Produkte > PJQ
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||
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| PJQ1820U-20V-R1 | Panjit | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ1820_R1_00001 | Panjit | MOSFET /820/TR/7"/HF/5K/DFN1010-6L/MOS/DFN/NFET-20F1MN//PJ/DFN10106L-AS02/PJQ1820-ASV3/DFN10106L-AS01 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ1820_R1_00001 | Panjit International Inc. | Description: MOSFET 2N-CH 20V 0.8A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 400mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN1010-6L | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ1821_R1_00001 | Panjit International Inc. | Description: 20V P-CHANNEL ENHANCEMENT MODE M | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ1821_R1_00001 | Panjit International Inc. | Description: 20V P-CHANNEL ENHANCEMENT MODE M | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ1821_R1_00001 | Panjit | MOSFET /821/TR/7"/HF/5K/DFN1010-6L/MOS/DFN/NFET-20F1MP//PJ/DFN10106L-AS03/PJQ1821-ASV4/DFN10106L-AS01 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ1902_R1_00001 | Panjit | MOSFET /2/TR/7"/HF/8K/DFN 3L/MOS/DFN/NFET-30FNMN/NF30FN-QI01/PJ/// | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ1906_R1_00201 | Panjit | MOSFETs 20V N-Channel Enhancement Mode MOSFET | auf Bestellung 8302 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ1908-AU-R1-002A1 | Panjit | Array | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ1908-AU_R1_002A1 | PanJit Semiconductor | PJQ1908-AU-R1 SMD N channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ1908_R1_00201 | PanJit Semiconductor | PJQ1908-R1 SMD N channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ1916_R1_00001 | Panjit | MOSFET /G/TR/7"/HF/10K/DFN1006-3L/MOS/DFN/NFET-20FWMN//PJ/DFN10063L-AS03/PJQ1916-ASV6/DFN10062L-AS01 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ1916_R1_00201 | Panjit International Inc. | Description: 20V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 950mA (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ1916_R1_00201 | Panjit | MOSFETs 20V N-Channel Enhancement Mode MOSFET | auf Bestellung 9295 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ1916_R1_00201 | Panjit International Inc. | Description: 20V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 950mA (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V | auf Bestellung 8976 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ1917_R1_00001 | Panjit | MOSFET /H/TR/7"/HF/10K/DFN1006-3L/MOS/DFN/NFET-20FWMP//PJ/DFN10063L-AS04/PJQ1917-ASV7/DFN10062L-AS01 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ1917_R1_00201 | Panjit | MOSFETs 20V P-Channel Enhancement Mode MOSFET | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ2405-AU_R1_000A1 | Panjit International Inc. | Description: 20V P-CHANNEL ENHANCEMENT MODE M | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2405-AU_R1_000A1 | Panjit International Inc. | Description: 20V P-CHANNEL ENHANCEMENT MODE M | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2405-AU_R1_000A1 | Panjit | MOSFET 20V P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2405-R1-00001 | Panjit | MOSFET DFN2020B-6L/MOS/NFET-20FIMP | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2405_R1_00001 | Panjit International Inc. | Description: 20V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 7.2A, 4.5V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020B-6 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1785 pF @ 10 V | auf Bestellung 2300 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ2405_R1_00001 | Panjit International Inc. | Description: 20V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 7.2A, 4.5V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020B-6 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1785 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2405_R1_00001 | Panjit | MOSFET 20V P-Channel Enhancement Mode MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ2407_R1_00001 | Panjit | MOSFET 30V P-Channel Enhancement Mode MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ2407_R1_00001 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8.4A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020B-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V | auf Bestellung 2525 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ2407_R1_00001 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8.4A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020B-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2408_R1_00001 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020B-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 781 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2408_R1_00001 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020B-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 781 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2408_R1_00001 | Panjit | MOSFET 30V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2409_R1_00001 | Panjit International Inc. | Description: DFN2020B-6L, MOSFET Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020B-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2409_R1_00001 | Panjit | MOSFET 30V P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2409_R1_00001 | Panjit International Inc. | Description: DFN2020B-6L, MOSFET Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020B-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V | auf Bestellung 2942 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ2410_R1_00001 | Panjit | MOSFET 30V N-Channel Enhancement Mode MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ2410_R1_00001 | Panjit International Inc. | Description: DFN2020B-6L, MOSFET Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020B-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2410_R1_00001 | Panjit International Inc. | Description: DFN2020B-6L, MOSFET Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020B-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V | auf Bestellung 2784 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ2416_R1_00001 | Panjit International Inc. | Description: DFN2020B-6L, MOSFET Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 9.5A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN2020B-6 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1177 pF @ 10 V | auf Bestellung 1428 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ2416_R1_00001 | Panjit International Inc. | Description: DFN2020B-6L, MOSFET Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 9.5A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN2020B-6 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1177 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2416_R1_00001 | Panjit | MOSFET 20V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2422_R1_00001 | Panjit | MOSFET 30V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2422_R1_00001 | Panjit International Inc. | Description: DFN2020B-6L, MOSFET Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020B-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 392 pF @ 25 V | auf Bestellung 147 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ2422_R1_00001 | Panjit International Inc. | Description: DFN2020B-6L, MOSFET Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020B-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 392 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2460-AU_R1_000A1 | PanJit Semiconductor | PJQ2460-AU-R1 SMD N channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2460-AU_R1_000A1 | Panjit International Inc. | Description: DFN2020B-6L, MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2460-AU_R1_000A1 | Panjit | MOSFET 60V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2460-AU_R1_000A1 | Panjit International Inc. | Description: DFN2020B-6L, MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2460_R1_00001 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 3.2A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020B-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ2460_R1_00001 | Panjit | MOSFET 60V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2460_R1_00001 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 3.2A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020B-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V | auf Bestellung 5530 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ2461-AU_R1_000A1 | Panjit | MOSFET 60V P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2461-AU_R1_000A1 | Panjit International Inc. | Description: 60V P-CHANNEL ENHANCEMENT MODE M | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2461-AU_R1_000A1 | Panjit International Inc. | Description: 60V P-CHANNEL ENHANCEMENT MODE M | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2461-R1-00001 | Panjit | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2461_R1_00001 | Panjit International Inc. | Description: 60V P-CHANNEL ENHANCEMENT MODE M | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2461_R1_00001 | Panjit | MOSFETs 60V P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2461_R1_00001 | Panjit International Inc. | Description: 60V P-CHANNEL ENHANCEMENT MODE M | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2463A-AU_R1_000A1 | Panjit International Inc. | Description: DFN2020B-6L, MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2463A-AU_R1_000A1 | Panjit International Inc. | Description: DFN2020B-6L, MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2463A-AU_R1_000A1 | Panjit | MOSFET 60V P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2463A-R1-00001 | Panjit | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2463A_R1_00001 | Panjit International Inc. | Description: 60V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020B-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V | auf Bestellung 1475 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ2463A_R1_00001 | Panjit International Inc. | Description: 60V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020B-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2463A_R1_00001 | Panjit | MOSFET 60V P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2566A_R1_00201 | Panjit | MOSFETs 60V N-Channel Enhancement Mode MOSFET | auf Bestellung 2985 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ2568A_R1_00201 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ2568A_R1_00201 | Panjit | MOSFETs 60V N-Channel Enhancement Mode MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ2568A_R1_00201 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ2800_R1_00001 | Panjit International Inc. | Description: 20V N-CHANNEL ENHANCEMENT MODE M | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2800_R1_00001 | Panjit International Inc. | Description: 20V N-CHANNEL ENHANCEMENT MODE M | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2815-R1-00001 | Panjit | MOSFET DFN2020-6L/MOS/DFN/NFET-20FHMP | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2815_R1_00001 | Panjit International Inc. | Description: MOSFET 2P-CH 20V 4.2A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 907pF @ 10V Rds On (Max) @ Id, Vgs: 52mOhm @ 4.