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Foto | Bezeichnung | Hersteller | Beschreibung |
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IXYH50N65C3H1 Produktcode: 189326
zu Favoriten hinzufügen
Lieblingsprodukt
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![]() Gehäuse: TO-247AD Vces: 650 V Vce: 2,1 V Ic 25: 130 A Ic 100: 50 A td(on)/td(off) 100-150 Grad: 22/80 |
auf Bestellung 22 Stück: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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AIGB50N65F5ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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AIGB50N65F5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V |
auf Bestellung 1090 Stücke: Lieferzeit 10-14 Tag (e) |
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AIGB50N65H5ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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AIGB50N65H5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V |
auf Bestellung 2535 Stücke: Lieferzeit 10-14 Tag (e) |
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AIGW50N65F5XKSA1 | Infineon Technologies |
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auf Bestellung 176 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKB50N65DF5ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKB50N65DF5ATMA1 | Infineon Technologies |
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auf Bestellung 785 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKB50N65DF5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V |
auf Bestellung 2200 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKB50N65DH5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V |
auf Bestellung 3980 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKB50N65DH5ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKB50N65DH5ATMA1 | Infineon Technologies |
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auf Bestellung 382 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKBE50N65RF5ATMA1 | Infineon Technologies |
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auf Bestellung 57 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKBE50N65RF5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO263-7-U04 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 16.8ns/136ns Switching Energy: 120µJ (on), 90µJ (off) Test Condition: 400V, 25A, 9Ohm, 15V Gate Charge: 108 nC Grade: Automotive Current - Collector (Ic) (Max): 96 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 326 W Qualification: AEC-Q101 |
auf Bestellung 519 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKW50N65DF5XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO247-3-41 IGBT Type: Trench Td (on/off) @ 25°C: 21ns/156ns Switching Energy: 490µJ (on), 140µJ (off) Test Condition: 400V, 25A, 12Ohm, 15V Gate Charge: 1018 nC Part Status: Active Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 270 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 199 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKW50N65DH5XKSA1 | Infineon Technologies |
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auf Bestellung 427 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKW50N65RF5XKSA1 | Infineon Technologies |
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auf Bestellung 196 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKW50N65RF5XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/156ns Switching Energy: 310µJ (on), 120µJ (off) Test Condition: 400V, 25A, 12Ohm, 15V Gate Charge: 109 nC Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 250 W Qualification: AEC-Q101 |
auf Bestellung 190 Stücke: Lieferzeit 10-14 Tag (e) |
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BGH50N65HF1 | BASiC SEMICONDUCTOR |
![]() Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 308nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: Field Stop; SiC SBD; Trench Turn-on time: 54ns Turn-off time: 256ns |
auf Bestellung 58 Stücke: Lieferzeit 14-21 Tag (e) |
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BGH50N65HF1 | BASiC SEMICONDUCTOR |
![]() Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 308nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: Field Stop; SiC SBD; Trench Turn-on time: 54ns Turn-off time: 256ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 58 Stücke: Lieferzeit 7-14 Tag (e) |
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BGH50N65HS1 | BASiC SEMICONDUCTOR |
![]() Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 308nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: Field Stop; SiC SBD; Trench Turn-on time: 54ns Turn-off time: 256ns |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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BGH50N65HS1 | BASiC SEMICONDUCTOR |
![]() Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 308nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: Field Stop; SiC SBD; Trench Turn-on time: 54ns Turn-off time: 256ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 34 Stücke: Lieferzeit 7-14 Tag (e) |
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BGH50N65ZF1 | BASiC SEMICONDUCTOR |
![]() Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 308nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: Field Stop; SiC SBD; Trench Turn-on time: 54ns Turn-off time: 476ns |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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BGH50N65ZF1 | BASiC SEMICONDUCTOR |
