Produkte > DMG
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||||||
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| DMG 110 | LOVATO ELECTRIC | Category: Power Network Meters and Analyzers Description: Meter: network parameters; for DIN rail mounting; LCD; DMG; 1A,5A IP rating: IP20 at terminal side; IP40 (from the front) Manufacturer series: DMG Kind of meter: digital; mounting Mounting: for DIN rail mounting Kind of measurement: indirect with 1A current transformer; indirect with 5A current transformer Kind of display used: LCD Measuring instrument features: multilanguage menu Type of meter: network parameters Interface: RS485 Kind of network: three-phase True effective value measurement: True RMS Illumination: yes Dimensions (W x H x D): 71.6x90x63mm AC current measuring accuracy: ±0.5% AC voltage measuring accuracy: ±0.5% Input current: 1A; 5A Active power measuring accuracy: ±1% Supply voltage: 100...240V AC; 120...250V DC Frequency measuring range: 45...65Hz AC voltage measuring range: 50...720V Measurement: active power; AC voltage; apparent power; energy; frequency; harmonics; power factor; reactive power | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG 110 | LOVATO ELECTRIC | Category: Power Network Meters and Analyzers Description: Meter: network parameters; for DIN rail mounting; LCD; DMG; 1A,5A IP rating: IP20 at terminal side; IP40 (from the front) Manufacturer series: DMG Kind of meter: digital; mounting Mounting: for DIN rail mounting Kind of measurement: indirect with 1A current transformer; indirect with 5A current transformer Kind of display used: LCD Measuring instrument features: multilanguage menu Type of meter: network parameters Interface: RS485 Kind of network: three-phase True effective value measurement: True RMS Illumination: yes Dimensions (W x H x D): 71.6x90x63mm AC current measuring accuracy: ±0.5% AC voltage measuring accuracy: ±0.5% Input current: 1A; 5A Active power measuring accuracy: ±1% Supply voltage: 100...240V AC; 120...250V DC Frequency measuring range: 45...65Hz AC voltage measuring range: 50...720V Measurement: active power; AC voltage; apparent power; energy; frequency; harmonics; power factor; reactive power Anzahl je Verpackung: 1 Stücke | auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG 210 | LOVATO ELECTRIC | DMG210L01 Power Network Meters and Analyzers | auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG 300 L01 | LOVATO ELECTRIC | Category: Power Network Meters and Analyzers Description: Meter: network parameters; for DIN rail mounting; LCD; 128x80 Related items: EXP1001; EXP1013; EXP1020 Manufacturer series: DMG Kind of meter: digital; mounting Measuring instrument features: FFT up to 31st harmonic; multilanguage menu Mounting: for DIN rail mounting Kind of measurement: indirect with 1A current transformer; indirect with 5A current transformer IP rating: IP20 at terminal side; IP40 (from the front) Kind of display used: LCD Type of meter: network parameters Kind of network: three-phase True effective value measurement: True RMS Illumination: yes AC current measuring range: 10mA...6A Dimensions (W x H x D): 71.6x90x63mm AC current measuring accuracy: ±0.2% AC voltage measuring accuracy: ±0.2% Active power measuring accuracy: ±0.5% AC voltage measuring range: 10...480V Frequency measuring range: 45...65Hz Display resolution: 128x80 Measurement: AC current; active power; AC voltage; apparent power; energy; frequency; power factor; reactive power Anzahl je Verpackung: 1 Stücke | auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG 300 L01 | LOVATO ELECTRIC | Category: Power Network Meters and Analyzers Description: Meter: network parameters; for DIN rail mounting; LCD; 128x80 Related items: EXP1001; EXP1013; EXP1020 Manufacturer series: DMG Kind of meter: digital; mounting Measuring instrument features: FFT up to 31st harmonic; multilanguage menu Mounting: for DIN rail mounting Kind of measurement: indirect with 1A current transformer; indirect with 5A current transformer IP rating: IP20 at terminal side; IP40 (from the front) Kind of display used: LCD Type of meter: network parameters Kind of network: three-phase True effective value measurement: True RMS Illumination: yes AC current measuring range: 10mA...6A Dimensions (W x H x D): 71.6x90x63mm AC current measuring accuracy: ±0.2% AC voltage measuring accuracy: ±0.2% Active power measuring accuracy: ±0.5% AC voltage measuring range: 10...480V Frequency measuring range: 45...65Hz Display resolution: 128x80 Measurement: AC current; active power; AC voltage; apparent power; energy; frequency; power factor; reactive power | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG 600 | LOVATO ELECTRIC | Category: Power Network Meters and Analyzers Description: Meter: network parameters; on panel; digital,mounting; LCD; 1A,5A Mounting: on panel Kind of meter: digital; mounting Related items: EXP8000 Kind of measurement: indirect with 1A current transformer; indirect with 5A current transformer IP rating: IP20 at terminal side; IP54 (from the front) Kind of display used: LCD Communictions protocol: Modbus RTU; TCP Measuring instrument features: multilanguage menu Type of meter: network parameters Kind of network: three-phase True effective value measurement: True RMS Mounting hole diameter: 92x92mm Dimensions (W x H x D): 96x96x73.5mm AC voltage measuring accuracy: ±0.5% AC current measuring accuracy: ±0.5% Input current: 1A; 5A Active power measuring accuracy: ±1% Supply voltage: 100...440V AC; 120...250V DC Frequency measuring range: 45...65Hz AC voltage measuring range: 50...720V Measurement: AC current; active power; AC voltage; apparent power; energy; frequency; power factor; reactive power Anzahl je Verpackung: 1 Stücke | auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG 600 | LOVATO ELECTRIC | Category: Power Network Meters and Analyzers Description: Meter: network parameters; on panel; digital,mounting; LCD; 1A,5A Mounting: on panel Kind of meter: digital; mounting Related items: EXP8000 Kind of measurement: indirect with 1A current transformer; indirect with 5A current transformer IP rating: IP20 at terminal side; IP54 (from the front) Kind of display used: LCD Communictions protocol: Modbus RTU; TCP Measuring instrument features: multilanguage menu Type of meter: network parameters Kind of network: three-phase True effective value measurement: True RMS Mounting hole diameter: 92x92mm Dimensions (W x H x D): 96x96x73.5mm AC voltage measuring accuracy: ±0.5% AC current measuring accuracy: ±0.5% Input current: 1A; 5A Active power measuring accuracy: ±1% Supply voltage: 100...440V AC; 120...250V DC Frequency measuring range: 45...65Hz AC voltage measuring range: 50...720V Measurement: AC current; active power; AC voltage; apparent power; energy; frequency; power factor; reactive power | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG 610 | LOVATO ELECTRIC | Category: Power Network Meters and Analyzers Description: Meter: network parameters; on panel; digital,mounting; LCD; 1A,5A Measurement: active power; AC voltage; apparent power; energy; frequency; power factor; reactive power Kind of meter: digital; mounting Interface: RS485 Related items: EXP8000 Kind of measurement: indirect with 1A current transformer; indirect with 5A current transformer IP rating: IP20 at terminal side; IP54 (from the front) Kind of display used: LCD Communictions protocol: Modbus RTU; TCP Measuring instrument features: multilanguage menu Type of meter: network parameters Mounting: on panel Kind of network: three-phase True effective value measurement: True RMS Mounting hole diameter: 92x92mm Dimensions (W x H x D): 96x96x73.5mm AC voltage measuring accuracy: ±0.5% AC current measuring accuracy: ±0.5% Active power measuring accuracy: ±1% Input current: 1A; 5A Frequency measuring range: 45...65Hz AC voltage measuring range: 50...720V Supply voltage: 100...440V AC; 120...250V DC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG-02P-14-00A(H) | NINGBO DEGSON ELECTRICAL CO.LTD | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| DMG-AF-04-H | Adam Technologies | DMG-AF-04-H | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG-W15-3C2C-WHT-180 | MOBILE MARK | Description: MOBILE MARK - DMG-W15-3C2C-WHT-180 - HF-Antenne, 4.9 bis 6GHz, GNNS / GPS / Glonass / Galileo / BeiDou / QZSS / WiFi, 2.5dBi, 10W tariffCode: 85291069 rohsCompliant: YES Antenne: GNNS / GPS / Glonass / Galileo / BeiDou / QZSS / WiFi Verstärkung: 2.5dBi hazardous: false rohsPhthalatesCompliant: YES Eingangsimpedanz: 50ohm usEccn: EAR99 VSWR: 2 Frequenz, min.: 4.9GHz Antennenmontage: SMA-Steckverbinder euEccn: NLR Produktpalette: DM Series Eingangsleistung: 10W productTraceability: No Antennenpolarisation: - Frequenz, max.: 6GHz SVHC: To Be Advised | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1012T | Diodes Incorporated | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1012T-13 | DIODES INC. | Description: DIODES INC. - DMG1012T-13 - Leistungs-MOSFET, n-Kanal, 20 V, 630 mA, 0.3 ohm, SOT-523, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 630mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 280mW Bauform - Transistor: SOT-523 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.3ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 6020 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1012T-13 | Diodes Inc | Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-523 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1012T-13 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-523 T/R | auf Bestellung 1730000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012T-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 630MA SOT523 T&R Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 280mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V | auf Bestellung 850000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1012T-13 | DIODES INC. | Description: DIODES INC. - DMG1012T-13 - Leistungs-MOSFET, n-Kanal, 20 V, 630 mA, 0.3 ohm, SOT-523, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 630mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 280mW Bauform - Transistor: SOT-523 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.3ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 6020 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1012T-13 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-523 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1012T-13 | Diodes Incorporated | MOSFETs 20V N-Ch Enhance Mode MOSFET | auf Bestellung 24212 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1012T-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 630MA SOT523 T&R Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 280mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V | auf Bestellung 850913 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1012T-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-523 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1012T-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-523 T/R | auf Bestellung 435000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012T-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 630MA SOT-523 Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 280mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V | auf Bestellung 396477 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1012T-7 | DIODES/ZETEX | N-MOSFET 20V; 0.45A; 0.28W; 2kV; -55..+150°C DMG1012T-7 TDMG1012T-7 Anzahl je Verpackung: 3000 Stücke | auf Bestellung 700 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1012T-7 | DIODES INC. | Description: DIODES INC. - DMG1012T-7 - Leistungs-MOSFET, n-Kanal, 20 V, 630 mA, 0.4 ohm, SOT-523, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 630mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 280mW Bauform - Transistor: SOT-523 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.4ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1083197 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1012T-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-523 T/R | auf Bestellung 192000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012T-7 | HXY MOSFET | Transistor N-Channel MOSFET; 20V; 8V; 150mOhm; 800mA; 150mW; -55°C ~ 150°C; Equivalent: DMG1012T-13; DMG1012T-7 HXY MOSFET TDMG1012T-7 HXY Anzahl je Verpackung: 250 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1012T-7 | Diodes Incorporated | MOSFETs MOSFET N-CHANNEL SOT-523 | auf Bestellung 588680 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1012T-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-523 T/R | auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012T-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-523 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1012T-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 630MA SOT-523 Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 280mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V | auf Bestellung 396000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1012T-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.28W; SOT523; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.45A Power dissipation: 0.28W Case: SOT523 Gate-source voltage: ±6V On-state resistance: 0.3Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke | auf Bestellung 2503 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1012T-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.28W; SOT523; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.45A Power dissipation: 0.28W Case: SOT523 Gate-source voltage: ±6V On-state resistance: 0.3Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD | auf Bestellung 2503 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012T-7 | DIODES INC. | Description: DIODES INC. - DMG1012T-7 - Leistungs-MOSFET, n-Kanal, 20 V, 630 mA, 0.4 ohm, SOT-523, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 630mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 280mW Bauform - Transistor: SOT-523 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.4ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1083197 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1012T-7 | Diodes Inc | Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-523 T/R | auf Bestellung 102000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1012T-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-523 T/R | auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012T-7 | DIODES/ZETEX | N-MOSFET 20V; 0.45A; 0.28W; 2kV; -55..+150°C DMG1012T-7 TDMG1012T-7 Anzahl je Verpackung: 3000 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1012T-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-523 T/R | auf Bestellung 435000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012T-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-523 T/R | auf Bestellung 192000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012T-7 NA1.. | DIODES/ZETEX | N-MOSFET 20V; 0.45A; 0.28W; 2kV; -55..+150°C DMG1012T-7 TDMG1012T-7 Anzahl je Verpackung: 3000 Stücke | auf Bestellung 89 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1012TQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A Automotive AEC-Q101 3-Pin SOT-523 T/R | auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012TQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.28W; SOT523; ESD Mounting: SMD Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Case: SOT523 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.45A Power dissipation: 0.28W On-state resistance: 0.3Ω Gate-source voltage: ±6V Kind of package: 7 inch reel; tape Application: automotive industry | auf Bestellung 6045 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012TQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A Automotive AEC-Q101 3-Pin SOT-523 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1012TQ-7 | Diodes Inc | Trans MOSFET N-CH 20V 0.63A Automotive 3-Pin SOT-523 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1012TQ-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 630MA SOT523 Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 280mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V Qualification: AEC-Q101 | auf Bestellung 1196072 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1012TQ-7 | DIODES INC. | Description: DIODES INC. - DMG1012TQ-7 - Leistungs-MOSFET, n-Kanal, 20 V, 630 mA, 0.4 ohm, SOT-523, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 630mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 280mW Bauform - Transistor: SOT-523 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.4ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 28556 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1012TQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A Automotive AEC-Q101 3-Pin SOT-523 T/R | auf Bestellung 2349000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012TQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.28W; SOT523; ESD Mounting: SMD Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Case: SOT523 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.45A Power dissipation: 0.28W On-state resistance: 0.3Ω Gate-source voltage: ±6V Kind of package: 7 inch reel; tape Application: automotive industry Anzahl je Verpackung: 1 Stücke | auf Bestellung 6045 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1012TQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A Automotive AEC-Q101 3-Pin SOT-523 T/R | auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1012TQ-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 630MA SOT523 Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 280mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1194000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1012TQ-7 | DIODES INC. | Description: DIODES INC. - DMG1012TQ-7 - Leistungs-MOSFET, n-Kanal, 20 V, 630 mA, 0.4 ohm, SOT-523, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 630mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 280mW Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 280mW Bauform - Transistor: SOT-523 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.3ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.4ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 28906 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1012TQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A Automotive AEC-Q101 3-Pin SOT-523 T/R | auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012TQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: | auf Bestellung 300599 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1012TQ-7-52 | Diodes Zetex | N-Channel Enhancement Mode MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1012TQ-7-52 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT523 T&R Packaging: Bulk Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 280mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.737 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1012UW | DIODES INC. | Description: DIODES INC. - DMG1012UW - Leistungs-MOSFET, Anreicherungstyp, n-Kanal, 20 V, 1 A, 0.45 ohm, SOT-323, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 500mV euEccn: NLR Verlustleistung: 290mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.45ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 185345 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1012UW | ams OSRAM | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| DMG1012UW | Diodes Incorporated | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1012UW | DIODES INC. | Description: DIODES INC. - DMG1012UW - Leistungs-MOSFET, Anreicherungstyp, n-Kanal, 20 V, 1 A, 0.45 ohm, SOT-323, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 500mV euEccn: NLR Verlustleistung: 290mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.45ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 193125 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1012UW-7 | Diodes Zetex | Trans MOSFET N-CH 20V 1A 3-Pin SOT-323 T/R | auf Bestellung 138000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012UW-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 1A SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 290mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V | auf Bestellung 135312 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1012UW-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1A; 0.29W; SOT323; ESD Mounting: SMD Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Case: SOT323 Polarisation: unipolar Drain-source voltage: 20V Drain current: 1A Power dissipation: 0.29W On-state resistance: 0.3Ω Gate-source voltage: ±6V Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke | auf Bestellung 3113 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1012UW-7 | Diodes Zetex | Trans MOSFET N-CH 20V 1A 3-Pin SOT-323 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012UW-7 | DIODES INC. | Description: DIODES INC. - DMG1012UW-7 - Leistungs-MOSFET, n-Kanal, 20 V, 1 A, 0.3 ohm, SOT-323, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Verlustleistung Pd: 290mW Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 290mW Bauform - Transistor: SOT-323 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.3ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.3ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 8768 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1012UW-7 | Diodes Zetex | Trans MOSFET N-CH 20V 1A 3-Pin SOT-323 T/R | auf Bestellung 2740 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012UW-7 | DIODES/ZETEX | N-MOSFET 20V 1A 450mΩ 290mW DMG1012UW-7 Diodes TDMG1012uw Anzahl je Verpackung: 3000 Stücke | auf Bestellung 21000 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1012UW-7 | Diodes Zetex | Trans MOSFET N-CH 20V 1A 3-Pin SOT-323 T/R | auf Bestellung 138000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012UW-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 1A SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 290mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V | auf Bestellung 135000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1012UW-7 | Diodes Zetex | Trans MOSFET N-CH 20V 1A 3-Pin SOT-323 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012UW-7 | DIODES/ZETEX | N-MOSFET 20V 1A 450mΩ 290mW DMG1012UW-7 Diodes TDMG1012uw Anzahl je Verpackung: 3000 Stücke | auf Bestellung 1200 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1012UW-7 | Diodes Incorporated | MOSFETs MOSFET N-CHANNEL SOT-323 | auf Bestellung 98693 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1012UW-7 | Diodes Zetex | Trans MOSFET N-CH 20V 1A 3-Pin SOT-323 T/R | auf Bestellung 2740 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012UW-7 | DIODES INC. | Description: DIODES INC. - DMG1012UW-7 - Leistungs-MOSFET, n-Kanal, 20 V, 1 A, 0.3 ohm, SOT-323, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 290mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.3ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 5941 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1012UW-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1A; 0.29W; SOT323; ESD Mounting: SMD Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Case: SOT323 Polarisation: unipolar Drain-source voltage: 20V Drain current: 1A Power dissipation: 0.29W On-state resistance: 0.3Ω Gate-source voltage: ±6V Kind of package: 7 inch reel; tape | auf Bestellung 3113 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012UW-7 | Diodes Zetex | Trans MOSFET N-CH 20V 1A 3-Pin SOT-323 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012UW-7 | Diodes Inc | Trans MOSFET N-CH 20V 1A 3-Pin SOT-323 T/R | auf Bestellung 498000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1012UWQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT323 T&R Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 950mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 460mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 16 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 317970 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1012UWQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V SOT323 T&R 3K | auf Bestellung 7285 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1012UWQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.95A 3-Pin SOT-323 T/R Automotive AEC-Q101 | auf Bestellung 312000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012UWQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 6A; 610mW; SOT323 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Case: SOT323 Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 6A Drain current: 0.75A Gate charge: 1nC Power dissipation: 0.61W On-state resistance: 0.75Ω Gate-source voltage: ±6V Kind of package: 7 inch reel; tape Application: automotive industry | auf Bestellung 2474 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012UWQ-7 | Diodes Inc | MOSFET BVDSS: 8V24V SOT323 T&R 3K | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1012UWQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT323 T&R Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 950mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 460mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 16 V Qualification: AEC-Q101 | auf Bestellung 315000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1012UWQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 6A; 610mW; SOT323 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Case: SOT323 Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 6A Drain current: 0.75A Gate charge: 1nC Power dissipation: 0.61W On-state resistance: 0.75Ω Gate-source voltage: ±6V Kind of package: 7 inch reel; tape Application: automotive industry Anzahl je Verpackung: 1 Stücke | auf Bestellung 2474 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1012UWQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.95A 3-Pin SOT-323 T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1013T | DIODES | 10 SOT-523 | auf Bestellung 60000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1013T-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.33A; Idm: -6A; 0.27W; ESD Version: ESD Drain current: -0.33A Power dissipation: 0.27W On-state resistance: 0.7Ω Kind of package: 7 inch reel; tape Gate-source voltage: ±6V Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: SOT523 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -6A Anzahl je Verpackung: 1 Stücke | auf Bestellung 2840 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1013T-7 | Diodes Inc | Trans MOSFET P-CH 20V 0.46A 3-Pin SOT-523 T/R | auf Bestellung 69000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1013T-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.46A 3-Pin SOT-523 T/R | auf Bestellung 186000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013T-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.46A 3-Pin SOT-523 T/R | auf Bestellung 99000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013T-7 | DIODES INC. | Description: DIODES INC. - DMG1013T-7 - Leistungs-MOSFET, p-Kanal, 20 V, 460 mA, 0.7 ohm, SOT-523, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 460mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 270mW Bauform - Transistor: SOT-523 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.7ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 93049 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1013T-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 460MA SOT523 Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 460mA (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 350mA, 4.5V Power Dissipation (Max): 270mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.622 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V | auf Bestellung 84164 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1013T-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.46A 3-Pin SOT-523 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1013T-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.46A 3-Pin SOT-523 T/R | auf Bestellung 186000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013T-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 460MA SOT523 Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 460mA (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 350mA, 4.5V Power Dissipation (Max): 270mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.622 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V | auf Bestellung 84000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1013T-7 | Diodes Incorporated | MOSFETs MOSFET P-CHANNEL SOT-523 | auf Bestellung 1572160 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1013T-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.46A 3-Pin SOT-523 T/R | auf Bestellung 99000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013T-7 | DIODES INC. | Description: DIODES INC. - DMG1013T-7 - Leistungs-MOSFET, p-Kanal, 20 V, 460 mA, 0.7 ohm, SOT-523, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 460mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 270mW Bauform - Transistor: SOT-523 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.7ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 93049 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1013T-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.33A; Idm: -6A; 0.27W; ESD