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IXYH50N65C3H1 IXYH50N65C3H1
Produktcode: 189326
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IXYH50N65C3H1.pdf Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247AD
Vces: 650 V
Vce: 2,1 V
Ic 25: 130 A
Ic 100: 50 A
td(on)/td(off) 100-150 Grad: 22/80
auf Bestellung 22 Stück:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AIGB50N65F5ATMA1 AIGB50N65F5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+3.90 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
AIGB50N65F5ATMA1 AIGB50N65F5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 1090 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.05 EUR
10+6.72 EUR
100+4.84 EUR
500+4.04 EUR
Mindestbestellmenge: 2
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AIGB50N65H5ATMA1 AIGB50N65H5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+3.90 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
AIGB50N65H5ATMA1 AIGB50N65H5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2535 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.05 EUR
10+6.72 EUR
100+4.84 EUR
500+4.04 EUR
Mindestbestellmenge: 2
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AIGW50N65F5XKSA1 AIGW50N65F5XKSA1 Infineon Technologies Infineon_AIGW50N65F5_DS_v02_01_EN-1129111.pdf IGBTs DISCRETES
auf Bestellung 176 Stücke:
Lieferzeit 10-14 Tag (e)
1+11.09 EUR
25+6.85 EUR
240+5.28 EUR
480+4.65 EUR
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AIKB50N65DF5ATMA1 AIKB50N65DF5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+3.75 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
AIKB50N65DF5ATMA1 AIKB50N65DF5ATMA1 Infineon Technologies Infineon_AIKB50N65DF5_DataSheet_v02_01_EN-3360644.pdf IGBTs DISCRETE SWITCHES
auf Bestellung 785 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.68 EUR
10+6.48 EUR
100+5.21 EUR
1000+3.87 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AIKB50N65DF5ATMA1 AIKB50N65DF5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2200 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.75 EUR
10+6.52 EUR
100+4.69 EUR
500+3.90 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
AIKB50N65DH5ATMA1 AIKB50N65DH5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 3980 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.75 EUR
10+6.52 EUR
100+4.69 EUR
500+3.90 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
AIKB50N65DH5ATMA1 AIKB50N65DH5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+3.75 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
AIKB50N65DH5ATMA1 AIKB50N65DH5ATMA1 Infineon Technologies Infineon_AIKB50N65DH5_DataSheet_v02_01_EN-3360584.pdf IGBTs DISCRETE SWITCHES
auf Bestellung 382 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.68 EUR
10+6.48 EUR
100+4.66 EUR
500+3.87 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AIKBE50N65RF5ATMA1 AIKBE50N65RF5ATMA1 Infineon Technologies Infineon_AIKBE50N65RF5_DataSheet_v01_00_EN-3369286.pdf IGBTs SIC_DISCRETE
auf Bestellung 57 Stücke:
Lieferzeit 10-14 Tag (e)
1+15.59 EUR
10+10.70 EUR
100+7.92 EUR
500+7.30 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AIKBE50N65RF5ATMA1 AIKBE50N65RF5ATMA1 Infineon Technologies Infineon-AIKBE50N65RF5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018be5aabe714146 Description: IGBT TRENCH FS 650V 96A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-7-U04
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16.8ns/136ns
Switching Energy: 120µJ (on), 90µJ (off)
Test Condition: 400V, 25A, 9Ohm, 15V
Gate Charge: 108 nC
Grade: Automotive
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
Qualification: AEC-Q101
auf Bestellung 519 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.72 EUR
10+10.78 EUR
100+7.98 EUR
500+7.08 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
AIKW50N65DF5XKSA1 AIKW50N65DF5XKSA1 Infineon Technologies Infineon-AIKW50N65DF5-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015d081326247f3a Description: IGBT TRENCH 650V TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/156ns
Switching Energy: 490µJ (on), 140µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 1018 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 199 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.33 EUR
10+7.92 EUR
30+7.22 EUR
120+6.59 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
AIKW50N65DH5XKSA1 AIKW50N65DH5XKSA1 Infineon Technologies Infineon_AIKW50N65DH5_DS_v02_01_EN-1730854.pdf IGBTs DISCRETES
auf Bestellung 427 Stücke:
Lieferzeit 10-14 Tag (e)
1+15.33 EUR
10+12.55 EUR
25+11.33 EUR
100+9.45 EUR
240+7.08 EUR
480+6.30 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AIKW50N65RF5XKSA1 AIKW50N65RF5XKSA1 Infineon Technologies Infineon_AIKW50N65RF5_DataSheet_v02_04_EN-1957308.pdf IGBTs SIC_DISCRETE
auf Bestellung 196 Stücke:
Lieferzeit 10-14 Tag (e)
1+16.63 EUR
10+12.99 EUR
25+11.92 EUR
100+10.96 EUR
240+10.54 EUR
