Produkte > DI0
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DI00002 | RAPESCO | Description: RAPESCO - DI00002 - Klebebandabroller, stoßfester Kunststoff, für Klebebänder mit den Abmessungen 50mm x 66mm tariffCode: 39269097 productTraceability: No Spendertyp: Band rohsCompliant: NA Länge: - euEccn: NLR hazardous: false rohsPhthalatesCompliant: NA usEccn: EAR99 Produktpalette: - SVHC: No SVHC (14-Jun-2023) | auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI001N65PTK | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 N 650V Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V Power Dissipation (Max): 31.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 350 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI001N65PTK | Diotec Semiconductor | MOSFETs PowerQFN 3x3, N, 650V, 1A, 1.6?, 150C | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI001N65PTK-AQ | Diotec Semiconductor | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI001N65PTK-AQ | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 N 650V Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V Power Dissipation (Max): 31.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 350 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI002N10PWK | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 2W; QFN2X2; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2A Pulsed drain current: 8A Power dissipation: 2W Case: QFN2X2 Gate-source voltage: ±20V On-state resistance: 0.26Ω Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI002N10PWK-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 2W; QFN2X2; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2A Pulsed drain current: 8A Power dissipation: 2W Case: QFN2X2 Gate-source voltage: ±20V On-state resistance: 0.26Ω Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Version: ESD | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI003N03SQ2 | Diotec Semiconductor | Description: MOSFET SO-8 N 30V 0.05OHM 150C Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Power - Max: 1.6W Current - Continuous Drain (Id) @ 25°C: 3A Supplier Device Package: 8-SO | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI003N03SQ2 | DIOTEC | Description: DIOTEC - DI003N03SQ2 - Dual-MOSFET, Zweifach n-Kanal, 30 V, 3 A, 0.05 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 3A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.05ohm productTraceability: No Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI003N03SQ2 | Diotec Semiconductor | MOSFETs MOSFET, SO-8, 30V, 3A, 150C, N | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI003N03SQ2 | Diotec Semiconductor | Description: MOSFET SO-8 N 30V 0.05OHM 150C Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Power - Max: 1.6W Current - Continuous Drain (Id) @ 25°C: 3A Supplier Device Package: 8-SO | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI004N06PWK | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 16A; 1.65W; QFN2X2 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4A Pulsed drain current: 16A Power dissipation: 1.65W Case: QFN2X2 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI004N06PWK-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 16A; 1.65W; QFN2X2 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4A Pulsed drain current: 16A Power dissipation: 1.65W Case: QFN2X2 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI005N03PW-AQ | Diotec Semiconductor | Description: MOSFET POWERQFN 2X2 30V 0.02OHM Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 6-QFN (2x2) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 3430 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI005N03PW-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 2x2, 30V, 5A, 150C, N, AEC-Q101 | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI005N03PW-AQ | Diotec Semiconductor | Description: MOSFET POWERQFN 2X2 30V 0.02OHM Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 6-QFN (2x2) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI005N06SQ2 | DIOTEC | Description: DIOTEC - DI005N06SQ2 - Dual-MOSFET, Zweifach n-Kanal, 60 V, 5 A, 0.04 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 5A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.04ohm productTraceability: No Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 1.7W Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI005N06SQ2 | Diotec Semiconductor | Description: IC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 25V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI005N06SQ2 | DIOTEC SEMICONDUCTOR | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; Idm: 30A; 1.3W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.1A Pulsed drain current: 30A Power dissipation: 1.3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI005N06SQ2 | Diotec Semiconductor | Dual N-Channel Power MOSFET N-Kanal Leistungs-Doppel-MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI005N06SQ2 | Diotec Semiconductor | MOSFETs MOSFET, SO-8, 60V, 5A, 150C, N | auf Bestellung 2172 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI006H03SQ | Diotec Semiconductor | Description: MOSFET 2N/2P-CH 30V 6A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 631pF @ 15V Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V, 11.4nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI006H03SQ | DIOTEC SEMICONDUCTOR | Category: Multi channel transistors Description: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 4.8/-3.3A; 1.5W; SO8 Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 4.8/-3.3A Power dissipation: 1.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 40/80mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: MOSFET H-Bridge Pulsed drain current: 60...-30A Gate charge: 11.7/11.4nC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI006H03SQ | Diotec Semiconductor | MOSFET MOSFET, SO-8, 30V, 6A, 150C, N+P | auf Bestellung 3975 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI006H03SQ | Diotec Semiconductor | Description: MOSFET 2N/2P-CH 30V 6A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 631pF @ 15V Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V, 11.4nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3999 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI006N06PW-AQ | DIOTEC SEMICONDUCTOR | DI006N06PW-AQ-DIO SMD N channel transistors | auf Bestellung 3885 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||||
| DI006N06PW-AQ | Diotec Semiconductor | DI006N06PW-AQ | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI006P02PW | Diotec Semiconductor | Description: MOSFET POWERQFN 2X2 P -20V -6A 0 Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 4.5V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-QFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1242 pF @ 10 V | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI006P02PW | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 2x2, -20V, -6A, 150C, P | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI006P02PW | Diotec Semiconductor | Description: MOSFET POWERQFN 2X2 P -20V -6A 0 Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 4.5V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-QFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1242 pF @ 10 V | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI006P02PW | DIOTEC SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -36A; 2W; QFN2X2 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Pulsed drain current: -36A Power dissipation: 2W Case: QFN2X2 Gate-source voltage: ±12V On-state resistance: 35mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI008N09SQ | DIOTEC | Description: DIOTEC - DI008N09SQ - Leistungs-MOSFET, n-Kanal, 90 V, 8 A, 0.075 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI008N09SQ | Diotec Semiconductor | Description: MOSFET SO8 90V 8A 0.075OHM 150C Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A Power Dissipation (Max): 2W Supplier Device Package: 8-SO | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI008N09SQ | DIOTEC | Description: DIOTEC - DI008N09SQ - Leistungs-MOSFET, n-Kanal, 90 V, 8 A, 0.075 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 90V rohsCompliant: YES Dauer-Drainstrom Id: 8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 2W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.075ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI008N09SQ | Diotec Semiconductor | Description: MOSFET SO8 90V 8A 0.075OHM 150C Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A Power Dissipation (Max): 2W Supplier Device Package: 8-SO | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI008N09SQ | Diotec Semiconductor | MOSFETs MOSFET, SO-8, 90V, 8A, 150C, N | auf Bestellung 3970 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI0101 | ifm efector, inc. | Description: SPEED MONITOR; M30 X 1,5; NORMAL Packaging: Box Package / Case: Cylinder, Threaded - M30 Output Type: SPST-NO Operating Temperature: -25°C ~ 80°C (TA) Termination Style: Cable Voltage - Supply: 20V ~ 250V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI010N03PW | Diotec Semiconductor | Description: MOSFET POWERQFN 2X2 N 30V 10A 0. Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-QFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI010N03PW | Diotec Semiconductor | Trans MOSFET N-CH 30V 10A | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI010N03PW | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 2x2, 30V, 10A, 150C, N | auf Bestellung 6800 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI010N03PW | Diotec Semiconductor | Description: MOSFET POWERQFN 2X2 N 30V 10A 0. Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-QFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI010N03PW-AQ | Diotec Semiconductor | Description: MOSFET POWERQFN 2X2 N 30V Packaging: Bulk Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 6-QFN (2x2) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI010N03PW-AQ | Diotec Semiconductor | N-Channel Power MosfetAEC- Q101 qualification | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI010N03PW-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 2x2, 30V, 10A, 150C, N, AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI012N60D1 | Diotec Semiconductor | Description: MOSFET N-CH 600V 12A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3, DPak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 150 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI014N25D1-AQ | Diotec Semiconductor | MOSFET, DPAK, N, 250V, 15A, 0.28 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI014N25D1-AQ | Diotec Semiconductor | Description: MOSFET DPAK N 250V 15A Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 15A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI015N25D1 | Diotec Semiconductor | Trans MOSFET N-CH 250V 15A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI015N25D1 | Diotec Semiconductor | Description: MOSFET DPAK N 250V 0.2OHM 175C Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 255mOhm @ 15A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 125 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI015N25D1 | DIOTEC | Description: DIOTEC - DI015N25D1 - Leistungs-MOSFET, n-Kanal, 250 V, 15 A, 0.255 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 250V rohsCompliant: Y-EX Dauer-Drainstrom Id: 15A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 140W Bauform - Transistor: TO-252AA (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.255ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI015N25D1 | Diotec Semiconductor | Description: MOSFET DPAK N 250V 0.2OHM 175C Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 255mOhm @ 15A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 125 V | auf Bestellung 2482 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI016N06PQ2-AQ | Diotec Semiconductor | Description: MOSFET 2N-CH 60V 16A 8TDSON Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 16.7W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 30V Rds On (Max) @ Id, Vgs: 33mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI016N06PQ2-AQ | Diotec Semiconductor | Dual NChannel Power MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI017N06PQ-AQ | Diotec Semiconductor | DC/DC ConvertersPower SuppliesDC DrivesPower ToolsSynchronous RectifiersCommercial / industrial gradeAEC-Q101 qualification | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI017N06PQ-AQ | DIOTEC | Description: DIOTEC - DI017N06PQ-AQ - Leistungs-MOSFET, n-Kanal, 60 V, 17 A, 0.033 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 17A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 21W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.033ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI017N06PQ-AQ | DIOTEC | Description: DIOTEC - DI017N06PQ-AQ - Leistungs-MOSFET, n-Kanal, 60 V, 17 A, 0.033 ohm, QFN, Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI017N10D1 | DIOTEC SEMICONDUCTOR | DI017N10D1-DIO SMD N channel transistors | auf Bestellung 2500 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||||
| DI018N65D1 | Diotec Semiconductor | Description: DI018N65D1 Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Power Dissipation (Max): 142W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI018N65D1 | Diotec Semiconductor | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| DI018N65D1 | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12.5A; Idm: 54A; 142W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.5A Pulsed drain current: 54A Power dissipation: 142W Case: DPAK; TO252AA Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI020N06D1 | Diotec Semiconductor | Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI020N06D1 | Diotec Semiconductor | MOSFETs MOSFET, DPAK, 60V, 20A, 175C, N | auf Bestellung 965 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI020N06D1 | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 60A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 60A Power dissipation: 45W Case: DPAK; TO252AA Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 25.3nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 1847 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DI020N06D1 | DIOTEC | Description: DIOTEC - DI020N06D1 - Leistungs-MOSFET, n-Kanal, 60 V, 20 A, 0.035 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI020N06D1 | DIOTEC | Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R Substitute: DI020N06D1-DIO; DI020N06D1 TDI020N06D1 DIOTEC Anzahl je Verpackung: 500 Stücke | auf Bestellung 2500 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||||
| DI020N06D1 | Diotec Semiconductor | Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DI020N06D1 | Diotec Semiconductor | Description: MOSFET DPAK N 60V 0.024OHM 175C Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V | auf Bestellung 2175 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI020N06D1 | Diotec Semiconductor | Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DI020N06D1 | DIOTEC | Description: DIOTEC - DI020N06D1 - Leistungs-MOSFET, n-Kanal, 60 V, 20 A, 0.035 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 45W Bauform - Transistor: TO-252AA (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.035ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI020N06D1 | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 60A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 60A Power dissipation: 45W Case: DPAK; TO252AA Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 25.3nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke | auf Bestellung 1847 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||||
| DI020N06D1 | Diotec Semiconductor | Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 2200 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DI020N06D1 | Diotec Semiconductor | Description: MOSFET DPAK N 60V 0.024OHM 175C Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI020N06D1 | Diotec Semiconductor | Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 2200 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DI020N06D1 | Diotec Semiconductor | DI020N06D1 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI020N06D1-AQ | DIOTEC | Description: DIOTEC - DI020N06D1-AQ - Leistungs-MOSFET, n-Kanal, 60 V, 20 A, 0.034 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI020N06D1-AQ | Diotec Semiconductor | MOSFET, DPAK, 60V, 20A, 150C, N | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI020N06D1-AQ | Diotec Semiconductor | Description: MOSFET DPAK N 60V 0.034OHM 150C Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 484 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI020N06D1-AQ | Diotec Semiconductor | MOSFETs MOSFET, DPAK, 60V, 20A, 150C, N, AEC-Q101 | auf Bestellung 1821 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI020N06D1-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 50A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 13A Pulsed drain current: 50A Power dissipation: 25W Case: DPAK; TO252AA Gate-source voltage: ±20V On-state resistance: 38mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI020N06D1-AQ | DIOTEC | Description: DIOTEC - DI020N06D1-AQ - Leistungs-MOSFET, n-Kanal, 60 V, 20 A, 0.034 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 25W Bauform - Transistor: TO-252AA (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.034ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI020N06D1-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 50A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 13A Pulsed drain current: 50A Power dissipation: 25W Case: DPAK; TO252AA Gate-source voltage: ±20V On-state resistance: 38mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI020N06D1-AQ | Diotec Semiconductor | Description: MOSFET DPAK N 60V 0.034OHM 150C Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI020P06PT | Diotec Semiconductor | P-Channel Power MOSFETP-Kanal Leistungs-MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI020P06PT | Diotec Semiconductor | Description: MOSFET PWRQFN 3X3 -60V 0.045OHM Packaging: Tape & Reel (TR) Mounting Type: Surface Mount FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A Power Dissipation (Max): 29.7W Supplier Device Package: PowerQFN 3x3 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI020P06PT | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, -60V, -20A, 150C, P | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI020P06PT | DIOTEC SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -70A; 29.7W; QFN3X3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -20A Pulsed drain current: -70A Power dissipation: 29.7W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI020P06PT | DIOTEC | Description: DIOTEC - DI020P06PT - Leistungs-MOSFET, p-Kanal, 60 V, 20 A, 0.045 ohm, QFN, Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI020P06PT | Diotec Semiconductor | Description: MOSFET PWRQFN 3X3 -60V 0.045OHM Packaging: Cut Tape (CT) Mounting Type: Surface Mount FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A Power Dissipation (Max): 29.7W Supplier Device Package: PowerQFN 3x3 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI020P06PT | DIOTEC | Description: DIOTEC - DI020P06PT - Leistungs-MOSFET, p-Kanal, 60 V, 20 A, 0.045 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 35.7W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.045ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI020P06PT-AQ | DIOTEC | Description: DIOTEC - DI020P06PT-AQ - Leistungs-MOSFET, p-Kanal, 60 V, 20 A, 0.045 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 35.7W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.045ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI020P06PT-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 3X3, -60V, -20A Packaging: Cut Tape (CT) Mounting Type: Surface Mount FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A Power Dissipation (Max): 29.7W Supplier Device Package: 8-QFN (3x3) Package / Case: 8-PowerVDFN Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2433 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI020P06PT-AQ | DIOTEC SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -70A; 29.7W; QFN3X3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -20A Pulsed drain current: -70A Power dissipation: 29.7W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Anzahl je Verpackung: 1 Stücke | auf Bestellung 4699 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||||
