Suchergebnisse für "GBT" : > 120

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SKM200GB125D 22890620 SKM200GB125D 22890620 SEMIKRON DANFOSS SKM200GB125D.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 160A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 160A
Case: SEMITRANS3
Version: D56
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SKM200GB12T4 22892060 SKM200GB12T4 22892060 SEMIKRON DANFOSS SKM200GB12T4.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 241A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 241A
Case: SEMITRANS3
Version: D56
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
1+165.28 EUR
5+ 163.02 EUR
SKM200GB176D 22890700 SKM200GB176D 22890700 SEMIKRON DANFOSS SKM200GB176D.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 180A
Application: for UPS; frequency changer; Inverter; photovoltaics
Type of module: IGBT
Topology: IGBT half-bridge
Case: SEMITRANS3
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 180A
Pulsed collector current: 300A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+242.56 EUR
SKM300GA12T4 22892120 SKM300GA12T4 22892120 SEMIKRON DANFOSS SKM300GA12T4.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 300A; SEMITRANS4
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SEMITRANS4
Version: D59
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
1+127.5 EUR
SKM300GA12V 22892123 SKM300GA12V 22892123 SEMIKRON DANFOSS SKM300GA12V.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 300A; SEMITRANS4
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: screw
Mechanical mounting: screw
Version: D59
Type of module: IGBT
Case: SEMITRANS4
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 300A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
1+212.21 EUR
8+ 209.21 EUR
SKM300GAL12E4 22892334 SKM300GAL12E4 22892334 SEMIKRON DANFOSS SKM300GAL12E4-DTE.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Case: SEMITRANS3
Application: for UPS; frequency changer; Inverter; photovoltaics
Collector current: 324A
Pulsed collector current: 900A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
1+173.26 EUR
8+ 171.17 EUR
SKM300GB066D 21915520 SKM300GB066D 21915520 SEMIKRON DANFOSS SKM300GB066D.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Mechanical mounting: screw
Application: for UPS; frequency changer; Inverter; photovoltaics
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: SEMITRANS3
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
1+241.67 EUR
SKM300GB126D 22890633 SKM300GB126D 22890633 SEMIKRON DANFOSS SKM300GB126D.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Mechanical mounting: screw
Pulsed collector current: 400A
Application: frequency changer; Inverter
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Semiconductor structure: transistor/transistor
Case: SEMITRANS3
Gate-emitter voltage: ±20V
Collector current: 200A
Topology: IGBT half-bridge
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
1+289.99 EUR
8+ 286 EUR
SKM400GAL125D 22890750 SKM400GAL125D 22890750 SEMIKRON DANFOSS SKM400GAL125D.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SEMITRANS3
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
1+331.1 EUR
8+ 318.53 EUR
SKM400GAL12E4 22892314 SKM400GAL12E4 22892314 SEMIKRON DANFOSS SKM300GAL12E4-DTE.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 324A
Case: SEMITRANS3
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
1+206.25 EUR
8+ 198.41 EUR
SKM400GAR125D 21915960 SKM400GAR125D 21915960 SEMIKRON DANFOSS SKM400GAR125D.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; D56
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SEMITRANS3
Version: D56
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
1+346.19 EUR
SKM400GB126D 22890635 SKM400GB126D 22890635 SEMIKRON DANFOSS SKM400GB126D -DTE.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 327A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 327A
Case: SEMITRANS3
Version: D56
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
1+329.04 EUR
SKM50GD125D 21918010 SKM50GD125D 21918010 SEMIKRON DANFOSS SKM50GD125D.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Mechanical mounting: screw
Application: for UPS; frequency changer; Inverter; photovoltaics
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Electrical mounting: FASTON connectors
Version: D67
Type of module: IGBT
Topology: IGBT three-phase bridge
Case: SEMITRANS6
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
1+263.38 EUR
SKM600GA17E4 22895080 SKM600GA17E4 22895080 SEMIKRON DANFOSS SKM600GA17E4-DTE.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 775A; SEMITRANS4
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 775A
Case: SEMITRANS4
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 3420A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
1+301.29 EUR
SKM75GB12T4 22892010 SKM75GB12T4 22892010 SEMIKRON DANFOSS SKM75GB12T4.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 88A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 88A
Case: SEMITRANS2
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
1+83.03 EUR
SKM75GB12V 22892013 SKM75GB12V 22892013 SEMIKRON DANFOSS SKM75GB12V.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Mechanical mounting: screw
Version: D61
Collector current: 75A
Pulsed collector current: 225A
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: SEMITRANS2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
1+94.71 EUR
8+ 90.73 EUR
SKM75GB176D 22890850 SKM75GB176D 22890850 SEMIKRON DANFOSS SKM75GB176D.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Version: D61
Case: SEMITRANS2
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Application: for UPS; frequency changer; Inverter; photovoltaics
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 100A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SKM75GB17E4 22895030 SKM75GB17E4 22895030 SEMIKRON DANFOSS SKM75GB17E4-DTE.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Mechanical mounting: screw
Collector current: 75A
Pulsed collector current: 510A
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: SEMITRANS2
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)
1+98.74 EUR
8+ 94.59 EUR
SKW25N120 SKW25N120 INFINEON TECHNOLOGIES SKW25N120.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 313W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 84A
Turn-on time: 85ns
Turn-off time: 760ns
Type of transistor: IGBT
Power dissipation: 313W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
4+20.78 EUR
5+ 14.31 EUR
6+ 13.54 EUR
30+ 13.53 EUR
Mindestbestellmenge: 4
STGB10NB37LZT4 STGB10NB37LZT4 STMicroelectronics STGB10NB37LZT4.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 440V; 20A; 125W; D2PAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 440V
Collector current: 20A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: ignition systems
Anzahl je Verpackung: 1 Stücke
auf Bestellung 521 Stücke:
Lieferzeit 7-14 Tag (e)
21+3.43 EUR
24+ 3.09 EUR
31+ 2.36 EUR
33+ 2.23 EUR
Mindestbestellmenge: 21
STGB10NC60HDT4 STGB10NC60HDT4 STMicroelectronics stgb10nc60hd.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 65W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 65W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 291 Stücke:
Lieferzeit 7-14 Tag (e)
34+2.14 EUR
39+ 1.87 EUR
50+ 1.46 EUR
52+ 1.39 EUR
Mindestbestellmenge: 34
STGD10NC60KDT4 STGD10NC60KDT4 STMicroelectronics STGP10NC60KD.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 62W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 62W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2264 Stücke:
Lieferzeit 7-14 Tag (e)
43+1.69 EUR
48+ 1.5 EUR
55+ 1.3 EUR
59+ 1.23 EUR
500+ 1.19 EUR
Mindestbestellmenge: 43
STGD6NC60HDT4 STGD6NC60HDT4 STMicroelectronics stgd6nc60hdt4.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 56W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 56W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 13.6nC
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2189 Stücke:
Lieferzeit 7-14 Tag (e)
48+1.52 EUR
53+ 1.36 EUR
73+ 0.99 EUR
77+ 0.93 EUR
Mindestbestellmenge: 48
STGF10NB60SD STGF10NB60SD STMicroelectronics stgf10nb60sd.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 25W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 23A
Power dissipation: 25W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 198 Stücke:
Lieferzeit 7-14 Tag (e)
28+2.56 EUR
32+ 2.3 EUR
36+ 1.99 EUR
39+ 1.87 EUR
250+ 1.8 EUR
Mindestbestellmenge: 28
STGF14NC60KD STGF14NC60KD STMicroelectronics STGF14NC60KD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 28W; TO220FP
Kind of package: tube
Case: TO220FP
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 7A
Pulsed collector current: 50A
Type of transistor: IGBT
Power dissipation: 28W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 34.4nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 148 Stücke:
Lieferzeit 7-14 Tag (e)
46+1.57 EUR
51+ 1.42 EUR
59+ 1.23 EUR
65+ 1.1 EUR
69+ 1.04 EUR
Mindestbestellmenge: 46
STGF19NC60HD STMicroelectronics en.CD00144165.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 32W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 32W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
12+5.96 EUR
22+ 3.25 EUR
2000+ 1.96 EUR
6000+ 1.94 EUR
Mindestbestellmenge: 12
STGF3NC120HD STGF3NC120HD STMicroelectronics STGx3NC120HD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 3A; 25W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 3A
Power dissipation: 25W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 42 Stücke:
Lieferzeit 7-14 Tag (e)
30+2.43 EUR
33+ 2.17 EUR
42+ 1.7 EUR
250+ 1.62 EUR
Mindestbestellmenge: 30
STGF7H60DF STGF7H60DF STMicroelectronics STG_7H60DF.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 24W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 24W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 28A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 123 Stücke:
Lieferzeit 7-14 Tag (e)
44+1.63 EUR
49+ 1.47 EUR
53+ 1.36 EUR
67+ 1.07 EUR
71+ 1.02 EUR
2000+ 1 EUR
6000+ 0.97 EUR
Mindestbestellmenge: 44
STGF7NB60SL STGF7NB60SL STMicroelectronics stgf7nb60sl.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 25W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 25W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 79 Stücke:
Lieferzeit 7-14 Tag (e)
27+2.66 EUR
30+ 2.39 EUR
39+ 1.87 EUR
41+ 1.77 EUR
Mindestbestellmenge: 27
STGP10M65DF2 STGP10M65DF2 STMicroelectronics STGP10M65DF2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 115W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 115W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 68 Stücke:
Lieferzeit 7-14 Tag (e)
45+1.6 EUR
47+ 1.53 EUR
53+ 1.37 EUR
57+ 1.26 EUR
61+ 1.19 EUR
Mindestbestellmenge: 45
STGP10NC60KD STGP10NC60KD STMicroelectronics STGP10NC60KD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 65W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 65W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 260 Stücke:
Lieferzeit 7-14 Tag (e)
43+1.69 EUR
48+ 1.52 EUR
55+ 1.32 EUR
62+ 1.16 EUR
65+ 1.1 EUR
Mindestbestellmenge: 43
STGP14NC60KD STGP14NC60KD STMicroelectronics STGP14NC60KD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 34.4nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.15 EUR
11+ 6.51 EUR
30+ 2.39 EUR
250+ 1.4 EUR
Mindestbestellmenge: 10
STGP19NC60HD STGP19NC60HD STMicroelectronics stgp19nc60hd.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 130W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 130W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
18+3.98 EUR
19+ 3.76 EUR
Mindestbestellmenge: 18
STGP20V60DF STGP20V60DF STMicroelectronics STGx20V60DF.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
18+3.98 EUR
21+ 3.4 EUR
Mindestbestellmenge: 18
STGP6NC60HD STGP6NC60HD STMicroelectronics stgp6nc60hd.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 56W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 56W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 71 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.46 EUR
55+ 1.32 EUR
71+ 1 EUR
Mindestbestellmenge: 50
STGP7NC60HD STGP7NC60HD STMicroelectronics STGP7NC60HD.pdf description Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; TO220AB
Kind of package: tube
Case: TO220AB
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 14A
Pulsed collector current: 50A
Type of transistor: IGBT
Power dissipation: 80W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 173 Stücke:
Lieferzeit 7-14 Tag (e)
44+1.63 EUR
49+ 1.47 EUR
56+ 1.29 EUR
65+ 1.12 EUR
68+ 1.06 EUR
Mindestbestellmenge: 44
STGP8NC60KD STGP8NC60KD STMicroelectronics stgp8nc60kd.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 8A; 65W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8A
Power dissipation: 65W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 146 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.44 EUR
55+ 1.32 EUR
62+ 1.16 EUR
72+ 1 EUR
76+ 0.94 EUR
Mindestbestellmenge: 50
STGW19NC60HD STGW19NC60HD STMicroelectronics stgw19nc60hd.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 21A; 140W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 21A
Power dissipation: 140W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.46 EUR
17+ 4.2 EUR
120+ 2.65 EUR
Mindestbestellmenge: 16
STGW20NC60VD STGW20NC60VD STMicroelectronics STGW20NC60VD.pdf description Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3
Kind of package: tube
Case: TO247-3
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Type of transistor: IGBT
Power dissipation: 200W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.14µC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 271 Stücke:
Lieferzeit 7-14 Tag (e)
22+3.37 EUR
24+ 3.03 EUR
31+ 2.35 EUR
33+ 2.22 EUR
120+ 2.13 EUR
Mindestbestellmenge: 22
STGW20V60DF STGW20V60DF STMicroelectronics STGx20V60DF.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.15 EUR
12+ 5.96 EUR
30+ 3.55 EUR
Mindestbestellmenge: 10
STGW28IH125DF STGW28IH125DF STMicroelectronics STGW28IH125DF.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.25kV; 30A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.25kV
Collector current: 30A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.76 EUR
17+ 4.29 EUR
22+ 3.37 EUR
23+ 3.19 EUR
Mindestbestellmenge: 16
STGW30NC60KD STGW30NC60KD STMicroelectronics STGW30NC60KD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 125A
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 264 Stücke:
Lieferzeit 7-14 Tag (e)
18+4.18 EUR
20+ 3.69 EUR
25+ 2.87 EUR
27+ 2.72 EUR
Mindestbestellmenge: 18
STGW30NC60WD STGW30NC60WD STMicroelectronics STGW30NC60WD-dte.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 171 Stücke:
Lieferzeit 7-14 Tag (e)
12+6.35 EUR
13+ 5.81 EUR
16+ 4.66 EUR
17+ 4.4 EUR
30+ 4.23 EUR
Mindestbestellmenge: 12
STGW30V60DF STGW30V60DF STMicroelectronics STGW30V60DF.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 258W; TO247-3
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 120A
Type of transistor: IGBT
Power dissipation: 258W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 163nC
Mounting: THT
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 190 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.88 EUR
17+ 4.39 EUR
22+ 3.36 EUR
23+ 3.17 EUR
Mindestbestellmenge: 15
STGW39NC60VD STGW39NC60VD STMicroelectronics STGW39NC60VD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 220A
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 96 Stücke:
Lieferzeit 7-14 Tag (e)
15+5.08 EUR
16+ 4.59 EUR
20+ 3.68 EUR
21+ 3.47 EUR
120+ 3.35 EUR
Mindestbestellmenge: 15
STGW40V60DF STGW40V60DF STMicroelectronics stgw40v60df.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 80A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 80A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 226nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW60H65DFB STGW60H65DFB STMicroelectronics en.DM00079448.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.92 EUR
12+ 6.23 EUR
16+ 4.68 EUR
17+ 4.43 EUR
3000+ 4.29 EUR
9000+ 4.26 EUR
Mindestbestellmenge: 11
STGW75H65DFB2-4 STGW75H65DFB2-4 STMicroelectronics stgw75h65dfb2-4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 71A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 71A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 207nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
7+11.55 EUR
9+ 7.99 EUR
30+ 7.98 EUR
Mindestbestellmenge: 7
STGWA15H120DF2 STMicroelectronics en.DM00066773.pdf STGWA15H120DF2 THT IGBT transistors
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
14+5.15 EUR
22+ 3.3 EUR
23+ 3.13 EUR
9000+ 3.06 EUR
Mindestbestellmenge: 14
STGWA25M120DF3 STGWA25M120DF3 STMicroelectronics STGWA25M120DF3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 375W; TO247-3
Type of transistor: IGBT
Pulsed collector current: 100A
Power dissipation: 375W
Collector current: 25A
Gate-emitter voltage: ±30V
Collector-emitter voltage: 1.2kV
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 85nC
Case: TO247-3
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
11+7.06 EUR
12+ 6.35 EUR
16+ 4.62 EUR
17+ 4.38 EUR
Mindestbestellmenge: 11
STGWA30H65DFB STGWA30H65DFB STMicroelectronics STGWA30H65DFB.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 260W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 260W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.85 EUR
17+ 4.36 EUR
20+ 3.58 EUR
22+ 3.39 EUR
Mindestbestellmenge: 15
STGWA40H65DFB2 STGWA40H65DFB2 STMicroelectronics STGWA40H65DFB2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 45A; 230W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 45A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.56 EUR
17+ 4.2 EUR
Mindestbestellmenge: 16
STGWA75H65DFB2 STGWA75H65DFB2 STMicroelectronics STGWA75H65DFB2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 71A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 71A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 207nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
11+7.14 EUR
12+ 6.42 EUR
15+ 4.92 EUR
16+ 4.65 EUR
Mindestbestellmenge: 11
STGWA75M65DF2 STMicroelectronics en.DM00249589.pdf STGWA75M65DF2 THT IGBT transistors
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
4+17.88 EUR
8+ 8.94 EUR
30+ 6.98 EUR
Mindestbestellmenge: 4
STGWT60H65DFB STGWT60H65DFB STMicroelectronics STGWx60H65DFB.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 236 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.85 EUR
12+ 6.16 EUR
16+ 4.72 EUR
17+ 4.46 EUR
Mindestbestellmenge: 11
STGYA50H120DF2 STMicroelectronics stgya50h120df2.pdf STGYA50H120DF2 THT IGBT transistors
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
6+14.2 EUR
8+ 9.45 EUR
Mindestbestellmenge: 6
TC1411CPA TC1411CPA MICROCHIP TECHNOLOGY _Driver_SG.pdf tc1411_n.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; 1A; Ch: 1; 4.5÷16V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: 1A
Number of channels: 1
Mounting: THT
Operating temperature: 0...70°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Operating voltage: 4.5...16V
Kind of output: inverting
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
14+5.11 EUR
37+ 1.93 EUR
Mindestbestellmenge: 14
TC1411NEOA TC1411NEOA MICROCHIP TECHNOLOGY _Driver_SG.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 1A; Ch: 1; 4.5÷16V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 1A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Operating voltage: 4.5...16V
Kind of output: non-inverting
Anzahl je Verpackung: 1 Stücke
auf Bestellung 223 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.44 EUR
53+ 1.36 EUR
66+ 1.09 EUR
70+ 1.03 EUR
Mindestbestellmenge: 50
TC1412NCOA TC1412NCOA MICROCHIP TECHNOLOGY _Driver_SG.pdf tc1412_n.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 2A; Ch: 1; 4.5÷16V
Mounting: SMD
Operating temperature: 0...70°C
Output current: 2A
Case: SO8
Kind of integrated circuit: MOSFET gate driver
Kind of output: non-inverting
Pulse fall time: 18ns
Operating voltage: 4.5...16V
Impulse rise time: 18ns
Type of integrated circuit: driver
Number of channels: 1
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
4+17.88 EUR
5+ 14.3 EUR
12+ 5.96 EUR
32+ 2.23 EUR
Mindestbestellmenge: 4
TC1413NCOA TC1413NCOA MICROCHIP TECHNOLOGY _Driver_SG.pdf tc1413_n.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 3A; Ch: 1; 4.5÷16V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 3A
Number of channels: 1
Mounting: SMD
Operating temperature: 0...70°C
Impulse rise time: 20ns
Pulse fall time: 20ns
Operating voltage: 4.5...16V
Kind of output: non-inverting
Anzahl je Verpackung: 1 Stücke
auf Bestellung 62 Stücke:
Lieferzeit 7-14 Tag (e)
31+2.35 EUR
33+ 2.2 EUR
38+ 1.9 EUR
40+ 1.8 EUR
100+ 1.73 EUR
Mindestbestellmenge: 31
SKM200GB125D 22890620 SKM200GB125D.pdf
SKM200GB125D 22890620
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 160A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 160A
Case: SEMITRANS3
Version: D56
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SKM200GB12T4 22892060 SKM200GB12T4.pdf
SKM200GB12T4 22892060
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 241A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 241A
Case: SEMITRANS3
Version: D56
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1+165.28 EUR
5+ 163.02 EUR
SKM200GB176D 22890700 SKM200GB176D.pdf
SKM200GB176D 22890700
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 180A
Application: for UPS; frequency changer; Inverter; photovoltaics
Type of module: IGBT
Topology: IGBT half-bridge
Case: SEMITRANS3
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 180A
Pulsed collector current: 300A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1+242.56 EUR
SKM300GA12T4 22892120 SKM300GA12T4.pdf
SKM300GA12T4 22892120
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 300A; SEMITRANS4
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SEMITRANS4
Version: D59
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1+127.5 EUR
SKM300GA12V 22892123 SKM300GA12V.pdf
SKM300GA12V 22892123
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 300A; SEMITRANS4
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: screw
Mechanical mounting: screw
Version: D59
Type of module: IGBT
Case: SEMITRANS4
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 300A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1+212.21 EUR
8+ 209.21 EUR
SKM300GAL12E4 22892334 SKM300GAL12E4-DTE.pdf
SKM300GAL12E4 22892334
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Case: SEMITRANS3
Application: for UPS; frequency changer; Inverter; photovoltaics
Collector current: 324A
Pulsed collector current: 900A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1+173.26 EUR
8+ 171.17 EUR
SKM300GB066D 21915520 SKM300GB066D.pdf
SKM300GB066D 21915520
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Mechanical mounting: screw
Application: for UPS; frequency changer; Inverter; photovoltaics
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: SEMITRANS3
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1+241.67 EUR
SKM300GB126D 22890633 SKM300GB126D.pdf
SKM300GB126D 22890633
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Mechanical mounting: screw
Pulsed collector current: 400A
Application: frequency changer; Inverter
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Semiconductor structure: transistor/transistor
Case: SEMITRANS3
Gate-emitter voltage: ±20V
Collector current: 200A
Topology: IGBT half-bridge
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1+289.99 EUR
8+ 286 EUR
SKM400GAL125D 22890750 SKM400GAL125D.pdf
SKM400GAL125D 22890750
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SEMITRANS3
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1+331.1 EUR
8+ 318.53 EUR
SKM400GAL12E4 22892314 SKM300GAL12E4-DTE.pdf
SKM400GAL12E4 22892314
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 324A
Case: SEMITRANS3
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1+206.25 EUR
8+ 198.41 EUR
SKM400GAR125D 21915960 SKM400GAR125D.pdf
SKM400GAR125D 21915960
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; D56
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SEMITRANS3
Version: D56
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1+346.19 EUR
SKM400GB126D 22890635 SKM400GB126D -DTE.pdf
SKM400GB126D 22890635
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 327A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 327A
Case: SEMITRANS3
Version: D56
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1+329.04 EUR
SKM50GD125D 21918010 SKM50GD125D.pdf
SKM50GD125D 21918010
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Mechanical mounting: screw
Application: for UPS; frequency changer; Inverter; photovoltaics
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Electrical mounting: FASTON connectors
Version: D67
Type of module: IGBT
Topology: IGBT three-phase bridge
Case: SEMITRANS6
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1+263.38 EUR
SKM600GA17E4 22895080 SKM600GA17E4-DTE.pdf
SKM600GA17E4 22895080
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 775A; SEMITRANS4
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 775A
Case: SEMITRANS4
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 3420A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1+301.29 EUR
SKM75GB12T4 22892010 SKM75GB12T4.pdf
SKM75GB12T4 22892010
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 88A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 88A
Case: SEMITRANS2
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1+83.03 EUR
SKM75GB12V 22892013 SKM75GB12V.pdf
SKM75GB12V 22892013
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Mechanical mounting: screw
Version: D61
Collector current: 75A
Pulsed collector current: 225A
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: SEMITRANS2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1+94.71 EUR
8+ 90.73 EUR
SKM75GB176D 22890850 SKM75GB176D.pdf
SKM75GB176D 22890850
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Version: D61
Case: SEMITRANS2
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Application: for UPS; frequency changer; Inverter; photovoltaics
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 100A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SKM75GB17E4 22895030 SKM75GB17E4-DTE.pdf
SKM75GB17E4 22895030
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Mechanical mounting: screw
Collector current: 75A
Pulsed collector current: 510A
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: SEMITRANS2
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1+98.74 EUR
8+ 94.59 EUR
SKW25N120 SKW25N120.pdf
SKW25N120
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 313W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 84A
Turn-on time: 85ns
Turn-off time: 760ns
Type of transistor: IGBT
Power dissipation: 313W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
4+20.78 EUR
5+ 14.31 EUR
6+ 13.54 EUR
30+ 13.53 EUR
Mindestbestellmenge: 4
STGB10NB37LZT4 STGB10NB37LZT4.pdf
STGB10NB37LZT4
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 440V; 20A; 125W; D2PAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 440V
Collector current: 20A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: ignition systems
Anzahl je Verpackung: 1 Stücke
auf Bestellung 521 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
21+3.43 EUR
24+ 3.09 EUR
31+ 2.36 EUR
33+ 2.23 EUR
Mindestbestellmenge: 21
STGB10NC60HDT4 stgb10nc60hd.pdf
STGB10NC60HDT4
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 65W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 65W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 291 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
34+2.14 EUR
39+ 1.87 EUR
50+ 1.46 EUR
52+ 1.39 EUR
Mindestbestellmenge: 34
STGD10NC60KDT4 STGP10NC60KD.pdf
STGD10NC60KDT4
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 62W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 62W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2264 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
43+1.69 EUR
48+ 1.5 EUR
55+ 1.3 EUR
59+ 1.23 EUR
500+ 1.19 EUR
Mindestbestellmenge: 43
STGD6NC60HDT4 stgd6nc60hdt4.pdf
STGD6NC60HDT4
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 56W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 56W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 13.6nC
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2189 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
48+1.52 EUR
53+ 1.36 EUR
73+ 0.99 EUR
77+ 0.93 EUR
Mindestbestellmenge: 48
STGF10NB60SD stgf10nb60sd.pdf
STGF10NB60SD
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 25W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 23A
Power dissipation: 25W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 198 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
28+2.56 EUR
32+ 2.3 EUR
36+ 1.99 EUR
39+ 1.87 EUR
250+ 1.8 EUR
Mindestbestellmenge: 28
STGF14NC60KD STGF14NC60KD.pdf
STGF14NC60KD
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 28W; TO220FP
Kind of package: tube
Case: TO220FP
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 7A
Pulsed collector current: 50A
Type of transistor: IGBT
Power dissipation: 28W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 34.4nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 148 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
46+1.57 EUR
51+ 1.42 EUR
59+ 1.23 EUR
65+ 1.1 EUR
69+ 1.04 EUR
Mindestbestellmenge: 46
STGF19NC60HD en.CD00144165.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 32W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 32W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
12+5.96 EUR
22+ 3.25 EUR
2000+ 1.96 EUR
6000+ 1.94 EUR
Mindestbestellmenge: 12
STGF3NC120HD STGx3NC120HD.pdf
STGF3NC120HD
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 3A; 25W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 3A
Power dissipation: 25W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 42 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
30+2.43 EUR
33+ 2.17 EUR
42+ 1.7 EUR
250+ 1.62 EUR
Mindestbestellmenge: 30
STGF7H60DF STG_7H60DF.pdf
STGF7H60DF
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 24W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 24W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 28A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 123 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
44+1.63 EUR
49+ 1.47 EUR
53+ 1.36 EUR
67+ 1.07 EUR
71+ 1.02 EUR
2000+ 1 EUR
6000+ 0.97 EUR
Mindestbestellmenge: 44
STGF7NB60SL stgf7nb60sl.pdf
STGF7NB60SL
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 25W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 25W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 79 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
27+2.66 EUR
30+ 2.39 EUR
39+ 1.87 EUR
41+ 1.77 EUR
Mindestbestellmenge: 27
STGP10M65DF2 STGP10M65DF2.pdf
STGP10M65DF2
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 115W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 115W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 68 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
45+1.6 EUR
47+ 1.53 EUR
53+ 1.37 EUR
57+ 1.26 EUR
61+ 1.19 EUR
Mindestbestellmenge: 45
STGP10NC60KD STGP10NC60KD.pdf
STGP10NC60KD
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 65W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 65W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 260 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
43+1.69 EUR
48+ 1.52 EUR
55+ 1.32 EUR
62+ 1.16 EUR
65+ 1.1 EUR
Mindestbestellmenge: 43
STGP14NC60KD STGP14NC60KD.pdf
STGP14NC60KD
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 34.4nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+7.15 EUR
11+ 6.51 EUR
30+ 2.39 EUR
250+ 1.4 EUR
Mindestbestellmenge: 10
STGP19NC60HD stgp19nc60hd.pdf
STGP19NC60HD
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 130W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 130W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
18+3.98 EUR
19+ 3.76 EUR
Mindestbestellmenge: 18
STGP20V60DF STGx20V60DF.pdf
STGP20V60DF
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
18+3.98 EUR
21+ 3.4 EUR
Mindestbestellmenge: 18
STGP6NC60HD stgp6nc60hd.pdf
STGP6NC60HD
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 56W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 56W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 71 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
50+1.46 EUR
55+ 1.32 EUR
71+ 1 EUR
Mindestbestellmenge: 50
STGP7NC60HD description STGP7NC60HD.pdf
STGP7NC60HD
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; TO220AB
Kind of package: tube
Case: TO220AB
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 14A
Pulsed collector current: 50A
Type of transistor: IGBT
Power dissipation: 80W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 173 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
44+1.63 EUR
49+ 1.47 EUR
56+ 1.29 EUR
65+ 1.12 EUR
68+ 1.06 EUR
Mindestbestellmenge: 44
STGP8NC60KD stgp8nc60kd.pdf
STGP8NC60KD
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 8A; 65W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8A
Power dissipation: 65W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 146 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
50+1.44 EUR
55+ 1.32 EUR
62+ 1.16 EUR
72+ 1 EUR
76+ 0.94 EUR
Mindestbestellmenge: 50
STGW19NC60HD stgw19nc60hd.pdf
STGW19NC60HD
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 21A; 140W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 21A
Power dissipation: 140W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
16+4.46 EUR
17+ 4.2 EUR
120+ 2.65 EUR
Mindestbestellmenge: 16
STGW20NC60VD description STGW20NC60VD.pdf
STGW20NC60VD
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3
Kind of package: tube
Case: TO247-3
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Type of transistor: IGBT
Power dissipation: 200W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.14µC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 271 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
22+3.37 EUR
24+ 3.03 EUR
31+ 2.35 EUR
33+ 2.22 EUR
120+ 2.13 EUR
Mindestbestellmenge: 22
STGW20V60DF STGx20V60DF.pdf
STGW20V60DF
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+7.15 EUR
12+ 5.96 EUR
30+ 3.55 EUR
Mindestbestellmenge: 10
STGW28IH125DF STGW28IH125DF.pdf
STGW28IH125DF
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.25kV; 30A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.25kV
Collector current: 30A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
16+4.76 EUR
17+ 4.29 EUR
22+ 3.37 EUR
23+ 3.19 EUR
Mindestbestellmenge: 16
STGW30NC60KD STGW30NC60KD.pdf
STGW30NC60KD
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 125A
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 264 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
18+4.18 EUR
20+ 3.69 EUR
25+ 2.87 EUR
27+ 2.72 EUR
Mindestbestellmenge: 18
STGW30NC60WD STGW30NC60WD-dte.pdf
STGW30NC60WD
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 171 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
12+6.35 EUR
13+ 5.81 EUR
16+ 4.66 EUR
17+ 4.4 EUR
30+ 4.23 EUR
Mindestbestellmenge: 12
STGW30V60DF STGW30V60DF.pdf
STGW30V60DF
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 258W; TO247-3
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 120A
Type of transistor: IGBT
Power dissipation: 258W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 163nC
Mounting: THT
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 190 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
15+4.88 EUR
17+ 4.39 EUR
22+ 3.36 EUR
23+ 3.17 EUR
Mindestbestellmenge: 15
STGW39NC60VD STGW39NC60VD.pdf
STGW39NC60VD
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 220A
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 96 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
15+5.08 EUR
16+ 4.59 EUR
20+ 3.68 EUR
21+ 3.47 EUR
120+ 3.35 EUR
Mindestbestellmenge: 15
STGW40V60DF stgw40v60df.pdf
STGW40V60DF
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 80A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 80A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 226nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGW60H65DFB en.DM00079448.pdf
STGW60H65DFB
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
11+6.92 EUR
12+ 6.23 EUR
16+ 4.68 EUR
17+ 4.43 EUR
3000+ 4.29 EUR
9000+ 4.26 EUR
Mindestbestellmenge: 11
STGW75H65DFB2-4 stgw75h65dfb2-4.pdf
STGW75H65DFB2-4
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 71A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 71A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 207nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
7+11.55 EUR
9+ 7.99 EUR
30+ 7.98 EUR
Mindestbestellmenge: 7
STGWA15H120DF2 en.DM00066773.pdf
Hersteller: STMicroelectronics
STGWA15H120DF2 THT IGBT transistors
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
14+5.15 EUR
22+ 3.3 EUR
23+ 3.13 EUR
9000+ 3.06 EUR
Mindestbestellmenge: 14
STGWA25M120DF3 STGWA25M120DF3.pdf
STGWA25M120DF3
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 375W; TO247-3
Type of transistor: IGBT
Pulsed collector current: 100A
Power dissipation: 375W
Collector current: 25A
Gate-emitter voltage: ±30V
Collector-emitter voltage: 1.2kV
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 85nC
Case: TO247-3
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
11+7.06 EUR
12+ 6.35 EUR
16+ 4.62 EUR
17+ 4.38 EUR
Mindestbestellmenge: 11
STGWA30H65DFB STGWA30H65DFB.pdf
STGWA30H65DFB
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 260W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 260W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
15+4.85 EUR
17+ 4.36 EUR
20+ 3.58 EUR
22+ 3.39 EUR
Mindestbestellmenge: 15
STGWA40H65DFB2 STGWA40H65DFB2.pdf
STGWA40H65DFB2
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 45A; 230W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 45A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
16+4.56 EUR
17+ 4.2 EUR
Mindestbestellmenge: 16
STGWA75H65DFB2 STGWA75H65DFB2.pdf
STGWA75H65DFB2
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 71A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 71A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 207nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
11+7.14 EUR
12+ 6.42 EUR
15+ 4.92 EUR
16+ 4.65 EUR
Mindestbestellmenge: 11
STGWA75M65DF2 en.DM00249589.pdf
Hersteller: STMicroelectronics
STGWA75M65DF2 THT IGBT transistors
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
4+17.88 EUR
8+ 8.94 EUR
30+ 6.98 EUR
Mindestbestellmenge: 4
STGWT60H65DFB STGWx60H65DFB.pdf
STGWT60H65DFB
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 236 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
11+6.85 EUR
12+ 6.16 EUR
16+ 4.72 EUR
17+ 4.46 EUR
Mindestbestellmenge: 11
STGYA50H120DF2 stgya50h120df2.pdf
Hersteller: STMicroelectronics
STGYA50H120DF2 THT IGBT transistors
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
6+14.2 EUR
8+ 9.45 EUR
Mindestbestellmenge: 6
TC1411CPA _Driver_SG.pdf tc1411_n.pdf
TC1411CPA
Hersteller: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; 1A; Ch: 1; 4.5÷16V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: 1A
Number of channels: 1
Mounting: THT
Operating temperature: 0...70°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Operating voltage: 4.5...16V
Kind of output: inverting
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
14+5.11 EUR
37+ 1.93 EUR
Mindestbestellmenge: 14
TC1411NEOA _Driver_SG.pdf
TC1411NEOA
Hersteller: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 1A; Ch: 1; 4.5÷16V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 1A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Operating voltage: 4.5...16V
Kind of output: non-inverting
Anzahl je Verpackung: 1 Stücke
auf Bestellung 223 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
50+1.44 EUR
53+ 1.36 EUR
66+ 1.09 EUR
70+ 1.03 EUR
Mindestbestellmenge: 50
TC1412NCOA _Driver_SG.pdf tc1412_n.pdf
TC1412NCOA
Hersteller: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 2A; Ch: 1; 4.5÷16V
Mounting: SMD
Operating temperature: 0...70°C
Output current: 2A
Case: SO8
Kind of integrated circuit: MOSFET gate driver
Kind of output: non-inverting
Pulse fall time: 18ns
Operating voltage: 4.5...16V
Impulse rise time: 18ns
Type of integrated circuit: driver
Number of channels: 1
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
4+17.88 EUR
5+ 14.3 EUR
12+ 5.96 EUR
32+ 2.23 EUR
Mindestbestellmenge: 4
TC1413NCOA _Driver_SG.pdf tc1413_n.pdf
TC1413NCOA
Hersteller: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 3A; Ch: 1; 4.5÷16V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 3A
Number of channels: 1
Mounting: SMD
Operating temperature: 0...70°C
Impulse rise time: 20ns
Pulse fall time: 20ns
Operating voltage: 4.5...16V
Kind of output: non-inverting
Anzahl je Verpackung: 1 Stücke
auf Bestellung 62 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
31+2.35 EUR
33+ 2.2 EUR
38+ 1.9 EUR
40+ 1.8 EUR
100+ 1.73 EUR
Mindestbestellmenge: 31
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