Produkte > IPI
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| IPI020N06N | Infineon Technologies | Description: MOSFET N-CH 60V 29A TO262-3 | auf Bestellung 33 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI020N06NAKSA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 214W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: THT Kind of channel: enhancement Technology: OptiMOS™ | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI020N06NAKSA1 | Infineon Technologies | MOSFET N-Ch 60V 120A I2PAK-3 | auf Bestellung 491 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI020N06NAKSA1 | Infineon Technologies | Description: MOSFET N-CH 60V 29A/120A TO262 Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: PG-TO262-3-1 Vgs(th) (Max) @ Id: 2.8V @ 143µA Power Dissipation (Max): 3W (Ta), 214W (Tc) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI023NE7N3 G | Infineon Technologies | MOSFETs N-Ch 75V 100A I2PAK-3 OptiMOS 3 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI023NE7N3 G | Infineon Technologies | Description: MOSFET N-CH 75V 120A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 273µA Supplier Device Package: PG-TO262-3 Part Status: Obsolete Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI023NE7N3G | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Part Status: Active Supplier Device Package: PG-TO262-3 Vgs(th) (Max) @ Id: 3.8V @ 273µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Bulk | auf Bestellung 5746 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI023NE7N3GAKSA1 | Infineon Technologies | Trans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-262 Tube | auf Bestellung 7246 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPI023NE7N3GAKSA1 | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IPI023NE7N3GAKSA1 - IPI023NE7 OPTLMOS N-CHANNEL POWER MOSFET euEccn: TBC hazardous: false productTraceability: Yes-Date/Lot Code usEccn: TBC SVHC: No SVHC (27-Jun-2024) | auf Bestellung 946 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPI024N06N3 G | Infineon Technologies | MOSFET N-Ch 60V 120A I2PAK-3 OptiMOS 3 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI024N06N3 G E8174 | Infineon Technologies | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI024N06N3GHKSA1 | Infineon Technologies | MOSFET MV POWER MOS | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI024N06N3GHKSA1 | Infineon Technologies | Description: MOSFET N-CH 60V 120A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 196µA Supplier Device Package: PG-TO262-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI024N06N3GXKSA1 | Infineon Technologies | Description: MOSFET N-CH 60V 120A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 196µA Supplier Device Package: PG-TO262-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI024N06N3GXKSA1 | Infineon Technologies | Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-262 Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI024N06N3GXKSA1 | Infineon Technologies | MOSFETs N-Ch 60V 120A I2PAK-3 | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI024N06N3GXKSA1 | Infineon Technologies | Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-262 Tube | auf Bestellung 23500 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPI028N08N3GHKSA1 | Infineon Technologies | Description: MOSFET N-CH 80V 100A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 270µA Supplier Device Package: PG-TO262-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI029N06N | Infineon Technologies | MOSFETs N-Ch 60V 100A I2PAK-3 | auf Bestellung 369 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI029N06NAKSA1 | Infineon Technologies | Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube | auf Bestellung 1085 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPI029N06NAKSA1 | Infineon Technologies | Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI029N06NAKSA1 | Infineon Technologies | Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPI029N06NAKSA1 | INFINEON | Description: INFINEON - IPI029N06NAKSA1 - Leistungs-MOSFET, n-Kanal, 60 V, 100 A, 2700 µohm, TO-262, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 10V Verlustleistung: 136W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-262 Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 2.8V Drain-Source-Durchgangswiderstand: 2700µohm | auf Bestellung 181 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPI029N06NAKSA1 | Infineon Technologies | Description: MOSFET N-CH 60V 24A/100A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V Power Dissipation (Max): 3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 75µA Supplier Device Package: PG-TO262-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V | auf Bestellung 476 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI029N06NAKSA1 | Infineon Technologies | Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPI029N06NAKSA1 | Infineon Technologies | Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI029N06NAKSA1 | Infineon Technologies | Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPI029N06NAKSA1 | Infineon Technologies | Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube | auf Bestellung 237500 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPI029N06NAKSA1 | Infineon Technologies | MOSFETs N-Ch 60V 100A I2PAK-3 | auf Bestellung 876 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI030N10N3 G | Infineon Technologies | MOSFET N-Ch 100V 100A I2PAK-3 OptiMOS 3 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI030N10N3GHKSA1 | Infineon Technologies | Description: MOSFET N-CH 100V 100A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 275µA Supplier Device Package: PG-TO262-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI030N10N3GXKSA1 | Infineon Technologies | MOSFET N-Ch 100V 100A I2PAK-3 | auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI030N10N3GXKSA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 300W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Kind of channel: enhancement Technology: OptiMOS™ 3 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI030N10N3GXKSA1 | Infineon Technologies | Description: MOSFET N-CH 100V 100A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 275µA Supplier Device Package: PG-TO262-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI032N06N3 G Produktcode: 110398
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| Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar
| Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IPI032N06N3 G | Infineon Technologies | Description: MOSFET N-CH 60V 120A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 118µA Supplier Device Package: PG-TO262-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI032N06N3 G | Infineon Technologies | MOSFET N-Ch 60V 120A I2PAK-3 OptiMOS 3 | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI032N06N3GAKSA1 | Infineon Technologies | Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-262 Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI032N06N3GAKSA1 | Infineon Technologies | MOSFET N-Ch 60V 120A I2PAK-3 OptiMOS 3 | auf Bestellung 469 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI032N06N3GAKSA1 | Infineon Technologies | Description: MOSFET N-CH 60V 120A TO262-3 Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 118µA Supplier Device Package: PG-TO262-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V | auf Bestellung 871 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI032N06N3GAKSA1 | Infineon Technologies | Description: MOSFET N-CH 60V 120A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 118µA Supplier Device Package: PG-TO262-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI032N06N3GE8214AKSA1 | Infineon Technologies | Description: MOSFET N-CH 60V TO262-3 Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO262-3-1 Vgs(th) (Max) @ Id: 4V @ 118µA Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI034NE7N3 G | Infineon Technologies | Description: MOSFET N-CH 75V 100A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 155µA Supplier Device Package: PG-TO262-3 Part Status: Obsolete Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 37.5 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI034NE7N3 G | Infineon Technologies | MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3 | auf Bestellung 488 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI034NE7N3G | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 155µA Supplier Device Package: PG-TO262-3 Part Status: Active Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 37.5 V | auf Bestellung 234 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI034NE7N3G | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IPI034NE7N3G - IPI034NE7 POWER FIELD-EFFECT TRANSISTOR tariffCode: 85412100 euEccn: TBC hazardous: false productTraceability: No usEccn: TBC SVHC: No SVHC (27-Jun-2024) | auf Bestellung 234 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPI037N06L3GHKSA1 | Infineon Technologies | Description: MOSFET N-CH 60V 90A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 93µA Supplier Device Package: PG-TO262-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI037N08N3 G E8174 | Infineon Technologies | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI037N08N3GHKSA1 | Infineon Technologies | Description: MOSFET N-CH 80V 100A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.75mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 155µA Supplier Device Package: PG-TO262-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI037N08N3GXKSA1 | Infineon Technologies | MOSFET N-Ch 80V 100A I2PAK-3 | auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI037N08N3GXKSA1 | Infineon Technologies | Description: MOSFET N-CH 80V 100A TO262-3 Rds On (Max) @ Id, Vgs: 3.75mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Obsolete Supplier Device Package: PG-TO262-3 Vgs(th) (Max) @ Id: 3.5V @ 155µA Power Dissipation (Max): 214W (Tc) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI03N03LA | Infineon Technologies | Description: MOSFET N-CH 25V 80A TO262-3 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI040N06N3GHKSA1 | Infineon Technologies | Description: MOSFET N-CH 60V 90A TO262-3 Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO262-3 Vgs(th) (Max) @ Id: 4V @ 90µA Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI040N06N3GXKSA1 | Infineon Technologies | MOSFETs N-Ch 60V 90A I2PAK-3 | auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI040N06N3GXKSA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO262-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Power dissipation: 188W Case: PG-TO262-3 On-state resistance: 4mΩ Mounting: THT Kind of channel: enhancement Technology: OptiMOS™ 3 Gate-source voltage: ±20V | auf Bestellung 133 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPI040N06N3GXKSA1 | Infineon Technologies | Description: MOSFET N-CH 60V 90A TO262-3 Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO262-3 Vgs(th) (Max) @ Id: 4V @ 90µA Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI040N06N3GXKSA1 | Infineon Technologies | Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-262 Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI041N12N3 G | Infineon Technologies | MOSFETs N-Ch 120V 120A I2PAK-3 OptiMOS 3 | auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI041N12N3G | Rochester Electronics, LLC | Description: IPI041N12 - 12V-300V N-CHANNEL P | auf Bestellung 493 Stücke: Lieferzeit 10-14 Tag (e) | Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI041N12N3GAKSA1 | Infineon Technologies | Trans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262 Tube | auf Bestellung 430 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPI041N12N3GAKSA1 | Infineon Technologies | Trans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262 Tube | auf Bestellung 430 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPI041N12N3GAKSA1 | Infineon Technologies | MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI041N12N3GAKSA1 | Infineon Technologies | Description: MOSFET N-CH 120V 120A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-TO262-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V | auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI041N12N3GAKSA1 | Infineon Technologies | Trans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262 Tube | auf Bestellung 28500 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPI045N10N3 G | Infineon Technologies | MOSFETs N-Ch 100V 100A I2PAK-3 OptiMOS 3 | auf Bestellung 2147 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI045N10N3 G | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TO262-3-1 Vgs(th) (Max) @ Id: 3.5V @ 150µA Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 137A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Packaging: Bulk | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI045N10N3GXK | Infineon Technologies | Description: MOSFET N-CH 100V 137A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 137A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 150µA Supplier Device Package: PG-TO262-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI045N10N3GXKSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-262 Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI045N10N3GXKSA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 214W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI045N10N3GXKSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-262 Tube | auf Bestellung 470 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPI045N10N3GXKSA1 | Infineon Technologies | Description: MOSFET N-CH 100V 100A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 150µA Supplier Device Package: PG-TO262-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V | auf Bestellung 1341 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI045N10N3GXKSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-262 Tube | auf Bestellung 470 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPI045N10N3GXKSA1 | Infineon Technologies | MOSFETs N-Ch 100V 100A I2PAK-3 OptiMOS 3 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI04CN10N G | Infineon Technologies | Description: MOSFET N-CH 100V 100A TO262-3 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI04N03LA | Infineon Technologies | Description: MOSFET N-CH 25V 80A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 55A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2V @ 60µA Supplier Device Package: PG-TO262-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3877 pF @ 15 V | auf Bestellung 836 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI04N03LA | Infineon Technologies | Description: MOSFET N-CH 25V 80A TO262-3 Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TO262-3 Vgs(th) (Max) @ Id: 2V @ 60µA Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 55A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3877 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI051N15N5AKSA1 | Infineon Technologies | Description: MV POWER MOS Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 60A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 264µA Supplier Device Package: PG-TO262-3-1 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 75 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI051N15N5AKSA1 | Infineon Technologies | MOSFETs TRENCH >=100V | auf Bestellung 454 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI051N15N5AKSA1 | Infineon Technologies | Trans MOSFET N-CH 150V 120A 3-Pin(3+Tab) TO-262 Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI052NE7N3 G | Infineon Technologies | MOSFET N-Ch 75V 80A I2PAK-3 OptiMOS 3 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI052NE7N3 G | Infineon Technologies | Description: MOSFET N-CH 75V 80A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 91µA Supplier Device Package: PG-TO262-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 37.5 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI052NE7N3G | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 91µA Supplier Device Package: PG-TO262-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 37.5 V | auf Bestellung 396 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI057N08N3 G | Infineon Technologies | Description: MOSFET N-CH 80V 80A TO262-3 Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: PG-TO262-3 Vgs(th) (Max) @ Id: 3.5V @ 90µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI05CN10N G | Infineon Technologies | Description: MOSFET N-CH 100V 100A TO262-3 Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO262-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI05N03LA | Infineon Technologies | Description: MOSFET N-CH 25V 80A TO262-3 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI06CN10N G | Infineon Technologies | Description: MOSFET N-CH 100V 100A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 4V @ 180µA Supplier Device Package: PG-TO262-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI06N03LA | Infineon Technologies | Description: MOSFET N-CH 25V 50A TO262-3 Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PG-TO262-3 Vgs(th) (Max) @ Id: 2V @ 40µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI06N03LA | Infineon Technologies | MOSFET N-Channel MOSFETs (20 V to 300 V) OptiMOS | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI070N06N G | Infineon Technologies | Description: MOSFET N-CH 60V 80A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 80A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 180µA Supplier Device Package: PG-TO262-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI070N06NG | Infineon Technologies | MOSFET N-KANAL POWER MOS | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI070N08N3 G | Infineon Technologies | Description: MOSFET N-CH 80V 80A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 73A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 73µA Supplier Device Package: PG-TO262-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI072N10N3 G | Infineon Technologies | MOSFET N-Ch 100V 80A I2PAK-3 OptiMOS 3 | auf Bestellung 292 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI072N10N3 G | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TO262-3-1 Vgs(th) (Max) @ Id: 3.5V @ 90µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Bulk | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI072N10N3G | Infineon Technologies | Description: OPTLMOS N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: PG-TO262-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V | auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI072N10N3GXK | Infineon Technologies | Description: MOSFET N-CH 100V 80A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Obsolete Supplier Device Package: PG-TO262-3 Vgs(th) (Max) @ Id: 3.5V @ 90µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI072N10N3GXKSA1 | Infineon Technologies | Description: MOSFET N-CH 100V 80A TO262-3 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: PG-TO262-3 Vgs(th) (Max) @ Id: 3.5V @ 90µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel | auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI072N10N3GXKSA1 | Infineon Technologies | Description: MOSFET N-CH 100V 80A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: PG-TO262-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI075N15N3 | Infineon Technologies | Description: N-CHANNEL POWER MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI075N15N3 G | INFINEON | 08+ PLUS26.. | auf Bestellung 250 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI075N15N3G | Infineon technologies | auf Bestellung 30 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH |