Produkte > BCR
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||||
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BCR 08PN E6433 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 08PN H6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | auf Bestellung 17937 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 08PN H6393 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 08PN H6433 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | auf Bestellung 9840 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 101L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 250MW TSLP-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 101T E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 250MW SC75 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 103F E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 250MW TSFP-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 103L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 250MW TSLP-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 103T E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 250MW SC75 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 108 B6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT23 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 108 E6327 | Infineon Technologies | Digital Transistors AF TRANS DIGITAL BJT NPN 50V 100MA | auf Bestellung 42351 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 108 E6327 Produktcode: 196263 | IC > IC andere | Produkt ist nicht verfügbar | ||||||||||||||||||||
BCR 108 E6433 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 108 E6433 | Infineon Technologies | Digital Transistors NPN Silicon Digital TRANSISTOR | auf Bestellung 39857 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 108F E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V TSFP-3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-TSFP-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 108L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V TSLP-3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-TSLP-3-4 Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 108S E6327 | Infineon Technologies | Digital Transistors NPN Silicon Digital TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 108S E6433 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 108S E6433 | Infineon Technologies | Digital Transistors NPN Silicon Digital TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 108S H6327 | Infineon Technologies | Digital Transistors AF DIGITAL TRANSISTOR | auf Bestellung 48728 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 108S H6393 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 108S H6433 | Infineon Technologies | Digital Transistors AF DIGITAL TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 108T E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V 0.1A SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SC75-3D Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 108W H6327 | Infineon Technologies | Digital Transistors AF DIGITAL TRANSISTOR | auf Bestellung 35600 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 10PN E6327 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 10PN H6327 | Infineon | auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR 10PN H6327 | Infineon Technologies | Digital Transistors AF DIGITAL TRANSISTOR | auf Bestellung 22664 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 10PN H6727 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | auf Bestellung 20160 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
BCR 112 E6327 | Infineon Technologies | Digital Transistors NPN Silicon Digital TRANSISTOR | auf Bestellung 49506 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 112F E6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTORS | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 112F E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V TSFP-3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V Supplier Device Package: PG-TSFP-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 140 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 112L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V TSLP-3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V Supplier Device Package: PG-TSLP-3-4 Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 140 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 112T E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V 0.1A SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V Supplier Device Package: PG-SC75-3D Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 140 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 112W H6327 | Infineon | NPN 50V 100mA 140MHz 250mW BCR112WH6327XTSA1 BCR112WH6327 Infineon TBCR112w Anzahl je Verpackung: 500 Stücke | auf Bestellung 2350 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR 112W H6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | auf Bestellung 21556 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 114F E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 250MW TSFP-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 114L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 250MW TSLP-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 114T E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 250MW SC75 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 116 E6327 | Infineon Technologies | Digital Transistors NPN Silicon Digital TRANSISTOR | auf Bestellung 19576 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 116 E6433 | Infineon Technologies | Digital Transistors NPN Silicon Digital TRANSISTOR | auf Bestellung 39728 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 116F E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V TSFP-3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-TSFP-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 116L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V TSLP-3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-TSLP-3-4 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 116L3 E6327 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 116S E6727 | Infineon Technologies | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: PG-SOT363-PO Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 116S H6327 | Infineon Technologies | Digital Transistors AF DIGITAL TRANSISTOR | auf Bestellung 17999 Stücke: Lieferzeit 42-56 Tag (e) |
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BCR 116S H6727 | Infineon Technologies | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: PG-SOT363-PO Part Status: Discontinued at Digi-Key | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 116T E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V 0.1A SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SC75-3D Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 116W H6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | auf Bestellung 35856 Stücke: Lieferzeit 188-202 Tag (e) |
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BCR 119 E6327 | Infineon | NPN 50V 100mA 150MHz 200mW BCR119E6327HTSA1 BCR119E6327 Infineon TBCR119 Anzahl je Verpackung: 500 Stücke | auf Bestellung 2900 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR 119 E6327 | Infineon Technologies | Digital Transistors NPN silicon Digital TRANSISTOR | auf Bestellung 7782 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 119 E6433 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 4.7 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 119F E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V TSFP-3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-TSFP-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 4.7 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 119L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V TSLP-3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-TSLP-3-4 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 4.7 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 119S H6327 | Infineon Technologies | Digital Transistors AF DIGITAL TRANSISTOR | auf Bestellung 2487 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 119T E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V 0.1A SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-SC75-3D Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 4.7 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 129 E6327 | Infineon Technologies | Description: BIPOLAR DIGITAL TRANSISTOR Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-SOT23-3-11 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR 129 E6327 | Infineon Technologies | Digital Transistors NPN Silicon Digital TRANSISTOR | auf Bestellung 20503 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 129 E6327 | Infineon | NPN 50V 100mA 150MHz 200mW BCR129E6327HTSA1 BCR129E6327 Infineon TBCR129 Anzahl je Verpackung: 500 Stücke | auf Bestellung 2790 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR 129F E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V TSFP-3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-TSFP-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 129L3 E6327 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 129L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V TSLP-3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-TSLP-3-4 Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 129S E6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 129S H6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 129T E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V 0.1A SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-SC75-3D Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 129T E6327 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 129W E6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 129W E6327 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 129W H6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 133 B6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: PG-SOT23 Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 130 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 133 E6327 | Infineon Technologies | Digital Transistors AF TRANS DIGITAL BJT NPN 50V 100MA | auf Bestellung 15543 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 133 E6433 | Infineon Technologies | Digital Transistors NPN Silicon Digital TRANSISTOR | auf Bestellung 36307 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 133F B6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V TSFP-3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: PG-TSFP-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 130 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 133F E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V TSFP-3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: PG-TSFP-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 130 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 133L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V TSLP-3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: PG-TSLP-3-4 Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 130 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 133S E6327 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 133S H6327 | Infineon Technologies | Digital Transistors AF DIGITAL TRANSISTOR | auf Bestellung 46770 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 133S H6433 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 133S H6444 | Infineon Technologies | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 130MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: PG-SOT363-PO Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 133T E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V 0.1A SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: PG-SC75-3D Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 130 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 133W E6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 133W H6327 | Infineon | NPN 50V 100mA 130MHz 250mW BCR133WH6327XTSA1 BCR133WH6327 Infineon TBCR133w Anzahl je Verpackung: 500 Stücke | auf Bestellung 2730 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR 133W H6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 135 B6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT23 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 135 B6327 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 135 E6327 | INFINEON | 09+ | auf Bestellung 3018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR 135 E6327 | Infineon Technologies | Digital Transistors NPN Silicon Digital TRANSISTOR | auf Bestellung 75756 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 135 E6433 | Infineon Technologies | Digital Transistors NPN Silicon Digital TRANSISTOR | auf Bestellung 41295 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 135F E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V TSFP-3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-TSFP-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 135L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V TSLP-3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-TSLP-3-4 Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 135S H6327 | Infineon Technologies | Digital Transistors AF DIGITAL TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 135T E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V 0.1A SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SC75-3D Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 135W H6327 | Infineon | auf Bestellung 141000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR 135W H6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | auf Bestellung 35966 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 139F E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 250MW TSFP-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 139L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 250MW TSLP-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 139T E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 250MW SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-SC75-3D Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 22 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 141 E6327 | Infineon Technologies | Digital Transistors NPN Silicon Digital TRANSISTOR | auf Bestellung 24015 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 141 E6327 Produktcode: 174710 | Infineon | Transistoren > Bipolar-Transistoren NPN Gehäuse: SOT-23 fT: 130 MHz Uceo,V: 50 V Ucbo,V: 50 V Ic,A: 0,1 A | auf Bestellung 10 Stück: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR 141 E6433 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 141 E6433 | Infineon Technologies | Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 141F E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V TSFP-3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Supplier Device Package: PG-TSFP-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 130 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 141L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V TSLP-3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Supplier Device Package: PG-TSLP-3-4 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 130 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 141S E6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 141S E6727 | Infineon Technologies | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Frequency - Transition: 130MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: PG-SOT363-PO | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 141S H6327 | Infineon Technologies | Description: BIPOLAR DIGITAL TRANSISTOR Packaging: Bulk Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Frequency - Transition: 130MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: PG-SOT363-6 Part Status: Active | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR 141S H6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | auf Bestellung 1610 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
BCR 141S H6727 | Infineon Technologies | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Frequency - Transition: 130MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: PG-SOT363-PO | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 141S H6727 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 141T E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V 0.1A SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Supplier Device Package: PG-SC75-3D Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 130 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 141W H6327 | Infineon | NPN 50V 100mA 130MHz 250mW BCR141WH6327XTSA1 BCR141WH6327 Infineon TBCR141w Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR 141W H6327 | Infineon Technologies | Digital Transistors AF DIGITAL TRANSISTOR | auf Bestellung 787 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 142 B6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 142 E6327 | Infineon Technologies | Digital Transistors NPN Silicon Digital TRANSISTOR | auf Bestellung 18085 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 142F E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V TSFP-3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-TSFP-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 142L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V TSLP-3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-TSLP-3-4 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 142T E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V 0.1A SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SC75-3D Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 142W H6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | auf Bestellung 11921 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 146 E6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR | auf Bestellung 38913 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 146F E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 250MW TSFP-3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Supplier Device Package: PG-TSFP-3 Current - Collector (Ic) (Max): 70 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 146L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 250MW TSLP-3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Supplier Device Package: PG-TSLP-3-4 Current - Collector (Ic) (Max): 70 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 146T E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 250MW SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Supplier Device Package: PG-SC-75 Current - Collector (Ic) (Max): 70 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 148 B6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 148 B6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 100 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 148 E6327 | Infineon Technologies | Digital Transistors NPN Silicon Digital TRANSISTOR | auf Bestellung 8808 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 148 E6433 | Infineon Technologies | Digital Transistors NPN Silicon Digital Transistor | auf Bestellung 2239 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 148 E6433 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 200mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 