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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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BGH75N65ZF1 | BASiC SEMICONDUCTOR |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Case: TO247-4 Mounting: THT Kind of package: tube Pulsed collector current: 300A Turn-on time: 84ns Turn-off time: 565ns Gate-emitter voltage: ±20V Collector current: 75A Collector-emitter voltage: 650V Power dissipation: 405W Gate charge: 444nC Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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BIDW75N65EH5 | Bourns |
IGBTs IGBT Discrete 650V, 75A, High speed switching in TO-247-3L |
auf Bestellung 5809 Stücke: Lieferzeit 10-14 Tag (e) |
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BIDW75N65ES5 | Bourns |
IGBTs IGBT Discrete 650V, 75A, Medium speed switching in TO-247-3L |
auf Bestellung 2783 Stücke: Lieferzeit 10-14 Tag (e) |
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CXG75N65HS | Createk Microelectronics |
Transistor IGBT ; 650V; 30V; 150A; 300A; 625W; 4,0V~5,5V; 340nC; -55°C~150°C; CXG75N65HS CREATEK TCXG75n65hs Anzahl je Verpackung: 5 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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DI7A5N65D2K | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 25A; 62.5W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: D2PAK; TO263AB On-state resistance: 0.43Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 25A Power dissipation: 62.5W Gate charge: 18.4nC Version: ESD Drain current: 4.7A |
auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
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FCH125N65S3R0-F155 | onsemi |
Description: MOSFET N-CH 650V 24A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 181W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.4mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V |
auf Bestellung 432 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH165N65S3R0-F155 | onsemi |
MOSFETs SF3 650V 165MOHM 19A |
auf Bestellung 414 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH165N65S3R0-F155 | onsemi |
Description: MOSFET N-CH 650V 19A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V Power Dissipation (Max): 154W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.9mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V |
auf Bestellung 304 Stücke: Lieferzeit 10-14 Tag (e) |
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FCMT125N65S3 | onsemi |
Description: MOSFET N-CH 650V 24A 4PQFN Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 181W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 590µA Supplier Device Package: 4-PQFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 400 V |
auf Bestellung 2389 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP125N65S3 | onsemi |
Description: MOSFET N-CH 650V 24A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 181W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.4mA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V |
auf Bestellung 7865 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP125N65S3 | onsemi |
MOSFETs SF3 650V 125MOHM E TO220 |
auf Bestellung 352 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP125N65S3R0 | onsemi |
MOSFETs SUPERFET3 650V 24A 125 mOhm |
auf Bestellung 1596 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP125N65S3R0 | onsemi |
Description: MOSFET N-CH 650V 24A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 181W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.4mA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V |
auf Bestellung 770 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP165N65S3 | onsemi |
MOSFETs SUPERFET3 650V 19A 165 mOhm |
auf Bestellung 801 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF125N65S3 | onsemi |
Description: MOSFET N-CH 650V 24A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.4mA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 400 V |
auf Bestellung 399 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF165N65S3L1-F154 | onsemi |
MOSFETs SF3 650V 165MOHM E TO220F |
auf Bestellung 581 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF165N65S3L1-F154 | onsemi |
Description: SF3 650V 165MOHM E TO220F Packaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tj) Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 410µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V |
auf Bestellung 813 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPF15N65 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 9.5A; Idm: 60A; 38.5W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: TO220FP On-state resistance: 440mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 60A Power dissipation: 38.5W Gate charge: 63nC Drain current: 9.5A |
auf Bestellung 235 Stücke: Lieferzeit 14-21 Tag (e) |
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FDPF15N65 | onsemi | MOSFETs 650V 15A 0.44OHMS NCH POWER TRENCH |
auf Bestellung 3672 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDPF15N65 | onsemi |
Description: MOSFET N-CH 650V 15A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 440mOhm @ 7.5A, 10V Power Dissipation (Max): 38.5W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3095 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 1043 Stücke: Lieferzeit 10-14 Tag (e) |
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GC125N65FF | GOFORD SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 25A; 42W; TO220F Type of transistor: N-MOSFET Technology: SJ-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: TO220F Mounting: THT Kind of channel: enhancement Gate-source voltage: ±30V Power dissipation: 42W Gate charge: 52nC Drain current: 25A |
auf Bestellung 925 Stücke: Lieferzeit 14-21 Tag (e) |
