Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (124697) > Seite 227 nach 2079

Wählen Sie Seite:   [  << Vorherige Seite ]  1 207 222 223 224 225 226 227 228 229 230 231 232 414 621 828 1035 1242 1449 1656 1863 2070 2079  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
XE164FM72F80LRABKXUMA1 XE164FM72F80LRABKXUMA1 Infineon Technologies Infineon-XE164xM-DS-v02_01-EN.pdf?fileId=db3a304334c41e910134eb1d288804ef&ack=t Description: IC MCU 16BIT 576KB FLASH 100LQFP
DigiKey Programmable: Not Verified
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 50K x 8
Program Memory Size: 576KB (576K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
Number of I/O: 76
Part Status: Not For New Designs
Supplier Device Package: PG-LQFP-100-8
Peripherals: I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 16x10b
Core Processor: C166SV2
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XE167FM72F80LRABKXUMA1 XE167FM72F80LRABKXUMA1 Infineon Technologies Infineon-XE167xM-DS-v02_01-EN.pdf?fileId=db3a304334c41e910134eb1468cf04e3&ack=t Description: IC MCU 16BIT 576KB FLASH 144LQFP
DigiKey Programmable: Not Verified
Number of I/O: 119
Part Status: Not For New Designs
Supplier Device Package: PG-LQFP-144-13
Peripherals: I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 24x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 50K x 8
Program Memory Size: 576KB (576K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XMC1302T038X0064AAXUMA1 XMC1302T038X0064AAXUMA1 Infineon Technologies XMC1300.pdf Description: IC MCU 32BIT 64KB FLASH 38TSSOP
DigiKey Programmable: Not Verified
Number of I/O: 26
Part Status: Obsolete
Supplier Device Package: PG-TSSOP-38-9
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C167CRLMHAFXQLA1 C167CRLMHAFXQLA1 Infineon Technologies Infineon-C167CR-DS-v03_03-en%5B1%5D.pdf?fileId=db3a304412b407950112b41daf9f30b4&ack=t Description: IC MCU 16BIT ROMLESS 144MQFP
DigiKey Programmable: Not Verified
Number of I/O: 111
Supplier Device Package: P-MQFP-144-8
Peripherals: POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 16x10b
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 144-BQFP
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XC161CJ16F40FBBFXQMA1 XC161CJ16F40FBBFXQMA1 Infineon Technologies Infineon-XC161_16-DS-v02_04-en.pdf?fileId=db3a304412b407950112b41cd87f2ef8&ack=t Description: IC MCU 16BIT 128KB FLASH 144TQFP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 360 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IDW10G120C5BFKSA1 IDW10G120C5BFKSA1 Infineon Technologies Infineon-20140610_IDW10G120C5-DS-v02_00-en.pdf?fileId=5546d461464245d30146952e63f869aa Description: DIODE ARRAY SIC 1200V TO247-3-41
Supplier Device Package: PG-TO247-3-41
Current - Average Rectified (Io) (per Diode): 17A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
auf Bestellung 201 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.58 EUR
30+6.56 EUR
120+5.45 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPA65R190C7XKSA1 IPA65R190C7XKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 650V 8A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.35 EUR
50+3.74 EUR
100+3.38 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPP200N15N3GHKSA1 IPP200N15N3GHKSA1 Infineon Technologies Infineon-IPD_BIP_200N15N3-DS-v02_07-en.pdf?fileId=db3a304319c6f18c0119cd1cc23279be Description: MOSFET N-CH 150V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R125C7XKSA1 IPP65R125C7XKSA1 Infineon Technologies Infineon-IPP65R125C7-DS-v02_00-en.pdf?fileId=db3a30434208e5fd014209f7e8700375 Description: MOSFET N-CH 650V 18A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 440µA
Power Dissipation (Max): 101W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 888 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.54 EUR
50+4.31 EUR
100+4.08 EUR
500+3.26 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SPA11N60C3XKSA1 SPA11N60C3XKSA1 Infineon Technologies SPx11N60C3%20%28E8185%29.pdf Description: MOSFET N-CH 600V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 1742 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.85 EUR
50+3.46 EUR
100+3.14 EUR
500+2.78 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SPA20N60C3XKSA1 SPA20N60C3XKSA1 Infineon Technologies Infineon-SPP_I_A20N60C3-DS-v03_01-en.pdf?fileId=db3a304318f3fe290119090054e32a20 Description: MOSFET N-CH 600V 20.7A TO220-31
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 267 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.78 EUR
10+6.5 EUR
100+4.63 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BBY5102VH6327XTSA1 BBY5102VH6327XTSA1 Infineon Technologies bby51series.pdf Description: DIODE TUNING 2SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 3.7pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2-1
Part Status: Obsolete
Voltage - Peak Reverse (Max): 7 V
Capacitance Ratio: 2.2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFQ19SH6327XTSA1 BFQ19SH6327XTSA1 Infineon Technologies Infineon-BFQ19S-DS-v01_01-en.pdf?fileId=db3a30431400ef6801142683f6870630 Description: RF TRANS NPN 15V 5.5GHZ PG-SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 7dB
Power - Max: 1W
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 3dB @ 1.8GHz
Supplier Device Package: PG-SOT89
auf Bestellung 6485 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.92 EUR
33+0.65 EUR
36+0.58 EUR
100+0.51 EUR
250+0.48 EUR
500+0.45 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC035N10NS5ATMA1 BSC035N10NS5ATMA1 Infineon Technologies Infineon-BSC035N10NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae8b5f3bc1b6f Description: MOSFET N-CH 100V 100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 115µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC070N10NS5ATMA1 BSC070N10NS5ATMA1 Infineon Technologies Infineon-BSC070N10NS5-DS-v02_01-EN.pdf?fileId=5546d4624a0bf290014a0fc62d9d6b3c Description: MOSFET N-CH 100V 80A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 50µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
auf Bestellung 10148 Stücke:
Lieferzeit 10-14 Tag (e)
6+4 EUR
10+2.56 EUR
100+1.73 EUR
500+1.38 EUR
1000+1.26 EUR
