Produkte > BCW
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||||
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BCW 60B E6327 | Infineon Technologies | Bipolar Transistors - BJT NPN Silicon AF Transistors | auf Bestellung 47995 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
BCW 60C E6327 | Infineon Technologies | Description: TRANS NPN 32V 0.1A SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW 60C E6327 | Infineon Technologies | Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR | auf Bestellung 33021 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW 60D E6327 | Infineon Technologies | Description: TRANS NPN 32V 0.1A SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW 60D E6327 | Infineon Technologies | Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR | auf Bestellung 48541 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW 60D E6327 | Infineon | NPN 100mA 32V 250mW 250MHz BCW60D TBCW60d Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW 60FF E6327 | Infineon Technologies | Description: TRANS NPN 32V 0.1A SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | auf Bestellung 45000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW 61A | Diodes Incorporated | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW 61A E6327 | Infineon | PNP 100mA 32V 330mW BCW61A TBCW61a Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW 61A E6327 | Infineon Technologies | Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR | auf Bestellung 10917 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW 61B E6327 | Infineon Technologies | Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR | auf Bestellung 45000 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
BCW 61B E6327 | Infineon | PNP 100mA 32V 250mW 100MHz BCW61BE6327HTSA1 BCW61B TBCW61b Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW 61C E6327 | Infineon Technologies | Description: TRANS PNP 32V 0.1A SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW 61C E6327 | Infineon Technologies | Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR | auf Bestellung 20596 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW 61D | Infineon Technologies | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW 61D E6327 | Infineon Technologies | Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR | auf Bestellung 42000 Stücke: Lieferzeit 379-393 Tag (e) |
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BCW 61D E6327 | Infineon Technologies | Description: TRANS PNP 32V 0.1A SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW 66F E6327 | Infineon Technologies | Description: TRANS NPN 45V 0.8A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 170MHz Supplier Device Package: PG-SOT23 Part Status: Obsolete Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW 66G E6327 | Infineon Technologies | Trans GP BJT NPN 45V 0.8A 330mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW 66G E6327 | Infineon Technologies | Description: TRANS NPN 45V 0.8A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 170MHz Supplier Device Package: PG-SOT23 Part Status: Obsolete Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW 66H B6327 | Infineon Technologies | Description: TRANS NPN 45V 0.8A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 170MHz Supplier Device Package: PG-SOT23 Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW 66H E6327 | Infineon Technologies | Description: TRANS NPN 45V 0.8A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 170MHz Supplier Device Package: PG-SOT23 Part Status: Obsolete Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW 66H E6327 | Infineon Technologies | Trans GP BJT NPN 45V 0.8A 330mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW 66KF E6327 | Infineon | NPN 800mA 45V 500mW 170MHz BCW66KF TBCW66kf Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW 66KF E6327 | Infineon Technologies | Bipolar Transistors - BJT NPN 45.0 V 100 mA | auf Bestellung 46378 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW 66KG E6327 | Infineon Technologies | Bipolar Transistors - BJT NPN 45.0 V 100 mA | auf Bestellung 15 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW 66KG E6433 | Infineon Technologies | Description: TRANS NPN 45V 0.8A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 170MHz Supplier Device Package: PG-SOT23 Part Status: Obsolete Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW 66KH E6327 | Infineon Technologies | Bipolar Transistors - BJT NPN 45.0 V 100 mA | auf Bestellung 168000 Stücke: Lieferzeit 435-449 Tag (e) |
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BCW 67A | onsemi / Fairchild | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW 67A E6327 | Infineon Technologies | Description: TRANS PNP 32V 0.8A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT23 Part Status: Obsolete Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW 67B E6327 | Infineon Technologies | Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW 67C E6327 | Infineon Technologies | Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR | auf Bestellung 27701 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW 68F E6327 | Infineon Technologies | Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR | auf Bestellung 32995 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW 68G | Infineon Technologies | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW 68G E6327 | Infineon Technologies | Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW 68H E6327 | Infineon Technologies | Bipolar Transistors - BJT PNP 45 V 800 mA | auf Bestellung 38798 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW-500X10- 3 GN Клема для друкованої плати | verfügbar 1000 Stücke: | |||||||||||||||||||||
BCW0001 | Balluff | Description: DIMENSION= 18 X 65 MM, SERIES=M1 Packaging: Bag Package / Case: Module Output Type: Analog Current Sensing Distance: 0" ~ 0.315" (0mm ~ 8mm) Shielding: Unshielded Operating Temperature: 10°C ~ 55°C Termination Style: Cable Voltage - Supply: 12V ~ 35V Material - Body: Stainless Steel Sensor Type: Capacitive Ingress Protection: IP67 Indicator: LED Part Status: Active | auf Bestellung 9 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW0004 | Balluff | Description: SENSOR LEVEL Packaging: Bag Voltage Rating: 4V ~ 8V Mounting Type: Cable Mount Operating Temperature: 0°C ~ 60°C Material - Housing & Prism: Polyethylene Terephthalate (PET) | auf Bestellung 22 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW29 | Nexperia | Nexperia | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW29 /T3 | onsemi / Fairchild | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW29 T/R | onsemi / Fairchild | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW29,215 | Nexperia | Bipolar Transistors - BJT BCW29/SOT23/TO-236AB | auf Bestellung 6040 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW29,215 | Nexperia USA Inc. | Description: TRANS PNP 32V 0.1A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW29,215 | NEXPERIA | Trans GP BJT PNP 32V 0.1A 250mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW29,215 | NEXPERIA | Description: NEXPERIA - BCW29,215 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 36700 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW29,215 | Nexperia | Trans GP BJT PNP 32V 0.1A 250mW 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW29,215 | Nexperia USA Inc. | Description: TRANS PNP 32V 0.1A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2975 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW29,215 | Nexperia | Trans GP BJT PNP 32V 0.1A 250mW 3-Pin SOT-23 T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW29,235 | Nexperia USA Inc. | Description: TRANS PNP 32V 0.1A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW29,235 | Nexperia | Bipolar Transistors - BJT BCW29/SOT23/TO-236AB | auf Bestellung 8745 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW29,235 | NEXPERIA | Trans GP BJT PNP 32V 0.1A 250mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW29,235 Produktcode: 175652 | IC > IC andere | Produkt ist nicht verfügbar | ||||||||||||||||||||
BCW29,235 | NEXPERIA | Description: NEXPERIA - BCW29,235 - Bipolarer Einzeltransistor (BJT), PNP, 32 V, 100 mA, 250 mW, TO-236AB (SOT-23) tariffCode: 85412100 Transistormontage: Oberflächenmontage hazardous: false Qualifikation: - Dauer-Kollektorstrom: 100 MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 250 Bauform - Transistor: TO-236AB (SOT-23) Anzahl der Pins: 3 Produktpalette: - Kollektor-Emitter-Spannung, max.: 32 Wandlerpolarität: PNP Übergangsfrequenz: 100 Betriebstemperatur, max.: 150 SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW29LT | Allegro | 07+ | auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW29TA | FERRANTI | SOT-23 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW30 | onsemi | Description: TRANS PNP 32V 0.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 2mA, 5V Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 350 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW30 | ON Semiconductor | Trans GP BJT PNP 32V 0.5A 3-Pin SOT-23 T/R | auf Bestellung 2335 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW30 | PHILIPS | 09+ | auf Bestellung 3018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW30 | ST | SOT23/ | auf Bestellung 2292 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW30 | onsemi / Fairchild | Bipolar Transistors - BJT SOT-23 PNP GP AMP | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW30 | ON Semiconductor | Trans GP BJT PNP 32V 0.5A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW30 Produktcode: 30973 | Transistoren > Bipolar-Transistoren PNP ZCODE: 8541 21 00 90 | Produkt ist nicht verfügbar | ||||||||||||||||||||
BCW30 | FAIRCHILD | 07+ SOT-23 | auf Bestellung 1980 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW30 | PHILIPS | SOT23 | auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW30 /T3 | onsemi / Fairchild | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW30 T/R | onsemi / Fairchild | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW30,215 | NEXPERIA | Trans GP BJT PNP 32V 0.1A 250mW Automotive 3-Pin SOT-23 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW30,215 | NEXPERIA | Description: NEXPERIA - BCW30,215 - Bipolarer Einzeltransistor (BJT), PNP, 32 V, 100 mA, 250 mW, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 150hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 32V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: -MHz Betriebstemperatur, max.: 150°C | auf Bestellung 7318 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW30,215 | Nexperia | Bipolar Transistors - BJT BCW30/SOT23/TO-236AB | auf Bestellung 15717 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW30,215 | Nexperia USA Inc. | Description: TRANS PNP 32V 0.1A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5251 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW30,215 | Nexperia | Trans GP BJT PNP 32V 0.1A 250mW 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW30,215 | Nexperia | Trans GP BJT PNP 32V 0.1A 250mW 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW30,215 | NEXPERIA | Description: NEXPERIA - BCW30,215 - Bipolarer Einzeltransistor (BJT), PNP, 32 V, 100 mA, 250 mW, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 150hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 32V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: -MHz Betriebstemperatur, max.: 150°C | auf Bestellung 7318 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW30,215 | Nexperia USA Inc. | Description: TRANS PNP 32V 0.1A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW30,215 | Nexperia | Trans GP BJT PNP 32V 0.1A 250mW 3-Pin SOT-23 T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW30,215 | NEXPERIA | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 32V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 215...500 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW30,215 | Nexperia | Trans GP BJT PNP 32V 0.1A 250mW 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW30,215 | NEXPERIA | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 32V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 215...500 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW30,235 | Nexperia USA Inc. | Description: TRANS PNP 32V 0.1A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 9961 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW30,235 | NEXPERIA | Trans GP BJT PNP 32V 0.1A 250mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW30,235 | NEXPERIA | Description: NEXPERIA - BCW30,235 - TRANSISTOR, BIPOLAR MSL: MSL 1 - unbegrenzt SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW30,235 | Nexperia | Bipolar Transistors - BJT BCW30/SOT23/TO-236AB | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW30,235 | Nexperia USA Inc. | Description: TRANS PNP 32V 0.1A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW30/C2P | PHILIPS | auf Bestellung 48000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW30235 | NXP USA Inc. | Description: NOW NEXPERIA BCW30 - SMALL SIGNA Packaging: Bulk Part Status: Active DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW30c2P | PHILIPS | 00+ sot-23 | auf Bestellung 69100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW30GC2 | ROHM | 96+ SOT-23 | auf Bestellung 27100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW30L | onsemi | onsemi SILICON TRANSISTOR PLAST | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW30LT | Allegro | 07+ | auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW30LT1 | ONSEMI | Description: ONSEMI - BCW30LT1 - TRANS PNP 32V 0.1A SOT-23 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 126000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW30LT1 | onsemi | Description: TRANS PNP GP 32V 100MA SOT-23 Packaging: Bulk Part Status: Obsolete | auf Bestellung 126000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW30LT1C2H | MOTOROLA | 98+ SOT-23 | auf Bestellung 9100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW30LT1G | ON Semiconductor | Trans GP BJT PNP 32V 0.1A 300mW 3-Pin SOT-23 T/R | auf Bestellung 25823 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW30LT1G | ON Semiconductor | Trans GP BJT PNP 32V 0.1A 300mW 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW30LT1G | ON-Semicoductor | PNP 100mA 32V 250mW 100MHz BCW30,215, BCW30LT1G BCW30 smd TBCW30 Anzahl je Verpackung: 100 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW30LT1G | onsemi | Description: TRANS PNP 32V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 2mA, 5V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 300 mW | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW30LT1G | ON Semiconductor | Trans GP BJT PNP 32V 0.1A 300mW 3-Pin SOT-23 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW30LT1G | ON Semiconductor | Trans GP BJT PNP 32V 0.1A 300mW 3-Pin SOT-23 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW30LT1G | ON Semiconductor | Trans GP BJT PNP 32V 0.1A 300mW 3-Pin SOT-23 T/R | auf Bestellung 25823 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW30LT1G | ONSEMI | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 32V; 0.1A; 0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.3W Case: SOT23 Current gain: 215...500 Mounting: SMD Kind of package: reel; tape | auf Bestellung 11175 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW30LT1G | ON Semiconductor | Trans GP BJT PNP 32V 0.1A 300mW 3-Pin SOT-23 T/R | auf Bestellung 547 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW30LT1G | ONSEMI | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 32V; 0.1A; 0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.3W Case: SOT23 Current gain: 215...500 Mounting: SMD Kind of package: reel; tape Anzahl je Verpackung: 25 Stücke | auf Bestellung 11175 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW30LT1G | ON Semiconductor | Trans GP BJT PNP 32V 0.1A 300mW 3-Pin SOT-23 T/R | auf Bestellung 23800 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW30LT1G | ON Semiconductor | Trans GP BJT PNP 32V 0.1A 300mW 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW30LT1G | onsemi | Description: TRANS PNP 32V 0.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 2mA, 5V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 300 mW | auf Bestellung 12377 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW30LT1G | ON Semiconductor | Trans GP BJT PNP 32V 0.1A 300mW 3-Pin SOT-23 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW30LT1G | ON Semiconductor | Trans GP BJT PNP 32V 0.1A 300mW 3-Pin SOT-23 T/R | auf Bestellung 547 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW30LT1G | ONSEMI | Description: ONSEMI - BCW30LT1G - Bipolarer Einzeltransistor (BJT), PNP, 32 V, 100 mA, 225 mW, SOT-23, Oberflächenmontage Transistormontage: Oberflächenmontage DC-Stromverstärkung (hFE), min.: 215 DC-Stromverstärkung hFE: 215 Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 100 MSL: MSL 1 - unbegrenzt Verlustleistung: 225 Bauform - Transistor: SOT-23 Anzahl der Pins: 3 Produktpalette: - Kollektor-Emitter-Spannung, max.: 32 Wandlerpolarität: PNP Übergangsfrequenz: - Betriebstemperatur, max.: 150 SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW30LT1G | onsemi | Bipolar Transistors - BJT 100mA 32V PNP | auf Bestellung 5251 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW30LT3 | onsemi | Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 2mA, 5V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 300 mW | auf Bestellung 90000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW30LT3 | ONSEMI | Description: ONSEMI - BCW30LT3 - BCW30LT3, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW30T116 | ROHM Semiconductor | Bipolar Transistors - BJT PNP 32V 100MA | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW30T116 | Rohm Semiconductor | Description: TRANS PNP 32V 0.1A SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Supplier Device Package: SST3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW30T146 | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BCW30TA | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BCW30_Q | onsemi / Fairchild | Bipolar Transistors - BJT SOT-23 PNP GP AMP | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW31 | PHILIPS | 09+ | auf Bestellung 258018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW31 | PHILIPS | 03+ SOT23 | auf Bestellung 42000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW31 | onsemi | Description: TRANS NPN 32V 0.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Frequency - Transition: 200MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 350 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW31 | onsemi / Fairchild | Bipolar Transistors - BJT NPN/ 32V/ 500mA | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW31 | ON Semiconductor | Trans GP BJT NPN 32V 0.5A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW31 | PHILIPS | auf Bestellung 167900 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW31 BK | Central Semiconductor Corp | Description: TRANS NPN 20V 0.1A SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Frequency - Transition: 2MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 350 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW31 TR | Central Semiconductor Corp | Description: TRANS NPN 20V 0.1A SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Frequency - Transition: 4MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 350 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW31,215 Produktcode: 194333 | Transistoren > Bipolar-Transistoren NPN | Produkt ist nicht verfügbar | ||||||||||||||||||||
BCW31,215 | NEXPERIA | Description: NEXPERIA - BCW31,215 - Bipolarer Einzeltransistor (BJT), NPN, 32 V, 100 mA, 250 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 190hFE hazardous: false rohsPhthalatesCompliant: YES Dauer-Kollektorstrom: 100mA usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Anzahl der Pins: 3Pins Kollektor-Emitter-Spannung, max.: 32V productTraceability: Yes-Date/Lot Code Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C | auf Bestellung 2335 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW31,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 32316 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW31,215 | NEXPERIA | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.1A; 250mW; SOT23,TO236AB Collector-emitter voltage: 32V Current gain: 110...220 Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.25W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD Case: SOT23; TO236AB Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW31,215 | Nexperia | Bipolar Transistors - BJT BCW31/SOT23/TO-236AB | auf Bestellung 16803 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW31,215 | Nexperia USA Inc. | Description: TRANS NPN 32V 0.1A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 210mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 90000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW31,215 | NEXPERIA | Trans GP BJT NPN 32V 0.1A 250mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW31,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 141000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW31,215 | NXP USA Inc. | Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 210mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Qualification: AEC-Q101 | auf Bestellung 42000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW31,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW31,215 | NXP Semiconductors | auf Bestellung 14236 Stücke: Lieferzeit 14-21 Tag (e) | ||||||||||||||||||||
