Suchergebnisse für "5n65" : > 60

Wählen Sie Seite:   1 2  Nächste Seite >> ]
Art der Ansicht :
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AIGB15N65H5ATMA1 AIGB15N65H5ATMA1 Infineon Technologies Infineon-AIGB15N65H5-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b6669e363172 Description: IGBT NPT 650V 30A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 24ns/22ns
Switching Energy: 160µJ (on), 40µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 40 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
Qualification: AEC-Q101
auf Bestellung 958 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.76 EUR
10+4.44 EUR
100+3.12 EUR
500+2.56 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
AIKB15N65DH5ATMA1 AIKB15N65DH5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IGBT NPT 650V 15A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+2.90 EUR
2000+2.88 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
AIKB15N65DH5ATMA1 AIKB15N65DH5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IGBT NPT 650V 15A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.01 EUR
10+5.30 EUR
100+3.76 EUR
500+3.11 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N65ZF1 BGH75N65ZF1 BASiC SEMICONDUCTOR BGH75N65ZF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-4
Mounting: THT
Kind of package: tube
Power dissipation: 405W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 444nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 84ns
Turn-off time: 565ns
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.76 EUR
7+11.17 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N65ZF1 BGH75N65ZF1 BASiC SEMICONDUCTOR BGH75N65ZF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-4
Mounting: THT
Kind of package: tube
Power dissipation: 405W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 444nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 84ns
Turn-off time: 565ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
5+15.76 EUR
7+11.17 EUR
150+10.74 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BIDW75N65EH5 BIDW75N65EH5 Bourns Bourns_01_17_2024_BIDW75N65EH5-3392669.pdf IGBTs IGBT Discrete 650V, 75A, High speed switching in TO-247-3L
auf Bestellung 2935 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.01 EUR
25+6.25 EUR
100+5.88 EUR
250+5.65 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCB125N65S3 FCB125N65S3 onsemi fcb125n65s3-d.pdf Description: MOSFET N-CH 650V 24A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 590µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 568 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.52 EUR
10+6.36 EUR
100+4.58 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FCH125N65S3R0-F155 FCH125N65S3R0-F155 onsemi fch125n65s3r0-d.pdf Description: MOSFET N-CH 650V 24A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.16 EUR
30+7.02 EUR
120+5.89 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FCH125N65S3R0-F155 FCH125N65S3R0-F155 onsemi fch125n65s3r0-d.pdf MOSFETs SUPERFET3 650V 24A 125 mOhm
auf Bestellung 448 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.33 EUR
10+8.24 EUR
30+6.30 EUR
120+5.42 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCH165N65S3R0-F155 FCH165N65S3R0-F155 onsemi fch165n65s3r0-d.pdf Description: MOSFET N-CH 650V 19A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 404 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.39 EUR
10+7.69 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FCH165N65S3R0-F155 FCH165N65S3R0-F155 onsemi fch165n65s3r0-d.pdf MOSFETs SF3 650V 165MOHM 19A
auf Bestellung 414 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.38 EUR
10+7.15 EUR
30+7.11 EUR
120+6.39 EUR
270+4.96 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCMT125N65S3 FCMT125N65S3 onsemi fcmt125n65s3-d.pdf Description: MOSFET N-CH 650V 24A 4PQFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 590µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 400 V
auf Bestellung 455 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.18 EUR
10+7.54 EUR
100+5.47 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FCP125N65S3 FCP125N65S3 onsemi fcp125n65s3-d.pdf Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 2265 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.78 EUR
50+4.59 EUR
100+4.19 EUR
500+3.48 EUR
1000+3.40 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FCP125N65S3 FCP125N65S3 onsemi fcp125n65s3-d.pdf MOSFETs SF3 650V 125MOHM E TO220
auf Bestellung 729 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.20 EUR
10+6.65 EUR
50+4.01 EUR
100+3.50 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCP125N65S3R0 FCP125N65S3R0 onsemi fcp125n65s3r0-d.pdf Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
2+8.94 EUR
50+4.68 EUR
100+4.27 EUR
500+3.55 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FCP165N65S3 FCP165N65S3 onsemi fcp165n65s3-d.pdf MOSFETs SUPERFET3 650V 19A 165 mOhm
auf Bestellung 896 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.49 EUR
10+5.47 EUR
50+3.77 EUR
100+3.47 EUR
250+3.45 EUR
500+3.13 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCPF125N65S3 FCPF125N65S3 onsemi fcpf125n65s3-d.pdf Description: MOSFET N-CH 650V 24A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 400 V
auf Bestellung 534 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.52 EUR
50+5.01 EUR
100+4.58 EUR