![]() Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 308nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: Field Stop; SiC SBD; Trench Turn-on time: 54ns Turn-off time: 476ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 26 Stücke: Lieferzeit 7-14 Tag (e) |
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BIDW50N65T | Bourns |
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auf Bestellung 2391 Stücke: Lieferzeit 10-14 Tag (e) |
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BIDW50N65T | Bourns Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 37.5 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A Supplier Device Package: TO-247 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/125ns Switching Energy: 3mJ (on), 1.1mJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 123 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 416 W |
auf Bestellung 2853 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH150N65F-F155 | onsemi / Fairchild |
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auf Bestellung 397 Stücke: Lieferzeit 10-14 Tag (e) |
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FCMT250N65S3 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.2mA Supplier Device Package: Power88 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V |
auf Bestellung 96000 Stücke: Lieferzeit 10-14 Tag (e) |
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FCMT250N65S3 | onsemi |
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auf Bestellung 1681 Stücke: Lieferzeit 10-14 Tag (e) |
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FCMT250N65S3 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.2mA Supplier Device Package: Power88 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V |
auf Bestellung 96000 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP150N65F | onsemi / Fairchild |
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auf Bestellung 774 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF150N65F | onsemi / Fairchild |
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auf Bestellung 995 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF150N65F | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.4mA Supplier Device Package: TO-220F-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3737 pF @ 100 V |
auf Bestellung 1990 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF250N65S3R0L-F154 | onsemi |
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auf Bestellung 907 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF250N65S3R0L-F154 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tj) Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 290µA Supplier Device Package: TO-220F-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V |
auf Bestellung 1835 Stücke: Lieferzeit 10-14 Tag (e) |
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IGB50N65H5ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 23ns/173ns Switching Energy: 1.59mJ (on), 750µJ (off) Test Condition: 400V, 50A, 12Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 270 W |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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IGB50N65H5ATMA1 | Infineon Technologies |
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auf Bestellung 1467 Stücke: Lieferzeit 10-14 Tag (e) |
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IGB50N65H5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 23ns/173ns Switching Energy: 1.59mJ (on), 750µJ (off) Test Condition: 400V, 50A, 12Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 270 W |
auf Bestellung 4990 Stücke: Lieferzeit 10-14 Tag (e) |
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IGB50N65S5ATMA1 | Infineon Technologies |
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auf Bestellung 893 Stücke: Lieferzeit 10-14 Tag (e) |
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IGB50N65S5ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/139ns Switching Energy: 1.23mJ (on), 740µJ (off) Test Condition: 400V, 50A, 8.2Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 270 W |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IGB50N65S5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/139ns Switching Energy: 1.23mJ (on), 740µJ (off) Test Condition: 400V, 50A, 8.2Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 270 W |
auf Bestellung 1219 Stücke: Lieferzeit 10-14 Tag (e) |
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IGW50N65F5FKSA1 | Infineon |
![]() Anzahl je Verpackung: 5 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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IGW50N65F5FKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 21ns/175ns Switching Energy: 490µJ (on), 160µJ (off) Test Condition: 400V, 25A, 12Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 305 W |
auf Bestellung 199 Stücke: Lieferzeit 10-14 Tag (e) |
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IHW50N65R5 | Infineon Technologies |
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auf Bestellung 56 Stücke: Lieferzeit 10-14 Tag (e) |
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IHW50N65R5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 141W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 230nC Kind of package: tube Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Technology: TRENCHSTOP™ 5 Turn-on time: 50ns Turn-off time: 218ns |
auf Bestellung 214 Stücke: Lieferzeit 14-21 Tag (e) |
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IHW50N65R5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 141W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 230nC Kind of package: tube Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Technology: TRENCHSTOP™ 5 Turn-on time: 50ns Turn-off time: 218ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 214 Stücke: Lieferzeit 7-14 Tag (e) |
