Produkte > IPI

Description: MOSFET N-CH 60V 29A TO262-3

auf Bestellung 33 Stücke:

Lieferzeit 21-28 Tag (e)

IPI020N06NAKSA1

Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-262 Tube

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IPI020N06NAKSA1

Description: MOSFET N-CH 60V 29A/120A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 143µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 30 V

Produkt ist nicht verfügbar

IPI020N06NAKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhanced

Produkt ist nicht verfügbar

IPI020N06NAKSA1

MOSFET N-Ch 60V 120A I2PAK-3

auf Bestellung 491 Stücke:

Lieferzeit 14-28 Tag (e)

IPI020N06NAKSA1

Produkt ist nicht verfügbar

IPI023NE7N3 G

MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3

Produkt ist nicht verfügbar

IPI023NE7N3 G

Description: MOSFET N-CH 75V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 273µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V

Produkt ist nicht verfügbar

IPI023NE7N3G

Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 273µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V

auf Bestellung 5746 Stücke:

Lieferzeit 21-28 Tag (e)

143+	5.49 EUR

Mindestbestellmenge: 143

IPI023NE7N3GAKSA1

Trans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI024N06N3 G

MOSFET N-Ch 60V 120A I2PAK-3 OptiMOS 3

Produkt ist nicht verfügbar

IPI024N06N3 G E8174

MOSFET

Produkt ist nicht verfügbar

IPI024N06N3GHKSA1

Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI024N06N3GHKSA1

MOSFET MV POWER MOS

Produkt ist nicht verfügbar

IPI024N06N3GHKSA1

Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V

Produkt ist nicht verfügbar

IPI024N06N3GXKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

Produkt ist nicht verfügbar

IPI024N06N3GXKSA1

Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 23500 Stücke:

Lieferzeit 14-21 Tag (e)

500+	2.46 EUR

Mindestbestellmenge: 500

IPI024N06N3GXKSA1

MOSFET N-Ch 60V 120A I2PAK-3

auf Bestellung 480 Stücke:

Lieferzeit 14-28 Tag (e)

7+	7.57 EUR
10+	6.37 EUR
25+	4.29 EUR
100+	4.19 EUR
500+	4.16 EUR
1000+	3.69 EUR

Mindestbestellmenge: 7

IPI024N06N3GXKSA1

Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V

Produkt ist nicht verfügbar

IPI024N06N3GXKSA1

Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI024N06N3GXKSA1

Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI024N06N3GXKSA1

Produkt ist nicht verfügbar

IPI028N08N3GHKSA1

Description: MOSFET N-CH 80V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 270µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V

Produkt ist nicht verfügbar

IPI029N06N

MOSFET N-Ch 60V 100A I2PAK-3

auf Bestellung 227 Stücke:

Lieferzeit 14-28 Tag (e)

10+	5.41 EUR
12+	4.5 EUR
100+	3.59 EUR
250+	3.41 EUR
500+	2.89 EUR
1000+	2.56 EUR
2500+	2.42 EUR

Mindestbestellmenge: 10

IPI029N06NAKSA1

Description: INFINEON - IPI029N06NAKSA1 - Leistungs-MOSFET, n-Kanal, 60 V, 100 A, 0.0027 ohm, TO-262, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 10V
euEccn: NLR
Verlustleistung: 136W
Bauform - Transistor: TO-262
Anzahl der Pins: 3Pin(s)
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 2.8V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0027ohm

auf Bestellung 444 Stücke:

Lieferzeit 14-21 Tag (e)

IPI029N06NAKSA1

Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 11500 Stücke:

Lieferzeit 14-21 Tag (e)

500+	1.58 EUR

Mindestbestellmenge: 500

IPI029N06NAKSA1

Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI029N06NAKSA1

Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 499 Stücke:

Lieferzeit 14-21 Tag (e)

IPI029N06NAKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: THT
Kind of channel: enhanced

Produkt ist nicht verfügbar

IPI029N06NAKSA1

MOSFET N-Ch 60V 100A I2PAK-3

auf Bestellung 154 Stücke:

Lieferzeit 14-28 Tag (e)

10+	5.41 EUR
12+	4.5 EUR
100+	3.98 EUR
250+	3.59 EUR
500+	2.94 EUR
1000+	2.42 EUR
2500+	2.41 EUR

Mindestbestellmenge: 10

IPI029N06NAKSA1

Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 496 Stücke:

Lieferzeit 14-21 Tag (e)

63+	2.52 EUR
72+	2.12 EUR
100+	1.72 EUR
250+	1.61 EUR

Mindestbestellmenge: 63

IPI029N06NAKSA1

Produkt ist nicht verfügbar

IPI029N06NAKSA1

Description: MOSFET N-CH 60V 24A/100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 75µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V

auf Bestellung 61 Stücke:

Lieferzeit 21-28 Tag (e)

5+	5.33 EUR
10+	4.42 EUR

Mindestbestellmenge: 5

IPI029N06NAKSA1

Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 499 Stücke:

Lieferzeit 14-21 Tag (e)

57+	2.76 EUR
66+	2.32 EUR
100+	1.88 EUR
250+	1.76 EUR

Mindestbestellmenge: 57

IPI029N06NAKSA1

Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 500 Stücke:

Lieferzeit 14-21 Tag (e)

46+	3.43 EUR
57+	2.67 EUR
100+	2.4 EUR
200+	2.29 EUR
500+	1.96 EUR

Mindestbestellmenge: 46

IPI030N10N3 G

Trans MOSFET N-CH 100V 100A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI030N10N3 G

MOSFET N-Ch 100V 100A I2PAK-3 OptiMOS 3

Produkt ist nicht verfügbar

IPI030N10N3GHKSA1

Description: MOSFET N-CH 100V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V

Produkt ist nicht verfügbar

IPI030N10N3GHKSA1

Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI030N10N3GXKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhanced

Produkt ist nicht verfügbar

IPI030N10N3GXKSA1

Trans MOSFET N-CH 100V 100A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI030N10N3GXKSA1

Produkt ist nicht verfügbar

IPI030N10N3GXKSA1

MOSFET N-Ch 100V 100A I2PAK-3

auf Bestellung 14 Stücke:

Lieferzeit 14-28 Tag (e)

3+	19.29 EUR
10+	17.37 EUR
100+	14.2 EUR

Mindestbestellmenge: 3

IPI030N10N3GXKSA1

Produkt ist nicht verfügbar

IPI032N06N3 G
Produktcode: 110398

Transistoren > MOSFET N-CH

Produkt ist nicht verfügbar

IPI032N06N3 G

MOSFET N-Ch 60V 120A I2PAK-3 OptiMOS 3

auf Bestellung 6 Stücke:

Lieferzeit 14-28 Tag (e)

8+	7.12 EUR
10+	6.4 EUR
100+	5.25 EUR
500+	4.45 EUR
1000+	3.74 EUR
2500+	3.56 EUR
5000+	3.41 EUR

Mindestbestellmenge: 8

IPI032N06N3 G

Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V

Produkt ist nicht verfügbar

IPI032N06N3GAKSA1

Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO262-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V

Produkt ist nicht verfügbar

IPI032N06N3GAKSA1

Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI032N06N3GAKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Kind of channel: enhanced

Produkt ist nicht verfügbar

IPI032N06N3GAKSA1

Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V

auf Bestellung 865 Stücke:

Lieferzeit 21-28 Tag (e)

192+	3.77 EUR

Mindestbestellmenge: 192

IPI032N06N3GAKSA1

Produkt ist nicht verfügbar

IPI032N06N3GAKSA1

MOSFET N-Ch 60V 120A I2PAK-3 OptiMOS 3

auf Bestellung 469 Stücke:

Lieferzeit 14-28 Tag (e)

8+	7.12 EUR
10+	6.4 EUR
100+	5.25 EUR
500+	4.16 EUR
1000+	3.67 EUR
2500+	3.59 EUR
5000+	3.51 EUR

Mindestbestellmenge: 8

IPI032N06N3GE8214AKSA1

Description: MOSFET N-CH 60V TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V

Produkt ist nicht verfügbar

IPI034NE7N3 G

MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3

auf Bestellung 488 Stücke:

Lieferzeit 14-28 Tag (e)

IPI034NE7N3 G

Description: MOSFET N-CH 75V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 155µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 37.5 V

Produkt ist nicht verfügbar

IPI034NE7N3G

Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 155µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 37.5 V

auf Bestellung 5434 Stücke:

Lieferzeit 21-28 Tag (e)

262+	2.99 EUR

Mindestbestellmenge: 262

IPI034NE7N3GAKSA1

Trans MOSFET N-CH 75V 100A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI037N06L3GHKSA1

Description: MOSFET N-CH 60V 90A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 93µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V

Produkt ist nicht verfügbar

IPI037N06L3GXK

Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI037N08N3 G

Trans MOSFET N-CH 80V 100A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI037N08N3 G E8174

MOSFET

Produkt ist nicht verfügbar

IPI037N08N3GHKSA1

Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI037N08N3GHKSA1

Description: MOSFET N-CH 80V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.75mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 155µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V

Produkt ist nicht verfügbar

IPI037N08N3GXKSA1

Description: MOSFET N-CH 80V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.75mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 155µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V

Produkt ist nicht verfügbar

IPI037N08N3GXKSA1

MOSFET N-Ch 80V 100A I2PAK-3

auf Bestellung 500 Stücke:

Lieferzeit 14-28 Tag (e)

IPI03N03LA

Description: MOSFET N-CH 25V 80A TO262-3

Produkt ist nicht verfügbar

IPI040N06N3GHKSA1

Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI040N06N3GHKSA1

Description: MOSFET N-CH 60V 90A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V

Produkt ist nicht verfügbar

IPI040N06N3GXKSA1

Description: MOSFET N-CH 60V 90A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V

auf Bestellung 500 Stücke:

Lieferzeit 21-28 Tag (e)

5+	5.2 EUR
10+	4.33 EUR
100+	3.45 EUR
500+	2.92 EUR

Mindestbestellmenge: 5

IPI040N06N3GXKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhanced

auf Bestellung 483 Stücke:

Lieferzeit 14-21 Tag (e)

49+	1.47 EUR
55+	1.3 EUR
62+	1.16 EUR
66+	1.09 EUR
71+	1.02 EUR
250+	0.99 EUR

Mindestbestellmenge: 49

IPI040N06N3GXKSA1

MOSFET N-Ch 60V 90A I2PAK-3

auf Bestellung 500 Stücke:

Lieferzeit 14-28 Tag (e)

10+	5.25 EUR
12+	4.34 EUR
100+	3.48 EUR
250+	3.33 EUR
500+	2.91 EUR
1000+	2.37 EUR
5000+	2.29 EUR

Mindestbestellmenge: 10

IPI040N06N3GXKSA1

auf Bestellung 483 Stücke:

Lieferzeit 7-14 Tag (e)

49+	1.47 EUR
55+	1.3 EUR
62+	1.16 EUR
66+	1.09 EUR
71+	1.02 EUR
250+	0.99 EUR

Mindestbestellmenge: 49

IPI040N06N3GXKSA1

Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 500 Stücke:

Lieferzeit 14-21 Tag (e)

IPI040N06N3GXKSA1

Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI041N12N3 G

MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3

auf Bestellung 500 Stücke:

Lieferzeit 14-28 Tag (e)

4+	14.77 EUR
10+	12.43 EUR
25+	11.73 EUR
100+	10.06 EUR
250+	9.49 EUR
500+	8.89 EUR
1000+	7.62 EUR

Mindestbestellmenge: 4

IPI041N12N3G

Description: IPI041N12 - 12V-300V N-CHANNEL P

auf Bestellung 493 Stücke:

Lieferzeit 21-28 Tag (e)

IPI041N12N3GAKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

Produkt ist nicht verfügbar

IPI041N12N3GAKSA1

Trans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 28500 Stücke:

Lieferzeit 14-21 Tag (e)

500+	4.79 EUR

Mindestbestellmenge: 500

IPI041N12N3GAKSA1

Description: MOSFET N-CH 120V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V

auf Bestellung 500 Stücke:

Lieferzeit 21-28 Tag (e)

2+	14.53 EUR
10+	12.2 EUR
100+	9.87 EUR
500+	8.78 EUR

Mindestbestellmenge: 2

IPI041N12N3GAKSA1

MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3

Produkt ist nicht verfügbar

IPI041N12N3GAKSA1

Trans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 430 Stücke:

Lieferzeit 14-21 Tag (e)

17+	9.34 EUR
21+	7.53 EUR
100+	5.84 EUR

Mindestbestellmenge: 17

IPI041N12N3GAKSA1

Trans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 430 Stücke:

Lieferzeit 14-21 Tag (e)

17+	9.34 EUR
21+	7.53 EUR
100+	5.84 EUR

Mindestbestellmenge: 17

IPI041N12N3GAKSA1

Produkt ist nicht verfügbar

IPI045N10N3 G

MOSFET N-Ch 100V 100A I2PAK-3 OptiMOS 3

auf Bestellung 501 Stücke:

Lieferzeit 14-28 Tag (e)

6+	9.07 EUR
10+	7.62 EUR
25+	7.18 EUR
100+	6.16 EUR
250+	5.82 EUR
500+	5.41 EUR
1000+	4.86 EUR

Mindestbestellmenge: 6

IPI045N10N3 G

Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 137A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V

Produkt ist nicht verfügbar

IPI045N10N3GXK

Description: MOSFET N-CH 100V 137A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 137A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V

Produkt ist nicht verfügbar

IPI045N10N3GXKSA1

Description: MOSFET N-CH 100V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V

auf Bestellung 459 Stücke:

Lieferzeit 21-28 Tag (e)

3+	9.02 EUR
50+	7.15 EUR
100+	6.13 EUR

Mindestbestellmenge: 3

IPI045N10N3GXKSA1

Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI045N10N3GXKSA1

Trans MOSFET N-CH 100V 100A Automotive 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 500 Stücke:

Lieferzeit 14-21 Tag (e)

IPI045N10N3GXKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of channel: enhanced

Produkt ist nicht verfügbar

IPI045N10N3GXKSA1

Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 470 Stücke:

Lieferzeit 14-21 Tag (e)

27+	5.79 EUR
31+	4.98 EUR
100+	3.92 EUR

Mindestbestellmenge: 27

IPI045N10N3GXKSA1

Produkt ist nicht verfügbar

IPI045N10N3GXKSA1

MOSFET N-Ch 100V 100A I2PAK-3 OptiMOS 3

Produkt ist nicht verfügbar

IPI045N10N3GXKSA1

Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 470 Stücke:

Lieferzeit 14-21 Tag (e)

