Produkte > 2N7
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||||
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2N700 | MOTOROLA | auf Bestellung 3600 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
2N700/18 | CAN | auf Bestellung 1030 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
2N7000 | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000 | LGE | Tranzystor N-Channel MOSFET; 60V; 6Ohm; 200mA; 350mW; -55°C ~ 150°C; 2N7000-LGE; 2N7000 T2N7000 LGE Anzahl je Verpackung: 100 Stücke | auf Bestellung 400 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7000 | Diotec Semiconductor | MOSFET MOSFET, TO-92, 60V, 0.2A, 150C, N | auf Bestellung 8049 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7000 | STMicroelectronics | Description: MOSFET N-CH 60V 350MA TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000 | ONSEMI | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Technology: DMOS Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000 | ON Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Bag | auf Bestellung 5450 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000 Produktcode: 20638 | NXP | Transistoren > MOSFET N-CH Gehäuse: TO-92 Uds,V: 60 Idd,A: 01.03.2000 Rds(on), Ohm: 5 Ciss, pF/Qg, nC: 60/- JHGF: THT | verfügbar 50 Stück: erwartet 2000 Stück: 2000 Stück - erwartet 01.05.2024 |
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2N7000 | Diotec Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000 | Diotec Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo | auf Bestellung 653 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000 | ONSEMI | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Technology: DMOS Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000 | STMicroelectronics | MOSFET N-Ch 60 Volt 0.35 A | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000 | Fairchild Semiconductor | Транз. Пол. MOSFET N-CH 60V 0.2A TO-92 | auf Bestellung 311 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000 | auf Bestellung 7500 Stücke: Lieferzeit 7-21 Tag (e) | |||||||||||||||||||||
2N7000 Produktcode: 200238 | CJ | Transistoren > MOSFET N-CH Gehäuse: TO-92 Uds,V: 60 V Idd,A: 0,2 A Rds(on), Ohm: 5 Ohm Ciss, pF/Qg, nC: 60/ JHGF: THT | auf Bestellung 1289 Stück: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
2N7000 | Diotec Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo | auf Bestellung 653 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7000 | Diotec Electronics | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo | auf Bestellung 32000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000 | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.35W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Power dissipation: 0.35W Case: TO92 On-state resistance: 7.5Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced | auf Bestellung 5410 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000 | NTE Electronics, Inc. | N-Ch, Enhancement Mode Field Effect Transistor | auf Bestellung 4300 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000 | Microchip Technology | MOSFET 60V 5Ohm | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000 | LGE | Tranzystor N-Channel MOSFET; 60V; 6Ohm; 200mA; 350mW; -55°C ~ 150°C; 2N7000-LGE; 2N7000 T2N7000 LGE | auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) | |||||||||||||||||||
2N7000 | LUGUANG ELECTRONIC | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.35W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Power dissipation: 0.35W Case: TO92 On-state resistance: 7.5Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | auf Bestellung 5410 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7000 | ON Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Bag | auf Bestellung 5450 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000 | Diotec Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000 | Diotec Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000 | LGE | N-MOSFET 190mA 60V 250mW 2N7000 TO92(ammo, formed PIN) LGE T2N7000 f Anzahl je Verpackung: 100 Stücke | auf Bestellung 6870 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7000 | onsemi / Fairchild | MOSFET Small Signal MOSFET 60V 200mA 5 Ohm Single N-Channel TO-92 | auf Bestellung 33935 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7000 | Fairchild/ON Semiconductor | N-канальний ПТ; Udss, В = 60; Id = 200 мА; Ptot, Вт = 0,4; Тип монт. = вивідний; Ciss, пФ @ Uds, В = 50 @ 25; Rds = 5 Ом @ 500 мA, 10 В; Tексп, °C = -55...+150; Ugs(th) = 3 @ 1000 мкА; TO-92-3 | auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000 Produktcode: 182880 | ST | Transistoren > MOSFET N-CH Gehäuse: TO-92 Uds,V: 60 V Idd,A: 0,32 A Rds(on), Ohm: 5 Ohm Ciss, pF/Qg, nC: 43/1,4 JHGF: THT | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000 | STMicroelectronics | Trans MOSFET N-CH 60V 0.35A 3-Pin TO-92 Bag | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000 | Diotec Electronics | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo | auf Bestellung 1870 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000 | DIOTEC SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.35W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Power dissipation: 0.35W Case: TO92 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhanced | auf Bestellung 36690 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000 | ON Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Bag | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000 | Vishay / Siliconix | MOSFET 60V 0.2A 0.4W | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000 | ONSEMI | Description: ONSEMI - 2N7000 - Leistungs-MOSFET, n-Kanal, 60 V, 200 mA, 5 ohm, TO-92, Durchsteckmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Verlustleistung: 400mW Gate-Source-Schwellenspannung, max.: 2.1V euEccn: NLR hazardous: false Drain-Source-Spannung Vds: 60V Drain-Source-Durchgangswiderstand: 5ohm rohsPhthalatesCompliant: YES Qualifikation: - Betriebstemperatur, max.: 150°C usEccn: EAR99 | auf Bestellung 843 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7000 | DIOTEC | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 2N7000-DIO 2N7000 DIOTEC T2N7000 DIOTEC Anzahl je Verpackung: 100 Stücke | auf Bestellung 2600 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7000 | DIOTEC SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.35W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Power dissipation: 0.35W Case: TO92 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhanced Anzahl je Verpackung: 10 Stücke | auf Bestellung 36690 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7000 | Diotec Electronics | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo | auf Bestellung 36780 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000 | ON Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Bag | auf Bestellung 5450 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7000 | Diotec Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo | auf Bestellung 1840 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000 AMO | NXP Semiconductors | MOSFET TRENCH 31V-99V G2 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000,126 | NXP USA Inc. | Description: MOSFET N-CH 60V 300MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 830mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000,126 | NXP Semiconductors | Trans MOSFET N-CH 60V 0.3A 3-Pin TO-92 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000-AP | Micro Commercial Co | Description: MOSFET N-CH 60V 200MA TO92 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000-D26Z | ON Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000-D26Z | onsemi / Fairchild | MOSFET N-CHANNEL 60V 200mA | auf Bestellung 31549 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7000-D26Z | ONSEMI | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Technology: DMOS Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 387 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7000-D26Z | ON Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 T/R | auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000-D26Z | ON Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000-D26Z | ONSEMI | Description: ONSEMI - 2N7000-D26Z - Leistungs-MOSFET, n-Kanal, 60 V, 200 mA, 5 ohm, TO-92, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 200mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.1V euEccn: NLR Verlustleistung: 400mW Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 5ohm | auf Bestellung 15520 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7000-D26Z | onsemi | Description: MOSFET N-CH 60V 200MA TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 15902 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7000-D26Z | ON Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 T/R | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7000-D26Z | ON Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 T/R | auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7000-D26Z | ON Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 T/R | auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000-D26Z | ON Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000-D26Z | onsemi | Description: MOSFET N-CH 60V 200MA TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7000-D26Z | ON Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000-D26Z | ONSEMI | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Technology: DMOS Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 387 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000-D74Z | onsemi | Description: MOSFET N-CH 60V 200MA TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 1609 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7000-D74Z | ON Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000-D74Z | ON Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000-D74Z | ONSEMI | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Technology: DMOS Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000-D74Z | onsemi | Description: MOSFET N-CH 60V 200MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 26000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7000-D74Z | onsemi / Fairchild | MOSFET N-CHANNEL 60V 200mA | auf Bestellung 32941 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7000-D74Z | ONSEMI | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Technology: DMOS Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000-D74Z | ON Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000-D75Z | ON Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000-D75Z | ONSEMI | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Technology: DMOS Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 1350 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000-D75Z | onsemi | Description: MOSFET N-CH 60V 200MA TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 2780 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7000-D75Z | onsemi / Fairchild | MOSFET N-CHANNEL 60V 200mA | auf Bestellung 4724 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7000-D75Z | ONSEMI | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Technology: DMOS Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 1350 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7000-D75Z | ON Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000-D75Z | onsemi | Description: MOSFET N-CH 60V 200MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7000-G | MICROCHIP | Description: MICROCHIP - 2N7000-G - Leistungs-MOSFET, n-Kanal, 60 V, 200 mA, 5 ohm, TO-92, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 200mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 1W Bauform - Transistor: TO-92 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 5ohm | auf Bestellung 2912 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7000-G | MICROCHIP TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; TO92 Mounting: THT Case: TO92 Type of transistor: N-MOSFET On-state resistance: 5Ω Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 0.2A Drain-source voltage: 60V Polarisation: unipolar Kind of package: bulk Anzahl je Verpackung: 1 Stücke | auf Bestellung 950 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7000-G | Microchip Technology | Trans MOSFET N-CH Si 60V 0.2A 3-Pin TO-92 Bag | auf Bestellung 950 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000-G | Microchip Technology | Trans MOSFET N-CH Si 60V 0.2A 3-Pin TO-92 Bag | auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7000-G | Microchip Technology | Trans MOSFET N-CH Si 60V 0.2A 3-Pin TO-92 Bag | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000-G | Microchip Technology | Description: MOSFET N-CH 60V 200MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Tj) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | auf Bestellung 2630 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7000-G | Microchip Technology | Trans MOSFET N-CH Si 60V 0.2A 3-Pin TO-92 Bag | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000-G | Microchip Technology | Trans MOSFET N-CH Si 60V 0.2A 3-Pin TO-92 Bag | auf Bestellung 1900 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000-G | Microchip Technology | Trans MOSFET N-CH Si 60V 0.2A 3-Pin TO-92 Bag | auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7000-G | MICROCHIP TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; TO92 Mounting: THT Case: TO92 Type of transistor: N-MOSFET On-state resistance: 5Ω Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 0.2A Drain-source voltage: 60V Polarisation: unipolar Kind of package: bulk | auf Bestellung 950 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000-G | Microchip Technology | Trans MOSFET N-CH Si 60V 0.2A 3-Pin TO-92 Bag | auf Bestellung 5325 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000-G Produktcode: 182408 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
2N7000-G | Microchip Technology | MOSFET 60V 5Ohm | auf Bestellung 10196 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7000-TA | Vishay | Vishay USE 2N7000KL-TR1 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000-TR1 | Vishay | Vishay USE 2N7000KL-TR1-E3 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N70002 Produktcode: 53073 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
2N70002 | NXP | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
2N7000; 190mA; 60V; 250mW; N-MOSFET; Корпус: TO-92; NXP | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||||
2N7000BU | onsemi | Description: MOSFET N-CH 60V 200MA TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 42309 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7000BU | ON Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Bulk | auf Bestellung 7684 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000BU | ONSEMI | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92 Type of transistor: N-MOSFET Technology: DMOS Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.11A Pulsed drain current: 1A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000BU | ON-Semicoductor | N-MOSFET 190mA 60V 250mW 2N7000BU (bulk) 2N7000 FAIRCHILD T2N7000 Anzahl je Verpackung: 100 Stücke | auf Bestellung 700 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7000BU | ONSEMI | Description: ONSEMI - 2N7000BU - Leistungs-MOSFET, n-Kanal, 60 V, 200 mA, 5 ohm, TO-226AA, Durchsteckmontage tariffCode: 85412100 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 200mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.9V euEccn: NLR Verlustleistung: 400mW Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 5ohm | auf Bestellung 9706 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7000BU | onsemi / Fairchild | MOSFET 60V N-Channel Sm Sig | auf Bestellung 21206 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7000BU | ONSEMI | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92 Type of transistor: N-MOSFET Technology: DMOS Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.11A Pulsed drain current: 1A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000BU | ON Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Bulk | auf Bestellung 7684 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000BU | ON Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Bulk | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000BU_T | onsemi | Description: MOSFET N-CH 60V 200MA TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000CSM | Semelab | Trans MOSFET N-CH 60V 0.2A 3-Pin CLLCC-1 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000CSM-JQR-A | Semelab | Trans MOSFET N-CH 60V 0.2A 3-Pin CLLCC-1 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000CSM.01 | Welwyn Components / TT Electronics | MOSFET PACIFIC SCIENTIFIC /COMPUTROL | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000G | onsemi | Description: MOSFET N-CH 60V 200MA TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000G | ON Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Box | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000G | ON Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Box | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000G | onsemi | MOSFET 60V 200mA N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000K | Rectron | TO-92 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000KL-TR1-E3 | Vishay | Trans MOSFET N-CH Si 60V 0.47A 3-Pin TO-226AA T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000L Produktcode: 175310 | Transistoren > MOSFET N-CH Gehäuse: TO-92 Uds,V: 60 V Idd,A: 0,15 mA Rds(on), Ohm: 1,7 Ohm Ciss, pF/Qg, nC: 20 / JHGF: THT | Produkt ist nicht verfügbar | ||||||||||||||||||||
2N7000PSTOA | Diodes Inc | Trans MOSFET N-CH Si 60V 0.2A 3-Pin E-Line | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000RLRA | onsemi | Description: MOSFET N-CH 60V 200MA TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000RLRA | ON | 05+06+ | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
2N7000RLRAG | ON Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000RLRAG | onsemi | Description: MOSFET N-CH 60V 200MA TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000RLRAG | ON Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000RLRAG | onsemi | Description: MOSFET N-CH 60V 200MA TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000RLRMG | ON Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Fan-Fold | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000RLRMG | onsemi | Description: MOSFET N-CH 60V 200MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000RLRMG | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
2N7000RLRPG | onsemi | Description: MOSFET N-CH 60V 200MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000RLRPG | ON Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Fan-Fold | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000TA | ON Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000TA | ONSEMI | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92 Type of transistor: N-MOSFET Technology: DMOS Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.11A Pulsed drain current: 1A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000TA | ONSEMI | Description: ONSEMI - 2N7000TA - Leistungs-MOSFET, n-Kanal, 60 V, 200 mA, 5 ohm, TO-226AA, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 60 Dauer-Drainstrom Id: 200 Rds(on)-Messspannung Vgs: 10 Verlustleistung Pd: 400 Bauform - Transistor: TO-226AA Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 5 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 3.9 SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000TA | ON Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000TA | onsemi | Description: MOSFET N-CH 60V 200MA TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 3945 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7000TA | ON Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000TA Produktcode: 173012 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