500+3.82 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FCPF125N65S3 FCPF125N65S3 onsemi / Fairchild fcpf125n65s3-d.pdf MOSFETs SuperFET3 650V 125 mOhm, TO220F PKG
auf Bestellung 1972 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.01 EUR
10+6.37 EUR
50+4.51 EUR
100+4.15 EUR
500+3.91 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCPF165N65S3L1-F154 FCPF165N65S3L1-F154 onsemi fcpf165n65s3l1-d.pdf Description: SF3 650V 165MOHM E TO220F
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tj)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 410µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
auf Bestellung 940 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.34 EUR
10+4.14 EUR
100+2.90 EUR
500+2.37 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FCPF165N65S3L1-F154 FCPF165N65S3L1-F154 onsemi FCPF165N65S3L1_D-2311889.pdf MOSFETs SF3 650V 165MOHM E TO220F
auf Bestellung 777 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.95 EUR
10+4.14 EUR
100+3.27 EUR
250+3.03 EUR
500+2.76 EUR
1000+2.32 EUR
2000+2.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDPF15N65 FDPF15N65 onsemi / Fairchild MOSFETs 650V 15A 0.44OHMS NCH POWER TRENCH
auf Bestellung 4465 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.12 EUR
10+4.51 EUR
50+2.53 EUR
100+2.39 EUR
250+2.38 EUR
500+2.18 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDPF15N65 FDPF15N65 onsemi Description: MOSFET N-CH 650V 15A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 7.5A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3095 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 351 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.18 EUR
50+3.14 EUR
100+2.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IGB15N65S5ATMA1 IGB15N65S5ATMA1 Infineon Technologies Infineon-IGB15N65S5-DataSheet-v02_02-EN.pdf?fileId=5546d4625e763904015ec7edd82b2f74 Description: IGBT TRENCH FS 650V 35A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/117ns
Switching Energy: 250µJ (on), 140µJ (off)
Test Condition: 400V, 15A, 25Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 105 W
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.45 EUR
10+2.87 EUR
100+1.97 EUR
500+1.58 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IGW75N65H5XKSA1 IGW75N65H5XKSA1 INFINEON TECHNOLOGIES IGW75N65H5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 198W
Gate charge: 160nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 61ns
Turn-off time: 215ns
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.76 EUR
16+4.58 EUR
17+4.33 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IGW75N65H5XKSA1 IGW75N65H5XKSA1 INFINEON TECHNOLOGIES IGW75N65H5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 198W
Gate charge: 160nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 61ns
Turn-off time: 215ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 33 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.76 EUR
16+4.58 EUR
17+4.33 EUR
1200+4.16 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IGW75N65H5XKSA1 IGW75N65H5XKSA1 Infineon Technologies Infineon-IGW75N65H5-DS-v02_01-EN.pdf?fileId=5546d4624d6fc3d5014df745d10c4394 Description: IGBT TRENCH 650V 120A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 28ns/174ns
Switching Energy: 2.25mJ (on), 950µJ (off)
Test Condition: 400V, 75A, 8Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 503 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.16 EUR
30+5.77 EUR
120+4.80 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IKA15N65ET6XKSA2 IKA15N65ET6XKSA2 INFINEON TECHNOLOGIES IKA15N65ET6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 11A; 22W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 22W
Case: TO220FP
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 57.5A
Collector-emitter voltage: 650V
Turn-on time: 50ns
Turn-off time: 202ns
Collector current: 11A
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: T6
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+23.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IKA15N65ET6XKSA2 IKA15N65ET6XKSA2 INFINEON TECHNOLOGIES IKA15N65ET6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 11A; 22W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 22W
Case: TO220FP
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 57.5A
Collector-emitter voltage: 650V
Turn-on time: 50ns
Turn-off time: 202ns
Collector current: 11A
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: T6
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
3+23.84 EUR
10+7.15 EUR
11+6.51 EUR
29+2.46 EUR
250+1.49 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IKA15N65F5XKSA1 IKA15N65F5XKSA1 Infineon Technologies DS_IKA15N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af98304715d4b Description: IGBT 650V 14A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO220-FP
Td (on/off) @ 25°C: 17ns/150ns
Switching Energy: 130µJ (on), 40µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 33.3 W
auf Bestellung 559 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.09 EUR
50+2.53 EUR
100+2.28 EUR
500+1.85 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IKB15N65EH5ATMA1 IKB15N65EH5ATMA1 Infineon Technologies Infineon-IKB15N65EH5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd1328dc4914 Description: IGBT TRENCH FS 650V 30A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/145ns
Switching Energy: 400µJ (on), 80µJ (off)
