Suchergebnisse für "5n65" : > 60
Wählen Sie Seite:
1
2
[ Nächste Seite >> ]
Art der Ansicht :
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 37 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 52 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 90 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 90 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 16 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 16 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 16 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
BGH75N65ZF1 | BASiC SEMICONDUCTOR |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 405W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 444nC Kind of package: tube Turn-on time: 84ns Turn-off time: 565ns Technology: Field Stop; SiC SBD; Trench Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
BIDW75N65EH5 | Bourns |
IGBTs IGBT Discrete 650V, 75A, High speed switching in TO-247-3L |
auf Bestellung 5797 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
CXG75N65HS | Createk Microelectronics |
Transistor IGBT ; 650V; 30V; 150A; 300A; 625W; 4,0V~5,5V; 340nC; -55°C~150°C; CXG75N65HS CREATEK TCXG75n65hs Anzahl je Verpackung: 5 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
|
DI7A5N65D2K | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 25A; 62.5W; ESD Type of transistor: N-MOSFET Power dissipation: 62.5W Case: D2PAK; TO263AB Mounting: SMD Gate charge: 18.4nC Kind of package: reel; tape Pulsed drain current: 25A Polarisation: unipolar Version: ESD Drain current: 4.7A Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±30V On-state resistance: 0.43Ω |
auf Bestellung 37 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
FCH125N65S3R0-F155 | onsemi |
Description: MOSFET N-CH 650V 24A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 181W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.4mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V |
auf Bestellung 432 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
FCH165N65S3R0-F155 | onsemi |
MOSFETs SF3 650V 165MOHM 19A |
auf Bestellung 414 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
FCH165N65S3R0-F155 | onsemi |
Description: MOSFET N-CH 650V 19A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V Power Dissipation (Max): 154W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.9mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V |
auf Bestellung 304 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
FCMT125N65S3 | onsemi |
Description: MOSFET N-CH 650V 24A 4PQFN Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 181W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 590µA Supplier Device Package: 4-PQFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 400 V |
auf Bestellung 1827 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
FCP125N65S3 | onsemi |
Description: MOSFET N-CH 650V 24A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 181W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.4mA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V |
auf Bestellung 2265 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
FCP125N65S3 | onsemi |
MOSFETs SF3 650V 125MOHM E TO220 |
auf Bestellung 352 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
FCP125N65S3R0 | onsemi |
MOSFETs SUPERFET3 650V 24A 125 mOhm |
auf Bestellung 1584 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
FCP125N65S3R0 | onsemi |
Description: MOSFET N-CH 650V 24A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 181W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.4mA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V |
auf Bestellung 725 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
FCP165N65S3 | onsemi |
Description: MOSFET N-CH 650V 19A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V Power Dissipation (Max): 154W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.9mA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V |
auf Bestellung 767 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
FCP165N65S3 | onsemi |
MOSFETs SUPERFET3 650V 19A 165 mOhm |
auf Bestellung 801 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
FCPF125N65S3 | onsemi |
Description: MOSFET N-CH 650V 24A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.4mA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 400 V |
auf Bestellung 399 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
FCPF125N65S3 | onsemi |
MOSFETs SuperFET3 650V 125 mOhm, TO220F PKG |
auf Bestellung 1372 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
FCPF165N65S3L1-F154 | onsemi |
MOSFETs SF3 650V 165MOHM E TO220F |
auf Bestellung 580 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
FCPF165N65S3L1-F154 | onsemi |
Description: SF3 650V 165MOHM E TO220F Packaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tj) Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 410µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V |
auf Bestellung 813 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
FDPF15N65 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 9.5A; Idm: 60A; 38.5W; TO220FP Type of transistor: N-MOSFET Power dissipation: 38.5W Case: TO220FP Mounting: THT Gate charge: 63nC Kind of package: tube Pulsed drain current: 60A Polarisation: unipolar Drain current: 9.5A Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±30V On-state resistance: 440mΩ |