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IGB15N65S5ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 35A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A Supplier Device Package: PG-TO263-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 12ns/117ns Switching Energy: 250µJ (on), 140µJ (off) Test Condition: 400V, 15A, 25Ohm, 15V Gate Charge: 38 nC Part Status: Active Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 105 W |
auf Bestellung 943 Stücke: Lieferzeit 10-14 Tag (e) |
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IGW75N65H5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH 650V 120A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Td (on/off) @ 25°C: 28ns/174ns Switching Energy: 2.25mJ (on), 950µJ (off) Test Condition: 400V, 75A, 8Ohm, 15V Gate Charge: 160 nC Part Status: Active Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 395 W |
auf Bestellung 277 Stücke: Lieferzeit 10-14 Tag (e) |
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IKA15N65F5 | Infineon Technologies |
IGBTs ENGINEERING SAMPLES TRENCHSTOP-5 IGBT |
auf Bestellung 302 Stücke: Lieferzeit 10-14 Tag (e) |
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IKA15N65F5XKSA1 | Infineon Technologies |
Description: IGBT 650V 14A TO220-FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: PG-TO220-FP Td (on/off) @ 25°C: 17ns/150ns Switching Energy: 130µJ (on), 40µJ (off) Test Condition: 400V, 7.5A, 39Ohm, 15V Gate Charge: 38 nC Part Status: Active Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 33.3 W |
auf Bestellung 505 Stücke: Lieferzeit 10-14 Tag (e) |
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IKB15N65EH5ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 30A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 16ns/145ns Switching Energy: 400µJ (on), 80µJ (off) Test Condition: 400V, 15A, 39Ohm, 15V Gate Charge: 38 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 105 W |
auf Bestellung 603 Stücke: Lieferzeit 10-14 Tag (e) |
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IKFW75N65EH5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 80A HSIP247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 75 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A Supplier Device Package: PG-HSIP247-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/206ns Switching Energy: 1.8mJ (on), 600µJ (off) Test Condition: 400V, 60A, 12Ohm, 15V Gate Charge: 144 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 240 A Power - Max: 148 W |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW75N65EH5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH 650V 90A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 92 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Td (on/off) @ 25°C: 28ns/174ns Switching Energy: 2.3mJ (on), 900µJ (off) Test Condition: 400V, 75A, 8Ohm, 15V Gate Charge: 160 nC Part Status: Active Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 395 W |
auf Bestellung 1290 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW75N65EL5XKSA1 | Infineon Technologies |
Description: IGBT 650V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 114 ns Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 40ns/275ns Switching Energy: 1.61mJ (on), 3.2mJ (off) Test Condition: 400V, 75A, 4Ohm, 15V Gate Charge: 436 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 536 W |
auf Bestellung 332 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW75N65ES5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 197W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Case: TO247-3 Mounting: THT Kind of package: tube Pulsed collector current: 300A Turn-on time: 86ns Turn-off time: 185ns Gate-emitter voltage: ±20V Collector current: 80A Collector-emitter voltage: 650V Power dissipation: 197W Gate charge: 164nC Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW75N65ES5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH 650V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 85 ns Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 75A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Td (on/off) @ 25°C: 40ns/144ns Switching Energy: 2.4mJ (on), 950µJ (off) Test Condition: 400V, 75A, 18Ohm, 15V Gate Charge: 164 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 395 W |
auf Bestellung 1167 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW75N65RH5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 26ns/180ns Switching Energy: 360µJ (on), 300µJ (off) Test Condition: 400V, 37.5A, 9Ohm, 15V Gate Charge: 168 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 395 W |
auf Bestellung 347 Stücke: Lieferzeit 10-14 Tag (e) |
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IKZ75N65EH5XKSA1 | Infineon Technologies |
Description: IGBT 650V 90A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: PG-TO247-4 Td (on/off) @ 25°C: 26ns/347ns Switching Energy: 680µJ (on), 430µJ (off) Test Condition: 400V, 37.5A, 10Ohm, 15V Gate Charge: 166 nC Part Status: Active Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 395 W |
auf Bestellung 210 Stücke: Lieferzeit 10-14 Tag (e) |
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IKZ75N65EL5XKSA1 | Infineon Technologies |
Description: IGBT 650V 100A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 59 ns Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A Supplier Device Package: PG-TO247-4 Td (on/off) @ 25°C: 120ns/275ns Switching Energy: 1.57mJ (on), 3.2mJ (off) Test Condition: 400V, 75A, 23Ohm, 15V Gate Charge: 436 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 536 W |
auf Bestellung 196 Stücke: Lieferzeit 10-14 Tag (e) |
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IKZ75N65EL5XKSA1 | Infineon Technologies |
IGBTs IGBT PRODUCTS |
auf Bestellung 1055 Stücke: Lieferzeit 10-14 Tag (e) |