2000+1.21 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC097N06NSATMA1 BSC097N06NSATMA1 Infineon Technologies Infineon-BSC097N06NS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424cdd69b87155 Description: MOSFET N-CH 60V 46A TDSON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
auf Bestellung 152 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.95 EUR
18+1.21 EUR
100+0.8 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS126H6327XTSA2 BSS126H6327XTSA2 Infineon Technologies Infineon-BSS126-DS-v02_01-en.pdf?fileId=db3a304330f6860601310483af163eba Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 42172 Stücke:
Lieferzeit 10-14 Tag (e)
21+1.02 EUR
34+0.63 EUR
100+0.4 EUR
500+0.3 EUR
1000+0.27 EUR
Mindestbestellmenge: 21 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS127H6327XTSA2 BSS127H6327XTSA2 Infineon Technologies Infineon-BSS127-DS-v02_01-en.pdf?fileId=db3a304330f686060131049ef4883edb Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 8µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS138NH6327XTSA2 BSS138NH6327XTSA2 Infineon Technologies Infineon-BSS138N-DS-v02_86-en.pdf?fileId=db3a304330f68606013104d944d53efb Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 230mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS159NH6327XTSA2 BSS159NH6327XTSA2 Infineon Technologies Infineon-BSS159N-DS-v02_02-en.pdf?fileId=db3a304330f68606013108d8b2230036 Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 160mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 26µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 158011 Stücke:
Lieferzeit 10-14 Tag (e)
19+1.11 EUR
31+0.69 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.3 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS84PH6327XTSA2 BSS84PH6327XTSA2 Infineon Technologies BSS84PH6327XTSA2.pdf Description: MOSFET P-CH 60V 170MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 780 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.52 EUR
64+0.33 EUR
103+0.2 EUR
500+0.15 EUR
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ097N10NS5ATMA1 BSZ097N10NS5ATMA1 Infineon Technologies Infineon-BSZ097N10NS5-DS-v02_01-en.pdf?fileId=5546d461454603990145d5a1b051648d Description: MOSFET N-CH 100V 8A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 50 V
auf Bestellung 8718 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.82 EUR
10+3.09 EUR
100+2.09 EUR
500+1.68 EUR
1000+1.54 EUR
2000+1.42 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTS50301EJAXUMA1 BTS50301EJAXUMA1 Infineon Technologies Infineon-BTS5030-1EJA-DS-v02_20-EN.pdf?fileId=5546d46259d9a4bf015a84f3e686758a Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 30mOhm
Voltage - Load: 8V ~ 18V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-43-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
auf Bestellung 8878 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.28 EUR
10+2.42 EUR
25+2.2 EUR
100+1.95 EUR
250+1.84 EUR
500+1.77 EUR
1000+1.76 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTS50451EJAXUMA1 BTS50451EJAXUMA1 Infineon Technologies Infineon-BTS5045-1EJA-DS-v02_02-EN.pdf?fileId=5546d4625a888733015aa411125b1069 Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Part Status: Active
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Supplier Device Package: PG-DSO-8-43-EP
Ratio - Input:Output: 1:1
Current - Output (Max): 4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 8V ~ 18V
Rds On (Typ): 45mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 13242 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.7 EUR
11+1.98 EUR
25+1.78 EUR
100+1.59 EUR
250+1.5 EUR
500+1.44 EUR
1000+1.39 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ESD108B1CSP0201XTSA1 ESD108B1CSP0201XTSA1 Infineon Technologies Infineon-ESD108-B1-CSP0201-DS-v01_00-EN.pdf?fileId=5546d4624b0b249c014b1746e4d05aa8 Description: TVS DIODE 5.5VWM 41VC WLL-2-1
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI
Capacitance @ Frequency: 0.28pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 41V
Power - Peak Pulse: 27.5W
Power Line Protection: No
Part Status: Active
auf Bestellung 337749 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.39 EUR
86+0.25 EUR
138+0.15 EUR
500+0.11 EUR
1000+0.098 EUR
2000+0.087 EUR
5000+0.075 EUR
Mindestbestellmenge: 53 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ICE3PCS01GXUMA1 ICE3PCS01GXUMA1 Infineon Technologies Infineon-ICE3PCS01-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129a67ae8c02b46 Description: IC PFC CTRLR CCM 100KHZ 14DSO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 21kHz ~ 100kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-14
Part Status: Active
Current - Startup: 380 µA
auf Bestellung 97683 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.01 EUR
10+2.2 EUR
25+2 EUR
100+1.77 EUR
250+1.67 EUR
500+1.61 EUR
1000+1.59 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB020N10N5ATMA1 IPB020N10N5ATMA1 Infineon Technologies Infineon-IPB020N10N5-DS-v02_01-en.pdf?fileId=5546d461454603990145d1e190ea6423 Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 50 V
auf Bestellung 20895 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.52 EUR
10+10.47 EUR
100+7.6 EUR
500+6.39 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB180P04P4L02ATMA1 IPB180P04P4L02ATMA1 Infineon Technologies IPB180P04P4L-02_Rev1.4_7-4-19.pdf Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 410µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 286 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18700 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD50P04P413ATMA1 IPD50P04P413ATMA1 Infineon Technologies Infineon-IPD50P04P4_13-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f781f908b2da3&ack=t Description: MOSFET P-CH 40V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-313
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R385CPATMA1 IPD60R385CPATMA1 Infineon Technologies Infineon-IPD60R385CP-DS-v02_04-EN.pdf?fileId=db3a30432313ff5e012385595fd16763 Description: MOSFET N-CH 600V 9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
auf Bestellung 46446 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.62 EUR
10+3.63 EUR