auf Bestellung 215 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
FDPF15N65 | onsemi | MOSFETs 650V 15A 0.44OHMS NCH POWER TRENCH |
auf Bestellung 3656 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
GC125N65FF | GOFORD SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 25A; 42W; TO220F Type of transistor: N-MOSFET Power dissipation: 42W Case: TO220F Mounting: THT Gate charge: 52nC Polarisation: unipolar Technology: SJ-MOSFET Drain current: 25A Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±30V |
auf Bestellung 911 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
IGB15N65S5ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 35A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A Supplier Device Package: PG-TO263-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 12ns/117ns Switching Energy: 250µJ (on), 140µJ (off) Test Condition: 400V, 15A, 25Ohm, 15V Gate Charge: 38 nC Part Status: Active Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 105 W |
auf Bestellung 933 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
IGW75N65H5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 198W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 160nC Kind of package: tube Turn-on time: 61ns Turn-off time: 215ns Technology: TRENCHSTOP™ 5 |
auf Bestellung 74 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
IGW75N65H5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH 650V 120A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Td (on/off) @ 25°C: 28ns/174ns Switching Energy: 2.25mJ (on), 950µJ (off) Test Condition: 400V, 75A, 8Ohm, 15V Gate Charge: 160 nC Part Status: Active Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 395 W |
auf Bestellung 245 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
IKA15N65F5 | Infineon Technologies |
IGBTs ENGINEERING SAMPLES TRENCHSTOP-5 IGBT |
auf Bestellung 302 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
IKA15N65F5XKSA1 | Infineon Technologies |
Description: IGBT 650V 14A TO220-FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: PG-TO220-FP Td (on/off) @ 25°C: 17ns/150ns Switching Energy: 130µJ (on), 40µJ (off) Test Condition: 400V, 7.5A, 39Ohm, 15V Gate Charge: 38 nC Part Status: Active Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 33.3 W |
auf Bestellung 505 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
IKB15N65EH5ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 30A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 16ns/145ns Switching Energy: 400µJ (on), 80µJ (off) Test Condition: 400V, 15A, 39Ohm, 15V Gate Charge: 38 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 105 W |
auf Bestellung 603 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
IKW75N65EH5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 198W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 160nC Kind of package: tube Manufacturer series: H5 Turn-on time: 61ns Turn-off time: 215ns Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
IKW75N65EL5XKSA1 | Infineon Technologies |
Description: IGBT 650V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 114 ns Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 40ns/275ns Switching Energy: 1.61mJ (on), 3.2mJ (off) Test Condition: 400V, 75A, 4Ohm, 15V Gate Charge: 436 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 536 W |
auf Bestellung 1470 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
IKW75N65ES5 | Infineon Technologies |
IGBTs Trenchstop 5 IGBT |
auf Bestellung 795 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
IKW75N65ES5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 197W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 197W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 164nC Kind of package: tube Turn-on time: 86ns Turn-off time: 185ns Technology: TRENCHSTOP™ 5 Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
IKW75N65ET7XKSA1 | Infineon Technologies |
IGBTs 650 V, 75 A IGBT with anti-parallel diode in TO-247 package |
auf Bestellung 836 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
IKW75N65ET7XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 28ns/310ns Switching Energy: 2.17mJ (on), 1.23mJ (off) Test Condition: 400V, 75A, 4.7Ohm, 15V Gate Charge: 435 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 225 A Power - Max: 333 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 252 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
IKW75N65RH5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 26ns/180ns Switching Energy: 360µJ (on), 300µJ (off) Test Condition: 400V, 37.5A, 9Ohm, 15V Gate Charge: 168 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 395 W |
auf Bestellung 277 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
IKZ75N65EH5XKSA1 | Infineon Technologies |
IGBTs IGBT PRODUCTS |
auf Bestellung 423 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
IKZ75N65EH5XKSA1 | Infineon Technologies |
Description: IGBT 650V 90A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: PG-TO247-4 Td (on/off) @ 25°C: 26ns/347ns Switching Energy: 680µJ (on), 430µJ (off) Test Condition: 400V, 37.5A, 10Ohm, 15V Gate Charge: 166 nC Part Status: Active Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 395 W |