480+10.03 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AIKW50N65RF5XKSA1 AIKW50N65RF5XKSA1 Infineon Technologies Infineon-AIKW50N65RF5-DataSheet-v02_04-EN.pdf?fileId=5546d462766cbe8601766cc8105e0014 Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/156ns
Switching Energy: 310µJ (on), 120µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 109 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
Qualification: AEC-Q101
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.77 EUR
10+13.08 EUR
30+12.00 EUR
120+11.04 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65HF1 BGH50N65HF1 BASiC SEMICONDUCTOR BGH50N65HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.76 EUR
7+10.28 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65HF1 BGH50N65HF1 BASiC SEMICONDUCTOR BGH50N65HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)
5+15.76 EUR
7+10.28 EUR
600+10.15 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65HS1 BGH50N65HS1 BASiC SEMICONDUCTOR BGH50N65HS1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
5+16.16 EUR
6+12.01 EUR
7+11.35 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65HS1 BGH50N65HS1 BASiC SEMICONDUCTOR BGH50N65HS1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)
5+16.16 EUR
6+12.01 EUR
7+11.35 EUR
150+10.93 EUR
Mindestbestellmenge: 5
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BGH50N65ZF1 BGH50N65ZF1 BASiC SEMICONDUCTOR BGH50N65ZF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 476ns
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
6+14.26 EUR
7+10.75 EUR
8+10.17 EUR
Mindestbestellmenge: 6
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BGH50N65ZF1 BGH50N65ZF1 BASiC SEMICONDUCTOR BGH50N65ZF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 476ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
6+14.26 EUR
7+10.75 EUR
8+10.17 EUR
150+9.78 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BIDW50N65T BIDW50N65T Bourns Bourns_7_25_2022_BIDW50N65T_datasheet-3005216.pdf IGBTs IGBT Discrete 650V, 50A in TO-247
auf Bestellung 2391 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.93 EUR
10+5.95 EUR
25+4.35 EUR
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BIDW50N65T BIDW50N65T Bourns Inc. BIDW50N65T.pdf Description: IGBT TRENCH FS 650V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37.5 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/125ns
Switching Energy: 3mJ (on), 1.1mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 123 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 416 W
auf Bestellung 2853 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.23 EUR
30+4.37 EUR
120+4.21 EUR
Mindestbestellmenge: 3
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FCH150N65F-F155 FCH150N65F-F155 onsemi / Fairchild FCH150N65F_D-2037211.pdf MOSFETs N-Channel SuperFET II FRFET MOSFET
auf Bestellung 397 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.61 EUR
10+8.89 EUR
25+6.88 EUR
100+5.90 EUR
450+5.88 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCMT250N65S3 FCMT250N65S3 onsemi fcmt250n65s3-d.pdf Description: MOSFET N-CH 650V 12A POWER88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
auf Bestellung 96000 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.45 EUR
10+5.62 EUR
100+4.01 EUR
500+3.32 EUR
1000+3.22 EUR
Mindestbestellmenge: 3
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FCMT250N65S3 FCMT250N65S3 onsemi fcmt250n65s3-d.pdf MOSFETs SUPERFET3 650V 12A 250 mOhm
auf Bestellung 1681 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.16 EUR
10+4.52 EUR
100+3.56 EUR
250+3.54 EUR
500+3.33 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCMT250N65S3 FCMT250N65S3 onsemi fcmt250n65s3-d.pdf Description: MOSFET N-CH 650V 12A POWER88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
auf Bestellung 96000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+3.22 EUR
Mindestbestellmenge: 3000
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FCP150N65F FCP150N65F onsemi / Fairchild fcp150n65f-d.pdf MOSFETs N-Channel SuperFET II FRFET MOSFET
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FCPF150N65F FCPF150N65F onsemi / Fairchild fcpf150n65f-d.pdf MOSFETs SuperFET2 150 mOhm 650V FRFET
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FCPF150N65F FCPF150N65F onsemi fcpf150n65f-d.pdf Description: MOSFET N-CH 650V 14.9A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.4mA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3737 pF @ 100 V
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FCPF250N65S3R0L-F154 FCPF250N65S3R0L-F154 onsemi fcpf250n65s3r0l-f154-d.pdf MOSFETs Power MOSFET, N-Channel, SUPERFET III, Easy Drive,650 V, 12 A, 250 mohm, TO-220F Ultra narrow lead
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FCPF250N65S3R0L-F154 FCPF250N65S3R0L-F154 onsemi fcpf250n65s3r0l-f154-d.pdf Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tj)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 290µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