Test Condition: 400V, 15A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
auf Bestellung 875 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.05 EUR
10+3.95 EUR
100+2.76 EUR
500+2.25 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IKFW75N65ES5XKSA1 IKFW75N65ES5XKSA1 Infineon Technologies Infineon_IKFW75N65ES5_DataSheet_v02_01_EN-3362028.pdf IGBTs INDUSTRY 14
auf Bestellung 964 Stücke:
Lieferzeit 10-14 Tag (e)
1+14.89 EUR
10+13.13 EUR
25+9.43 EUR
100+8.41 EUR
240+8.29 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N65F5XKSA1 IKP15N65F5XKSA1 Infineon Technologies Infineon_IKP15N65F5_DS_v02_01_EN-1731657.pdf IGBTs IGBT PRODUCTS
auf Bestellung 770 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.45 EUR
10+2.13 EUR
100+1.97 EUR
500+1.76 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N65F5XKSA1 IKP15N65F5XKSA1 Infineon Technologies DS_IKP15N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af9faf0765e3f Description: IGBT 650V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 17ns/150ns
Switching Energy: 130µJ (on), 40µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
auf Bestellung 440 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.42 EUR
50+2.71 EUR
100+2.45 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N65H5XKSA1 IKP15N65H5XKSA1 INFINEON TECHNOLOGIES IKP15N65H5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 105W; TO220-3; H5
Type of transistor: IGBT
Power dissipation: 105W
Case: TO220-3
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 650V
Collector current: 15A
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.49 EUR
38+1.93 EUR
40+1.82 EUR
50+1.80 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N65H5XKSA1 IKP15N65H5XKSA1 INFINEON TECHNOLOGIES IKP15N65H5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 105W; TO220-3; H5
Type of transistor: IGBT
Power dissipation: 105W
Case: TO220-3
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 650V
Collector current: 15A
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 92 Stücke:
Lieferzeit 7-14 Tag (e)
29+2.49 EUR
38+1.93 EUR
40+1.82 EUR
50+1.80 EUR
100+1.76 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N65EL5XKSA1 IKW75N65EL5XKSA1 Infineon Technologies Infineon-IKW75N65EL5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd6e4e3acf Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 40ns/275ns
Switching Energy: 1.61mJ (on), 3.2mJ (off)
Test Condition: 400V, 75A, 4Ohm, 15V
Gate Charge: 436 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 536 W
auf Bestellung 410 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.78 EUR
30+7.38 EUR
120+6.20 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N65ES5XKSA1 IKW75N65ES5XKSA1 Infineon Technologies Infineon_IKW75N65ES5_DS_v02_02_EN-1226903.pdf IGBTs INDUSTRY 14
auf Bestellung 189 Stücke:
Lieferzeit 10-14 Tag (e)
1+11.21 EUR
10+11.18 EUR
25+5.90 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N65ES5XKSA1 IKW75N65ES5XKSA1 Infineon Technologies Infineon-IKW75N65ES5-DS-v02_02-EN.pdf?fileId=5546d4624fb7fef201501842e2da19c8 Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 85 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 40ns/144ns
Switching Energy: 2.4mJ (on), 950µJ (off)
Test Condition: 400V, 75A, 18Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 5394 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.30 EUR
30+6.47 EUR
120+5.41 EUR
510+4.63 EUR
1020+4.57 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N65ET7XKSA1 IKW75N65ET7XKSA1 Infineon Technologies Infineon-IKW75N65ET7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a017351bee5af57fb Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/310ns
Switching Energy: 2.17mJ (on), 1.23mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 435 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 333 W
Qualification: AEC-Q101
auf Bestellung 429 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.59 EUR
30+5.90 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N65ET7XKSA1 IKW75N65ET7XKSA1 Infineon Technologies Infineon_IKW75N65ET7_DataSheet_v01_10_EN-3361891.pdf IGBTs 650 V, 75 A IGBT with anti-parallel diode in TO-247 package
auf Bestellung 406 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.59 EUR
10+8.57 EUR
25+6.09 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N65SS5XKSA1 IKW75N65SS5XKSA1 Infineon Technologies Infineon-IKW75N65SS5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc2833db31af Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/145ns
Switching Energy: 450µJ (on), 750µJ (off)
Test Condition: 400V, 75A, 5.6Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
1+24.08 EUR
30+14.69 EUR
120+12.64 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKWH75N65EH7XKSA1 IKWH75N65EH7XKSA1 Infineon Technologies Infineon_IKWH75N65EH7_DataSheet_v01_20_EN-3422000.pdf IGBTs 650 V, 75 A IGBT with anti-parallel diode in TO-247-3 HCC package
auf Bestellung 133 Stücke:
Lieferzeit 10-14 Tag (e)
1+13.50 EUR
25+8.61 EUR
100+7.30 EUR
240+6.11 EUR
480+5.88 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKZA75N65EH7XKSA1 IKZA75N65EH7XKSA1 Infineon Technologies Infineon_IKZA75N65EH7_DataSheet_v01_10_EN-3422433.pdf IGBTs 650 V, 75 A IGBT with anti-parallel diode in TO247-4 package
auf Bestellung 116 Stücke:
Lieferzeit 10-14 Tag (e)
1+13.31 EUR
10+11.69 EUR
25+8.64 EUR
100+7.44 EUR
240+7.15 EUR