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IKZA75N65RH5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 80A TO247-4 Packaging: Bulk Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: PG-TO247-4-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 25ns/180ns Switching Energy: 310µJ (on), 300µJ (off) Test Condition: 400V, 37.5A, 9Ohm, 15V Gate Charge: 168 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 395 W |
auf Bestellung 2896 Stücke: Lieferzeit 10-14 Tag (e) |
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IKZA75N65RH5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 80A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: PG-TO247-4-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 25ns/180ns Switching Energy: 310µJ (on), 300µJ (off) Test Condition: 400V, 37.5A, 9Ohm, 15V Gate Charge: 168 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 395 W |
auf Bestellung 19 Stücke: Lieferzeit 10-14 Tag (e) |
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IKZA75N65SS5XKSA1 | Infineon Technologies |
IGBTs 650 V, 75 A IGBT Discrete with Silicon Carbide Schottky diode |
auf Bestellung 376 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYA15N65C3D1 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Case: TO263 Mounting: SMD Kind of package: tube Pulsed collector current: 80A Turn-on time: 36ns Turn-off time: 102ns Gate-emitter voltage: ±20V Collector current: 15A Collector-emitter voltage: 650V Power dissipation: 200W Gate charge: 19nC |
auf Bestellung 179 Stücke: Lieferzeit 14-21 Tag (e) |
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IXYA55N65B5 | IXYS |
IGBTs 650V, 55A, XPT Gen5 B5 IGBT in TO-263 |
auf Bestellung 77 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYH75N65C3H1 | IXYS |
IGBTs 650V/170A XPT C3-Class TO-247 |
auf Bestellung 172 Stücke: Lieferzeit 10-14 Tag (e) |
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LGEGB15N65T2 | LUGUANG ELECTRONIC |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 15A; 125W; TO263 Type of transistor: IGBT Case: TO263 Mounting: SMD Kind of package: reel; tape Pulsed collector current: 60A Turn-on time: 40ns Turn-off time: 150ns Gate-emitter voltage: ±20V Collector current: 15A Collector-emitter voltage: 650V Power dissipation: 125W Gate charge: 45nC Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 603 Stücke: Lieferzeit 14-21 Tag (e) |
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LGEGF15N65T2 | LUGUANG ELECTRONIC |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP Type of transistor: IGBT Case: TO220FP Mounting: THT Kind of package: tube Pulsed collector current: 60A Turn-on time: 40ns Turn-off time: 150ns Gate-emitter voltage: ±20V Collector current: 15A Collector-emitter voltage: 650V Power dissipation: 30.6W Gate charge: 45nC Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
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LGEGP15N65T2 | LUGUANG ELECTRONIC |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 15A; 125W; TO220 Type of transistor: IGBT Case: TO220 Mounting: THT Kind of package: tube Pulsed collector current: 60A Turn-on time: 40ns Turn-off time: 150ns Gate-emitter voltage: ±20V Collector current: 15A Collector-emitter voltage: 650V Power dissipation: 125W Gate charge: 45nC Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 154 Stücke: Lieferzeit 14-21 Tag (e) |
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LGEGW75N65F | LUGUANG ELECTRONIC |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 71W; TO247 Type of transistor: IGBT Case: TO247 Mounting: THT Kind of package: tube Pulsed collector current: 300A Turn-on time: 161ns Turn-off time: 274ns Gate-emitter voltage: ±30V Collector current: 75A Collector-emitter voltage: 650V Power dissipation: 71W Gate charge: 192nC Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 115 Stücke: Lieferzeit 14-21 Tag (e) |
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LGEGW75N65FP | LUGUANG ELECTRONIC |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 500W; TO247 Type of transistor: IGBT Case: TO247 Mounting: THT Kind of package: tube Pulsed collector current: 225A Turn-on time: 215ns Turn-off time: 225ns Gate-emitter voltage: ±20V Collector current: 75A Collector-emitter voltage: 650V Power dissipation: 500W Gate charge: 130nC Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 317 Stücke: Lieferzeit 14-21 Tag (e) |
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LGEGW75N65S | LUGUANG ELECTRONIC |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 250W; TO247 Type of transistor: IGBT Case: TO247 Mounting: THT Kind of package: tube Pulsed collector current: 300A Turn-on time: 156ns Turn-off time: 348ns Gate-emitter voltage: ±30V Collector current: 75A Collector-emitter voltage: 650V Power dissipation: 250W Gate charge: 340nC Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 58 Stücke: Lieferzeit 14-21 Tag (e) |
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NGTB35N65FL2WG | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 35A; 150W; TO247-3 Type of transistor: IGBT Case: TO247-3 Mounting: THT Kind of package: tube Pulsed collector current: 120A Gate-emitter voltage: ±20V Collector current: 35A Collector-emitter voltage: 650V Power dissipation: 150W Gate charge: 125nC |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
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NGTB75N65FL2WG | onsemi |
Description: IGBT TRENCH FS 650V 100A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 80 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 110ns/270ns Switching Energy: 1.5mJ (on), 1mJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 310 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 595 W |
auf Bestellung 320 Stücke: Lieferzeit 10-14 Tag (e) |
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NTB095N65S3HF | onsemi |
MOSFETs SUPERFET3 650V FRFET 95MO |
auf Bestellung 773 Stücke: Lieferzeit 10-14 Tag (e) |
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NTB095N65S3HF | onsemi |
