Produkte > DMG
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||||
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| DMG 100 | LOVATO ELECTRIC | Category: Power Network Meters and Analyzers Description: Meter: network parameters; for DIN rail mounting; LCD; DMG; 1A,5A Mounting: for DIN rail mounting Manufacturer series: DMG Kind of display used: LCD Active power measuring accuracy: ±1% True effective value measurement: True RMS Input current: 1A; 5A Kind of measurement: indirect with 1A current transformer; indirect with 5A current transformer Frequency measuring range: 45...65Hz AC voltage measuring range: 50...720V AC current measuring accuracy: ±0,5% Dimensions (W x H x D): 71.6x90x63mm Illumination: yes Type of meter: network parameters AC voltage measuring accuracy: ±0,5% IP rating: IP20 at terminal side; IP40 (from the front) Measurement: active power; AC voltage; apparent power; energy; frequency; harmonics; power factor; reactive power Supply voltage: 100...240V AC; 120...250V DC Measuring instrument features: multilanguage menu Kind of network: three-phase Kind of meter: digital; mounting | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG 100 | LOVATO ELECTRIC | Category: Power Network Meters and Analyzers Description: Meter: network parameters; for DIN rail mounting; LCD; DMG; 1A,5A Mounting: for DIN rail mounting Manufacturer series: DMG Kind of display used: LCD Active power measuring accuracy: ±1% True effective value measurement: True RMS Input current: 1A; 5A Kind of measurement: indirect with 1A current transformer; indirect with 5A current transformer Frequency measuring range: 45...65Hz AC voltage measuring range: 50...720V AC current measuring accuracy: ±0,5% Dimensions (W x H x D): 71.6x90x63mm Illumination: yes Type of meter: network parameters AC voltage measuring accuracy: ±0,5% IP rating: IP20 at terminal side; IP40 (from the front) Measurement: active power; AC voltage; apparent power; energy; frequency; harmonics; power factor; reactive power Supply voltage: 100...240V AC; 120...250V DC Measuring instrument features: multilanguage menu Kind of network: three-phase Kind of meter: digital; mounting Anzahl je Verpackung: 1 Stücke | auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG 110 | LOVATO ELECTRIC | Category: Power Network Meters and Analyzers Description: Meter: network parameters; for DIN rail mounting; LCD; DMG; 1A,5A Supply voltage: 100...240V AC; 120...250V DC IP rating: IP20 at terminal side; IP40 (from the front) Manufacturer series: DMG Kind of network: three-phase Kind of meter: digital; mounting Kind of display used: LCD Active power measuring accuracy: ±1% True effective value measurement: True RMS Input current: 1A; 5A Kind of measurement: indirect with 1A current transformer; indirect with 5A current transformer Frequency measuring range: 45...65Hz AC voltage measuring range: 50...720V AC current measuring accuracy: ±0,5% Interface: RS485 Dimensions (W x H x D): 71.6x90x63mm Illumination: yes Type of meter: network parameters AC voltage measuring accuracy: ±0,5% Measurement: active power; AC voltage; apparent power; energy; frequency; harmonics; power factor; reactive power Mounting: for DIN rail mounting Measuring instrument features: multilanguage menu | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG 110 | LOVATO ELECTRIC | Category: Power Network Meters and Analyzers Description: Meter: network parameters; for DIN rail mounting; LCD; DMG; 1A,5A Supply voltage: 100...240V AC; 120...250V DC IP rating: IP20 at terminal side; IP40 (from the front) Manufacturer series: DMG Kind of network: three-phase Kind of meter: digital; mounting Kind of display used: LCD Active power measuring accuracy: ±1% True effective value measurement: True RMS Input current: 1A; 5A Kind of measurement: indirect with 1A current transformer; indirect with 5A current transformer Frequency measuring range: 45...65Hz AC voltage measuring range: 50...720V AC current measuring accuracy: ±0,5% Interface: RS485 Dimensions (W x H x D): 71.6x90x63mm Illumination: yes Type of meter: network parameters AC voltage measuring accuracy: ±0,5% Measurement: active power; AC voltage; apparent power; energy; frequency; harmonics; power factor; reactive power Mounting: for DIN rail mounting Measuring instrument features: multilanguage menu Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG 200 L01 | LOVATO ELECTRIC | Category: Power Network Meters and Analyzers Description: Meter: network parameters; for DIN rail mounting; LCD; 128x80 IP rating: IP20 at terminal side; IP40 (from the front) Manufacturer series: DMG Kind of network: three-phase Illumination: yes Display resolution: 128x80 Measuring instrument features: multilanguage menu Type of meter: network parameters True effective value measurement: True RMS Measurement: AC current; active power; AC voltage; apparent power; energy; frequency; harmonics; power factor; reactive