 1N456ATR onsemi 1n456a-d.pdf Description: DIODE GEN PURP 30V 500MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 25 V
auf Bestellung 39952 Stücke:
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72+0.25 EUR
105+0.17 EUR
214+0.083 EUR
500+0.069 EUR
1000+0.048 EUR
2000+0.041 EUR
5000+0.038 EUR
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NTHL040N120M3S NTHL040N120M3S onsemi nthl040n120m3s-d.pdf Description: SIC MOS TO247-3L 40MOHM 1200V M3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 172737 Stücke:
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1+17.86 EUR
30+10.65 EUR
120+9.07 EUR
510+7.91 EUR
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NTH4L040N120SC1 NTH4L040N120SC1 onsemi nth4l040n120sc1-d.pdf Description: SICFET N-CH 1200V 58A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 319W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V
auf Bestellung 7182 Stücke:
Lieferzeit 10-14 Tag (e)
1+35.9 EUR
30+22.76 EUR
120+19.88 EUR
510+19.49 EUR
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NVBG040N120SC1 NVBG040N120SC1 onsemi nvbg040n120sc1-d.pdf Description: TRANS SJT N-CH 1200V 60A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
800+25.56 EUR
Mindestbestellmenge: 800
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NVBG040N120SC1 NVBG040N120SC1 onsemi nvbg040n120sc1-d.pdf Description: TRANS SJT N-CH 1200V 60A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 2643 Stücke:
Lieferzeit 10-14 Tag (e)
1+44.46 EUR
10+32.44 EUR
100+31.28 EUR
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NVH4L040N120M3S NVH4L040N120M3S onsemi nvh4l040n120m3s-d.pdf Description: SIC MOS TO247-4L 40MOHM 1200V M3
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -3V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 445 Stücke:
Lieferzeit 10-14 Tag (e)
1+32.65 EUR
30+20.53 EUR
120+17.88 EUR
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NVHL040N120SC1 NVHL040N120SC1 onsemi nvhl040n120sc1-d.pdf Description: SICFET N-CH 1200V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 2704 Stücke:
Lieferzeit 10-14 Tag (e)
1+41.73 EUR
30+26.81 EUR
120+23.6 EUR
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NVH4L040N120SC1 NVH4L040N120SC1 onsemi nvh4l040n120sc1-d.pdf Description: SICFET N-CH 1200V 58A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 319W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 221 Stücke:
Lieferzeit 10-14 Tag (e)
1+43 EUR
30+27.7 EUR
120+24.5 EUR
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NTH4L040N120M3S NTH4L040N120M3S onsemi nth4l040n120m3s-d.pdf Description: SILICON CARBIDE (SIC) MOSFET ELI
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 2166 Stücke:
Lieferzeit 10-14 Tag (e)
1+24.5 EUR
30+15.03 EUR
120+12.95 EUR
510+11.95 EUR
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NVBG040N120M3S NVBG040N120M3S onsemi NVBG040N120M3S-D.PDF Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 87200 Stücke:
Lieferzeit 10-14 Tag (e)
800+16.72 EUR
Mindestbestellmenge: 800
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NVBG040N120M3S NVBG040N120M3S onsemi NVBG040N120M3S-D.PDF Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 87714 Stücke:
Lieferzeit 10-14 Tag (e)
1+31.82 EUR
10+22.77 EUR
100+20.46 EUR
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NTBG040N120M3S NTBG040N120M3S onsemi NTBG040N120M3S-D.PDF Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+7.46 EUR
Mindestbestellmenge: 800
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NTBG040N120M3S NTBG040N120M3S onsemi NTBG040N120M3S-D.PDF Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 836 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.07 EUR
10+11.78 EUR
100+9.13 EUR
Mindestbestellmenge: 2
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NTBG040N120SC1 NTBG040N120SC1 onsemi ntbg040n120sc1-d.pdf Description: SICFET N-CH 1200V 60A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
auf Bestellung 26400 Stücke:
Lieferzeit 10-14 Tag (e)
800+19.59 EUR
Mindestbestellmenge: 800
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NTBG040N120SC1 NTBG040N120SC1 onsemi ntbg040n120sc1-d.pdf Description: SICFET N-CH 1200V 60A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
auf Bestellung 26818 Stücke:
Lieferzeit 10-14 Tag (e)
1+36.03 EUR
10+25.97 EUR
100+23.98 EUR
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NTHL040N120SC1 NTHL040N120SC1 onsemi nthl040n120sc1-d.pdf Description: SICFET N-CH 1200V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V
auf Bestellung 11101 Stücke:
Lieferzeit 10-14 Tag (e)
1+35.5 EUR
30+22.49 EUR
120+19.64 EUR
510+19.22 EUR
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NTC040N120SC1 NTC040N120SC1 onsemi ntc040n120sc1-d.pdf Description: SIC MOS WAFER SALES 40MOHM 1200V
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V
auf Bestellung 26306 Stücke:
Lieferzeit 10-14 Tag (e)
819+18.29 EUR
Mindestbestellmenge: 819
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FFSP10120A FFSP10120A onsemi ffsp10120a-d.pdf Description: DIODE SIL CARB 1200V 10A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 612pF @ 1V, 100kHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 13629 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.32 EUR
50+6.11 EUR
100+5.6 EUR
500+4.74 EUR
Mindestbestellmenge: 2
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FFSP1065B FFSP1065B onsemi ffsp1065b-d.pdf Description: DIODE SIL CARB 650V 11A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