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020-6L Part Status: Active | auf Bestellung 7770 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ2815_R1_00001 | Panjit | MOSFET 20V P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2815_R1_00001 | Panjit International Inc. | Description: MOSFET 2P-CH 20V 4.2A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 907pF @ 10V Rds On (Max) @ Id, Vgs: 52mOhm @ 4.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020-6L Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ2815_S1_00001 | Panjit | MOSFET 20V P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ2888_R1_00001 | Panjit | MOSFET /888/TR/7"/HF/3K/DFN2020-8L/MOS/DFN/NFET-20FOMP//PJ/DFN20208L-AS02/DFN20208L-AS03/DFN20208L-AS01 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4401P-AU_R2_000A1 | Panjit | MOSFET 30V P-Channel Enhancement Mode MOSFET | auf Bestellung 4780 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4401P-AU_R2_000A1 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3228 pF @ 15 V | auf Bestellung 4664 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4401P-AU_R2_000A1 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3228 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4401P-AU_R2_000A1 | PanJit Semiconductor | PJQ4401P-AU-R2 SMD P channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4401P_R2_00001 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3228 pF @ 15 V | auf Bestellung 1457 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4401P_R2_00001 | Panjit | MOSFET 30V P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4401P_R2_00001 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3228 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4402P-AU_R2_000A1 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2436 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4402P-AU_R2_000A1 | Panjit | MOSFET /4402/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-30FQMN//PJ/DFN33338L-AS39/PJQ4402P-ASB9/DFN33338L-AS01 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4402P-AU_R2_000A1 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2436 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4875 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4402P-R2-00001 | Panjit | MOSFET DFN3333-8L/MOS/DFN/NFET-30FQMN | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4402P_R2_00001 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2436 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4402P_R2_00001 | Panjit | MOSFET /4402/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-30FQMN//PJ/DFN33338L-AS15/PJQ4402P-ASB9/DFN33338L-AS01 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4402P_R2_00001 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2436 pF @ 25 V | auf Bestellung 4466 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4403P-R2-00001 | Panjit | MOSFET DFN3333-8L/MOS/DFN/NFET-30FQMP | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4403P_R2_00001 | PanJit Semiconductor | PJQ4403P-R2 SMD P channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4403P_R2_00001 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 15 V | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4403P_R2_00001 | Panjit | MOSFETs 30V P-Channel Enhancement Mode MOSFET | auf Bestellung 127138 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4403P_R2_00001 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 15 V | auf Bestellung 36229 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4404P-AU_R2_000A1 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3026 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4404P-AU_R2_000A1 | Panjit | MOSFET /4404/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-30FQMN//PJ/DFN33338L-AS14/PJQ4404P-AS44/DFN33338L-AS01 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4404P-AU_R2_000A1 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4404P_R2_00001 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4404P_R2_00001 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4404P_R2_00001 | Panjit | MOSFET /4404/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-30FQMN//PJ/DFN33338L-AS05/PJQ4404P-AS44/DFN33338L-AS01 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4407P-AU-R2-000A1 | Panjit | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4407P-R1-00001 | Panjit | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4407P-R2-00001 | Panjit | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4407P_R1_00001 | Panjit | MOSFETs 30V P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4407P_R1_00001 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4407P_R2_00001 | Panjit | MOSFETs 30V P-Channel Enhancement Mode MOSFET | auf Bestellung 3970 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4408P-AU_R2_000A1 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V Power Dissipation (Max): 2W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 4800 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4408P-AU_R2_000A1 | Panjit | MOSFET /4408/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-30FQMN//PJ/DFN33338L-AS20/PJQ4408P-AU-ASBF/DFN33338L-AS01 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4408P-AU_R2_000A1 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V Power Dissipation (Max): 2W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4408P-R2-00001 | Panjit | MOSFET DFN3333-8L/MOS/DFN/NFET-30FQMN | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4408P_R2_00001 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V Power Dissipation (Max): 2W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V | auf Bestellung 4869 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4408P_R2_00001 | Panjit | MOSFET 30V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4408P_R2_00001 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V Power Dissipation (Max): 2W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4409P-R2-00001 | Panjit | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4409P_R2_00001 | Panjit | MOSFETs 30V P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4409P_R2_00001 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V Power Dissipation (Max): 2W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4410P-R2-00001 | Panjit | MOSFETs DFN3333 N CHAN 30V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4410P_R2_00001 | Panjit | MOSFETs 30V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4410P_R2_00001 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 12Ohm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V | auf Bestellung 4700 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4410P_R2_00001 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 12Ohm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4411P_R2_00001 | Panjit International Inc. | Description: 20V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 4.5V Power Dissipation (Max): 2W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4659 pF @ 15 V | auf Bestellung 4935 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4411P_R2_00001 | Panjit International Inc. | Description: 20V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 4.5V Power Dissipation (Max): 2W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4659 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4414P_R2_00001 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V Power Dissipation (Max): 2W (Ta), 21W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 392 pF @ 25 V | auf Bestellung 4068 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4414P_R2_00001 | Panjit | MOSFET 30V N-Channel Enhancement Mode MOSFET | auf Bestellung 4630 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4414P_R2_00001 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V Power Dissipation (Max): 2W (Ta), 21W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 392 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4416EP_R2_00001 | Panjit International Inc. | Description: 20V N-CHANNEL ENHANCEMENT MODE M | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4416EP_R2_00001 | Panjit | MOSFET 20V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4416EP_R2_00001 | Panjit International Inc. | Description: 20V N-CHANNEL ENHANCEMENT MODE M | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4431EP-AU_R2_002A1 | Panjit | MOSFET 30V P-Channel Enhancement Mode MOSFET | auf Bestellung 4890 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4433EP-AU_R2_002A1 | Panjit | MOSFET 30V P-Channel Enhancement Mode MOSFET | auf Bestellung 4930 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4433EP-AU_R2_002A1 | PanJit Semiconductor | PJQ4433EP-AU-R2 SMD P channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4433EP_R2_00201 | PanJit Semiconductor | PJQ4433EP-R2 SMD P channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4435EP-AU-R2 | Panjit | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4435EP-AU-R2-002A | Panjit | MOSFETs DFN33 3 3PCH AN30V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4435EP-AU_R2_002A1 | Panjit | MOSFETs 30V P-Channel Enhancement Mode MOSFET | auf Bestellung 4970 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4435EP-AU_R2_002A1 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4435EP-AU_R2_002A1 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4435EP-R2-00201 | Panjit | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4435EP_R2_00201 | Panjit International Inc. | Description: 30V P-CHANNEL STANDARD TRENCH MO Packaging: Cut Tape (CT) | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4435EP_R2_00201 | PanJit Semiconductor | PJQ4435EP-R2 SMD P channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4435EP_R2_00201 | Panjit | MOSFETs 30V P-Channel Standard Trench MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4435EP_R2_00201 | Panjit International Inc. | Description: 30V P-CHANNEL STANDARD TRENCH MO Packaging: Tape & Reel (TR) | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4437EP-AU_R2_002A1 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc) Rds On (Max) @ Id, Vgs: 15.4mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 4980 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4437EP-AU_R2_002A1 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc) Rds On (Max) @ Id, Vgs: 15.4mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4437EP-AU_R2_002A1 | Panjit | MOSFET 30V P-Channel Enhancement Mode MOSFET | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4437EP_R2_00201 | PanJit Semiconductor | PJQ4437EP-R2 SMD P channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4439EP-AU_R2_002A1 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 31A (Tc) Rds On (Max) @ Id, Vgs: 19.1mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1012 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 4955 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4439EP-AU_R2_002A1 | Panjit | MOSFET 30V P-Channel Enhancement Mode MOSFET | auf Bestellung 4995 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4439EP-AU_R2_002A1 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 31A (Tc) Rds On (Max) @ Id, Vgs: 19.1mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1012 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4439EP_R2_00201 | Panjit International Inc. | Description: 30V P-CHANNEL STANDARD TRENCH MO Packaging: Tape & Reel (TR) | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4439EP_R2_00201 | Panjit | MOSFETs 30V P-Channel Standard Trench MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4439EP_R2_00201 | PanJit Semiconductor | PJQ4439EP-R2 SMD P channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4439EP_R2_00201 | Panjit International Inc. | Description: 30V P-CHANNEL STANDARD TRENCH MO Packaging: Cut Tape (CT) | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4441P-AU_R2_000A1 | Panjit International Inc. | Description: 40V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 59.