Description: MOSFET N-CH 650V 36A D2PAK-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 5V @ 860µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V |
auf Bestellung 770 Stücke: Lieferzeit 10-14 Tag (e) |
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NTH4LN095N65S3H | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFE Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.8mA Supplier Device Package: TO-247-4 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V |
auf Bestellung 3125 Stücke: Lieferzeit 10-14 Tag (e) |
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NTH4LN095N65S3H | onsemi |
MOSFETs SUPERFET3 FAST 95MOHM TO-247-4 |
auf Bestellung 440 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHL065N65S3F | onsemi |
Description: MOSFET N-CH 650V 46A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 10V Power Dissipation (Max): 337W (Tc) Vgs(th) (Max) @ Id: 5V @ 4.6mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 400 V |
auf Bestellung 3600 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHL065N65S3F | onsemi |
MOSFETs SUPERFET3 650V TO247 |
auf Bestellung 395 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHL065N65S3HF | onsemi |
MOSFETs SF3 FRFET HF VERSION 65MOHM TO-247 |
auf Bestellung 446 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHL095N65S3H | onsemi |
MOSFETs SUPERFET3 FAST 95MOHM TO-247-3 |
auf Bestellung 214 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHL095N65S3HF | onsemi |
MOSFETs SUPERFET3 650V FRFET 95MO |
auf Bestellung 853 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHL095N65S3HF | onsemi |
Description: MOSFET N-CH 650V 36A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 5V @ 860µA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V |
auf Bestellung 1050 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHL125N65S3H | onsemi |
MOSFETs SUPERFET3 FAST 125MOHM TO-247-3 |
auf Bestellung 349 Stücke: Lieferzeit 10-14 Tag (e) |
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| BGH75N65ZF1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-4
Mounting: THT
Kind of package: tube
Pulsed collector current: 300A
Turn-on time: 84ns
Turn-off time: 565ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 650V
Power dissipation: 405W
Gate charge: 444nC
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-4
Mounting: THT
Kind of package: tube
Pulsed collector current: 300A
Turn-on time: 84ns
Turn-off time: 565ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 650V
Power dissipation: 405W
Gate charge: 444nC
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 17.3 EUR |
| BIDW75N65EH5 |
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Hersteller: Bourns
IGBTs IGBT Discrete 650V, 75A, High speed switching in TO-247-3L
IGBTs IGBT Discrete 650V, 75A, High speed switching in TO-247-3L
auf Bestellung 5809 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 14.68 EUR |
| 10+ | 8.51 EUR |
| 100+ | 7.14 EUR |
| 600+ | 6.78 EUR |
| BIDW75N65ES5 |
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Hersteller: Bourns
IGBTs IGBT Discrete 650V, 75A, Medium speed switching in TO-247-3L
IGBTs IGBT Discrete 650V, 75A, Medium speed switching in TO-247-3L
auf Bestellung 2783 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 14.68 EUR |
| 10+ | 8.51 EUR |
| 100+ | 7.14 EUR |
| 600+ | 6.78 EUR |
| CXG75N65HS |
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Hersteller: Createk Microelectronics
Transistor IGBT ; 650V; 30V; 150A; 300A; 625W; 4,0V~5,5V; 340nC; -55°C~150°C; CXG75N65HS CREATEK TCXG75n65hs
Anzahl je Verpackung: 5 Stücke
Transistor IGBT ; 650V; 30V; 150A; 300A; 625W; 4,0V~5,5V; 340nC; -55°C~150°C; CXG75N65HS CREATEK TCXG75n65hs
Anzahl je Verpackung: 5 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 9.42 EUR |
| DI7A5N65D2K |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 25A; 62.5W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: D2PAK; TO263AB
On-state resistance: 0.43Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 25A
Power dissipation: 62.5W
Gate charge: 18.4nC
Version: ESD
Drain current: 4.7A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 25A; 62.5W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: D2PAK; TO263AB
On-state resistance: 0.43Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 25A
Power dissipation: 62.5W
Gate charge: 18.4nC
Version: ESD
Drain current: 4.7A
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 39+ | 2.18 EUR |
| FCH125N65S3R0-F155 |
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Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
Description: MOSFET N-CH 650V 24A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 432 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.18 EUR |
| 30+ | 8.21 EUR |
| 120+ | 6.89 EUR |
| FCH165N65S3R0-F155 |
|
Hersteller: onsemi
MOSFETs SF3 650V 165MOHM 19A
MOSFETs SF3 650V 165MOHM 19A
auf Bestellung 414 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 14.6 EUR |
| 10+ | 9.78 EUR |
| 120+ | 7.85 EUR |
| 510+ | 6.97 EUR |
| 1020+ | 6.18 EUR |
| FCH165N65S3R0-F155 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 19A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Description: MOSFET N-CH 650V 19A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 304 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.28 EUR |
| 10+ | 8.98 EUR |
| FCMT125N65S3 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A 4PQFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 590µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 400 V
Description: MOSFET N-CH 650V 24A 4PQFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 590µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 400 V
auf Bestellung 2389 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.92 EUR |
| 10+ | 9.41 EUR |
| 100+ | 6.85 EUR |
| 500+ | 6.57 EUR |