30+	5.28 EUR
34+	4.55 EUR
100+	3.57 EUR

Mindestbestellmenge: 30

IPI04CN10N G

Description: MOSFET N-CH 100V 100A TO262-3

Produkt ist nicht verfügbar

IPI04N03LA

Description: MOSFET N-CH 25V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 55A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 60µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3877 pF @ 15 V

Produkt ist nicht verfügbar

IPI051N15N5AKSA1

Trans MOSFET N-CH 150V 120A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI051N15N5AKSA1

MOSFET TRENCH >=100V

auf Bestellung 500 Stücke:

Lieferzeit 14-28 Tag (e)

3+	18.62 EUR
10+	15.96 EUR
25+	14.48 EUR
100+	13.31 EUR
250+	12.53 EUR
500+	11.7 EUR
1000+	10.53 EUR

Mindestbestellmenge: 3

IPI051N15N5AKSA1

Description: MV POWER MOS
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 264µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 75 V

Produkt ist nicht verfügbar

IPI051N15N5AKSA1

150V N-Channel MOSFET

Produkt ist nicht verfügbar

IPI052NE7N3 G

Description: MOSFET N-CH 75V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 37.5 V

Produkt ist nicht verfügbar

IPI052NE7N3 G

MOSFET N-Ch 75V 80A I2PAK-3 OptiMOS 3

Produkt ist nicht verfügbar

IPI052NE7N3G

Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 37.5 V

auf Bestellung 396 Stücke:

Lieferzeit 21-28 Tag (e)

396+	1.97 EUR

Mindestbestellmenge: 396

IPI052NE7N3GAKSA1

Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI057N08N3 G

Description: MOSFET N-CH 80V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 40 V

Produkt ist nicht verfügbar

IPI057N08N3GXKSA1

Trans MOSFET N-CH 80V 80A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI05CN10N G

Description: MOSFET N-CH 100V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V

Produkt ist nicht verfügbar

IPI05N03LA

Description: MOSFET N-CH 25V 80A TO262-3

Produkt ist nicht verfügbar

IPI06CN10N G

Description: MOSFET N-CH 100V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V

Produkt ist nicht verfügbar

IPI06N03LA

MOSFET N-Channel MOSFETs (20 V to 300 V) OptiMOS

Produkt ist nicht verfügbar

IPI06N03LA

Description: MOSFET N-CH 25V 50A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V

Produkt ist nicht verfügbar

IPI070N06N G

Description: MOSFET N-CH 60V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 80A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO262-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V

Produkt ist nicht verfügbar

IPI070N06NG

MOSFET N-KANAL POWER MOS

Produkt ist nicht verfügbar

IPI070N08N3 G

Description: MOSFET N-CH 80V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 73A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V

Produkt ist nicht verfügbar

IPI072N10N3 G

MOSFET N-Ch 100V 80A I2PAK-3 OptiMOS 3

auf Bestellung 292 Stücke:

Lieferzeit 14-28 Tag (e)

7+	8.11 EUR
10+	7.28 EUR
100+	5.95 EUR
500+	5.1 EUR

Mindestbestellmenge: 7

IPI072N10N3 G

Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V

auf Bestellung 1000 Stücke:

Lieferzeit 21-28 Tag (e)

202+	3.87 EUR

Mindestbestellmenge: 202

IPI072N10N3 G

Trans MOSFET N-CH 100V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI072N10N3G

Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V

auf Bestellung 11000 Stücke:

Lieferzeit 21-28 Tag (e)

313+	2.5 EUR

Mindestbestellmenge: 313

IPI072N10N3GXK

Description: MOSFET N-CH 100V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V

Produkt ist nicht verfügbar

IPI072N10N3GXKSA1

Description: MOSFET N-CH 100V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO262-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V

Produkt ist nicht verfügbar

IPI075N15N3

Description: N-CHANNEL POWER MOSFET

Produkt ist nicht verfügbar

IPI075N15N3 G

08+ PLUS26..

auf Bestellung 250 Stücke:

Lieferzeit 21-28 Tag (e)

IPI075N15N3G

Description: OPTLMOS N-CHANNEL POWER MOSFET

Produkt ist nicht verfügbar

IPI075N15N3G

Infineon technologies

auf Bestellung 30 Stücke:

Lieferzeit 21-28 Tag (e)

IPI075N15N3GHKSA1

Description: MOSFET N-CH 150V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5470 pF @ 75 V

Produkt ist nicht verfügbar

IPI075N15N3GHKSA1

Trans MOSFET N-CH 150V 100A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI075N15N3GXKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: THT
Kind of channel: enhanced

Produkt ist nicht verfügbar

IPI075N15N3GXKSA1

MOSFET TRENCH >=100V

auf Bestellung 207 Stücke:

Lieferzeit 14-28 Tag (e)

4+	16.15 EUR
10+	14.48 EUR
25+	10.5 EUR
100+	9.57 EUR
250+	9.54 EUR
500+	9.52 EUR
1000+	7.85 EUR

Mindestbestellmenge: 4

IPI075N15N3GXKSA1

Trans MOSFET N-CH 150V 100A 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 648 Stücke:

Lieferzeit 14-21 Tag (e)

21+	7.56 EUR
24+	6.36 EUR
100+	5.16 EUR
500+	4.47 EUR

Mindestbestellmenge: 21

IPI075N15N3GXKSA1

Produkt ist nicht verfügbar

IPI075N15N3GXKSA1

Trans MOSFET N-CH 150V 100A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI075N15N3GXKSA1

Trans MOSFET N-CH 150V 100A 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 394000 Stücke:

Lieferzeit 14-21 Tag (e)

500+	5.23 EUR

Mindestbestellmenge: 500

IPI075N15N3GXKSA1

Description: MOSFET N-CH 150V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5470 pF @ 75 V

auf Bestellung 498 Stücke:

Lieferzeit 21-28 Tag (e)

2+	16.04 EUR
50+	12.72 EUR
100+	10.9 EUR

Mindestbestellmenge: 2

IPI075N15N3GXKSA1

Trans MOSFET N-CH 150V 100A 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 650 Stücke:

Lieferzeit 14-21 Tag (e)

19+	8.28 EUR
22+	6.97 EUR
100+	5.65 EUR
500+	4.9 EUR

Mindestbestellmenge: 19

IPI075N15N3GXKSA1

Trans MOSFET N-CH 150V 100A Automotive 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 650 Stücke:

Lieferzeit 14-21 Tag (e)

IPI076N12N3 G

MOSFET N-Ch 120V 100A I2PAK-3 OptiMOS 3

Produkt ist nicht verfügbar

IPI076N12N3GAKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 100A; 168W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 100A
Power dissipation: 168W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 50 Stücke

Produkt ist nicht verfügbar

IPI076N12N3GAKSA1

Trans MOSFET N-CH 120V 100A 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 500 Stücke:

Lieferzeit 14-21 Tag (e)

34+	4.61 EUR
38+	3.97 EUR
100+	3.12 EUR
500+	2.54 EUR

Mindestbestellmenge: 34

IPI076N12N3GAKSA1

Trans MOSFET N-CH 120V 100A 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 500 Stücke:

Lieferzeit 14-21 Tag (e)

31+	5.05 EUR
35+	4.35 EUR
100+	3.42 EUR
500+	2.78 EUR

Mindestbestellmenge: 31

IPI076N12N3GAKSA1

Description: MOSFET N-CH 120V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 60 V

auf Bestellung 498 Stücke:

Lieferzeit 21-28 Tag (e)

4+	7.8 EUR
10+	6.56 EUR
100+	5.31 EUR

Mindestbestellmenge: 4

IPI076N12N3GAKSA1

Trans MOSFET N-CH 120V 100A Automotive 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 500 Stücke:

Lieferzeit 14-21 Tag (e)

IPI076N12N3GAKSA1

Produkt ist nicht verfügbar

IPI076N12N3GAKSA1

Trans MOSFET N-CH 120V 100A 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 500 Stücke:

Lieferzeit 14-21 Tag (e)

500+	2.57 EUR

Mindestbestellmenge: 500

IPI076N12N3GAKSA1

Trans MOSFET N-CH 120V 100A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI076N15N5AKSA1

Trans MOSFET N-CH 150V 112A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI076N15N5AKSA1

Description: MV POWER MOS
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 56A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 160µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V

auf Bestellung 455 Stücke:

Lieferzeit 21-28 Tag (e)

2+	13.03 EUR
50+	10.33 EUR
100+	8.85 EUR

Mindestbestellmenge: 2

IPI076N15N5AKSA1

Trans MOSFET N-CH 150V 112A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI076N15N5AKSA1

MOSFET TRENCH >=100V

auf Bestellung 500 Stücke:

Lieferzeit 310-324 Tag (e)

4+	13.31 EUR
10+	11.34 EUR
25+	11.02 EUR
100+	9.18 EUR
250+	8.92 EUR
500+	7.93 EUR

Mindestbestellmenge: 4

IPI076N15N5AKSA1

Trans MOSFET N-CH 150V 112A 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 6500 Stücke:

Lieferzeit 14-21 Tag (e)

500+	5.1 EUR

Mindestbestellmenge: 500

IPI076N15N5AKSA1

Description: INFINEON - IPI076N15N5AKSA1 - Leistungs-MOSFET, n-Kanal, 150 V, 112 A, 0.0059 ohm, TO-262, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 150V
rohsCompliant: YES
Dauer-Drainstrom Id: 112A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.8V
euEccn: NLR
Verlustleistung: 214W
Bauform - Transistor: TO-262
Anzahl der Pins: 3Pin(s)
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0059ohm

auf Bestellung 986 Stücke:

Lieferzeit 14-21 Tag (e)

IPI084N06L3 G

MOSFET N-Ch 60V 50A I2PAK-3

auf Bestellung 236 Stücke:

Lieferzeit 14-28 Tag (e)

IPI084N06L3GXKSA1

Description: MOSFET N-CH 60V 50A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V

auf Bestellung 1027 Stücke:

Lieferzeit 21-28 Tag (e)

594+	1.22 EUR

Mindestbestellmenge: 594

IPI084N06L3GXKSA1

MOSFET N-Ch 60V 50A I2PAK-3

auf Bestellung 1000 Stücke:

Lieferzeit 14-28 Tag (e)

IPI084N06L3GXKSA1

Description: MOSFET N-CH 60V 50A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V

Produkt ist nicht verfügbar

IPI086N10N3 G

MOSFET N-Ch 100V 80A I2PAK-3 OptiMOS 3

auf Bestellung 3 Stücke:

Lieferzeit 14-28 Tag (e)

13+	4.26 EUR
16+	3.38 EUR
100+	2.73 EUR
250+	2.56 EUR
500+	2.3 EUR
1000+	1.99 EUR
2500+	1.85 EUR

Mindestbestellmenge: 13

IPI086N10N3GXKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Kind of channel: enhanced

Produkt ist nicht verfügbar

IPI086N10N3GXKSA1

Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 200 Stücke:

Lieferzeit 14-21 Tag (e)

72+	2.17 EUR
79+	1.92 EUR
100+	1.5 EUR
200+	1.35 EUR

Mindestbestellmenge: 72

IPI086N10N3GXKSA1

Description: INFINEON - IPI086N10N3GXKSA1 - Leistungs-MOSFET, n-Kanal, 100 V, 80 A, 0.0074 ohm, TO-262, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 80A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.7V
euEccn: NLR
Verlustleistung: 125W
Bauform - Transistor: TO-262
Anzahl der Pins: 3Pin(s)
Produktpalette: OptiMOS 3
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0074ohm

auf Bestellung 162 Stücke:

Lieferzeit 14-21 Tag (e)

IPI086N10N3GXKSA1

Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI086N10N3GXKSA1

Produkt ist nicht verfügbar

IPI086N10N3GXKSA1

Trans MOSFET N-CH 100V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI086N10N3GXKSA1

Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 22500 Stücke:

Lieferzeit 14-21 Tag (e)

500+	1.23 EUR

Mindestbestellmenge: 500

IPI086N10N3GXKSA1

MOSFET TRENCH >=100V

Produkt ist nicht verfügbar

IPI086N10N3GXKSA1

Description: MOSFET N-CH 100V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 73A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 75µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 50 V

auf Bestellung 270 Stücke:

Lieferzeit 21-28 Tag (e)

7+	4.21 EUR
50+	3.38 EUR
100+	2.78 EUR

Mindestbestellmenge: 7

IPI08CN10N G

Description: MOSFET N-CH 100V 95A TO262-3

Produkt ist nicht verfügbar

IPI08CNE8N G

Description: MOSFET N-CH 85V 95A TO262-3

Produkt ist nicht verfügbar

IPI09N03LA

MOSFET N-KANAL POWER MOS

Produkt ist nicht verfügbar

IPI09N03LA

Description: MOSFET N-CH 25V 50A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1642 pF @ 15 V

Produkt ist nicht verfügbar

IPI100N04S3-03

MOSFET N-Ch 40V 100A I2PAK-3 OptiMOS-T

Produkt ist nicht verfügbar

IPI100N04S3-03

Description: N-CHANNEL POWER MOSFET

auf Bestellung 722 Stücke:

Lieferzeit 21-28 Tag (e)

363+	2.08 EUR

Mindestbestellmenge: 363

IPI100N04S3-03

Trans MOSFET N-CH 40V 100A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI100N04S3-03M

MOSFET N-Ch 40V 100A I2PAK-3

Produkt ist nicht verfügbar

IPI100N04S303AKSA1

Description: MOSFET N-CH 40V 100A TO262-3

Produkt ist nicht verfügbar

IPI100N04S303AKSA1

Trans MOSFET N-CH 40V 100A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI100N04S303MATMA2

MOSFET N-CHANNEL_30/40V

Produkt ist nicht verfügbar

IPI100N04S303MATMA2

OPTIMOS-T POWER-TRANSISTOR

Produkt ist nicht verfügbar

IPI100N04S4-H2

MOSFET N-Ch 40V 100A I2PAK-3 OptiMOS-T2

Produkt ist nicht verfügbar

IPI100N04S4H2AKSA1

Description: MOSFET N-CH 40V 100A TO262-3

auf Bestellung 18000 Stücke:

Lieferzeit 21-28 Tag (e)

524+	1.43 EUR

Mindestbestellmenge: 524

IPI100N04S4H2AKSA1

Trans MOSFET N-CH 40V 100A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI100N04S4H2AKSA1

Description: MOSFET N-CH 40V 100A TO262-3

Produkt ist nicht verfügbar

IPI100N06S3-03

Description: MOSFET N-CH 55V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 480 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21620 pF @ 25 V