auf Bestellung 185 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
IKZ75N65EL5XKSA1 | Infineon Technologies |
Description: IGBT 650V 100A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 59 ns Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A Supplier Device Package: PG-TO247-4 Td (on/off) @ 25°C: 120ns/275ns Switching Energy: 1.57mJ (on), 3.2mJ (off) Test Condition: 400V, 75A, 23Ohm, 15V Gate Charge: 436 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 536 W |
auf Bestellung 196 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
IKZ75N65EL5XKSA1 | Infineon Technologies |
IGBTs IGBT PRODUCTS |
auf Bestellung 1045 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
IKZA75N65RH5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 80A TO247-4 Packaging: Bulk Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: PG-TO247-4-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 25ns/180ns Switching Energy: 310µJ (on), 300µJ (off) Test Condition: 400V, 37.5A, 9Ohm, 15V Gate Charge: 168 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 395 W |
auf Bestellung 2896 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
IKZA75N65RH5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 80A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: PG-TO247-4-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 25ns/180ns Switching Energy: 310µJ (on), 300µJ (off) Test Condition: 400V, 37.5A, 9Ohm, 15V Gate Charge: 168 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 395 W |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
IKZA75N65SS5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 80A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 75A Supplier Device Package: PG-TO247-4-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/145ns Switching Energy: 240µJ (on), 750µJ (off) Test Condition: 400V, 75A, 5.6Ohm, 15V Gate Charge: 164 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 395 W |
auf Bestellung 101 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
IKZA75N65SS5XKSA1 | Infineon Technologies |
IGBTs 650 V, 75 A IGBT Discrete with Silicon Carbide Schottky diode |
auf Bestellung 376 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
IXYA15N65C3D1 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 200W Case: TO263 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: SMD Gate charge: 19nC Kind of package: tube Turn-on time: 36ns Turn-off time: 102ns Technology: GenX3™; Planar; XPT™ |
auf Bestellung 149 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
IXYA55N65B5 | IXYS |
IGBTs 650V, 55A, XPT Gen5 B5 IGBT in TO-263 |
auf Bestellung 77 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
IXYH75N65C3H1 | IXYS |
IGBTs 650V/170A XPT C3-Class TO-247 |
auf Bestellung 172 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
LGEGB15N65T2 | LUGUANG ELECTRONIC |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 15A; 125W; TO263 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 125W Case: TO263 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Turn-on time: 40ns Turn-off time: 150ns Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 558 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
LGEGP15N65T2 | LUGUANG ELECTRONIC |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 15A; 125W; TO220 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 125W Case: TO220 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 45nC Kind of package: tube Turn-on time: 40ns Turn-off time: 150ns Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 124 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
LGEGW75N65F | LUGUANG ELECTRONIC |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 71W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 71W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 300A Mounting: THT Gate charge: 192nC Kind of package: tube Turn-on time: 161ns Turn-off time: 274ns Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 114 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
LGEGW75N65FP | LUGUANG ELECTRONIC |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 500W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 500W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 130nC Kind of package: tube Turn-on time: 215ns Turn-off time: 225ns Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 139 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
LGEGW75N65S | LUGUANG ELECTRONIC |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 250W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 250W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 300A Mounting: THT Gate charge: 340nC Kind of package: tube Turn-on time: 156ns Turn-off time: 348ns Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
NGTB35N65FL2WG | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 35A; 150W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 35A Power dissipation: 150W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 125nC Kind of package: tube |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
NGTB75N65FL2WG | onsemi |