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FFSP1265A FFSP1265A onsemi ffsp1265a-d.pdf Description: DIODE SIL CARB 650V 15A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 665pF @ 1V, 100kHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
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FFSP1065A FFSP1065A onsemi ffsp1065a-d.pdf Description: DIODE SIL CARB 650V 15A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 100kHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
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FFSP1065B-F085 FFSP1065B-F085 onsemi ffsp1065b-f085-d.pdf Description: DIODE SIL CARB 650V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
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FFSP1665A FFSP1665A onsemi ffsp1665a-d.pdf Description: DIODE SIL CARB 650V 16A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 887pF @ 1V, 100kHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
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FFSP15120A FFSP15120A onsemi ffsp15120a-d.pdf Description: DIODE SIL CARB 1200V 15A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 936pF @ 1V, 100kHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
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NSVMUN531335DW1T3G NSVMUN531335DW1T3G onsemi mun531335dw1-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms, 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms, 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NSVMUN531335DW1T3G NSVMUN531335DW1T3G onsemi mun531335dw1-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms, 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms, 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NCT7491MNTXG NCT7491MNTXG onsemi nct7491-d.pdf Description: IC REMOTE THERMAL MONITOR 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Output Type: 2-Wire Serial, I2C/SMBUS
Mounting Type: Surface Mount
Function: Temp Monitoring System (Sensor)
Accuracy: ±3.5°C
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Internal and External
Sensing Temperature: 0°C ~ 85°C, -40°C ~ 125°C
Topology: ADC, Comparator, Multiplexer, Register Bank
Output Alarm: Yes
Output Fan: Yes
Supplier Device Package: 24-QFN (4x4)
Produkt ist nicht verfügbar
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NCT7491MNTXG NCT7491MNTXG onsemi nct7491-d.pdf Description: IC REMOTE THERMAL MONITOR 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Output Type: 2-Wire Serial, I2C/SMBUS
Mounting Type: Surface Mount
Function: Temp Monitoring System (Sensor)
Accuracy: ±3.5°C
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Internal and External
Sensing Temperature: 0°C ~ 85°C, -40°C ~ 125°C
Topology: ADC, Comparator, Multiplexer, Register Bank
Output Alarm: Yes
Output Fan: Yes
Supplier Device Package: 24-QFN (4x4)
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AFGHL75T65SQDC AFGHL75T65SQDC onsemi afghl75t65sqdc-d.pdf Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/107.2ns
Switching Energy: 1.68mJ (on), 1.11mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 139 nC
Grade: Automotive
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Qualification: AEC-Q101
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FGH4L75T65MQDC50 FGH4L75T65MQDC50 onsemi fgh4l75t65mqdc50-d.pdf Description: IGBT FS 650V 110A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 29ns/187ns
Switching Energy: 720µJ (on), 960µJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 146 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 385 W
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MC74AC20MELG MC74AC20MELG onsemi mc74ac20-d.pdf Description: IC GATE NAND 2CH 4-INP SOEIAJ-14
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 4
Supplier Device Package: SOEIAJ-14
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 4 µA
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MC74AC20NG MC74AC20NG onsemi mc74ac20-d.pdf Description: IC GATE NAND 2CH 4-INP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 4
Supplier Device Package: 14-PDIP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 4 µA
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NXH100B120H3Q0PG NXH100B120H3Q0PG onsemi nxh100b120h3q0-d.pdf Description: IGBT MOD 1200V 61A 186W 22-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: 22-PIM (55x32.5)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 61 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 186 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 9.075 nF @ 20 V
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NXH100B120H3Q0PTG NXH100B120H3Q0PTG onsemi nxh100b120h3q0-d.pdf Description: IGBT MOD 1200V 50A 186W 22-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: 22-PIM (55x32.5)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 186 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 9.075 nF @ 20 V
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NXH100B120H3Q0SG NXH100B120H3Q0SG onsemi nxh100b120h3q0-d.pdf Description: IGBT MOD 1200V 61A 186W 22-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: 22-PIM/Q0BOOST (55x32.5)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 61 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 186 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 9.075 nF @ 20 V
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NXH100B120H3Q0STG NXH100B120H3Q0STG onsemi nxh100b120h3q0-d.pdf Description: IGBT MOD 1200V 50A 186W 22-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: 22-PIM/Q0BOOST (55x32.5)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 186 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 9.075 nF @ 20 V