power Kind of meter: digital; mounting Dimensions (W x H x D): 71.6x90x63mm Kind of measurement: indirect with 5A current transformer AC current measuring range: 10mA...6A AC voltage measuring range: 10...480V Frequency measuring range: 45...65Hz AC current measuring accuracy: ±0.5% AC voltage measuring accuracy: ±0.5% Active power measuring accuracy: ±1% Mounting: for DIN rail mounting Kind of display used: LCD | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG 200 L01 | LOVATO ELECTRIC | Category: Power Network Meters and Analyzers Description: Meter: network parameters; for DIN rail mounting; LCD; 128x80 IP rating: IP20 at terminal side; IP40 (from the front) Manufacturer series: DMG Kind of network: three-phase Illumination: yes Display resolution: 128x80 Measuring instrument features: multilanguage menu Type of meter: network parameters True effective value measurement: True RMS Measurement: AC current; active power; AC voltage; apparent power; energy; frequency; harmonics; power factor; reactive power Kind of meter: digital; mounting Dimensions (W x H x D): 71.6x90x63mm Kind of measurement: indirect with 5A current transformer AC current measuring range: 10mA...6A AC voltage measuring range: 10...480V Frequency measuring range: 45...65Hz AC current measuring accuracy: ±0.5% AC voltage measuring accuracy: ±0.5% Active power measuring accuracy: ±1% Mounting: for DIN rail mounting Kind of display used: LCD Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG 210 | LOVATO ELECTRIC | Category: Power Network Meters and Analyzers Description: Meter: network parameters; for DIN rail mounting; LCD; 128x80 Type of meter: network parameters Kind of measurement: indirect with 5A current transformer Mounting: for DIN rail mounting Kind of meter: digital; mounting Kind of display used: LCD Display resolution: 128x80 Measurement: AC current; active power; AC voltage; apparent power; energy; frequency; harmonics; power factor; reactive power Manufacturer series: DMG Kind of network: three-phase AC voltage measuring range: 10...480V AC current measuring range: 10mA...6A Frequency measuring range: 45...65Hz AC voltage measuring accuracy: ±0.5% AC current measuring accuracy: ±0.5% True effective value measurement: True RMS Interface: RS485 Measuring instrument features: multilanguage menu IP rating: IP20 at terminal side; IP40 (from the front) Dimensions (W x H x D): 71.6x90x63mm Illumination: yes Active power measuring accuracy: ±1% | auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG 210 | LOVATO ELECTRIC | Category: Power Network Meters and Analyzers Description: Meter: network parameters; for DIN rail mounting; LCD; 128x80 Type of meter: network parameters Kind of measurement: indirect with 5A current transformer Mounting: for DIN rail mounting Kind of meter: digital; mounting Kind of display used: LCD Display resolution: 128x80 Measurement: AC current; active power; AC voltage; apparent power; energy; frequency; harmonics; power factor; reactive power Manufacturer series: DMG Kind of network: three-phase AC voltage measuring range: 10...480V AC current measuring range: 10mA...6A Frequency measuring range: 45...65Hz AC voltage measuring accuracy: ±0.5% AC current measuring accuracy: ±0.5% True effective value measurement: True RMS Interface: RS485 Measuring instrument features: multilanguage menu IP rating: IP20 at terminal side; IP40 (from the front) Dimensions (W x H x D): 71.6x90x63mm Illumination: yes Active power measuring accuracy: ±1% Anzahl je Verpackung: 1 Stücke | auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG 300 L01 | LOVATO ELECTRIC | Category: Power Network Meters and Analyzers Description: Meter: network parameters; for DIN rail mounting; LCD; 128x80 Mounting: for DIN rail mounting Manufacturer series: DMG Related items: EXP1001; EXP1013; EXP1020 Kind of network: three-phase Kind of meter: digital; mounting Kind of display used: LCD Active power measuring accuracy: ±0,5% True effective value measurement: True RMS Display resolution: 128x80 Kind of measurement: indirect with 1A current transformer; indirect with 5A current transformer Frequency measuring range: 45...65Hz AC voltage measuring range: 10...480V AC current measuring accuracy: ±0,2% Dimensions (W x H x D): 71.6x90x63mm Illumination: yes Type of meter: network parameters AC voltage measuring accuracy: ±0,2% IP rating: IP20 at terminal side; IP40 (from the front) Measurement: AC current; active power; AC voltage; apparent power; energy; frequency; power factor; reactive power AC current measuring range: 10mA...6A Measuring instrument features: FFT up to 31st harmonic; multilanguage menu Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG 300 L01 | LOVATO ELECTRIC | Category: Power Network Meters and Analyzers Description: Meter: network parameters; for DIN rail mounting; LCD; 128x80 Mounting: for DIN rail mounting Manufacturer series: DMG Related items: EXP1001; EXP1013; EXP1020 