Version: ESD Drain current: -0.33A Power dissipation: 0.27W On-state resistance: 0.7Ω Kind of package: 7 inch reel; tape Gate-source voltage: ±6V Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: SOT523 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -6A | auf Bestellung 2840 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013T-7 PA1. | DIODES/ZETEX | P-MOSFET 20V 460mA 270mW 700mΩ DMG1013T-7 Diodes TDMG1013T-7 Anzahl je Verpackung: 100 Stücke | auf Bestellung 420 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1013T-7 PA1. | DIODES/ZETEX | P-MOSFET 20V 460mA 270mW 700mΩ DMG1013T-7 Diodes TDMG1013T-7 Anzahl je Verpackung: 100 Stücke | auf Bestellung 1230 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1013TQ-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 460MA SOT523 Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 460mA (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 350mA, 4.5V Power Dissipation (Max): 270mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.58 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1506000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1013TQ-7 | DIODES INC. | Description: DIODES INC. - DMG1013TQ-7 - Leistungs-MOSFET, p-Kanal, 20 V, 460 mA, 0.5 ohm, SOT-523, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 460mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 270mW Bauform - Transistor: SOT-523 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.5ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1915 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1013TQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V SOT523 T&R 3K | auf Bestellung 221945 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1013TQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.46A 3-Pin SOT-523 T/R Automotive AEC-Q101 | auf Bestellung 1656000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013TQ-7 | DIODES INC. | Description: DIODES INC. - DMG1013TQ-7 - Leistungs-MOSFET, p-Kanal, 20 V, 460 mA, 0.5 ohm, SOT-523, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 460mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 270mW Bauform - Transistor: SOT-523 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.5ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1915 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1013TQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -330mA; Idm: -6A; 270mW Drain current: -0.33A Gate charge: 580pC Power dissipation: 0.27W On-state resistance: 1.3Ω Kind of package: 7 inch reel; tape Gate-source voltage: ±6V Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: SOT523 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -6A | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1013TQ-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 460MA SOT523 Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 460mA (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 350mA, 4.5V Power Dissipation (Max): 270mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.58 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1507876 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1013TQ-7 | Diodes Inc | 20V P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1013UW-7 | DIODES/ZETEX | Transistor P-MOSFET; 20V; 6V; 1,5Ohm; 820mA; 310mW; -55°C~150°C; DMG1013UW-7 TDMG1013UW-7 Diodes Anzahl je Verpackung: 3000 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1013UW-7 | Diodes Incorporated | MOSFETs P-Ch -20V VDSS Enchanced Mosfet | auf Bestellung 85942 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1013UW-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.82A 3-Pin SOT-323 T/R | auf Bestellung 915000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013UW-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323; ESD Version: ESD Drain current: -540mA Power dissipation: 0.31W On-state resistance: 1.5Ω Kind of package: 7 inch reel; tape Gate-source voltage: ±6V Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: SOT323 Polarisation: unipolar Drain-source voltage: -20V | auf Bestellung 9732 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013UW-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 820MA SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 820mA (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.622 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V | auf Bestellung 57000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1013UW-7 | Diodes Inc | Trans MOSFET P-CH 20V 0.82A 3-Pin SOT-323 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1013UW-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.82A 3-Pin SOT-323 T/R | auf Bestellung 915000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013UW-7 | DIODES INC. | Description: DIODES INC. - DMG1013UW-7 - Leistungs-MOSFET, p-Kanal, 20 V, 820 mA, 0.75 ohm, SOT-323, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 820mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 310mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.75ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 32462 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1013UW-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323; ESD Version: ESD Drain current: -540mA Power dissipation: 0.31W On-state resistance: 1.5Ω Kind of package: 7 inch reel; tape Gate-source voltage: ±6V Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: SOT323 Polarisation: unipolar Drain-source voltage: -20V Anzahl je Verpackung: 1 Stücke | auf Bestellung 9732 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1013UW-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.82A 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1013UW-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.82A 3-Pin SOT-323 T/R | auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013UW-7 | DIODES INC. | Description: DIODES INC. - DMG1013UW-7 - Leistungs-MOSFET, p-Kanal, 20 V, 820 mA, 0.75 ohm, SOT-323, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 820mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 310mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.75ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 30327 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1013UW-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 820MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 820mA (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.622 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V | auf Bestellung 57618 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1013UW-7 | Diodes Incorporated | MOSFET P-CH 20V 820MA SOT323 | auf Bestellung 1370 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1013UW-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.82A 3-Pin SOT-323 T/R | auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013UWQ-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 820MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 820mA (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 592235 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1013UWQ-13 | Diodes Zetex | Trans MOSFET P-CH 20V 0.82A Automotive AEC-Q101 3-Pin SOT-323 T/R | auf Bestellung 4890000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013UWQ-13 | Diodes Zetex | Trans MOSFET P-CH 20V 0.82A Automotive AEC-Q101 3-Pin SOT-323 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013UWQ-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 820MA SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 820mA (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 580000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1013UWQ-13 | DIODES INC. | Description: DIODES INC. - DMG1013UWQ-13 - Leistungs-MOSFET, p-Kanal, 20 V, 820 mA, 0.5 ohm, SOT-323, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 820mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 310mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.5ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 7430 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1013UWQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: | auf Bestellung 4170 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1013UWQ-13 | Diodes Zetex | Trans MOSFET P-CH 20V 0.82A Automotive AEC-Q101 3-Pin SOT-323 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013UWQ-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -540mA; Idm: -3A; 310mW Drain current: -540mA Gate charge: 622.4pC Power dissipation: 0.31W On-state resistance: 1.5Ω Kind of package: 13 inch reel; tape Gate-source voltage: ±6V Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: SOT323 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -3A | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1013UWQ-13 | Diodes Inc | Trans MOSFET P-CH 20V 0.82A Automotive 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1013UWQ-13 | DIODES INC. | Description: DIODES INC. - DMG1013UWQ-13 - Leistungs-MOSFET, p-Kanal, 20 V, 820 mA, 0.5 ohm, SOT-323, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 820mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 310mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.5ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 7430 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1013UWQ-7 | DIODES INC. | Description: DIODES INC. - DMG1013UWQ-7 - Leistungs-MOSFET, p-Kanal, 20 V, 820 mA, 0.75 ohm, SOT-323, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 820mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 310mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.75ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 3249 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1013UWQ-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 820MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 820mA (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V Qualification: AEC-Q101 | auf Bestellung 2313 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1013UWQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: | auf Bestellung 27575 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1013UWQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323; ESD Version: ESD Drain current: -540mA Power dissipation: 0.31W On-state resistance: 1.5Ω Kind of package: 7 inch reel; tape Gate-source voltage: ±6V Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: SOT323 Polarisation: unipolar Drain-source voltage: -20V | auf Bestellung 2274 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013UWQ-7 | Diodes Inc | Trans MOSFET P-CH 20V 0.82A Automotive 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1013UWQ-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 820MA SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 820mA (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1013UWQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323; ESD Version: ESD Drain current: -540mA Power dissipation: 0.31W On-state resistance: 1.5Ω Kind of package: 7 inch reel; tape Gate-source voltage: ±6V Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: SOT323 Polarisation: unipolar Drain-source voltage: -20V Anzahl je Verpackung: 1 Stücke | auf Bestellung 2274 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1013UWQ-7 | DIODES INC. | Description: DIODES INC. - DMG1013UWQ-7 - Leistungs-MOSFET, p-Kanal, 20 V, 820 mA, 0.75 ohm, SOT-323, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 820mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 310mW Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 310mW Bauform - Transistor: SOT-323 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.5ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.75ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 3249 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1013UWQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.82A 3-Pin SOT-323 T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1013UWQ-7-52 | Diodes Zetex | Trans MOSFET P-CH 20V 0.82A 3-Pin SOT-323 T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1013UWQ-7-52 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT323 T&R Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 820mA (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Power Dissipation (Max): 310mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1016UDW-7 | Diodes Inc | Trans MOSFET N/P-CH 20V 1.066A/0.845A 6-Pin SOT-363 T/R | auf Bestellung 207000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1016UDW-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 1.066A/0.845A 6-Pin SOT-363 T/R | auf Bestellung 261000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016UDW-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 1.066A/0.845A 6-Pin SOT-363 T/R | auf Bestellung 2200 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016UDW-7 | auf Bestellung 55000 Stücke: Lieferzeit 18-25 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
| DMG1016UDW-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 1.066A/0.845A 6-Pin SOT-363 T/R | auf Bestellung 2200 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016UDW-7 | DIODES INC. | Description: DIODES INC. - DMG1016UDW-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 845 mA, 845 mA, 0.3 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 845mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 845mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.3ohm Verlustleistung, p-Kanal: 330mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.3ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 330mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 8849 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1016UDW-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 330mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.07A, 845mA Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 10V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active | auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1016UDW-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 1.066A/0.845A 6-Pin SOT-363 T/R | auf Bestellung 261000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016UDW-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 1.066A/0.845A 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1016UDW-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Mounting: SMD Kind of transistor: complementary pair Kind of channel: enhancement Version: ESD Type of transistor: N/P-MOSFET Case: SOT363 Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 0.85/-1.07A Power dissipation: 0.53W On-state resistance: 0.45/0.75Ω Gate-source voltage: ±6V Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke | auf Bestellung 1193 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1016UDW-7 | Diodes Incorporated | MOSFETs 20V Vdss 6V VGSS Complementary Pair | auf Bestellung 105443 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1016UDW-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 1.066A/0.845A 6-Pin SOT-363 T/R | auf Bestellung 207000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016UDW-7 | DIODES INC. | Description: DIODES INC. - DMG1016UDW-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 845 mA, 845 mA, 0.3 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 845mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 20V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 845mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.3ohm Verlustleistung, p-Kanal: 330mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.3ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 330mW Betriebstemperatur, max.: 150°C | auf Bestellung 16090 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1016UDW-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Mounting: SMD Kind of transistor: complementary pair Kind of channel: enhancement Version: ESD Type of transistor: N/P-MOSFET Case: SOT363 Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 0.85/-1.07A Power dissipation: 0.53W On-state resistance: 0.45/0.75Ω Gate-source voltage: ±6V Kind of package: 7 inch reel; tape | auf Bestellung 1193 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016UDW-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 330mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.07A, 845mA Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 10V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active | auf Bestellung 25216 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1016UDWQ-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 1.066A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 330mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.066A (Ta), 845mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 10V, 59.76pF @ 16V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 736.6nC @ 4.5V, 0.62nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5988 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1016UDWQ-7 | Diodes Inc | Trans MOSFET N/P-CH 20V 1.066A/0.845A Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1016UDWQ-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 1.066A/0.845A Automotive 6-Pin SOT-363 T/R | auf Bestellung 414000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016UDWQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V SOT363 T&R 3K | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1016UDWQ-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 1.066A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 330mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.066A (Ta), 845mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 10V, 59.76pF @ 16V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 736.6nC @ 4.5V, 0.62nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1016UDWQ-7 | Diodes Inc | Trans MOSFET N/P-CH 20V 1.066A/0.845A Automotive 6-Pin SOT-363 T/R | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1016UDWQ-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 1.066A/0.845A Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1016UDWQ-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 1.066A/0.845A Automotive 6-Pin SOT-363 T/R | auf Bestellung 414000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016V-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R | auf Bestellung 96000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016V-7 | Diodes Incorporated | MOSFETs MOSFET N-CHANNEL P-CHANNEL SOT-563 | auf Bestellung 279544 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1016V-7 | DIODES INC. | Description: DIODES INC. - DMG1016V-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 870 mA, 870 mA, 0.3 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 870mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 870mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.3ohm Verlustleistung, p-Kanal: 530mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: SOT-563 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.3ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 530mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2810 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1016V-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016V-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R | auf Bestellung 1035 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016V-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 0.87A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 975000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1016V-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R | auf Bestellung 96000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016V-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016V-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.63/-0.46A; 0.53W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 0.63/-0.46A Power dissipation: 0.53W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 0.4/0.7Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke | auf Bestellung 2463 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1016V-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R | auf Bestellung 1035 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016V-7 | DIODES INC. | Description: DIODES INC. - DMG1016V-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 870 mA, 870 mA, 0.3 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 870mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 870mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.3ohm Verlustleistung, p-Kanal: 530mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: SOT-563 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.3ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 530mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2810 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1016V-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.63/-0.46A; 0.53W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 0.63/-0.46A Power dissipation: 0.53W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 0.4/0.7Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD | auf Bestellung 2463 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016V-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016V-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016V-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 0.87A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 979116 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1016V-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016V-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R | auf Bestellung 195000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016V-7 | Diodes Inc | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1016V-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016V-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016VQ-13 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A Automotive 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1016VQ-13 | Diodes Inc | Trans MOSFET N/P-CH 20V 0.87A/0.64A Automotive 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1016VQ-13 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A Automotive 6-Pin SOT-563 T/R | auf Bestellung 70000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016VQ-13 | Diodes Incorporated | MOSFET Comp Pair Enh FET 20Vdss 6Vgss | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1016VQ-13 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 0.87A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 90000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1016VQ-13-52 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT563 T&R Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 870mA (Ta), 640mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V, 59.76pF @ 16V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 736.6nC @ 4.5V, 0.62nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1016VQ-13-52 | Diodes Zetex | Trans MOSFET N/P-Ch | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1016VQ-7 | Diodes Inc | Trans MOSFET N/P-CH 20V 0.87A/0.64A Automotive 6-Pin SOT-563 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1016VQ-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R Automotive AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016VQ-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 0.87A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 171000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1016VQ-7 | Diodes Incorporated | MOSFETs Comp Pair Enh FET 20Vdss 6Vgss | auf Bestellung 5995 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1016VQ-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A Automotive 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1016VQ-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R Automotive AEC-Q101 | auf Bestellung 195000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016VQ-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R Automotive AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016VQ-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 0.87A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 173455 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1016VQ-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1023UV-13 | Diodes Zetex | Trans MOSFET P-CH 20V 1.03A 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1023UV-7 | Diodes Zetex | Trans MOSFET P-CH 20V 1.03A 6-Pin SOT-563 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1023UV-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.68A; 0.53W; SOT563; ESD Type of transistor: P-MOSFET x2 Mounting: SMD Case: SOT563 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.68A On-state resistance: 25Ω Power dissipation: 0.53W Gate-source voltage: ±6V Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD | auf Bestellung 857 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1023UV-7 | Diodes Zetex | Trans MOSFET P-CH 20V 1.03A 6-Pin SOT-563 T/R | auf Bestellung 1883 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1023UV-7 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 1.03A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A Input Capacitance (Ciss) (Max) @ Vds: 59.76pF @ 16V Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 741000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1023UV-7 | Diodes Zetex | Trans MOSFET P-CH 20V 1.03A 6-Pin SOT-563 T/R | auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1023UV-7 | Diodes Zetex | Trans MOSFET P-CH 20V 1.03A 6-Pin SOT-563 T/R | auf Bestellung 1883 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1023UV-7 | Diodes Inc | Trans MOSFET P-CH 20V 1.03A 6-Pin SOT-563 T/R | auf Bestellung 65999 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1023UV-7 | Diodes Zetex | Trans MOSFET P-CH 20V 1.03A 6-Pin SOT-563 T/R | auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1023UV-7 | Diodes Incorporated | MOSFETs MOSFET P-CHANNEL | auf Bestellung 10063 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1023UV-7 | Diodes Zetex | Trans MOSFET P-CH 20V 1.03A 6-Pin SOT-563 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1023UV-7 | Diodes Zetex | Trans MOSFET P-CH 20V 1.03A 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1023UV-7 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 1.03A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A Input Capacitance (Ciss) (Max) @ Vds: 59.76pF @ 16V Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 750414 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1023UV-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.68A; 0.53W; SOT563; ESD Type of transistor: P-MOSFET x2 Mounting: SMD Case: SOT563 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.68A On-state resistance: 25Ω Power dissipation: 0.53W Gate-source voltage: ±6V Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke | auf Bestellung 857 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1023UV-7-52 | Diodes Zetex | Dual P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1023UV-7-52 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT563 T&R Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 59.76pF @ 16V Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6224nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1023UVQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V-24V SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 59pF @ 16V Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.622nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 120000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1023UVQ-13 | Diodes Zetex | High Enhancement Mode MOSFET | auf Bestellung 120000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1023UVQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1023UVQ-13 | Diodes Zetex | High Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1023UVQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | auf Bestellung 4921 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1023UVQ-7 | Diodes Inc | High Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1023UVQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V-24V SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 59pF @ 16V Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.622nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 1319960 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1023UVQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V-24V SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 59pF @ 16V Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.622nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 1317000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1024UV-7 | Diodes Zetex | Trans MOSFET N-CH 20V 1.38A 6-Pin SOT-563 T/R | auf Bestellung 2665 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1024UV-7 | Diodes Zetex | Trans MOSFET N-CH 20V 1.38A 6-Pin SOT-563 T/R | auf Bestellung 69000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1024UV-7 | Diodes Zetex | Trans MOSFET N-CH 20V 1.38A 6-Pin SOT-563 T/R | auf Bestellung 69000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1024UV-7 | Diodes Zetex | Trans MOSFET N-CH 20V 1.38A 6-Pin SOT-563 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1024UV-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 1.38A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.38A Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 8470 