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NXH40B120MNQ0SNG NXH40B120MNQ0SNG onsemi nxh40b120mnq0-d.pdf Description: IGBT MODULE 118W 22-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: 22-PIM/Q0BOOST (55x32.5)
Power - Max: 118 W
Input Capacitance (Cies) @ Vce: 3.227 nF @ 20 V
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NTH4L015N065SC1 NTH4L015N065SC1 onsemi nth4l015n065sc1-d.pdf Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 325 V
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NTHL015N065SC1 NTHL015N065SC1 onsemi nthl015n065sc1-d.pdf Description: SILICON CARBIDE (SIC) MOSFET - 1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 163A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 643W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 325 V
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NTH4L014N120M3P NTH4L014N120M3P onsemi nth4l014n120m3p-d.pdf Description: SIC MOSFET 1200 V 14 MOHM M3P SE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 127A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 74A, 18V
Power Dissipation (Max): 686W (Tc)
Vgs(th) (Max) @ Id: 4.63V @ 37mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 329 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 800 V
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MPSA18RLRAG MPSA18RLRAG onsemi mpsa18-d.pdf Description: TRANS NPN 45V 0.2A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
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2597+0.18 EUR
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MPSA18RLRMG MPSA18RLRMG onsemi mpsa18-d.pdf Description: TRANS NPN 45V 0.2A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
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2597+0.18 EUR
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CAT1832Z-GT3 CAT1832Z-GT3 onsemi ONSM-S-A0000710844-1.pdf?t.download=true&u=5oefqw Description: CAT1832 - 3.3V SUPPLY MONITOR, W
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 2.55V, 2.88V
Supplier Device Package: 8-MSOP
DigiKey Programmable: Not Verified
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CAT1232LPZ-GT3 CAT1232LPZ-GT3 onsemi CAT1232LP%2CCAT1832.pdf Description: IC SUPERVISOR 1 CHANNEL 8MSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Output: Open Drain, Push-Pull
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 4.37V, 4.62V
Supplier Device Package: 8-MSOP
DigiKey Programmable: Not Verified
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NXH240B120H3Q1PG NXH240B120H3Q1PG onsemi nxh240b120h3q1pg-d.pdf Description: IGBT MOD 1200V 68A 158W 32-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
NTC Thermistor: Yes
Supplier Device Package: 32-PIM (71x37.4)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 158 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 18.151 nF @ 20 V
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NXH350N100H4Q2F2P1G NXH350N100H4Q2F2P1G onsemi nxh350n100h4q2f2p1g-d.pdf Description: IGBT MOD 1000V 303A 276W 42-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 375A
NTC Thermistor: Yes
Supplier Device Package: 42-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 303 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 276 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 24.146 nF @ 20 V
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NXH450B100H4Q2F2PG NXH450B100H4Q2F2PG onsemi nxh450b100h4q2f2-d.pdf Description: IGBT MOD 1000V 101A 234W 56-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: 56-PIM (93x47)
Current - Collector (Ic) (Max): 101 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 234 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 9.342 nF @ 20 V
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NXH350N100H4Q2F2S1G NXH350N100H4Q2F2S1G onsemi nxh350n100h4q2f2p1g-d.pdf Description: IGBT MOD 1000V 303A 276W 42-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 375A
NTC Thermistor: Yes
Supplier Device Package: 42-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 303 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 276 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 24.146 nF @ 20 V
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NXH300B100H4Q2F2SG-R onsemi nxh300b100h4q2f2-d.pdf Description: IGBT MOD 1000V 73A 194W 53-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: 53-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 73 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 194 W
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 6.323 nF @ 20 V
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NXH450B100H4Q2F2PG-R NXH450B100H4Q2F2PG-R onsemi nxh450b100h4q2f2-d.pdf Description: IGBT MOD 1000V 101A 234W 56-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: 56-PIM (93x47)
Current - Collector (Ic) (Max): 101 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 234 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 9.342 nF @ 20 V
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NXH350N100H4Q2F2S1G-R NXH350N100H4Q2F2S1G-R onsemi nxh350n100h4q2f2p1g-d.pdf Description: IGBT MOD 1000V 303A 592W 42-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 375A
NTC Thermistor: Yes
Supplier Device Package: 42-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 303 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 592 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 24.146 nF @ 20 V