Description: IGBT TRENCH FS 650V 100A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 80 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 110ns/270ns Switching Energy: 1.5mJ (on), 1mJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 310 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 595 W |
auf Bestellung 198 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
NTB095N65S3HF | onsemi |
MOSFETs SUPERFET3 650V FRFET 95MO |
auf Bestellung 773 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
NTB095N65S3HF | onsemi |
Description: MOSFET N-CH 650V 36A D2PAK-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 5V @ 860µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V |
auf Bestellung 770 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
NTH4LN095N65S3H | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFE Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.8mA Supplier Device Package: TO-247-4 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V |
auf Bestellung 425 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
NTH4LN095N65S3H | onsemi |
MOSFETs SUPERFET3 FAST 95MOHM TO-247-4 |
auf Bestellung 440 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
NTHL065N65S3F | onsemi |
MOSFETs SUPERFET3 650V TO247 |
auf Bestellung 375 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
NTHL065N65S3F | onsemi |
Description: MOSFET N-CH 650V 46A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 10V Power Dissipation (Max): 337W (Tc) Vgs(th) (Max) @ Id: 5V @ 4.6mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 400 V |
auf Bestellung 3150 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
NTHL065N65S3HF | onsemi |
MOSFETs SF3 FRFET HF VERSION 65MOHM TO-247 |
auf Bestellung 446 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
NTHL095N65S3H | onsemi |
MOSFETs SUPERFET3 FAST 95MOHM TO-247-3 |
auf Bestellung 214 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BGH75N65ZF1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 405W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 565ns
Technology: Field Stop; SiC SBD; Trench
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 405W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 565ns
Technology: Field Stop; SiC SBD; Trench
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 17.3 EUR |
| BIDW75N65EH5 |
|
Hersteller: Bourns
IGBTs IGBT Discrete 650V, 75A, High speed switching in TO-247-3L
IGBTs IGBT Discrete 650V, 75A, High speed switching in TO-247-3L
auf Bestellung 5797 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 14.68 EUR |
| 10+ | 8.51 EUR |
| 100+ | 7.14 EUR |
| 600+ | 6.7 EUR |
| CXG75N65HS |
|
Hersteller: Createk Microelectronics
Transistor IGBT ; 650V; 30V; 150A; 300A; 625W; 4,0V~5,5V; 340nC; -55°C~150°C; CXG75N65HS CREATEK TCXG75n65hs
Anzahl je Verpackung: 5 Stücke
Transistor IGBT ; 650V; 30V; 150A; 300A; 625W; 4,0V~5,5V; 340nC; -55°C~150°C; CXG75N65HS CREATEK TCXG75n65hs
Anzahl je Verpackung: 5 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 9.21 EUR |
| DI7A5N65D2K |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 25A; 62.5W; ESD
Type of transistor: N-MOSFET
Power dissipation: 62.5W
Case: D2PAK; TO263AB
Mounting: SMD
Gate charge: 18.4nC
Kind of package: reel; tape
Pulsed drain current: 25A
Polarisation: unipolar
Version: ESD
Drain current: 4.7A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
On-state resistance: 0.43Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 25A; 62.5W; ESD
Type of transistor: N-MOSFET
Power dissipation: 62.5W
Case: D2PAK; TO263AB
Mounting: SMD
Gate charge: 18.4nC
Kind of package: reel; tape
Pulsed drain current: 25A
Polarisation: unipolar
Version: ESD
Drain current: 4.7A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
On-state resistance: 0.43Ω
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 37+ | 2.3 EUR |
| FCH125N65S3R0-F155 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
Description: MOSFET N-CH 650V 24A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 432 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.24 EUR |
| 30+ | 8.23 EUR |
| 60+ | 7.52 EUR |
| 120+ | 6.93 EUR |
| FCH165N65S3R0-F155 |
|
Hersteller: onsemi
MOSFETs SF3 650V 165MOHM 19A
MOSFETs SF3 650V 165MOHM 19A
auf Bestellung 414 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.65 EUR |
| 10+ | 6.81 EUR |
| 120+ | 6.15 EUR |
| FCH165N65S3R0-F155 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 19A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Description: MOSFET N-CH 650V 19A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 304 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.59 EUR |
| 10+ | 8.51 EUR |
| 50+ | 6.76 EUR |
| FCMT125N65S3 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A 4PQFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 590µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 400 V
Description: MOSFET N-CH 650V 24A 4PQFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 590µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 400 V
auf Bestellung 1827 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.43 EUR |
| 10+ | 9.75 EUR |
| 50+ | 7.75 EUR |
| 100+ | 7.09 EUR |
| 500+ | 6.79 EUR |
| FCP125N65S3 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 2265 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.66 EUR |