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1024UV-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.89A; 0.53W; SOT563; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.89A Power dissipation: 0.53W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 0.45Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke | auf Bestellung 312 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1024UV-7 | Diodes Zetex | Trans MOSFET N-CH 20V 1.38A 6-Pin SOT-563 T/R | auf Bestellung 327000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1024UV-7 | Diodes Incorporated | MOSFETs MOSFET N-CHANNEL | auf Bestellung 31718 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1024UV-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.89A; 0.53W; SOT563; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.89A Power dissipation: 0.53W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 0.45Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD | auf Bestellung 312 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1024UV-7 | Diodes Zetex | Trans MOSFET N-CH 20V 1.38A 6-Pin SOT-563 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1024UV-7 | Diodes Inc | Trans MOSFET N-CH 20V 1.38A 6-Pin SOT-563 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1024UV-7 | Diodes Zetex | Trans MOSFET N-CH 20V 1.38A 6-Pin SOT-563 T/R | auf Bestellung 2665 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1024UV-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 1.38A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.38A Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1026UV-7 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.41A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 580mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 410mA Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 942000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1026UV-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.41A 6-Pin SOT-563 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1026UV-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; Idm: 1A; 0.58W; SOT563 Type of transistor: N-MOSFET x2 Mounting: SMD Case: SOT563 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A On-state resistance: 1.8Ω Power dissipation: 0.58W Pulsed drain current: 1A Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke | auf Bestellung 823 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1026UV-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60 1V-60V,SOT563,3K | auf Bestellung 122438 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1026UV-7 | DIODES INC. | Description: DIODES INC. - DMG1026UV-7 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 410 mA, 410 mA, 1.2 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 410mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 410mA Drain-Source-Durchgangswiderstand, p-Kanal: 1.2ohm Verlustleistung, p-Kanal: 580mW Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOT-563 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 1.2ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 580mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 590 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1026UV-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; Idm: 1A; 0.58W; SOT563 Type of transistor: N-MOSFET x2 Mounting: SMD Case: SOT563 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A On-state resistance: 1.8Ω Power dissipation: 0.58W Pulsed drain current: 1A Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD | auf Bestellung 823 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1026UV-7 | Diodes Inc | Trans MOSFET N-CH 60V 0.41A 6-Pin SOT-563 T/R | auf Bestellung 65003 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1026UV-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.41A 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1026UV-7 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.41A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 580mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 410mA Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 944113 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1026UV-7 | DIODES INC. | Description: DIODES INC. - DMG1026UV-7 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 410 mA, 410 mA, 1.2 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 410mA Dauer-Drainstrom Id, p-Kanal: 410mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 410mA Drain-Source-Durchgangswiderstand, p-Kanal: 1.2ohm Verlustleistung, p-Kanal: 580mW Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOT-563 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 1.2ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 580mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 590 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1026UV-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.41A 6-Pin SOT-563 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1026UV-7 | DIODES/ZETEX | Transistor 2xN-Channel MOSFET; 60V; 20V; 2,1Ohm; 440mA; 580mW; -55°C ~ 150°C; DMG1026UV-7 TDMG1026UV-7 Diodes Anzahl je Verpackung: 3000 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1026UV-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.41A 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1026UVQ-7 | Diodes Incorporated | Description: MOSFET 2 N-CH 60V 440MA SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 650mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 440mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.45pC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1026UVQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: | auf Bestellung 3069 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1026UVQ-7 | Diodes Inc | Trans MOSFET N-CH 60V 0.41A Automotive 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1029SV-7 | Diodes Zetex | Trans MOSFET N/P-CH 60V 0.5A/0.36A 6-Pin SOT-563 T/R | auf Bestellung 144000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1029SV-7 | Diodes Zetex | Trans MOSFET N/P-CH 60V 0.5A/0.36A 6-Pin SOT-563 T/R | auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1029SV-7 | Diodes Zetex | Trans MOSFET N/P-CH 60V 0.5A/0.36A 6-Pin SOT-563 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1029SV-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 60/-60V Drain current: 0.4/-0.28A Power dissipation: 0.66W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 1.7/4Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Kind of transistor: complementary pair Anzahl je Verpackung: 1 Stücke | auf Bestellung 2760 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1029SV-7 | Diodes Incorporated | MOSFETs 60V Comp Pair ENH 1.7 Ohm 10V 500mA | auf Bestellung 102984 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1029SV-7 | Diodes Incorporated | Description: MOSFET N/P-CH 60V 0.5A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA, 360mA Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 340612 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1029SV-7 | DIODES INC. | Description: DIODES INC. - DMG1029SV-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 60 V, 60 V, 500 mA, 360 mA, 1.7 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 360mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 500mA Drain-Source-Durchgangswiderstand, p-Kanal: 4ohm Verlustleistung, p-Kanal: 450mW Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOT-563 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 1.7ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 450mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 4719 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1029SV-7 | Diodes Zetex | Trans MOSFET N/P-CH 60V 0.5A/0.36A 6-Pin SOT-563 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1029SV-7 | Diodes Inc | Trans MOSFET N/P-CH 60V 0.5A/0.36A 6-Pin SOT-563 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1029SV-7 | Diodes Zetex | Trans MOSFET N/P-CH 60V 0.5A/0.36A 6-Pin SOT-563 T/R | auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1029SV-7 | Diodes Incorporated | Description: MOSFET N/P-CH 60V 0.5A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA, 360mA Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 339000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1029SV-7 | DIODES INC. | Description: DIODES INC. - DMG1029SV-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 60 V, 60 V, 500 mA, 360 mA, 1.7 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 360mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 500mA Drain-Source-Durchgangswiderstand, p-Kanal: 4ohm Verlustleistung, p-Kanal: 450mW Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOT-563 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 1.7ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 450mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 3709 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1029SV-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 60/-60V Drain current: 0.4/-0.28A Power dissipation: 0.66W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 1.7/4Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Kind of transistor: complementary pair | auf Bestellung 2760 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1029SV-7 | Diodes Zetex | Trans MOSFET N/P-CH 60V 0.5A/0.36A 6-Pin SOT-563 T/R | auf Bestellung 144000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1029SV-7-50 | Diodes Incorporated | Description: 2N7002 Family SOT563 T&R 3K Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V, 0.28nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1029SV-7-50 | Diodes Zetex | Trans MOSFET N/P-CH 60V 0.5A/0.36A 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1029SV-7-52 | Diodes Zetex | Trans MOSFET N/P-CH 60V 0.5A/0.36A 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1029SV-7-52 | Diodes Incorporated | Description: 2N7002 Family SOT563 T&R 3K Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V, 0.28nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1029SVQ-7 | Diodes Zetex | Trans MOSFET N/P-CH 60V 0.5A/0.36A Automotive 6-Pin SOT-563 T/R | auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1029SVQ-7 | Diodes Inc | Trans MOSFET N/P-CH 60V 0.5A/0.36A Automotive 6-Pin SOT-563 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1029SVQ-7 | Diodes Incorporated | Description: MOSFET N/P-CH 60V 0.5A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V, 0.28nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA Supplier Device Package: SOT-563 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1029SVQ-7 | Diodes Zetex | Trans MOSFET N/P-CH 60V 0.5A/0.36A Automotive 6-Pin SOT-563 T/R | auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1029SVQ-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 60/-60V Drain current: 0.4/-0.28A Power dissipation: 0.66W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 1.7/4Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry Version: ESD | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1029SVQ-7 | Diodes Zetex | Trans MOSFET N/P-CH 60V 0.5A/0.36A Automotive 6-Pin SOT-563 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1029SVQ-7 | Diodes Incorporated | Description: MOSFET N/P-CH 60V 0.5A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V, 0.28nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA Supplier Device Package: SOT-563 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5862 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1029SVQ-7 | Diodes Zetex | Trans MOSFET N/P-CH 60V 0.5A/0.36A Automotive 6-Pin SOT-563 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1029SVQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V~60V SOT563 T&R 3K | auf Bestellung 94836 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1029SVQ-7-52 | Diodes Incorporated | Description: MOSFET BVDSS: 41V~60V SOT563 T&R Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V, 0.28nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG1029SVQ-7-52 | Diodes Zetex | Trans MOSFET N/P-CH 60V 0.5A/0.36A Automotive 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG10600C070_03WN | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 7"; 1024x600; Illumin: LED; 16MBFLASH; RGB; 300cd/m2 Interface: 24bit RGB; CMOS/TTL; RS232; UART Kind of connector: 10pin; SD Touchpad: none Kind of display: graphical; matrix IPS Related items: HDL662B Illumination: LED Colour: RGB Kind of controller: T5L2 Type of display: TFT Operating temperature: -20...70°C Dimensions: 190.5x105.4x11.8mm Window dimensions (H x W): 154.2x85.9mm Supply voltage: 4.5...5.5V DC Screen size: 7" Luminosity: 300cd/m2 Display resolution: 1024x600 No. of colours: 16.7M Memory: 16MB FLASH Connector pinout layout: 1x10 | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG10600C070_03WN | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 7"; 1024x600; Illumin: LED; 16MBFLASH; RGB; 300cd/m2 Interface: 24bit RGB; CMOS/TTL; RS232; UART Kind of connector: 10pin; SD Touchpad: none Kind of display: graphical; matrix IPS Related items: HDL662B Illumination: LED Colour: RGB Kind of controller: T5L2 Type of display: TFT Operating temperature: -20...70°C Dimensions: 190.5x105.4x11.8mm Window dimensions (H x W): 154.2x85.9mm Supply voltage: 4.5...5.5V DC Screen size: 7" Luminosity: 300cd/m2 Display resolution: 1024x600 No. of colours: 16.7M Memory: 16MB FLASH Connector pinout layout: 1x10 Anzahl je Verpackung: 1 Stücke | auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG10600C070_03WTC | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 7"; 1024x600; Illumin: LED; 16MBFLASH; RGB; 250cd/m2 Interface: 24bit RGB; CMOS/TTL; I2C; RS232; UART Kind of connector: 10pin; SD Touchpad: capacitive Kind of display: graphical; matrix IPS Related items: HDL662B Illumination: LED Colour: RGB Kind of controller: T5L2 Type of display: TFT Operating temperature: -20...70°C Dimensions: 190.5x105.4x13.6mm Window dimensions (H x W): 154.2x85.9mm Supply voltage: 4.5...5.5V DC Screen size: 7" Luminosity: 250cd/m2 Display resolution: 1024x600 No. of colours: 16.7M Memory: 16MB FLASH Connector pinout layout: 1x10 Anzahl je Verpackung: 1 Stücke | auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG10600C070_03WTC | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 7"; 1024x600; Illumin: LED; 16MBFLASH; RGB; 250cd/m2 Interface: 24bit RGB; CMOS/TTL; I2C; RS232; UART Kind of connector: 10pin; SD Touchpad: capacitive Kind of display: graphical; matrix IPS Related items: HDL662B Illumination: LED Colour: RGB Kind of controller: T5L2 Type of display: TFT Operating temperature: -20...70°C Dimensions: 190.5x105.4x13.6mm Window dimensions (H x W): 154.2x85.9mm Supply voltage: 4.5...5.5V DC Screen size: 7" Luminosity: 250cd/m2 Display resolution: 1024x600 No. of colours: 16.7M Memory: 16MB FLASH Connector pinout layout: 1x10 | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG10600C070_03WTR | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 7"; 1024x600; Illumin: LED; 16MBFLASH; RGB; 250cd/m2 Operating temperature: -20...70°C Touchpad: resistance Colour: RGB Related items: HDL662B Type of display: TFT Illumination: LED Kind of controller: T5L2 Dimensions: 190.5x105.4x13.3mm Window dimensions (H x W): 154.2x85.9mm Supply voltage: 4.5...5.5V DC Screen size: 7" Luminosity: 250cd/m2 Display resolution: 1024x600 No. of colours: 16.7M Memory: 16MB FLASH Connector pinout layout: 1x10 Kind of display: graphical; matrix IPS Kind of connector: 10pin; SD Interface: 24bit RGB; CMOS/TTL; RS232; UART Anzahl je Verpackung: 1 Stücke | auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG10600C070_03WTR | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 7"; 1024x600; Illumin: LED; 16MBFLASH; RGB; 250cd/m2 Operating temperature: -20...70°C Touchpad: resistance Colour: RGB Related items: HDL662B Type of display: TFT Illumination: LED Kind of controller: T5L2 Dimensions: 190.5x105.4x13.3mm Window dimensions (H x W): 154.2x85.9mm Supply voltage: 4.5...5.5V DC Screen size: 7" Luminosity: 250cd/m2 Display resolution: 1024x600 No. of colours: 16.7M Memory: 16MB FLASH Connector pinout layout: 1x10 Kind of display: graphical; matrix IPS Kind of connector: 10pin; SD Interface: 24bit RGB; CMOS/TTL; RS232; UART | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG10600C101_03WN | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 10.1"; 1024x600; Illumin: LED; 16MBFLASH; RGB; 8pin,SD Operating temperature: -10...60°C Touchpad: none Colour: RGB Related items: HDL65011; HDL65013 Type of display: TFT Illumination: LED Kind of controller: T5L2 Dimensions: 257.8x148.1x13.6mm Window dimensions (H x W): 222.7x125.3mm Supply voltage: 6...15V DC Screen size: 10.1" Luminosity: 250cd/m2 Display resolution: 1024x600 No. of colours: 16.7M Memory: 16MB FLASH Connector pinout layout: 1x8 Kind of display: graphical; matrix IPS Kind of connector: 8pin; SD Interface: 24bit RGB; CMOS/TTL; RS232; UART Anzahl je Verpackung: 1 Stücke | auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG10600C101_03WN | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 10.1"; 1024x600; Illumin: LED; 16MBFLASH; RGB; 8pin,SD Operating temperature: -10...60°C Touchpad: none Colour: RGB Related items: HDL65011; HDL65013 Type of display: TFT Illumination: LED Kind of controller: T5L2 Dimensions: 257.8x148.1x13.6mm Window dimensions (H x W): 222.7x125.3mm Supply voltage: 6...15V DC Screen size: 10.1" Luminosity: 250cd/m2 Display resolution: 1024x600 No. of colours: 16.7M Memory: 16MB FLASH Connector pinout layout: 1x8 Kind of display: graphical; matrix IPS Kind of connector: 8pin; SD Interface: 24bit RGB; CMOS/TTL; RS232; UART | auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG10600C101_03WTC | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 10.1"; 1024x600; Illumin: LED; 16MBFLASH; RGB; 8pin,SD Operating temperature: -10...60°C Touchpad: capacitive Colour: RGB Related items: HDL65011; HDL65013 Type of display: TFT Illumination: LED Kind of controller: T5L2 Dimensions: 257.8x148.1x15.2mm Window dimensions (H x W): 222.7x125.3mm Supply voltage: 6...15V DC Screen size: 10.1" Luminosity: 200cd/m2 Display resolution: 1024x600 No. of colours: 16.7M Memory: 16MB FLASH Connector pinout layout: 1x8 Kind of display: graphical; matrix IPS Kind of connector: 8pin; SD Interface: 24bit RGB; CMOS/TTL; I2C; RS232; UART Anzahl je Verpackung: 1 Stücke | auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG10600C101_03WTC | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 10.1"; 1024x600; Illumin: LED; 16MBFLASH; RGB; 8pin,SD Operating temperature: -10...60°C Touchpad: capacitive Colour: RGB Related items: HDL65011; HDL65013 Type of display: TFT Illumination: LED Kind of controller: T5L2 Dimensions: 257.8x148.1x15.2mm Window dimensions (H x W): 222.7x125.3mm Supply voltage: 6...15V DC Screen size: 10.1" Luminosity: 200cd/m2 Display resolution: 1024x600 No. of colours: 16.7M Memory: 16MB FLASH Connector pinout layout: 1x8 Kind of display: graphical; matrix IPS Kind of connector: 8pin; SD Interface: 24bit RGB; CMOS/TTL; I2C; RS232; UART | auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG10600C101_03WTR | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 10.1"; 1024x600; Illumin: LED; 16MBFLASH; RGB; 8pin,SD Operating temperature: -10...60°C Touchpad: resistance Colour: RGB Related items: HDL65011; HDL65013 Type of display: TFT Illumination: LED Kind of controller: T5L2 Dimensions: 257.8x148.1x15.1mm Window dimensions (H x W): 222.7x125.3mm Supply voltage: 6...15V DC Screen size: 10.1" Luminosity: 150cd/m2 Display resolution: 1024x600 No. of colours: 16.7M Memory: 16MB FLASH Connector pinout layout: 1x8 Kind of display: graphical; matrix IPS Kind of connector: 8pin; SD Interface: 24bit RGB; CMOS/TTL; RS232; UART | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG10600C101_03WTR | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 10.1"; 1024x600; Illumin: LED; 16MBFLASH; RGB; 8pin,SD Operating temperature: -10...60°C Touchpad: resistance Colour: RGB Related items: HDL65011; HDL65013 Type of display: TFT Illumination: LED Kind of controller: T5L2 Dimensions: 257.8x148.1x15.1mm Window dimensions (H x W): 222.7x125.3mm Supply voltage: 6...15V DC Screen size: 10.1" Luminosity: 150cd/m2 Display resolution: 1024x600 No. of colours: 16.7M Memory: 16MB FLASH Connector pinout layout: 1x8 Kind of display: graphical; matrix IPS Kind of connector: 8pin; SD Interface: 24bit RGB; CMOS/TTL; RS232; UART Anzahl je Verpackung: 1 Stücke | auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG10600F070_02WN | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 7"; 1024x600; Illumin: LED; 16MBFLASH; RGB; 300cd/m2 Operating temperature: -10...60°C Touchpad: none Colour: RGB Related items: HDL662S Type of display: TFT Illumination: LED Kind of controller: T5L2 Dimensions: 165x100x3.5mm Window dimensions (H x W): 154.2x85.9mm Supply voltage: 4.5...5.5V DC Screen size: 7" Luminosity: 300cd/m2 Display resolution: 1024x600 No. of colours: 16.7M Memory: 16MB FLASH Connector pinout layout: 1x50 Kind of display: graphical; matrix IPS Kind of connector: 50pin Interface: 24bit RGB; CAN; SD; TTL; UART Anzahl je Verpackung: 1 Stücke | auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG10600F070_02WN | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 7"; 1024x600; Illumin: LED; 16MBFLASH; RGB; 300cd/m2 Operating temperature: -10...60°C Touchpad: none Colour: RGB Related items: HDL662S Type of display: TFT Illumination: LED Kind of controller: T5L2 Dimensions: 165x100x3.5mm Window dimensions (H x W): 154.2x85.9mm Supply voltage: 4.5...5.5V DC Screen size: 7" Luminosity: 300cd/m2 Display resolution: 1024x600 No. of colours: 16.7M Memory: 16MB FLASH Connector pinout layout: 1x50 Kind of display: graphical; matrix IPS Kind of connector: 50pin Interface: 24bit RGB; CAN; SD; TTL; UART | auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG10600F070_02WTC | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 7"; 1024x600; Illumin: LED; 16MBFLASH; RGB; 250cd/m2 Operating temperature: -10...60°C Touchpad: capacitive Colour: RGB Related items: HDL662S Type of display: TFT Illumination: LED Kind of controller: T5L2 Dimensions: 178.79x112.39x5.6mm Window dimensions (H x W): 154.2x85.9mm Supply voltage: 4.5...5.5V DC Screen size: 7" Luminosity: 250cd/m2 Display resolution: 1024x600 No. of colours: 16.7M Memory: 16MB FLASH Connector pinout layout: 1x50 Kind of display: graphical; matrix IPS Kind of connector: 50pin Interface: 24bit RGB; CAN; SD; TTL; UART Anzahl je Verpackung: 1 Stücke | auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG10600F070_02WTC | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 7"; 1024x600; Illumin: LED; 16MBFLASH; RGB; 250cd/m2 Operating temperature: -10...60°C Touchpad: capacitive Colour: RGB Related items: HDL662S Type of display: TFT Illumination: LED Kind of controller: T5L2 Dimensions: 178.79x112.39x5.6mm Window dimensions (H x W): 154.2x85.9mm Supply voltage: 4.5...5.5V DC Screen size: 7" Luminosity: 250cd/m2 Display resolution: 1024x600 No. of colours: 16.7M Memory: 16MB FLASH Connector pinout layout: 1x50 Kind of display: graphical; matrix IPS Kind of connector: 50pin Interface: 24bit RGB; CAN; SD; TTL; UART | auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG10600F070_02WTR | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 7"; 1024x600; Illumin: LED; 16MBFLASH; RGB; 200cd/m2 Operating temperature: -10...60°C Touchpad: resistance Colour: RGB Related items: HDL662S Type of display: TFT Illumination: LED Kind of controller: T5L2 Dimensions: 165x100x5mm Window dimensions (H x W): 154.2x85.9mm Supply voltage: 4.5...5.5V DC Screen size: 7" Luminosity: 200cd/m2 Display resolution: 1024x600 No. of colours: 16.7M Memory: 16MB FLASH Connector pinout layout: 1x50 Kind of display: graphical; matrix IPS Kind of connector: 50pin Interface: 24bit RGB; CAN; SD; TTL; UART Anzahl je Verpackung: 1 Stücke | auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG10600F070_02WTR | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 7"; 1024x600; Illumin: LED; 16MBFLASH; RGB; 200cd/m2 Operating temperature: -10...60°C Touchpad: resistance Colour: RGB Related items: HDL662S Type of display: TFT Illumination: LED Kind of controller: T5L2 Dimensions: 165x100x5mm Window dimensions (H x W): 154.2x85.9mm Supply voltage: 4.5...5.5V DC Screen size: 7" Luminosity: 200cd/m2 Display resolution: 1024x600 No. of colours: 16.7M Memory: 16MB FLASH Connector pinout layout: 1x50 Kind of display: graphical; matrix IPS Kind of connector: 50pin Interface: 24bit RGB; CAN; SD; TTL; UART | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG10600F101_01WN | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 10.1"; 1024x600; Illumin: LED; 16MBFLASH; RGB; 50pin Operating temperature: -10...60°C Touchpad: none Colour: RGB Related items: HDL662S Type of display: TFT Illumination: LED Kind of controller: T5L2 Dimensions: 235x143x4.4mm Window dimensions (H x W): 222.7x125.3mm Supply voltage: 4.5...5.5V DC Screen size: 10.1" Luminosity: 250cd/m2 Display resolution: 1024x600 No. of colours: 16.7M Memory: 16MB FLASH Connector pinout layout: 1x50 Kind of display: graphical; matrix IPS Kind of connector: 50pin Interface: 24bit RGB; CAN; SD; TTL; UART Anzahl je Verpackung: 1 Stücke | auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG10600F101_01WN | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 10.1"; 1024x600; Illumin: LED; 16MBFLASH; RGB; 50pin Operating temperature: -10...60°C Touchpad: none Colour: RGB Related items: HDL662S Type of display: TFT Illumination: LED Kind of controller: T5L2 Dimensions: 235x143x4.4mm Window dimensions (H x W): 222.7x125.3mm Supply voltage: 4.5...5.5V DC Screen size: 10.1" Luminosity: 250cd/m2 Display resolution: 1024x600 No. of colours: 16.7M Memory: 16MB FLASH Connector pinout layout: 1x50 Kind of display: graphical; matrix IPS Kind of connector: 50pin Interface: 24bit RGB; CAN; SD; TTL; UART | auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG10600F101_01WTC | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 10.1"; 1024x600; Illumin: LED; 16MBFLASH; RGB; 50pin Operating temperature: -10...60°C Touchpad: capacitive Colour: RGB Related items: HDL662S Type of display: TFT Illumination: LED Kind of controller: T5L2 Dimensions: 235x143x5.9mm Window dimensions (H x W): 222.7x125.3mm Supply voltage: 4.5...5.5V DC Screen size: 10.1" Luminosity: 200cd/m2 Display resolution: 1024x600 No. of colours: 16.7M Memory: 16MB FLASH Connector pinout layout: 1x50 Kind of display: graphical; matrix IPS Kind of connector: 50pin Interface: 24bit RGB; CAN; SD; TTL; UART | auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG10600F101_01WTC | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 10.1"; 1024x600; Illumin: LED; 16MBFLASH; RGB; 50pin Operating temperature: -10...60°C Touchpad: capacitive Colour: RGB Related items: HDL662S Type of display: TFT Illumination: LED Kind of controller: T5L2 Dimensions: 235x143x5.9mm Window dimensions (H x W): 222.7x125.3mm Supply voltage: 4.5...5.5V DC Screen size: 10.1" Luminosity: 200cd/m2 Display resolution: 1024x600 No. of colours: 16.7M Memory: 16MB FLASH Connector pinout layout: 1x50 Kind of display: graphical; matrix IPS Kind of connector: 50pin Interface: 24bit RGB; CAN; SD; TTL; UART Anzahl je Verpackung: 1 Stücke | auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG10600F101_01WTR | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 10.1"; 1024x600; Illumin: LED; 16MBFLASH; RGB; 50pin Operating temperature: -10...60°C Touchpad: resistance Colour: RGB Related items: HDL662S Type of display: TFT Illumination: LED Kind of controller: T5L2 Dimensions: 248.76x153x6.18mm Window dimensions (H x W): 222.7x125.3mm Supply voltage: 4.5...5.5V DC Screen size: 10.1" Luminosity: 150cd/m2 Display resolution: 1024x600 No. of colours: 16.7M Memory: 16MB FLASH Connector pinout layout: 1x50 Kind of display: graphical; matrix IPS Kind of connector: 50pin Interface: 24bit RGB; CAN; SD; TTL; UART Anzahl je Verpackung: 1 Stücke | auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG10600F101_01WTR | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 10.1"; 1024x600; Illumin: LED; 16MBFLASH; RGB; 50pin Operating temperature: -10...60°C Touchpad: resistance Colour: RGB Related items: HDL662S Type of display: TFT Illumination: LED Kind of controller: T5L2 Dimensions: 248.76x153x6.18mm Window dimensions (H x W): 222.7x125.3mm Supply voltage: 4.5...5.5V DC Screen size: 10.1" Luminosity: 150cd/m2 Display resolution: 1024x600 No. of colours: 16.7M Memory: 16MB FLASH Connector pinout layout: 1x50 Kind of display: graphical; matrix IPS Kind of connector: 50pin Interface: 24bit RGB; CAN; SD; TTL; UART | auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG10600T070_09WN | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 7"; 1024x600; Illumin: LED; 32MBFLASH; RGB; 700cd/m2 Interface: 24bit RGB; CMOS/TTL; RS232; UART Kind of connector: 8pin; SD Touchpad: none Kind of display: graphical; matrix IPS Related items: HDL65011; HDL65013 Illumination: LED Colour: RGB Kind of controller: T5L2 Type of display: TFT Operating temperature: -20...70°C Dimensions: 190.5x105.4x11.6mm Window dimensions (H x W): 154.2x85.9mm Supply voltage: 9...36V DC Screen size: 7" Luminosity: 700cd/m2 Display