auf Bestellung 72 Stücke:
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NXH400N100H4Q2F2SG NXH400N100H4Q2F2SG onsemi nxh400n100h4q2f2-d.pdf Description: IGBT MOD 1000V 409A 959W 42-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: 42-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 409 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 959 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 26.093 nF @ 20 V
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NXH400N100H4Q2F2PG NXH400N100H4Q2F2PG onsemi nxh400n100h4q2f2-d.pdf Description: IGBT MOD 1000V 409A 959W 42-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: 42-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 409 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 959 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 26.093 nF @ 20 V
auf Bestellung 139 Stücke:
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NXH400N100H4Q2F2SG-R NXH400N100H4Q2F2SG-R onsemi nxh400n100h4q2f2-d.pdf Description: IGBT MOD 1000V 409A 959W 42-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: 42-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 409 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 959 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 26.093 nF @ 20 V
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NCV8164CSN180T1G NCV8164CSN180T1G onsemi PdfFile168577.pdf Description: IC REG LINEAR 1.8V 300MA 5-TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 5V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable, Power Good
Grade: Automotive
PSRR: 83dB ~ 61dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.255V @ 300mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
auf Bestellung 2405 Stücke:
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20+0.88 EUR
29+0.62 EUR
32+0.56 EUR
100+0.48 EUR
250+0.45 EUR
500+0.43 EUR
1000+0.41 EUR
Mindestbestellmenge: 20
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NCV97311MW33AR2G NCV97311MW33AR2G onsemi ncv97311a-d.pdf Description: IC PMU MULTI-OUTPUT 32QFNW
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Voltage - Output: 3.3V
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 3
Voltage - Input: 4.5V ~ 34V
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 32-QFNW (5x5)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+5.18 EUR
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NCV97311MW33AR2G NCV97311MW33AR2G onsemi ncv97311a-d.pdf Description: IC PMU MULTI-OUTPUT 32QFNW
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Voltage - Output: 3.3V
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 3
Voltage - Input: 4.5V ~ 34V
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 32-QFNW (5x5)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 15000 Stücke:
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2+9.96 EUR
10+9 EUR
25+8.58 EUR
100+7.11 EUR
250+6.49 EUR
500+6.07 EUR
1000+5.44 EUR
2500+5.23 EUR
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NXH020F120MNF1PG nxh020f120mnf1-d.pdf
NXH020F120MNF1PG
Hersteller: onsemi
Description: MOSFET 4N-CH 1200V 51A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: 22-PIM (33.8x42.5)
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1+192.97 EUR
28+167.64 EUR
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NXH020F120MNF1PTG nxh020f120mnf1-d.pdf
NXH020F120MNF1PTG
Hersteller: onsemi
Description: MOSFET 4N-CH 1200V 51A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: 22-PIM (33.8x42.5)
auf Bestellung 2660 Stücke:
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Anzahl Preis
1+232.36 EUR
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1N456ATR 1n456a-d.pdf
1N456ATR
Hersteller: onsemi
Description: DIODE GEN PURP 30V 500MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 25 V
auf Bestellung 20000 Stücke:
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10000+0.033 EUR
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1N456ATR 1n456a-d.pdf
1N456ATR
Hersteller: onsemi
Description: DIODE GEN PURP 30V 500MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 25 V
auf Bestellung 39952 Stücke:
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72+0.25 EUR
105+0.17 EUR
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500+0.069 EUR
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2000+0.041 EUR
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NTHL040N120M3S nthl040n120m3s-d.pdf
NTHL040N120M3S
Hersteller: onsemi
Description: SIC MOS TO247-3L 40MOHM 1200V M3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 172737 Stücke:
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Anzahl Preis
1+17.86 EUR
30+10.65 EUR
120+9.07 EUR
510+7.91 EUR
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NTH4L040N120SC1 nth4l040n120sc1-d.pdf
NTH4L040N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 58A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 319W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V
auf Bestellung 7182 Stücke:
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Anzahl Preis
1+35.9 EUR
30+22.76 EUR
120+19.88 EUR
510+19.49 EUR
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NVBG040N120SC1 nvbg040n120sc1-d.pdf
NVBG040N120SC1
Hersteller: onsemi
Description: TRANS SJT N-CH 1200V 60A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+25.56 EUR
Mindestbestellmenge: 800
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NVBG040N120SC1 nvbg040n120sc1-d.pdf
NVBG040N120SC1
Hersteller: onsemi