100+2.5 EUR
500+2.02 EUR
1000+1.93 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R3K3C6ATMA1 IPD60R3K3C6ATMA1 Infineon Technologies Infineon-IPD60R3K3C6-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129f96874465b3a Description: MOSFET N-CH 600V 1.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 500mA, 10V
Power Dissipation (Max): 18.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD65R190C7ATMA1 IPD65R190C7ATMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 650V 13A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
auf Bestellung 4208 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.89 EUR
10+4.49 EUR
100+3.13 EUR
500+2.55 EUR
1000+2.53 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPG20N10S4L22AATMA1 IPG20N10S4L22AATMA1 Infineon Technologies IPG20N10S4L-22A_DS_1_0.pdf?fileId=5546d46147a9c2e40147f76fc25c0a21&ack=t Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 60W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1755pF @ 25V
Rds On (Max) @ Id, Vgs: 22mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.63 EUR
10+2.98 EUR
100+2.02 EUR
500+1.62 EUR
1000+1.49 EUR
2000+1.48 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPL65R130C7AUMA1 IPL65R130C7AUMA1 Infineon Technologies Infineon-IPL65R130C7-DS-v02_00-en.pdf?fileId=db3a30433e78ea82013e7977eef9029b Description: MOSFET N-CH 650V 15A 4VSON
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4V @ 440µA
Power Dissipation (Max): 102W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
auf Bestellung 2514 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.64 EUR
10+7.09 EUR
100+5.08 EUR
500+4.58 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPLU300N04S4R8XTMA1 IPLU300N04S4R8XTMA1 Infineon Technologies IPLU300N04S4-R8-Data-Sheet-10-Infineon.pdf?fileId=5546d4614755559a01476cd7a7417b72&ack=t Description: MOSFET N-CH 40V 300A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.77mOhm @ 100A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22945 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7666 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.7 EUR
10+8.53 EUR
100+6.18 EUR
500+5.8 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPT012N08N5ATMA1 IPT012N08N5ATMA1 Infineon Technologies Infineon-IPT012N08N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014aca59127a1eb9 Description: MOSFET N-CH 80V 300A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 150A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V
auf Bestellung 17322 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.23 EUR
10+8.91 EUR
100+6.47 EUR
500+6.13 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
KP236N6165XTMA1 KP236N6165XTMA1 Infineon Technologies Infineon-KP236_N6165-DS-v01_00-en.pdf?fileId=db3a30432ad629a6012af68133600b1a Description: SENSOR 23.93PSIA 4.85V DSOF8
Output: 0.1 V ~ 4.85 V
Mounting Type: Surface Mount
Output Type: Analog Voltage
Package / Case: 8-SMD Module
Features: Amplified Output, Temperature Compensated
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Port Style: No Port
Supplier Device Package: PG-DSOF-8-16
Applications: Board Mount
Voltage - Supply: 4.5V ~ 5.5V
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 125°C
Accuracy: ±0.29PSI (±2kPa)
Pressure Type: Absolute
Operating Pressure: 8.7PSI ~ 23.93PSI (60kPa ~ 165kPa)
auf Bestellung 10084 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.07 EUR
5+8.14 EUR
10+7.79 EUR
25+7.38 EUR
50+7.1 EUR
100+6.84 EUR
500+6.39 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SPD02N80C3ATMA1 SPD02N80C3ATMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 800V 2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.2A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
auf Bestellung 11925 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.31 EUR
10+2.09 EUR
100+1.4 EUR
500+1.11 EUR
1000+1.01 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SPD04N80C3ATMA1 SPD04N80C3ATMA1 Infineon Technologies Infineon-SPD04N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1a316bac1952 Description: MOSFET N-CH 800V 4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
auf Bestellung 6569 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.32 EUR
10+2.76 EUR
100+1.88 EUR
500+1.5 EUR
1000+1.37 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SPD06N80C3ATMA1 SPD06N80C3ATMA1 Infineon Technologies Infineon-SPD06N80C3-DS-v02_92-en.pdf?fileId=db3a30433f1b26e8013f1dffc5130173 Description: MOSFET N-CH 800V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
auf Bestellung 5766 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.69 EUR
10+3.01 EUR
100+2.05 EUR
500+1.64 EUR
1000+1.51 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SPD08P06PGBTMA1 SPD08P06PGBTMA1 Infineon Technologies Infineon-SPD08P06PG-DS-v01_92-en.pdf?fileId=db3a30431ed1d7b2011f40433a224ec6 Description: MOSFET P-CH 60V 8.83A TO252-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6.2V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 6.2V
Current - Continuous Drain (Id) @ 25°C: 8.83A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 7478 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.68 EUR
16+1.36 EUR
100+0.94 EUR
500+0.75 EUR
1000+0.67 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC275TP64F200WCAKXUMA1 TC275TP64F200WCAKXUMA1 Infineon Technologies TC270_TC275_TC277_v1.2_4-4-19.pdf Description: IC MCU 32BIT 4MB FLASH 176LQFP
DigiKey Programmable: Not Verified
Number of I/O: 112
Part Status: Active
Supplier Device Package: PG-LQFP-176-2
Peripherals: DMA, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 40x12b, 6 x Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 472K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: 176-LQFP
auf Bestellung 653 Stücke:
Lieferzeit 10-14 Tag (e)
1+65.76 EUR
10+53.37 EUR
25+50.28 EUR
100+46.87 EUR
250+45.24 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TC277TP64F200SCAKXUMA1 TC277TP64F200SCAKXUMA1 Infineon Technologies TC270_TC275_TC277_v1.2_4-4-19.pdf Description: IC MCU 32BIT 4MB FLASH 292LFBGA