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IGB50N65H5ATMA1 IGB50N65H5ATMA1 Infineon Technologies Infineon-IGB50N65H5-DS-v02_02-EN.pdf?fileId=5546d4625e763904015ec81bd7432ff0 Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/173ns
Switching Energy: 1.59mJ (on), 750µJ (off)
Test Condition: 400V, 50A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
auf Bestellung 4000 Stücke:
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1000+2.59 EUR
2000+2.53 EUR
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IGB50N65H5ATMA1 IGB50N65H5ATMA1 Infineon Technologies Infineon_IGB50N65H5_DataSheet_v02_02_EN-3361683.pdf IGBTs IGBT PRODUCTS
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IGB50N65H5ATMA1 IGB50N65H5ATMA1 Infineon Technologies Infineon-IGB50N65H5-DS-v02_02-EN.pdf?fileId=5546d4625e763904015ec81bd7432ff0 Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/173ns
Switching Energy: 1.59mJ (on), 750µJ (off)
Test Condition: 400V, 50A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
auf Bestellung 4990 Stücke:
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IGB50N65S5ATMA1 IGB50N65S5ATMA1 Infineon Technologies Infineon_IGB50N65S5_DataSheet_v02_02_EN-3361666.pdf IGBTs IGBT PRODUCTS
auf Bestellung 893 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.35 EUR
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100+3.06 EUR
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IGB50N65S5ATMA1 IGB50N65S5ATMA1 Infineon Technologies Infineon-IGB50N65S5-DS-v02_02-EN.pdf?fileId=5546d4625e763904015ec81bbc6f2fec Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/139ns
Switching Energy: 1.23mJ (on), 740µJ (off)
Test Condition: 400V, 50A, 8.2Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 270 W
auf Bestellung 1000 Stücke:
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IGB50N65S5ATMA1 IGB50N65S5ATMA1 Infineon Technologies Infineon-IGB50N65S5-DS-v02_02-EN.pdf?fileId=5546d4625e763904015ec81bbc6f2fec Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/139ns
Switching Energy: 1.23mJ (on), 740µJ (off)
Test Condition: 400V, 50A, 8.2Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 270 W
auf Bestellung 1219 Stücke:
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IGW50N65F5FKSA1 Infineon DS_IGW50N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af8ed558f5bc5 IGBT 650V 80A 305W   IGW50N65F5FKSA1 TIGW50n65f5
Anzahl je Verpackung: 5 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
5+16.35 EUR
Mindestbestellmenge: 5
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IGW50N65F5FKSA1 IGW50N65F5FKSA1 Infineon Technologies DS_IGW50N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af8ed558f5bc5 Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/175ns
Switching Energy: 490µJ (on), 160µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 305 W
auf Bestellung 199 Stücke:
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IHW50N65R5 IHW50N65R5 Infineon Technologies Infineon_IHW50N65R5_DS_v02_04_EN-1731583.pdf IGBTs IGBT PRODUCTS TrenchStop 5
auf Bestellung 56 Stücke:
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IHW50N65R5XKSA1 IHW50N65R5XKSA1 INFINEON TECHNOLOGIES IHW50N65R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
Turn-on time: 50ns
Turn-off time: 218ns
auf Bestellung 214 Stücke:
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IHW50N65R5XKSA1 IHW50N65R5XKSA1 INFINEON TECHNOLOGIES IHW50N65R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
Turn-on time: 50ns
Turn-off time: 218ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 214 Stücke:
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IHW50N65R6XKSA1 IHW50N65R6XKSA1 Infineon Technologies Infineon-IHW50N65R6-DataSheet-v01_20-EN.pdf?fileId=5546d46277fc7439017826e1c8ed727b Description: IGBT 650V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 108 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/261ns
Switching Energy: 1.5mJ (on), 660µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 199 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 251 W
auf Bestellung 228 Stücke:
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3+7.27 EUR
30+4.01 EUR
120+3.30 EUR
Mindestbestellmenge: 3
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IKFW50N65DH5XKSA1 IKFW50N65DH5XKSA1 Infineon Technologies Infineon-IKFW50N65DH5-DataSheet-v02_01-EN.pdf?fileId=5546d4626c1f3dc3016c23ecaa840da9 Description: IGBT TRENCH 650V 59A HSIP247-3-2
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 23ns/131ns
Switching Energy: 1.46mJ (on), 630µJ (off)
Test Condition: 400V, 50A, 12.2Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 59 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 124 W
auf Bestellung 230 Stücke:
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2+15.88 EUR
30+9.34 EUR
120+7.91 EUR
Mindestbestellmenge: 2
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IKFW50N65EH5XKSA1 IKFW50N65EH5XKSA1 Infineon Technologies Infineon_IKFW50N65EH5_DataSheet_v02_01_EN-3361941.pdf IGBTs INDUSTRY 14
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
1+12.72 EUR
