Produkte > AOT
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||
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| AOT-02RB | SRA Soldering Products | Description: BEVEL SOLDERING IRON TIP T-0.2RB Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Bevel Tip Type: Soldering Part Status: Active | auf Bestellung 13 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-05C | SRA Soldering Products | Description: BEVEL SOLDERING IRON TIP T-0.5C Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Bevel Tip Type: Soldering Part Status: Active | auf Bestellung 24 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-0603-2D-RB | auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| AOT-0603-B01-VB | 0603LED | auf Bestellung 16000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| AOT-0603-B01-VB | auf Bestellung 9300 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| AOT-0603-B110-H | AOT | SOD-523 | auf Bestellung 120000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| AOT-0603-BW3 | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| AOT-0603-W310-H | QFN?? | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| AOT-0603P-2D-RB1 | auf Bestellung 1800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| AOT-0603P-B01 | AOT | 2010+ 0603 | auf Bestellung 34000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| AOT-0603P-B01-S01 | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| AOT-0603P-B01A(-VC) | auf Bestellung 19600 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| AOT-0603P-G01-Z-HO | N/A | 08+ | auf Bestellung 4053 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| AOT-0603P-R01-S | auf Bestellung 4500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| AOT-0603P-W01-V | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| AOT-0603P-W01-V | 0603LED | auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| AOT-0603P2-B04-M01 | AOT | SMD | auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| AOT-08C | SRA Soldering Products | Description: BEVEL SOLDERING IRON TIP T-0.8C Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Bevel Tip Type: Soldering Part Status: Active | auf Bestellung 9 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-08D | SRA Soldering Products | Description: CHISEL SOLDERING IRON TIP 0.8D Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Chisel Tip Type: Soldering Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| AOT-1204-2D-YY02-H | N/A | SMD | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| AOT-1204-3D-RGB03-H | AOT | 08+ DIP8 | auf Bestellung 200 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| AOT-1206-3D-RGB03 | AOT | 2010+ 1206RGB | auf Bestellung 43000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| AOT-12D | SRA Soldering Products | Description: CHISEL SOLDERING IRON TIP 1.2D Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Chisel Tip Type: Soldering Part Status: Active | auf Bestellung 13 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-12LD | SRA Soldering Products | Description: CHISEL SOLDERING IRON TIP 1.2LD Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Chisel Tip Type: Soldering Part Status: Active | auf Bestellung 7 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-15CF | SRA Soldering Products | Description: BEVEL SOLDERING IRON TIP 1.5CF Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Bevel Tip Type: Soldering Part Status: Active | auf Bestellung 3 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-1608 HPW | AOT | 2010+ LED | auf Bestellung 68000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| AOT-1615-3D-RGB01 | AOT | auf Bestellung 5860 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| AOT-1615-3D-RGB01 | AOT | SMD | auf Bestellung 11660 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| AOT-1615RGB43 | AOT | 2010+ LED | auf Bestellung 43000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| AOT-16D | SRA Soldering Products | Description: CHISEL SOLDERING IRON TIP 1.6D Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Chisel Tip Type: Soldering Part Status: Active | auf Bestellung 11 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-18H | SRA Soldering Products | Description: BEVEL SOLDERING IRON TIP T-1.8H Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Bevel Tip Type: Soldering Part Status: Active | auf Bestellung 30 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-1C | SRA Soldering Products | Description: BEVEL SOLDERING IRON TIP T-1C Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Bevel Tip Type: Soldering Part Status: Active | auf Bestellung 14 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-1CF | SRA Soldering Products | Description: BEVEL SOLDERING IRON TIP T-1CF Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Bevel Tip Type: Soldering Part Status: Active | auf Bestellung 2 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| AOT-210C-1 | AOTAI INDUSTRY | Кабель "Вилка/Розетка"/Вилка; К-сть конт. = 8; OBDII; L = 1 м; 1 m | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT-24D | SRA Soldering Products | Description: CHISEL SOLDERING IRON TIP 2.4D Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Chisel Tip Type: Soldering Part Status: Active | auf Bestellung 25 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-2808-HPW-0301B(RW01-BI | 0603LED | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| AOT-2808-HPW-0301B(RW01-BIN9/BIN5) | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| AOT-2C | SRA Soldering Products | Description: BEVEL SOLDERING IRON TIP T-2C Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Bevel Tip Type: Soldering Part Status: Active | auf Bestellung 8 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-2CF | SRA Soldering Products | Description: BEVEL SOLDERING IRON TIP T-2CF Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Bevel Tip Type: Soldering Part Status: Active | auf Bestellung 10 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-2LD | SRA Soldering Products | Description: CHISEL SOLDERING IRON TIP 2LD Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Chisel Tip Type: Soldering Part Status: Active | auf Bestellung 13 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-3020BLW-0201-Z-2-Y | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| AOT-302OBLW-0201-Z-2-Y-H | QUNGCHUANG | 06+ | auf Bestellung 8010 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| AOT-3218HPW-0304B | AOT | 0520+ SMD | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| AOT-3228UV21B-ZO-HO | GH | LED | auf Bestellung 2825 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| AOT-32D | SRA Soldering Products | Description: CHISEL SOLDERING IRON TIP 3.2D Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Chisel Tip Type: Soldering Part Status: Active | auf Bestellung 20 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-32LD | SRA Soldering Products | Description: CHISEL SOLDERING IRON TIP 3.2LD Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Chisel Tip Type: Soldering Part Status: Active | auf Bestellung 31 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-3535HPW | AOT | 2010+ LED | auf Bestellung 32000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| AOT-3C | SRA Soldering Products | Description: BEVEL SOLDERING IRON TIP T-3C Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Bevel Tip Type: Soldering Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT-3CF | SRA Soldering Products | Description: BEVEL SOLDERING IRON TIP T-3CF Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Bevel Tip Type: Soldering Part Status: Active | auf Bestellung 10 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-4C | SRA Soldering Products | Description: BEVEL SOLDERING IRON TIP T-4C Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Bevel Tip Type: Soldering Part Status: Active | auf Bestellung 8 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-4CF | SRA Soldering Products | Description: BEVEL SOLDERING IRON TIP T-4CF Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Bevel Tip Type: Soldering Part Status: Active | auf Bestellung 8 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-AELBU-H | N/A | SMD | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| AOT-B | SRA Soldering Products | Description: CONICAL SOLDERING IRON TIP T-B Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Conical Tip Type: Soldering Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT-H | SRA Soldering Products | Description: BEVEL SOLDERING IRON TIP T-H Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Bevel Tip Type: Soldering Part Status: Active | auf Bestellung 10 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-I | SRA Soldering Products | Description: CONICAL SOLDERING IRON TIP T-I Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Conical Tip Type: Soldering Part Status: Active | auf Bestellung 23 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-K | SRA Soldering Products | Description: BEVEL SOLDERING IRON TIP T-K Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Bevel Tip Type: Soldering Part Status: Active | auf Bestellung 8 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-LB | SRA Soldering Products | Description: CONICAL SOLDERING IRON TIP T-LB Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Conical Tip Type: Soldering Part Status: Active | auf Bestellung 3 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-R | SRA Soldering Products | Description: BEVEL SOLDERING IRON TIP T-R Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Bevel Tip Type: Soldering Part Status: Active | auf Bestellung 7 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-RT | SRA Soldering Products | Description: BEVEL SOLDERING IRON TIP T-RT Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Bevel Tip Type: Soldering Part Status: Active | auf Bestellung 8 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-S3 | SRA Soldering Products | Description: CHISEL SOLDERING IRON TIP S3 Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Chisel Tip Type: Soldering Part Status: Active | auf Bestellung 17 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-S4 | SRA Soldering Products | Description: CONICAL SOLDERING IRON TIP T-S4 Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Conical Tip Type: Soldering Part Status: Active | auf Bestellung 22 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-S6 | SRA Soldering Products | Description: BEVEL SOLDERING IRON TIP T-S6 Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Bevel Tip Type: Soldering Part Status: Active | auf Bestellung 9 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-S7 | SRA Soldering Products | Description: BEVEL SOLDERING IRON TIP T-S7 Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Bevel Tip Type: Soldering Part Status: Active | auf Bestellung 8 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-S8 | SRA Soldering Products | Description: CONICAL SOLDERING IRON TIP T-S8 Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Conical Tip Type: Soldering Part Status: Active | auf Bestellung 3 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-S9 | SRA Soldering Products | Description: CHISEL SOLDERING IRON TIP T-S9 Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Chisel Tip Type: Soldering Part Status: Active | auf Bestellung 20 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-SB | SRA Soldering Products | Description: CONICAL SOLDERING IRON TIP T-SB Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Conical Tip Type: Soldering Part Status: Active | auf Bestellung 7 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-SI | SRA Soldering Products | Description: CONICAL SOLDERING IRON TIP T-SI Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Tip Shape: Conical Tip Type: Soldering Part Status: Active | auf Bestellung 10 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT-TAWS-23YY | AOT | 07+ | auf Bestellung 240000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| AOT-TAWS-23YY | AOT | 07+ | auf Bestellung 240000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| AOT002 | SRA Soldering Products | Description: SOLDERING TWEEZERS FOR AOYUE MOD Power (Watts): 60W Packaging: Bag For Use With/Related Products: 2702, 2702A+, 2703A+ Voltage - Input: 24V Type: Tweezers, Desoldering Workstand: Not Included Part Status: Active | auf Bestellung 3 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT004 | SRA Soldering Products | Description: SOLDERING TWEEZERS FOR AOYUE MOD Packaging: Bag Power (Watts): 60W Features: Ceramic Heating Element For Use With/Related Products: 968A+, 701A++, N Series Voltage - Input: 24V Type: Tweezers, Desoldering Workstand: Not Included Part Status: Active | auf Bestellung 6 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT005 | SRA Soldering Products | Description: SOLDERING TWEEZERS FOR AOYUE MOD Packaging: Bag Power (Watts): 60W Features: Ceramic Heating Element For Use With/Related Products: 738, 3210, N Series Voltage - Input: 24V Type: Tweezers, Desoldering Workstand: Not Included Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT007 | SRA Soldering Products | Description: SOLDERING TWEEZERS FOR AOYUE MOD Packaging: Bag Power (Watts): 60W Features: Ceramic Heating Element For Use With/Related Products: 866, 9378, N Series Voltage - Input: 24V Type: Tweezers, Desoldering Workstand: Not Included Part Status: Active | auf Bestellung 6 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT008-P | SRA Soldering Products | Description: SOLDERING TWEEZERS FOR AOYUE MOD Packaging: Bag Power (Watts): 60W Features: Ceramic Heating Element For Use With/Related Products: 937+ Pro, 9378 Pro, N Series Voltage - Input: 24V Type: Tweezers, Desoldering Workstand: Not Included Part Status: Active | auf Bestellung 3 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT095A60L | Alpha & Omega Semiconductor | N Channel Power Transistor | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT095A60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 38A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tj) Rds On (Max) @ Id, Vgs: 95mOhm @ 19A, 10V Power Dissipation (Max): 378W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT101AC | ПРОЧИЕ ИЗГОТОВИТЕЛИ | Оптопары АОТ101АС транзисторные, двухканальные DIP-8 | auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT10B60D | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 10A; 82W; TO220; Eoff: 0.07mJ; Eon: 0.26mJ Mounting: THT Pulsed collector current: 40A Turn-on time: 25ns Turn-off time: 80.8ns Type of transistor: IGBT Collector-emitter voltage: 600V Case: TO220 Gate-emitter voltage: ±20V Kind of package: tube Gate charge: 17.4nC Turn-on switching energy: 0.26mJ Turn-off switching energy: 0.07mJ Power dissipation: 82W Collector-emitter saturation voltage: 1.53V Collector current: 10A | auf Bestellung 449 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT10B60D | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 10A; 82W; TO220; Eoff: 0.07mJ; Eon: 0.26mJ Mounting: THT Pulsed collector current: 40A Turn-on time: 25ns Turn-off time: 80.8ns Type of transistor: IGBT Collector-emitter voltage: 600V Case: TO220 Gate-emitter voltage: ±20V Kind of package: tube Gate charge: 17.4nC Turn-on switching energy: 0.26mJ Turn-off switching energy: 0.07mJ Power dissipation: 82W Collector-emitter saturation voltage: 1.53V Collector current: 10A Anzahl je Verpackung: 1 Stücke | auf Bestellung 449 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT10B60D | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 20A 163W 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT10B60D | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 20A 163000mW 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT10B60D | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 20A 163W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 105 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 10ns/72ns Switching Energy: 260µJ (on), 70µJ (off) Test Condition: 400V, 10A, 30Ohm, 15V Gate Charge: 17.4 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 40 A Power - Max: 163 W | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT10B60D | ALPHA&OMEGA | 20A; 600V; 163W; IGBT w/ Diode AOT10B60D TAOT10b60d Anzahl je Verpackung: 10 Stücke | auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT10B60M1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 10A Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 10A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 5.5ns/61ns Switching Energy: 190µJ (on), 140µJ (off) Test Condition: 400V, 10A, 30Ohm, 15V Gate Charge: 14 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 25 A Power - Max: 83 W | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT10B65M1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 10A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 262 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 12ns/91ns Switching Energy: 180µJ (on), 130µJ (off) Test Condition: 400V, 10A, 30Ohm, 15V Gate Charge: 24 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 30 A Power - Max: 150 W | auf Bestellung 18 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT10B65M1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 20A 150000mW 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT10B65M1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 10A; 75W; TO220; Eoff: 0.13mJ; Eon: 0.18mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 10A Power dissipation: 75W Case: TO220 Gate-emitter voltage: ±30V Pulsed collector current: 30A Mounting: THT Gate charge: 24nC Kind of package: tube Turn-on time: 27ns Turn-off time: 137ns Collector-emitter saturation voltage: 1.6V Turn-off switching energy: 0.13mJ Turn-on switching energy: 0.18mJ Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT10B65M1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 10A; 75W; TO220; Eoff: 0.13mJ; Eon: 0.18mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 10A Power dissipation: 75W Case: TO220 Gate-emitter voltage: ±30V Pulsed collector current: 30A Mounting: THT Gate charge: 24nC Kind of package: tube Turn-on time: 27ns Turn-off time: 137ns Collector-emitter saturation voltage: 1.6V Turn-off switching energy: 0.13mJ Turn-on switching energy: 0.18mJ | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT10B65M2 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 10A; 75W; TO220; Eoff: 0.13mJ; Eon: 0.18mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 10A Power dissipation: 75W Case: TO220 Gate-emitter voltage: ±30V Pulsed collector current: 30A Mounting: THT Gate charge: 24nC Kind of package: tube Turn-on time: 27ns Turn-off time: 137ns Collector-emitter saturation voltage: 1.6V Turn-off switching energy: 0.13mJ Turn-on switching energy: 0.18mJ Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT10B65M2 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 10A; 75W; TO220; Eoff: 0.13mJ; Eon: 0.18mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 10A Power dissipation: 75W Case: TO220 Gate-emitter voltage: ±30V Pulsed collector current: 30A Mounting: THT Gate charge: 24nC Kind of package: tube Turn-on time: 27ns Turn-off time: 137ns Collector-emitter saturation voltage: 1.6V Turn-off switching energy: 0.13mJ Turn-on switching energy: 0.18mJ | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT10B65M2 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 10A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 262 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 12ns/91ns Switching Energy: 180µJ (on), 130µJ (off) Test Condition: 400V, 10A, 30Ohm, 15V Gate Charge: 24 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 30 A Power - Max: 150 W | auf Bestellung 737 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT10B65M2 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 20A 150000mW 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT10B65MQ2 | Alpha & Omega Semiconductor | Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT10B65MQ2 | Alpha & Omega Semiconductor Inc. | Description: IGBT 10A Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 106 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 12ns/91ns Switching Energy: 180µJ (on), 130µJ (off) Test Condition: 400V, 10A, 30Ohm, 15V Gate Charge: 24 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 30 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT10B65MQ2 | Alpha & Omega Semiconductor | Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT10N60 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.2A; 250W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.2A Power dissipation: 250W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 31nC Kind of channel: enhanced | auf Bestellung 251 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT10N60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT10N60 Produktcode: 188862 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| AOT10N60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT10N60 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.2A; 250W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.2A Power dissipation: 250W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 31nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 251 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT10N60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 10A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V | auf Bestellung 706 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT10N60 Produktcode: 116729 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| AOT10N60CL | Alpha & Omega Semiconductor Inc. | Description: N Packaging: Tape & Reel (TR) Part Status: Last Time Buy | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT10N60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT10N60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CHANNEL 600V 10A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT10N60_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 10A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT10N65 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 10A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT10N65 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6.2A; 250W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.2A Power dissipation: 250W Case: TO220 Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 27.7nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 585 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT10N65 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6.2A; 250W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.2A Power dissipation: 250W Case: TO220 Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 27.7nC Kind of channel: enhanced | auf Bestellung 585 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT10N65 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 10A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT10N65 | ALPHA&OMEGA | Transistor N-Channel MOSFET; 650V; 30V; 1Ohm; 10A; 250W; -55°C ~ 150°C; AOT10N65 TAOT10n65 Anzahl je Verpackung: 10 Stücke | auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT10N90 | Alpha & Omega Semiconductor | 600V,10A N-CHANNEL MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT10T60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT10T60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 10A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT10T60P | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CHANNEL 600V 10A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT10T60P | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT10T60PL | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 10A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT1100L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 130A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT1100L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 8A/130A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 130A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 500W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4833 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT110A Produktcode: 43609 | IC > Optokoppler (Optrone) Typ: Транзистор U-isol, kV: 500 V U ausg, V: 30 V | Produkt ist nicht verfügbar | ||||||||||||||||||
| AOT11C60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CHANNEL 600V 11A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT11C60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 11A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT11C60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT11C60PL | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 11A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT11C60PL | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT11N60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT11N60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT11N60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 11A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 5.5A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT11N70 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 700V 11A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT11N70 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 700V 11A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 870mOhm @ 5.5A, 10V Power Dissipation (Max): 271W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT11S60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 11A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V | auf Bestellung 1100 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT11S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT11S65L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT11S65L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 11A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 399mOhm @ 5.5A, 10V Power Dissipation (Max): 198W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT125A60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 28A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT125A60L | Alpha & Omega Semiconductor | N Channel Power Transistor | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT128Б Produktcode: 191537 | IC > Optokoppler (Optrone) | Produkt ist nicht verfügbar | ||||||||||||||||||
| AOT12N30L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 7.3A; 132W; TO220 Mounting: THT Case: TO220 Polarisation: unipolar Drain-source voltage: 300V Drain current: 7.3A Gate charge: 16nC Kind of channel: enhanced Gate-source voltage: ±30V On-state resistance: 0.42Ω Type of transistor: N-MOSFET Power dissipation: 132W | auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT12N30L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 300V 11.5A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT12N30L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 7.3A; 132W; TO220 Mounting: THT Case: TO220 Polarisation: unipolar Drain-source voltage: 300V Drain current: 7.3A Gate charge: 16nC Kind of channel: enhanced Gate-source voltage: ±30V On-state resistance: 0.42Ω Type of transistor: N-MOSFET Power dissipation: 132W Anzahl je Verpackung: 1 Stücke | auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT12N30L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N CH 300V 11.5A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT12N40L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 7A; 184W; TO220 Case: TO220 Mounting: THT Power dissipation: 184W Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 400V Drain current: 7A On-state resistance: 590mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | auf Bestellung 443 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT12N40L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 400V 11A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 590mOhm @ 6A, 10V Power Dissipation (Max): 184W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT12N40L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 7A; 184W; TO220 Case: TO220 Mounting: THT Power dissipation: 184W Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 400V Drain current: 7A On-state resistance: 590mΩ Type of transistor: N-MOSFET | auf Bestellung 443 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT12N40L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 400V 11A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT12N50 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 12A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT12N50 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT12N50 | ALPHA&OMEGA | Transistor N-Channel MOSFET; 500V; 30V; 520mOhm; 12A; 250W; -55°C ~ 150°C; AOT12N50 TAOT12n50 Anzahl je Verpackung: 10 Stücke | auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT12N50 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8.4A; 250W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8.4A Power dissipation: 250W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.52Ω Mounting: THT Gate charge: 37nC Kind of channel: enhanced | auf Bestellung 603 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT12N50 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT12N50 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8.4A; 250W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8.4A Power dissipation: 250W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.52Ω Mounting: THT Gate charge: 37nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 603 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT12N50 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT12N60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 12A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT12N60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT12N60 | ALPHA&OMEGA | Transistor N-Channel MOSFET; 600V; 30V; 550mOhm; 12A; 278W; -55°C ~ 150°C; AOT12N60 TAOT12n60 Anzahl je Verpackung: 10 Stücke | auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT12N60FD | Alpha & Omega Semiconductor Inc. | Description: N Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT12N60FD | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT12N60FDL | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 12A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT12N60_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 12A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT12N65 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 12A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT12N65 | Alpha & Omega Semiconductor | auf Bestellung 970 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| AOT12N65 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT12N65_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 12A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT13N50 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8.5A; 250W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8.5A Power dissipation: 250W Case: TO220 Gate-source voltage: ±30V On-state resistance: 510mΩ Mounting: THT Gate charge: 30.7nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 1055 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT13N50 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8.5A; 250W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8.5A Power dissipation: 250W Case: TO220 Gate-source voltage: ±30V On-state resistance: 510mΩ Mounting: THT Gate charge: 30.7nC Kind of channel: enhanced | auf Bestellung 1055 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT13N50 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 13A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 510mOhm @ 6.5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT13N50 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT13N50 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT1404L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 40V 220A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT1404L Produktcode: 177805 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| AOT1404L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 157A; 208W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 157A Power dissipation: 208W Case: TO220 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: THT Gate charge: 71nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 867 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT1404L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 157A; 208W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 157A Power dissipation: 208W Case: TO220 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: THT Gate charge: 71nC Kind of channel: enhanced | auf Bestellung 867 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT1404L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 40V 15A/220A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 220A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 417W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT14N50 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 278W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Power dissipation: 278W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 42.8nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT14N50 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 278W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Power dissipation: 278W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 42.8nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT14N50 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 14A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2297 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT14N50 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT14N50FD | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 14A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 470mOhm @ 7A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT15B60D | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 30A 167W 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT15B60D | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 30A 167000mW 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT15B60D | ALPHA&OMEGA | 30A; 600V; 167W; IGBT w/ Diode AOT15B60D TAOT15b60d Anzahl je Verpackung: 10 Stücke | auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT15B60D | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 30A 167W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 196 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 15A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 21ns/73ns Switching Energy: 420µJ (on), 110µJ (off) Test Condition: 400V, 15A, 20Ohm, 15V Gate Charge: 25.4 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 167 W | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT15B60D | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 15A; 83.3W; TO220; Eoff: 0.11mJ; Eon: 0.42mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 83.3W Case: TO220 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 25.4nC Kind of package: tube Turn-on time: 40ns Turn-off time: 83ns Collector-emitter saturation voltage: 1.6V Turn-off switching energy: 0.11mJ Turn-on switching energy: 0.42mJ | auf Bestellung 988 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT15B60D | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 15A; 83.3W; TO220; Eoff: 0.11mJ; Eon: 0.42mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 83.3W Case: TO220 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 25.4nC Kind of package: tube Turn-on time: 40ns Turn-off time: 83ns Collector-emitter saturation voltage: 1.6V Turn-off switching energy: 0.11mJ Turn-on switching energy: 0.42mJ Anzahl je Verpackung: 1 Stücke | auf Bestellung 988 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT15B65M1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 15A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 317 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 13ns/116ns Switching Energy: 290µJ (on), 200µJ (off) Test Condition: 400V, 15A, 20Ohm, 15V Gate Charge: 32 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 214 W | auf Bestellung 297 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT15B65M1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 15A; 107W; TO220; Eoff: 0.2mJ; Eon: 0.29mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 107W Case: TO220 Gate-emitter voltage: ±30V Pulsed collector current: 45A Mounting: THT Gate charge: 32nC Kind of package: tube Turn-on time: 33ns Turn-off time: 108ns Collector-emitter saturation voltage: 1.7V Turn-off switching energy: 0.2mJ Turn-on switching energy: 0.29mJ | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT15B65M1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 30A 214000mW 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT15B65M1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 15A; 107W; TO220; Eoff: 0.2mJ; Eon: 0.29mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 107W Case: TO220 Gate-emitter voltage: ±30V Pulsed collector current: 45A Mounting: THT Gate charge: 32nC Kind of package: tube Turn-on time: 33ns Turn-off time: 108ns Collector-emitter saturation voltage: 1.7V Turn-off switching energy: 0.2mJ Turn-on switching energy: 0.29mJ Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT15B65M3 | Alpha & Omega Semiconductor | 650V, 15A Alpha IGBT With soft and fast recovery anti-parallel diode | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT15B65M3 | ALPHA & OMEGA SEMICONDUCTOR | AOT15B65M3 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT15B65MQ1 | Alpha & Omega Semiconductor | Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT15B65MQ1 | Alpha & Omega Semiconductor | Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT15B65MQ1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 15A Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 106 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 15ns/94ns Switching Energy: 290µJ (on), 200µJ (off) Test Condition: 400V, 15A, 20Ohm, 15V Gate Charge: 32 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 214 W | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT15S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT15S60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 15A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT15S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT15S65L Produktcode: 196122 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| AOT15S65L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 15A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 841 pF @ 100 V | auf Bestellung 227 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT1606L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 178A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT1606L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 12A/178A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 178A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 417W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT1608L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 11A/140A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3690 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT1608L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 166W; TO220 Mounting: THT Power dissipation: 166W Polarisation: unipolar Gate charge: 69nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO220 Drain-source voltage: 60V Drain current: 100A On-state resistance: 7.6mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | auf Bestellung 302 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT1608L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 140A 3-Pin(3+Tab) TO-220 Tube | auf Bestellung 950 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT1608L | ALPHA&OMEGA | Transistor N-Channel MOSFET; 60V; 20V; 13,2mOhm; 140A; 333W; -55°C ~ 175°C; AOT1608L TAOT1608l Anzahl je Verpackung: 10 Stücke | auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT1608L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 140A 3-Pin(3+Tab) TO-220 Tube | auf Bestellung 950 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT1608L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 140A 3-Pin(3+Tab) TO-220 Tube | auf Bestellung 950 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOT1608L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 166W; TO220 Mounting: THT Power dissipation: 166W Polarisation: unipolar Gate charge: 69nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO220 Drain-source voltage: 60V Drain current: 100A On-state resistance: 7.6mΩ Type of transistor: N-MOSFET | auf Bestellung 302 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT1608L; 140A; 60V; 333W; 0.0076R; N-канальний; Корпус: TO-220; ALPHA & OMEGA | auf Bestellung 123 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| AOT160A60L | Alpha & Omega Semiconductor | N Channel Power Transistor | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT160A60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 24A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT16N50 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT16N50 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT16N50 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 16A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 370mOhm @ 8A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2297 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT16N50 Produktcode: 128900 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| AOT16N50 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 278W; TO220 Mounting: THT Drain-source voltage: 500V Drain current: 11A On-state resistance: 370mΩ Type of transistor: N-MOSFET Power dissipation: 278W Polarisation: unipolar Gate charge: 42.8nC Kind of channel: enhanced Gate-source voltage: ±30V Case: TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT16N50 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 278W; TO220 Mounting: THT Drain-source voltage: 500V Drain current: 11A On-state resistance: 370mΩ Type of transistor: N-MOSFET Power dissipation: 278W Polarisation: unipolar Gate charge: 42.8nC Kind of channel: enhanced Gate-source voltage: ±30V Case: TO220 Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT190A60CL | Alpha & Omega Semiconductor | N Channel Power Transistor | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT190A60CL | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 20A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT190A60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 7.6A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT1N60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 1.3A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc) Rds On (Max) @ Id, Vgs: 9Ohm @ 650mA, 10V Power Dissipation (Max): 41.7W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V | auf Bestellung 1220 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT1N60 | ALPHA&OMEGA | Transistor N-Channel MOSFET; 600V; 30V; 9Ohm; 1,3A; 41,7W; -55°C ~ 150°C; AOT1N60 TAOT1n60 Anzahl je Verpackung: 25 Stücke | auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT1N60 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.9A; 41.7W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.9A Power dissipation: 41.7W Case: TO220 Gate-source voltage: ±30V On-state resistance: 9Ω Mounting: THT Gate charge: 6.1nC Kind of channel: enhanced | auf Bestellung 772 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT1N60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 1.3A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT1N60 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.9A; 41.7W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.9A Power dissipation: 41.7W Case: TO220 Gate-source voltage: ±30V On-state resistance: 9Ω Mounting: THT Gate charge: 6.1nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 772 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT20B65M1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 40A 227W 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT20B65M1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 20A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT20B65M1 | ALPHA & OMEGA SEMICONDUCTOR | AOT20B65M1 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT20B65M1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 40A 227000mW 3-Pin(3+Tab) TO-220 Tube | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOT20C60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 20A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Power Dissipation (Max): 463W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT20C60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT20C60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 20A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Power Dissipation (Max): 463W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT20C60PL | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT20C60PL | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 20A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V Power Dissipation (Max): 463W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3607 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT20N25L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 250V 20A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 10A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1028 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT20N25L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 14A; 208W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 14A Power dissipation: 208W Case: TO220 Gate-source voltage: ±30V On-state resistance: 170mΩ Mounting: THT Gate charge: 20nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT20N25L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 250V 20A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT20N25L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 14A; 208W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 14A Power dissipation: 208W Case: TO220 Gate-source voltage: ±30V On-state resistance: 170mΩ Mounting: THT Gate charge: 20nC Kind of channel: enhanced | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT20N60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 T/R | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOT20N60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 20A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 370mOhm @ 10A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT20N60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT20S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT20S60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 20A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V Power Dissipation (Max): 266W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V | auf Bestellung 2789 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT20S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT20S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT210L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 105A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT210L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 20A/105A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2140L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 195A; 136W; TO220 Mounting: THT Case: TO220 Polarisation: unipolar Power dissipation: 136W Type of transistor: N-MOSFET On-state resistance: 1.5mΩ Drain current: 195A Drain-source voltage: 40V Gate charge: 54nC Kind of channel: enhanced Gate-source voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2140L | Alpha & Omega Semiconductor | 40V N-Channel AlphaSGT TM | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2140L | Alpha & Omega Semiconductor Inc. | Description: N Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 195A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V Power Dissipation (Max): 8.3W (Ta), 272W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9985 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2140L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 195A; 136W; TO220 Mounting: THT Case: TO220 Polarisation: unipolar Power dissipation: 136W Type of transistor: N-MOSFET On-state resistance: 1.5mΩ Drain current: 195A Drain-source voltage: 40V Gate charge: 54nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2142L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 40V 50A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2142L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CHANNEL 40V 120A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2142L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 156W; TO220 Power dissipation: 156W Gate charge: 45nC Polarisation: unipolar Drain current: 120A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: TO220 On-state resistance: 1.9mΩ Mounting: THT Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2142L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 40V 50A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2142L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 156W; TO220 Power dissipation: 156W Gate charge: 45nC Polarisation: unipolar Drain current: 120A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: TO220 On-state resistance: 1.9mΩ Mounting: THT | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2144L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 93W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 93W Case: TO220 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Gate charge: 28nC Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2144L | Alpha & Omega Semiconductor | N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2144L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 93W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 93W Case: TO220 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Gate charge: 28nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2144L | Alpha & Omega Semiconductor | N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2144L | Alpha & Omega Semiconductor Inc. | Description: N Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 205A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V Power Dissipation (Max): 8.3W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5225 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2146L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 47.5W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 47.5W Case: TO220 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: THT Gate charge: 20nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2146L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 40V 42A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2146L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 47.5W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 47.5W Case: TO220 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: THT Gate charge: 20nC Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT22N50L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 22A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 11A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT22N50L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 417W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 15A Power dissipation: 417W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Gate charge: 69nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 495 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT22N50L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 417W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 15A Power dissipation: 417W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Gate charge: 69nC Kind of channel: enhanced | auf Bestellung 495 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT22N50L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT22N50L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT240L | ALPHA&OMEGA | Transistor N-Channel MOSFET; 40V; 20V; 4,7mOhm; 105A; 176W; -55°C ~ 175°C; AOT240L TAOT240l Anzahl je Verpackung: 10 Stücke | auf Bestellung 7 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT240L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 82A; 88W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 82A Power dissipation: 88W Case: TO220 Gate-source voltage: ±20V On-state resistance: 2.9mΩ Mounting: THT Gate charge: 22nC Kind of channel: enhanced | auf Bestellung 611 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT240L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 40V 105A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT240L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 40V 105A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT240L | ALPHA&OMEGA | Transistor N-Channel MOSFET; 40V; 20V; 4,7mOhm; 105A; 176W; -55°C ~ 175°C; AOT240L TAOT240l Anzahl je Verpackung: 10 Stücke | auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT240L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 40V 20A/105A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 105A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V Power Dissipation (Max): 1.9W (Ta), 176W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V | auf Bestellung 1660 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT240L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 82A; 88W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 82A Power dissipation: 88W Case: TO220 Gate-source voltage: ±20V On-state resistance: 2.9mΩ Mounting: THT Gate charge: 22nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 611 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT2500L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 150V 11.5/152A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 152A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 75 V | auf Bestellung 2383 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT2500L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 107A; 187.5W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 107A Power dissipation: 187.5W Case: TO220 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: THT Gate charge: 97nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 882 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT2500L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 107A; 187.5W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 107A Power dissipation: 187.5W Case: TO220 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: THT Gate charge: 97nC Kind of channel: enhanced | auf Bestellung 882 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT2500L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 150V 152A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2500L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 150V 152A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2502L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 150V 18.5/106A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 106A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 8.3W (Ta), 277W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3010 pF @ 75 V | auf Bestellung 900 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT2502L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 150V 18.5A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2502L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 150V 18.5A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT254L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 150V 32A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT254L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 22.5A; 62.5W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 22.5A Power dissipation: 62.5W Case: TO220 Gate-source voltage: ±20V On-state resistance: 46mΩ Mounting: THT Gate charge: 12nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT254L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 22.5A; 62.5W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 22.5A Power dissipation: 62.5W Case: TO220 Gate-source voltage: ±20V On-state resistance: 46mΩ Mounting: THT Gate charge: 12nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT254L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 150V 4.2A/32A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT25S65L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 25A 3-Pin(3+Tab) TO-220 T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT25S65L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 25A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 12.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 26.