auf Bestellung 930 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TLD1120ELXUMA1 TLD1120ELXUMA1 Infineon Technologies Infineon-TLD1120EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e0a8c163245 Description: IC LED DRVR LINEAR 360MA 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 360mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-EP
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
auf Bestellung 2619 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.63 EUR
18+1.18 EUR
25+1.06 EUR
100+0.93 EUR
250+0.87 EUR
500+0.83 EUR
1000+0.81 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE42642GHTSA2 TLE42642GHTSA2 Infineon Technologies Infineon-TLE4264-2G-DS-v02_60-EN.pdf?fileId=5546d46258fc0bc101595f6960991f2d Description: IC REG LIN 5V 150MA PG-SOT223-4
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 4 mA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA
PSRR: 68dB (100Hz)
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-SOT223-4
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE42662GSV33HTMA2 TLE42662GSV33HTMA2 Infineon Technologies Infineon-TLE4266-2-DS-v01_40-EN.pdf?fileId=5546d46259d9a4bf0159f94369cf3e1b Description: IC REG LINEAR 3.3V PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 3.3V
Control Features: Inhibit
PSRR: 68dB (100Hz)
Voltage Dropout (Max): 1.1V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 19024 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.24 EUR
13+1.62 EUR
25+1.46 EUR
100+1.3 EUR
250+1.21 EUR
500+1.17 EUR
1000+1.14 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD50R650CEATMA1 IPD50R650CEATMA1 Infineon Technologies Infineon-IPD50R650CE-DS-v02_00-en.pdf?fileId=db3a304339d29c450139d41341a202a1 Description: MOSFET N CH 500V 6.1A PG-TO252
auf Bestellung 2406 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPD50R500CEATMA1 IPD50R500CEATMA1 Infineon Technologies dgdl?fileId=db3a3043382e83730138514ff7881004 Description: MOSFET N-CH 500V 7.6A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPD03N50C3ATMA1 SPD03N50C3ATMA1 Infineon Technologies Infineon-SPD03N50C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f144a43c7038b Description: MOSFET N-CH 500V 3.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPD04N50C3ATMA1 SPD04N50C3ATMA1 Infineon Technologies Infineon-SPD04N50C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f19f2e04218fd Description: MOSFET N-CH 500V 4.5A TO252-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.11 EUR
10+2.63 EUR
100+1.77 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R600P6ATMA1 IPD60R600P6ATMA1 Infineon Technologies DS_IPx60R600P6_2_1.pdf?fileId=db3a30433f2e70c5013f3862b5622681 Description: MOSFET N-CH 600V 7.3A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 4482 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.27 EUR
11+2.07 EUR
100+1.38 EUR
500+1.08 EUR
1000+1 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD50R650CEATMA1 IPD50R650CEATMA1 Infineon Technologies Infineon-IPD50R650CE-DS-v02_00-en.pdf?fileId=db3a304339d29c450139d41341a202a1 Description: MOSFET N CH 500V 6.1A PG-TO252
auf Bestellung 2406 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BTS3018TCATMA1 BTS3018TCATMA1 Infineon Technologies Infineon-BTS3018TC-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aadcb19894c31 Description: IC PWR SWITCH N-CHAN 1:1 TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 18mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-3-2
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
1000+8.1 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTS3060TFATMA1 BTS3060TFATMA1 Infineon Technologies Infineon-BTS3060TF-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad82020e4c19 Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.04 EUR
5000+1.01 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IFX30081SJVXUMA1 IFX30081SJVXUMA1 Infineon Technologies Infineon-IFX30081SJV-DS-v01_00-EN.pdf?fileId=5546d4624b0b249c014b7e0e8ba050db&ack=t Description: IC REG LINEAR POS ADJ 50MA 8DSO
Current - Supply (Max): 11 µA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.3V @ 50mA
PSRR: 60dB (100Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.2V
Voltage - Output (Max): 41.7V
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 1 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 50mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IFX9201SGAUMA1 IFX9201SGAUMA1 Infineon Technologies Infineon-IFX9201SG-DS-v01_01-EN.pdf?fileId=5546d4624cb7f111014d2e8916795dea&ack=t Description: IC HALF BRIDGE DRIVER 6A 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: PWM, SPI
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 5V ~ 36V
Rds On (Typ): 100mOhm LS, 100mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 6A
Technology: Power MOSFET
Voltage - Load: 5V ~ 36V
Supplier Device Package: PG-DSO-12-17
Fault Protection: Current Limiting, Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+3.8 EUR
2000+3.71 EUR
3000+3.67 EUR
5000+3.62 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE4254EJAXUMA1 TLE4254EJAXUMA1 Infineon Technologies Infineon-TLE4254-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf0159f928c6663dc6 Description: IC REG LINEAR POS ADJ 70MA 8DSO
Qualification: AEC-Q100
Current - Supply (Max): 15 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.4V @ 70mA
PSRR: 60dB (100Hz)
Grade: Automotive
Control Features: Enable
Voltage - Output (Min/Fixed): Tracking
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 70mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE42764EV50XUMA1 TLE42764EV50XUMA1 Infineon Technologies Infineon-TLE42764-DS-v01_30-EN.pdf?fileId=5546d46258fc0bc101595f8e8c751fa3 Description: IC REG LIN 5V 400MA PG-SSOP-14-2
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-2
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLF4949EJXUMA1 TLF4949EJXUMA1 Infineon Technologies Infineon-TLF4949-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159fa03ca8d3f29 Description: IC REG LINEAR 5V 100MA 8DSO
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 28V
Current - Quiescent (Iq): 300 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 3.6 mA
Protection Features: Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA
Part Status: Active