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4441P-AU_R2_000A1 | Panjit | MOSFET /4441/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-40FQMP//PJ/DFN33338L-AS49/PJQ4441P-ASM3/DFN33338L-AS01 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4441P-AU_R2_000A1 | Panjit International Inc. | Description: 40V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 59.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4280 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4441P_R2_00001 | Panjit | MOSFET /4441/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-40FQMP//PJ/DFN33338L-AS32/PJQ4441P-ASM3/DFN33338L-AS01 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4441P_R2_00001 | Panjit International Inc. | Description: 40V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 59.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4441P_R2_00001 | Panjit International Inc. | Description: 40V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 59.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4442P-AU_R2_000A1 | Panjit | MOSFET /4442/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-40FQMN//PJ/DFN33338L-AS34/PJQ4442P-ASM7/DFN33338L-AS01 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4443P-AU_R2_000A1 | Panjit International Inc. | Description: 40V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 2.1W (Ta), 59.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V | auf Bestellung 1002 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4443P-AU_R2_000A1 | Panjit | MOSFET 40V P-Channel Enhancement Mode MOSFET | auf Bestellung 4390 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4443P-AU_R2_000A1 | Panjit International Inc. | Description: 40V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 2.1W (Ta), 59.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4443P_R2_00001 | Panjit International Inc. | Description: 40V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 2.1W (Ta), 59.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V | auf Bestellung 3501 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4443P_R2_00001 | Panjit International Inc. | Description: 40V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 2.1W (Ta), 59.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4444P-AU_R2_000A1 | Panjit | MOSFET /4444/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-40FQMN//PJ/DFN33338L-AS55/PJQ4444P-ASB3/DFN33338L-AS01 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4444P-AU_R2_000A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 2.4W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1207 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4444P-AU_R2_000A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 2.4W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4444P_R2_00001 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4444P_R2_00001 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V | auf Bestellung 4677 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4446P-AU_R2_000A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 8A, 10V Power Dissipation (Max): 2.4W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4446P-AU_R2_000A1 | Panjit | MOSFET /4446/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-40FQMN//PJ/DFN33338L-AS38/PJQ4446P-ASE1/DFN33338L-AS01 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4446P-AU_R2_000A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 8A, 10V Power Dissipation (Max): 2.4W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4990 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4446P_R2_00001 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta), 41.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V | auf Bestellung 4980 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4446P_R2_00001 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta), 41.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4448P-AU_R2_000A1 | Panjit | MOSFET 40V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4448P-AU_R2_000A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 8A, 10V Power Dissipation (Max): 2.4W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4790 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4448P-AU_R2_000A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 8A, 10V Power Dissipation (Max): 2.4W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4448P_R2_00001 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 20 V | auf Bestellung 3049 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4448P_R2_00001 | Panjit | MOSFET 40V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4448P_R2_00001 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 20 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4451EP-AU_R2_002A1 | Panjit | MOSFET 40V P-Channel Enhancement Mode MOSFET | auf Bestellung 4960 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4453EP-AU-R2 | Panjit | Array | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4453EP-AU-R2-002A | Panjit | DFN33 3 3PCH AN40V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4453EP-AU_R2_002A1 | Panjit International Inc. | Description: 40V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2858 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4453EP-AU_R2_002A1 | Panjit | MOSFETs 40V P-Channel Enhancement Mode MOSFET | auf Bestellung 1928 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4453EP-AU_R2_002A1 | Panjit International Inc. | Description: 40V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2858 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ44605AP-AU_R2_002A1 | Panjit | MOSFETs 60V P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ44607AP-AU_R2_002A1 | Panjit | MOSFETs 60V P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4460AP-AU_R2_000A1 | Panjit | MOSFET 60V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4460AP-AU_R2_000A1 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 6A, 10V Power Dissipation (Max): 2.4W (Ta), 23.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4460AP-AU_R2_000A1 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 6A, 10V Power Dissipation (Max): 2.4W (Ta), 23.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4379 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4460AP_R2_00001 | Panjit | MOSFET 60V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ44611AP-AU_R2_002A1 | Panjit | MOSFETs 60V P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4463AP-AU_R2_000A1 | Panjit International Inc. | Description: 60V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 12244 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4463AP-AU_R2_000A1 | Panjit International Inc. | Description: 60V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4463AP-AU_R2_000A1 | Panjit | MOSFET /4463/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-60FQMP//PJ/DFN33338L-AS44/PJQ4463AP-AS93/DFN33338L-AS01 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4463AP_R2_00001 | Panjit International Inc. | Description: 60V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V | auf Bestellung 4955 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4463AP_R2_00001 | Panjit | MOSFET /4463/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-60FQMP//PJ/DFN33338L-AS12/PJQ4463AP-AS93/DFN33338L-AS01 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4463AP_R2_00001 | Panjit International Inc. | Description: 60V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4464AP-AU_R2_000A1 | Panjit | MOSFETs 60V N-Channel Enhancement Mode MOSFET | auf Bestellung 4710 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4464AP-AU_R2_000A1 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 33A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 16A, 10V Power Dissipation (Max): 2.4W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 3149 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4464AP-AU_R2_000A1 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 33A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 16A, 10V Power Dissipation (Max): 2.4W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4464AP_R2_00001 | Panjit | MOSFET /4464/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-60FQMN//PJ/DFN33338L-AS27/PJQ4464AP-ASJ5/DFN33338L-AS01 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4465AP-AU_R2_000A1 | Panjit International Inc. | Description: 60V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Power Dissipation (Max): 2W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4465AP-AU_R2_000A1 | Panjit | MOSFETs 60V P-Channel Enhancement Mode MOSFET | auf Bestellung 2182 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4465AP-AU_R2_000A1 | Panjit International Inc. | Description: 60V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Power Dissipation (Max): 2W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4990 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4465AP-AU_R2_000A1 | PanJit Semiconductor | PJQ4465AP-AU-R2 SMD P channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4465AP_R2_00001 | Panjit | MOSFET /4465/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-60FQMP//PJ/DFN33338L-AS48/PJQ4465AP-AST0/DFN33338L-AS01 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4466AP-AU_R2_000A1 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 33A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V Power Dissipation (Max): 2.4W (Ta), 53W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4466AP-AU_R2_000A1 | Panjit | MOSFET 60V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4466AP-AU_R2_000A1 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 33A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V Power Dissipation (Max): 2.4W (Ta), 53W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4466AP_R2_00001 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 33A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V Power Dissipation (Max): 2W (Ta), 44.