| DI020P06PT-AQ | Diotec Semiconductor | P-Channel Power MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI020P06PT-AQ | DIOTEC | Description: DIOTEC - DI020P06PT-AQ - Leistungs-MOSFET, p-Kanal, 60 V, 20 A, 0.045 ohm, QFN, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI020P06PT-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, -60V, -20A, 150C, P, AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI020P06PT-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 3X3, -60V, -20A Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A Power Dissipation (Max): 29.7W Supplier Device Package: 8-QFN (3x3) Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI020P06PT-AQ | DIOTEC SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -70A; 29.7W; QFN3X3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -20A Pulsed drain current: -70A Power dissipation: 29.7W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry | auf Bestellung 4699 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DI025N06PT | Diotec Semiconductor | N-Channel Power MOSFETN-Kanal Leistungs-MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI025N06PT | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, 65V, 25A, 150C, N | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI025N06PT | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 N 65V Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 30 V Input Capacitance (Ciss) (Max) @ Vds: 406 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI025N06PT | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 15A; Idm: 80A; 25W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 15A Pulsed drain current: 80A Power dissipation: 25W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI025N06PT-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, 65V, 25A, 150C, N, AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI025N06PT-AQ | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 65V 0.02OHM Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Input Capacitance (Ciss) (Max) @ Vds: 406 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI025N06PT-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 15A; Idm: 80A; 25W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 15A Pulsed drain current: 80A Power dissipation: 25W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry | auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DI025N06PT-AQ | DIOTEC | Description: DIOTEC - DI025N06PT-AQ - Leistungs-MOSFET, n-Kanal, 65 V, 25 A, 0.02 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 65V rohsCompliant: YES Dauer-Drainstrom Id: 25A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 25W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.02ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 4980 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI025N06PT-AQ | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 65V 0.02OHM Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Input Capacitance (Ciss) (Max) @ Vds: 406 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 1102 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI025N06PT-AQ | Diotec Semiconductor | MOSFET, PowerQFN 3x3, 65V, 25A, 150C, N | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI025N06PT-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 15A; Idm: 80A; 25W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 15A Pulsed drain current: 80A Power dissipation: 25W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Anzahl je Verpackung: 1 Stücke | auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||||
| DI025N20PQ | Diotec Semiconductor | Description: MOSFET N , 200V 25A 48mW Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 20A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-QFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 100 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI025N20PQ | Diotec Semiconductor | N-Channel Power MOSFETN-Kanal Leistungs-MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI025N20PQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 5x6, 0, 200V, 25A, 0.048? | auf Bestellung 4919 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI025N20PQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 100A; 135W; QFN5x6 Polarisation: unipolar Gate charge: 28nC On-state resistance: 48mΩ Drain current: 20A Gate-source voltage: ±20V Pulsed drain current: 100A Power dissipation: 135W Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Case: QFN5x6 Kind of package: reel; tape Mounting: SMD | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI025N20PQ | Diotec Semiconductor | Description: MOSFET N , 200V 25A 48mW Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 20A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-QFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 100 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI028N10PQ2 | Diotec Semiconductor | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| DI028N10PQ2 | DIOTEC SEMICONDUCTOR | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 18A; Idm: 130A; 32.7W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 18A Pulsed drain current: 130A Power dissipation: 32.7W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI028N10PQ2 | Diotec Semiconductor | Description: DI028N10PQ2 Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 32.7W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1028pF @ 50V Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TDSON-8-4 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI028N10PQ2-AQ | Diotec Semiconductor | MOSFETs (Field Effect Transistors) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI028N10PQ2-AQ | Diotec Semiconductor | Description: MOSFET 2N-CH 100V 28A 8TDSON Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 32.7W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1028pF @ 50V Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI028N10PQ2-AQ | DIOTEC | Description: DIOTEC - DI028N10PQ2-AQ - Dual-MOSFET, Zweifach n-Kanal, 100 V, 28 A, 0.021 ohm tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI028N10PQ2-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 5x6, 100V, 28A, 150C, N, AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI028N10PQ2-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 18A; Idm: 130A; 32.7W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 18A Pulsed drain current: 130A Power dissipation: 32.7W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI028N10PQ2-AQ | DIOTEC | Description: DIOTEC - DI028N10PQ2-AQ - Dual-MOSFET, Zweifach n-Kanal, 100 V, 28 A, 0.021 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 28A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 100V euEccn: NLR Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.021ohm productTraceability: No Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 32.7W Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI028P03PT | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, -30V, -28A, 150C, P | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI028P03PT | Diotec Semiconductor | Trans MOSFET P-CH 30V 28A T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI028P03PT | Diotec Semiconductor | Description: IC Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI02H | Apem | DIP Switches/SIP Switches | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI030N03D1 | DIOTEC | Description: DIOTEC - DI030N03D1 - Leistungs-MOSFET, n-Kanal, 30 V, 30 A, 0.014 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 40W Bauform - Transistor: TO-252AA (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.014ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI030N03D1 | Diotec Semiconductor | DI030N03D1 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI030N03D1 | Diotec Semiconductor | Description: MOSFET DPAK N 30V 0.01OHM 175C Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI030N03D1 | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 80A; 40W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Power dissipation: 40W Case: DPAK; TO252AA Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 17.5nC Pulsed drain current: 80A | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI030N03D1 | Diotec Semiconductor | MOSFETs MOSFET, DPAK, 30V, 30A, 175C, N | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI030N03D1 | DIOTEC | Description: DIOTEC - DI030N03D1 - Leistungs-MOSFET, n-Kanal, 30 V, 30 A, 0.014 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 40W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.014ohm | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI030N03D1 | Diotec Semiconductor | Description: MOSFET DPAK N 30V 0.01OHM 175C Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 15 V | auf Bestellung 1502 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI032N03PTK | Diotec Semiconductor | Description: IC Packaging: Bulk | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI035N06PQ2 | Diotec Semiconductor | Description: MOSFET 2N-CH 60V 35A 8TDSON Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 35.7W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 782pF @ 30V Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TDSON-8-4 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI035N06PQ2 | Diotec Semiconductor | PowerQFN 5x6-Dual, N+N, 60V, 35A, 15m?, 175C | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI035N06PQ2-AQ | DIOTEC SEMICONDUCTOR | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 20A; Idm: 110A; 35.7W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Pulsed drain