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLF4949SJXUMA1 TLF4949SJXUMA1 Infineon Technologies Infineon-TLF4949-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159fa03ca8d3f29 Description: IC REG LINEAR 5V 100MA 8DSO
Qualification: AEC-Q100
Grade: Automotive
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Current - Supply (Max): 3.6 mA
Protection Features: Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 28V
Current - Quiescent (Iq): 300 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XE164FM72F80LRABKXUMA1 Infineon-XE164xM-DS-v02_01-EN.pdf?fileId=db3a304334c41e910134eb1d288804ef&ack=t
XE164FM72F80LRABKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 576KB FLASH 100LQFP
DigiKey Programmable: Not Verified
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 50K x 8
Program Memory Size: 576KB (576K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
Number of I/O: 76
Part Status: Not For New Designs
Supplier Device Package: PG-LQFP-100-8
Peripherals: I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 16x10b
Core Processor: C166SV2
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XE167FM72F80LRABKXUMA1 Infineon-XE167xM-DS-v02_01-EN.pdf?fileId=db3a304334c41e910134eb1468cf04e3&ack=t
XE167FM72F80LRABKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 576KB FLASH 144LQFP
DigiKey Programmable: Not Verified
Number of I/O: 119
Part Status: Not For New Designs
Supplier Device Package: PG-LQFP-144-13
Peripherals: I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 24x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 50K x 8
Program Memory Size: 576KB (576K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XMC1302T038X0064AAXUMA1 XMC1300.pdf
XMC1302T038X0064AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 38TSSOP
DigiKey Programmable: Not Verified
Number of I/O: 26
Part Status: Obsolete
Supplier Device Package: PG-TSSOP-38-9
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C167CRLMHAFXQLA1 Infineon-C167CR-DS-v03_03-en%5B1%5D.pdf?fileId=db3a304412b407950112b41daf9f30b4&ack=t
C167CRLMHAFXQLA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 144MQFP
DigiKey Programmable: Not Verified
Number of I/O: 111
Supplier Device Package: P-MQFP-144-8
Peripherals: POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 16x10b
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 144-BQFP
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XC161CJ16F40FBBFXQMA1 Infineon-XC161_16-DS-v02_04-en.pdf?fileId=db3a304412b407950112b41cd87f2ef8&ack=t
XC161CJ16F40FBBFXQMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 144TQFP
Produkt ist nicht verfügbar
Mindestbestellmenge: 360 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IDW10G120C5BFKSA1 Infineon-20140610_IDW10G120C5-DS-v02_00-en.pdf?fileId=5546d461464245d30146952e63f869aa
IDW10G120C5BFKSA1
Hersteller: Infineon Technologies
Description: DIODE ARRAY SIC 1200V TO247-3-41
Supplier Device Package: PG-TO247-3-41
Current - Average Rectified (Io) (per Diode): 17A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
auf Bestellung 201 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.58 EUR
30+6.56 EUR
120+5.45 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPA65R190C7XKSA1 fundamentals-of-power-semiconductors
IPA65R190C7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 8A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.35 EUR
50+3.74 EUR
100+3.38 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPP200N15N3GHKSA1 Infineon-IPD_BIP_200N15N3-DS-v02_07-en.pdf?fileId=db3a304319c6f18c0119cd1cc23279be
IPP200N15N3GHKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R125C7XKSA1 Infineon-IPP65R125C7-DS-v02_00-en.pdf?fileId=db3a30434208e5fd014209f7e8700375
IPP65R125C7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 18A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 440µA
Power Dissipation (Max): 101W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 888 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.54 EUR
50+4.31 EUR
100+4.08 EUR
500+3.26 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SPA11N60C3XKSA1 SPx11N60C3%20%28E8185%29.pdf
SPA11N60C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 1742 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.85 EUR
50+3.46 EUR
100+3.14 EUR
500+2.78 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SPA20N60C3XKSA1 Infineon-SPP_I_A20N60C3-DS-v03_01-en.pdf?fileId=db3a304318f3fe290119090054e32a20
SPA20N60C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 20.7A TO220-31
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 267 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.78 EUR
10+6.5 EUR
100+4.63 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BBY5102VH6327XTSA1 bby51series.pdf
BBY5102VH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE TUNING 2SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 3.7pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2-1
Part Status: Obsolete
Voltage - Peak Reverse (Max): 7 V
Capacitance Ratio: 2.2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFQ19SH6327XTSA1 Infineon-BFQ19S-DS-v01_01-en.pdf?fileId=db3a30431400ef6801142683f6870630
BFQ19SH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 15V 5.5GHZ PG-SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 7dB
Power - Max: 1W
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 3dB @ 1.8GHz
Supplier Device Package: PG-SOT89
auf Bestellung 6485 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.92 EUR
33+0.65 EUR
36+0.58 EUR
100+0.51 EUR
250+0.48 EUR
500+0.45 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC035N10NS5ATMA1 Infineon-BSC035N10NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae8b5f3bc1b6f
BSC035N10NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 115µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC070N10NS5ATMA1 Infineon-BSC070N10NS5-DS-v02_01-EN.pdf?fileId=5546d4624a0bf290014a0fc62d9d6b3c
BSC070N10NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 80A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 50µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
auf Bestellung 10148 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4 EUR
10+2.56 EUR
100+1.73 EUR
