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AIGB15N65F5ATMA1 AIGB15N65F5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: DISCRETE SWITCHES
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.79 EUR
10+ 4.03 EUR
100+ 3.26 EUR
500+ 2.9 EUR
Mindestbestellmenge: 4
AIGB15N65F5ATMA1 AIGB15N65F5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: DISCRETE SWITCHES
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+2.24 EUR
Mindestbestellmenge: 1000
AIGB15N65H5ATMA1 AIGB15N65H5ATMA1 Infineon Technologies Infineon-AIGB15N65H5-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b6669e363172 Description: IGBT NPT 650V 30A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 24ns/22ns
Switching Energy: 160µJ (on), 40µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 968 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.79 EUR
10+ 4.03 EUR
100+ 3.26 EUR
500+ 2.9 EUR
Mindestbestellmenge: 4
AIKB15N65DF5ATMA1 AIKB15N65DF5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: DISCRETE SWITCHES
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.04 EUR
10+ 5.06 EUR
100+ 4.1 EUR
500+ 3.64 EUR
Mindestbestellmenge: 3
AIKB15N65DF5ATMA1 AIKB15N65DF5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: DISCRETE SWITCHES
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+3.12 EUR
2000+ 2.93 EUR
Mindestbestellmenge: 1000
AIKB15N65DH5ATMA1 AIKB15N65DH5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: DISCRETE SWITCHES
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+3.12 EUR
2000+ 2.93 EUR
Mindestbestellmenge: 1000
AIKB15N65DH5ATMA1 AIKB15N65DH5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: DISCRETE SWITCHES
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.04 EUR
10+ 5.06 EUR
100+ 4.1 EUR
500+ 3.64 EUR
Mindestbestellmenge: 3
BGH75N65ZF1 BGH75N65ZF1 BASiC SEMICONDUCTOR BGH75N65ZF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 405W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 565ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.76 EUR
7+ 11.01 EUR
Mindestbestellmenge: 5
BGH75N65ZF1 BGH75N65ZF1 BASiC SEMICONDUCTOR BGH75N65ZF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 405W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 565ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
5+15.76 EUR
7+ 11.01 EUR
150+ 10.58 EUR
Mindestbestellmenge: 5
BIDW75N65EH5 BIDW75N65EH5 Bourns Bourns_01_17_2024_BIDW75N65EH5-3392669.pdf IGBT Transistors IGBT Discrete 650V, 75A, High speed switching in TO-247-3L
auf Bestellung 2982 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.23 EUR
10+ 8.76 EUR
25+ 7.94 EUR
100+ 7.3 EUR
250+ 6.88 EUR
600+ 6.42 EUR
1200+ 5.79 EUR
BIDW75N65ES5 BIDW75N65ES5 Bourns Bourns_01_17_2024_BIDW75N65ES5-3392676.pdf IGBT Transistors IGBT Discrete 650V, 75A, Medium speed switching in TO-247-3L
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.23 EUR
10+ 8.76 EUR
25+ 7.94 EUR
100+ 7.3 EUR
250+ 6.88 EUR
600+ 6.42 EUR
1200+ 5.79 EUR
FCB125N65S3 FCB125N65S3 onsemi FCB125N65S3_D-2311543.pdf MOSFET Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 24 A, 125 mohm, D2PAK
auf Bestellung 3060 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.06 EUR
10+ 6.78 EUR
25+ 5.97 EUR
100+ 5.49 EUR
250+ 5.17 EUR
500+ 4.89 EUR
800+ 4.14 EUR
FCB125N65S3 FCB125N65S3 onsemi fcb125n65s3-d.pdf Description: MOSFET N-CH 650V 24A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 590µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 780 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.92 EUR
10+ 6.65 EUR
100+ 5.38 EUR
Mindestbestellmenge: 3
FCH125N65S3R0-F155 FCH125N65S3R0-F155 onsemi fch125n65s3r0-d.pdf Description: MOSFET N-CH 650V 24A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 2700 Stücke:
Lieferzeit 10-14 Tag (e)
2+11 EUR
30+ 8.71 EUR
120+ 7.47 EUR
510+ 6.64 EUR
1020+ 5.68 EUR
2010+ 5.35 EUR
Mindestbestellmenge: 2
FCH165N65S3R0-F155 FCH165N65S3R0-F155 onsemi fch165n65s3r0-d.pdf Description: MOSFET N-CH 650V 19A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 439 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.09 EUR
10+ 5.95 EUR
Mindestbestellmenge: 3
FCMT125N65S3 FCMT125N65S3 onsemi fcmt125n65s3-d.pdf Description: MOSFET N-CH 650V 24A 4PQFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 590µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 400 V
auf Bestellung 63000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+4.78 EUR
Mindestbestellmenge: 3000
FCMT125N65S3 FCMT125N65S3 onsemi FCMT125N65S3_D-2312043.pdf MOSFET SF3 650V 125MOHM MO SFET
auf Bestellung 2443 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.6 EUR
10+ 5.83 EUR
25+ 5.81 EUR
100+ 5.03 EUR
250+ 5.02 EUR
500+ 4.73 EUR