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IKFW50N65EH5XKSA1 IKFW50N65EH5XKSA1 Infineon Technologies Infineon-IKFW50N65EH5-DataSheet-v02_01-EN.pdf?fileId=5546d4627506bb3201754b1a2aa576ae Description: IGBT TRENCH FS 650V 59A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/138ns
Switching Energy: 1.2mJ (on), 400µJ (off)
Test Condition: 400V, 40A, 15.1Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 59 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 124 W
auf Bestellung 105 Stücke:
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2+15.75 EUR
30+9.27 EUR
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IKQ150N65EH7XKSA1 IKQ150N65EH7XKSA1 Infineon Technologies Infineon_IKQ150N65EH7_DataSheet_v01_20_EN-3421508.pdf IGBTs 650 V, 150 A IGBT with anti-parallel diode in TO247PLUS-3 package
auf Bestellung 340 Stücke:
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IKQ150N65EH7XKSA1 IKQ150N65EH7XKSA1 Infineon Technologies Infineon-IKQ150N65EH7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8900bb5701892507e0bc2038 Description: IGBT TRENCH FS 650V 160A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-46
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 84 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 150A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/341ns
Switching Energy: 5.8mJ (on), 5.4mJ (off)
Test Condition: 400V, 150A, 10Ohm, 15V
Gate Charge: 301 nC
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 621 W
auf Bestellung 132 Stücke:
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30+14.20 EUR
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IKW50N65EH5XKSA1 IKW50N65EH5XKSA1 Infineon Technologies Infineon_IKW50N65EH5_DataSheet_v01_10_EN-3361847.pdf IGBTs INDUSTRY 14
auf Bestellung 233 Stücke:
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IKW50N65ES5 IKW50N65ES5 Infineon Technologies Infineon_IKW50N65ES5_DS_v02_03_EN-1226692.pdf IGBTs Trenchstop 5 IGBT
auf Bestellung 179 Stücke:
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1+9.20 EUR
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IKW50N65ES5XKSA1 IKW50N65ES5XKSA1 Infineon Technologies Infineon-IKW50N65ES5-DS-v02_03-EN.pdf?fileId=5546d4624fb7fef20150147874f758c0 Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/127ns
Switching Energy: 1.23mJ (on), 550µJ (off)
Test Condition: 400V, 50A, 8.2Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 274 W
auf Bestellung 189 Stücke:
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2+10.07 EUR
30+5.72 EUR
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IKW50N65ET7XKSA1 IKW50N65ET7XKSA1 Infineon Technologies Infineon_IKW50N65ET7_DataSheet_v01_10_EN-3362248.pdf IGBTs 650 V, 50 A IGBT with anti-parallel diode in TO-247 package
auf Bestellung 256 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.12 EUR
10+10.10 EUR
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100+4.80 EUR
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IKW50N65ET7XKSA1 IKW50N65ET7XKSA1 Infineon Technologies Infineon-IKW50N65ET7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a017351bed62757f8 Description: IGBT TRENCH FS 650V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/350ns
Switching Energy: 1.2mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 9Ohm, 15V
Gate Charge: 290 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 273 W
Qualification: AEC-Q101
auf Bestellung 200 Stücke:
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2+10.23 EUR
30+5.81 EUR
120+4.84 EUR
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IKW50N65F5FKSA1 IKW50N65F5FKSA1 INFINEON TECHNOLOGIES IKW50N65F5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.71 EUR
19+3.78 EUR
21+3.56 EUR
Mindestbestellmenge: 10
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IKW50N65F5FKSA1 IKW50N65F5FKSA1 INFINEON TECHNOLOGIES IKW50N65F5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 71 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.71 EUR
19+3.78 EUR
21+3.56 EUR
120+3.52 EUR
240+3.43 EUR
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IKW50N65F5FKSA1 IKW50N65F5FKSA1 Infineon Technologies Infineon_IKW50N65F5_DS_v02_01_EN-1226899.pdf IGBTs IGBT PRODUCTS
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.93 EUR
10+9.80 EUR
25+3.92 EUR
100+3.84 EUR
240+3.78 EUR
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IXYH50N65C3H1
Produktcode: 189326
zu Favoriten hinzufügen Lieblingsprodukt

IXYH50N65C3H1.pdf
IXYH50N65C3H1
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247AD
Vces: 650 V
Vce: 2,1 V
Ic 25: 130 A
Ic 100: 50 A
td(on)/td(off) 100-150 Grad: 22/80
auf Bestellung 22 Stück:
Lieferzeit 21-28 Tag (e)
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AIGB50N65F5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIGB50N65F5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+3.90 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
AIGB50N65F5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIGB50N65F5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 1090 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.05 EUR