| 10+ | 7.13 EUR |
| 50+ | 5.6 EUR |
| 100+ | 5.12 EUR |
| 500+ | 4.27 EUR |
| FCP125N65S3 |
|
Hersteller: onsemi
MOSFETs SF3 650V 125MOHM E TO220
MOSFETs SF3 650V 125MOHM E TO220
auf Bestellung 352 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.7 EUR |
| 10+ | 5.63 EUR |
| 100+ | 5.13 EUR |
| 500+ | 4.57 EUR |
| FCP125N65S3R0 |
|
Hersteller: onsemi
MOSFETs SUPERFET3 650V 24A 125 mOhm
MOSFETs SUPERFET3 650V 24A 125 mOhm
auf Bestellung 1584 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.9 EUR |
| 10+ | 5.21 EUR |
| 100+ | 4.74 EUR |
| 500+ | 4.44 EUR |
| FCP125N65S3R0 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 725 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.87 EUR |
| 10+ | 6.59 EUR |
| 50+ | 5.19 EUR |
| 100+ | 4.74 EUR |
| 500+ | 3.94 EUR |
| FCP165N65S3 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 19A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Description: MOSFET N-CH 650V 19A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 767 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.92 EUR |
| 10+ | 5.94 EUR |
| 50+ | 4.65 EUR |
| 100+ | 4.24 EUR |
| 500+ | 3.51 EUR |
| FCP165N65S3 |
|
Hersteller: onsemi
MOSFETs SUPERFET3 650V 19A 165 mOhm
MOSFETs SUPERFET3 650V 19A 165 mOhm
auf Bestellung 801 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.96 EUR |
| 10+ | 4.69 EUR |
| 100+ | 4.25 EUR |
| 500+ | 3.89 EUR |
| FCPF125N65S3 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 400 V
Description: MOSFET N-CH 650V 24A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 400 V
auf Bestellung 399 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.91 EUR |
| 10+ | 7.31 EUR |
| 50+ | 5.78 EUR |
| 100+ | 5.28 EUR |
| FCPF125N65S3 |
|
Hersteller: onsemi
MOSFETs SuperFET3 650V 125 mOhm, TO220F PKG
MOSFETs SuperFET3 650V 125 mOhm, TO220F PKG
auf Bestellung 1372 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.95 EUR |
| 10+ | 5.82 EUR |
| 100+ | 5.3 EUR |
| 500+ | 5.09 EUR |
| FCPF165N65S3L1-F154 |
|
Hersteller: onsemi
MOSFETs SF3 650V 165MOHM E TO220F
MOSFETs SF3 650V 165MOHM E TO220F
auf Bestellung 580 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.92 EUR |
| 10+ | 5.19 EUR |
| 100+ | 4.71 EUR |
| 500+ | 4.21 EUR |
| 1000+ | 3.96 EUR |
| FCPF165N65S3L1-F154 |
|
Hersteller: onsemi
Description: SF3 650V 165MOHM E TO220F
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tj)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 410µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
Description: SF3 650V 165MOHM E TO220F
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tj)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 410µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
auf Bestellung 813 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.89 EUR |
| 10+ | 6.57 EUR |
| 50+ | 5.15 EUR |
| 100+ | 4.69 EUR |
| 500+ | 4.18 EUR |
| FDPF15N65 |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.5A; Idm: 60A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Power dissipation: 38.5W
Case: TO220FP
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Pulsed drain current: 60A
Polarisation: unipolar
Drain current: 9.5A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.5A; Idm: 60A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Power dissipation: 38.5W
Case: TO220FP
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Pulsed drain current: 60A
Polarisation: unipolar
Drain current: 9.5A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
On-state resistance: 440mΩ
auf Bestellung 215 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 4.31 EUR |
| 34+ | 2.55 EUR |
| 35+ | 2.5 EUR |
| FDPF15N65 |
Hersteller: onsemi
MOSFETs 650V 15A 0.44OHMS NCH POWER TRENCH
MOSFETs 650V 15A 0.44OHMS NCH POWER TRENCH
auf Bestellung 3656 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.12 EUR |
| 10+ | 3.64 EUR |
| 100+ | 3.61 EUR |
| 500+ | 2.89 EUR |
| 1000+ | 2.84 EUR |
| GC125N65FF |
|
Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 25A; 42W; TO220F
Type of transistor: N-MOSFET
Power dissipation: 42W
Case: TO220F
Mounting: THT
Gate charge: 52nC
Polarisation: unipolar
Technology: SJ-MOSFET
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 25A; 42W; TO220F
Type of transistor: N-MOSFET
Power dissipation: 42W
Case: TO220F
Mounting: THT
Gate charge: 52nC
Polarisation: unipolar
Technology: SJ-MOSFET
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
auf Bestellung 911 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 2.92 EUR |
| 33+ | 2.62 EUR |
| 50+ | 2.31 EUR |
| 200+ | 2.14 EUR |
| 500+ | 2.01 EUR |
| IGB15N65S5ATMA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 35A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/117ns
Switching Energy: 250µJ (on), 140µJ (off)
Test Condition: 400V, 15A, 25Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 105 W
Description: IGBT TRENCH FS 650V 35A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/117ns
Switching Energy: 250µJ (on), 140µJ (off)
Test Condition: 400V, 15A, 25Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 105 W
auf Bestellung 933 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.32 EUR |
| 10+ | 2.76 EUR |
| 100+ | 1.87 EUR |
| 500+ | 1.49 EUR |