148F B6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V TSFP-3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-TSFP-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 100 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 148F E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V TSFP-3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-TSFP-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 100 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 148L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V TSLP-3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-TSLP-3-4 Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 70 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 100 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 148S H6327 | Infineon Technologies | Digital Transistors AF DIGITAL TRANSISTOR | auf Bestellung 12663 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 148S H6327 | Infineon | 2NPN 50V 100mA 100MHz 250mW BCR148SH6327XTSA1 BCR148SH6327 Infineon TBCR148s Anzahl je Verpackung: 500 Stücke | auf Bestellung 2900 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR 148S H6827 | Infineon Technologies | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Frequency - Transition: 100MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: PG-SOT363-PO Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 148T E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V 0.07A SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SC75-3D Part Status: Obsolete Current - Collector (Ic) (Max): 70 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 100 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 148W H6327 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 148W H6327 | Infineon Technologies | Digital Transistors AF DIGITAL TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 148W H6433 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT323 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 100 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 148W H6433 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 149F E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 250MW TSFP-3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-TSFP-3 Current - Collector (Ic) (Max): 70 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 149L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 250MW TSLP-3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-TSLP-3-4 Current - Collector (Ic) (Max): 70 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 149T E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 250MW SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-SC75-3D Current - Collector (Ic) (Max): 70 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 151F E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 250MW TSFP-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 151L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 250MW TSLP-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 151T E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 250MW SC75 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 153F E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 250MW TSFP-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 153L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 250MW TSLP-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 153T E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 50V 0.1A SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Supplier Device Package: PG-SC75-3D Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 158 B6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 50V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT23 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 158 E6327 | Infineon Technologies | Digital Transistors PNP Silicon Digital TRANSISTOR | auf Bestellung 69000 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 158F E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 50V TSFP-3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-TSFP-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 158L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 50V TSLP-3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-TSLP-3-4 Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 158T E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 50V 0.1A SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SC75-3D Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 158W H6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 162 B6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 50V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 162 B6327 | Infineon Technologies | Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 162 E6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR | auf Bestellung 595 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 162 E6327 | Infineon Technologies | Description: BIPOLAR DIGITAL TRANSISTOR Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V Supplier Device Package: PG-SOT23-3-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR 162F E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 50V TSFP-3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V Supplier Device Package: PG-TSFP-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 162L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 50V TSLP-3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V Supplier Device Package: PG-TSLP-3-4 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 162T E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 50V 0.1A SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V Supplier Device Package: PG-SC75-3D Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 164F E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 50V TSFP-3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: PG-TSFP-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 160 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 164L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 50V TSLP-3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: PG-TSLP-3-4 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 160 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 164T E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 50V 0.1A SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: PG-SC75-3D Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 160 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 166 B6327 | Infineon Technologies | Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 166 E6327 | Infineon Technologies | Digital Transistors PNP Silicon Digital TRANSISTOR | auf Bestellung 10752 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 166 E6327 | Infineon | PNP 50V 100mA 160MHz 200mW BCR166E6327HTSA1 BCR166E6327 Infineon TBCR166 Anzahl je Verpackung: 500 Stücke | auf Bestellung 2700 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR 166 E6433 | Infineon Technologies | Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 166F E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 50V TSFP-3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-TSFP-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 160 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 166L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 50V TSLP-3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-TSLP-3-4 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 160 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 166T E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 50V 0.1A SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SC75-3D Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 160 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 166W H6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | auf Bestellung 19709 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 166W H6327 | Infineon | PNP 50V 100mA 160MHz 250mW BCR166WH6327XTSA1 BCR166WH6327 Infineon TBCR166w Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR 169 E6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR | auf Bestellung 163 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 169F E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 50V TSFP-3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-TSFP-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 169L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 50V TSLP-3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-TSLP-3-4 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 169T E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 50V 0.1A SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-SC75-3D Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 179F E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 250MW TSFP-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 179L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 250MW TSLP-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 179T E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 250MW SC75 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 183 B6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 183 B6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 50V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 183 E6327 | Infineon Technologies | Digital Transistors PNP Silicon Digital TRANSISTOR | auf Bestellung 15634 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 183 E6433 | Infineon Technologies | Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR | auf Bestellung 6381 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 183F E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 50V TSFP-3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: PG-TSFP-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 183L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 50V TSLP-3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: PG-TSLP-3-4 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 183S H6327 | Infineon Technologies | Digital Transistors AF DIGITAL TRANSISTOR | auf Bestellung 480 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 183S H6393 | Infineon Technologies | Trans Digital BJT PNP 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 183S H6433 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 183T E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 50V 0.1A SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: PG-SC75-3D Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 183U E6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased PNP Silicon Digital Transistor | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 183W H6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | auf Bestellung 33712 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 185 E6327 | Infineon Technologies | Digital Transistors PNP Silicon Digital TRANSISTOR | auf Bestellung 101378 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 185F E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 50V TSLP-3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-TSLP-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 185L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 50V TSLP-3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-TSLP-3-4 Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 185S H6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | auf Bestellung 14487 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
BCR 185T E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 50V 0.1A SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SC75-3D Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 185W E6327 | Infineon Technologies | Транзистор цифровий smd; Тип стр. = PNP; Ic = 0,1; ft, МГц = 200; hFE = 70 @ 5 мA, 5 В; Icutoff-max = 100 нА; R1, кОм = 10; R2, кОм = 47; Uceo(sat), В @ Ic, Ib = 0,3 @ 500 мкA, 10 мA; Uсe, B = 50; Р, Вт = 0,25 Вт; Тексп, °C = -65...+150; SOT-323-3 | auf Bestellung 8190 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR 185W H6327 | Infineon Technologies | Digital Transistors AF DIGITAL TRANSISTOR | auf Bestellung 9715 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 189F E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 50V TSFP-3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-TSFP-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 22 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 189L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 50V TSLP-3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-TSLP-3-4 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 22 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 189T E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 50V 0.1A SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-SC75-3D Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 22 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 191 E6327 | Infineon Technologies | Digital Transistors PNP Silicon Digital TRANSISTOR | auf Bestellung 29594 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 191F E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 250MW TSFP-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 191L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 250MW TSLP-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 191T E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 250MW SC75 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 191W H6327 | Infineon | PNP 50V 100mA 200MHz 250mW BCR191WH6327XTSA1 BCR191WH6327 Infineon TBCR191w Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR 191W H6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | auf Bestellung 3930 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 192 B6327 | Infineon Technologies | Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 192 E6327 | Infineon Technologies | Description: BIPOLAR DIGITAL TRANSISTOR Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT23-3-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR 192 E6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR | auf Bestellung 17629 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 192 E6327 | Infineon | PNP transistor bipolar 50V 100mA BCR192E6785 BCR192E6327 TBCR192e Anzahl je Verpackung: 100 Stücke | auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR 192F E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 250MW TSFP-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 192L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 250MW TSLP-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 192T E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 250MW SC75 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 192W H6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | auf Bestellung 997 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 192W H6327 | Infineon | Transistor PNP bipolar 50V 100mA BCR192WH6327XT BCR192WH6327 TBCR192wh Anzahl je Verpackung: 100 Stücke | auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR 196 | Infineon Technologies | Bipolar Transistors - Pre-Biased | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 196 E6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 196F E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 250MW TSFP-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 196F E6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTORS | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 196L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 250MW TSLP-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 196L3 E6327 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 196T E6327 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 196T E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 250MW SC75 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 196W E6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 196W H6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 196W H6327 | Infineon Technologies | Trans Digital BJT PNP 50V 70mA Automotive AEC-Q101 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 198 B6327 | Infineon Technologies | Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 198 E6327 | Rochester Electronics, LLC | Description: BIPOLAR DIGITAL TRANSISTOR | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR 198 E6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 198 E6327 | Infineon | PNP 50V 100mA 190MHz 200mW BCR198E6327HTSA1 BCR198E6327 Infineon TBCR198 Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR 198 E6433 | Infineon Technologies | Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR | auf Bestellung 8558 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
BCR 198F E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 250MW TSFP-3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-TSFP-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 190 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 198L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 250MW TSLP-3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-TSLP-3-4 Current - Collector (Ic) (Max): 70 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 190 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 198S H6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | auf Bestellung 46 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
BCR 198T E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 250MW SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SC-75 Current - Collector (Ic) (Max): 70 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 190 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 198W H6327 | Infineon Technologies | Digital Transistors AF DIGITAL TRANSISTOR | auf Bestellung 5826 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 199F E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 250MW TSFP-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 199L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 250MW TSLP-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 199T E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 250MW SC75 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 205W H6327 | Infineon Technologies | LED Lighting Drivers Ultra lowdropout LED controllr up to 80mA | auf Bestellung 7485 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
BCR 22PN E6327 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 22PN H6327 | Infineon Technologies | Digital Transistors AF DIGITAL TRANSISTOR | auf Bestellung 89317 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 22PN H6433 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | auf Bestellung 17918 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 22PN H6727 | Infineon Technologies | Description: TRANS NPN/PNP PREBIAS SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Frequency - Transition: 130MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: PG-SOT363-PO Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 320U E6327 | Infineon Technologies | LED Lighting Drivers LED DRIVER | auf Bestellung 49614 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 321U E6327 | Infineon Technologies | LED Lighting Drivers LED DRIVER | auf Bestellung 5992 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 35PN E6327 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 35PN H6327 | Infineon Technologies | Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: PG-SOT363-6 Part Status: Active | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR 35PN H6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | auf Bestellung 9088 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 35PN H6433 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 400W | Infineon Technologies | Power Management Specialised - PMIC | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 400W E6327 | Infineon Technologies | Power Management Specialised - PMIC ACTIVE BIAS CNTRLR 18 V 3.0 mA | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 400W E6327 | Infineon Technologies | Active Bias Controller | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 400W E6327 | Infineon | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR 400W H6327 | Infineon Technologies | Power Management Specialised - PMIC Active Bias Controller | auf Bestellung 292699 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 400W H6327 | Infineon Technologies | Active Bias Controller Automotive AEC-Q101 4-Pin(3+Tab) SOT-343 | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR 400W H6327 | Infineon Technologies | Active Bias Controller Automotive AEC-Q101 4-Pin(3+Tab) SOT-343 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 401R E6327 | Infineon Technologies | LED Lighting Drivers AF SMALL INTEGRATION IC LED DRVR 18V | auf Bestellung 2987 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 401R E6433 | Infineon Technologies | LED Lighting Drivers LED Driver 18V 60mA | auf Bestellung 10000 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
BCR 401U E6327 | Infineon | auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR 401U E6327 | Infineon Technologies | LED Lighting Drivers LED Driver | auf Bestellung 400453 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 401W H6327 | Infineon Technologies | LED Lighting Drivers LED Driver 18V 10MA | auf Bestellung 49254 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 402R E6327 Produktcode: 58041 | Verschiedene Bauteile > Verschiedene Bauteile 2 | Produkt ist nicht verfügbar | ||||||||||||||||||||
BCR 402R E6327 | Infineon Technologies | LED Lighting Drivers AF SMALL INTEGRATION IC LED DRVR 18V | auf Bestellung 570 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 402R E6327 | Infineon | auf Bestellung 171000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR 402R E6433 | Infineon Technologies | LED Lighting Drivers LED Driver 18V 60mA | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 402U E6327 | Infineon Technologies | LED Driver 500uA Supply Current Automotive AEC-Q101 6-Pin SC-74 | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR 402U E6327 | Infineon Technologies | LED Lighting Drivers AF SMALL INTEGRATION IC LED DRVR 40V | auf Bestellung 151129 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 402U E6433 | Infineon Technologies | LED Lighting Drivers LED DRIVER | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 402W H6327 | Infineon Technologies | LED Lighting Drivers LED Driver 18V 20MA | auf Bestellung 337 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 405U E6327 | Infineon Technologies | LED Lighting Drivers LED 40V 65MA | auf Bestellung 1604 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 410W E6327 | Infineon Technologies | Power Management Specialised - PMIC Active Bias CNTRLR 1.8v 20mA | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 410W H6327 | Infineon Technologies | Active Bias Controller | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 410W H6327 | Infineon Technologies | Power Management Specialised - PMIC Active Bias Controller | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 420U E6327 | Infineon Technologies | LED Lighting Drivers LED DRIVER | auf Bestellung 191412 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 421U E6327 | Infineon Technologies | LED Lighting Drivers LED DRIVER | auf Bestellung 209376 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 430U | Infineon Technologies | Infineon LED DRIVER | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 450 E6327 | Infineon Technologies | LED Lighting Drivers LED DRIVER | auf Bestellung 164266 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 450 E6327 | Infineon Technologies | Світлодіодний драйвер; I = 85 мА; Uвих, В = 6; Uживл, В = 8...27; К-сть вих. = 1; F = 1 МГц; Тип = ШІМ; SC74-6 | auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR 48PN E6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased NPN/PNP Silicn Digtl TRANSISTOR ARRAY | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 48PN E6433 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 70mA/100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 48PN H6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 48PN H6433 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTORS | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 48PN H6727 | Infineon Technologies | Bipolar Transistors - Pre-Biased NPN/PNP Silicon Digi Transistor Array | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 48PN H6727 | Infineon Technologies | Description: TRANS NPN/PNP PREBIAS SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 70mA, 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Frequency - Transition: 100MHz, 200MHz Resistor - Base (R1): 47kOhms, 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: PG-SOT363-PO | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 503 E6327 | Infineon Technologies | Digital Transistors AF TRANS DIGITAL BJT NPN 50V 500MA | auf Bestellung 20152 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 503 E6327 | Infineon Technologies | Транзистор цифровий; Структура = NPN; Uceo, В = 50; Ic, А = 0,5; ft, МГц = 100; hFE = 40 @ 50 мA, 5 В; Ptot, Вт = 0,33; R1, кОм = 2,2; R2, кОм = 2,2; Uceo(sat), В @ Ic, Ib = 0,3 @ 2,5 мA, 50 мA; Тексп, °С = -65...+150; SOT-23-3 | auf Bestellung 3449 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR 505 E6327 | Infineon Technologies | Digital Transistors NPN Silicon Digital TRANSISTOR | auf Bestellung 17013 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 512 B6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Supplier Device Package: PG-SOT23 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 330 mW Frequency - Transition: 100 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 512 B6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased Discrete Semiconductor Products Transistors (BJT) - Single, Pre-Biased | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 512 E6327 | Infineon Technologies | Digital Transistors NPN Silicon Digital TRANSISTOR | auf Bestellung 2128 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 512 E6327 | Infineon | auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR 519 E6327 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 519 E6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 5V Supplier Device Package: PG-SOT23 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 330 mW Frequency - Transition: 100 MHz Resistor - Base (R1): 4.7 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 521 E6327 | Infineon Technologies | Digital Transistors NPN Silicon Digital TRANSISTOR | auf Bestellung 94 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 521 E6327 | Infineon Technologies | Description: BIPOLAR DIGITAL TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 521 E6874 | Infineon Technologies | Bipolar Transistors - Pre-Biased | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 523 E6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR | auf Bestellung 55736 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 523 E6433 | Infineon Technologies | Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 523U E6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR | auf Bestellung 17994 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 533 E6327 | Infineon Technologies | Digital Transistors NPN Silicon Digital TRANSISTOR | auf Bestellung 61797 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 553 E6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 555 E6327 | Infineon Technologies | Description: BIPOLAR DIGITAL TRANSISTOR Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Supplier Device Package: PG-SOT23-3-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 330 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 555 E6327 | Infineon Technologies | Digital Transistors PNP Silicon Digital TRANSISTOR | auf Bestellung 147 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 555 E6433 | Infineon Technologies | Digital Transistors PNP Silicon Digital TRANSISTOR | auf Bestellung 1674 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 562 E6327 | ON Semiconductor | Транзистор цифровий smd; Структура = PNP; Uceo, В = 50; Ic, А = 0,5; ft, МГц = 150; hFE = 60 @ 50 мA, 5 В; Icutoff-max = 100 нА; Ptot, Вт = 0,3; R1, кОм = 4,7; R2, кОм = 4,7; Uceo(sat), В @ Ic, Ib = 0,3 @ 2,5 мA, 50 мA; Тексп, °С = -65...+150; SOT-23-3 | auf Bestellung 2880 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR 562 E6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR | auf Bestellung 36101 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 569 E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 300MW SOT23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR 573 E6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR | auf Bestellung 55843 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
BCR 573 E6327 Produktcode: 147701 | Transistoren > Bipolar-Transistoren PNP | Produkt ist nicht verfügbar | ||||||||||||||||||||
BCR 573 E6433 | Infineon Technologies | Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR | auf Bestellung 7611 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 583 E6327 | Infineon Technologies | Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR | auf Bestellung 24580 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR 583 E6327 Produktcode: 183979 | Transistoren > Bipolar-Transistoren PNP | Produkt ist nicht verfügbar | ||||||||||||||||||||
BCR-122JLC | Coilcraft | Description: FIXED IND 1.2UH 270MA 1.05OHM SM Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: Nonstandard Size / Dimension: 0.120" L x 0.105" W (3.05mm x 2.67mm) Mounting Type: Surface Mount Shielding: Unshielded Type: Wirewound Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 1.05Ohm Max Inductance Frequency - Test: 10 MHz Height - Seated (Max): 0.120" (3.05mm) Inductance: 1.2 µH Current Rating (Amps): 270 mA | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR-8P | BCM | Description: BALL CHAIN, #10 NPS 6", C/C END Packaging: Box Part Status: Active | auf Bestellung 986 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR010A | Essentra Components | Description: ROUND COVED SCREW ON BUMPER & RU | auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR020A | Essentra Components | Description: ROUND COVED SCREW ON BUMPER & RU Packaging: Bag Color: Natural Mounting Type: Screw Mount Material: Nylon Shape: Cylindrical, Recessed Center Type: Bumper | auf Bestellung 4915 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR040A | Essentra Components | Description: ROUND COVED SCREW ON BUMPER & RU | auf Bestellung 2765 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR040B | Essentra Components | Description: ROUND COVED SCREW ON BUMPER & RU | auf Bestellung 2800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR0435000AJWS | Vishay | Thin Film, Back-Contact Resistor | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR0435000AJWS | Vishay | Thin Film Resistors - SMD | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR050A | Essentra | Bumpers / Feet COVED RECESSED BUMPER:NYL NATURAL, 1.000 ROUND TUBE: | auf Bestellung 2974 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR050A | Essentra Components | Description: ROUND COVED SCREW ON BUMPER & RU Packaging: Bag Color: Natural Size / Dimension: 1.000" Dia (25.40mm) Mounting Type: Screw Mount Material: Nylon Shape: Cylindrical, Recessed Center Type: Bumper | auf Bestellung 2998 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR050B | Essentra | Bumpers / Feet COVED RECESSED BUMPER:NYL BLACK, 1.000 ROUND TUBE: | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR050B | Essentra Components | Description: ROUND COVED SCREW ON BUMPER & RU Packaging: Bag Color: Black Size / Dimension: 1.000" Dia (25.40mm) Mounting Type: Screw Mount Material: Nylon Shape: Cylindrical, Recessed Center Type: Bumper Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR050C | Essentra | Bumpers / Feet COVED RECESSED BUMPER:LDPE BLACK, 1.000 ROUND TUBE: | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR050C | Essentra Components | Description: ROUND COVED SCREW ON BUMPER & RU Packaging: Bag Color: Black Size / Dimension: 1.000" Dia (25.40mm) Mounting Type: Screw Mount Material: Polyethylene Shape: Cylindrical, Recessed Center Type: Bumper Part Status: Active | auf Bestellung 2945 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR060A | Essentra Components | Description: ROUND COVED SCREW ON BUMPER & RU Packaging: Bag Color: Natural Size / Dimension: 1.000" Dia (25.40mm) Mounting Type: Screw Mount Material: Nylon Shape: Cylindrical, Recessed Center Type: Bumper Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR060B | Essentra Components | Description: ROUND COVED SCREW ON BUMPER & RU Packaging: Bag Color: Black Size / Dimension: 1.000" Dia (25.40mm) Mounting Type: Screw Mount Material: Nylon Shape: Cylindrical, Recessed Center Type: Bumper Part Status: Active | auf Bestellung 2975 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR060B | Essentra | Mounting Fixings COVED RECESSED BUMPER:NYL BLACK, 1.000 ROUND TUBE: | auf Bestellung 2930 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR060C | Essentra Components | Description: ROUND COVED SCREW ON BUMPER & RU Packaging: Bag Color: Black Size / Dimension: 1.000" Dia (25.40mm) Mounting Type: Screw Mount Material: Polyethylene Shape: Cylindrical, Recessed Center Type: Bumper Part Status: Active | auf Bestellung 2980 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR0741250AFWS | Vishay | Thin Film Resistors - SMD 125 OHM 1% REV AE SMD | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08715000FWS | Vishay | Res Thin Film 0202 Back-Contact 1.5K Ohm 1% Custom 087 tantalum nitride SMD waffle | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08715001FWS | Vishay | Res Thin Film 0202 Back-Contact 15K Ohm 1% Custom 087 tantalum nitride SMD waffle | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08751000FWS | Vishay | Res Thin Film 0202 Back-Contact 5.1K Ohm 1% Custom 087 tantalum nitride SMD waffle | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08AM-12A#B00 | Renesas Electronics America Inc | Description: TRIAC SENS GATE 600V 0.8A TO92 Packaging: Tube Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 2 V Supplier Device Package: TO-92 Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 600 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08AM-12A#B00 | Renesas Electronics | Triacs Power Module - Pb Free | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08AM-12A#BD0 | Renesas Electronics America Inc | Description: TRIAC SENS GATE 600V 0.8A TO92 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 2 V Supplier Device Package: TO-92 Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 600 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08AM-12A-TB#B00 | Renesas Electronics | Triacs Power Module - Pb Free | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08AM-12A-TB#B00 | Renesas Electronics America Inc | Description: TRIAC SENS GATE 600V 0.8A TO92 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 2 V Supplier Device Package: TO-92 Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 600 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08AM-12A-TB#BD0 | Renesas Electronics America Inc | Description: TRIAC SENS GATE 600V 0.8A TO92 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 2 V Supplier Device Package: TO-92 Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 600 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08AM-14A#B00 | Renesas Electronics | Triacs Power Module - Pb Free | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08AM-14A#B00 | Renesas Electronics America Inc | Description: TRIAC SENS GATE 700V 0.8A TO92 Packaging: Tube Package / Case: TO-226-3, TO-92-3 Short Body Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 2 V Supplier Device Package: TO-92 Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 700 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08AM-14A#BD0 | Renesas Electronics America Inc | Description: TRIAC SENS GATE 700V 0.8A TO92 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 2 V Supplier Device Package: TO-92 Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 700 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08AM-14A#C05 | Renesas | Description: T60.8A Packaging: Bulk | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08AM-14A#FD0 | Renesas Electronics | Triacs Triac - 700V/0.8A, TO-92 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08AM-14A#FD0 | Renesas Electronics America Inc | Description: TRIAC SENS GATE 700V 0.8A TO92-3 Packaging: Tube Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 2 V Supplier Device Package: TO-92-3 Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 700 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08AM-14A-A6#B00 | Renesas Electronics America Inc | Description: TRIAC SENS GATE 700V 0.8A TO92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 2 V Supplier Device Package: TO-92 Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 700 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08AM-14A-A6#B00 | Renesas Electronics | Triacs Power Module - Pb Free | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08AM-14A-A6#BD0 | Renesas Electronics America Inc | Description: TRIAC SENS GATE 700V 0.8A TO92 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 2 V Supplier Device Package: TO-92 Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 700 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08AS-12A-T13 | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BCR08AS-12A-T13303 | auf Bestellung 3600 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BCR08AS-12AT14#B11 | Renesas Electronics America Inc | Description: TRIAC SENS GATE 600V 0.8A UPAK Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 2 V Supplier Device Package: UPAK Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 600 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08AS-12AT14#B11 | Renesas Electronics | Triacs Triac | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08AS-8P | MITSUBISHI | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR08DS-14AT13#B10 | Renesas | TRIAC 700V 8A 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08DS-14AT13#B10 | Renesas Electronics America Inc | Description: TRIAC SENS GATE 700V 0.8A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 2 V Supplier Device Package: SOT-223 Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 700 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08DS-14AT13#B10 | Renesas Electronics America Inc | Description: TRIAC SENS GATE 700V 0.8A SOT223 Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 2 V Supplier Device Package: SOT-223 Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 700 V | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR08DS-14AT13#BD0 | Renesas Electronics | Triacs TRIAC - 700V 0.8A SOT-223 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08DS-14AT13#BD0 | Renesas Electronics America Inc | Description: TRIAC SENS GATE 700V 0.8A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Gate Trigger (Igt) (Max): 7 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 2 V Supplier Device Package: SOT-223 Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 700 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08ES-14A#B10 | Renesas Electronics America Inc | Description: TRIAC SENS GATE 700V 0.8A TO92 Packaging: Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08PN | Infineon Technologies | Bipolar Transistors - Pre-Biased | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08PN | Diotec Semiconductor | Description: DIGITAL TR,SOT-363,50V,100MA Packaging: Strip Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-363 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08PN | DIOTEC SEMICONDUCTOR | Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SOT363 Polarisation: bipolar Kind of package: reel; tape Collector current: 0.1A Collector-emitter voltage: 50V Frequency: 170MHz Kind of transistor: BRT; complementary pair Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Power dissipation: 0.25W Type of transistor: NPN / PNP | auf Bestellung 1580 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR08PN | Diotec Semiconductor | Trans Digital BJT NPN/PNP 50V 100mA 250mW 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08PN | DIOTEC SEMICONDUCTOR | Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SOT363 Polarisation: bipolar Kind of package: reel; tape Collector current: 0.1A Collector-emitter voltage: 50V Frequency: 170MHz Kind of transistor: BRT; complementary pair Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Power dissipation: 0.25W Type of transistor: NPN / PNP Anzahl je Verpackung: 10 Stücke | auf Bestellung 1580 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR08PN | Diotec Semiconductor | Bipolar Transistors - Pre-Biased Digital Transistor, SOT-363, 50V, 100mA | auf Bestellung 4515 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR08PN | Diotec Semiconductor AG | Description: Biased BJT, SOT-363, NPN+PNP, 2. Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-363 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08PN | Diotec Semiconductor | Trans Digital BJT NPN/PNP 50V 100mA 250mW 6-Pin SOT-363 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCR08PN-AQ | Diotec Semiconductor AG | Description: Biased BJT, SOT-363, NPN+PNP, 2. Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN - Pre-Biased, 1 PNP Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 2.2kOhms Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08PN-AQ | Diotec Semiconductor | Trans Digital BJT NPN/PNP 50V 100mA 250mW 6-Pin SOT-363 T/RAutomotive | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08PN-AQ | Diotec Semiconductor | Bipolar Transistors - BJT Digital Transistor, SOT-363, 50V, 100mA, AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR08PN-H6327 | Infineon | auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR08PNB6327XT | Infineon Technologies | Description: TRANS NPN/PNP PREBIAS SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: PG-SOT363-PO | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08PNE6327 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08PNE6327 | INFINEON | 07+ | auf Bestellung 18010 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR08PNE6327 | INF | 07+; | auf Bestellung 7562 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR08PNE6327BTSA1 | Infineon Technologies | Description: TRANS NPN/PNP PREBIAS SOT363 Packaging: Cut Tape (CT) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: PG-SOT363-PO | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08PNE6327BTSA1 | Infineon Technologies | Description: TRANS NPN/PNP PREBIAS SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: PG-SOT363-PO | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08PNE6327XT | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08PNE6433HTMA1 | Infineon Technologies | Description: TRANS NPN/PNP PREBIAS SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: PG-SOT363-PO | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08PNH6327 | INFINEON TECHNOLOGIES | Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SOT363 Polarisation: bipolar Collector current: 0.1A Collector-emitter voltage: 50V Frequency: 170MHz Kind of transistor: BRT; complementary pair Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Power dissipation: 0.25W Type of transistor: NPN / PNP Anzahl je Verpackung: 5 Stücke | auf Bestellung 2924 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR08PNH6327 | INFINEON TECHNOLOGIES | Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SOT363 Polarisation: bipolar Collector current: 0.1A Collector-emitter voltage: 50V Frequency: 170MHz Kind of transistor: BRT; complementary pair Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Power dissipation: 0.25W Type of transistor: NPN / PNP | auf Bestellung 2924 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR08PNH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08PNH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 72000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR08PNH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA 250mW Automotive 6-Pin SOT-363 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCR08PNH6327XTSA1 | Infineon Technologies | Description: TRANS NPN/PNP PREBIAS SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: PG-SOT363-PO | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08PNH6327XTSA1 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | auf Bestellung 125717 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR08PNH6327XTSA1 | Infineon | NPN/PNP 50V 170MHz 250mW BCR08PNH6327XTSA1 BCR08PNH6327 Infineon TBCR08pn Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR08PNH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08PNH6433XTMA1 | Infineon Technologies | Description: TRANS NPN/PNP PREBIAS SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: PG-SOT363-PO | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08PNH6433XTMA1 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA Automotive AEC-Q101 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08PNH6433XTMA1 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR08PNH6433XTMA1 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 387 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCR08PNH6433XTMA1 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08PNH6433XTMA1 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 387 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCR08PNH6727XTSA1 | Infineon | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR08PNH6727XTSA1 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA Automotive AEC-Q101 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08PNH6727XTSA1 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08PNH6727XTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN/PNP 50V SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: PG-SOT363-PO | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR08PNH6727XTSA1 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 54000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR1-751JE | auf Bestellung 7144 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BCR1/2-391JE | auf Bestellung 120000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BCR1/2223JTE | auf Bestellung 7200 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BCR1/2680JE | auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BCR1/2820J | auf Bestellung 7000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BCR1/4-271JE | auf Bestellung 3800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BCR10000FKGKWS | Vishay | Thin Film Resistors - SMD BCR 1% +/-100ppm WS | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10000FKGKWS | Vishay | Res Thin Film 0202 100 Ohm 1% 0.25W(1/4W) ±100ppm/°C Pad SMD Waffle | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10000GMAHWS | Vishay | Thin Film Resistors - SMD BCR 2% +/-250ppm WS | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10000GMAHWS | Vishay | Res Thin Film 0202 100 Ohm 2% 0.25W(1/4W) ±250ppm/°C Pad SMD Waffle | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10000KMAHWS | Vishay | Thin Film Resistors - SMD BCR 10% +/-250ppm WS | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10000KMAHWS | Vishay | Res Thin Film 0202 1K Ohm 10% 0.25W(1/4W) ±250ppm/°C Pad SMD Waffle | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10001FKAHWS | Vishay | Res Thin Film 0202 100 Ohm 1% 0.25W(1/4W) ±100ppm/C Pad SMD Waffle | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10001FMAHWS | Vishay Electro-Films | Description: RES SMD 10K OHM 1% 1/4W 0202 Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: Moisture Resistant Packaging: Tray Package / Case: 0202 (0505 Metric) Temperature Coefficient: ±250ppm/°C Size / Dimension: 0.020" L x 0.020" W (0.50mm x 0.50mm) Composition: Thin Film Operating Temperature: -55°C ~ 125°C Number of Terminations: 2 Supplier Device Package: 0202 Height - Seated (Max): 0.012" (0.31mm) Part Status: Active Resistance: 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10001FMAHWS | Vishay | Thin Film Resistors - SMD 10K OHM 1% 250PPM SMD | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10001FMAHWT | Vishay Electro-Films | Description: RES SMD 10K OHM 1% 1/4W 0202 Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: Moisture Resistant Packaging: Tray Package / Case: 0202 (0505 Metric) Temperature Coefficient: ±250ppm/°C Size / Dimension: 0.020" L x 0.020" W (0.50mm x 0.50mm) Composition: Thin Film Operating Temperature: -55°C ~ 125°C Number of Terminations: 2 Supplier Device Package: 0202 Height - Seated (Max): 0.012" (0.31mm) Part Status: Active Resistance: 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10002FKAHWS | Vishay | Res Thin Film 0202 100 Ohm 1% 0.25W(1/4W) ±100ppm/C Pad SMD Waffle | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10002GMAHWS | Vishay | Res Thin Film 0202 100 Ohm 2% 0.25W(1/4W) ±250ppm/°C Pad SMD Waffle | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10002GMAHWS | Vishay | Thin Film Resistors - SMD 100K OHM 2% 250PPM SMD | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10002JMAHWS | Vishay | Thin Film Resistors - SMD 100K OHM 5% 250PPM | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR1000AFKGKWS | Vishay | BCR1000AFKGKWS | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR1000AFKGKWS | Vishay | BCR1000AFKGKWS | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR1000BFMAHWS | Vishay Electro-Films | Description: RES SMD 10 OHM 1% 1/4W 0202 Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: Moisture Resistant Packaging: Tray Package / Case: 0202 (0505 Metric) Temperature Coefficient: ±250ppm/°C Size / Dimension: 0.020" L x 0.020" W (0.50mm x 0.50mm) Composition: Thin Film Operating Temperature: -55°C ~ 125°C Number of Terminations: 2 Supplier Device Package: 0202 Height - Seated (Max): 0.012" (0.31mm) Part Status: Obsolete Resistance: 10 Ohms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR1000BFMAHWT | Vishay Electro-Films | Description: RES SMD 10 OHM 1% 1/4W 0202 Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: Moisture Resistant Packaging: Tray Package / Case: 0202 (0505 Metric) Temperature Coefficient: ±250ppm/°C Size / Dimension: 0.020" L x 0.020" W (0.50mm x 0.50mm) Composition: Thin Film Operating Temperature: -55°C ~ 125°C Number of Terminations: 2 Supplier Device Package: 0202 Height - Seated (Max): 0.012" (0.31mm) Part Status: Active Resistance: 10 Ohms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR103T E6327 | INFINEON | SOT423-WA PB-FRE | auf Bestellung 75000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR103TE6327SOT416-WAPB-FREE | INFINEON | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR103TE6327SOT423-WAPB-FREE | INFINEON | auf Bestellung 75000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR108 | Infineon Technologies | Digital Transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR108 | INFINEON | 09+ | auf Bestellung 6018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR108 | infineon | 04+ SOT-23 | auf Bestellung 2600 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR108E6327 Produktcode: 118884 | Verschiedene Bauteile > Other components 3 | Produkt ist nicht verfügbar | ||||||||||||||||||||
BCR108E6327HTSA1 | INFINEON | Description: INFINEON - BCR108E6327HTSA1 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 50 V, 100 mA, 2.2 kohm, 47 kohm tariffCode: 85332100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 70hFE hazardous: true rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 2.2kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3 Pins Produktpalette: BCR108 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 50V | auf Bestellung 53095 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCR108E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 200mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 102000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR108E6327HTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 75387 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR108E6327HTSA1 | Infineon Technologies | Digital Transistors AF TRANS DIGITAL BJT NPN 50V 100MA | auf Bestellung 37176 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR108E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 200mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR108E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 200mW Automotive 3-Pin SOT-23 T/R | auf Bestellung 153000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCR108E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 200mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 156000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR108E6327HTSA1 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ Mounting: SMD Case: SOT23 Collector-emitter voltage: 50V Base resistor: 2.2kΩ Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN Base-emitter resistor: 47kΩ Frequency: 170MHz Collector current: 0.1A | auf Bestellung 815 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR108E6327HTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 75000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR108E6327HTSA1 | INFINEON | Description: INFINEON - BCR108E6327HTSA1 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 50 V, 100 mA, 2.2 kohm, 47 kohm tariffCode: 85332100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 70hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 2.2kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3 Pins Produktpalette: BCR108 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 50V | auf Bestellung 53095 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCR108E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 200mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 153000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR108E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 200mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR108E6327XT | Infineon Technologies | Bipolar Transistors - Pre-Biased AF TRANS DIGITAL BJT NPN 50V 100MA | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR108E6433HTMA1 | Infineon Technologies | Digital Transistors NPN Silicon Digital TRANSISTOR | auf Bestellung 34392 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR108E6433HTMA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR108E6433HTMA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR108E6433HTMA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR108F/DTC123JM | INFINEON | 09+ | auf Bestellung 42018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR108S | Infineon | 2NPN 0.1A 50V 0.25W BCR108S TBCR108s Anzahl je Verpackung: 100 Stücke | auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR108S | Infineon Technologies | Bipolar Transistors - Pre-Biased | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR108S E6327 | INFINEON | SOT363-WH PB-FRE | auf Bestellung 1022 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR108SE6327 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR108SE6327 | INF | 07+; | auf Bestellung 84000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR108SE6327BTSA1 | Infineon Technologies | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: PG-SOT363-PO Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR108SE6327XT | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR108SE6433HTMA1 | Infineon Technologies | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: PG-SOT363-PO Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR108SH6327 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT363 Mounting: SMD Frequency: 170MHz Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ | auf Bestellung 1636 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR108SH6327 | Infineon Technologies | Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: PG-SOT363-6-1 Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR108SH6327 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT363 Mounting: SMD Frequency: 170MHz Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Anzahl je Verpackung: 1 Stücke | auf Bestellung 1636 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR108SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCR108SH6327XTSA1 | Infineon Technologies | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: PG-SOT363-PO Part Status: Last Time Buy | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR108SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR108SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR108SH6327XTSA1 | Infineon Technologies | Digital Transistors AF DIGITAL TRANSISTORS | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR108SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR108SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive 6-Pin SOT-363 T/R | auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCR108SH6433XTMA1 | Infineon Technologies | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: PG-SOT363-PO Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR108T | INF | SOT323 07+ | auf Bestellung 42000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR108W E6327 | Infineon | NPN 100mA 50V 250mW 170MHz w/ res. 2.2k+47k BCR108W TBCR108w Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR108WE6327 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR108WE6327 | Infineon Technologies | Description: BIPOLAR DIGITAL TRANSISTOR Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR108WE6327BTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT323 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR108WE6327XT | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR108WH6327 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 2.2kΩ Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.25W Frequency: 170MHz Case: SOT323 Kind of transistor: BRT Mounting: SMD Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Anzahl je Verpackung: 5 Stücke | auf Bestellung 6440 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR108WH6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT323-3 Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR108WH6327 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 2.2kΩ Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.25W Frequency: 170MHz Case: SOT323 Kind of transistor: BRT Mounting: SMD Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ | auf Bestellung 6440 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR108WH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive AEC-Q101 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR108WH6327XTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT323 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR108WH6327XTSA1 | Infineon Technologies | Digital Transistors AF DIGITAL TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR108WH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive AEC-Q101 3-Pin SOT-323 T/R | auf Bestellung 180000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR108WH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive AEC-Q101 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR108WH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR108WH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive AEC-Q101 3-Pin SOT-323 T/R | auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR108WH6327XTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT323 Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT323 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 88407 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR108WH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive AEC-Q101 3-Pin SOT-323 T/R | auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR108WH6433 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT323-3 Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR108WH6433XTMA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR108WH6433XTMA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT323 Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT323 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 200000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR108WH6433XTMA1 | Infineon Technologies | Digital Transistors AF DIGITAL TRANSISTORS | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR108WH6433XTMA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive AEC-Q101 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR108WH6433XTMA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT323 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10AM | N/A | 09+ | auf Bestellung 68 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR10CM-12LA#B00 | Rochester Electronics, LLC | Description: TRIAC, 600V , 10A | auf Bestellung 11499 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR10CM-12LA-1#B00 | Renesas Electronics America Inc | Description: TRIAC, 600V , 10A | auf Bestellung 1956 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR10CM-12LA-1A5X2 | Renesas Electronics America Inc | Description: TRIAC, 600V , 10A | auf Bestellung 1163 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR10CM-12LA-1AAX2 | Rochester Electronics, LLC | Description: TRIAC, 600V , 10A | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10CM-12LA-A8#X2 | Rochester Electronics, LLC | Description: TRIAC, 600V , 10A | auf Bestellung 59 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR10CM-12LB#B01 | Rochester Electronics, LLC | Description: TRIAC, 600V , 10A | auf Bestellung 27411 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR10CM-12LB#BB0 | Renesas Electronics | Triacs TRIAC | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10CM-12LB#BB0 | Renesas Electronics America | Description: TRIAC 600V 10A TO220-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10CM-12LB#BH0 | Renesas Electronics America | Description: TRIAC 600V 10A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10CM-12LBA8#BB0 | Renesas Electronics America Inc | Description: BCR10CM-12 - 10A, 600V TRIAC | auf Bestellung 3193 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR10CM-16LH#BB0 | Renesas Electronics America | Description: TRIAC 800V 10A TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10CM-16LH#BB0 | Renesas Electronics | Triacs TRIAC | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10CM-16LH#BH0 | Renesas Electronics America | Description: TRIAC 800V 10A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10CM-16LH#BH0 | Renesas Electronics | Triacs TRIAC - 800V/10A, TO-220ABA | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10CM-16LH-1#B00 | Renesas Electronics America | Description: TRIAC 800V 10A TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10CM8L | MITSUBISHI | 07+; | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR10CS-12LA#B00 | Rochester Electronics, LLC | Description: NON-INSULATED TYPE TRIAC | auf Bestellung 1326 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR10CS-12LA-T11X3 | Renesas Electronics America Inc | Description: NON-INSULATED TYPE TRIAC Packaging: Bulk | auf Bestellung 11000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR10CS-12LBT1#BH0 | Renesas Electronics America | Description: TRIAC 600V 10A TO263 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10CS-8LA | MUI | auf Bestellung 21003 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR10CS12LBT11#B00 | Renesas Electronics America | Description: TRIAC 600V 10A TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10FM-12LB#BB0 | Renesas Electronics America | Description: TRIAC 600V 10A TO220FP | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10FM-12LB#BG0 | Renesas Electronics America | Description: TRIAC 600V 10A TO-220FPA | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10FM-12LB#BH0 | Renesas Electronics America | Description: TRIAC TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10FM-12LB#FA0 | Renesas Electronics America | Description: TRIAC 600V 10A TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10FM-14LJ#BB0 | Renesas Electronics | Triacs TRIAC | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10FM-14LJ#BB0 | Renesas Electronics America | Description: TRIAC 800V 10A TO220FP | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10FM-14LJ#BH0 | Renesas Electronics America | Description: TRIAC TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10KM | MITSUBIS | TO220/ | auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR10KM-12LA#C03 | Renesas Electronics Corporation | Description: TRIAC 600V 10A Packaging: Bulk | auf Bestellung 4311 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR10KM-12LA-1#B00 | Renesas | Description: TRIAC 600V 10A TO220FN Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Gate Trigger (Igt) (Max): 30 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220FN Current - On State (It (RMS)) (Max): 10 A Voltage - Off State: 600 V | auf Bestellung 936 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR10KM-12LA-1A8X2 | Renesas Electronics Corporation | Description: TRIAC 600V 10A Packaging: Bulk Part Status: Active | auf Bestellung 10439 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR10KM-12LA-A6#X2 | Renesas Electronics Corporation | Description: TRIAC 600V 10A Packaging: Bulk | auf Bestellung 749 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR10KM-12LA-AS#X2 | Rochester Electronics, LLC | Description: TRIAC, 600V, 10A | auf Bestellung 199 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR10KM-12LB#B00 | Renesas Electronics Corporation | Description: TRIAC 600V 10A Packaging: Bulk | auf Bestellung 2692 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR10KM-12LC-A8#X5 | Renesas Electronics Corporation | Description: TRIAC 600V 10A Packaging: Bulk | auf Bestellung 145264 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR10LM-12LB#B00 | Renesas Electronics America | Description: TRIAC 600V 10A TO220FL | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10LM-12LD#B00 | Renesas Electronics America | Description: TRIAC 600V 10A TO220FL | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10LM-14LJ#B00 | Renesas Electronics America | Description: TRIAC 800V 10A TO220FL | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10LM-16LH#B00 | Renesas Electronics America | Description: TRIAC 800V 10A TO-220FL | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10LM-16LH-1#B00 | Renesas Electronics America Inc | Description: TRIAC 800V 10A TO-220FL | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10LM-16LH-1#B00 | Renesas Electronics | Triacs Power Module - Pb Free | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10PM | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BCR10PM-12LA#B00 | Renesas Electronics | Triacs | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10PM-12LB#B01 | Renesas Electronics | Triacs | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10PM-12LD#B00 | Renesas Electronics America | Description: TRIAC 600V 10A TO-220F | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10PM-12LD#B00 | Renesas Electronics | Triacs | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10PM-12LG#B00 | Renesas Electronics | Triacs | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10PM-12LG#B00 | Renesas Electronics America | Description: TRIAC 600V 10A TO-220F | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10PM-14LJ#B00 | Renesas Electronics America | Description: TRIAC 800V 10A TO-220F | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10PM-14LJ#B00 | Renesas Electronics | Triacs | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10PN | Infineon Technologies | Bipolar Transistors - Pre-Biased | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10PNB6327XT | Infineon Technologies | Description: TRANS NPN/PNP PREBIAS SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 130MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: PG-SOT363-PO | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10PNE6327BTSA1 | Infineon Technologies | Description: TRANS NPN/PNP PREBIAS SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 130MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: PG-SOT363-PO | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10PNE6327XT | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10PNH6327 | INFINEON TECHNOLOGIES | Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT363 Mounting: SMD Frequency: 130MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10PNH6327 | Infineon | NPN/PNP 100mA 50V 130MHz 250mW BCR10PN Infineon Tech TBCR10pn Anzahl je Verpackung: 100 Stücke | auf Bestellung 2900 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR10PNH6327 Produktcode: 164698 | Transistoren > Bipolar-Transistoren NPN | Produkt ist nicht verfügbar | ||||||||||||||||||||
BCR10PNH6327 | INFINEON TECHNOLOGIES | Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT363 Mounting: SMD Frequency: 130MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10PNH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10PNH6327XTSA1 | INFINEON | Description: INFINEON - BCR10PNH6327XTSA1 - Bipolarer Transistor, pre-biased/digital, NPN- und PNP-Ergänzung, 50 V, 50 V, 100 mA, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 30hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: SOT-363 Anzahl der Pins: 6 Pins Produktpalette: BCR10PN Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN- und PNP-Ergänzung Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 50V SVHC: No SVHC (17-Jan-2023) | auf Bestellung 34615 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCR10PNH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR10PNH6327XTSA1 | Infineon Technologies | Description: TRANS NPN/PNP PREBIAS SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 130MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: PG-SOT363-PO Part Status: Last Time Buy | auf Bestellung 36000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR10PNH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA 250mW Automotive 6-Pin SOT-363 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCR10PNH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR10PNH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR10PNH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR10PNH6327XTSA1 | INFINEON | Description: INFINEON - BCR10PNH6327XTSA1 - Bipolarer Transistor, pre-biased/digital, NPN- und PNP-Ergänzung, 50 V, 50 V, 100 mA, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 30hFE hazardous: true rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: SOT-363 Anzahl der Pins: 6 Pins Produktpalette: BCR10PN Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN- und PNP-Ergänzung Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 50V SVHC: No SVHC (17-Jan-2023) | auf Bestellung 34615 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCR10PNH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR10PNH6327XTSA1 | Infineon Technologies | Description: TRANS NPN/PNP PREBIAS SOT363 Packaging: Cut Tape (CT) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 130MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: PG-SOT363-PO Part Status: Last Time Buy | auf Bestellung 37016 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR10PNH6327XTSA1 | Infineon Technologies | Digital Transistors AF DIGITAL TRANSISTOR | auf Bestellung 18691 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR10PNH6727XTSA1 | Infineon Technologies | Description: TRANS NPN/PNP PREBIAS SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 130MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: PG-SOT363-PO | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10PNH6727XTSA1 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10PNH6727XTSA1 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 54000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR10PNH6727XTSA1 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10PNH6727XTSA1 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA Automotive AEC-Q101 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10PNH6730 | Infineon Technologies | Description: BIPOLAR DIGITAL TRANSISTOR Packaging: Bulk Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 130MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: PG-SOT363-6-1 Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10PNH6730XTMA1 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA Automotive AEC-Q101 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10PNH6730XTMA1 | Infineon Technologies | Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR10PNH6730XTMA1 | Infineon Technologies | Description: TRANS NPN/PNP PREBIAS SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 130MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: PG-SOT363-PO | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR1100AFKAHWS | Vishay | Res Thin Film 0202 110 Ohm 1% 0.25W(1/4W) ±100ppm/C Pad SMD Waffle | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR1100AFKAHWS | Vishay | Thin Film Resistors - SMD BCR 1% +/-100ppm WS | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR112 | infineon | 04+ SOT-23 | auf Bestellung 3100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR112 | Infineon Technologies | Digital Transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR112 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 140MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR112 (Bipolartransistor NPN) Produktcode: 38373 | Transistoren > Bipolar-Transistoren NPN | Produkt ist nicht verfügbar | ||||||||||||||||||||
BCR112-E6327 | Infineon | auf Bestellung 39000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR112E6327 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 140MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR112E6327 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 200mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR112E6327 Produktcode: 112172 | Transistoren > Bipolar-Transistoren NPN | Produkt ist nicht verfügbar | ||||||||||||||||||||
BCR112E6327HTSA1 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 140MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ | auf Bestellung 425 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR112E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 200mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR112E6327HTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 140 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms | auf Bestellung 759000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR112E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 200mW Automotive 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCR112E6327HTSA1 | Infineon Technologies | Digital Transistors NPN Silicon Digital TRANSISTOR | auf Bestellung 29949 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR112E6327HTSA1 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 140MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Anzahl je Verpackung: 1 Stücke | auf Bestellung 425 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR112E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 200mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR112E6327HTSA1 | INFINEON | Description: INFINEON - BCR112E6327HTSA1 - Bipolarer Einzeltransistor (BJT), NPN, 50 V, 100 mA, 200 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 20hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 50V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 140MHz Betriebstemperatur, max.: 150°C | auf Bestellung 61250 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCR112E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 200mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR112E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 200mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR112E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 200mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR112E6327HTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 140 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms | auf Bestellung 759314 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR112E6327HTSA1 | Infineon | NPN 100mA 50V 200mW 140MHz w/ res. 4.7k+4.7k BCR112E6327, BCR112E6327HTSA1, SP000010747 BCR112 TBCR112 Anzahl je Verpackung: 250 Stücke | auf Bestellung 11750 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR112E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 200mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR112E6327HTSA1 | INFINEON | Description: INFINEON - BCR112E6327HTSA1 - Bipolarer Einzeltransistor (BJT), NPN, 50 V, 100 mA, 200 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 20hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 50V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 140MHz Betriebstemperatur, max.: 150°C | auf Bestellung 61250 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCR112F | INFINEON | SOT23 | auf Bestellung 1897 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR112F | Infineon Technologies | Bipolar Transistors - Pre-Biased | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR112F/DTC143EM | INFINEON | 09+ | auf Bestellung 84018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR112R6327 | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BCR112T | 10+ SOT-523 | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR112T/DTC143EE | INFINEON | 09+ | auf Bestellung 33018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR112WE6327 | INFINEON | 00+ | auf Bestellung 1980 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR112WE6327BTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V Supplier Device Package: PG-SOT323 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 140 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR112WE6327XT | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR112WF | Infineon | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR112WH6327 | Infineon Technologies | Description: BIPOLAR DIGITAL TRANSISTOR Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 140 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR112WH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive AEC-Q101 3-Pin SOT-323 T/R | auf Bestellung 180000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR112WH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR112WH6327XTSA1 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTORS | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR112WH6327XTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V Supplier Device Package: PG-SOT323 Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 140 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR112ЎЎE6327 | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BCR114/DTC143XK | INFINEON | 09+ | auf Bestellung 147018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR114F | INFINEON | SOD323 | auf Bestellung 4690 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR116 | Infineon Technologies | Bipolar Transistors - Pre-Biased | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR116 | SM | auf Bestellung 539 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR116 Produktcode: 94439 | Transistoren > Bipolar-Transistoren NPN | Produkt ist nicht verfügbar | ||||||||||||||||||||
BCR116 | INF | 10+ SOT-23 | auf Bestellung 132000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR116 | INFINEON | 05+ DIP16 | auf Bestellung 40 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR116 | INFIN | 09+ | auf Bestellung 150018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR116/WG | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BCR116E6327 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR116E6327 Produktcode: 198302 | Verschiedene Bauteile > Verschiedene Bauteile 1 | Produkt ist nicht verfügbar | ||||||||||||||||||||
BCR116E6327HTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 57000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR116E6327HTSA1 | INFINEON | Description: INFINEON - BCR116E6327HTSA1 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 70hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 4.7kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-23 Produktpalette: BCR116 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (17-Jan-2023) | auf Bestellung 37135 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCR116E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 200mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR116E6327HTSA1 | Infineon Technologies | Digital Transistors NPN Silicon Digital TRANSISTOR | auf Bestellung 85785 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR116E6327HTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 59835 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR116E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 200mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR116E6393 | Infineon Technologies | Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT23-3-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR116E6393HTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT23 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR116E6433 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR116E6433HTMA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 600000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR116E6433HTMA1 | Infineon Technologies | Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR116E6433HTMA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR116E6433HTMA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR116E6433HTMA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR116E6433HTMA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR116E6433HTMA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-23 T/R | auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCR116L3 | Infineon Technologies | Bipolar Transistors - Pre-Biased | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR116L3 E6327 | INFINEON | BGA-WG PB-FREE | auf Bestellung 180000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR116L3E6327BGA-WGPB-FREE | INFINEON | auf Bestellung 180000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR116S | Infineon Technologies | Bipolar Transistors - Pre-Biased | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR116S | INFINEON | 05+NOP | auf Bestellung 1443 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR116S H6327 | Infineon Technologies | BCR116SH6327XTSA1 SOT-363 | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCR116SE6327 | Infineon Technologies | Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: PG-SOT363-6-1 Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR116SE6327 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR116SE6327 | INFINEON | 07+ | auf Bestellung 15010 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR116SE6327BTSA1 | Infineon Technologies | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: PG-SOT363-PO Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR116SE6327XT | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR116SE6727 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR116SE6727XT | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR116SH6327 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 4.7kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT363 Mounting: SMD Frequency: 150MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Anzahl je Verpackung: 1 Stücke | auf Bestellung 2590 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR116SH6327 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 4.7kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT363 Mounting: SMD Frequency: 150MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ | auf Bestellung 2590 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR116SH6327 WGs | Infineon | 2NPN 50V 100mA 150MHz 250mW BCR116SH6327XTSA1 BCR116SH6327 Infineon TBCR116s Anzahl je Verpackung: 500 Stücke | auf Bestellung 480 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR116SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR116SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR116SH6327XTSA1 | Infineon Technologies | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: PG-SOT363-PO | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR116SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR116SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR116SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive 6-Pin SOT-363 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCR116SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR116SH6327XTSA1 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR116T | INF | 10+ SOT-523 | auf Bestellung 102000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR116W | INF | 10+ SOT-323 | auf Bestellung 102000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR116WE6327 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR116WE6327BTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT323 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR116WE6327XT | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR116WH6327 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Mounting: SMD Frequency: 150MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ | auf Bestellung 7600 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR116WH6327 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Mounting: SMD Frequency: 150MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Anzahl je Verpackung: 5 Stücke | auf Bestellung 7600 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR116WH6327XTSA1 | Infineon | auf Bestellung 48000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR116WH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive AEC-Q101 3-Pin SOT-323 T/R | auf Bestellung 576000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR116WH6327XTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT323 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR116WH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR116WH6327XTSA1 | Infineon Technologies | Digital Transistors AF DIGITAL TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR116WH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive AEC-Q101 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR119 | Infineon Technologies | Bipolar Transistors - Pre-Biased | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR119 E6433 | INFINEON | SOT23-WK PB-FREE | auf Bestellung 180000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR119-E6327 | Infineon | auf Bestellung 39000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR119E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR119E6327HTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 4.7 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR119E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR119E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR119E6327HTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 4.7 kOhms | auf Bestellung 348000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR119F/DTC143TM | INFINEON | 09+ | auf Bestellung 90018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR119S | Infineon Technologies | Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: PG-SOT363-6-1 Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR119SE6327BTSA1 | Infineon Technologies | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: PG-SOT363-PO | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR119SE6327XT | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR119SE6433 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR119SE6433HTMA1 | Infineon Technologies | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: PG-SOT363-PO | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR119SH6327 | Infineon Technologies | Description: BIPOLAR DIGITAL TRANSISTOR Packaging: Bulk Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: PG-SOT363-6-1 Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR119SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR119SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR119SH6327XTSA1 | Infineon Technologies | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Bulk Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: PG-SOT363-PO Part Status: Last Time Buy | auf Bestellung 14800 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR119SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR119SH6327XTSA1 | Infineon Technologies | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: PG-SOT363-PO Part Status: Last Time Buy | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR119SH6327XTSA1 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR119SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR119SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive 6-Pin SOT-363 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCR119SH6433XTMA1 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR119SH6433XTMA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR119SH6433XTMA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive AEC-Q101 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR119SH6433XTMA1 | Infineon Technologies | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: PG-SOT363-PO | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR119W | INFINEON | 09+ | auf Bestellung 10018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR119W E6327 | INFINEON | SOT323-WK PB-FRE | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR119WE6327 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR119WE6327 | Infineon Technologies | Description: TRANS PREBIAS Packaging: Bulk | auf Bestellung 147000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR119WE6327HTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-SOT323 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 4.7 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR119WE6327XT | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR119WH6327 | Infineon Technologies | Description: BIPOLAR DIGITAL TRANSISTOR Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 4.7 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR119WH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive AEC-Q101 3-Pin SOT-323 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR119WH6327XTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-SOT323 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 4.7 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR119WH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR119WH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive AEC-Q101 3-Pin SOT-323 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR12000FKAHWS | Vishay | Res Thin Film 0202 120 Ohm 1% 0.25W(1/4W) ±100ppm/C Pad SMD Waffle | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12000JRGHWS | Vishay | Res Thin Film 0202 120 Ohm 5% 0.25W(1/4W) -250ppm/°C to 0ppm/°C Pad SMD Waffle | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR1200AGMGHWS | Vishay | Thin Film Resistors - SMD 120 OHM 2% 250PPM SMD | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR129 | Infineon Technologies | Bipolar Transistors - Pre-Biased | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR129E6327 | Infineon Technologies | Description: BCR129 - DIGITAL TRANSISTOR Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-SOT23-3-11 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR129E6327 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 150MHz Base resistor: 10kΩ Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR129E6327 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 150MHz Base resistor: 10kΩ | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR129E6327HTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms | auf Bestellung 214700 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR129E6327HTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR129E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 200mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR129E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 200mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 195000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR129E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 200mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR129F | Infineon Technologies | Bipolar Transistors - Pre-Biased | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR129F/DTC114TM | INFINEON | 09+ | auf Bestellung 180018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR129FE6327 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-SOT23-3-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR129L3 | Infineon Technologies | Bipolar Transistors - Pre-Biased | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR129S | Infineon Technologies | Bipolar Transistors - Pre-Biased | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR129S E6327 | INFINEON | SOT363-WV | auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR129SE6327 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR129SE6327 | Infineon Technologies | Description: BIPOLAR DIGITAL TRANSISTOR Packaging: Bulk Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 10kOhms Supplier Device Package: PG-SOT363-PO Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR129SE6327HTSA1 | Infineon Technologies | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 10kOhms Supplier Device Package: PG-SOT363-PO Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR129SE6327HTSA1 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTORS | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR129SE6327XT | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR129SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive AEC-Q101 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR129SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR129SH6327XTSA1 | Infineon Technologies | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 10kOhms Supplier Device Package: PG-SOT363-PO Part Status: Last Time Buy | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR129SH6327XTSA1 | Infineon | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR129SH6327XTSA1 | Infineon Technologies | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Bulk Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 10kOhms Supplier Device Package: PG-SOT363-PO | auf Bestellung 36000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR129T | Infineon Technologies | Bipolar Transistors - Pre-Biased | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR129T E6327 | INFINEON | SOT423-WV PB-FRE | auf Bestellung 348000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR129T/DTC114TE | INFINEON | 09+ | auf Bestellung 120018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR129TE6327SOT423-WVPB-FREE | INFINEON | auf Bestellung 348000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR129W | INFINEON | 09+ | auf Bestellung 2618 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR129W | Infineon Technologies | Bipolar Transistors - Pre-Biased | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR129W E6327 | INFINEON | SOT323-WV PB-FRE | auf Bestellung 57000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR129WE6327HTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-SOT323 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR129WE6327HTSA1 | Infineon Technologies | Bipolar Transistors - Pre-Biased | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR129WE6327SOT323-WVPB-FREE | INFINEON | auf Bestellung 57000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR129WH6327 | Infineon Technologies | Description: BIPOLAR DIGITAL TRANSISTOR Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR129WH6327 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Mounting: SMD Frequency: 150MHz Base resistor: 10kΩ | auf Bestellung 812 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR129WH6327 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Mounting: SMD Frequency: 150MHz Base resistor: 10kΩ Anzahl je Verpackung: 1 Stücke | auf Bestellung 812 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR129WH6327XTSA1 | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTORS | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR129WH6327XTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-SOT323 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR129WH6327XTSA1 | Infineon | auf Bestellung 27000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR129WH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive AEC-Q101 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR129WH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR129WH6327XTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT323 Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-SOT323 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms | auf Bestellung 432000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR12AM-12 | MIT | 2002 TO-220 | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR12CM-12LA-1#B00 | Renesas Electronics Corporation | Description: TRIAC 600V 12A Packaging: Bulk Part Status: Active | auf Bestellung 614 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR12CM-12LA-AM#X2 | Renesas Electronics Corporation | Description: TRIAC 600V 12A Packaging: Bulk Part Status: Active | auf Bestellung 2775 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR12CM-12LA-AN#X2 | Renesas Electronics Corporation | Description: TRIAC 600V 12A Packaging: Bulk Part Status: Active | auf Bestellung 3027 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR12CM-12LB#B01 | Renesas Electronics America Inc | Description: TRIAC, 600V, 12A Packaging: Tube Triac Type: Standard Configuration: Single Current - Gate Trigger (Igt) (Max): 30 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12CM-12LB#BB0 | Renesas Electronics Corporation | Description: TRIAC 600V 12A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Gate Trigger (Igt) (Max): 30 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220AB Part Status: Obsolete Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12CM-12LB#BB0 | Renesas Electronics | Triacs TRIAC | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12CM-12LB#BH0 | Renesas Electronics Corporation | Description: TRIAC 600V 12A TO220ABA Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Gate Trigger (Igt) (Max): 30 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220ABA Part Status: Active Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12CM-12LBA8#BB0 | Renesas | Description: BCR12 - 600V - 10A - Triac Mediu Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Gate Trigger (Igt) (Max): 30 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220ABS Part Status: Obsolete Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12CM-14LK#B00 | Renesas Electronics America | Description: TRIAC 700V 12A | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12CM-16LB#BB0 | Renesas Electronics Corporation | Description: TRIAC 800V 12A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Gate Trigger (Igt) (Max): 30 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220AB Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 800 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12CM-16LB#BB0 | Renesas Electronics | Triacs TRIAC | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12CM-16LB#BH0 | Renesas Electronics Corporation | Description: TRIAC 800V 12A TO220ABA Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Gate Trigger (Igt) (Max): 30 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220ABA Part Status: Active Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 800 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12CM-16LH#BB0 | Renesas Electronics | Triacs TRIAC | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12CM-16LH#BB0 | Renesas Electronics Corporation | Description: TRIAC 800V 12A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220-3 Part Status: Obsolete Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 800 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12CM-16LH#BH0 | Renesas Electronics Corporation | Description: TRIAC 800V 12A TO220ABA Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220ABA Part Status: Active Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 800 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12CM-16LH-1#B00 | Renesas Electronics America | Description: TRIAC 800V 12A | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12CS-12LB#B00 | Renesas Electronics Corporation | Description: TRIAC 600V 12A LDPAK Packaging: Tube Package / Case: SC-83 Mounting Type: Surface Mount Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Gate Trigger (Igt) (Max): 30 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: LDPAK Part Status: Active Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12CS-12LBT1#BH0 | Renesas Electronics Corporation | Description: TRIAC 600V 12A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Gate Trigger (Igt) (Max): 30 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-263 Part Status: Active Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12FM-12LB#BB0 | Renesas Electronics Corporation | Description: TRIAC 600V 12A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Gate Trigger (Igt) (Max): 30 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 50Hz Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220FP Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12FM-12LB#BG0 | Renesas Electronics | Triacs Power Module - Lead Free | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12FM-12LB#BG0 | Renesas Electronics Corporation | Description: TRIAC 600V 12A TO220FPA Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Gate Trigger (Igt) (Max): 30 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 50Hz Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220FPA Part Status: Active Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12FM-12LB#BH0 | Renesas Electronics Corporation | Description: TRIAC 600V 12A TO220FPA Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Gate Trigger (Igt) (Max): 30 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 50Hz Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220FPA Part Status: Active Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12FM-12LB#FA0 | Renesas Electronics Corporation | Description: TRIAC 600V 12A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Gate Trigger (Igt) (Max): 30 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 50Hz Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220FP Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12FM-14LB#BG0 | Renesas Electronics Corporation | Description: TRIAC 800V 12A TO220FPA Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Gate Trigger (Igt) (Max): 30 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 50Hz Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220FPA Part Status: Active Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 800 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12FM-14LB#FA0 | Renesas Electronics Corporation | Description: TRIAC 700V 12A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Gate Trigger (Igt) (Max): 30 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 50Hz Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220FP Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 700 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12FM-14LBAS#GA1 | Renesas Electronics Corporation | Description: TRIAC 700V 12A Packaging: Bulk Part Status: Active DigiKey Programmable: Not Verified | auf Bestellung 8013 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR12FM-14LJ#BB0 | Renesas Electronics | Triacs Power Module - Pb Free | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12FM-14LJ#BB0 | Renesas Electronics Corporation | Description: TRIAC 800V 12A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Gate Trigger (Igt) (Max): 30 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220FP Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 800 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12FM-14LJ#BH0 | Renesas Electronics Corporation | Description: TRIAC 800V 12A TO220FPA Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Gate Trigger (Igt) (Max): 30 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220FPA Part Status: Active Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 800 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12KM-12LA-1A6X2 | Renesas Electronics Corporation | Description: TRIAC 600V 12A Packaging: Bulk Part Status: Active | auf Bestellung 901 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR12KM-12LA-1A8X2 | Renesas Electronics Corporation | Description: TRIAC 600V 12A Packaging: Bulk Part Status: Active | auf Bestellung 39063 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR12KM-12LA-1AR#B | Renesas Electronics America Inc | Description: TRIAC, 600V, 12A Packaging: Bulk Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12KM-12LA-A5#X2 | Renesas Electronics Corporation | Description: TRIAC 600V 12A Packaging: Bulk Part Status: Active | auf Bestellung 810 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR12KM-12LA-A8#X2 | Renesas Electronics Corporation | Description: TRIAC 600V 12A Packaging: Bulk Part Status: Active | auf Bestellung 803 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR12KM-12LA-AS#X2 | Renesas Electronics Corporation | Description: TRIAC 600V 12A Packaging: Bulk Part Status: Active | auf Bestellung 1170 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR12KM-12LB#B00 | Renesas Electronics Corporation | Description: TRIAC 600V 12A Packaging: Bulk Part Status: Active | auf Bestellung 2005 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR12KM-12LB-1#B00 | Renesas Electronics Corporation | Description: TRIAC 600V 12A Packaging: Bulk Part Status: Active | auf Bestellung 572 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR12KM-12LBA8#B00 | Renesas Electronics Corporation | Description: TRIAC 600V 12A Packaging: Bulk Part Status: Active | auf Bestellung 7525 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR12KM-14LA#B00 | Renesas Electronics Corporation | Description: TRIAC 700V 12A Packaging: Bulk Part Status: Active | auf Bestellung 341 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR12KM-14LA#C05 | Renesas Electronics Corporation | Description: TRIAC 700V 12A Packaging: Bulk Part Status: Active | auf Bestellung 28556 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR12KM-14LA-A8#X2 | Renesas Electronics Corporation | Description: TRIAC 700V 12A Packaging: Bulk Part Status: Active | auf Bestellung 1232 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR12LM-12LB#B00 | Renesas Electronics | Triacs | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12LM-12LB#B00 | Renesas Electronics America | Description: TRIAC 600V 12A TO220FL | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12LM-12LB-1#B00 | Renesas Electronics | Triacs | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12LM-12LBA8#B00 | Renesas Electronics | Triacs | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12LM-12LD#B00 | Renesas Electronics America | Description: TRIAC 600V 12A TO220FL | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12LM-12LD#B00 | Renesas Electronics | Triacs | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12LM-14LB#B00 | Renesas Electronics America | Description: TRIAC 800V 12A TO220FL | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12LM-14LB#B00 | Renesas Electronics | Triacs | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12LM-14LBA8#B00 | Renesas Electronics | Triacs | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12LM-14LBAS#B00 | Renesas Electronics | Triacs | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12LM-14LD#B00 | Renesas Electronics | Triacs | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12LM-14LD#B00 | Renesas Electronics America | Description: TRIAC 800V 12A TO220FL | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12LM-14LJ#B00 | Renesas Electronics America | Description: TRIAC 800V 12A | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12LM-14LJ#B00 | Renesas Electronics | Triacs | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12LM-14LK#B00 | Renesas Electronics | Triacs | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12LM-14LK#B00 | Renesas Electronics America | Description: TRIAC 700V 12A | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12LM-16LB#B00 | Renesas Electronics America | Description: TRIAC 800V 12A | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12LM-16LB#B00 | Renesas Electronics | Triacs | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12LM-16LH#B00 | Renesas Electronics America | Description: TRIAC 800V 12A | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12LM-16LH#B00 | Renesas Electronics | Triacs | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12LM-16LH-1#B00 | Renesas Electronics Corporation | Description: TRIAC 800V 12A TO220FL Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220FL Part Status: Active Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 800 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12LM-16LH-1#B00 | Renesas Electronics | Triacs Power Module - Pb Free | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12PM-12LA#B00 | Renesas Electronics Corporation | Description: TRIAC 600V 12A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Gate Trigger (Igt) (Max): 30 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220F Part Status: Obsolete Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12PM-12LA#B00 Produktcode: 109503 | RENESAS | Thyristoren, Dynistors, Triacs > Thyristoren, Dynistors | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12PM-12LA#B00 | Renesas Electronics | Triacs Power Module - Lead Free | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12PM-12LA-1AQX3 | Renesas | Description: TRI61 MEDIPOWUSE Packaging: Bulk | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12PM-12LAA8 Produktcode: 114986 | Thyristoren, Dynistors, Triacs > Thyristoren, Dynistors | Produkt ist nicht verfügbar | ||||||||||||||||||||
BCR12PM-12LAA8#B00 | Renesas Electronics | Triacs Power Module - Lead Free | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12PM-12LAA8#B00 | Renesas Electronics Corporation | Description: TRIAC 600V 12A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Gate Trigger (Igt) (Max): 30 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220F Part Status: Obsolete Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12PM-12LB#B01 | Renesas Electronics | Triacs | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12PM-12LC#B00 | Renesas Electronics | Triacs | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12PM-12LC#B00 | Renesas | Description: BCR12PM-1TRIACS Packaging: Bulk | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12PM-12LD#B00 | Renesas Electronics America | Description: TRIAC 600V 12A | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12PM-12LD#B00 | Renesas Electronics | Triacs | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12PM-12LD#C0G | Renesas | Description: TRI61 MEDIPOWUSE Packaging: Bulk | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12PM-12LDA6#B00 | Renesas | Description: TRI61 MEDIPOWUSE Packaging: Bulk | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12PM-12LDAS#C03 | Renesas | Description: TRI61 MEDIPOWUSE Packaging: Bulk | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12PM-12LG#B00 | Renesas Electronics | Triacs | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12PM-12LG#B00 | Renesas Electronics America | Description: TRIAC 600V 12A | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12PM-12LGAN#B00 | Renesas Electronics | Triacs | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12PM-12LGAS#B00 | Renesas | Description: TMEDIPOWUSE Packaging: Bulk | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12PM-14LA#B00 | Renesas | Description: BCR12PM-1TRIACS Packaging: Bulk | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12PM-14LA#B00 | Renesas Electronics | Triacs | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12PM-14LG#B00 | Renesas Electronics | Triacs | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12PM-14LG#B00 | Renesas Electronics America | Description: TRIAC 800V 12A | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12PM-14LG#C0G | Renesas | Description: TMEDIPOWUSE Packaging: Bulk | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12PM-14LGAS#B00 | Renesas | Description: TMEDIPOWUSE Packaging: Bulk | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12PM-14LJ#B00 | Renesas Electronics America | Description: TRIAC 800V 12A | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR12PM-14LJ#B00 | Renesas Electronics | Triacs | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133 | infineon | 04+ SOT-23 | auf Bestellung 32100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR133 | Infineon Technologies | Bipolar Transistors - Pre-Biased | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133 | INF | SOT23 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR133 E6327 : BCR133E6327HTSA1 | Infineon Technologies | BCR133E6327 TRANS PREBIAS NPN 200MW SOT23-3 | auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCR133/WC | INFINEON | 09+ | auf Bestellung 3018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR133E6327 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ Mounting: SMD Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ Case: SOT23 Frequency: 130MHz | auf Bestellung 6161 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR133E6327 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133E6327 Produktcode: 52142 | Transistoren > Bipolar-Transistoren NPN | Produkt ist nicht verfügbar | ||||||||||||||||||||
BCR133E6327 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ Mounting: SMD Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ Case: SOT23 Frequency: 130MHz Anzahl je Verpackung: 1 Stücke | auf Bestellung 6161 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR133E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 200mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133E6327HTSA1 | Infineon Technologies | Digital Transistors AF TRANS DIGITAL BJT NPN 50V 100MA | auf Bestellung 9640 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR133E6327HTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 130 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 51000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR133E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 200mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 429000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR133E6327HTSA1 | Infineon | NPN 100mA 50V 200mW 130MHz w/ res. 10k+10k BCR133E ; Possible Substitute: PDTC114ET BCR133E6433 BCR133 TBCR133 Anzahl je Verpackung: 100 Stücke | auf Bestellung 295 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR133E6327HTSA1 | INFINEON | Description: INFINEON - BCR133E6327HTSA1 - Bipolarer Transistor, pre-biased/digital, BRT, Einfach NPN, 50 V, 50 V, 100 mA, 10 kohm, 10 kohm tariffCode: 85332100 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 30hFE hazardous: true rohsPhthalatesCompliant: YES Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 200mW productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 50V | auf Bestellung 44385 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCR133E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 200mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 200mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR133E6327HTSA1 | Infineon Technologies | Транзистор цифровий smd; Тип стр. = NPN; Ic = 100 мА; ft, МГц = 130; hFE = 30 @ 5 мA, 5 В; Icutoff-max = 100 нА; R1, кОм = 10; R2, кОм = 10; Uceo(sat), В @ Ic, Ib = 0,3 @ 500 мкA, 10 мА; Uсe, B = 50; Р, Вт = 0,2; Тексп, °C = -65...+150; SOT-23-3 | auf Bestellung 1008 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR133E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 200mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133E6327HTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 130 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 54209 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR133E6327HTSA1 | INFINEON | Description: INFINEON - BCR133E6327HTSA1 - Bipolarer Transistor, pre-biased/digital, BRT, Einfach NPN, 50 V, 50 V, 100 mA, 10 kohm, 10 kohm tariffCode: 85332100 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 30hFE hazardous: false rohsPhthalatesCompliant: YES Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 200mW productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 50V | auf Bestellung 44385 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCR133E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 200mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR133E6327XT | Infineon Technologies | Bipolar Transistors - Pre-Biased AF TRANS DIGITAL BJT NPN 50V 100MA | auf Bestellung 5036 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR133E6393 | Infineon Technologies | Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: PG-SOT23-3-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 130 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133E6393HTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 130 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133E6433HTMA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 130 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133E6433HTMA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133E6433HTMA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 130 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133E6433HTMA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133F | INFINEON | 09+ | auf Bestellung 35968 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR133F-E6327 | INFINEON | SOT23 | auf Bestellung 2661 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR133S | Infineon Technologies | Bipolar Transistors - Pre-Biased | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133S | INFINEON | SOT-363 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR133S-H6327 | Infineon | auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR133SB6327XT | Infineon Technologies | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 130MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: PG-SOT363-PO Part Status: Discontinued at Digi-Key | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133SE6327 | INF | 07+; | auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR133SE6327BTSA1 | Infineon Technologies | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 130MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: PG-SOT363-PO Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133SE6327XT | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133SE6433 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133SE6433BTMA1 | Infineon Technologies | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 130MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: PG-SOT363-PO Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133SE6433XT | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133SH6327 Produktcode: 162847 | Transistoren > Bipolar-Transistoren NPN | Produkt ist nicht verfügbar | ||||||||||||||||||||
BCR133SH6327 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ Mounting: SMD Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: NPN x2 Power dissipation: 0.25W Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ Case: SOT363 Frequency: 130MHz | auf Bestellung 2873 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR133SH6327 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ Mounting: SMD Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: NPN x2 Power dissipation: 0.25W Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ Case: SOT363 Frequency: 130MHz Anzahl je Verpackung: 1 Stücke | auf Bestellung 2873 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR133SH6327XTSA1 | Infineon Technologies | Description: TRANS PREBIAS 2NPN 50V SOT363-6 Packaging: Cut Tape (CT) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 130MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: PG-SOT363-PO Part Status: Last Time Buy | auf Bestellung 3947 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR133SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 198000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR133SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR133SH6327XTSA1 | Infineon | auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR133SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133SH6327XTSA1 | INFINEON | Description: INFINEON - BCR133SH6327XTSA1 - Bipolarer Transistor, pre-biased/digital, Zweifach npn, 50 V, 100 mA, 1 kohm, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 30hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 1kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: SOT-363 Anzahl der Pins: 6 Pins Produktpalette: BCR133 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: Zweifach npn Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: -V SVHC: No SVHC (23-Jan-2024) | auf Bestellung 7580 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCR133SH6327XTSA1 | Infineon Technologies | Description: TRANS PREBIAS 2NPN 50V SOT363-6 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 130MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: PG-SOT363-PO Part Status: Last Time Buy | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive 6-Pin SOT-363 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCR133SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 234000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR133SH6327XTSA1 | Infineon Technologies | Digital Transistors AF DIGITAL TRANSISTOR | auf Bestellung 231 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR133SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR133SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133SH6327XTSA1 | INFINEON | Description: INFINEON - BCR133SH6327XTSA1 - Bipolarer Transistor, pre-biased/digital, Zweifach npn, 50 V, 100 mA, 1 kohm, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 30hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 1kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: SOT-363 Anzahl der Pins: 6 Pins Produktpalette: BCR133 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: Zweifach npn Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: -V SVHC: No SVHC (23-Jan-2024) | auf Bestellung 7580 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCR133SH6433XTMA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 140000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR133SH6433XTMA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive AEC-Q101 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133SH6433XTMA1 | Infineon Technologies | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 130MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: PG-SOT363-PO Part Status: Discontinued at Digi-Key | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133SH6433XTMA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133T | INFINEON | SOT23 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR133T | INFINEON | 02+ SOT-523 | auf Bestellung 2980 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR133T E6327 | INFINEON | SOT423-WC | auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR133T-E6327 | INFINEON | SOT23 | auf Bestellung 1700 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR133TE6327 | Infineon Technologies | Description: BIPOLAR DIGITAL TRANSISTOR Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: PG-SOT23-3-11 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 130 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133U | INFINEON | 09+ | auf Bestellung 174018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR133U E6327 | INFINEON | SOT163-WC PB-FRE | auf Bestellung 42000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR133UE6327SOT163-WCPB-FREE | INFINEON | auf Bestellung 42000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR133W | infineon | SOT323 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR133WE6327 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133WE6327 | Infineon Technologies | Description: BIPOLAR DIGITAL TRANSISTOR Packaging: Bulk Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133WE6327HTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: PG-SOT323 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 130 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133WE6327HTSA1 | Infineon Technologies | Bipolar Transistors - Pre-Biased | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133WE6327XT | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133WH6327 | Infineon Technologies | Description: BIPOLAR DIGITAL TRANSISTOR Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 130 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133WH6327XTSA1 | Infineon Technologies | Digital Transistors AF DIGITAL TRANSISTOR | auf Bestellung 32677 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR133WH6327XTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT323 Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: PG-SOT323 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 130 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 12828 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR133WH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive AEC-Q101 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133WH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive AEC-Q101 3-Pin SOT-323 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR133WH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133WH6327XTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: PG-SOT323 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 130 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133WH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive AEC-Q101 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR133WH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive AEC-Q101 3-Pin SOT-323 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR135 | INFINEON | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR135 | Infineon Technologies | Digital Transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR135-E6327 | Infineon | auf Bestellung 39000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR135E6327 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ Mounting: SMD Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 47kΩ Case: SOT23 Frequency: 150MHz | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR135E6327 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ Mounting: SMD Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 47kΩ Case: SOT23 Frequency: 150MHz Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR135E6327 Produktcode: 119637 | Transistoren > Bipolar-Transistoren NPN | Produkt ist nicht verfügbar | ||||||||||||||||||||
BCR135E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 200mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR135E6327HTSA1 | INFINEON | Description: INFINEON - BCR135E6327HTSA1 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 100 mA, 10 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 70hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: -V | auf Bestellung 27621 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCR135E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 200mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR135E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 200mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR135E6327HTSA1 | Infineon Technologies | Digital Transistors NPN Silicon Digital TRANSISTOR | auf Bestellung 36738 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR135E6327HTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 29789 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR135E6327HTSA1 | Infineon | NPN 100mA 50V 200mW 150MHz w/ res. 10k+47k BCR135 TBCR135 Anzahl je Verpackung: 250 Stücke | auf Bestellung 5065 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR135E6327HTSA1 | INFINEON | Description: INFINEON - BCR135E6327HTSA1 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 100 mA, 10 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 70hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: -V | auf Bestellung 27621 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCR135E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 200mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 390000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR135E6327HTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 200mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR135E6327HTSA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 27000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR135E6359HTMA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT23 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 | auf Bestellung 29380 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR135E6359HTMA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT23 Grade: Automotive Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR135E6433 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT23-3-11 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR135E6433HTMA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR135E6433HTMA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 240000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR135E6433HTMA1 | Infineon Technologies | Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT23 Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR135E6433HTMA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR135E6433HTMA1 | Infineon Technologies | Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR135F | infinen | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR135F | infinen | SOT523 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR135F/DTC114YM | INFINEON | 09+ | auf Bestellung 51018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR135S | INFINEON | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR135S | infinen | auf Bestellung 5456 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR135S | INFINEON | 04+ SOT-363 | auf Bestellung 3100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR135S-E6327 | Infineon | auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR135SE6327 | INF | 07+; | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR135SE6327 | INFINEON | 2000 TO23-6 | auf Bestellung 1683 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR135SE6327 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR135SE6327BTSA1 | Infineon Technologies | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: PG-SOT363-PO Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR135SE6327XT | Infineon Technologies | Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR135SH6327 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ Mounting: SMD Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: NPN x2 Power dissipation: 0.25W Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 47kΩ Case: SOT363 Frequency: 150MHz Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR135SH6327 | INFINEON TECHNOLOGIES | Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ Mounting: SMD Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: NPN x2 Power dissipation: 0.25W Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 47kΩ Case: SOT363 Frequency: 150MHz | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR135SH6327 | Infineon | 2NPN 50V 100mA 150MHz 250mW BCR135SH6327XTSA1 BCR135SH6327 Infineon TBCR135s Anzahl je Verpackung: 100 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR135SH6327XT | Infineon Technologies | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | auf Bestellung 690 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
BCR135SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR135SH6327XTSA1 | Infineon Technologies | Digital Transistors AF DIGITAL TRANSISTOR | auf Bestellung 10451 Stücke: Lieferzeit 14-28 Tag (e) |
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BCR135SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive 6-Pin SOT-363 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCR135SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR135SH6327XTSA1 | INFINEON | Description: INFINEON - BCR135SH6327XTSA1 - Bipolarer Transistor, pre-biased/digital, Zweifach npn, 50 V, 100 mA, 10 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 70hFE hazardous: true rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: SOT-363 Anzahl der Pins: 6 Pins Produktpalette: BCR135 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: Zweifach npn Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: -V | auf Bestellung 11960 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCR135SH6327XTSA1 | Infineon Technologies | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Cut Tape (CT) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: PG-SOT363-PO Part Status: Last Time Buy | auf Bestellung 23080 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR135SH6327XTSA1 | Infineon | auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BCR135SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR135SH6327XTSA1 | INFINEON | Description: INFINEON - BCR135SH6327XTSA1 - Bipolarer Transistor, pre-biased/digital, Zweifach npn, 50 V, 100 mA, 10 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 70hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: SOT-363 Anzahl der Pins: 6 Pins Produktpalette: BCR135 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: Zweifach npn Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: -V | auf Bestellung 11960 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BCR135SH6327XTSA1 | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 210000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR135SH6327XTSA1 | Infineon Technologies | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: PG-SOT363-PO Part Status: Last Time Buy | auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR135SH6827XTSA1 | Infineon Technologies | Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: PG-SOT363-PO Part Status: Last Time Buy | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR135T | 1NF | 10+ SOT-523 | auf Bestellung 99000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR135TE6327 | Infineon Technologies | Description: BIPOLAR DIGITAL TRANSISTOR Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT23-3-11 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR135TE6327 | INFINEON | 07+ | auf Bestellung 6010 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR135W | INFINEON | 09+ | auf Bestellung 3018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BCR135W | Infineon Technologies | Digital Transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
BCR135WE6327 | Infineon Technologies | Description: BIPOLAR DIGITAL TRANSISTOR Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms | Produkt ist nicht verfügbar |