10+6.72 EUR
100+4.84 EUR
500+4.04 EUR
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AIGB50N65H5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIGB50N65H5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+3.90 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
AIGB50N65H5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIGB50N65H5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2535 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.05 EUR
10+6.72 EUR
100+4.84 EUR
500+4.04 EUR
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AIGW50N65F5XKSA1 Infineon_AIGW50N65F5_DS_v02_01_EN-1129111.pdf
AIGW50N65F5XKSA1
Hersteller: Infineon Technologies
IGBTs DISCRETES
auf Bestellung 176 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+11.09 EUR
25+6.85 EUR
240+5.28 EUR
480+4.65 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AIKB50N65DF5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIKB50N65DF5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+3.75 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
AIKB50N65DF5ATMA1 Infineon_AIKB50N65DF5_DataSheet_v02_01_EN-3360644.pdf
AIKB50N65DF5ATMA1
Hersteller: Infineon Technologies
IGBTs DISCRETE SWITCHES
auf Bestellung 785 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.68 EUR
10+6.48 EUR
100+5.21 EUR
1000+3.87 EUR
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AIKB50N65DF5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIKB50N65DF5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.75 EUR
10+6.52 EUR
100+4.69 EUR
500+3.90 EUR
Mindestbestellmenge: 2
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AIKB50N65DH5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIKB50N65DH5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 3980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.75 EUR
10+6.52 EUR
100+4.69 EUR
500+3.90 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
AIKB50N65DH5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIKB50N65DH5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+3.75 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
AIKB50N65DH5ATMA1 Infineon_AIKB50N65DH5_DataSheet_v02_01_EN-3360584.pdf
AIKB50N65DH5ATMA1
Hersteller: Infineon Technologies
IGBTs DISCRETE SWITCHES
auf Bestellung 382 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.68 EUR
10+6.48 EUR
100+4.66 EUR
500+3.87 EUR
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AIKBE50N65RF5ATMA1 Infineon_AIKBE50N65RF5_DataSheet_v01_00_EN-3369286.pdf
AIKBE50N65RF5ATMA1
Hersteller: Infineon Technologies
IGBTs SIC_DISCRETE
auf Bestellung 57 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+15.59 EUR
10+10.70 EUR
100+7.92 EUR
500+7.30 EUR
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AIKBE50N65RF5ATMA1 Infineon-AIKBE50N65RF5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018be5aabe714146
AIKBE50N65RF5ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 96A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-7-U04
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16.8ns/136ns
Switching Energy: 120µJ (on), 90µJ (off)
Test Condition: 400V, 25A, 9Ohm, 15V
Gate Charge: 108 nC
Grade: Automotive
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
Qualification: AEC-Q101
auf Bestellung 519 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.72 EUR
10+10.78 EUR
100+7.98 EUR
500+7.08 EUR
Mindestbestellmenge: 2
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AIKW50N65DF5XKSA1 Infineon-AIKW50N65DF5-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015d081326247f3a
AIKW50N65DF5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/156ns
Switching Energy: 490µJ (on), 140µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 1018 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 199 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.33 EUR
10+7.92 EUR
30+7.22 EUR
120+6.59 EUR
Mindestbestellmenge: 2
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AIKW50N65DH5XKSA1 Infineon_AIKW50N65DH5_DS_v02_01_EN-1730854.pdf
AIKW50N65DH5XKSA1
Hersteller: Infineon Technologies
IGBTs DISCRETES
auf Bestellung 427 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+15.33 EUR
10+12.55 EUR
25+11.33 EUR
100+9.45 EUR
240+7.08 EUR
480+6.30 EUR
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AIKW50N65RF5XKSA1 Infineon_AIKW50N65RF5_DataSheet_v02_04_EN-1957308.pdf
AIKW50N65RF5XKSA1
Hersteller: Infineon Technologies
IGBTs SIC_DISCRETE
auf Bestellung 196 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+16.63 EUR
10+12.99 EUR
25+11.92 EUR
100+10.96 EUR
240+10.54 EUR
480+10.03 EUR
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AIKW50N65RF5XKSA1 Infineon-AIKW50N65RF5-DataSheet-v02_04-EN.pdf?fileId=5546d462766cbe8601766cc8105e0014
AIKW50N65RF5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/156ns
Switching Energy: 310µJ (on), 120µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 109 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