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IHW50N65R6XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 108 ns Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 50A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 21ns/261ns Switching Energy: 1.5mJ (on), 660µJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 199 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 251 W |
auf Bestellung 228 Stücke: Lieferzeit 10-14 Tag (e) |
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IKFW50N65DH5XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 68 ns Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A Supplier Device Package: PG-HSIP247-3-2 IGBT Type: Trench Td (on/off) @ 25°C: 23ns/131ns Switching Energy: 1.46mJ (on), 630µJ (off) Test Condition: 400V, 50A, 12.2Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 59 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 124 W |
auf Bestellung 230 Stücke: Lieferzeit 10-14 Tag (e) |
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IKFW50N65EH5XKSA1 | Infineon Technologies |
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auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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IKFW50N65EH5XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 52 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: PG-HSIP247-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/138ns Switching Energy: 1.2mJ (on), 400µJ (off) Test Condition: 400V, 40A, 15.1Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 59 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 124 W |
auf Bestellung 105 Stücke: Lieferzeit 10-14 Tag (e) |
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IKQ150N65EH7XKSA1 | Infineon Technologies |
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auf Bestellung 340 Stücke: Lieferzeit 10-14 Tag (e) |
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IKQ150N65EH7XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-46 Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 84 ns Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 150A IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 45ns/341ns Switching Energy: 5.8mJ (on), 5.4mJ (off) Test Condition: 400V, 150A, 10Ohm, 15V Gate Charge: 301 nC Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 600 A Power - Max: 621 W |
auf Bestellung 132 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW50N65EH5XKSA1 | Infineon Technologies |
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auf Bestellung 233 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW50N65ES5 | Infineon Technologies |
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auf Bestellung 179 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW50N65ES5XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Td (on/off) @ 25°C: 20ns/127ns Switching Energy: 1.23mJ (on), 550µJ (off) Test Condition: 400V, 50A, 8.2Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 274 W |
auf Bestellung 189 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW50N65ET7XKSA1 | Infineon Technologies |
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auf Bestellung 256 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW50N65ET7XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 93 ns Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 50A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 26ns/350ns Switching Energy: 1.2mJ (on), 850µJ (off) Test Condition: 400V, 50A, 9Ohm, 15V Gate Charge: 290 nC Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 273 W Qualification: AEC-Q101 |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW50N65F5FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 305W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Manufacturer series: F5 Technology: TRENCHSTOP™ 5 |
auf Bestellung 71 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW50N65F5FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 305W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Manufacturer series: F5 Technology: TRENCHSTOP™ 5 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 71 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW50N65F5FKSA1 | Infineon Technologies |
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auf Bestellung 700 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYH50N65C3H1 Produktcode: 189326
zu Favoriten hinzufügen
Lieblingsprodukt
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Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247AD
Vces: 650 V
Vce: 2,1 V
Ic 25: 130 A
Ic 100: 50 A
td(on)/td(off) 100-150 Grad: 22/80
Gehäuse: TO-247AD
Vces: 650 V
Vce: 2,1 V
Ic 25: 130 A
Ic 100: 50 A
td(on)/td(off) 100-150 Grad: 22/80
auf Bestellung 22 Stück:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
AIGB50N65F5ATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 3.90 EUR |
AIGB50N65F5ATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 1090 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 10.05 EUR |
10+ | 6.72 EUR |
100+ | 4.84 EUR |
500+ | 4.04 EUR |
AIGB50N65H5ATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 3.90 EUR |
AIGB50N65H5ATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2535 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 10.05 EUR |
10+ | 6.72 EUR |
100+ | 4.84 EUR |
500+ | 4.04 EUR |
AIGW50N65F5XKSA1 |
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Hersteller: Infineon Technologies