Description: TRANS SJT N-CH 1200V 60A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 2643 Stücke:
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Anzahl Preis
1+44.46 EUR
10+32.44 EUR
100+31.28 EUR
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NVH4L040N120M3S nvh4l040n120m3s-d.pdf
NVH4L040N120M3S
Hersteller: onsemi
Description: SIC MOS TO247-4L 40MOHM 1200V M3
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -3V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 445 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+32.65 EUR
30+20.53 EUR
120+17.88 EUR
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NVHL040N120SC1 nvhl040n120sc1-d.pdf
NVHL040N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 2704 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+41.73 EUR
30+26.81 EUR
120+23.6 EUR
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NVH4L040N120SC1 nvh4l040n120sc1-d.pdf
NVH4L040N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 58A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 319W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 221 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+43 EUR
30+27.7 EUR
120+24.5 EUR
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NTH4L040N120M3S nth4l040n120m3s-d.pdf
NTH4L040N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET ELI
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 2166 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.5 EUR
30+15.03 EUR
120+12.95 EUR
510+11.95 EUR
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NVBG040N120M3S NVBG040N120M3S-D.PDF
NVBG040N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 87200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+16.72 EUR
Mindestbestellmenge: 800
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NVBG040N120M3S NVBG040N120M3S-D.PDF
NVBG040N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 87714 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+31.82 EUR
10+22.77 EUR
100+20.46 EUR
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NTBG040N120M3S NTBG040N120M3S-D.PDF
NTBG040N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+7.46 EUR
Mindestbestellmenge: 800
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NTBG040N120M3S NTBG040N120M3S-D.PDF
NTBG040N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 836 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.07 EUR
10+11.78 EUR
100+9.13 EUR
Mindestbestellmenge: 2
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NTBG040N120SC1 ntbg040n120sc1-d.pdf
NTBG040N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 60A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
auf Bestellung 26400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+19.59 EUR
Mindestbestellmenge: 800
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NTBG040N120SC1 ntbg040n120sc1-d.pdf
NTBG040N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 60A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
auf Bestellung 26818 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+36.03 EUR
10+25.97 EUR
100+23.98 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTHL040N120SC1 nthl040n120sc1-d.pdf
NTHL040N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V
auf Bestellung 11101 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+35.5 EUR
30+22.49 EUR
120+19.64 EUR
510+19.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTC040N120SC1 ntc040n120sc1-d.pdf
NTC040N120SC1
Hersteller: onsemi
Description: SIC MOS WAFER SALES 40MOHM 1200V
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V
auf Bestellung 26306 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
819+18.29 EUR
Mindestbestellmenge: 819
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FFSP10120A ffsp10120a-d.pdf
FFSP10120A
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 10A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 612pF @ 1V, 100kHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 13629 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.32 EUR
50+6.11 EUR
100+5.6 EUR
500+4.74 EUR
Mindestbestellmenge: 2
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FFSP1065B ffsp1065b-d.pdf
FFSP1065B
Hersteller: onsemi
Description: DIODE SIL CARB 650V 11A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 27003 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.95 EUR
50+3.02 EUR
100+2.74 EUR
500+2.24 EUR
1000+2.08 EUR
2000+2 EUR
Mindestbestellmenge: 3
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FFSP1265A ffsp1265a-d.pdf
FFSP1265A
Hersteller: onsemi
Description: DIODE SIL CARB 650V 15A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 665pF @ 1V, 100kHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
auf Bestellung 23148 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.97 EUR
50+4.17 EUR
100+3.8 EUR
500+3.15 EUR
1000+2.97 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FFSP1065A ffsp1065a-d.pdf
FFSP1065A
Hersteller: onsemi
Description: DIODE SIL CARB 650V 15A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 100kHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
auf Bestellung 34180 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.84 EUR
50+4.62 EUR
100+4.21 EUR
500+3.5 EUR
1000+3.27 EUR
2000+3.08 EUR
Mindestbestellmenge: 2
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FFSP1065B-F085 ffsp1065b-f085-d.pdf
FFSP1065B-F085
Hersteller: onsemi
Description: DIODE SIL CARB 650V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 772 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.6 EUR
