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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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IXYH50N65C3H1 Produktcode: 189326
2
zu Favoriten hinzufügen
Lieblingsprodukt
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 Transistoren > Transistoren IGBT, LeistungsmoduleGehäuse: TO-247AD Kollektor-Emitter-Spannung Vces, V: 650 В Sättigungsspannung Vce, V: 2,1 В Kollektorstrom Ic bei 25°C, A: 130 А Kollektorstrom Ic bei 100°C, A: 50 А Ein-/Ausschaltzeit td(on)/td(off) bei 100-150°C, ns: 22/80 |
auf Bestellung: 15 St.
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AIGB50N65F5ATMA1 | Infineon Technologies |
Description: IGBT NPT 650V 50A TO263-3-2 |
auf Bestellung 980 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKB50N65DF5ATMA1 | Infineon Technologies |
Description: IGBT NPT 650V 50A TO263-3-2 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKB50N65DF5ATMA1 | Infineon Technologies |
IGBTs DISCRETE SWITCHES |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKB50N65DF5ATMA1 | Infineon Technologies |
Description: IGBT NPT 650V 50A TO263-3-2 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKB50N65DH5ATMA1 | Infineon Technologies |
IGBTs DISCRETE SWITCHES |
auf Bestellung 382 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKBE50N65RF5ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 96A TO263-7 |
auf Bestellung 474 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKW50N65DF5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH 650V TO247-3-41 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO247-3-41 IGBT Type: Trench Td (on/off) @ 25°C: 21ns/156ns Switching Energy: 490µJ (on), 140µJ (off) Test Condition: 400V, 25A, 12Ohm, 15V Gate Charge: 1018 nC Grade: Automotive Part Status: Active Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 270 W Qualification: AEC-Q101 |
auf Bestellung 129 Stücke: Lieferzeit 10-14 Tag (e) |
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BGH50N65HF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Pulsed collector current: 200A Turn-on time: 54ns Turn-off time: 256ns Gate charge: 308nC Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 57 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BGH50N65HS1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Pulsed collector current: 200A Turn-on time: 54ns Turn-off time: 256ns Gate charge: 308nC Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BGH50N65ZF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-4 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Pulsed collector current: 200A Turn-on time: 54ns Turn-off time: 476ns Gate charge: 308nC Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BIDW50N65T | Bourns |
IGBTs IGBT Discrete 650V, 50A in TO-247 |
auf Bestellung 2979 Stücke: Lieferzeit 10-14 Tag (e) |
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CXG50N65HSEU | Createk Microelectronics |
CXG50N65HSEU CREATEK Transistor IGBT ; 650V; 30V; 100A; 200A; 378W; 4,0V~5,5V; 200nC; -55°C~150°C; TCXG50n65hseu |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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ENGNTBL050N65GN1TXG | onsemi |
Description: GAN FET, 650V, 39M, TOLL |
auf Bestellung 1200 Stücke: Lieferzeit 10-14 Tag (e) |
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ENGNTBL050N65GN1TXG | onsemi |
Description: GAN FET, 650V, 39M, TOLL |
auf Bestellung 2319 Stücke: Lieferzeit 10-14 Tag (e) |
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ENGNTBT050N65GN1TXG | onsemi |
Description: GAN FET, 650V, 39M, TOLT |
auf Bestellung 2387 Stücke: Lieferzeit 10-14 Tag (e) |
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ENGNTBT050N65GN1TXG | onsemi |
Description: GAN FET, 650V, 39M, TOLT |
auf Bestellung 1200 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH150N65F-F155 | onsemi |
Description: MOSFET N-CH 650V 24A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Power Dissipation (Max): 298W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.4mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3737 pF @ 100 V |
auf Bestellung 232 Stücke: Lieferzeit 10-14 Tag (e) |
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FCMT250N65S3 | onsemi |
MOSFETs SUPERFET3 650V 12A 250 mOhm |
auf Bestellung 1061 Stücke: Lieferzeit 10-14 Tag (e) |
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FCMT250N65S3 | onsemi |
Description: MOSFET N-CH 650V 12A POWER88 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FCMT250N65S3 | onsemi |
Description: MOSFET N-CH 650V 12A POWER88 |
auf Bestellung 5925 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP150N65F | onsemi |
MOSFETs N-Channel SuperFET II FRFET MOSFET |
auf Bestellung 759 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP150N65F | onsemi |
Description: MOSFET N-CH 650V 24A TO220-3 |
auf Bestellung 768 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF150N65F | onsemi |
MOSFETs SuperFET2 150 mOhm 650V FRFET |
auf Bestellung 948 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF150N65F | onsemi |