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1278 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT25S65L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 25A 3-Pin(3+Tab) TO-220 T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT2606L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 56A; 57.5W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 56A Power dissipation: 57.5W Case: TO220 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: THT Gate charge: 22nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2606L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 72A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2606L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 13A/72A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 72A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2606L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 56A; 57.5W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 56A Power dissipation: 57.5W Case: TO220 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: THT Gate charge: 22nC Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2608L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 72A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2608L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 11A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT260L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 20A/140A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 1.9W (Ta), 330W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 30 V | auf Bestellung 3440 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT260L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 140A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT260L | ALPHA & OMEGA SEMICONDUCTOR | AOT260L THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT260L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 140A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT260L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 140A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2610L | ALPHA & OMEGA SEMICONDUCTOR | AOT2610L THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2610L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 9A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2618L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 7A/23A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 23A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 41.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V | auf Bestellung 328 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT2618L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 7A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2618L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 18A; 20.5W; TO220 Drain-source voltage: 60V Drain current: 18A On-state resistance: 19mΩ Type of transistor: N-MOSFET Power dissipation: 20.5W Polarisation: unipolar Gate charge: 6nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO220 Anzahl je Verpackung: 1 Stücke | auf Bestellung 496 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT2618L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 18A; 20.5W; TO220 Drain-source voltage: 60V Drain current: 18A On-state resistance: 19mΩ Type of transistor: N-MOSFET Power dissipation: 20.5W Polarisation: unipolar Gate charge: 6nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO220 | auf Bestellung 496 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT262L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 167W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 110A Power dissipation: 167W Case: TO220 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Gate charge: 95nC Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT262L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 167W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 110A Power dissipation: 167W Case: TO220 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Gate charge: 95nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT262L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 140A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT262L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 20A/140A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT264L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 140A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT264L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 19A/140A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT264L | ALPHA & OMEGA SEMICONDUCTOR | AOT264L THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT266L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 140A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT266L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 140A 3-Pin(3+Tab) TO-220 T/R | auf Bestellung 360000 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT266L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 134W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 110A Power dissipation: 134W Case: TO220 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: THT Gate charge: 65nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 81 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT266L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 140A 3-Pin(3+Tab) TO-220 T/R | auf Bestellung 360000 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT266L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 140A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT266L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 134W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 110A Power dissipation: 134W Case: TO220 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: THT Gate charge: 65nC Kind of channel: enhanced | auf Bestellung 81 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT266L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 18A/140A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 268W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5650 pF @ 30 V | auf Bestellung 865 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT270AL | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 110A; 250W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 110A Power dissipation: 250W Case: TO220 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: THT Gate charge: 147nC Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT270AL | Alpha & Omega Semiconductor | Trans MOSFET N-CH 75V 140A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT270AL | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 110A; 250W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 110A Power dissipation: 250W Case: TO220 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: THT Gate charge: 147nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT270AL | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 75V 21.5A/140A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 500W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10830 pF @ 37.5 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT270AL | Alpha & Omega Semiconductor | Trans MOSFET N-CH 75V 140A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT270L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 75V 21.5A/140A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 500W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10350 pF @ 37.5 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT270L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 75V 140A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT27S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 27A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT27S60L Produktcode: 122782 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| AOT27S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 27A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT27S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 27A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT27S60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 27A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 13.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 100 V | auf Bestellung 3794 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT27S60L_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 13.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT280A60L | Alpha & Omega Semiconductor | N Channel Power Transistor | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT280A60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 14A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT280L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 166W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 110A Power dissipation: 166W Case: TO220 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: THT Gate charge: 160nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT280L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 80V 20.5A/140A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.5A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11135 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT280L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 166W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 110A Power dissipation: 166W Case: TO220 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: THT Gate charge: 160nC Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT280L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 80V 140A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT280L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 80V 140A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT280L Produktcode: 154540 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| AOT282L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 80V 18.5A/105A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT282L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 82A; 136W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 82A Power dissipation: 136W Case: TO220 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: THT Gate charge: 58nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 594 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT282L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 80V 105A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT282L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 82A; 136W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 82A Power dissipation: 136W Case: TO220 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: THT Gate charge: 58nC Kind of channel: enhanced | auf Bestellung 594 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT284L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 80V 16A/105A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 105A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5154 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT284L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 80V 105A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT286L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 80V 70A 3-Pin(3+Tab) TO-220 | auf Bestellung 3996 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT286L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N CH 80V 13A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT286L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 80V 70A 3-Pin(3+Tab) TO-220 | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOT286L | ALPHA & OMEGA SEMICONDUCTOR | AOT286L THT N channel transistors | auf Bestellung 709 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT286L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 80V 70A 3-Pin(3+Tab) TO-220 | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT288L | ALPHA & OMEGA SEMICONDUCTOR | AOT288L THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT288L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 80V 10.5A/46A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 93.5W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2904 | Alpha & Omega Semiconductor | 100V N-Channel AlphaSGT TM | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2904 Produktcode: 193039 | Verschiedene Bauteile > Verschiedene Bauteile 1 | Produkt ist nicht verfügbar | ||||||||||||||||||
| AOT2904 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 120A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V Power Dissipation (Max): 326W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7085 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2906 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Current - Continuous Drain (Id) @ 25°C: 122A (Tc) Supplier Device Package: TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT290L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT290L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 250W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Power dissipation: 250W Case: TO220 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: THT Gate charge: 90nC Kind of channel: enhanced | auf Bestellung 393 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT290L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-220 T/R | auf Bestellung 31585 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT290L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-220 T/R | auf Bestellung 31000 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT290L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT290L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 18A/140A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 500W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9550 pF @ 50 V | auf Bestellung 1960 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT290L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 250W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Power dissipation: 250W Case: TO220 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: THT Gate charge: 90nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 393 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT2910L | ALPHA&OMEGA | Transistor N-Channel MOSFET; 100V; 20V; 43mOhm; 30A; 50W; -55°C ~ 175°C; AOT2910L TAOT2910l Anzahl je Verpackung: 10 Stücke | auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT2910L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 30A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2910L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N CH 100V 6A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2910L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 21A; 25W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 21A Power dissipation: 25W Case: TO220 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: THT Gate charge: 7nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 260 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT2910L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 21A; 25W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 21A Power dissipation: 25W Case: TO220 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: THT Gate charge: 7nC Kind of channel: enhanced | auf Bestellung 260 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT2916L | ALPHA&OMEGA | Transistor N-Channel MOSFET; 100V; 20V; 62mOhm; 23A; 41,5W; -55°C ~ 175°C; AOT2916L TAOT2916l Anzahl je Verpackung: 10 Stücke | auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT2916L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 23A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2916L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N CH 100V 5A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 23A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V Power Dissipation (Max): 2.1W (Ta), 41.5W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2918L | ALPHA&OMEGA | Transistor N-Channel MOSFET; 100V; 20V; 12mOhm; 90A; 267W; -55°C ~ 175°C; AOT2918L TAOT2918l Anzahl je Verpackung: 10 Stücke | auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT2918L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 90A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2918L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 13A/90A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 267W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT292L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 105A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT292L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 105A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 105A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT292L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 105A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT292L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 82A; 150W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 82A Power dissipation: 150W Case: TO220 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Gate charge: 90nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT292L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 82A; 150W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 82A Power dissipation: 150W Case: TO220 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Gate charge: 90nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT296L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 54W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Power dissipation: 54W Case: TO220 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: THT Gate charge: 16.5nC Kind of channel: enhanced | auf Bestellung 735 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT296L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 54W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Power dissipation: 54W Case: TO220 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: THT Gate charge: 16.5nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 735 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT296L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 70A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT296L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 9.5A/70A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT296L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 70A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT298L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 58A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT298L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 9A/58A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT29S50L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 29A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 14.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 26.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2N60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 2A TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT2N60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT360A70L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 700V 12A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 6A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT360A70L | Alpha & Omega Semiconductor | N Channel Power Transistor | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT360A70L | Alpha & Omega Semiconductor | N Channel Power Transistor | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT380A60CL | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 11A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Power Dissipation (Max): 131W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 100 V | auf Bestellung 534 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT380A60L | Alpha & Omega Semiconductor | N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT380A60L | Alpha & Omega Semiconductor | N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT380A60L | ALPHA & OMEGA SEMICONDUCTOR | AOT380A60L THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT380A60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 11A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT3N100 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1.8A; 132W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.8A Power dissipation: 132W Case: TO220 Gate-source voltage: ±30V On-state resistance: 6Ω Mounting: THT Gate charge: 15nC Kind of channel: enhanced | auf Bestellung 616 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT3N100 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1.8A; 132W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.8A Power dissipation: 132W Case: TO220 Gate-source voltage: ±30V On-state resistance: 6Ω Mounting: THT Gate charge: 15nC Kind of channel: enhanced | auf Bestellung 616 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT3N100 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 1000V 2.8A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 10V Power Dissipation (Max): 132W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT3N50 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 3A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT3N50 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 3A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT3N60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 2.5A TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT404 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 105V 40A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 105 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2445 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT410L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 12A/150A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 1.9W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7950 pF @ 50 V | auf Bestellung 3666 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT410L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT410L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 167W; TO220 Polarisation: unipolar Mounting: THT Type of transistor: N-MOSFET Power dissipation: 167W Gate charge: 107nC Kind of channel: enhanced Gate-source voltage: ±25V Case: TO220 Drain-source voltage: 100V Drain current: 108A On-state resistance: 6.5mΩ | auf Bestellung 518 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT410L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 167W; TO220 Polarisation: unipolar Mounting: THT Type of transistor: N-MOSFET Power dissipation: 167W Gate charge: 107nC Kind of channel: enhanced Gate-source voltage: ±25V Case: TO220 Drain-source voltage: 100V Drain current: 108A On-state resistance: 6.5mΩ Anzahl je Verpackung: 1 Stücke | auf Bestellung 518 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT410L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT410L | ALPHA&OMEGA | Transistor N-Channel MOSFET; 100V; 25V; 11mOhm; 150A; 333W; -55°C ~ 175°C; AOT410L TAOT410l Anzahl je Verpackung: 5 Stücke | auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT412 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 60A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT412 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 75W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 44A Power dissipation: 75W Case: TO220 Gate-source voltage: ±25V On-state resistance: 15.8mΩ Mounting: THT Gate charge: 45nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 227 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT412 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 8.2A/60A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 15.8mOhm @ 20A, 10V Power Dissipation (Max): 2.6W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT412 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 60A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT412 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 75W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 44A Power dissipation: 75W Case: TO220 Gate-source voltage: ±25V On-state resistance: 15.8mΩ Mounting: THT Gate charge: 45nC Kind of channel: enhanced | auf Bestellung 227 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT414 | ALPHA & OMEGA SEMICONDUCTOR | AOT414 THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT414 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 5.6A/43A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT414 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 5.6A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT414 | ALPHA&OMEGA | Transistor N-Channel MOSFET; 100V; 25V; 43mOhm; 43A; 115W; -55°C ~ 175°C; AOT414 TAOT414 Anzahl je Verpackung: 10 Stücke | auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT416 Produktcode: 62537 | Verschiedene Bauteile > Verschiedene Bauteile 2 | Produkt ist nicht verfügbar | ||||||||||||||||||
| AOT416 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 4.7A/42A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT416 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT416L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 4.7A/42A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT416_002 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT418L Produktcode: 149796 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| AOT418L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 105A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT418L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 9.5A/105A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 105A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT418L_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 9.5A/105A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT424 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 110A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT424 | ALPHA&OMEGA | Transistor N-Channel MOSFET; 30V; 20V; 6mOhm; 110A; 100W; -55°C ~ 175°C; AOT424 TAOT424 Anzahl je Verpackung: 10 Stücke | auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT424 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 110A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT424 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 110A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT428 | AO | 07+ 220 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| AOT42S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 37A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT42S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 37A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT42S60L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 417W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Power dissipation: 417W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.31Ω Mounting: THT Gate charge: 40nC Kind of channel: enhanced | auf Bestellung 160 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT42S60L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 417W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Power dissipation: 417W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.31Ω Mounting: THT Gate charge: 40nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 160 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT42S60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 37A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 21A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2154 pF @ 100 V | auf Bestellung 16990 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT42S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 37A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT430 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 78A; 134W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 78A Power dissipation: 134W Case: TO220 Gate-source voltage: ±25V On-state resistance: 11.5mΩ Mounting: THT Gate charge: 114nC Kind of channel: enhanced | auf Bestellung 191 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT430 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 78A; 134W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 78A Power dissipation: 134W Case: TO220 Gate-source voltage: ±25V On-state resistance: 11.5mΩ Mounting: THT Gate charge: 114nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 191 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT430 Produktcode: 191510 | Verschiedene Bauteile > Verschiedene Bauteile 1 | Produkt ist nicht verfügbar | ||||||||||||||||||
| AOT430 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 75V 80A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 30A, 10V Power Dissipation (Max): 268W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT430 | ALPHA&OMEGA | Transistor N-Channel MOSFET; 75V; 25V; 19mOhm; 80A; 268W; -55°C ~ 175°C; AOT430 TAOT430 Anzahl je Verpackung: 10 Stücke | auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT430 | ALPHA&OMEGA | Transistor N-Channel MOSFET; 75V; 25V; 19mOhm; 80A; 268W; -55°C ~ 175°C; AOT430 TAOT430 Anzahl je Verpackung: 10 Stücke | auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT430 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT430 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT440 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 40V 105A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT440 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 40V 15.5A/105A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT4531-1 | Amphenol Fiber Systems International | Description: TERMINI, LUMIERE SHORT BOOT Packaging: Bulk Connector Type: Plug Mounting Type: Free Hanging (In-Line) Cable Diameter: 2.5mm Fastening Type: Push-Pull Mode: Multimode Connector Style: ST Simplex/Duplex: Simplex Fiber Core Diameter: 50µm/62.5µm Fiber Cladding Diameter: 125µm Part Status: Active | auf Bestellung 11 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT4531-1 | Amphenol FSI | Fibre Optic Connectors TERMINI, LUMIERE SHORT BOOT | auf Bestellung 25 Stücke: Lieferzeit 14-28 Tag (e) |
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| AOT4531-11 | Amphenol FSI | Fibre Optic Connectors LUMIERE TERMINI, SHORT BOOT, | auf Bestellung 19 Stücke: Lieferzeit 14-28 Tag (e) |
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| AOT4531-11 | Amphenol Fiber Systems International | Description: LUMIERE TERMINI, SHORT BOOT, Packaging: Bulk Connector Type: Plug Mounting Type: Free Hanging (In-Line) Cable Diameter: 2.5mm Fastening Type: Push-Pull Mode: Singlemode Connector Style: ST Simplex/Duplex: Simplex Fiber Core Diameter: 9µm Fiber Cladding Diameter: 125µm Part Status: Active | auf Bestellung 25 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT4531-12 | Amphenol FSI | Fibre Optic Connectors LUMIERE TERMINI ASSY, LONG BOOT | auf Bestellung 25 Stücke: Lieferzeit 14-28 Tag (e) |
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| AOT4531-12 | Amphenol Fiber Systems International | Description: LUMIERE TERMINI ASSY, LONG BOOT Packaging: Bulk Connector Type: Plug Mounting Type: Free Hanging (In-Line) Cable Diameter: 2.5mm Fastening Type: Push-Pull Mode: Singlemode Connector Style: ST Simplex/Duplex: Simplex Fiber Core Diameter: 9µm Fiber Cladding Diameter: 125µm Part Status: Active | auf Bestellung 25 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT4531-2 | Amphenol Fiber Systems International | Description: TERMINI, LUMIERE LONG BOOT, Packaging: Bulk Connector Type: Plug Mounting Type: Free Hanging (In-Line) Cable Diameter: 2.5mm Fastening Type: Push-Pull Mode: Multimode Connector Style: ST Simplex/Duplex: Simplex Fiber Core Diameter: 50µm/62.5µm Fiber Cladding Diameter: 125µm Part Status: Active | auf Bestellung 25 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT4531-2 | Amphenol FSI | Fibre Optic Connectors TERMINI, LUMIERE LONG BOOT, | auf Bestellung 25 Stücke: Lieferzeit 14-28 Tag (e) |
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| AOT4531-5 | Amphenol FSI | Fibre Optic Connectors TERMINI, LUMIERE W/O BOOT | auf Bestellung 25 Stücke: Lieferzeit 14-28 Tag (e) |
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| AOT4531-5 | Amphenol Fiber Systems International | Description: TERMINI, LUMIERE W/O BOOT Packaging: Bulk Connector Type: Plug Mounting Type: Free Hanging (In-Line) Cable Diameter: 2.5mm Fastening Type: Push-Pull Mode: Multimode Connector Style: ST Simplex/Duplex: Simplex Fiber Core Diameter: 50µm/62.5µm Fiber Cladding Diameter: 125µm Part Status: Active | auf Bestellung 25 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT460 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 85A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT460 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 85A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V Power Dissipation (Max): 268W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT460 | Alpha & Omega Semiconductor | auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| AOT460_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 85A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V Power Dissipation (Max): 268W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT460_002 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 85A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V Power Dissipation (Max): 268W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT462 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 70A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT462 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 70A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT462L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 35A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT462L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 7A/35A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT462_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT462_002 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT470 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 78A; 134W; TO220 Drain-source voltage: 75V Drain current: 78A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 134W Polarisation: unipolar Case: TO220 Gate charge: 114nC Mounting: THT Kind of channel: enhanced Gate-source voltage: ±25V Anzahl je Verpackung: 1 Stücke | auf Bestellung 12 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT470 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 75V 10A/100A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V Power Dissipation (Max): 2.1W (Ta), 268W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT470 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 75V 100A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT470 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 78A; 134W; TO220 Drain-source voltage: 75V Drain current: 78A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 134W Polarisation: unipolar Case: TO220 Gate charge: 114nC Mounting: THT Kind of channel: enhanced Gate-source voltage: ±25V | auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT470 Produktcode: 144006 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| AOT470 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 75V 100A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT472 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 75V 10A/140A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 30A, 10V Power Dissipation (Max): 1.9W (Ta), 417W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT472 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 75V 10A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT474 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 75V 9A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT474 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 75V 9A/127A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT474_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 75V TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT474_002 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 75V 9A/127A TO220-3 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT480L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 134A; 167W; TO220 Mounting: THT Gate charge: 116nC Kind of channel: enhanced Gate-source voltage: ±25V Case: TO220 Drain-source voltage: 80V Drain current: 134A On-state resistance: 4.5mΩ Type of transistor: N-MOSFET Power dissipation: 167W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | auf Bestellung 625 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT480L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 80V 180A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT480L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 134A; 167W; TO220 Mounting: THT Gate charge: 116nC Kind of channel: enhanced Gate-source voltage: ±25V Case: TO220 Drain-source voltage: 80V Drain current: 134A On-state resistance: 4.5mΩ Type of transistor: N-MOSFET Power dissipation: 167W Polarisation: unipolar | auf Bestellung 625 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT480L Produktcode: 189685 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| AOT480L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 80V 15A/180A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Power Dissipation (Max): 1.9W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT480L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 80V 180A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT480L; 180A; 80V; 333W; 0.0045R; N-канальний; Корпус: TO-220; ALPHA & OMEGA | auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| AOT482L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 80V 11A/105A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 105A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT482L | ALPHA & OMEGA SEMICONDUCTOR | AOT482L THT N channel transistors | auf Bestellung 465 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT482L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 80V 105A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT4N60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220 | auf Bestellung 652 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT4N60 | ALPHA&OMEGA | Transistor N-Channel MOSFET; 600V; 30V; 2,2Ohm; 4A; 104W; -55°C ~ 150°C; AOT4N60 TAOT4n60 Anzahl je Verpackung: 25 Stücke | auf Bestellung 35 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT4N60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 4A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 25 V | auf Bestellung 420 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT4N60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220 | auf Bestellung 652 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT4N60 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.7A; 104W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.7A Power dissipation: 104W Case: TO220 Gate-source voltage: ±30V On-state resistance: 2.2Ω Mounting: THT Gate charge: 15nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT4N60 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.7A; 104W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.7A Power dissipation: 104W Case: TO220 Gate-source voltage: ±30V On-state resistance: 2.2Ω Mounting: THT Gate charge: 15nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT4N60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT4S60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 4A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT4S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT500 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 33V 80A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT502 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 33V 9A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT5B60D | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 5A; 41.2W; TO220; Eoff: 0.04mJ; Eon: 0.14mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 5A Power dissipation: 41.2W Case: TO220 Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: THT Gate charge: 9.4nC Kind of package: tube Turn-on time: 27ns Turn-off time: 95ns Collector-emitter saturation voltage: 1.55V Turn-off switching energy: 0.04mJ Turn-on switching energy: 0.14mJ Anzahl je Verpackung: 1 Stücke | auf Bestellung 59 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT5B60D | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 10A 82400mW 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT5B60D | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 5A; 41.2W; TO220; Eoff: 0.04mJ; Eon: 0.14mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 5A Power dissipation: 41.2W Case: TO220 Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: THT Gate charge: 9.4nC Kind of package: tube Turn-on time: 27ns Turn-off time: 95ns Collector-emitter saturation voltage: 1.55V Turn-off switching energy: 0.04mJ Turn-on switching energy: 0.14mJ | auf Bestellung 59 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT5B60D | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 10A 82.4W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 98 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 12ns/83ns Switching Energy: 140µJ (on), 40µJ (off) Test Condition: 400V, 5A, 60Ohm, 15V Gate Charge: 9.4 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 20 A Power - Max: 82.4 W | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT5B65M1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 5A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 195 ns Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 8.5ns/106ns Switching Energy: 80µJ (on), 70µJ (off) Test Condition: 400V, 5A, 60Ohm, 15V Gate Charge: 14 nC Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 15 A Power - Max: 83 W | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT5B65M1 | ALPHA & OMEGA SEMICONDUCTOR | AOT5B65M1 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT5B65M1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 10A 83000mW 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT5N100 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 1000V 4A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 2.5A, 10V Power Dissipation (Max): 195W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT5N100 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 2.5A; 195W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2.5A Power dissipation: 195W Case: TO220 Gate-source voltage: ±30V On-state resistance: 4.2Ω Mounting: THT Gate charge: 19nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT5N100 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 1KV 4A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT5N100 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 1KV 4A 3-Pin(3+Tab) TO-220 | auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT5N100 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 1KV 4A 3-Pin(3+Tab) TO-220 | auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOT5N100 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 1KV 4A 3-Pin(3+Tab) TO-220 | auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT5N100 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 2.5A; 195W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2.5A Power dissipation: 195W Case: TO220 Gate-source voltage: ±30V On-state resistance: 4.2Ω Mounting: THT Gate charge: 19nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT5N50 | ALPHA&OMEGA | Transistor N-Channel MOSFET; 500V; 30V; 1,5Ohm; 5A; 104W; -55°C ~ 150°C; AOT5N50 TAOT5n50 Anzahl je Verpackung: 25 Stücke | auf Bestellung 45 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT5N50 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT5N50 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; 104W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3.3A Power dissipation: 104W Case: TO220 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 15.5nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT5N50 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 5A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V | auf Bestellung 588 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT5N50 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; 104W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3.3A Power dissipation: 104W Case: TO220 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 15.5nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT5N50_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 5A TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT5N60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 5A TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT600A60L | Alpha & Omega Semiconductor | N Channel Power Transistor | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT600A60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 8A TO220 | auf Bestellung 991 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT600A70FL | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 700V 8.5A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT600A70L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 700V 8.5A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT66518L | Alpha & Omega Semiconductor | 150V N-Channel AlphaSGT | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT66518L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 150V 30A/120A TO220 Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 10W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT66518L | Alpha & Omega Semiconductor | 150V N-Channel AlphaSGT | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT66518L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 150V 30A/120A TO220 Packaging: Cut Tape (CT) Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 10W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 75 V | auf Bestellung 837 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT66613L | Alpha & Omega Semiconductor | 60V N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT66613L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 44.5A/120A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44.5A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 8.3W (Ta), 260W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT66613L | ALPHA & OMEGA SEMICONDUCTOR | AOT66613L THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT66616L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 38.5A/140A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38.5A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Power Dissipation (Max): 8.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT66616L | ALPHA & OMEGA SEMICONDUCTOR | AOT66616L THT N channel transistors | auf Bestellung 473 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT66616L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 140A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT66616L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 140A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT66811L | Alpha & Omega Semiconductor | Medium Voltage MOSFETs (40V - 400V) | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT66914L | Alpha & Omega Semiconductor | N Channel Trench Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT66916L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 35.5A; 8.3W Mounting: THT Case: TO220-3 Drain-source voltage: 100V Drain current: 35.5A On-state resistance: 3.6mΩ Type of transistor: N-MOSFET Power dissipation: 8.3W Polarisation: unipolar Gate charge: 78nC Technology: AlphaSGT™ Kind of channel: enhanced Gate-source voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT66916L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 35.5A; 8.3W Mounting: THT Case: TO220-3 Drain-source voltage: 100V Drain current: 35.5A On-state resistance: 3.6mΩ Type of transistor: N-MOSFET Power dissipation: 8.3W Polarisation: unipolar Gate charge: 78nC Technology: AlphaSGT™ Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT66916L | Alpha & Omega Semiconductor | N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT66916L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 35.5/120A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.5A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 8.3W (Ta), 277W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 50 V | auf Bestellung 1714 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT66920L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT66920L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 22.5A/80A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22.5A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 8.3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V | auf Bestellung 1705 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT66920L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT66920L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 22.5A; 8.3W Drain-source voltage: 100V Drain current: 22.5A On-state resistance: 8mΩ Type of transistor: N-MOSFET Power dissipation: 8.3W Polarisation: unipolar Gate charge: 50nC Technology: AlphaSGT™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO220-3 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT66920L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 22.5A; 8.3W Drain-source voltage: 100V Drain current: 22.5A On-state resistance: 8mΩ Type of transistor: N-MOSFET Power dissipation: 8.3W Polarisation: unipolar Gate charge: 50nC Technology: AlphaSGT™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO220-3 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT780A70L | Alpha & Omega Semiconductor Inc. | Description: N Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 780mOhm @ 1.4A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT7N60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 7A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.5A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT7N60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT7N60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT7N65 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 7A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT7N65 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220 | auf Bestellung 569 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT7N65 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.5A; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.5A Case: TO220 Gate-source voltage: ±30V On-state resistance: 1.56Ω Mounting: THT Gate charge: 19nC Kind of channel: enhanced | auf Bestellung 419 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT7N65 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.5A; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.5A Case: TO220 Gate-source voltage: ±30V On-state resistance: 1.56Ω Mounting: THT Gate charge: 19nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 419 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT7N65 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT7N65 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220 | auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT7N65 | ALPHA&OMEGA | Transistor N-Channel MOSFET; 650V; 30V; 1,56Ohm; 7A; 192W; -55°C ~ 150°C; AOT7N65 TAOT7n65 Anzahl je Verpackung: 10 Stücke | auf Bestellung 12 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT7N70 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4.2A; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4.2A Case: TO220 Gate-source voltage: ±30V On-state resistance: 1.8Ω Mounting: THT Gate charge: 20.5nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT7N70 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 700V 7A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 3.5A, 10V Power Dissipation (Max): 198W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT7N70 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4.2A; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4.2A Case: TO220 Gate-source voltage: ±30V On-state resistance: 1.8Ω Mounting: THT Gate charge: 20.5nC Kind of channel: enhanced | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT7N70 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 700V 7A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT7S60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 7A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT7S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT7S65L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT7S65L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 7A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V | auf Bestellung 373 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT7S65L Produktcode: 109358 | Verschiedene Bauteile > Other components 3 | Produkt ist nicht verfügbar | ||||||||||||||||||
| AOT8B65M3 | Alpha & Omega Semiconductor | Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT8N50 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.6A; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.6A Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 23.6nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 781 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT8N50 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 8A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V | auf Bestellung 3780 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT8N50 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.6A; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.6A Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 23.6nC Kind of channel: enhanced | auf Bestellung 781 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOT8N50 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220 | auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOT8N50L | Alpha & Omega Semiconductor Inc. | Description: MOSFET Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT8N60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 8A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT8N60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 8A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT8N65 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 8A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1.15Ohm @ 4A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT8N65_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 8A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1.15Ohm @ 4A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT8N80 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.6A Case: TO220 Gate-source voltage: ±30V On-state resistance: 1.63Ω Mounting: THT Gate charge: 26nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT8N80 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 800V 7.4A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT8N80 | Alpha & Omega Semiconductor Inc | Description: MOSFET N-CH 800V 7.4A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT8N80 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.6A Case: TO220 Gate-source voltage: ±30V On-state resistance: 1.63Ω Mounting: THT Gate charge: 26nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT8N80 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 800V 7.4A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT8N80L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 800V 7.4A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Rds On (Max) @ Id, Vgs: 1.63Ohm @ 4A, 10V Power Dissipation (Max): 245W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V | auf Bestellung 988 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT8N80L_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 800V 7.4A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Rds On (Max) @ Id, Vgs: 1.63Ohm @ 4A, 10V Power Dissipation (Max): 245W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT9N40 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 400V 8A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V Power Dissipation (Max): 132W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT9N40 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 400V 8A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT9N50 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT9N50 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 9A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V | auf Bestellung 5947 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOT9N70 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 700V 9A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V Power Dissipation (Max): 236W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOT9N70 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 700V 9A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B141206SR33MT | Abracon LLC | Description: IND 0.33UH 3.5A 32MOHM Tolerance: ±20% Packaging: Cut Tape (CT) Package / Case: 0505 (1412 Metric) Size / Dimension: 0.055" L x 0.047" W (1.40mm x 1.20mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 32mOhm Max Frequency - Self Resonant: 120MHz Current - Saturation (Isat): 5.4A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0505 Height - Seated (Max): 0.026" (0.65mm) Inductance: 330 nH Current Rating (Amps): 3.5 A | auf Bestellung 2905 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTA-B141206SR33MT | ABRACON | Power Inductors - SMD IND 0.33uH 3.5A 32mOhm | auf Bestellung 3000 Stücke: Lieferzeit 84-98 Tag (e) |