480+7.02 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKZA75N65RH5XKSA1 IKZA75N65RH5XKSA1 Infineon Technologies Infineon_IKZA75N65RH5_DataSheet_v01_10_EN-3362098.pdf IGBTs 650 V, 75 A IGBT Discrete with Silicon Carbide Schottky diode
auf Bestellung 299 Stücke:
Lieferzeit 10-14 Tag (e)
1+12.09 EUR
10+12.06 EUR
25+8.89 EUR
100+8.24 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKZA75N65SS5XKSA1 IKZA75N65SS5XKSA1 Infineon Technologies Infineon_IKZA75N65SS5_DataSheet_v01_10_EN-3362100.pdf IGBTs 650 V, 75 A IGBT Discrete with Silicon Carbide Schottky diode
auf Bestellung 526 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.47 EUR
10+19.78 EUR
25+13.13 EUR
50+13.11 EUR
100+12.43 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKZA75N65SS5XKSA1 IKZA75N65SS5XKSA1 Infineon Technologies Infineon-IKZA75N65SS5-DataSheet-v02_02-EN.pdf?fileId=5546d46275b79adb0175dc288d0031be Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 75A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/145ns
Switching Energy: 240µJ (on), 750µJ (off)
Test Condition: 400V, 75A, 5.6Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 201 Stücke:
Lieferzeit 10-14 Tag (e)
1+23.60 EUR
30+14.37 EUR
120+12.35 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXYA15N65C3D1 IXYA15N65C3D1 IXYS IXYA(P)15N65C3D1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 102ns
auf Bestellung 227 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.37 EUR
24+3.05 EUR
30+2.42 EUR
32+2.29 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IXYA15N65C3D1 IXYA15N65C3D1 IXYS IXYA(P)15N65C3D1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 102ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 227 Stücke:
Lieferzeit 7-14 Tag (e)
22+3.37 EUR
24+3.05 EUR
30+2.42 EUR
32+2.29 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IXYA55N65B5 IXYA55N65B5 IXYS IGBTs 650V, 55A, XPT Gen5 B5 IGBT in TO-263
auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.82 EUR
10+8.62 EUR
50+7.30 EUR
100+6.65 EUR
250+6.28 EUR
500+5.90 EUR
1000+5.07 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXYH75N65C3H1 IXYH75N65C3H1 IXYS media-3319727.pdf IGBTs 650V/170A XPT C3-Class TO-247
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
1+28.21 EUR
10+24.64 EUR
30+21.56 EUR
60+20.72 EUR
120+15.26 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NGTB75N65FL2WG NGTB75N65FL2WG onsemi ngtb75n65fl2w-d.pdf Description: IGBT TRENCH FS 650V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 110ns/270ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 595 W
auf Bestellung 418 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.68 EUR
30+9.86 EUR
120+8.36 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NTB095N65S3HF NTB095N65S3HF onsemi ntb095n65s3hf-d.pdf Description: MOSFET N-CH 650V 36A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+5.54 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
NTB095N65S3HF NTB095N65S3HF onsemi ntb095n65s3hf-d.pdf Description: MOSFET N-CH 650V 36A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.67 EUR
10+8.60 EUR
100+6.30 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NTB095N65S3HF NTB095N65S3HF onsemi ntb095n65s3hf-d.pdf MOSFETs SUPERFET3 650V FRFET 95MO
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.77 EUR
10+7.62 EUR
25+7.60 EUR
100+5.77 EUR
250+5.76 EUR
800+5.72 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTHL065N65S3F NTHL065N65S3F onsemi nthl065n65s3f-d.pdf Description: MOSFET N-CH 650V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 10V
Power Dissipation (Max): 337W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4.6mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 400 V
auf Bestellung 104686 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.17 EUR
30+12.78 EUR
120+10.93 EUR
510+10.45 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTHL065N65S3HF NTHL065N65S3HF onsemi nthl065n65s3hf-d.pdf Description: MOSFET N-CH 650V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 10V
Power Dissipation (Max): 337W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.3mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 400 V
auf Bestellung 43518 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.01 EUR
30+10.63 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NTHL065N65S3HF NTHL065N65S3HF onsemi nthl065n65s3hf-d.pdf MOSFETs MOSFET, Power, N-Channel, SUPERFET III, FRFET, 650 V, 46 A, 65 mohm, TO-247
auf Bestellung 455 Stücke:
Lieferzeit 10-14 Tag (e)
1+12.58 EUR
10+10.98 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTHL095N65S3H NTHL095N65S3H onsemi nthl095n65s3h-d.pdf Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.8mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V
auf Bestellung 1576 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.29 EUR
30+8.36 EUR
120+7.06 EUR
510+6.50 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NTHL095N65S3H NTHL095N65S3H onsemi nthl095n65s3h-d.pdf MOSFETs Power MOSFET, N-Channel, SUPERFET III, FAST, 650 V, 30 A, 95 mohm, TO-247
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.73 EUR
10+7.08 EUR
120+6.71 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTHL095N65S3HF NTHL095N65S3HF onsemi nthl095n65s3hf-d.pdf Description: MOSFET N-CH 650V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V
auf Bestellung 766 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.75 EUR