Description: MOSFET N-CH 650V 14.9A TO220F |
auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF250N65S3L1-F154 | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFE |
auf Bestellung 2966 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF250N65S3R0L-F154 | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFE Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tj) Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 290µA Supplier Device Package: TO-220F-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V |
auf Bestellung 1830 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF250N65S3R0L-F154 | onsemi |
MOSFETs SUPERFET3 650V TO220F PKG |
auf Bestellung 863 Stücke: Lieferzeit 10-14 Tag (e) |
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IGB50N65H5ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 80A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 23ns/173ns Switching Energy: 1.59mJ (on), 750µJ (off) Test Condition: 400V, 50A, 12Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 270 W |
auf Bestellung 3429 Stücke: Lieferzeit 10-14 Tag (e) |
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IGB50N65H5ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 80A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 23ns/173ns Switching Energy: 1.59mJ (on), 750µJ (off) Test Condition: 400V, 50A, 12Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 270 W |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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IGB50N65S5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 63A; 135W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 63A Power dissipation: 135W Case: D2PAK Gate-emitter voltage: ±20V Mounting: SMD Kind of package: reel; tape Pulsed collector current: 200A Turn-on time: 50ns Turn-off time: 199ns Gate charge: 0.12µC |
auf Bestellung 326 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IGB50N65S5ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 80A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/139ns Switching Energy: 1.23mJ (on), 740µJ (off) Test Condition: 400V, 50A, 8.2Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 270 W |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
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IGB50N65S5ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 80A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/139ns Switching Energy: 1.23mJ (on), 740µJ (off) Test Condition: 400V, 50A, 8.2Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 270 W |
auf Bestellung 7877 Stücke: Lieferzeit 10-14 Tag (e) |
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IGW50N65F5AXKSA1 | Infineon Technologies |
Description: IGBT TRENCH 650V 80A TO247-3 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Td (on/off) @ 25°C: 21ns/156ns Switching Energy: 490µJ (on), 140µJ (off) Test Condition: 400V, 25A, 12Ohm, 15V Gate Charge: 108 nC Grade: Automotive Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 270 W Qualification: AEC-Q101 |
auf Bestellung 2773 Stücke: Lieferzeit 10-14 Tag (e) |
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IGW50N65F5FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 270W; TO247-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 270W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: F5 |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IGW50N65F5FKSA1 | Infineon |
IGW50N65F5FKSA1 IGBT 650V 80A 305W TIGW50n65f5 |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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IGW50N65F5FKSA1 | Infineon Technologies |
Description: IGBT 650V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 21ns/175ns Switching Energy: 490µJ (on), 160µJ (off) Test Condition: 400V, 25A, 12Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 305 W |
auf Bestellung 227 Stücke: Lieferzeit 10-14 Tag (e) |
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IGW50N65H5 | Infineon Technologies |
IGBTs ENGINEERING SAMPLES TRENCHSTOP-5 IGBT |
auf Bestellung 506 Stücke: Lieferzeit 10-14 Tag (e) |
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IGW50N65H5FKSA1 | Infineon Technologies |
IGBTs IGBT PRODUCTS |
auf Bestellung 504 Stücke: Lieferzeit 10-14 Tag (e) |
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IGW50N65H5FKSA1 | Infineon Technologies |
Description: IGBT 650V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 21ns/180ns Switching Energy: 520µJ (on), 180µJ (off) Test Condition: 400V, 25A, 12Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 305 W |
auf Bestellung 625 Stücke: Lieferzeit 10-14 Tag (e) |
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IHW50N65R5 | Infineon Technologies |
IGBTs IGBT PRODUCTS TrenchStop 5 |
auf Bestellung 256 Stücke: Lieferzeit 10-14 Tag (e) |
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IHW50N65R5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 141W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Pulsed collector current: 150A Turn-on time: 50ns Turn-off time: 218ns Gate charge: 230nC Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