10+4.35 EUR
100+3.07 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FFSP1665A ffsp1665a-d.pdf
FFSP1665A
Hersteller: onsemi
Description: DIODE SIL CARB 650V 16A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 887pF @ 1V, 100kHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
auf Bestellung 1847 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.98 EUR
10+6.69 EUR
100+4.83 EUR
800+3.85 EUR
1600+3.63 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FFSP15120A ffsp15120a-d.pdf
FFSP15120A
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 15A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 936pF @ 1V, 100kHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 2300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.62 EUR
50+6.27 EUR
100+5.76 EUR
500+4.9 EUR
Mindestbestellmenge: 2
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NSVMUN531335DW1T3G mun531335dw1-d.pdf
NSVMUN531335DW1T3G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms, 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms, 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NSVMUN531335DW1T3G mun531335dw1-d.pdf
NSVMUN531335DW1T3G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms, 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms, 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NCT7491MNTXG nct7491-d.pdf
NCT7491MNTXG
Hersteller: onsemi
Description: IC REMOTE THERMAL MONITOR 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Output Type: 2-Wire Serial, I2C/SMBUS
Mounting Type: Surface Mount
Function: Temp Monitoring System (Sensor)
Accuracy: ±3.5°C
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Internal and External
Sensing Temperature: 0°C ~ 85°C, -40°C ~ 125°C
Topology: ADC, Comparator, Multiplexer, Register Bank
Output Alarm: Yes
Output Fan: Yes
Supplier Device Package: 24-QFN (4x4)
Produkt ist nicht verfügbar
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NCT7491MNTXG nct7491-d.pdf
NCT7491MNTXG
Hersteller: onsemi
Description: IC REMOTE THERMAL MONITOR 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Output Type: 2-Wire Serial, I2C/SMBUS
Mounting Type: Surface Mount
Function: Temp Monitoring System (Sensor)
Accuracy: ±3.5°C
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Internal and External
Sensing Temperature: 0°C ~ 85°C, -40°C ~ 125°C
Topology: ADC, Comparator, Multiplexer, Register Bank
Output Alarm: Yes
Output Fan: Yes
Supplier Device Package: 24-QFN (4x4)
auf Bestellung 3895 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.97 EUR
10+4.5 EUR
25+3.85 EUR
100+3.12 EUR
250+2.76 EUR
500+2.54 EUR
1000+2.36 EUR
Mindestbestellmenge: 3
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AFGHL75T65SQDC afghl75t65sqdc-d.pdf
AFGHL75T65SQDC
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/107.2ns
Switching Energy: 1.68mJ (on), 1.11mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 139 nC
Grade: Automotive
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Qualification: AEC-Q101
auf Bestellung 2576 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.86 EUR
30+10.08 EUR
120+8.6 EUR
510+8.07 EUR
Mindestbestellmenge: 2
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FGH4L75T65MQDC50 fgh4l75t65mqdc50-d.pdf
FGH4L75T65MQDC50
Hersteller: onsemi
Description: IGBT FS 650V 110A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 29ns/187ns
Switching Energy: 720µJ (on), 960µJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 146 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 385 W
auf Bestellung 867 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.9 EUR
30+10.1 EUR
120+8.61 EUR
510+8.09 EUR
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MC74AC20MELG mc74ac20-d.pdf
MC74AC20MELG
Hersteller: onsemi
Description: IC GATE NAND 2CH 4-INP SOEIAJ-14
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 4
Supplier Device Package: SOEIAJ-14
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 4 µA
auf Bestellung 11400 Stücke:
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Anzahl Preis
550+0.82 EUR
Mindestbestellmenge: 550
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MC74AC20NG mc74ac20-d.pdf
MC74AC20NG
Hersteller: onsemi
Description: IC GATE NAND 2CH 4-INP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 4
Supplier Device Package: 14-PDIP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 4 µA
auf Bestellung 23240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
790+0.57 EUR
Mindestbestellmenge: 790
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NXH100B120H3Q0PG nxh100b120h3q0-d.pdf
NXH100B120H3Q0PG
Hersteller: onsemi
Description: IGBT MOD 1200V 61A 186W 22-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: 22-PIM (55x32.5)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 61 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 186 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 9.075 nF @ 20 V
auf Bestellung 503 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+101.46 EUR
24+77.31 EUR
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NXH100B120H3Q0PTG nxh100b120h3q0-d.pdf
NXH100B120H3Q0PTG
Hersteller: onsemi
Description: IGBT MOD 1200V 50A 186W 22-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: 22-PIM (55x32.5)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 186 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 9.075 nF @ 20 V
auf Bestellung 166 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+101.46 EUR
24+77.31 EUR
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NXH100B120H3Q0SG nxh100b120h3q0-d.pdf
