Produkte > SIZ

MOSFET 30V Vds 20/-16V Vgs PowerPAIR 3x3S

auf Bestellung 4999 Stücke:

Lieferzeit 14-28 Tag (e)

SIZ200DT-T1-GE3

Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 61A; Idm: 130A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 130A
Power dissipation: 33W
On-state resistance: 7.7/7.3mΩ
Mounting: SMD
Gate charge: 30/28nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

SIZ200DT-T1-GE3

Description: MOSFET 2N-CH 30V 22A 8POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1600pF @ 15V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V, 30nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)

Produkt ist nicht verfügbar

SIZ200DT-T1-GE3

Trans MOSFET N-CH 30V 22A 8-Pin PowerPAIR EP T/R

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SIZ200DT-T1-GE3

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SIZ200DT-T1-GE3

Description: MOSFET 2N-CH 30V 22A 8POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1600pF @ 15V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V, 30nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)

Produkt ist nicht verfügbar

SIZ240DT-T1-GE3

Description: VISHAY - SIZ240DT-T1-GE3 - Dual-MOSFET, n-Kanal, 40 V, 48 A, 0.00671 ohm, PowerPAIR 3 x 3S, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40
Dauer-Drainstrom Id: 48
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 33
Gate-Source-Schwellenspannung, max.: 2.4
Bauform - Transistor: PowerPAIR 3 x 3S
Anzahl der Pins: 8
Produktpalette: TrenchFET Gen IV
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.00671
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
SVHC: Lead (19-Jan-2021)

Produkt ist nicht verfügbar

SIZ240DT-T1-GE3

SIZ240DT-T1-GE3

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SIZ240DT-T1-GE3

SIZ240DT-T1-GE3 Multi channel transistors

Produkt ist nicht verfügbar

SIZ240DT-T1-GE3

Description: MOSFET DUAL N-CH 40V POWERPAIR 3

Produkt ist nicht verfügbar

SIZ240DT-T1-GE3

MOSFET DUAL N-CHANNEL Symm.PowerPAIR 3 x 3

auf Bestellung 5905 Stücke:

Lieferzeit 14-28 Tag (e)

18+	3.02 EUR
22+	2.47 EUR
100+	1.93 EUR
500+	1.64 EUR
1000+	1.33 EUR
3000+	1.26 EUR
6000+	1.19 EUR

Mindestbestellmenge: 18

SIZ240DT-T1-GE3

Description: VISHAY - SIZ240DT-T1-GE3 - Dual-MOSFET, n-Kanal, 40 V, 48 A, 0.00671 ohm, PowerPAIR 3 x 3S, Oberflächenmontage
SVHC: Lead (19-Jan-2021)

Produkt ist nicht verfügbar

SIZ240DT-T1-GE3

Transistor 2xN-Channel MOSFET; 40V; 20V; 12mOhm/13mOhm; 48A/47A; 33W; -55°C ~ 150°C; SIZ240DT-T1-GE3 TSIZ240dt
Anzahl je Verpackung: 5 Stücke

auf Bestellung 20 Stücke:

Lieferzeit 7-14 Tag (e)

10+	4.38 EUR

Mindestbestellmenge: 10

SIZ240DT-T1-GE3

Description: MOSFET DUAL N-CH 40V POWERPAIR 3

Produkt ist nicht verfügbar

SIZ250DT-T1-GE3

Description: MOSFET DUAL N-CH 60-V POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V, 790pF @ 30V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Part Status: Active

Produkt ist nicht verfügbar

SIZ250DT-T1-GE3

MOSFET DUAL N-CHANNEL 60-V PowerPAIR 3 x 3S

auf Bestellung 34726 Stücke:

Lieferzeit 14-28 Tag (e)

19+	2.81 EUR
23+	2.3 EUR
100+	1.79 EUR
500+	1.51 EUR
1000+	1.23 EUR
3000+	1.16 EUR
6000+	1.15 EUR

Mindestbestellmenge: 19

SIZ250DT-T1-GE3

Description: VISHAY - SIZ250DT-T1-GE3 - Dual-MOSFET, n-Kanal, 60 V, 38 A, 0.01007 ohm, PowerPAIR 3 x 3S, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60
Dauer-Drainstrom Id: 38
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 33
Gate-Source-Schwellenspannung, max.: 2.4
Bauform - Transistor: PowerPAIR 3 x 3S
Anzahl der Pins: 8
Produktpalette: TrenchFET Gen IV
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.01007
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
SVHC: Lead (19-Jan-2021)

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

SIZ250DT-T1-GE3

Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 38A; Idm: 80A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 38A
Pulsed drain current: 80A
Power dissipation: 33W
Gate-source voltage: ±20V
On-state resistance: 18.87/18.11mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke

Produkt ist nicht verfügbar

SIZ250DT-T1-GE3

Description: MOSFET DUAL N-CH 60-V POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V, 790pF @ 30V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Part Status: Active

auf Bestellung 660 Stücke:

Lieferzeit 21-28 Tag (e)

9+	3.15 EUR
10+	2.8 EUR
100+	2.19 EUR
500+	1.81 EUR

Mindestbestellmenge: 9

SIZ250DT-T1-GE3

Produkt ist nicht verfügbar

SIZ250DT-T1-GE3

Trans MOSFET N-CH 60V 14A 8-Pin PowerPAIR EP

Produkt ist nicht verfügbar

SIZ254DT-T1-GE3

Description: DUAL N-CHANNEL 70 V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 70V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 32.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 35V, 765pF @ 35V
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Part Status: Active

auf Bestellung 1030 Stücke:

Lieferzeit 21-28 Tag (e)

9+	3.15 EUR
10+	2.8 EUR
100+	2.19 EUR
500+	1.81 EUR
1000+	1.43 EUR

Mindestbestellmenge: 9

SIZ254DT-T1-GE3

MOSFET DUAL N-CHANNEL 70-V (D-S) S

auf Bestellung 5862 Stücke:

Lieferzeit 14-28 Tag (e)

19+	2.81 EUR
23+	2.3 EUR
100+	1.79 EUR
500+	1.51 EUR
1000+	1.23 EUR
3000+	1.19 EUR
6000+	1.1 EUR

Mindestbestellmenge: 19

SIZ254DT-T1-GE3

Description: VISHAY - SIZ254DT-T1-GE3 - Dual-MOSFET, n-Kanal, 70 V, 70 V, 32.5 A, 32.5 A, 0.0129 ohm
tariffCode: 85412900
Wandlerpolarität: n-Kanal
Betriebstemperatur, max.: 150°C
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0129ohm
Anzahl der Pins: 8Pin(s)
Dauer-Drainstrom Id, p-Kanal: 32.5A
Dauer-Drainstrom Id, n-Kanal: 32.5A
hazardous: false
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Produktpalette: TrenchFET Gen IV Series
Bauform - Transistor: PowerPAIR
Gate-Source-Schwellenspannung, max.: 2.4V
euEccn: NLR
rohsCompliant: YES
Verlustleistung, n-Kanal: 33W
Drain-Source-Spannung Vds: 70V
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 70V
Verlustleistung, p-Kanal: 33W
Drain-Source-Spannung Vds, n-Kanal: 70V
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0129ohm
Dauer-Drainstrom Id: 32.5A
rohsPhthalatesCompliant: YES
Betriebswiderstand, Rds(on): 0.0129ohm
Qualifizierungsstandard der Automobilindustrie: -
usEccn: EAR99
Transistormontage: Oberflächenmontage
Verlustleistung Pd: 33W
SVHC: Lead (19-Jan-2021)

auf Bestellung 12995 Stücke:

Lieferzeit 14-21 Tag (e)

SIZ254DT-T1-GE3

Description: DUAL N-CHANNEL 70 V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 70V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 32.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 35V, 765pF @ 35V
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Part Status: Active

Produkt ist nicht verfügbar

SIZ256DT-T1-GE3

Description: DUAL N-CHANNEL 70 V (D-S) MOSFET

Produkt ist nicht verfügbar

SIZ256DT-T1-GE3
Produktcode: 185540

Transistoren > MOSFET N-CH

Produkt ist nicht verfügbar

SIZ256DT-T1-GE3

Trans MOSFET N-CH 70V 11.5A 8-Pin PowerPAIR EP

Produkt ist nicht verfügbar

SIZ256DT-T1-GE3

MOSFET DUAL N-CHANNEL 70-V (D-S) MOSF

auf Bestellung 2600 Stücke:

Lieferzeit 14-28 Tag (e)

19+	2.81 EUR
23+	2.32 EUR
100+	1.85 EUR
500+	1.6 EUR
1000+	1.34 EUR
3000+	1.26 EUR
6000+	1.21 EUR

Mindestbestellmenge: 19

SIZ256DT-T1-GE3

Description: VISHAY - SIZ256DT-T1-GE3 - Dual-MOSFET, n-Kanal, 70 V, 31.8 A, 0.0137 ohm, PowerPAIR 3 x 3S, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 70
Dauer-Drainstrom Id: 31.8
Rds(on)-Messspannung Vgs: 4.5
Verlustleistung Pd: 33
Bauform - Transistor: PowerPAIR 3 x 3S
Anzahl der Pins: 8
Produktpalette: TrenchFET Gen IV
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.0137
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 1.5
SVHC: Lead (19-Jan-2021)

Produkt ist nicht verfügbar

SIZ256DT-T1-GE3

Description: DUAL N-CHANNEL 70 V (D-S) MOSFET

Produkt ist nicht verfügbar

SIZ256DT-T1-GE3

Trans MOSFET N-CH 70V 11.5A 8-Pin PowerPAIR EP

Produkt ist nicht verfügbar

SIZ256DT-T1-GE3

Produkt ist nicht verfügbar

SIZ256DT-T1-GE3

SIZ256DT-T1-GE3 SMD N channel transistors

Produkt ist nicht verfügbar

SIZ260DT-T1-GE3

Description: MOSFET 2N-CH 80V 8.9A 8PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 40V
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 10A, 10V, 24.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V

auf Bestellung 6631 Stücke:

Lieferzeit 21-28 Tag (e)