| FCP125N65S3 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 7865 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.61 EUR |
| 50+ | 5.58 EUR |
| 100+ | 5.11 EUR |
| 500+ | 4.25 EUR |
| 1000+ | 4.08 EUR |
| FCP125N65S3 |
|
Hersteller: onsemi
MOSFETs SF3 650V 125MOHM E TO220
MOSFETs SF3 650V 125MOHM E TO220
auf Bestellung 352 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.09 EUR |
| 10+ | 7.91 EUR |
| 100+ | 5.82 EUR |
| 500+ | 5.18 EUR |
| 1000+ | 4.63 EUR |
| FCP125N65S3R0 |
|
Hersteller: onsemi
MOSFETs SUPERFET3 650V 24A 125 mOhm
MOSFETs SUPERFET3 650V 24A 125 mOhm
auf Bestellung 1596 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.77 EUR |
| 10+ | 7.72 EUR |
| 100+ | 5.68 EUR |
| 500+ | 5.05 EUR |
| 1000+ | 4.52 EUR |
| FCP125N65S3R0 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 770 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.41 EUR |
| 50+ | 5.47 EUR |
| 100+ | 5 EUR |
| 500+ | 4.15 EUR |
| FCP165N65S3 |
|
Hersteller: onsemi
MOSFETs SUPERFET3 650V 19A 165 mOhm
MOSFETs SUPERFET3 650V 19A 165 mOhm
auf Bestellung 801 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.31 EUR |
| 10+ | 6.76 EUR |
| 100+ | 4.96 EUR |
| 500+ | 4.41 EUR |
| 1000+ | 3.92 EUR |
| FCPF125N65S3 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 400 V
Description: MOSFET N-CH 650V 24A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 400 V
auf Bestellung 399 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.5 EUR |
| 50+ | 6.09 EUR |
| 100+ | 5.58 EUR |
| FCPF165N65S3L1-F154 |
|
Hersteller: onsemi
MOSFETs SF3 650V 165MOHM E TO220F
MOSFETs SF3 650V 165MOHM E TO220F
auf Bestellung 581 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.34 EUR |
| 10+ | 6.76 EUR |
| 100+ | 4.99 EUR |
| 500+ | 4.44 EUR |
| 1000+ | 3.92 EUR |
| FCPF165N65S3L1-F154 |
|
Hersteller: onsemi
Description: SF3 650V 165MOHM E TO220F
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tj)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 410µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
Description: SF3 650V 165MOHM E TO220F
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tj)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 410µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
auf Bestellung 813 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.12 EUR |
| 10+ | 6.72 EUR |
| 100+ | 4.8 EUR |
| 500+ | 4.28 EUR |
| FDPF15N65 |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.5A; Idm: 60A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220FP
On-state resistance: 440mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 60A
Power dissipation: 38.5W
Gate charge: 63nC
Drain current: 9.5A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.5A; Idm: 60A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220FP
On-state resistance: 440mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 60A
Power dissipation: 38.5W
Gate charge: 63nC
Drain current: 9.5A
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 4.75 EUR |
| 28+ | 3.05 EUR |
| 50+ | 2.68 EUR |
| 100+ | 2.55 EUR |
| FDPF15N65 |
Hersteller: onsemi
MOSFETs 650V 15A 0.44OHMS NCH POWER TRENCH
MOSFETs 650V 15A 0.44OHMS NCH POWER TRENCH
auf Bestellung 3672 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.07 EUR |
| 10+ | 5.28 EUR |
| FDPF15N65 |
Hersteller: onsemi
Description: MOSFET N-CH 650V 15A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 7.5A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3095 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 650V 15A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 7.5A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3095 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 1043 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.47 EUR |
| 50+ | 3.81 EUR |
| 100+ | 3.45 EUR |
| 500+ | 2.83 EUR |
| 1000+ | 2.63 EUR |
| GC125N65FF |
|
Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 25A; 42W; TO220F
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±30V
Power dissipation: 42W
Gate charge: 52nC
Drain current: 25A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 25A; 42W; TO220F
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±30V
Power dissipation: 42W
Gate charge: 52nC
Drain current: 25A
auf Bestellung 925 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 29+ | 2.94 EUR |
| 33+ | 2.65 EUR |
| 50+ | 2.34 EUR |
| 200+ | 2.18 EUR |
| 500+ | 2.02 EUR |
| IGB15N65S5ATMA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 35A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/117ns
Switching Energy: 250µJ (on), 140µJ (off)
Test Condition: 400V, 15A, 25Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 105 W
Description: IGBT TRENCH FS 650V 35A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/117ns
Switching Energy: 250µJ (on), 140µJ (off)
Test Condition: 400V, 15A, 25Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 105 W
auf Bestellung 943 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4.16 EUR |
| 10+ | 2.67 EUR |
| 100+ | 1.81 EUR |
| 500+ | 1.44 EUR |
| IGW75N65H5XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 120A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 28ns/174ns
Switching Energy: 2.25mJ (on), 950µJ (off)
Test Condition: 400V, 75A, 8Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
Description: IGBT TRENCH 650V 120A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 28ns/174ns
Switching Energy: 2.25mJ (on), 950µJ (off)
Test Condition: 400V, 75A, 8Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 277 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.45 EUR |
| 30+ | 5.87 EUR |
| 120+ | 4.87 EUR |
| IKA15N65F5 |
|
Hersteller: Infineon Technologies
IGBTs ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
IGBTs ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
auf Bestellung 302 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.7 EUR |
| 10+ | 3.67 EUR |
| 100+ | 2.51 EUR |
| 500+ | 2.03 EUR |