Qualification: AEC-Q101
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.77 EUR
10+13.08 EUR
30+12.00 EUR
120+11.04 EUR
Mindestbestellmenge: 2
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BGH50N65HF1 BGH50N65HF1.pdf
BGH50N65HF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.76 EUR
7+10.28 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65HF1 BGH50N65HF1.pdf
BGH50N65HF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+15.76 EUR
7+10.28 EUR
600+10.15 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65HS1 BGH50N65HS1.pdf
BGH50N65HS1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.16 EUR
6+12.01 EUR
7+11.35 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65HS1 BGH50N65HS1.pdf
BGH50N65HS1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+16.16 EUR
6+12.01 EUR
7+11.35 EUR
150+10.93 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65ZF1 BGH50N65ZF1.pdf
BGH50N65ZF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 476ns
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+14.26 EUR
7+10.75 EUR
8+10.17 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BGH50N65ZF1 BGH50N65ZF1.pdf
BGH50N65ZF1
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 476ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+14.26 EUR
7+10.75 EUR
8+10.17 EUR
150+9.78 EUR
Mindestbestellmenge: 6
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BIDW50N65T Bourns_7_25_2022_BIDW50N65T_datasheet-3005216.pdf
BIDW50N65T
Hersteller: Bourns
IGBTs IGBT Discrete 650V, 50A in TO-247
auf Bestellung 2391 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.93 EUR
10+5.95 EUR
25+4.35 EUR
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BIDW50N65T BIDW50N65T.pdf
BIDW50N65T
Hersteller: Bourns Inc.
Description: IGBT TRENCH FS 650V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37.5 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/125ns
Switching Energy: 3mJ (on), 1.1mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 123 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 416 W
auf Bestellung 2853 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.23 EUR
30+4.37 EUR
120+4.21 EUR
Mindestbestellmenge: 3
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FCH150N65F-F155 FCH150N65F_D-2037211.pdf
FCH150N65F-F155
Hersteller: onsemi / Fairchild
MOSFETs N-Channel SuperFET II FRFET MOSFET
auf Bestellung 397 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.61 EUR
10+8.89 EUR
25+6.88 EUR
100+5.90 EUR
450+5.88 EUR
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FCMT250N65S3 fcmt250n65s3-d.pdf
FCMT250N65S3
Hersteller: onsemi
Description: MOSFET N-CH 650V 12A POWER88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
auf Bestellung 96000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.45 EUR
10+5.62 EUR
100+4.01 EUR
500+3.32 EUR
1000+3.22 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FCMT250N65S3 fcmt250n65s3-d.pdf
FCMT250N65S3
Hersteller: onsemi
MOSFETs SUPERFET3 650V 12A 250 mOhm
auf Bestellung 1681 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.16 EUR
10+4.52 EUR
100+3.56 EUR
250+3.54 EUR
500+3.33 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCMT250N65S3 fcmt250n65s3-d.pdf
FCMT250N65S3
Hersteller: onsemi
Description: MOSFET N-CH 650V 12A POWER88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
auf Bestellung 96000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+3.22 EUR
Mindestbestellmenge: 3000
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FCP150N65F fcp150n65f-d.pdf
FCP150N65F
Hersteller: onsemi / Fairchild
MOSFETs N-Channel SuperFET II FRFET MOSFET
auf Bestellung 774 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.21 EUR
25+5.42 EUR
100+4.96 EUR
500+4.65 EUR
1000+4.24 EUR
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FCPF150N65F fcpf150n65f-d.pdf
FCPF150N65F
Hersteller: onsemi / Fairchild
MOSFETs SuperFET2 150 mOhm 650V FRFET
auf Bestellung 995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.28 EUR
10+5.02 EUR
50+4.35 EUR
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FCPF150N65F fcpf150n65f-d.pdf
FCPF150N65F
Hersteller: onsemi
Description: MOSFET N-CH 650V 14.9A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.4mA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3737 pF @ 100 V
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.44 EUR
50+4.21 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FCPF250N65S3R0L-F154 fcpf250n65s3r0l-f154-d.pdf
FCPF250N65S3R0L-F154
Hersteller: onsemi
MOSFETs Power MOSFET, N-Channel, SUPERFET III, Easy Drive,650 V, 12 A, 250 mohm, TO-220F Ultra narrow lead
auf Bestellung 907 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.66 EUR
10+4.65 EUR
25+2.71 EUR
100+2.68 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCPF250N65S3R0L-F154 fcpf250n65s3r0l-f154-d.pdf
FCPF250N65S3R0L-F154
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tj)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 290µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