Produkt ist nicht verfügbar

IPI100N06S3-03

Trans MOSFET N-CH 55V 100A Automotive 3-Pin(3+Tab) TO-262

Produkt ist nicht verfügbar

IPI100N06S3-04

Description: MOSFET N-CH 55V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 314 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14230 pF @ 25 V

Produkt ist nicht verfügbar

IPI100N06S3-04

Trans MOSFET N-CH 55V 100A Automotive 3-Pin(3+Tab) TO-262

Produkt ist nicht verfügbar

IPI100N06S3L-03

Description: MOSFET N-CH 55V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 230µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26240 pF @ 25 V

auf Bestellung 2442 Stücke:

Lieferzeit 21-28 Tag (e)

239+	3.03 EUR

Mindestbestellmenge: 239

IPI100N06S3L-03

Produkt ist nicht verfügbar

IPI100N06S3L-03

Trans MOSFET N-CH 55V 100A Automotive 3-Pin(3+Tab) TO-262

Produkt ist nicht verfügbar

IPI100N06S3L-04

Trans MOSFET N-CH 55V 100A Automotive 3-Pin(3+Tab) TO-262

Produkt ist nicht verfügbar

IPI100N06S3L04XK

Description: MOSFET N-CH 55V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 362 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17270 pF @ 25 V

auf Bestellung 82 Stücke:

Lieferzeit 21-28 Tag (e)

9+	3.07 EUR
50+	2.34 EUR

Mindestbestellmenge: 9

IPI100N08N3GHKSA1

Description: MOSFET N-CH 80V 70A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 40 V

Produkt ist nicht verfügbar

IPI100N08S2-07

MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS

auf Bestellung 500 Stücke:

Lieferzeit 14-28 Tag (e)

IPI100N08S207AKSA1

Trans MOSFET N-CH 75V 100A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI100N08S207AKSA1

Description: MOSFET N-CH 75V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO262-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V

Produkt ist nicht verfügbar

IPI100N10S3-05

MOSFET N-Ch 100V 100A I2PAK-3 OptiMOS-T

auf Bestellung 439 Stücke:

Lieferzeit 14-28 Tag (e)

IPI100N10S305AKSA1

Description: MOSFET N-CH 100V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V

Produkt ist nicht verfügbar

IPI100N10S305AKSA1

Trans MOSFET N-CH 100V 100A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI100N10S305AKSA1

Description: MOSFET N-CH 100V 100A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V

auf Bestellung 20500 Stücke:

Lieferzeit 21-28 Tag (e)

160+	4.51 EUR

Mindestbestellmenge: 160

IPI100N12S305AKSA1

MOSFET N-CHANNEL 100+

auf Bestellung 500 Stücke:

Lieferzeit 14-28 Tag (e)

IPI100P03P3L-04

Description: MOSFET P-CH 30V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 475µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9300 pF @ 25 V

Produkt ist nicht verfügbar

IPI110N20N3 G

MOSFET N-Ch 200V 88A I2PAK-3 OptiMOS 3

auf Bestellung 14 Stücke:

Lieferzeit 14-28 Tag (e)

3+	20.96 EUR
10+	18.93 EUR
100+	15.68 EUR
500+	13.65 EUR

Mindestbestellmenge: 3

IPI110N20N3GAKSA1

Trans MOSFET N-CH 200V 88A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI110N20N3GAKSA1

Description: MOSFET N-CH 200V 88A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 88A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V

Produkt ist nicht verfügbar

IPI110N20N3GAKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 63A; 300W; PG-TO262-3
Mounting: THT
On-state resistance: 10.7mΩ
Case: PG-TO262-3
Polarisation: unipolar
Kind of channel: enhanced
Technology: OptiMOS™ 3
Power dissipation: 300W
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 200V
Drain current: 63A

Produkt ist nicht verfügbar

IPI111N15N3 G

MOSFET N-Ch 150V 83A I2PAK-3 OptiMOS 3

Produkt ist nicht verfügbar

IPI111N15N3GAKSA1

Description: MOSFET N-CH 150V 83A TO262-3

Produkt ist nicht verfügbar

IPI111N15N3GAKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

Produkt ist nicht verfügbar

IPI111N15N3GAKSA1

MOSFET N-Ch 150V 83A I2PAK-3

auf Bestellung 500 Stücke:

Lieferzeit 14-28 Tag (e)

IPI111N15N3GAKSA1

Produkt ist nicht verfügbar

IPI111N15N3GAKSA1

Trans MOSFET N-CH 150V 83A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI111N15N3GAKSA1

Description: MOSFET N-CH 150V 83A TO262-3

Produkt ist nicht verfügbar

IPI111N15N3GAKSA1

Trans MOSFET N-CH 150V 83A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI11N03LA

Description: MOSFET N-CH 25V 30A I2PAK

Produkt ist nicht verfügbar

IPI11N60C3A

1 channel N-Channel MOSFET

Produkt ist nicht verfügbar

IPI11N60C3AAKSA2

Description: MOSFET N-CH I2PAK
Packaging: Bulk
Part Status: Obsolete

auf Bestellung 21902 Stücke:

Lieferzeit 21-28 Tag (e)

91+	8.61 EUR

Mindestbestellmenge: 91

IPI11N60C3AAKSA2

Description: MOSFET N-CH I2PAK
Packaging: Tube
Part Status: Obsolete

Produkt ist nicht verfügbar

IPI120N04S3-02

MOSFET N-Ch 40V 120A I2PAK-3 OptiMOS-T

Produkt ist nicht verfügbar

IPI120N04S302AKSA1

Trans MOSFET N-CH 40V 120A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI120N04S302AKSA1

Description: MOSFET N-CH 40V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 25 V

Produkt ist nicht verfügbar

IPI120N04S302AKSA1

Description: MOSFET N-CH 40V 120A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 25 V

auf Bestellung 50600 Stücke:

Lieferzeit 21-28 Tag (e)

94+	7.6 EUR

Mindestbestellmenge: 94

IPI120N04S4-01

MOSFET N-Ch 40V 120A I2PAK-3 OptiMOS-T2

auf Bestellung 504 Stücke:

Lieferzeit 14-28 Tag (e)

7+	8.53 EUR
10+	7.15 EUR
25+	6.76 EUR
100+	5.8 EUR
250+	5.72 EUR
500+	4.84 EUR
1000+	4.39 EUR

Mindestbestellmenge: 7

IPI120N04S4-01M

Description: MOSFET N-CH TO262-3
Packaging: Tube

Produkt ist nicht verfügbar

IPI120N04S4-02

MOSFET N-Ch 40V 120A I2PAK-3 OptiMOS-T2

auf Bestellung 500 Stücke:

Lieferzeit 14-28 Tag (e)

8+	7.33 EUR
10+	6.14 EUR
25+	5.8 EUR
100+	4.99 EUR
250+	4.68 EUR
500+	4.42 EUR
1000+	3.56 EUR

Mindestbestellmenge: 8

IPI120N04S401AKSA1

Trans MOSFET N-CH 40V 120A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI120N04S401AKSA1

Description: MOSFET N-CH 40V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V

auf Bestellung 235 Stücke:

Lieferzeit 21-28 Tag (e)

4+	8.4 EUR
10+	7.05 EUR
100+	5.71 EUR

Mindestbestellmenge: 4

IPI120N04S402AKSA1

Trans MOSFET N-CH 40V 120A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI120N04S402AKSA1

Description: MOSFET N-CH 40V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10740 pF @ 25 V

auf Bestellung 500 Stücke:

Lieferzeit 21-28 Tag (e)

4+	7.31 EUR
10+	6.12 EUR
100+	4.95 EUR
500+	4.4 EUR

Mindestbestellmenge: 4

IPI120N04S402AKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 120A; 158W
Case: PG-TO262-3
Mounting: THT
Technology: OptiMOS™ T2
Power dissipation: 158W
Polarisation: unipolar
Gate charge: 103nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke

Produkt ist nicht verfügbar

IPI120N04S402AKSA1

Produkt ist nicht verfügbar

IPI120N06S4-02

Trans MOSFET N-CH 60V 120A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI120N06S4-03

MOSFET N-Ch 60V 120A I2PAK-3 OptiMOS-T2

Produkt ist nicht verfügbar

IPI120N06S4-H1

MOSFET N-Ch 60V 120A I2PAK-3 OptiMOS-T2

Produkt ist nicht verfügbar

IPI120N06S4-H1

auf Bestellung 2100 Stücke:

Lieferzeit 21-28 Tag (e)

IPI120N06S402AKSA1

Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V

Produkt ist nicht verfügbar

IPI120N06S402AKSA1

Trans MOSFET N-CH 60V 120A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI120N06S402AKSA2

Trans MOSFET N-CH 60V 120A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI120N06S402AKSA2

Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO262-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V

auf Bestellung 10400 Stücke:

Lieferzeit 21-28 Tag (e)

154+	4.71 EUR

Mindestbestellmenge: 154

IPI120N06S402AKSA2

Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO262-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V

Produkt ist nicht verfügbar

IPI120N06S402AKSA2

MOSFET MOSFET

auf Bestellung 423 Stücke:

Lieferzeit 14-28 Tag (e)

6+	8.76 EUR
10+	7.36 EUR
25+	6.94 EUR
100+	5.95 EUR
250+	5.62 EUR
500+	5.28 EUR
1000+	4.52 EUR

Mindestbestellmenge: 6

IPI120N06S403AKSA1

Trans MOSFET N-CH 60V 120A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI120N06S403AKSA1

Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13150 pF @ 25 V

Produkt ist nicht verfügbar

IPI120N06S403AKSA2

Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13150 pF @ 25 V

Produkt ist nicht verfügbar

IPI120N06S4H1AKSA1

Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V

Produkt ist nicht verfügbar

IPI120N06S4H1AKSA1

Trans MOSFET N-CH 60V 120A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI120N06S4H1AKSA2

Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V

Produkt ist nicht verfügbar

IPI120N08S403AKSA1

Description: MOSFET N-CH 80V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 223µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IPI120N08S403AKSA1

MOSFET N-CHANNEL 75/80V

Produkt ist nicht verfügbar

IPI120N08S403AKSA1

Trans MOSFET N-CH 80V 120A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI120N08S404AKSA1

MOSFET N-CHANNEL 75/80V

auf Bestellung 90 Stücke:

Lieferzeit 14-28 Tag (e)

IPI120N08S404AKSA1

Trans MOSFET N-CH 80V 120A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI120N08S404AKSA1

Description: MOSFET N-CH 80V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IPI120N10S403AKSA1

Description: MOSFET N-CH 100V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10120 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IPI120N10S403AKSA1

MOSFET N-CHANNEL 100+

auf Bestellung 420 Stücke:

Lieferzeit 14-28 Tag (e)

IPI120N10S403AKSA1

Trans MOSFET N-CH 100V 120A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI120N10S405AKSA1

Description: MOSFET N-CH 100V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 100A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IPI120N10S405AKSA1

MOSFET N-CHANNEL 100+

auf Bestellung 500 Stücke:

Lieferzeit 14-28 Tag (e)

IPI120N10S405AKSA1

Trans MOSFET N-CH 100V 120A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI120P04P404AKSA1

Description: MOSFET P-CH 40V 120A TO262-3

Produkt ist nicht verfügbar

IPI120P04P4L-03

MOSFET P-Ch -40V -120A I2PAK-3 OptiMOS-P2

auf Bestellung 240 Stücke:

Lieferzeit 14-28 Tag (e)

IPI120P04P4L03AKSA1

Trans MOSFET P-CH 40V 120A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI120P04P4L03AKSA1

Description: MOSFET P-CH TO262-3

Produkt ist nicht verfügbar

IPI126N10N3 G

MOSFET N-Ch 100V 58A I2PAK-3 OptiMOS 3

auf Bestellung 22 Stücke:

Lieferzeit 14-28 Tag (e)

IPI126N10N3 G

Description: MOSFET N-CH 100V 58A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 46A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V

Produkt ist nicht verfügbar

IPI126N10N3G

Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 46A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V

Produkt ist nicht verfügbar

IPI126N10N3GXKSA1

Trans MOSFET N-CH 100V 58A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI126N10N3GXKSA1

Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 46A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V

auf Bestellung 10500 Stücke:

Lieferzeit 21-28 Tag (e)

433+	1.64 EUR

Mindestbestellmenge: 433

IPI12CN10N G

Description: MOSFET N-CH 100V 67A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 67A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 50 V

Produkt ist nicht verfügbar

IPI12CNE8N G

Description: MOSFET N-CH 85V 67A TO262-3

Produkt ist nicht verfügbar

IPI139N08N3GHKSA1

Description: MOSFET N-CH 80V 45A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 45A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 40 V

Produkt ist nicht verfügbar

IPI147N12N3 G

MOSFET N-Ch 120V 56A I2PAK-3 OptiMOS 3

auf Bestellung 33 Stücke:

Lieferzeit 14-28 Tag (e)

9+	5.93 EUR
10+	5.33 EUR
100+	4.26 EUR
500+	3.51 EUR

Mindestbestellmenge: 9

IPI147N12N3G

Description: IPI147N12 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 61µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V

auf Bestellung 14603 Stücke:

Lieferzeit 21-28 Tag (e)

307+	2.55 EUR

Mindestbestellmenge: 307

IPI147N12N3GAKSA1

IPI147N12N3GAKSA1 THT N channel transistors

Produkt ist nicht verfügbar

IPI147N12N3GAKSA1

Trans MOSFET N-CH 120V 56A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI147N12N3GAKSA1

Description: MOSFET N-CH 120V 56A TO262-3

auf Bestellung 14155 Stücke:

Lieferzeit 21-28 Tag (e)

IPI147N12N3GAKSA1

Description: MOSFET N-CH 120V 56A TO262-3

Produkt ist nicht verfügbar

IPI14N03LA

Description: MOSFET N-CH 25V 30A TO262-3

Produkt ist nicht verfügbar

IPI14N03LA

09+

auf Bestellung 5030 Stücke:

Lieferzeit 21-28 Tag (e)

IPI16CN10N G

Description: MOSFET N-CH 100V 53A TO262-3

Produkt ist nicht verfügbar

IPI16CNE8N G

Description: MOSFET N-CH 85V 53A TO262-3

Produkt ist nicht verfügbar

IPI180N10N3 G

MOSFET N-Ch 100V 43A I2PAK-3 OptiMOS 3

Produkt ist nicht verfügbar

IPI180N10N3GXKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

auf Bestellung 484 Stücke:

Lieferzeit 7-14 Tag (e)

45+	1.6 EUR
52+	1.39 EUR
74+	0.97 EUR
79+	0.92 EUR
1000+	0.9 EUR

Mindestbestellmenge: 45

IPI180N10N3GXKSA1

auf Bestellung 484 Stücke:

Lieferzeit 14-21 Tag (e)

45+	1.6 EUR
52+	1.39 EUR
74+	0.97 EUR
79+	0.92 EUR

Mindestbestellmenge: 45

IPI180N10N3GXKSA1

Description: MOSFET N-CH 100V 43A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TO262-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V

Produkt ist nicht verfügbar

IPI180N10N3GXKSA1

Trans MOSFET N-CH 100V 43A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI200N15N3 G

MOSFET N-Ch 150V 50A I2PAK-3 OptiMOS 3

Produkt ist nicht verfügbar

IPI200N15N3 G

Description: MOSFET N-CH 150V 50A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V

Produkt ist nicht verfügbar

IPI200N15N3 G

Trans MOSFET N-CH 150V 50A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI200N15N3GHKSA1

Trans MOSFET N-CH 150V 50A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI200N15N3GXKSA1

Trans MOSFET N-CH 150V 50A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI200N15N3GXKSA1

MOSFET N-Ch 150V 50A I2PAK-3

Produkt ist nicht verfügbar

IPI200N25N3 G

MOSFET N-Ch 250V 64A I2PAK-3 OptiMOS 3

auf Bestellung 500 Stücke:

Lieferzeit 14-28 Tag (e)

IPI200N25N3GAKSA1

Description: MOSFET N-CH 250V 64A TO262-3

Produkt ist nicht verfügbar

IPI200N25N3GAKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 88A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of channel: enhanced

Produkt ist nicht verfügbar

IPI200N25N3GAKSA1

Trans MOSFET N-CH 250V 64A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI200N25N3GAKSA1

Description: MOSFET N-CH 250V 64A TO262-3

Produkt ist nicht verfügbar

IPI200N25N3GAKSA1

Produkt ist nicht verfügbar

IPI22N03S4L-15

MOSFET N-Ch 30V 22A I2PAK-3 OptiMOS-T2

auf Bestellung 286 Stücke:

Lieferzeit 14-28 Tag (e)

IPI22N03S4L-15

Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 22A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V

Produkt ist nicht verfügbar

IPI22N03S4L-15

Trans MOSFET N-CH 30V 22A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI22N03S4L15AKSA1

Description: MOSFET N-CH 30V 22A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 22A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25

auf Bestellung 17500 Stücke:

Lieferzeit 21-28 Tag (e)

903+	0.86 EUR

Mindestbestellmenge: 903

IPI22N03S4L15AKSA1

Trans MOSFET N-CH 30V 22A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI22N03S4L15AKSA1

Description: MOSFET N-CH 30V 22A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 22A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Drain to Source Voltage (Vdss): 30 V

Produkt ist nicht verfügbar

IPI25N06S3-25

Description: MOSFET N-CH 55V 25A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 25.1mOhm @ 15A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1862 pF @ 25 V

Produkt ist nicht verfügbar

IPI25N06S3-25

Trans MOSFET N-CH 55V 25A Automotive 3-Pin(3+Tab) TO-262

Produkt ist nicht verfügbar

IPI25N06S3L-22

Description: MOSFET N-CH 55V 25A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 21.6mOhm @ 17A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V

Produkt ist nicht verfügbar

IPI25N06S3L-22

Trans MOSFET N-CH 55V 25A Automotive 3-Pin(3+Tab) TO-262

Produkt ist nicht verfügbar

IPI26CN10N G

Description: MOSFET N-CH 100V 35A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 39µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 50 V

Produkt ist nicht verfügbar

IPI26CN10NG

auf Bestellung 1080 Stücke:

Lieferzeit 21-28 Tag (e)

IPI26CNE8N G

Description: MOSFET N-CH 85V 35A TO262-3

Produkt ist nicht verfügbar

IPI320N203G

Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V

auf Bestellung 350 Stücke:

Lieferzeit 21-28 Tag (e)

161+	4.61 EUR

Mindestbestellmenge: 161

IPI320N20N3 G

MOSFET N-Ch 200V 34A I2PAK-3 OptiMOS 3

auf Bestellung 5 Stücke:

Lieferzeit 14-28 Tag (e)

6+	9.26 EUR
10+	8.32 EUR
100+	6.81 EUR
500+	5.8 EUR

Mindestbestellmenge: 6

IPI320N20N3GAKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO262-3
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 34A
Kind of channel: enhanced
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Case: PG-TO262-3
On-state resistance: 32mΩ
Gate-source voltage: ±20V
Mounting: THT
Anzahl je Verpackung: 1 Stücke

Produkt ist nicht verfügbar

IPI320N20N3GAKSA1

Description: MOSFET N-CH 200V 34A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V

Produkt ist nicht verfügbar

IPI320N20N3GAKSA1

Trans MOSFET N-CH 200V 34A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI320N20N3GAKSA1

Description: MOSFET N-CH 200V 34A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V

auf Bestellung 306 Stücke:

Lieferzeit 21-28 Tag (e)

161+	4.61 EUR

Mindestbestellmenge: 161

IPI320N20N3GAKSA1

Produkt ist nicht verfügbar

IPI35CN10N G

Description: MOSFET N-CH 100V 27A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 27A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 29µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V

Produkt ist nicht verfügbar

IPI45N06S3-16

Description: MOSFET N-CH 55V 45A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 23A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V

Produkt ist nicht verfügbar

IPI45N06S3-16

Trans MOSFET N-CH 55V 45A Automotive 3-Pin(3+Tab) TO-262

Produkt ist nicht verfügbar

IPI45N06S3L-13

Description: MOSFET N-CH 55V 45A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 26A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V

Produkt ist nicht verfügbar

IPI45N06S3L-13

Trans MOSFET N-CH 55V 45A Automotive 3-Pin(3+Tab) TO-262

Produkt ist nicht verfügbar

IPI45N06S4-09AKSA2

Description: IPI45N06 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V

auf Bestellung 97500 Stücke:

Lieferzeit 21-28 Tag (e)

359+	2.07 EUR

Mindestbestellmenge: 359

IPI45N06S409AKSA1

Trans MOSFET N-CH 60V 45A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI45N06S409AKSA1

Description: MOSFET N-CH 60V 45A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V

auf Bestellung 15000 Stücke:

Lieferzeit 21-28 Tag (e)

799+	0.94 EUR

Mindestbestellmenge: 799

IPI45N06S409AKSA1

Produkt ist nicht verfügbar

IPI45N06S409AKSA2

MOSFET MOSFET

auf Bestellung 389 Stücke:

Lieferzeit 14-28 Tag (e)

12+	4.5 EUR
14+	3.74 EUR
100+	2.96 EUR
250+	2.76 EUR
500+	2.49 EUR
1000+	2.15 EUR
2500+	2.04 EUR

Mindestbestellmenge: 12

IPI45N06S409AKSA2

Trans MOSFET N-CH 60V 45A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI45N06S409AKSA2

Description: MOSFET N-CH 60V 45A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V

auf Bestellung 500 Stücke:

Lieferzeit 21-28 Tag (e)

7+	4.26 EUR
10+	3.54 EUR
100+	2.82 EUR
500+	2.38 EUR

Mindestbestellmenge: 7

IPI45N06S4L-08

MOSFET N-Ch 60V 45A I2PAK-3 OptiMOS-T2

Produkt ist nicht verfügbar

IPI45N06S4L08AKSA1

Description: MOSFET N-CH 60V 45A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V

Produkt ist nicht verfügbar

IPI45N06S4L08AKSA1

MOSFET N-Ch 60V 45A I2PAK-3 OptiMOS-T2

Produkt ist nicht verfügbar

IPI45N06S4L08AKSA2

MOSFET MOSFET

Produkt ist nicht verfügbar

IPI45N06S4L08AKSA2

Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk

auf Bestellung 11000 Stücke:

Lieferzeit 21-28 Tag (e)

742+	0.99 EUR

Mindestbestellmenge: 742

IPI45N06S4L08AKSA3

Description: MOSFET N-CHANNEL_55/60V
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V

auf Bestellung 30216 Stücke:

Lieferzeit 21-28 Tag (e)

730+	1.07 EUR

Mindestbestellmenge: 730

IPI45N06S4L08AKSA3

Trans MOSFET N-CH 60V 45A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI45N06S4L08AKSA3

Description: MOSFET N-CHANNEL_55/60V
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V

Produkt ist nicht verfügbar

IPI45N06S4L08AKSA3

MOSFET

auf Bestellung 1000 Stücke:

Lieferzeit 14-28 Tag (e)

IPI45P03P4L-11

MOSFET P-Ch -30V -45A I2PAK-3 OptiMOS-P2

Produkt ist nicht verfügbar

IPI45P03P4L11AKSA1

Description: MOSFET P-CH 30V 45A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V

Produkt ist nicht verfügbar

IPI47N10S-33

MOSFET N-Ch 100V 33A I2PAK-3 SIPMOS

Produkt ist nicht verfügbar

IPI47N10S33AKSA1

Description: MOSFET N-CH 100V 47A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 33A, 10V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V

Produkt ist nicht verfügbar

IPI47N10SL-26

MOSFET N-Ch 100V 47A I2PAK-3 SIPMOS

Produkt ist nicht verfügbar

IPI47N10SL26AKSA1

Trans MOSFET N-CH 100V 47A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI47N10SL26AKSA1

Description: MOSFET N-CH 100V 47A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 33A, 10V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25

Produkt ist nicht verfügbar

IPI50CN10NGHKSA1

Description: MOSFET N-CH 100V 20A TO262-3

Produkt ist nicht verfügbar

IPI50N10S3L-16

MOSFET N-Ch 100V 50A I2PAK-3 OptiMOS-T

auf Bestellung 268 Stücke:

Lieferzeit 14-28 Tag (e)

9+	6.47 EUR
10+	5.38 EUR
100+	4.29 EUR
250+	3.98 EUR
500+	3.61 EUR
1000+	3.07 EUR
2500+	2.94 EUR

Mindestbestellmenge: 9

IPI50N10S3L16AKSA1

Description: MOSFET N-CH 100V 50A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V

Produkt ist nicht verfügbar

IPI50N10S3L16AKSA1

Trans MOSFET N-CH 100V 50A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI50N10S3L16AKSA1

Description: MOSFET N-CH 100V 50A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V

auf Bestellung 13050 Stücke:

Lieferzeit 21-28 Tag (e)

231+	3.12 EUR

Mindestbestellmenge: 231

IPI50N12S3L15AKSA1

Description: OPTLMOS N-CHANNEL POWER MOSFET

auf Bestellung 27000 Stücke:

Lieferzeit 21-28 Tag (e)

IPI50N12S3L15AKSA1

MOSFET N-CHANNEL 100+

auf Bestellung 500 Stücke:

Lieferzeit 14-28 Tag (e)

IPI50R140CP

MOSFET N-Ch 500V 23A I2PAK-3 CoolMOS CP

auf Bestellung 730 Stücke:

Lieferzeit 14-28 Tag (e)

IPI50R140CP

Description: COOLMOS N-CHANNEL POWER MOSFET

auf Bestellung 500 Stücke:

Lieferzeit 21-28 Tag (e)

IPI50R140CP

Description: MOSFET N-CH 550V 23A TO262-3

Produkt ist nicht verfügbar

IPI50R140CPXKSA1

Trans MOSFET N-CH 500V 23A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI50R140CPXKSA1

Description: HIGH POWER_LEGACY
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V

Produkt ist nicht verfügbar

IPI50R140CPXKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 192W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 192W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of channel: enhanced

Produkt ist nicht verfügbar

IPI50R140CPXKSA1

Produkt ist nicht verfügbar

IPI50R140CPXKSA1

Description: HIGH POWER_LEGACY
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V

auf Bestellung 20374 Stücke:

Lieferzeit 21-28 Tag (e)

144+	4.97 EUR

Mindestbestellmenge: 144

IPI50R199CP

MOSFET N-Ch 550V 17A I2PAK-3 CoolMOS CP

auf Bestellung 345 Stücke:

Lieferzeit 14-28 Tag (e)

IPI50R199CPXKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 17A
Power dissipation: 139W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

Produkt ist nicht verfügbar

IPI50R199CPXKSA1

Description: MOSFET N-CH 500V 17A TO262-3

Produkt ist nicht verfügbar

IPI50R199CPXKSA1

Description: MOSFET N-CH 500V 17A TO262-3

auf Bestellung 13987 Stücke:

Lieferzeit 21-28 Tag (e)

IPI50R199CPXKSA1

Produkt ist nicht verfügbar

IPI50R250CP

MOSFET N-Ch 550V 13A I2PAK-3 CoolMOS CP

auf Bestellung 500 Stücke:

Lieferzeit 14-28 Tag (e)

IPI50R250CP

Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V

auf Bestellung 10500 Stücke:

Lieferzeit 21-28 Tag (e)

270+	2.89 EUR

Mindestbestellmenge: 270

IPI50R250CPXKSA1

Description: MOSFET N-CH 500V 13A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V

Produkt ist nicht verfügbar

IPI50R250CPXKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO262-3
Case: PG-TO262-3
Drain-source voltage: 500V
Drain current: 13A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT

Produkt ist nicht verfügbar

IPI50R250CPXKSA1

Trans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI50R250CPXKSA1

auf Bestellung 985 Stücke:

Lieferzeit 21-28 Tag (e)

293+	2.51 EUR

Mindestbestellmenge: 293

IPI50R250CPXKSA1

Produkt ist nicht verfügbar

IPI50R299CP

Description: N-CHANNEL POWER MOSFET

auf Bestellung 9978 Stücke:

Lieferzeit 21-28 Tag (e)

341+	2.21 EUR

Mindestbestellmenge: 341

IPI50R299CP

MOSFET N-Ch 550V 12A I2PAK-3 CoolMOS CP

Produkt ist nicht verfügbar

IPI50R299CPXK

MOSFET N-Ch 550V 12A I2PAK-3 CoolMOS CP

Produkt ist nicht verfügbar

IPI50R299CPXKSA1

Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI50R299CPXKSA1

Description: MOSFET N-CH 500V 12A TO262-3

auf Bestellung 500 Stücke:

Lieferzeit 21-28 Tag (e)

IPI50R350CP

MOSFET N-Ch 500V 10A I2PAK-3 CoolMOS CP

auf Bestellung 394 Stücke:

Lieferzeit 14-28 Tag (e)

8+	7.36 EUR
10+	6.66 EUR
100+	5.3 EUR
500+	4.37 EUR

Mindestbestellmenge: 8

IPI50R350CP

Description: MOSFET N-CH 550V 10A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.6A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 370µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 100 V

Produkt ist nicht verfügbar

IPI50R350CPXKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10A; 89W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Power dissipation: 89W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: THT
Kind of channel: enhanced