2N7000TA | onsemi / Fairchild | MOSFET 60V N-Channel Sm Sig | auf Bestellung 2858 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7000TA | ON Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000TA | onsemi | Description: MOSFET N-CH 60V 200MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7000TA | ONSEMI | Description: ONSEMI - 2N7000TA - Leistungs-MOSFET, n-Kanal, 60 V, 200 mA, 5 ohm, TO-226AA, Durchsteckmontage tariffCode: 85412100 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 60 Dauer-Drainstrom Id: 200 hazardous: false Qualifikation: - MSL: - usEccn: EAR99 Verlustleistung Pd: 400 Gate-Source-Schwellenspannung, max.: 3.9 euEccn: NLR Verlustleistung: 400 Bauform - Transistor: TO-226AA Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3 Produktpalette: - productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 5 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 5 SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000TA | ON Semiconductor | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000TA | ONSEMI | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92 Type of transistor: N-MOSFET Technology: DMOS Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.11A Pulsed drain current: 1A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7000TA+ | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
2N7000_Q | onsemi / Fairchild | MOSFET N-CHANNEL 60V 200mA | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7001 | auf Bestellung 2970 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
2N7001TDCKR | Texas Instruments | Voltage Level Translator 1-CH Unidirectional 5-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7001TDCKR Produktcode: 162137 | IC > IC Spannungs Supervisor, Akku-Laderegler | Produkt ist nicht verfügbar | ||||||||||||||||||||
2N7001TDCKR | Texas Instruments | Voltage Level Translator 1-CH Unidirectional 5-Pin SC-70 T/R | auf Bestellung 2095 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7001TDCKR | Texas Instruments | Voltage Level Translator 1-CH Unidirectional 5-Pin SC-70 T/R | auf Bestellung 2095 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7001TDCKR | Texas Instruments | Description: IC TRANSLATOR UNIDIR SC70-5 Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Data Rate: 100Mbps Supplier Device Package: SC-70-5 Channel Type: Unidirectional Output Signal: CMOS Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.65 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 3.6 V Input Signal: CMOS Part Status: Active Number of Circuits: 1 | auf Bestellung 59649 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7001TDCKR | Texas Instruments | Voltage Level Translator 1-CH Unidirectional 5-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7001TDCKR | Texas Instruments | Translation - Voltage Levels 1-bit dual-supply buffered voltage signal converter 5-SC70 -40 to 125 | auf Bestellung 25255 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7001TDCKR | Texas Instruments | Description: IC TRANSLATOR UNIDIR SC70-5 Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Data Rate: 100Mbps Supplier Device Package: SC-70-5 Channel Type: Unidirectional Output Signal: CMOS Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.65 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 3.6 V Input Signal: CMOS Part Status: Active Number of Circuits: 1 | auf Bestellung 54000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7001TDCKR | Texas Instruments | Voltage Level Translator 1-CH Unidirectional 5-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7001TDPWR | Texas Instruments | Voltage Level Translator 1-CH Unidirectional 4-Pin X2SON EP T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7001TDPWR | Texas Instruments | Description: IC TRANSLATOR UNIDIR 5X2SON Packaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Data Rate: 100Mbps Supplier Device Package: 5-X2SON (0.8x0.8) Channel Type: Unidirectional Output Signal: CMOS Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.65 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 3.6 V Input Signal: CMOS Part Status: Active Number of Circuits: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7001TDPWR | Texas Instruments | Translation - Voltage Levels 1-bit dual-supply buffered voltage signal converter 5-X2SON -40 to 125 | auf Bestellung 7189 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7001TDPWR | Texas Instruments | Voltage Level Translator 1-CH Unidirectional 4-Pin X2SON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7001TDPWR | Texas Instruments | Voltage Level Translator 1-CH Unidirectional 4-Pin X2SON EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7001TDPWR | Texas Instruments | Voltage Level Translator 1-CH Unidirectional 4-Pin X2SON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7001TDPWR | Texas Instruments | Description: IC TRANSLATOR UNIDIR 5X2SON Packaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Data Rate: 100Mbps Supplier Device Package: 5-X2SON (0.8x0.8) Channel Type: Unidirectional Output Signal: CMOS Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.65 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 3.6 V Input Signal: CMOS Part Status: Active Number of Circuits: 1 | auf Bestellung 1406 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7001TDPWR | Texas Instruments | Voltage Level Translator 1-CH Unidirectional 4-Pin X2SON EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7001TDPWR | Texas Instruments | Voltage Level Translator 1-CH Unidirectional 4-Pin X2SON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7001TDPWR-S | Texas Instruments | Description: PROTOTYPE Packaging: Bulk Package / Case: 4-XFDFN Exposed Pad Output Type: Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 5-X2SON (0.8x0.8) Channel Type: Unidirectional Output Signal: CMOS Translator Type: Voltage Level Voltage - VCCA: 1.65 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 3.6 V Input Signal: CMOS Part Status: Active Number of Circuits: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7001TEVM | Texas Instruments | 2N7001T Level Translator Evaluation Board | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7001TEVM | Texas Instruments | 2N7001T Level Translator Evaluation Board | auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7001TEVM | Texas Instruments | Other Development Tools 2N7001TEVM | auf Bestellung 1 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7001TEVM | Texas Instruments | Description: DEVELOPMENT INTERFACE Packaging: Bulk Function: Level Shifter Type: Interface Utilized IC / Part: 2N7001T Supplied Contents: Board(s) Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7001TQDCKRQ1 | Texas Instruments | Voltage Level Translator 1-CH Unidirectional Automotive 5-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7001TQDCKRQ1 | Texas Instruments | Description: IC TRANSLATOR UNIDIR SC70-5 Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: SC-70-5 Channel Type: Unidirectional Output Signal: CMOS Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.65 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 3.6 V Input Signal: CMOS Part Status: Active Number of Circuits: 1 | auf Bestellung 53186 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7001TQDCKRQ1 | Texas Instruments | Voltage Level Translator 1-CH Unidirectional Automotive 5-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7001TQDCKRQ1 | Texas Instruments | Translation - Voltage Levels Automotive 1-bit dual-supply buffered voltage signal translator 5-SC70 -40 to 125 | auf Bestellung 35958 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7001TQDCKRQ1 | Texas Instruments | Voltage Level Translator 1-CH Unidirectional Automotive 5-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7001TQDCKRQ1 | Texas Instruments | Description: IC TRANSLATOR UNIDIR SC70-5 Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: SC-70-5 Channel Type: Unidirectional Output Signal: CMOS Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.65 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 3.6 V Input Signal: CMOS Part Status: Active Number of Circuits: 1 | auf Bestellung 51000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7001TQDCKRQ1 | Texas Instruments | Voltage Level Translator 1-CH Unidirectional Automotive 5-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002 | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | Infineon Technologies | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002 | Diotec Electronics | Trans MOSFET N-CH 60V 0.28A 3-Pin SOT-23 T/R | auf Bestellung 723000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | LGE | Trans MOSFET N-CH 60V 0.115A 2N7002 LGE T2N7002 LGE Anzahl je Verpackung: 500 Stücke | auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002 | onsemi / Fairchild | MOSFET N-CHANNEL 60V 115mA | auf Bestellung 495009 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002 | GALAXY | Transistor N-Channel MOSFET; 60V; 60V; 20V; 13,5Ohm; 115mA; 200mW; -50°C ~ 150°C; Equivalent: 2N7002-7-F; 2N7002,215; 2N7002-T1-E3; 2N7002-T1-GE3; 2N7002TA; 2N7002LT1G; 2N7002LT3G; 2N7002LT7G; 2N7002H6327XTSA2; 2N7002-TP; 2N7002 GALAXY T2N7002 GAL Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002 | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002 | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.28A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 25 Stücke | auf Bestellung 163049 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002 | Diotec Electronics | Trans MOSFET N-CH 60V 0.28A 3-Pin SOT-23 T/R | auf Bestellung 163125 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 51000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | MLCCBASE | Transistor N-Channel MOSFET; 60V; 20V; 7Ohm; 115mA; 225mW; -50°C ~ 150°C; Equivalent: 2N7002-7-F; 2N7002,215; 2N7002-T1-E3; 2N7002-T1-GE3; 2N7002TA; 2N7002LT1G; 2N7002LT3G; 2N7002LT7G; 2N7002-TP; 2N7002 MLCCBASE T2N7002 MLC Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002 | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | Microchip Technology | MOSFET 60V 7.5Ohm | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002 | NTE Electronics, Inc. | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 | auf Bestellung 2800 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | onsemi | Description: MOSFET SOT23 N 60V 5OHM 150C Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 114501 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002 | HXY MOSFET | Transistor N-Channel MOSFET; 60V; 20V; 3Ohm; 300mA; 350mW; -55°C ~ 150°C; Equivalent: 2N7002-7-F; 2N7002,215; 2N7002-T1-E3; 2N7002-T1-GE3; 2N7002TA; 2N7002LT1G; 2N7002LT3G; 2N7002LT7G; 2N7002H6327XTSA2; 2N7002-TP; 2N7002 HXY MOSFET T2N7002 HXY Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002 | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 111330 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 25 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002 | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 75000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | ONSEMI | Description: ONSEMI - 2N7002 - Leistungs-MOSFET, n-Kanal, 60 V, 115 mA, 1.2 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: YES Verlustleistung: 200mW Anzahl der Pins: 3Pins euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 1.2ohm rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 | auf Bestellung 644274 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002 | Diotec Semiconductor | Trans MOSFET N-CH 60V 0.28A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002 | STMicroelectronics | Trans MOSFET N-CH 60V 0.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002 | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 10865 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | UMW | Transistor N-Channel MOSFET; 60V; 20V; 7Ohm; 115mA; 225mW; -50°C ~ 150°C; Equivalent: 2N7002-7-F; 2N7002,215; 2N7002-T1-E3; 2N7002-T1-GE3; 2N7002TA; 2N7002LT1G; 2N7002LT3G; 2N7002LT7G; 2N7002H6327XTSA2; 2N7002-TP; 2N7002 UMW T2N7002 UMW Anzahl je Verpackung: 1000 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002 | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 10865 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | Vishay / Siliconix | MOSFET RECOMMENDED ALT 2N7002E-T1-E3 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002 | Diotec Electronics | Trans MOSFET N-CH 60V 0.28A 3-Pin SOT-23 T/R | auf Bestellung 41999 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | Diotec Semiconductor | Description: MOSFET N-CH 60V 280MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 7792 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002 | JUXING | Transistor N-Channel MOSFET; 60V; 20V; 4Ohm; 300mA; 350mW; -55°C ~ 150°C; Equivalent: 2N7002-7-F; 2N7002,215; 2N7002-T1-E3; 2N7002-T1-GE3; 2N7002TA; 2N7002LT1G; 2N7002LT3G; 2N7002LT7G; 2N7002H6327XTSA2; 2N7002-TP; 2N7002 JUXING T2N7002 JUX Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002 | DIOTEC | Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.35W; SOT23 2N7002-DIO; 2N7002 SOT23 DIOTEC SEMICONDUCTOR T2N7002 DIOTEC | auf Bestellung 6000 Stücke: Lieferzeit 7-14 Tag (e) | |||||||||||||||||||
2N7002 | LUGUANG ELECTRONIC | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.225W Case: SOT23 On-state resistance: 3.75Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 720 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | Shenzhen Luguang Electronic Technology Co., Ltd. | MOSFET N-CH, Vds=60V, Id=300mA, SOT-23 | auf Bestellung 91143 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002 | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | Vishay | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002 | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 Produktcode: 179822 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
2N7002 | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002 | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 72000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | LGE | Trans MOSFET N-CH 60V 0.115A 2N7002 LGE T2N7002 LGE Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002 | Diotec Semiconductor | MOSFET MOSFET, SOT-23, 60V, 0.28A, 150C, N | auf Bestellung 203760 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002 | Yangjie Electronic Technology | N-Channel Enhancement Mode Field Effect Transistor | auf Bestellung 990000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | onsemi | Description: MOSFET SOT23 N 60V 5OHM 150C Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 114474 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002 | GALAXY | Transistor N-Channel MOSFET; 60V; 60V; 20V; 13,5Ohm; 115mA; 200mW; -50°C ~ 150°C; Equivalent: 2N7002-7-F; 2N7002,215; 2N7002-T1-E3; 2N7002-T1-GE3; 2N7002TA; 2N7002LT1G; 2N7002LT3G; 2N7002LT7G; 2N7002H6327XTSA2; 2N7002-TP; 2N7002 GALAXY T2N7002 GAL Anzahl je Verpackung: 500 Stücke | auf Bestellung 550 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002 | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.28A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 163049 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | LUGUANG ELECTRONIC | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.225W Case: SOT23 On-state resistance: 3.75Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | auf Bestellung 720 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002 | Diotec Electronics | Trans MOSFET N-CH 60V 0.28A 3-Pin SOT-23 T/R | auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | Diotec Semiconductor | Trans MOSFET N-CH 60V 0.28A 3-Pin SOT-23 T/R | auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002 | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | SLKOR | Transistor N-Channel MOSFET; 60V; 20V; 7,5Ohm; 115mA; 225mW; -55°C ~ 150°C; Equivalent: 2N7002-7-F; 2N7002,215; 2N7002-T1-E3; 2N7002-T1-GE3; 2N7002TA; 2N7002LT1G; 2N7002LT3G; 2N7002LT7G; 2N7002H6327XTSA2; 2N7002-TP; 2N7002 SLKOR T2N7002 SLK Anzahl je Verpackung: 500 Stücke | auf Bestellung 8910 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002 | HT Jinyu Semiconductor | N-Channel Enhancement Mode Power MOSFET | auf Bestellung 1755000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | STMicroelectronics | MOSFET N-Ch 60 Volt 0.20 A 1.8 Ohm STripFET | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002 | Diotec Electronics | Trans MOSFET N-CH 60V 0.28A 3-Pin SOT-23 T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | Diotec Semiconductor | Description: MOSFET N-CH 60V 280MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002 | JSMicro Semiconductor | Transistor N-Channel MOSFET; 60V; 60V; 20V; 13,5Ohm; 115mA; 200mW; -55°C ~ 150°C; Equivalent: 2N7002-7-F; 2N7002,215; 2N7002-T1-E3; 2N7002-T1-GE3; 2N7002TA; 2N7002LT1G; 2N7002LT3G; 2N7002LT7G; 2N7002H6327XTSA2; 2N7002-TP; 2N7002 JSMICRO T2N7002 JSM Anzahl je Verpackung: 500 Stücke | auf Bestellung 7850 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002 | YANGJIE TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.272A Pulsed drain current: 1.5A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 1700 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | YANGJIE TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.272A Pulsed drain current: 1.5A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 25 Stücke | auf Bestellung 1700 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002 | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | PanJit International | MOSFET N-CH, Vds=60V, Id=300mA, SOT-23 | auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002 | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | ONSEMI | Description: ONSEMI - 2N7002 - Leistungs-MOSFET, n-Kanal, 60 V, 115 mA, 1.2 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: YES Verlustleistung: 200mW Anzahl der Pins: 3Pins euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 1.2ohm rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 | auf Bestellung 644274 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002 | Diotec Semiconductor | Trans MOSFET N-CH 60V 0.28A 3-Pin SOT-23 T/R | auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002(Transistor) Produktcode: 47271 | Hottech | Transistoren > MOSFET N-CH Uds,V: 60 V Idd,A: 0,2 A Rds(on), Ohm: 2,8 Ohm Ciss, pF/Qg, nC: 43/1,4 JHGF: SMD | auf Bestellung 1099 Stück: Lieferzeit 21-28 Tag (e)erwartet 10000 Stück: 10000 Stück - erwartet | |||||||||||||||||||
2N7002 BK PBFREE | Central Semiconductor Corp | Description: MOSFET N-CH 60V 115MA SOT23 Packaging: Box Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): 40V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.59 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002 BK PBFREE | Central Semiconductor | MOSFET N-Ch Enh FET 80V 60Vdg 40Vgs | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002 BK PBFREE | Central Semiconductor | Trans MOSFET N-CH Si 60V 0.115A 3-Pin SOT-23 Box | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002 H6327 | Infineon Technologies | MOSFET N-Ch 60V 300mA SOT-23-3 | auf Bestellung 13420 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002 L6327 | Infineon Technologies | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002 L6327 | Infineon Technologies | Description: MOSFET N-CH 60V 300MA SOT-23 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002 T/R | PANJIT | 0604+ | auf Bestellung 1399 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
2N7002 TR PBFREE | Central Semiconductor | Trans MOSFET N-CH Si 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 TR PBFREE | Central Semiconductor Corp | Description: MOSFET N-CH 60V 115MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): 40V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 240572 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002 TR PBFREE | Central Semiconductor | Trans MOSFET N-CH Si 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 TR PBFREE | Central Semiconductor | MOSFET N-Ch 60V .2A | auf Bestellung 366696 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002 TR PBFREE | Central Semiconductor | Trans MOSFET N-CH Si 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002 TR PBFREE | Central Semiconductor Corp | Description: MOSFET N-CH 60V 115MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): 40V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 237000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002 TR TIN/LEAD | Central Semiconductor | MOSFET N-Ch 60Vds 60Vdg 40Vgs 350mW | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002 TR TIN/LEAD | Central Semiconductor | Trans MOSFET N-CH Si 60V 0.115A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002 TR13 PBFREE | Central Semiconductor Corp | Description: MOSFET N-CH 60V 115MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): 40V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.59 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002 TR13 PBFREE | Central Semiconductor Corp | Description: MOSFET N-CH 60V 115MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): 40V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.59 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 1253 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002 TR13 PBFREE | Central Semiconductor | Trans MOSFET N-CH Si 60V 0.115A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002 TR13 PBFREE | Central Semiconductor | MOSFET N-Ch Enh FET 80V 60Vdg 40Vgs | auf Bestellung 46405 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002 TR13 TIN/LEAD | Central Semiconductor | MOSFET N-Ch 60Vds 60Vdg 40Vgs 115mA 350mW | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002(12P) | PHILIPS | SOT-23 | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