BCW31,215 | NEXPERIA | Description: NEXPERIA - BCW31,215 - Bipolarer Einzeltransistor (BJT), NPN, 32 V, 100 mA, 250 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 190hFE hazardous: false rohsPhthalatesCompliant: YES Dauer-Kollektorstrom: 100mA usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Anzahl der Pins: 3Pins Kollektor-Emitter-Spannung, max.: 32V productTraceability: Yes-Date/Lot Code Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C | auf Bestellung 2335 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW31,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 141000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW31,215 | Nexperia USA Inc. | Description: TRANS NPN 32V 0.1A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 210mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 92169 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW31,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 32316 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW31,215 | NEXPERIA | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.1A; 250mW; SOT23,TO236AB Collector-emitter voltage: 32V Current gain: 110...220 Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.25W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD Case: SOT23; TO236AB | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW31GD1 | ROHM | 96+ 23 | auf Bestellung 27100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW31LT | Allegro | 07+ | auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW31LT1 | auf Bestellung 5614 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BCW31R | PHILIPS | 04+ SOT-23 | auf Bestellung 3100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW31T116 | Rohm Semiconductor | Description: TRANS NPN 32V 0.1A SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW31TAD1 | ZETEX | 99+ 23 | auf Bestellung 15100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW31_Q | onsemi / Fairchild | Bipolar Transistors - BJT NPN/ 32V/ 500mA | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW32 | onsemi / Fairchild | Bipolar Transistors - BJT SOT-23 NPN GP AMP | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW32 | onsemi | Description: TRANS NPN 32V 0.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 200MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 350 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW32 | ON Semiconductor | Trans GP BJT NPN 32V 0.5A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW32,215 | Nexperia | Bipolar Transistors - BJT BCW32/SOT23/TO-236AB | auf Bestellung 28767 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW32,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 23900 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW32,215 | Nexperia USA Inc. | Description: TRANS NPN 32V 0.1A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 210mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW32,215 | NEXPERIA | Description: NEXPERIA - BCW32,215 - Bipolarer Einzeltransistor (BJT), NPN, 32 V, 100 mA, 250 mW, SOT-23, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false Übergangsfrequenz: -MHz rohsPhthalatesCompliant: YES usEccn: EAR99 | auf Bestellung 17447 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW32,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW32,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 23900 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW32,215 | NEXPERIA | Trans GP BJT NPN 32V 0.1A 250mW Automotive 3-Pin SOT-23 T/R | auf Bestellung 96000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW32,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 117000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW32,215 | NEXPERIA | BCW32.215 NPN SMD transistors | auf Bestellung 3085 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW32,215 | Nexperia USA Inc. | Description: TRANS NPN 32V 0.1A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 210mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1581 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW32,215 | NEXPERIA | Description: NEXPERIA - BCW32,215 - Bipolarer Einzeltransistor (BJT), NPN, 32 V, 100 mA, 250 mW, SOT-23, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false Übergangsfrequenz: -MHz rohsPhthalatesCompliant: YES usEccn: EAR99 | auf Bestellung 17447 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW32,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 117000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW32,235 | Nexperia USA Inc. | Description: TRANS NPN 32V 0.1A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 210mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW32,235 | NEXPERIA | Trans GP BJT NPN 32V 0.1A 250mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW32,235 | Nexperia USA Inc. | Description: TRANS NPN 32V 0.1A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 210mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW32,235 | Nexperia | Bipolar Transistors - BJT BCW32/SOT23/TO-236AB | auf Bestellung 5507 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW32235 | Nexperia USA Inc. | Description: NOW NEXPERIA BCW32 - SMALL SIGNA Packaging: Bulk | auf Bestellung 130000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW32D2 | FAIRCHILD | 00+ SOT-23 | auf Bestellung 27100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW32GD2 | ROHM | 96+ SOT-23 | auf Bestellung 24100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW32LT | Allegro | 07+ | auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW32LT1 | ON Semiconductor | auf Bestellung 5773 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW32LT1 | onsemi | Description: TRANS NPN GP 32V 100MA SOT-23 Packaging: Bulk | auf Bestellung 423000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW32LT1 | ONSEMI | Description: ONSEMI - BCW32LT1 - BCW32LT1, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (17-Jan-2023) | auf Bestellung 423000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW32LT1 | ON Semiconductor | Trans GP BJT NPN 32V 0.1A 300mW 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW32LT1G | ON Semiconductor | Trans GP BJT NPN 32V 0.1A 300mW 3-Pin SOT-23 T/R | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW32LT1G | ONSEMI | Description: ONSEMI - BCW32LT1G - Bipolarer Einzeltransistor (BJT), NPN, 32 V, 100 mA, 225 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 200hFE hazardous: false rohsPhthalatesCompliant: YES Dauer-Kollektorstrom: 100mA usEccn: EAR99 euEccn: NLR Verlustleistung: 225mW Anzahl der Pins: 3Pins Kollektor-Emitter-Spannung, max.: 32V productTraceability: Yes-Date/Lot Code Übergangsfrequenz: -MHz Betriebstemperatur, max.: 150°C | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW32LT1G | ON Semiconductor | Trans GP BJT NPN 32V 0.1A 300mW 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW32LT1G | ONSEMI | Description: ONSEMI - BCW32LT1G - Bipolarer Einzeltransistor (BJT), NPN, 32 V, 100 mA, 225 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 200hFE hazardous: false rohsPhthalatesCompliant: YES Dauer-Kollektorstrom: 100mA usEccn: EAR99 euEccn: NLR Verlustleistung: 225mW Anzahl der Pins: 3Pins Kollektor-Emitter-Spannung, max.: 32V productTraceability: No Übergangsfrequenz: -MHz Betriebstemperatur, max.: 150°C | auf Bestellung 7545 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW32LT1G | onsemi | Bipolar Transistors - BJT 100mA 32V NPN | auf Bestellung 10617 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW32LT1G | ON Semiconductor | Trans GP BJT NPN 32V 0.1A 300mW 3-Pin SOT-23 T/R | auf Bestellung 8859 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW32LT1G | ON Semiconductor | Trans GP BJT NPN 32V 0.1A 300mW 3-Pin SOT-23 T/R | auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW32LT1G | ON Semiconductor | Trans GP BJT NPN 32V 0.1A 300mW 3-Pin SOT-23 T/R | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW32LT1G | onsemi | Description: TRANS NPN 32V 0.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 225 mW | auf Bestellung 37065 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW32LT1G | ON Semiconductor | Trans GP BJT NPN 32V 0.1A 300mW 3-Pin SOT-23 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW32LT1G | ON Semiconductor | Trans GP BJT NPN 32V 0.1A 300mW 3-Pin SOT-23 T/R | auf Bestellung 8859 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW32LT1G | ON Semiconductor | Trans GP BJT NPN 32V 0.1A 300mW 3-Pin SOT-23 T/R | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW32LT1G | ONSEMI | Description: ONSEMI - BCW32LT1G - Bipolarer Einzeltransistor (BJT), NPN, 32 V, 100 mA, 225 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 200hFE hazardous: false rohsPhthalatesCompliant: YES Dauer-Kollektorstrom: 100mA usEccn: EAR99 euEccn: NLR Verlustleistung: 225mW Anzahl der Pins: 3Pins Kollektor-Emitter-Spannung, max.: 32V productTraceability: No Übergangsfrequenz: -MHz Betriebstemperatur, max.: 150°C | auf Bestellung 7545 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW32LT1G | ON Semiconductor | Trans GP BJT NPN 32V 0.1A 300mW 3-Pin SOT-23 T/R | auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW32LT1G | ONSEMI | BCW32LT1G NPN SMD transistors | auf Bestellung 2750 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW32LT1G | onsemi | Description: TRANS NPN 32V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 225 mW | auf Bestellung 27000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW32LT1G | ON Semiconductor | Trans GP BJT NPN 32V 0.1A 300mW 3-Pin SOT-23 T/R | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW32LT1G | ON Semiconductor | Trans GP BJT NPN 32V 0.1A 300mW 3-Pin SOT-23 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW32R | T | auf Bestellung 2980 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW32T116 | Rohm Semiconductor | Description: TRANS NPN 32V 0.1A SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Supplier Device Package: SST3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW32T116 | ROHM Semiconductor | Bipolar Transistors - BJT NPN 32V 100MA | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW32T146 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BCW32TAD2 | ZETEX | 00+ SOT-23 | auf Bestellung 18100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW32_Q | onsemi / Fairchild | Bipolar Transistors - BJT SOT-23 NPN GP AMP | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW33 | onsemi / Fairchild | Bipolar Transistors - BJT SOT-23 NPN GP AMP | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW33 | ONS | Транз. Бипол. ММ NPN SOT23 Uceo=32V; Ic=0,1A; f=100MHz; Pdmax=0,25W; hfe=420/800(аналог BCW33) | auf Bestellung 286 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW33 | Fairchild Semiconductor | Description: TRANS NPN 32V 0.5A SOT23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 200MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 350 mW | auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW33 | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 100mA; SOT23 Case: SOT23 Mounting: SMD Polarisation: bipolar Type of transistor: NPN Frequency: 300MHz Collector current: 0.1A Collector-emitter voltage: 30V | Produkt ist nicht verfügbar | ||||||||||||||||||||
BCW33 | onsemi | Description: TRANS NPN 32V 0.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 200MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 350 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW33 | ONS | Транз. Бипол. ММ NPN SOT23 Uceo=32V; Ic=0,1A; f=100MHz; Pdmax=0,25W; hfe=420/800(аналог BCW33) | auf Bestellung 11194 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW33 | ONSEMI | Description: ONSEMI - BCW33 - TRANSISTOR SMD SOT 223 BIPOLAR tariffCode: 85412900 productTraceability: No rohsCompliant: TBA euEccn: Unknown hazardous: false rohsPhthalatesCompliant: TBA usEccn: Unknown | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW33 | ON Semiconductor | Trans GP BJT NPN 32V 0.5A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW33 T116 | ROHM | SOT23 | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW33 (Bipolartransistor NPN) Produktcode: 15222 | NXP | Transistoren > Bipolar-Transistoren NPN Gehäuse: SOT-23 fT: 100 MHz Uceo,V: 32 Ic,A: 0,1 h21: 800 ZCODE: SMD | verfügbar 2401 Stück: 250 Stück - stock Köln2151 Stück - lieferbar in 3-4 Wochen |
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BCW33 T/R | NXP Semiconductors | Bipolar Transistors - BJT TRANS GP TAPE-7 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW33,215 | NXP Semiconductors | Description: NEXPERIA BCW33 - SMALL SIGNAL BI Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 210mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Qualification: AEC-Q101 | auf Bestellung 83341 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW33,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW33,215 | NEXPERIA | Description: NEXPERIA - BCW33,215 - Bipolarer Einzeltransistor (BJT), NPN, 32 V, 100 mA, 250 mW, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 600hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter Kollektor-Emitter-Spannung, max.: 32V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: -MHz Betriebstemperatur, max.: 150°C | auf Bestellung 555 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW33,215 | NEXPERIA | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.1A; 250mW; SOT23,TO236AB Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Power dissipation: 0.25W Polarisation: bipolar Type of transistor: NPN Frequency: 100MHz Collector current: 0.1A Collector-emitter voltage: 32V | auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW33,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW33,215 | Nexperia | Bipolar Transistors - BJT BCW33/SOT23/TO-236AB | auf Bestellung 30392 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW33,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW33,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW33,215 | Nexperia USA Inc. | Description: TRANS NPN 32V 0.1A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 210mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Qualification: AEC-Q101 | auf Bestellung 5250 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW33,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 1079 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW33,215 | NEXPERIA | Description: NEXPERIA - BCW33,215 - Bipolarer Einzeltransistor (BJT), NPN, 32 V, 100 mA, 250 mW, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 600hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter Kollektor-Emitter-Spannung, max.: 32V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: -MHz Betriebstemperatur, max.: 150°C | auf Bestellung 555 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW33,215 | NXP/Nexperia/We-En | Транзистор NPN; Uceo, В = 32; Ic = 100 мА; ft, МГц = 100; hFE = 420 @ 2 мA, 5 В; Uceo(sat), В @ Ic, Ib = 0.21 @ 2.5 мA, 50 мA; Р, Вт = 0,25 Вт; Тексп, °C = -65...+150; Тип монт. = smd; SOT-23-3 | auf Bestellung 1800 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW33,215 | NEXPERIA | Trans GP BJT NPN 32V 0.1A 250mW Automotive 3-Pin SOT-23 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW33,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW33,215 | NEXPERIA | Description: NEXPERIA - BCW33,215 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 56500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW33,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW33,215 | Nexperia USA Inc. | Description: TRANS NPN 32V 0.1A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 210mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW33,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 1079 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW33,215 | NEXPERIA | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.1A; 250mW; SOT23,TO236AB Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Power dissipation: 0.25W Polarisation: bipolar Type of transistor: NPN Frequency: 100MHz Collector current: 0.1A Collector-emitter voltage: 32V Anzahl je Verpackung: 5 Stücke | auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW33L | onsemi | onsemi SILICON TRANSISTOR PLAST | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW33LT | Allegro | 07+ | auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW33LT1 | onsemi | Description: TRANS NPN 32V 0.1A SOT23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 300 mW | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW33LT1 | onsemi | Description: TRANS NPN 32V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 300 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW33LT1 | MOTOROLA | auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW33LT1G | ON Semiconductor | Trans GP BJT NPN 32V 0.1A 300mW 3-Pin SOT-23 T/R | auf Bestellung 11549 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW33LT1G | ON Semiconductor | Trans GP BJT NPN 32V 0.1A 300mW 3-Pin SOT-23 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW33LT1G | ON Semiconductor | Trans GP BJT NPN 32V 0.1A 300mW 3-Pin SOT-23 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW33LT1G | ON Semiconductor | Trans GP BJT NPN 32V 0.1A 300mW 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW33LT1G | ONSEMI | Description: ONSEMI - BCW33LT1G - TRANSISTOR, BIPOL, NPN, 32, SOT-23-3 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 174408 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW33LT1G | ON SEMICONDUCTOR | NPN 32V 0.2A 0.25W SOT-23 | auf Bestellung 488 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW33LT1G | ON Semiconductor | Trans GP BJT NPN 32V 0.1A 300mW 3-Pin SOT-23 T/R | auf Bestellung 11549 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW33LT1G | onsemi | Description: TRANS NPN 32V 0.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 300 mW | auf Bestellung 151339 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW33LT1G | onsemi | Bipolar Transistors - BJT 100mA 32V NPN | auf Bestellung 5448 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW33LT1G | ON Semiconductor | Trans GP BJT NPN 32V 0.1A 300mW 3-Pin SOT-23 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW33LT1G | ON Semiconductor | Trans GP BJT NPN 32V 0.1A 300mW 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW33LT1G | ON Semiconductor | Trans GP BJT NPN 32V 0.1A 300mW 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW33LT1G | onsemi | Description: TRANS NPN 32V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 300 mW | auf Bestellung 147000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW33LT1G | ON Semiconductor | Trans GP BJT NPN 32V 0.1A 300mW 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW33LT3G | onsemi | Description: TRANS NPN 32V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 300 mW | auf Bestellung 110000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW33LT3G | onsemi | Bipolar Transistors - BJT 100mA 32V NPN | auf Bestellung 2528 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW33LT3G Produktcode: 183750 | Transistoren > Bipolar-Transistoren NPN | Produkt ist nicht verfügbar | ||||||||||||||||||||