30+6.86 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
AIGB15N65H5ATMA1 Infineon-AIGB15N65H5-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b6669e363172
AIGB15N65H5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 30A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 24ns/22ns
Switching Energy: 160µJ (on), 40µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 40 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
Qualification: AEC-Q101
auf Bestellung 958 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.76 EUR
10+4.44 EUR
100+3.12 EUR
500+2.56 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
AIKB15N65DH5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIKB15N65DH5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 15A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.90 EUR
2000+2.88 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
AIKB15N65DH5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIKB15N65DH5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 15A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.01 EUR
10+5.30 EUR
100+3.76 EUR
500+3.11 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N65ZF1 BGH75N65ZF1.pdf
BGH75N65ZF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-4
Mounting: THT
Kind of package: tube
Power dissipation: 405W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 444nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 84ns
Turn-off time: 565ns
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.76 EUR
7+11.17 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BGH75N65ZF1 BGH75N65ZF1.pdf
BGH75N65ZF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-4
Mounting: THT
Kind of package: tube
Power dissipation: 405W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 444nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 84ns
Turn-off time: 565ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+15.76 EUR
7+11.17 EUR
150+10.74 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BIDW75N65EH5 Bourns_01_17_2024_BIDW75N65EH5-3392669.pdf
BIDW75N65EH5
Hersteller: Bourns
IGBTs IGBT Discrete 650V, 75A, High speed switching in TO-247-3L
auf Bestellung 2935 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.01 EUR
25+6.25 EUR
100+5.88 EUR
250+5.65 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCB125N65S3 fcb125n65s3-d.pdf
FCB125N65S3
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 590µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 568 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.52 EUR
10+6.36 EUR
100+4.58 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FCH125N65S3R0-F155 fch125n65s3r0-d.pdf
FCH125N65S3R0-F155
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.16 EUR
30+7.02 EUR
120+5.89 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FCH125N65S3R0-F155 fch125n65s3r0-d.pdf
FCH125N65S3R0-F155
Hersteller: onsemi
MOSFETs SUPERFET3 650V 24A 125 mOhm
auf Bestellung 448 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.33 EUR
10+8.24 EUR
30+6.30 EUR
120+5.42 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCH165N65S3R0-F155 fch165n65s3r0-d.pdf
FCH165N65S3R0-F155
Hersteller: onsemi
Description: MOSFET N-CH 650V 19A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 404 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.39 EUR
10+7.69 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FCH165N65S3R0-F155 fch165n65s3r0-d.pdf
FCH165N65S3R0-F155
Hersteller: onsemi
MOSFETs SF3 650V 165MOHM 19A
auf Bestellung 414 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.38 EUR
10+7.15 EUR
30+7.11 EUR
120+6.39 EUR
270+4.96 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCMT125N65S3 fcmt125n65s3-d.pdf
FCMT125N65S3
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A 4PQFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 590µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 400 V
auf Bestellung 455 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.18 EUR
10+7.54 EUR
100+5.47 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FCP125N65S3 fcp125n65s3-d.pdf
FCP125N65S3
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 2265 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.78 EUR
50+4.59 EUR
100+4.19 EUR
500+3.48 EUR
1000+3.40 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FCP125N65S3 fcp125n65s3-d.pdf
FCP125N65S3
Hersteller: onsemi
MOSFETs SF3 650V 125MOHM E TO220
auf Bestellung 729 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.20 EUR
10+6.65 EUR
50+4.01 EUR
100+3.50 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCP125N65S3R0 fcp125n65s3r0-d.pdf
FCP125N65S3R0
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.94 EUR
50+4.68 EUR
100+4.27 EUR
500+3.55 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FCP165N65S3 fcp165n65s3-d.pdf
FCP165N65S3
Hersteller: onsemi
MOSFETs SUPERFET3 650V 19A 165 mOhm
auf Bestellung 896 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.49 EUR
10+5.47 EUR
50+3.77 EUR
100+3.47 EUR
250+3.45 EUR
500+3.13 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCPF125N65S3 fcpf125n65s3-d.pdf
FCPF125N65S3
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 400 V
auf Bestellung 534 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.52 EUR
50+5.01 EUR
100+4.58 EUR
500+3.82 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FCPF125N65S3 fcpf125n65s3-d.pdf
FCPF125N65S3