NXH100B120H3Q0SG
Hersteller: onsemi
Description: IGBT MOD 1200V 61A 186W 22-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: 22-PIM/Q0BOOST (55x32.5)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 61 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 186 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 9.075 nF @ 20 V
auf Bestellung 236 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+101.46 EUR
24+77.31 EUR
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NXH100B120H3Q0STG nxh100b120h3q0-d.pdf
NXH100B120H3Q0STG
Hersteller: onsemi
Description: IGBT MOD 1200V 50A 186W 22-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: 22-PIM/Q0BOOST (55x32.5)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 186 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 9.075 nF @ 20 V
auf Bestellung 119 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+95.15 EUR
24+71.49 EUR
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NXH40B120MNQ0SNG nxh40b120mnq0-d.pdf
NXH40B120MNQ0SNG
Hersteller: onsemi
Description: IGBT MODULE 118W 22-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: 22-PIM/Q0BOOST (55x32.5)
Power - Max: 118 W
Input Capacitance (Cies) @ Vce: 3.227 nF @ 20 V
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+128.67 EUR
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NTH4L015N065SC1 nth4l015n065sc1-d.pdf
NTH4L015N065SC1
Hersteller: onsemi
Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 325 V
auf Bestellung 11049 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+40.76 EUR
30+28.54 EUR
120+26.31 EUR
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NTHL015N065SC1 nthl015n065sc1-d.pdf
NTHL015N065SC1
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - 1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 163A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 643W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 325 V
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+42.2 EUR
30+27.35 EUR
120+26.18 EUR
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NTH4L014N120M3P nth4l014n120m3p-d.pdf
NTH4L014N120M3P
Hersteller: onsemi
Description: SIC MOSFET 1200 V 14 MOHM M3P SE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 127A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 74A, 18V
Power Dissipation (Max): 686W (Tc)
Vgs(th) (Max) @ Id: 4.63V @ 37mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 329 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 800 V
auf Bestellung 9085 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+44.35 EUR
10+32.5 EUR
450+30.83 EUR
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MPSA18RLRAG mpsa18-d.pdf
MPSA18RLRAG
Hersteller: onsemi
Description: TRANS NPN 45V 0.2A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
auf Bestellung 122913 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2597+0.18 EUR
Mindestbestellmenge: 2597
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MPSA18RLRMG mpsa18-d.pdf
MPSA18RLRMG
Hersteller: onsemi
Description: TRANS NPN 45V 0.2A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
auf Bestellung 23565 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2597+0.18 EUR
Mindestbestellmenge: 2597
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CAT1832Z-GT3 ONSM-S-A0000710844-1.pdf?t.download=true&u=5oefqw
CAT1832Z-GT3
Hersteller: onsemi
Description: CAT1832 - 3.3V SUPPLY MONITOR, W
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 2.55V, 2.88V
Supplier Device Package: 8-MSOP
DigiKey Programmable: Not Verified
auf Bestellung 11801 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
303+1.47 EUR
Mindestbestellmenge: 303
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CAT1232LPZ-GT3 CAT1232LP%2CCAT1832.pdf
CAT1232LPZ-GT3
Hersteller: onsemi
Description: IC SUPERVISOR 1 CHANNEL 8MSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Output: Open Drain, Push-Pull
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 4.37V, 4.62V
Supplier Device Package: 8-MSOP
DigiKey Programmable: Not Verified
auf Bestellung 1322 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
330+1.35 EUR
Mindestbestellmenge: 330
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NXH240B120H3Q1PG nxh240b120h3q1pg-d.pdf
NXH240B120H3Q1PG
Hersteller: onsemi
Description: IGBT MOD 1200V 68A 158W 32-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
NTC Thermistor: Yes
Supplier Device Package: 32-PIM (71x37.4)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 158 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 18.151 nF @ 20 V
auf Bestellung 189 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+133.64 EUR
21+108.17 EUR
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NXH350N100H4Q2F2P1G nxh350n100h4q2f2p1g-d.pdf
NXH350N100H4Q2F2P1G
Hersteller: onsemi
Description: IGBT MOD 1000V 303A 276W 42-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 375A
NTC Thermistor: Yes
Supplier Device Package: 42-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 303 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 276 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 24.146 nF @ 20 V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+246.98 EUR
12+224.18 EUR
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NXH450B100H4Q2F2PG nxh450b100h4q2f2-d.pdf
NXH450B100H4Q2F2PG
Hersteller: onsemi
Description: IGBT MOD 1000V 101A 234W 56-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: 56-PIM (93x47)