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| AOTA-B141206SR33MT | Abracon LLC | Description: IND 0.33UH 3.5A 32MOHM Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 0505 (1412 Metric) Size / Dimension: 0.055" L x 0.047" W (1.40mm x 1.20mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 32mOhm Max Frequency - Self Resonant: 120MHz Current - Saturation (Isat): 5.4A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0505 Height - Seated (Max): 0.026" (0.65mm) Inductance: 330 nH Current Rating (Amps): 3.5 A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B141206SR47MT | Abracon LLC | Description: IND 0.47UH 2.9A 41MOHM Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 0505 (1412 Metric) Size / Dimension: 0.055" L x 0.047" W (1.40mm x 1.20mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 41mOhm Max Frequency - Self Resonant: 115MHz Current - Saturation (Isat): 3A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0505 Height - Seated (Max): 0.026" (0.65mm) Inductance: 470 nH Current Rating (Amps): 2.9 A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B141206SR47MT | ABRACON | Power Inductors - SMD IND 0.47uH 2.9A 41mOhm | auf Bestellung 3000 Stücke: Lieferzeit 84-98 Tag (e) |
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| AOTA-B141206SR47MT | Abracon LLC | Description: IND 0.47UH 2.9A 41MOHM Tolerance: ±20% Packaging: Cut Tape (CT) Package / Case: 0505 (1412 Metric) Size / Dimension: 0.055" L x 0.047" W (1.40mm x 1.20mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 41mOhm Max Frequency - Self Resonant: 115MHz Current - Saturation (Isat): 3A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0505 Height - Seated (Max): 0.026" (0.65mm) Inductance: 470 nH Current Rating (Amps): 2.9 A | auf Bestellung 2890 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTA-B141208SR24MT | ABRACON | Power Inductors - SMD IND 0.24uH 4.9A 24mOhm | auf Bestellung 3000 Stücke: Lieferzeit 84-98 Tag (e) |
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| AOTA-B141208SR24MT | Abracon LLC | Description: IND 0.24UH 4.9A 24MOHM Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 0505 (1412 Metric) Size / Dimension: 0.055" L x 0.047" W (1.40mm x 1.20mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 24mOhm Max Frequency - Self Resonant: 135MHz Current - Saturation (Isat): 6.5A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0505 Height - Seated (Max): 0.031" (0.80mm) Inductance: 240 nH Current Rating (Amps): 4.9 A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B141208SR24MT | Abracon Corporation | AOTA-B141208SR24MT | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOTA-B141208SR24MT | Abracon LLC | Description: IND 0.24UH 4.9A 24MOHM Tolerance: ±20% Packaging: Cut Tape (CT) Package / Case: 0505 (1412 Metric) Size / Dimension: 0.055" L x 0.047" W (1.40mm x 1.20mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 24mOhm Max Frequency - Self Resonant: 135MHz Current - Saturation (Isat): 6.5A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0505 Height - Seated (Max): 0.031" (0.80mm) Inductance: 240 nH Current Rating (Amps): 4.9 A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B141208SR33MT | Abracon Corporation | AOTA-B141208SR33MT | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOTA-B141208SR33MT | Abracon LLC | Description: IND 0.33UH 4A 27MOHM Tolerance: ±20% Packaging: Cut Tape (CT) Package / Case: 0505 (1412 Metric) Size / Dimension: 0.055" L x 0.047" W (1.40mm x 1.20mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 27mOhm Max Frequency - Self Resonant: 130MHz Current - Saturation (Isat): 5.2A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0505 Height - Seated (Max): 0.031" (0.80mm) Inductance: 330 nH Current Rating (Amps): 4 A | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTA-B141208SR33MT | Abracon LLC | Description: IND 0.33UH 4A 27MOHM Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 0505 (1412 Metric) Size / Dimension: 0.055" L x 0.047" W (1.40mm x 1.20mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 27mOhm Max Frequency - Self Resonant: 130MHz Current - Saturation (Isat): 5.2A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0505 Height - Seated (Max): 0.031" (0.80mm) Inductance: 330 nH Current Rating (Amps): 4 A | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTA-B141208SR33MT | ABRACON | Power Inductors - SMD IND 0.33uH 4A 27mOhm | auf Bestellung 3000 Stücke: Lieferzeit 14-28 Tag (e) |
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| AOTA-B141208SR47MT | ABRACON | Power Inductors - SMD IND 0.47uH 3.2A 32mOhm | auf Bestellung 3000 Stücke: Lieferzeit 84-98 Tag (e) |
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| AOTA-B141208SR47MT | Abracon LLC | Description: IND 0.47UH 3.2A 32MOHM Tolerance: ±20% Packaging: Cut Tape (CT) Package / Case: 0505 (1412 Metric) Size / Dimension: 0.055" L x 0.047" W (1.40mm x 1.20mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 32mOhm Max Frequency - Self Resonant: 110MHz Current - Saturation (Isat): 4A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0505 Height - Seated (Max): 0.031" (0.80mm) Inductance: 470 nH Current Rating (Amps): 3.2 A | auf Bestellung 2825 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTA-B141208SR47MT | Abracon Corporation | AOTA-B141208SR47MT | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOTA-B141208SR47MT | Abracon LLC | Description: IND 0.47UH 3.2A 32MOHM Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 0505 (1412 Metric) Size / Dimension: 0.055" L x 0.047" W (1.40mm x 1.20mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 32mOhm Max Frequency - Self Resonant: 110MHz Current - Saturation (Isat): 4A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0505 Height - Seated (Max): 0.031" (0.80mm) Inductance: 470 nH Current Rating (Amps): 3.2 A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B160808S1R0MT | ABRACON | Description: ABRACON - AOTA-B160808S1R0MT - Leistungsinduktivität (SMD), 1 µH, 2 A, Geschirmt, 2.3 A, AOTA-B160808S Series tariffCode: 85045000 Produkthöhe: 0.8mm rohsCompliant: YES Induktivität: 1µH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: 0603 [Metrisch 1608] DC-Widerstand, max.: 0.11ohm usEccn: EAR99 RMS-Strom Irms: 2A Sättigungsstrom (Isat): 2.3A Produktlänge: 1.6mm euEccn: NLR Produktpalette: AOTA-B160808S Series productTraceability: Yes-Date/Lot Code Produktbreite: 0.8mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2885 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B160808S1R0MT | ABRACON | Description: ABRACON - AOTA-B160808S1R0MT - Leistungsinduktivität (SMD), 1 µH, 2 A, Geschirmt, 2.3 A, AOTA-B160808S Series tariffCode: 85045000 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: AOTA-B160808S Series | auf Bestellung 2885 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B160808S2R2MT | ABRACON | Description: ABRACON - AOTA-B160808S2R2MT - Leistungsinduktivität (SMD), 2.2 µH, 1.1 A, Geschirmt, 1.3 A, AOTA-B160808S Series tariffCode: 85045000 Produkthöhe: 0.8mm rohsCompliant: YES Induktivität: 2.2µH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: 0603 [Metrisch 1608] DC-Widerstand, max.: 0.29ohm usEccn: EAR99 RMS-Strom Irms: 1.1A Sättigungsstrom (Isat): 1.3A Produktlänge: 1.6mm euEccn: NLR Produktpalette: AOTA-B160808S Series productTraceability: Yes-Date/Lot Code Produktbreite: 0.8mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 1750 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B160808S2R2MT | Abracon LLC | Description: FIXED IND 2.2UH 1.0A 290MOHM SMD Tolerance: ±20% Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Size / Dimension: 0.063" L x 0.032" W (1.60mm x 0.80mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 290mOhm Max Frequency - Self Resonant: 40MHz Current - Saturation (Isat): 1.2A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0603 Height - Seated (Max): 0.031" (0.80mm) Inductance: 2.2 µH Current Rating (Amps): 1 A | auf Bestellung 2065 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTA-B160808S2R2MT | Abracon Corporation | Inductor Power Shielded/Mini Molded Wirewound 2.2uH 20% 1MHz Metal Alloy Powder 1A 0.29Ohm DCR 0603 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B160808S2R2MT | ABRACON | Description: ABRACON - AOTA-B160808S2R2MT - Leistungsinduktivität (SMD), 2.2 µH, 1.1 A, Geschirmt, 1.3 A, AOTA-B160808S Series tariffCode: 85045000 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: AOTA-B160808S Series | auf Bestellung 1750 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B160808S2R2MT | ABRACON | Power Inductors - SMD IND 2.2uH 1A 290mOhms | auf Bestellung 2735 Stücke: Lieferzeit 14-28 Tag (e) |
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| AOTA-B160808S2R2MT | Abracon LLC | Description: FIXED IND 2.2UH 1.0A 290MOHM SMD Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Size / Dimension: 0.063" L x 0.032" W (1.60mm x 0.80mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 290mOhm Max Frequency - Self Resonant: 40MHz Current - Saturation (Isat): 1.2A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0603 Height - Seated (Max): 0.031" (0.80mm) Inductance: 2.2 µH Current Rating (Amps): 1 A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B160808SR47MT | ABRACON | Description: ABRACON - AOTA-B160808SR47MT - Leistungsinduktivität (SMD), 0.47 µH, 3.3 A, Geschirmt, 3.6 A, AOTA-B160808S Series tariffCode: 85045000 Produkthöhe: 0.8mm rohsCompliant: YES Induktivität: 0.47µH hazardous: false rohsPhthalatesCompliant: YES DC-Widerstand, max.: 0.043ohm usEccn: EAR99 Sättigungsstrom (Isat): 3.6A RMS-Strom Irms: 3.3A Produktlänge: 1.6mm euEccn: NLR Produktpalette: AOTA-B160808S Series productTraceability: Yes-Date/Lot Code Produktbreite: 0.8mm | auf Bestellung 2975 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B160808SR47MT | Abracon LLC | Description: FIXED IND 0.47UH 3A 43MOHM SMD Packaging: Tape & Reel (TR) Tolerance: ±20% Package / Case: 0603 (1608 Metric) Size / Dimension: 0.063" L x 0.032" W (1.60mm x 0.80mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 43mOhm Max Frequency - Self Resonant: 100MHz Current - Saturation (Isat): 3.3A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0603 Height - Seated (Max): 0.031" (0.80mm) Inductance: 470 nH Current Rating (Amps): 3 A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B160808SR47MT | ABRACON | Description: ABRACON - AOTA-B160808SR47MT - Leistungsinduktivität (SMD), 0.47 µH, 3.3 A, Geschirmt, 3.6 A, AOTA-B160808S Series tariffCode: 85045000 Produkthöhe: 0.8mm rohsCompliant: YES Induktivität: 0.47µH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: 0603 [Metrisch 1608] DC-Widerstand, max.: 0.043ohm usEccn: EAR99 RMS-Strom Irms: 3.3A Sättigungsstrom (Isat): 3.6A Produktlänge: 1.6mm euEccn: NLR Produktpalette: AOTA-B160808S Series productTraceability: Yes-Date/Lot Code Produktbreite: 0.8mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2975 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B160808SR47MT | Abracon LLC | Description: FIXED IND 0.47UH 3A 43MOHM SMD Packaging: Cut Tape (CT) Tolerance: ±20% Package / Case: 0603 (1608 Metric) Size / Dimension: 0.063" L x 0.032" W (1.60mm x 0.80mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 43mOhm Max Frequency - Self Resonant: 100MHz Current - Saturation (Isat): 3.3A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0603 Height - Seated (Max): 0.031" (0.80mm) Inductance: 470 nH Current Rating (Amps): 3 A | auf Bestellung 2360 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTA-B201206S1R0MT | Abracon LLC | Description: IND 1UH 2.4A 86MOHM Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 0805 (2012 Metric) Size / Dimension: 0.079" L x 0.047" W (2.00mm x 1.20mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 86mOhm Max Frequency - Self Resonant: 53MHz Current - Saturation (Isat): 2.5A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Inductance: 1 µH Current Rating (Amps): 2.4 A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B201206S1R0MT | ABRACON | Power Inductors - SMD IND 1uH 2.4A 86mOhm | auf Bestellung 3000 Stücke: Lieferzeit 14-28 Tag (e) |
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| AOTA-B201206S1R0MT | Abracon LLC | Description: IND 1UH 2.4A 86MOHM Tolerance: ±20% Packaging: Cut Tape (CT) Package / Case: 0805 (2012 Metric) Size / Dimension: 0.079" L x 0.047" W (2.00mm x 1.20mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 86mOhm Max Frequency - Self Resonant: 53MHz Current - Saturation (Isat): 2.5A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Inductance: 1 µH Current Rating (Amps): 2.4 A | auf Bestellung 2925 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTA-B201206SR47MT | Abracon LLC | Description: IND 0.47UH 4A 34MOHM Tolerance: ±20% Packaging: Cut Tape (CT) Package / Case: 0805 (2012 Metric) Size / Dimension: 0.079" L x 0.047" W (2.00mm x 1.20mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 34mOhm Max Frequency - Self Resonant: 96MHz Current - Saturation (Isat): 4.5A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Inductance: 470 nH Current Rating (Amps): 4 A | auf Bestellung 2925 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTA-B201206SR47MT | Abracon LLC | Description: IND 0.47UH 4A 34MOHM Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 0805 (2012 Metric) Size / Dimension: 0.079" L x 0.047" W (2.00mm x 1.20mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 34mOhm Max Frequency - Self Resonant: 96MHz Current - Saturation (Isat): 4.5A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Inductance: 470 nH Current Rating (Amps): 4 A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B201208SR11MT | Abracon LLC | Description: IND 0.11UH 5.6A 13MOHM Tolerance: ±20% Packaging: Cut Tape (CT) Package / Case: 0805 (2012 Metric) Size / Dimension: 0.079" L x 0.047" W (2.00mm x 1.20mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 13mOhm Max Frequency - Self Resonant: 185MHz Current - Saturation (Isat): 10A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0805 Height - Seated (Max): 0.031" (0.80mm) Inductance: 110 nH Current Rating (Amps): 5.6 A | auf Bestellung 2560 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTA-B201208SR11MT | Abracon LLC | Description: IND 0.11UH 5.6A 13MOHM Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 0805 (2012 Metric) Size / Dimension: 0.079" L x 0.047" W (2.00mm x 1.20mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 13mOhm Max Frequency - Self Resonant: 185MHz Current - Saturation (Isat): 10A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0805 Height - Seated (Max): 0.031" (0.80mm) Inductance: 110 nH Current Rating (Amps): 5.6 A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B201208SR33MT | Abracon LLC | Description: IND 0.33UH 4A 28MOHM Tolerance: ±20% Packaging: Cut Tape (CT) Package / Case: 0805 (2012 Metric) Size / Dimension: 0.079" L x 0.047" W (2.00mm x 1.20mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 28mOhm Max Frequency - Self Resonant: 125MHz Current - Saturation (Isat): 5.6A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0805 Height - Seated (Max): 0.031" (0.80mm) Inductance: 330 nH Current Rating (Amps): 4 A | auf Bestellung 2925 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTA-B201208SR33MT | Abracon LLC | Description: IND 0.33UH 4A 28MOHM Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 0805 (2012 Metric) Size / Dimension: 0.079" L x 0.047" W (2.00mm x 1.20mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 28mOhm Max Frequency - Self Resonant: 125MHz Current - Saturation (Isat): 5.6A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0805 Height - Seated (Max): 0.031" (0.80mm) Inductance: 330 nH Current Rating (Amps): 4 A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B201208SR47MT | Abracon LLC | Description: IND 0.47UH 4A 25MOHM Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 0805 (2012 Metric) Size / Dimension: 0.079" L x 0.047" W (2.00mm x 1.20mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 25mOhm Max Frequency - Self Resonant: 96MHz Current - Saturation (Isat): 45A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0805 Height - Seated (Max): 0.031" (0.80mm) Inductance: 470 nH Current Rating (Amps): 4 A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B201208SR47MT | Abracon LLC | Description: IND 0.47UH 4A 25MOHM Tolerance: ±20% Packaging: Cut Tape (CT) Package / Case: 0805 (2012 Metric) Size / Dimension: 0.079" L x 0.047" W (2.00mm x 1.20mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 25mOhm Max Frequency - Self Resonant: 96MHz Current - Saturation (Isat): 45A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0805 Height - Seated (Max): 0.031" (0.80mm) Inductance: 470 nH Current Rating (Amps): 4 A | auf Bestellung 2840 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTA-B201210S1R0MT | ABRACON | Power Inductors - SMD IND 1uH 3.1A 51mOhm | auf Bestellung 3000 Stücke: Lieferzeit 14-28 Tag (e) |
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| AOTA-B201210S1R0MT | Abracon LLC | Description: IND 1UH 3.1A 51MOHM Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 0805 (2012 Metric) Size / Dimension: 0.079" L x 0.047" W (2.00mm x 1.20mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 51mOhm Max Frequency - Self Resonant: 56MHz Current - Saturation (Isat): 3.6A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0805 Height - Seated (Max): 0.039" (1.00mm) Inductance: 1 µH Current Rating (Amps): 3.1 A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B201210S1R0MT | Abracon LLC | Description: IND 1UH 3.1A 51MOHM Tolerance: ±20% Packaging: Cut Tape (CT) Package / Case: 0805 (2012 Metric) Size / Dimension: 0.079" L x 0.047" W (2.00mm x 1.20mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 51mOhm Max Frequency - Self Resonant: 56MHz Current - Saturation (Isat): 3.6A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0805 Height - Seated (Max): 0.039" (1.00mm) Inductance: 1 µH Current Rating (Amps): 3.1 A | auf Bestellung 2925 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTA-B201210S2R2MT | Abracon LLC | Description: IND 2.2UH 1.9A 112MOHM Tolerance: ±20% Packaging: Cut Tape (CT) Package / Case: 0805 (2012 Metric) Size / Dimension: 0.079" L x 0.047" W (2.00mm x 1.20mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 112mOhm Max Frequency - Self Resonant: 36MHz Current - Saturation (Isat): 2.1A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0805 Height - Seated (Max): 0.039" (1.00mm) Inductance: 2.2 µH Current Rating (Amps): 1.9 A | auf Bestellung 2755 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTA-B201210S2R2MT | Abracon LLC | Description: IND 2.2UH 1.9A 112MOHM Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 0805 (2012 Metric) Size / Dimension: 0.079" L x 0.047" W (2.00mm x 1.20mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 112mOhm Max Frequency - Self Resonant: 36MHz Current - Saturation (Isat): 2.1A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0805 Height - Seated (Max): 0.039" (1.00mm) Inductance: 2.2 µH Current Rating (Amps): 1.9 A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B201210S2R2MT | ABRACON | Power Inductors - SMD IND 2.2uH 1.9A 112mOhm | auf Bestellung 3000 Stücke: Lieferzeit 14-28 Tag (e) |
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| AOTA-B201210SR11MT | ABRACON | Power Inductors - SMD IND 0.11uH 6.4A 10mOhm | auf Bestellung 3000 Stücke: Lieferzeit 14-28 Tag (e) |
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| AOTA-B201210SR11MT | Abracon LLC | Description: IND 0.11UH 6.4A 10MOHM Tolerance: ±20% Packaging: Cut Tape (CT) Package / Case: 0805 (2012 Metric) Size / Dimension: 0.079" L x 0.047" W (2.00mm x 1.20mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 10mOhm Max Frequency - Self Resonant: 264MHz Current - Saturation (Isat): 13A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0805 Height - Seated (Max): 0.039" (1.00mm) Inductance: 110 nH Current Rating (Amps): 6.4 A | auf Bestellung 2925 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTA-B201210SR11MT | Abracon LLC | Description: IND 0.11UH 6.4A 10MOHM Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 0805 (2012 Metric) Size / Dimension: 0.079" L x 0.047" W (2.00mm x 1.20mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 10mOhm Max Frequency - Self Resonant: 264MHz Current - Saturation (Isat): 13A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0805 Height - Seated (Max): 0.039" (1.00mm) Inductance: 110 nH Current Rating (Amps): 6.4 A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B201210SR24MT | ABRACON | Power Inductors - SMD IND 0.24uH 5A 15mOhm | auf Bestellung 3000 Stücke: Lieferzeit 14-28 Tag (e) |
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| AOTA-B201210SR47MT | ABRACON | Power Inductors - SMD IND 0.47uH 4.8A 24mOhm | auf Bestellung 3000 Stücke: Lieferzeit 14-28 Tag (e) |
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| AOTA-B201210SR47MT | Abracon LLC | Description: IND 0.47UH 4.8A 24MOHM Packaging: Cut Tape (CT) Tolerance: ±20% Package / Case: 0805 (2012 Metric) Size / Dimension: 0.079" L x 0.047" W (2.00mm x 1.20mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 24mOhm Max Frequency - Self Resonant: 96MHz Current - Saturation (Isat): 5.1A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0805 Height - Seated (Max): 0.039" (1.00mm) Inductance: 470 nH Current Rating (Amps): 4.8 A | auf Bestellung 2980 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTA-B201210SR47MT | Abracon LLC | Description: IND 0.47UH 4.8A 24MOHM Packaging: Tape & Reel (TR) Tolerance: ±20% Package / Case: 0805 (2012 Metric) Size / Dimension: 0.079" L x 0.047" W (2.00mm x 1.20mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 24mOhm Max Frequency - Self Resonant: 96MHz Current - Saturation (Isat): 5.1A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0805 Height - Seated (Max): 0.039" (1.00mm) Inductance: 470 nH Current Rating (Amps): 4.8 A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B201608S1R0MT | ABRACON | Description: ABRACON - AOTA-B201608S1R0MT - Leistungsinduktivität (SMD), 1 µH, 4.2 A, Geschirmt, 4.5 A, AOTA-B201608S Series tariffCode: 85045000 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: AOTA-B201608S Series | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B201608S1R0MT | ABRACON | Description: ABRACON - AOTA-B201608S1R0MT - Leistungsinduktivität (SMD), 1 µH, 4.2 A, Geschirmt, 4.5 A, AOTA-B201608S Series tariffCode: 85045000 Produkthöhe: 0.8mm rohsCompliant: YES Induktivität: 1µH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: 0806 [Metrisch 2016] DC-Widerstand, max.: 0.052ohm usEccn: EAR99 RMS-Strom Irms: 4.2A Sättigungsstrom (Isat): 4.5A Produktlänge: 2mm euEccn: NLR Produktpalette: AOTA-B201608S Series productTraceability: Yes-Date/Lot Code Produktbreite: 1.6mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B201608S2R2MT | ABRACON | Description: ABRACON - AOTA-B201608S2R2MT - Leistungsinduktivität (SMD), 2.2 µH, 2 A, Geschirmt, 2.6 A, AOTA-B201608S Series tariffCode: 85045000 Produkthöhe: 0.8mm rohsCompliant: YES Induktivität: 2.2µH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: 0806 [Metrisch 2016] DC-Widerstand, max.: 0.148ohm usEccn: EAR99 RMS-Strom Irms: 2A Sättigungsstrom (Isat): 2.6A Produktlänge: 2mm euEccn: NLR Produktpalette: AOTA-B201608S Series productTraceability: Yes-Date/Lot Code Produktbreite: 1.6mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B201608S2R2MT | ABRACON | Description: ABRACON - AOTA-B201608S2R2MT - Leistungsinduktivität (SMD), 2.2 µH, 2 A, Geschirmt, 2.6 A, AOTA-B201608S Series tariffCode: 85045000 Produkthöhe: 0.8mm rohsCompliant: YES Induktivität: 2.2µH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: 0806 [Metrisch 2016] DC-Widerstand, max.: 0.148ohm usEccn: EAR99 RMS-Strom Irms: 2A Sättigungsstrom (Isat): 2.6A Produktlänge: 2mm euEccn: NLR Produktpalette: AOTA-B201608S Series productTraceability: Yes-Date/Lot Code Produktbreite: 1.6mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B201608SR24MT | ABRACON | Description: ABRACON - AOTA-B201608SR24MT - Leistungsinduktivität (SMD), 0.24 µH, 6.2 A, Geschirmt, 8.2 A, AOTA-B201608S Series tariffCode: 85045000 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: AOTA-B201608S Series | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B201608SR24MT | ABRACON | Power Inductors - SMD IND 0.24uH 5.5A 22mOhms | auf Bestellung 3000 Stücke: Lieferzeit 14-28 Tag (e) |
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| AOTA-B201608SR24MT | ABRACON | Description: ABRACON - AOTA-B201608SR24MT - Leistungsinduktivität (SMD), 0.24 µH, 6.2 A, Geschirmt, 8.2 A, AOTA-B201608S Series tariffCode: 85045000 Produkthöhe: 0.8mm rohsCompliant: YES Induktivität: 240nH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: 0806 [Metrisch 2016] DC-Widerstand, max.: 0.022ohm usEccn: EAR99 RMS-Strom Irms: 6.2A Sättigungsstrom (Isat): 8.2A Produktlänge: 2mm euEccn: NLR Produktpalette: AOTA-B201608S Series productTraceability: Yes-Date/Lot Code Produktbreite: 1.6mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B201608SR47MT | ABRACON | Description: ABRACON - AOTA-B201608SR47MT - Leistungsinduktivität (SMD), 0.47 µH, 4.1 A, Geschirmt, 5.5 A, AOTA-B201608S Series tariffCode: 85045000 Produkthöhe: 0.8mm rohsCompliant: YES Induktivität: 0.47µH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: 0806 [Metrisch 2016] DC-Widerstand, max.: 0.024ohm usEccn: EAR99 RMS-Strom Irms: 4.1A Sättigungsstrom (Isat): 5.5A Produktlänge: 2mm euEccn: NLR Produktpalette: AOTA-B201608S Series productTraceability: Yes-Date/Lot Code Produktbreite: 1.6mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B201608SR47MT | Abracon LLC | Description: FIXED IND 0.47UH 3.6A 24MOHM SMD Tolerance: ±20% Packaging: Cut Tape (CT) Package / Case: 0806 (2016 Metric) Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 24mOhm Max Frequency - Self Resonant: 104MHz Current - Saturation (Isat): 5A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0806 Height - Seated (Max): 0.031" (0.80mm) Inductance: 470 nH Current Rating (Amps): 3.6 A | auf Bestellung 2675 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTA-B201608SR47MT | ABRACON | Description: ABRACON - AOTA-B201608SR47MT - Leistungsinduktivität (SMD), 0.47 µH, 4.1 A, Geschirmt, 5.5 A, AOTA-B201608S Series tariffCode: 85045000 Produkthöhe: 0.8mm rohsCompliant: YES Induktivität: 0.47µH hazardous: false rohsPhthalatesCompliant: YES DC-Widerstand, max.: 0.024ohm usEccn: EAR99 Sättigungsstrom (Isat): 5.5A RMS-Strom Irms: 4.1A Produktlänge: 2mm euEccn: NLR Produktpalette: AOTA-B201608S Series productTraceability: Yes-Date/Lot Code Produktbreite: 1.6mm | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B201608SR47MT | Abracon LLC | Description: FIXED IND 0.47UH 3.6A 24MOHM SMD Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 0806 (2016 Metric) Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 24mOhm Max Frequency - Self Resonant: 104MHz Current - Saturation (Isat): 5A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0806 Height - Seated (Max): 0.031" (0.80mm) Inductance: 470 nH Current Rating (Amps): 3.6 A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B201610S1R0MT | Abracon Corporation | Inductor Power Shielded/Mini Molded Wirewound 1uH 20% 1MHz Metal Alloy Powder 4.2A 0.037Ohm DCR 0806 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B201610S1R0MT | ABRACON | Description: ABRACON - AOTA-B201610S1R0MT - Leistungsinduktivität (SMD), 1 µH, 4.5 A, Geschirmt, 4.5 A, AOTA-B201610S Series tariffCode: 85045000 Produkthöhe: 1mm rohsCompliant: YES Induktivität: 1µH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: - DC-Widerstand, max.: 0.037ohm usEccn: EAR99 RMS-Strom Irms: 4.5A Sättigungsstrom (Isat): 4.5A Produktlänge: 2mm euEccn: NLR Produktpalette: AOTA-B201610S Series productTraceability: Yes-Date/Lot Code Produktbreite: 1.6mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B201610S1R0MT | ABRACON | Description: ABRACON - AOTA-B201610S1R0MT - Leistungsinduktivität (SMD), 1 µH, 4.5 A, Geschirmt, 4.5 A, AOTA-B201610S Series tariffCode: 85045000 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: AOTA-B201610S Series | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B201610S1R5MT | ABRACON | Description: ABRACON - AOTA-B201610S1R5MT - Leistungsinduktivität (SMD), 1.5 µH, 3.2 A, Geschirmt, 3.5 A, AOTA-B201610S Series tariffCode: 85045000 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: AOTA-B201610S Series | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B201610S1R5MT | ABRACON | Description: ABRACON - AOTA-B201610S1R5MT - Leistungsinduktivität (SMD), 1.5 µH, 3.2 A, Geschirmt, 3.5 A, AOTA-B201610S Series tariffCode: 85045000 Produkthöhe: 1mm rohsCompliant: YES Induktivität: 1.5µH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: - DC-Widerstand, max.: 0 usEccn: EAR99 RMS-Strom Irms: 3.2A Sättigungsstrom (Isat): 3.5A Produktlänge: 2mm euEccn: NLR Produktpalette: AOTA-B201610S Series productTraceability: Yes-Date/Lot Code Produktbreite: 1.6mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B201610S1R5MT | Abracon Corporation | AOTA-B201610S1R5MT | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B201610S2R2MT | Abracon LLC | Description: IND 2.2UH 2A 74M Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 0806 (2016 Metric) Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 74mOhm Max Frequency - Self Resonant: 30MHz Current - Saturation (Isat): 2.6A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0806 Height - Seated (Max): 0.039" (1.00mm) Inductance: 2.2 µH Current Rating (Amps): 2 A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B201610S2R2MT | ABRACON | Description: ABRACON - AOTA-B201610S2R2MT - Leistungsinduktivität (SMD), 2.2 µH, 2.3 A, Geschirmt, 2.9 A, AOTA-B201610S Series tariffCode: 85045000 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B201610S2R2MT | ABRACON | Power Inductors - SMD IND 2.2uH 2A 74m? | auf Bestellung 542 Stücke: Lieferzeit 14-28 Tag (e) |