2N7002(702) | auf Bestellung 548 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
2N7002,215 | Nexperia | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 1953000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002,215 | Nexperia | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 5786 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002,215 | Nexperia | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 5786 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002,215 | NEXPERIA | Description: NEXPERIA - 2N7002,215 - Leistungs-MOSFET, n-Kanal, 60 V, 300 mA, 2.8 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 300mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 830mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2.8ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1010023 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002,215 | Nexperia | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 29153 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002,215 | Nexperia USA Inc. | Description: MOSFET N-CH 60V 300MA TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 830mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | auf Bestellung 672109 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002,215 | Nexperia | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002,215 | NEXPERIA | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 4297 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002,215 | NXP/Nexperia/We-En | N-канальний ПТ; Udss, В = 60; Id = 0,3 А; Ptot, Вт = 0,83; Тип монт. = smd; Ciss, пФ @ Uds, В = 50 @ 10; Rds = 5 Ом @ 500 мА, 10 В; Tексп, °C = -65...+150; Ugs(th) = 2,5 В @ 250 мкА; SOT-23-3 | auf Bestellung 1440 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002,215 | Nexperia | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 1953000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002,215 | Nexperia | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 4297 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002,215 | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.19A; Idm: 1.2A; 830mW Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.19A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: SOT23; TO236AB Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 61455 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002,215 | NEXPERIA | Description: NEXPERIA - 2N7002,215 - Leistungs-MOSFET, n-Kanal, 60 V, 300 mA, 2.8 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 300mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 830mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2.8ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1010023 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002,215 | Nexperia | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 471000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002,215 | Nexperia | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 2631000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002,215 | Nexperia USA Inc. | Description: MOSFET N-CH 60V 300MA TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 830mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | auf Bestellung 669000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002,215 | Nexperia | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 627000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002,215 | NEXPERIA | Description: NEXPERIA - 2N7002,215 - Leistungs-MOSFET, n-Kanal, 60 V, 300 mA, 2.8 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 300mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 830mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2.8ohm | auf Bestellung 84000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002,215 | NEXPERIA | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 2631000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002,215 | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.19A; Idm: 1.2A; 830mW Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.19A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: SOT23; TO236AB Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 61455 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002,215 | Nexperia | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 627000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002,215 | Nexperia | MOSFET 2N7002/SOT23/TO-236AB | auf Bestellung 1161690 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002,215 | Nexperia | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 2631000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002,235 | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.19A; Idm: 1.2A; 0.83W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.19A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: SOT23; TO236AB Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002,235 | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.19A; Idm: 1.2A; 0.83W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.19A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: SOT23; TO236AB Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002,235 | Nexperia | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002,235 | Nexperia | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002,235 | Nexperia | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 310000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002,235 | Nexperia | MOSFET 2N7002/SOT23/TO-236AB | auf Bestellung 27529 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002,235 | Nexperia USA Inc. | Description: MOSFET N-CH 60V 300MA TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 830mW (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | auf Bestellung 8750 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002,235 | Nexperia | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002,235 | Nexperia | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 390000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002,235 | Nexperia USA Inc. | Description: MOSFET N-CH 60V 300MA TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 830mW (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002,235 | NEXPERIA | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 310000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002,235 | Nexperia | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 310000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-13-01-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-13-F | Diodes Incorporated | Description: DIODE Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-13-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-13-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-13-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R | auf Bestellung 9990 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-13-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-13-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-13-F | Diodes Inc | Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R | auf Bestellung 610000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002-13-F | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.21A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 20 Stücke | auf Bestellung 5960 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002-13-F | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.21A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 5960 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-13-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R | auf Bestellung 9990 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-13-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-13-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-13-F-79 | Diodes Incorporated | Description: DIODE Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-13P | Micro Commercial Components | Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-23 | auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-13P | Micro Commercial Components | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002-13P | Micro Commercial Components | Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-23 | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-13P | Micro Commercial Components | Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-23 | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-13P | Micro Commercial Components | Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-23 | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-13P | Micro Commercial Components | Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-23 | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-13P | Micro Commercial Components | Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-23 | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-7 | Diodes Incorporated | MOSFET 60V 200mW | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 115MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-7-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R | auf Bestellung 63000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-7-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-7-F | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.21A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 20 Stücke | auf Bestellung 5200 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002-7-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R | auf Bestellung 2898000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-7-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R | auf Bestellung 105000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-7-F | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.21A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 5200 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-7-F | MULTICOMP PRO | Description: MULTICOMP PRO - 2N7002-7-F - MOSFET, N CHANNEL, 60V, 1.2OHM, 115mA, SOT-23 tariffCode: 85412100 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 0 rohsCompliant: NO Dauer-Drainstrom Id: 0 hazardous: false rohsPhthalatesCompliant: NO Qualifikation: 0 MSL: 0 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 0 euEccn: NLR Verlustleistung: 0 Bauform - Transistor: SOT-23 Anzahl der Pins: 0 Produktpalette: Multicomp Pro Power MOSFET N Channel Transistors productTraceability: No Kanaltyp: N Channel Rds(on)-Prüfspannung: 0 Betriebstemperatur, max.: 0 Drain-Source-Durchgangswiderstand: 0 directShipCharge: 25 | auf Bestellung 2242 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002-7-F | DIODES/ZETEX | N-MOSFET 190mA 60V 250mW 2N7002,215 2N7002-T1-E3 2N7002TA 2N7002-7-F DIODES T2N7002 Anzahl je Verpackung: 3000 Stücke | auf Bestellung 119885 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002-7-F | Diodes Incorporated | Description: MOSFET N-CH 60V 115MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 584642 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002-7-F Produktcode: 186256 | CJ | Transistoren > MOSFET N-CH Gehäuse: SOT-23 Uds,V: 60 V Idd,A: 0,115 A Rds(on), Ohm: 7,5 Ohm JHGF: SMD | auf Bestellung 2422 Stück: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
2N7002-7-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R | auf Bestellung 63000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-7-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-7-F | DIODES INC. | Description: DIODES INC. - 2N7002-7-F - Leistungs-MOSFET, n-Kanal, 60 V, 115 mA, 13.5 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 115mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 300mW Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 13.5ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 295873 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002-7-F | Diodes Incorporated | MOSFET 60V 200mW | auf Bestellung 256479 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002-7-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R | auf Bestellung 2898000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-7-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-7-F | Diodes Inc | Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R | auf Bestellung 105000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002-7-F | Diodes INC. | N-канальний ПТ; Udss, В = 60; Id = 115 мА; Ciss, пФ @ Uds, В = 50 @ 25; Rds = 7,5 Ом @ 50 мA, 5 В; Ugs(th) = 2,5 В @ 250 мкА; Р, Вт = 0,37; Тексп, °C = -55...+150; Тип монт. = smd; SOT-23-3 | auf Bestellung 685 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-7-F | Diodes Incorporated | Description: MOSFET N-CH 60V 115MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 581983 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002-7-F Produktcode: 170068 | Diodes | Transistoren > MOSFET N-CH Uds,V: 60 V Idd,A: 0,115 A Rds(on), Ohm: 7,5 Ohm Ciss, pF/Qg, nC: 50/- JHGF: SMD | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-7-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R | auf Bestellung 105000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-7-F | DIODES INC. | Description: DIODES INC. - 2N7002-7-F - Leistungs-MOSFET, n-Kanal, 60 V, 115 mA, 13.5 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 115mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 300mW Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 13.5ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 295873 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002-7-F-50 | Diodes Zetex | Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-7-F-50 | Diodes Incorporated | Description: 2N7002 Family SOT23 T&R 3K Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-7-F-79 | Diodes Incorporated | Description: MOSFET N-CH 60V SOT23-3 Packaging: Tape & Reel (TR) Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-7-F. | MULTICOMP PRO | Description: MULTICOMP PRO - 2N7002-7-F. - MOSFET, N CHANNEL, 60V, 1.2OHM, 115mA, SOT-23, FULL REEL tariffCode: 85412900 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 0 rohsCompliant: NO Dauer-Drainstrom Id: 0 hazardous: false rohsPhthalatesCompliant: NO Qualifikation: 0 MSL: 0 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 0 euEccn: NLR Verlustleistung: 0 Bauform - Transistor: SOT-23 Anzahl der Pins: 0 Produktpalette: Multicomp Pro N Channel MOSFET Transistors productTraceability: No Kanaltyp: N Channel Rds(on)-Prüfspannung: 0 Betriebstemperatur, max.: 0 Drain-Source-Durchgangswiderstand: 0 directShipCharge: 25 | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002-7-F; 210mA; 60V; 0,3W; 7,5R; N-MOSFET; Корпус: SOT-23; DIODES Inc. | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||||
2N7002-7-G | Diodes Incorporated | Description: MOSFET N-CH 60V SOT23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-D87Z | ON Semiconductor / Fairchild | MOSFET N-Ch Enhancement Mode Field Effect | auf Bestellung 5087 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
2N7002-D87Z | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-D87Z | ON Semiconductor | Description: MOSFET N-CH 60V 0.115A SOT23 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-D87Z | ON Semiconductor | Description: MOSFET N-CH 60V 0.115A SOT23 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-E3 | Vishay Siliconix | Description: MOSFET N-CH 60V 115MA TO236 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-E3 | Vishay Siliconix | Description: MOSFET N-CH 60V 115MA TO236 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-F169 | onsemi | Description: 2N7002 - TRANSISTOR Packaging: Bulk Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-F169 | onsemi | Description: MOSFET N-CH 60V SOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 200mW (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-F169 | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-F2-0000HF | YY | Transistor N-Channel MOSFET; 60V; 20V; 3Ohm; 340mA; 350mW; -55°C~150°C; 2N7002 SOT23 YANGJIE T2N7002 YY | auf Bestellung 6000 Stücke: Lieferzeit 7-14 Tag (e) | |||||||||||||||||||
2N7002-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 60V 0.34A SOT-23-3L | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-F2-0000HF | Yangzhou Yangjie Electronic Technology Co., Ltd. | 2N7002 N-кан. MOSFET 60V, 0.34A, 0.35Вт, SOT-23 (SMD) | auf Bestellung 2486 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 60V 0.34A SOT-23-3L | auf Bestellung 1880 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002-G | Microchip Technology | Description: MOSFET N-CH 60V 115MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Tj) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 (TO-236AB) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 12918 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002-G | Microchip Technology | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-G | Microchip Technology | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-G | Microchip Technology | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 1025 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-G | Microchip Technology | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-G | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-G | Microchip Technology | MOSFET 60V 7.5Ohm | auf Bestellung 22037 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002-G | Microchip Technology | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 1025 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-G | Microchip Technology | Description: MOSFET N-CH 60V 115MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Tj) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 (TO-236AB) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002-G | Microchip Technology | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-G | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A | auf Bestellung 4970 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-G | Comchip Technology | Trans MOSFET N-CH 60V 0.25A 3-Pin SOT-23 T/R | auf Bestellung 51000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-G | Microchip Technology | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-G | MICROCHIP | Description: MICROCHIP - 2N7002-G - Leistungs-MOSFET, n-Kanal, 60 V, 115 mA, 7.5 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 115mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 360mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 7.5ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 11611 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002-G | Microchip Technology | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-G | MICROCHIP TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; SOT23-3 Mounting: SMD Case: SOT23-3 Type of transistor: N-MOSFET On-state resistance: 7.5Ω Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 0.5A Drain-source voltage: 60V Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | auf Bestellung 674 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002-G | Microchip Technology | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-G | onsemi | MOSFET FET 60V 5.0 OHM | auf Bestellung 224339 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002-G | MICROCHIP TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; SOT23-3 Mounting: SMD Case: SOT23-3 Type of transistor: N-MOSFET On-state resistance: 7.5Ω Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 0.5A Drain-source voltage: 60V Polarisation: unipolar | auf Bestellung 674 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-G | Microchip Technology | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-G | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-G | Microchip Technology | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-HF | Comchip Technology | Description: MOSFET N-CH 60V 0.25A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V | auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002-HF | Comchip Technology | N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-HF | Comchip Technology | Description: MOSFET N-CH 60V 0.25A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V | auf Bestellung 22333 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002-HF | Comchip Technology | N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-HF | Comchip Technology | MOSFET 0.25A 60V N-CHANNEL MOSFET | auf Bestellung 7016 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002-L | auf Bestellung 87000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