current: 110A Power dissipation: 35.7W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 14.6nC Kind of package: reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI035N06PQ2-AQ | DIOTEC | Description: DIOTEC - DI035N06PQ2-AQ - Dual-MOSFET, Zweifach n-Kanal, 60 V, 35 A, 0.015 ohm tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | auf Bestellung 4998 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI035N06PQ2-AQ | Diotec Semiconductor | Description: MOSFET 2N-CH 60V 35A 8TDSON Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 35.7W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 782pF @ 30V Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI035N06PQ2-AQ | Diotec Semiconductor | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI035N06PQ2-AQ | DIOTEC | Description: DIOTEC - DI035N06PQ2-AQ - Dual-MOSFET, Zweifach n-Kanal, 60 V, 35 A, 0.015 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 35A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.015ohm productTraceability: No Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 35.7W Betriebstemperatur, max.: 175°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 4998 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI035N10PT | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 N 100V 35A 0 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI035N10PT | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, 100V, 35A, 150C, N | auf Bestellung 3705 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI035N10PT | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 130A; 25W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Pulsed drain current: 130A Power dissipation: 25W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI035N10PT | Diotec Semiconductor | MOSFET, PowerQFN 3x3, 100V, 35A, N, 25W | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI035N10PT | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 N 100V 35A 0 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V | auf Bestellung 3988 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI035N10PT-AQ | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 N 100V 35A 0 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 3993 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI035N10PT-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 130A; 25W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Pulsed drain current: 130A Power dissipation: 25W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI035N10PT-AQ | Diotec Semiconductor | MOSFET, PowerQFN 3x3, 100V, 35A, 0, 25W | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI035N10PT-AQ | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 N 100V 35A 0 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI035N10PT-AQ | DIOTEC | Description: DIOTEC - DI035N10PT-AQ - Leistungs-MOSFET, n-Kanal, 100 V, 35 A, 0.018 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 25W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.018ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 4924 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI035N10PT-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 130A; 25W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Pulsed drain current: 130A Power dissipation: 25W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI035N10PT-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, 100V, 35A, 150C, N, AEC-Q101 | auf Bestellung 2045 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI035P02PT | DIOTEC | Description: DIOTEC - DI035P02PT - Leistungs-MOSFET, p-Kanal, 20 V, 35 A, 3900 µohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: Y-EX Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 52W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 3900µohm SVHC: No SVHC (21-Jan-2025) | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI035P02PT | DIOTEC SEMICONDUCTOR | DI035P02PT-DIO SMD P channel transistors | auf Bestellung 260 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||||
| DI035P02PT | Diotec Semiconductor | Trans MOSFET P-CH 20V 35A T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI035P04PT | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 P -40V -35A Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 20 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI035P04PT | DIOTEC | Description: DIOTEC - DI035P04PT - Leistungs-MOSFET, p-Kanal, 40 V, 35 A, 0.019 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 30W Anzahl der Pins: 8Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.019ohm | auf Bestellung 4474 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI035P04PT | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, -40V, -35A, 150C, P | auf Bestellung 1963 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI035P04PT | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 P -40V -35A Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 20 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI035P04PT | DIOTEC | Description: DIOTEC - DI035P04PT - Leistungs-MOSFET, p-Kanal, 40 V, 35 A, 0.019 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 30W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.019ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 4474 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI035P04PT-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, -40V, -35A, 150C, P, AEC-Q101 | auf Bestellung 1430 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI035P04PT-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 3X3, -40V, -35A Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 20 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI035P04PT-AQ | DIOTEC | Description: DIOTEC - DI035P04PT-AQ - Leistungs-MOSFET, p-Kanal, 40 V, 35 A, 0.019 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 30W Anzahl der Pins: 8Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.019ohm | auf Bestellung 4954 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI035P04PT-AQ | Diotec Semiconductor | MOSFET, PowerQFN 3x3, -40V, -35A, 0, 25W | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI035P04PT-AQ | DIOTEC SEMICONDUCTOR | DI035P04PT-AQ-DIO SMD P channel transistors | auf Bestellung 5000 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||||
| DI035P04PT-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 3X3, -40V, -35A Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 1526 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI035P04PT-AQ | DIOTEC | Description: DIOTEC - DI035P04PT-AQ - Leistungs-MOSFET, p-Kanal, 40 V, 35 A, 0.019 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 30W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.019ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 4954 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI036N20PQ | Diotec Semiconductor | MOSFET, PowerQFN 5x6, 200V, 36A, 0, 125W | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI036N20PQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 5X6, 200V, 36A, | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI038N04PQ2 | Diotec Semiconductor | Description: MOSFET, 45V, 38A, N, 31W | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI038N04PQ2 | Diotec Semiconductor | Description: MOSFET, 45V, 38A, N, 31W | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI038N04PQ2 | Diotec Semiconductor | Dual N-Channel Power MOSFET N-Kanal Leistungs-Doppel-MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI038N04PQ2-AQ | Diotec Semiconductor | Description: MOSFET, 45V, 38A, N, 31W | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI038N04PQ2-AQ | Diotec Semiconductor | Description: MOSFET, 45V, 38A, N, 31W | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI038N04PQ2-AQ | Diotec Semiconductor | MOSFET MOSFET, PowerQFN 5x6, 45V, 38A, 150C, N, AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI040N03PT | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, 30V, 40A, 150C, N | auf Bestellung 4995 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI040N03PT | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 120A; 25W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 120A Power dissipation: 25W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI040N03PT | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 N 30V Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI040N03PT-AQ | Diotec Semiconductor | Trans MOSFET N-CH 30V 40A Automotive 8-Pin QFN EP T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI040N03PT-AQ | DIOTEC | Description: DIOTEC - DI040N03PT-AQ - Leistungs-MOSFET, n-Kanal, 30 V, 40 A, 0.007 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 30W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.007ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI040N03PT-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 3X3, 30V, 40A, Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI040N03PT-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 120A; 25W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 120A Power dissipation: 25W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Anzahl je Verpackung: 1 Stücke | auf Bestellung 195 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||||
