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PJQ1820U-20V-R1PanjitMOSFETs
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PJQ1820U-20V_R1_00201PanjitMOSFETs 20V Dual-N channel MOSFET
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PJQ1820_R1_00001Panjit International Inc.Description: MOSFET 2N-CH 20V 0.8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 400mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1010-6L
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PJQ1820_R1_00001PanjitMOSFET /820/TR/7"/HF/5K/DFN1010-6L/MOS/DFN/NFET-20F1MN//PJ/DFN10106L-AS02/PJQ1820-ASV3/DFN10106L-AS01
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PJQ1821_R1_00001Panjit International Inc.Description: 20V P-CHANNEL ENHANCEMENT MODE M
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PJQ1821_R1_00001Panjit International Inc.Description: 20V P-CHANNEL ENHANCEMENT MODE M
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PJQ1821_R1_00001PanjitMOSFET /821/TR/7"/HF/5K/DFN1010-6L/MOS/DFN/NFET-20F1MP//PJ/DFN10106L-AS03/PJQ1821-ASV4/DFN10106L-AS01
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PJQ1902_R1_00001PanjitMOSFET /2/TR/7"/HF/8K/DFN 3L/MOS/DFN/NFET-30FNMN/NF30FN-QI01/PJ///
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PJQ1906_R1_00201PanjitMOSFETs 20V N-Channel Enhancement Mode MOSFET
auf Bestellung 7715 Stücke:
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4+0.87 EUR
10+0.6 EUR
100+0.38 EUR
500+0.24 EUR
1000+0.2 EUR
2500+0.18 EUR
5000+0.15 EUR
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PJQ1908-AU-R1-002A1PanjitArray
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PJQ1916_R1_00001PanjitMOSFET /G/TR/7"/HF/10K/DFN1006-3L/MOS/DFN/NFET-20FWMN//PJ/DFN10063L-AS03/PJQ1916-ASV6/DFN10062L-AS01
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PJQ1916_R1_00201Panjit International Inc.Description: 20V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: DFN1006-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 950mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PJQ1916_R1_00201Panjit International Inc.Description: 20V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: DFN1006-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 950mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Cut Tape (CT)
auf Bestellung 8976 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.61 EUR
52+0.4 EUR
100+0.27 EUR
500+0.21 EUR
1000+0.19 EUR
2000+0.18 EUR
5000+0.15 EUR
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PJQ1916_R1_00201PanjitMOSFETs 20V N-Channel Enhancement Mode MOSFET
auf Bestellung 8527 Stücke:
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7+0.5 EUR
11+0.31 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
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PJQ1917_R1_00001Panjit International Inc.Description: 20V P-CHANNEL ENHANCEMENT MODE M
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PJQ1917_R1_00001PanjitMOSFET /H/TR/7"/HF/10K/DFN1006-3L/MOS/DFN/NFET-20FWMP//PJ/DFN10063L-AS04/PJQ1917-ASV7/DFN10062L-AS01
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PJQ1917_R1_00201PanjitMOSFETs 20V P-Channel Enhancement Mode MOSFET
auf Bestellung 8968 Stücke:
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5+0.7 EUR
10+0.52 EUR
100+0.3 EUR
500+0.2 EUR
1000+0.15 EUR
2500+0.13 EUR
5000+0.12 EUR
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PJQ2405-AU_R1_000A1PanjitMOSFET 20V P-Channel Enhancement Mode MOSFET
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PJQ2405-AU_R1_000A1Panjit International Inc.Description: 20V P-CHANNEL ENHANCEMENT MODE M
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PJQ2405-R1-00001PanjitMOSFET DFN2020B-6L/MOS/NFET-20FIMP
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PJQ2405_R1_00001Panjit International Inc.Description: 20V P-CHANNEL ENHANCEMENT MODE M
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1785 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: DFN2020B-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 2.8W (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.2A, 4.5V
auf Bestellung 1709 Stücke:
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19+1.13 EUR
30+0.7 EUR
100+0.45 EUR
500+0.35 EUR
1000+0.31 EUR
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PJQ2405_R1_00001Panjit International Inc.Description: 20V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1785 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: DFN2020B-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 2.8W (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
FET Type: P-Channel
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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PJQ2405_R1_00001PanjitMOSFET 20V P-Channel Enhancement Mode MOSFET
auf Bestellung 3000 Stücke:
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3+1.15 EUR
10+1 EUR
100+0.69 EUR
500+0.57 EUR
1000+0.5 EUR
3000+0.43 EUR
6000+0.4 EUR
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PJQ2407_R1_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020B-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 11645 Stücke:
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14+1.51 EUR
23+0.93 EUR
100+0.6 EUR
500+0.45 EUR
1000+0.4 EUR
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PJQ2407_R1_00001PanjitMOSFET 30V P-Channel Enhancement Mode MOSFET
auf Bestellung 3000 Stücke:
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4+0.95 EUR
10+0.81 EUR
100+0.61 EUR
500+0.48 EUR
1000+0.38 EUR
3000+0.32 EUR
9000+0.29 EUR
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PJQ2407_R1_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020B-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
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3000+0.33 EUR
6000+0.31 EUR
Mindestbestellmenge: 3000 Stücke
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PJQ2408_R1_00001PanjitMOSFET 30V N-Channel Enhancement Mode MOSFET
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PJQ2408_R1_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 781 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020B-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PJQ2408_R1_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 781 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020B-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ2409_R1_00001Panjit International Inc.Description: DFN2020B-6L, MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020B-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PJQ2409_R1_00001Panjit International Inc.Description: DFN2020B-6L, MOSFET
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020B-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
auf Bestellung 2942 Stücke:
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22+0.96 EUR
29+0.75 EUR
100+0.44 EUR
500+0.42 EUR
1000+0.29 EUR
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PJQ2409_R1_00001PanjitMOSFET 30V P-Channel Enhancement Mode MOSFET
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PJQ2410_R1_00001Panjit International Inc.Description: DFN2020B-6L, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020B-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Produkt ist nicht verfügbar
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PJQ2410_R1_00001PanjitMOSFET 30V N-Channel Enhancement Mode MOSFET
auf Bestellung 3000 Stücke:
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4+0.98 EUR
10+0.75 EUR
100+0.42 EUR
1000+0.29 EUR
3000+0.27 EUR
9000+0.23 EUR
24000+0.21 EUR
Mindestbestellmenge: 4 Stücke
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PJQ2410_R1_00001Panjit International Inc.Description: DFN2020B-6L, MOSFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020B-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
auf Bestellung 2784 Stücke:
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17+1.26 EUR
27+0.77 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.33 EUR
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PJQ2416_R1_00001Panjit International Inc.Description: DFN2020B-6L, MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1177 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: DFN2020B-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 1428 Stücke:
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23+0.94 EUR
26+0.81 EUR
100+0.56 EUR
500+0.44 EUR
1000+0.36 EUR
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PJQ2416_R1_00001Panjit International Inc.Description: DFN2020B-6L, MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1177 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: DFN2020B-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ2416_R1_00001PanjitMOSFET 20V N-Channel Enhancement Mode MOSFET
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PJQ2422_R1_00001Panjit International Inc.Description: DFN2020B-6L, MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 392 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020B-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 147 Stücke:
Lieferzeit 10-14 Tag (e)
20+1.09 EUR
32+0.67 EUR
100+0.43 EUR
Mindestbestellmenge: 20 Stücke
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PJQ2422_R1_00001PanjitMOSFET 30V N-Channel Enhancement Mode MOSFET
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 Mindestbestellmenge: 4 Stücke
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PJQ2422_R1_00001Panjit International Inc.Description: DFN2020B-6L, MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 392 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020B-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ2460-AU_R1_000A1PanjitMOSFET 60V N-Channel Enhancement Mode MOSFET
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PJQ2460-AU_R1_000A1Panjit International Inc.Description: DFN2020B-6L, MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ2460-AU_R1_000A1Panjit International Inc.Description: DFN2020B-6L, MOSFET
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 Mindestbestellmenge: 3000 Stücke
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PJQ2460_R1_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020B-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 5530 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.8 EUR