2N7002-L T/R | DIODES | 0841+ | auf Bestellung 87000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
2N7002-LT/R | PANJIT | SOT-23 08+ | auf Bestellung 2800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
2N7002-MTF | auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
2N7002-NL | FIARCHILD | 07+ | auf Bestellung 3010 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
2N7002-T1 | Vishay | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-T1 | Vishay / Siliconix | MOSFET RECOMMENDED ALT 781-2N7002K-GE3 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-T1 Produktcode: 15283 | Vishay | Transistoren > MOSFET N-CH Gehäuse: SOT-23 Uds,V: 60 Idd,A: 01.05.2000 Rds(on), Ohm: 07.05.2015 JHGF: SMD | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-T1-E3 | Vishay | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 591 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002-T1-E3 | Vishay | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-T1-E3 | Vishay / Siliconix | MOSFET 60V 0.115A 0.2W | auf Bestellung 579006 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002-T1-E3 | Vishay | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 14241 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-T1-E3 | Vishay | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 50794 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-T1-E3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | auf Bestellung 9590 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002-T1-E3 | Vishay | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-T1-E3 | Vishay | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 60V 115MA TO236 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 5188 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002-T1-E3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 9590 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-T1-E3 | Vishay | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 142 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002-T1-E3 | Vishay | Trans MOSFET N-CH 60V 0.115A 2N7002-T1-E3 VISHAY T2N7002 VIS Anzahl je Verpackung: 100 Stücke | auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002-T1-E3 | Vishay | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 1099 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-T1-E3 | Vishay | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-T1-E3 | Vishay | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-T1-E3 | Vishay | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 591 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 60V 115MA TO236 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002-T1-E3 | Vishay | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-T1-E3 | Vishay | Trans MOSFET N-CH 60V 0.115A 2N7002-T1-E3 VISHAY T2N7002 VIS Anzahl je Verpackung: 100 Stücke | auf Bestellung 6000 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002-T1-GE3 | Vishay | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 693 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 115MA TO236 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.08W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Pulsed drain current: 0.8A Power dissipation: 80mW Case: SOT23 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 1779 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.08W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Pulsed drain current: 0.8A Power dissipation: 80mW Case: SOT23 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | auf Bestellung 1779 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002-T1-GE3 | Vishay | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 123000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-T1-GE3 | Vishay | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 2924 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-T1-GE3 | Vishay | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 2924 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-T1-GE3 | Vishay | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 123000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 115MA TO236 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 6230 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002-T1-GE3 | Vishay | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-T1-GE3 | Vishay Semiconductors | MOSFET 60V 115mA 0.2W 7.5ohm @ 10V | auf Bestellung 601172 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002-T1-GE3 | Vishay | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 693 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-T1-GE3 | Vishay | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-T1/72 | VISHAY | auf Bestellung 102000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
2N7002-T1/72KBL | SI | auf Bestellung 2918 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
2N7002-T1/72N | SILICONIX | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
2N7002-T2 | Vishay | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-TP | Micro Commercial Components | Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-23 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-TP | Micro Commercial Components Corp. | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 2N7002-TP T2N7002-TP Anzahl je Verpackung: 3000 Stücke | auf Bestellung 6000 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002-TP | Micro Commercial Components | Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-TP | Micro Commercial Components | Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-23 T/R | auf Bestellung 951000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-TP | Micro Commercial Components | Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-23 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-TP | Micro Commercial Co | Description: MOSFET N-CH 60V 115MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 | auf Bestellung 53250 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002-TP | Micro Commercial Components | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002-TP | Micro Commercial Components | Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-23 T/R | auf Bestellung 1749000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-TP | Micro Commercial Components | Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002-TP | Micro Commercial Components | Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-23 T/R | auf Bestellung 459000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-TP | Micro Commercial Components | Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-23 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-TP | MICRO COMMERCIAL COMPONENTS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 2A; 1.08W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 2A Power dissipation: 1.08W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 1.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10 Stücke | auf Bestellung 54200 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002-TP | Micro Commercial Components | Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-23 T/R | auf Bestellung 1842000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-TP | Micro Commercial Components | Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-TP | Micro Commercial Components | Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-23 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-TP | Micro Commercial Components Corp. | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 2N7002-TP T2N7002-TP Anzahl je Verpackung: 3000 Stücke | auf Bestellung 15000 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002-TP | MICRO COMMERCIAL COMPONENTS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 2A; 1.08W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 2A Power dissipation: 1.08W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 1.7nC Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 54200 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-TP | Micro Commercial Components | Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-23 T/R | auf Bestellung 438000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-TP | Micro Commercial Components | Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-23 T/R | auf Bestellung 2001000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-TP | Micro Commercial Components | Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-TP | Micro Commercial Co | Description: MOSFET N-CH 60V 115MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 | auf Bestellung 53442 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002-TP | Micro Commercial Components | Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-TP | Micro Commercial Components | Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-23 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-TP | Micro Commercial Components | Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-23 T/R | auf Bestellung 2097000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-TP | Micro Commercial Components (MCC) | MOSFET 60V, 115mA | auf Bestellung 291234 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002-TP (2N7002-7-F) Produktcode: 39940 | MCC | Transistoren > MOSFET N-CH Gehäuse: SOT-23 Uds,V: 60 Idd,A: 01.05.2000 Rds(on), Ohm: 07.05.2015 Ciss, pF/Qg, nC: 50/ JHGF: SMD | verfügbar 139 Stück: |
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2N7002-TP-HF | Micro Commercial Components | Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-TP-HF | Micro Commercial Co | Description: Interface Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 10V Power Dissipation (Max): 1.08W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-TP-HF | Micro Commercial Components (MCC) | MOSFET N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002-TP-HF | Micro Commercial Components | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002.215 Produktcode: 73129 | NXP | Transistoren > MOSFET N-CH Gehäuse: TO-236AB Uds,V: 60 V Idd,A: 0,3 A Rds(on), Ohm: 2,8 Ohm JHGF: SMD | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002.215 | n-канальний польовий транзистор SOT-23 | auf Bestellung 14670 Stücke: Lieferzeit 7-21 Tag (e) | ||||||||||||||||||||
2N7002/12P | PHILIPS | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
2N7002/12W | PHILIPS | auf Bestellung 48000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
2N7002/7002 | 07+ SOT-23 | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
2N7002/702 | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
2N7002/G | PHILIPS | SOT-23 | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
2N7002/HAMR | Nexperia USA Inc. | Description: MOSFET N-CH 60V 300MA TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 830mW (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | auf Bestellung 51000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002/HAMR | Nexperia | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002/HAMR | Nexperia | MOSFET 2N7002/SOT23/TO-236AB | auf Bestellung 33932 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002/HAMR | Nexperia | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 402000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002/HAMR | NEXPERIA | Description: NEXPERIA - 2N7002/HAMR - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 3560000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002/HAMR | Nexperia | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002/HAMR | NEXPERIA | 60 V, 300 mA N-channel Trench MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002/HAMR | Nexperia USA Inc. | Description: MOSFET N-CH 60V 300MA TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 830mW (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | auf Bestellung 52258 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002/HAMR | Nexperia | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 402000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002/HAMR | Nexperia | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002/S711215 | NXP USA Inc. | Description: N-CHANNEL SMALL SIGNAL MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002702 | FAIRCHILD | 00+ 23 | auf Bestellung 5300 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
2N7002; 280mA; 60V; 350mW; 7,5R; N-MOSFET; Корпус: SOT-23; DIOTEC | auf Bestellung 688 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||||
2N7002A | Diotec Semiconductor | Trans MOSFET N-CH 60V 0.28A 3-Pin SOT-23 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002A | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 280mA; Idm: 1.2A; 350mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.28A Pulsed drain current: 1.2A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 25 Stücke | auf Bestellung 12650 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002A | Diotec Semiconductor | 2N7002A | auf Bestellung 57000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002A | Diotec Semiconductor | Trans MOSFET N-CH 60V 0.28A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002A | KEC | N-канальний ПТ; Udss, В = 60; Id = 115 мА; Ptot, Вт = 0,2; Тип монт. = smd; Ciss, пФ @ Uds, В = 20 @ 25; Tексп, °C = -55...+150; Ugs(th) = 0,88 В @ 115 мА; SOT-23-3 | auf Bestellung 84 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002A | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 280mA; Idm: 1.2A; 350mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.28A Pulsed drain current: 1.2A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 12650 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002A | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002A | Diotec Semiconductor | Description: MOSFET SOT23 N 60V 2OHM 150C Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 1011 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002A | Diotec Semiconductor | Trans MOSFET N-CH 60V 0.28A 3-Pin SOT-23 T/R | auf Bestellung 57000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002A | Diotec Semiconductor | Trans MOSFET N-CH 60V 0.28A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002A | YANGJIE TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.272A Pulsed drain current: 1.5A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 25 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002A | Diotec Semiconductor | MOSFET MOSFET, SOT-23, 60V, 0.28A, 150C, N | auf Bestellung 14635 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002A Produktcode: 161144 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
2N7002A | Diotec Semiconductor | Description: MOSFET SOT23 N 60V 2OHM 150C Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002A | Diotec Electronics | Trans MOSFET N-CH 60V 0.28A 3-Pin SOT-23 T/R | auf Bestellung 66000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002A | YANGJIE TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.272A Pulsed drain current: 1.5A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002A-13 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002A-13 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002A-13 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002A-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 180MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 5V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V | auf Bestellung 183000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002A-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002A-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 1041 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002A-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002A-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002A-7 | DIODES/ZETEX | Trans MOSFET N-CH 60V 0.22A Automotive 3-Pin SOT-23 T/R 2N7002A-7 T2N7002A-7 Diodes Anzahl je Verpackung: 500 Stücke | auf Bestellung 2620 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002A-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.14A; Idm: 0.8A; 0.37W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.14A Pulsed drain current: 0.8A Power dissipation: 0.37W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | auf Bestellung 2460 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002A-7 | DIODES INC. | Description: DIODES INC. - 2N7002A-7 - Leistungs-MOSFET, n-Kanal, 60 V, 180 mA, 3.5 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 180mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 370mW Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 370mW Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 3.5ohm Rds(on)-Prüfspannung: 5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 3.5ohm | auf Bestellung 4383 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002A-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002A-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002A-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002A-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 180MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 5V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V | auf Bestellung 185724 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002A-7 | Diodes Inc | Trans MOSFET N-CH 60V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002A-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002A-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 1041 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002A-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.14A; Idm: 0.8A; 0.37W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.14A Pulsed drain current: 0.8A Power dissipation: 0.37W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 10 Stücke | auf Bestellung 2460 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002A-7 | DIODES INC. | Description: DIODES INC. - 2N7002A-7 - Leistungs-MOSFET, n-Kanal, 60 V, 180 mA, 3.5 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 180mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 370mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 3.5ohm | auf Bestellung 4383 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002A-7 | Diodes Incorporated | MOSFET N-CHANNEL ENHANCEMENT MODE | auf Bestellung 120630 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002A-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002A-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002A-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 280mA; Idm: 1.2A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.28A Pulsed drain current: 1.2A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002A-AQ | Diotec Semiconductor | Description: MOSFET, SOT-23, 60V, 0.28A, 150 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002A-AQ | Diotec Semiconductor | Trans MOSFET N-CH 60V 0.28A Automotive AEC-Q101 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002A-AQ | Diotec Semiconductor | MOSFET MOSFET, SOT-23, 60V, 0.28A, 150C, N, AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002A-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 280mA; Idm: 1.2A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.28A Pulsed drain current: 1.2A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 25 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 60V 0.34A SOT-23-3L | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 60V 0.34A SOT-23-3L | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002A-RTK/P | KEC | SOT23 | auf Bestellung 8770 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
2N7002A-TP | Micro Commercial Components (MCC) | MOSFET N-Ch 60Vds 30Vgs 40Vgsm 115mA 300mW | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002A-TP | Micro Commercial Components | Trans MOSFET N-CH 100V 90A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002A-TP | Micro Commercial Co | Description: N-CHANNEL MOSFET SOT-23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Power Dissipation (Max): 300mW Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 3274 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002A-TP | Micro Commercial Components | Trans MOSFET N-CH 100V 90A 3-Pin SOT-23 T/R | auf Bestellung 573000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002A-TP | Micro Commercial Components | Trans MOSFET N-CH 100V 90A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002A-TP | Micro Commercial Co | Description: N-CHANNEL MOSFET SOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Power Dissipation (Max): 300mW Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002A/7002 | N/A | 08+ SOT-23 | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