BCW33LT3G | ON Semiconductor | Trans GP BJT NPN 32V 0.1A 300mW 3-Pin SOT-23 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW33LT3G | onsemi | Description: TRANS NPN 32V 0.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 300 mW | auf Bestellung 136709 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW33LT3G | ON Semiconductor | Trans GP BJT NPN 32V 0.1A 300mW 3-Pin SOT-23 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW33LT3G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.3W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Current gain: 420...800 Power dissipation: 0.3W Polarisation: bipolar Type of transistor: NPN Collector current: 0.1A Collector-emitter voltage: 32V | auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW33LT3G | ON Semiconductor | Trans GP BJT NPN 32V 0.1A 300mW 3-Pin SOT-23 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW33LT3G | ONSEMI | Description: ONSEMI - BCW33LT3G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 818579 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW33LT3G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.3W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Current gain: 420...800 Power dissipation: 0.3W Polarisation: bipolar Type of transistor: NPN Collector current: 0.1A Collector-emitter voltage: 32V Anzahl je Verpackung: 25 Stücke | auf Bestellung 150 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW33T116 | Rohm Semiconductor | Description: TRANS NPN 32V 0.1A SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60 | SM | auf Bestellung 207000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW60C.215 (Bipolartransistor NPN) Produktcode: 34842 | Philips | Transistoren > Bipolar-Transistoren NPN Gehäuse: SOT-23 fT: 250 MHz Uceo,V: 32 V Ucbo,V: 32 V Ic,A: 0,1 A | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60A | ON Semiconductor | Trans GP BJT NPN 32V 0.1A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60A | onsemi / Fairchild | Bipolar Transistors - BJT NPN/ 32V/ 100mA | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60A | onsemi | Description: TRANS NPN 32V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 350 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60A E6327 | INFINEON | SOT23-AA | auf Bestellung 7306 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW60A E6327 SOT23-AA | INFINEON | auf Bestellung 7306 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW60ALT | Allegro | 07+ | auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW60A_D87Z | ON Semiconductor / Fairchild | Bipolar Transistors - BJT NPN Si Transistor Epitaxial | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60A_D87Z | onsemi | Description: TRANS NPN 32V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 350 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60A_Q | onsemi / Fairchild | Bipolar Transistors - BJT NPN/ 32V/ 100mA | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60B | onsemi / Fairchild | Bipolar Transistors - BJT NPN/ 32V/ 100mA | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60B | PHILIPS | SOT23 | auf Bestellung 72000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW60B | ON Semiconductor | Trans GP BJT NPN 32V 0.1A 350mW 3-Pin SOT-23 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60B | onsemi | Description: TRANS NPN 32V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 350 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60B,215 | Nexperia | Bipolar Transistors - BJT BCW60B/SOT23/TO-236AB | auf Bestellung 4344 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW60B,215 | NEXPERIA | Description: NEXPERIA - BCW60B,215 - Bipolarer Einzeltransistor (BJT), NPN, 32 V, 100 mA, 250 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 180hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pins Produktpalette: - Kollektor-Emitter-Spannung, max.: 32V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Betriebstemperatur, max.: 150°C | auf Bestellung 464 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW60B,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 24625 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60B,215 | Nexperia USA Inc. | Description: TRANS NPN 32V 0.1A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1185 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW60B,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60B,215 | NEXPERIA | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 0.2A Current gain: 20...310 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz | auf Bestellung 5940 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60B,215 | NEXPERIA | Description: NEXPERIA - BCW60B,215 - Bipolarer Einzeltransistor (BJT), NPN, 32 V, 100 mA, 250 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 180hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pins Produktpalette: - Kollektor-Emitter-Spannung, max.: 32V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Betriebstemperatur, max.: 150°C | auf Bestellung 464 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW60B,215 | NEXPERIA | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 0.2A Current gain: 20...310 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Anzahl je Verpackung: 20 Stücke | auf Bestellung 5940 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW60B,215 | NEXPERIA | Trans GP BJT NPN 32V 0.1A 250mW Automotive 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW60B,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60B,215 | Nexperia USA Inc. | Description: TRANS NPN 32V 0.1A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60B,215 | NEXPERIA | Description: NEXPERIA - BCW60B,215 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 123000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW60B,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60B,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60B,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 24625 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60B,235 | NEXPERIA | Trans GP BJT NPN 32V 0.1A 250mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60B,235 | NEXPERIA | Description: NEXPERIA - BCW60B,235 - TRANSISTOR, BIPOLAR MSL: MSL 1 - unbegrenzt SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60B,235 | Nexperia | Bipolar Transistors - BJT BCW60B/SOT23/TO-236AB | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60B,235 | Nexperia USA Inc. | Description: TRANS NPN 32V 0.1A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60B/ABP | PHILIPS | auf Bestellung 27000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW60BE6327 | Infineon Technologies | Description: TRANS NPN 32V 0.1A SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60BE6327 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz Anzahl je Verpackung: 1 Stücke | auf Bestellung 3094 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW60BE6327 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz | auf Bestellung 3094 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60BE6327HTSA1 | Infineon | NPN 100mA 32V 250mW 250MHz BCW60B TBCW60b Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW60BE6327HTSA1 | Infineon Technologies | Trans GP BJT NPN 32V 0.1A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 144000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60BE6327HTSA1 | Infineon Technologies | Trans GP BJT NPN 32V 0.1A 330mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60BE6327HTSA1 | Infineon Technologies | Description: TRANS NPN 32V 0.1A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60BLT | Allegro | 07+ | auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW60BLT1 | MOTOROLA | auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW60B_Q | onsemi / Fairchild | Bipolar Transistors - BJT NPN/ 32V/ 100mA | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60C Produktcode: 175305 | NXP | Transistoren > Bipolar-Transistoren NPN Gehäuse: SOT-23 fT: 250 MHz Uceo,V: 32 V Ucbo,V: 32 V Ic,A: 0,1 A h21: 40 ZCODE: SMD | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60C | Infineon | Транз. Бипол. ММ NPN SOT23 Uceo=32V; Ic=0,1A; f=100MHz; Pdmax=0,25W; hfe=250/460 | auf Bestellung 353 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60C | ON Semiconductor | Trans GP BJT NPN 32V 0.1A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60C Produktcode: 192447 | Infineon | Transistoren > Bipolar-Transistoren NPN Gehäuse: SOT-23 fT: 250 MHz Uceo,V: 32 V Ucbo,V: 32 V Ic,A: 0,1 A ZCODE: SMD | auf Bestellung 1377 Stück: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW60C | onsemi | Description: TRANS NPN 32V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 350 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60C | Nexperia | Транз. Бипол. ММ NPN SOT23 Uceo=32V; Ic=0,1A; f=100MHz; Pdmax=0,25W; hfe=250/460 | auf Bestellung 99 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60C | onsemi / Fairchild | Bipolar Transistors - BJT NPN/ 32V/ 100mA | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60C /T3 | onsemi | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60C,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60C,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60C,215 | Nexperia USA Inc. | Description: TRANS NPN 32V 0.1A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60C,215 | NEXPERIA | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 0.2A Current gain: 40...460 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Anzahl je Verpackung: 5 Stücke | auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW60C,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60C,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60C,215 | NEXPERIA | Description: NEXPERIA - BCW60C,215 - Bipolarer Einzeltransistor (BJT), NPN, 32 V, 100 mA, 250 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 460hFE hazardous: false rohsPhthalatesCompliant: YES Dauer-Kollektorstrom: 100mA usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Anzahl der Pins: 3Pins Kollektor-Emitter-Spannung, max.: 32V productTraceability: Yes-Date/Lot Code Übergangsfrequenz: 250MHz Betriebstemperatur, max.: 150°C | auf Bestellung 6643 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW60C,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60C,215 | NEXPERIA | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 0.2A Current gain: 40...460 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz | auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60C,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60C,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 25995 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60C,215 | Nexperia USA Inc. | Description: TRANS NPN 32V 0.1A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Qualification: AEC-Q101 | auf Bestellung 340 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW60C,215 | NEXPERIA | Description: NEXPERIA - BCW60C,215 - Bipolarer Einzeltransistor (BJT), NPN, 32 V, 100 mA, 250 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 460hFE hazardous: false rohsPhthalatesCompliant: YES Dauer-Kollektorstrom: 100mA usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Anzahl der Pins: 3Pins Kollektor-Emitter-Spannung, max.: 32V productTraceability: Yes-Date/Lot Code Übergangsfrequenz: 250MHz Betriebstemperatur, max.: 150°C | auf Bestellung 6643 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW60C,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 25995 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60C,215 | NEXPERIA | Trans GP BJT NPN 32V 0.1A 250mW Automotive 3-Pin SOT-23 T/R | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW60C,215 | Nexperia | Bipolar Transistors - BJT BCW60C/SOT23/TO-236AB | auf Bestellung 8137 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW60C,235 | Nexperia USA Inc. | Description: TRANS NPN 32V 0.1A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60C,235 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60C,235 | NEXPERIA | Trans GP BJT NPN 32V 0.1A 250mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60C,235 | Nexperia | Bipolar Transistors - BJT BCW60C/SOT23/TO-236AB | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60C,235 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 157 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW60C-E6327 | INFINEON | 00+/01 | auf Bestellung 456000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW60C/2X | PHILIPS | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW60C/Acp | PHI | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW60C215 | NXP USA Inc. | Description: NOW NEXPERIA SMALL SIGNAL BIPOLA Packaging: Bulk Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60C235 | NXP USA Inc. | Description: NOW NEXPERIA SMALL SIGNAL BIPOLA Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: SOT23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60CAcp | PHILIPS | 95+ SOT-23 | auf Bestellung 33100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW60CE-6327Acs | SIEMENS | 99+ SOT-23 | auf Bestellung 12100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW60CE6327 | Infineon Technologies | Description: TRANS NPN 32V 0.1A SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | auf Bestellung 100918 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW60CE6327 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz | auf Bestellung 622 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60CE6327 | Infineon | NPN 100mA 32V 330mW 250MHz BCW60C smd TBCW60c Anzahl je Verpackung: 100 Stücke | auf Bestellung 2000 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW60CE6327 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz Anzahl je Verpackung: 1 Stücke | auf Bestellung 622 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW60CE6327HTSA1 | Infineon Technologies | Trans GP BJT NPN 32V 0.1A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60CE6327HTSA1 | Infineon Technologies | Trans GP BJT NPN 32V 0.1A 330mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60CE6327HTSA1 | Infineon Technologies | Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60CE6327HTSA1 | Infineon Technologies | Description: TRANS NPN 32V 0.1A SOT-23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60CE6327HTSA1 | Infineon Technologies | Description: TRANS NPN 32V 0.1A SOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60CE6327SOT23-ACPB-FREE | INFINEON | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW60CLT | Allegro | 07+ | auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW60CT116 | Rohm Semiconductor | Description: TRANS NPN 32V 0.2A SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 260 @ 2mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 32 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60CWT106 | auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BCW60C_Q | onsemi / Fairchild | Bipolar Transistors - BJT NPN/ 32V/ 100mA | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60D | PHI | auf Bestellung 2975 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW60D | onsemi / Fairchild | Bipolar Transistors - BJT NPN/ 32V/ 100mA | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60D | onsemi | Description: TRANS NPN 32V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 350 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60D | ON Semiconductor | Trans GP BJT NPN 32V 0.1A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60D | FSC | 07+; | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW60D,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60D,215 | Nexperia USA Inc. | Description: TRANS NPN 32V 0.1A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Qualification: AEC-Q101 | auf Bestellung 39000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW60D,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60D,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60D,215 | NEXPERIA | Trans GP BJT NPN 32V 0.1A 250mW Automotive 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW60D,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60D,215 | NEXPERIA | Description: NEXPERIA - BCW60D,215 - Bipolarer Einzeltransistor (BJT), Universal, NPN, 32 V, 100 mA, 250 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 380hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 32V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 250MHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) | auf Bestellung 1599 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW60D,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60D,215 Produktcode: 162624 | Transistoren > Bipolar-Transistoren NPN | Produkt ist nicht verfügbar | ||||||||||||||||||||
BCW60D,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 12483 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60D,215 | Nexperia USA Inc. | Description: TRANS NPN 32V 0.1A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 41897 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW60D,215 | NEXPERIA | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 0.2A Current gain: 100...630 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz | auf Bestellung 2010 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60D,215 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 12483 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60D,215 | NEXPERIA | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 0.2A Current gain: 100...630 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Anzahl je Verpackung: 5 Stücke | auf Bestellung 2010 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW60D,215 | Nexperia | Bipolar Transistors - BJT BCW60D/SOT23/TO-236AB | auf Bestellung 23327 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW60D,215 | NEXPERIA | Description: NEXPERIA - BCW60D,215 - Bipolarer Einzeltransistor (BJT), Universal, NPN, 32 V, 100 mA, 250 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 380hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 32V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 250MHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) | auf Bestellung 1599 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW60D,235 | NEXPERIA | Description: NEXPERIA - BCW60D,235 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW60D,235 | Nexperia USA Inc. | Description: TRANS NPN 32V 0.1A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60D,235 | Nexperia | Bipolar Transistors - BJT BCW60D/SOT23/TO-236AB | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60D,235 | Nexperia | Trans GP BJT NPN 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60D,235 | Nexperia USA Inc. | Description: TRANS NPN 32V 0.1A TO236AB Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: TO-236AB Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Qualification: AEC-Q101 | auf Bestellung 40000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW60D,235 | NEXPERIA | Trans GP BJT NPN 32V 0.1A 250mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60DE6327 | Infineon Technologies | Description: TRANS NPN 32V 0.1A SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | auf Bestellung 13852 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW60DE6327HTSA1 | Infineon Technologies | Description: TRANS NPN 32V 0.1A SOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60DE6327HTSA1 | Infineon Technologies | Trans GP BJT NPN 32V 0.1A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60DE6327HTSA1 | Infineon Technologies | Trans GP BJT NPN 32V 0.1A 330mW Automotive 3-Pin SOT-23 T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW60DE6327HTSA1 | Infineon Technologies | Trans GP BJT NPN 32V 0.1A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60DE6327HTSA1 | Infineon Technologies | Description: TRANS NPN 32V 0.1A SOT-23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60DE6327HTSA1 | Infineon Technologies | Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60DE6327HTSA1 | Infineon Technologies | Trans GP BJT NPN 32V 0.1A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 96000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60DLT | Allegro | 07+ | auf Bestellung 100000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW60DRTA | onsemi | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60DRTA | Diodes Incorporated | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60DRTC | Diodes Incorporated | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60DRTC | onsemi | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60DT116 | Rohm Semiconductor | Description: TRANS NPN 32V 0.2A SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 32 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60DTA | ZETEX | 09+ SOT-23 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW60D_Q | onsemi / Fairchild | Bipolar Transistors - BJT NPN/ 32V/ 100mA | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60E6422HTMA1 | Infineon Technologies | Trans GP BJT NPN 32V 0.1A 330mW Automotive 3-Pin SOT-23 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60E6422HTMA1 | Infineon Technologies | Trans GP BJT NPN 32V 0.1A 330mW Automotive AEC-Q101 3-Pin SOT-23 | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60E6422HTMA1 | Infineon Technologies | Trans GP BJT NPN 32V 0.1A 330mW Automotive AEC-Q101 3-Pin SOT-23 | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60E6422HTMA1 | Infineon Technologies | Trans GP BJT NPN 32V 0.1A 330mW Automotive AEC-Q101 3-Pin SOT-23 | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW60E6422HTMA1 | Infineon Technologies | Description: BCW60 - BIPOLAR BJT TRANSISTOR Packaging: Bulk Part Status: Active Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.05V @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) Frequency - Transition: 250MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | auf Bestellung 360000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW60E6422HTMA1 | Infineon Technologies | Trans GP BJT NPN 32V 0.1A 330mW Automotive AEC-Q101 3-Pin SOT-23 | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW60FE6327 | Infineon Technologies | Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60FF | INFINEON | 09+ | auf Bestellung 15018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW60FF | infineon | 04+ SOT-23 | auf Bestellung 3100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW60FFE6327 | Infineon Technologies | Description: BCW60 - LOW NOISE TRANSISTOR Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60FFE6327HTSA1 | Infineon Technologies | Description: TRANS NPN 32V 0.1A SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | auf Bestellung 312000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW60FFE6327HTSA1 | Infineon Technologies | Trans GP BJT NPN 32V 0.1A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60FFE6327HTSA1 | Infineon Technologies | Description: TRANS NPN 32V 0.1A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60FFE6327HTSA1 | Infineon Technologies | Trans GP BJT NPN 32V 0.1A 330mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60FN | Infineon Technologies | Description: TRANS NPN 32V 0.1A SOT23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60FNE-6393Ks | SIEMENS | 97+ SOT-23 | auf Bestellung 6100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW60FNE6393HTSA1 | Infineon Technologies | Description: TRANS NPN 32V 0.1A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW60R | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BCW60RC | NEC# | 05+ SOT-23 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW61 | PH | 05+ SOT-23 | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW61-B-MTFBB | SAMSUNG | SOT-23 | auf Bestellung 12100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW618 | PHILIPS | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW61A Produktcode: 81891 | NXP | Transistoren > Bipolar-Transistoren PNP Gehäuse: SOT-23 U, V: 32 U, V: 32 I, А: 0.1 h21,max: 120 | auf Bestellung 7 Stück: Lieferzeit 21-28 Tag (e) |