Produkt ist nicht verfügbar

IPI50R350CPXKSA1

Produkt ist nicht verfügbar

IPI50R350CPXKSA1

Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 200 Stücke:

Lieferzeit 14-21 Tag (e)

IPI50R399CP

Description: MOSFET N-CH 500V 9A TO-262

auf Bestellung 385 Stücke:

Lieferzeit 21-28 Tag (e)

IPI50R399CP

MOSFET N-Ch 500V 9A I2PAK-3 CoolMOS CP

Produkt ist nicht verfügbar

IPI50R399CPXKSA1

MOSFET N-Ch 560V 9A I2PAK-3

Produkt ist nicht verfügbar

IPI50R399CPXKSA1

Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI50R399CPXKSA1

Description: MOSFET N-CH 500V 9A TO262-3

Produkt ist nicht verfügbar

IPI50R399CPXKSA1

IPI50R399CPXKSA1 THT N channel transistors

Produkt ist nicht verfügbar

IPI50R399CPXKSA2

Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI50R399CPXKSA2

Description: MOSFET N-CH 500V 9A TO262-3

Produkt ist nicht verfügbar

IPI50R399CPXKSA2

IPI50R399CPXKSA2 THT N channel transistors

Produkt ist nicht verfügbar

IPI50R399CPXKSA2

MOSFET LOW POWER_LEGACY

Produkt ist nicht verfügbar

IPI530N15N3 G

MOSFET N-Ch 150V 21A I2PAK-3

auf Bestellung 800 Stücke:

Lieferzeit 14-28 Tag (e)

10+	5.62 EUR
11+	5.07 EUR
100+	4.06 EUR
500+	3.33 EUR

Mindestbestellmenge: 10

IPI530N15N3GXKSA1

MOSFET N-Ch 150V 21A I2PAK-3

auf Bestellung 823 Stücke:

Lieferzeit 14-28 Tag (e)

10+	5.62 EUR
11+	5.07 EUR
100+	4.06 EUR
500+	3.33 EUR

Mindestbestellmenge: 10

IPI530N15N3GXKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO262-3
Case: PG-TO262-3
Mounting: THT
Technology: OptiMOS™ 3
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 53mΩ
Power dissipation: 68W
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

Produkt ist nicht verfügbar

IPI530N15N3GXKSA1

Description: PFET, 21A I(D), 150V, 0.053OHM,

Produkt ist nicht verfügbar

IPI530N15N3GXKSA1

Produkt ist nicht verfügbar

IPI530N15N3GXKSA1

Description: MOSFET N-CH 150V 21A TO262-3

Produkt ist nicht verfügbar

IPI600N25N3 G

MOSFET N-Ch 250V 25A I2PAK-3 OptiMOS 3

Produkt ist nicht verfügbar

IPI600N25N3GAKSA1

Description: MOSFET N-CH 250V 25A TO262-3

Produkt ist nicht verfügbar

IPI600N25N3GAKSA1

Trans MOSFET N-CH 250V 25A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI60R099CP

MOSFET N-Ch 600V 31A I2PAK-3 CoolMOS CP

auf Bestellung 549 Stücke:

Lieferzeit 14-28 Tag (e)

3+	19.63 EUR
10+	16.77 EUR
25+	14.22 EUR
100+	12.69 EUR
250+	12.66 EUR
500+	11.65 EUR
1000+	10.69 EUR

Mindestbestellmenge: 3

IPI60R099CP

Description: PFET, 31A I(D), 600V, 0.099OHM,
Packaging: Bulk
Part Status: Active

Produkt ist nicht verfügbar

IPI60R099CP
Produktcode: 124116

IC > IC andere

Produkt ist nicht verfügbar

IPI60R099CPA

MOSFET N-Ch 600V 31A I2PAK-3 CoolMOS CPA

auf Bestellung 379 Stücke:

Lieferzeit 14-28 Tag (e)

2+	26.05 EUR
10+	23.56 EUR
100+	19.5 EUR
500+	18.25 EUR

Mindestbestellmenge: 2

IPI60R099CPAAKSA1

Description: MOSFET N-CH 600V 31A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V

Produkt ist nicht verfügbar

IPI60R099CPAAKSA1

Trans MOSFET N-CH 600V 31A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI60R099CPAAKSA1

Description: MOSFET N-CH 600V 31A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V

auf Bestellung 3400 Stücke:

Lieferzeit 21-28 Tag (e)

57+	12.82 EUR

Mindestbestellmenge: 57

IPI60R099CPXKSA1

Trans MOSFET N-CH 600V 31A 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 4 Stücke:

Lieferzeit 14-21 Tag (e)

IPI60R099CPXKSA1

Trans MOSFET N-CH 600V 31A 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 1545 Stücke:

Lieferzeit 14-21 Tag (e)

13+	12.6 EUR
15+	10.35 EUR
100+	8.25 EUR
500+	6.94 EUR
1000+	5.99 EUR

Mindestbestellmenge: 13

IPI60R099CPXKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO262-3-1
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO262-3-1
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhanced

Produkt ist nicht verfügbar

IPI60R099CPXKSA1

Description: MOSFET N-CH 600V 31A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V

auf Bestellung 500 Stücke:

Lieferzeit 21-28 Tag (e)

2+	19.58 EUR
10+	16.8 EUR
100+	14 EUR
500+	12.35 EUR

Mindestbestellmenge: 2

IPI60R099CPXKSA1

Trans MOSFET N-CH 600V 31A 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 1545 Stücke:

Lieferzeit 14-21 Tag (e)

13+	12.6 EUR
15+	10.35 EUR
100+	8.25 EUR
500+	6.94 EUR
1000+	5.99 EUR

Mindestbestellmenge: 13

IPI60R099CPXKSA1

Produkt ist nicht verfügbar

IPI60R099CPXKSA1

Trans MOSFET N-CH 600V 31A 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 4 Stücke:

Lieferzeit 14-21 Tag (e)

IPI60R099CPXKSA1

Trans MOSFET N-CH 600V 31A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI60R125CP

MOSFET N-Ch 600V 25A I2PAK-3 CoolMOS CP

Produkt ist nicht verfügbar

IPI60R125CP

Description: 25A, 600V, 0.125OHM, N-CHANNEL M
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V

Produkt ist nicht verfügbar

IPI60R125CPXKSA1

IPI60R125CPXKSA1 THT N channel transistors

Produkt ist nicht verfügbar

IPI60R125CPXKSA1

Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI60R125CPXKSA1

Description: MOSFET N-CH 650V 25A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V

auf Bestellung 500 Stücke:

Lieferzeit 21-28 Tag (e)

2+	15.16 EUR
10+	13 EUR
100+	10.83 EUR
500+	9.56 EUR

Mindestbestellmenge: 2

IPI60R165CP

Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V

Produkt ist nicht verfügbar

IPI60R165CPAKSA1

Description: MOSFET N-CH 650V 21A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: PG-TO262-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V

Produkt ist nicht verfügbar

IPI60R165CPAKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of channel: enhanced

Produkt ist nicht verfügbar

IPI60R165CPAKSA1

Produkt ist nicht verfügbar

IPI60R165CPXKSA1

MOSFET N-Ch 650V 21A I2PAK-3

Produkt ist nicht verfügbar

IPI60R165CPXKSA1

Description: HIGH POWER_LEGACY
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V

auf Bestellung 500 Stücke:

Lieferzeit 21-28 Tag (e)

3+	11.73 EUR
10+	9.84 EUR
100+	7.96 EUR
500+	7.08 EUR

Mindestbestellmenge: 3

IPI60R165CPXKSA1

CoolMOS Power Transistors

Produkt ist nicht verfügbar

IPI60R190C6

MOSFET N-Ch 650V 20.2A I2PAK-3 CoolMOS C6

auf Bestellung 1377 Stücke:

Lieferzeit 14-28 Tag (e)

7+	8.16 EUR
10+	6.89 EUR
25+	6.5 EUR
100+	5.56 EUR
250+	5.28 EUR
500+	4.16 EUR
1000+	3.98 EUR

Mindestbestellmenge: 7

IPI60R190C6

Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V

Produkt ist nicht verfügbar

IPI60R190C6XKSA1

Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 458 Stücke:

Lieferzeit 14-21 Tag (e)

75+	2.1 EUR
84+	1.81 EUR
90+	1.62 EUR
100+	1.53 EUR

Mindestbestellmenge: 75

IPI60R190C6XKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhanced

auf Bestellung 27 Stücke:

Lieferzeit 14-21 Tag (e)

15+	4.95 EUR
17+	4.25 EUR
25+	2.95 EUR
26+	2.79 EUR

Mindestbestellmenge: 15

IPI60R190C6XKSA1

Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI60R190C6XKSA1

Description: MOSFET N-CH 600V 20.2A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V

auf Bestellung 495 Stücke:

Lieferzeit 21-28 Tag (e)

4+	8.32 EUR
10+	6.99 EUR
100+	5.66 EUR

Mindestbestellmenge: 4

IPI60R190C6XKSA1

auf Bestellung 27 Stücke:

Lieferzeit 7-14 Tag (e)

15+	4.95 EUR
17+	4.25 EUR
25+	2.95 EUR
26+	2.79 EUR

Mindestbestellmenge: 15

IPI60R190C6XKSA1

Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI60R199CP

Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active

Produkt ist nicht verfügbar

IPI60R199CP
Produktcode: 132999

Transistoren > MOSFET N-CH

Produkt ist nicht verfügbar

IPI60R199CP

MOSFET N-Ch 650V 16A I2PAK-3 CoolMOS CP

Produkt ist nicht verfügbar

IPI60R199CPXKSA1

Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI60R199CPXKSA1

Description: MOSFET N-CH 600V 16A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V

Produkt ist nicht verfügbar

IPI60R199CPXKSA1

MOSFET HIGH POWER_LEGACY

Produkt ist nicht verfügbar

IPI60R199CPXKSA2

Description: HIGH POWER_LEGACY
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V

auf Bestellung 500 Stücke:

Lieferzeit 21-28 Tag (e)

3+	9.57 EUR
10+	8.04 EUR
100+	6.51 EUR
500+	5.78 EUR

Mindestbestellmenge: 3

IPI60R199CPXKSA2

MOSFET HIGH POWER_LEGACY

Produkt ist nicht verfügbar

IPI60R199CPXKSA2

Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-262

Produkt ist nicht verfügbar

IPI60R199CPXKSA2

Trans MOSFET N-CH 600V 16A

Produkt ist nicht verfügbar

IPI60R250CP

MOSFET N-Ch 600V 12A I2PAK-3 CoolMOS CP

Produkt ist nicht verfügbar

IPI60R250CP

Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO262
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V

auf Bestellung 474 Stücke:

Lieferzeit 21-28 Tag (e)

176+	4.06 EUR

Mindestbestellmenge: 176

IPI60R250CPAKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO262-3
Case: PG-TO262-3
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Technology: CoolMOS™ CP
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT

Produkt ist nicht verfügbar

IPI60R250CPAKSA1

Produkt ist nicht verfügbar

IPI60R250CPAKSA1

Description: MOSFET N-CH 650V 12A TO-262

Produkt ist nicht verfügbar

IPI60R250CPAKSA1

MOSFET N-Ch 650V 12A I2PAK-3

Produkt ist nicht verfügbar

IPI60R280C6

Description: MOSFET N-CH 600V 13.8A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO262-3-1
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V

auf Bestellung 1083 Stücke:

Lieferzeit 21-28 Tag (e)

202+	3.57 EUR

Mindestbestellmenge: 202

IPI60R280C6

MOSFET N-Ch 650V 13.8A I2PAK-3 CoolMOS C6

auf Bestellung 496 Stücke:

Lieferzeit 14-28 Tag (e)

IPI60R280C6XKSA1

Description: MOSFET N-CH 600V 13.8A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V

Produkt ist nicht verfügbar

IPI60R280C6XKSA1

Trans MOSFET N-CH 600V 13.8A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI60R280C6XKSA1

Description: MOSFET N-CH 600V 13.8A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V

auf Bestellung 19621 Stücke:

Lieferzeit 21-28 Tag (e)

202+	3.57 EUR

Mindestbestellmenge: 202

IPI60R280C6XKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO262-3
Case: PG-TO262-3
Drain-source voltage: 600V
Drain current: 13.8A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Technology: CoolMOS™ C6
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT

Produkt ist nicht verfügbar

IPI60R280C6XKSA1

Produkt ist nicht verfügbar

IPI60R299CP

Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V

auf Bestellung 8500 Stücke:

Lieferzeit 21-28 Tag (e)

251+	3.12 EUR

Mindestbestellmenge: 251

IPI60R299CPXKSA1

Description: MOSFET N-CH 600V 11A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V

auf Bestellung 500 Stücke:

Lieferzeit 21-28 Tag (e)

231+	3.12 EUR

Mindestbestellmenge: 231

IPI60R299CPXKSA1

Produkt ist nicht verfügbar

IPI60R299CPXKSA1

Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI60R380C6

Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V

Produkt ist nicht verfügbar

IPI60R380C6

MOSFET N-Ch 650V 10.6A I2PAK-3 CoolMOS C6

Produkt ist nicht verfügbar

IPI60R380C6XKSA1

Description: MOSFET N-CH 600V 10.6A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V

Produkt ist nicht verfügbar

IPI60R380C6XKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhanced

Produkt ist nicht verfügbar

IPI60R380C6XKSA1

Produkt ist nicht verfügbar

IPI60R380C6XKSA1

Trans MOSFET N-CH 600V 10.6A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI60R385CP

MOSFET N-Ch 650V 9A I2PAK-3 CoolMOS CP

auf Bestellung 374 Stücke:

Lieferzeit 14-28 Tag (e)

9+	6.01 EUR
10+	5.41 EUR
100+	4.34 EUR
500+	3.54 EUR
1000+	2.94 EUR
2500+	2.73 EUR
5000+	2.65 EUR

Mindestbestellmenge: 9

IPI60R385CP

Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V

auf Bestellung 78346 Stücke:

Lieferzeit 21-28 Tag (e)

293+	2.68 EUR

Mindestbestellmenge: 293

IPI60R385CP (6R385P)
Produktcode: 192857

Transistoren > MOSFET N-CH

Produkt ist nicht verfügbar

IPI60R385CPXKSA1

Description: MOSFET N-CH 650V 9A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V

Produkt ist nicht verfügbar

IPI60R385CPXKSA1

Trans MOSFET N-CH 650V 9A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI60R385CPXKSA1

auf Bestellung 22000 Stücke:

Lieferzeit 21-28 Tag (e)