FCMT125N65S3 FCMT125N65S3 onsemi fcmt125n65s3-d.pdf Description: MOSFET N-CH 650V 24A 4PQFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 590µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 400 V
auf Bestellung 63965 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.82 EUR
10+ 8.25 EUR
100+ 6.67 EUR
500+ 5.93 EUR
1000+ 5.08 EUR
Mindestbestellmenge: 2
FCP125N65S3 FCP125N65S3 onsemi fcp125n65s3-d.pdf Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
50+3.96 EUR
100+ 3.4 EUR
250+ 3.32 EUR
Mindestbestellmenge: 50
FCP125N65S3 FCP125N65S3 onsemi FCP125N65S3_D-2311643.pdf MOSFET SF3 650V 125MOHM E TO220
auf Bestellung 799 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.06 EUR
10+ 5.93 EUR
50+ 5.6 EUR
100+ 4.79 EUR
250+ 4.52 EUR
500+ 4.26 EUR
800+ 3.64 EUR
FCP125N65S3 FCP125N65S3 onsemi fcp125n65s3-d.pdf Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Cut Tape (CT)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 775 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.11 EUR
10+ 5.98 EUR
Mindestbestellmenge: 3
FCP125N65S3R0 FCP125N65S3R0 onsemi FCP125N65S3R0_D-2311923.pdf MOSFET SUPERFET3 650V 24A 125 mOhm
auf Bestellung 797 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.23 EUR
10+ 6.09 EUR
50+ 5.53 EUR
100+ 4.91 EUR
250+ 4.89 EUR
500+ 4.19 EUR
800+ 3.52 EUR
FCP125N65S3R0 FCP125N65S3R0 onsemi fcp125n65s3r0-d.pdf Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.29 EUR
50+ 5.78 EUR
100+ 4.95 EUR
500+ 4.4 EUR
Mindestbestellmenge: 3
FCP165N65S3 FCP165N65S3 onsemi FCP165N65S3_D-2311887.pdf MOSFET SUPERFET3 650V 19A 165 mOhm
auf Bestellung 911 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.42 EUR
10+ 5.39 EUR
50+ 5.19 EUR
100+ 4.82 EUR
250+ 4.7 EUR
500+ 4.59 EUR
800+ 3.73 EUR
FCP165N65S3R0 FCP165N65S3R0 onsemi FCP165N65S3R0_D-2311924.pdf MOSFET SUPERFET3 650V TO220 PKG
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.39 EUR
10+ 5.37 EUR
50+ 4.35 EUR
500+ 4.19 EUR
800+ 4.12 EUR
2400+ 3.94 EUR
5600+ 3.91 EUR
FCP165N65S3R0 FCP165N65S3R0 onsemi fcp165n65s3r0-d.pdf Description: MOSFET N-CH 650V 19A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 3527 Stücke:
Lieferzeit 10-14 Tag (e)
143+3.46 EUR
Mindestbestellmenge: 143
FCPF125N65S3 FCPF125N65S3 onsemi fcpf125n65s3-d.pdf Description: MOSFET N-CH 650V 24A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 400 V
auf Bestellung 563 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.92 EUR
50+ 6.28 EUR
100+ 5.38 EUR
500+ 4.78 EUR
Mindestbestellmenge: 3
FCPF165N65S3L1-F154 FCPF165N65S3L1-F154 onsemi FCPF165N65S3L1_D-2311889.pdf MOSFET SF3 650V 165MOHM E TO220F
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.84 EUR
10+ 4.05 EUR
100+ 3.2 EUR
250+ 2.96 EUR
500+ 2.69 EUR
1000+ 2.27 EUR
2000+ 2.18 EUR
FDPF15N65 FDPF15N65 onsemi Description: MOSFET N-CH 650V 15A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 7.5A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3095 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 464 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.44 EUR
50+ 3.52 EUR
100+ 3.01 EUR
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IGD15N65T6ARMA1 IGD15N65T6ARMA1 Infineon Technologies Infineon_IGD15N65T6_DataSheet_v02_03_EN-2898625.pdf IGBT Transistors HOME APPLIANCES 14
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IGW75N65H5XKSA1 IGW75N65H5XKSA1 Infineon Technologies Infineon-IGW75N65H5-DS-v02_01-EN.pdf?fileId=5546d4624d6fc3d5014df745d10c4394 Description: IGBT TRENCH 650V 120A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 28ns/174ns
Switching Energy: 2.25mJ (on), 950µJ (off)
Test Condition: 400V, 75A, 8Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 341 Stücke:
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IGW75N65H5XKSA1 IGW75N65H5XKSA1 Infineon Technologies infineon-igw75n65h5-ds-v02_02-en.pdf Trans IGBT Chip N-CH 650V 120A 395000mW 3-Pin(3+Tab) TO-247 Tube
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IKA15N65ET6XKSA2 IKA15N65ET6XKSA2 INFINEON TECHNOLOGIES IKA15N65ET6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 11A; 22W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 650V
Collector current: 11A
Power dissipation: 22W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 57.5A
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Manufacturer series: T6
Turn-on time: 50ns
Turn-off time: 202ns
Features of semiconductor devices: integrated anti-parallel diode
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50+1.43 EUR
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IKA15N65ET6XKSA2 IKA15N65ET6XKSA2 Infineon Technologies infineon-ika15n65et6-datasheet-v01_00-en.pdf Trans IGBT Chip N-CH 650V 17A 45000mW 3-Pin(3+Tab) TO-220FP Tube