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BCW61A | onsemi / Fairchild | Bipolar Transistors - BJT SOT-23 PNP GP AMP | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61A | PHILIPS | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW61A | Infineon Technologies | Description: TRANS PNP 32V 0.1A SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61A E6327 | INFINEON | SOT23-BA PB-FREE | auf Bestellung 66000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW61A E6327 SOT23-BA PB | INFINEON | auf Bestellung 48000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW61AE6327 | Infineon Technologies | Description: TRANS PNP 32V 0.1A SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61AE6327HTSA1 | Infineon Technologies | Trans GP BJT PNP 32V 0.1A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW61AE6327HTSA1 | Infineon Technologies | Description: TRANS PNP 32V 0.1A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61AE6327HTSA1 | Infineon Technologies | Trans GP BJT PNP 32V 0.1A 330mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61AE6327HTSA1 | Infineon Technologies | Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61AE6327SOT23-BAPB-FREE | INFINEON | auf Bestellung 66000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW61ALT | Allegro | 07+ | auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW61AMTF | onsemi | Description: TRANS PNP 32V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 350 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61AMTF | ON Semiconductor | Trans GP BJT PNP 32V 0.1A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61B | PHILIPS | 07+ SOT-23 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW61B | Philips | Транз. Бипол. ММ PNP SOT23 Uceo=-32V; Ic=-0,1A; f=100MHz; Pdmax=0,25W; hfe=180/310 | auf Bestellung 6239 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW61B | onsemi / Fairchild | Bipolar Transistors - BJT PNP/32V/100MA | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61B | INFINEON | 09+ | auf Bestellung 186018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW61B | PHILIPS | SOT23-BB | auf Bestellung 45000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW61B SOT23-BB | PHILIPS | auf Bestellung 45000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW61B E6327 | Infineon | SOT23 | auf Bestellung 111000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW61B,215 | Nexperia | Bipolar Transistors - BJT BCW61B/SOT23/TO-236AB | auf Bestellung 5405 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW61B,215 | NXP Semiconductors | TRANS PNP 32V 0.1A SOT23 | auf Bestellung 1995 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW61B,215 | Nexperia | Trans GP BJT PNP 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 17796 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW61B,215 | NEXPERIA | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 32V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 30...310 Mounting: SMD Kind of package: reel; tape | auf Bestellung 2860 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW61B,215 | NEXPERIA | Description: NEXPERIA - BCW61B,215 - Bipolarer Einzeltransistor (BJT), PNP, 32 V, 100 mA, 250 mW, SOT-23, Oberflächenmontage tariffCode: 85412900 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 80hFE hazardous: false rohsPhthalatesCompliant: YES Dauer-Kollektorstrom: 100mA usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Anzahl der Pins: 3Pins Kollektor-Emitter-Spannung, max.: 32V productTraceability: Yes-Date/Lot Code Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C | auf Bestellung 9368 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW61B,215 | Nexperia USA Inc. | Description: TRANS PNP 32V 0.1A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61B,215 | NEXPERIA | Trans GP BJT PNP 32V 0.1A 250mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61B,215 | NEXPERIA | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 32V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 30...310 Mounting: SMD Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke | auf Bestellung 2860 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW61B,215 | Nexperia | Trans GP BJT PNP 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61B,215 | NEXPERIA | Description: NEXPERIA - BCW61B,215 - Bipolarer Einzeltransistor (BJT), PNP, 32 V, 100 mA, 250 mW, SOT-23, Oberflächenmontage tariffCode: 85412900 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 80hFE hazardous: false rohsPhthalatesCompliant: YES Dauer-Kollektorstrom: 100mA usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Anzahl der Pins: 3Pins Kollektor-Emitter-Spannung, max.: 32V productTraceability: Yes-Date/Lot Code Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C | auf Bestellung 9368 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW61B,215 Produktcode: 194332 | Transistoren > Bipolar-Transistoren PNP | Produkt ist nicht verfügbar | ||||||||||||||||||||
BCW61B,215 | Nexperia | Trans GP BJT PNP 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 17796 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW61B,215 | NEXPERIA | Description: NEXPERIA - BCW61B,215 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 17986 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW61B,215 | Nexperia USA Inc. | Description: TRANS PNP 32V 0.1A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Qualification: AEC-Q101 | auf Bestellung 23 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW61B-E6327 | INFINEON | auf Bestellung 99000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW61B-E6327 | INFINEON | 01+ | auf Bestellung 168000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW61BBSTA Produktcode: 19076 | NXP | Transistoren > Bipolar-Transistoren PNP Gehäuse: SOT-23 fT: 100 MHz U, V: 32 U, V: 32 I, А: 0.1 h21,max: 310 ZCODE: 8541 21 00 90 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61BBSTA | Транзисторы биполярные PNP | auf Bestellung 160 Stücke: Lieferzeit 7-21 Tag (e) | ||||||||||||||||||||
BCW61BE6327 | Infineon Technologies | Description: TRANS PNP 32V 0.1A SOT23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23-3-11 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61BE6327 | INFINEON TECHNOLOGIES | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 32V; 0.1A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz | auf Bestellung 276 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW61BE6327 | INFINEON TECHNOLOGIES | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 32V; 0.1A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz Anzahl je Verpackung: 1 Stücke | auf Bestellung 276 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW61BE6327HTSA1 | Infineon Technologies | Trans GP BJT PNP 32V 0.1A 330mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61BE6327HTSA1 | Infineon Technologies | Description: TRANS PNP 32V 0.1A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61BE6327HTSA1 | Infineon Technologies | Trans GP BJT PNP 32V 0.1A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 270000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW61BE6327HTSA1 | Infineon Technologies | Bipolar Transistors - BJT AF TRANSISTORS | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61BE6327HTSA1 | Infineon Technologies | Description: TRANS PNP 32V 0.1A SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | auf Bestellung 531000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW61BLT | Allegro | 07+ | auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW61BLT1 | MOTO | auf Bestellung 555 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW61BLT1 | onsemi | Description: TRANS GP BJT PNP 32V 0.1A 3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 225 mW | auf Bestellung 246000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW61BLT1 | ONSEMI | Description: ONSEMI - BCW61BLT1 - BCW61BLT1, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 246000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW61BLT3 | ONSEMI | Description: ONSEMI - BCW61BLT3 - BCW61BLT3, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 39500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW61BLT3 | onsemi | Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Part Status: Active | auf Bestellung 39500 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW61BMTF | onsemi | Description: TRANS PNP 32V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 350 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61BMTF | ON Semiconductor | Trans GP BJT PNP 32V 0.1A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61BMTF | ON Semiconductor / Fairchild | Bipolar Transistors - BJT SOT-23 PNP GP AMP | auf Bestellung 24000 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
BCW61BMTF | onsemi | Description: TRANS PNP 32V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 350 mW | auf Bestellung 186000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW61BMTF | Fairchild Semiconductor | Description: TRANS PNP 32V 0.1A SOT23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 350 mW | auf Bestellung 12581 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW61BMTF | ON Semiconductor | Trans GP BJT PNP 32V 0.1A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61BMTF | onsemi | Description: TRANS PNP 32V 0.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 350 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61BMTF | ONSEMI | Description: ONSEMI - BCW61BMTF - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 12581 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW61BMTF-ON | onsemi | Description: TRANS PNP 32V 0.1A SOT23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 350 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61BSOT143-1KP | PHILIPS | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW61BSOT23-BB | PHILIPS | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW61C | Infineon Technologies | Description: TRANS PNP 32V 0.1A SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61C | Nexperia | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61C | NTE Electronics, Inc | Description: TRANS PNP 32V 0.1A SOT23 Packaging: Bag Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW | auf Bestellung 2262 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW61C | Infineon Technologies | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61C | Транзисторы биполярные PNP | auf Bestellung 42 Stücke: Lieferzeit 7-21 Tag (e) | ||||||||||||||||||||
BCW61C | onsemi / Fairchild | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61C Produktcode: 30603 | NXP | Transistoren > Bipolar-Transistoren PNP Gehäuse: SOT-23 fT: 100 MHz U, V: 32 U, V: 32 I, А: 0.1 h21,max: 460 ZCODE: 8541 21 00 90 | verfügbar 1094 Stück: 250 Stück - stock Köln844 Stück - lieferbar in 3-4 Wochen |
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BCW61C /T3 | Infineon Technologies | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61C T/R | onsemi | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61C,215 | NEXPERIA | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 32V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 40...460 Mounting: SMD Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke | auf Bestellung 475 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW61C,215 | NEXPERIA | Trans GP BJT PNP 32V 0.1A 250mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61C,215 | Nexperia USA Inc. | Description: TRANS PNP 32V 0.1A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW61C,215 | NEXPERIA | Description: NEXPERIA - BCW61C,215 - Bipolarer Einzeltransistor (BJT), PNP, 32 V, 100 mA, 250 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 40hFE hazardous: false rohsPhthalatesCompliant: YES Dauer-Kollektorstrom: 100mA usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Anzahl der Pins: 3Pins Kollektor-Emitter-Spannung, max.: 32V productTraceability: Yes-Date/Lot Code Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW61C,215 | NEXPERIA | Description: NEXPERIA - BCW61C,215 - Bipolarer Einzeltransistor (BJT), PNP, 32 V, 100 mA, 250 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 40hFE hazardous: true rohsPhthalatesCompliant: YES Dauer-Kollektorstrom: 100mA usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Anzahl der Pins: 3Pins Kollektor-Emitter-Spannung, max.: 32V productTraceability: Yes-Date/Lot Code Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C | auf Bestellung 1765 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW61C,215 | BCW61C,215 Транзисторы | auf Bestellung 5078 Stücke: Lieferzeit 7-21 Tag (e) | ||||||||||||||||||||
BCW61C,215 | Nexperia USA Inc. | Description: TRANS PNP 32V 0.1A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW61C,215 | NEXPERIA | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 32V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 40...460 Mounting: SMD Kind of package: reel; tape | auf Bestellung 475 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW61C,215 | Nexperia | Trans GP BJT PNP 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61C,215 | Nexperia | Bipolar Transistors - BJT BCW61C/SOT23/TO-236AB | auf Bestellung 19600 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW61C,215 | NEXPERIA | Description: NEXPERIA - BCW61C,215 - Bipolarer Einzeltransistor (BJT), PNP, 32 V, 100 mA, 250 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 40hFE hazardous: true rohsPhthalatesCompliant: YES Dauer-Kollektorstrom: 100mA usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Anzahl der Pins: 3Pins Kollektor-Emitter-Spannung, max.: 32V productTraceability: Yes-Date/Lot Code Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C | auf Bestellung 1765 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW61C,235 | NEXPERIA | Description: NEXPERIA - BCW61C,235 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW61C,235 | NEXPERIA | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 32V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 40...460 Mounting: SMD Kind of package: reel; tape | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61C,235 | Nexperia | Trans GP BJT PNP 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61C,235 | Nexperia | Bipolar Transistors - BJT BCW61C/SOT23/TO-236AB | auf Bestellung 8898 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW61C,235 | Nexperia USA Inc. | Description: TRANS PNP 32V 0.1A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW61C,235 | NEXPERIA | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 32V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 40...460 Mounting: SMD Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61C,235 | NEXPERIA | Trans GP BJT PNP 32V 0.1A 250mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61C,235 | Nexperia USA Inc. | Description: TRANS PNP 32V 0.1A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW61C/DG/B2215 | NXP USA Inc. | Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Part Status: Active Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW | auf Bestellung 117000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW61C/DG/B2215 | NXP | Description: NXP - BCW61C/DG/B2215 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 117000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW61C/DG/B4215 | NXP | Description: NXP - BCW61C/DG/B4215 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 35990 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW61C/DG/B4215 | NXP USA Inc. | Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Part Status: Active | auf Bestellung 35990 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW61CE6327 | Infineon Technologies | Description: TRANS PNP 32V 0.1A SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | auf Bestellung 48000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW61CE6327 | Infineon | Транз. Бипол. ММ PNP SOT23 Uceo=-32V; Ic=-0,1A; f=100MHz; Pdmax=0,25W; hfe=250/460 | auf Bestellung 1245 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW61CE6327 | INFINEON | PNP Uce=32V, Ic=100mA, P=330mW, B>40, SOT23 | auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW61CE6327HTSA1 | Infineon Technologies | Description: TRANS PNP 32V 0.1A SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | auf Bestellung 53940 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW61CE6327HTSA1 | Infineon | PNP 100mA 32V 330mW 250MHz BCW61C smd TBCW61c Anzahl je Verpackung: 500 Stücke | auf Bestellung 2700 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW61CE6327HTSA1 | Infineon Technologies | Trans GP BJT PNP 32V 0.1A 330mW Automotive 3-Pin SOT-23 T/R | auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW61CE6327HTSA1 | Infineon Technologies | Description: TRANS PNP 32V 0.1A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61CE6327HTSA1 | Infineon Technologies | Trans GP BJT PNP 32V 0.1A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW61CE6327HTSA1 | Infineon Technologies | BCW61CE6327 (PNP,35V,0.2A,180MHZ,SOT-23) | auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW61CE6327HTSA1 | Infineon Technologies | Description: TRANS PNP 32V 0.1A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61CE6327HTSA1 | Infineon Technologies | Trans GP BJT PNP 32V 0.1A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW61CMTF | onsemi | Description: TRANS PNP 32V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 350 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61CMTF | ON Semiconductor | Trans GP BJT PNP 32V 0.1A 350mW 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61CT116 | Rohm Semiconductor | Description: TRANS PNP 32V 0.2A SST3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 180MHz Supplier Device Package: SST3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 32 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61CT116 | Rohm Semiconductor | Description: TRANS PNP 32V 0.2A SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 180MHz Supplier Device Package: SST3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 32 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61CT116 | ROHM Semiconductor | Bipolar Transistors - BJT PNP 32V 200MA | auf Bestellung 2866 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
BCW61D | onsemi | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61D | Philips | Транз. Бипол. ММ PNP SOT23 Uceo=-32V; Ic=-0,1A; f=100MHz; Pdmax=0,25W; hfe=380/630 | auf Bestellung 24684 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW61D | Nexperia | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61D Produktcode: 1360 | Infineon | Transistoren > Bipolar-Transistoren PNP Gehäuse: SOT-23 fT: 100 MHz U, V: 32 U, V: 32 I, А: 0.2 h21,max: 630 ZCODE: 8541 21 00 90 | auf Bestellung 20 Stück: Lieferzeit 21-28 Tag (e) |