IGBTs DISCRETES
IGBTs DISCRETES
auf Bestellung 176 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 11.09 EUR |
25+ | 6.85 EUR |
240+ | 5.28 EUR |
480+ | 4.65 EUR |
AIKB50N65DF5ATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 3.75 EUR |
AIKB50N65DF5ATMA1 |
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Hersteller: Infineon Technologies
IGBTs DISCRETE SWITCHES
IGBTs DISCRETE SWITCHES
auf Bestellung 785 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 9.68 EUR |
10+ | 6.48 EUR |
100+ | 5.21 EUR |
1000+ | 3.87 EUR |
AIKB50N65DF5ATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2200 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 9.75 EUR |
10+ | 6.52 EUR |
100+ | 4.69 EUR |
500+ | 3.90 EUR |
AIKB50N65DH5ATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 3980 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 9.75 EUR |
10+ | 6.52 EUR |
100+ | 4.69 EUR |
500+ | 3.90 EUR |
AIKB50N65DH5ATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 3.75 EUR |
AIKB50N65DH5ATMA1 |
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Hersteller: Infineon Technologies
IGBTs DISCRETE SWITCHES
IGBTs DISCRETE SWITCHES
auf Bestellung 382 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 9.68 EUR |
10+ | 6.48 EUR |
100+ | 4.66 EUR |
500+ | 3.87 EUR |
AIKBE50N65RF5ATMA1 |
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Hersteller: Infineon Technologies
IGBTs SIC_DISCRETE
IGBTs SIC_DISCRETE
auf Bestellung 57 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 15.59 EUR |
10+ | 10.70 EUR |
100+ | 7.92 EUR |
500+ | 7.30 EUR |
AIKBE50N65RF5ATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 96A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-7-U04
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16.8ns/136ns
Switching Energy: 120µJ (on), 90µJ (off)
Test Condition: 400V, 25A, 9Ohm, 15V
Gate Charge: 108 nC
Grade: Automotive
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
Qualification: AEC-Q101
Description: IGBT TRENCH FS 650V 96A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-7-U04
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16.8ns/136ns
Switching Energy: 120µJ (on), 90µJ (off)
Test Condition: 400V, 25A, 9Ohm, 15V
Gate Charge: 108 nC
Grade: Automotive
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
Qualification: AEC-Q101
auf Bestellung 519 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 15.72 EUR |
10+ | 10.78 EUR |
100+ | 7.98 EUR |
500+ | 7.08 EUR |
AIKW50N65DF5XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/156ns
Switching Energy: 490µJ (on), 140µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 1018 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT TRENCH 650V TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/156ns
Switching Energy: 490µJ (on), 140µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 1018 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 199 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 10.33 EUR |
10+ | 7.92 EUR |
30+ | 7.22 EUR |
120+ | 6.59 EUR |
AIKW50N65DH5XKSA1 |
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Hersteller: Infineon Technologies
IGBTs DISCRETES
IGBTs DISCRETES
auf Bestellung 427 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 15.33 EUR |
10+ | 12.55 EUR |
25+ | 11.33 EUR |
100+ | 9.45 EUR |
240+ | 7.08 EUR |
480+ | 6.30 EUR |
AIKW50N65RF5XKSA1 |
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Hersteller: Infineon Technologies
IGBTs SIC_DISCRETE
IGBTs SIC_DISCRETE
auf Bestellung 196 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 16.63 EUR |
10+ | 12.99 EUR |
25+ | 11.92 EUR |
100+ | 10.96 EUR |
240+ | 10.54 EUR |
480+ | 10.03 EUR |
AIKW50N65RF5XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/156ns
Switching Energy: 310µJ (on), 120µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 109 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
Qualification: AEC-Q101
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/156ns
Switching Energy: 310µJ (on), 120µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 109 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
Qualification: AEC-Q101
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 16.77 EUR |
10+ | 13.08 EUR |
30+ | 12.00 EUR |
120+ | 11.04 EUR |
BGH50N65HF1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 15.76 EUR |
7+ | 10.28 EUR |
BGH50N65HF1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 15.76 EUR |
7+ | 10.28 EUR |
600+ | 10.15 EUR |
BGH50N65HS1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 16.16 EUR |
6+ | 12.01 EUR |
7+ | 11.35 EUR |
BGH50N65HS1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 16.16 EUR |
6+ | 12.01 EUR |
7+ | 11.35 EUR |
150+ | 10.93 EUR |
BGH50N65ZF1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 476ns
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 476ns
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 14.26 EUR |
7+ | 10.75 EUR |
8+ | 10.17 EUR |
BGH50N65ZF1 |
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Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 476ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 476ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 14.26 EUR |
7+ | 10.75 EUR |
8+ | 10.17 EUR |
150+ | 9.78 EUR |
BIDW50N65T |
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Hersteller: Bourns
IGBTs IGBT Discrete 650V, 50A in TO-247
IGBTs IGBT Discrete 650V, 50A in TO-247
auf Bestellung 2391 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 6.93 EUR |
10+ | 5.95 EUR |
25+ | 4.35 EUR |
BIDW50N65T |
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Hersteller: Bourns Inc.