auf Bestellung 73 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IHW50N65R5XKSA1 | Infineon Technologies |
IGBTs IGBT PRODUCTS TrenchStop 5 |
auf Bestellung 286 Stücke: Lieferzeit 10-14 Tag (e) |
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IHW50N65R5XKSA1 | Infineon Technologies |
Description: IGBT 650V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 95 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 26ns/220ns Switching Energy: 740µJ (on), 180µJ (off) Test Condition: 400V, 25A, 8Ohm, 15V Gate Charge: 230 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 282 W |
auf Bestellung 121 Stücke: Lieferzeit 10-14 Tag (e) |
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IHW50N65R6XKSA1 | Infineon Technologies |
IGBTs 650 V, 50 A IGBT with monolithically integrated diode in TO-247 package |
auf Bestellung 408 Stücke: Lieferzeit 10-14 Tag (e) |
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IHW50N65R6XKSA1 | Infineon Technologies |
Description: IGBT 650V 100A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 108 ns Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 50A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 21ns/261ns Switching Energy: 1.5mJ (on), 660µJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 199 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 251 W |
auf Bestellung 181 Stücke: Lieferzeit 10-14 Tag (e) |
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IKFW50N65EH5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 59A HSIP247 |
auf Bestellung 217 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW50N65EH5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 138W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: H5 Pulsed collector current: 200A Turn-on time: 54ns Turn-off time: 207ns Gate charge: 0.12µC Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 191 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IKW50N65EH5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH 650V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 81 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Td (on/off) @ 25°C: 25ns/172ns Switching Energy: 1.5mJ (on), 500µJ (off) Test Condition: 400V, 50A, 12Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 275 W |
auf Bestellung 152 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW50N65EH5XKSA1 | Infineon Technologies |
IGBTs INDUSTRY |
auf Bestellung 193 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW50N65ES5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 60.5A Power dissipation: 137W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Pulsed collector current: 200A Turn-on time: 47ns Turn-off time: 161ns Gate charge: 0.12µC Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IKW50N65ES5XKSA1 | Infineon Technologies | IGBTs INDUSTRY |
auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW50N65ET7XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 50A TO247-3 |
auf Bestellung 197 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW50N65F5FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 305W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: F5 Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 72 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IKW50N65F5FKSA1 | Infineon Technologies |
IGBTs IGBT PRODUCTS |
auf Bestellung 1466 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW50N65F5FKSA1 | Infineon Technologies |
Description: IGBT 650V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 52 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 21ns/175ns Switching Energy: 490µJ (on), 160µJ (off) Test Condition: 400V, 25A, 12Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 305 W |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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| IKW50N65F5FKSA1 | Infineon |
IKW50N65F5FKSA1 IKW50N65F5 IGBT 650V 80A 305W PG-TO247-3 Транзистори |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW50N65H5 | Infineon Technologies |
IGBTs INDUSTRY |
auf Bestellung 743 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW50N65H5FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 305W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: H5 Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IKW50N65H5FKSA1 | Infineon |
IKW50N65H5 80A; 650V; 305W; IGBT w/ Diode TIKW50n65h5 |
auf Bestellung 97 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXYH50N65C3H1 Produktcode: 189326
2
zu Favoriten hinzufügen
Lieblingsprodukt
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Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247AD
Kollektor-Emitter-Spannung Vces, V: 650 В
Sättigungsspannung Vce, V: 2,1 В
Kollektorstrom Ic bei 25°C, A: 130 А
Kollektorstrom Ic bei 100°C, A: 50 А
Ein-/Ausschaltzeit td(on)/td(off) bei 100-150°C, ns: 22/80
Gehäuse: TO-247AD
Kollektor-Emitter-Spannung Vces, V: 650 В
Sättigungsspannung Vce, V: 2,1 В
Kollektorstrom Ic bei 25°C, A: 130 А
Kollektorstrom Ic bei 100°C, A: 50 А
Ein-/Ausschaltzeit td(on)/td(off) bei 100-150°C, ns: 22/80
auf Bestellung: 15 St.