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BCW61D | NXP/Nexperia/We-En | Транзистор PNP; Uceo, В = -32; Ic = -100 мА; ft, МГц = 100; hFE = 380...630 @ Ic = -50 mA, Uce = -1 V; Icutoff-max = -20 нА; Uceo(sat), В @ Ic, Ib = -335 @ -50 mA, -1,25 mA; Р, Вт = 0,25 Вт; Тексп, °C = -65...+150; Тип монт. = smd; SOT-23-3 | auf Bestellung 2317 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW61D | NXP | PNP 200mA 32V 330mW 180MHz BCW61D TBCW61d Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW61D,215 | Nexperia | Trans GP BJT PNP 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 291 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW61D,215 | Nexperia | Trans GP BJT PNP 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 291 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW61D,215 | Nexperia USA Inc. | Description: TRANS PNP 32V 0.1A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW61D,215 | NEXPERIA | Description: NEXPERIA - BCW61D,215 - Bipolarer HF-Transistor, PNP, -32 V, 100 MHz, 250 mW, -100 mA, SOT-23 tariffCode: 85412100 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 630hFE hazardous: false rohsPhthalatesCompliant: YES Dauer-Kollektorstrom: -100mA usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Anzahl der Pins: 3Pins Kollektor-Emitter-Spannung, max.: -32V productTraceability: Yes-Date/Lot Code Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C | auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW61D,215 | NEXPERIA | Trans GP BJT PNP 32V 0.1A 250mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61D,215 | Nexperia | Trans GP BJT PNP 32V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61D,215 | Nexperia | Bipolar Transistors - BJT BCW61D/SOT23/TO-236AB | auf Bestellung 3921 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW61D,215 | NEXPERIA | Description: NEXPERIA - BCW61D,215 - Bipolarer HF-Transistor, PNP, -32 V, 100 MHz, 250 mW, -100 mA, SOT-23 tariffCode: 85412100 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 630hFE hazardous: false rohsPhthalatesCompliant: YES Dauer-Kollektorstrom: -100mA usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Anzahl der Pins: 3Pins Kollektor-Emitter-Spannung, max.: -32V productTraceability: Yes-Date/Lot Code Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C | auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW61D,215 | Nexperia USA Inc. | Description: TRANS PNP 32V 0.1A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 6086 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW61D/BDP | PHILIPS | auf Bestellung 5122 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW61DE6327 | Infineon | Транз. Бипол. ММ PNP SOT23 Uceo=-32V; Ic=-0,1A; f=100MHz; Pdmax=0,25W; hfe=380/630 | auf Bestellung 645 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW61DE6327 | Infineon Technologies | Description: TRANS PNP 32V 0.1A SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | auf Bestellung 64915 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW61DE6327 | INFINEON | PNP, 32 В, 100 мА, 330 мВт | auf Bestellung 5402 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW61DE6327HTSA1 | Infineon Technologies | Trans GP BJT PNP 32V 0.1A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW61DE6327HTSA1 | Infineon Technologies | Trans GP BJT PNP 32V 0.1A 330mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61DE6327HTSA1 | Infineon Technologies | Description: TRANS PNP 32V 0.1A SOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61DE6327HTSA1 | Infineon Technologies | Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61DE6327HTSA1 | Infineon Technologies | Description: TRANS PNP 32V 0.1A SOT-23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | auf Bestellung 190400 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW61DE6327HTSA1 | Infineon Technologies | Trans GP BJT PNP 32V 0.1A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW61DE6327HTSA1 | Infineon Technologies | Description: TRANS PNP 32V 0.1A SOT-23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61DE6327HTSA1 | Infineon Technologies | Trans GP BJT PNP 32V 0.1A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61DE6327HTSA1 : BCW61DE6327 | Infineon Technologies | BCW61DE6327 TRANS PNP 32V 0.1A SOT-23 | auf Bestellung 421 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW61DLT1 | onsemi | Description: TRANS GP BJT PNP 32V 0.1A Packaging: Bulk Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61DMTF | onsemi | Description: TRANS PNP 32V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 350 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61DMTF | ON Semiconductor | Trans GP BJT PNP 32V 0.1A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61DTA | Diodes Incorporated | Description: TRANS PNP 32V 0.2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Frequency - Transition: 180MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW61DTA | Diodes Incorporated | Description: TRANS PNP 32V 0.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Frequency - Transition: 180MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW61DTA | Diodes Incorporated | Description: TRANS PNP 32V 0.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Frequency - Transition: 180MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61E6384HTMA1 | Infineon Technologies | Trans GP BJT PNP 32V 0.1A Automotive 3-Pin SOT-23 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61E6384HTMA1 | Infineon Technologies | Description: TRANSISTOR AF SOT23 Packaging: Bulk Part Status: Last Time Buy | auf Bestellung 570000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW61E6384HTMA1 | Infineon Technologies | Description: TRANSISTOR AF SOT23 Packaging: Tape & Reel (TR) Part Status: Last Time Buy | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW61FN | auf Bestellung 1420 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BCW62D | infineon | 04+ SOT-23 | auf Bestellung 3100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW64FN | infineon | 04+ SOT-23 | auf Bestellung 3100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW65A | Infineon Technologies | Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW65ALT1 | onsemi | Description: TRANS NPN 32V 0.8A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 225 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW65ALT1G | ONSEMI | Description: ONSEMI - BCW65ALT1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 65044 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW65ALT1G Produktcode: 53614 | Transistoren > Bipolar-Transistoren NPN | Produkt ist nicht verfügbar | ||||||||||||||||||||
BCW65ALT1G | ON Semiconductor | Trans GP BJT NPN 32V 0.8A 300mW 3-Pin SOT-23 T/R | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW65ALT1G | onsemi | Description: TRANS NPN 32V 0.8A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 225 mW | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW65ALT1G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.8A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.8A Power dissipation: 0.3W Case: SOT23 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Anzahl je Verpackung: 25 Stücke | auf Bestellung 300 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW65ALT1G | ON Semiconductor | Trans GP BJT NPN 32V 0.8A 300mW 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW65ALT1G | ON Semiconductor | Trans GP BJT NPN 32V 0.8A 300mW 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW65ALT1G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.8A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.8A Power dissipation: 0.3W Case: SOT23 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz | auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW65ALT1G | onsemi | Description: TRANS NPN 32V 0.8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 225 mW | auf Bestellung 13466 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW65ALT1G | onsemi | Bipolar Transistors - BJT 100mA 60V NPN | auf Bestellung 6085 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW65ALT1G | ON Semiconductor | Trans GP BJT NPN 32V 0.8A 300mW 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW65B | Infineon Technologies | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW65B | onsemi / Fairchild | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW65B(Z) | Diodes Incorporated | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW65BTA | Diodes Incorporated | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW65BTC | Diodes Incorporated | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW65BTC | ROHM Semiconductor | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW65C | INFINEON | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW65C | Infineon Technologies | Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW65C | SM | auf Bestellung 357000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW65C-T&R-SIE | Infineon Technologies | NPN 32 V 1 A 100 MHz SOT-23 | auf Bestellung 1175 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW65CLT1 | onsemi | Description: TRANS NPN 32V 0.8A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 225 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW65CLT1 | onsemi | Description: TRANS NPN 32V 0.8A SOT23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 225 mW | auf Bestellung 66000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW65CLT1 | ONSEMI | Description: ONSEMI - BCW65CLT1 - BCW65CLT1, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 66000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW65CLT1G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.8A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.8A Power dissipation: 0.3W Case: SOT23 Current gain: 250...630 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Anzahl je Verpackung: 25 Stücke | auf Bestellung 3250 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW65CLT1G | ON Semiconductor | Trans GP BJT NPN 32V 0.8A 300mW 3-Pin SOT-23 T/R | auf Bestellung 32070 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW65CLT1G | onsemi | Bipolar Transistors - BJT 100mA 60V NPN | auf Bestellung 26730 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW65CLT1G | onsemi | Description: TRANS NPN 32V 0.8A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 225 mW | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW65CLT1G | ONSEMI | Description: ONSEMI - BCW65CLT1G - Bipolarer Einzeltransistor (BJT), NPN, 32 V, 800 mA, 225 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 800mA MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 225mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pins Produktpalette: - Kollektor-Emitter-Spannung, max.: 32V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C | auf Bestellung 15235 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW65CLT1G | ON Semiconductor | Trans GP BJT NPN 32V 0.8A 300mW 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW65CLT1G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.8A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.8A Power dissipation: 0.3W Case: SOT23 Current gain: 250...630 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz | auf Bestellung 3250 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW65CLT1G | ON Semiconductor | Trans GP BJT NPN 32V 0.8A 300mW 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW65CLT1G | ON Semiconductor | Trans GP BJT NPN 32V 0.8A 300mW 3-Pin SOT-23 T/R | auf Bestellung 32070 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW65CLT1G | onsemi | Description: TRANS NPN 32V 0.8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 225 mW | auf Bestellung 13508 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW65CLT1G | ONSEMI | Description: ONSEMI - BCW65CLT1G - Bipolarer Einzeltransistor (BJT), NPN, 32 V, 800 mA, 225 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 800mA MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 225mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pins Produktpalette: - Kollektor-Emitter-Spannung, max.: 32V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C | auf Bestellung 15235 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW65CTA | ZETEX | auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW65CTAEC | ZETEX | 01+ SOT-23 | auf Bestellung 90100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW66 | onsemi | onsemi LESHANBE SS SOT23 GP XSTR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66E-6359 | auf Bestellung 45000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BCW66F | DIOTEC SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.6A; 300mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23 Current gain: 50...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz | auf Bestellung 3925 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW66F | Diotec Semiconductor | Trans GP BJT NPN 45V 0.6A 300mW 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66F | Diotec Semiconductor | Trans GP BJT NPN 45V 0.6A 300mW 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66F | Rectron | Current & Power Monitors & Regulators Bipolar NPN Trans .8A, 75V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66F | DIOTEC SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.6A; 300mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23 Current gain: 50...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Anzahl je Verpackung: 25 Stücke | auf Bestellung 3925 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW66F | Diotec Semiconductor | Description: IC Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66F | Diotec Electronics | Trans GP BJT NPN 45V 0.6A 300mW 3-Pin SOT-23 T/R | auf Bestellung 3925 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66F | Diotec Semiconductor | Bipolar Transistors - BJT BJT, SOT-23, 45V, 600mA, NPN | auf Bestellung 2855 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW66F-TP | Micro Commercial Co | Description: Interface Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 200 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66F-TP | Micro Commercial Components (MCC) | Bipolar Transistors - BJT NPN SILICON TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66F215 | NXP USA Inc. | Description: BCW66 - SMALL SIGNAL BIPOLAR TRA Packaging: Bulk Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66FN | auf Bestellung 10540 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BCW66FR | Nexperia | Bipolar Transistors - BJT BCW66F/SOT23/TO-236AB | auf Bestellung 71249 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW66FR | Nexperia USA Inc. | Description: TRANS NPN 45V 0.8A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66FR | Nexperia | Trans GP BJT NPN 45V 0.8A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66FR | NEXPERIA | Description: NEXPERIA - BCW66FR - Bipolarer Einzeltransistor (BJT), NPN, 45 V, 800 mA, 250 mW, TO-236AB (SOT-23) tariffCode: 85412100 Transistormontage: Oberflächenmontage hazardous: false Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 800 MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 250 Bauform - Transistor: TO-236AB (SOT-23) Anzahl der Pins: 3 Produktpalette: BCW66 Series Kollektor-Emitter-Spannung, max.: 45 Wandlerpolarität: NPN Übergangsfrequenz: 100 Betriebstemperatur, max.: 150 SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66FR | NEXPERIA | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.8A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 1A Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Anzahl je Verpackung: 25 Stücke | auf Bestellung 5175 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW66FR | Nexperia | Trans GP BJT NPN 45V 0.8A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW66FR | NEXPERIA | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.8A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 1A Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz | auf Bestellung 5175 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW66FR | NEXPERIA | Trans GP BJT NPN 45V 0.8A 250mW Automotive 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66FR | Nexperia USA Inc. | Description: TRANS NPN 45V 0.8A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Qualification: AEC-Q101 | auf Bestellung 2074 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW66FR | Nexperia | Trans GP BJT NPN 45V 0.8A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW66FTAEF | ZETEX | 01+ SOT-23 | auf Bestellung 18100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW66FTCEF | ZETEX | SOT-23 | auf Bestellung 90100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW66FVL | Nexperia USA Inc. | Description: BCW66FSOT23TO-236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3400 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW66FVL | NEXPERIA | Description: NEXPERIA - BCW66FVL - Bipolarer Einzeltransistor (BJT), NPN, 45 V, 800 mA, 250 mW, TO-236AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 800mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: TO-236AB Anzahl der Pins: 3Pin(s) Produktpalette: BCW66 Kollektor-Emitter-Spannung, max.: 45V productTraceability: No Wandlerpolarität: NPN Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C | auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66FVL | Nexperia | Trans GP BJT NPN 45V 0.8A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66FVL | NEXPERIA | Trans GP BJT NPN 45V 0.8A 250mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66FVL | Nexperia USA Inc. | Description: BCW66FSOT23TO-236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66FVL | NEXPERIA | Description: NEXPERIA - BCW66FVL - Bipolarer Einzeltransistor (BJT), NPN, 45 V, 800 mA, 250 mW, TO-236AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 800mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: TO-236AB Anzahl der Pins: 3Pin(s) Produktpalette: BCW66 Kollektor-Emitter-Spannung, max.: 45V productTraceability: No Wandlerpolarität: NPN Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C | auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66FVL | Nexperia | Bipolar Transistors - BJT BCW66F/SOT23/TO-236AB | auf Bestellung 27025 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW66G | onsemi | Description: TRANS NPN 45V 1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66G | MULTICOMP PRO | Description: MULTICOMP PRO - BCW66G - Bipolarer Einzeltransistor (BJT), NPN, 45 V, 800 mA, 330 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 400hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 800mA MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 330mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 45V productTraceability: No Wandlerpolarität: NPN Übergangsfrequenz: 170MHz Betriebstemperatur, max.: 150°C | auf Bestellung 2600 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66G | onsemi / Fairchild | Bipolar Transistors - BJT SOT-23 NPN GP AMP | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66G | onsemi | Description: TRANS NPN 45V 1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66G | ON Semiconductor | Trans GP BJT NPN 45V 1A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66G | ON Semiconductor | Trans GP BJT NPN 45V 1A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66G-D87Z | ON Semiconductor | Trans GP BJT NPN 45V 1A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66G-TP | Micro Commercial Components | Trans GP BJT NPN 45V 0.8A 200mW 3-Pin SOT-23 T/R | auf Bestellung 69000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66G-TP | Micro Commercial Components | Trans GP BJT NPN 45V 0.8A 200mW 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66G-TP | Micro Commercial Components | Trans GP BJT NPN 45V 0.8A 200mW 3-Pin SOT-23 T/R | auf Bestellung 69000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW66G-TP | Micro Commercial Co | Description: Interface Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 200 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66G-TP | Micro Commercial Components (MCC) | Bipolar Transistors - BJT NPN Plastic-Encapsulate Transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66G-TP | Micro Commercial Components | Trans GP BJT NPN 45V 0.8A 200mW 3-Pin SOT-23 T/R | auf Bestellung 69000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW66G215 | NXP USA Inc. | Description: BCW66 - SMALL SIGNAL BIPOLAR TRA Packaging: Bulk Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66GLT1 | LRC | SOT-23 03+ | auf Bestellung 2200 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW66GLT1 | ON | SOT23 | auf Bestellung 302 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW66GLT1 | onsemi | Description: TRANS NPN 45V 0.8A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66GLT1G | ONSEMI | Description: ONSEMI - BCW66GLT1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66GLT1G | ON Semiconductor | Trans GP BJT NPN 45V 0.8A 300mW 3-Pin SOT-23 T/R | auf Bestellung 360000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW66GLT1G | ON Semiconductor | Trans GP BJT NPN 45V 0.8A 300mW 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66GLT1G | onsemi | Description: TRANS NPN 45V 0.8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW | auf Bestellung 22081 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW66GLT1G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.3W Case: SOT23 Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz | auf Bestellung 2925 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW66GLT1G | ON Semiconductor | Trans GP BJT NPN 45V 0.8A 300mW 3-Pin SOT-23 T/R | auf Bestellung 29350 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66GLT1G | ON Semiconductor | Trans GP BJT NPN 45V 0.8A 300mW 3-Pin SOT-23 T/R | auf Bestellung 1362 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66GLT1G | ONSEMI | Description: ONSEMI - BCW66GLT1G - Bipolarer Einzeltransistor (BJT), universell, NPN, 45 V, 800 mA, 300 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 60hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 800mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 300mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 45V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C | auf Bestellung 13915 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66GLT1G | onsemi | Bipolar Transistors - BJT SS GP XSTR NPN 45V | auf Bestellung 124314 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW66GLT1G | ON Semiconductor | Trans GP BJT NPN 45V 0.8A 300mW 3-Pin SOT-23 T/R | auf Bestellung 29350 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW66GLT1G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.3W Case: SOT23 Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Anzahl je Verpackung: 25 Stücke | auf Bestellung 2925 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW66GLT1G | onsemi | Description: TRANS NPN 45V 0.8A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW | auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW66GLT1G | ON Semiconductor | Trans GP BJT NPN 45V 0.8A 300mW 3-Pin SOT-23 T/R | auf Bestellung 366000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66GLT1G | ON Semiconductor | Trans GP BJT NPN 45V 0.8A 300mW 3-Pin SOT-23 T/R | auf Bestellung 1362 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW66GLT1G Produktcode: 173997 | Transistoren > Bipolar-Transistoren NPN | Produkt ist nicht verfügbar | ||||||||||||||||||||