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IKA15N65F5XKSA1 IKA15N65F5XKSA1 Infineon Technologies DS_IKA15N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af98304715d4b Description: IGBT 650V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO220-FP
Td (on/off) @ 25°C: 17ns/150ns
Switching Energy: 130µJ (on), 40µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 33.3 W
auf Bestellung 564 Stücke:
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IKB15N65EH5ATMA1 IKB15N65EH5ATMA1 Infineon Technologies Infineon-IKB15N65EH5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd1328dc4914 Description: IGBT TRENCH FS 650V 30A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/145ns
Switching Energy: 400µJ (on), 80µJ (off)
Test Condition: 400V, 15A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
auf Bestellung 911 Stücke:
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IKFW75N65EH5XKSA1 IKFW75N65EH5XKSA1 Infineon Technologies Infineon-IKFW75N65EH5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174d972d5b51efd Description: IGBT TRENCH FS 650V 80A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/206ns
Switching Energy: 1.8mJ (on), 600µJ (off)
Test Condition: 400V, 60A, 12Ohm, 15V
Gate Charge: 144 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 148 W
auf Bestellung 400 Stücke:
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IKFW75N65EH5XKSA1 IKFW75N65EH5XKSA1 Infineon Technologies Infineon_IKFW75N65EH5_DataSheet_v02_01_EN-3361942.pdf IGBT Transistors INDUSTRY 14
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IKFW75N65ES5XKSA1 IKFW75N65ES5XKSA1 Infineon Technologies Infineon_IKFW75N65ES5_DataSheet_v02_01_EN-3362028.pdf IGBT Transistors INDUSTRY 14
auf Bestellung 1951 Stücke:
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IKW75N65EL5XKSA1 IKW75N65EL5XKSA1 Infineon Technologies Infineon-IKW75N65EL5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd6e4e3acf Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 40ns/275ns
Switching Energy: 1.61mJ (on), 3.2mJ (off)
Test Condition: 400V, 75A, 4Ohm, 15V
Gate Charge: 436 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 536 W
auf Bestellung 300 Stücke:
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2+13.31 EUR
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IKW75N65EL5XKSA1 IKW75N65EL5XKSA1 Infineon Technologies infineon-ikw75n65el5-ds-v02_01-en.pdf Trans IGBT Chip N-CH 650V 80A 536000mW 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 330 Stücke:
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IKW75N65ES5XKSA1 IKW75N65ES5XKSA1 Infineon Technologies Infineon-IKW75N65ES5-DS-v02_02-EN.pdf?fileId=5546d4624fb7fef201501842e2da19c8 Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 85 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 40ns/144ns
Switching Energy: 2.4mJ (on), 950µJ (off)
Test Condition: 400V, 75A, 18Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 14369 Stücke:
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2+11.32 EUR
30+ 9.04 EUR
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IKW75N65ES5XKSA1 IKW75N65ES5XKSA1 Infineon Technologies infineon-ikw75n65es5-ds-v02_02-en.pdf Trans IGBT Chip N-CH 650V 80A 395000mW 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 110 Stücke:
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IKW75N65ET7XKSA1 IKW75N65ET7XKSA1 Infineon Technologies Infineon_IKW75N65ET7_DataSheet_v01_10_EN-3361891.pdf IGBT Transistors INDUSTRY 14
auf Bestellung 458 Stücke:
Lieferzeit 10-14 Tag (e)
1+11.81 EUR
10+ 10.93 EUR
25+ 8.24 EUR
100+ 7.71 EUR
240+ 7.69 EUR
480+ 6.71 EUR
1200+ 6.41 EUR
IKW75N65ET7XKSA1 IKW75N65ET7XKSA1 Infineon Technologies Infineon-IKW75N65ET7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a017351bee5af57fb Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/310ns
Switching Energy: 2.17mJ (on), 1.23mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 435 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 333 W
Qualification: AEC-Q101
auf Bestellung 454 Stücke:
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2+11.93 EUR
30+ 9.52 EUR
120+ 8.52 EUR
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IKW75N65RH5XKSA1 IKW75N65RH5XKSA1 Infineon Technologies Infineon_IKW75N65RH5_DataSheet_v01_10_EN-3362068.pdf IGBT Transistors SIC DISCRETE
auf Bestellung 456 Stücke:
Lieferzeit 10-14 Tag (e)
1+14.85 EUR
10+ 12.72 EUR
25+ 11.55 EUR
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1200+ 8.03 EUR
IKW75N65RH5XKSA1 IKW75N65RH5XKSA1 Infineon Technologies Infineon-IKW75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc281ce931ac Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/180ns