293+	2.47 EUR

Mindestbestellmenge: 293

IPI60R520CPAKSA1

Description: MOSFET N-CH 600V 6.8A TO-262

Produkt ist nicht verfügbar

IPI60R600CP

MOSFET N-Ch 600V 6.1A I2PAK-3 CoolMOS CP

Produkt ist nicht verfügbar

IPI60R600CP

Trans MOSFET N-CH 600V 6.1A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI60R600CPAKSA1

Description: MOSFET N-CH 600V 6.1A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V

Produkt ist nicht verfügbar

IPI65R099C6

Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V

Produkt ist nicht verfügbar

IPI65R099C6XKSA1

Trans MOSFET N-CH 650V 38A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI65R099C6XKSA1

Description: MOSFET N-CH 650V 38A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V

Produkt ist nicht verfügbar

IPI65R099C6XKSA1

MOSFET N-Ch 700V 38A I2PAK-3

Produkt ist nicht verfügbar

IPI65R099C6XKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhanced

Produkt ist nicht verfügbar

IPI65R099C6XKSA1

Produkt ist nicht verfügbar

IPI65R110CFD

Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V

auf Bestellung 430 Stücke:

Lieferzeit 21-28 Tag (e)

119+	6.6 EUR

Mindestbestellmenge: 119

IPI65R110CFD

MOSFET N-Ch 700V 31.2A I2PAK-3 CoolMOS CFD2

auf Bestellung 500 Stücke:

Lieferzeit 14-28 Tag (e)

IPI65R110CFDXKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of channel: enhanced

Produkt ist nicht verfügbar

IPI65R110CFDXKSA1

Produkt ist nicht verfügbar

IPI65R110CFDXKSA1

Description: MOSFET N-CH 650V 31.2A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V

Produkt ist nicht verfügbar

IPI65R110CFDXKSA1

Trans MOSFET N-CH 700V 31.2A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI65R150CFD

Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V

auf Bestellung 17139 Stücke:

Lieferzeit 21-28 Tag (e)

189+	3.92 EUR

Mindestbestellmenge: 189

IPI65R150CFDXKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.4A; 195.3W; PG-TO262-3
Mounting: THT
Case: PG-TO262-3
Drain-source voltage: 650V
Drain current: 22.4A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 195.3W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V

Produkt ist nicht verfügbar

IPI65R150CFDXKSA1

Produkt ist nicht verfügbar

IPI65R150CFDXKSA1

Description: MOSFET N-CH 650V 22.4A TO262-3

auf Bestellung 12959 Stücke:

Lieferzeit 21-28 Tag (e)

IPI65R150CFDXKSA1

Description: MOSFET N-CH 650V 22.4A TO262-3

Produkt ist nicht verfügbar

IPI65R150CFDXKSA1

MOSFET N-Ch 700V 72A I2PAK-3

Produkt ist nicht verfügbar

IPI65R190C

Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V

auf Bestellung 500 Stücke:

Lieferzeit 21-28 Tag (e)

163+	4.81 EUR

Mindestbestellmenge: 163

IPI65R190C6

MOSFET N-Ch 700V 20.2A I2PAK-3 CoolMOS C6

auf Bestellung 2 Stücke:

Lieferzeit 14-28 Tag (e)

6+	9.85 EUR
10+	8.84 EUR
100+	7.25 EUR
500+	6.16 EUR
1000+	4.94 EUR
5000+	4.73 EUR
10000+	4.68 EUR

Mindestbestellmenge: 6

IPI65R190C6XKSA1

Trans MOSFET N-CH 700V 20.2A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI65R190C6XKSA1

Description: MOSFET N-CH 650V 20.2A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V

auf Bestellung 480 Stücke:

Lieferzeit 21-28 Tag (e)

4+	8.4 EUR
50+	6.66 EUR
100+	5.71 EUR

Mindestbestellmenge: 4

IPI65R190C6XKSA1

IPI65R190C6XKSA1 THT N channel transistors

Produkt ist nicht verfügbar

IPI65R190CFD

MOSFET N-Ch 650V 17.5A I2PAK-3 CoolMOS CFD2

auf Bestellung 148 Stücke:

Lieferzeit 14-28 Tag (e)

6+	9.88 EUR
10+	8.87 EUR
100+	7.28 EUR
500+	6.16 EUR
1000+	5.85 EUR
3000+	5.69 EUR
5000+	5.49 EUR

Mindestbestellmenge: 6

IPI65R190CFDXKSA1

Trans MOSFET N-CH 650V 17.5A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI65R190CFDXKSA1

Description: MOSFET N-CH 650V 17.5A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 730µA
Supplier Device Package: PG-TO262-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V

Produkt ist nicht verfügbar

IPI65R190CFDXKSA1

IPI65R190CFDXKSA1 THT N channel transistors

Produkt ist nicht verfügbar

IPI65R190CFDXKSA1
Produktcode: 156343

Transistoren > MOSFET N-CH

Produkt ist nicht verfügbar

IPI65R190CFDXKSA2

MOSFET HIGH POWER_LEGACY

Produkt ist nicht verfügbar

IPI65R190CFDXKSA2

650V Power Transistor

Produkt ist nicht verfügbar

IPI65R190CFDXKSA2

Description: MOSFET N-CH 650V 17.5A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Supplier Device Package: PG-TO262-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V

Produkt ist nicht verfügbar

IPI65R280C6

MOSFET N-Ch 700V 13.8A I2PAK-3 CoolMOS C6

auf Bestellung 500 Stücke:

Lieferzeit 14-28 Tag (e)

IPI65R280C6

Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V

auf Bestellung 500 Stücke:

Lieferzeit 21-28 Tag (e)

260+	2.78 EUR

Mindestbestellmenge: 260

IPI65R280C6XKSA1

Trans MOSFET N-CH 650V 13.8A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI65R280C6XKSA1

Description: MOSFET N-CH 650V 13.8A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V

Produkt ist nicht verfügbar

IPI65R280C6XKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Case: PG-TO262-3
Drain-source voltage: 650V
Drain current: 13.8A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT

Produkt ist nicht verfügbar

IPI65R280C6XKSA1

Produkt ist nicht verfügbar

IPI65R280C6XKSA1

Description: MOSFET N-CH 650V 13.8A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V

auf Bestellung 1500 Stücke:

Lieferzeit 21-28 Tag (e)

260+	2.78 EUR

Mindestbestellmenge: 260

IPI65R280E6XKSA1

Description: MOSFET N-CH 650V 13.8A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V

Produkt ist nicht verfügbar

IPI65R280E6XKSA1

Produkt ist nicht verfügbar

IPI65R280E6XKSA1

Produkt ist nicht verfügbar

IPI65R280E6XKSA1

MOSFET N-Ch 700V 13.8A I2PAK-3

Produkt ist nicht verfügbar

IPI65R310CFD

MOSFET N-Ch 650V 11.4A I2PAK-3 CoolMOS CFD2

Produkt ist nicht verfügbar

IPI65R310CFD

Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 104.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 440µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V

auf Bestellung 10696 Stücke:

Lieferzeit 21-28 Tag (e)

336+	2.31 EUR

Mindestbestellmenge: 336

IPI65R310CFDXKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO262-3
Drain-source voltage: 650V
Drain current: 11.4A
On-state resistance: 0.31Ω
Type of transistor: N-MOSFET
Power dissipation: 104.2W
Polarisation: unipolar
Case: PG-TO262-3
Mounting: THT
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke

Produkt ist nicht verfügbar

IPI65R310CFDXKSA1

Description: MOSFET N-CH 650V 11.4A TO262-3

Produkt ist nicht verfügbar

IPI65R310CFDXKSA1

Produkt ist nicht verfügbar

IPI65R310CFDXKSA1

Description: MOSFET N-CH 650V 11.4A TO262-3

auf Bestellung 14500 Stücke:

Lieferzeit 21-28 Tag (e)

336+	2.23 EUR

Mindestbestellmenge: 336

IPI65R310CFDXKSA1700

Description: IPI65R310 - 650V AND 700V COOLMO

auf Bestellung 1500 Stücke:

Lieferzeit 21-28 Tag (e)

336+	2.34 EUR

Mindestbestellmenge: 336

IPI65R380C6

MOSFET N-Ch 700V 10.6A I2PAK-3 CoolMOS C6

auf Bestellung 355 Stücke:

Lieferzeit 14-28 Tag (e)

9+	6.37 EUR
10+	5.3 EUR
100+	4.21 EUR
250+	3.9 EUR
500+	3.64 EUR
1000+	2.91 EUR
2500+	2.86 EUR

Mindestbestellmenge: 9

IPI65R380C6XKSA1

Description: MOSFET N-CH 650V 10.6A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V

auf Bestellung 500 Stücke:

Lieferzeit 21-28 Tag (e)

5+	5.69 EUR
50+	4.57 EUR
100+	3.76 EUR
500+	3.18 EUR

Mindestbestellmenge: 5

IPI65R380C6XKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO262-3
Mounting: THT
Case: PG-TO262-3
Drain-source voltage: 650V
Drain current: 10.6A
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V

Produkt ist nicht verfügbar

IPI65R380C6XKSA1

Produkt ist nicht verfügbar

IPI65R380C6XKSA1

Trans MOSFET N-CH 700V 10.6A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI65R420CFD

MOSFET N-Ch 650V 8.7A I2PAK-3 CoolMOS CFD2

auf Bestellung 448 Stücke:

Lieferzeit 14-28 Tag (e)

IPI65R420CFD

Description: N-CHANNEL POWER MOSFET

auf Bestellung 10945 Stücke:

Lieferzeit 21-28 Tag (e)

395+	1.94 EUR

Mindestbestellmenge: 395

IPI65R420CFDXKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO262-3
Technology: CoolMOS™
Case: PG-TO262-3
Mounting: THT
On-state resistance: 0.42Ω
Power dissipation: 83.3W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 8.7A
Type of transistor: N-MOSFET

Produkt ist nicht verfügbar

IPI65R420CFDXKSA1

Produkt ist nicht verfügbar

IPI65R420CFDXKSA1

Description: MOSFET N-CH 650V 8.7A TO262

Produkt ist nicht verfügbar

IPI65R600C6

MOSFET N-Ch 700V 7.3A I2PAK-3 CoolMOS C6

auf Bestellung 358 Stücke:

Lieferzeit 14-28 Tag (e)

IPI65R600C6

Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V

Produkt ist nicht verfügbar

IPI65R600C6XKSA1

Description: MOSFET N-CH 650V 7.3A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V

Produkt ist nicht verfügbar

IPI65R600C6XKSA1

Trans MOSFET N-CH 700V 7.3A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI65R600C6XKSA1

Description: IPI65R600 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V

Produkt ist nicht verfügbar

IPI65R600C6XKSA1

IPI65R600C6XKSA1 THT N channel transistors

Produkt ist nicht verfügbar

IPI65R660CFD

Description: N-CHANNEL POWER MOSFET

auf Bestellung 10483 Stücke:

Lieferzeit 21-28 Tag (e)

424+	1.85 EUR

Mindestbestellmenge: 424

IPI65R660CFD

MOSFET N-Ch 650V 6A I2PAK-3 CoolMOS CFD2

Produkt ist nicht verfügbar

IPI65R660CFDXKSA1

Trans MOSFET N-CH 650V 6A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI65R660CFDXKSA1

Description: MOSFET N-CH 650V 6A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V

Produkt ist nicht verfügbar

IPI70N04S3-07

MOSFET N-Ch 40V 70A I2PAK-3 OptiMOS-T

Produkt ist nicht verfügbar

IPI70N04S3-07

Trans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI70N04S307AKSA1

Description: MOSFET N-CH 40V 80A TO262-3

Produkt ist nicht verfügbar

IPI70N04S4-06

MOSFET N-Ch 40V 70A I2PAK-3 OptiMOS-T2

auf Bestellung 902 Stücke:

Lieferzeit 14-28 Tag (e)

11+	4.91 EUR
13+	4.08 EUR
100+	3.25 EUR
250+	2.99 EUR
500+	2.73 EUR
1000+	2.23 EUR
5000+	2.15 EUR

Mindestbestellmenge: 11

IPI70N04S406AKSA1

Trans MOSFET N-CH 40V 70A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI70N04S406AKSA1

Description: MOSFET N-CH 40V 70A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V

auf Bestellung 500 Stücke:

Lieferzeit 21-28 Tag (e)

6+	4.89 EUR
10+	4.07 EUR
100+	3.24 EUR
500+	2.74 EUR

Mindestbestellmenge: 6

IPI70N10S3-12

MOSFET N-Ch 100V 70A I2PAK-3 OptiMOS-T

auf Bestellung 317 Stücke:

Lieferzeit 14-28 Tag (e)

IPI70N10S312AKSA1

Description: MOSFET N-CH 100V 70A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V

Produkt ist nicht verfügbar

IPI70N10S312AKSA1

MOSFET MOSFET_(75V 120V(

Produkt ist nicht verfügbar

IPI70N10S312AKSA1

Trans MOSFET N-CH 100V 70A Automotive 3-Pin TO-262 Tube

Produkt ist nicht verfügbar

IPI70N10S3L-12

Trans MOSFET N-CH 100V 70A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI70N10S3L-12

MOSFET N-Ch 100V 70A I2PAK-3 OptiMOS-T

auf Bestellung 1500 Stücke:

Lieferzeit 14-28 Tag (e)

IPI70N10S3L12AKSA1

Trans MOSFET N-CH 100V 70A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI70N10S3L12AKSA1

Description: MOSFET N-CH 100V 70A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V

auf Bestellung 2000 Stücke:

Lieferzeit 21-28 Tag (e)

452+	1.58 EUR

Mindestbestellmenge: 452

IPI70N10S3L12AKSA1

Produkt ist nicht verfügbar

IPI70N10SL-16

MOSFET N-Ch 100V 70A I2PAK-3 SIPMOS

auf Bestellung 466 Stücke:

Lieferzeit 14-28 Tag (e)

IPI70N10SL16AKSA1

Description: MOSFET N-CH 100V 70A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 25 V

auf Bestellung 9000 Stücke:

Lieferzeit 21-28 Tag (e)

181+	3.99 EUR

Mindestbestellmenge: 181

IPI70N10SL16AKSA1

Trans MOSFET N-CH 100V 70A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI70N10SL16AKSA1

Description: MOSFET N-CH 100V 70A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 25 V

Produkt ist nicht verfügbar

IPI70N12S311AKSA1

Description: MOSFET N-CH 120V 70A TO262-3

auf Bestellung 24000 Stücke:

Lieferzeit 21-28 Tag (e)