| IGW75N65H5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 198W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 215ns
Technology: TRENCHSTOP™ 5
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 198W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 215ns
Technology: TRENCHSTOP™ 5
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 6.77 EUR |
| 16+ | 5.47 EUR |
| 18+ | 4.86 EUR |
| 30+ | 4.03 EUR |
| 60+ | 3.64 EUR |
| IGW75N65H5XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 120A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 28ns/174ns
Switching Energy: 2.25mJ (on), 950µJ (off)
Test Condition: 400V, 75A, 8Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
Description: IGBT TRENCH 650V 120A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 28ns/174ns
Switching Energy: 2.25mJ (on), 950µJ (off)
Test Condition: 400V, 75A, 8Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 245 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.2 EUR |
| 30+ | 5.74 EUR |
| 120+ | 4.75 EUR |
| IKA15N65F5 |
|
Hersteller: Infineon Technologies
IGBTs ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
IGBTs ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
auf Bestellung 302 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.7 EUR |
| 10+ | 3.67 EUR |
| 100+ | 2.51 EUR |
| 500+ | 2.03 EUR |
| 1000+ | 1.89 EUR |
| 2500+ | 1.82 EUR |
| 5000+ | 1.78 EUR |
| IKA15N65F5XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT 650V 14A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO220-FP
Td (on/off) @ 25°C: 17ns/150ns
Switching Energy: 130µJ (on), 40µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 33.3 W
Description: IGBT 650V 14A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO220-FP
Td (on/off) @ 25°C: 17ns/150ns
Switching Energy: 130µJ (on), 40µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 33.3 W
auf Bestellung 505 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.45 EUR |
| 50+ | 2.7 EUR |
| 100+ | 2.44 EUR |
| 500+ | 1.96 EUR |
| IKB15N65EH5ATMA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 30A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/145ns
Switching Energy: 400µJ (on), 80µJ (off)
Test Condition: 400V, 15A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
Description: IGBT TRENCH FS 650V 30A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/145ns
Switching Energy: 400µJ (on), 80µJ (off)
Test Condition: 400V, 15A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
auf Bestellung 603 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.09 EUR |
| 10+ | 3.96 EUR |
| 100+ | 2.75 EUR |
| 500+ | 2.23 EUR |
| IKW75N65EH5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 198W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 61ns
Turn-off time: 215ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 198W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 61ns
Turn-off time: 215ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 8.79 EUR |
| IKW75N65EL5XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 40ns/275ns
Switching Energy: 1.61mJ (on), 3.2mJ (off)
Test Condition: 400V, 75A, 4Ohm, 15V
Gate Charge: 436 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 536 W
Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 40ns/275ns
Switching Energy: 1.61mJ (on), 3.2mJ (off)
Test Condition: 400V, 75A, 4Ohm, 15V
Gate Charge: 436 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 536 W
auf Bestellung 1470 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.18 EUR |
| 30+ | 8.19 EUR |
| 120+ | 6.88 EUR |
| 510+ | 5.9 EUR |
| 1020+ | 5.6 EUR |
| IKW75N65ES5 |
|
Hersteller: Infineon Technologies
IGBTs Trenchstop 5 IGBT
IGBTs Trenchstop 5 IGBT
auf Bestellung 795 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.26 EUR |
| 10+ | 8.88 EUR |
| 100+ | 7.14 EUR |
| 480+ | 6.33 EUR |
| IKW75N65ES5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Turn-on time: 86ns
Turn-off time: 185ns
Technology: TRENCHSTOP™ 5
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Turn-on time: 86ns
Turn-off time: 185ns
Technology: TRENCHSTOP™ 5
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 85.08 EUR |
| IKW75N65ET7XKSA1 |
|
Hersteller: Infineon Technologies
IGBTs 650 V, 75 A IGBT with anti-parallel diode in TO-247 package
IGBTs 650 V, 75 A IGBT with anti-parallel diode in TO-247 package
auf Bestellung 836 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.57 EUR |
| 10+ | 7.2 EUR |
| 100+ | 6.95 EUR |
| 480+ | 6.14 EUR |
| 1200+ | 5.53 EUR |
| IKW75N65ET7XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/310ns
Switching Energy: 2.17mJ (on), 1.23mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 435 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 333 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/310ns
Switching Energy: 2.17mJ (on), 1.23mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 435 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 333 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 252 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.52 EUR |
| 30+ | 7.15 EUR |
| 120+ | 5.97 EUR |
| IKW75N65RH5XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/180ns
Switching Energy: 360µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/180ns