10+	2.78 EUR
12+	2.28 EUR
100+	1.77 EUR
500+	1.5 EUR
1000+	1.22 EUR

Mindestbestellmenge: 10

SIZ260DT-T1-GE3

SIZ260DT-T1-GE3 Multi channel transistors

Produkt ist nicht verfügbar

SIZ260DT-T1-GE3

Description: MOSFET 2N-CH 80V 8.9A 8PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 40V
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 10A, 10V, 24.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.15 EUR

Mindestbestellmenge: 3000

SIZ260DT-T1-GE3

Trans MOSFET N-CH 80V 8.9A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZ260DT-T1-GE3

MOSFET DUAL N-CHANNEL 80-V PowerPAIR 3 x 3S

auf Bestellung 2130 Stücke:

Lieferzeit 14-28 Tag (e)

19+	2.78 EUR
23+	2.29 EUR
100+	1.78 EUR
500+	1.51 EUR
1000+	1.23 EUR
3000+	1.16 EUR
6000+	1.15 EUR

Mindestbestellmenge: 19

SIZ270DT-T1-GE3

Description: VISHAY - SIZ270DT-T1-GE3 - Dual-MOSFET, n-Kanal, 100 V, 19.5 A, 0.0302 ohm, PowerPAIR 3 x 3S, Oberflächenmontage
SVHC: Lead (19-Jan-2021)

Produkt ist nicht verfügbar

SIZ270DT-T1-GE3

Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 19.5A; 33W
Drain-source voltage: 100V
Drain current: 19.5A
Polarisation: unipolar
On-state resistance: 54.1/51.7mΩ
Pulsed drain current: 40A
Power dissipation: 33W
Technology: TrenchFET®
Kind of channel: enhanced
Gate charge: 27nC
Gate-source voltage: ±20V
Kind of package: reel; tape
Mounting: SMD
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 3000 Stücke

Produkt ist nicht verfügbar

SIZ270DT-T1-GE3

Produkt ist nicht verfügbar

SIZ270DT-T1-GE3

Description: MOSFET 2N-CH 100V 7.1A 8PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 50V, 845pF @ 50V
Rds On (Max) @ Id, Vgs: 37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)

auf Bestellung 11593 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.25 EUR
10+	2.66 EUR
100+	2.07 EUR
500+	1.75 EUR
1000+	1.43 EUR

Mindestbestellmenge: 8

SIZ270DT-T1-GE3

MOSFET Dual N-Ch 100V(D-S)

auf Bestellung 11077 Stücke:

Lieferzeit 14-28 Tag (e)

19+	2.83 EUR
23+	2.34 EUR
100+	1.9 EUR
500+	1.69 EUR
1000+	1.43 EUR
3000+	1.38 EUR

Mindestbestellmenge: 19

SIZ270DT-T1-GE3

Description: VISHAY - SIZ270DT-T1-GE3 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 19.5 A, 19.5 A, 0.0302 ohm
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 19.5A
Dauer-Drainstrom Id, p-Kanal: 19.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 100V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 19.5A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0302ohm
Verlustleistung Pd: 33W
Gate-Source-Schwellenspannung, max.: 2.4V
Verlustleistung, p-Kanal: 33W
Drain-Source-Spannung Vds, n-Kanal: 100V
euEccn: NLR
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0302ohm
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 33W
Betriebswiderstand, Rds(on): 0.0302ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
SVHC: Lead (19-Jan-2021)

auf Bestellung 14050 Stücke:

Lieferzeit 14-21 Tag (e)

SIZ270DT-T1-GE3

Description: MOSFET 2N-CH 100V 7.1A 8PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 50V, 845pF @ 50V
Rds On (Max) @ Id, Vgs: 37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.35 EUR
6000+	1.28 EUR

Mindestbestellmenge: 3000

SIZ300DT-T1-GE3

MOSFET RECOMMENDED ALT SIZ342DT-T1-GE3

auf Bestellung 2995 Stücke:

Lieferzeit 14-28 Tag (e)

20+	2.6 EUR
34+	1.55 EUR
100+	1.09 EUR
500+	1.02 EUR

Mindestbestellmenge: 20

SIZ300DT-T1-GE3

Trans MOSFET N-CH 30V 9.8A/14.9A 8-Pin PowerPAIR EP T/R

auf Bestellung 2 Stücke:

Lieferzeit 14-21 Tag (e)

SIZ300DT-T1-GE3

Trans MOSFET N-CH 30V 9.8A/14.9A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZ300DT-T1-GE3

Description: MOSFET 2N-CH 30V 11A POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16.7W, 31W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A, 28A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 9.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair®
Part Status: Active

auf Bestellung 13 Stücke:

Lieferzeit 21-28 Tag (e)

9+	2.91 EUR
10+	2.61 EUR

Mindestbestellmenge: 9

SIZ300DT-T1-GE3
Produktcode: 106566

Transistoren > MOSFET N-CH

Produkt ist nicht verfügbar

SIZ300DT-T1-GE3

SIZ300DT-T1-GE3 SMD N channel transistors

Produkt ist nicht verfügbar

SIZ300DT-T1-GE3

Trans MOSFET N-CH 30V 9.8A/14.9A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZ300DT-T1-GE3

Description: MOSFET 2N-CH 30V 11A POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16.7W, 31W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A, 28A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 9.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair®
Part Status: Active

Produkt ist nicht verfügbar

SIZ320DT-T1-GE3

Trans MOSFET N-CH 25V 17.2A/24.8A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZ320DT-T1-GE3

Description: MOSFET 2N-CH 25V 30/40A 8POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16.7W, 31W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 12.5V, 1370pF @ 12.5V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 8A, 10V, 4.24mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V, 11.9nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)

Produkt ist nicht verfügbar

SIZ320DT-T1-GE3

SIZ320DT-T1-GE3 SMD N channel transistors

Produkt ist nicht verfügbar

SIZ320DT-T1-GE3

MOSFET 25V Vds 16V Vgs PowerPAIR 3 x 3

auf Bestellung 3904 Stücke:

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23+	2.32 EUR
26+	2.06 EUR
100+	1.58 EUR
500+	1.25 EUR
1000+	1 EUR
3000+	0.9 EUR

Mindestbestellmenge: 23

SIZ320DT-T1-GE3

Description: MOSFET 2N-CH 25V 30/40A 8POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16.7W, 31W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 12.5V, 1370pF @ 12.5V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 8A, 10V, 4.24mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V, 11.9nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)

auf Bestellung 2900 Stücke:

Lieferzeit 21-28 Tag (e)

11+	2.37 EUR
13+	2.04 EUR
100+	1.41 EUR
500+	1.18 EUR
1000+	1 EUR

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SIZ322DT-T1-GE3

Trans MOSFET N-CH 25V 30A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZ322DT-T1-GE3
Produktcode: 175930

Transistoren > MOSFET N-CH

Produkt ist nicht verfügbar

SIZ322DT-T1-GE3

MOSFET 25V Vds 16V Vgs PowerPAIR 3 x 3

auf Bestellung 431 Stücke:

Lieferzeit 14-28 Tag (e)

25+	2.1 EUR
28+	1.87 EUR
100+	1.27 EUR
500+	1.06 EUR
1000+	0.91 EUR
3000+	0.82 EUR
6000+	0.76 EUR

Mindestbestellmenge: 25

SIZ322DT-T1-GE3

Description: VISHAY - SIZ322DT-T1-GE3 - Dual-MOSFET, n-Kanal, 25 V, 25 V, 30 A, 30 A, 0.00529 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 30A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 25V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 30A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.00529ohm
Verlustleistung, p-Kanal: 16.7W
Drain-Source-Spannung Vds, n-Kanal: 25V
euEccn: NLR
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.00529ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 16.7W
Betriebstemperatur, max.: 150°C

auf Bestellung 5686 Stücke:

Lieferzeit 14-21 Tag (e)

SIZ322DT-T1-GE3

Description: MOSFET 2N-CH 25V 30A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16.7W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 12.5V
Rds On (Max) @ Id, Vgs: 6.35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.8 EUR

Mindestbestellmenge: 3000

SIZ322DT-T1-GE3

Trans MOSFET N-CH 25V 30A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZ322DT-T1-GE3

Trans MOSFET N-CH 25V 30A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZ322DT-T1-GE3

Trans MOSFET N-CH 25V 30A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZ322DT-T1-GE3

auf Bestellung 5686 Stücke:

Lieferzeit 14-21 Tag (e)

SIZ322DT-T1-GE3

Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 25V; 30A; Idm: 100A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 30A
Pulsed drain current: 100A
Power dissipation: 16.7W
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 20.1nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

SIZ322DT-T1-GE3

Produkt ist nicht verfügbar

SIZ322DT-T1-GE3

Description: MOSFET 2N-CH 25V 30A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16.7W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 12.5V
Rds On (Max) @ Id, Vgs: 6.35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active

auf Bestellung 8145 Stücke:

Lieferzeit 21-28 Tag (e)

13+	2.11 EUR
15+	1.83 EUR
100+	1.27 EUR
500+	1.06 EUR
1000+	0.9 EUR

Mindestbestellmenge: 13

SIZ328DT-T1-GE3

Description: MOSFET DUAL N-CHAN 25V POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V, 600pF @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, 11.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active

auf Bestellung 2850 Stücke:

Lieferzeit 21-28 Tag (e)

11+	2.37 EUR
13+	2.05 EUR
100+	1.42 EUR
500+	1.18 EUR
1000+	1.01 EUR

Mindestbestellmenge: 11

SIZ328DT-T1-GE3

Description: MOSFET DUAL N-CHAN 25V POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V, 600pF @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, 11.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active

Produkt ist nicht verfügbar

SIZ328DT-T1-GE3

MOSFET 25V Vds 16V Vgs PowerPAIR 3 x 3

auf Bestellung 5682 Stücke:

Lieferzeit 14-28 Tag (e)

25+	2.13 EUR
28+	1.88 EUR
100+	1.46 EUR
500+	1.17 EUR
1000+	0.94 EUR
3000+	0.89 EUR
6000+	0.83 EUR

Mindestbestellmenge: 25

SIZ340ADT

Trans MOSFET N-CH 30V 15.7A/25.4A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZ340ADT-T1-GE3

Trans MOSFET N-CH 30V 15.7A/25.4A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZ340ADT-T1-GE3

Description: MOSFET 2N-CH 30V 15.7A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc), 25.4A (Ta), 69.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V, 1290pF @ 15V
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V, 4.29mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V, 27.9nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active

auf Bestellung 16485 Stücke:

Lieferzeit 21-28 Tag (e)

11+	2.52 EUR
13+	2.07 EUR
100+	1.61 EUR
500+	1.36 EUR
1000+	1.11 EUR

Mindestbestellmenge: 11

SIZ340ADT-T1-GE3

Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 33.4/69.7A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 33.4/69.7A
Pulsed drain current: 100...150A
Power dissipation: 16.7/31W
On-state resistance: 14.4/6.2mΩ
Mounting: SMD
Gate charge: 27.9/12.2nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

SIZ340ADT-T1-GE3

Trans MOSFET N-CH 30V 15.7A/25.4A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZ340ADT-T1-GE3

Produkt ist nicht verfügbar

SIZ340ADT-T1-GE3

MOSFET DUAL N-CHANNEL 30-V

auf Bestellung 12300 Stücke:

Lieferzeit 14-28 Tag (e)

36+	1.45 EUR
45+	1.18 EUR
100+	1 EUR

Mindestbestellmenge: 36

SIZ340ADT-T1-GE3

Description: VISHAY - SIZ340ADT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 69.7 A, 69.7 A, 0.00357 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 69.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 69.7A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.00357ohm
Verlustleistung, p-Kanal: 31W
euEccn: NLR
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.00357ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 31W
SVHC: Lead (19-Jan-2021)

auf Bestellung 11672 Stücke:

Lieferzeit 14-21 Tag (e)

SIZ340ADT-T1-GE3

Description: MOSFET 2N-CH 30V 15.7A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc), 25.4A (Ta), 69.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V, 1290pF @ 15V
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V, 4.29mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V, 27.9nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active

auf Bestellung 12000 Stücke:

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3000+	1.05 EUR
6000+	1 EUR
9000+	0.95 EUR

Mindestbestellmenge: 3000

SIZ340ADT-T1-GE3

Trans MOSFET N-CH 30V 15.7A/25.4A 8-Pin PowerPAIR EP T/R

auf Bestellung 30 Stücke:

Lieferzeit 14-21 Tag (e)

SIZ340ADT-T1-GE3

Description: VISHAY - SIZ340ADT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 69.7 A, 69.7 A, 0.00357 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 69.7A
Dauer-Drainstrom Id, p-Kanal: 69.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 69.7A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.00357ohm
Verlustleistung, p-Kanal: 31W
euEccn: NLR
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.00357ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 31W
Betriebstemperatur, max.: 150°C
SVHC: Lead (19-Jan-2021)

auf Bestellung 11672 Stücke:

Lieferzeit 14-21 Tag (e)

SIZ340BDT-T1-GE3

Trans MOSFET N-CH 30V 16.9A/25.3A T/R

auf Bestellung 45 Stücke:

Lieferzeit 14-21 Tag (e)

SIZ340BDT-T1-GE3

SIZ340BDT-T1-GE3 SMD N channel transistors

Produkt ist nicht verfügbar

SIZ340BDT-T1-GE3

MOSFET 30V N-CHANNEL DUAL

auf Bestellung 22333 Stücke:

Lieferzeit 14-28 Tag (e)

31+	1.72 EUR
35+	1.5 EUR
100+	1.04 EUR
500+	0.87 EUR
1000+	0.74 EUR
3000+	0.66 EUR
6000+	0.64 EUR

Mindestbestellmenge: 31

SIZ340BDT-T1-GE3

Description: VISHAY - SIZ340BDT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 69.3 A, 69.3 A, 0.00359 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 69.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 69.3A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.00359ohm
Verlustleistung, p-Kanal: 31W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pins
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.00359ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 31W
Betriebstemperatur, max.: 150°C

auf Bestellung 10923 Stücke:

Lieferzeit 14-21 Tag (e)

SIZ340BDT-T1-GE3

Description: MOSFET 2N-CH 30V 16.9A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V
Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active

auf Bestellung 6089 Stücke:

Lieferzeit 21-28 Tag (e)

16+	1.72 EUR
18+	1.49 EUR
100+	1.03 EUR
500+	0.86 EUR
1000+	0.73 EUR

Mindestbestellmenge: 16

SIZ340BDT-T1-GE3

Trans MOSFET N-CH 30V 16.9A/25.3A T/R

Produkt ist nicht verfügbar

SIZ340BDT-T1-GE3

auf Bestellung 10923 Stücke:

Lieferzeit 14-21 Tag (e)

SIZ340BDT-T1-GE3

Description: MOSFET 2N-CH 30V 16.9A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V
Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.65 EUR

Mindestbestellmenge: 3000

SIZ340DT-T1-GE3

Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET

Produkt ist nicht verfügbar

SIZ340DT-T1-GE3

Description: MOSFET 2N-CH 30V 30A/40A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16.7W, 31W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A, 40A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.88 EUR
6000+	0.84 EUR

Mindestbestellmenge: 3000

SIZ340DT-T1-GE3

Trans MOSFET N-CH 30V 15.6A/22.6A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZ340DT-T1-GE3

Description: VISHAY - SIZ340DT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 40 A, 40 A, 0.0042 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 40A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 40A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0042ohm
Verlustleistung, p-Kanal: 31W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0042ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 31W
Betriebstemperatur, max.: 150°C

auf Bestellung 8144 Stücke:

Lieferzeit 14-21 Tag (e)

SIZ340DT-T1-GE3

Description: MOSFET 2N-CH 30V 30A/40A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16.7W, 31W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A, 40A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)

auf Bestellung 9854 Stücke:

Lieferzeit 21-28 Tag (e)

13+	2.13 EUR
15+	1.74 EUR
100+	1.35 EUR
500+	1.15 EUR
1000+	0.94 EUR

Mindestbestellmenge: 13

SIZ340DT-T1-GE3

Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke

Produkt ist nicht verfügbar

SIZ340DT-T1-GE3

MOSFET 30V Vds 20V Vgs PowerPAIR 3 x 3

auf Bestellung 6879 Stücke:

Lieferzeit 14-28 Tag (e)

25+	2.15 EUR
30+	1.75 EUR
100+	1.36 EUR
500+	1.16 EUR
1000+	0.94 EUR
3000+	0.88 EUR
6000+	0.84 EUR

Mindestbestellmenge: 25

SIZ340DT-T1-GE3

Trans MOSFET N-CH 30V 15.6A/22.6A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZ340DT-T1-GE3

Trans MOSFET N-CH 30V 15.6A/22.6A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZ342ADT-T1-GE3

Description: MOSFET 2N-CH 30V 15.7A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)

auf Bestellung 9000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.75 EUR
6000+	0.71 EUR
9000+	0.66 EUR

Mindestbestellmenge: 3000

SIZ342ADT-T1-GE3

Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 33.4A; 16.7W
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 33.4A
Pulsed drain current: 100A
Power dissipation: 16.7W
On-state resistance: 14.4mΩ
Mounting: SMD
Gate charge: 12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke

Produkt ist nicht verfügbar

SIZ342ADT-T1-GE3

MOSFET Dual N-Channel 30V

auf Bestellung 5451 Stücke:

Lieferzeit 14-28 Tag (e)

33+	1.62 EUR
37+	1.44 EUR
100+	1.07 EUR
500+	0.95 EUR
1000+	0.84 EUR
3000+	0.75 EUR
6000+	0.74 EUR

Mindestbestellmenge: 33

SIZ342ADT-T1-GE3

N Channel MOSFET

Produkt ist nicht verfügbar

SIZ342ADT-T1-GE3

Description: VISHAY - SIZ342ADT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 33.4 A, 33.4 A, 0.0078 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 33.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 33.4A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0078ohm
Verlustleistung, p-Kanal: 16.7W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET GEN IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0078ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 16.7W
Betriebstemperatur, max.: 150°C

auf Bestellung 3810 Stücke:

Lieferzeit 14-21 Tag (e)

SIZ342ADT-T1-GE3

Produkt ist nicht verfügbar

SIZ342ADT-T1-GE3

Description: MOSFET 2N-CH 30V 15.7A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)

auf Bestellung 12085 Stücke:

Lieferzeit 21-28 Tag (e)

14+	1.98 EUR
16+	1.71 EUR
100+	1.19 EUR
500+	0.99 EUR
1000+	0.84 EUR

Mindestbestellmenge: 14

SIZ342ADT-T1-GE3

auf Bestellung 3810 Stücke:

Lieferzeit 14-21 Tag (e)

SIZ342BDT-T1-GE3

MOSFET

Produkt ist nicht verfügbar

SIZ342DT-T1-GE3

Trans MOSFET N-CH 30V 15.6A 8-Pin PowerPAIR EP

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

SIZ342DT-T1-GE3

Description: MOSFET 2N-CH 30V 15.7A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.6W, 4.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active

auf Bestellung 18553 Stücke:

Lieferzeit 21-28 Tag (e)

13+	2.13 EUR
15+	1.74 EUR
100+	1.35 EUR
500+	1.15 EUR
1000+	0.94 EUR

Mindestbestellmenge: 13

SIZ342DT-T1-GE3

Description: VISHAY - SIZ342DT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 30 A, 30 A, 0.0084 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 30A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 30A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0084ohm
Verlustleistung, p-Kanal: 16.7W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0084ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 16.7W
Betriebstemperatur, max.: 150°C

auf Bestellung 6142 Stücke:

Lieferzeit 14-21 Tag (e)

SIZ342DT-T1-GE3

Trans MOSFET N-CH 30V 15.6A 8-Pin PowerPAIR EP

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	0.54 EUR
6000+	0.49 EUR

Mindestbestellmenge: 3000

SIZ342DT-T1-GE3

Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 30A; Idm: 100A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 100A
Power dissipation: 16.7W
On-state resistance: 15.3mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

SIZ342DT-T1-GE3

Trans MOSFET N-CH 30V 15.6A 8-Pin PowerPAIR EP

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

6000+	0.54 EUR

Mindestbestellmenge: 6000

SIZ342DT-T1-GE3

Trans MOSFET N-CH 30V 15.6A 8-Pin PowerPAIR EP

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	0.54 EUR
6000+	0.49 EUR

Mindestbestellmenge: 3000

SIZ342DT-T1-GE3

Description: MOSFET 2N-CH 30V 15.7A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.6W, 4.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active

auf Bestellung 18000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.88 EUR
6000+	0.84 EUR
9000+	0.8 EUR