| DI040N03PT-AQ | Diotec Semiconductor | DI045N03PTN-Channel Power MOSFETN-Kanal Leistungs-AEC-Q | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI040N03PT-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 120A; 25W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 120A Power dissipation: 25W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry | auf Bestellung 195 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DI040N03PT-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 3X3, 30V, 40A, Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI040N03PT-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 3X3, 30V, 40A, Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI040N03PT-AQ | Diotec Semiconductor | DI045N03PTN-Channel Power MOSFETN-Kanal Leistungs-AEC-Q | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI040N03PT-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, 30V, 40A, 150C, N, AEC-Q101 | auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI040N10D1 | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 160A; 140W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 40A Pulsed drain current: 160A Power dissipation: 140W Case: DPAK Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 94nC Kind of package: reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI040N10D1 | Diotec Semiconductor | Description: DI040N10D1 Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 28A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI040P04D1 | Diotec Semiconductor | MOSFETs MOSFET, DPAK, -40V, -40A, 150C, P | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI040P04D1 | Diotec Semiconductor | Description: MOSFET DPAK P -40V -40A Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI040P04D1-AQ | Diotec Semiconductor | Description: MOSFET DPAK P -40V -40A 0.015? 1 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 2352 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI040P04D1-AQ | Diotec Semiconductor | MOSFETs MOSFET, DPAK, -40V, -40A, 150C, P, AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI040P04D1-AQ | DIOTEC | Description: DIOTEC - DI040P04D1-AQ - Leistungs-MOSFET, p-Kanal, 40 V, 40 A, 0.015 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | auf Bestellung 2493 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI040P04D1-AQ | Diotec Semiconductor | Description: MOSFET DPAK P -40V -40A 0.015? 1 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI040P04D1-AQ | Diotec Semiconductor | DI040P04D1-AQ | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI040P04D1-AQ | DIOTEC | Description: DIOTEC - DI040P04D1-AQ - Leistungs-MOSFET, p-Kanal, 40 V, 40 A, 0.015 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 52W Bauform - Transistor: TO-252AA (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.015ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2495 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI040P04PT | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 P -40V -40A Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 22.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V | auf Bestellung 4839 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI040P04PT | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 P -40V -40A Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 22.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI040P04PT | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, -40V, -40A, 150C, P | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI040P04PT-AQ | Diotec Semiconductor | MOSFET, PowerQFN 3x3, -40V, -35A, 0, 25W | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI040P04PT-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, -40V, -40A, 150C, P, AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI040P04PT-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 3X3, -40V, -40A Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 22.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI040P04PT-AQ | DIOTEC | Description: DIOTEC - DI040P04PT-AQ - Leistungs-MOSFET, p-Kanal, 40 V, 40 A, 0.015 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 31.2W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.015ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI040P04PT-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 3X3, -40V, -40A Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 22.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4983 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI045N03PT | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 N 30V 45A 0. Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 24A, 10V Power Dissipation (Max): 16W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI045N03PT | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 N 30V 45A 0. Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 24A, 10V Power Dissipation (Max): 16W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI045N03PT | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, 30V, 45A, 150C, N | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI045N03PT-AQ | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 N 30V Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 24A, 10V Power Dissipation (Max): 16W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI045N03PT-AQ | Diotec Semiconductor | Trans MOSFET N-CH 30V 45A Automotive 8-Pin QFN EP T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI045N03PT-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, 30V, 45A, 150C, N, AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI045N03PT-AQ | Diotec Semiconductor | DI045N03PTN-Channel Power MOSFETN-Kanal Leistungs-MOSFETID25°C= 45 ARDS(on) 3.4 mΩTjmax= 150°CVDSS= 30 VPD= 16 WEAS= 55 mJ AEC-Q | auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI045N04PT-AQ | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 N 45V Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V Power Dissipation (Max): 41.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI045N10PQ | Diotec Semiconductor | Description: MOSFET POWERQFN 5X6 N 100V Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2551 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI045N10PQ | Diotec Semiconductor | MOSFET, PowerQFN 5x6, N, 100V, 45A, 0.0065 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI045N10PQ-AQ | Diotec Semiconductor | Description: MOSFET PWRQFN 5X6 100V 0.0065OHM Packaging: Tape & Reel (TR) Mounting Type: Surface Mount FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A Power Dissipation (Max): 110W Supplier Device Package: PowerQFN 5x6 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI045N10PQ-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 5x6, 100V, 45A, 150C, N, AEC-Q101 | auf Bestellung 2780 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI045N10PQ-AQ | DIOTEC | Description: DIOTEC - DI045N10PQ-AQ - Leistungs-MOSFET, n-Kanal, 100 V, 45 A, 0.0065 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 45A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 50W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0065ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI045N10PQ-AQ | Diotec Semiconductor | N-Channel Power MOSFETN-Kanal Leistungs-MOSFETAEC-Q101 qualification | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI045N10PQ-Q | Diotec Semiconductor | N-Channel Power MOSFETN-Kanal Leistungs-MOSFETAEC-Q101 qualification | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI048N04PQ-AQ | Diotec Semiconductor | Description: MOSFET POWERQFN 5X6 N 40V Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 12A, 10V Power Dissipation (Max): 35.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 20 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI048N04PQ2 | DIOTEC | Description: DIOTEC - DI048N04PQ2 - Dual-MOSFET, Zweifach n-Kanal, 40 V, 48 A, 0.096 ohm tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI048N04PQ2 | Diotec Semiconductor | Description: MOSFET 2N-CH 40V 48A 8TDSON Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 27W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 20V Rds On (Max) @ Id, Vgs: 9.6mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TDSON-8-4 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI048N04PQ2 | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 5x6, 40V, 48A, 150C, N | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI048N04PQ2-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 5x6, 40V, 48A, 150C, N, AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI048N04PQ2-AQ | Diotec Semiconductor | Description: MOSFET 2N-CH 40V 48A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 27W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 20V Rds On (Max) @ Id, Vgs: 9.6mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI048N04PQ2-AQ | DIOTEC | Description: DIOTEC - DI048N04PQ2-AQ - Dual-MOSFET, Zweifach n-Kanal, 40 V, 36 A, 0.096 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 36A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.096ohm productTraceability: No Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 24W Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI048N04PQ2-AQ | Diotec Semiconductor | MOSFET, PowerQFN 5x6, 40V, 48A, N, 28W | auf Bestellung 4700 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI048N04PQ2-AQ | Diotec Semiconductor | Description: MOSFET 2N-CH 40V 48A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 27W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 20V Rds On (Max) @ Id, Vgs: 9.6mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4950 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI048N04PT | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 200A; 37.5W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 35A Pulsed drain current: 200A Power dissipation: 37.5W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 48.5nC Kind of package: reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI048N04PT-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 3X3, 40V, 48A, Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 12A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 48.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2268 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4129 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI048N04PT-AQ | DIOTEC | Description: DIOTEC - DI048N04PT-AQ - Leistungs-MOSFET, n-Kanal, 40 V, 48 A, 7600 µohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 48A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 37.5W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 7600µohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI048N04PT-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 200A; 37.5W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 35A Pulsed drain current: 200A Power dissipation: 37.5W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 48.5nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DI048N04PT-AQ | Diotec Semiconductor | MOSFET, PowerAEC-Q Qualified | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI048N04PT-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 3X3, 40V, 48A, Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 12A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 48.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2268 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI048N04PT-AQ | DIOTEC | Description: DIOTEC - DI048N04PT-AQ - Leistungs-MOSFET, n-Kanal, 40 V, 48 A, 7600 µohm, QFN, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 48A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 37.5W Anzahl der Pins: 8Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 7600µohm | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI048N04PT-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, 40V, 48A, 150C, N, AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI048N04PT-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 200A; 37.5W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 35A Pulsed drain current: 200A Power dissipation: 37.5W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 48.5nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Anzahl je Verpackung: 1 Stücke | auf Bestellung 5000 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||||