Current - Collector (Ic) (Max): 101 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 234 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 9.342 nF @ 20 V
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+220.92 EUR
12+196.15 EUR
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NXH350N100H4Q2F2S1G nxh350n100h4q2f2p1g-d.pdf
NXH350N100H4Q2F2S1G
Hersteller: onsemi
Description: IGBT MOD 1000V 303A 276W 42-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 375A
NTC Thermistor: Yes
Supplier Device Package: 42-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 303 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 276 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 24.146 nF @ 20 V
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+252 EUR
12+229.53 EUR
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NXH300B100H4Q2F2SG-R nxh300b100h4q2f2-d.pdf
Hersteller: onsemi
Description: IGBT MOD 1000V 73A 194W 53-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: 53-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 73 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 194 W
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 6.323 nF @ 20 V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+346.56 EUR
12+331.87 EUR
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NXH450B100H4Q2F2PG-R nxh450b100h4q2f2-d.pdf
NXH450B100H4Q2F2PG-R
Hersteller: onsemi
Description: IGBT MOD 1000V 101A 234W 56-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: 56-PIM (93x47)
Current - Collector (Ic) (Max): 101 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 234 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 9.342 nF @ 20 V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+368.37 EUR
12+356.12 EUR
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NXH350N100H4Q2F2S1G-R nxh350n100h4q2f2p1g-d.pdf
NXH350N100H4Q2F2S1G-R
Hersteller: onsemi
Description: IGBT MOD 1000V 303A 592W 42-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 375A
NTC Thermistor: Yes
Supplier Device Package: 42-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 303 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 592 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 24.146 nF @ 20 V
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+386.41 EUR
12+377.17 EUR
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NXH400N100H4Q2F2SG nxh400n100h4q2f2-d.pdf
NXH400N100H4Q2F2SG
Hersteller: onsemi
Description: IGBT MOD 1000V 409A 959W 42-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: 42-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 409 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 959 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 26.093 nF @ 20 V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+312.7 EUR
12+295.23 EUR
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NXH400N100H4Q2F2PG nxh400n100h4q2f2-d.pdf
NXH400N100H4Q2F2PG
Hersteller: onsemi
Description: IGBT MOD 1000V 409A 959W 42-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: 42-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 409 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 959 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 26.093 nF @ 20 V
auf Bestellung 139 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+312.7 EUR
12+295.23 EUR
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NXH400N100H4Q2F2SG-R nxh400n100h4q2f2-d.pdf
NXH400N100H4Q2F2SG-R
Hersteller: onsemi
Description: IGBT MOD 1000V 409A 959W 42-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: 42-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 409 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 959 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 26.093 nF @ 20 V
auf Bestellung 37 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+458.2 EUR
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NCV8164CSN180T1G PdfFile168577.pdf
NCV8164CSN180T1G
Hersteller: onsemi
Description: IC REG LINEAR 1.8V 300MA 5-TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 5V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable, Power Good
Grade: Automotive
PSRR: 83dB ~ 61dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.255V @ 300mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
auf Bestellung 2405 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
29+0.62 EUR
32+0.56 EUR
100+0.48 EUR
250+0.45 EUR
500+0.43 EUR
1000+0.41 EUR
Mindestbestellmenge: 20
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NCV97311MW33AR2G ncv97311a-d.pdf
NCV97311MW33AR2G
Hersteller: onsemi
Description: IC PMU MULTI-OUTPUT 32QFNW
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Voltage - Output: 3.3V
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 3
Voltage - Input: 4.5V ~ 34V
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 32-QFNW (5x5)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+5.18 EUR
Mindestbestellmenge: 5000
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NCV97311MW33AR2G ncv97311a-d.pdf
NCV97311MW33AR2G
Hersteller: onsemi
Description: IC PMU MULTI-OUTPUT 32QFNW
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Voltage - Output: 3.3V
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 3
Voltage - Input: 4.5V ~ 34V
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 32-QFNW (5x5)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.96 EUR
10+9 EUR
25+8.58 EUR
100+7.11 EUR
250+6.49 EUR
500+6.07 EUR
1000+5.44 EUR
2500+5.23 EUR
Mindestbestellmenge: 2
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