IPI70N12S311AKSA1

MOSFET N-CHANNEL 100+

Produkt ist nicht verfügbar

IPI70N12S3L12AKSA1

MOSFET N-CHANNEL 100+

Produkt ist nicht verfügbar

IPI70P04P4-09

MOSFET P-Ch -40V -70A I2PAK-3 OptiMOS-P2

Produkt ist nicht verfügbar

IPI70P04P409AKSA1

Description: MOSFET N-CH TO262-3

Produkt ist nicht verfügbar

IPI70R950CEXKSA1

Description: CONSUMER
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V

Produkt ist nicht verfügbar

IPI70R950CEXKSA1

MOSFET CONSUMER

auf Bestellung 82 Stücke:

Lieferzeit 14-28 Tag (e)

17+	3.12 EUR
19+	2.81 EUR
100+	2.18 EUR
500+	1.8 EUR

Mindestbestellmenge: 17

IPI77N06S3-09

Description: MOSFET N-CH 55V 77A TO-262

Produkt ist nicht verfügbar

IPI80CN10N G

Description: MOSFET N-CH 100V 13A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 13A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 12µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 50 V

Produkt ist nicht verfügbar

IPI80N03S4L-03

Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 25 V

Produkt ist nicht verfügbar

IPI80N03S4L-03

Trans MOSFET N-CH 30V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N03S4L-03

MOSFET N-Ch 30V 80A I2PAK-3 OptiMOS-T2

auf Bestellung 461 Stücke:

Lieferzeit 14-28 Tag (e)

13+	4.29 EUR
14+	3.85 EUR
100+	3.17 EUR
500+	2.47 EUR

Mindestbestellmenge: 13

IPI80N03S4L-04

Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active

Produkt ist nicht verfügbar

IPI80N03S4L-04

Trans MOSFET N-CH 30V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N03S4L-04

MOSFET N-Ch 30V 80A I2PAK-3 OptiMOS-T2

Produkt ist nicht verfügbar

IPI80N03S4L03AKSA1

Trans MOSFET N-CH 30V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 442 Stücke:

Lieferzeit 14-21 Tag (e)

127+	1.24 EUR
131+	1.15 EUR
134+	1.08 EUR
138+	1.01 EUR

Mindestbestellmenge: 127

IPI80N03S4L03AKSA1

Description: MOSFET N-CH 30V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 25 V

Produkt ist nicht verfügbar

IPI80N03S4L03AKSA1

Trans MOSFET N-CH 30V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N03S4L03AKSA1

MOSFET N-CHANNEL_30/40V

Produkt ist nicht verfügbar

IPI80N03S4L03AKSA1

Trans MOSFET N-CH 30V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 442 Stücke:

Lieferzeit 14-21 Tag (e)

124+	1.26 EUR
127+	1.19 EUR
131+	1.11 EUR
134+	1.04 EUR
138+	0.97 EUR

Mindestbestellmenge: 124

IPI80N03S4L04AKSA1

MOSFET N-CHANNEL_30/40V

Produkt ist nicht verfügbar

IPI80N03S4L04AKSA1

Description: MOSFET N-CH 30V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 45µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V

Produkt ist nicht verfügbar

IPI80N04S2-04

Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V

auf Bestellung 296 Stücke:

Lieferzeit 21-28 Tag (e)

296+	2.63 EUR

Mindestbestellmenge: 296

IPI80N04S204AKSA1

Trans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) TO-262

Produkt ist nicht verfügbar

IPI80N04S204AKSA1

Description: MOSFET N-CH 40V 80A TO262-3

Produkt ist nicht verfügbar

IPI80N04S204AKSA2

Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V

auf Bestellung 18500 Stücke:

Lieferzeit 21-28 Tag (e)

305+	2.57 EUR

Mindestbestellmenge: 305

IPI80N04S204AKSA2

Produkt ist nicht verfügbar

IPI80N04S2H4AKSA1

Trans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N04S2H4AKSA1

Description: MOSFET N-CH 40V 80A TO262-3

Produkt ist nicht verfügbar

IPI80N04S2H4AKSA2

Trans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N04S2H4AKSA2

Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V

Produkt ist nicht verfügbar

IPI80N04S3-03

Description: N-CHANNEL AUTOMOTIVE MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V

auf Bestellung 8000 Stücke:

Lieferzeit 21-28 Tag (e)

248+	2.98 EUR

Mindestbestellmenge: 248

IPI80N04S3-03

MOSFET N-Ch 40V 80A I2PAK-3 OptiMOS-T

Produkt ist nicht verfügbar

IPI80N04S3-04

MOSFET N-Ch 40V 80A I2PAK-3 OptiMOS-T

Produkt ist nicht verfügbar

IPI80N04S3-04

Description: N-CHANNEL POWER MOSFET
Packaging: Bulk

Produkt ist nicht verfügbar

IPI80N04S3-04

Trans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N04S3-06

Description: N-CHANNEL POWER MOSFET
Packaging: Bulk

auf Bestellung 1050 Stücke:

Lieferzeit 21-28 Tag (e)

671+	1.11 EUR

Mindestbestellmenge: 671

IPI80N04S3-06

MOSFET N-Ch 40V 80A I2PAK-3 OptiMOS-T

Produkt ist nicht verfügbar

IPI80N04S3-H4

MOSFET N-Ch 40V 80A I2PAK-3 OptiMOS-T

Produkt ist nicht verfügbar

IPI80N04S303AKSA1

Trans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N04S303AKSA1

Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V

Produkt ist nicht verfügbar

IPI80N04S304AKSA1

Description: MOSFET N-CH 40V 80A TO262-3

Produkt ist nicht verfügbar

IPI80N04S306AKSA1

Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 52µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V

Produkt ist nicht verfügbar

IPI80N04S306AKSA1

Trans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N04S3H4AKSA1

Trans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N04S3H4AKSA1

Description: MOSFET N-CH 40V 80A TO262-3

Produkt ist nicht verfügbar

IPI80N04S4-03

MOSFET N-Ch 40V 80A I2PAK-3 OptiMOS-T2

Produkt ist nicht verfügbar

IPI80N04S4-03

Description: IPI80N04 - 20V-40V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 53µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5260 pF @ 25 V

auf Bestellung 350 Stücke:

Lieferzeit 21-28 Tag (e)

350+	2.78 EUR

Mindestbestellmenge: 350

IPI80N04S4-04

MOSFET N-Ch 40V 80A I2PAK-3 OptiMOS-T2

auf Bestellung 72 Stücke:

Lieferzeit 14-28 Tag (e)

10+	5.28 EUR
12+	4.37 EUR
100+	3.48 EUR
250+	3.22 EUR
500+	2.94 EUR
1000+	2.49 EUR
2500+	2.38 EUR

Mindestbestellmenge: 10

IPI80N04S403AKSA1

Trans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N04S403AKSA1

Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 53µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5260 pF @ 25 V

auf Bestellung 500 Stücke:

Lieferzeit 21-28 Tag (e)

5+	6.11 EUR
10+	5.07 EUR
100+	4.03 EUR
500+	3.41 EUR

Mindestbestellmenge: 5

IPI80N04S403AKSA1

Description: INFINEON - IPI80N04S403AKSA1 - Leistungs-MOSFET, n-Kanal, 40 V, 80 A, 0.0032 ohm, TO-262, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 80A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 94W
Bauform - Transistor: TO-262
Anzahl der Pins: 3Pin(s)
Produktpalette: OptiMOS T2
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0032ohm

auf Bestellung 123 Stücke:

Lieferzeit 14-21 Tag (e)

IPI80N04S403BAKSA1

Description: MOSFET N-CH 40V TO263

Produkt ist nicht verfügbar

IPI80N04S404AKSA1

Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 25 V

Produkt ist nicht verfügbar

IPI80N04S404AKSA1

Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 25 V

auf Bestellung 281182 Stücke:

Lieferzeit 21-28 Tag (e)

283+	2.61 EUR

Mindestbestellmenge: 283

IPI80N04S404AKSA1

Trans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N04S4L-04

MOSFET N-Ch 40V 80A I2PAK-3 OptiMOS-T2

Produkt ist nicht verfügbar

IPI80N04S4L-04

Trans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N04S4L04AKSA1

Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V

Produkt ist nicht verfügbar

IPI80N04S4L04AKSA1

Trans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N06S2-07

Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N06S2-08

Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N06S207AKSA1

Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO262-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V

Produkt ist nicht verfügbar

IPI80N06S207AKSA1

Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N06S207AKSA1

Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO262-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V

auf Bestellung 600 Stücke:

Lieferzeit 21-28 Tag (e)

365+	1.97 EUR

Mindestbestellmenge: 365

IPI80N06S207AKSA2

Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N06S207AKSA2

Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V

auf Bestellung 500 Stücke:

Lieferzeit 21-28 Tag (e)

173+	4.18 EUR

Mindestbestellmenge: 173

IPI80N06S207AKSA2

MOSFET MOSFET_)40V 60V)

Produkt ist nicht verfügbar

IPI80N06S207AKSA2

Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V

Produkt ist nicht verfügbar

IPI80N06S208AKSA1

Description: MOSFET N-CH 55V 80A TO262-3

Produkt ist nicht verfügbar

IPI80N06S208AKSA1

Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-262

Produkt ist nicht verfügbar

IPI80N06S208AKSA2

MOSFET MOSFET_)40V 60V)

Produkt ist nicht verfügbar

IPI80N06S208AKSA2

Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N06S208AKSA2

Description: MOSFET N-CH 55V 80A TO262-3

Produkt ist nicht verfügbar

IPI80N06S2L05AKSA1

Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N06S2L05AKSA1

Description: MOSFET N-CH 55V 80A TO262-3

Produkt ist nicht verfügbar

IPI80N06S2L05AKSA2

Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N06S2L05AKSA2

Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V

auf Bestellung 500 Stücke:

Lieferzeit 21-28 Tag (e)

157+	4.59 EUR

Mindestbestellmenge: 157

IPI80N06S2L05AKSA2

MOSFET N-CHANNEL_55/60V

auf Bestellung 500 Stücke:

Lieferzeit 14-28 Tag (e)

IPI80N06S2L11AKSA1

Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-262

Produkt ist nicht verfügbar

IPI80N06S2L11AKSA1

Description: MOSFET N-CH 55V 80A TO262-3

Produkt ist nicht verfügbar

IPI80N06S2L11AKSA2

Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 40A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2V @ 93µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V

auf Bestellung 40500 Stücke:

Lieferzeit 21-28 Tag (e)

314+	2.3 EUR

Mindestbestellmenge: 314

IPI80N06S2L11AKSA2

MOSFET MOSFET_)40V 60V)

auf Bestellung 500 Stücke:

Lieferzeit 14-28 Tag (e)

IPI80N06S2L11AKSA2

Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N06S3-05

Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 63A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10760 pF @ 25 V

Produkt ist nicht verfügbar

IPI80N06S3-07

Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 51A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7768 pF @ 25 V

Produkt ist nicht verfügbar

IPI80N06S3L-05

Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 69A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 115µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13060 pF @ 25 V

Produkt ist nicht verfügbar

IPI80N06S3L-06

Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-262

Produkt ist nicht verfügbar

IPI80N06S3L-08

Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 43A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 55µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6475 pF @ 25 V

Produkt ist nicht verfügbar

IPI80N06S3L06XK

Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 56A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 80µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9417 pF @ 25 V

Produkt ist nicht verfügbar

IPI80N06S4-05

Trans MOSFET N-CH 60V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N06S4-07

MOSFET N-Ch 60V 80A I2PAK-3 OptiMOS-T2

auf Bestellung 250 Stücke:

Lieferzeit 14-28 Tag (e)

IPI80N06S4-07

Infineon

auf Bestellung 156500 Stücke:

Lieferzeit 21-28 Tag (e)

IPI80N06S405AKSA1

Trans MOSFET N-CH 60V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N06S405AKSA1

Description: MOSFET N-CH 60V 80A TO262-3

Produkt ist nicht verfügbar

IPI80N06S405AKSA2

Trans MOSFET N-CH 60V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N06S405AKSA2

Description: MOSFET N-CHANNEL_55/60V
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: PG-TO262-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 22000 Stücke:

Lieferzeit 21-28 Tag (e)

278+	2.59 EUR

Mindestbestellmenge: 278

IPI80N06S405AKSA2

MOSFET MOSFET

auf Bestellung 839 Stücke:

Lieferzeit 14-28 Tag (e)

10+	5.38 EUR
12+	4.47 EUR
100+	3.56 EUR
250+	3.28 EUR
500+	2.96 EUR
1000+	2.56 EUR
2500+	2.42 EUR

Mindestbestellmenge: 10

IPI80N06S405AKSA2

Description: MOSFET N-CHANNEL_55/60V
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IPI80N06S407AKSA1

Description: N-CHANNEL POWER MOSFET

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

IPI80N06S407AKSA1

Trans MOSFET N-CH 60V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N06S407AKSA2

Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 58A; Idm: 320A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 58A
Pulsed drain current: 320A
Power dissipation: 79W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 27nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

auf Bestellung 418 Stücke:

Lieferzeit 7-14 Tag (e)

28+	2.65 EUR
30+	2.39 EUR
36+	2 EUR
38+	1.89 EUR
250+	1.83 EUR

Mindestbestellmenge: 28

IPI80N06S407AKSA2

Description: MOSFET N-CH 60V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 500 Stücke:

Lieferzeit 21-28 Tag (e)

6+	4.81 EUR
10+	3.99 EUR
100+	3.18 EUR
500+	2.69 EUR

Mindestbestellmenge: 6

IPI80N06S407AKSA2

MOSFET MOSFET

auf Bestellung 5 Stücke:

Lieferzeit 14-28 Tag (e)

11+	4.84 EUR
13+	4 EUR
100+	3.2 EUR
250+	3.15 EUR
500+	2.65 EUR
1000+	2.18 EUR
5000+	2.11 EUR

Mindestbestellmenge: 11

IPI80N06S407AKSA2

Trans MOSFET N-CH 60V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N06S407AKSA2

auf Bestellung 418 Stücke:

Lieferzeit 14-21 Tag (e)

28+	2.65 EUR
30+	2.39 EUR
36+	2 EUR
38+	1.89 EUR
250+	1.83 EUR

Mindestbestellmenge: 28

IPI80N06S407AKSA2

Infineon

Trans MOSFET N-CH 60V 80A Automotive 3-Pin(3+Tab) TO-262 IPI80N06S407AKSA2 TIPI80N06S4-07
Anzahl je Verpackung: 10 Stücke

auf Bestellung 60 Stücke:

Lieferzeit 7-14 Tag (e)

20+	2.89 EUR

Mindestbestellmenge: 20

IPI80N06S4L-05

Trans MOSFET N-CH 60V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N06S4L-05