Kind of network: three-phase Kind of meter: digital; mounting Kind of display used: LCD Active power measuring accuracy: ±0,5% True effective value measurement: True RMS Display resolution: 128x80 Kind of measurement: indirect with 1A current transformer; indirect with 5A current transformer Frequency measuring range: 45...65Hz AC voltage measuring range: 10...480V AC current measuring accuracy: ±0,2% Dimensions (W x H x D): 71.6x90x63mm Illumination: yes Type of meter: network parameters AC voltage measuring accuracy: ±0,2% IP rating: IP20 at terminal side; IP40 (from the front) Measurement: AC current; active power; AC voltage; apparent power; energy; frequency; power factor; reactive power AC current measuring range: 10mA...6A Measuring instrument features: FFT up to 31st harmonic; multilanguage menu | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG 600 | LOVATO ELECTRIC | Category: Power Network Meters and Analyzers Description: Meter: network parameters; on panel; digital,mounting; LCD; 1A,5A Supply voltage: 100...440V AC; 120...250V DC Mounting: on panel Communictions protocol: Modbus RTU; TCP Kind of network: three-phase Input current: 1A; 5A Related items: EXP8000 Measuring instrument features: multilanguage menu Type of meter: network parameters True effective value measurement: True RMS Measurement: AC current; active power; AC voltage; apparent power; energy; frequency; power factor; reactive power Kind of meter: digital; mounting Dimensions (W x H x D): 96x96x73.5mm Kind of measurement: indirect with 1A current transformer; indirect with 5A current transformer AC voltage measuring range: 50...720V Frequency measuring range: 45...65Hz AC current measuring accuracy: ±0.5% AC voltage measuring accuracy: ±0.5% Active power measuring accuracy: ±1% Kind of display used: LCD IP rating: IP20 at terminal side; IP54 (from the front) Mounting hole diameter: 92x92mm | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG 600 | LOVATO ELECTRIC | Category: Power Network Meters and Analyzers Description: Meter: network parameters; on panel; digital,mounting; LCD; 1A,5A Supply voltage: 100...440V AC; 120...250V DC Mounting: on panel Communictions protocol: Modbus RTU; TCP Kind of network: three-phase Input current: 1A; 5A Related items: EXP8000 Measuring instrument features: multilanguage menu Type of meter: network parameters True effective value measurement: True RMS Measurement: AC current; active power; AC voltage; apparent power; energy; frequency; power factor; reactive power Kind of meter: digital; mounting Dimensions (W x H x D): 96x96x73.5mm Kind of measurement: indirect with 1A current transformer; indirect with 5A current transformer AC voltage measuring range: 50...720V Frequency measuring range: 45...65Hz AC current measuring accuracy: ±0.5% AC voltage measuring accuracy: ±0.5% Active power measuring accuracy: ±1% Kind of display used: LCD IP rating: IP20 at terminal side; IP54 (from the front) Mounting hole diameter: 92x92mm Anzahl je Verpackung: 1 Stücke | auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG 610 | LOVATO ELECTRIC | DMG610 Power Network Meters and Analyzers | auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG-02P-14-00A(H) | NINGBO DEGSON ELECTRICAL CO.LTD | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) | ||||||||||||||||||||
| DMG-02P-14-00Z(H) | DEGSON ELECTRONICS | Category: Din Rail Mounting Enclosures Description: Enclosure: for DIN rail mounting; polycarbonate; green; UL94V-0 Type of enclosure: for DIN rail mounting Body colour: green Enclosure material: polycarbonate Flammability rating: UL94V-0 | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG-02P-14-00Z(H) | DEGSON ELECTRONICS | Category: Din Rail Mounting Enclosures Description: Enclosure: for DIN rail mounting; polycarbonate; green; UL94V-0 Type of enclosure: for DIN rail mounting Body colour: green Enclosure material: polycarbonate Flammability rating: UL94V-0 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG-W15-3C2C-WHT-180 | MOBILE MARK | Description: MOBILE MARK - DMG-W15-3C2C-WHT-180 - HF-Antenne, 4.9 bis 6GHz, GNNS / GPS / Glonass / Galileo / BeiDou / QZSS / WiFi, 2.5dBi, 10W tariffCode: 85291069 Frequenz, min.: 4.9GHz productTraceability: No rohsCompliant: YES Stehwellenverhältnis (VSWR): 2 euEccn: NLR Frequenz, max.: 6GHz hazardous: false Verstärkung: 2.5dBi rohsPhthalatesCompliant: YES Eingangsimpedanz: 50ohm Antennenpolarisation: - Eingangsleistung: 10W usEccn: EAR99 | auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1012T | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1012T-13 | Diodes Inc | Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-523 | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1012T-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 630MA SOT523 T&R Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 280mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V | auf Bestellung 