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4466AP_R2_00001 | Panjit | MOSFET 60V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4466AP_R2_00001 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 33A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V Power Dissipation (Max): 2W (Ta), 44.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V | auf Bestellung 4131 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4468AP-AU-R2 | Panjit | MOSFET DFN3333-8L/MOS/DFN/NFET-60FQMN | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4468AP-R2-00001 | Panjit | MOSFETs DFN3333-8L/MOS/DFN/NFET-60FQMN | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4468AP_R2_00001 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V | auf Bestellung 4960 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4468AP_R2_00001 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4468AP_R2_00001 | Panjit | MOSFETs 60V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4476AP-AU_R2_000A1 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V Power Dissipation (Max): 2W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 4868 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4476AP-AU_R2_000A1 | Panjit | MOSFET 100V N-Channel Enhancement Mode MOSFET | auf Bestellung 4741 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4476AP-AU_R2_000A1 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V Power Dissipation (Max): 2W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4476AP_R2_00001 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V Power Dissipation (Max): 2W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4476AP_R2_00001 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V Power Dissipation (Max): 2W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4476AP_R2_00001 | Panjit | MOSFET /4476/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-100FQMN//PJ/DFN33338L-AS35/PJQ4476AP-ASN4/DFN33338L-AS01 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4524P-AU_R2_002A1 | PanJit Semiconductor | PJQ4524P-AU-R2 SMD N channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4526P-AU_R2_002A1 | PanJit Semiconductor | PJQ4526P-AU-R2 SMD N channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4526P-AU_R2_002A1 | Panjit | MOSFETs 30V N-Channel (LL) SGT MOSFET | auf Bestellung 4989 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4526P_R2_00201 | Panjit | MOSFETs 30V N-Channel (LL) SGT MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4528P-AU_R2_002A1 | PanJit Semiconductor | PJQ4528P-AU-R2 SMD N channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4530P-AU_R2_002A1 | PanJit Semiconductor | PJQ4530P-AU-R2 SMD N channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4530P-AU_R2_002A1 | Panjit | MOSFETs 30V N-Channel (LL) SGT MOSFET | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4534P-AU_R2_002A1 | PanJit Semiconductor | PJQ4534P-AU-R2 SMD N channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4534P_R2_00201 | PanJit Semiconductor | PJQ4534P-R2 SMD N channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4546P-AU_R2_002A1 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 64A; Idm: 256A; 42W; DFN3333-8 Drain-source voltage: 40V Drain current: 64A On-state resistance: 7.9mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 42W Polarisation: unipolar Kind of package: reel; tape Gate charge: 20nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 256A Mounting: SMD Case: DFN3333-8 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4546P-AU_R2_002A1 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 64A; Idm: 256A; 42W; DFN3333-8 Drain-source voltage: 40V Drain current: 64A On-state resistance: 7.9mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 42W Polarisation: unipolar Kind of package: reel; tape Gate charge: 20nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 256A Mounting: SMD Case: DFN3333-8 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4546P-AU_R2_002A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 64A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: DFN3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4546P-AU_R2_002A1 | Panjit | MOSFETs 40V N-Channel Enhancement Mode MOSFET | auf Bestellung 3405 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4546P-AU_R2_002A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 64A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: DFN3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4546VP-AU_R2_002A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 61A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4546VP-AU_R2_002A1 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 61A; Idm: 244A; 42W; DFN3333-8 Drain-source voltage: 40V Drain current: 61A On-state resistance: 7.7mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 42W Polarisation: unipolar Kind of package: reel; tape Gate charge: 23nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 244A Mounting: SMD Case: DFN3333-8 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4546VP-AU_R2_002A1 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 61A; Idm: 244A; 42W; DFN3333-8 Drain-source voltage: 40V Drain current: 61A On-state resistance: 7.7mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 42W Polarisation: unipolar Kind of package: reel; tape Gate charge: 23nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 244A Mounting: SMD Case: DFN3333-8 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4546VP-AU_R2_002A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 61A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2590 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4546VP-AU_R2_002A1 | Panjit | MOSFET 40V N-Channel Enhancement Mode MOSFET | auf Bestellung 4995 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4548P-AU_R2_002A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 43A (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3660 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4548P-AU_R2_002A1 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 172A; 30W; DFN3333-8 Kind of package: reel; tape Drain-source voltage: 40V Drain current: 43A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 30W Polarisation: unipolar Gate charge: 13nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 172A Mounting: SMD Case: DFN3333-8 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4548P-AU_R2_002A1 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 172A; 30W; DFN3333-8 Kind of package: reel; tape Drain-source voltage: 40V Drain current: 43A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 30W Polarisation: unipolar Gate charge: 13nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 172A Mounting: SMD Case: DFN3333-8 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4548P-AU_R2_002A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 43A (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4548P-AU_R2_002A1 | Panjit | MOSFETs 40V N-Channel Enhancement Mode MOSFET | auf Bestellung 4947 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4548VP-AU_R2_002A1 | Panjit | MOSFET 40V N-Channel Enhancement Mode MOSFET | auf Bestellung 4974 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4548VP-AU_R2_002A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4548VP-AU_R2_002A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4548VP-AU_R2_002A1 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 30W; DFN3333-8 Kind of package: reel; tape Drain-source voltage: 40V Drain current: 40A On-state resistance: 12.7mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 30W Polarisation: unipolar Gate charge: 9.5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 160A Mounting: SMD Case: DFN3333-8 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4548VP-AU_R2_002A1 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 30W; DFN3333-8 Kind of package: reel; tape Drain-source voltage: 40V Drain current: 40A On-state resistance: 12.7mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 30W Polarisation: unipolar Gate charge: 9.5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 160A Mounting: SMD Case: DFN3333-8 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4564AP-AU_R2_002A1 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4564AP-AU_R2_002A1 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4568AP-AU_R2_002A1 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4568AP-AU_R2_002A1 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4574AP-AU_R2_002A1 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4574AP-AU_R2_002A1 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Cut Tape (CT) | auf Bestellung 4800 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4576AP-AU_R2_002A1 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Cut Tape (CT) | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4576AP-AU_R2_002A1 | PanJit Semiconductor | PJQ4576AP-AU-R2 SMD N channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4576AP-AU_R2_002A1 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Tape & Reel (TR) | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4602-R1-00001 | Panjit | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4602_R1_00001 | Panjit International Inc. | Description: MOSFET N/P-CH 30V 6.4A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 17.8W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 18.5A (Tc), 6.4A (Ta), 18A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 343pF @ 15V, 870pF @ 15V Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V, 31mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 2.5V @ 250µA Supplier Device Package: DFN3030B-8 Part Status: Not For New Designs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4606-R1-00001 | Panjit | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4606_R1_00001 | Panjit International Inc. | Description: MOSFET N/P-CH 30V 7.6A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 18W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 23A (Tc), 6.7A (Ta), 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 429pF @ 25V, 846pF @ 15V Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.8nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3030B-8 Part Status: Not For New Designs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4606_R1_00001 | Panjit | MOSFETs 30V Complementary Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4848P-AU_R2_000A1 | Panjit International Inc. | Description: MOSFET 2N-CH 40V 9A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W (Ta), 39.6W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 37A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333B-8 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 422 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4848P-AU_R2_000A1 | Panjit | MOSFET 40V Dual N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4848P-AU_R2_000A1 | Panjit International Inc. | Description: MOSFET 2N-CH 40V 