auf Bestellung 1835 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.91 EUR
50+3.04 EUR
100+2.76 EUR
500+2.59 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IGB50N65H5ATMA1 Infineon-IGB50N65H5-DS-v02_02-EN.pdf?fileId=5546d4625e763904015ec81bd7432ff0
IGB50N65H5ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/173ns
Switching Energy: 1.59mJ (on), 750µJ (off)
Test Condition: 400V, 50A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.59 EUR
2000+2.53 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IGB50N65H5ATMA1 Infineon_IGB50N65H5_DataSheet_v02_02_EN-3361683.pdf
IGB50N65H5ATMA1
Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS
auf Bestellung 1467 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.86 EUR
10+4.68 EUR
25+4.66 EUR
100+3.34 EUR
500+2.76 EUR
1000+2.60 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGB50N65H5ATMA1 Infineon-IGB50N65H5-DS-v02_02-EN.pdf?fileId=5546d4625e763904015ec81bd7432ff0
IGB50N65H5ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/173ns
Switching Energy: 1.59mJ (on), 750µJ (off)
Test Condition: 400V, 50A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.27 EUR
10+4.79 EUR
100+3.38 EUR
500+2.78 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IGB50N65S5ATMA1 Infineon_IGB50N65S5_DataSheet_v02_02_EN-3361666.pdf
IGB50N65S5ATMA1
Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS
auf Bestellung 893 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.35 EUR
10+4.19 EUR
25+4.17 EUR
100+3.06 EUR
500+2.66 EUR
1000+2.60 EUR
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IGB50N65S5ATMA1 Infineon-IGB50N65S5-DS-v02_02-EN.pdf?fileId=5546d4625e763904015ec81bbc6f2fec
IGB50N65S5ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/139ns
Switching Energy: 1.23mJ (on), 740µJ (off)
Test Condition: 400V, 50A, 8.2Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 270 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.59 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IGB50N65S5ATMA1 Infineon-IGB50N65S5-DS-v02_02-EN.pdf?fileId=5546d4625e763904015ec81bbc6f2fec
IGB50N65S5ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/139ns
Switching Energy: 1.23mJ (on), 740µJ (off)
Test Condition: 400V, 50A, 8.2Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 270 W
auf Bestellung 1219 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.27 EUR
10+4.79 EUR
100+3.38 EUR
500+2.78 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N65F5FKSA1 DS_IGW50N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af8ed558f5bc5
Hersteller: Infineon
IGBT 650V 80A 305W   IGW50N65F5FKSA1 TIGW50n65f5
Anzahl je Verpackung: 5 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+16.35 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N65F5FKSA1 DS_IGW50N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af8ed558f5bc5
IGW50N65F5FKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/175ns
Switching Energy: 490µJ (on), 160µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 305 W
auf Bestellung 199 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.45 EUR
30+5.33 EUR
120+4.43 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IHW50N65R5 Infineon_IHW50N65R5_DS_v02_04_EN-1731583.pdf
IHW50N65R5
Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS TrenchStop 5
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.63 EUR
10+4.73 EUR
25+4.47 EUR
100+3.84 EUR
240+3.61 EUR
480+3.41 EUR
1200+3.03 EUR
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IHW50N65R5XKSA1 IHW50N65R5.pdf
IHW50N65R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
Turn-on time: 50ns
Turn-off time: 218ns
auf Bestellung 214 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.06 EUR
14+5.35 EUR
16+4.65 EUR
17+4.39 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IHW50N65R5XKSA1 IHW50N65R5.pdf
IHW50N65R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
Turn-on time: 50ns
Turn-off time: 218ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 214 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
12+6.06 EUR
14+5.35 EUR
16+4.65 EUR
17+4.39 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IHW50N65R6XKSA1 Infineon-IHW50N65R6-DataSheet-v01_20-EN.pdf?fileId=5546d46277fc7439017826e1c8ed727b
IHW50N65R6XKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 108 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/261ns
Switching Energy: 1.5mJ (on), 660µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 199 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 251 W
auf Bestellung 228 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.27 EUR
30+4.01 EUR
120+3.30 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N65DH5XKSA1 Infineon-IKFW50N65DH5-DataSheet-v02_01-EN.pdf?fileId=5546d4626c1f3dc3016c23ecaa840da9
IKFW50N65DH5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 59A HSIP247-3-2
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 23ns/131ns
Switching Energy: 1.46mJ (on), 630µJ (off)