269500 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1012T-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 450mA; Idm: 3A; 280mW; SOT523 Case: SOT523 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.45A On-state resistance: 0.7Ω Type of transistor: N-MOSFET Power dissipation: 0.28W Polarisation: unipolar Gate charge: 736.6pC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: 3A Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1012T-13 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-523 T/R | auf Bestellung 2760000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012T-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 630MA SOT523 T&R Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 280mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V | auf Bestellung 260000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1012T-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 450mA; Idm: 3A; 280mW; SOT523 Case: SOT523 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.45A On-state resistance: 0.7Ω Type of transistor: N-MOSFET Power dissipation: 0.28W Polarisation: unipolar Gate charge: 736.6pC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: 3A | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1012T-13 | Diodes Incorporated | MOSFET 20V N-Ch Enhance Mode MOSFET | auf Bestellung 26075 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG1012T-13 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-523 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1012T-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-523 T/R | auf Bestellung 2283000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012T-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 630MA SOT-523 Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 280mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V | auf Bestellung 397267 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1012T-7 | DIODES/ZETEX | N-MOSFET 20V; 0.45A; 0.28W; 2kV; -55..+150°C DMG1012T-7 TDMG1012T-7 | auf Bestellung 25050 Stücke: Lieferzeit 7-14 Tag (e) | |||||||||||||||||||
| DMG1012T-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.28W; SOT523 Case: SOT523 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.45A On-state resistance: 0.3Ω Type of transistor: N-MOSFET Power dissipation: 0.28W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±6V | auf Bestellung 5210 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012T-7 | Diodes Incorporated | MOSFET MOSFET N-CHANNEL SOT-523 | auf Bestellung 986108 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG1012T-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-523 T/R | auf Bestellung 2716 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012T-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-523 T/R | auf Bestellung 2716 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012T-7 | DIODES INC. | Description: DIODES INC. - DMG1012T-7 - Leistungs-MOSFET, n-Kanal, 20 V, 630 mA, 0.3 ohm, SOT-523, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 630mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 280mW Bauform - Transistor: SOT-523 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.3ohm | auf Bestellung 1216570 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1012T-7 | Diodes Inc | Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-523 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1012T-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 630MA SOT-523 Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 280mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V | auf Bestellung 393000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1012T-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.28W; SOT523 Case: SOT523 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.45A On-state resistance: 0.3Ω Type of transistor: N-MOSFET Power dissipation: 0.28W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±6V Anzahl je Verpackung: 10 Stücke | auf Bestellung 5210 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1012T-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-523 T/R | auf Bestellung 2283000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012T-7 | HXY MOSFET | Transistor N-Channel MOSFET; 20V; 8V; 150mOhm; 800mA; 150mW; -55°C ~ 150°C; Equivalent: DMG1012T-13; DMG1012T-7 HXY MOSFET TDMG1012T-7 HXY Anzahl je Verpackung: 250 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1012T-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-523 T/R | auf Bestellung 591000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012T-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-523 T/R | auf Bestellung 591000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012T-7 | DIODES INC. | Description: DIODES INC. - DMG1012T-7 - Leistungs-MOSFET, n-Kanal, 20 V, 630 mA, 0.3 ohm, SOT-523, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 630mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 280mW Bauform - Transistor: SOT-523 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.3ohm | auf Bestellung 1216570 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1012T-7 NA1.. | DIODES/ZETEX | N-MOSFET 20V; 0.45A; 0.28W; 2kV; -55..