Switching Energy: 360µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 277 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.18 EUR |
| 30+ | 10.66 EUR |
| 120+ | 9.01 EUR |
| IKZ75N65EH5XKSA1 |
|
Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS
IGBTs IGBT PRODUCTS
auf Bestellung 423 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.53 EUR |
| 10+ | 7.79 EUR |
| 100+ | 6.51 EUR |
| 480+ | 6.09 EUR |
| IKZ75N65EH5XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT 650V 90A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4
Td (on/off) @ 25°C: 26ns/347ns
Switching Energy: 680µJ (on), 430µJ (off)
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 166 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
Description: IGBT 650V 90A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4
Td (on/off) @ 25°C: 26ns/347ns
Switching Energy: 680µJ (on), 430µJ (off)
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 166 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 185 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.47 EUR |
| 30+ | 7.75 EUR |
| 120+ | 6.49 EUR |
| IKZ75N65EL5XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT 650V 100A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
Supplier Device Package: PG-TO247-4
Td (on/off) @ 25°C: 120ns/275ns
Switching Energy: 1.57mJ (on), 3.2mJ (off)
Test Condition: 400V, 75A, 23Ohm, 15V
Gate Charge: 436 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 536 W
Description: IGBT 650V 100A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
Supplier Device Package: PG-TO247-4
Td (on/off) @ 25°C: 120ns/275ns
Switching Energy: 1.57mJ (on), 3.2mJ (off)
Test Condition: 400V, 75A, 23Ohm, 15V
Gate Charge: 436 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 536 W
auf Bestellung 196 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.88 EUR |
| 30+ | 8.62 EUR |
| 120+ | 7.25 EUR |
| IKZ75N65EL5XKSA1 |
|
Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS
IGBTs IGBT PRODUCTS
auf Bestellung 1045 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 14.93 EUR |
| 10+ | 8.68 EUR |
| 100+ | 7.27 EUR |
| 480+ | 7 EUR |
| 1200+ | 6.85 EUR |
| IKZA75N65RH5XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 310µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 310µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 2896 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 52+ | 10.4 EUR |
| IKZA75N65RH5XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 310µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 310µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 19.48 EUR |
| IKZA75N65SS5XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 75A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/145ns
Switching Energy: 240µJ (on), 750µJ (off)
Test Condition: 400V, 75A, 5.6Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 75A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/145ns
Switching Energy: 240µJ (on), 750µJ (off)
Test Condition: 400V, 75A, 5.6Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 101 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.61 EUR |
| 30+ | 14.89 EUR |
| IKZA75N65SS5XKSA1 |
|
Hersteller: Infineon Technologies
IGBTs 650 V, 75 A IGBT Discrete with Silicon Carbide Schottky diode
IGBTs 650 V, 75 A IGBT Discrete with Silicon Carbide Schottky diode
auf Bestellung 376 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.72 EUR |
| 10+ | 14.97 EUR |
| 100+ | 13.28 EUR |
| IXYA15N65C3D1 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 102ns
Technology: GenX3™; Planar; XPT™
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 102ns
Technology: GenX3™; Planar; XPT™
auf Bestellung 149 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 3.8 EUR |
| 25+ | 3.44 EUR |
| 29+ | 3.01 EUR |
| 50+ | 2.73 EUR |
| IXYA55N65B5 |
|
Hersteller: IXYS
IGBTs 650V, 55A, XPT Gen5 B5 IGBT in TO-263
IGBTs 650V, 55A, XPT Gen5 B5 IGBT in TO-263
auf Bestellung 77 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 14.99 EUR |
| 10+ | 9.56 EUR |
| 100+ | 7.27 EUR |
| 500+ | 6.81 EUR |
| IXYH75N65C3H1 |
|
Hersteller: IXYS
IGBTs 650V/170A XPT C3-Class TO-247
IGBTs 650V/170A XPT C3-Class TO-247
auf Bestellung 172 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.35 EUR |
| LGEGB15N65T2 |
|
Hersteller: LUGUANG ELECTRONIC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 125W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Turn-on time: 40ns
Turn-off time: 150ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 125W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Turn-on time: 40ns
Turn-off time: 150ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 558 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 90+ | 0.95 EUR |
| 100+ | 0.86 EUR |
| 112+ | 0.76 EUR |
| 121+ | 0.7 EUR |
| 400+ | 0.67 EUR |
| LGEGP15N65T2 |
|
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 125W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Turn-on time: 40ns
Turn-off time: 150ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 125W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Turn-on time: 40ns
Turn-off time: 150ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 90+ | 0.95 EUR |
| 100+ | 0.86 EUR |