Switching Energy: 360µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 274 Stücke:
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2+14.94 EUR
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120+ 10.67 EUR
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IKW75N65SS5XKSA1 IKW75N65SS5XKSA1 Infineon Technologies Infineon_IKW75N65SS5_DataSheet_v01_10_EN-3362295.pdf IGBT Transistors SIC DISCRETE
auf Bestellung 606 Stücke:
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1+18.92 EUR
10+ 17.93 EUR
25+ 17.02 EUR
50+ 16.58 EUR
100+ 15.52 EUR
240+ 15.07 EUR
480+ 13.45 EUR
IKWH75N65EH7XKSA1 IKWH75N65EH7XKSA1 Infineon Technologies Infineon-IKWH75N65EH7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8900bb5701892508738f2062 Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-32
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/45ns
Switching Energy: 2.42mJ (on), 1.4mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 341 W
auf Bestellung 119 Stücke:
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2+11.51 EUR
10+ 9.87 EUR
Mindestbestellmenge: 2
IKWH75N65EH7XKSA1 IKWH75N65EH7XKSA1 Infineon Technologies Infineon-IKWH75N65EH7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8900bb5701892508738f2062 IGBT Transistors INDUSTRY 14
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1200+ 6.48 EUR
IKZA75N65EH7XKSA1 IKZA75N65EH7XKSA1 Infineon Technologies Infineon-IKZA75N65EH7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8900bb570189250859a5205b IGBT Transistors INDUSTRY 14
auf Bestellung 198 Stücke:
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IKZA75N65RH5XKSA1 IKZA75N65RH5XKSA1 Infineon Technologies Infineon-IKZA75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc28779431bb Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 310µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 49 Stücke:
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2+16.26 EUR
30+ 12.99 EUR
Mindestbestellmenge: 2
IKZA75N65RH5XKSA1 IKZA75N65RH5XKSA1 Infineon Technologies Infineon_IKZA75N65RH5_DataSheet_v01_10_EN-3362098.pdf IGBT Transistors SIC DISCRETE
auf Bestellung 299 Stücke:
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2640+ 8.75 EUR
IKZA75N65SS5XKSA1 IKZA75N65SS5XKSA1 Infineon Technologies Infineon-IKZA75N65SS5-DataSheet-v02_02-EN.pdf?fileId=5546d46275b79adb0175dc288d0031be Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 75A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/145ns
Switching Energy: 240µJ (on), 750µJ (off)
Test Condition: 400V, 75A, 5.6Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 256 Stücke:
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1+21.67 EUR
30+ 17.55 EUR
120+ 16.52 EUR
IKZA75N65SS5XKSA1 IKZA75N65SS5XKSA1 Infineon Technologies Infineon_IKZA75N65SS5_DataSheet_v01_10_EN-3362100.pdf IGBT Transistors SIC DISCRETE
auf Bestellung 557 Stücke:
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IKZA75N65SS5XKSA1 Infineon Technologies infineon-ikza75n65ss5-datasheet-v01_10-en.pdf SP004038220
auf Bestellung 85 Stücke:
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IRFIB5N65APBF IRFIB5N65APBF Vishay Siliconix sihfib5n.pdf Description: MOSFET N-CH 650V 5.1A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 930mOhm @ 3.1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V
auf Bestellung 927 Stücke:
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3+6.92 EUR
50+ 5.49 EUR
100+ 4.7 EUR
500+ 4.18 EUR
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IXYA15N65C3D1 IXYA15N65C3D1 IXYS IXYA(P)15N65C3D1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 102ns
auf Bestellung 260 Stücke:
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22+3.37 EUR
24+ 3.05 EUR
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32+ 2.29 EUR
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IXYA15N65C3D1 IXYA15N65C3D1 IXYS IXYA(P)15N65C3D1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 102ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 260 Stücke:
Lieferzeit 7-14 Tag (e)
22+3.37 EUR
24+ 3.05 EUR
30+ 2.42 EUR
32+ 2.29 EUR
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IXYH75N65C3H1 IXYH75N65C3H1 IXYS media-3319727.pdf IGBT Transistors 650V/170A XPT C3-Class TO-247
auf Bestellung 179 Stücke:
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1+27.46 EUR
10+ 24.2 EUR
30+ 20.66 EUR
60+ 19.94 EUR
120+ 19.24 EUR
270+ 19.17 EUR
510+ 18.15 EUR
AIGB15N65F5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIGB15N65F5ATMA1
Hersteller: Infineon Technologies
Description: DISCRETE SWITCHES
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.79 EUR
10+ 4.03 EUR
100+ 3.26 EUR
500+ 2.9 EUR
Mindestbestellmenge: 4
AIGB15N65F5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIGB15N65F5ATMA1
Hersteller: Infineon Technologies
Description: DISCRETE SWITCHES
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+2.24 EUR
Mindestbestellmenge: 1000
AIGB15N65H5ATMA1 Infineon-AIGB15N65H5-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b6669e363172
AIGB15N65H5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 30A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 24ns/22ns
Switching Energy: 160µJ (on), 40µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 968 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.79 EUR
10+ 4.03 EUR
100+ 3.26 EUR
500+ 2.9 EUR
Mindestbestellmenge: 4
AIKB15N65DF5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIKB15N65DF5ATMA1
Hersteller: Infineon Technologies
Description: DISCRETE SWITCHES
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.04 EUR
10+ 5.06 EUR
100+ 4.1 EUR
500+ 3.64 EUR
Mindestbestellmenge: 3
AIKB15N65DF5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIKB15N65DF5ATMA1
Hersteller: Infineon Technologies
Description: DISCRETE SWITCHES
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+3.12 EUR
2000+ 2.93 EUR
Mindestbestellmenge: 1000
AIKB15N65DH5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIKB15N65DH5ATMA1
Hersteller: Infineon Technologies
Description: DISCRETE SWITCHES
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+3.12 EUR
2000+ 2.93 EUR
Mindestbestellmenge: 1000
AIKB15N65DH5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIKB15N65DH5ATMA1
Hersteller: Infineon Technologies
Description: DISCRETE SWITCHES
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.04 EUR
10+ 5.06 EUR
100+ 4.1 EUR
500+ 3.64 EUR
Mindestbestellmenge: 3
BGH75N65ZF1 BGH75N65ZF1.pdf
BGH75N65ZF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 405W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 565ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5+15.76 EUR
7+ 11.01 EUR
Mindestbestellmenge: 5
BGH75N65ZF1 BGH75N65ZF1.pdf
BGH75N65ZF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 405W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 565ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+15.76 EUR
7+ 11.01 EUR
150+ 10.58 EUR
Mindestbestellmenge: 5
BIDW75N65EH5 Bourns_01_17_2024_BIDW75N65EH5-3392669.pdf
BIDW75N65EH5
Hersteller: Bourns
IGBT Transistors IGBT Discrete 650V, 75A, High speed switching in TO-247-3L
auf Bestellung 2982 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+10.23 EUR
10+ 8.76 EUR
25+ 7.94 EUR
100+ 7.3 EUR
250+ 6.88 EUR
600+ 6.42 EUR
1200+ 5.79 EUR
BIDW75N65ES5 Bourns_01_17_2024_BIDW75N65ES5-3392676.pdf
BIDW75N65ES5
Hersteller: Bourns
IGBT Transistors IGBT Discrete 650V, 75A, Medium speed switching in TO-247-3L
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+10.23 EUR
10+ 8.76 EUR
25+ 7.94 EUR
100+ 7.3 EUR
250+ 6.88 EUR
600+ 6.42 EUR
1200+ 5.79 EUR
FCB125N65S3 FCB125N65S3_D-2311543.pdf
FCB125N65S3
Hersteller: onsemi
MOSFET Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 24 A, 125 mohm, D2PAK
auf Bestellung 3060 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+8.06 EUR
10+ 6.78 EUR
25+ 5.97 EUR
100+ 5.49 EUR
250+ 5.17 EUR
500+ 4.89 EUR
800+ 4.14 EUR
FCB125N65S3 fcb125n65s3-d.pdf
FCB125N65S3
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 590µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 780 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.92 EUR
10+ 6.65 EUR
100+ 5.38 EUR
Mindestbestellmenge: 3
FCH125N65S3R0-F155 fch125n65s3r0-d.pdf
FCH125N65S3R0-F155
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 2700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11 EUR
30+ 8.71 EUR
120+ 7.47 EUR
510+ 6.64 EUR
1020+ 5.68 EUR
2010+ 5.35 EUR
Mindestbestellmenge: 2
FCH165N65S3R0-F155 fch165n65s3r0-d.pdf
FCH165N65S3R0-F155
Hersteller: onsemi
Description: MOSFET N-CH 650V 19A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 439 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.09 EUR
10+ 5.95 EUR
Mindestbestellmenge: 3
FCMT125N65S3 fcmt125n65s3-d.pdf
FCMT125N65S3
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A 4PQFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 590µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 400 V
auf Bestellung 63000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+4.78 EUR
Mindestbestellmenge: 3000
FCMT125N65S3 FCMT125N65S3_D-2312043.pdf
FCMT125N65S3
Hersteller: onsemi
MOSFET SF3 650V 125MOHM MO SFET
auf Bestellung 2443 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.6 EUR
10+ 5.83 EUR
25+ 5.81 EUR
100+ 5.03 EUR
250+ 5.02 EUR
500+ 4.73 EUR
FCMT125N65S3 fcmt125n65s3-d.pdf
FCMT125N65S3
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A 4PQFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 590µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 400 V
auf Bestellung 63965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.82 EUR
10+ 8.25 EUR
100+ 6.67 EUR
500+ 5.93 EUR
1000+ 5.08 EUR
Mindestbestellmenge: 2
FCP125N65S3 fcp125n65s3-d.pdf
FCP125N65S3
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
50+3.96 EUR
100+ 3.4 EUR
250+ 3.32 EUR
Mindestbestellmenge: 50
FCP125N65S3 FCP125N65S3_D-2311643.pdf
FCP125N65S3
Hersteller: onsemi
MOSFET SF3 650V 125MOHM E TO220
auf Bestellung 799 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+7.06 EUR
10+ 5.93 EUR
50+ 5.6 EUR
100+ 4.79 EUR
250+ 4.52 EUR
500+ 4.26 EUR
800+ 3.64 EUR
FCP125N65S3 fcp125n65s3-d.pdf
FCP125N65S3
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Cut Tape (CT)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 775 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.11 EUR
10+ 5.98 EUR
Mindestbestellmenge: 3
FCP125N65S3R0 FCP125N65S3R0_D-2311923.pdf
FCP125N65S3R0
Hersteller: onsemi
MOSFET SUPERFET3 650V 24A 125 mOhm
auf Bestellung 797 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+7.23 EUR
10+ 6.09 EUR
50+ 5.53 EUR
100+ 4.91 EUR
250+ 4.89 EUR
500+ 4.19 EUR
800+ 3.52 EUR
FCP125N65S3R0 fcp125n65s3r0-d.pdf
FCP125N65S3R0
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.29 EUR
50+ 5.78 EUR
100+ 4.95 EUR
500+ 4.4 EUR
Mindestbestellmenge: 3
FCP165N65S3 FCP165N65S3_D-2311887.pdf
FCP165N65S3
Hersteller: onsemi
MOSFET SUPERFET3 650V 19A 165 mOhm
auf Bestellung 911 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.42 EUR
10+ 5.39 EUR
50+ 5.19 EUR
100+ 4.82 EUR
250+ 4.7 EUR
500+ 4.59 EUR
800+ 3.73 EUR
FCP165N65S3R0 FCP165N65S3R0_D-2311924.pdf
FCP165N65S3R0
Hersteller: onsemi
MOSFET SUPERFET3 650V TO220 PKG
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.39 EUR
10+ 5.37 EUR
50+ 4.35 EUR
500+ 4.19 EUR
800+ 4.12 EUR
2400+ 3.94 EUR
5600+ 3.91 EUR
FCP165N65S3R0 fcp165n65s3r0-d.pdf
FCP165N65S3R0
Hersteller: onsemi
Description: MOSFET N-CH 650V 19A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 3527 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
143+3.46 EUR
Mindestbestellmenge: 143
FCPF125N65S3 fcpf125n65s3-d.pdf
FCPF125N65S3
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 400 V
auf Bestellung 563 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.92 EUR
50+ 6.28 EUR
100+ 5.38 EUR
500+ 4.78 EUR
Mindestbestellmenge: 3
FCPF165N65S3L1-F154 FCPF165N65S3L1_D-2311889.pdf
FCPF165N65S3L1-F154
Hersteller: onsemi
MOSFET SF3 650V 165MOHM E TO220F
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.84 EUR
10+ 4.05 EUR
100+ 3.2 EUR
250+ 2.96 EUR
500+ 2.69 EUR
1000+ 2.27 EUR
2000+ 2.18 EUR
FDPF15N65
FDPF15N65
Hersteller: onsemi
Description: MOSFET N-CH 650V 15A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 7.5A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3095 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 464 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.44 EUR
50+ 3.52 EUR
100+ 3.01 EUR
Mindestbestellmenge: 4
IGD15N65T6ARMA1 Infineon_IGD15N65T6_DataSheet_v02_03_EN-2898625.pdf
IGD15N65T6ARMA1
Hersteller: Infineon Technologies
IGBT Transistors HOME APPLIANCES 14
auf Bestellung 2702 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.33 EUR
10+ 2.6 EUR
100+ 2.22 EUR
250+ 2.11 EUR
500+ 1.87 EUR
1000+ 1.73 EUR
IGW75N65H5XKSA1 Infineon-IGW75N65H5-DS-v02_01-EN.pdf?fileId=5546d4624d6fc3d5014df745d10c4394
IGW75N65H5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 120A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 28ns/174ns
Switching Energy: 2.25mJ (on), 950µJ (off)
Test Condition: 400V, 75A, 8Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 341 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.75 EUR
30+ 6.93 EUR
120+ 5.94 EUR
Mindestbestellmenge: 3
IGW75N65H5XKSA1 infineon-igw75n65h5-ds-v02_02-en.pdf
IGW75N65H5XKSA1
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 650V 120A 395000mW 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
IKA15N65ET6XKSA2 IKA15N65ET6.pdf
IKA15N65ET6XKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 11A; 22W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 650V
Collector current: 11A
Power dissipation: 22W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 57.5A
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Manufacturer series: T6
Turn-on time: 50ns
Turn-off time: 202ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
50+1.43 EUR
53+ 1.37 EUR
Mindestbestellmenge: 50
IKA15N65ET6XKSA2 infineon-ika15n65et6-datasheet-v01_00-en.pdf