Mindestbestellmenge: 3000

SIZ342DT-T1-GE3

MOSFET 30V Vds 20V Vgs PowerPAIR 3 x 3

auf Bestellung 2570 Stücke:

Lieferzeit 14-28 Tag (e)

25+	2.15 EUR
30+	1.75 EUR
100+	1.36 EUR
500+	1.16 EUR
1000+	0.94 EUR
3000+	0.89 EUR
6000+	0.88 EUR

Mindestbestellmenge: 25

SIZ342DT-T1-GE3

Trans MOSFET N-CH 30V 15.6A 8-Pin PowerPAIR EP

Produkt ist nicht verfügbar

SIZ342DT-T1-GE3

auf Bestellung 6142 Stücke:

Lieferzeit 14-21 Tag (e)

SIZ342DT-T1-GE3

Trans MOSFET N-CH 30V 15.6A 8-Pin PowerPAIR EP

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	0.5 EUR

Mindestbestellmenge: 3000

SIZ342DT-T1-GE3

Produkt ist nicht verfügbar

SIZ342DT-T1-GE3

Trans MOSFET N-CH 30V 15.6A 8-Pin PowerPAIR EP

Produkt ist nicht verfügbar

SIZ346DT-T1-GE3

MOSFET 30V Vds 20V Vgs PowerPAIR 3 x 3

auf Bestellung 4258 Stücke:

Lieferzeit 14-28 Tag (e)

31+	1.69 EUR
36+	1.47 EUR
100+	1.02 EUR
500+	0.85 EUR
1000+	0.72 EUR
3000+	0.64 EUR
6000+	0.63 EUR

Mindestbestellmenge: 31

SIZ346DT-T1-GE3

Description: MOSFET 2N-CH 30V 17A/30A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16W, 16.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)

auf Bestellung 3924 Stücke:

Lieferzeit 21-28 Tag (e)

16+	1.69 EUR
18+	1.46 EUR
100+	1.01 EUR
500+	0.84 EUR
1000+	0.72 EUR

Mindestbestellmenge: 16

SIZ346DT-T1-GE3

SIZ346DT-T1-GE3 Multi channel transistors

Produkt ist nicht verfügbar

SIZ346DT-T1-GE3

Dual N-Channel 30 V (D-S) MOSFETs

Produkt ist nicht verfügbar

SIZ346DT-T1-GE3

Description: MOSFET 2N-CH 30V 17A/30A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16W, 16.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.64 EUR

Mindestbestellmenge: 3000

SIZ348DT-T1-GE3

SIZ348DT-T1-GE3 SMD N channel transistors

Produkt ist nicht verfügbar

SIZ348DT-T1-GE3

Trans MOSFET N-CH 30V 18A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZ348DT-T1-GE3

Trans MOSFET N-CH 30V 18A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZ348DT-T1-GE3

Description: MOSFET 2N-CH 30V 18A/30A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

10+	2.63 EUR
13+	2.14 EUR
100+	1.67 EUR
500+	1.41 EUR
1000+	1.15 EUR

Mindestbestellmenge: 10

SIZ348DT-T1-GE3

Trans MOSFET N-CH 30V 18A 8-Pin PowerPAIR EP T/R

auf Bestellung 1895 Stücke:

Lieferzeit 14-21 Tag (e)

218+	0.72 EUR
220+	0.69 EUR
222+	0.66 EUR
250+	0.62 EUR
500+	0.59 EUR
1000+	0.56 EUR

Mindestbestellmenge: 218

SIZ348DT-T1-GE3

MOSFET 30V Vds 20V Vgs PowerPAIR 3 x 3

auf Bestellung 4761 Stücke:

Lieferzeit 14-28 Tag (e)

24+	2.23 EUR
28+	1.87 EUR
100+	1.51 EUR
500+	1.32 EUR
1000+	1.12 EUR

Mindestbestellmenge: 24

SIZ348DT-T1-GE3

Trans MOSFET N-CH 30V 18A 8-Pin PowerPAIR EP T/R

auf Bestellung 1895 Stücke:

Lieferzeit 14-21 Tag (e)

88+	1.79 EUR
98+	1.54 EUR
99+	1.47 EUR
127+	1.1 EUR
250+	1.04 EUR
500+	0.82 EUR
1000+	0.62 EUR

Mindestbestellmenge: 88

SIZ348DT-T1-GE3

Description: MOSFET 2N-CH 30V 18A/30A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.08 EUR
6000+	1.03 EUR

Mindestbestellmenge: 3000

SIZ348DT-T1-GE3

Trans MOSFET N-CH 30V 18A 8-Pin PowerPAIR EP T/R

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

78+	2.01 EUR
79+	1.92 EUR
100+	1.46 EUR
200+	1.33 EUR
500+	1.09 EUR
1000+	0.82 EUR
2000+	0.74 EUR
6000+	0.69 EUR

Mindestbestellmenge: 78

SIZ350DT-T1-GE3

Description: MOSFET 2N-CH 30V 18.5A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 15V
Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.07 EUR

Mindestbestellmenge: 3000

SIZ350DT-T1-GE3

MOSFET 30V Vds 16V Vgs PowerPAIR 3 x 3

auf Bestellung 6106 Stücke:

Lieferzeit 14-28 Tag (e)

20+	2.63 EUR
25+	2.13 EUR
100+	1.67 EUR
500+	1.42 EUR
1000+	1.16 EUR
3000+	1.1 EUR

Mindestbestellmenge: 20

SIZ350DT-T1-GE3

Description: VISHAY - SIZ350DT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 30 A, 30 A, 0.00563 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 30A
Dauer-Drainstrom Id, p-Kanal: 30A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 30A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.00563ohm
Verlustleistung, p-Kanal: 16.7W
euEccn: NLR
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.00563ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 16.7W
Betriebstemperatur, max.: 150°C
SVHC: Lead (19-Jan-2021)

auf Bestellung 1393 Stücke:

Lieferzeit 14-21 Tag (e)

SIZ350DT-T1-GE3

Description: MOSFET 2N-CH 30V 18.5A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 15V
Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)

auf Bestellung 7529 Stücke:

Lieferzeit 21-28 Tag (e)

10+	2.6 EUR
13+	2.12 EUR
100+	1.65 EUR
500+	1.4 EUR
1000+	1.14 EUR

Mindestbestellmenge: 10

SIZ350DT-T1-GE3

SIZ350DT-T1-GE3 SMD N channel transistors

Produkt ist nicht verfügbar

SIZ350DT-T1-GE3

Trans MOSFET N-CH 30V 18.5A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZ350DT-T1-GE3

Description: VISHAY - SIZ350DT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 30 A, 30 A, 0.00563 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 30A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 30A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.00563ohm
Verlustleistung, p-Kanal: 16.7W
euEccn: NLR
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.00563ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 16.7W
SVHC: Lead (19-Jan-2021)

auf Bestellung 1393 Stücke:

Lieferzeit 14-21 Tag (e)

SIZ700DT-T1-GE3

Description: MOSFET 2N-CH 20V 16A PPAK 1212-8

Produkt ist nicht verfügbar

SIZ700DT-T1-GE3

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

SIZ700DT-T1-GE3

MOSFET RECOMMENDED ALT 781-SIZ710DT-T1-GE3

Produkt ist nicht verfügbar

SIZ702DT-T1-GE3

Description: MOSFET 2N-CH 30V 16A POWERPAIR

Produkt ist nicht verfügbar

SIZ702DT-T1-GE3

MOSFET 30 Volts 16 Amps 27 Watts

auf Bestellung 1480 Stücke:

Lieferzeit 14-28 Tag (e)

SIZ702DT-T1-GE3

Description: MOSFET 2N-CH 30V 16A POWERPAIR

Produkt ist nicht verfügbar

SIZ704DT-T1-GE3

Description: MOSFET 2N-CH 30V 12A 6PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W, 30W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-PowerPair™

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.07 EUR

Mindestbestellmenge: 3000

SIZ704DT-T1-GE3

MOSFET 30V 12/16A 20/30W 24/13.5mohm @ 10V

Produkt ist nicht verfügbar

SIZ704DT-T1-GE3

Trans MOSFET N-CH 30V 9.4A/14A 6-Pin PowerPAIR T/R

Produkt ist nicht verfügbar

SIZ704DT-T1-GE3

SIZ704DT-T1-GE3 SMD N channel transistors

Produkt ist nicht verfügbar

SIZ704DT-T1-GE3

Description: MOSFET 2N-CH 30V 12A 6PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W, 30W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-PowerPair™

auf Bestellung 3077 Stücke:

Lieferzeit 21-28 Tag (e)

11+	2.57 EUR
13+	2.11 EUR
100+	1.64 EUR
500+	1.39 EUR
1000+	1.13 EUR

Mindestbestellmenge: 11

SIZ704DT-T1-GE3

QFN

auf Bestellung 90 Stücke:

Lieferzeit 21-28 Tag (e)

SIZ710DT-T1-GE3

SIZ710DT-T1-GE3 SMD N channel transistors

Produkt ist nicht verfügbar

SIZ710DT-T1-GE3

Description: MOSFET 2N-CH 20V 16A POWERPAIR

auf Bestellung 2861 Stücke:

Lieferzeit 21-28 Tag (e)

SIZ710DT-T1-GE3

MOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7

auf Bestellung 3609 Stücke:

Lieferzeit 14-28 Tag (e)

16+	3.46 EUR
19+	2.86 EUR
100+	2.2 EUR
500+	1.87 EUR
1000+	1.52 EUR
3000+	1.43 EUR
6000+	1.36 EUR

Mindestbestellmenge: 16

SIZ710DT-T1-GE3

Description: MOSFET 2N-CH 20V 16A POWERPAIR

Produkt ist nicht verfügbar

SIZ710DT-T1-GE3

Trans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R

Produkt ist nicht verfügbar

SIZ720DT-T1-GE3

MOSFET N-CHANNEL 20-V (D-S) MOSFET

Produkt ist nicht verfügbar

SIZ720DT-T1-GE3

Description: MOSFET 2N-CH 20V 16A POWERPAIR

Produkt ist nicht verfügbar

SIZ728DT-T1-GE3

MOSFET 25V Vds 20V Vgs PowerPAIR 6 x 3.7

auf Bestellung 3000 Stücke:

Lieferzeit 14-28 Tag (e)

SIZ728DT-T1-GE3

Description: MOSFET 2N-CH 25V 16A 6-POWERPAIR

Produkt ist nicht verfügbar

SIZ730DT-T1-GE3

Description: MOSFET 2N-CH 30V 16A 6-POWERPAIR

auf Bestellung 314 Stücke:

Lieferzeit 21-28 Tag (e)

13+	2.11 EUR
15+	1.74 EUR
100+	1.53 EUR

Mindestbestellmenge: 13

SIZ730DT-T1-GE3

MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 3.7

auf Bestellung 5506 Stücke:

Lieferzeit 14-28 Tag (e)

SIZ730DT-T1-GE3

Description: MOSFET 2N-CH 30V 16A 6-POWERPAIR

Produkt ist nicht verfügbar

SIZ730DT-T1-GE3

Trans MOSFET N-CH 30V 16A/35A 6-Pin PowerPAIR T/R

Produkt ist nicht verfügbar

SIZ790DT-T1-GE3

MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 3.7

auf Bestellung 1782 Stücke:

Lieferzeit 14-28 Tag (e)

SIZ790DT-T1-GE3

Trans MOSFET N-CH 30V 12.9A/23.4A 6-Pin PowerPAIR T/R

Produkt ist nicht verfügbar

SIZ790DT-T1-GE3

Description: MOSFET 2N-CH 30V 16A 6-POWERPAIR

Produkt ist nicht verfügbar

SIZ790DT-T1-GE3

Description: MOSFET 2N-CH 30V 16A 6-POWERPAIR

Produkt ist nicht verfügbar

SIZ900DT-T1-GE3

Description: MOSFET 2N-CH 30V 24A POWERPAIR

auf Bestellung 2900 Stücke:

Lieferzeit 21-28 Tag (e)

SIZ900DT-T1-GE3

Description: MOSFET 2N-CH 30V 24A POWERPAIR

auf Bestellung 2900 Stücke:

Lieferzeit 21-28 Tag (e)

SIZ900DT-T1-GE3

MOSFET 30V 24/28A 48/100W 7.2/3.9mOhms @ 10V

auf Bestellung 3000 Stücke:

Lieferzeit 14-28 Tag (e)

SIZ900DT-T1-GE3

Description: MOSFET 2N-CH 30V 24A POWERPAIR

Produkt ist nicht verfügbar

SIZ902DT-T1-GE3

MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5

auf Bestellung 2734 Stücke:

Lieferzeit 14-28 Tag (e)

16+	3.46 EUR
19+	2.86 EUR
100+	2.2 EUR
500+	1.87 EUR
1000+	1.58 EUR
6000+	1.56 EUR

Mindestbestellmenge: 16

SIZ902DT-T1-GE3

Trans MOSFET N-CH 30V 14.3A/16A 8-Pin PowerPAIR T/R

Produkt ist nicht verfügbar

SIZ902DT-T1-GE3

Description: MOSFET 2N-CH 30V 16A 8POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 29W, 66W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)

Produkt ist nicht verfügbar

SIZ902DT-T1-GE3

Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 16A; 29/66W
Type of transistor: N-MOSFET x2
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 29/66W
On-state resistance: 14.5/8.3mΩ
Polarisation: unipolar
Technology: TrenchFET®
Gate charge: 21/65nC
Drain-source voltage: 30V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50...80A
Drain current: 16A
Anzahl je Verpackung: 3000 Stücke

Produkt ist nicht verfügbar

SIZ902DT-T1-GE3

Description: MOSFET 2N-CH 30V 16A 8POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 29W, 66W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)

auf Bestellung 2922 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.43 EUR
10+	2.82 EUR
100+	2.19 EUR
500+	1.86 EUR
1000+	1.51 EUR

Mindestbestellmenge: 8

SIZ902DT-T1-GE3

Trans MOSFET N-CH 30V 14.3A/16A 8-Pin PowerPAIR T/R

Produkt ist nicht verfügbar

SIZ902DT-T1-GE3

Produkt ist nicht verfügbar

SIZ902DT-T1-GE3

Trans MOSFET N-CH 30V 14.3A/16A 8-Pin PowerPAIR T/R

Produkt ist nicht verfügbar

SIZ904DT-T1-GE3

SIZ904DT-T1-GE3 SMD N channel transistors

Produkt ist nicht verfügbar

SIZ904DT-T1-GE3

Trans MOSFET N-CH 30V 9.5A/14.5A 8-Pin PowerPAIR T/R

Produkt ist nicht verfügbar

SIZ904DT-T1-GE3

Description: MOSFET 2N-CH 30V 12A POWERPAIR

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

SIZ904DT-T1-GE3

MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5

Produkt ist nicht verfügbar

SIZ904DT-T1-GE3

Description: MOSFET 2N-CH 30V 12A POWERPAIR

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

SIZ910DT-T1-GE3

Description: MOSFET 2N-CH 30V 40A POWERPAIR

auf Bestellung 3388 Stücke:

Lieferzeit 21-28 Tag (e)

SIZ910DT-T1-GE3

Description: MOSFET 2N-CH 30V 40A POWERPAIR

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

SIZ910DT-T1-GE3

Description: MOSFET 2N-CH 30V 40A POWERPAIR

auf Bestellung 3388 Stücke:

Lieferzeit 21-28 Tag (e)

SIZ910DT-T1-GE3

Trans MOSFET N-CH 30V 22A/32A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZ914DT-T1-GE3

MOSFET 30V 16/40A 23/100W TrenchFET

auf Bestellung 15000 Stücke:

Lieferzeit 14-28 Tag (e)

SIZ914DT-T1-GE3

Description: MOSFET 2N-CH 30V 16A PWRPAIR

Produkt ist nicht verfügbar

SIZ914DT-T1-GE3

Trans MOSFET N-CH Si 30V 16A/40A 8-Pin PowerPAIR EP

Produkt ist nicht verfügbar

SIZ914DT-T1-GE3

Description: MOSFET 2N-CH 30V 16A PWRPAIR

Produkt ist nicht verfügbar

SIZ916DT-T1-GE3

Description: MOSFET 2N-CH 30V 16A POWERPAIR

Produkt ist nicht verfügbar

SIZ916DT-T1-GE3

Trans MOSFET N-CH 30V 16A/40A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZ916DT-T1-GE3

Description: MOSFET 2N-CH 30V 16A POWERPAIR

Produkt ist nicht verfügbar

SIZ918DT-T1-GE3

MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5

auf Bestellung 4736 Stücke:

Lieferzeit 14-28 Tag (e)

13+	4.03 EUR
15+	3.59 EUR
100+	2.89 EUR
500+	2.41 EUR
1000+	2.04 EUR
3000+	1.92 EUR
6000+	1.88 EUR

Mindestbestellmenge: 13

SIZ918DT-T1-GE3

Description: MOSFET 2N-CH 30V 16A 8PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 29W, 100W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A, 28A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active

auf Bestellung 18000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.77 EUR
6000+	1.71 EUR
9000+	1.65 EUR

Mindestbestellmenge: 3000

SIZ918DT-T1-GE3

Trans MOSFET N-CH 30V 14.3A/26A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZ918DT-T1-GE3

SIZ918DT-T1-GE3 SMD N channel transistors

Produkt ist nicht verfügbar

SIZ918DT-T1-GE3

Description: MOSFET 2N-CH 30V 16A 8PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 29W, 100W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A, 28A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active

auf Bestellung 21962 Stücke:

Lieferzeit 21-28 Tag (e)

7+	3.93 EUR
10+	3.27 EUR
100+	2.6 EUR
500+	2.2 EUR
1000+	1.87 EUR

Mindestbestellmenge: 7

SIZ920DT-T1-GE3

Description: MOSFET 2N-CH 30V 40A 8POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 39W, 100W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 18.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)

Produkt ist nicht verfügbar

SIZ920DT-T1-GE3

Trans MOSFET N-CH 30V 22A/32A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZ920DT-T1-GE3

Description: MOSFET 2N-CH 30V 40A 8POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 39W, 100W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 18.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)

Produkt ist nicht verfügbar

SIZ920DT-T1-GE3
Produktcode: 118521

Transistoren > MOSFET N-CH

Produkt ist nicht verfügbar

SIZ926DT-T1-GE3

Description: MOSFET 2N-CH 25V 40A 8PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20.2W, 40W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V, 2150pF @ 10V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 41nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active

Produkt ist nicht verfügbar

SIZ926DT-T1-GE3

SIZ926DT-T1-GE3 SMD N channel transistors

Produkt ist nicht verfügbar

SIZ926DT-T1-GE3

Trans MOSFET N-CH 25V 22A/37A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZ926DT-T1-GE3

MOSFET 25V Vds 16V Vgs PowerPAIR 6 x 5

auf Bestellung 690 Stücke:

Lieferzeit 14-28 Tag (e)

16+	3.33 EUR
18+	3.02 EUR
100+	2.34 EUR
500+	1.93 EUR

Mindestbestellmenge: 16

SIZ926DT-T1-GE3

Description: MOSFET 2N-CH 25V 40A 8PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20.2W, 40W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V, 2150pF @ 10V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 41nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active

Produkt ist nicht verfügbar

SIZ926DT-T1-GE3

Dual N-Channel 25 V (D-S) MOSFETs

Produkt ist nicht verfügbar

SIZ980BDT-T1-GE3

Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V
Type of transistor: N-MOSFET x2 + Schottky
On-state resistance: 7.12/1.72mΩ
Power dissipation: 20/66W
Polarisation: unipolar
Drain current: 54.8/197A
Kind of package: reel; tape
Drain-source voltage: 30V
Gate charge: 18/79nC
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: 90...130A
Anzahl je Verpackung: 3000 Stücke

Produkt ist nicht verfügbar

SIZ980BDT-T1-GE3

Description: VISHAY - SIZ980BDT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 197 A, 197 A, 817 µohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 197A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 197A
Drain-Source-Durchgangswiderstand, p-Kanal: 817µohm
Verlustleistung, p-Kanal: 66W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pins
Produktpalette: TrenchFET Gen IV SkyFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 817µohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal + Schottky
Verlustleistung, n-Kanal: 66W
Betriebstemperatur, max.: 150°C

auf Bestellung 11856 Stücke:

Lieferzeit 14-21 Tag (e)

SIZ980BDT-T1-GE3

Trans MOSFET N-CH 30V 23.7A/54.3A 8-Pin PowerPAIR EP

Produkt ist nicht verfügbar

SIZ980BDT-T1-GE3

MOSFET N-CHANNEL 30-V (D-S) PowerPAIR 6 x 5

auf Bestellung 15724 Stücke:

Lieferzeit 14-28 Tag (e)

14+	3.85 EUR
17+	3.17 EUR
100+	2.47 EUR
500+	2.08 EUR
1000+	1.7 EUR
3000+	1.62 EUR

Mindestbestellmenge: 14

SIZ980BDT-T1-GE3

Produkt ist nicht verfügbar

SIZ980BDT-T1-GE3

Description: MOSFET 2N-CH 30V 23.7A 8PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 3655pF @ 15V
Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 79nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active

auf Bestellung 13638 Stücke:

Lieferzeit 21-28 Tag (e)

7+	3.77 EUR
10+	3.1 EUR
100+	2.41 EUR
500+	2.04 EUR
1000+	1.67 EUR

Mindestbestellmenge: 7

SIZ980BDT-T1-GE3
Produktcode: 173623

Transistoren > MOSFET N-CH

Produkt ist nicht verfügbar

SIZ980BDT-T1-GE3

Description: VISHAY - SIZ980BDT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 197 A, 197 A, 817 µohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 197A
Dauer-Drainstrom Id, p-Kanal: 197A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 197A
Drain-Source-Durchgangswiderstand, p-Kanal: 817µohm
Verlustleistung, p-Kanal: 66W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pins
Produktpalette: TrenchFET Gen IV SkyFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 817µohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal + Schottky
Verlustleistung, n-Kanal: 66W
Betriebstemperatur, max.: 150°C

auf Bestellung 11856 Stücke:

Lieferzeit 14-21 Tag (e)

SIZ980BDT-T1-GE3

Trans MOSFET N-CH 30V 23.7A/54.3A 8-Pin PowerPAIR EP

Produkt ist nicht verfügbar

SIZ980BDT-T1-GE3

Description: MOSFET 2N-CH 30V 23.7A 8PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 3655pF @ 15V
Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 79nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active

auf Bestellung 9000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.57 EUR
6000+	1.49 EUR
9000+	1.42 EUR

Mindestbestellmenge: 3000

SIZ980DT-T1-GE3

Description: MOSFET 2N-CH 30V 20A 8PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W, 66W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 4600pF @ 15V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 35nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.54 EUR

Mindestbestellmenge: 3000

SIZ980DT-T1-GE3

Trans MOSFET N-CH 30V 20A/60A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZ980DT-T1-GE3

Description: VISHAY - SIZ980DT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 60 A, 0.0011 ohm, PowerPAIR, Oberflächenmontage
SVHC: Lead (19-Jan-2021)

Produkt ist nicht verfügbar

SIZ980DT-T1-GE3

Description: MOSFET 2N-CH 30V 20A 8PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W, 66W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 4600pF @ 15V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 35nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active

auf Bestellung 7163 Stücke:

Lieferzeit 21-28 Tag (e)

7+	3.72 EUR
10+	3.05 EUR
100+	2.37 EUR
500+	2.01 EUR
1000+	1.64 EUR

Mindestbestellmenge: 7

SIZ980DT-T1-GE3

Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V
Type of transistor: N-MOSFET x2 + Schottky
On-state resistance: 10/2.2mΩ
Power dissipation: 20/66W
Polarisation: unipolar
Drain current: 20/60A
Kind of package: reel; tape
Drain-source voltage: 30V
Gate charge: 18/77nC
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: 90...130A
Anzahl je Verpackung: 3000 Stücke

Produkt ist nicht verfügbar

SIZ980DT-T1-GE3

Description: VISHAY - SIZ980DT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 60 A, 0.0011 ohm, PowerPAIR, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30
Dauer-Drainstrom Id: 60
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 66
Gate-Source-Schwellenspannung, max.: 2.2
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8
Produktpalette: TrenchFET
Wandlerpolarität: n-Kanal + Schottky
Betriebswiderstand, Rds(on): 0.0011
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
SVHC: Lead (19-Jan-2021)

Produkt ist nicht verfügbar

SIZ980DT-T1-GE3

Trans MOSFET N-CH 30V 20A/60A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZ980DT-T1-GE3

MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5

auf Bestellung 3242 Stücke:

Lieferzeit 14-28 Tag (e)

14+	3.77 EUR
17+	3.12 EUR
100+	2.41 EUR
500+	2.04 EUR
1000+	1.67 EUR
3000+	1.56 EUR

Mindestbestellmenge: 14

SIZ980DT-T1-GE3

Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V
Type of transistor: N-MOSFET x2 + Schottky
On-state resistance: 10/2.2mΩ
Power dissipation: 20/66W
Polarisation: unipolar
Drain current: 20/60A
Kind of package: reel; tape
Drain-source voltage: 30V
Gate charge: 18/77nC
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: 90...130A

Produkt ist nicht verfügbar

SIZ988DT-T1-GE3

Description: MOSFET 2 N-CH 30V 8-POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20.2W, 40W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 2425pF @ 15V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V, 23.1nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Supplier Device Package: 8-PowerPair®
Part Status: Active

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.41 EUR

Mindestbestellmenge: 3000

SIZ988DT-T1-GE3

MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5

auf Bestellung 4843 Stücke:

Lieferzeit 14-28 Tag (e)

18+	2.96 EUR
22+	2.44 EUR
100+	1.9 EUR
500+	1.61 EUR
1000+	1.31 EUR
3000+	1.23 EUR

Mindestbestellmenge: 18

SIZ988DT-T1-GE3

Description: MOSFET 2 N-CH 30V 8-POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20.2W, 40W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 2425pF @ 15V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V, 23.1nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Supplier Device Package: 8-PowerPair®
Part Status: Active

auf Bestellung 10248 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.33 EUR
10+	2.98 EUR
100+	2.32 EUR
500+	1.92 EUR
1000+	1.52 EUR

Mindestbestellmenge: 8

SIZ998BDT

Trans MOSFET N-CH 30V 23.7A/36.2A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZ998BDT

Produkt ist nicht verfügbar

SIZ998BDT-T1-GE3

Trans MOSFET N-CH 30V 23.7A/36.2A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZ998BDT-T1-GE3

Description: MOSFET 2N-CH 30V 23.7A 8PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 2130pF @ 15V
Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 46.7nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active

auf Bestellung 15000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.92 EUR
6000+	0.88 EUR
9000+	0.84 EUR

Mindestbestellmenge: 3000

SIZ998BDT-T1-GE3

Trans MOSFET N-CH 30V 23.7A/36.2A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZ998BDT-T1-GE3

MOSFET Dual N-Ch 30V(S1-S2)

auf Bestellung 2889 Stücke:

Lieferzeit 14-28 Tag (e)

29+	1.84 EUR
34+	1.55 EUR
100+	1.29 EUR
500+	1.15 EUR
1000+	0.96 EUR
6000+	0.92 EUR

Mindestbestellmenge: 29

SIZ998BDT-T1-GE3

Description: VISHAY - SIZ998BDT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 94.6 A, 94.6 A, 0.0018 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 94.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 94.6A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0018ohm
Verlustleistung, p-Kanal: 32.9W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pins
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0018ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal + Schottky
Verlustleistung, n-Kanal: 32.9W
Betriebstemperatur, max.: 150°C

auf Bestellung 2925 Stücke:

Lieferzeit 14-21 Tag (e)

SIZ998BDT-T1-GE3

auf Bestellung 2925 Stücke:

Lieferzeit 14-21 Tag (e)

SIZ998BDT-T1-GE3

Trans MOSFET N-CH 30V 23.7A/36.2A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZ998BDT-T1-GE3

Description: MOSFET 2N-CH 30V 23.7A 8PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 2130pF @ 15V
Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 46.7nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active

auf Bestellung 17917 Stücke:

Lieferzeit 21-28 Tag (e)

12+	2.21 EUR
15+	1.83 EUR
100+	1.42 EUR
500+	1.2 EUR
1000+	0.98 EUR

Mindestbestellmenge: 12

SIZ998DT-T1-GE3

MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5

auf Bestellung 3538 Stücke:

Lieferzeit 14-28 Tag (e)

15+	3.59 EUR
18+	2.94 EUR
100+	2.28 EUR
500+	1.93 EUR
1000+	1.58 EUR
3000+	1.48 EUR

Mindestbestellmenge: 15

SIZ998DT-T1-GE3

Description: MOSFET 2N-CH 30V 20A 8PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20.2W, 32.9W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 2620pF @ 15V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 19.8nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active

auf Bestellung 12000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.46 EUR
6000+	1.39 EUR
9000+	1.32 EUR

Mindestbestellmenge: 3000

SIZ998DT-T1-GE3

Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V
Type of transistor: N-MOSFET x2 + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20/60A
Pulsed drain current: 90...130A
Power dissipation: 20.2/32.9W
On-state resistance: 10/3.8mΩ
Mounting: SMD
Gate charge: 18/44.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke

Produkt ist nicht verfügbar

SIZ998DT-T1-GE3

Description: VISHAY - SIZ998DT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 60 A, 60 A, 0.0022 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 60A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 60A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0022ohm
Verlustleistung, p-Kanal: 32.9W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0022ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal + Schottky
Verlustleistung, n-Kanal: 32.9W
Betriebstemperatur, max.: 150°C

auf Bestellung 11780 Stücke:

Lieferzeit 14-21 Tag (e)

SIZ998DT-T1-GE3

Description: MOSFET 2N-CH 30V 20A 8PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20.2W, 32.9W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 2620pF @ 15V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 19.8nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active

auf Bestellung 13250 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.51 EUR
10+	2.89 EUR
100+	2.24 EUR
500+	1.9 EUR
1000+	1.55 EUR

Mindestbestellmenge: 8

SIZ998DT-T1-GE3

Produkt ist nicht verfügbar

SIZ998DT-T1-GE3

Trans MOSFET N-CH 30V 20A/60A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZ998DT-T1-GE3