- 15 St. - Lieferzeit 21-28 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 19.19 EUR |
| AIGB50N65F5ATMA1 |
|
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 50A TO263-3-2
Description: IGBT NPT 650V 50A TO263-3-2
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.9 EUR |
| 10+ | 7.97 EUR |
| 100+ | 5.75 EUR |
| 500+ | 5.37 EUR |
| AIKB50N65DF5ATMA1 |
|
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 50A TO263-3-2
Description: IGBT NPT 650V 50A TO263-3-2
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 4.25 EUR |
| 2000+ | 4.08 EUR |
| AIKB50N65DF5ATMA1 |
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Hersteller: Infineon Technologies
IGBTs DISCRETE SWITCHES
IGBTs DISCRETE SWITCHES
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.47 EUR |
| 10+ | 7 EUR |
| 100+ | 5.01 EUR |
| 500+ | 4.57 EUR |
| 1000+ | 4.32 EUR |
| AIKB50N65DF5ATMA1 |
|
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 50A TO263-3-2
Description: IGBT NPT 650V 50A TO263-3-2
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.44 EUR |
| 10+ | 7.63 EUR |
| 100+ | 5.46 EUR |
| 500+ | 4.99 EUR |
| AIKB50N65DH5ATMA1 |
|
Hersteller: Infineon Technologies
IGBTs DISCRETE SWITCHES
IGBTs DISCRETE SWITCHES
auf Bestellung 382 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.47 EUR |
| 10+ | 7 EUR |
| 100+ | 5.21 EUR |
| 500+ | 4.57 EUR |
| 1000+ | 4.32 EUR |
| AIKBE50N65RF5ATMA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 96A TO263-7
Description: IGBT TRENCH FS 650V 96A TO263-7
auf Bestellung 474 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 19.48 EUR |
| 10+ | 13.36 EUR |
| 100+ | 10.13 EUR |
| AIKW50N65DF5XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/156ns
Switching Energy: 490µJ (on), 140µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 1018 nC
Grade: Automotive
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Qualification: AEC-Q101
Description: IGBT TRENCH 650V TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/156ns
Switching Energy: 490µJ (on), 140µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 1018 nC
Grade: Automotive
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Qualification: AEC-Q101
auf Bestellung 129 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.04 EUR |
| 30+ | 8.65 EUR |
| 120+ | 7.25 EUR |
| BGH50N65HF1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 54ns
Turn-off time: 256ns
Gate charge: 308nC
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 54ns
Turn-off time: 256ns
Gate charge: 308nC
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
| BGH50N65HS1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 54ns
Turn-off time: 256ns
Gate charge: 308nC
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 54ns
Turn-off time: 256ns
Gate charge: 308nC
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
| BGH50N65ZF1 |
|
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 54ns
Turn-off time: 476ns
Gate charge: 308nC
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 54ns
Turn-off time: 476ns
Gate charge: 308nC
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
| BIDW50N65T |
|
Hersteller: Bourns
IGBTs IGBT Discrete 650V, 50A in TO-247
IGBTs IGBT Discrete 650V, 50A in TO-247
auf Bestellung 2979 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.17 EUR |
| 10+ | 7.27 EUR |
| 100+ | 6.07 EUR |
| 600+ | 5.21 EUR |
| CXG50N65HSEU |
|
Hersteller: Createk Microelectronics
CXG50N65HSEU CREATEK Transistor IGBT ; 650V; 30V; 100A; 200A; 378W; 4,0V~5,5V; 200nC; -55°C~150°C; TCXG50n65hseu
CXG50N65HSEU CREATEK Transistor IGBT ; 650V; 30V; 100A; 200A; 378W; 4,0V~5,5V; 200nC; -55°C~150°C; TCXG50n65hseu
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 7.1 EUR |
| ENGNTBL050N65GN1TXG |
|
Hersteller: onsemi
Description: GAN FET, 650V, 39M, TOLL
Description: GAN FET, 650V, 39M, TOLL
auf Bestellung 1200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1200+ | 8.14 EUR |