IKA15N65ET6XKSA2
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 650V 17A 45000mW 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 236 Stücke:
Lieferzeit 14-21 Tag (e)
IKA15N65F5XKSA1 DS_IKA15N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af98304715d4b
IKA15N65F5XKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO220-FP
Td (on/off) @ 25°C: 17ns/150ns
Switching Energy: 130µJ (on), 40µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 33.3 W
auf Bestellung 564 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.82 EUR
50+ 3.07 EUR
100+ 2.53 EUR
500+ 2.14 EUR
Mindestbestellmenge: 5
IKB15N65EH5ATMA1 Infineon-IKB15N65EH5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd1328dc4914
IKB15N65EH5ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 30A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/145ns
Switching Energy: 400µJ (on), 80µJ (off)
Test Condition: 400V, 15A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
auf Bestellung 911 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.82 EUR
10+ 4.01 EUR
100+ 3.2 EUR
500+ 2.7 EUR
Mindestbestellmenge: 4
IKFW75N65EH5XKSA1 Infineon-IKFW75N65EH5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174d972d5b51efd
IKFW75N65EH5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/206ns
Switching Energy: 1.8mJ (on), 600µJ (off)
Test Condition: 400V, 60A, 12Ohm, 15V
Gate Charge: 144 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 148 W
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+15.98 EUR
30+ 12.77 EUR
120+ 11.42 EUR
Mindestbestellmenge: 2
IKFW75N65EH5XKSA1 Infineon_IKFW75N65EH5_DataSheet_v02_01_EN-3361942.pdf
IKFW75N65EH5XKSA1
Hersteller: Infineon Technologies
IGBT Transistors INDUSTRY 14
auf Bestellung 705 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+14.13 EUR
10+ 13.45 EUR
25+ 11.04 EUR
100+ 9.93 EUR
240+ 8.59 EUR
IKFW75N65ES5XKSA1 Infineon_IKFW75N65ES5_DataSheet_v02_01_EN-3362028.pdf
IKFW75N65ES5XKSA1
Hersteller: Infineon Technologies
IGBT Transistors INDUSTRY 14
auf Bestellung 1951 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+15.79 EUR
10+ 13.55 EUR
25+ 12.28 EUR
100+ 9.98 EUR
240+ 9.33 EUR
480+ 8.96 EUR
IKW75N65EL5XKSA1 Infineon-IKW75N65EL5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd6e4e3acf
IKW75N65EL5XKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 40ns/275ns
Switching Energy: 1.61mJ (on), 3.2mJ (off)
Test Condition: 400V, 75A, 4Ohm, 15V
Gate Charge: 436 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 536 W
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+13.31 EUR
30+ 10.62 EUR
120+ 9.5 EUR
Mindestbestellmenge: 2
IKW75N65EL5XKSA1 infineon-ikw75n65el5-ds-v02_01-en.pdf
IKW75N65EL5XKSA1
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 650V 80A 536000mW 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 330 Stücke:
Lieferzeit 14-21 Tag (e)
IKW75N65ES5XKSA1 Infineon-IKW75N65ES5-DS-v02_02-EN.pdf?fileId=5546d4624fb7fef201501842e2da19c8
IKW75N65ES5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 85 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 40ns/144ns
Switching Energy: 2.4mJ (on), 950µJ (off)
Test Condition: 400V, 75A, 18Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 14369 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11.32 EUR
30+ 9.04 EUR
120+ 8.08 EUR
510+ 7.13 EUR
1020+ 6.42 EUR
2010+ 6.02 EUR
Mindestbestellmenge: 2
IKW75N65ES5XKSA1 infineon-ikw75n65es5-ds-v02_02-en.pdf
IKW75N65ES5XKSA1
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 650V 80A 395000mW 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)
IKW75N65ET7XKSA1 Infineon_IKW75N65ET7_DataSheet_v01_10_EN-3361891.pdf
IKW75N65ET7XKSA1
Hersteller: Infineon Technologies
IGBT Transistors INDUSTRY 14
auf Bestellung 458 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+11.81 EUR
10+ 10.93 EUR
25+ 8.24 EUR
100+ 7.71 EUR
240+ 7.69 EUR
480+ 6.71 EUR
1200+ 6.41 EUR
IKW75N65ET7XKSA1 Infineon-IKW75N65ET7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a017351bee5af57fb
IKW75N65ET7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/310ns
Switching Energy: 2.17mJ (on), 1.23mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 435 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 333 W
Qualification: AEC-Q101
auf Bestellung 454 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11.93 EUR
30+ 9.52 EUR
120+ 8.52 EUR
Mindestbestellmenge: 2
IKW75N65RH5XKSA1 Infineon_IKW75N65RH5_DataSheet_v01_10_EN-3362068.pdf
IKW75N65RH5XKSA1
Hersteller: Infineon Technologies
IGBT Transistors SIC DISCRETE
auf Bestellung 456 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+14.85 EUR
10+ 12.72 EUR
25+ 11.55 EUR
100+ 10.6 EUR
240+ 9.96 EUR
480+ 8.41 EUR