2N7002AK | Diodes Zetex | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AK | Diodes Inc | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002AK | Diodes Zetex | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AK-QR | NEXPERIA | N-channel Trench MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002AKW-QX | Nexperia | MOSFET MOSFET-LOW VOLT SOT323/SC-70 | auf Bestellung 5900 Stücke: Lieferzeit 61-75 Tag (e) |
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2N7002AQ-13 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 200000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AQ-13 | DIODES INC. | Description: DIODES INC. - 2N7002AQ-13 - Leistungs-MOSFET, n-Kanal, 60 V, 180 mA, 3.5 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 180mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 370mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 3.5ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 9975 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002AQ-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 180MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 115mA, 10V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 130000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002AQ-13 | Diodes Incorporated | MOSFET 2N7002 Family | auf Bestellung 14144 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002AQ-13 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002AQ-13 | Diodes Inc | Trans MOSFET N-CH 60V 0.22A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002AQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.37W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Power dissipation: 0.37W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Application: automotive industry | auf Bestellung 6380 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AQ-13 | DIODES INC. | Description: DIODES INC. - 2N7002AQ-13 - Leistungs-MOSFET, n-Kanal, 60 V, 180 mA, 3.5 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 180mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 370mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 3.5ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 9975 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002AQ-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 180MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 115mA, 10V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 137095 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002AQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.37W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Power dissipation: 0.37W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Application: automotive industry Anzahl je Verpackung: 10 Stücke | auf Bestellung 6380 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002AQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 579000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 2181000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 2742000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 54000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 417000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AQ-7 | Diodes Inc | Trans MOSFET N-CH 60V 0.22A Automotive 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002AQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.37W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Power dissipation: 0.37W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Application: automotive industry | auf Bestellung 1900 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 1677000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 2063 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 2063 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AQ-7 | DIODES INC. | Description: DIODES INC. - 2N7002AQ-7 - Leistungs-MOSFET, n-Kanal, 60 V, 180 mA, 3.5 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 180mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 370mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 3.5ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2985 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002AQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 2736000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AQ-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 180MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 115mA, 10V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2421000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002AQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.37W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Power dissipation: 0.37W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Application: automotive industry Anzahl je Verpackung: 5 Stücke | auf Bestellung 1900 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002AQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 222000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 753000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002AQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 2361000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 777000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 54000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 483000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002AQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 2160000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 2922000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 1005000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 222000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 858000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 935 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002AQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 3120000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AQ-7 | DIODES INC. | Description: DIODES INC. - 2N7002AQ-7 - Leistungs-MOSFET, n-Kanal, 60 V, 180 mA, 3.5 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 180mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 370mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 3.5ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2985 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002AQ-7 | Diodes Incorporated | MOSFET 2N7002 Family | auf Bestellung 100268 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002AQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002AQ-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 180MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 115mA, 10V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2422409 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002AQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 204000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002B-TP | Micro Commercial Components (MCC) | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002B-TP | Micro Commercial Co | Description: MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 340mA Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Power Dissipation (Max): 300mW Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002BK | Nexperia | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002BK Produktcode: 73117 | Verschiedene Bauteile > Other components 3 | Produkt ist nicht verfügbar | ||||||||||||||||||||
2N7002BK,215 | Nexperia | Trans MOSFET N-CH 60V 0.35A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 69000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BK,215 | Nexperia | Trans MOSFET N-CH 60V 0.35A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 25861 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BK,215 | NEXPERIA | Description: NEXPERIA - 2N7002BK,215 - Leistungs-MOSFET, n-Kanal, 60 V, 350 mA, 1 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 350mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 440mW Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 157462 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002BK,215 | Nexperia USA Inc. | Description: MOSFET N-CH 60V 350MA TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 811000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002BK,215 | NXP | Trans MOSFET N-CH 60V 0.350A 2N7002BK T2N7002bk Anzahl je Verpackung: 100 Stücke | auf Bestellung 5500 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002BK,215 | Nexperia | Trans MOSFET N-CH 60V 0.35A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 66000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BK,215 | Nexperia | Trans MOSFET N-CH 60V 0.35A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 78000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BK,215 | Nexperia | Trans MOSFET N-CH 60V 0.35A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 78000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BK,215 | Nexperia | Trans MOSFET N-CH 60V 0.35A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 66000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BK,215 | NEXPERIA | Description: NEXPERIA - 2N7002BK,215 - Leistungs-MOSFET, n-Kanal, 60 V, 350 mA, 1 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 350mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 440mW Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 157462 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002BK,215 | NXP | Транз. Пол. ММ N-FET ПТ SOT23 Vds=60V, 350 mA | auf Bestellung 2683 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BK,215 | Nexperia | Trans MOSFET N-CH 60V 0.35A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 69000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BK,215 | Nexperia | Trans MOSFET N-CH 60V 0.35A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 25861 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BK,215 | Nexperia | MOSFET 2N7002BK/SOT23/TO-236AB | auf Bestellung 1562435 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002BK,215 | Nexperia USA Inc. | Description: MOSFET N-CH 60V 350MA TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 826852 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002BK,215 | NEXPERIA | Trans MOSFET N-CH 60V 0.35A Automotive 3-Pin SOT-23 T/R | auf Bestellung 78000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002BK,215 | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.245A; Idm: 1.2A; 1.2W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.245A Pulsed drain current: 1.2A Power dissipation: 1.2W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | auf Bestellung 15162 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BK,215 | Nexperia | Trans MOSFET N-CH 60V 0.35A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 36531 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BK,215 | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.245A; Idm: 1.2A; 1.2W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.245A Pulsed drain current: 1.2A Power dissipation: 1.2W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke | auf Bestellung 15162 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002BKM,315 | Nexperia USA Inc. | Description: MOSFET N-CH 60V 450MA DFN1006-3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-883 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002BKM,315 | NEXPERIA | Trans MOSFET N-CH 60V 0.45A Automotive 3-Pin DFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002BKM,315 | Nexperia | Trans MOSFET N-CH 60V 0.45A Automotive 3-Pin DFN T/R | auf Bestellung 345 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKM,315 | Nexperia USA Inc. | Description: MOSFET N-CH 60V 450MA DFN1006-3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-883 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002BKM/V,315 | NXP Semiconductors | Description: NEXPERIA 2N7002BKM - SMALL SIGNA Packaging: Bulk | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002BKM/VYL | Nexperia | Trans MOSFET N-CH 60V 0.45A Automotive 3-Pin DFN | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002BKM315 | Nexperia USA Inc. | Description: NOW NEXPERIA 2N7002BKM - SMALL S Packaging: Bulk Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-883 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002BKMB,315 | NEXPERIA | Trans MOSFET N-CH 60V 0.45A Automotive 3-Pin DFN-B T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002BKMB,315 | Nexperia | Trans MOSFET N-CH 60V 0.45A Automotive 3-Pin DFN-B T/R | auf Bestellung 380 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKMB,315 | Nexperia USA Inc. | Description: MOSFET N-CH 60V 450MA DFN1006B-3 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 450mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: DFN1006B-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002BKMB,315 | Nexperia USA Inc. | Description: MOSFET N-CH 60V 450MA DFN1006B-3 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 450mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: DFN1006B-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002BKS | Nexperia | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002BKS,115 | Nexperia | Trans MOSFET N-CH 60V 0.3A 6-Pin TSSOP T/R Automotive AEC-Q101 | auf Bestellung 219000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKS,115 | Nexperia | Trans MOSFET N-CH 60V 0.3A 6-Pin TSSOP T/R Automotive AEC-Q101 | auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002BKS,115 | NEXPERIA | Description: NEXPERIA - 2N7002BKS,115 - Leistungs-MOSFET, n-Kanal, 60 V, 300 mA, 1 ohm, SOT-363, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 300mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 295mW Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1ohm | auf Bestellung 44339 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002BKS,115 | NXP | 2xN-MOSFET 60V 0.3A 2N7002BKS,115 2N7002BKS,115 T2N7002bks Anzahl je Verpackung: 100 Stücke | auf Bestellung 1720 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002BKS,115 | Nexperia | Trans MOSFET N-CH 60V 0.3A 6-Pin TSSOP T/R Automotive AEC-Q101 | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKS,115 | NEXPERIA | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 60V; 0.215A; Idm: 1.2A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.215A Pulsed drain current: 1.2A Power dissipation: 445mW Case: SC88; SOT363; TSSOP6 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | auf Bestellung 1960 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKS,115 | Nexperia USA Inc. | Description: MOSFET 2N-CH 60V 0.3A 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 295mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 6-TSSOP Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 256910 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002BKS,115 | Nexperia | Trans MOSFET N-CH 60V 0.3A 6-Pin TSSOP T/R Automotive AEC-Q101 | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKS,115 | NEXPERIA | Trans MOSFET N-CH 60V 0.3A Automotive 6-Pin TSSOP T/R | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002BKS,115 | Nexperia | Trans MOSFET N-CH 60V 0.3A 6-Pin TSSOP T/R Automotive AEC-Q101 | auf Bestellung 348000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKS,115 | NEXPERIA | Description: NEXPERIA - 2N7002BKS,115 - Leistungs-MOSFET, n-Kanal, 60 V, 300 mA, 1 ohm, SOT-363, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 300mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 295mW Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1ohm | auf Bestellung 44339 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002BKS,115 | NEXPERIA | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 60V; 0.215A; Idm: 1.2A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.215A Pulsed drain current: 1.2A Power dissipation: 445mW Case: SC88; SOT363; TSSOP6 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke | auf Bestellung 1960 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002BKS,115 | Nexperia | Trans MOSFET N-CH 60V 0.3A 6-Pin TSSOP T/R Automotive AEC-Q101 | auf Bestellung 219000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKS,115 | Nexperia | Trans MOSFET N-CH 60V 0.3A 6-Pin TSSOP T/R Automotive AEC-Q101 | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKS,115 | Nexperia | MOSFET 2N7002BKS/SOT363/SC-88 | auf Bestellung 84813 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002BKS,115 | Nexperia USA Inc. | Description: MOSFET 2N-CH 60V 0.3A 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 295mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 6-TSSOP Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 252000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002BKS,115 | Nexperia | Trans MOSFET N-CH 60V 0.3A 6-Pin TSSOP T/R Automotive AEC-Q101 | auf Bestellung 348000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKS.115 Produktcode: 109130 | NXP | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002BKS/DG/B2115 | Nexperia USA Inc. | Description: N-CHANNEL SMALL SIGNAL MOSFET Packaging: Bulk Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002BKS/ZLX | Nexperia USA Inc. | Description: MOSFET 2N-CH 60V 0.3A 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.04W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 6-TSSOP Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002BKSH | Nexperia USA Inc. | Description: 2N7002BKS/SOT363/SC-88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 295mW (Ta), 1.04W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 6-TSSOP Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002BKSH | Nexperia | Trans MOSFET N-CH 60V 0.3A 6-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002BKSH | Nexperia | MOSFET MOSFET-LOW VOLT SOT363/SC-88 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002BKSH | Nexperia USA Inc. | Description: 2N7002BKS/SOT363/SC-88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 295mW (Ta), 1.04W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 6-TSSOP Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002BKT,115 | NXP USA Inc. | Description: MOSFET N-CH 60V 290MA SC75 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 290mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 260mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SC-75 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002BKT,115 | NEXPERIA | Trans MOSFET N-CH 60V 0.29A Automotive 3-Pin SC-75 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002BKT,115 | NXP USA Inc. | Description: MOSFET N-CH 60V 290MA SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 290mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 260mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SC-75 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002BKV,115 | NEXPERIA | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 60V; 0.24A; Idm: 1.2A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.24A Pulsed drain current: 1.2A Power dissipation: 0.525W Case: SOT666 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | auf Bestellung 3565 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKV,115 | Nexperia | MOSFET NRND for Automotive Applications 2N7002BKV/SOT666/SOT6 | auf Bestellung 102123 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002BKV,115 | Nexperia | Trans MOSFET N-CH 60V 0.34A 6-Pin SOT-666 T/R | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKV,115 | Nexperia | Trans MOSFET N-CH 60V 0.34A 6-Pin SOT-666 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKV,115 | Nexperia USA Inc. | Description: MOSFET 2N-CH 60V 340MA SOT666 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-666 Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q101 | auf Bestellung 39749 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002BKV,115 | Nexperia | Trans MOSFET N-CH 60V 0.34A 6-Pin SOT-666 T/R | auf Bestellung 516000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKV,115 | NEXPERIA | Description: NEXPERIA - 2N7002BKV,115 - Dual-MOSFET, n-Kanal, 60 V, 340 mA, 1 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: -A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: -V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 340mA Drain-Source-Durchgangswiderstand, p-Kanal: -ohm Verlustleistung, p-Kanal: -W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOT-666 Anzahl der Pins: 6Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter Drain-Source-Durchgangswiderstand, n-Kanal: 1ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 525mW Betriebstemperatur, max.: 150°C | auf Bestellung 21545 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002BKV,115 | Nexperia | Trans MOSFET N-CH 60V 0.34A 6-Pin SOT-666 T/R | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKV,115 | Nexperia | Trans MOSFET N-CH 60V 0.34A 6-Pin SOT-666 T/R | auf Bestellung 7958 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKV,115 | Nexperia USA Inc. | Description: MOSFET 2N-CH 60V 340MA SOT666 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-666 Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q101 | auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002BKV,115 | Nexperia | Trans MOSFET N-CH 60V 0.34A 6-Pin SOT-666 T/R | auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKV,115 | Nexperia | Trans MOSFET N-CH 60V 0.34A 6-Pin SOT-666 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKV,115 | NEXPERIA | Trans MOSFET N-CH 60V 0.34A Automotive 6-Pin SOT-666 T/R | auf Bestellung 516000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002BKV,115 | NEXPERIA | Description: NEXPERIA - 2N7002BKV,115 - Dual-MOSFET, n-Kanal, 60 V, 340 mA, 1 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: -A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: -V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 340mA Drain-Source-Durchgangswiderstand, p-Kanal: -ohm Verlustleistung, p-Kanal: -W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOT-666 Anzahl der Pins: 6Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter Drain-Source-Durchgangswiderstand, n-Kanal: 1ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 525mW Betriebstemperatur, max.: 150°C | auf Bestellung 21545 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002BKV,115 | Nexperia | Trans MOSFET N-CH 60V 0.34A 6-Pin SOT-666 T/R | auf Bestellung 516000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKV,115 | NEXPERIA | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 60V; 0.24A; Idm: 1.2A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.24A Pulsed drain current: 1.2A Power dissipation: 0.525W Case: SOT666 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke | auf Bestellung 3565 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002BKV,115 | Nexperia | Trans MOSFET N-CH 60V 0.34A 6-Pin SOT-666 T/R | auf Bestellung 7958 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKV/DG/B2115 | NXP USA Inc. | Description: N-CHANNEL SMALL SIGNAL MOSFET Packaging: Bulk Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002BKVL | Nexperia USA Inc. | Description: MOSFET N-CH 60V 350MA TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 27998 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002BKVL | NEXPERIA | Description: NEXPERIA - 2N7002BKVL - Leistungs-MOSFET, n-Kanal, 60 V, 350 mA, 1 ohm, TO-236AB, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 350mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Verlustleistung Pd: 370mW Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 370mW Bauform - Transistor: TO-236AB Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 1ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1ohm SVHC: No SVHC (17-Jan-2023) | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002BKVL | Nexperia | Trans MOSFET N-CH 60V 0.35A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKVL | Nexperia | Trans MOSFET N-CH 60V 0.35A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKVL | NEXPERIA | Trans MOSFET N-CH 60V 0.35A Automotive 3-Pin SOT-23 T/R | auf Bestellung 13622 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002BKVL | Nexperia USA Inc. | Description: MOSFET N-CH 60V 350MA TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002BKVL | Nexperia | Trans MOSFET N-CH 60V 0.35A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 13622 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKVL | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.245A; Idm: 1.2A; 1.2W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.245A Pulsed drain current: 1.2A Power dissipation: 1.2W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke | auf Bestellung 4214 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002BKVL | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.245A; Idm: 1.2A; 1.2W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.245A Pulsed drain current: 1.2A Power dissipation: 1.2W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | auf Bestellung 4214 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKVL | NEXPERIA | Description: NEXPERIA - 2N7002BKVL - Leistungs-MOSFET, n-Kanal, 60 V, 350 mA, 1 ohm, TO-236AB, Oberflächenmontage tariffCode: 85412100 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Verlustleistung: 370mW Kanaltyp: n-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 1ohm rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 SVHC: No SVHC (17-Jan-2023) | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002BKVL | Nexperia | MOSFET 2N7002BK/SOT23/TO-236AB | auf Bestellung 213983 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002BKVL | Nexperia | Trans MOSFET N-CH 60V 0.35A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKVL | Nexperia | Trans MOSFET N-CH 60V 0.35A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 13622 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKW | Nexperia | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002BKW,115 | Nexperia | Trans MOSFET N-CH 60V 0.31A Automotive AEC-Q101 3-Pin SC-70 T/R | auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKW,115 | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.215A; Idm: 1.2A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.215A Pulsed drain current: 1.2A Power dissipation: 0.33W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke | auf Bestellung 17738 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002BKW,115 | Nexperia USA Inc. | Description: MOSFET N-CH 60V 310MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 275mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 32260 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002BKW,115 | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.215A; Idm: 1.2A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.215A Pulsed drain current: 1.2A Power dissipation: 0.33W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | auf Bestellung 17738 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKW,115 | NEXPERIA | Description: NEXPERIA - 2N7002BKW,115 - Leistungs-MOSFET, n-Kanal, 60 V, 310 mA, 1 ohm, SOT-323, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 310mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 275mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 12804 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002BKW,115 | Nexperia | Trans MOSFET N-CH 60V 0.31A Automotive AEC-Q101 3-Pin SC-70 T/R | auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKW,115 | Nexperia | Trans MOSFET N-CH 60V 0.31A Automotive AEC-Q101 3-Pin SC-70 T/R | auf Bestellung 5908 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKW,115 | NXP | N-MOSFET 60V 310mA 275mW 1.6Ω 2N7002BKW NXP T2N7002bkw Anzahl je Verpackung: 100 Stücke | auf Bestellung 1740 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002BKW,115 | Nexperia | Trans MOSFET N-CH 60V 0.31A Automotive AEC-Q101 3-Pin SC-70 T/R | auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKW,115 | Nexperia USA Inc. | Description: MOSFET N-CH 60V 310MA SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 275mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002BKW,115 | Nexperia | Trans MOSFET N-CH 60V 0.31A Automotive AEC-Q101 3-Pin SC-70 T/R | auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKW,115 | NXP/Nexperia/We-En | N-канальний ПТ; Udss, В = 60; Id = 310 мА; Ciss, пФ @ Uds, В = 50 @ 10; Qg, нКл = 0,6; Rds = 1.6 @ 500mA, 10V Ом; Ugs(th) = 2,1 @ 250µA В; Р, Вт = 0,275 (Ta); Тексп, °C = -55...+150; Тип монт. = smd; SOT-323 | auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKW,115 | NEXPERIA | Description: NEXPERIA - 2N7002BKW,115 - Leistungs-MOSFET, n-Kanal, 60 V, 310 mA, 1 ohm, SOT-323, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 310mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 275mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 12804 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002BKW,115 | Nexperia | MOSFET 2N7002BKW/SOT323/SC-70 | auf Bestellung 66537 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002BKW,115 | Nexperia | Trans MOSFET N-CH 60V 0.31A Automotive AEC-Q101 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002BKW,115 | Nexperia | Trans MOSFET N-CH 60V 0.31A Automotive AEC-Q101 3-Pin SC-70 T/R | auf Bestellung 5908 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002BKW,115 | NEXPERIA | Trans MOSFET N-CH 60V 0.31A Automotive 3-Pin SC-70 T/R | auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002CK | Nexperia | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002CK | NXP | N-MOSFET 60V 300mA 350mW 2N7002CK,215 T2N7002ck Anzahl je Verpackung: 100 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002CK | Nexperia USA Inc. | Description: 2N7002 - SMALL SIGNAL FIELD-EFFE Packaging: Bulk Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002CK | Nexperia Inc. | MOSFET N-CH, Vds=60V, Id=300mA, SOT-23 | auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002CK,215 | Nexperia | MOSFET Trans MOSFET N-CH 60V 0.3A 3-Pin | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002CK,215 | Nexperia | Trans MOSFET N-CH 60V 0.3A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002CK,215 | NXP/Nexperia/We-En | N-канальний ПТ; Udss, В = 60; Id = 300 мА; Ptot, Вт = 0,35; Тип монт. = smd; Ciss, пФ @ Uds, В = 55 @ 25; Qg, нКл = 1,3 @ 4,5 В; Rds = 1,6 Ом @ 500 мА, 10 В; Tексп, °C = -55...+150; Ugs(th) = 2,5 В @ 250 мкА; SOT-23-3 | auf Bestellung 4284 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002CK,215 | Nexperia USA Inc. | Description: MOSFET N-CH 60V 300MA TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002CK,215 | Nexperia | Trans MOSFET N-CH 60V 0.3A Automotive 3-Pin SOT-23 T/R | auf Bestellung 474 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002CK,215 | NEXPERIA | Trans MOSFET N-CH 60V 0.3A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002CK,215 | NXP | Транз. Пол. MOSFET N-CH 60V 0.3A SOT-23 | auf Bestellung 2935 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002CKVL | NEXPERIA | Trans MOSFET N-CH 60V 0.3A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002CKVL | Nexperia | MOSFET 60V N-CHANNEL 0.3A | auf Bestellung 10000 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
2N7002CKVL | Nexperia | Trans MOSFET N-CH 60V 0.3A Automotive 3-Pin SOT-23 T/R | auf Bestellung 280000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002CKVL | Nexperia USA Inc. | Description: MOSFET N-CH 60V 300MA TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002CSM | Semelab | Trans MOSFET N-CH 60V 0.115A 3-Pin CLLCC-1 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002CSM-QR-EBC | Semelab | Trans MOSFET N-CH 60V 0.115A 3-Pin LCC-1 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002D87Z | Fairchild Semiconductor | Description: N-CHANNEL SMALL SIGNAL MOSFET Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 200mW (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DS6 | Rectron USA | Description: MOSFET 2 N-CH 60V 250MA SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: SOT-363-6L Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DW | ONSEMI | Description: ONSEMI - 2N7002DW - Dual-MOSFET, n-Kanal, 60 V, 60 V, 115 mA, 115 mA, 1.6 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 115mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 60V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 115mA Drain-Source-Durchgangswiderstand, p-Kanal: 1.6ohm Verlustleistung, p-Kanal: 200mW Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 1.6ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 200mW Betriebstemperatur, max.: 150°C | auf Bestellung 234643 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002DW | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 6-Pin SC-88 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DW | onsemi / Fairchild | MOSFET N-Chan Enhancement Mode Field Effect | auf Bestellung 138557 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002DW | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DW | ONSEMI | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | auf Bestellung 6110 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002DW | onsemi | Description: MOSFET 2N-CH 60V 0.115A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 200mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SC-88 (SC-70-6) Part Status: Active | auf Bestellung 38288 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002DW | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 6-Pin SC-88 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DW | ONSEMI | Description: ONSEMI - 2N7002DW - Dual-MOSFET, n-Kanal, 60 V, 60 V, 115 mA, 115 mA, 1.6 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 115mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 60V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 115mA Drain-Source-Durchgangswiderstand, p-Kanal: 1.6ohm Verlustleistung, p-Kanal: 200mW Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 1.6ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 200mW Betriebstemperatur, max.: 150°C | auf Bestellung 234643 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002DW Produktcode: 174754 | IC > IC andere | Produkt ist nicht verfügbar | ||||||||||||||||||||
2N7002DW | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 6-Pin SC-88 T/R | auf Bestellung 2945 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002DW | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 6-Pin SC-88 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DW | onsemi | Description: MOSFET 2N-CH 60V 0.115A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 200mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SC-88 (SC-70-6) Part Status: Active | auf Bestellung 38288 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002DW | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 6-Pin SC-88 T/R | auf Bestellung 2945 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DW | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DW | ONSEMI | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 6110 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DW | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 6-Pin SC-88 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002DW | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 6-Pin SC-88 T/R | auf Bestellung 360000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DW H6327 | Infineon Technologies | MOSFET N-Ch 60V 300mA SOT-363-6 | auf Bestellung 182304 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002DW K72.. | DIODES/ZETEX | Transistor 2xN-Channel MOSFET; 60V; 60V; 20V; 13,5Ohm; 115mA; 200mW; -55°C ~ 150°C; 2N7002DW-7-F 2N7002DW T2N7002dw Anzahl je Verpackung: 100 Stücke | auf Bestellung 300 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002DW L6327 | Infineon Technologies | MOSFET N-Ch 60V 300mA SOT-363-6 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DW L6327 | Infineon Technologies | Description: MOSFET 2N-CH 60V 0.3A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PG-SOT363-PO Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DW-13-G | Diodes Incorporated | Description: MOSFET 2N-CH 60V SOT-363 Packaging: Tape & Reel (TR) Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DW-7 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.23A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 310mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 230mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-363 Part Status: Discontinued at Digi-Key | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DW-7 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.23A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 310mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 230mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-363 Part Status: Discontinued at Digi-Key | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DW-7 | Diodes Incorporated | MOSFET 60V 200mW | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DW-7-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.23A 6-Pin SOT-363 T/R | auf Bestellung 261000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DW-7-F Produktcode: 143738 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
2N7002DW-7-F | Diodes Inc | Trans MOSFET N-CH 60V 0.23A 6-Pin SOT-363 T/R | auf Bestellung 78000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002DW-7-F | DIODES INC. | Description: DIODES INC. - 2N7002DW-7-F - Dual-MOSFET, n-Kanal, 60 V, 115 mA, 13.5 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: -A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: -V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 115mA Drain-Source-Durchgangswiderstand, p-Kanal: -ohm Verlustleistung, p-Kanal: -W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 13.5ohm productTraceability: Yes-Date/Lot Code Verlustleistung, n-Kanal: 200mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 199004 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002DW-7-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.23A 6-Pin SOT-363 T/R | auf Bestellung 78000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DW-7-F | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.23A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 310mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 230mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-363 Part Status: Active | auf Bestellung 174000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002DW-7-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.23A 6-Pin SOT-363 T/R | auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002DW-7-F | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.14A; 0.12W; SOT363 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.14A Power dissipation: 0.12W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DW-7-F | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.14A; 0.12W; SOT363 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.14A Power dissipation: 0.12W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10 Stücke | auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002DW-7-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.23A 6-Pin SOT-363 T/R | auf Bestellung 78000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DW-7-F | Diodes Incorporated | MOSFET 60V 200mW | auf Bestellung 418091 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002DW-7-F | DIODES INC. | Description: DIODES INC. - 2N7002DW-7-F - Dual-MOSFET, n-Kanal, 60 V, 115 mA, 13.5 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: -A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: -V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 115mA Drain-Source-Durchgangswiderstand, p-Kanal: -ohm Verlustleistung, p-Kanal: -W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 13.5ohm productTraceability: Yes-Date/Lot Code Verlustleistung, n-Kanal: 200mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 199004 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002DW-7-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.23A 6-Pin SOT-363 T/R | auf Bestellung 315000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DW-7-F | Diodes Inc | Trans MOSFET N-CH 60V 0.23A 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DW-7-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.23A 6-Pin SOT-363 T/R | auf Bestellung 315000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DW-7-F | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.23A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 310mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 230mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-363 Part Status: Active | auf Bestellung 176385 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002DW-7-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.23A 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DW-7-F-79 | Diodes Incorporated | Description: MOSFET 2N-CH 60V SOT-363 Packaging: Tape & Reel (TR) Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DW-7-F. | MULTICOMP PRO | Description: MULTICOMP PRO - 2N7002DW-7-F. - MOSFET, DUAL N CHANNEL, 60V, 4.4OHM, 115mA, SOT-363-6 tariffCode: 85412100 rohsCompliant: NO Dauer-Drainstrom Id, p-Kanal: 0 hazardous: false rohsPhthalatesCompliant: NO Qualifikation: 0 Drain-Source-Spannung Vds, p-Kanal: 0 MSL: MSL 1 - Unlimited usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 0 Drain-Source-Durchgangswiderstand, p-Kanal: 0 Verlustleistung, p-Kanal: 0 Drain-Source-Spannung Vds, n-Kanal: 0 euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 0 Produktpalette: Multicomp Pro MOSFET, N Channel Drain-Source-Durchgangswiderstand, n-Kanal: 0 productTraceability: No Kanaltyp: N Channel Verlustleistung, n-Kanal: 0 Betriebstemperatur, max.: 0 directShipCharge: 25 | auf Bestellung 13063 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002DW-7-G | Diodes Incorporated | Description: MOSFET 2N-CH 60V SOT-363 Packaging: Tape & Reel (TR) Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DW-G | onsemi | MOSFET FET 60V 2.0 MOHM | auf Bestellung 4 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002DW-G | onsemi | Description: MOSFET 2N-CH 60V 0.115A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 200mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Last Time Buy | auf Bestellung 5144 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002DW-G | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DW-G | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A 6-Pin SC-88 | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DW-G | onsemi | Description: MOSFET 2N-CH 60V 0.115A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 200mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Last Time Buy | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DW-TP | MICRO COMMERCIAL COMPONENTS | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.215A; 0.3W; SOT363 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.215A Power dissipation: 0.3W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 1.