| ENGNTBL050N65GN1TXG |
|
Hersteller: onsemi
Description: GAN FET, 650V, 39M, TOLL
Description: GAN FET, 650V, 39M, TOLL
auf Bestellung 2319 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 19.15 EUR |
| 10+ | 13.15 EUR |
| 50+ | 10.58 EUR |
| 100+ | 9.96 EUR |
| ENGNTBT050N65GN1TXG |
|
Hersteller: onsemi
Description: GAN FET, 650V, 39M, TOLT
Description: GAN FET, 650V, 39M, TOLT
auf Bestellung 2387 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 19.15 EUR |
| 10+ | 13.15 EUR |
| 50+ | 10.58 EUR |
| 100+ | 9.96 EUR |
| ENGNTBT050N65GN1TXG |
|
Hersteller: onsemi
Description: GAN FET, 650V, 39M, TOLT
Description: GAN FET, 650V, 39M, TOLT
auf Bestellung 1200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1200+ | 8.14 EUR |
| FCH150N65F-F155 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.4mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3737 pF @ 100 V
Description: MOSFET N-CH 650V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.4mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3737 pF @ 100 V
auf Bestellung 232 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.14 EUR |
| 30+ | 8.19 EUR |
| 60+ | 7.49 EUR |
| 120+ | 6.89 EUR |
| FCMT250N65S3 |
|
Hersteller: onsemi
MOSFETs SUPERFET3 650V 12A 250 mOhm
MOSFETs SUPERFET3 650V 12A 250 mOhm
auf Bestellung 1061 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.25 EUR |
| 10+ | 7.38 EUR |
| 100+ | 5.43 EUR |
| 500+ | 4.82 EUR |
| 1000+ | 4.32 EUR |
| FCMT250N65S3 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 12A POWER88
Description: MOSFET N-CH 650V 12A POWER88
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 3.84 EUR |
| FCMT250N65S3 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 12A POWER88
Description: MOSFET N-CH 650V 12A POWER88
auf Bestellung 5925 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.89 EUR |
| 10+ | 7.27 EUR |
| 50+ | 5.71 EUR |
| 100+ | 5.21 EUR |
| 500+ | 4.71 EUR |
| FCP150N65F |
|
Hersteller: onsemi
MOSFETs N-Channel SuperFET II FRFET MOSFET
MOSFETs N-Channel SuperFET II FRFET MOSFET
auf Bestellung 759 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.88 EUR |
| 10+ | 6.37 EUR |
| 100+ | 5.7 EUR |
| FCP150N65F |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO220-3
Description: MOSFET N-CH 650V 24A TO220-3
auf Bestellung 768 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.26 EUR |
| 10+ | 8.26 EUR |
| 50+ | 6.56 EUR |
| 100+ | 6 EUR |
| 500+ | 5.13 EUR |
| FCPF150N65F |
|
Hersteller: onsemi
MOSFETs SuperFET2 150 mOhm 650V FRFET
MOSFETs SuperFET2 150 mOhm 650V FRFET
auf Bestellung 948 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.15 EUR |
| 10+ | 6.5 EUR |
| 100+ | 5.95 EUR |
| 500+ | 5.87 EUR |
| FCPF150N65F |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 14.9A TO220F
Description: MOSFET N-CH 650V 14.9A TO220F
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.52 EUR |
| 10+ | 8.45 EUR |
| 50+ | 6.71 EUR |
| 100+ | 6.14 EUR |
| 500+ | 5.28 EUR |
| FCPF250N65S3L1-F154 |
|
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Description: POWER MOSFET, N-CHANNEL, SUPERFE
auf Bestellung 2966 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.01 EUR |
| 10+ | 5.95 EUR |
| 50+ | 4.65 EUR |
| 100+ | 4.22 EUR |
| 500+ | 3.49 EUR |
| FCPF250N65S3R0L-F154 |
|
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tj)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 290µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tj)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 290µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
auf Bestellung 1830 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.37 EUR |
| 10+ | 6.24 EUR |
| 50+ | 4.89 EUR |
| 100+ | 4.45 EUR |
| 500+ | 3.69 EUR |
| FCPF250N65S3R0L-F154 |
|
Hersteller: onsemi
MOSFETs SUPERFET3 650V TO220F PKG
MOSFETs SUPERFET3 650V TO220F PKG