| 1000+ | 1.89 EUR |
| 2500+ | 1.82 EUR |
| 5000+ | 1.78 EUR |
| IKA15N65F5XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT 650V 14A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO220-FP
Td (on/off) @ 25°C: 17ns/150ns
Switching Energy: 130µJ (on), 40µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 33.3 W
Description: IGBT 650V 14A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO220-FP
Td (on/off) @ 25°C: 17ns/150ns
Switching Energy: 130µJ (on), 40µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 33.3 W
auf Bestellung 505 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.57 EUR |
| 50+ | 2.76 EUR |
| 100+ | 2.49 EUR |
| 500+ | 2.01 EUR |
| IKB15N65EH5ATMA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 30A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/145ns
Switching Energy: 400µJ (on), 80µJ (off)
Test Condition: 400V, 15A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
Description: IGBT TRENCH FS 650V 30A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/145ns
Switching Energy: 400µJ (on), 80µJ (off)
Test Condition: 400V, 15A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
auf Bestellung 603 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.24 EUR |
| 10+ | 4.06 EUR |
| 100+ | 2.81 EUR |
| 500+ | 2.28 EUR |
| IKFW75N65EH5XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/206ns
Switching Energy: 1.8mJ (on), 600µJ (off)
Test Condition: 400V, 60A, 12Ohm, 15V
Gate Charge: 144 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 148 W
Description: IGBT TRENCH FS 650V 80A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/206ns
Switching Energy: 1.8mJ (on), 600µJ (off)
Test Condition: 400V, 60A, 12Ohm, 15V
Gate Charge: 144 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 148 W
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 19.85 EUR |
| 30+ | 11.77 EUR |
| 120+ | 10 EUR |
| IKW75N65EH5XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 90A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 28ns/174ns
Switching Energy: 2.3mJ (on), 900µJ (off)
Test Condition: 400V, 75A, 8Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
Description: IGBT TRENCH 650V 90A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 28ns/174ns
Switching Energy: 2.3mJ (on), 900µJ (off)
Test Condition: 400V, 75A, 8Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 1290 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.07 EUR |
| 30+ | 7.49 EUR |
| 120+ | 6.26 EUR |
| 510+ | 5.36 EUR |
| 1020+ | 5.02 EUR |
| IKW75N65EL5XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 40ns/275ns
Switching Energy: 1.61mJ (on), 3.2mJ (off)
Test Condition: 400V, 75A, 4Ohm, 15V
Gate Charge: 436 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 536 W
Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 40ns/275ns
Switching Energy: 1.61mJ (on), 3.2mJ (off)
Test Condition: 400V, 75A, 4Ohm, 15V
Gate Charge: 436 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 536 W
auf Bestellung 332 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.52 EUR |
| 30+ | 8.39 EUR |
| 120+ | 7.03 EUR |
| IKW75N65ES5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 300A
Turn-on time: 86ns
Turn-off time: 185ns
Gate-emitter voltage: ±20V
Collector current: 80A
Collector-emitter voltage: 650V
Power dissipation: 197W
Gate charge: 164nC
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 300A
Turn-on time: 86ns
Turn-off time: 185ns
Gate-emitter voltage: ±20V
Collector current: 80A
Collector-emitter voltage: 650V
Power dissipation: 197W
Gate charge: 164nC
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 6.38 EUR |
| 15+ | 5.66 EUR |
| IKW75N65ES5XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 85 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 40ns/144ns
Switching Energy: 2.4mJ (on), 950µJ (off)
Test Condition: 400V, 75A, 18Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 85 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 40ns/144ns
Switching Energy: 2.4mJ (on), 950µJ (off)
Test Condition: 400V, 75A, 18Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 1167 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.36 EUR |
| 30+ | 7.66 EUR |
| 120+ | 6.41 EUR |
| 510+ | 5.5 EUR |
| 1020+ | 5.16 EUR |
| IKW75N65RH5XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/180ns
Switching Energy: 360µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/180ns
Switching Energy: 360µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 347 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.58 EUR |
| 30+ | 10.29 EUR |
| 120+ | 8.7 EUR |
| IKZ75N65EH5XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT 650V 90A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4
Td (on/off) @ 25°C: 26ns/347ns
Switching Energy: 680µJ (on), 430µJ (off)
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 166 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
Description: IGBT 650V 90A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4
Td (on/off) @ 25°C: 26ns/347ns
Switching Energy: 680µJ (on), 430µJ (off)
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 166 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.78 EUR |
| 30+ | 7.93 EUR |
| 120+ | 6.64 EUR |
| IKZ75N65EL5XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT 650V 100A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
Supplier Device Package: PG-TO247-4
Td (on/off) @ 25°C: 120ns/275ns
Switching Energy: 1.57mJ (on), 3.2mJ (off)
Test Condition: 400V, 75A, 23Ohm, 15V
Gate Charge: 436 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 536 W
Description: IGBT 650V 100A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
Supplier Device Package: PG-TO247-4
Td (on/off) @ 25°C: 120ns/275ns
Switching Energy: 1.57mJ (on), 3.2mJ (off)
Test Condition: 400V, 75A, 23Ohm, 15V
Gate Charge: 436 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 536 W