Description: IGBT TRENCH FS 650V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37.5 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/125ns
Switching Energy: 3mJ (on), 1.1mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 123 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 416 W
Description: IGBT TRENCH FS 650V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37.5 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/125ns
Switching Energy: 3mJ (on), 1.1mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 123 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 416 W
auf Bestellung 2853 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 7.23 EUR |
30+ | 4.37 EUR |
120+ | 4.21 EUR |
FCH150N65F-F155 |
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Hersteller: onsemi / Fairchild
MOSFETs N-Channel SuperFET II FRFET MOSFET
MOSFETs N-Channel SuperFET II FRFET MOSFET
auf Bestellung 397 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 10.61 EUR |
10+ | 8.89 EUR |
25+ | 6.88 EUR |
100+ | 5.90 EUR |
450+ | 5.88 EUR |
FCMT250N65S3 |
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Hersteller: onsemi
Description: MOSFET N-CH 650V 12A POWER88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
Description: MOSFET N-CH 650V 12A POWER88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
auf Bestellung 96000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 8.45 EUR |
10+ | 5.62 EUR |
100+ | 4.01 EUR |
500+ | 3.32 EUR |
1000+ | 3.22 EUR |
FCMT250N65S3 |
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Hersteller: onsemi
MOSFETs SUPERFET3 650V 12A 250 mOhm
MOSFETs SUPERFET3 650V 12A 250 mOhm
auf Bestellung 1681 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 6.16 EUR |
10+ | 4.52 EUR |
100+ | 3.56 EUR |
250+ | 3.54 EUR |
500+ | 3.33 EUR |
FCMT250N65S3 |
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Hersteller: onsemi
Description: MOSFET N-CH 650V 12A POWER88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
Description: MOSFET N-CH 650V 12A POWER88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
auf Bestellung 96000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 3.22 EUR |
FCP150N65F |
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Hersteller: onsemi / Fairchild
MOSFETs N-Channel SuperFET II FRFET MOSFET
MOSFETs N-Channel SuperFET II FRFET MOSFET
auf Bestellung 774 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 10.21 EUR |
25+ | 5.42 EUR |
100+ | 4.96 EUR |
500+ | 4.65 EUR |
1000+ | 4.24 EUR |
FCPF150N65F |
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Hersteller: onsemi / Fairchild
MOSFETs SuperFET2 150 mOhm 650V FRFET
MOSFETs SuperFET2 150 mOhm 650V FRFET
auf Bestellung 995 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 6.28 EUR |
10+ | 5.02 EUR |
50+ | 4.35 EUR |
FCPF150N65F |
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Hersteller: onsemi
Description: MOSFET N-CH 650V 14.9A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.4mA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3737 pF @ 100 V
Description: MOSFET N-CH 650V 14.9A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.4mA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3737 pF @ 100 V
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 7.44 EUR |
50+ | 4.21 EUR |
FCPF250N65S3R0L-F154 |
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Hersteller: onsemi
MOSFETs Power MOSFET, N-Channel, SUPERFET III, Easy Drive,650 V, 12 A, 250 mohm, TO-220F Ultra narrow lead
MOSFETs Power MOSFET, N-Channel, SUPERFET III, Easy Drive,650 V, 12 A, 250 mohm, TO-220F Ultra narrow lead
auf Bestellung 907 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 4.66 EUR |
10+ | 4.65 EUR |
25+ | 2.71 EUR |
100+ | 2.68 EUR |
FCPF250N65S3R0L-F154 |
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Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tj)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 290µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tj)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 290µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
auf Bestellung 1835 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 5.91 EUR |
50+ | 3.04 EUR |
100+ | 2.76 EUR |
500+ | 2.59 EUR |
IGB50N65H5ATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/173ns
Switching Energy: 1.59mJ (on), 750µJ (off)
Test Condition: 400V, 50A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/173ns
Switching Energy: 1.59mJ (on), 750µJ (off)
Test Condition: 400V, 50A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 2.59 EUR |
2000+ | 2.53 EUR |
IGB50N65H5ATMA1 |
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Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS
IGBTs IGBT PRODUCTS
auf Bestellung 1467 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 6.86 EUR |
10+ | 4.68 EUR |
25+ | 4.66 EUR |
100+ | 3.34 EUR |
500+ | 2.76 EUR |
1000+ | 2.60 EUR |
IGB50N65H5ATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/173ns