Hersteller: onsemi / Fairchild
MOSFETs SuperFET3 650V 125 mOhm, TO220F PKG
auf Bestellung 1972 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.01 EUR
10+6.37 EUR
50+4.51 EUR
100+4.15 EUR
500+3.91 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCPF165N65S3L1-F154 fcpf165n65s3l1-d.pdf
FCPF165N65S3L1-F154
Hersteller: onsemi
Description: SF3 650V 165MOHM E TO220F
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tj)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 410µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
auf Bestellung 940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.34 EUR
10+4.14 EUR
100+2.90 EUR
500+2.37 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FCPF165N65S3L1-F154 FCPF165N65S3L1_D-2311889.pdf
FCPF165N65S3L1-F154
Hersteller: onsemi
MOSFETs SF3 650V 165MOHM E TO220F
auf Bestellung 777 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.95 EUR
10+4.14 EUR
100+3.27 EUR
250+3.03 EUR
500+2.76 EUR
1000+2.32 EUR
2000+2.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDPF15N65
FDPF15N65
Hersteller: onsemi / Fairchild
MOSFETs 650V 15A 0.44OHMS NCH POWER TRENCH
auf Bestellung 4465 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.12 EUR
10+4.51 EUR
50+2.53 EUR
100+2.39 EUR
250+2.38 EUR
500+2.18 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDPF15N65
FDPF15N65
Hersteller: onsemi
Description: MOSFET N-CH 650V 15A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 7.5A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3095 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 351 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.18 EUR
50+3.14 EUR
100+2.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IGB15N65S5ATMA1 Infineon-IGB15N65S5-DataSheet-v02_02-EN.pdf?fileId=5546d4625e763904015ec7edd82b2f74
IGB15N65S5ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 35A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/117ns
Switching Energy: 250µJ (on), 140µJ (off)
Test Condition: 400V, 15A, 25Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 105 W
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.45 EUR
10+2.87 EUR
100+1.97 EUR
500+1.58 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IGW75N65H5XKSA1 IGW75N65H5.pdf
IGW75N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 198W
Gate charge: 160nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 61ns
Turn-off time: 215ns
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.76 EUR
16+4.58 EUR
17+4.33 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IGW75N65H5XKSA1 IGW75N65H5.pdf
IGW75N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 198W
Gate charge: 160nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 61ns
Turn-off time: 215ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 33 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.76 EUR
16+4.58 EUR
17+4.33 EUR
1200+4.16 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IGW75N65H5XKSA1 Infineon-IGW75N65H5-DS-v02_01-EN.pdf?fileId=5546d4624d6fc3d5014df745d10c4394
IGW75N65H5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 120A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 28ns/174ns
Switching Energy: 2.25mJ (on), 950µJ (off)
Test Condition: 400V, 75A, 8Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 503 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.16 EUR
30+5.77 EUR
120+4.80 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IKA15N65ET6XKSA2 IKA15N65ET6.pdf
IKA15N65ET6XKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 11A; 22W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 22W
Case: TO220FP
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 57.5A
Collector-emitter voltage: 650V
Turn-on time: 50ns
Turn-off time: 202ns
Collector current: 11A
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: T6
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IKA15N65ET6XKSA2 IKA15N65ET6.pdf
IKA15N65ET6XKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 11A; 22W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 22W
Case: TO220FP
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 57.5A
Collector-emitter voltage: 650V
Turn-on time: 50ns
Turn-off time: 202ns
Collector current: 11A
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: T6
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
3+23.84 EUR
10+7.15 EUR
11+6.51 EUR
29+2.46 EUR
250+1.49 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IKA15N65F5XKSA1 DS_IKA15N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af98304715d4b
IKA15N65F5XKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 14A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO220-FP
Td (on/off) @ 25°C: 17ns/150ns
Switching Energy: 130µJ (on), 40µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 33.3 W
auf Bestellung 559 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.09 EUR
50+2.53 EUR
100+2.28 EUR
500+1.85 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IKB15N65EH5ATMA1 Infineon-IKB15N65EH5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd1328dc4914
IKB15N65EH5ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 30A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/145ns
Switching Energy: 400µJ (on), 80µJ (off)
Test Condition: 400V, 15A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
auf Bestellung 875 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.05 EUR
10+3.95 EUR
100+2.76 EUR