| 112+ | 0.76 EUR |
| 121+ | 0.7 EUR |
| LGEGW75N65F |
|
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 71W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 71W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Turn-on time: 161ns
Turn-off time: 274ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 71W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 71W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Turn-on time: 161ns
Turn-off time: 274ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 114 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 5.36 EUR |
| 18+ | 4.83 EUR |
| 20+ | 4.27 EUR |
| 30+ | 3.99 EUR |
| LGEGW75N65FP |
|
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 500W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 500W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Turn-on time: 215ns
Turn-off time: 225ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 500W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 500W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Turn-on time: 215ns
Turn-off time: 225ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 139 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 5.5 EUR |
| 18+ | 4.97 EUR |
| 20+ | 4.38 EUR |
| 30+ | 4.08 EUR |
| 120+ | 3.81 EUR |
| LGEGW75N65S |
|
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 250W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 250W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 156ns
Turn-off time: 348ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 250W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 250W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 156ns
Turn-off time: 348ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 5.36 EUR |
| 18+ | 4.83 EUR |
| 20+ | 4.27 EUR |
| 30+ | 3.99 EUR |
| NGTB35N65FL2WG |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 150W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 35A
Power dissipation: 150W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 150W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 35A
Power dissipation: 150W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 125nC
Kind of package: tube
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 8.28 EUR |
| 13+ | 6.56 EUR |
| NGTB75N65FL2WG |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 110ns/270ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 595 W
Description: IGBT TRENCH FS 650V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 110ns/270ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 595 W
auf Bestellung 198 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.75 EUR |
| 30+ | 10.48 EUR |
| 120+ | 8.9 EUR |
| NTB095N65S3HF |
|
Hersteller: onsemi
MOSFETs SUPERFET3 650V FRFET 95MO
MOSFETs SUPERFET3 650V FRFET 95MO
auf Bestellung 773 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 16.09 EUR |
| 10+ | 8.77 EUR |
| 100+ | 8.07 EUR |
| 500+ | 7.46 EUR |
| NTB095N65S3HF |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 36A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V
Description: MOSFET N-CH 650V 36A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V
auf Bestellung 770 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.01 EUR |
| 10+ | 10.91 EUR |
| 50+ | 8.72 EUR |
| 100+ | 8.02 EUR |
| NTH4LN095N65S3H |
|
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.8mA
Supplier Device Package: TO-247-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.8mA
Supplier Device Package: TO-247-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V
auf Bestellung 425 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.39 EUR |
| 30+ | 10.27 EUR |
| 60+ | 9.42 EUR |
| 120+ | 8.71 EUR |
| NTH4LN095N65S3H |
|
Hersteller: onsemi
MOSFETs SUPERFET3 FAST 95MOHM TO-247-4
MOSFETs SUPERFET3 FAST 95MOHM TO-247-4
auf Bestellung 440 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 17.45 EUR |
| 10+ | 9.45 EUR |
| NTHL065N65S3F |
|
Hersteller: onsemi
MOSFETs SUPERFET3 650V TO247
MOSFETs SUPERFET3 650V TO247
auf Bestellung 375 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.17 EUR |
| 10+ | 13.51 EUR |
| 120+ | 13.42 EUR |
| NTHL065N65S3F |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 10V
Power Dissipation (Max): 337W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4.6mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 400 V
Description: MOSFET N-CH 650V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 10V
Power Dissipation (Max): 337W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4.6mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 400 V
auf Bestellung 3150 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.06 EUR |
| 30+ | 14.57 EUR |
| 60+ | 13.44 EUR |
| 120+ | 12.48 EUR |
| 510+ | 12.39 EUR |
| NTHL065N65S3HF |
|
Hersteller: onsemi
MOSFETs SF3 FRFET HF VERSION 65MOHM TO-247
MOSFETs SF3 FRFET HF VERSION 65MOHM TO-247
auf Bestellung 446 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.98 EUR |
| 10+ | 14.33 EUR |
| NTHL095N65S3H |
|
Hersteller: onsemi
MOSFETs SUPERFET3 FAST 95MOHM TO-247-3
MOSFETs SUPERFET3 FAST 95MOHM TO-247-3
auf Bestellung 214 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 16.46 EUR |
| 10+ | 8.76 EUR |
Wählen Sie Seite:
1
2
[ Nächste Seite >> ]