auf Bestellung 863 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.92 EUR |
| 10+ | 4.65 EUR |
| 100+ | 4.24 EUR |
| 500+ | 3.52 EUR |
| 1000+ | 3.5 EUR |
| 2000+ | 3.45 EUR |
| IGB50N65H5ATMA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/173ns
Switching Energy: 1.59mJ (on), 750µJ (off)
Test Condition: 400V, 50A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/173ns
Switching Energy: 1.59mJ (on), 750µJ (off)
Test Condition: 400V, 50A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
auf Bestellung 3429 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.87 EUR |
| 10+ | 4.49 EUR |
| 100+ | 3.13 EUR |
| 500+ | 2.56 EUR |
| IGB50N65H5ATMA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/173ns
Switching Energy: 1.59mJ (on), 750µJ (off)
Test Condition: 400V, 50A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/173ns
Switching Energy: 1.59mJ (on), 750µJ (off)
Test Condition: 400V, 50A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 2.36 EUR |
| 2000+ | 2.2 EUR |
| 3000+ | 2.12 EUR |
| IGB50N65S5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 63A; 135W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 63A
Power dissipation: 135W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 200A
Turn-on time: 50ns
Turn-off time: 199ns
Gate charge: 0.12µC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 63A; 135W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 63A
Power dissipation: 135W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 200A
Turn-on time: 50ns
Turn-off time: 199ns
Gate charge: 0.12µC
auf Bestellung 326 Stücke:
Lieferzeit 14-21 Tag (e)
| IGB50N65S5ATMA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/139ns
Switching Energy: 1.23mJ (on), 740µJ (off)
Test Condition: 400V, 50A, 8.2Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 270 W
Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/139ns
Switching Energy: 1.23mJ (on), 740µJ (off)
Test Condition: 400V, 50A, 8.2Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 270 W
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 2.5 EUR |
| 2000+ | 2.33 EUR |
| 3000+ | 2.25 EUR |
| 5000+ | 2.21 EUR |
| IGB50N65S5ATMA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/139ns
Switching Energy: 1.23mJ (on), 740µJ (off)
Test Condition: 400V, 50A, 8.2Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 270 W
Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/139ns
Switching Energy: 1.23mJ (on), 740µJ (off)
Test Condition: 400V, 50A, 8.2Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 270 W
auf Bestellung 7877 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.28 EUR |
| 10+ | 4.76 EUR |
| 100+ | 3.32 EUR |
| 500+ | 2.71 EUR |
| IGW50N65F5AXKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/156ns
Switching Energy: 490µJ (on), 140µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 108 nC
Grade: Automotive
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Qualification: AEC-Q101
Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/156ns
Switching Energy: 490µJ (on), 140µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 108 nC
Grade: Automotive
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Qualification: AEC-Q101
auf Bestellung 2773 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 78+ | 7.76 EUR |
| IGW50N65F5FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 270W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 270W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
| IGW50N65F5FKSA1 |
|
Hersteller: Infineon
IGW50N65F5FKSA1 IGBT 650V 80A 305W TIGW50n65f5
IGW50N65F5FKSA1 IGBT 650V 80A 305W TIGW50n65f5
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 19.33 EUR |
| IGW50N65F5FKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/175ns
Switching Energy: 490µJ (on), 160µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 305 W
Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/175ns