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| AOTA-B201610S2R2MT | ABRACON | Description: ABRACON - AOTA-B201610S2R2MT - Leistungsinduktivität (SMD), 2.2 µH, 2.3 A, Geschirmt, 2.9 A, AOTA-B201610S Series tariffCode: 85045000 Produkthöhe: 1mm rohsCompliant: YES Induktivität: 2.2µH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: - DC-Widerstand, max.: 0.074ohm usEccn: EAR99 RMS-Strom Irms: 2.3A Sättigungsstrom (Isat): 2.9A Produktlänge: 2mm euEccn: NLR Produktpalette: AOTA-B201610S Series productTraceability: Yes-Date/Lot Code Produktbreite: 1.6mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B201610S2R2MT | Abracon LLC | Description: IND 2.2UH 2A 74M Tolerance: ±20% Packaging: Cut Tape (CT) Package / Case: 0806 (2016 Metric) Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 74mOhm Max Frequency - Self Resonant: 30MHz Current - Saturation (Isat): 2.6A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0806 Height - Seated (Max): 0.039" (1.00mm) Inductance: 2.2 µH Current Rating (Amps): 2 A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B201610S4R7MT | ABRACON | Description: ABRACON - AOTA-B201610S4R7MT - Leistungsinduktivität (SMD), 4.7 µH, 1.5 A, Geschirmt, 1.9 A, AOTA-B201610S Series tariffCode: 85045000 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: AOTA-B201610S Series | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B201610S4R7MT | ABRACON | Description: ABRACON - AOTA-B201610S4R7MT - Leistungsinduktivität (SMD), 4.7 µH, 1.5 A, Geschirmt, 1.9 A, AOTA-B201610S Series tariffCode: 85045000 Produkthöhe: 1mm rohsCompliant: YES Induktivität: 4.7µH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: - DC-Widerstand, max.: 0.235ohm usEccn: EAR99 RMS-Strom Irms: 1.5A Sättigungsstrom (Isat): 1.9A Produktlänge: 2mm euEccn: NLR Produktpalette: AOTA-B201610S Series productTraceability: Yes-Date/Lot Code Produktbreite: 1.6mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B201610SR24MT | ABRACON | Description: ABRACON - AOTA-B201610SR24MT - Leistungsinduktivität (SMD), 240 nH, 5.6 A, Geschirmt, 7.8 A, AOTA-B201610S Series tariffCode: 85045000 Produkthöhe: 1mm rohsCompliant: YES Induktivität: 240nH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: - DC-Widerstand, max.: 0.015ohm usEccn: EAR99 RMS-Strom Irms: 5.6A Sättigungsstrom (Isat): 7.8A Produktlänge: 2mm euEccn: NLR Produktpalette: AOTA-B201610S Series productTraceability: Yes-Date/Lot Code Produktbreite: 1.6mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B201610SR24MT | ABRACON | Power Inductors - SMD IND 0.24uH 5A 15m? | auf Bestellung 3000 Stücke: Lieferzeit 100-114 Tag (e) |
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| AOTA-B201610SR24MT | ABRACON | Description: ABRACON - AOTA-B201610SR24MT - Leistungsinduktivität (SMD), 240 nH, 5.6 A, Geschirmt, 7.8 A, AOTA-B201610S Series tariffCode: 85045000 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: AOTA-B201610S Series | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B201610SR33MT | ABRACON | Description: ABRACON - AOTA-B201610SR33MT - Leistungsinduktivität (SMD), 330 nH, 5.3 A, Geschirmt, 7.6 A, AOTA-B201610S Series tariffCode: 85045000 Produkthöhe: 1mm rohsCompliant: YES Induktivität: 330nH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: - DC-Widerstand, max.: 0.021ohm usEccn: EAR99 RMS-Strom Irms: 5.3A Sättigungsstrom (Isat): 7.6A Produktlänge: 2mm euEccn: NLR Produktpalette: AOTA-B201610S Series productTraceability: Yes-Date/Lot Code Produktbreite: 1.6mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2850 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B201610SR33MT | Abracon LLC | Description: IND 0.33UH 4.8A 21M Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 0806 (2016 Metric) Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 21mOhm Max Frequency - Self Resonant: 110MHz Current - Saturation (Isat): 6.8A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0806 Height - Seated (Max): 0.039" (1.00mm) Inductance: 330 nH Current Rating (Amps): 4.8 A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B201610SR33MT | ABRACON | Power Inductors - SMD IND 0.33uH 4.8A 21m? | auf Bestellung 3000 Stücke: Lieferzeit 14-28 Tag (e) |
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| AOTA-B201610SR33MT | ABRACON | Description: ABRACON - AOTA-B201610SR33MT - Leistungsinduktivität (SMD), 330 nH, 5.3 A, Geschirmt, 7.6 A, AOTA-B201610S Series tariffCode: 85045000 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: AOTA-B201610S Series | auf Bestellung 2850 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B201610SR33MT | Abracon LLC | Description: IND 0.33UH 4.8A 21M Tolerance: ±20% Packaging: Cut Tape (CT) Package / Case: 0806 (2016 Metric) Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 21mOhm Max Frequency - Self Resonant: 110MHz Current - Saturation (Isat): 6.8A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0806 Height - Seated (Max): 0.039" (1.00mm) Inductance: 330 nH Current Rating (Amps): 4.8 A | auf Bestellung 2690 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTA-B201610SR47MT | ABRACON | Description: ABRACON - AOTA-B201610SR47MT - Leistungsinduktivität (SMD), 470 nH, 5.5 A, Geschirmt, 6.2 A, AOTA-B201610S Series tariffCode: 85045000 Produkthöhe: 1mm rohsCompliant: YES Induktivität: 470nH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: - DC-Widerstand, max.: 0.021ohm usEccn: EAR99 RMS-Strom Irms: 5.5A Sättigungsstrom (Isat): 6.2A Produktlänge: 2mm euEccn: NLR Produktpalette: AOTA-B201610S Series productTraceability: Yes-Date/Lot Code Produktbreite: 1.6mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2945 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B201610SR47MT | Abracon LLC | Description: IND 0.47UH 4.8A 21M Tolerance: ±20% Packaging: Cut Tape (CT) Package / Case: 0806 (2016 Metric) Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 21mOhm Max Frequency - Self Resonant: 72MHz Current - Saturation (Isat): 5.6A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0806 Height - Seated (Max): 0.039" (1.00mm) Inductance: 470 nH Current Rating (Amps): 4.8 A | auf Bestellung 1830 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTA-B201610SR47MT | ABRACON | Description: ABRACON - AOTA-B201610SR47MT - Leistungsinduktivität (SMD), 470 nH, 5.5 A, Geschirmt, 6.2 A, AOTA-B201610S Series tariffCode: 85045000 Produkthöhe: 1mm rohsCompliant: YES Induktivität: 470nH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: - DC-Widerstand, max.: 0.021ohm usEccn: EAR99 RMS-Strom Irms: 5.5A Sättigungsstrom (Isat): 6.2A Produktlänge: 2mm euEccn: NLR Produktpalette: AOTA-B201610S Series productTraceability: Yes-Date/Lot Code Produktbreite: 1.6mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2945 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B201610SR47MT | Abracon LLC | Description: IND 0.47UH 4.8A 21M Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 0806 (2016 Metric) Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 21mOhm Max Frequency - Self Resonant: 72MHz Current - Saturation (Isat): 5.6A Inductance Frequency - Test: 1 MHz Supplier Device Package: 0806 Height - Seated (Max): 0.039" (1.00mm) Inductance: 470 nH Current Rating (Amps): 4.8 A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B201610SR68MT | ABRACON | Description: ABRACON - AOTA-B201610SR68MT - Leistungsinduktivität (SMD), 680 nH, 3.9 A, Geschirmt, 5.4 A, AOTA-B201610S Series tariffCode: 85045000 Produkthöhe: 1mm rohsCompliant: YES Induktivität: 680nH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: - DC-Widerstand, max.: 0.035ohm usEccn: EAR99 RMS-Strom Irms: 3.9A Sättigungsstrom (Isat): 5.4A Produktlänge: 2mm euEccn: NLR Produktpalette: AOTA-B201610S Series productTraceability: Yes-Date/Lot Code Produktbreite: 1.6mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2700 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B201610SR68MT | ABRACON | Description: ABRACON - AOTA-B201610SR68MT - Leistungsinduktivität (SMD), 680 nH, 3.9 A, Geschirmt, 5.4 A, AOTA-B201610S Series tariffCode: 85045000 Produkthöhe: 1mm rohsCompliant: YES Induktivität: 680nH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: - DC-Widerstand, max.: 0.035ohm usEccn: EAR99 RMS-Strom Irms: 3.9A Sättigungsstrom (Isat): 5.4A Produktlänge: 2mm euEccn: NLR Produktpalette: AOTA-B201610S Series productTraceability: Yes-Date/Lot Code Produktbreite: 1.6mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2700 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B252008S100MT | Abracon LLC | Description: FIXED IND 10UH 0.95A 570MOHM SMD Tolerance: ±20% Packaging: Cut Tape (CT) Package / Case: 1008 (2520 Metric) Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 570mOhm Max Frequency - Self Resonant: 14MHz Current - Saturation (Isat): 1.2A Inductance Frequency - Test: 1 MHz Supplier Device Package: 1008 Height - Seated (Max): 0.031" (0.80mm) Inductance: 10 µH Current Rating (Amps): 950 mA | auf Bestellung 2750 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTA-B252008S100MT | ABRACON | Power Inductors - SMD IND 10uH 0.95A 570mOhms | auf Bestellung 2948 Stücke: Lieferzeit 14-28 Tag (e) |
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| AOTA-B252008S100MT | ABRACON | Description: ABRACON - AOTA-B252008S100MT - Leistungsinduktivität (SMD), 10 µH, 1.05 A, Geschirmt, 1.4 A, AOTA-B252008S Series tariffCode: 85045000 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: AOTA-B252008S Series | auf Bestellung 2945 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B252008S100MT | Abracon LLC | Description: FIXED IND 10UH 0.95A 570MOHM SMD Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 1008 (2520 Metric) Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 570mOhm Max Frequency - Self Resonant: 14MHz Current - Saturation (Isat): 1.2A Inductance Frequency - Test: 1 MHz Supplier Device Package: 1008 Height - Seated (Max): 0.031" (0.80mm) Inductance: 10 µH Current Rating (Amps): 950 mA | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B252008S100MT | ABRACON | Description: ABRACON - AOTA-B252008S100MT - Leistungsinduktivität (SMD), 10 µH, 1.05 A, Geschirmt, 1.4 A, AOTA-B252008S Series tariffCode: 85045000 Produkthöhe: 0.8mm rohsCompliant: YES Induktivität: 10µH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: 1008 [Metrisch 2520] DC-Widerstand, max.: 0.57ohm usEccn: EAR99 RMS-Strom Irms: 1.05A Sättigungsstrom (Isat): 1.4A Produktlänge: 2.5mm euEccn: NLR Produktpalette: AOTA-B252008S Series productTraceability: Yes-Date/Lot Code Produktbreite: 2mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2945 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B252008S1R0MT | ABRACON | Description: ABRACON - AOTA-B252008S1R0MT - Leistungsinduktivität (SMD), 1 µH, 3.8 A, Geschirmt, 4.8 A, AOTA-B252008S Series tariffCode: 85045000 Produkthöhe: 0.8mm rohsCompliant: YES Induktivität: 1µH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: 1008 [Metrisch 2520] DC-Widerstand, max.: 0.046ohm usEccn: EAR99 RMS-Strom Irms: 3.8A Sättigungsstrom (Isat): 4.8A Produktlänge: 2.5mm euEccn: NLR Produktpalette: AOTA-B252008S Series productTraceability: Yes-Date/Lot Code Produktbreite: 2mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B252008S1R0MT | Abracon LLC | Description: FIXED IND 1.0UH 3.5A 46MOHM SMD Tolerance: ±20% Packaging: Cut Tape (CT) Package / Case: 1008 (2520 Metric) Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 46mOhm Max Frequency - Self Resonant: 56MHz Current - Saturation (Isat): 4.3A Inductance Frequency - Test: 1 MHz Supplier Device Package: 1008 Height - Seated (Max): 0.031" (0.80mm) Inductance: 1 µH Current Rating (Amps): 3.5 A | auf Bestellung 2750 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTA-B252008S1R0MT | ABRACON | Description: ABRACON - AOTA-B252008S1R0MT - Leistungsinduktivität (SMD), 1 µH, 3.8 A, Geschirmt, 4.8 A, AOTA-B252008S Series tariffCode: 85045000 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: AOTA-B252008S Series | auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B252008S1R0MT | Abracon LLC | Description: FIXED IND 1.0UH 3.5A 46MOHM SMD Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 1008 (2520 Metric) Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 46mOhm Max Frequency - Self Resonant: 56MHz Current - Saturation (Isat): 4.3A Inductance Frequency - Test: 1 MHz Supplier Device Package: 1008 Height - Seated (Max): 0.031" (0.80mm) Inductance: 1 µH Current Rating (Amps): 3.5 A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B252008S1R0MT | ABRACON | Power Inductors - SMD IND 1uH 3.5A 46mOhms | auf Bestellung 2937 Stücke: Lieferzeit 14-28 Tag (e) |
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| AOTA-B252008S4R7MT | Abracon LLC | Description: FIXED IND 4.7UH 1.75A 180MOHM SM Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 1008 (2520 Metric) Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 180mOhm Max Frequency - Self Resonant: 20MHz Current - Saturation (Isat): 1.75A Inductance Frequency - Test: 1 MHz Supplier Device Package: 1008 Height - Seated (Max): 0.031" (0.80mm) Inductance: 4.7 µH Current Rating (Amps): 1.8 A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B252008S4R7MT | ABRACON | Description: ABRACON - AOTA-B252008S4R7MT - Leistungsinduktivität (SMD), 4.7 µH, 2 A, Geschirmt, 1.95 A, AOTA-B252008S Series tariffCode: 85045000 Produkthöhe: 0.8mm rohsCompliant: YES Induktivität: 4.7µH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: 1008 [Metrisch 2520] DC-Widerstand, max.: 0.18ohm usEccn: EAR99 RMS-Strom Irms: 2A Sättigungsstrom (Isat): 1.95A Produktlänge: 2.5mm euEccn: NLR Produktpalette: AOTA-B252008S Series productTraceability: Yes-Date/Lot Code Produktbreite: 2mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2995 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B252008S4R7MT | ABRACON | Power Inductors - SMD IND 4.7uH 1.75A 180mOhms | auf Bestellung 2910 Stücke: Lieferzeit 14-28 Tag (e) |
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| AOTA-B252008S4R7MT | Abracon LLC | Description: FIXED IND 4.7UH 1.75A 180MOHM SM Tolerance: ±20% Packaging: Cut Tape (CT) Package / Case: 1008 (2520 Metric) Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 180mOhm Max Frequency - Self Resonant: 20MHz Current - Saturation (Isat): 1.75A Inductance Frequency - Test: 1 MHz Supplier Device Package: 1008 Height - Seated (Max): 0.031" (0.80mm) Inductance: 4.7 µH Current Rating (Amps): 1.8 A | auf Bestellung 2640 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTA-B252008S4R7MT | ABRACON | Description: ABRACON - AOTA-B252008S4R7MT - Leistungsinduktivität (SMD), 4.7 µH, 2 A, Geschirmt, 1.95 A, AOTA-B252008S Series tariffCode: 85045000 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: AOTA-B252008S Series | auf Bestellung 2995 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B252010S100MT | ABRACON | Description: ABRACON - AOTA-B252010S100MT - Leistungsinduktivität (SMD), 10 µH, 1.4 A, Geschirmt, 1.7 A, AOTA-B252010S Series tariffCode: 85045000 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: AOTA-B252010S Series | auf Bestellung 2785 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B252010S100MT | ABRACON | Power Inductors - SMD IND 10uH 1.2A 420mOhms | auf Bestellung 1938 Stücke: Lieferzeit 14-28 Tag (e) |
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| AOTA-B252010S100MT | Abracon LLC | Description: FIXED IND 10UH 1.2A 420MOHM SMD Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 1008 (2520 Metric) Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 420mOhm Max Frequency - Self Resonant: 14MHz Current - Saturation (Isat): 1.5A Inductance Frequency - Test: 1 MHz Supplier Device Package: 1008 Height - Seated (Max): 0.039" (1.00mm) Inductance: 10 µH Current Rating (Amps): 1.2 A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B252010S100MT | ABRACON | Description: ABRACON - AOTA-B252010S100MT - Leistungsinduktivität (SMD), 10 µH, 1.4 A, Geschirmt, 1.7 A, AOTA-B252010S Series tariffCode: 85045000 Produkthöhe: 1mm rohsCompliant: YES Induktivität: 10µH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: 1008 [Metrisch 2520] DC-Widerstand, max.: 0.42ohm usEccn: EAR99 RMS-Strom Irms: 1.4A Sättigungsstrom (Isat): 1.7A Produktlänge: 2.5mm euEccn: NLR Produktpalette: AOTA-B252010S Series productTraceability: Yes-Date/Lot Code Produktbreite: 2mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2785 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B252010S100MT | Abracon Corporation | AOTA-B252010S100MT | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B252010S100MT | Abracon LLC | Description: FIXED IND 10UH 1.2A 420MOHM SMD Tolerance: ±20% Packaging: Cut Tape (CT) Package / Case: 1008 (2520 Metric) Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 420mOhm Max Frequency - Self Resonant: 14MHz Current - Saturation (Isat): 1.5A Inductance Frequency - Test: 1 MHz Supplier Device Package: 1008 Height - Seated (Max): 0.039" (1.00mm) Inductance: 10 µH Current Rating (Amps): 1.2 A | auf Bestellung 2626 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTA-B252010S1R0MT | Abracon Corporation | AOTA-B252010S1R0MT | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B252010S1R0MT | ABRACON | Description: ABRACON - AOTA-B252010S1R0MT - Leistungsinduktivität (SMD), 1 µH, 4.7 A, Geschirmt, 5.4 A, AOTA-B252010S Series tariffCode: 85045000 Produkthöhe: 1mm rohsCompliant: YES Induktivität: 1µH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: 1008 [Metrisch 2520] DC-Widerstand, max.: 0.03ohm usEccn: EAR99 RMS-Strom Irms: 4.7A Sättigungsstrom (Isat): 5.4A Produktlänge: 2.5mm euEccn: NLR Produktpalette: AOTA-B252010S Series productTraceability: Yes-Date/Lot Code Produktbreite: 2mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 1900 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B252010S1R0MT | ABRACON | Description: ABRACON - AOTA-B252010S1R0MT - Leistungsinduktivität (SMD), 1 µH, 4.7 A, Geschirmt, 5.4 A, AOTA-B252010S Series tariffCode: 85045000 Produkthöhe: 1mm rohsCompliant: YES Induktivität: 1µH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: 1008 [Metrisch 2520] DC-Widerstand, max.: 0.03ohm usEccn: EAR99 RMS-Strom Irms: 4.7A Sättigungsstrom (Isat): 5.4A Produktlänge: 2.5mm euEccn: NLR Produktpalette: AOTA-B252010S Series productTraceability: Yes-Date/Lot Code Produktbreite: 2mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 1900 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B252010S1R0MT | ABRACON | Power Inductors - SMD IND 1uH 4.5A 30mOhms | auf Bestellung 3157 Stücke: Lieferzeit 14-28 Tag (e) |
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| AOTA-B252010S1R5MT | Abracon LLC | Description: FIXED IND 1.5UH 3.6A 42MOHM SMD Tolerance: ±20% Packaging: Cut Tape (CT) Package / Case: 1008 (2520 Metric) Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 42mOhm Max Frequency - Self Resonant: 35MHz Current - Saturation (Isat): 3.7A Inductance Frequency - Test: 1 MHz Supplier Device Package: 1008 Height - Seated (Max): 0.039" (1.00mm) Inductance: 1.5 µH Current Rating (Amps): 3.6 A | auf Bestellung 2597 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTA-B252010S1R5MT | ABRACON | Power Inductors - SMD IND 1.5uH 3.6A 42mOhms | auf Bestellung 2870 Stücke: Lieferzeit 14-28 Tag (e) |
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| AOTA-B252010S1R5MT | ABRACON | Description: ABRACON - AOTA-B252010S1R5MT - Leistungsinduktivität (SMD), 1.5 µH, 4.1 A, Geschirmt, 4 A, AOTA-B252010S Series tariffCode: 85045000 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: AOTA-B252010S Series | auf Bestellung 2545 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B252010S1R5MT | Abracon LLC | Description: FIXED IND 1.5UH 3.6A 42MOHM SMD Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 1008 (2520 Metric) Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 42mOhm Max Frequency - Self Resonant: 35MHz Current - Saturation (Isat): 3.7A Inductance Frequency - Test: 1 MHz Supplier Device Package: 1008 Height - Seated (Max): 0.039" (1.00mm) Inductance: 1.5 µH Current Rating (Amps): 3.6 A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B252010S1R5MT | ABRACON | Description: ABRACON - AOTA-B252010S1R5MT - Leistungsinduktivität (SMD), 1.5 µH, 4.1 A, Geschirmt, 4 A, AOTA-B252010S Series tariffCode: 85045000 Produkthöhe: 1mm rohsCompliant: YES Induktivität: 1.5µH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: 1008 [Metrisch 2520] DC-Widerstand, max.: 0.042ohm usEccn: EAR99 RMS-Strom Irms: 4.1A Sättigungsstrom (Isat): 4A Produktlänge: 2.5mm euEccn: NLR Produktpalette: AOTA-B252010S Series productTraceability: Yes-Date/Lot Code Produktbreite: 2mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2545 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B252010S2R2MT | Abracon LLC | Description: FIXED IND 2.2UH 2.3A 65MOHM SMD Tolerance: ±20% Packaging: Cut Tape (CT) Package / Case: 1008 (2520 Metric) Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 65mOhm Max Frequency - Self Resonant: 27MHz Current - Saturation (Isat): 3.2A Inductance Frequency - Test: 1 MHz Supplier Device Package: 1008 Height - Seated (Max): 0.039" (1.00mm) Inductance: 2.2 µH Current Rating (Amps): 2.3 A | auf Bestellung 1337 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTA-B252010S2R2MT | ABRACON | Description: ABRACON - AOTA-B252010S2R2MT - Leistungsinduktivität (SMD), 2.2 µH, 2.6 A, Geschirmt, 3.5 A, AOTA-B252010S Series tariffCode: 85045000 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: AOTA-B252010S Series | auf Bestellung 2595 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B252010S2R2MT | Abracon LLC | Description: FIXED IND 2.2UH 2.3A 65MOHM SMD Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 1008 (2520 Metric) Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 65mOhm Max Frequency - Self Resonant: 27MHz Current - Saturation (Isat): 3.2A Inductance Frequency - Test: 1 MHz Supplier Device Package: 1008 Height - Seated (Max): 0.039" (1.00mm) Inductance: 2.2 µH Current Rating (Amps): 2.3 A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B252010S2R2MT | ABRACON | Power Inductors - SMD IND 2.2uH 2.3A 65mOhms | auf Bestellung 2435 Stücke: Lieferzeit 14-28 Tag (e) |
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| AOTA-B252010S2R2MT | ABRACON | Description: ABRACON - AOTA-B252010S2R2MT - Leistungsinduktivität (SMD), 2.2 µH, 2.6 A, Geschirmt, 3.5 A, AOTA-B252010S Series tariffCode: 85045000 Produkthöhe: 1mm rohsCompliant: YES Induktivität: 2.2µH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: 1008 [Metrisch 2520] DC-Widerstand, max.: 0.065ohm usEccn: EAR99 RMS-Strom Irms: 2.6A Sättigungsstrom (Isat): 3.5A Produktlänge: 2.5mm euEccn: NLR Produktpalette: AOTA-B252010S Series productTraceability: Yes-Date/Lot Code Produktbreite: 2mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2595 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B252010S3R3MT | ABRACON | Description: ABRACON - AOTA-B252010S3R3MT - Leistungsinduktivität (SMD), 3.3 µH, 2.2 A, Geschirmt, 2.9 A, AOTA-B252010S Series tariffCode: 85045000 Produkthöhe: 1mm rohsCompliant: YES Induktivität: 3.3µH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: 1008 [Metrisch 2520] DC-Widerstand, max.: 0.11ohm usEccn: EAR99 RMS-Strom Irms: 2.2A Sättigungsstrom (Isat): 2.9A Produktlänge: 2.5mm euEccn: NLR Produktpalette: AOTA-B252010S Series productTraceability: Yes-Date/Lot Code Produktbreite: 2mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B252010S3R3MT | Abracon LLC | Description: FIXED IND 3.3UH 1.9A 110MOHM SMD Tolerance: ±20% Packaging: Cut Tape (CT) Package / Case: 1008 (2520 Metric) Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 110mOhm Max Frequency - Self Resonant: 22MHz Current - Saturation (Isat): 2.6A Inductance Frequency - Test: 1 MHz Supplier Device Package: 1008 Height - Seated (Max): 0.039" (1.00mm) Inductance: 3.3 µH Current Rating (Amps): 1.9 A | auf Bestellung 2675 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTA-B252010S3R3MT | ABRACON | Power Inductors - SMD IND 3.3uH 1.9A 110mOhms | auf Bestellung 2748 Stücke: Lieferzeit 14-28 Tag (e) |
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| AOTA-B252010S3R3MT | ABRACON | Description: ABRACON - AOTA-B252010S3R3MT - Leistungsinduktivität (SMD), 3.3 µH, 2.2 A, Geschirmt, 2.9 A, AOTA-B252010S Series tariffCode: 85045000 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: AOTA-B252010S Series | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B252010S3R3MT | Abracon LLC | Description: FIXED IND 3.3UH 1.9A 110MOHM SMD Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 1008 (2520 Metric) Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 110mOhm Max Frequency - Self Resonant: 22MHz Current - Saturation (Isat): 2.6A Inductance Frequency - Test: 1 MHz Supplier Device Package: 1008 Height - Seated (Max): 0.039" (1.00mm) Inductance: 3.3 µH Current Rating (Amps): 1.9 A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B252010S4R7MT | Abracon LLC | Description: FIXED IND 4.7UH 1.6A 136MOHM SMD Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 1008 (2520 Metric) Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 136mOhm Max Frequency - Self Resonant: 19MHz Current - Saturation (Isat): 1.9A Inductance Frequency - Test: 1 MHz Supplier Device Package: 1008 Height - Seated (Max): 0.039" (1.00mm) Inductance: 4.7 µH Current Rating (Amps): 1.6 A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B252010S4R7MT | ABRACON | Power Inductors - SMD IND 4.7uH 1.6A 136mOhms | auf Bestellung 2657 Stücke: Lieferzeit 14-28 Tag (e) |