BCW66GLT1G | ONSEMI | Description: ONSEMI - BCW66GLT1G - Bipolarer Einzeltransistor (BJT), universell, NPN, 45 V, 800 mA, 300 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 60hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 800mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 300mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 45V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C | auf Bestellung 13915 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66GLT1G | ON Semiconductor | Trans GP BJT NPN 45V 0.8A 300mW 3-Pin SOT-23 T/R | auf Bestellung 360000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW66GLT3G | onsemi | Bipolar Transistors - BJT GENRL TRANSISTOR | auf Bestellung 59307 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW66GLT3G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.3W Case: SOT23 Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66GLT3G | ON Semiconductor | Trans GP BJT NPN 45V 0.8A 300mW 3-Pin SOT-23 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW66GLT3G | onsemi | Description: TRANS NPN 45V 0.8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW | auf Bestellung 232363 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW66GLT3G | ON Semiconductor | Trans GP BJT NPN 45V 0.8A 300mW 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW66GLT3G | ONSEMI | Description: ONSEMI - BCW66GLT3G - Transistor, NPN, 45V, 0.8A, 150°C, 0.225W, SOT-23, 100MHz tariffCode: 85412900 Transistormontage: Oberflächenmontage DC-Stromverstärkung (hFE), min.: 160 hazardous: false DC-Stromverstärkung hFE: 160 Qualifikation: - Dauer-Kollektorstrom: 800 MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 225 Bauform - Transistor: SOT-23 Anzahl der Pins: 3 Produktpalette: - Kollektor-Emitter-Spannung, max.: 45 Wandlerpolarität: NPN Übergangsfrequenz: 100 Betriebstemperatur, max.: 150 SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66GLT3G | ON Semiconductor | Trans GP BJT NPN 45V 0.8A 300mW 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66GLT3G | onsemi | Description: TRANS NPN 45V 0.8A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW | auf Bestellung 220000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW66GLT3G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.3W Case: SOT23 Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66GLT3G | ON Semiconductor | Trans GP BJT NPN 45V 0.8A 300mW 3-Pin SOT-23 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66GLT3G | ON Semiconductor | Trans GP BJT NPN 45V 0.8A 300mW 3-Pin SOT-23 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW66GR | Nexperia | Trans GP BJT NPN 45V 0.8A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66GR | NEXPERIA | Description: NEXPERIA - BCW66GR - Bipolarer Einzeltransistor (BJT), NPN, 45 V, 800 mA, 250 mW, TO-236AB (SOT-23) tariffCode: 85412100 Transistormontage: Oberflächenmontage hazardous: false Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 800 MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 250 Bauform - Transistor: TO-236AB (SOT-23) Anzahl der Pins: 3 Produktpalette: BCW66 Series Kollektor-Emitter-Spannung, max.: 45 Wandlerpolarität: NPN Übergangsfrequenz: 100 Betriebstemperatur, max.: 150 SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66GR | NEXPERIA | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.8A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 1A Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz | auf Bestellung 13110 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW66GR | NEXPERIA | Trans GP BJT NPN 45V 0.8A 250mW Automotive 3-Pin SOT-23 T/R | auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66GR | Nexperia USA Inc. | Description: TRANS NPN 45V 0.8A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2470 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW66GR | Nexperia | Bipolar Transistors - BJT BCW66G/SOT23/TO-236AB | auf Bestellung 7675 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW66GR | NEXPERIA | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.8A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 1A Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Anzahl je Verpackung: 25 Stücke | auf Bestellung 13110 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW66GR | Nexperia USA Inc. | Description: TRANS NPN 45V 0.8A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66GVL | NEXPERIA | Trans GP BJT NPN 45V 0.8A 250mW Automotive 3-Pin SOT-23 T/R | auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66GVL | Nexperia USA Inc. | Description: TRANS NPN 45V 0.8A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 70000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW66GVL | Nexperia | Bipolar Transistors - BJT BCW66G/SOT23/TO-236AB | auf Bestellung 28070 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW66GVL | Nexperia | Trans GP BJT NPN 45V 0.8A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66GVL | NEXPERIA | Description: NEXPERIA - BCW66GVL - Bipolarer Einzeltransistor (BJT), NPN, 45 V, 800 mA, 250 mW, TO-236AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 160hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 800mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: TO-236AB Anzahl der Pins: 3Pin(s) Produktpalette: BCW66 Kollektor-Emitter-Spannung, max.: 45V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C | auf Bestellung 19760 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66GVL | Nexperia | Trans GP BJT NPN 45V 0.8A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW66GVL | Nexperia | Trans GP BJT NPN 45V 0.8A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66GVL | Nexperia USA Inc. | Description: TRANS NPN 45V 0.8A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 86734 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW66GVL | NEXPERIA | Description: NEXPERIA - BCW66GVL - Bipolarer Einzeltransistor (BJT), NPN, 45 V, 800 mA, 250 mW, TO-236AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 160hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 800mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: TO-236AB Anzahl der Pins: 3Pin(s) Produktpalette: BCW66 Kollektor-Emitter-Spannung, max.: 45V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C | auf Bestellung 19760 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66GVL | Nexperia | Trans GP BJT NPN 45V 0.8A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW66G_D87Z | onsemi | Description: TRANS NPN 45V 1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66H | ZETEX | 06+; | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW66H | MULTICOMP PRO | Description: MULTICOMP PRO - BCW66H - Bipolarer Einzeltransistor (BJT), NPN, 45 V, 800 mA, 330 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 630hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 800mA MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 330mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 45V productTraceability: No Wandlerpolarität: NPN Übergangsfrequenz: 170MHz Betriebstemperatur, max.: 150°C | auf Bestellung 6992 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66H (BCW66HTA) Transistor Produktcode: 79944 | Verschiedene Bauteile > Other components 3 | Produkt ist nicht verfügbar | ||||||||||||||||||||
BCW66H EH. | Infineon | NPN 800mA 45V 330mW 100MHz-170MHz hfe160min (100mA) BCW66HB6327, BCW66HE6327, BCW66HTA, BCW66HTC BCW66H INFINEON TBCW66h Anzahl je Verpackung: 100 Stücke | auf Bestellung 400 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW66H-TP | Micro Commercial Components | Trans GP BJT NPN 45V 1A 330mW 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66H-TP | Micro Commercial Components (MCC) | Bipolar Transistors - BJT NPN Plastic-Encapsulate Transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66H-TP | Micro Commercial Co | Description: Interface Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66HQTA | Diodes Zetex | Trans GP BJT NPN 45V 0.8A 350mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66HQTA | Diodes Incorporated | Description: TRANS NPN 45V 0.8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Grade: Automotive Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 310 mW Qualification: AEC-Q101 | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW66HQTA | DIODES INC. | Description: DIODES INC. - BCW66HQTA - Bipolarer Einzeltransistor (BJT), NPN, 45 V, 800 mA, 350 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 250hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 800mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: PW Series Kollektor-Emitter-Spannung, max.: 45V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2985 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66HQTA | Diodes Inc | Trans GP BJT NPN 45V 0.8A 350mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66HQTA | Diodes Incorporated | Bipolar Transistors - BJT General Purpose Transistor | auf Bestellung 2684 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW66HQTA | Diodes Incorporated | Description: TRANS NPN 45V 0.8A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Grade: Automotive Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 310 mW Qualification: AEC-Q101 | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW66HQTA | DIODES INC. | Description: DIODES INC. - BCW66HQTA - Bipolarer Einzeltransistor (BJT), NPN, 45 V, 800 mA, 350 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 250hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 800mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: PW Series Kollektor-Emitter-Spannung, max.: 45V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2985 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66HQTA | Diodes Zetex | Trans GP BJT NPN 45V 0.8A 350mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW66HR | Nexperia | Trans GP BJT NPN 45V 0.8A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW66HR | NEXPERIA | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.8A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 1A Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz | auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW66HR | Nexperia | Trans GP BJT NPN 45V 0.8A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66HR | Nexperia USA Inc. | Description: TRANS NPN 45V 0.8A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 26077 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW66HR | NEXPERIA | Description: NEXPERIA - BCW66HR - Bipolarer Einzeltransistor (BJT), NPN, 45 V, 800 mA, 250 mW, TO-236AB, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 250hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 800mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: TO-236AB Anzahl der Pins: 3Pin(s) Produktpalette: BCW66 Kollektor-Emitter-Spannung, max.: 45V productTraceability: No Wandlerpolarität: NPN Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C | auf Bestellung 2175 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66HR | Nexperia | Trans GP BJT NPN 45V 0.8A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW66HR | NEXPERIA | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.8A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 1A Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Anzahl je Verpackung: 25 Stücke | auf Bestellung 2400 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW66HR | Nexperia | Trans GP BJT NPN 45V 0.8A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW66HR | Nexperia USA Inc. | Description: TRANS NPN 45V 0.8A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW66HR | NEXPERIA | Description: NEXPERIA - BCW66HR - Bipolarer Einzeltransistor (BJT), NPN, 45 V, 800 mA, 250 mW, TO-236AB, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 250hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 800mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: TO-236AB Anzahl der Pins: 3Pin(s) Produktpalette: BCW66 Kollektor-Emitter-Spannung, max.: 45V productTraceability: No Wandlerpolarität: NPN Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C | auf Bestellung 2175 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66HR | Nexperia | Trans GP BJT NPN 45V 0.8A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW66HR | NEXPERIA | Trans GP BJT NPN 45V 0.8A 250mW Automotive 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66HR | Nexperia | Bipolar Transistors - BJT BCW66H/SOT23/TO-236AB | auf Bestellung 381846 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW66HTA | DIODES INCORPORATED | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.8A; 330mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.33W Case: SOT23 Current gain: 80...630 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Anzahl je Verpackung: 5 Stücke | auf Bestellung 2305 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW66HTA | Diodes Zetex | Trans GP BJT NPN 45V 0.8A 350mW 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66HTA | Diodes Zetex | Trans GP BJT NPN 45V 0.8A 350mW 3-Pin SOT-23 T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW66HTA | Diodes Inc | Trans GP BJT NPN 45V 0.8A 350mW 3-Pin SOT-23 T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66HTA | Diodes Incorporated | Description: TRANS NPN 45V 0.8A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW66HTA | DIODES INC. | Description: DIODES INC. - BCW66HTA - Bipolarer Einzeltransistor (BJT), Universal, NPN, 45 V, 500 mA, 330 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 350hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 500mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 330mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 45V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C | auf Bestellung 3825 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66HTA | Diodes Incorporated | Bipolar Transistors - BJT NPN Low Saturation | auf Bestellung 34810 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW66HTA | DIODES INCORPORATED | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.8A; 330mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.33W Case: SOT23 Current gain: 80...630 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz | auf Bestellung 2305 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW66HTA | Diodes Zetex | Trans GP BJT NPN 45V 0.8A 350mW 3-Pin SOT-23 T/R | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66HTA | Diodes Incorporated | Description: TRANS NPN 45V 0.8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW | auf Bestellung 12110 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW66HTA | DIODES INC. | Description: DIODES INC. - BCW66HTA - Bipolarer Einzeltransistor (BJT), Universal, NPN, 45 V, 500 mA, 330 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 350hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 500mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 330mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 45V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C | auf Bestellung 3825 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66HTA | Diodes Zetex | Trans GP BJT NPN 45V 0.8A 350mW 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW66HTC | Diodes Incorporated | Description: TRANS NPN 45V 0.8A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66HVL | NEXPERIA | Trans GP BJT NPN 45V 0.8A 250mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66HVL | NEXPERIA | Description: NEXPERIA - BCW66HVL - Bipolarer Einzeltransistor (BJT), NPN, 45 V, 800 mA, 250 mW, TO-236AB, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 250hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 800mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: TO-236AB Anzahl der Pins: 3Pin(s) Produktpalette: BCW66 Kollektor-Emitter-Spannung, max.: 45V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C | auf Bestellung 20920 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66HVL | Nexperia | Bipolar Transistors - BJT BCW66H/SOT23/TO-236AB | auf Bestellung 25574 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW66HVL | Nexperia USA Inc. | Description: BCW66HSOT23TO-236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 84785 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW66HVL | Nexperia | Trans GP BJT NPN 45V 0.8A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66HVL | Nexperia USA Inc. | Description: BCW66HSOT23TO-236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 80000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW66HVL | NEXPERIA | Description: NEXPERIA - BCW66HVL - Bipolarer Einzeltransistor (BJT), NPN, 45 V, 800 mA, 250 mW, TO-236AB, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 250hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 800mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: TO-236AB Anzahl der Pins: 3Pin(s) Produktpalette: BCW66 Kollektor-Emitter-Spannung, max.: 45V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C | auf Bestellung 20920 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66KE6359HTMA1 | Infineon Technologies | Trans GP BJT NPN 45V 0.8A 500mW Automotive AEC-Q101 3-Pin SOT-23 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66KE6359HTMA1 | Infineon Technologies | Description: TRANS NPN 45V 0.8A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V Frequency - Transition: 170MHz Supplier Device Package: PG-SOT23 Grade: Automotive Part Status: Last Time Buy Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66KFE6327 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.5W Case: SOT23 Mounting: SMD Frequency: 170MHz | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66KFE6327 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.5W Case: SOT23 Mounting: SMD Frequency: 170MHz Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66KFE6327HTSA1 | Infineon Technologies | Trans GP BJT NPN 45V 0.8A 500mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 168000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW66KFE6327HTSA1 | Infineon Technologies | Description: TRANS NPN 45V 0.8A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 170MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66KFE6327HTSA1 | Infineon Technologies | Trans GP BJT NPN 45V 0.8A 500mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW66KFE6327HTSA1 | Infineon Technologies | Trans GP BJT NPN 45V 0.8A 500mW Automotive 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66KFE6327HTSA1 | Infineon Technologies | Trans GP BJT NPN 45V 0.8A 500mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66KFE6327HTSA1 | Infineon Technologies | Trans GP BJT NPN 45V 0.8A 500mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW66KGE6327HTSA1 | Infineon Technologies | Description: TRANS NPN 45V 0.8A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 170MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66KGE6327HTSA1 | Infineon Technologies | Trans GP BJT NPN 45V 0.8A 500mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66KGE6327HTSA1 | Infineon Technologies | Trans GP BJT NPN 45V 0.8A 500mW Automotive 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66KGE6327HTSA1 | Infineon Technologies | Description: TRANS NPN 45V 0.8A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 170MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66KHB6327 | INFINEON | 09+ SOT-235 | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW66KHB6327HTLA1 | Infineon Technologies | Description: TRANS NPN 45V 0.8A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 170MHz Supplier Device Package: PG-SOT23 Part Status: Obsolete Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66KHE6327 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23 Case: SOT23 Mounting: SMD Frequency: 170MHz Collector-emitter voltage: 45V Collector current: 0.8A Type of transistor: NPN Power dissipation: 0.5W Polarisation: bipolar | auf Bestellung 1143 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW66KHE6327 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23 Case: SOT23 Mounting: SMD Frequency: 170MHz Collector-emitter voltage: 45V Collector current: 0.8A Type of transistor: NPN Power dissipation: 0.5W Polarisation: bipolar Anzahl je Verpackung: 1 Stücke | auf Bestellung 1143 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW66KHE6327HTSA1 | Infineon Technologies | Trans GP BJT NPN 45V 0.8A 500mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 186000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW66KHE6327HTSA1 | Infineon Technologies | Trans GP BJT NPN 45V 0.8A 500mW Automotive 3-Pin SOT-23 T/R | auf Bestellung 177000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW66KHE6327HTSA1 | Infineon Technologies | Description: TRANS NPN 45V 0.8A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 170MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW | auf Bestellung 44974 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW66KHE6327HTSA1 | Infineon | NPN 800mA 45V 500mW 170MHz BCW66KH TBCW66kh Anzahl je Verpackung: 100 Stücke | auf Bestellung 2950 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW66KHE6327HTSA1 | Infineon Technologies | Trans GP BJT NPN 45V 0.8A 500mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66KHE6327HTSA1 | Infineon Technologies | Bipolar Transistors - BJT NPN 45.0 V 100 mA | auf Bestellung 321633 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW66KHE6327HTSA1 | Infineon Technologies | Trans GP BJT NPN 45V 0.8A 500mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW66KHE6327HTSA1 | Infineon Technologies | Description: TRANS NPN 45V 0.8A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 170MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW | auf Bestellung 44974 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW66KHE6327HTSA1 | Infineon Technologies | Trans GP BJT NPN 45V 0.8A 500mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 186000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW67 | INFINEON | 04+ SOT-23 | auf Bestellung 12100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW67A | SM | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW67A | Infineon Technologies | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW67A | INFINEON | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW67AE6327 | Infineon Technologies | Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT23-3-1 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | auf Bestellung 39000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW67AE6327XT | Infineon Technologies | Trans GP BJT PNP 32V 0.8A 330mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW67B | SM | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW67B | INFINEON | auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW67BE6327 | INFINEON TECHNOLOGIES | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 32V; 0.8A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.8A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 200MHz | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW67BE6327 | INFINEON TECHNOLOGIES | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 32V; 0.8A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.8A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 200MHz | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW67BE6327 | Infineon Technologies | Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT23-3-1 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW67BE6327HTSA1 | Infineon Technologies | Description: TRANS PNP 32V 0.8A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT23 Part Status: Not For New Designs Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW67BE6327HTSA1 | Infineon Technologies | Trans GP BJT PNP 32V 0.8A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW67BE6327HTSA1 | Infineon Technologies | Trans GP BJT PNP 32V 0.8A 330mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW67BE6327HTSA1 | Infineon | PNP 800mA 32V 330mW 200MHz BCW67B TBCW67b Anzahl je Verpackung: 500 Stücke | auf Bestellung 2500 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW67BE6327HTSA1 | Infineon Technologies | Description: TRANS PNP 32V 0.8A SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT23 Part Status: Not For New Designs Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | auf Bestellung 379951 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW67BE6327HTSA1 | Infineon Technologies | Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW67C | INFINEON | 04+ DIP | auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW67C | Infineon Technologies | Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT23-3-1 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | auf Bestellung 176900 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW67C | INFINEON | 09+ | auf Bestellung 3018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW67C | infineon | 04+ SOT-23 | auf Bestellung 3100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW67CE6327 | INFINEON TECHNOLOGIES | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 32V; 0.8A; 0.33W; SOT23 Mounting: SMD Case: SOT23 Collector current: 0.8A Collector-emitter voltage: 32V Polarisation: bipolar Power dissipation: 0.33W Frequency: 200MHz Type of transistor: PNP | auf Bestellung 3010 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW67CE6327 | INFINEON TECHNOLOGIES | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 32V; 0.8A; 0.33W; SOT23 Mounting: SMD Case: SOT23 Collector current: 0.8A Collector-emitter voltage: 32V Polarisation: bipolar Power dissipation: 0.33W Frequency: 200MHz Type of transistor: PNP | auf Bestellung 3010 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW67CE6327HTSA1 | Infineon Technologies | Trans GP BJT PNP 32V 0.8A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW67CE6327HTSA1 | Infineon Technologies | Trans GP BJT PNP 32V 0.8A 330mW Automotive 3-Pin SOT-23 T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW67CE6327HTSA1 | Infineon Technologies | Trans GP BJT PNP 32V 0.8A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW67CE6327HTSA1 | Infineon Technologies | Trans GP BJT PNP 32V 0.8A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 126000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW67CE6327HTSA1 | Infineon Technologies | Trans GP BJT PNP 32V 0.8A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW67CE6327HTSA1 | Infineon Technologies | Description: TRANS PNP 32V 0.8A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT23 Part Status: Not For New Designs Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68 | INFINEON | 02+ QFP | auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW68 | SIEMENS | auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW68 | INF | SOT23 | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW68 | NFINEON | 10+ SOT-23 | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW68/D6S | INF | auf Bestellung 2984 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW68E-6359 | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BCW68E6327 | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BCW68E6359HTMA1 | Infineon Technologies | Description: TRANSISTOR AF SOT23 Packaging: Tape & Reel (TR) Part Status: Last Time Buy | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68E6359HTMA1 | Infineon Technologies | BCW68E6359HTMA1 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68F | SMBT | auf Bestellung 342000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW68FE-6327DFs | INFINEON | 00+ SOT-23 | auf Bestellung 15100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW68FE6327 | INFINEON TECHNOLOGIES | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 200MHz | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68FE6327 | INFINEON TECHNOLOGIES | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 200MHz Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68FE6327/DF | INF | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW68FE6327HTSA1 | Infineon Technologies | Description: TRANS PNP 45V 0.8A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68FE6327HTSA1 | Infineon Technologies | Trans GP BJT PNP 45V 0.8A 330mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68FE6327HTSA1 | Infineon Technologies | Trans GP BJT PNP 45V 0.8A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68FE6327HTSA1 | Infineon Technologies | Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68FR | Nexperia | Trans GP BJT PNP 45V 0.8A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68FR | Nexperia | Bipolar Transistors - BJT BCW68F/SOT23/TO-236AB | auf Bestellung 3995 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW68FR | NEXPERIA | Description: NEXPERIA - BCW68FR - TRANSISTOR, BIPOLAR MSL: MSL 1 - unbegrenzt SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68FR | Nexperia USA Inc. | Description: TRANS PNP 45V 0.8A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 80MHz Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Qualification: AEC-Q101 | auf Bestellung 5890 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW68FR | Nexperia USA Inc. | Description: TRANS PNP 45V 0.8A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 80MHz Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW68FR | NEXPERIA | Trans GP BJT PNP 45V 0.8A 250mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68FVL | Nexperia | Trans GP BJT PNP 45V 0.8A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 6199 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW68FVL | NEXPERIA | Description: NEXPERIA - BCW68FVL - Bipolarer Einzeltransistor (BJT), PNP, 45 V, 800 mA, 250 mW, TO-236AB, Oberflächenmontage Transistormontage: Oberflächenmontage DC-Stromverstärkung hFE: 35 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 250 Übergangsfrequenz ft: 80 Bauform - Transistor: TO-236AB Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Kollektor-Emitter-Spannung V(br)ceo: 45 Anzahl der Pins: 3 Produktpalette: BCW68 Wandlerpolarität: PNP DC-Kollektorstrom: 800 Betriebstemperatur, max.: 150 SVHC: No SVHC (17-Jan-2022) | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW68FVL | Nexperia USA Inc. | Description: BCW68FSOT23TO-236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 80MHz Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Qualification: AEC-Q101 | auf Bestellung 9990 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW68FVL | NEXPERIA | Trans GP BJT PNP 45V 0.8A 250mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68FVL | Nexperia | Trans GP BJT PNP 45V 0.8A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68FVL | Nexperia | Bipolar Transistors - BJT BCW68F/SOT23/TO-236AB | auf Bestellung 9981 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW68FVL | Nexperia | Trans GP BJT PNP 45V 0.8A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 6199 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW68FVL | NEXPERIA | Description: NEXPERIA - BCW68FVL - Bipolarer Einzeltransistor (BJT), PNP, 45 V, 800 mA, 250 mW, TO-236AB, Oberflächenmontage Transistormontage: Oberflächenmontage DC-Stromverstärkung hFE: 35 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 250 Übergangsfrequenz ft: 80 Bauform - Transistor: TO-236AB Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Kollektor-Emitter-Spannung V(br)ceo: 45 Anzahl der Pins: 3 Produktpalette: BCW68 Wandlerpolarität: PNP DC-Kollektorstrom: 800 Betriebstemperatur, max.: 150 SVHC: No SVHC (17-Jan-2022) | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW68FVL | Nexperia USA Inc. | Description: BCW68FSOT23TO-236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 80MHz Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68G | ONSEMI | Description: ONSEMI - BCW68G - TRANSISTOR,PNP,45V,0.8A,SOT23 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 44530 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW68G | Fairchild Semiconductor | Description: TRANS PNP 45V 0.8A SOT23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 30mA, 300mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW | auf Bestellung 224660 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW68G | ON Semiconductor | Trans GP BJT PNP 45V 0.8A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68G | onsemi / Fairchild | Bipolar Transistors - BJT SOT-23 PNP GP AMP | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68G | onsemi | Description: TRANS PNP 45V 0.8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 30mA, 300mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68G | MULTICOMP PRO | Description: MULTICOMP PRO - BCW68G - Bipolarer Einzeltransistor (BJT), PNP, 45 V, 1 A, 330 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 250hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 1A MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 330mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter Kollektor-Emitter-Spannung, max.: 45V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: 200MHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) | auf Bestellung 5170 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW68G | onsemi | Description: TRANS PNP 45V 0.8A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 30mA, 300mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68G-ON | onsemi | Description: TRANS PNP 45V 0.8A SOT23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 30mA, 300mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW | auf Bestellung 44530 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW68G-TP | Micro Commercial Components | Trans GP BJT PNP 45V 0.8A 330mW 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW68G-TP | MICRO COMMERCIAL COMPONENTS | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.8A; 330mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.33W Case: SOT23 Pulsed collector current: 1A Current gain: 50...400 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Anzahl je Verpackung: 25 Stücke | auf Bestellung 2825 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW68G-TP | MICRO COMMERCIAL COMPONENTS | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.8A; 330mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.33W Case: SOT23 Pulsed collector current: 1A Current gain: 50...400 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz | auf Bestellung 2825 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW68G-TP | Micro Commercial Components | Trans GP BJT PNP 45V 0.8A 330mW 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW68G-TP | Micro Commercial Components | Trans GP BJT PNP 45V 0.8A 330mW 3-Pin SOT-23 T/R | auf Bestellung 117000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW68G-TP | Micro Commercial Co | Description: Interface Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68G-TP | Micro Commercial Components | Trans GP BJT PNP 45V 0.8A 330mW 3-Pin SOT-23 T/R | auf Bestellung 117000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW68G-TP | Micro Commercial Components | Trans GP BJT PNP 45V 0.8A 330mW 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW68G-TP | Micro Commercial Components (MCC) | Bipolar Transistors - BJT NPN Plastic-Encapsulate Transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68GE6327 | Infineon Technologies | Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT23-3-1 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68GE6327 | onsemi / Fairchild | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68GE6327 | Infineon | PNP 800mA 45V 225mW 100MHz BCW68GLT3G, BCW68GLT1G, BCW68GE6327HTSA1, BCW68GE6327, BCW68G BCW68G TBCW68g Anzahl je Verpackung: 100 Stücke | auf Bestellung 2000 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW68GE6327 Produktcode: 122761 | Infineon | Transistoren > Bipolar-Transistoren PNP Gehäuse: SOT-23 fT: 200 MHz U, V: 45 V U, V: 60 V I, А: 1 А h21,max: 400 | auf Bestellung 138 Stück: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW68GE6327HTSA1 | Infineon Technologies | Trans GP BJT PNP 45V 0.8A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW68GE6327HTSA1 | Infineon Technologies | Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68GE6327HTSA1 | Infineon Technologies | Description: TRANS PNP 45V 0.8A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68GE6327HTSA1 | Infineon | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCW68GE6327HTSA1 | Infineon Technologies | Trans GP BJT PNP 45V 0.8A 330mW Automotive 3-Pin SOT-23 T/R | auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW68GE6327HTSA1 | Infineon Technologies | Trans GP BJT PNP 45V 0.8A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW68GE6327HTSA1 | Infineon Technologies | Description: TRANS PNP 45V 0.8A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68GE6327HTSA1 | Infineon Technologies | Trans GP BJT PNP 45V 0.8A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68GLT1 | ONSEMI | Description: ONSEMI - BCW68GLT1 - TRANSISTOR, PNP SOT-23 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 108000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW68GLT1 | onsemi | Description: TRANS PNP GP 45V 800MA SOT-23 Packaging: Bulk Part Status: Obsolete | auf Bestellung 108000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW68GLT1 | auf Bestellung 4100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BCW68GLT1G | onsemi | Description: TRANS PNP 45V 0.8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 30mA, 300mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW | auf Bestellung 945 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW68GLT1G | ON Semiconductor | Trans GP BJT PNP 45V 0.8A 300mW 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68GLT1G | ON Semiconductor | Trans GP BJT PNP 45V 0.8A 300mW 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW68GLT1G | ONSEMI | Description: ONSEMI - BCW68GLT1G - Bipolarer Einzeltransistor (BJT), PNP, 45 V, 800 mA, 225 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 60hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 800mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 225mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter Kollektor-Emitter-Spannung, max.: 45V productTraceability: No Wandlerpolarität: PNP Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C | auf Bestellung 4285 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW68GLT1G | onsemi | Description: TRANS PNP 45V 0.8A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 30mA, 300mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68GLT1G | ONSEMI | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.3W Case: SOT23 Current gain: 120...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Anzahl je Verpackung: 25 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68GLT1G | ON Semiconductor | Trans GP BJT PNP 45V 0.8A 300mW 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68GLT1G | onsemi | Bipolar Transistors - BJT 100mA 60V PNP | auf Bestellung 6578 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW68GLT1G | ONSEMI | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.3W Case: SOT23 Current gain: 120...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68GLT1G | ON Semiconductor | Trans GP BJT PNP 45V 0.8A 300mW 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW68GLT1G | ONSEMI | Description: ONSEMI - BCW68GLT1G - Bipolarer Einzeltransistor (BJT), PNP, 45 V, 800 mA, 225 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 60hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 800mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 225mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter Kollektor-Emitter-Spannung, max.: 45V productTraceability: No Wandlerpolarität: PNP Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C | auf Bestellung 4285 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW68GLT1G | ON Semiconductor | Trans GP BJT PNP 45V 0.8A 300mW 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW68GLT3G | ONSEMI | Description: ONSEMI - BCW68GLT3G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 570000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW68GLT3G | ONSEMI | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.3W Case: SOT23 Current gain: 120...