Trans MOSFET N-CH 30V 20A/60A 8-Pin PowerPAIR EP T/R

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

SIZ998DT-T1-GE3

Description: VISHAY - SIZ998DT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 60 A, 60 A, 0.0022 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 60A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 60A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0022ohm
Verlustleistung, p-Kanal: 32.9W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pins
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0022ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal + Schottky
Verlustleistung, n-Kanal: 32.9W
Betriebstemperatur, max.: 150°C

auf Bestellung 11780 Stücke:

Lieferzeit 14-21 Tag (e)

SIZA20

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

SIZA60

auf Bestellung 400 Stücke:

Lieferzeit 21-28 Tag (e)

SIZAL20

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

SIZAL20/L291

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

SIZAS4

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

SIZB

SHINDENGEN

auf Bestellung 2200 Stücke:

Lieferzeit 21-28 Tag (e)

SIZB20

auf Bestellung 500 Stücke:

Lieferzeit 21-28 Tag (e)

SIZB20/Z27N

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

SIZB40

auf Bestellung 8500 Stücke:

Lieferzeit 21-28 Tag (e)

SIZB4072

auf Bestellung 344 Stücke:

Lieferzeit 21-28 Tag (e)

SIZB60

auf Bestellung 400 Stücke:

Lieferzeit 21-28 Tag (e)

SIZB60-7072

auf Bestellung 2774 Stücke:

Lieferzeit 21-28 Tag (e)

SIZE 5 COAX PC TERM BKW

ITT

SIZE 5 COAX PC TERM BKW

auf Bestellung 6 Stücke:

Lieferzeit 14-21 Tag (e)

1+	786.17 EUR
2+	751.61 EUR
3+	696.74 EUR
5+	648.87 EUR

SIZF300DT-T1-GE3

Trans MOSFET N-CH 30V 23A/34A 6-Pin PowerPAIR T/R

Produkt ist nicht verfügbar

SIZF300DT-T1-GE3

Description: MOSFET 2N-CH 30V 23A 8POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active

Produkt ist nicht verfügbar

SIZF300DT-T1-GE3

Transistor N-Channel MOSFET; 30V; 75A; 4,5mOhm; 20V; 75W; -55°C ~ 150°C; SIZF300DT-T1-GE3 SIZF300DT TSIZF300dt
Anzahl je Verpackung: 10 Stücke

auf Bestellung 100 Stücke:

Lieferzeit 7-14 Tag (e)

20+	2.38 EUR

Mindestbestellmenge: 20

SIZF300DT-T1-GE3

MOSFET 30V Vds; 16/-12V Vgs PowerPAIR F 3.3x3.3

auf Bestellung 970 Stücke:

Lieferzeit 14-28 Tag (e)

17+	3.12 EUR
19+	2.81 EUR
100+	2.18 EUR
500+	1.81 EUR

Mindestbestellmenge: 17

SIZF300DT-T1-GE3

Description: MOSFET 2N-CH 30V 23A 8POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active

auf Bestellung 2840 Stücke:

Lieferzeit 21-28 Tag (e)

10+	2.89 EUR
12+	2.36 EUR
100+	1.84 EUR
500+	1.56 EUR
1000+	1.27 EUR

Mindestbestellmenge: 10

SIZF300DT-T1-GE3

SIZF300DT-T1-GE3 Multi channel transistors

Produkt ist nicht verfügbar

SIZF360DT-T1-GE3

MOSFET 30-V W/SCHOTTKY PowerPAIR 3 x 3FDC

auf Bestellung 5936 Stücke:

Lieferzeit 14-28 Tag (e)

13+	4.26 EUR
15+	3.59 EUR
100+	3.12 EUR
250+	3.04 EUR

Mindestbestellmenge: 13

SIZF360DT-T1-GE3

Description: MOSFET DL N-CH 30V PPAIR 3X3FDC
Packaging: Cut Tape (CT)
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-PowerPair™
Part Status: Active

auf Bestellung 6 Stücke:

Lieferzeit 21-28 Tag (e)

SIZF360DT-T1-GE3

N Channel MOSFET

Produkt ist nicht verfügbar

SIZF360DT-T1-GE3

Description: MOSFET DL N-CH 30V PPAIR 3X3FDC
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-PowerPair™
Part Status: Active

Produkt ist nicht verfügbar

SIZF4800LDT-T1-GE3

Description: MOSFET 2N-CH 80V 10A PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W (Ta), 56.8W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 40V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAIR® 3x3FS

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.68 EUR
6000+	1.62 EUR

Mindestbestellmenge: 3000

SIZF4800LDT-T1-GE3

Description: MOSFET 2N-CH 80V 10A PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 12-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W (Ta), 56.8W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 40V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAIR® 3x3FS

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

7+	3.72 EUR
10+	3.1 EUR
100+	2.47 EUR
500+	2.09 EUR
1000+	1.77 EUR

Mindestbestellmenge: 7

SIZF4800LDT-T1-GE3

MOSFET N-CHANNEL 30 V PWRPAIR3X3FS

auf Bestellung 2847 Stücke:

Lieferzeit 14-28 Tag (e)

14+	3.77 EUR
17+	3.15 EUR
100+	2.49 EUR
3000+	2.1 EUR

Mindestbestellmenge: 14

SIZF5300DT-T1-GE3

Description: MOSFET 2N-CH 30V 35A PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W (Ta), 56.8W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 125A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 15V
Rds On (Max) @ Id, Vgs: 2.43mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAIR® 3x3FS
Part Status: Active

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	2.15 EUR

Mindestbestellmenge: 3000

SIZF5300DT-T1-GE3

MOSFET N-CHANNEL 30 V MOSFET PWRPAK

auf Bestellung 9936 Stücke:

Lieferzeit 14-28 Tag (e)

11+	4.81 EUR
13+	4 EUR
100+	3.2 EUR
250+	3.17 EUR
3000+	2.68 EUR

Mindestbestellmenge: 11

SIZF5300DT-T1-GE3

Description: MOSFET 2N-CH 30V 35A PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 12-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W (Ta), 56.8W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 125A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 15V
Rds On (Max) @ Id, Vgs: 2.43mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAIR® 3x3FS
Part Status: Active

auf Bestellung 5314 Stücke:

Lieferzeit 21-28 Tag (e)

6+	4.78 EUR
10+	3.96 EUR
100+	3.15 EUR
500+	2.67 EUR
1000+	2.26 EUR

Mindestbestellmenge: 6

SIZF5302DT-T1-RE3

Description: VISHAY - SIZF5302DT-T1-RE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 100 A, 100 A, 0.0027 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 100A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0027ohm
Verlustleistung, p-Kanal: 48.1W
euEccn: NLR
Bauform - Transistor: PowerPAIR
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0027ohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 48.1W

auf Bestellung 14725 Stücke:

Lieferzeit 14-21 Tag (e)

SIZF5302DT-T1-RE3

Description: MOSFET 2N-CH 30V 28.1A PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 12-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 48.1W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAIR® 3x3FS
Part Status: Active

auf Bestellung 5096 Stücke:

Lieferzeit 21-28 Tag (e)

7+	4.03 EUR
10+	3.36 EUR
100+	2.67 EUR
500+	2.26 EUR
1000+	1.92 EUR

Mindestbestellmenge: 7

SIZF5302DT-T1-RE3

MOSFET P-CHANNEL 30 V MOSFET PWRPAK

auf Bestellung 10599 Stücke:

Lieferzeit 14-28 Tag (e)

13+	4.08 EUR
16+	3.38 EUR
100+	2.7 EUR
250+	2.68 EUR
3000+	2.27 EUR

Mindestbestellmenge: 13

SIZF5302DT-T1-RE3

Description: VISHAY - SIZF5302DT-T1-RE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 100 A, 100 A, 0.0027 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 100A
Dauer-Drainstrom Id, p-Kanal: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 100A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0027ohm
Verlustleistung, p-Kanal: 48.1W
euEccn: NLR
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 12Pin(s)
Produktpalette: TrenchFET Gen V Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0027ohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 48.1W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (17-Jan-2022)

auf Bestellung 14725 Stücke:

Lieferzeit 14-21 Tag (e)

SIZF5302DT-T1-RE3

Description: MOSFET 2N-CH 30V 28.1A PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 48.1W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAIR® 3x3FS
Part Status: Active

Produkt ist nicht verfügbar

SIZF5302DT-T1-RE3-X

Produkt ist nicht verfügbar

SIZF640DT-T1-GE3

MOSFET

auf Bestellung 12050 Stücke:

Lieferzeit 14-28 Tag (e)

SIZF906ADT-T1-GE3

SIZF906ADT-T1-GE3 Multi channel transistors

Produkt ist nicht verfügbar

SIZF906ADT-T1-GE3

Description: MOSFET 2N-CH 30V 27A 8POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 200nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)

Produkt ist nicht verfügbar

SIZF906ADT-T1-GE3

Trans MOSFET N-CH 30V 27A/52A 8-Pin PowerPAIR EP T/R

auf Bestellung 5805 Stücke:

Lieferzeit 14-21 Tag (e)

152+	1.03 EUR
155+	0.98 EUR
157+	0.93 EUR
250+	0.88 EUR
500+	0.83 EUR
1000+	0.78 EUR
3000+	0.73 EUR

Mindestbestellmenge: 152

SIZF906ADT-T1-GE3

Trans MOSFET N-CH 30V 27A/52A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZF906ADT-T1-GE3

Description: MOSFET 2N-CH 30V 27A 8POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 200nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)

Produkt ist nicht verfügbar

SIZF906ADT-T1-GE3

Trans MOSFET N-CH 30V 27A/52A 8-Pin PowerPAIR EP T/R

auf Bestellung 5805 Stücke:

Lieferzeit 14-21 Tag (e)

150+	1.04 EUR
152+	0.99 EUR
155+	0.94 EUR
157+	0.89 EUR
250+	0.84 EUR
500+	0.79 EUR
1000+	0.75 EUR
3000+	0.73 EUR

Mindestbestellmenge: 150

SIZF906ADT-T1-GE3

MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5F

auf Bestellung 5804 Stücke:

Lieferzeit 14-28 Tag (e)

20+	2.68 EUR
22+	2.46 EUR
100+	2.05 EUR
500+	1.81 EUR
1000+	1.57 EUR
3000+	1.52 EUR

Mindestbestellmenge: 20

SIZF906BDT-T1-GE3

Trans MOSFET N-CH 30V 36A/63A 8-Pin PowerPAIR EP T/R

auf Bestellung 2010 Stücke:

Lieferzeit 14-21 Tag (e)

149+	1.05 EUR
150+	0.97 EUR
156+	0.9 EUR
250+	0.86 EUR
500+	0.8 EUR
1000+	0.75 EUR

Mindestbestellmenge: 149

SIZF906BDT-T1-GE3

Description: MOSFET 2N-CH 30V 36A 8PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 15V, 5550pF @ 15V
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 165nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)

auf Bestellung 28356 Stücke:

Lieferzeit 21-28 Tag (e)

6+	4.6 EUR
10+	3.84 EUR
100+	3.05 EUR
500+	2.58 EUR
1000+	2.19 EUR

Mindestbestellmenge: 6

SIZF906BDT-T1-GE3

MOSFET DUAL N-CH 30-V (D-S) W/SCHOTT

auf Bestellung 23778 Stücke:

Lieferzeit 14-28 Tag (e)

13+	4.32 EUR
15+	3.64 EUR
100+	2.94 EUR
250+	2.83 EUR
500+	2.51 EUR
1000+	2.16 EUR
3000+	2.12 EUR

Mindestbestellmenge: 13

SIZF906BDT-T1-GE3

Trans MOSFET N-CH 30V 36A/63A 8-Pin PowerPAIR EP T/R

auf Bestellung 2010 Stücke:

Lieferzeit 14-21 Tag (e)

146+	1.08 EUR
149+	1.01 EUR
150+	0.93 EUR
156+	0.86 EUR
250+	0.82 EUR
500+	0.77 EUR
1000+	0.75 EUR

Mindestbestellmenge: 146

SIZF906BDT-T1-GE3

Description: VISHAY - SIZF906BDT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 257 A, 257 A, 0.00045 ohm
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 257A
Dauer-Drainstrom Id, p-Kanal: 257A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 257A
Drain-Source-Durchgangswiderstand, p-Kanal: 450µohm
Verlustleistung Pd: 83W
Gate-Source-Schwellenspannung, max.: 2.2V
Verlustleistung, p-Kanal: 83W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: PowerPAIR
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 450µohm
productTraceability: No
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 83W
Betriebswiderstand, Rds(on): 450µohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
SVHC: Lead (19-Jan-2021)

auf Bestellung 5 Stücke:

Lieferzeit 14-21 Tag (e)

SIZF906BDT-T1-GE3

Description: MOSFET 2N-CH 30V 36A 8PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 15V, 5550pF @ 15V
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 165nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)

auf Bestellung 27000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	2.08 EUR
6000+	2 EUR
9000+	1.94 EUR

Mindestbestellmenge: 3000

SIZF906DT-T1-GE3
Produktcode: 186042

Transistoren > MOSFET N-CH

Produkt ist nicht verfügbar

SIZF906DT-T1-GE3

Trans MOSFET N-CH 30V 27A/52A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SiZF906DT-T1-GE3

Description: MOSFET 2N-CH 30V 60A 8POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TA)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W (Tc), 83W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V, 92nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active

auf Bestellung 9000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.58 EUR
6000+	1.5 EUR
9000+	1.43 EUR

Mindestbestellmenge: 3000

SiZF906DT-T1-GE3

MOSFET 30V Vds 20V Vgs PowerPAIR F 6 x 5

auf Bestellung 8964 Stücke:

Lieferzeit 14-28 Tag (e)

14+	3.87 EUR
17+	3.2 EUR
100+	2.49 EUR
500+	2.1 EUR
1000+	2.03 EUR

Mindestbestellmenge: 14

SIZF906DT-T1-GE3

Trans MOSFET N-CH 30V 27A/52A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SiZF906DT-T1-GE3

Description: MOSFET 2N-CH 30V 60A 8POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TA)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W (Tc), 83W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V, 92nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active

auf Bestellung 16133 Stücke:

Lieferzeit 21-28 Tag (e)

7+	3.82 EUR
10+	3.12 EUR
100+	2.43 EUR
500+	2.06 EUR
1000+	1.68 EUR

Mindestbestellmenge: 7

SiZF906DT-T1-GE3

SIZF906DT-T1-GE3 Multi channel transistors

Produkt ist nicht verfügbar

SIZF914DT-T1-GE3

Description: DUAL N-CH 25-V (D-S) MOSFET W/SC

Produkt ist nicht verfügbar

SIZF914DT-T1-GE3

SIZF914DT-T1-GE3 Multi channel transistors

Produkt ist nicht verfügbar

SIZF914DT-T1-GE3

Dual N-Channel 25 V (D-S) MOSFET with Schottky Diode

Produkt ist nicht verfügbar

SIZF914DT-T1-GE3

MOSFET 25V Vds 20V Vgs PowerPAIR 6 x 5F

Produkt ist nicht verfügbar

SIZF916DT-T1-GE3

Trans MOSFET N-CH 30V 23A/45A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZF916DT-T1-GE3

Description: VISHAY - SIZF916DT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 60 A, 900 µohm, PowerPAIR, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30
Dauer-Drainstrom Id: 60
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 60
Gate-Source-Schwellenspannung, max.: 2.2
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8
Produktpalette: TrenchFET Gen IV, SkyFET
Wandlerpolarität: n-Kanal + Schottky
Betriebswiderstand, Rds(on): 900
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
SVHC: Lead (19-Jan-2021)

Produkt ist nicht verfügbar

SIZF916DT-T1-GE3

MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5F

Produkt ist nicht verfügbar

SIZF916DT-T1-GE3

Description: MOSFET N-CH DUAL 30V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V, 4320pF @ 15V
Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 95nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active

auf Bestellung 922 Stücke:

Lieferzeit 21-28 Tag (e)

7+	4.26 EUR
10+	3.81 EUR
100+	2.97 EUR
500+	2.45 EUR

Mindestbestellmenge: 7

SIZF916DT-T1-GE3

Description: MOSFET N-CH DUAL 30V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V, 4320pF @ 15V
Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 95nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active

Produkt ist nicht verfügbar

SIZF916DT-T1-GE3

SIZF916DT-T1-GE3 Multi channel transistors

Produkt ist nicht verfügbar

SIZF918DT-T1-GE3

Description: MOSFET DUAL N-CH 30V POWERPAIR 6

Produkt ist nicht verfügbar

SIZF918DT-T1-GE3

SIZF918DT-T1-GE3 Multi channel transistors

Produkt ist nicht verfügbar

SIZF918DT-T1-GE3

Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode

Produkt ist nicht verfügbar

SIZF918DT-T1-GE3

Description: VISHAY - SIZF918DT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 60 A, 0.0012 ohm, PowerPAIR, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30
Dauer-Drainstrom Id: 60
Rds(on)-Messspannung Vgs: 10
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 50
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8
Produktpalette: TrenchFET Gen IV, SkyFET
Wandlerpolarität: n-Kanal + Schottky
Betriebswiderstand, Rds(on): 0.0012
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 2.2
SVHC: Lead (19-Jan-2021)

auf Bestellung 5957 Stücke:

Lieferzeit 14-21 Tag (e)

SIZF918DT-T1-GE3

MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5F

auf Bestellung 7305 Stücke:

Lieferzeit 14-28 Tag (e)

15+	3.69 EUR
18+	3.04 EUR
100+	2.36 EUR
500+	2 EUR
1000+	1.63 EUR
3000+	1.55 EUR

Mindestbestellmenge: 15

SIZF920DT-T1-GE3

Description: MOSFET DL N-CH 30V POWERPAIR 6X5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 5230pF @ 15V
Rds On (Max) @ Id, Vgs: 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 125nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active

auf Bestellung 2211 Stücke:

Lieferzeit 21-28 Tag (e)

6+	4.94 EUR
10+	4.43 EUR
100+	3.56 EUR
500+	2.92 EUR
1000+	2.42 EUR

Mindestbestellmenge: 6

SIZF920DT-T1-GE3

Trans MOSFET N-CH 30V 28A/49A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZF920DT-T1-GE3

Trans MOSFET N-CH 30V 28A/49A 8-Pin PowerPAIR EP T/R

Produkt ist nicht verfügbar

SIZF920DT-T1-GE3

MOSFET Dual 30V Vds PowerPAIR 6x5F

auf Bestellung 11386 Stücke:

Lieferzeit 14-28 Tag (e)

11+	5.15 EUR
12+	4.65 EUR
25+	4.39 EUR
100+	3.74 EUR

Mindestbestellmenge: 11

SIZF920DT-T1-GE3

Description: MOSFET DL N-CH 30V POWERPAIR 6X5
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 5230pF @ 15V
Rds On (Max) @ Id, Vgs: 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 125nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active

Produkt ist nicht verfügbar

SIZF920DT-T1-GE3

Trans MOSFET N-CH 30V 28A/49A 8-Pin PowerPAIR EP T/R

auf Bestellung 11890 Stücke:

Lieferzeit 14-21 Tag (e)

74+	2.12 EUR
82+	1.85 EUR
84+	1.73 EUR
100+	1.44 EUR
250+	1.37 EUR
500+	1.19 EUR
1000+	1.01 EUR
3000+	0.97 EUR
6000+	0.96 EUR

Mindestbestellmenge: 74

SIZF928DT-T1-GE3

MOSFET DUAL N-CHANNEL 30-V (D-S)

auf Bestellung 2890 Stücke:

Lieferzeit 14-28 Tag (e)

15+	3.64 EUR
18+	3.04 EUR
100+	2.47 EUR
250+	2.44 EUR
500+	2.13 EUR
1000+	1.83 EUR
3000+	1.73 EUR

Mindestbestellmenge: 15

SIZF928DT-T1-GE3

Description: MOSFET 2N-CH 30V 33A 8PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 88A (Tc), 61A (Ta), 248A (Tc)
Rds On (Max) @ Id, Vgs: 2.45mOhm @ 10A, 10V, 0.75mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active

auf Bestellung 6064 Stücke:

Lieferzeit 21-28 Tag (e)

7+	3.82 EUR
10+	3.17 EUR
100+	2.52 EUR
500+	2.13 EUR
1000+	1.81 EUR

Mindestbestellmenge: 7

SIZF928DT-T1-GE3