500+1.38 EUR
1000+1.26 EUR
2000+1.21 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC097N06NSATMA1 Infineon-BSC097N06NS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424cdd69b87155
BSC097N06NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 46A TDSON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
auf Bestellung 152 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.95 EUR
18+1.21 EUR
100+0.8 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS126H6327XTSA2 Infineon-BSS126-DS-v02_01-en.pdf?fileId=db3a304330f6860601310483af163eba
BSS126H6327XTSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 42172 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1.02 EUR
34+0.63 EUR
100+0.4 EUR
500+0.3 EUR
1000+0.27 EUR
Mindestbestellmenge: 21 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS127H6327XTSA2 Infineon-BSS127-DS-v02_01-en.pdf?fileId=db3a304330f686060131049ef4883edb
BSS127H6327XTSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 8µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS138NH6327XTSA2 Infineon-BSS138N-DS-v02_86-en.pdf?fileId=db3a304330f68606013104d944d53efb
BSS138NH6327XTSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 230mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS159NH6327XTSA2 Infineon-BSS159N-DS-v02_02-en.pdf?fileId=db3a304330f68606013108d8b2230036
BSS159NH6327XTSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 160mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 26µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 158011 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.11 EUR
31+0.69 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.3 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS84PH6327XTSA2 BSS84PH6327XTSA2.pdf
BSS84PH6327XTSA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 170MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 780 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
40+0.52 EUR
64+0.33 EUR
103+0.2 EUR
500+0.15 EUR
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ097N10NS5ATMA1 Infineon-BSZ097N10NS5-DS-v02_01-en.pdf?fileId=5546d461454603990145d5a1b051648d
BSZ097N10NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 8A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 50 V
auf Bestellung 8718 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.82 EUR
10+3.09 EUR
100+2.09 EUR
500+1.68 EUR
1000+1.54 EUR
2000+1.42 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTS50301EJAXUMA1 Infineon-BTS5030-1EJA-DS-v02_20-EN.pdf?fileId=5546d46259d9a4bf015a84f3e686758a
BTS50301EJAXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 30mOhm
Voltage - Load: 8V ~ 18V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-43-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
auf Bestellung 8878 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.28 EUR
10+2.42 EUR
25+2.2 EUR
100+1.95 EUR
250+1.84 EUR
500+1.77 EUR
1000+1.76 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTS50451EJAXUMA1 Infineon-BTS5045-1EJA-DS-v02_02-EN.pdf?fileId=5546d4625a888733015aa411125b1069
BTS50451EJAXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Part Status: Active
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Supplier Device Package: PG-DSO-8-43-EP
Ratio - Input:Output: 1:1
Current - Output (Max): 4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 8V ~ 18V
Rds On (Typ): 45mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 13242 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.7 EUR
11+1.98 EUR
25+1.78 EUR
100+1.59 EUR
250+1.5 EUR
500+1.44 EUR
1000+1.39 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ESD108B1CSP0201XTSA1 Infineon-ESD108-B1-CSP0201-DS-v01_00-EN.pdf?fileId=5546d4624b0b249c014b1746e4d05aa8
ESD108B1CSP0201XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 41VC WLL-2-1
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI
Capacitance @ Frequency: 0.28pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 41V
Power - Peak Pulse: 27.5W
Power Line Protection: No
Part Status: Active
auf Bestellung 337749 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
53+0.39 EUR
86+0.25 EUR
138+0.15 EUR
500+0.11 EUR
1000+0.098 EUR
2000+0.087 EUR
5000+0.075 EUR
Mindestbestellmenge: 53 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ICE3PCS01GXUMA1 Infineon-ICE3PCS01-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129a67ae8c02b46
ICE3PCS01GXUMA1
Hersteller: Infineon Technologies
Description: IC PFC CTRLR CCM 100KHZ 14DSO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 21kHz ~ 100kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-14
Part Status: Active
Current - Startup: 380 µA
auf Bestellung 97683 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.01 EUR
10+2.2 EUR
25+2 EUR
100+1.77 EUR
250+1.67 EUR
500+1.61 EUR
1000+1.59 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB020N10N5ATMA1 Infineon-IPB020N10N5-DS-v02_01-en.pdf?fileId=5546d461454603990145d1e190ea6423
IPB020N10N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 50 V
auf Bestellung 20895 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.52 EUR
10+10.47 EUR
100+7.6 EUR
500+6.39 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB180P04P4L02ATMA1 IPB180P04P4L-02_Rev1.4_7-4-19.pdf
IPB180P04P4L02ATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 410µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 286 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18700 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD50P04P413ATMA1 Infineon-IPD50P04P4_13-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f781f908b2da3&ack=t
IPD50P04P413ATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-313
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R385CPATMA1 Infineon-IPD60R385CP-DS-v02_04-EN.pdf?fileId=db3a30432313ff5e012385595fd16763
IPD60R385CPATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
auf Bestellung 46446 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.62 EUR
10+3.63 EUR
100+2.5 EUR
500+2.02 EUR
1000+1.93 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R3K3C6ATMA1 Infineon-IPD60R3K3C6-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129f96874465b3a