9A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W (Ta), 39.6W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 37A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333B-8 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4848P_R2_00001 | Panjit International Inc. | Description: 40V DUAL N-CHANNEL ENHANCEMENT M Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 33W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 37A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333B-8 Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4848P_R2_00001 | PanJit Semiconductor | PJQ4848P-R2 Multi channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4848P_R2_00001 | Panjit | MOSFET /4848/TR/13"/HF/5K/DFN3333B-8L/MOS/DFN/NFET-40FQMN//PJ/DFN3333B8L-AS01/PJQ4848P-ASC8/DFN33338L-AS01 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ4848P_R2_00001 | Panjit International Inc. | Description: 40V DUAL N-CHANNEL ENHANCEMENT M Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 33W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 37A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333B-8 Part Status: Active | auf Bestellung 3705 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5410_R2_00001 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5410_R2_00001 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V | auf Bestellung 1522 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5411-R2-00001 | Panjit | MOSFETs DFN5060-8L/MOS/DFN/NFET-30FKMP | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5411_R2_00001 | Panjit | MOSFET 30V P-Channel Enhancement Mode MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5411_R2_00001 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1556 pF @ 15 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5411_R2_00001 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1556 pF @ 15 V | auf Bestellung 8108 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5412-R2-00001 | Panjit | MOSFETs DFN5060 N CHAN 30V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5412_R2_00001 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V | auf Bestellung 2969 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5412_R2_00001 | Panjit | MOSFETs 30V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5412_R2_00001 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5413-R2-00001 | Panjit | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5413_R2_00001 | Panjit | MOSFETs 30V P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5413_R2_00001 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V Power Dissipation (Max): 2W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5419-R2-00001 | Panjit | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5419_R2_00001 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5419_R2_00001 | Panjit | MOSFETs 30V P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5419_R2_00001 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5420_R2_00001 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V Power Dissipation (Max): 2W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5420_R2_00001 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V Power Dissipation (Max): 2W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5423-AU-R2-000A1 | Panjit | MOSFETs DFN5060-8L/MOS/DFN/NFET-30FKMP | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5423-R2-00001 | Panjit | MOSFETs DFN5060-8L/MOS/DFN/NFET-30FKMP | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5423_R2_00001 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3228 pF @ 15 V | auf Bestellung 2943 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5423_R2_00001 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3228 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5424-R2-00001 | Panjit | MOSFETs DFN5060-8L/MOS/DFN/NFET-30FKMN | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5424_R2_00001 | Panjit | MOSFETs 30V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5424_R2_00001 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2238 pF @ 25 V | auf Bestellung 2180 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5424_R2_00001 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2238 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5425_R2_00001 | Panjit | MOSFET 30V P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5427-R2-00001 | Panjit | MOSFETs DFN5060-8L/MOS/DFN/NFET-30FKMP | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5427_R2_00001 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8593 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5427_R2_00001 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8593 pF @ 15 V | auf Bestellung 1070 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5428_R2_00001 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 130A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6771 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5428_R2_00001 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 130A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6771 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5431E-AU_R2_006A1 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 86A (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2598 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5431E-AU_R2_006A1 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 86A (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5431E-AU_R2_006A1 | Panjit | MOSFETs 30V P-Channel Enhancement Mode MOSFET | auf Bestellung 2975 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5433E-AU_R2_006A1 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 75A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2760 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5433E-AU_R2_006A1 | Panjit | MOSFETs 30V P-Channel Enhancement Mode MOSFET | auf Bestellung 2268 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5433E-AU_R2_006A1 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 75A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5433E_R2_00201 | Panjit | MOSFETs 30V P-Channel Standard Trench MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5435E-AU_R2_006A1 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 47A (Tc) Rds On (Max) @ Id, Vgs: 12.1mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2995 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5435E-AU_R2_006A1 | Panjit | MOSFETs 30V P-Channel Enhancement Mode MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5435E-AU_R2_006A1 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 47A (Tc) Rds On (Max) @ Id, Vgs: 12.1mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5435E_R2_00201 | Panjit International Inc. | Description: 30V P-CHANNEL STANDARD TRENCH MO Packaging: Tape & Reel (TR) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5435E_R2_00201 | Panjit | MOSFETs 30V P-Channel Standard Trench MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5435E_R2_00201 | Panjit International Inc. | Description: 30V P-CHANNEL STANDARD TRENCH MO Packaging: Cut Tape (CT) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5437E-AU_R2_006A1 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5437E-AU_R2_006A1 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2970 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5437E-AU_R2_006A1 | Panjit | MOSFETs 30V P-Channel Enhancement Mode MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5437E_R2_00201 | Panjit | MOSFETs 30V P-Channel Standard Trench MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5439E-AU_R2_006A1 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 33A (Tc) Rds On (Max) @ Id, Vgs: 18.8mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1012 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2970 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5439E-AU_R2_006A1 | Panjit | MOSFETs 30V P-Channel Enhancement Mode MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5439E-AU_R2_006A1 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 33A (Tc) Rds On (Max) @ Id, Vgs: 18.8mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1012 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5439E-AU_R2_006A1 | PanJit Semiconductor | PJQ5439E-AU-R2 SMD P channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5439E_R2_00201 | Panjit International Inc. | Description: 30V P-CHANNEL STANDARD TRENCH MO Packaging: Cut Tape (CT) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5439E_R2_00201 | Panjit International Inc. | Description: 30V P-CHANNEL STANDARD TRENCH MO Packaging: Tape & Reel (TR) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5439E_R2_00201 | Panjit | MOSFETs 30V P-Channel Standard Trench MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5440-AU_R2_000A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V Power Dissipation (Max): 2.4W (Ta), 83.3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5214 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4956 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5440-AU_R2_000A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V Power Dissipation (Max): 2.4W (Ta), 83.3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5214 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5440-R2-00001 | Panjit | MOSFET DFN5060-8L/MOS/DFN/NFET-40FKMN | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5440_R2_00001 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 70W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5214 pF @ 25 V | auf Bestellung 2914 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5440_R2_00001 | Panjit | MOSFET 40V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5440_R2_00001 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 70W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5214 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5442-AU_R2_000A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 2.4W (Ta), 99.3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5442-AU_R2_000A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 2.4W (Ta), 99.3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2285 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5442_R2_00001 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5442_R2_00001 | Panjit | MOSFET 40V N-Channel Enhancement Mode MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 171-175 Tag (e) |
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| PJQ5442_R2_00001 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V | auf Bestellung 2100 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5443-AU-R2-000A1 | Panjit | MOSFETs DFN5060-8L/MOS/DFN/NFET-40FKMP | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5443-AU_R2_000A1 | Panjit International Inc. | Description: 40V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5443-AU_R2_000A1 | Panjit International Inc. | Description: 40V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5443-AU_R2_000A1 | Panjit | MOSFET 40V P-Channel Enhancement Mode MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5443-AU_R2_000A1 транзистор Produktcode: 210852