auf Bestellung 196 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.23 EUR |
| 30+ | 8.82 EUR |
| 120+ | 7.41 EUR |
| IKZ75N65EL5XKSA1 |
|
Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS
IGBTs IGBT PRODUCTS
auf Bestellung 1055 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 15.29 EUR |
| 10+ | 10.77 EUR |
| 100+ | 8.69 EUR |
| 480+ | 7.75 EUR |
| 1200+ | 6.87 EUR |
| IKZA75N65RH5XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 310µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 310µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 2896 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 52+ | 10.65 EUR |
| IKZA75N65RH5XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 310µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 310µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.8 EUR |
| IKZA75N65SS5XKSA1 |
|
Hersteller: Infineon Technologies
IGBTs 650 V, 75 A IGBT Discrete with Silicon Carbide Schottky diode
IGBTs 650 V, 75 A IGBT Discrete with Silicon Carbide Schottky diode
auf Bestellung 376 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.16 EUR |
| 10+ | 17.5 EUR |
| 100+ | 14.47 EUR |
| 480+ | 13.45 EUR |
| IXYA15N65C3D1 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Case: TO263
Mounting: SMD
Kind of package: tube
Pulsed collector current: 80A
Turn-on time: 36ns
Turn-off time: 102ns
Gate-emitter voltage: ±20V
Collector current: 15A
Collector-emitter voltage: 650V
Power dissipation: 200W
Gate charge: 19nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Case: TO263
Mounting: SMD
Kind of package: tube
Pulsed collector current: 80A
Turn-on time: 36ns
Turn-off time: 102ns
Gate-emitter voltage: ±20V
Collector current: 15A
Collector-emitter voltage: 650V
Power dissipation: 200W
Gate charge: 19nC
auf Bestellung 179 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 3.8 EUR |
| 25+ | 3.44 EUR |
| 29+ | 3.01 EUR |
| 50+ | 2.73 EUR |
| IXYA55N65B5 |
|
Hersteller: IXYS
IGBTs 650V, 55A, XPT Gen5 B5 IGBT in TO-263
IGBTs 650V, 55A, XPT Gen5 B5 IGBT in TO-263
auf Bestellung 77 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 14.99 EUR |
| 10+ | 9.56 EUR |
| 100+ | 7.27 EUR |
| 500+ | 6.81 EUR |
| IXYH75N65C3H1 |
|
Hersteller: IXYS
IGBTs 650V/170A XPT C3-Class TO-247
IGBTs 650V/170A XPT C3-Class TO-247
auf Bestellung 172 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 38.56 EUR |
| 10+ | 27.48 EUR |
| 120+ | 23.87 EUR |
| 510+ | 22.35 EUR |
| LGEGB15N65T2 |
|
Hersteller: LUGUANG ELECTRONIC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 60A
Turn-on time: 40ns
Turn-off time: 150ns
Gate-emitter voltage: ±20V
Collector current: 15A
Collector-emitter voltage: 650V
Power dissipation: 125W
Gate charge: 45nC
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 60A
Turn-on time: 40ns
Turn-off time: 150ns
Gate-emitter voltage: ±20V
Collector current: 15A
Collector-emitter voltage: 650V
Power dissipation: 125W
Gate charge: 45nC
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 603 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 88+ | 0.98 EUR |
| 99+ | 0.87 EUR |
| 111+ | 0.77 EUR |
| 120+ | 0.71 EUR |
| 400+ | 0.67 EUR |
| LGEGF15N65T2 |
|
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP
Type of transistor: IGBT
Case: TO220FP
Mounting: THT
Kind of package: tube
Pulsed collector current: 60A
Turn-on time: 40ns
Turn-off time: 150ns
Gate-emitter voltage: ±20V
Collector current: 15A
Collector-emitter voltage: 650V
Power dissipation: 30.6W
Gate charge: 45nC
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP
Type of transistor: IGBT
Case: TO220FP
Mounting: THT
Kind of package: tube
Pulsed collector current: 60A
Turn-on time: 40ns
Turn-off time: 150ns
Gate-emitter voltage: ±20V
Collector current: 15A
Collector-emitter voltage: 650V
Power dissipation: 30.6W
Gate charge: 45nC
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 44+ | 1.94 EUR |
| LGEGP15N65T2 |
|
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO220
Type of transistor: IGBT
Case: TO220
Mounting: THT
Kind of package: tube
Pulsed collector current: 60A
Turn-on time: 40ns
Turn-off time: 150ns
Gate-emitter voltage: ±20V
Collector current: 15A
Collector-emitter voltage: 650V
Power dissipation: 125W
Gate charge: 45nC
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO220
Type of transistor: IGBT
Case: TO220
Mounting: THT
Kind of package: tube
Pulsed collector current: 60A
Turn-on time: 40ns
Turn-off time: 150ns
Gate-emitter voltage: ±20V
Collector current: 15A
Collector-emitter voltage: 650V
Power dissipation: 125W
Gate charge: 45nC
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 154 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 88+ | 0.98 EUR |
| 99+ | 0.87 EUR |
| 111+ | 0.77 EUR |
| 120+ | 0.71 EUR |
| LGEGW75N65F |
|
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 71W; TO247
Type of transistor: IGBT
Case: TO247
Mounting: THT
Kind of package: tube
Pulsed collector current: 300A
Turn-on time: 161ns
Turn-off time: 274ns
Gate-emitter voltage: ±30V
Collector current: 75A
Collector-emitter voltage: 650V
Power dissipation: 71W
Gate charge: 192nC
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 71W; TO247
Type of transistor: IGBT
Case: TO247
Mounting: THT
Kind of package: tube
Pulsed collector current: 300A
Turn-on time: 161ns
Turn-off time: 274ns
Gate-emitter voltage: ±30V
Collector current: 75A
Collector-emitter voltage: 650V
Power dissipation: 71W
Gate charge: 192nC
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 5.43 EUR |
| 18+ | 4.9 EUR |
| 20+ | 4.32 EUR |
| 30+ | 4.03 EUR |
| LGEGW75N65FP |
|
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 500W; TO247
Type of transistor: IGBT
Case: TO247
Mounting: THT
Kind of package: tube
Pulsed collector current: 225A
Turn-on time: 215ns
Turn-off time: 225ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 650V
Power dissipation: 500W
Gate charge: 130nC
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 500W; TO247