IPD60R3K3C6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 1.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 500mA, 10V
Power Dissipation (Max): 18.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD65R190C7ATMA1 fundamentals-of-power-semiconductors
IPD65R190C7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 13A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
auf Bestellung 4208 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.89 EUR
10+4.49 EUR
100+3.13 EUR
500+2.55 EUR
1000+2.53 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPG20N10S4L22AATMA1 IPG20N10S4L-22A_DS_1_0.pdf?fileId=5546d46147a9c2e40147f76fc25c0a21&ack=t
IPG20N10S4L22AATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 60W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1755pF @ 25V
Rds On (Max) @ Id, Vgs: 22mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.63 EUR
10+2.98 EUR
100+2.02 EUR
500+1.62 EUR
1000+1.49 EUR
2000+1.48 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPL65R130C7AUMA1 Infineon-IPL65R130C7-DS-v02_00-en.pdf?fileId=db3a30433e78ea82013e7977eef9029b
IPL65R130C7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 15A 4VSON
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4V @ 440µA
Power Dissipation (Max): 102W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
auf Bestellung 2514 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.64 EUR
10+7.09 EUR
100+5.08 EUR
500+4.58 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPLU300N04S4R8XTMA1 IPLU300N04S4-R8-Data-Sheet-10-Infineon.pdf?fileId=5546d4614755559a01476cd7a7417b72&ack=t
IPLU300N04S4R8XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 300A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.77mOhm @ 100A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22945 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7666 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.7 EUR
10+8.53 EUR
100+6.18 EUR
500+5.8 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPT012N08N5ATMA1 Infineon-IPT012N08N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014aca59127a1eb9
IPT012N08N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 300A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 150A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V
auf Bestellung 17322 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.23 EUR
10+8.91 EUR
100+6.47 EUR
500+6.13 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
KP236N6165XTMA1 Infineon-KP236_N6165-DS-v01_00-en.pdf?fileId=db3a30432ad629a6012af68133600b1a
KP236N6165XTMA1
Hersteller: Infineon Technologies
Description: SENSOR 23.93PSIA 4.85V DSOF8
Output: 0.1 V ~ 4.85 V
Mounting Type: Surface Mount
Output Type: Analog Voltage
Package / Case: 8-SMD Module
Features: Amplified Output, Temperature Compensated
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Port Style: No Port
Supplier Device Package: PG-DSOF-8-16
Applications: Board Mount
Voltage - Supply: 4.5V ~ 5.5V
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 125°C
Accuracy: ±0.29PSI (±2kPa)
Pressure Type: Absolute
Operating Pressure: 8.7PSI ~ 23.93PSI (60kPa ~ 165kPa)
auf Bestellung 10084 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.07 EUR
5+8.14 EUR
10+7.79 EUR
25+7.38 EUR
50+7.1 EUR
100+6.84 EUR
500+6.39 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SPD02N80C3ATMA1 fundamentals-of-power-semiconductors
SPD02N80C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.2A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
auf Bestellung 11925 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.31 EUR
10+2.09 EUR
100+1.4 EUR
500+1.11 EUR
1000+1.01 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SPD04N80C3ATMA1 Infineon-SPD04N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1a316bac1952
SPD04N80C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
auf Bestellung 6569 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.32 EUR
10+2.76 EUR
100+1.88 EUR
500+1.5 EUR
1000+1.37 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SPD06N80C3ATMA1 Infineon-SPD06N80C3-DS-v02_92-en.pdf?fileId=db3a30433f1b26e8013f1dffc5130173
SPD06N80C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
auf Bestellung 5766 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.69 EUR
10+3.01 EUR
100+2.05 EUR
500+1.64 EUR
1000+1.51 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SPD08P06PGBTMA1 Infineon-SPD08P06PG-DS-v01_92-en.pdf?fileId=db3a30431ed1d7b2011f40433a224ec6
SPD08P06PGBTMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 8.83A TO252-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6.2V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 6.2V
Current - Continuous Drain (Id) @ 25°C: 8.83A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 7478 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.68 EUR
16+1.36 EUR
100+0.94 EUR
500+0.75 EUR
1000+0.67 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC275TP64F200WCAKXUMA1 TC270_TC275_TC277_v1.2_4-4-19.pdf
TC275TP64F200WCAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 176LQFP
DigiKey Programmable: Not Verified
Number of I/O: 112
Part Status: Active
Supplier Device Package: PG-LQFP-176-2
Peripherals: DMA, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 40x12b, 6 x Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 472K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: 176-LQFP
auf Bestellung 653 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+65.76 EUR
10+53.37 EUR
25+50.28 EUR
100+46.87 EUR
250+45.24 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TC277TP64F200SCAKXUMA1 TC270_TC275_TC277_v1.2_4-4-19.pdf
TC277TP64F200SCAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
auf Bestellung 930 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TLD1120ELXUMA1 Infineon-TLD1120EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e0a8c163245
TLD1120ELXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR LINEAR 360MA 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 360mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-EP
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
auf Bestellung 2619 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.63 EUR
18+1.18 EUR
25+1.06 EUR