| DI048N08PQ | Diotec Semiconductor | Description: MOSFET POWERQFN 5X6 N 80V Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 56.8W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1812 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI048N08PQ | Diotec Semiconductor | MOSFET, PowerQFN 5x6, N, 80V, 48A, 0.0065 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI048N08PQ-Q | Diotec Semiconductor | DC/DC ConvertersPower SuppliesDC DrivesPower ToolsSynchronous RectifiersCommercial / industrial grade 1)Suffix -Q: AEC-Q101 compliant 1 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI049N06PTK | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, 65V, 49A, 150C, N | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI049N06PTK | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 N 65V Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1691 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI049N06PTK | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 32A; Idm: 300A; 25W; QFN3X3 Polarisation: unipolar Gate charge: 31nC On-state resistance: 10mΩ Kind of channel: enhancement Gate-source voltage: ±20V Power dissipation: 25W Drain current: 32A Drain-source voltage: 65V Pulsed drain current: 300A Type of transistor: N-MOSFET Case: QFN3X3 Kind of package: reel; tape Mounting: SMD | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI049N06PTK-AQ | Diotec Semiconductor | N-Channel Power MOSFETN-Kanal Leistungs-MOSFETAEC-Q101 qualification | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI049N06PTK-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, 65V, 49A, 150C, N, AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI049N06PTK-AQ | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 N 65V Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1691 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI049N06PTK-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 32A; Idm: 300A; 25W; QFN3X3 Polarisation: unipolar Gate charge: 31nC On-state resistance: 10mΩ Kind of channel: enhancement Gate-source voltage: ±20V Power dissipation: 25W Drain current: 32A Drain-source voltage: 65V Pulsed drain current: 300A Type of transistor: N-MOSFET Application: automotive industry Case: QFN3X3 Kind of package: reel; tape Mounting: SMD | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI04S | Apem | DIP Switches/SIP Switches 4P SPST | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI050N04PT | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, 40V, 50A, 150C, N | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI050N04PT | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 N 40V Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI050N04PT-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 140A; 37W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 140A Power dissipation: 37W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI050N04PT-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 3X3, 40V, 50A, Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3255 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI050N04PT-AQ | DIOTEC | Description: DIOTEC - DI050N04PT-AQ - Leistungs-MOSFET, n-Kanal, 40 V, 50 A, 0.0057 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 30W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0057ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 4900 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI050N04PT-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 3X3, 40V, 50A, Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3255 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4610 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI050N04PT-AQ | Diotec Semiconductor | MOSFET, PowerQFN 3x3, 40V, 50A, 0, 37W | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI050N04PT-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, 40V, 50A, 150C, N, AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI050N06D1 | Diotec Semiconductor | Description: MOSFET, DPAK, 60V, 50A, 0, 42W Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI050N06D1 | Diotec Semiconductor | MOSFETs MOSFET, DPAK, 60V, 50A, 150C, N | auf Bestellung 1136 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI050N06D1 | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 30A; Idm: 160A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 30A Pulsed drain current: 160A Power dissipation: 42W Case: DPAK; TO252AA Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke | auf Bestellung 2237 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||||
| DI050N06D1 | DIOTEC | Description: DIOTEC - DI050N06D1 - Leistungs-MOSFET, n-Kanal, 65 V, 50 A, 0.011 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI050N06D1 | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 30A; Idm: 160A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 30A Pulsed drain current: 160A Power dissipation: 42W Case: DPAK; TO252AA Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 2237 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DI050N06D1 | Diotec Semiconductor | Description: MOSFET, DPAK, 60V, 50A, 0, 42W Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V | auf Bestellung 753 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI050N06D1 | DIOTEC | Description: DIOTEC - DI050N06D1 - Leistungs-MOSFET, n-Kanal, 65 V, 50 A, 0.011 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 65V rohsCompliant: Y-EX Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 42W Bauform - Transistor: TO-252AA (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.011ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI050N06D1-AQ | Diotec Semiconductor | MOSFETs MOSFET, DPAK, 60V, 50A, 150C, N, AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI050N06D1-AQ | DIOTEC | Description: DIOTEC - DI050N06D1-AQ - Leistungs-MOSFET, n-Kanal, 65 V, 50 A, 0.011 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 65V rohsCompliant: Y-EX Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 42W Bauform - Transistor: TO-252AA (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.011ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI050N06D1-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 30A; Idm: 160A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 30A Pulsed drain current: 160A Power dissipation: 42W Case: DPAK; TO252AA Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI050N06D1-AQ | Diotec Semiconductor | N-Channel Power MOSFETN-Kanal Leistungs-MOSFETAEC-Q101 compliant | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI050N06D1-AQ | Diotec Semiconductor | Description: MOSFET DPAK N 60V 50A 0.0085OHM Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2293 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI050N06D1-AQ | DIOTEC | Description: DIOTEC - DI050N06D1-AQ - Leistungs-MOSFET, n-Kanal, 65 V, 50 A, 0.011 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI050N06D1-AQ | Diotec Semiconductor | Description: MOSFET DPAK N 60V 50A 0.0085OHM Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI050N06D1-Q | Diotec Semiconductor | Description: MOSFET, DPAK, N, 60V, 50A Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252-3, DPak Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI050N06D1-Q | Diotec Semiconductor | Description: MOSFET, DPAK, N, 60V, 50A Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252-3, DPak Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI050N06PQ2-AQ | Diotec Semiconductor | Description: DI050N06PQ2-AQ Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 40.5W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 30V Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 36.4nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI050N06PQ2-AQ | Diotec Semiconductor | MOSFETs PowerQFN 5x6-Dual, N+N, 60V, 50A, 8.5m?, 175C, AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI050N06PQ2-AQ | DIOTEC SEMICONDUCTOR | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 35A; Idm: 280A; 40.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 35A Pulsed drain current: 280A Power dissipation: 40.5W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 36.4nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI050P03PT | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, -30V, -50A, 150C, P | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI050P03PT | DIOTEC | Description: DIOTEC - DI050P03PT - Leistungs-MOSFET, p-Kanal, 30 V, 50 A, 0.008 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 39W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.008ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI050P03PT | DIOTEC SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 39W; QFN3X3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -50A Pulsed drain current: -200A Power dissipation: 39W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 70nC Kind of package: reel; tape | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI050P03PT | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 P -30V Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3721 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI050P03PT-AQ | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 P -30V Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3721 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI050P03PT-AQ | DIOTEC | Description: DIOTEC - DI050P03PT-AQ - Leistungs-MOSFET, p-Kanal, 30 V, 50 A, 0.008 ohm, QFN, Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI050P03PT-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, -30V, -50A, 150C, P, AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI050P03PT-AQ | Diotec Semiconductor | MOSFET, PowerQFN 3x3, -30V, -50A, P, 39W | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI050P03PT-AQ | DIOTEC | Description: DIOTEC - DI050P03PT-AQ - Leistungs-MOSFET, p-Kanal, 30 V, 50 A, 0.008 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 39W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.008ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI050P03PT-AQ | DIOTEC SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 39W; QFN3X3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -50A Pulsed drain current: -200A Power dissipation: 39W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 70nC Kind of package: reel; tape Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI052N04PQ2-AQ | Diotec Semiconductor | Dual N-Channel Power MOSFETN-Kanal Leistungs-Doppel-MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI054N10D1-AQ | DIOTEC | Description: DIOTEC - DI054N10D1-AQ - Leistungs-MOSFET, n-Kanal, 100 V, 54 A, 0.0095 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 54A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 47.9W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0095ohm | auf Bestellung 2480 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI054N10D1-AQ | DIOTEC | Description: DIOTEC - DI054N10D1-AQ - Leistungs-MOSFET, n-Kanal, 100 V, 54 A, 0.0095 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 54A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 47.9W Bauform - Transistor: TO-252AA (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0095ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2480 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI060N06PQ | Diotec Semiconductor | Description: MOSFET POWERQFN 5X6 N 60V Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI060N06PQ | Diotec Semiconductor | MOSFETs PowerQFN 5x6, N, 60V, 60A, 7m?, 150C | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI060N10D1 | Diotec Semiconductor | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI060N10D1 | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 37A; Idm: 300A; 54.3W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 37A Pulsed drain current: 300A Power dissipation: 54.3W Case: DPAK Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke | auf Bestellung 98 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||||
| DI060N10D1 | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 37A; Idm: 300A; 54.3W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 37A Pulsed drain current: 300A Power dissipation: 54.3W Case: DPAK Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DI064P04D1-AQ | DIOTEC | Description: DIOTEC - DI064P04D1-AQ - Leistungs-MOSFET, p-Kanal, 40 V, 64 A, 7600 µohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 64A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 48.3W Bauform - Transistor: TO-252AA (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 7600µohm SVHC: No SVHC (21-Jan-2025) | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI064P04D1-AQ | DIOTEC | Description: DIOTEC - DI064P04D1-AQ - Leistungs-MOSFET, p-Kanal, 40 V, 64 A, 7600 µohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: Y-EX euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 7600µohm rohsPhthalatesCompliant: YES usEccn: EAR99 | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI065N06PT | Diotec Semiconductor | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| DI065N06PT | Diotec Semiconductor | Description: MOSFET POWERQFN 3X3 N 65V Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1617 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI065N08D1 | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 300A; 62.5W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 40A Pulsed drain current: 300A Power dissipation: 62.5W Case: DPAK Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 35nC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI065N08D1 | Diotec Semiconductor | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| DI065N08D1 | Diotec Semiconductor | Description: DI065N08D1 Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1812 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI065N08D1-AQ | Diotec Semiconductor | MOSFETs DPAK, N, 80V, 65A, 7m?, 175C, AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI065N08D1-AQ | Diotec Semiconductor | Description: MOSFET DPAK N 80V 65A Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1812 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI068N03PQ | DComponents | Description: MOSFET, PowerQFN5x6, 30V Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: 150°C FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A Power Dissipation (Max): 25W Supplier Device Package: PowerQFN 5x6 Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI068N03PQ | DIOTEC SEMICONDUCTOR | DI068N03PQ-DIO SMD N channel transistors | auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||||
| DI068N03PQ-AQ | Diotec Semiconductor | MOSFET N Kanal | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI068N03PQ-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 5X6, 30V, 68A, | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI068N03PQ-AQ | Diotec Semiconductor | MOSFET MOSFET, PowerQFN 5x6, 30V, 68A, 150C, N, AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI068P04D1 | DIOTEC SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -43A; Idm: -300A; 54W Polarisation: unipolar Case: DPAK; TO252AA Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Pulsed drain current: -300A Drain current: -43A Drain-source voltage: -40V Gate charge: 125nC On-state resistance: 10.5mΩ Power dissipation: 54W Gate-source voltage: ±20V Kind of package: reel; tape | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI068P04D1-AQ | Diotec Semiconductor | Description: MOSFET, DPAK, -40V, -68A, 0, 54W Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 68A Power Dissipation (Max): 54W Supplier Device Package: TO-252 (DPAK) Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI068P04D1-AQ | DIOTEC SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -43A; Idm: -300A; 54W Polarisation: unipolar Application: automotive industry Case: DPAK; TO252AA Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Pulsed drain current: -300A Drain current: -43A Drain-source voltage: -40V Gate charge: 125nC On-state resistance: 10.5mΩ Power dissipation: 54W Gate-source voltage: ±20V Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke | auf Bestellung 2497 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||||
| DI068P04D1-AQ | DIOTEC SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -43A; Idm: -300A; 54W Polarisation: unipolar Application: automotive industry Case: DPAK; TO252AA Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Pulsed drain current: -300A Drain current: -43A Drain-source voltage: -40V Gate charge: 125nC On-state resistance: 10.5mΩ Power dissipation: 54W Gate-source voltage: ±20V Kind of package: reel; tape | auf Bestellung 2497 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DI068P04D1-AQ | DIOTEC | Description: DIOTEC - DI068P04D1-AQ - Leistungs-MOSFET, p-Kanal, 40 V, 68 A, 0.0073 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI068P04D1-AQ | Diotec Semiconductor | P-Channel Power MOSFETP-Kanal Leistungs-MOSFETAEC-Q101 qualification | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI068P04D1-AQ | Diotec Semiconductor | Description: MOSFET, DPAK, -40V, -68A, 0, 54W Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 68A Power Dissipation (Max): 54W Supplier Device Package: TO-252 (DPAK) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 386 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI068P04D1-AQ | Diotec Semiconductor | MOSFET MOSFET, DPAK, -40V, -68A, 150C, P, AEC-Q101 | auf Bestellung 2430 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI06W8-05 | MEAN WELL | Isolated DC/DC Converters - Through Hole 6W 9-75Vin +/-5V +/-0-600mA 1x1 Regulated DIP | auf Bestellung 33 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI06W8-12 | MEAN WELL | Isolated DC/DC Converters - Through Hole 6W 9-75Vin +/-12V +/-0-250mA 1x1 Regulated DIP | auf Bestellung 57 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI06W8-12 | MEAN WELL USA Inc. | Description: I/P: 9-75VDC;O/P:12V 250MA,1"*1" Packaging: Bulk Package / Case: 6-DIP Module, 5 Leads Size / Dimension: 1.00" L x 1.00" W x 0.40" H (25.4mm x 25.4mm x 10.2mm) Mounting Type: Through Hole Type: Isolated Module Operating Temperature: -40°C ~ 90°C (With Derating) Applications: ITE (Commercial) Voltage - Input (Max): 75V Approval Agency: CE, EAC, UKCA Efficiency: 85% Current - Output (Max): 250mA, 250mA Voltage - Input (Min): 9V Voltage - Output 1: 12V Voltage - Output 2: -12V Power (Watts): 6 W Number of Outputs: 2 Voltage - Isolation: 3 kV | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI06W8-15 | MEAN WELL | Isolated DC/DC Converters - Through Hole 6W 9-75Vin +/-15V +/-0-200mA 