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | auf Bestellung 3850 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002DW-TP | Micro Commercial Components | Trans MOSFET N-CH 60V 0.34A 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DW-TP | Micro Commercial Components | Trans MOSFET N-CH 60V 0.34A 6-Pin SOT-363 T/R | auf Bestellung 201000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DW-TP | Micro Commercial Components | Trans MOSFET N-CH 60V 0.34A 6-Pin SOT-363 T/R | auf Bestellung 201000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DW-TP | Micro Commercial Co | Description: MOSFET 2N-CH 60V 0.115A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 200mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-363 Part Status: Active | auf Bestellung 1223600 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002DW-TP | Micro Commercial Components | Trans MOSFET N-CH 60V 0.34A 6-Pin SOT-363 T/R | auf Bestellung 201000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DW-TP | Micro Commercial Components (MCC) | MOSFET Dual N-CH 60V 115mA | auf Bestellung 38363 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002DW-TP | Micro Commercial Components | Trans MOSFET N-CH 60V 0.34A 6-Pin SOT-363 T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DW-TP | Micro Commercial Co | Description: MOSFET 2N-CH 60V 0.115A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 200mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-363 Part Status: Active | auf Bestellung 1221000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002DW-TP | Micro Commercial Components | Trans MOSFET N-CH 60V 0.115A 6-Pin SOT-363 T/R | auf Bestellung 201000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002DW-TP | MICRO COMMERCIAL COMPONENTS | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.215A; 0.3W; SOT363 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.215A Power dissipation: 0.3W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 1.1nC Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 3850 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DW-TPQ2 | Micro Commercial Co | Description: MOSFET 2N-CH 60V 0.34A SOT363 Packaging: Bulk Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-363 Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DW-TPQ2 | Micro Commercial Components | Dual N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DW-TPQ2 | Micro Commercial Components (MCC) | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DW1T1G | ON | SOT-363 05+ | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
2N7002DW1T1G | LRC | SOT363 | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
2N7002DWA-7 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.18A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180mA Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-363 Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DWA-7 | Diodes Inc | Trans MOSFET N-CH 60V 0.2A 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DWA-7 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.18A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180mA Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-363 Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DWAQ-7 | Diodes Inc | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DWAQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.2A Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DWAQ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.18A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DWAQ-7 | Diodes Incorporated | MOSFET 2N7002 Family SOT363 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DWH6327XT | Infineon Technologies | MOSFET N-Ch 60V 300mA SOT-363-6 | auf Bestellung 14849 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002DWH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 60V 0.3A 6-Pin SOT-363 T/R Automotive AEC-Q101 | auf Bestellung 96000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DWH6327XTSA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 0.3A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PG-SOT363-PO Part Status: Active | auf Bestellung 104817 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002DWH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 60V 0.3A 6-Pin SOT-363 T/R Automotive AEC-Q101 | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DWH6327XTSA1 | Infineon Technologies | MOSFET N-Ch 60V 300mA SOT-363-6 | auf Bestellung 132885 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002DWH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 60V 0.3A 6-Pin SOT-363 T/R Automotive AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DWH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 60V 0.3A 6-Pin SOT-363 T/R Automotive AEC-Q101 | auf Bestellung 177325 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DWH6327XTSA1 | INFINEON | Description: INFINEON - 2N7002DWH6327XTSA1 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 300 mA, 300 mA, 1.6 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 300mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 60V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 300mA Drain-Source-Durchgangswiderstand, p-Kanal: 1.6ohm Verlustleistung, p-Kanal: 500mW Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 1.6ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 500mW Betriebstemperatur, max.: 150°C | auf Bestellung 121685 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002DWH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 60V 0.3A 6-Pin SOT-363 T/R Automotive AEC-Q101 | auf Bestellung 96000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DWH6327XTSA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 0.3A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PG-SOT363-PO Part Status: Active | auf Bestellung 102900 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002DWH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 60V 0.3A 6-Pin SOT-363 T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DWH6327XTSA1 | INFINEON TECHNOLOGIES | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 0.5W; PG-SOT-363 Type of transistor: N-MOSFET x2 Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.5W Case: PG-SOT-363 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Kind of channel: enhanced | auf Bestellung 8515 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DWH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 60V 0.3A 6-Pin SOT-363 T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DWH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 60V 0.3A 6-Pin SOT-363 T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DWH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 60V 0.3A 6-Pin SOT-363 T/R Automotive AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DWH6327XTSA1 | INFINEON TECHNOLOGIES | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 0.5W; PG-SOT-363 Type of transistor: N-MOSFET x2 Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.5W Case: PG-SOT-363 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 8515 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002DWH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 60V 0.3A 6-Pin SOT-363 T/R Automotive AEC-Q101 | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DWH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 60V 0.3A Automotive 6-Pin SOT-363 T/R | auf Bestellung 96000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002DWH6327XTSA1 | INFINEON | Description: INFINEON - 2N7002DWH6327XTSA1 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 300 mA, 300 mA, 1.6 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 300mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 60V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 300mA Drain-Source-Durchgangswiderstand, p-Kanal: 1.6ohm Verlustleistung, p-Kanal: 500mW Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 1.6ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 500mW Betriebstemperatur, max.: 150°C | auf Bestellung 121685 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002DWK-13 | Diodes Inc | 2N7002 Family SOT363 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DWK-13 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.261A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 330mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 261mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-363 Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DWK-13 | Diodes Incorporated | MOSFET 2N7002 Family SOT363 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DWK-7 | Diodes Inc | 2N7002 Family SOT363 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DWK-7 | Diodes Zetex | Dual N-Channel Enhancement Mode MOSFET | auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DWK-7 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.261A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 330mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 261mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-363 Part Status: Active | auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002DWK-7 | Diodes Incorporated | MOSFET 2N7002 Family SOT363 T&R 3K | auf Bestellung 2452 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002DWK-7 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.261A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 330mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 261mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-363 | auf Bestellung 35989 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002DWKX-13 | Diodes Incorporated | Description: MOSFET 2N-CH 60V SOT-363 Packaging: Tape & Reel (TR) Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DWKX-7 | Diodes Incorporated | Description: MOSFET 2N-CH 60V SOT-363 Packaging: Tape & Reel (TR) Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DWL-TP | Micro Commercial Co | Description: MOSFET 2N-CH 60V 0.115A SOT23-6L Packaging: Bulk Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 225mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DWL-TP | Micro Commercial Components | Dual N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DWL-TP | Micro Commercial Components (MCC) | MOSFET Dual N-CHANNEL MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DWL6327XT | Infineon Technologies | Trans MOSFET N-CH 60V 0.3A Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DWQ-13-F | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.23A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 310mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002DWQ-13-F | Diodes Incorporated | MOSFET 2N7002 Family SOT363 T&R 10K | auf Bestellung 9879 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002DWQ-13-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.23A Automotive AEC-Q101 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DWQ-13-F | Diodes Inc | Trans MOSFET N-CH 60V 0.23A Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DWQ-7-F | Diodes Incorporated | MOSFET 60V Dual N-Ch Enh 7.5Ohm 5V Vgs 0.23A | auf Bestellung 213016 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002DWQ-7-F | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.14A; Idm: 0.8A; 0.31W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.14A Pulsed drain current: 0.8A Power dissipation: 0.31W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DWQ-7-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.23A Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DWQ-7-F | DIODES INC. | Description: DIODES INC. - 2N7002DWQ-7-F - Dual-MOSFET, n-Kanal, 60 V, 60 V, 230 mA, 230 mA, 4.4 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 230mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 60V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 230mA Drain-Source-Durchgangswiderstand, p-Kanal: 4.4ohm Verlustleistung, p-Kanal: 400mW Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 4.4ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 400mW Betriebstemperatur, max.: 150°C | auf Bestellung 3354 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002DWQ-7-F | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.23A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 310mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 230mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-363 Part Status: Active | auf Bestellung 42777 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002DWQ-7-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.23A Automotive AEC-Q101 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DWQ-7-F | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.14A; Idm: 0.8A; 0.31W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.14A Pulsed drain current: 0.8A Power dissipation: 0.31W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DWQ-7-F | Diodes Inc | Trans MOSFET N-CH 60V 0.23A Automotive 6-Pin SOT-363 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002DWQ-7-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.23A Automotive AEC-Q101 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DWQ-7-F | DIODES INC. | Description: DIODES INC. - 2N7002DWQ-7-F - Dual-MOSFET, n-Kanal, 60 V, 60 V, 230 mA, 230 mA, 4.4 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 230mA Dauer-Drainstrom Id, p-Kanal: 230mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 60V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 230mA Drain-Source-Durchgangswiderstand, p-Kanal: 4.4ohm Verlustleistung, p-Kanal: 400mW Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 4.4ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 400mW Betriebstemperatur, max.: 150°C | auf Bestellung 3354 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002DWQ-7-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.23A Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DWQ-7-F | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.23A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 310mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 230mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-363 Part Status: Active | auf Bestellung 42000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002DWQ-7-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.23A Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DWS-7 | Diodes Inc | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DWS-7 | Diodes Zetex | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | auf Bestellung 117000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002DWS-7 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.247A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 290mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 247mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-363 | auf Bestellung 120000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002DWS-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002DWS-7 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.247A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 290mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 247mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-363 | auf Bestellung 120000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002DWT/R | PANJIT | SOT-363 09+ | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
2N7002E | onsemi | MOSFET NFET SOT23 60V 115MA 7MO | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002E | Panasonic Electronic Components | Description: MOSFET N-CH 60V 300MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002E | SILICONIX | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
2N7002E | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002E | Panasonic | MOSFET Nch MOSFET 60V 0.3A RDS(on)=3ohms SOT-23 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002E | NXP | SOT23/SOT323 | auf Bestellung 1772 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
2N7002E | Vishay | Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002E | Panasonic Electronic Components | Description: MOSFET N-CH 60V 300MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002E | Vishay / Siliconix | MOSFET RECOMMENDED ALT 781-2N7002E-T1-E3 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002E,215 | NEXPERIA | Trans MOSFET N-CH 60V 0.385A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002E,215 | Nexperia USA Inc. | Description: MOSFET N-CH 60V 385MA TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 385mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Power Dissipation (Max): 830mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002E,215 | Nexperia | MOSFET TAPE7 MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002E,215 | Nexperia USA Inc. | Description: MOSFET N-CH 60V 385MA TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 385mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Power Dissipation (Max): 830mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002E-7 | Diodes Incorporated | MOSFET N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002E-7-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 72000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002E-7-F | Diodes Incorporated | Description: MOSFET N-CH 60V 250MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 11023 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002E-7-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002E-7-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002E-7-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002E-7-F | DIODES INC. | Description: DIODES INC. - 2N7002E-7-F - Leistungs-MOSFET, n-Kanal, 60 V, 250 mA, 1.6 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 250mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Verlustleistung Pd: 370mW Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 370mW Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3Pins Produktpalette: 2N7002E productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 1.6ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.6ohm | auf Bestellung 13566 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002E-7-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 156000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002E-7-F | Diodes Incorporated | Description: MOSFET N-CH 60V 250MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002E-7-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002E-7-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 69000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002E-7-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 66000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002E-7-F | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.37W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Power dissipation: 0.37W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 4080 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002E-7-F | DIODES INC. | Description: DIODES INC. - 2N7002E-7-F - Leistungs-MOSFET, n-Kanal, 60 V, 250 mA, 1.6 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 250mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 370mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pins Produktpalette: 2N7002E productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.6ohm | auf Bestellung 13566 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002E-7-F | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.37W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Power dissipation: 0.37W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 20 Stücke | auf Bestellung 4080 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002E-7-F | Diodes Inc | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002E-7-F | Diodes Incorporated | MOSFET N-Channel | auf Bestellung 31158 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002E-7-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002E-7-F | Diodes Zetex | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002E-7-F-79 | Diodes Incorporated | Description: DIODE Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002E-7-G | Diodes Incorporated | Description: MOSFET N-CH 60V SOT23 Packaging: Tape & Reel (TR) Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002E-E3 | Vishay | Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002E-T1 SOT23-7E | VISHAY | auf Bestellung 1698 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