MOSFET N-Ch 60V 80A I2PAK-3 OptiMOS-T2

auf Bestellung 436 Stücke:

Lieferzeit 14-28 Tag (e)

IPI80N06S4L-07

MOSFET N-Ch 60V 80A I2PAK-3 OptiMOS-T2

auf Bestellung 206 Stücke:

Lieferzeit 14-28 Tag (e)

IPI80N06S4L05AKSA1

Trans MOSFET N-CH 60V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N06S4L05AKSA1

Description: MOSFET N-CH 60V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 80A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V

auf Bestellung 11300 Stücke:

Lieferzeit 21-28 Tag (e)

359+	2.02 EUR

Mindestbestellmenge: 359

IPI80N06S4L05AKSA2

Description: MOSFET N-CH TO262-3

Produkt ist nicht verfügbar

IPI80N06S4L07AKSA1

Trans MOSFET N-CH 60V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N06S4L07AKSA1

Description: MOSFET N-CH 60V 80A TO262-3

Produkt ist nicht verfügbar

IPI80N06S4L07AKSA2

Description: MOSFET N-CH 60V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V

auf Bestellung 9407 Stücke:

Lieferzeit 21-28 Tag (e)

347+	2.09 EUR

Mindestbestellmenge: 347

IPI80N06S4L07AKSA2

MOSFET MOSFET

auf Bestellung 34 Stücke:

Lieferzeit 14-28 Tag (e)

11+	5.17 EUR
12+	4.68 EUR
100+	3.74 EUR
500+	3.12 EUR
1000+	2.54 EUR
2500+	2.47 EUR

Mindestbestellmenge: 11

IPI80N06S4L07AKSA2

Description: MOSFET N-CH 60V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V

Produkt ist nicht verfügbar

IPI80N06S4L07AKSA2

Trans MOSFET N-CH 60V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N07S4-05

Description: N-CHANNEL POWER MOSFET

Produkt ist nicht verfügbar

IPI80N07S405AKSA1

Description: MOSFET N-CH TO262-3
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Part Status: Obsolete

Produkt ist nicht verfügbar

IPI80N07S405AKSA1

Description: MOSFET N-CH TO262-3
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Part Status: Obsolete

auf Bestellung 11000 Stücke:

Lieferzeit 21-28 Tag (e)

229+	3.11 EUR

Mindestbestellmenge: 229

IPI80N08S2-07

MOSFET N-Ch 75V 80A I2PAK-3 OptiMOS

auf Bestellung 500 Stücke:

Lieferzeit 14-28 Tag (e)

IPI80N08S207AKSA1

Trans MOSFET N-CH 75V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N08S207AKSA1

Description: MOSFET N-CH 75V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V

Produkt ist nicht verfügbar

IPI80N08S406AKSA1

Trans MOSFET N-CH 80V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80N08S406AKSA1

Description: MOSFET N-CH 80V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IPI80N08S406AKSA1

MOSFET N-CHANNEL 75/80V

Produkt ist nicht verfügbar

IPI80N08S406AKSA1

Description: MOSFET N-CH 80V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 7285 Stücke:

Lieferzeit 21-28 Tag (e)

96+	7.56 EUR

Mindestbestellmenge: 96

IPI80P03P4-05

P2 Power-Transistor Automotive AEC-Q101

Produkt ist nicht verfügbar

IPI80P03P4-05

MOSFET P-Ch -30V -80A I2PAK-3

auf Bestellung 496 Stücke:

Lieferzeit 14-28 Tag (e)

IPI80P03P4-05AKSA1

Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V

auf Bestellung 2596 Stücke:

Lieferzeit 21-28 Tag (e)

378+	2.05 EUR

Mindestbestellmenge: 378

IPI80P03P405AKSA1

Trans MOSFET P-CH 30V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80P03P405AKSA1

Description: MOSFET P-CH 30V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IPI80P03P4L-04

MOSFET P-Ch -30V -80A I2PAK-3 OptiMOS-P2

auf Bestellung 386 Stücke:

Lieferzeit 14-28 Tag (e)

IPI80P03P4L-04

Trans MOSFET P-CH 30V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80P03P4L-07

MOSFET P-Ch -30V -80A I2PAK-3 OptiMOS-P2

Produkt ist nicht verfügbar

IPI80P03P4L-07

Trans MOSFET P-CH 30V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80P03P4L04AKSA1

Description: MOSFET P-CH 30V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 2V @ 253µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V

Produkt ist nicht verfügbar

IPI80P03P4L04AKSA1

Trans MOSFET P-CH 30V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80P03P4L07AKSA1

Trans MOSFET P-CH 30V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80P03P4L07AKSA1

Description: MOSFET P-CH 30V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V

Produkt ist nicht verfügbar

IPI80P04P4-05

MOSFET P-Ch -40V -80A I2PAK-3 OptiMOS-P2

Produkt ist nicht verfügbar

IPI80P04P4-07

MOSFET P-Ch -40V -80A I2PAK-3 OptiMOS-P2

Produkt ist nicht verfügbar

IPI80P04P405AKSA1

Description: MOSFET P-CH TO262-3

Produkt ist nicht verfügbar

IPI80P04P407AKSA1

Description: MOSFET P-CH TO262-3

Produkt ist nicht verfügbar

IPI80P04P4L-04

MOSFET P-Ch -40V -80A I2PAK-3 OptiMOS-P2

Produkt ist nicht verfügbar

IPI80P04P4L-06

MOSFET P-Ch -40V -80A I2PAK-3 OptiMOS-P2

Produkt ist nicht verfügbar

IPI80P04P4L-08

MOSFET P-Ch -40V -80A I2PAK-3 OptiMOS-P2

Produkt ist nicht verfügbar

IPI80P04P4L04AKSA1

Trans MOSFET P-CH 40V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80P04P4L04AKSA1

Description: MOSFET P-CH TO262-3

Produkt ist nicht verfügbar

IPI80P04P4L06AKSA1

Description: MOSFET P-CH TO262-3

Produkt ist nicht verfügbar

IPI80P04P4L06AKSA1

Trans MOSFET P-CH 40V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80P04P4L08AKSA1

Trans MOSFET P-CH 40V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI80P04P4L08AKSA1

Description: MOSFET P-CH TO262-3

Produkt ist nicht verfügbar

IPI90N04S4-02

MOSFET N-Ch 40V 90A I2PAK-3 OptiMOS-T2

auf Bestellung 495 Stücke:

Lieferzeit 14-28 Tag (e)

8+	7.07 EUR
10+	6.42 EUR
25+	5.59 EUR
100+	4.78 EUR
250+	4.73 EUR
500+	4.16 EUR
1000+	3.41 EUR

Mindestbestellmenge: 8

IPI90N04S402AKSA1

Description: MOSFET N-CH 40V 90A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9430 pF @ 25 V

auf Bestellung 465 Stücke:

Lieferzeit 21-28 Tag (e)

4+	7.18 EUR
10+	6.02 EUR
100+	4.87 EUR

Mindestbestellmenge: 4

IPI90N04S402AKSA1

Trans MOSFET N-CH 40V 90A Automotive 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 12500 Stücke:

Lieferzeit 14-21 Tag (e)

IPI90N04S402BSAKSA1

Description: MOSFET N-CH 40V TO263

Produkt ist nicht verfügbar

IPI90N04S402BSAKSA1

Customer specific part: IPI90N04S4-02 for Brose

Produkt ist nicht verfügbar

IPI90N04S402TATMA1

Description: MOSFET

Produkt ist nicht verfügbar

IPI90N06S4-04

Trans MOSFET N-CH 60V 90A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI90N06S404AKSA1

Description: MOSFET N-CH 60V 90A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V

Produkt ist nicht verfügbar

IPI90N06S404AKSA1

Trans MOSFET N-CH 60V 90A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI90N06S404AKSA2

Trans MOSFET N-CH 60V 90A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI90N06S404AKSA2

Description: MOSFET N-CHANNEL_55/60V
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 25000 Stücke:

Lieferzeit 21-28 Tag (e)

229+	3.15 EUR

Mindestbestellmenge: 229

IPI90N06S4L-04

MOSFET N-Ch 60V 90A I2PAK-3 OptiMOS-T2

auf Bestellung 488 Stücke:

Lieferzeit 14-28 Tag (e)

IPI90N06S4L04AKSA1

Description: MOSFET N-CH 60V 90A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: PG-TO262-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V

Produkt ist nicht verfügbar

IPI90N06S4L04AKSA1

Trans MOSFET N-CH 60V 90A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI90N06S4L04AKSA2

Description: MOSFET N-CH 60V 90A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V

Produkt ist nicht verfügbar

IPI90N06S4L04AKSA2

Trans MOSFET N-CH 60V 90A Automotive 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI90N06S4L04AKSA2

Description: MOSFET N-CH 60V 90A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V

auf Bestellung 36830 Stücke:

Lieferzeit 21-28 Tag (e)

208+	3.48 EUR

Mindestbestellmenge: 208

IPI90N06S4L04AKSA2

MOSFET MOSFET

auf Bestellung 376 Stücke:

Lieferzeit 14-28 Tag (e)

7+	7.8 EUR
10+	7.02 EUR
100+	5.75 EUR
500+	4.81 EUR
1000+	4.5 EUR
2500+	4.26 EUR
5000+	4.24 EUR

Mindestbestellmenge: 7

IPI90R1K0C3

Description: N-CHANNEL POWER MOSFET

auf Bestellung 11990 Stücke:

Lieferzeit 21-28 Tag (e)

IPI90R1K0C3

MOSFET N-Ch 900V 5.7A I2PAK-3 CoolMOS C3

Produkt ist nicht verfügbar

IPI90R1K0C3XKSA1

Description: MOSFET N-CH 900V 5.7A TO262-3

Produkt ist nicht verfügbar

IPI90R1K2C3

MOSFET N-Ch 900V 5.1A I2PAK-3 CoolMOS C3

auf Bestellung 847 Stücke:

Lieferzeit 14-28 Tag (e)

IPI90R1K2C3
Produktcode: 101850

Transistoren > MOSFET N-CH
ZCODE: 8541290010

Produkt ist nicht verfügbar

IPI90R1K2C3XKSA1

Description: MOSFET N-CH 900V 5.1A TO262-3

auf Bestellung 1300 Stücke:

Lieferzeit 21-28 Tag (e)

440+	1.73 EUR

Mindestbestellmenge: 440

IPI90R1K2C3XKSA1

Trans MOSFET N-CH 900V 5.1A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI90R1K2C3XKSA1

Description: MOSFET N-CH 900V 5.1A TO-262

Produkt ist nicht verfügbar

IPI90R1K2C3XKSA2

Description: MOSFET N-CH 900V 5.1A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V

auf Bestellung 1890 Stücke:

Lieferzeit 21-28 Tag (e)

341+	2.11 EUR

Mindestbestellmenge: 341

IPI90R1K2C3XKSA2

Description: INFINEON - IPI90R1K2C3XKSA2 - Leistungs-MOSFET, n-Kanal, 900 V, 5.1 A, 0.94 ohm, TO-262, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 900
Dauer-Drainstrom Id: 5.1
Rds(on)-Messspannung Vgs: 10
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 83
Bauform - Transistor: TO-262
Anzahl der Pins: 3
Produktpalette: CoolMOS C3
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.94
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 3
SVHC: No SVHC (08-Jul-2021)

auf Bestellung 446 Stücke:

Lieferzeit 14-21 Tag (e)

IPI90R1K2C3XKSA2

MOSFET LOW POWER_LEGACY

Produkt ist nicht verfügbar

IPI90R1K2C3XKSA2

Description: MOSFET N-CH 900V 5.1A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V

Produkt ist nicht verfügbar

IPI90R1K2C3XKSA2

Trans MOSFET N-CH 900V 5.1A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI90R340C3

MOSFET N-Ch 900V 15A I2PAK-3 CoolMOS C3

Produkt ist nicht verfügbar

IPI90R340C3XKSA1

Trans MOSFET N-CH 900V 15A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI90R340C3XKSA1

MOSFET LOW POWER_LEGACY

Produkt ist nicht verfügbar

IPI90R340C3XKSA1

Description: MOSFET N-CH 900V 15A TO262-3

Produkt ist nicht verfügbar

IPI90R340C3XKSA2

MOSFET LOW POWER_LEGACY

Produkt ist nicht verfügbar

IPI90R340C3XKSA2

Description: MOSFET N-CH 900V 15A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V

auf Bestellung 500 Stücke:

Lieferzeit 21-28 Tag (e)

2+	13.31 EUR
10+	11.16 EUR
100+	9.03 EUR
500+	8.03 EUR

Mindestbestellmenge: 2

IPI90R340C3XKSA2

Power Mosfet

Produkt ist nicht verfügbar

IPI90R340C3XKSA2

Power Mosfet

auf Bestellung 15000 Stücke:

Lieferzeit 14-21 Tag (e)

IPI90R500C3

MOSFET N-Ch 900V 11A I2PAK-3 CoolMOS C3

auf Bestellung 344 Stücke:

Lieferzeit 14-28 Tag (e)

IPI90R500C3XKSA1

Description: MOSFET N-CH 900V 11A TO262-3

Produkt ist nicht verfügbar

IPI90R500C3XKSA2

Trans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-262 Tube

auf Bestellung 6500 Stücke:

Lieferzeit 14-21 Tag (e)

IPI90R500C3XKSA2

Description: MOSFET N-CH 900V 11A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 740µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V

auf Bestellung 200 Stücke:

Lieferzeit 21-28 Tag (e)

4+	8.63 EUR
10+	7.25 EUR
100+	5.87 EUR

Mindestbestellmenge: 4

IPI90R800C3

Trans MOSFET N-CH 900V 6.9A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI90R800C3

Description: MOSFET N-CH 900V 6.9A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 460µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V

Produkt ist nicht verfügbar

IPI90R800C3

MOSFET N-Ch 900V 6.9A I2PAK-3 CoolMOS C3

auf Bestellung 496 Stücke:

Lieferzeit 14-28 Tag (e)

IPI90R800C3XKSA1

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhanced

auf Bestellung 404 Stücke:

Lieferzeit 14-21 Tag (e)

53+	1.36 EUR
57+	1.27 EUR

Mindestbestellmenge: 53

IPI90R800C3XKSA1

auf Bestellung 404 Stücke:

Lieferzeit 7-14 Tag (e)

53+	1.36 EUR
57+	1.27 EUR

Mindestbestellmenge: 53

IPI90R800C3XKSA1

Trans MOSFET N-CH 900V 6.9A 3-Pin(3+Tab) TO-262 Tube

Produkt ist nicht verfügbar

IPI90R800C3XKSA1