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| AOTA-B252010S4R7MT | Abracon Corporation | AOTA-B252010S4R7MT | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B252010S4R7MT | ABRACON | Description: ABRACON - AOTA-B252010S4R7MT - Leistungsinduktivität (SMD), 4.7 µH, 1.7 A, Geschirmt, 2.2 A, AOTA-B252010S Series tariffCode: 85045000 Produkthöhe: 1mm rohsCompliant: YES Induktivität: 4.7µH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: 1008 [Metrisch 2520] DC-Widerstand, max.: 0.136ohm usEccn: EAR99 RMS-Strom Irms: 1.7A Sättigungsstrom (Isat): 2.2A Produktlänge: 2.5mm euEccn: NLR Produktpalette: AOTA-B252010S Series productTraceability: Yes-Date/Lot Code Produktbreite: 2mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 1350 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B252010S4R7MT | Abracon LLC | Description: FIXED IND 4.7UH 1.6A 136MOHM SMD Tolerance: ±20% Packaging: Cut Tape (CT) Package / Case: 1008 (2520 Metric) Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 136mOhm Max Frequency - Self Resonant: 19MHz Current - Saturation (Isat): 1.9A Inductance Frequency - Test: 1 MHz Supplier Device Package: 1008 Height - Seated (Max): 0.039" (1.00mm) Inductance: 4.7 µH Current Rating (Amps): 1.6 A | auf Bestellung 2415 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTA-B252010S4R7MT | ABRACON | Description: ABRACON - AOTA-B252010S4R7MT - Leistungsinduktivität (SMD), 4.7 µH, 1.7 A, Geschirmt, 2.2 A, AOTA-B252010S Series tariffCode: 85045000 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: AOTA-B252010S Series | auf Bestellung 1350 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B252010SR33MT | ABRACON | Description: ABRACON - AOTA-B252010SR33MT - Leistungsinduktivität (SMD), 0.33 µH, 5.5 A, Geschirmt, 8.5 A, AOTA-B252010S Series tariffCode: 85045000 Produkthöhe: 1mm rohsCompliant: YES Induktivität: 330nH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: 1008 [Metrisch 2520] DC-Widerstand, max.: 0.016ohm usEccn: EAR99 RMS-Strom Irms: 5.5A Sättigungsstrom (Isat): 8.5A Produktlänge: 2.5mm euEccn: NLR Produktpalette: AOTA-B252010S Series productTraceability: Yes-Date/Lot Code Produktbreite: 2mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B252010SR33MT | Abracon LLC | Description: FIXED IND 0.33UH 5.0A 16MOHM SMD Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 1008 (2520 Metric) Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 16mOhm Max Frequency - Self Resonant: 95MHz Current - Saturation (Isat): 7.5A Inductance Frequency - Test: 1 MHz Supplier Device Package: 1008 Height - Seated (Max): 0.039" (1.00mm) Inductance: 330 nH Current Rating (Amps): 5 A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B252010SR33MT | ABRACON | Description: ABRACON - AOTA-B252010SR33MT - Leistungsinduktivität (SMD), 0.33 µH, 5.5 A, Geschirmt, 8.5 A, AOTA-B252010S Series tariffCode: 85045000 Produkthöhe: 1mm rohsCompliant: YES Induktivität: 330nH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: 1008 [Metrisch 2520] DC-Widerstand, max.: 0.016ohm usEccn: EAR99 RMS-Strom Irms: 5.5A Sättigungsstrom (Isat): 8.5A Produktlänge: 2.5mm euEccn: NLR Produktpalette: AOTA-B252010S Series productTraceability: Yes-Date/Lot Code Produktbreite: 2mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B252010SR33MT | ABRACON | Power Inductors - SMD IND 0.33uH 5A 16mOhms | auf Bestellung 3000 Stücke: Lieferzeit 14-28 Tag (e) |
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| AOTA-B252010SR33MT | Abracon LLC | Description: FIXED IND 0.33UH 5.0A 16MOHM SMD Tolerance: ±20% Packaging: Cut Tape (CT) Package / Case: 1008 (2520 Metric) Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 16mOhm Max Frequency - Self Resonant: 95MHz Current - Saturation (Isat): 7.5A Inductance Frequency - Test: 1 MHz Supplier Device Package: 1008 Height - Seated (Max): 0.039" (1.00mm) Inductance: 330 nH Current Rating (Amps): 5 A | auf Bestellung 2925 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTA-B252010SR47MT | Abracon LLC | Description: FIXED IND 0.47UH 5.7A 20MOHM SMD Tolerance: ±20% Packaging: Cut Tape (CT) Package / Case: 1008 (2520 Metric) Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 20mOhm Max Frequency - Self Resonant: 81MHz Current - Saturation (Isat): 6.5A Inductance Frequency - Test: 1 MHz Supplier Device Package: 1008 Height - Seated (Max): 0.039" (1.00mm) Inductance: 470 nH Current Rating (Amps): 5.7 A | auf Bestellung 2648 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTA-B252010SR47MT | ABRACON | Power Inductors - SMD IND 0.47uH 5.7A 20mOhms | auf Bestellung 1260 Stücke: Lieferzeit 14-28 Tag (e) |
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| AOTA-B252010SR47MT | ABRACON | Description: ABRACON - AOTA-B252010SR47MT - Leistungsinduktivität (SMD), 0.47 µH, 6.1 A, Geschirmt, 7 A, AOTA-B252010S Series tariffCode: 85045000 Produkthöhe: 1mm rohsCompliant: YES Induktivität: 0.47µH hazardous: false rohsPhthalatesCompliant: YES DC-Widerstand, max.: 0.02ohm usEccn: EAR99 Sättigungsstrom (Isat): 7A RMS-Strom Irms: 6.1A Produktlänge: 2.5mm euEccn: NLR Produktpalette: AOTA-B252010S Series productTraceability: Yes-Date/Lot Code Produktbreite: 2mm | auf Bestellung 2895 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B252010SR47MT | Abracon LLC | Description: FIXED IND 0.47UH 5.7A 20MOHM SMD Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 1008 (2520 Metric) Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 20mOhm Max Frequency - Self Resonant: 81MHz Current - Saturation (Isat): 6.5A Inductance Frequency - Test: 1 MHz Supplier Device Package: 1008 Height - Seated (Max): 0.039" (1.00mm) Inductance: 470 nH Current Rating (Amps): 5.7 A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B252010SR47MT | ABRACON | Description: ABRACON - AOTA-B252010SR47MT - Leistungsinduktivität (SMD), 0.47 µH, 6.1 A, Geschirmt, 7 A, AOTA-B252010S Series tariffCode: 85045000 Produkthöhe: 1mm rohsCompliant: YES Induktivität: 0.47µH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: 1008 [Metrisch 2520] DC-Widerstand, max.: 0.02ohm usEccn: EAR99 RMS-Strom Irms: 6.1A Sättigungsstrom (Isat): 7A Produktlänge: 2.5mm euEccn: NLR Produktpalette: AOTA-B252010S Series productTraceability: Yes-Date/Lot Code Produktbreite: 2mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2895 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B252010SR68MT | Abracon LLC | Description: FIXED IND 0.68UH 4.5A 29MOHM SMD Packaging: Cut Tape (CT) Tolerance: ±20% Package / Case: 1008 (2520 Metric) Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 29mOhm Max Frequency - Self Resonant: 63MHz Current - Saturation (Isat): 5.8A Inductance Frequency - Test: 1 MHz Supplier Device Package: 1008 Height - Seated (Max): 0.039" (1.00mm) Inductance: 680 nH Current Rating (Amps): 4.5 A | auf Bestellung 2700 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTA-B252010SR68MT | ABRACON | Description: ABRACON - AOTA-B252010SR68MT - Leistungsinduktivität (SMD), 0.68 µH, 5.2 A, Geschirmt, 6.6 A, AOTA-B252010S Series tariffCode: 85045000 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: AOTA-B252010S Series | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTA-B252010SR68MT | Abracon LLC | Description: FIXED IND 0.68UH 4.5A 29MOHM SMD Packaging: Tape & Reel (TR) Tolerance: ±20% Package / Case: 1008 (2520 Metric) Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 29mOhm Max Frequency - Self Resonant: 63MHz Current - Saturation (Isat): 5.8A Inductance Frequency - Test: 1 MHz Supplier Device Package: 1008 Height - Seated (Max): 0.039" (1.00mm) Inductance: 680 nH Current Rating (Amps): 4.5 A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTA-B252010SR68MT | ABRACON | Power Inductors - SMD IND 0.68uH 4.5A 29mOhms | auf Bestellung 2990 Stücke: Lieferzeit 14-28 Tag (e) |
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| AOTA-B252010SR68MT | ABRACON | Description: ABRACON - AOTA-B252010SR68MT - Leistungsinduktivität (SMD), 0.68 µH, 5.2 A, Geschirmt, 6.6 A, AOTA-B252010S Series tariffCode: 85045000 Produkthöhe: 1mm rohsCompliant: YES Induktivität: 680nH Bauart der Induktivität: Geschirmt Induktivitätstoleranz: ± 20% hazardous: false rohsPhthalatesCompliant: YES Bauform/Gehäuse der Induktivität: 1008 [Metrisch 2520] DC-Widerstand, max.: 0.029ohm usEccn: EAR99 RMS-Strom Irms: 5.2A Sättigungsstrom (Isat): 6.6A Produktlänge: 2.5mm euEccn: NLR Produktpalette: AOTA-B252010S Series productTraceability: Yes-Date/Lot Code Produktbreite: 2mm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTBEVEL.SET | SRA Soldering Products | Description: SET OF 13 SOLDERING IRON TIP - B Packaging: Bag For Use With/Related Products: Tesla, Hakko, Sunkko Irons Diameter: Assorted Length: Assorted Width: Assorted Height: Assorted Tip Shape: Bevel Tip Type: Soldering Part Status: Active | auf Bestellung 8 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTCHISEL.SET | SRA Soldering Products | Description: SET OF 10 SOLDERING IRON TIP - C Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Length: Assorted Width: Assorted Height: Assorted Tip Shape: Chisel Tip Type: Soldering Part Status: Active | auf Bestellung 10 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTCONICAL.SET | SRA Soldering Products | Description: SET OF 7 SOLDERING IRON TIP - CO Packaging: Bag For Use With/Related Products: Tesla, 469, 701, 702, 703, 703B, 768, 926, 927, 928, 936, 936A, 937, 937+, 9378, 968, 908, 938, 9378 Length: Assorted Width: Assorted Height: Assorted Tip Shape: Conical Tip Type: Soldering Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTE21115C | Alpha & Omega Semiconductor | P-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTE32136C | Alpha & Omega Semiconductor | 20V N-Channel MOSFET | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTF095A60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 38A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tj) Rds On (Max) @ Id, Vgs: 95mOhm @ 19A, 10V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 100 V | auf Bestellung 934 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTF095A60L | Alpha & Omega Semiconductor | N Channel Power Transistor | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10B60D | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 20A 42W TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 105 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A Supplier Device Package: TO-220F Td (on/off) @ 25°C: 10ns/72ns Switching Energy: 260µJ (on), 70µJ (off) Test Condition: 400V, 10A, 30Ohm, 15V Gate Charge: 17.4 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 40 A Power - Max: 42 W | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10B60D | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 10A; 16.7W; TO220F; Eoff: 0.16mJ; Eon: 0.35mJ Mounting: THT Pulsed collector current: 40A Turn-on time: 25ns Turn-off time: 80.8ns Type of transistor: IGBT Collector-emitter voltage: 600V Case: TO220F Gate-emitter voltage: ±20V Kind of package: tube Gate charge: 17.4nC Turn-on switching energy: 0.35mJ Turn-off switching energy: 0.16mJ Power dissipation: 16.7W Collector-emitter saturation voltage: 1.53V Collector current: 10A Anzahl je Verpackung: 1 Stücke | auf Bestellung 899 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOTF10B60D | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 20A 42000mW 3-Pin(3+Tab) TO-220F | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10B60D | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 10A; 16.7W; TO220F; Eoff: 0.16mJ; Eon: 0.35mJ Mounting: THT Pulsed collector current: 40A Turn-on time: 25ns Turn-off time: 80.8ns Type of transistor: IGBT Collector-emitter voltage: 600V Case: TO220F Gate-emitter voltage: ±20V Kind of package: tube Gate charge: 17.4nC Turn-on switching energy: 0.35mJ Turn-off switching energy: 0.16mJ Power dissipation: 16.7W Collector-emitter saturation voltage: 1.53V Collector current: 10A | auf Bestellung 899 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOTF10B60D2 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 23A 31200mW 3-Pin(3+Tab) TO-220F T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10B60D2 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 10A; 12W; TO220F; Eoff: 0.04mJ; Eon: 0.14mJ Mounting: THT Pulsed collector current: 20A Turn-on time: 26ns Turn-off time: 124ns Type of transistor: IGBT Collector-emitter voltage: 600V Case: TO220F Gate-emitter voltage: ±20V Kind of package: tube Gate charge: 9.4nC Turn-on switching energy: 0.14mJ Turn-off switching energy: 0.04mJ Power dissipation: 12W Collector-emitter saturation voltage: 1.55V Collector current: 10A | auf Bestellung 378 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOTF10B60D2 | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 10A TO-220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 98 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A Supplier Device Package: TO-220F Td (on/off) @ 25°C: 12ns/83ns Switching Energy: 140µJ (on), 40µJ (off) Test Condition: 400V, 5A, 60Ohm, 15V Gate Charge: 9.4 nC Part Status: Active Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 20 A Power - Max: 31.2 W | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10B60D2 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 10A; 12W; TO220F; Eoff: 0.04mJ; Eon: 0.14mJ Mounting: THT Pulsed collector current: 20A Turn-on time: 26ns Turn-off time: 124ns Type of transistor: IGBT Collector-emitter voltage: 600V Case: TO220F Gate-emitter voltage: ±20V Kind of package: tube Gate charge: 9.4nC Turn-on switching energy: 0.14mJ Turn-off switching energy: 0.04mJ Power dissipation: 12W Collector-emitter saturation voltage: 1.55V Collector current: 10A Anzahl je Verpackung: 1 Stücke | auf Bestellung 378 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOTF10B65M1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 10A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 263 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 12ns/91ns Switching Energy: 180µJ (on), 130µJ (off) Test Condition: 400V, 10A, 30Ohm, 15V Gate Charge: 24 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 30 A Power - Max: 30 W | auf Bestellung 122 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTF10B65M1 | ALPHA & OMEGA SEMICONDUCTOR | AOTF10B65M1 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10B65M1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 20A 30000mW 3-Pin(3+Tab) TO-220F Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10B65M1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 20A 30000mW 3-Pin(3+Tab) TO-220F Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10B65M2 | ALPHA & OMEGA SEMICONDUCTOR | AOTF10B65M2 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10B65M2 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 20A 30mW 3-Pin(3+Tab) TO-220F Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10B65M2 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 10A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 262 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 12ns/91ns Switching Energy: 180µJ (on), 130µJ (off) Test Condition: 400V, 10A, 30Ohm, 15V Gate Charge: 24 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 30 A Power - Max: 30 W | auf Bestellung 209 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTF10N50FD | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 10A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 250µA Supplier Device Package: TO-220F Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10N50FD | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220F Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10N50FD_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 10A TO220-3F Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 250µA Supplier Device Package: TO-220F Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10N60 | ALPHA&OMEGA | Transistor N-Channel MOSFET; 600V; 30V; 750mOhm; 10A; 50W; -55°C ~ 150°C; AOTF10N60 TAOTF10n60 Anzahl je Verpackung: 10 Stücke | auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOTF10N60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220F | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10N60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220F | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10N60 Produktcode: 119569 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| AOTF10N60 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.4A Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Gate charge: 31.1nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 863 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOTF10N60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 10A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10N60 | ALPHA&OMEGA | Transistor N-Channel MOSFET; 600V; 30V; 750mOhm; 10A; 50W; -55°C ~ 150°C; AOTF10N60 TAOTF10n60 Anzahl je Verpackung: 10 Stücke | auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOTF10N60 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.4A Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Gate charge: 31.1nC Kind of channel: enhanced | auf Bestellung 863 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOTF10N60CL | Alpha & Omega Semiconductor Inc. | Description: N Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tj) Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10N60CL_0C1 | Alpha & Omega Semiconductor Inc. | Description: MOSFET Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tj) Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10N60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 10A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Active Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10N60L_002 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 10A TO220-3F Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10N60_002 | Alpha & Omega Semiconductor Inc. | Description: MOSFET Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10N60_003 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 10A TO220-3F Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10N60_006 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 10A TO220-3F Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10N62 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH TO-220F Packaging: Tape & Reel (TR) Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10N65 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 10A 3-Pin(3+Tab) TO-220F | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10N65 Produktcode: 165192 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| AOTF10N65 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 10A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10N65 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6.2A; TO220F Drain-source voltage: 650V Drain current: 6.2A On-state resistance: 1Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 27.7nC Kind of channel: enhanced Gate-source voltage: ±30V Mounting: THT Case: TO220F Anzahl je Verpackung: 1 Stücke | auf Bestellung 624 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOTF10N65 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6.2A; TO220F Drain-source voltage: 650V Drain current: 6.2A On-state resistance: 1Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 27.7nC Kind of channel: enhanced Gate-source voltage: ±30V Mounting: THT Case: TO220F | auf Bestellung 624 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOTF10N90 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 900V 10A 3-Pin(3+Tab) TO-220F | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10N90 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 900V 10A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10T60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 10A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10T60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 10A TO220-3F Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10T60P | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.6A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.6A Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.7Ω Mounting: THT Gate charge: 26nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 217 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOTF10T60P | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.6A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.6A Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.7Ω Mounting: THT Gate charge: 26nC Kind of channel: enhanced | auf Bestellung 217 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOTF10T60P | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220F Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10T60P | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 10A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10T60PL | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 10A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF10T60_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V TO-220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Supplier Device Package: TO-220F | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF11C60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 11A TO220F | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF11C60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF11C60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF11C60P | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF11C60P | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 11A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2333 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF11C60PL | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 11A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2333 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF11C60P_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 11A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2333 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF11C60_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 11A TO220F | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF11N60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A Rds On (Max) @ Id, Vgs: 650mOhm @ 5.5A, 10V Power Dissipation (Max): 50W Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1656 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF11N60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF11N60L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 37.9W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 37.9W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.65Ω Mounting: THT Gate charge: 37nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF11N60L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 37.9W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 37.9W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.65Ω Mounting: THT Gate charge: 37nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF11N60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 11A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 5.5A, 10V Power Dissipation (Max): 37.9W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF11N62 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 620V 11A 3-Pin(3+Tab) TO-220F Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF11N62 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 620V 11A TO220-3F | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF11N62L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 620V 11A TO220-3F | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF11N70 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 700V 11A 3-Pin(3+Tab) TO-220F | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF11N70 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 7.2A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.2A Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.87Ω Mounting: THT Gate charge: 37.5nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 193 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOTF11N70 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 7.2A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.2A Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.87Ω Mounting: THT Gate charge: 37.5nC Kind of channel: enhanced | auf Bestellung 193 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOTF11N70 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 700V 11A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 870mOhm @ 5.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF11N70 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 700V 11A 3-Pin(3+Tab) TO-220F | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF11N70 | ALPHA&OMEGA | Transistor N-Channel MOSFET; 700V; 30V; 870mOhm; 11A; 50W; -55°C ~ 150°C; AOTF11N70 TAOTF11n70 Anzahl je Verpackung: 10 Stücke | auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOTF11N70_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 870mOhm @ 5.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF11S60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF11S60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 11A TO220F | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF11S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F | auf Bestellung 347 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOTF11S60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 11A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-220F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF11S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F | auf Bestellung 347 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOTF11S60_900 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH TO220 Packaging: Tube Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF11S65L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 11A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 399mOhm @ 5.5A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 100 V | auf Bestellung 2967 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTF11S65L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220F T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF125A60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 28A TO220F | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF125A60L | Alpha & Omega Semiconductor | N Channel Power Transistor | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF12N30 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 7.3A; TO220F Mounting: THT Case: TO220F Polarisation: unipolar Drain-source voltage: 300V Drain current: 7.3A Gate charge: 12.8nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 0.42Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF12N30 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 300V 11.5A 3-Pin(3+Tab) TO-220F T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF12N30 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 300V 11.5A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 6A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF12N30 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 7.3A; TO220F Mounting: THT Case: TO220F Polarisation: unipolar Drain-source voltage: 300V Drain current: 7.3A Gate charge: 12.8nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 0.42Ω Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF12N50 | Alpha & Omega Semiconductor | auf Bestellung 995 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| AOTF12N50 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 12A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF12N50L | Alpha & Omega Semiconductor Inc. | Description: MOSFET Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V Power Dissipation (Max): 50W Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF12N50_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF12N50_007 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF12N60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220F T/R | auf Bestellung 950 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOTF12N60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220F T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF12N60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220F T/R | auf Bestellung 944 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOTF12N60 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.7A Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 40nC Kind of channel: enhanced | auf Bestellung 126 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOTF12N60 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.7A Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 40nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 126 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOTF12N60 Produktcode: 129208 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| AOTF12N60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 12A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF12N60FD | ALPHA&OMEGA | Transistor N-Channel MOSFET; 600V; 30V; 650mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60FD TAOTF12n60fd Anzahl je Verpackung: 10 Stücke | auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOTF12N60FD | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 12A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF12N60FD | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220F Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF12N60FD_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V TO220F Packaging: Tube Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF12N60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 12A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V | auf Bestellung 388 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTF12N60_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET Packaging: Bulk Part Status: Last Time Buy | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF12N65 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 12A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF12N65 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220F | auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTF12N65 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220F | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF12N65 | ALPHA&OMEGA | Transistor N-Channel MOSFET; 650V; 30V; 720mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N65 TAOTF12n65 Anzahl je Verpackung: 10 Stücke | auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOTF12N65A | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 12A TO220F Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Supplier Device Package: TO-220F Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF12T50P | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 12A TO-220F | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF12T50P | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220F Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF12T50PL | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220F | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF12T50PL | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| AOTF12T60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 12A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1954 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF12T60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 12A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1954 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF12T60P | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220F Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF12T60P | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 12A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2028 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF12T60PL | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 12A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2028 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF12T60PL | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220F Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF13N50 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8.5A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8.5A Case: TO220F Gate-source voltage: ±30V On-state resistance: 510mΩ Mounting: THT Gate charge: 30.7nC Kind of channel: enhanced | auf Bestellung 746 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOTF13N50 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-220F | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF13N50 Produktcode: 180939 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| AOTF13N50 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-220F | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF13N50 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8.5A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8.5A Case: TO220F Gate-source voltage: ±30V On-state resistance: 510mΩ Mounting: THT Gate charge: 30.7nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 746 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOTF13N50 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 13A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 510mOhm @ 6.