100+0.93 EUR
250+0.87 EUR
500+0.83 EUR
1000+0.81 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE42642GHTSA2 Infineon-TLE4264-2G-DS-v02_60-EN.pdf?fileId=5546d46258fc0bc101595f6960991f2d
TLE42642GHTSA2
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 150MA PG-SOT223-4
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 4 mA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA
PSRR: 68dB (100Hz)
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-SOT223-4
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE42662GSV33HTMA2 Infineon-TLE4266-2-DS-v01_40-EN.pdf?fileId=5546d46259d9a4bf0159f94369cf3e1b
TLE42662GSV33HTMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 3.3V
Control Features: Inhibit
PSRR: 68dB (100Hz)
Voltage Dropout (Max): 1.1V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 19024 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.24 EUR
13+1.62 EUR
25+1.46 EUR
100+1.3 EUR
250+1.21 EUR
500+1.17 EUR
1000+1.14 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD50R650CEATMA1 Infineon-IPD50R650CE-DS-v02_00-en.pdf?fileId=db3a304339d29c450139d41341a202a1
IPD50R650CEATMA1
Hersteller: Infineon Technologies
Description: MOSFET N CH 500V 6.1A PG-TO252
auf Bestellung 2406 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPD50R500CEATMA1 dgdl?fileId=db3a3043382e83730138514ff7881004
IPD50R500CEATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 7.6A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPD03N50C3ATMA1 Infineon-SPD03N50C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f144a43c7038b
SPD03N50C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 3.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPD04N50C3ATMA1 Infineon-SPD04N50C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f19f2e04218fd
SPD04N50C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 4.5A TO252-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.11 EUR
10+2.63 EUR
100+1.77 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R600P6ATMA1 DS_IPx60R600P6_2_1.pdf?fileId=db3a30433f2e70c5013f3862b5622681
IPD60R600P6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 4482 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.27 EUR
11+2.07 EUR
100+1.38 EUR
500+1.08 EUR
1000+1 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD50R650CEATMA1 Infineon-IPD50R650CE-DS-v02_00-en.pdf?fileId=db3a304339d29c450139d41341a202a1
IPD50R650CEATMA1
Hersteller: Infineon Technologies
Description: MOSFET N CH 500V 6.1A PG-TO252
auf Bestellung 2406 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BTS3018TCATMA1 Infineon-BTS3018TC-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aadcb19894c31
BTS3018TCATMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 18mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-3-2
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+8.1 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTS3060TFATMA1 Infineon-BTS3060TF-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad82020e4c19
BTS3060TFATMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.04 EUR
5000+1.01 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IFX30081SJVXUMA1 Infineon-IFX30081SJV-DS-v01_00-EN.pdf?fileId=5546d4624b0b249c014b7e0e8ba050db&ack=t
IFX30081SJVXUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 50MA 8DSO
Current - Supply (Max): 11 µA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.3V @ 50mA
PSRR: 60dB (100Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.2V
Voltage - Output (Max): 41.7V
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 1 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 50mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IFX9201SGAUMA1 Infineon-IFX9201SG-DS-v01_01-EN.pdf?fileId=5546d4624cb7f111014d2e8916795dea&ack=t
IFX9201SGAUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 6A 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: PWM, SPI
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 5V ~ 36V
Rds On (Typ): 100mOhm LS, 100mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 6A
Technology: Power MOSFET
Voltage - Load: 5V ~ 36V
Supplier Device Package: PG-DSO-12-17
Fault Protection: Current Limiting, Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+3.8 EUR
2000+3.71 EUR
3000+3.67 EUR
5000+3.62 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE4254EJAXUMA1 Infineon-TLE4254-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf0159f928c6663dc6
TLE4254EJAXUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 70MA 8DSO
Qualification: AEC-Q100
Current - Supply (Max): 15 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.4V @ 70mA
PSRR: 60dB (100Hz)
Grade: Automotive
Control Features: Enable
Voltage - Output (Min/Fixed): Tracking
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 70mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE42764EV50XUMA1 Infineon-TLE42764-DS-v01_30-EN.pdf?fileId=5546d46258fc0bc101595f8e8c751fa3
TLE42764EV50XUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 400MA PG-SSOP-14-2
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-2
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLF4949EJXUMA1 Infineon-TLF4949-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159fa03ca8d3f29
TLF4949EJXUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 100MA 8DSO
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 28V
Current - Quiescent (Iq): 300 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 3.6 mA
Protection Features: Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA
Part Status: Active
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLF4949SJXUMA1 Infineon-TLF4949-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159fa03ca8d3f29
TLF4949SJXUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 100MA 8DSO
Qualification: AEC-Q100
Grade: Automotive
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Current - Supply (Max): 3.6 mA
Protection Features: Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 28V
Current - Quiescent (Iq): 300 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 207 222 223 224 225 226 227 228 229 230 231 232 414 621 828 1035 1242 1449 1656 1863 2070 2079  [ Nächste Seite >> ]