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| Transistoren > Transistoren P-Kanal-Feld | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PJQ5443-R2-00001 | Panjit | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5443_R2_00001 | Panjit International Inc. | Description: 40V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V | auf Bestellung 7854 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5443_R2_00001 | Panjit International Inc. | Description: 40V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5443_R2_00001 | Panjit | MOSFETs 40V P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5444_R2_00001 | Panjit International Inc. | Description: 40V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1759 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5444_R2_00001 | Panjit International Inc. | Description: 40V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1759 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5445-AU-R2-000A1 | Panjit | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5445-R2-00001 | Panjit | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5445_R2_00001 | Panjit International Inc. | Description: 40V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 15A, 10V Power Dissipation (Max): 2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5445_R2_00001 | Panjit | MOSFET 40V P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5446-AU_R2_000A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V Power Dissipation (Max): 2.4W (Ta), 83.3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 7409 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5446-AU_R2_000A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V Power Dissipation (Max): 2.4W (Ta), 83.3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5446_R2_00001 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V Power Dissipation (Max): 2W (Ta), 70W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V | auf Bestellung 2666 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5446_R2_00001 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V Power Dissipation (Max): 2W (Ta), 70W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5448-AU_R2_000A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 2.4W (Ta), 65.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5448-AU_R2_000A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 2.4W (Ta), 65.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 8996 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5448_R2_00001 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 20 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5448_R2_00001 | Panjit | MOSFETs 40V N-Channel Enhancement Mode MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5448_R2_00001 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 20 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5449E-AU_R2_006A1 | Panjit | MOSFETs 40V P-Channel Enhancement Mode MOSFET | auf Bestellung 2695 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5450-AU_R2_000A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V Power Dissipation (Max): 2.4W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2965 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5450-AU_R2_000A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V Power Dissipation (Max): 2.4W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5450-AU_R2_000A1 | Panjit | MOSFETs 40V N-Channel Enhancement Mode MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5450_R2_00001 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V Power Dissipation (Max): 2W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5451E-AU_R2_006A1 | Panjit | MOSFETs 40V P-Channel Enhancement Mode MOSFET | auf Bestellung 2215 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5453-AU-R2-000A1 | Panjit | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5453-R2-00001 | Panjit | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5453E-AU-R2-002A1 | Panjit | MOSFETs DFN5060-8L/MOS/DFN/NFET-40FKMP | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5453E-AU_R2_002A1 | Panjit International Inc. | Description: 40V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), 61A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2858 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5453E-AU_R2_002A1 | Panjit | MOSFETs 40V P-Channel Enhancement Mode MOSFET | auf Bestellung 2935 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5453E-AU_R2_002A1 | Panjit International Inc. | Description: 40V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), 61A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2858 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2963 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5458A-AU_R2_000A1 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M | auf Bestellung 1193 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5458A-AU_R2_000A1 | Panjit | MOSFETs 60V N-Channel Enhancement Mode MOSFET | auf Bestellung 21393 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5458A-AU_R2_000A1 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5458A_R2_00001 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5458A_R2_00001 | Panjit | MOSFETs 60V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5460A_R2_00001 | Panjit | MOSFET 60V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5461A-AU-R2-000A1 | Panjit | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5461A-AU_R2_000A1 | Panjit International Inc. | Description: 60V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 11.5A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 6A, 10V Power Dissipation (Max): 2W (Ta), 26W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5461A-R2-00001 | Panjit | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5461A_R2_00001 | Panjit International Inc. | Description: 60V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 11.5A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 6A, 10V Power Dissipation (Max): 2W (Ta), 26W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5462A-AU_R2_000A1 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Power Dissipation (Max): 2.4W (Ta), 71.4W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5462A-AU_R2_000A1 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Power Dissipation (Max): 2.4W (Ta), 71.4W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5336 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5462A-AU_R2_000A1 | Panjit | MOSFETs 60V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5462A_R2_00001 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 25 V | auf Bestellung 2846 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5462A_R2_00001 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5462A_R2_00001 | Panjit | MOSFETs 60V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5463A-AU-R2-000A1 | Panjit | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5463A-AU_R2_000A1 | Panjit International Inc. | Description: 60V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V Power Dissipation (Max): 2W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5463A-R2-00001 | Panjit | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5463A_R2_00001 | Panjit International Inc. | Description: 60V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V Power Dissipation (Max): 2W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5463A_R2_00001 | Panjit | MOSFET PJ/Q5463A/TR/13"/HF/3K/DFN5060-8L/MOS/DFN/NFET-60FKMP//PJ/DFN50608L-AS55/PJQ5463A-ASV1/DFN50808L-AS01 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5463A_R2_00001 | Panjit International Inc. | Description: 60V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V Power Dissipation (Max): 2W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5464A-R2-00001 | Panjit | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5465A-AU-R2-000A1 | Panjit | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5465A-AU_R2_000A1 | Panjit International Inc. | Description: 60V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5465A-AU_R2_000A1 | Panjit International Inc. | Description: 60V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5465A-R2-00001 | Panjit | MOSFETs DFN5060-8L/MOS/DFN/NFET-60FKMP | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5465A_R2_00001 | Panjit International Inc. | Description: 60V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V | auf Bestellung 4279 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5465A_R2_00001 | Panjit International Inc. | Description: 60V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5466A-AU_R2_000A1 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V Power Dissipation (Max): 2.4W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2866 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5466A-AU_R2_000A1 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V Power Dissipation (Max): 2.4W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5466A1-AU_R2_000A1 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Power Dissipation (Max): 2.4W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5466A1-AU_R2_000A1 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Power Dissipation (Max): 2.4W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4252 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5466A1-AU_R2_000A1 | Panjit | MOSFETs 60V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5466A1-R2-00001 | Panjit | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5466A1_R2_00001 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5466A1_R2_00001 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V | auf Bestellung 1970 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5466A1_R2_00001 | Panjit | MOSFETs 60V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5466A_R2_00001 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V Power Dissipation (Max): 2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V | auf Bestellung 2926 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5466A_R2_00001 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V Power Dissipation (Max): 2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5466A_R2_00001 | Panjit | MOSFET PJ/Q5466A/TR/13"/HF/3K/DFN5060-8L/MOS/DFN/NFET-60FKMN//PJ/DFN50608L-AS30/DFN50608L-AS06/DFN50608L-AS01 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5468A_R2_00001 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V Power Dissipation (Max): 2W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V | auf Bestellung 2946 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5468A_R2_00001 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V Power Dissipation (Max): 2W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5472A_R2_00001 | Panjit | MOSFET 100V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5472A_R2_00001 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 6.5A, 10V Power Dissipation (Max): 2W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5474A_R2_00001 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5474A_R2_00001 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5476AL-AU_R2_000A1 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 3152 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5476AL-AU_R2_000A1 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5476AL_R2_00001 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 25Ohm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V | auf Bestellung 239 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5476AL_R2_00001 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 25Ohm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5494_R2_00001 | Panjit International Inc. | Description: 150V N-CHANNEL ENHANCEMENT MODE | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5494_R2_00001 | Panjit International Inc. | Description: 150V N-CHANNEL ENHANCEMENT MODE | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5494_R2_00001 | Panjit | MOSFET 150V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5520-AU_R2_002A1 | PanJit Semiconductor | PJQ5520-AU-R2 SMD N channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5522-AU_R2_002A1 | PanJit Semiconductor | PJQ5522-AU-R2 SMD N channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5524_R2_00201 | Panjit | MOSFETs 30V N-Channel (LL) SGT MOSFET | auf Bestellung 2996 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5526-AU_R2_002A1 | Panjit | MOSFETs 30V N-Channel (LL) SGT MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5526_R2_00201 | Panjit | MOSFETs 30V N-Channel (LL) SGT MOSFET | auf Bestellung 2996 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5528-AU_R2_002A1 | Panjit | MOSFETs 30V N-Channel (LL) SGT MOSFET | auf Bestellung 2960 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5528-AU_R2_002A1 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 244A; 15.6W Kind of package: reel; tape Drain-source voltage: 30V Drain current: 61A On-state resistance: 6mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 15.6W Polarisation: unipolar Gate charge: 11nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 244A Mounting: SMD Case: DFN5060-8 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5528-AU_R2_002A1 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 244A; 15.6W Kind of package: reel; tape Drain-source voltage: 30V Drain current: 61A On-state resistance: 6mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 15.6W Polarisation: unipolar Gate charge: 11nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 244A Mounting: SMD Case: DFN5060-8 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5528_R2_00201 | Panjit | MOSFETs 30V N-Channel (LL) SGT MOSFET | auf Bestellung 2980 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5530-AU_R2_002A1 | Panjit | MOSFETs 30V N-Channel (LL) SGT MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5530_R2_00201 | Panjit | MOSFETs 30V N-Channel (LL) SGT MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5534-AU-R2-002A1 | Panjit | Array | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5534-AU_R2_002A1 | PanJit Semiconductor | PJQ5534-AU-R2 SMD N channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5534-AU_R2_002A1 | Panjit | MOSFETs 30V N-Channel (LL) SGT MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5534-AU_R2_002A1 | Panjit International Inc. | Description: 30V N-CHANNEL (LL) SGT MOSFET Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5534-AU_R2_002A1 | Panjit International Inc. | Description: 30V N-CHANNEL (LL) SGT MOSFET Packaging: Cut Tape (CT) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5534_R2_00201 | Panjit | MOSFETs 30V N-Channel (LL) SGT MOSFET | auf Bestellung 2997 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5540-AU_R2_002A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 192A (Tc) Rds On (Max) @ Id, Vgs: 1.88mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: DFN5060X-8L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5540-AU_R2_002A1 | Panjit | MOSFETs 40V N-Channel Enhancement Mode MOSFET | auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5540-AU_R2_002A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 192A (Tc) Rds On (Max) @ Id, Vgs: 1.88mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: DFN5060X-8L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5540V-AU_R2_002A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29.7A (Ta), 174A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 115.4W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN5060X-8L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2730 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5540V-AU_R2_002A1 | PanJit Semiconductor | PJQ5540V-AU-R2 SMD N channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5540V-AU_R2_002A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29.7A (Ta), 174A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 115.4W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN5060X-8L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5540V-AU_R2_002A1 | Panjit | MOSFETs 40V N-Channel Enhancement Mode MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5542-AU-R2-002A1 | Panjit | MOSFETs DFN5060-8L/MOS/DFN/NFET-40FKMN | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5542-AU_R2_002A1 | Panjit | MOSFETs 40V N-Channel Enhancement Mode MOSFET | auf Bestellung 2488 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5542-AU_R2_002A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Supplier Device Package: DFN5060-8 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5542-AU_R2_002A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Supplier Device Package: DFN5060-8 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5542V-AU-R2-002A1 | Panjit | MOSFETs DFN5060-8L/MOS/DFN/NFET-40FKMN | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5542V-AU_R2_002A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24.8A (Ta), 136A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5542V-AU_R2_002A1 | PanJit Semiconductor | PJQ5542V-AU-R2 SMD N channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5542V-AU_R2_002A1 | Panjit | MOSFETs 40V N-Channel Enhancement Mode MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5542V-AU_R2_002A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24.8A (Ta), 136A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2980 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5544-AU-R2-002A1 | Panjit | MOSFETs DFN5060-8L/MOS/DFN/NFET-40FKMN | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5544-AU_R2_002A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 130A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2851 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5544-AU_R2_002A1 | Panjit | MOSFETs 40V N-Channel Enhancement Mode MOSFET | auf Bestellung 3652 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5544-AU_R2_002A1 | PanJit Semiconductor | PJQ5544-AU-R2 SMD N channel transistors | auf Bestellung 2965 Stücke: Lieferzeit 7-14 Tag (e) |
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| PJQ5544-AU_R2_002A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 130A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2851 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2240 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5544V-AU_R2_002A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22.7A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2544 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5544V-AU_R2_002A1 | PanJit Semiconductor | PJQ5544V-AU-R2 SMD N channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5544V-AU_R2_002A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22.7A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2544 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5544V-AU_R2_002A1 | Panjit | MOSFETs 40V N-Channel Enhancement Mode MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5546-AU_R2_002A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2170 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5546-AU_R2_002A1 | Panjit | MOSFET 40V N-Channel Enhancement Mode MOSFET | auf Bestellung 2875 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5546-AU_R2_002A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5546-AU_R2_002A1 | PanJit Semiconductor | PJQ5546-AU-R2 SMD N channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5546V-AU_R2_002A1 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 79A Pulsed drain current: 316A Power dissipation: 65W Gate-source voltage: ±20V On-state resistance: 7.3mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5546V-AU_R2_002A1 | Panjit | MOSFETs 40V N-Channel Enhancement Mode MOSFET | auf Bestellung 2780 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5546V-AU_R2_002A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 79A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2975 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5546V-AU_R2_002A1 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 79A Pulsed drain current: 316A Power dissipation: 65W Gate-source voltage: ±20V On-state resistance: 7.3mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5546V-AU_R2_002A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 79A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5548-AU_R2_002A1 | PanJit Semiconductor | PJQ5548-AU-R2 SMD N channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5548-AU_R2_002A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2775 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5548-AU_R2_002A1 | Panjit | MOSFET 40V N-Channel Enhancement Mode MOSFET | auf Bestellung 2690 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5548-AU_R2_002A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5548V-AU_R2_002A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5548V-AU_R2_002A1 | Panjit | MOSFETs 40V N-Channel Enhancement Mode MOSFET | auf Bestellung 2900 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5548V-AU_R2_002A1 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 45A; Idm: 180A; 36W; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 45A Pulsed drain current: 180A Power dissipation: 36W Case: DFN5060-8 Gate-source voltage: ±20V On-state resistance: 12.4mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5548V-AU_R2_002A1 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 45A; Idm: 180A; 36W; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 45A Pulsed drain current: 180A Power dissipation: 36W Case: DFN5060-8 Gate-source voltage: ±20V On-state resistance: 12.4mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5548V-AU_R2_002A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5562A-AU_R2_002A1 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5562A-AU_R2_002A1 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5562A-AU_R2_002A1 | Panjit | MOSFETs 60V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5562A_R2_00201 