Switching Energy: 490µJ (on), 160µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 305 W
auf Bestellung 227 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.92 EUR |
| 30+ | 4.95 EUR |
| 120+ | 4.08 EUR |
| IGW50N65H5 |
|
Hersteller: Infineon Technologies
IGBTs ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
IGBTs ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
auf Bestellung 506 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.79 EUR |
| 10+ | 5.09 EUR |
| 100+ | 3.8 EUR |
| 480+ | 3.19 EUR |
| 1200+ | 2.95 EUR |
| 2640+ | 2.76 EUR |
| IGW50N65H5FKSA1 |
|
Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS
IGBTs IGBT PRODUCTS
auf Bestellung 504 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.6 EUR |
| 10+ | 3.92 EUR |
| 100+ | 3.25 EUR |
| 480+ | 2.76 EUR |
| IGW50N65H5FKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/180ns
Switching Energy: 520µJ (on), 180µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 305 W
Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/180ns
Switching Energy: 520µJ (on), 180µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 305 W
auf Bestellung 625 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.85 EUR |
| 30+ | 4.31 EUR |
| 120+ | 3.53 EUR |
| 510+ | 2.95 EUR |
| IHW50N65R5 |
|
Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS TrenchStop 5
IGBTs IGBT PRODUCTS TrenchStop 5
auf Bestellung 256 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.98 EUR |
| 10+ | 5.21 EUR |
| 100+ | 3.92 EUR |
| 480+ | 3.27 EUR |
| 1200+ | 3.01 EUR |
| 2640+ | 2.83 EUR |
| IHW50N65R5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 150A
Turn-on time: 50ns
Turn-off time: 218ns
Gate charge: 230nC
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 150A
Turn-on time: 50ns
Turn-off time: 218ns
Gate charge: 230nC
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
| IHW50N65R5XKSA1 |
|
Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS TrenchStop 5
IGBTs IGBT PRODUCTS TrenchStop 5
auf Bestellung 286 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.71 EUR |
| 10+ | 4.25 EUR |
| 100+ | 3.5 EUR |
| 480+ | 2.89 EUR |
| 1200+ | 2.87 EUR |
| IHW50N65R5XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 26ns/220ns
Switching Energy: 740µJ (on), 180µJ (off)
Test Condition: 400V, 25A, 8Ohm, 15V
Gate Charge: 230 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 282 W
Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 26ns/220ns
Switching Energy: 740µJ (on), 180µJ (off)
Test Condition: 400V, 25A, 8Ohm, 15V
Gate Charge: 230 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 282 W
auf Bestellung 121 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.96 EUR |
| 30+ | 4.38 EUR |
| 120+ | 3.59 EUR |
| IHW50N65R6XKSA1 |
|
Hersteller: Infineon Technologies
IGBTs 650 V, 50 A IGBT with monolithically integrated diode in TO-247 package
IGBTs 650 V, 50 A IGBT with monolithically integrated diode in TO-247 package
auf Bestellung 408 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.58 EUR |
| 10+ | 4.19 EUR |
| 100+ | 3.42 EUR |
| 480+ | 2.84 EUR |
| 1200+ | 2.78 EUR |
| IHW50N65R6XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT 650V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 108 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/261ns
Switching Energy: 1.5mJ (on), 660µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 199 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 251 W
Description: IGBT 650V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 108 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/261ns
Switching Energy: 1.5mJ (on), 660µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 199 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 251 W
auf Bestellung 181 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.83 EUR |
| 30+ | 4.31 EUR |
| 120+ | 3.52 EUR |