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68GLT3G | ON Semiconductor | Trans GP BJT PNP 45V 0.8A 300mW 3-Pin SOT-23 T/R | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW68GLT3G | onsemi | Description: TRANS PNP 45V 0.8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 30mA, 300mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW | auf Bestellung 15028 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW68GLT3G | onsemi | Bipolar Transistors - BJT GENRL TRANSISTOR | auf Bestellung 8434 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW68GLT3G | ONSEMI | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.3W Case: SOT23 Current gain: 120...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68GLT3G | ON Semiconductor | Trans GP BJT PNP 45V 0.8A 300mW 3-Pin SOT-23 T/R | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW68GLT3G | ON Semiconductor | Trans GP BJT PNP 45V 0.8A 300mW 3-Pin SOT-23 T/R | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW68GLT3G | onsemi | Description: TRANS PNP 45V 0.8A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 30mA, 300mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW68GLT3G | ON Semiconductor | Trans GP BJT PNP 45V 0.8A 300mW 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW68GLT3G | ON Semiconductor | Trans GP BJT PNP 45V 0.8A 300mW 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW68GR | NEXPERIA | Trans GP BJT PNP 45V 0.8A 250mW Automotive 3-Pin SOT-23 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW68GR | Nexperia | Trans GP BJT PNP 45V 0.8A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68GR | Nexperia USA Inc. | Description: TRANS PNP 45V 0.8A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 80MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2538 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW68GR | Nexperia | Trans GP BJT PNP 45V 0.8A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW68GR | NEXPERIA | Description: NEXPERIA - BCW68GR - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 99000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW68GR | NEXPERIA | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.8A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 1A Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 80MHz Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68GR | Nexperia USA Inc. | Description: TRANS PNP 45V 0.8A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 80MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68GR | Nexperia | Bipolar Transistors - BJT BCW68G/SOT23/TO-236AB | auf Bestellung 6826 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW68GR | NEXPERIA | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.8A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 1A Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 80MHz | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68GR | Nexperia | Trans GP BJT PNP 45V 0.8A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW68GTA | auf Bestellung 54000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BCW68GVL | Nexperia USA Inc. | Description: BCW68GSOT23TO-236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 80MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68GVL | Nexperia | Trans GP BJT PNP 45V 0.8A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68GVL | NEXPERIA | Description: NEXPERIA - BCW68GVL - Bipolarer Einzeltransistor (BJT), PNP, 45 V, 800 mA, 250 mW, TO-236AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 60hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 800mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: TO-236AB Anzahl der Pins: 3Pin(s) Produktpalette: BCW68 Kollektor-Emitter-Spannung, max.: 45V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: 80MHz Betriebstemperatur, max.: 150°C | auf Bestellung 6097 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW68GVL | NEXPERIA | Description: NEXPERIA - BCW68GVL - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 139960 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW68GVL | Nexperia | Bipolar Transistors - BJT BCW68G/SOT23/TO-236AB | auf Bestellung 11534 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW68GVL | Nexperia USA Inc. | Description: BCW68GSOT23TO-236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 80MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 12650 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW68GVL | NEXPERIA | Trans GP BJT PNP 45V 0.8A 250mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68GVL | Nexperia | Trans GP BJT PNP 45V 0.8A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68GVL | NEXPERIA | Description: NEXPERIA - BCW68GVL - Bipolarer Einzeltransistor (BJT), PNP, 45 V, 800 mA, 250 mW, TO-236AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 60hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 800mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: TO-236AB Anzahl der Pins: 3Pin(s) Produktpalette: BCW68 Kollektor-Emitter-Spannung, max.: 45V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: 80MHz Betriebstemperatur, max.: 150°C | auf Bestellung 6097 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW68G\GC | lnfineon | SOT-23 | auf Bestellung 3100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW68G_Q | onsemi / Fairchild | Bipolar Transistors - BJT SOT-23 PNP GP AMP | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68H | MULTICOMP PRO | Description: MULTICOMP PRO - BCW68H - Bipolarer Einzeltransistor (BJT), PNP, 45 V, 1 A, 330 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 350hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 1A MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 330mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 45V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: 200MHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW68H | ZETEX | 06+; | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW68H | infineon | 04+ SOT-23 | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW68H-TP | Micro Commercial Co | Description: Interface Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68H-TP | Micro Commercial Components | Trans GP BJT PNP 45V 0.8A 330mW 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68H-TP | Micro Commercial Components (MCC) | Bipolar Transistors - BJT PNP Plastic-Encapsulate Transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68H215 | Nexperia USA Inc. | Description: 45 V, 800MA PNP GENERAL-PURPOSE Packaging: Bulk Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68HE6327 | Infineon Technologies | Description: SMALL SIGNAL BIPOLAR TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68HE6327 | INFINEON TECHNOLOGIES | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 200MHz | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68HE6327 Produktcode: 118279 | Transistoren > Bipolar-Transistoren PNP | Produkt ist nicht verfügbar | ||||||||||||||||||||
BCW68HE6327 | Infineon | Транз. Бипол. ММ PNP SOT23 Uceo=45 V; Ic=0,8 A; f=200MHz; Pdmax=0,3 W; hfe=250 @ 100mA, 1V | auf Bestellung 2890 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW68HE6327HTSA1 | Infineon Technologies | Description: TRANS PNP 45V 0.8A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW | auf Bestellung 114000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW68HE6327HTSA1 | Infineon | PNP 800mA 45V 330mW 200MHz hfe250min (100mA) BCW68H smd TBCW68h Anzahl je Verpackung: 100 Stücke | auf Bestellung 2880 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW68HE6327HTSA1 | Infineon Technologies | Bipolar Transistors - BJT PNP 45 V 800 mA | auf Bestellung 15995 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW68HE6327HTSA1 | Infineon Technologies | Trans GP BJT PNP 45V 0.8A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 609000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW68HE6327HTSA1 | Infineon Technologies | Trans GP BJT PNP 45V 0.8A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68HE6327HTSA1 | Infineon Technologies | Trans GP BJT PNP 45V 0.8A 330mW Automotive 3-Pin SOT-23 T/R | auf Bestellung 609000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW68HE6327HTSA1 | Infineon Technologies | Description: TRANS PNP 45V 0.8A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW | auf Bestellung 117000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW68HE6327HTSA1 | Infineon Technologies | Trans GP BJT PNP 45V 0.8A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 609000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW68HE6327HTSA1 | Infineon Technologies | Trans GP BJT PNP 45V 0.8A 330mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68HE6327HTSA1 | Infineon Technologies | Trans GP BJT PNP 45V 0.8A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 210000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW68HQTA | Diodes Inc | Trans GP BJT PNP 45V 0.8A 350mW 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68HR | NEXPERIA | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.8A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 1A Current gain: 600 Mounting: SMD Kind of package: reel; tape Frequency: 80MHz | auf Bestellung 5825 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW68HR | Nexperia USA Inc. | Description: TRANS PNP 45V 0.8A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 80MHz Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68HR | NEXPERIA | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.8A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 1A Current gain: 600 Mounting: SMD Kind of package: reel; tape Frequency: 80MHz Anzahl je Verpackung: 5 Stücke | auf Bestellung 5825 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW68HR | Nexperia | Trans GP BJT PNP 45V 0.8A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68HR | NEXPERIA | Description: NEXPERIA - BCW68HR - TRANSISTOR, BIPOLAR MSL: MSL 1 - unbegrenzt SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68HR | NEXPERIA | Trans GP BJT PNP 45V 0.8A 250mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68HR | Nexperia USA Inc. | Description: TRANS PNP 45V 0.8A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 80MHz Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Qualification: AEC-Q101 | auf Bestellung 2924 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW68HR | Nexperia Inc. | Trans GP BJT PNP 45V 0.8A 250mW Automotive 3-Pin TO-236AB | auf Bestellung 265 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW68HR | Nexperia | Bipolar Transistors - BJT BCW68H/SOT23/TO-236AB | auf Bestellung 11926 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW68HR | Nexperia | Trans GP BJT PNP 45V 0.8A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68HTA | DIODES INCORPORATED | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.31W Case: SOT23 Current gain: 250...630 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Anzahl je Verpackung: 5 Stücke | auf Bestellung 5180 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW68HTA | Diodes Zetex | Trans GP BJT PNP 45V 0.8A 350mW 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68HTA | DIODES INC. | Description: DIODES INC. - BCW68HTA - Bipolarer Einzeltransistor (BJT), Universal, PNP, 45 V, 500 mA, 330 mW, SOT-23, Oberflächenmontage Transistormontage: Oberflächenmontage DC-Stromverstärkung hFE: 350 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 330 Übergangsfrequenz ft: 100 Bauform - Transistor: SOT-23 Kollektor-Emitter-Spannung V(br)ceo: 45 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: PNP DC-Kollektorstrom: 500 Betriebstemperatur, max.: 150 SVHC: No SVHC (08-Jul-2021) | auf Bestellung 4399 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW68HTA | Diodes Zetex | Trans GP BJT PNP 45V 0.8A 350mW 3-Pin SOT-23 T/R | auf Bestellung 2978 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW68HTA | Diodes Inc | Trans GP BJT PNP 45V 0.8A 350mW 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW68HTA | Diodes Incorporated | Description: TRANS PNP 45V 0.8A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW | auf Bestellung 45000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW68HTA | Diodes Incorporated | Bipolar Transistors - BJT PNP Low Saturation | auf Bestellung 86182 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW68HTA | Diodes Zetex | Trans GP BJT PNP 45V 0.8A 350mW 3-Pin SOT-23 T/R | auf Bestellung 2978 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW68HTA | DIODES INCORPORATED | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.31W Case: SOT23 Current gain: 250...630 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz | auf Bestellung 5180 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW68HTA | Diodes Zetex | Trans GP BJT PNP 45V 0.8A 350mW 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW68HTA | DIODES INC. | Description: DIODES INC. - BCW68HTA - Bipolarer Einzeltransistor (BJT), Universal, PNP, 45 V, 500 mA, 330 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 350 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 500 usEccn: EAR99 euEccn: NLR Verlustleistung: 330 Kollektor-Emitter-Spannung, max.: 45 productTraceability: Yes-Date/Lot Code SVHC: No SVHC (17-Jan-2023) | auf Bestellung 4399 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW68HTA | Diodes Incorporated | Description: TRANS PNP 45V 0.8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW | auf Bestellung 52824 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW68HTC | Diodes Incorporated | Description: TRANS PNP 45V 0.8A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68HVL | NEXPERIA | Description: NEXPERIA - BCW68HVL - Bipolarer Einzeltransistor (BJT), PNP, 45 V, 800 mA, 250 mW, TO-236AB, Oberflächenmontage Transistormontage: Oberflächenmontage DC-Stromverstärkung hFE: 100 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 250 Übergangsfrequenz ft: 80 Bauform - Transistor: TO-236AB Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Kollektor-Emitter-Spannung V(br)ceo: 45 Anzahl der Pins: 3 Produktpalette: BCW68 Wandlerpolarität: PNP DC-Kollektorstrom: 800 Betriebstemperatur, max.: 150 SVHC: No SVHC (17-Jan-2022) | auf Bestellung 10175 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW68HVL | Nexperia | Bipolar Transistors - BJT BCW68H/SOT23/TO-236AB | auf Bestellung 114877 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW68HVL | Nexperia USA Inc. | Description: BCW68HSOT23TO-236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 80MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW68HVL | Nexperia | Trans GP BJT PNP 45V 0.8A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW68HVL | NEXPERIA | Description: NEXPERIA - BCW68HVL - Bipolarer Einzeltransistor (BJT), PNP, 45 V, 800 mA, 250 mW, TO-236AB, Oberflächenmontage Transistormontage: Oberflächenmontage DC-Stromverstärkung hFE: 100 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 250 Übergangsfrequenz ft: 80 Bauform - Transistor: TO-236AB Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Kollektor-Emitter-Spannung V(br)ceo: 45 Anzahl der Pins: 3 Produktpalette: BCW68 Wandlerpolarität: PNP DC-Kollektorstrom: 800 Betriebstemperatur, max.: 150 SVHC: No SVHC (17-Jan-2022) | auf Bestellung 10175 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW68HVL | Nexperia USA Inc. | Description: BCW68HSOT23TO-236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 80MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 36533 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW68HVL | NEXPERIA | Trans GP BJT PNP 45V 0.8A 250mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW69 | onsemi | Description: TRANS PNP 45V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW69 | ON Semiconductor | Trans GP BJT PNP 45V 0.1A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW69 | onsemi / Fairchild | Bipolar Transistors - BJT SOT-23 PNP GP AMP | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW69,215 | Nexperia | Trans GP BJT PNP 45V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW69,215 | NEXPERIA | Trans GP BJT PNP 45V 0.1A 250mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW69,215 Produktcode: 178297 | Transistoren > Bipolar-Transistoren PNP | Produkt ist nicht verfügbar | ||||||||||||||||||||
BCW69,215 | NEXPERIA | Description: NEXPERIA - BCW69,215 - Bipolarer Einzeltransistor (BJT), PNP, -45 V, -100 mA, 250 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 260hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: -100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: -45V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C | auf Bestellung 243 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW69,215 | NXP/Nexperia/We-En | Транзистор PNP; Ptot, Вт = 0,25; Uceo, В = 45; Ic = 100 мА; Тип монт. = smd; ft, МГц = 100; hFE = 120 @ 2 мA, 5 В; Icutoff-max = 100 нА; Uceo(sat), В @ Ic, Ib = 0,15 @ 2,5 мA, 50 мА; Тексп, °С = -65...+150; SOT-23-3 | auf Bestellung 264 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW69,215 | Nexperia | Bipolar Transistors - BJT BCW69/SOT23/TO-236AB | auf Bestellung 8224 Stücke: Lieferzeit 14-28 Tag (e) |
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BCW69,215 | NEXPERIA | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 90...260 Mounting: SMD Kind of package: reel; tape | auf Bestellung 289 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW69,215 | Nexperia USA Inc. | Description: TRANS PNP 45V 0.1A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Qualification: AEC-Q101 | auf Bestellung 41338 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW69,215 | NEXPERIA | Description: NEXPERIA - BCW69,215 - Bipolarer Einzeltransistor (BJT), PNP, -45 V, -100 mA, 250 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 260hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: -100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: -45V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C | auf Bestellung 243 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW69,215 | NEXPERIA | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 90...260 Mounting: SMD Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke | auf Bestellung 289 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW69,215 | NEXPERIA | Description: NEXPERIA - BCW69,215 - Bipolarer Einzeltransistor (BJT), PNP, 45 V, 100 mA, 250 mW, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 260hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 100mA usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler Kollektor-Emitter-Spannung, max.: 45V productTraceability: No Wandlerpolarität: PNP Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW69,215 | Nexperia USA Inc. | Description: TRANS PNP 45V 0.1A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Qualification: AEC-Q101 | auf Bestellung 39000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW69_Q | onsemi / Fairchild | Bipolar Transistors - BJT SOT-23 PNP GP AMP | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW70 | Philips | Транз. Бипол. ММ PNP SOT23 Uceo=-45V; Ic=-0,1A; f=100MHz; Pdmax=0,25W; hfe=215/500 | auf Bestellung 3810 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW70 | Nexperia | Nexperia | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW70 | KEC | SOT-23 | auf Bestellung 60000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCW70 (Transistor) Produktcode: 46417 | Verschiedene Bauteile > Verschiedene Bauteile 2 № 3: 8541290090 | Produkt ist nicht verfügbar | ||||||||||||||||||||
BCW70 /T3 | STMicroelectronics | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW70 T/R | onsemi / Fairchild | Bipolar Transistors - BJT | Produkt ist nicht verfügbar | |||||||||||||||||||
BCW70,215 | NEXPERIA | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 90...500 Mounting: SMD Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke | auf Bestellung 2150 Stücke: Lieferzeit 7-14 Tag (e) |
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BCW70,215 | Nexperia USA Inc. | Description: TRANS PNP 45V 0.1A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCW70,215 | NXP | Description: NXP - BCW70,215 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2650 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCW70,215 | Nexperia | Bipolar Transistors - BJT BCW70/SOT23/TO-236AB | auf Bestellung 10012 Stücke: Lieferzeit 14-28 Tag (e) |
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