1200+ 8.03 EUR
IKW75N65RH5XKSA1 Infineon-IKW75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc281ce931ac
IKW75N65RH5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/180ns
Switching Energy: 360µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 274 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+14.94 EUR
30+ 11.93 EUR
120+ 10.67 EUR
Mindestbestellmenge: 2
IKW75N65SS5XKSA1 Infineon_IKW75N65SS5_DataSheet_v01_10_EN-3362295.pdf
IKW75N65SS5XKSA1
Hersteller: Infineon Technologies
IGBT Transistors SIC DISCRETE
auf Bestellung 606 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+18.92 EUR
10+ 17.93 EUR
25+ 17.02 EUR
50+ 16.58 EUR
100+ 15.52 EUR
240+ 15.07 EUR
480+ 13.45 EUR
IKWH75N65EH7XKSA1 Infineon-IKWH75N65EH7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8900bb5701892508738f2062
IKWH75N65EH7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-32
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/45ns
Switching Energy: 2.42mJ (on), 1.4mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 341 W
auf Bestellung 119 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11.51 EUR
10+ 9.87 EUR
Mindestbestellmenge: 2
IKWH75N65EH7XKSA1 Infineon-IKWH75N65EH7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8900bb5701892508738f2062
IKWH75N65EH7XKSA1
Hersteller: Infineon Technologies
IGBT Transistors INDUSTRY 14
auf Bestellung 73 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+11.44 EUR
10+ 9.8 EUR
25+ 8.91 EUR
100+ 8.17 EUR
240+ 7.67 EUR
480+ 7.2 EUR
1200+ 6.48 EUR
IKZA75N65EH7XKSA1 Infineon-IKZA75N65EH7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8900bb570189250859a5205b
IKZA75N65EH7XKSA1
Hersteller: Infineon Technologies
IGBT Transistors INDUSTRY 14
auf Bestellung 198 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+13.68 EUR
10+ 11.74 EUR
25+ 10.65 EUR
100+ 9.77 EUR
240+ 9.19 EUR
480+ 8.61 EUR
1200+ 7.76 EUR
IKZA75N65RH5XKSA1 Infineon-IKZA75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc28779431bb
IKZA75N65RH5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 310µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+16.26 EUR
30+ 12.99 EUR
Mindestbestellmenge: 2
IKZA75N65RH5XKSA1 Infineon_IKZA75N65RH5_DataSheet_v01_10_EN-3362098.pdf
IKZA75N65RH5XKSA1
Hersteller: Infineon Technologies
IGBT Transistors SIC DISCRETE
auf Bestellung 299 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+14.47 EUR
10+ 13.75 EUR
25+ 12.32 EUR
100+ 10.21 EUR
240+ 9.93 EUR
480+ 9.15 EUR
2640+ 8.75 EUR
IKZA75N65SS5XKSA1 Infineon-IKZA75N65SS5-DataSheet-v02_02-EN.pdf?fileId=5546d46275b79adb0175dc288d0031be
IKZA75N65SS5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 75A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/145ns
Switching Energy: 240µJ (on), 750µJ (off)
Test Condition: 400V, 75A, 5.6Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 256 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+21.67 EUR
30+ 17.55 EUR
120+ 16.52 EUR
IKZA75N65SS5XKSA1 Infineon_IKZA75N65SS5_DataSheet_v01_10_EN-3362100.pdf
IKZA75N65SS5XKSA1
Hersteller: Infineon Technologies
IGBT Transistors SIC DISCRETE
auf Bestellung 557 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+21.51 EUR
10+ 18.99 EUR
25+ 17.42 EUR
100+ 16.4 EUR
240+ 15.88 EUR
480+ 13.92 EUR
1200+ 13.64 EUR
IKZA75N65SS5XKSA1 infineon-ikza75n65ss5-datasheet-v01_10-en.pdf
Hersteller: Infineon Technologies
SP004038220
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
IRFIB5N65APBF sihfib5n.pdf
IRFIB5N65APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 5.1A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 930mOhm @ 3.1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V
auf Bestellung 927 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.92 EUR
50+ 5.49 EUR
100+ 4.7 EUR
500+ 4.18 EUR
Mindestbestellmenge: 3
IXYA15N65C3D1 IXYA(P)15N65C3D1.pdf
IXYA15N65C3D1
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 102ns
auf Bestellung 260 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
22+3.37 EUR
24+ 3.05 EUR
30+ 2.42 EUR
32+ 2.29 EUR
Mindestbestellmenge: 22
IXYA15N65C3D1 IXYA(P)15N65C3D1.pdf
IXYA15N65C3D1
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 102ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 260 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
22+3.37 EUR
24+ 3.05 EUR
30+ 2.42 EUR
32+ 2.29 EUR
Mindestbestellmenge: 22
IXYH75N65C3H1 media-3319727.pdf
IXYH75N65C3H1
Hersteller: IXYS
IGBT Transistors 650V/170A XPT C3-Class TO-247
auf Bestellung 179 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+27.46 EUR
10+ 24.2 EUR
30+ 20.66 EUR
60+ 19.94 EUR
120+ 19.24 EUR
270+ 19.17 EUR
510+ 18.15 EUR
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