500+2.25 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IKFW75N65ES5XKSA1 Infineon_IKFW75N65ES5_DataSheet_v02_01_EN-3362028.pdf
IKFW75N65ES5XKSA1
Hersteller: Infineon Technologies
IGBTs INDUSTRY 14
auf Bestellung 964 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+14.89 EUR
10+13.13 EUR
25+9.43 EUR
100+8.41 EUR
240+8.29 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N65F5XKSA1 Infineon_IKP15N65F5_DS_v02_01_EN-1731657.pdf
IKP15N65F5XKSA1
Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS
auf Bestellung 770 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.45 EUR
10+2.13 EUR
100+1.97 EUR
500+1.76 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N65F5XKSA1 DS_IKP15N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af9faf0765e3f
IKP15N65F5XKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 17ns/150ns
Switching Energy: 130µJ (on), 40µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
auf Bestellung 440 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.42 EUR
50+2.71 EUR
100+2.45 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N65H5XKSA1 IKP15N65H5-DTE.pdf
IKP15N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 105W; TO220-3; H5
Type of transistor: IGBT
Power dissipation: 105W
Case: TO220-3
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 650V
Collector current: 15A
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.49 EUR
38+1.93 EUR
40+1.82 EUR
50+1.80 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N65H5XKSA1 IKP15N65H5-DTE.pdf
IKP15N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 105W; TO220-3; H5
Type of transistor: IGBT
Power dissipation: 105W
Case: TO220-3
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 650V
Collector current: 15A
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 92 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
29+2.49 EUR
38+1.93 EUR
40+1.82 EUR
50+1.80 EUR
100+1.76 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N65EL5XKSA1 Infineon-IKW75N65EL5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd6e4e3acf
IKW75N65EL5XKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 40ns/275ns
Switching Energy: 1.61mJ (on), 3.2mJ (off)
Test Condition: 400V, 75A, 4Ohm, 15V
Gate Charge: 436 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 536 W
auf Bestellung 410 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.78 EUR
30+7.38 EUR
120+6.20 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N65ES5XKSA1 Infineon_IKW75N65ES5_DS_v02_02_EN-1226903.pdf
IKW75N65ES5XKSA1
Hersteller: Infineon Technologies
IGBTs INDUSTRY 14
auf Bestellung 189 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+11.21 EUR
10+11.18 EUR
25+5.90 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N65ES5XKSA1 Infineon-IKW75N65ES5-DS-v02_02-EN.pdf?fileId=5546d4624fb7fef201501842e2da19c8
IKW75N65ES5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 85 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 40ns/144ns
Switching Energy: 2.4mJ (on), 950µJ (off)
Test Condition: 400V, 75A, 18Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 5394 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.30 EUR
30+6.47 EUR
120+5.41 EUR
510+4.63 EUR
1020+4.57 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N65ET7XKSA1 Infineon-IKW75N65ET7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a017351bee5af57fb
IKW75N65ET7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/310ns
Switching Energy: 2.17mJ (on), 1.23mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 435 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 333 W
Qualification: AEC-Q101
auf Bestellung 429 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.59 EUR
30+5.90 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N65ET7XKSA1 Infineon_IKW75N65ET7_DataSheet_v01_10_EN-3361891.pdf
IKW75N65ET7XKSA1
Hersteller: Infineon Technologies
IGBTs 650 V, 75 A IGBT with anti-parallel diode in TO-247 package
auf Bestellung 406 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.59 EUR
10+8.57 EUR
25+6.09 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N65SS5XKSA1 Infineon-IKW75N65SS5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc2833db31af
IKW75N65SS5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/145ns
Switching Energy: 450µJ (on), 750µJ (off)
Test Condition: 400V, 75A, 5.6Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.08 EUR
30+14.69 EUR
120+12.64 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKWH75N65EH7XKSA1 Infineon_IKWH75N65EH7_DataSheet_v01_20_EN-3422000.pdf
IKWH75N65EH7XKSA1
Hersteller: Infineon Technologies
IGBTs 650 V, 75 A IGBT with anti-parallel diode in TO-247-3 HCC package
auf Bestellung 133 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+13.50 EUR
25+8.61 EUR
100+7.30 EUR
240+6.11 EUR
480+5.88 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKZA75N65EH7XKSA1 Infineon_IKZA75N65EH7_DataSheet_v01_10_EN-3422433.pdf
IKZA75N65EH7XKSA1
Hersteller: Infineon Technologies
IGBTs 650 V, 75 A IGBT with anti-parallel diode in TO247-4 package
auf Bestellung 116 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+13.31 EUR
10+11.69 EUR
25+8.64 EUR
100+7.44 EUR
240+7.15 EUR
480+7.02 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKZA75N65RH5XKSA1 Infineon_IKZA75N65RH5_DataSheet_v01_10_EN-3362098.pdf
IKZA75N65RH5XKSA1
Hersteller: Infineon Technologies
IGBTs 650 V, 75 A IGBT Discrete with Silicon Carbide Schottky diode