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF13N50L | Alpha & Omega Semiconductor Inc. | Description: MOSFET Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tj) Rds On (Max) @ Id, Vgs: 510mOhm @ 6.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF13N50_002 | Alpha & Omega Semiconductor Inc. | Description: MOSFET Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 510mOhm @ 6.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF14N50 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 9.6A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 9.6A Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 44nC Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF14N50 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 14A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2297 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF14N50 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 9.6A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 9.6A Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 44nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF14N50 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-220F Tube | auf Bestellung 879 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOTF14N50 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-220F Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF14N50FD | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 14A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 470mOhm @ 7A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF14N50L | Alpha & Omega Semiconductor Inc. | Description: MOSFET Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tj) Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V Power Dissipation (Max): 50W Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2297 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF14N50_002 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH TO220 Packaging: Tube Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF15B60D | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 30A 50W TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 196 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 15A Supplier Device Package: TO-220F Td (on/off) @ 25°C: 21ns/73ns Switching Energy: 420µJ (on), 110µJ (off) Test Condition: 400V, 15A, 20Ohm, 15V Gate Charge: 25.4 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 50 W | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF15B60D | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 15A; 25W; TO220F; Eoff: 0.11mJ; Eon: 0.42mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 25W Case: TO220F Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 25.4nC Kind of package: tube Turn-on time: 40ns Turn-off time: 83ns Collector-emitter saturation voltage: 1.6V Turn-off switching energy: 0.11mJ Turn-on switching energy: 0.42mJ | auf Bestellung 965 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOTF15B60D | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 30A 50000mW 3-Pin(3+Tab) TO-220F | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF15B60D | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 15A; 25W; TO220F; Eoff: 0.11mJ; Eon: 0.42mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 25W Case: TO220F Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 25.4nC Kind of package: tube Turn-on time: 40ns Turn-off time: 83ns Collector-emitter saturation voltage: 1.6V Turn-off switching energy: 0.11mJ Turn-on switching energy: 0.42mJ Anzahl je Verpackung: 1 Stücke | auf Bestellung 965 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOTF15B60D2 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 23A 42000mW 3-Pin(3+Tab) TO-220F | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF15B60D2 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 15A; 16.7W; TO220F; Eoff: 0.07mJ; Eon: 0.26mJ Mounting: THT Power dissipation: 16.7W Case: TO220F Kind of package: tube Turn-on time: 25ns Turn-off time: 80.8ns Type of transistor: IGBT Gate charge: 17.4nC Turn-on switching energy: 0.26mJ Turn-off switching energy: 0.07mJ Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector-emitter saturation voltage: 1.53V Collector current: 15A Pulsed collector current: 40A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF15B60D2 | Alpha & Omega Semiconductor Inc. | Description: IGBT 15A Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 105 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A Supplier Device Package: TO-220F Td (on/off) @ 25°C: 10ns/72ns Switching Energy: 260µJ (on), 70µJ (off) Test Condition: 400V, 10A, 30Ohm, 15V Gate Charge: 17.4 nC Part Status: Obsolete Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 40 A Power - Max: 42 W | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF15B60D2 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 15A; 16.7W; TO220F; Eoff: 0.07mJ; Eon: 0.26mJ Mounting: THT Power dissipation: 16.7W Case: TO220F Kind of package: tube Turn-on time: 25ns Turn-off time: 80.8ns Type of transistor: IGBT Gate charge: 17.4nC Turn-on switching energy: 0.26mJ Turn-off switching energy: 0.07mJ Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector-emitter saturation voltage: 1.53V Collector current: 15A Pulsed collector current: 40A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF15B65M1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 15A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 317 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 15ns/94ns Switching Energy: 290µJ (on), 200µJ (off) Test Condition: 400V, 15A, 20Ohm, 15V Gate Charge: 32 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 36 W | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF15B65M1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 15A; 14W; TO220F; Eoff: 0.2mJ; Eon: 0.29mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 14W Case: TO220F Gate-emitter voltage: ±30V Pulsed collector current: 45A Mounting: THT Gate charge: 32nC Kind of package: tube Turn-on time: 34ns Turn-off time: 135ns Collector-emitter saturation voltage: 1.7V Turn-off switching energy: 0.2mJ Turn-on switching energy: 0.29mJ | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF15B65M1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 30A 36000mW 3-Pin(3+Tab) TO-220F Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF15B65M1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 15A; 14W; TO220F; Eoff: 0.2mJ; Eon: 0.29mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 14W Case: TO220F Gate-emitter voltage: ±30V Pulsed collector current: 45A Mounting: THT Gate charge: 32nC Kind of package: tube Turn-on time: 34ns Turn-off time: 135ns Collector-emitter saturation voltage: 1.7V Turn-off switching energy: 0.2mJ Turn-on switching energy: 0.29mJ Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF15B65M2 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 30A 36000mW 3-Pin(3+Tab) TO-220F Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF15B65M2 | ALPHA & OMEGA SEMICONDUCTOR | AOTF15B65M2 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF15B65M2 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 15A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 298 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 15ns/94ns Switching Energy: 290µJ (on), 200µJ (off) Test Condition: 400V, 15A, 20Ohm, 15V Gate Charge: 32 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 36 W | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF15B65M3 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 15A TO-220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 263 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Supplier Device Package: TO-220F Td (on/off) @ 25°C: 10ns/68ns Switching Energy: 280µJ (on), 190µJ (off) Test Condition: 400V, 15A, 20Ohm, 15V Gate Charge: 25.4 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 30 W | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF15B65M3 | Alpha & Omega Semiconductor | 650V, 15A Alpha IGBT With soft and fast recovery anti-parallel diode | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF15B65M3 | ALPHA & OMEGA SEMICONDUCTOR | AOTF15B65M3 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF15B65MQ1 | Alpha & Omega Semiconductor | 650V, 15A Alpha IGBT Chip Transistor | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF15S60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V Power Dissipation (Max): 27.8W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-220F Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF15S60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220F T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF15S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220F T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOTF15S60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 15A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V Power Dissipation (Max): 27.8W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-220F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 100 V | auf Bestellung 1073 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTF15S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220F T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTF15S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220F T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF15S60L Produktcode: 143111 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| AOTF15S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220F T/R | auf Bestellung 996 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOTF15S65L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 15A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 841 pF @ 100 V | auf Bestellung 830 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTF15S65L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-220F T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF160A60L | Alpha & Omega Semiconductor | N Channel Power Transistor | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF160A60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 24A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tj) Rds On (Max) @ Id, Vgs: 160mOhm @ 12A, 10V Power Dissipation (Max): 34.7W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: TO-220F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V | auf Bestellung 615 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTF160A60L | Alpha & Omega Semiconductor | N Channel Power Transistor | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF16N50 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 11A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Case: TO220F Gate-source voltage: ±30V On-state resistance: 370mΩ Mounting: THT Gate charge: 42.8nC Kind of channel: enhanced | auf Bestellung 534 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOTF16N50 | ALPHA&OMEGA | Transistor N-Channel MOSFET; 500V; 30V; 370mOhm; 16A; 50W; -55°C ~ 150°C; AOTF16N50 TAOTF16n50 Anzahl je Verpackung: 10 Stücke | auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOTF16N50 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-220F | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF16N50 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 16A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 370mOhm @ 8A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2297 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF16N50 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-220F | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF16N50 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 11A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Case: TO220F Gate-source voltage: ±30V On-state resistance: 370mΩ Mounting: THT Gate charge: 42.8nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 534 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOTF16N50L | Alpha & Omega Semiconductor Inc. | Description: MOSFET Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 370mOhm @ 8A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2297 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF16N50_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH TO220 Packaging: Tube Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF16N50_002 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH TO220 Packaging: Tube Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF18N65 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 18A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 9A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF18N65L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 18A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 9A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF18N65L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-220F | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF18N65_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH TO220 Packaging: Tube Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF190A60CL | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220F Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF190A60CL | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220F Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF190A60CL | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 20A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tj) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 250µA Supplier Device Package: TO-220F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V | auf Bestellung 295 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTF190A60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 20A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 250µA Supplier Device Package: TO-220F Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V | auf Bestellung 522 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTF190A60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220F Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF190A60L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Case: TO220F Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Gate charge: 34nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF190A60L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Case: TO220F Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Gate charge: 34nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF20B65LN2 | Alpha & Omega Semiconductor | 650V, 20A Alpha IGBT With Soft and Fast Recovery Anti-Parallel Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF20B65LN2 | Alpha & Omega Semiconductor Inc. | Description: 650V, 20A ALPHAIGBT TM WITH SOFT | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF20B65M1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 20A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 322 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 26ns/122ns Switching Energy: 470µJ (on), 270µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 46 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 45 W | auf Bestellung 579 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTF20B65M1 | ALPHA & OMEGA SEMICONDUCTOR | AOTF20B65M1 THT IGBT transistors | auf Bestellung 781 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOTF20B65M1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 40A 45000mW 3-Pin(3+Tab) TO-220F Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF20B65M2 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 40A 45000mW 3-Pin(3+Tab) TO-220F Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF20B65M2 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 20A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 292 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 26ns/123ns Switching Energy: 580µJ (on), 280µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 46 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 45 W | auf Bestellung 802 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTF20B65M2 | ALPHA & OMEGA SEMICONDUCTOR | AOTF20B65M2 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF20C60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 20A TO220F | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF20C60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220F Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF20C60P | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF20C60P | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220F | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF20C60PL | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 20A | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF20N40L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 400V 20A 3-Pin(3+Tab) TO-220F | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF20N40L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 400V 20A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 250µA Supplier Device Package: TO-220F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF20N60 | ALPHA&OMEGA | Transistor N-Channel MOSFET; 600V; 30V; 370mOhm; 20A; 50W; -55°C ~ 150°C; AOTF20N60 TAOTF20n60 Anzahl je Verpackung: 5 Stücke | auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOTF20N60 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Case: TO220F Gate-source voltage: ±30V On-state resistance: 370mΩ Mounting: THT Gate charge: 61nC Kind of channel: enhanced | auf Bestellung 929 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOTF20N60 Produktcode: 143162 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| AOTF20N60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220F T/R | auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOTF20N60 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Case: TO220F Gate-source voltage: ±30V On-state resistance: 370mΩ Mounting: THT Gate charge: 61nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 929 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOTF20N60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220F T/R | auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTF20N60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 20A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 370mOhm @ 10A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF20N60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220F T/R | auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOTF20S60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220F T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF20S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220F T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF20S60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 20A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V Power Dissipation (Max): 37.8W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-220F Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V | auf Bestellung 976 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTF20S60_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH TO220 Packaging: Tube Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF20S60_900 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH TO220 Packaging: Tube Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF2142L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 40V 50A 3-Pin(3+Tab) TO-220F Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF2142L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 78A; 20W; TO220F Case: TO220F Mounting: THT Drain current: 78A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Power dissipation: 20W Polarisation: unipolar Gate charge: 45nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF2142L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 78A; 20W; TO220F Case: TO220F Mounting: THT Drain current: 78A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Power dissipation: 20W Polarisation: unipolar Gate charge: 45nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF2142L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 40V 50A 3-Pin(3+Tab) TO-220F Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF2144L | Alpha & Omega Semiconductor | N-Channel MOSFET | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| AOTF2146L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 40V 80A 3-Pin(3+Tab) TO-220F Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF2146L | Alpha & Omega Semiconductor Inc. | Description: N Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V Power Dissipation (Max): 8.3W (Ta), 29.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF2146L | ALPHA & OMEGA SEMICONDUCTOR | AOTF2146L THT N channel transistors | auf Bestellung 961 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOTF2210L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 200V 6.5A 3-Pin(3+Tab) TO-220F Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF2210L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH | auf Bestellung 790 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| AOTF22N50 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 22A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 11A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF22N50L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 22A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 11A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF22N50_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH TO220 Packaging: Tube Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF240L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 40V 20A/85A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V Power Dissipation (Max): 1.9W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-220F Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3510 pF @ 20 V | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTF240L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 40V 85A 3-Pin(3+Tab) TO-220F T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF240L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 40V 85A 3-Pin(3+Tab) TO-220F T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF240L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 60A; 20W; TO220F Case: TO220F Mounting: THT Drain current: 60A On-state resistance: 2.9mΩ Type of transistor: N-MOSFET Power dissipation: 20W Polarisation: unipolar Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF240L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 40V 85A 3-Pin(3+Tab) TO-220F T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF240L | ALPHA&OMEGA | Transistor N-Channel MOSFET; 40V; 20V; 4,7mOhm; 85A; 41W; -55°C ~ 175°C; AOTF240L TAOTF240l Anzahl je Verpackung: 10 Stücke | auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOTF240L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 40V 85A 3-Pin(3+Tab) TO-220F T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF240L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 60A; 20W; TO220F Case: TO220F Mounting: THT Drain current: 60A On-state resistance: 2.9mΩ Type of transistor: N-MOSFET Power dissipation: 20W Polarisation: unipolar Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF256L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 8.5A; 16W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 8.5A Power dissipation: 16W Case: TO220F Gate-source voltage: ±20V On-state resistance: 85mΩ Mounting: THT Gate charge: 7nC Kind of channel: enhanced | auf Bestellung 710 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOTF256L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 8.5A; 16W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 8.5A Power dissipation: 16W Case: TO220F Gate-source voltage: ±20V On-state resistance: 85mΩ Mounting: THT Gate charge: 7nC Kind of channel: enhanced | auf Bestellung 710 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOTF256L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 150V 3A/12A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V Power Dissipation (Max): 2.1W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF256L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 150V 12A 3-Pin(3+Tab) TO-220F | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF25S65 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 25A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 12.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 26.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1278 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF25S65 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 25A 3-Pin(3+Tab) TO-220F T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| AOTF25S65 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 16A; 50W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Power dissipation: 50W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 26.4nC Kind of channel: enhanced | auf Bestellung 627 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOTF25S65 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 16A; 50W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Power dissipation: 50W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 26.4nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 627 Stücke: Lieferzeit 7-14 Tag (e) |
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