2N7002E-T1-E3 | Vishay | Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 T/R | auf Bestellung 179 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002E-T1-E3 | VISHAY | 2006 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
2N7002E-T1-E3 | Vishay / Siliconix | MOSFET 60V 0.24A | auf Bestellung 424545 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002E-T1-E3 | Vishay | Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002E-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 60V 240MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V | auf Bestellung 2192 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002E-T1-E3 | VISHAY | 09+ | auf Bestellung 1394018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
2N7002E-T1-E3 | VISHAY | SOT23 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
2N7002E-T1-E3 | Vishay | Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 T/R | auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002E-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 60V 240MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002E-T1-E3 | VISHAY | Description: VISHAY - 2N7002E-T1-E3 - N CHANNEL MOSFET, 60V, 240mA TO-236 tariffCode: 85412900 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 0 rohsCompliant: YES Dauer-Drainstrom Id: 0 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: 0 MSL: MSL 1 - Unlimited usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 0 euEccn: NLR Verlustleistung: 0 Bauform - Transistor: TO-236 Anzahl der Pins: 0 Produktpalette: 0 productTraceability: No Kanaltyp: N Channel Rds(on)-Prüfspannung: 0 Betriebstemperatur, max.: 0 Drain-Source-Durchgangswiderstand: 0 directShipCharge: 25 SVHC: No SVHC (17-Jan-2023) | auf Bestellung 4555 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002E-T1-E3 | VISHAY | auf Bestellung 187460 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
2N7002E-T1-GE3 | Vishay | Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002E-T1-GE3 | Vishay Semiconductors | MOSFET 60V 240mA 0.35W 3.0ohm @ 10V | auf Bestellung 175464 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002E-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 240MA TO236 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002E-T1-GE3 | Vishay | Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002E-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.24A; Idm: 1.3A; 0.22W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.24A Pulsed drain current: 1.3A Power dissipation: 0.22W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002E-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.24A; Idm: 1.3A; 0.22W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.24A Pulsed drain current: 1.3A Power dissipation: 0.22W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002E-T1-GE3 | Vishay | Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 T/R | auf Bestellung 111000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002E-T1-GE3 | Vishay | Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 T/R | auf Bestellung 2810 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002E-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 240MA TO236 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V | auf Bestellung 15495 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002E-T1-GE3 Produktcode: 167495 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
2N7002E-T1-GE3 | Vishay | Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 T/R | auf Bestellung 111000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002EDWT/R | PANJIT | SOT-363 09+ | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
2N7002EPT | 06+ SOT-323 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
2N7002EQ-13-F | Diodes Incorporated | Description: 2N7002 FAMILY SOT23 T&R 10K Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 292mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002EQ-13-F | Diodes Incorporated | MOSFET 2N7002 Family SOT23 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002EQ-7-F | Diodes Zetex | N-Channel Enhancement Mode MOSFET Automotive AEC-Q101 | auf Bestellung 84000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002EQ-7-F | Diodes Incorporated | MOSFET 2N7002 Family SOT23 T&R 3K | auf Bestellung 3000 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002EQ-7-F | Diodes Inc | 2N7002 Family SOT23 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002EQ-7-F | Diodes Incorporated | Description: 2N7002 FAMILY SOT23 T&R 3K Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 292mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 84000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002ET1 | auf Bestellung 5580315 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
2N7002ET1G | ON Semiconductor | Trans MOSFET N-CH 60V 0.26A 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002ET1G | onsemi | Description: MOSFET N-CH 60V 260MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V Power Dissipation (Max): 300mW (Tj) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.81 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 26.7 pF @ 25 V | auf Bestellung 494388 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002ET1G | ONSEMI | Description: ONSEMI - 2N7002ET1G - Leistungs-MOSFET, n-Kanal, 60 V, 310 mA, 0.86 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 310mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 420mW Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.86ohm | auf Bestellung 60452 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002ET1G | ON Semiconductor | Trans MOSFET N-CH 60V 0.26A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002ET1G | ON Semiconductor | Trans MOSFET N-CH 60V 0.26A 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002ET1G | ON Semiconductor | N-канальний ПТ; Udss, В = 60; Id = 260 мА; Ptot, Вт = 0,3; Тип монт. = smd; Ciss, пФ @ Uds, В = 26,7 @ 25; Qg, нКл = 0,81 @ 5 В; Rds = 2,5 Ом @ 240 мA, 10 В; Tексп, °C = -55...+150; Ugs(th) = 2,5 В @ 250 мкA; SOT-23-3 | auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002ET1G | ON Semiconductor | Trans MOSFET N-CH 60V 0.26A 3-Pin SOT-23 T/R | auf Bestellung 279000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002ET1G | onsemi | Description: MOSFET N-CH 60V 260MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V Power Dissipation (Max): 300mW (Tj) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.81 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 26.7 pF @ 25 V | auf Bestellung 486000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002ET1G | ONSEMI | Description: ONSEMI - 2N7002ET1G - Leistungs-MOSFET, n-Kanal, 60 V, 310 mA, 0.86 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 310mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 420mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.86ohm | auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002ET1G | ON Semiconductor | Trans MOSFET N-CH 60V 0.26A 3-Pin SOT-23 T/R | auf Bestellung 37662 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002ET1G | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.2A; 0.42W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.22A Pulsed drain current: 1.2A Power dissipation: 0.42W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 0.81nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10 Stücke | auf Bestellung 649 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002ET1G | ONSEMI | Description: ONSEMI - 2N7002ET1G - Leistungs-MOSFET, n-Kanal, 60 V, 310 mA, 0.86 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 310mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 420mW Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.86ohm | auf Bestellung 60452 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002ET1G | onsemi | MOSFET NFET SOT23 60V 310mA 2.5Ohms | auf Bestellung 676118 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002ET1G | ON Semiconductor | Trans MOSFET N-CH 60V 0.26A 3-Pin SOT-23 T/R | auf Bestellung 37662 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002ET1G | ON-Semicoductor | N-MOSFET 60V 260mA 2N7002ET1G T2N7002et1g Anzahl je Verpackung: 100 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002ET1G | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.2A; 0.42W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.22A Pulsed drain current: 1.2A Power dissipation: 0.42W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 0.81nC Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 649 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002ET3G | onsemi | Description: MOSFET N-CH 60V 260MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V Power Dissipation (Max): 300mW (Tj) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.81 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 26.7 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002ET3G | ON Semiconductor | Trans MOSFET N-CH 60V 0.26A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002ET7G | ONS | Транз. Пол. ММ N-FET ПТ SOT23 Vds=60V, Id=0.18A, Rds=5Ohm, Vgs=3V, P=0.25W, smd. | auf Bestellung 3633 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002ET7G | onsemi | Description: MOSFET N-CH 60V 260MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V Power Dissipation (Max): 300mW (Tj) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.81 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V | auf Bestellung 66500 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002ET7G | ON Semiconductor | Trans MOSFET N-CH 60V 0.26A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002ET7G | onsemi | MOSFET Small Signal MOSFET 60V 310mA 2.5 Ohm Single N-Channel SOT-23 | auf Bestellung 462694 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002ET7G | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 220mA; Idm: 1.2A; 0.42W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.22A Pulsed drain current: 1.2A Power dissipation: 0.42W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 0.81nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | auf Bestellung 2220 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002ET7G | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 220mA; Idm: 1.2A; 0.42W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.22A Pulsed drain current: 1.2A Power dissipation: 0.42W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 0.81nC Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 2220 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002ET7G | ON Semiconductor | Trans MOSFET N-CH 60V 0.26A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002ET7G | onsemi | Description: MOSFET N-CH 60V 260MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V Power Dissipation (Max): 300mW (Tj) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.81 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V | auf Bestellung 71928 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002EW | AnBon | Transistor N-Channel MOSFET; 60V; 20V; 5,3Ohm; 340mA; 200mW; -55°C~150°C; 2N7002EW T2N7002EW ANB Anzahl je Verpackung: 50 Stücke | auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002EY | ANBON SEMICONDUCTOR (INT'L) LIMITED | Description: N-CHANNEL SMD MOSFET ESD PROTECT Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 30 V | auf Bestellung 17624 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002EY | Anbon Semiconductor | 2N7002EY | auf Bestellung 258000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002EY | ANBON SEMICONDUCTOR (INT'L) LIMITED | Description: N-CHANNEL SMD MOSFET ESD PROTECT Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 30 V | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002F | NXP | 08+ROHS SOT-23 | auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
2N7002F | PHILIPS | 0551+ | auf Bestellung 2147 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
2N7002F,215 | NEXPERIA | Trans MOSFET N-CH 60V 0.475A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002F,215 | Nexperia | Nexperia N-CH TRNCH 60V .475A | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002F,215 | Nexperia USA Inc. | Description: MOSFET N-CH 60V 475MA TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 475mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 830mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002F,215 | Nexperia USA Inc. | Description: MOSFET N-CH 60V 475MA TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 475mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 830mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002H | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002H | SOT23/SOT323 | auf Bestellung 913 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
2N7002H | Nexperia | MOSFET 2N7002H/SOT23/TO-236AB | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002H-13 | Diodes Inc | N-Channel Enhancement Mode Mosfet | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002H-13 | Diodes Incorporated | MOSFET 60V N-Ch Enh FET 7.5Ohm 5Vgs 210mA | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002H-13 | Diodes Zetex | Trans MOSFET N-CH 60V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002H-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 170MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002H-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 170MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 25 V | auf Bestellung 1115023 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002H-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.37W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.21A Power dissipation: 0.37W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 20 Stücke | auf Bestellung 11700 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002H-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.37W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.21A Power dissipation: 0.37W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 11700 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002H-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 1296000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002H-7 | Diodes Inc | Trans MOSFET N-CH 60V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002H-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 1281000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002H-7 | Diodes Incorporated | MOSFET 60V N-Ch Enh FET 7.5Ohm 5Vgs 210mA | auf Bestellung 58746 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002H-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002H-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 170MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 25 V | auf Bestellung 1113000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002H-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R | auf Bestellung 1269000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002H-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R | auf Bestellung 2975 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002H-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 1263000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002H-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R | auf Bestellung 1275000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002H-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R | auf Bestellung 2975 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002H6327 | Infineon technologies | auf Bestellung 22270 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
2N7002H6327XT | Infineon Technologies | SP000868322 | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002H6327XT | Infineon Technologies | MOSFET N-Ch 60V 300mA SOT-23-3 | auf Bestellung 35681 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002H6327XTSA2 | Infineon | N-MOSFET 60V 0.3A 2N7002H6327XTSA2 Infineon T2N7002h Anzahl je Verpackung: 500 Stücke | auf Bestellung 5910 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 38725 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 22147 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002H6327XTSA2 | Infineon Technologies | Description: MOSFET N-CH 60V 300MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V | auf Bestellung 102000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002H6327XTSA2 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.5W Case: PG-SOT23 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 15013 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 153000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002H6327XTSA2 | INFINEON | Description: INFINEON - 2N7002H6327XTSA2 - Leistungs-MOSFET, n-Kanal, 60 V, 300 mA, 1.6 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 300mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.1V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.6ohm | auf Bestellung 140705 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
2N7002H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 153000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
2N7002H6327XTSA2 | Infineon | N-MOSFET 60V 0.3A 2N7002H6327XTSA2 Infineon T2N7002h Anzahl je Verpackung: 500 Stücke | auf Bestellung 6000 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 38725 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002H6327XTSA2 | Infineon Technologies | MOSFET N-Ch 60V 300mA SOT-23-3 | auf Bestellung 627375 Stücke: Lieferzeit 14-28 Tag (e) |
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2N7002H6327XTSA2 | Infineon Technologies | Description: MOSFET N-CH 60V 300MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V | auf Bestellung 105687 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 129000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002H6327XTSA2 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.5W Case: PG-SOT23 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Kind of channel: enhanced | auf Bestellung 15013 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 11079 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002H6327XTSA2 | Infineon | N-MOSFET 60V 0.3A 2N7002H6327XTSA2 Infineon T2N7002h Anzahl je Verpackung: 500 Stücke | auf Bestellung 9000 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 22147 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002H6327XTSA2 | INFINEON | Description: INFINEON - 2N7002H6327XTSA2 - Leistungs-MOSFET, n-Kanal, 60 V, 300 mA, 1.6 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 300mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.1V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.6ohm | auf Bestellung 140705 Stücke: Lieferzeit 14-21 Tag (e) |