31+0.69 EUR
100+0.48 EUR
500+0.37 EUR
1000+0.3 EUR
Mindestbestellmenge: 27 Stücke
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PJQ2460_R1_00001PanjitMOSFET 60V N-Channel Enhancement Mode MOSFET
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PJQ2460_R1_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020B-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+0.27 EUR
Mindestbestellmenge: 3000 Stücke
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PJQ2461-AU_R1_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ2461-AU_R1_000A1PanjitMOSFET 60V P-Channel Enhancement Mode MOSFET
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 Mindestbestellmenge: 4 Stücke
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PJQ2461-R1-00001PanjitMOSFETs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ2461_R1_00001PanjitMOSFETs 60V P-Channel Enhancement Mode MOSFET
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PJQ2461_R1_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
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PJQ2463A-AU_R1_000A1Panjit International Inc.Description: DFN2020B-6L, MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ2463A-AU_R1_000A1Panjit International Inc.Description: DFN2020B-6L, MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ2463A-AU_R1_000A1PanjitMOSFET 60V P-Channel Enhancement Mode MOSFET
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 Mindestbestellmenge: 3 Stücke
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PJQ2463A-R1-00001PanjitMOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ2463A_R1_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020B-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ2463A_R1_00001PanjitMOSFET 60V P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ2463A_R1_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020B-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ2566A_R1_00201PanjitMOSFETs 60V N-Channel Enhancement Mode MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
2+2 EUR
10+1.25 EUR
100+0.82 EUR
500+0.64 EUR
1000+0.57 EUR
3000+0.5 EUR
6000+0.48 EUR
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PJQ2568A_R1_00201Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.55 EUR
21+1.04 EUR
100+0.71 EUR
500+0.57 EUR
1000+0.52 EUR
Mindestbestellmenge: 14 Stücke
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PJQ2568A_R1_00201PanjitMOSFETs 60V N-Channel Enhancement Mode MOSFET
auf Bestellung 2530 Stücke:
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2+1.89 EUR
10+1.18 EUR
100+0.77 EUR
500+0.6 EUR
1000+0.54 EUR
3000+0.46 EUR
6000+0.44 EUR
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PJQ2568A_R1_00201Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.45 EUR
Mindestbestellmenge: 3000 Stücke
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PJQ2800_R1_00001Panjit International Inc.Description: 20V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
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PJQ2800_R1_00001Panjit International Inc.Description: 20V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
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PJQ2815-R1-00001PanjitMOSFET DFN2020-6L/MOS/DFN/NFET-20FHMP
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PJQ2815_R1_00001Panjit International Inc.Description: MOSFET 2P-CH 20V 4.2A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 907pF @ 10V
Rds On (Max) @ Id, Vgs: 52mOhm @ 4.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020-6L
Part Status: Active
auf Bestellung 3000 Stücke:
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3000+0.46 EUR
Mindestbestellmenge: 3000 Stücke
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PJQ2815_R1_00001PanjitMOSFET 20V P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ2815_R1_00001Panjit International Inc.Description: MOSFET 2P-CH 20V 4.2A 6DFN
Part Status: Active
Supplier Device Package: DFN2020-6L
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Rds On (Max) @ Id, Vgs: 52mOhm @ 4.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 907pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 7770 Stücke:
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17+1.24 EUR
20+1.07 EUR
100+0.74 EUR
500+0.62 EUR
1000+0.52 EUR
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PJQ2815_S1_00001PanjitMOSFET 20V P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
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PJQ2888_R1_00001PanjitMOSFET /888/TR/7"/HF/3K/DFN2020-8L/MOS/DFN/NFET-20FOMP//PJ/DFN20208L-AS02/DFN20208L-AS03/DFN20208L-AS01
auf Bestellung 6000 Stücke:
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PJQ4401P-AU_R2_000A1Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3228 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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PJQ4401P-AU_R2_000A1PanjitMOSFETs 30V P-Channel Enhancement Mode MOSFET
auf Bestellung 4115 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.92 EUR
10+1.32 EUR
100+0.88 EUR
500+0.71 EUR
1000+0.58 EUR
2500+0.57 EUR
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PJQ4401P-AU_R2_000A1Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3228 pF @ 15 V