| IKFW50N65EH5XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 59A HSIP247
Description: IGBT TRENCH FS 650V 59A HSIP247
auf Bestellung 217 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.21 EUR |
| 30+ | 9.42 EUR |
| 120+ | 8.14 EUR |
| IKW50N65EH5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 138W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Pulsed collector current: 200A
Turn-on time: 54ns
Turn-off time: 207ns
Gate charge: 0.12µC
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 138W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Pulsed collector current: 200A
Turn-on time: 54ns
Turn-off time: 207ns
Gate charge: 0.12µC
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 191 Stücke:
Lieferzeit 14-21 Tag (e)
| IKW50N65EH5XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 81 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 25ns/172ns
Switching Energy: 1.5mJ (on), 500µJ (off)
Test Condition: 400V, 50A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 275 W
Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 81 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 25ns/172ns
Switching Energy: 1.5mJ (on), 500µJ (off)
Test Condition: 400V, 50A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 275 W
auf Bestellung 152 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.21 EUR |
| 30+ | 6.33 EUR |
| 120+ | 5.26 EUR |
| IKW50N65EH5XKSA1 |
|
Hersteller: Infineon Technologies
IGBTs INDUSTRY
IGBTs INDUSTRY
auf Bestellung 193 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.86 EUR |
| 10+ | 6.14 EUR |
| 100+ | 5.05 EUR |
| 480+ | 4.55 EUR |
| IKW50N65ES5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 47ns
Turn-off time: 161ns
Gate charge: 0.12µC
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 47ns
Turn-off time: 161ns
Gate charge: 0.12µC
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
| IKW50N65ES5XKSA1 |
Hersteller: Infineon Technologies
IGBTs INDUSTRY
IGBTs INDUSTRY
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.86 EUR |
| 10+ | 6.64 EUR |
| 100+ | 5.21 EUR |
| 480+ | 4.61 EUR |
| IKW50N65ET7XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 50A TO247-3
Description: IGBT TRENCH FS 650V 50A TO247-3
auf Bestellung 197 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.9 EUR |
| 30+ | 6.72 EUR |
| 120+ | 5.58 EUR |
| IKW50N65F5FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 72 Stücke:
Lieferzeit 14-21 Tag (e)
| IKW50N65F5FKSA1 |
|
Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS
IGBTs IGBT PRODUCTS
auf Bestellung 1466 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.84 EUR |
| 10+ | 5.53 EUR |
| 100+ | 4.57 EUR |
| 480+ | 4.44 EUR |
| 1200+ | 3.97 EUR |
| IKW50N65F5FKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/175ns
Switching Energy: 490µJ (on), 160µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 305 W
Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/175ns
Switching Energy: 490µJ (on), 160µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 305 W
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.17 EUR |
| 30+ | 5.7 EUR |
| 120+ | 4.71 EUR |
| IKW50N65F5FKSA1 |
|
Hersteller: Infineon
IKW50N65F5FKSA1 IKW50N65F5 IGBT 650V 80A 305W PG-TO247-3 Транзистори
IKW50N65F5FKSA1 IKW50N65F5 IGBT 650V 80A 305W PG-TO247-3 Транзистори
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.57 EUR |
| IKW50N65H5 |
|
Hersteller: Infineon Technologies
IGBTs INDUSTRY
IGBTs INDUSTRY
auf Bestellung 743 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.86 EUR |
| 10+ | 7.14 EUR |
| 100+ | 5.32 EUR |
| 480+ | 4.44 EUR |
| 1200+ | 4.13 EUR |
| 2640+ | 3.89 EUR |
| IKW50N65H5FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| IKW50N65H5FKSA1 |
|
Hersteller: Infineon
IKW50N65H5 80A; 650V; 305W; IGBT w/ Diode TIKW50n65h5
IKW50N65H5 80A; 650V; 305W; IGBT w/ Diode TIKW50n65h5
auf Bestellung 97 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 16.72 EUR |