Switching Energy: 1.59mJ (on), 750µJ (off)
Test Condition: 400V, 50A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/173ns
Switching Energy: 1.59mJ (on), 750µJ (off)
Test Condition: 400V, 50A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 7.27 EUR |
10+ | 4.79 EUR |
100+ | 3.38 EUR |
500+ | 2.78 EUR |
IGB50N65S5ATMA1 |
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Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS
IGBTs IGBT PRODUCTS
auf Bestellung 893 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 5.35 EUR |
10+ | 4.19 EUR |
25+ | 4.17 EUR |
100+ | 3.06 EUR |
500+ | 2.66 EUR |
1000+ | 2.60 EUR |
IGB50N65S5ATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/139ns
Switching Energy: 1.23mJ (on), 740µJ (off)
Test Condition: 400V, 50A, 8.2Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 270 W
Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/139ns
Switching Energy: 1.23mJ (on), 740µJ (off)
Test Condition: 400V, 50A, 8.2Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 270 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 2.59 EUR |
IGB50N65S5ATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/139ns
Switching Energy: 1.23mJ (on), 740µJ (off)
Test Condition: 400V, 50A, 8.2Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 270 W
Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/139ns
Switching Energy: 1.23mJ (on), 740µJ (off)
Test Condition: 400V, 50A, 8.2Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 270 W
auf Bestellung 1219 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 7.27 EUR |
10+ | 4.79 EUR |
100+ | 3.38 EUR |
500+ | 2.78 EUR |
IGW50N65F5FKSA1 |
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auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 16.35 EUR |
IGW50N65F5FKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/175ns
Switching Energy: 490µJ (on), 160µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 305 W
Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/175ns
Switching Energy: 490µJ (on), 160µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 305 W
auf Bestellung 199 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 9.45 EUR |
30+ | 5.33 EUR |
120+ | 4.43 EUR |
IHW50N65R5 |
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Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS TrenchStop 5
IGBTs IGBT PRODUCTS TrenchStop 5
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 5.63 EUR |
10+ | 4.73 EUR |
25+ | 4.47 EUR |
100+ | 3.84 EUR |
240+ | 3.61 EUR |
480+ | 3.41 EUR |
1200+ | 3.03 EUR |
IHW50N65R5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
Turn-on time: 50ns
Turn-off time: 218ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
Turn-on time: 50ns
Turn-off time: 218ns
auf Bestellung 214 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.06 EUR |
14+ | 5.35 EUR |
16+ | 4.65 EUR |
17+ | 4.39 EUR |
IHW50N65R5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
Turn-on time: 50ns
Turn-off time: 218ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
Turn-on time: 50ns
Turn-off time: 218ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 214 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.06 EUR |
14+ | 5.35 EUR |
16+ | 4.65 EUR |
17+ | 4.39 EUR |
IHW50N65R6XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT 650V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 108 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/261ns
Switching Energy: 1.5mJ (on), 660µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 199 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 251 W
Description: IGBT 650V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 108 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/261ns
Switching Energy: 1.5mJ (on), 660µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 199 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 251 W
auf Bestellung 228 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 7.27 EUR |
30+ | 4.01 EUR |
120+ | 3.30 EUR |
IKFW50N65DH5XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 59A HSIP247-3-2
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 23ns/131ns
Switching Energy: 1.46mJ (on), 630µJ (off)
Test Condition: 400V, 50A, 12.2Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 59 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 124 W
Description: IGBT TRENCH 650V 59A HSIP247-3-2
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 23ns/131ns
Switching Energy: 1.46mJ (on), 630µJ (off)
Test Condition: 400V, 50A, 12.2Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 59 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 124 W
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 15.88 EUR |
30+ | 9.34 EUR |
120+ | 7.91 EUR |
IKFW50N65EH5XKSA1 |
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Hersteller: Infineon Technologies
IGBTs INDUSTRY 14
IGBTs INDUSTRY 14
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 12.72 EUR |
10+ | 12.34 EUR |