Test Condition: 400V, 50A, 12.2Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 59 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 124 W
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.88 EUR
30+9.34 EUR
120+7.91 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N65EH5XKSA1 Infineon_IKFW50N65EH5_DataSheet_v02_01_EN-3361941.pdf
IKFW50N65EH5XKSA1
Hersteller: Infineon Technologies
IGBTs INDUSTRY 14
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+12.72 EUR
10+12.34 EUR
25+8.69 EUR
100+7.32 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N65EH5XKSA1 Infineon-IKFW50N65EH5-DataSheet-v02_01-EN.pdf?fileId=5546d4627506bb3201754b1a2aa576ae
IKFW50N65EH5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 59A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/138ns
Switching Energy: 1.2mJ (on), 400µJ (off)
Test Condition: 400V, 40A, 15.1Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 59 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 124 W
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.75 EUR
30+9.27 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IKQ150N65EH7XKSA1 Infineon_IKQ150N65EH7_DataSheet_v01_20_EN-3421508.pdf
IKQ150N65EH7XKSA1
Hersteller: Infineon Technologies
IGBTs 650 V, 150 A IGBT with anti-parallel diode in TO247PLUS-3 package
auf Bestellung 340 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.79 EUR
10+18.59 EUR
25+13.80 EUR
100+12.25 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKQ150N65EH7XKSA1 Infineon-IKQ150N65EH7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8900bb5701892507e0bc2038
IKQ150N65EH7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 160A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-46
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 84 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 150A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/341ns
Switching Energy: 5.8mJ (on), 5.4mJ (off)
Test Condition: 400V, 150A, 10Ohm, 15V
Gate Charge: 301 nC
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 621 W
auf Bestellung 132 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+23.34 EUR
30+14.20 EUR
120+12.19 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N65EH5XKSA1 Infineon_IKW50N65EH5_DataSheet_v01_10_EN-3361847.pdf
IKW50N65EH5XKSA1
Hersteller: Infineon Technologies
IGBTs INDUSTRY 14
auf Bestellung 233 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.22 EUR
10+8.22 EUR
25+6.05 EUR
100+5.35 EUR
240+4.98 EUR
480+4.40 EUR
1200+4.31 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N65ES5 Infineon_IKW50N65ES5_DS_v02_03_EN-1226692.pdf
IKW50N65ES5
Hersteller: Infineon Technologies
IGBTs Trenchstop 5 IGBT
auf Bestellung 179 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.20 EUR
10+7.16 EUR
25+6.39 EUR
100+5.56 EUR
240+5.09 EUR
480+4.82 EUR
1200+4.51 EUR
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IKW50N65ES5XKSA1 Infineon-IKW50N65ES5-DS-v02_03-EN.pdf?fileId=5546d4624fb7fef20150147874f758c0
IKW50N65ES5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/127ns
Switching Energy: 1.23mJ (on), 550µJ (off)
Test Condition: 400V, 50A, 8.2Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 274 W
auf Bestellung 189 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.07 EUR
30+5.72 EUR
120+4.76 EUR
Mindestbestellmenge: 2
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IKW50N65ET7XKSA1 Infineon_IKW50N65ET7_DataSheet_v01_10_EN-3362248.pdf
IKW50N65ET7XKSA1
Hersteller: Infineon Technologies
IGBTs 650 V, 50 A IGBT with anti-parallel diode in TO-247 package
auf Bestellung 256 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.12 EUR
10+10.10 EUR
25+5.76 EUR
100+4.80 EUR
240+4.79 EUR
480+4.14 EUR
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IKW50N65ET7XKSA1 Infineon-IKW50N65ET7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a017351bed62757f8
IKW50N65ET7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/350ns
Switching Energy: 1.2mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 9Ohm, 15V
Gate Charge: 290 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 273 W
Qualification: AEC-Q101
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.23 EUR
30+5.81 EUR
120+4.84 EUR
Mindestbestellmenge: 2
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IKW50N65F5FKSA1 IKW50N65F5-DTE.pdf
IKW50N65F5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.71 EUR
19+3.78 EUR
21+3.56 EUR
Mindestbestellmenge: 10
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IKW50N65F5FKSA1 IKW50N65F5-DTE.pdf
IKW50N65F5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 71 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.71 EUR
19+3.78 EUR
21+3.56 EUR
120+3.52 EUR
240+3.43 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N65F5FKSA1 Infineon_IKW50N65F5_DS_v02_01_EN-1226899.pdf
IKW50N65F5FKSA1
Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.93 EUR
10+9.80 EUR
25+3.92 EUR
100+3.84 EUR
240+3.78 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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