1x1 Regulated DIP | auf Bestellung 77 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI070P04PQ | Diotec Semiconductor | PChannel Power MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI070P04PQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 5x6, -40V, -70A, 150C, P | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI070P04PQ | Diotec Semiconductor | Description: MOSFET POWERQFN 5X6 P -40V Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 20 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI070P04PQ | DIOTEC SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -300A; 46W; QFN5x6 Type of transistor: P-MOSFET Drain-source voltage: -40V Drain current: -70A Power dissipation: 46W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 125nC Kind of channel: enhancement Pulsed drain current: -300A Polarisation: unipolar Kind of package: reel; tape | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI070P04PQ-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 5X6, -40V, -70A Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4018 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI070P04PQ-AQ | DIOTEC | Description: DIOTEC - DI070P04PQ-AQ - Leistungs-MOSFET, p-Kanal, 40 V, 70 A, 0.0065 ohm, QFN, Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | auf Bestellung 4985 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI070P04PQ-AQ | DIOTEC SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -300A; 46W; QFN5x6 Type of transistor: P-MOSFET Drain-source voltage: -40V Drain current: -70A Power dissipation: 46W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 125nC Kind of channel: enhancement Application: automotive industry Pulsed drain current: -300A Polarisation: unipolar Kind of package: reel; tape | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI070P04PQ-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 5X6, -40V, -70A Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 20 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI070P04PQ-AQ | Diotec Semiconductor | MOSFETs (Field Effect Transistors) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI070P04PQ-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 5x6, -40V, -70A, 150C, P, AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI072N06PT | Diotec Semiconductor | Description: IC Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI072N06PT | DIOTEC SEMICONDUCTOR | DI072N06PT-DIO SMD N channel transistors | auf Bestellung 174 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||||
| DI074N06D1K | Diotec Semiconductor | Description: IC Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V Power Dissipation (Max): 56.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1691 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI075N04PT-AQ | Diotec Semiconductor | Description: MOSFET PWRQFN 3X3 40V 0.0028OHM Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 23A, 10V Power Dissipation (Max): 35.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2936 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI075N04PT-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 400A; 35.7W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 48A Pulsed drain current: 400A Power dissipation: 35.7W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI075N04PT-AQ | Diotec Semiconductor | MOSFET, PowerQFN 3x3, 40V, 75A, 150C, N | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI075N04PT-AQ | Diotec Semiconductor | Description: MOSFET PWRQFN 3X3 40V 0.0028OHM Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 23A, 10V Power Dissipation (Max): 35.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2936 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI075N04PT-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, 40V, 75A, 150C, N, AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI075N08PQ | Diotec Semiconductor | DI075N08PQ | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI075N08PQ | Diotec Semiconductor | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| DI077P06D1 | DIOTEC SEMICONDUCTOR | DI077P06D1-DIO SMD P channel transistors | auf Bestellung 2498 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||||
| DI080N03PQ | Diotec Semiconductor | Description: MOSFET POWERQFN 5X6 N 30V Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7460 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI080N03PQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 160A; 78W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 75A Pulsed drain current: 160A Power dissipation: 78W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI080N03PQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 5x6, 30V, 80A, 150C, N | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI080N06PQ | Diotec Semiconductor | Description: MOSFET POWERQFN 5X6 N 65V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 40A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI080N06PQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 5x6, 65V, 105A, 150C, N | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI080N06PQ | Diotec Semiconductor | MOSFET, PowerQFN 5x6, 60V, 80A, 0, 80W | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI080N06PQ | Diotec Semiconductor | Description: MOSFET POWERQFN 5X6 N 65V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 40A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI080N06PQ-AQ | Diotec Semiconductor | N-Channel Power MOSFET AEC-Q | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI080N06PQ-AQ | Diotec Semiconductor | Trans MOSFET N-CH 60V 80A 8-Pin QFN EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI080N06PQ-AQ | DIOTEC | Description: DIOTEC - DI080N06PQ-AQ - Leistungs-MOSFET, n-Kanal, 65 V, 105 A, 0.003 ohm, QFN, Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI080N06PQ-AQ | Diotec Semiconductor | Description: MOSFET POWERQFN 5X6 N 65V 105A 0 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-QFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4128 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI080N06PQ-AQ | Diotec Semiconductor | DI080N06PQ-AQ | auf Bestellung 3750 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DI080N06PQ-AQ | DIOTEC | Description: DIOTEC - DI080N06PQ-AQ - Leistungs-MOSFET, n-Kanal, 65 V, 105 A, 0.003 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 65V rohsCompliant: Y-EX Dauer-Drainstrom Id: 105A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 65.8W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.003ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI080N06PQ-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 5x6, 65V, 105A, 150C, N, AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI080N06PQ-AQ | Diotec Semiconductor | Description: MOSFET POWERQFN 5X6 N 65V 105A 0 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-QFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4128 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 4820 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI080N10D1 | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 400A; 56.8W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 400A Power dissipation: 56.8W Case: DPAK Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI080N10D1 | Diotec Semiconductor | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| DI080N10PQ-AQ | Diotec Semiconductor | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| DI080N10PQ-AQ | Diotec Semiconductor | DC/DC ConvertersPower SuppliesDC Drives Power ToolsSynchronous RectifiersCommercial / industrial grade AEC-Q101 qualified | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI087N03D1-AQ | Diotec Semiconductor | MOSFETs MOSFET, DPAK, 30V, 87A, 150C, N, AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI0A35N06PGK | Diotec Semiconductor | DFN1006-3, N, 60V, 0.35A, 1.4?, 150C | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI0A35N06PGK | Diotec Semiconductor | Description: DI0A35N06PGK Packaging: Bulk Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Power Dissipation (Max): 223mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI0A35N06PGK | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 350mA; Idm: 1.2A; 223mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.35A Pulsed drain current: 1.2A Power dissipation: 223mW Case: DFN1006-3 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 1.9nC Kind of package: reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI0A35N06PGK-AQ | Diotec Semiconductor | Description: MOSFET, DFN1006-3, 60V, 0.35A, 1 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Power Dissipation (Max): 223mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN1006-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI0A35N06PGK-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 350mA; Idm: 1.2A; 223mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.35A Pulsed drain current: 1.2A Power dissipation: 223mW Case: DFN1006-3 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 1.9nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI0A35N06PGK-AQ | Diotec Semiconductor | Description: MOSFET, DFN1006-3, 60V, 0.35A, 1 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Power Dissipation (Max): 223mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN1006-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 5356 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI0A35N06PGK-AQ | Diotec Semiconductor | MOSFETs MOSFET, DFN1006-3, 60V, 0.35A, 150C, N, AEC-Q101 | auf Bestellung 8444 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI0A4N45SQ2 | Diotec Semiconductor | Description: MOSFET 2N-CH 450V 0.4A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI0A4N45SQ2 | Diotec Semiconductor | MOSFETs MOSFET, SO-8, 450V, 0.4A, 150C, N | auf Bestellung 3440 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DI0A4N45SQ2 | Diotec Semiconductor | Description: MOSFET 2N-CH 450V 0.4A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4165 Stücke: Lieferzeit 10-14 Tag (e) |
|