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5562A_R2_00201 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5562A_R2_00201 | Panjit | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5564A-AU_R2_002A1 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5564A-AU_R2_002A1 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5568A-AU_R2_002A1 | Panjit | MOSFETs 60V N-Channel Enhancement Mode MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5568A-AU_R2_002A1 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5568A-AU_R2_002A1 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5572A-AU_R2_002A1 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Tape & Reel (TR) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5572A-AU_R2_002A1 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Cut Tape (CT) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5574A-AU_R2_002A1 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Tape & Reel (TR) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5574A-AU_R2_002A1 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Cut Tape (CT) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5576A-AU_R2_002A1 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Cut Tape (CT) | auf Bestellung 2800 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5576A-AU_R2_002A1 | PanJit Semiconductor | PJQ5576A-AU-R2 SMD N channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5576A-AU_R2_002A1 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5594-AU_R2_002A1 | Panjit International Inc. | Description: 150V N-CHANNEL ENHANCEMENT MODE Packaging: Cut Tape (CT) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5594-AU_R2_002A1 | Panjit International Inc. | Description: 150V N-CHANNEL ENHANCEMENT MODE Packaging: Tape & Reel (TR) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5594-AU_R2_002A1 | Panjit | MOSFETs 150V N-Channel Enhancement Mode MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5606-R2-00001 | Panjit | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5606_R2_00001 | Panjit International Inc. | Description: MOSFET N/P-CH 30V 7A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta), 21W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 429pF @ 25V, 846pF @ 15V Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.8nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060B-8 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5606_R2_00001 | Panjit International Inc. | Description: MOSFET N/P-CH 30V 7A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta), 21W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 429pF @ 25V, 846pF @ 15V Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.8nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060B-8 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5606_R2_00001 | Panjit | MOSFET PJ/Q5606/TR/13"/HF/3K/DFN5060B-8L/MOS/DFN/NFET-30FKNP//PJ/DFN5060B8L-AS04/PJQ5606-ASN3/DFN50608L-AS01 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5839E-AU_R2_002A1 | Panjit International Inc. | Description: 30V DUAL P-CHANNEL ENHANCEMENT M Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta), 30W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 31A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1012pF @ 25V Rds On (Max) @ Id, Vgs: 19.1mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060B-8 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5839E-AU_R2_002A1 | Panjit | MOSFETs 30V Dual P-Channel Enhancement Mode MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5839E-AU_R2_002A1 | Panjit International Inc. | Description: 30V DUAL P-CHANNEL ENHANCEMENT M Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta), 30W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 31A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1012pF @ 25V Rds On (Max) @ Id, Vgs: 19.1mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060B-8 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2940 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5844-AU_R2_000A1 | Panjit International Inc. | Description: MOSFET 2N-CH 40V 10A/45A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 38.5W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1759pF @ 25V Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060B-8 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5844-AU_R2_000A1 | PanJit Semiconductor | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 28A; Idm: 180A; 19.2W Mounting: SMD Drain-source voltage: 40V Drain current: 28A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET x2 Power dissipation: 19.2W Polarisation: unipolar Case: DFN5060-8 Kind of package: tape Gate charge: 17nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 180A | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5844-AU_R2_000A1 | Panjit International Inc. | Description: MOSFET 2N-CH 40V 10A/45A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 38.5W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1759pF @ 25V Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060B-8 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5844-AU_R2_000A1 | PanJit Semiconductor | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 28A; Idm: 180A; 19.2W Mounting: SMD Drain-source voltage: 40V Drain current: 28A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET x2 Power dissipation: 19.2W Polarisation: unipolar Case: DFN5060-8 Kind of package: tape Gate charge: 17nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 180A Anzahl je Verpackung: 30000 Stücke | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5844_R2_00001 | Panjit International Inc. | Description: MOSFET 2N-CH 40V 10A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta), 32W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1759pF @ 25V Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060B-8 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5844_R2_00001 | Panjit International Inc. | Description: MOSFET 2N-CH 40V 10A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta), 32W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1759pF @ 25V Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060B-8 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5846-AU_R2_000A1 | Panjit | MOSFET 40V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5846_R2_00001 | Panjit | MOSFET 40V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5848_R2_00001 | Panjit | MOSFET PJ/Q5848/TR/13"/HF/3K/DFN5060B-8L/MOS/DFN/NFET-40FKMN//PJ/DFN5060B8L-AS07/PJQ5848-ASP3/DFN50608L-AS01 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5866A-AU_R2_000A1 | Panjit International Inc. | Description: 60V DUAL N-CHANNEL ENHANCEMENT M Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 68.2W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 40A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1574pF @ 25V Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060B-8 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5428 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5866A-AU_R2_000A1 | Panjit International Inc. | Description: 60V DUAL N-CHANNEL ENHANCEMENT M Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 68.2W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 40A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1574pF @ 25V Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060B-8 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5866A_R2_00001 | Panjit International Inc. | Description: 60V DUAL N-CHANNEL ENHANCEMENT M Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta), 56W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 40A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1574pF @ 25V Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060B-8 Part Status: Active | auf Bestellung 2728 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5866A_R2_00001 | Panjit International Inc. | Description: 60V DUAL N-CHANNEL ENHANCEMENT M Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta), 56W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 40A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1574pF @ 25V Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060B-8 Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5948-AU_R2_002A1 | PanJit Semiconductor | PJQ5948-AU-R2 Multi channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5948-AU_R2_002A1 | Panjit International Inc. | Description: MOSFET 2N-CH 40V 10.6A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta), 30W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 37A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 778pF @ 25V Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: DFN5060B-8 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1976 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5948-AU_R2_002A1 | Panjit | MOSFET 40V Dual N-Channel Enhancement Mode MOSFET | auf Bestellung 2900 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5948-AU_R2_002A1 | Panjit International Inc. | Description: MOSFET 2N-CH 40V 10.6A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta), 30W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 37A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 778pF @ 25V Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: DFN5060B-8 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5948V-AU_R2_002A1 | PanJit Semiconductor | PJQ5948V-AU-R2 Multi channel transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJQ5948V-AU_R2_002A1 | Panjit International Inc. | Description: MOSFET 2N-CH 40V 10.5A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W (Ta), 32W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 35A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 673pF @ 25V Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN5060B-8 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5948V-AU_R2_002A1 | Panjit | MOSFETs 40V Dual N-Channel Enhancement Mode MOSFET | auf Bestellung 2984 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5948V-AU_R2_002A1 | Panjit International Inc. | Description: MOSFET 2N-CH 40V 10.5A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W (Ta), 32W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 35A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 673pF @ 25V Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN5060B-8 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5968A-AU_R2_002A1 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5968A-AU_R2_002A1 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQA5V6 | auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| PJQA5V6C | auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| PJQA6V2 | auf Bestellung 81000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| PJQMF05LC | auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| PJQMF05LCT/R | auf Bestellung 90200 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| PJQMF05LCT/R/FA | JIT | auf Bestellung 104000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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