auf Bestellung 3593 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.31 EUR
15+1.45 EUR
100+0.95 EUR
500+0.74 EUR
1000+0.68 EUR
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PJQ4401P_R2_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3228 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4401P_R2_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3228 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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PJQ4401P_R2_00001PanjitMOSFETs 30V P-Channel Enhancement Mode MOSFET
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PJQ4402P-AU_R2_000A1Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2436 pF @ 25 V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 4110 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.9 EUR
18+1.19 EUR
100+0.77 EUR
500+0.61 EUR
1000+0.55 EUR
2000+0.5 EUR
Mindestbestellmenge: 11 Stücke
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PJQ4402P-AU_R2_000A1PanjitMOSFET /4402/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-30FQMN//PJ/DFN33338L-AS39/PJQ4402P-ASB9/DFN33338L-AS01
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4402P-AU_R2_000A1Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 2436 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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PJQ4402P-R2-00001PanjitMOSFET DFN3333-8L/MOS/DFN/NFET-30FQMN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4402P_R2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 2436 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 4466 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.19 EUR
21+1.04 EUR
100+0.71 EUR
500+0.6 EUR
1000+0.51 EUR
2000+0.45 EUR
Mindestbestellmenge: 18 Stücke
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PJQ4402P_R2_00001PanjitMOSFET /4402/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-30FQMN//PJ/DFN33338L-AS15/PJQ4402P-ASB9/DFN33338L-AS01
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PJQ4402P_R2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2436 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN3333-8
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PJQ4403P-R2-00001PanjitMOSFET DFN3333-8L/MOS/DFN/NFET-30FQMP
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PJQ4403P_R2_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.39 EUR
10000+0.36 EUR
15000+0.35 EUR
Mindestbestellmenge: 5000 Stücke
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PJQ4403P_R2_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 15 V
auf Bestellung 19652 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.71 EUR
20+1.07 EUR
100+0.69 EUR
500+0.54 EUR
1000+0.48 EUR
2000+0.44 EUR
Mindestbestellmenge: 13 Stücke
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PJQ4403P_R2_00001PanjitMOSFETs 30V P-Channel Enhancement Mode MOSFET
auf Bestellung 109732 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.69 EUR
10+1.05 EUR
100+0.68 EUR
500+0.52 EUR
1000+0.43 EUR
5000+0.38 EUR
10000+0.33 EUR
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PJQ4404P-AU_R2_000A1Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PJQ4404P-AU_R2_000A1PanjitMOSFET /4404/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-30FQMN//PJ/DFN33338L-AS14/PJQ4404P-AS44/DFN33338L-AS01
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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PJQ4404P-AU_R2_000A1Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3026 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.21 EUR
21+1.04 EUR
100+0.73 EUR
500+0.56 EUR
1000+0.45 EUR
2000+0.4 EUR
Mindestbestellmenge: 18 Stücke
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PJQ4404P_R2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V
auf Bestellung 4998 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.52 EUR
23+0.95 EUR
100+0.62 EUR
500+0.48 EUR
1000+0.43 EUR
2000+0.38 EUR
Mindestbestellmenge: 14 Stücke
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PJQ4404P_R2_00001PanjitMOSFET /4404/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-30FQMN//PJ/DFN33338L-AS05/PJQ4404P-AS44/DFN33338L-AS01
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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PJQ4404P_R2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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PJQ4407P-AU-R2-000A1PanjitMOSFETs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4407P-R1-00001PanjitMOSFETs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4407P-R2-00001PanjitMOSFETs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4407P_R1_00001PanjitMOSFETs 30V P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3 Stücke
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PJQ4407P_R1_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ4407P_R2_00001PanjitMOSFETs 30V P-Channel Enhancement Mode MOSFET
auf Bestellung 3960 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.58 EUR
10+0.98 EUR
100+0.67 EUR
500+0.52 EUR
1000+0.44 EUR
2500+0.4 EUR
5000+0.35 EUR
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