auf Bestellung 299 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+12.09 EUR
10+12.06 EUR
25+8.89 EUR
100+8.24 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKZA75N65SS5XKSA1 Infineon_IKZA75N65SS5_DataSheet_v01_10_EN-3362100.pdf
IKZA75N65SS5XKSA1
Hersteller: Infineon Technologies
IGBTs 650 V, 75 A IGBT Discrete with Silicon Carbide Schottky diode
auf Bestellung 526 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.47 EUR
10+19.78 EUR
25+13.13 EUR
50+13.11 EUR
100+12.43 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKZA75N65SS5XKSA1 Infineon-IKZA75N65SS5-DataSheet-v02_02-EN.pdf?fileId=5546d46275b79adb0175dc288d0031be
IKZA75N65SS5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 75A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/145ns
Switching Energy: 240µJ (on), 750µJ (off)
Test Condition: 400V, 75A, 5.6Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 201 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+23.60 EUR
30+14.37 EUR
120+12.35 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXYA15N65C3D1 IXYA(P)15N65C3D1.pdf
IXYA15N65C3D1
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 102ns
auf Bestellung 227 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.37 EUR
24+3.05 EUR
30+2.42 EUR
32+2.29 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IXYA15N65C3D1 IXYA(P)15N65C3D1.pdf
IXYA15N65C3D1
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 102ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 227 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
22+3.37 EUR
24+3.05 EUR
30+2.42 EUR
32+2.29 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IXYA55N65B5
IXYA55N65B5
Hersteller: IXYS
IGBTs 650V, 55A, XPT Gen5 B5 IGBT in TO-263
auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.82 EUR
10+8.62 EUR
50+7.30 EUR
100+6.65 EUR
250+6.28 EUR
500+5.90 EUR
1000+5.07 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXYH75N65C3H1 media-3319727.pdf
IXYH75N65C3H1
Hersteller: IXYS
IGBTs 650V/170A XPT C3-Class TO-247
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.21 EUR
10+24.64 EUR
30+21.56 EUR
60+20.72 EUR
120+15.26 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NGTB75N65FL2WG ngtb75n65fl2w-d.pdf
NGTB75N65FL2WG
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 110ns/270ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 595 W
auf Bestellung 418 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.68 EUR
30+9.86 EUR
120+8.36 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NTB095N65S3HF ntb095n65s3hf-d.pdf
NTB095N65S3HF
Hersteller: onsemi
Description: MOSFET N-CH 650V 36A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+5.54 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
NTB095N65S3HF ntb095n65s3hf-d.pdf
NTB095N65S3HF
Hersteller: onsemi
Description: MOSFET N-CH 650V 36A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.67 EUR
10+8.60 EUR
100+6.30 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NTB095N65S3HF ntb095n65s3hf-d.pdf
NTB095N65S3HF
Hersteller: onsemi
MOSFETs SUPERFET3 650V FRFET 95MO
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.77 EUR
10+7.62 EUR
25+7.60 EUR
100+5.77 EUR
250+5.76 EUR
800+5.72 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTHL065N65S3F nthl065n65s3f-d.pdf
NTHL065N65S3F
Hersteller: onsemi
Description: MOSFET N-CH 650V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 10V
Power Dissipation (Max): 337W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4.6mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 400 V
auf Bestellung 104686 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.17 EUR
30+12.78 EUR
120+10.93 EUR
510+10.45 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTHL065N65S3HF nthl065n65s3hf-d.pdf
NTHL065N65S3HF
Hersteller: onsemi
Description: MOSFET N-CH 650V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 10V
Power Dissipation (Max): 337W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.3mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 400 V
auf Bestellung 43518 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.01 EUR
30+10.63 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NTHL065N65S3HF nthl065n65s3hf-d.pdf
NTHL065N65S3HF
Hersteller: onsemi
MOSFETs MOSFET, Power, N-Channel, SUPERFET III, FRFET, 650 V, 46 A, 65 mohm, TO-247
auf Bestellung 455 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+12.58 EUR
10+10.98 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTHL095N65S3H nthl095n65s3h-d.pdf
NTHL095N65S3H
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.8mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V
auf Bestellung 1576 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.29 EUR
30+8.36 EUR
120+7.06 EUR
510+6.50 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NTHL095N65S3H nthl095n65s3h-d.pdf
NTHL095N65S3H
Hersteller: onsemi
MOSFETs Power MOSFET, N-Channel, SUPERFET III, FAST, 650 V, 30 A, 95 mohm, TO-247
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.73 EUR
10+7.08 EUR
120+6.71 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTHL095N65S3HF nthl095n65s3hf-d.pdf
NTHL095N65S3HF
Hersteller: onsemi
Description: MOSFET N-CH 650V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V
auf Bestellung 766 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.75 EUR
30+6.86 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   1 2  Nächste Seite >> ]