Type of transistor: IGBT
Case: TO247
Mounting: THT
Kind of package: tube
Pulsed collector current: 225A
Turn-on time: 215ns
Turn-off time: 225ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 650V
Power dissipation: 500W
Gate charge: 130nC
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 317 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 5.58 EUR |
| 17+ | 5.03 EUR |
| 20+ | 4.44 EUR |
| 30+ | 4.13 EUR |
| 120+ | 3.87 EUR |
| 240+ | 3.75 EUR |
| LGEGW75N65S |
|
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 250W; TO247
Type of transistor: IGBT
Case: TO247
Mounting: THT
Kind of package: tube
Pulsed collector current: 300A
Turn-on time: 156ns
Turn-off time: 348ns
Gate-emitter voltage: ±30V
Collector current: 75A
Collector-emitter voltage: 650V
Power dissipation: 250W
Gate charge: 340nC
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 250W; TO247
Type of transistor: IGBT
Case: TO247
Mounting: THT
Kind of package: tube
Pulsed collector current: 300A
Turn-on time: 156ns
Turn-off time: 348ns
Gate-emitter voltage: ±30V
Collector current: 75A
Collector-emitter voltage: 650V
Power dissipation: 250W
Gate charge: 340nC
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 5.43 EUR |
| 18+ | 4.9 EUR |
| 20+ | 4.32 EUR |
| 30+ | 4.03 EUR |
| NGTB35N65FL2WG |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 150W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector current: 35A
Collector-emitter voltage: 650V
Power dissipation: 150W
Gate charge: 125nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 150W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector current: 35A
Collector-emitter voltage: 650V
Power dissipation: 150W
Gate charge: 125nC
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 8.34 EUR |
| 13+ | 6.77 EUR |
| 20+ | 5.66 EUR |
| NGTB75N65FL2WG |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 110ns/270ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 595 W
Description: IGBT TRENCH FS 650V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 110ns/270ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 595 W
auf Bestellung 320 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.18 EUR |
| 30+ | 10.73 EUR |
| 120+ | 9.1 EUR |
| NTB095N65S3HF |
|
Hersteller: onsemi
MOSFETs SUPERFET3 650V FRFET 95MO
MOSFETs SUPERFET3 650V FRFET 95MO
auf Bestellung 773 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 16.67 EUR |
| 10+ | 11.75 EUR |
| 100+ | 9.51 EUR |
| 500+ | 8.44 EUR |
| 800+ | 7.47 EUR |
| NTB095N65S3HF |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 36A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V
Description: MOSFET N-CH 650V 36A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V
auf Bestellung 770 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.4 EUR |
| 10+ | 11.16 EUR |
| 100+ | 8.21 EUR |
| NTH4LN095N65S3H |
|
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.8mA
Supplier Device Package: TO-247-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.8mA
Supplier Device Package: TO-247-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V
auf Bestellung 3125 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.35 EUR |
| 30+ | 10.84 EUR |
| 120+ | 9.2 EUR |
| 510+ | 8.43 EUR |
| NTH4LN095N65S3H |
|
Hersteller: onsemi
MOSFETs SUPERFET3 FAST 95MOHM TO-247-4
MOSFETs SUPERFET3 FAST 95MOHM TO-247-4
auf Bestellung 440 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 19.29 EUR |
| 10+ | 13.64 EUR |
| 120+ | 11.35 EUR |
| 510+ | 10.12 EUR |
| 1020+ | 9.47 EUR |
| NTHL065N65S3F |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 10V
Power Dissipation (Max): 337W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4.6mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 400 V
Description: MOSFET N-CH 650V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 10V
Power Dissipation (Max): 337W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4.6mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 400 V
auf Bestellung 3600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.95 EUR |
| 30+ | 14.49 EUR |
| 120+ | 12.42 EUR |
| 510+ | 11.96 EUR |
| NTHL065N65S3F |
|
Hersteller: onsemi
MOSFETs SUPERFET3 650V TO247
MOSFETs SUPERFET3 650V TO247
auf Bestellung 395 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.38 EUR |
| 10+ | 19.33 EUR |
| 120+ | 16.1 EUR |
| 510+ | 14.35 EUR |
| 1020+ | 13.42 EUR |
| NTHL065N65S3HF |
|
Hersteller: onsemi
MOSFETs SF3 FRFET HF VERSION 65MOHM TO-247
MOSFETs SF3 FRFET HF VERSION 65MOHM TO-247
auf Bestellung 446 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 27.1 EUR |
| 10+ | 20.65 EUR |
| 120+ | 17.2 EUR |
| 510+ | 15.33 EUR |
| 1020+ | 14.35 EUR |
| NTHL095N65S3H |
|
Hersteller: onsemi
MOSFETs SUPERFET3 FAST 95MOHM TO-247-3
MOSFETs SUPERFET3 FAST 95MOHM TO-247-3
auf Bestellung 214 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 18.68 EUR |
| 10+ | 12.78 EUR |
| 120+ | 10.52 EUR |
| 510+ | 9.37 EUR |
| 1020+ | 8.77 EUR |
| NTHL095N65S3HF |
|
Hersteller: onsemi
MOSFETs SUPERFET3 650V FRFET 95MO
MOSFETs SUPERFET3 650V FRFET 95MO
auf Bestellung 853 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 18.85 EUR |
| 10+ | 13.32 EUR |
| 120+ | 11.1 EUR |
| 510+ | 9.89 EUR |
| 1020+ | 9.23 EUR |
| NTHL095N65S3HF |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V
Description: MOSFET N-CH 650V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V
auf Bestellung 1050 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.02 EUR |
| 30+ | 10.64 EUR |
| 120+ | 9.02 EUR |
| 510+ | 8.23 EUR |
| NTHL125N65S3H |
|
Hersteller: onsemi
MOSFETs SUPERFET3 FAST 125MOHM TO-247-3
MOSFETs SUPERFET3 FAST 125MOHM TO-247-3
auf Bestellung 349 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 16.67 EUR |
| 10+ | 11.75 EUR |
| 120+ | 9.48 EUR |
| 510+ | 8.43 EUR |
| 1020+ | 7.47 EUR |
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