resolution: 1024x600 No. of colours: 16.7M Memory: 32MB FLASH Connector pinout layout: 1x8 Anzahl je Verpackung: 1 Stücke | auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG10600T070_09WN | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 7"; 1024x600; Illumin: LED; 32MBFLASH; RGB; 700cd/m2 Interface: 24bit RGB; CMOS/TTL; RS232; UART Kind of connector: 8pin; SD Touchpad: none Kind of display: graphical; matrix IPS Related items: HDL65011; HDL65013 Illumination: LED Colour: RGB Kind of controller: T5L2 Type of display: TFT Operating temperature: -20...70°C Dimensions: 190.5x105.4x11.6mm Window dimensions (H x W): 154.2x85.9mm Supply voltage: 9...36V DC Screen size: 7" Luminosity: 700cd/m2 Display resolution: 1024x600 No. of colours: 16.7M Memory: 32MB FLASH Connector pinout layout: 1x8 | auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG10600T070_09WTC | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 7"; 1024x600; Illumin: LED; 32MBFLASH; RGB; 650cd/m2 Interface: 24bit RGB; CMOS/TTL; I2C; RS232; UART Kind of connector: 8pin; SD Touchpad: capacitive Kind of display: graphical; matrix IPS Related items: HDL65011; HDL65013 Illumination: LED Colour: RGB Kind of controller: T5L2 Type of display: TFT Operating temperature: -20...70°C Dimensions: 190.5x105.4x13.4mm Window dimensions (H x W): 154.2x85.9mm Supply voltage: 9...36V DC Screen size: 7" Luminosity: 650cd/m2 Display resolution: 1024x600 No. of colours: 16.7M Memory: 32MB FLASH Connector pinout layout: 1x8 Anzahl je Verpackung: 1 Stücke | auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG10600T070_09WTC | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 7"; 1024x600; Illumin: LED; 32MBFLASH; RGB; 650cd/m2 Interface: 24bit RGB; CMOS/TTL; I2C; RS232; UART Kind of connector: 8pin; SD Touchpad: capacitive Kind of display: graphical; matrix IPS Related items: HDL65011; HDL65013 Illumination: LED Colour: RGB Kind of controller: T5L2 Type of display: TFT Operating temperature: -20...70°C Dimensions: 190.5x105.4x13.4mm Window dimensions (H x W): 154.2x85.9mm Supply voltage: 9...36V DC Screen size: 7" Luminosity: 650cd/m2 Display resolution: 1024x600 No. of colours: 16.7M Memory: 32MB FLASH Connector pinout layout: 1x8 | auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG10600T070_09WTR | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 7"; 1024x600; Illumin: LED; 32MBFLASH; RGB; 600cd/m2 Interface: 24bit RGB; CMOS/TTL; RS232; UART Kind of connector: 8pin; SD Touchpad: resistance Kind of display: graphical; matrix IPS Related items: HDL65011; HDL65013 Illumination: LED Colour: RGB Kind of controller: T5L2 Type of display: TFT Operating temperature: -20...70°C Dimensions: 190.5x105.4x13.2mm Window dimensions (H x W): 154.2x85.9mm Supply voltage: 9...36V DC Screen size: 7" Luminosity: 600cd/m2 Display resolution: 1024x600 No. of colours: 16.7M Memory: 32MB FLASH Connector pinout layout: 1x8 Anzahl je Verpackung: 1 Stücke | auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG10600T070_09WTR | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 7"; 1024x600; Illumin: LED; 32MBFLASH; RGB; 600cd/m2 Interface: 24bit RGB; CMOS/TTL; RS232; UART Kind of connector: 8pin; SD Touchpad: resistance Kind of display: graphical; matrix IPS Related items: HDL65011; HDL65013 Illumination: LED Colour: RGB Kind of controller: T5L2 Type of display: TFT Operating temperature: -20...70°C Dimensions: 190.5x105.4x13.2mm Window dimensions (H x W): 154.2x85.9mm Supply voltage: 9...36V DC Screen size: 7" Luminosity: 600cd/m2 Display resolution: 1024x600 No. of colours: 16.7M Memory: 32MB FLASH Connector pinout layout: 1x8 | auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG10N60SCT | Diodes Incorporated | Description: MOSFET N-CH 600V 12A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB (Type TH) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1587 pF @ 16 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG10N60SCT | DIODES INCORPORATED | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 15A; 71W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.9A Power dissipation: 71W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 35nC Pulsed drain current: 15A | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG10N60SCT | Diodes Zetex | N-CHANNEL ENHANCEMENT MODE MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG10N60SCT | Diodes Inc | Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG12800C070_03WN | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 7"; 1280x800; Illumin: LED; 16MBFLASH; RGB; 300cd/m2 Interface: 24bit RGB; CMOS/TTL; MIPI; RS232; UART Kind of connector: 8pin; SD Touchpad: none Kind of display: graphical; matrix IPS Related items: HDL65011; HDL65013 Illumination: LED Colour: RGB Kind of controller: T5L2 Type of display: TFT Operating temperature: -10...50°C Dimensions: 189.96x115x12.4mm Window dimensions (H x W): 150.72x94.2mm Supply voltage: 6...36V DC Screen size: 7" Luminosity: 300cd/m2 Display resolution: 1280x800 No. of colours: 16.7M Memory: 16MB FLASH Connector pinout layout: 1x8 | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG12800C070_03WN | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 7"; 1280x800; Illumin: LED; 16MBFLASH; RGB; 300cd/m2 Interface: 24bit RGB; CMOS/TTL; MIPI; RS232; UART Kind of connector: 8pin; SD Touchpad: none Kind of display: graphical; matrix IPS Related items: HDL65011; HDL65013 Illumination: LED Colour: RGB Kind of controller: T5L2 Type of display: TFT Operating temperature: -10...50°C Dimensions: 189.96x115x12.4mm Window dimensions (H x W): 150.72x94.2mm Supply voltage: 6...36V DC Screen size: 7" Luminosity: 300cd/m2 Display resolution: 1280x800 No. of colours: 16.7M Memory: 16MB FLASH Connector pinout layout: 1x8 Anzahl je Verpackung: 1 Stücke | auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG12800C070_03WTC | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 7"; 1280x800; Illumin: LED; 16MBFLASH; RGB; 300cd/m2 Supply voltage: 6...36V DC; 6...36V DC Dimensions: 189.96x115x14.2mm; 189.96x115x14.2mm Interface: 24bit RGB; CMOS/TTL; I2C; MIPI; RS232; UART; 24bit RGB; CMOS/TTL; I2C; MIPI; RS232; UART Kind of connector: 8pin; SD; 8pin; SD Operating temperature: -10...50°C; -10...50°C Kind of display: graphical; matrix IPS; graphical; matrix IPS Related items: HDL65011; HDL65013; HDL65011; HDL65013 Illumination: LED; LED Colour: RGB; RGB Kind of controller: T5L2; T5L2 Type of display: TFT; TFT Window dimensions (H x W): 150.72x94.2mm; 150.72x94.2mm Screen size: 7"; 7" Luminosity: 300cd/m2; 300cd/m2 Display resolution: 1280x800; 1280x800 Memory: 16MB FLASH; 16MB FLASH No. of colours: 16.7M; 16.7M Connector pinout layout: 1x8; 1x8 Touchpad: capacitive; capacitive | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG12800C070_03WTC | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 7"; 1280x800; Illumin: LED; 16MBFLASH; RGB; 300cd/m2 Supply voltage: 6...36V DC; 6...36V DC Dimensions: 189.96x115x14.2mm; 189.96x115x14.2mm Interface: 24bit RGB; CMOS/TTL; I2C; MIPI; RS232; UART; 24bit RGB; CMOS/TTL; I2C; MIPI; RS232; UART Kind of connector: 8pin; SD; 8pin; SD Operating temperature: -10...50°C; -10...50°C Kind of display: graphical; matrix IPS; graphical; matrix IPS Related items: HDL65011; HDL65013; HDL65011; HDL65013 Illumination: LED; LED Colour: RGB; RGB Kind of controller: T5L2; T5L2 Type of display: TFT; TFT Window dimensions (H x W): 150.72x94.2mm; 150.72x94.2mm Screen size: 7"; 7" Luminosity: 300cd/m2; 300cd/m2 Display resolution: 1280x800; 1280x800 Memory: 16MB FLASH; 16MB FLASH No. of colours: 16.7M; 16.7M Connector pinout layout: 1x8; 1x8 Touchpad: capacitive; capacitive Anzahl je Verpackung: 1 Stücke | auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG12800C070_03WTR | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 7"; 1280x800; Illumin: LED; 16MBFLASH; RGB; 250cd/m2 Related items: HDL65011; HDL65013 Touchpad: resistance Kind of display: graphical; matrix IPS Illumination: LED Colour: RGB Kind of controller: T5L2 Type of display: TFT Connector pinout layout: 1x8 Operating temperature: -10...50°C Dimensions: 189.96x115x13.9mm Window dimensions (H x W): 150.72x94.2mm Screen size: 7" Supply voltage: 6...36V DC Luminosity: 250cd/m2 Display resolution: 1280x800 Memory: 16MB FLASH No. of colours: 16.7M Kind of connector: 8pin; SD Interface: 24bit RGB; CMOS/TTL; MIPI; RS232; UART Anzahl je Verpackung: 1 Stücke | auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG12800C070_03WTR | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 7"; 1280x800; Illumin: LED; 16MBFLASH; RGB; 250cd/m2 Related items: HDL65011; HDL65013 Touchpad: resistance Kind of display: graphical; matrix IPS Illumination: LED Colour: RGB Kind of controller: T5L2 Type of display: TFT Connector pinout layout: 1x8 Operating temperature: -10...50°C Dimensions: 189.96x115x13.9mm Window dimensions (H x W): 150.72x94.2mm Screen size: 7" Supply voltage: 6...36V DC Luminosity: 250cd/m2 Display resolution: 1280x800 Memory: 16MB FLASH No. of colours: 16.7M Kind of connector: 8pin; SD Interface: 24bit RGB; CMOS/TTL; MIPI; RS232; UART | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG12800T070_01WN | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 7"; 1280x800; Illumin: LED; 32MBFLASH; RGB; 300cd/m2 Supply voltage: 9...36V DC Interface: 24bit RGB; CMOS/TTL; LVDS; RS232; UART Dimensions: 186.94x112.14x14mm Colour: RGB Kind of controller: T5L2 Type of display: TFT Operating temperature: -20...70°C Window dimensions (H x W): 149.76x93.6mm Screen size: 7" Luminosity: 300cd/m2 Display resolution: 1280x800 No. of colours: 16.7M Memory: 32MB FLASH Connector pinout layout: 1x8 Kind of connector: 8pin; SD Touchpad: none Kind of display: graphical; matrix IPS Related items: HDL65011; HDL65013 Illumination: LED | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG12800T070_01WN | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 7"; 1280x800; Illumin: LED; 32MBFLASH; RGB; 300cd/m2 Supply voltage: 9...36V DC Interface: 24bit RGB; CMOS/TTL; LVDS; RS232; UART Dimensions: 186.94x112.14x14mm Colour: RGB Kind of controller: T5L2 Type of display: TFT Operating temperature: -20...70°C Window dimensions (H x W): 149.76x93.6mm Screen size: 7" Luminosity: 300cd/m2 Display resolution: 1280x800 No. of colours: 16.7M Memory: 32MB FLASH Connector pinout layout: 1x8 Kind of connector: 8pin; SD Touchpad: none Kind of display: graphical; matrix IPS Related items: HDL65011; HDL65013 Illumination: LED Anzahl je Verpackung: 1 Stücke | auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG12800T070_01WTC | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 7"; 1280x800; Illumin: LED; 32MBFLASH; RGB; 250cd/m2 Related items: HDL65011; HDL65013 Touchpad: capacitive Kind of display: graphical; matrix IPS Illumination: LED Colour: RGB Kind of controller: T5L2 Type of display: TFT Connector pinout layout: 1x8 Operating temperature: -20...70°C Dimensions: 186.94x112.14x15.8mm Window dimensions (H x W): 149.76x93.6mm Screen size: 7" Supply voltage: 9...36V DC Luminosity: 250cd/m2 Display resolution: 1280x800 Memory: 32MB FLASH No. of colours: 16.7M Kind of connector: 8pin; SD Interface: 24bit RGB; CMOS/TTL; I2C; LVDS; RS232; UART Anzahl je Verpackung: 1 Stücke | auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG12800T070_01WTC | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 7"; 1280x800; Illumin: LED; 32MBFLASH; RGB; 250cd/m2 Related items: HDL65011; HDL65013 Touchpad: capacitive Kind of display: graphical; matrix IPS Illumination: LED Colour: RGB Kind of controller: T5L2 Type of display: TFT Connector pinout layout: 1x8 Operating temperature: -20...70°C Dimensions: 186.94x112.14x15.8mm Window dimensions (H x W): 149.76x93.6mm Screen size: 7" Supply voltage: 9...36V DC Luminosity: 250cd/m2 Display resolution: 1280x800 Memory: 32MB FLASH No. of colours: 16.7M Kind of connector: 8pin; SD Interface: 24bit RGB; CMOS/TTL; I2C; LVDS; RS232; UART | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG12800T070_01WTR | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 7"; 1280x800; Illumin: LED; 32MBFLASH; RGB; 200cd/m2 Supply voltage: 9...36V DC Interface: 24bit RGB; CMOS/TTL; LVDS; RS232; UART Dimensions: 186.94x112.14x15.5mm Colour: RGB Kind of controller: T5L2 Type of display: TFT Operating temperature: -20...70°C Window dimensions (H x W): 149.76x93.6mm Screen size: 7" Luminosity: 200cd/m2 Display resolution: 1280x800 No. of colours: 16.7M Memory: 32MB FLASH Connector pinout layout: 1x8 Kind of connector: 8pin; SD Touchpad: none Kind of display: graphical; matrix IPS Related items: HDL65011; HDL65013 Illumination: LED | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG12800T070_01WTR | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 7"; 1280x800; Illumin: LED; 32MBFLASH; RGB; 200cd/m2 Supply voltage: 9...36V DC Interface: 24bit RGB; CMOS/TTL; LVDS; RS232; UART Dimensions: 186.94x112.14x15.5mm Colour: RGB Kind of controller: T5L2 Type of display: TFT Operating temperature: -20...70°C Window dimensions (H x W): 149.76x93.6mm Screen size: 7" Luminosity: 200cd/m2 Display resolution: 1280x800 No. of colours: 16.7M Memory: 32MB FLASH Connector pinout layout: 1x8 Kind of connector: 8pin; SD Touchpad: none Kind of display: graphical; matrix IPS Related items: HDL65011; HDL65013 Illumination: LED Anzahl je Verpackung: 1 Stücke | auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1553-5 | iNRCORE, LLC | Description: TRANSFORMER PBC Packaging: Tube Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG16 Servo-Motor mit Metall Reduzierer Produktcode: 39985
zu Favoriten hinzufügen
Lieblingsprodukt
| HEXTRONIX | Modulare Elemente > Motoren Beschreibung: Servo-Motor mit Metall Reduzierer. • Gewicht: 18,8 g; Typ: Servo- | Produkt ist nicht verfügbar |
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| DMG201020R | Panasonic Electronic Components | Description: TRANS NPN PNP 50V MINI5-G3-B Packaging: Tape & Reel (TR) Voltage - Rated: 50V Package / Case: SC-74A, SOT-753 Current Rating (Amps): 500mA Mounting Type: Surface Mount Transistor Type: NPN + PNP (Emitter Coupled) Applications: General Amplification Supplier Device Package: Mini5-G3-B | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG201020R | Panasonic | Bipolar Transistors - BJT Composite Transistor | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG204010R | Panasonic | Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | auf Bestellung 9319 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG204010R | PANASONIC | SOT26/SOT363 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG204010R | Panasonic Electronic Components | Description: TRANS NPN/PNP 50V 0.1A MINI6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V Frequency - Transition: 150MHz Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG204020R | Panasonic Electronic Components | Description: TRANS NPN/PNP 50V 0.5A MINI6-G4 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V Frequency - Transition: 160MHz, 130MHz Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG204020R | Panasonic | Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | auf Bestellung 1570 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG204A00R | Panasonic | Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG204A00R | Panasonic Electronic Components | Description: TRANS NPN/PNP 20V/10V 0.5A MINI6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 20V, 10V Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA / 300mV @ 8mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V / 130 @ 500mA, 2V Frequency - Transition: 150MHZ, 250MHz Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG204B00R | Panasonic Electronic Components | Description: TRANS NPN/PNP 50V/10V MINI6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 10V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 300mV @ 8mA, 400mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V / 130 @ 500mA, 2V Frequency - Transition: 150MHZ, 250MHz Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG204B00R | Panasonic | Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG204B10R | Panasonic Electronic Components | Description: TRANS NPN/PNP 20V/50V MINI6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 500mA, 100mA Voltage - Collector Emitter Breakdown (Max): 20V, 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA / 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V / 210 @ 2mA, 10V Frequency - Transition: 150MHz Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG204B10R | Panasonic | Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | auf Bestellung 524 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG214010R | Panasonic | Bipolar Transistors - Pre-Biased COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG214010R | Panasonic Electronic Components | Description: TRANS PNP PREBIAS/NPN 0.3W MINI6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 PNP Pre-Biased, 1 NPN Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 500nA, 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V / 210 @ 2mA, 10V Frequency - Transition: 150MHz Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2301L | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2301L-13 | Diodes Zetex | Trans MOSFET P-CH 20V 3A 3-Pin SOT-23 T/R | auf Bestellung 290000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301L-13 | Diodes Zetex | Trans MOSFET P-CH 20V 3A 3-Pin SOT-23 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301L-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS | auf Bestellung 10066 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2301L-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 3A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 10 V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2301L-13 | Diodes Inc | P-CHANNEL ENHANCEMENT MODE MOSFET | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2301L-13 | Diodes Zetex | Trans MOSFET P-CH 20V 3A 3-Pin SOT-23 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301L-13 | Diodes Zetex | Trans MOSFET P-CH 20V 3A 3-Pin SOT-23 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301L-13 | Diodes Zetex | Trans MOSFET P-CH 20V 3A 3-Pin SOT-23 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301L-13 | Diodes Zetex | Trans MOSFET P-CH 20V 3A 3-Pin SOT-23 T/R | auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301L-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 3A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 10 V | auf Bestellung 14987 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2301L-7 | DIODES/ZETEX | Single P-Channel 20 V 1.5 W 5.5 nC Silicon Surface Mount Mosfet DMG2301L-7 TDMG2301L Anzahl je Verpackung: 100 Stücke | auf Bestellung 6000 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG2301L-7 | Diodes Zetex | Trans MOSFET P-CH 20V 3A 3-Pin SOT-23 T/R | auf Bestellung 120000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301L-7 | DIODES INC. | Description: DIODES INC. - DMG2301L-7 - Leistungs-MOSFET, p-Kanal, 20 V, 3 A, 0.12 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 1.5W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.12ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 19029 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2301L-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 3A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 10 V | auf Bestellung 79150 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2301L-7 | DIODES/ZETEX | Single P-Channel 20 V 1.5 W 5.5 nC Silicon Surface Mount Mosfet DMG2301L-7 TDMG2301L Anzahl je Verpackung: 100 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG2301L-7 | Diodes Zetex | Trans MOSFET P-CH 20V 3A 3-Pin SOT-23 T/R | auf Bestellung 57000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301L-7 | Diodes Zetex | Trans MOSFET P-CH 20V 3A 3-Pin SOT-23 T/R | auf Bestellung 101 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2301L-7 Produktcode: 207975
zu Favoriten hinzufügen
Lieblingsprodukt
| Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
| DMG2301L-7 | Diodes Zetex | Trans MOSFET P-CH 20V 3A 3-Pin SOT-23 T/R | auf Bestellung 105000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301L-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 3A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 10 V | auf Bestellung 78000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2301L-7 | DIODES/ZETEX | Single P-Channel 20 V 1.5 W 5.5 nC Silicon Surface Mount Mosfet DMG2301L-7 TDMG2301L Anzahl je Verpackung: 100 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG2301L-7 | Diodes Zetex | Trans MOSFET P-CH 20V 3A 3-Pin SOT-23 T/R | auf Bestellung 105000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301L-7 | DIODES INC. | Description: DIODES INC. - DMG2301L-7 - Leistungs-MOSFET, p-Kanal, 20 V, 3 A, 0.12 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Verlustleistung Pd: 1.5W Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 1.5W Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.12ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.12ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 19029 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2301L-7 | DIODES/ZETEX | Single P-Channel 20 V 1.5 W 5.5 nC Silicon Surface Mount Mosfet DMG2301L-7 TDMG2301L Anzahl je Verpackung: 100 Stücke | auf Bestellung 11700 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG2301L-7 | Diodes Zetex | Trans MOSFET P-CH 20V 3A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2301L-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS | auf Bestellung 27987 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2301L-7 | Diodes Inc | P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2301L-7-ML | MOSLEADER | Description: P 20V 3A SOT23 Packaging: Tape & Reel (TR) | auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2301LK | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2301LK-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | auf Bestellung 9785 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2301LK-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 2.4A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 1A, 4.5V Power Dissipation (Max): 840mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 6 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2301LK-13 | Diodes Inc | Trans MOSFET P-CH 20V 2.4A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2301LK-13 | Diodes Zetex | Trans MOSFET P-CH 20V 2.4A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2301LK-7 | Diodes Inc | Trans MOSFET P-CH 20V 2.4A 3-Pin SOT-23 T/R | auf Bestellung 57000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2301LK-7 | Diodes Zetex | Trans MOSFET P-CH 20V 2.4A 3-Pin SOT-23 T/R | auf Bestellung 59530 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301LK-7 | DIODES INC. | Description: DIODES INC. - DMG2301LK-7 - Leistungs-MOSFET, p-Kanal, 20 V, 2.4 A, 0.136 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 600mV euEccn: NLR Verlustleistung: 840mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.136ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 4580 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2301LK-7 | Diodes Zetex | Trans MOSFET P-CH 20V 2.4A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301LK-7 | DIODES/ZETEX | Trans MOSFET P-CH 20V 2.4A Automotive 3-Pin SOT-23 DMG2301LK-7 TDMG2301LK Anzahl je Verpackung: 100 Stücke | auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG2301LK-7 | Diodes Zetex | Trans MOSFET P-CH 20V 2.4A 3-Pin SOT-23 T/R | auf Bestellung 921 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2301LK-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 2.4A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 1A, 4.5V Power Dissipation (Max): 840mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 6 V Qualification: AEC-Q101 | auf Bestellung 32906 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2301LK-7 | Diodes Zetex | Trans MOSFET P-CH 20V 2.4A 3-Pin SOT-23 T/R | auf Bestellung 921 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2301LK-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | auf Bestellung 23714 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2301LK-7 | Diodes Zetex | Trans MOSFET P-CH 20V 2.4A 3-Pin SOT-23 T/R | auf Bestellung 59530 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301LK-7 | DIODES INC. | Description: DIODES INC. - DMG2301LK-7 - Leistungs-MOSFET, p-Kanal, 20 V, 2.4 A, 0.136 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 840mW Gate-Source-Schwellenspannung, max.: 600mV euEccn: NLR Verlustleistung: 840mW Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.136ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.136ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 4580 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2301LK-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 2.4A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 1A, 4.5V Power Dissipation (Max): 840mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 6 V Qualification: AEC-Q101 | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2301LK-7 | Diodes Zetex | Trans MOSFET P-CH 20V 2.4A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301LK-7 | Diodes Zetex | Trans MOSFET P-CH 20V 2.4A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2301U | Diodes Incorporated | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2301U-7 | DIODES INC. | Description: DIODES INC. - DMG2301U-7 - Leistungs-MOSFET, p-Kanal, 20 V, 2.7 A, 0.08 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 800mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.08ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2301U-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 2.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 6 V | auf Bestellung 183000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2301U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 2.7A 3-Pin SOT-23 T/R | auf Bestellung 75000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301U-7 | DIODES INC. | Description: DIODES INC. - DMG2301U-7 - Leistungs-MOSFET, p-Kanal, 20 V, 2.7 A, 0.08 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 800mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.08ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2301U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 2.7A 3-Pin SOT-23 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301U-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 2.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 6 V | auf Bestellung 185459 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2301U-7 | Diodes Inc | Trans MOSFET P-CH 20V 2.7A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2301U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 2.7A 3-Pin SOT-23 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301U-7 | Diodes Incorporated | MOSFETs MOSFET P-CHANNEL SOT-23 | auf Bestellung 14631 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2302U | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2302U-7 | Diodes Incorporated | MOSFETs ENHANCE MODE MOSFET 20V N-Chan | auf Bestellung 13660 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2302U-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 4.2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 50µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V | auf Bestellung 269441 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2302U-7 | Diodes Inc | Trans MOSFET N-CH 20V 4.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2302U-7 | Diodes Zetex | Trans MOSFET N-CH 20V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 189000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2302U-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 4.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 50µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V | auf Bestellung 267000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2302UK | Diodes Incorporated | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2302UK-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 2.8A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 2158 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2302UK-13 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2302UK-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.2A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.12Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate charge: 1.4nC Pulsed drain current: 12A | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2302UK-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | auf Bestellung 4598 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2302UK-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 2.8A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2302UK-13 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2302UK-13 | Diodes Inc | Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2302UK-13 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2302UK-13 Produktcode: 198291
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Lieblingsprodukt
| Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| DMG2302UK-7 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2302UK-7 | DIODES/ZETEX | Transistor N-MOSFET; 20V; 12V; 120mOhm; 2,8A; 660mW; -55°C ~ 150°C; DMG2302UK-7, DMG2302UK-13; DMG2302UK Diodes TDMG2302uk Anzahl je Verpackung: 100 Stücke | auf Bestellung 70 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG2302UK-7 | DIODES INC. | Description: DIODES INC. - DMG2302UK-7 - Leistungs-MOSFET, n-Kanal, 20 V, 2.8 A, 0.09 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Verlustleistung Pd: 660mW Gate-Source-Schwellenspannung, max.: 600mV euEccn: NLR Verlustleistung: 660mW Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.061ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.09ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 9238 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2302UK-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 2.8A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 73651 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2302UK-7 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R | auf Bestellung 84000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2302UK-7 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R | auf Bestellung 776 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2302UK-7 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2302UK-7 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R | auf Bestellung 84000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2302UK-7 | Diodes Inc | Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2302UK-7 | DIODES/ZETEX | Transistor N-MOSFET; 20V; 12V; 120mOhm; 2,8A; 660mW; -55°C ~ 150°C; DMG2302UK-7, DMG2302UK-13; DMG2302UK Diodes TDMG2302uk | auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2302UK-7 | DIODES INC. | Description: DIODES INC. - DMG2302UK-7 - Leistungs-MOSFET, n-Kanal, 20 V, 2.8 A, 0.09 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 600mV euEccn: NLR Verlustleistung: 660mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.09ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 9238 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2302UK-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 2.8A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 72000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2302UK-7 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2302UK-7 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2302UK-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 0.66W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.2A Pulsed drain current: 12A Power dissipation: 0.66W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 90mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD | auf Bestellung 949 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2302UK-7 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2302UK-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | auf Bestellung 530429 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2302UK-7 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R | auf Bestellung 776 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2302UK-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 0.66W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.2A Pulsed drain current: 12A Power dissipation: 0.66W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 90mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke | auf Bestellung 949 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG2302UKQ-13 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2302UKQ-13 | Diodes Inc | MOSFET BVDSS: 8V24V SOT23 T&R 10K | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2302UKQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.2A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.12Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate charge: 1.4nC Application: automotive industry Pulsed drain current: 12A | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2302UKQ-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 2.8A SOT23 T&R 1 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 9059 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2302UKQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | auf Bestellung 2528 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2302UKQ-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 2.8A SOT23 T&R 1 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2302UKQ-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 2.8A SOT23 T&R 3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 39000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2302UKQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | auf Bestellung 93027 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2302UKQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 48282 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2302UKQ-7 | DIODES INC. | Description: DIODES INC. - DMG2302UKQ-7 - Leistungs-MOSFET, n-Kanal, 20 V, 2.8 A, 0.09 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 600mV euEccn: NLR Verlustleistung: 660mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: DMG2302UKQ productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.09ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2030 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2302UKQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2302UKQ-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 2.8A SOT23 T&R 3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 40094 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2302UKQ-7 | Diodes Inc | Trans MOSFET N-CH 20V 2.8A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2302UKQ-7 | DIODES INC. | Description: DIODES INC. - DMG2302UKQ-7 - Leistungs-MOSFET, n-Kanal, 20 V, 2.8 A, 0.09 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Verlustleistung Pd: 660mW Gate-Source-Schwellenspannung, max.: 600mV euEccn: NLR Verlustleistung: 660mW Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3Pin(s) Produktpalette: DMG2302UKQ productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.061ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.09ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2030 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2302UKQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 48282 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2302UKQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.2A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.12Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 1.4nC Application: automotive industry Pulsed drain current: 12A | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2302UQ-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 4.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 50µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2302UQ-13 | Diodes Zetex | N-Channel Enhancement Mode Mosfet Automotive AEC-Q101 | auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2302UQ-13 | Diodes Incorporated | MOSFETs N-Ch Enh Mode FET 20Vdss 8Vgss 27A | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2302UQ-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 4.2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 50µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 8744 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2302UQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 4.2A 3-Pin SOT-23 T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2302UQ-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 4.2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 50µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 1854 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2302UQ-7 | Diodes Incorporated | MOSFETs N-Ch Enh Mode FET 20Vdss 8Vgss 27A | auf Bestellung 2989 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2302UQ-7 | Diodes Inc | N-Channel Enhancement Mode Mosfet | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2302UQ-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 4.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 50µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2302UQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.8A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 45mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 4.3nC Application: automotive industry Pulsed drain current: 25A | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2305UX | Diodes Incorporated | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2305UX-13 | DIODES INC. | Description: DIODES INC. - DMG2305UX-13 - Leistungs-MOSFET, p-Kanal, 20 V, 4.2 A, 0.052 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 900mV euEccn: NLR Verlustleistung: 1.4W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.052ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 173916 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2305UX-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; Idm: -15A; 1.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.3A Pulsed drain current: -15A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.2Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2305UX-13 | Diodes Zetex | Automotive-grade P-channel SOT-23 MOSFET with a maximum drain-source voltage of -20 V, continuous drain current of -4.2 A, and a maximum thermal dissipation of 1.4 W. | auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2305UX-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.2A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 15 V | auf Bestellung 67242 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2305UX-13 | Diodes Zetex | Automotive-grade P-channel SOT-23 MOSFET with a maximum drain-source voltage of -20 V, continuous drain current of -4.2 A, and a maximum thermal dissipation of 1.4 W. | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2305UX-13 | Diodes Incorporated | MOSFETs P-Ch ENH FET -20V 52mOhm -5.0V | auf Bestellung 87055 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2305UX-13 Produktcode: 181611
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Lieblingsprodukt
| Transistoren > Transistoren P-Kanal-Feld | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| DMG2305UX-13 | DIODES INC. | Description: DIODES INC. - DMG2305UX-13 - Leistungs-MOSFET, p-Kanal, 20 V, 4.2 A, 0.052 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 900mV euEccn: NLR Verlustleistung: 1.4W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.052ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 173916 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2305UX-13 | Diodes Zetex | Automotive-grade P-channel SOT-23 MOSFET with a maximum drain-source voltage of -20 V, continuous drain current of -4.2 A, and a maximum thermal dissipation of 1.4 W. | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2305UX-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.2A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 15 V | auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2305UX-13 | Diodes Zetex | Automotive-grade P-channel SOT-23 MOSFET with a maximum drain-source voltage of -20 V, continuous drain current of -4.2 A, and a maximum thermal dissipation of 1.4 W. | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2305UX-13 | Diodes Inc./Zetex | Trans MOSFET P-CH 20V 4.2A Automotive 3-Pin SOT-23 T/R | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2305UX-13 | Diodes Zetex | Automotive-grade P-channel SOT-23 MOSFET with a maximum drain-source voltage of -20 V, continuous drain current of -4.2 A, and a maximum thermal dissipation of 1.4 W. | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2305UX-13 | Diodes Inc | Trans MOSFET P-CH 20V 4.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2305UX-13 | Diodes Zetex | Automotive-grade P-channel SOT-23 MOSFET with a maximum drain-source voltage of -20 V, continuous drain current of -4.2 A, and a maximum thermal dissipation of 1.4 W. | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2305UX-7 | Diodes Incorporated | MOSFETs P-Ch ENH FET -20V 52mOh -5A | auf Bestellung 738090 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2305UX-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 378000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2305UX-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2305UX-7 | DIODES INC. | Description: DIODES INC. - DMG2305UX-7 - Leistungs-MOSFET, p-Kanal, 20 V, 4.2 A, 0.052 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 900mV euEccn: NLR Verlustleistung: 1.4W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.052ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 270006 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2305UX-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 141000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2305UX-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 54 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2305UX-7 | DIODES/ZETEX | Transistor P-Channel MOSFET; 20V; 8V; 200mOhm; 4,2A; 1,4W; -55°C ~ 150°C; DMG2305UX-7, DMG2305UX-13 DMG2305UX TDMG2305ux Anzahl je Verpackung: 250 Stücke | auf Bestellung 330 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG2305UX-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.2A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 15 V | auf Bestellung 85000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2305UX-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 141000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2305UX-7 | Diodes Inc | Trans MOSFET P-CH 20V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2305UX-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2305UX-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 378000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2305UX-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; 1.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.3A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.2Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2305UX-7 | DIODES INC. | Description: DIODES INC. - DMG2305UX-7 - Leistungs-MOSFET, p-Kanal, 20 V, 4.2 A, 0.052 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 900mV euEccn: NLR Verlustleistung: 1.4W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.052ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 271071 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2305UX-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.2A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 15 V | auf Bestellung 86419 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2305UX-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 96000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2305UX-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2305UX-EV | EVVO | Description: MOSFET P-CH 20V 4.2A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 886.6 pF @ 10 V | auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2305UX-EV | EVVO | Description: MOSFET P-CH 20V 4.2A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 886.6 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2305UXQ-13 | Diodes Inc | P-CHANNEL ENHANCEMENT MODE MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2305UXQ-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.2A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2305UXQ-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -15A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 10.2nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2305UXQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2305UXQ-13 | Diodes Zetex | Trans MOSFET P-CH 20V 4.2A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2305UXQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS | auf Bestellung 79978 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2305UXQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.2A 3-Pin SOT-23 T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2305UXQ-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.2A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 6334 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2305UXQ-7 | DIODES INC. | Description: DIODES INC. - DMG2305UXQ-7 - Leistungs-MOSFET, p-Kanal, 20 V, 4.2 A, 0.04 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 900mV euEccn: NLR Verlustleistung: 1.4W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.04ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 219 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2305UXQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.2A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 348000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2305UXQ-7 | Diodes Inc | P-Channel Enhancement Mode MOSFET | auf Bestellung 474000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2305UXQ-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.2A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2305UXQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.2A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 348000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2305UXQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -15A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 10.2nC Kind of package: 7 inch reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2305UXQ-7 | DIODES INC. | Description: DIODES INC. - DMG2305UXQ-7 - Leistungs-MOSFET, p-Kanal, 20 V, 4.2 A, 0.04 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 900mV euEccn: NLR Verlustleistung: 1.4W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.04ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 219 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2307L | DIODES INC. | Description: DIODES INC. - DMG2307L - Leistungs-MOSFET, Anreicherungstyp, p-Kanal, 30 V, 4.6 A, 0.09 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 4.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 760mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.09ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 14161 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2307L | Diodes Incorporated | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| DMG2307L-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2307L-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R | auf Bestellung 123000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2307L-7 | Diodes Inc | Trans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2307L-7 | DIODES INC. | Description: DIODES INC. - DMG2307L-7 - Leistungs-MOSFET, p-Kanal, 30 V, 2.5 A, 0.09 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 760mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.09ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 4520 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2307L-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30 25V-30V,SOT23,3K | auf Bestellung 9130 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2307L-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.76W; SOT23 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: SOT23 Polarisation: unipolar Drain-source voltage: -30V Drain current: -2A On-state resistance: 0.134Ω Power dissipation: 0.76W Gate-source voltage: ±20V Kind of package: 7 inch reel; tape | auf Bestellung 2805 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2307L-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 2.5A SOT-23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V Power Dissipation (Max): 760mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V | auf Bestellung 674279 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2307L-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2307L-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R | auf Bestellung 123000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2307L-7 | DIODES INC. | Description: DIODES INC. - DMG2307L-7 - Leistungs-MOSFET, p-Kanal, 30 V, 2.5 A, 0.09 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 760mW Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 760mW Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.07ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.09ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 4520 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2307L-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.76W; SOT23 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: SOT23 Polarisation: unipolar Drain-source voltage: -30V Drain current: -2A On-state resistance: 0.134Ω Power dissipation: 0.76W Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke | auf Bestellung 2805 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG2307L-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 2.5A SOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V Power Dissipation (Max): 760mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V | auf Bestellung 674000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2307L-7 G24.. | DIODES/ZETEX | P-CHANNEL ENHANCEMENT MODE MOSFET 90mOhm, -30V, -3.8A DMG2307L TDMG2307l Anzahl je Verpackung: 100 Stücke | auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG2307L-7-50 | Diodes Zetex | P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2307L-7-52 | Diodes Zetex | P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2307LQ-7 | DIODES INC. | Description: DIODES INC. - DMG2307LQ-7 - Leistungs-MOSFET, p-Kanal, 30 V, 2.5 A, 0.07 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 760mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.07ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2045 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2307LQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -20A; 1.9W; SOT23 Application: automotive industry Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: SOT23 Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -20A Drain current: -3.6A Gate charge: 8.2nC On-state resistance: 0.134Ω Power dissipation: 1.9W Gate-source voltage: ±20V Kind of package: 7 inch reel; tape | auf Bestellung 1754 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2307LQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -20A; 1.9W; SOT23 Application: automotive industry Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: SOT23 Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -20A Drain current: -3.6A Gate charge: 8.2nC On-state resistance: 0.134Ω Power dissipation: 1.9W Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke | auf Bestellung 1754 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG2307LQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT23 T&R Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V Power Dissipation (Max): 760mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 69000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2307LQ-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 264 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2307LQ-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2307LQ-7 | DIODES INC. | Description: DIODES INC. - DMG2307LQ-7 - Leistungs-MOSFET, p-Kanal, 30 V, 2.5 A, 0.07 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 760mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.07ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2045 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2307LQ-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 264 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2307LQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT23 T&R Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V Power Dissipation (Max): 760mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 71575 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG2307LQ-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 174000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2307LQ-7 | Diodes Inc | Trans MOSFET P-CH 30V 3.8A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG2307LQ-7 | Diodes Incorporated | MOSFETs 30V P-Ch Enhancement Mode | auf Bestellung 1930 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG263010R | Panasonic Electronic Components | Description: TRANS NPN/PNP PREBIAS 0.3W MINI5 Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: Mini5-G3-B | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG263010R | Panasonic | Bipolar Transistors - Pre-Biased COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | auf Bestellung 2800 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG263010R | Panasonic Electronic Components | Description: TRANS NPN/PNP PREBIAS 0.3W MINI5 Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: Mini5-G3-B | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG263020R | Panasonic Electronic Components | Description: TRANS PREBIAS 1NPN 1PNP MINI5 Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: Mini5-G3-B | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG263020R | Panasonic | Bipolar Transistors - Pre-Biased COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG263020R | Panasonic Electronic Components | Description: TRANS PREBIAS 1NPN 1PNP MINI5 Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: Mini5-G3-B | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG264010R | Panasonic Electronic Components | Description: TRANS PREBIAS 1NPN 1PNP MINI6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG264010R | Panasonic Electronic Components | Description: TRANS PREBIAS 1NPN 1PNP MINI6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG264010R | Panasonic | Bipolar Transistors - Pre-Biased COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | auf Bestellung 6683 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG264020R | Panasonic | Bipolar Transistors - Pre-Biased COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | auf Bestellung 3043 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG264020R | Panasonic Electronic Components | Description: TRANS NPN/PNP PREBIAS 0.3W MINI6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG264020R | Panasonic Electronic Components | Description: TRANS NPN/PNP PREBIAS 0.3W MINI6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG264040R | Panasonic Electronic Components | Description: TRANS NPN/PNP PREBIAS 0.3W MINI6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG264040R | Panasonic Electronic Components | Description: TRANS NPN/PNP PREBIAS 0.3W MINI6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG264040R | Panasonic | Bipolar Transistors - Pre-Biased COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | auf Bestellung 3560 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG264050R | Panasonic Electronic Components | Description: TRANS NPN/PNP PREBIAS 0.3W MINI6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG264050R | Panasonic | Bipolar Transistors - Pre-Biased COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG264050R | Panasonic Electronic Components | Description: TRANS NPN/PNP PREBIAS 0.3W MINI6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG264060R | Panasonic Electronic Components | Description: TRANS NPN/PNP PREBIAS 0.3W MINI6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG264060R | Panasonic | Bipolar Transistors - Pre-Biased COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG264060R | Panasonic Electronic Components | Description: TRANS NPN/PNP PREBIAS 0.3W MINI6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG264120R | Panasonic Electronic Components | Description: TRANS NPN/PNP PREBIAS 0.3W MINI6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG264120R | Panasonic | Bipolar Transistors - Pre-Biased COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | auf Bestellung 6948 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG264H00R | Panasonic Electronic Components | Description: TRANS NPN/PNP PREBIAS 0.3W MINI6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA / 250mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA, 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 50 @ 100mA, 10V Resistor - Base (R1): 47kOhms, 4.7kOhms Resistor - Emitter Base (R2): 47kOhms, 4.7kOhms Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG264H00R | Panasonic | Bipolar Transistors - Pre-Biased COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG300 | LOVATO ELECTRIC | Category: Power Network Meters and Analyzers Description: Meter: network parameters; for DIN rail mounting; LCD; 128x80 Manufacturer series: DMG Kind of network: three-phase True effective value measurement: True RMS Illumination: yes AC current measuring range: 10mA...6A Dimensions (W x H x D): 71.6x90x63mm AC current measuring accuracy: ±0.2% AC voltage measuring accuracy: ±0.2% Active power measuring accuracy: ±0.5% AC voltage measuring range: 10...480V Frequency measuring range: 45...65Hz Display resolution: 128x80 Measurement: AC current; active power; AC voltage; apparent power; energy; frequency; power factor; reactive power Kind of meter: digital; mounting Related items: EXP1001; EXP1013; EXP1020 Measuring instrument features: FFT up to 31st harmonic; multilanguage menu Mounting: for DIN rail mounting Kind of measurement: indirect with 1A current transformer; indirect with 5A current transformer IP rating: IP20 at terminal side; IP40 (from the front) Kind of display used: LCD Type of meter: network parameters | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG301NU | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG301NU-13 | Diodes Zetex | Trans MOSFET N-CH 25V 0.26A 3-Pin SOT-23 T/R | auf Bestellung 7001 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG301NU-13 | DIODES INC. | Description: DIODES INC. - DMG301NU-13 - Leistungs-MOSFET, n-Kanal, 25 V, 260 mA, 4 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 25V rohsCompliant: YES Dauer-Drainstrom Id: 260mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 320mW Gate-Source-Schwellenspannung, max.: 1.1V euEccn: NLR Verlustleistung: 320mW Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 4ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 4ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 13766 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG301NU-13 | Diodes Zetex | Trans MOSFET N-CH 25V 0.26A 3-Pin SOT-23 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG301NU-13 | Diodes Incorporated | Description: MOSFET N-CH 25V 260MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 27.9 pF @ 10 V | auf Bestellung 378782 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG301NU-13 | Diodes Inc | Trans MOSFET N-CH 25V 0.26A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG301NU-13 | Diodes Incorporated | MOSFETs 25V N-Ch ENH FET 25Vds 8Vgs 0.32W | auf Bestellung 18085 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG301NU-13 | Diodes Zetex | Trans MOSFET N-CH 25V 0.26A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG301NU-13 | Diodes Zetex | Trans MOSFET N-CH 25V 0.26A 3-Pin SOT-23 T/R | auf Bestellung 4800 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG301NU-13 | DIODES INC. | Description: DIODES INC. - DMG301NU-13 - Leistungs-MOSFET, n-Kanal, 25 V, 260 mA, 4 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 25V rohsCompliant: YES Dauer-Drainstrom Id: 260mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.1V euEccn: NLR Verlustleistung: 320mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 4ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 13766 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG301NU-13 | DIODES INCORPORATED | DMG301NU-13 SMD N channel transistors | auf Bestellung 2960 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG301NU-13 | Diodes Zetex | Trans MOSFET N-CH 25V 0.26A 3-Pin SOT-23 T/R | auf Bestellung 4800 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG301NU-13 | Diodes Incorporated | Description: MOSFET N-CH 25V 260MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 27.9 pF @ 10 V | auf Bestellung 360000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG301NU-13 | Diodes Zetex | Trans MOSFET N-CH 25V 0.26A 3-Pin SOT-23 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG301NU-13 | Diodes Zetex | Trans MOSFET N-CH 25V 0.26A 3-Pin SOT-23 T/R | auf Bestellung 7001 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG301NU-7 | Diodes Incorporated | Description: MOSFET N-CH 25V 260MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 10 V | auf Bestellung 528000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG301NU-7 | Diodes Inc | Trans MOSFET N-CH 25V 0.26A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG301NU-7 | Diodes Incorporated | MOSFETs 25V N-Ch ENH FET 25Vds 8Vgs 0.32W | auf Bestellung 16409 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG301NU-7 | Diodes Zetex | Trans MOSFET N-CH 25V 0.26A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG301NU-7 | DIODES INCORPORATED | DMG301NU-7 SMD N channel transistors | auf Bestellung 2974 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG301NU-7 | Diodes Incorporated | Description: MOSFET N-CH 25V 260MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 10 V | auf Bestellung 528000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG301NU-7 | Diodes Zetex | Trans MOSFET N-CH 25V 0.26A 3-Pin SOT-23 T/R | auf Bestellung 528000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG302PU-13 | Diodes Incorporated | Description: MOSFET P-CH 25V 170MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 27.2 pF @ 10 V | auf Bestellung 650000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG302PU-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -25V; -140mA; Idm: -0.5A; 450mW Case: SOT23 Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -25V Pulsed drain current: -0.5A Drain current: -0.14A Gate charge: 0.35nC Power dissipation: 0.45W Gate-source voltage: ±8V On-state resistance: 13Ω | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG302PU-13 | Diodes Inc | Trans MOSFET P-CH 25V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG302PU-13 | Diodes Incorporated | MOSFETs 25V P-Ch Enh Mode FET -8Vgss 0.33W | auf Bestellung 17079 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG302PU-13 | Diodes Incorporated | Description: MOSFET P-CH 25V 170MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 27.2 pF @ 10 V | auf Bestellung 652737 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG302PU-7 | Diodes Inc | Trans MOSFET P-CH 25V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG302PU-7 | Diodes Incorporated | MOSFETs 25V P-Ch Enh FET 27.2pF 0.35nC | auf Bestellung 3960 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG302PU-7 | Diodes Incorporated | Description: MOSFET P-CH 25V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V Power Dissipation (Max): 330mW Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 27.2 pF @ 10 V | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG302PU-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -25V; -140mA; Idm: -0.5A; 450mW Case: SOT23 Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -25V Pulsed drain current: -0.5A Drain current: -0.14A Gate charge: 0.35nC Power dissipation: 0.45W Gate-source voltage: ±8V On-state resistance: 13Ω | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG302PU-7 | Diodes Incorporated | Description: MOSFET P-CH 25V 170MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V Power Dissipation (Max): 330mW Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 27.2 pF @ 10 V | auf Bestellung 12166 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG32240F028_02WN | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 2.8"; 240x320; Illumin: LED; 8MBFLASH; RGB; 350cd/m2 Kind of connector: 50pin Operating temperature: -10...60°C Kind of display: graphical; matrix TN Illumination: LED Touchpad: none Kind of controller: T5L0 Type of display: TFT Window dimensions (H x W): 43.2x57.6mm Dimensions: 50.2x69.3x2.15mm Screen size: 2.8" Supply voltage: 3.6...5.5V DC Display resolution: 240x320 Luminosity: 350cd/m2 No. of colours: 262k Connector pinout layout: 1x50 Memory: 8MB FLASH Interface: 18bit RGB; CAN; SD; TTL; UART Related items: HDL662S Colour: RGB | auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG32240F028_02WN | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 2.8"; 240x320; Illumin: LED; 8MBFLASH; RGB; 350cd/m2 Kind of connector: 50pin Operating temperature: -10...60°C Kind of display: graphical; matrix TN Illumination: LED Touchpad: none Kind of controller: T5L0 Type of display: TFT Window dimensions (H x W): 43.2x57.6mm Dimensions: 50.2x69.3x2.15mm Screen size: 2.8" Supply voltage: 3.6...5.5V DC Display resolution: 240x320 Luminosity: 350cd/m2 No. of colours: 262k Connector pinout layout: 1x50 Memory: 8MB FLASH Interface: 18bit RGB; CAN; SD; TTL; UART Related items: HDL662S Colour: RGB Anzahl je Verpackung: 1 Stücke | auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG32240F028_02WTR | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 2.8"; 240x320; Illumin: LED; 8MBFLASH; RGB; 300cd/m2 Kind of connector: 50pin Operating temperature: -10...60°C Kind of display: graphical; matrix TN Illumination: LED Touchpad: resistance Kind of controller: T5L0 Type of display: TFT Window dimensions (H x W): 43.2x57.6mm Dimensions: 50.2x69.3x3.75mm Screen size: 2.8" Supply voltage: 3.6...5.5V DC Display resolution: 240x320 Luminosity: 300cd/m2 No. of colours: 262k Connector pinout layout: 1x50 Memory: 8MB FLASH Interface: 18bit RGB; CAN; SD; TTL; UART Related items: HDL662S Colour: RGB | auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG32240F028_02WTR | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 2.8"; 240x320; Illumin: LED; 8MBFLASH; RGB; 300cd/m2 Kind of connector: 50pin Operating temperature: -10...60°C Kind of display: graphical; matrix TN Illumination: LED Touchpad: resistance Kind of controller: T5L0 Type of display: TFT Window dimensions (H x W): 43.2x57.6mm Dimensions: 50.2x69.3x3.75mm Screen size: 2.8" Supply voltage: 3.6...5.5V DC Display resolution: 240x320 Luminosity: 300cd/m2 No. of colours: 262k Connector pinout layout: 1x50 Memory: 8MB FLASH Interface: 18bit RGB; CAN; SD; TTL; UART Related items: HDL662S Colour: RGB Anzahl je Verpackung: 1 Stücke | auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG3401LSN-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3A 3-Pin SC-59 T/R | auf Bestellung 189000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3401LSN-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 3A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SC-59-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1326 pF @ 15 V | auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3401LSN-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3A 3-Pin SC-59 T/R | auf Bestellung 189000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3401LSN-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3A 3-Pin SC-59 T/R | auf Bestellung 1240 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3401LSN-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3A 3-Pin SC-59 T/R | auf Bestellung 1240 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3401LSN-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 3A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SC-59-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1326 pF @ 15 V | auf Bestellung 27648 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3401LSN-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59 Mounting: SMD Case: SC59 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -30A Drain-source voltage: -30V Drain current: -2.9A Gate charge: 25.1nC On-state resistance: 85mΩ Power dissipation: 1.2W Gate-source voltage: ±12V Kind of package: 7 inch reel; tape | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3401LSN-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3A 3-Pin SC-59 T/R | auf Bestellung 552000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3401LSN-7 | Diodes Inc | Trans MOSFET P-CH 30V 3A 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3401LSN-7 | Diodes Incorporated | MOSFETs 30V P-CH MOSFET | auf Bestellung 6649 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3401LSN-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3A 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3401LSNQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V 30V SC59 T&R 10K | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3401LSNQ-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 3A SC59-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Power Dissipation (Max): 800mW Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SC-59-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1326 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3401LSNQ-13 | Diodes Zetex | P-Channel Enhancement Mode MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3401LSNQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V 30V SC59 T&R 3K | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3401LSNQ-7 | Diodes Zetex | MOSFET 31V to 40V SC59 3K Automotive AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3401LSNQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59 Mounting: SMD Case: SC59 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -30A Drain-source voltage: -30V Drain current: -2.9A Gate charge: 25.1nC On-state resistance: 85mΩ Power dissipation: 1.2W Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3401LSNQ-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 3A SC59-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Power Dissipation (Max): 800mW Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SC-59-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1326 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 2901000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3401LSNQ-7 | Diodes Inc | MOSFET BVDSS, 31V to 40V SC59 3K | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3401LSNQ-7 | Diodes Zetex | MOSFET 31V to 40V SC59 3K Automotive AEC-Q101 | auf Bestellung 1002000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3401LSNQ-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 3A SC59-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Power Dissipation (Max): 800mW Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SC-59-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1326 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2903818 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3402L | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3402L-7 | Diodes Inc | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3402L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 275 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3402L-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23 Polarisation: unipolar Case: SOT23 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET On-state resistance: 85mΩ Power dissipation: 1.4W Drain current: 4A Gate-source voltage: ±12V Drain-source voltage: 30V Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke | auf Bestellung 366 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG3402L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V | auf Bestellung 729000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3402L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 180000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3402L-7 | Diodes Incorporated | MOSFETs FET BVDSS 25V 30V N-Ch 305pF 8.2nC | auf Bestellung 87414 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3402L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 300000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3402L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 891000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3402L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 300000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3402L-7 | DIODES INC. | Description: DIODES INC. - DMG3402L-7 - Leistungs-MOSFET, n-Kanal, 30 V, 4 A, 0.052 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 1.4W Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 1.4W Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.052ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.052ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 472 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3402L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V | auf Bestellung 730419 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3402L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 273000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3402L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 275 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3402L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 180000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3402L-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23 Polarisation: unipolar Case: SOT23 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET On-state resistance: 85mΩ Power dissipation: 1.4W Drain current: 4A Gate-source voltage: ±12V Drain-source voltage: 30V Kind of package: 7 inch reel; tape | auf Bestellung 366 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3402L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 273000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3402L-7 | DIODES INC. | Description: DIODES INC. - DMG3402L-7 - Leistungs-MOSFET, n-Kanal, 30 V, 4 A, 0.052 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 1.4W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.052ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 472 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3402L-7 N32. | DIODES/ZETEX | Trans MOSFET N-CH 30V 4A Automotive 3-Pin SOT-23 T/R DMG3402L-7 TDMG3402L-7 Diodes Anzahl je Verpackung: 500 Stücke | auf Bestellung 2390 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG3402LQ-13 | Diodes Zetex | Trans MOSFET N-CH 30V 4A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3402LQ-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 9220 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3402LQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Gate charge: 11.7nC On-state resistance: 85mΩ Power dissipation: 1.4W Gate-source voltage: ±12V Kind of package: 13 inch reel; tape Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3402LQ-13 | Diodes Inc | Trans MOSFET N-CH 30V 4A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3402LQ-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3402LQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | auf Bestellung 13188 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3402LQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Gate charge: 11.7nC On-state resistance: 85mΩ Power dissipation: 1.4W Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3402LQ-7 | DIODES INC. | Description: DIODES INC. - DMG3402LQ-7 - Leistungs-MOSFET, n-Kanal, 30 V, 4 A, 0.052 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 1.4W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.052ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 3305 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3402LQ-7 | Diodes Inc | Trans MOSFET N-CH 30V 4A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3402LQ-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3402LQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | auf Bestellung 309 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3402LQ-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5897 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3402LQ-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 2314 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3402LQ-7 | DIODES INC. | Description: DIODES INC. - DMG3402LQ-7 - Leistungs-MOSFET, n-Kanal, 30 V, 4 A, 0.052 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 1.4W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.052ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 3305 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3402LQ-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 2314 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3402LQ-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3404L | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3404L-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 4.2A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V Power Dissipation (Max): 780mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V | auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3404L-13 | Diodes Zetex | Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3404L-13 | Diodes Incorporated | MOSFETs 30V N-Ch Enh Mode 20Vgs 641pF 13.2nC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3404L-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 30A; 1.33W; SOT23 Mounting: SMD Case: SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 30A Drain-source voltage: 30V Drain current: 4.9A Gate charge: 13.2nC On-state resistance: 35mΩ Power dissipation: 1.33W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3404L-13 | Diodes Inc | Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3404L-13 | Diodes Zetex | Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3404L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3404L-7 | Diodes Incorporated | MOSFETs 30V N-Ch Enh Mode 20Vgs 641pF 13.2nC | auf Bestellung 8190 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3404L-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.8A; 1.33W; SOT23 Mounting: SMD Case: SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.8A On-state resistance: 35mΩ Power dissipation: 1.33W Gate-source voltage: ±20V Kind of package: 7 inch reel; tape | auf Bestellung 313 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3404L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 4.2A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V Power Dissipation (Max): 780mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V | auf Bestellung 1691090 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3404L-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.8A; 1.33W; SOT23 Mounting: SMD Case: SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.8A On-state resistance: 35mΩ Power dissipation: 1.33W Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke | auf Bestellung 313 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG3404L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3404L-7 | Diodes Inc | Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3404L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 255000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3404L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3404L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 4.2A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V Power Dissipation (Max): 780mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V | auf Bestellung 1689000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3404L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3404L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3404L-7-ML | MOSLEADER | Description: N 30V 5.8A SOT23 Packaging: Tape & Reel (TR) | auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3406L | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3406L-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 3.6A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V Power Dissipation (Max): 770mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 15 V | auf Bestellung 31030 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3406L-13 | Diodes Zetex | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | auf Bestellung 10235 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3406L-13 | Diodes Zetex | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3406L-13 | Diodes Incorporated | MOSFETs 30V N-Ch Enh Mode 50mOhm 10V 3.6A | auf Bestellung 147414 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3406L-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 3.6A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V Power Dissipation (Max): 770mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 15 V | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3406L-13 | Diodes Zetex | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | auf Bestellung 10235 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3406L-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.8A On-state resistance: 70mΩ Power dissipation: 1.4W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3406L-13 | Diodes Inc | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3406L-7 | Diodes Incorporated | MOSFETs 30V N-Ch Enh Mode 50mOhm 10V 3.6A | auf Bestellung 10426 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3406L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | auf Bestellung 84000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3406L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | auf Bestellung 2296 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3406L-7 | DIODES INC. | Description: DIODES INC. - DMG3406L-7 - Leistungs-MOSFET, n-Kanal, 30 V, 3.6 A, 0.025 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 3.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 770mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: DMG3406L productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.025ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2360 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3406L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 3.6A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V Power Dissipation (Max): 770mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 15 V | auf Bestellung 51388 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3406L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | auf Bestellung 84000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3406L-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.8A On-state resistance: 70mΩ Power dissipation: 1.4W Gate-source voltage: ±20V Kind of package: 7 inch reel; tape | auf Bestellung 2876 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3406L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | auf Bestellung 768000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3406L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | auf Bestellung 141000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3406L-7 | Diodes Inc | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3406L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 3.6A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V Power Dissipation (Max): 770mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 15 V | auf Bestellung 51000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3406L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | auf Bestellung 141000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3406L-7 | DIODES INC. | Description: DIODES INC. - DMG3406L-7 - Leistungs-MOSFET, n-Kanal, 30 V, 3.6 A, 0.025 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 3.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Verlustleistung Pd: 770mW Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 770mW Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: DMG3406L productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.025ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.025ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2360 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3406L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | auf Bestellung 768000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3406L-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.8A On-state resistance: 70mΩ Power dissipation: 1.4W Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke | auf Bestellung 2876 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG3406L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | auf Bestellung 2296 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3406L-7-ML | MOSLEADER | Description: N 30V 3.6A SOT23 Packaging: Tape & Reel (TR) | auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3407SSN-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -30A; 1.1W; SC59 Mounting: SMD Case: SC59 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -30A Drain-source voltage: -30V Drain current: -3.6A Gate charge: 16nC On-state resistance: 72mΩ Power dissipation: 1.1W Gate-source voltage: ±20V Kind of package: 7 inch reel; tape | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3407SSN-7 | Diodes Zetex | Trans MOSFET P-CH 30V 4A 3-Pin SC-59 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3407SSN-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 4A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4.1A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SC-59-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V | auf Bestellung 2409 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3407SSN-7 | Diodes Inc | Trans MOSFET P-CH 30V 4A 3-Pin SC-59 T/R | auf Bestellung 20921 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3407SSN-7 | Diodes Zetex | Trans MOSFET P-CH 30V 4A 3-Pin SC-59 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3407SSN-7 | Diodes Zetex | Trans MOSFET P-CH 30V 4A 3-Pin SC-59 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3407SSN-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 4A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4.1A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SC-59-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3407SSN-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS | auf Bestellung 5173 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3407SSN-7 | Diodes Zetex | Trans MOSFET P-CH 30V 4A 3-Pin SC-59 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3407SSN-7 | Diodes Zetex | Trans MOSFET P-CH 30V 4A 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3413L-7 | DIODES INC. | Description: DIODES INC. - DMG3413L-7 - Leistungs-MOSFET, p-Kanal, 20 V, 3 A, 0.073 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 550mV euEccn: NLR Verlustleistung: 700mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.073ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 3090 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3413L-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS | auf Bestellung 3174 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3413L-7 | Diodes Zetex | Trans MOSFET P-CH 20V 3A 3-Pin SOT-23 T/R | auf Bestellung 723000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3413L-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 3A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 857 pF @ 10 V | auf Bestellung 725961 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3413L-7 | Diodes Zetex | Trans MOSFET P-CH 20V 3A 3-Pin SOT-23 T/R | auf Bestellung 705000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3413L-7 | DIODES INC. | Description: DIODES INC. - DMG3413L-7 - Leistungs-MOSFET, p-Kanal, 20 V, 3 A, 0.073 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 550mV euEccn: NLR Verlustleistung: 700mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.073ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 3090 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3413L-7 | Diodes Zetex | Trans MOSFET P-CH 20V 3A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3413L-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 3A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 857 pF @ 10 V | auf Bestellung 723000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3413L-7 | Diodes Inc | Trans MOSFET P-CH 20V 3A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3413L-7 | Diodes Zetex | Trans MOSFET P-CH 20V 3A 3-Pin SOT-23 T/R | auf Bestellung 717000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3414U | DIODES INC. | Description: DIODES INC. - DMG3414U - Leistungs-MOSFET, Anreicherungstyp, n-Kanal, 20 V, 4.2 A, 0.025 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 500mV euEccn: NLR Verlustleistung: 780mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.025ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 914 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3414U | DIODES/ZETEX | N-MOSFET 20V 4.2A 25mΩ 780mW DMG3414U Diodes TDMG3414u Anzahl je Verpackung: 100 Stücke | auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG3414U | DIODES INC. | Description: DIODES INC. - DMG3414U - Leistungs-MOSFET, Anreicherungstyp, n-Kanal, 20 V, 4.2 A, 0.025 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 500mV euEccn: NLR Verlustleistung: 780mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.025ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 914 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3414U | Diodes Incorporated | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3414U-7 | Diodes Zetex | Trans MOSFET N-CH 20V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 627 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3414U-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 0.78W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.2A Power dissipation: 0.78W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 37mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke | auf Bestellung 1935 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG3414U-7 Produktcode: 197913
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Lieblingsprodukt
| Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| DMG3414U-7 | Diodes Zetex | Trans MOSFET N-CH 20V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 627 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3414U-7 | Diodes Inc | Trans MOSFET N-CH 20V 4.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3414U-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 4.2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V Power Dissipation (Max): 780mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V | auf Bestellung 91812 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3414U-7 | Diodes Zetex | Trans MOSFET N-CH 20V 4.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3414U-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 0.78W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.2A Power dissipation: 0.78W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 37mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement | auf Bestellung 1935 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3414U-7 | Diodes Incorporated | MOSFETs N-Ch 20V VDSS 8 Vgss 30A IDM | auf Bestellung 12180 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3414U-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 4.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V Power Dissipation (Max): 780mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V | auf Bestellung 90000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3414UQ-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 4.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V Power Dissipation (Max): 780mW Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3414UQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 780mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.2A Pulsed drain current: 30A Power dissipation: 0.78W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 37mΩ Mounting: SMD Gate charge: 9.6nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3414UQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3414UQ-13 | Diodes Zetex | Trans MOSFET N-CH 20V 4.2A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3414UQ-13 | Diodes Inc | Trans MOSFET N-CH 20V 4.2A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3414UQ-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 4.2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V Power Dissipation (Max): 780mW Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3414UQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 4.2A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3414UQ-7 | DIODES INC. | Description: DIODES INC. - DMG3414UQ-7 - Leistungs-MOSFET, n-Kanal, 20 V, 4.2 A, 0.019 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 900mV euEccn: NLR Verlustleistung: 780mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.019ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2310 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3414UQ-7 | Diodes Inc | Trans MOSFET N-CH 20V 4.2A Automotive 3-Pin SOT-23 T/R | auf Bestellung 51000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3414UQ-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 4.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V Power Dissipation (Max): 780mW Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3414UQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 780mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.2A Pulsed drain current: 30A Power dissipation: 0.78W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 37mΩ Mounting: SMD Gate charge: 9.6nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3414UQ-7 | DIODES INC. | Description: DIODES INC. - DMG3414UQ-7 - Leistungs-MOSFET, n-Kanal, 20 V, 4.2 A, 0.019 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 900mV euEccn: NLR Verlustleistung: 780mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.019ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2310 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3414UQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3415U | Diodes Incorporated | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3415U-13 | Diodes Incorporated | Description: MOSFET P-CH DFN-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 42.5mOhm @ 4A, 4.5V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 10 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3415U-7 | Diodes Incorporated | MOSFETs P-CHANNEL ENHANCEMENT MODE | auf Bestellung 10632 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3415U-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 4A, 4.5V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 10 V | auf Bestellung 1330510 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3415U-7 | Diodes Inc | Trans MOSFET P-CH 20V 4A 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3415U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4A 3-Pin SOT-23 T/R | auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3415U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4A 3-Pin SOT-23 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3415U-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 0.9W; SOT23; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.5A Power dissipation: 0.9W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 71mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3415U-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 4A, 4.5V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 10 V | auf Bestellung 1329000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3415U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4A 3-Pin SOT-23 T/R | auf Bestellung 129000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3415U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4A 3-Pin SOT-23 T/R | auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3415U-7 | DIODES/ZETEX | P-MOSFET 20V 4A 39mΩ 900mW DMG3415U Diodes TDMG3415u Anzahl je Verpackung: 100 Stücke | auf Bestellung 2750 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG3415U-7 Produktcode: 138016
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Lieblingsprodukt
| Transistoren > Transistoren P-Kanal-Feld | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| DMG3415U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3415U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4A 3-Pin SOT-23 T/R | auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3415U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3415UFY4-7 | Diodes Zetex | Trans MOSFET P-CH 16V 2.5A 3-Pin DFN T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3415UFY4-7 | Diodes Incorporated | MOSFET MOSFET P-CHAN. | auf Bestellung 5763 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3415UFY4-7 | Diodes Incorporated | Description: MOSFET P-CH 16V 2.5A DFN2015H4-3 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 4A, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN2015H4-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 16 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 281.9 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3415UFY4-7 | Diodes Inc | Trans MOSFET P-CH 16V 2.5A 3-Pin DFN T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3415UFY4Q | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3415UFY4Q-7 | DIODES INC. | Description: DIODES INC. - DMG3415UFY4Q-7 - Leistungs-MOSFET, p-Kanal, 16 V, 2.5 A, 0.031 ohm, X2-DFN2015, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 16V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 550mV euEccn: NLR Verlustleistung: 650mW Bauform - Transistor: X2-DFN2015 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.031ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 410 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3415UFY4Q-7 | Diodes Zetex | Trans MOSFET P-CH 16V 2.5A Automotive AEC-Q101 3-Pin X2-DFN T/R | auf Bestellung 402000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3415UFY4Q-7 | Diodes Incorporated | Description: MOSFET P-CH 16V 2.5A X2-DFN2015 Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 4A, 4.5V Power Dissipation (Max): 650mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN2015-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 16 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 282 pF @ 10 V | auf Bestellung 39000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3415UFY4Q-7 | Diodes Zetex | Trans MOSFET P-CH 16V 2.5A Automotive AEC-Q101 3-Pin X2-DFN T/R | auf Bestellung 1992 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3415UFY4Q-7 | Diodes Inc | Trans MOSFET P-CH 16V 2.5A Automotive 3-Pin X2-DFN T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3415UFY4Q-7 | Diodes Zetex | Trans MOSFET P-CH 16V 2.5A Automotive AEC-Q101 3-Pin X2-DFN T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3415UFY4Q-7 | DIODES INC. | Description: DIODES INC. - DMG3415UFY4Q-7 - Leistungs-MOSFET, p-Kanal, 16 V, 2.5 A, 0.031 ohm, X2-DFN2015, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 16V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 550mV euEccn: NLR Verlustleistung: 650mW Bauform - Transistor: X2-DFN2015 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.031ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 410 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3415UFY4Q-7 | Diodes Zetex | Trans MOSFET P-CH 16V 2.5A Automotive AEC-Q101 3-Pin X2-DFN T/R | auf Bestellung 1992 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3415UFY4Q-7 | Diodes Incorporated | MOSFETs P-Ch -16V Enh FET 8Vgss -12A 0.65W | auf Bestellung 3602 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3415UFY4Q-7 | Diodes Incorporated | Description: MOSFET P-CH 16V 2.5A X2-DFN2015 Packaging: Cut Tape (CT) Package / Case: 3-XDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 4A, 4.5V Power Dissipation (Max): 650mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN2015-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 16 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 282 pF @ 10 V | auf Bestellung 42988 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3415UFY4Q-7 | Diodes Zetex | Trans MOSFET P-CH 16V 2.5A Automotive AEC-Q101 3-Pin X2-DFN T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3415UFY4Q-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -16V; -2.2A; Idm: -12A; 1.35W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -16V Drain current: -2.2A Power dissipation: 1.35W Case: X2-DFN2015-3 Gate-source voltage: ±8V On-state resistance: 65mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 10nC Pulsed drain current: -12A Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3415UFY4Q-7-52 | Diodes Zetex | Trans MOSFET P-CH 16V 2.5A Automotive AEC-Q101 3-Pin X2-DFN T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3415UQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 42.5mOhm @ 4A, 4.5V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2875105 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3415UQ-7 | DIODES INC. | Description: DIODES INC. - DMG3415UQ-7 - Leistungs-MOSFET, p-Kanal, 20 V, 4 A, 0.031 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 550mV euEccn: NLR Verlustleistung: 900mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.031ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2520 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3415UQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 0.9W; SOT23; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Power dissipation: 0.9W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 71mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Application: automotive industry Anzahl je Verpackung: 1 Stücke | auf Bestellung 711 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG3415UQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3415UQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V 24V SOT23 T&R 3K | auf Bestellung 9880 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3415UQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 2874000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3415UQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 42.5mOhm @ 4A, 4.5V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 2874000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3415UQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 0.9W; SOT23; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Power dissipation: 0.9W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 71mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Application: automotive industry | auf Bestellung 711 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3415UQ-7 | DIODES INC. | Description: DIODES INC. - DMG3415UQ-7 - Leistungs-MOSFET, p-Kanal, 20 V, 4 A, 0.031 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 550mV euEccn: NLR Verlustleistung: 900mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.031ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2520 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3415UQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3415UQ-7 | Diodes Inc | Trans MOSFET P-CH 20V 4A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3418L | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3418L-13 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3418L-13 | Diodes Inc | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3418L-13 | Diodes Incorporated | MOSFETs N-Ch Enh FET 30V 12Vgss 4.0A 1.4W | auf Bestellung 9850 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3418L-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 464.3 pF @ 15 V | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3418L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3418L-7 | Diodes Inc | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3418L-7 | Diodes Incorporated | MOSFETs N-Ch Enh FET 30V 12Vgss 4.0A 1.4W | auf Bestellung 8904 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3418L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3418L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 464.3 pF @ 15 V | auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3418L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3418L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 357000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3418L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3418L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3418L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 464.3 pF @ 15 V | auf Bestellung 27257 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3420U-7 | Diodes Zetex | Trans MOSFET N-CH 20V 5.47A 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3420U-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 5.47A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.47A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 434.7 pF @ 10 V | auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3420U-7 | Diodes Zetex | Trans MOSFET N-CH 20V 5.47A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3420U-7 Produktcode: 155587
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Lieblingsprodukt
| Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| DMG3420U-7 | Diodes Zetex | Trans MOSFET N-CH 20V 5.47A 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3420U-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 5.47A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.47A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 434.7 pF @ 10 V | auf Bestellung 38059 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3420U-7 | Diodes Inc | Trans MOSFET N-CH 20V 5.47A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3420U-7 | Diodes Zetex | Trans MOSFET N-CH 20V 5.47A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3420U-7 | Diodes Incorporated | MOSFETs MOSFET,N-CHANNEL | auf Bestellung 22512 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3420UQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 5.47A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 162000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3420UQ-7 | Diodes Inc | Trans MOSFET N-CH 20V 5.47A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3420UQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V SOT23 T&R 3K | auf Bestellung 1790 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3420UQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 5.47A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3420UQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.47A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V Power Dissipation (Max): 740mW Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 434.7 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 168000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3420UQ-7 | DIODES INCORPORATED | DMG3420UQ-7 SMD N channel transistors | auf Bestellung 2259 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG3N60SCT | Diodes Incorporated | MOSFET MOSFET BVDSS: 501V-650V | auf Bestellung 363 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3N60SCT | DIODES INCORPORATED | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 3.7A; 42W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2A Pulsed drain current: 3.7A Power dissipation: 42W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 2.7Ω Mounting: THT Gate charge: 12.6C Kind of package: tube Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3N60SJ3 | Diodes Incorporated | MOSFET MOSFET BVDSS: 501V-650V | auf Bestellung 204 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4406LSS-13 | Diodes Incorporated | Description: MOSFET N CH 30V 10.3A 8-SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1281 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4406LSS-13 | Diodes Incorporated | Description: MOSFET N CH 30V 10.3A 8-SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1281 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4406LSS-13 | Diodes Inc | Trans MOSFET N-CH 30V 10.3A 8-Pin SO T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4407SSS-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 9.9A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V Power Dissipation (Max): 1.45W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V | auf Bestellung 2305 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4407SSS-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4407SSS-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 9.9A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V Power Dissipation (Max): 1.45W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4407SSS-13 | Diodes Inc | Trans MOSFET P-CH 30V 9.9A 8-Pin SO T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4407SSS-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 1.82W; SO8 Case: SO8 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Pulsed drain current: -80A Drain-source voltage: -30V Drain current: -10A Gate charge: 41nC On-state resistance: 17mΩ Power dissipation: 1.82W Gate-source voltage: ±25V Kind of package: 13 inch reel; tape Polarisation: unipolar | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4407SSS-13 | Diodes Zetex | Trans MOSFET P-CH 30V 9.9A 8-Pin SO T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4413LSS | auf Bestellung 2080 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
| DMG4413LSS | Diodes Incorporated | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4413LSS-13 | Diodes Inc | Trans MOSFET P-CH 30V 12A 8-Pin SOP EP T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4413LSS-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 10.5A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4965 pF @ 15 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4413LSS-13 | DIODES INC. | Description: DIODES INC. - DMG4413LSS-13 - Leistungs-MOSFET, p-Kanal, 30 V, 12 A, 6300 µohm, SOIC, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 1.7W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 6300µohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2024 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4413LSS-13 | Diodes Zetex | Trans MOSFET P-CH 30V 12A 8-Pin SOP EP T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4413LSS-13 | Diodes Incorporated | MOSFETs MOSFET,P-CHANNEL | auf Bestellung 9096 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4413LSS-13 | Diodes Zetex | Trans MOSFET P-CH 30V 12A 8-Pin SOP EP T/R | auf Bestellung 25000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4413LSS-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 10.5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4965 pF @ 15 V | auf Bestellung 3142 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4413LSS-13 | DIODES INC. | Description: DIODES INC. - DMG4413LSS-13 - Leistungs-MOSFET, p-Kanal, 30 V, 12 A, 6300 µohm, SOIC, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 1.7W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 6300µohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2024 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4413LSS-13 | Diodes Zetex | Trans MOSFET P-CH 30V 12A 8-Pin SOP EP T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4435SSS | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4435SSS-13 | Diodes Zetex | Trans MOSFET P-CH 30V 7.3A 8-Pin SO T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4435SSS-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 7.3A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 11A, 20V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 20V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1614 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4435SSS-13 | Diodes Incorporated | MOSFET MOSFET,P-CHANNEL | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4435SSS-13 | Diodes Inc | Trans MOSFET P-CH 30V 7.3A 8-Pin SO T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4435SSS-13 | Diodes Zetex | Trans MOSFET P-CH 30V 7.3A 8-Pin SO T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4435SSS-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 7.3A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 11A, 20V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 20V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1614 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4466SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 10A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V Power Dissipation (Max): 1.42W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 478.9 pF @ 15 V | auf Bestellung 11484 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4466SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 82500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4466SSS-13 | DIODES INC. | Description: DIODES INC. - DMG4466SSS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 10 A, 0.015 ohm, SOIC, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.45V euEccn: NLR Verlustleistung: 1.42W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.015ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2465 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4466SSS-13 | Diodes Incorporated | MOSFETs N-Ch MOSFET 30V 60A IDM 1.42W PD | auf Bestellung 4350 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4466SSS-13 | Diodes Inc | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4466SSS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8 Polarisation: unipolar Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: SO8 Gate charge: 17nC On-state resistance: 33mΩ Power dissipation: 1.42W Drain current: 6A Gate-source voltage: ±25V Drain-source voltage: 30V Pulsed drain current: 60A Kind of package: 13 inch reel; tape | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4466SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4466SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 4927 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4466SSS-13 | DIODES INC. | Description: DIODES INC. - DMG4466SSS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 10 A, 0.015 ohm, SOIC, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.45V euEccn: NLR Verlustleistung: 1.42W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.015ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2465 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4466SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 10A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V Power Dissipation (Max): 1.42W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 478.9 pF @ 15 V | auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4466SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 2499 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4466SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 2499 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4466SSSL-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 10A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V Power Dissipation (Max): 1.42W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 478.9 pF @ 15 V | auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4466SSSL-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4466SSSL-13 | Diodes Incorporated | MOSFETs N-Ch MOSFET 30V 60A IDM 1.42W PD | auf Bestellung 4900 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4466SSSL-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 10A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V Power Dissipation (Max): 1.42W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 478.9 pF @ 15 V | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4466SSSL-13 | Diodes Inc | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4466SSSL-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 17500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4466SSSL-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8 Polarisation: unipolar Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: SO8 Gate charge: 17nC On-state resistance: 33mΩ Power dissipation: 1.42W Drain current: 6A Gate-source voltage: ±20V Drain-source voltage: 30V Pulsed drain current: 60A Kind of package: 13 inch reel; tape | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4468LFG | Diodes Incorporated | Description: MOSFET N-CH 30V 7.62A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V Power Dissipation (Max): 990mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: U-DFN3030-8 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4468LFG | Diodes Incorporated | Description: MOSFET N-CH 30V 7.62A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V Power Dissipation (Max): 990mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: U-DFN3030-8 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4468LFG-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 7.62A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V Power Dissipation (Max): 990mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: U-DFN3030-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4468LFG-7 | Diodes Incorporated | MOSFETs N-Ch MOSFET 30V 60A IDM 1.42W PD | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4468LFG-7 | Diodes Inc | Trans MOSFET N-CH 30V 7.62A 8-Pin DFN EP T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4468LFG-7 | Diodes Zetex | Trans MOSFET N-CH 30V 7.62A 8-Pin DFN EP T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4468LFG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.83A; Idm: 45.9A; 990mW Kind of package: 7 inch reel; tape Case: U-DFN3030-8 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 18.85nC On-state resistance: 23.5mΩ Power dissipation: 0.99W Drain current: 4.83A Gate-source voltage: ±20V Drain-source voltage: 30V Pulsed drain current: 45.9A | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4468LFG-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 7.62A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V Power Dissipation (Max): 990mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: U-DFN3030-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4468LK3-13 | Diodes Inc | Trans MOSFET N-CH 30V 9.7A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4468LK3-13 | Diodes Zetex | Trans MOSFET N-CH 30V 9.7A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 85000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4468LK3-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; Idm: 48A; 1.68W; TO252 Kind of package: 13 inch reel; tape Case: TO252 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 18.85nC On-state resistance: 25mΩ Power dissipation: 1.68W Drain current: 6.3A Gate-source voltage: ±20V Drain-source voltage: 30V Pulsed drain current: 48A | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4468LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 9.7A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 11.6A, 10V Power Dissipation (Max): 1.68W (Ta) Vgs(th) (Max) @ Id: 1.95V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4468LK3-13 | Diodes Zetex | Trans MOSFET N-CH 30V 9.7A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4468LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 9.7A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 11.6A, 10V Power Dissipation (Max): 1.68W (Ta) Vgs(th) (Max) @ Id: 1.95V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 15 V | auf Bestellung 1183 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4468LK3-13 | Diodes Incorporated | MOSFETs ENHANCE MODE MOSFET N Chan 30V/6.3-9.7A | auf Bestellung 2125 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4496SSS | Diodes Incorporated | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4496SSS-13 | Diodes INC. | N-канальний ПТ; Udss, В = 30; Id = 10; Ptot, Вт = 1,42; Тип монт. = smd; Ciss, пФ @ Uds, В = 493,5 @ 15; Qg, нКл = 10,2 @ 10 В; Rds = 21,5 мОм @ 10 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 2 В @ 250 мкА; SOICN-8 | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4496SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 32500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4496SSS-13 | Diodes Incorporated | MOSFETs MOSFET N-CHANNEL | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4496SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 32500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4496SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4496SSS-13 | DIODES INC. | Description: DIODES INC. - DMG4496SSS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 10 A, 0.016 ohm, SOIC, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 1.42W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.016ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1025 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4496SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 1125 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4496SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 10A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V Power Dissipation (Max): 1.42W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 493.5 pF @ 15 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4496SSS-13 | Diodes Inc | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4496SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4496SSS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: SO8 Polarisation: unipolar Gate charge: 10.2nC On-state resistance: 29mΩ Power dissipation: 1.42W Drain current: 6A Gate-source voltage: ±25V Drain-source voltage: 30V Pulsed drain current: 60A Kind of package: 13 inch reel; tape | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4496SSS-13 | DIODES INC. | Description: DIODES INC. - DMG4496SSS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 10 A, 0.016 ohm, SOIC, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 1.42W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.016ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1025 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4496SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 1125 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4496SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 10A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V Power Dissipation (Max): 1.42W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 493.5 pF @ 15 V | auf Bestellung 5865 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4496SSSQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V Power Dissipation (Max): 1.42W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 493.5 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4496SSSQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V 30V SO-8 T&R 2.5K | auf Bestellung 1445 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4496SSSQ-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A Automotive AEC-Q101 8-Pin SO T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4511SK4-13 | Diodes Zetex | Trans MOSFET N/P-CH 35V 8.6A/7.8A 5-Pin(4+Tab) DPAK T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4511SK4-13 | Diodes Inc | Trans MOSFET N/P-CH 35V 8.6A/7.8A 5-Pin(4+Tab) DPAK T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4511SK4-13 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 35/-35V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 35/-35V Drain current: 7.8/-8.6A Power dissipation: 1.54W Case: TO252-4 Gate-source voltage: ±20V On-state resistance: 0.035/0.045Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Kind of transistor: complementary pair Semiconductor structure: common drain | auf Bestellung 2431 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4511SK4-13 | Diodes Incorporated | Description: MOSFET N/P-CH 35V 5.3A TO252-4L Packaging: Cut Tape (CT) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.54W Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 5.3A, 5A Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L Part Status: Active | auf Bestellung 14861 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4511SK4-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 31V-40 V-40V,TO252,2.5K | auf Bestellung 3345 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4511SK4-13 | Diodes Zetex | Trans MOSFET N/P-CH 35V 8.6A/7.8A 5-Pin(4+Tab) DPAK T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4511SK4-13 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 35/-35V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 35/-35V Drain current: 7.8/-8.6A Power dissipation: 1.54W Case: TO252-4 Gate-source voltage: ±20V On-state resistance: 0.035/0.045Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Kind of transistor: complementary pair Semiconductor structure: common drain Anzahl je Verpackung: 1 Stücke | auf Bestellung 2431 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG4511SK4-13 | Diodes Incorporated | Description: MOSFET N/P-CH 35V 5.3A TO252-4L Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.54W Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 5.3A, 5A Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L Part Status: Active | auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4710SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 8.8A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11.7A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 1.54W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4710SSS-13 | Diodes Inc | Trans MOSFET N-CH 30V 8.8A 8-Pin SO T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4710SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 8.8A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11.7A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 1.54W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V | auf Bestellung 496 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4710SSS-13 | Diodes Incorporated | MOSFET MOSFET N-CHANNEL | auf Bestellung 270 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4712SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 11.2A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 11.2A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 1.55W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2296 pF @ 15 V | auf Bestellung 443 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4712SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 11.2A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 11.2A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 1.55W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2296 pF @ 15 V | auf Bestellung 443 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4712SSS-13 | Diodes Incorporated | MOSFET MOSFET N-CHANNEL | auf Bestellung 1759 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4712SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 11.2A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 11.2A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 1.55W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2296 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4800LFG-7 | Diodes Incorporated | MOSFETs ENHANCE MODE MOSFET 30V/4.82 - 7.44A | auf Bestellung 35972 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4800LFG-7 | Diodes Inc | Trans MOSFET N-CH 30V 7.44A 8-Pin DFN EP T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4800LFG-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 7.44A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.44A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 940mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: U-DFN3030-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.47 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4800LFG-7 | DIODES INC. | Description: DIODES INC. - DMG4800LFG-7 - Leistungs-MOSFET, n-Kanal, 30 V, 7.44 A, 0.011 ohm, DFN3030, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 7.44A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 940mW Bauform - Transistor: DFN3030 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.011ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4800LFG-7 | Diodes Zetex | Trans MOSFET N-CH 30V 7.44A 8-Pin DFN EP T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LFG-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 7.44A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.44A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 940mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: U-DFN3030-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.47 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V | auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4800LFG-7 | DIODES INC. | Description: DIODES INC. - DMG4800LFG-7 - Leistungs-MOSFET, n-Kanal, 30 V, 7.44 A, 0.011 ohm, DFN3030, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 7.44A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 940mW Bauform - Transistor: DFN3030 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.011ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4800LK3-13 | Diodes Inc | Trans MOSFET N-CH 30V 10A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4800LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 10A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 1.71W (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V | auf Bestellung 35006 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4800LK3-13 | DIODES INC. | Description: DIODES INC. - DMG4800LK3-13 - Leistungs-MOSFET, n-Kanal, 30 V, 10 A, 0.012 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 1.71W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.012ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1782 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4800LK3-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 27500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 10A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 1.71W (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4800LK3-13 | DIODES INC. | Description: DIODES INC. - DMG4800LK3-13 - Leistungs-MOSFET, n-Kanal, 30 V, 10 A, 0.012 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 1.71W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.012ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1782 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4800LK3-13 | Diodes Incorporated | MOSFETs ENHANCE MODE MOSFET N Chan 30V/6.5-10.0A | auf Bestellung 8176 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4800LSD | Diodes Incorporated | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4800LSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.5A 8-Pin SO T/R | auf Bestellung 75000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.5A 8-Pin SO T/R | auf Bestellung 666 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LSD-13 | DIODES INCORPORATED | DMG4800LSD-13 Multi channel transistors | auf Bestellung 2496 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG4800LSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 7.5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.17W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-SO Part Status: Active | auf Bestellung 6070 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4800LSD-13 | DIODES INC. | Description: DIODES INC. - DMG4800LSD-13 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 7.5 A, 7.5 A, 0.012 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 7.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 7.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.012ohm Verlustleistung, p-Kanal: 1.5W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.012ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.5W Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2374 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4800LSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.5A 8-Pin SO T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.5A 8-Pin SO T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LSD-13 | Diodes Inc | Trans MOSFET N-CH 30V 7.5A 8-Pin SO T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4800LSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.5A 8-Pin SO T/R | auf Bestellung 75000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.5A 8-Pin SO T/R | auf Bestellung 112500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.5A 8-Pin SO T/R | auf Bestellung 666 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 7.5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.17W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-SO Part Status: Active | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4800LSD-13 | DIODES INC. | Description: DIODES INC. - DMG4800LSD-13 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 7.5 A, 7.5 A, 0.012 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 7.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 7.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.012ohm Verlustleistung, p-Kanal: 1.5W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.012ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.5W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 980 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4800LSD-13 | Diodes Incorporated | MOSFETs Dual N-Ch 30V VDSS 25 Vgss 42A IDM | auf Bestellung 5572 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4800LSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.5A 8-Pin SO T/R | auf Bestellung 112500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LSDQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 7.5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.17W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 121900 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4800LSDQ-13 | Diodes Inc | Trans MOSFET N-CH 30V 7.5A Automotive 8-Pin SO T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4800LSDQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 7.5A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.17W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 120000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4800LSDQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V 30V SO-8 T&R 2.5K | auf Bestellung 5913 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4800LSDQ-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.5A Automotive AEC-Q101 8-Pin SO T/R | auf Bestellung 120000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4812SSS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS | auf Bestellung 4960 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4812SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 10.7A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 1.54W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4812SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 8A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 10.7A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 1.54W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4822SSD | ams OSRAM | ams OSRAM | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4822SSD | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4822SSD-13 | DIODES INC. | Description: DIODES INC. - DMG4822SSD-13 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 10 A, 10 A, 0.0134 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 10A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0134ohm Verlustleistung, p-Kanal: 1.42W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0134ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.42W Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2249 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4822SSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4822SSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 2134 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4822SSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 62500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4822SSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 10A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.42W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active | auf Bestellung 8855 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4822SSD-13 | DIODES INC. | Description: DIODES INC. - DMG4822SSD-13 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 10 A, 10 A, 0.0134 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 10A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0134ohm Verlustleistung, p-Kanal: 1.42W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0134ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.42W Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2249 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4822SSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 62500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4822SSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4822SSD-13 | Diodes Inc | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4822SSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 10A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.42W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active | auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4822SSD-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 31V-40 1V-40V,SO-8,2.5K | auf Bestellung 5157 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4822SSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 2134 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4822SSDQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 10A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.42W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 582500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4822SSDQ-13 | DIODES INC. | Description: DIODES INC. - DMG4822SSDQ-13 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 10 A, 10 A, 0.0134 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 10A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0134ohm Verlustleistung, p-Kanal: 1.42W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0134ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.42W Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2480 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4822SSDQ-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R Automotive AEC-Q101 | auf Bestellung 575000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4822SSDQ-13 | Diodes Inc | Trans MOSFET N-CH 30V 10A Automotive 8-Pin SO T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4822SSDQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 31V-40V | auf Bestellung 3423 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4822SSDQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 10A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.42W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 589853 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4822SSDQ-13 | DIODES INC. | Description: DIODES INC. - DMG4822SSDQ-13 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 10 A, 10 A, 0.0134 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 10A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0134ohm Verlustleistung, p-Kanal: 1.42W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0134ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.42W Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2480 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG4822SSDQ-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG48270C043_04WN | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 4.3"; 480x272; Illumin: LED; 16MBFLASH; RGB; 300cd/m2 Type of display: TFT Kind of display: graphical; matrix TN Screen size: 4.3" Display resolution: 480x272 Illumination: LED Memory: 16MB FLASH No. of colours: 262k Window dimensions (H x W): 95.04x53.86mm Dimensions: 121.92x73.15x13.8mm Operating temperature: -10...60°C Colour: RGB Interface: 18bit RGB; CMOS/TTL; RS232; SD; UART Luminosity: 300cd/m2 Connector pinout layout: 1x10 Kind of controller: T5L0 Kind of connector: 10pin; SD Supply voltage: 4.5...5.5V DC Related items: HDL662B Touchpad: none Anzahl je Verpackung: 1 Stücke | auf Bestellung 7 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG48270C043_04WN | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 4.3"; 480x272; Illumin: LED; 16MBFLASH; RGB; 300cd/m2 Type of display: TFT Kind of display: graphical; matrix TN Screen size: 4.3" Display resolution: 480x272 Illumination: LED Memory: 16MB FLASH No. of colours: 262k Window dimensions (H x W): 95.04x53.86mm Dimensions: 121.92x73.15x13.8mm Operating temperature: -10...60°C Colour: RGB Interface: 18bit RGB; CMOS/TTL; RS232; SD; UART Luminosity: 300cd/m2 Connector pinout layout: 1x10 Kind of controller: T5L0 Kind of connector: 10pin; SD Supply voltage: 4.5...5.5V DC Related items: HDL662B Touchpad: none | auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG48270C043_04WTC | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 4.3"; 480x272; Illumin: LED; 16MBFLASH; RGB; 250cd/m2 Type of display: TFT Kind of display: graphical; matrix TN Screen size: 4.3" Display resolution: 480x272 Illumination: LED No. of colours: 262k Window dimensions (H x W): 95.04x53.86mm Dimensions: 121.92x73.15x15.6mm Operating temperature: -10...60°C Colour: RGB Interface: 18bit RGB; CMOS/TTL; I2C; RS232; SD; UART Luminosity: 250cd/m2 Kind of connector: 10pin; SD Supply voltage: 4.5...5.5V DC Touchpad: capacitive Memory: 16MB FLASH Related items: HDL662B Kind of controller: T5L0 Connector pinout layout: 1x10 Anzahl je Verpackung: 1 Stücke | auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG48270C043_04WTC | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 4.3"; 480x272; Illumin: LED; 16MBFLASH; RGB; 250cd/m2 Type of display: TFT Kind of display: graphical; matrix TN Screen size: 4.3" Display resolution: 480x272 Illumination: LED No. of colours: 262k Window dimensions (H x W): 95.04x53.86mm Dimensions: 121.92x73.15x15.6mm Operating temperature: -10...60°C Colour: RGB Interface: 18bit RGB; CMOS/TTL; I2C; RS232; SD; UART Luminosity: 250cd/m2 Kind of connector: 10pin; SD Supply voltage: 4.5...5.5V DC Touchpad: capacitive Memory: 16MB FLASH Related items: HDL662B Kind of controller: T5L0 Connector pinout layout: 1x10 | auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG48270C043_04WTR | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 4.3"; 480x272; Illumin: LED; 16MBFLASH; RGB; 200cd/m2 Type of display: TFT Kind of display: graphical; matrix TN Screen size: 4.3" Display resolution: 480x272 Illumination: LED No. of colours: 262k Window dimensions (H x W): 95.04x53.86mm Dimensions: 121.92x73.15x15.3mm Operating temperature: -10...60°C Colour: RGB Interface: 18bit RGB; CMOS/TTL; RS232; SD; UART Luminosity: 200cd/m2 Kind of connector: 10pin; SD Supply voltage: 4.5...5.5V DC Touchpad: resistance Memory: 16MB FLASH Related items: HDL662B Kind of controller: T5L0 Connector pinout layout: 1x10 Anzahl je Verpackung: 1 Stücke | auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG48270C043_04WTR | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 4.3"; 480x272; Illumin: LED; 16MBFLASH; RGB; 200cd/m2 Type of display: TFT Kind of display: graphical; matrix TN Screen size: 4.3" Display resolution: 480x272 Illumination: LED No. of colours: 262k Window dimensions (H x W): 95.04x53.86mm Dimensions: 121.92x73.15x15.3mm Operating temperature: -10...60°C Colour: RGB Interface: 18bit RGB; CMOS/TTL; RS232; SD; UART Luminosity: 200cd/m2 Kind of connector: 10pin; SD Supply voltage: 4.5...5.5V DC Touchpad: resistance Memory: 16MB FLASH Related items: HDL662B Kind of controller: T5L0 Connector pinout layout: 1x10 | auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG48270C043_05WN | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 4.3"; 480x272; Illumin: LED; 8MBFLASH; RGB; 300cd/m2 Type of display: TFT Kind of display: graphical; matrix TN Screen size: 4.3" Display resolution: 480x272 Illumination: LED No. of colours: 262k Window dimensions (H x W): 95.04x53.86mm Dimensions: 121.92x73.15x13.8mm Operating temperature: -20...70°C Colour: RGB Interface: 18bit RGB; CMOS/TTL; RS232; SD; UART Luminosity: 300cd/m2 Kind of connector: 10pin; SD Supply voltage: 4.5...5.5V DC Touchpad: none Memory: 8MB FLASH Related items: HDL662B Kind of controller: T5L0 Connector pinout layout: 1x10 Anzahl je Verpackung: 1 Stücke | auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG48270C043_05WN | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 4.3"; 480x272; Illumin: LED; 8MBFLASH; RGB; 300cd/m2 Type of display: TFT Kind of display: graphical; matrix TN Screen size: 4.3" Display resolution: 480x272 Illumination: LED No. of colours: 262k Window dimensions (H x W): 95.04x53.86mm Dimensions: 121.92x73.15x13.8mm Operating temperature: -20...70°C Colour: RGB Interface: 18bit RGB; CMOS/TTL; RS232; SD; UART Luminosity: 300cd/m2 Kind of connector: 10pin; SD Supply voltage: 4.5...5.5V DC Touchpad: none Memory: 8MB FLASH Related items: HDL662B Kind of controller: T5L0 Connector pinout layout: 1x10 | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG48270C043_05WTC | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 4.3"; 480x272; Illumin: LED; 8MBFLASH; RGB; 250cd/m2 Type of display: TFT Kind of display: graphical; matrix TN Screen size: 4.3" Display resolution: 480x272 Illumination: LED No. of colours: 262k Window dimensions (H x W): 95.04x53.86mm Dimensions: 121.92x73.15x15.6mm Operating temperature: -20...70°C Colour: RGB Interface: 18bit RGB; CMOS/TTL; I2C; RS232; SD; UART Luminosity: 250cd/m2 Kind of connector: 10pin; SD Supply voltage: 4.5...5.5V DC Touchpad: capacitive Memory: 8MB FLASH Related items: HDL662B Kind of controller: T5L0 Connector pinout layout: 1x10 Anzahl je Verpackung: 1 Stücke | auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG48270C043_05WTC | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 4.3"; 480x272; Illumin: LED; 8MBFLASH; RGB; 250cd/m2 Type of display: TFT Kind of display: graphical; matrix TN Screen size: 4.3" Display resolution: 480x272 Illumination: LED No. of colours: 262k Window dimensions (H x W): 95.04x53.86mm Dimensions: 121.92x73.15x15.6mm Operating temperature: -20...70°C Colour: RGB Interface: 18bit RGB; CMOS/TTL; I2C; RS232; SD; UART Luminosity: 250cd/m2 Kind of connector: 10pin; SD Supply voltage: 4.5...5.5V DC Touchpad: capacitive Memory: 8MB FLASH Related items: HDL662B Kind of controller: T5L0 Connector pinout layout: 1x10 | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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