25+ | 8.69 EUR |
100+ | 7.32 EUR |
IKFW50N65EH5XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 59A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/138ns
Switching Energy: 1.2mJ (on), 400µJ (off)
Test Condition: 400V, 40A, 15.1Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 59 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 124 W
Description: IGBT TRENCH FS 650V 59A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/138ns
Switching Energy: 1.2mJ (on), 400µJ (off)
Test Condition: 400V, 40A, 15.1Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 59 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 124 W
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 15.75 EUR |
30+ | 9.27 EUR |
IKQ150N65EH7XKSA1 |
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Hersteller: Infineon Technologies
IGBTs 650 V, 150 A IGBT with anti-parallel diode in TO247PLUS-3 package
IGBTs 650 V, 150 A IGBT with anti-parallel diode in TO247PLUS-3 package
auf Bestellung 340 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 20.79 EUR |
10+ | 18.59 EUR |
25+ | 13.80 EUR |
100+ | 12.25 EUR |
IKQ150N65EH7XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 160A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-46
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 84 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 150A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/341ns
Switching Energy: 5.8mJ (on), 5.4mJ (off)
Test Condition: 400V, 150A, 10Ohm, 15V
Gate Charge: 301 nC
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 621 W
Description: IGBT TRENCH FS 650V 160A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-46
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 84 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 150A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/341ns
Switching Energy: 5.8mJ (on), 5.4mJ (off)
Test Condition: 400V, 150A, 10Ohm, 15V
Gate Charge: 301 nC
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 621 W
auf Bestellung 132 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 23.34 EUR |
30+ | 14.20 EUR |
120+ | 12.19 EUR |
IKW50N65EH5XKSA1 |
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Hersteller: Infineon Technologies
IGBTs INDUSTRY 14
IGBTs INDUSTRY 14
auf Bestellung 233 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 9.22 EUR |
10+ | 8.22 EUR |
25+ | 6.05 EUR |
100+ | 5.35 EUR |
240+ | 4.98 EUR |
480+ | 4.40 EUR |
1200+ | 4.31 EUR |
IKW50N65ES5 |
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Hersteller: Infineon Technologies
IGBTs Trenchstop 5 IGBT
IGBTs Trenchstop 5 IGBT
auf Bestellung 179 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 9.20 EUR |
10+ | 7.16 EUR |
25+ | 6.39 EUR |
100+ | 5.56 EUR |
240+ | 5.09 EUR |
480+ | 4.82 EUR |
1200+ | 4.51 EUR |
IKW50N65ES5XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/127ns
Switching Energy: 1.23mJ (on), 550µJ (off)
Test Condition: 400V, 50A, 8.2Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 274 W
Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/127ns
Switching Energy: 1.23mJ (on), 550µJ (off)
Test Condition: 400V, 50A, 8.2Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 274 W
auf Bestellung 189 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 10.07 EUR |
30+ | 5.72 EUR |
120+ | 4.76 EUR |
IKW50N65ET7XKSA1 |
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Hersteller: Infineon Technologies
IGBTs 650 V, 50 A IGBT with anti-parallel diode in TO-247 package
IGBTs 650 V, 50 A IGBT with anti-parallel diode in TO-247 package
auf Bestellung 256 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 10.12 EUR |
10+ | 10.10 EUR |
25+ | 5.76 EUR |
100+ | 4.80 EUR |
240+ | 4.79 EUR |
480+ | 4.14 EUR |
IKW50N65ET7XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/350ns
Switching Energy: 1.2mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 9Ohm, 15V
Gate Charge: 290 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 273 W
Qualification: AEC-Q101
Description: IGBT TRENCH FS 650V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/350ns
Switching Energy: 1.2mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 9Ohm, 15V
Gate Charge: 290 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 273 W
Qualification: AEC-Q101
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 10.23 EUR |
30+ | 5.81 EUR |
120+ | 4.84 EUR |
IKW50N65F5FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.71 EUR |
19+ | 3.78 EUR |
21+ | 3.56 EUR |
IKW50N65F5FKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 71 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.71 EUR |
19+ | 3.78 EUR |
21+ | 3.56 EUR |
120+ | 3.52 EUR |
240+ | 3.43 EUR |
IKW50N65F5FKSA1 |
![]() |
Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS
IGBTs IGBT PRODUCTS
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 9.93 EUR |
10+ | 9.80 EUR |
25+ | 3.92 EUR |
100+ | 3.84 EUR |
240+ | 3.78 EUR |
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