+150°C DMG1012T-7 TDMG1012T-7 Anzahl je Verpackung: 100 Stücke | auf Bestellung 299 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1012TQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.28W; SOT523 Case: SOT523 Mounting: SMD Kind of package: reel; tape Application: automotive industry Drain-source voltage: 20V Drain current: 0.45A On-state resistance: 0.3Ω Type of transistor: N-MOSFET Power dissipation: 0.28W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±6V Anzahl je Verpackung: 10 Stücke | auf Bestellung 1590 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1012TQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A Automotive AEC-Q101 3-Pin SOT-523 T/R | auf Bestellung 87000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012TQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A Automotive AEC-Q101 3-Pin SOT-523 T/R | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012TQ-7 | DIODES INC. | Description: DIODES INC. - DMG1012TQ-7 - Leistungs-MOSFET, n-Kanal, 20 V, 630 mA, 0.3 ohm, SOT-523, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 630mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 280mW Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 280mW Bauform - Transistor: SOT-523 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.3ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.3ohm | auf Bestellung 47426 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1012TQ-7 | Diodes Inc | Trans MOSFET N-CH 20V 0.63A Automotive 3-Pin SOT-523 T/R | auf Bestellung 51000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1012TQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A Automotive AEC-Q101 3-Pin SOT-523 T/R | auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012TQ-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 630MA SOT523 Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 280mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 969671 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1012TQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A Automotive AEC-Q101 3-Pin SOT-523 T/R | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012TQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A Automotive AEC-Q101 3-Pin SOT-523 T/R | auf Bestellung 255 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1012TQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A Automotive AEC-Q101 3-Pin SOT-523 T/R | auf Bestellung 255 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1012TQ-7 | DIODES INC. | Description: DIODES INC. - DMG1012TQ-7 - Leistungs-MOSFET, n-Kanal, 20 V, 630 mA, 0.3 ohm, SOT-523, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 630mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 280mW Bauform - Transistor: SOT-523 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.3ohm | auf Bestellung 47426 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1012TQ-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 630MA SOT523 Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 280mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 966000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1012TQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A Automotive AEC-Q101 3-Pin SOT-523 T/R | auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012TQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.28W; SOT523 Case: SOT523 Mounting: SMD Kind of package: reel; tape Application: automotive industry Drain-source voltage: 20V Drain current: 0.45A On-state resistance: 0.3Ω Type of transistor: N-MOSFET Power dissipation: 0.28W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±6V | auf Bestellung 1590 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012TQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: | auf Bestellung 345938 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG1012TQ-7-52 | Diodes Zetex | N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1012TQ-7-52 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT523 T&R Packaging: Bulk Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 280mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.737 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1012UW | DIODES INC. | Description: DIODES INC. - DMG1012UW - Leistungs-MOSFET, Anreicherungstyp, n-Kanal, 20 V, 1 A, 0.3 ohm, SOT-323, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 500mV euEccn: NLR Verlustleistung: 290mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.3ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 221375 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1012UW | DIODES INC. | Description: DIODES INC. - DMG1012UW - Leistungs-MOSFET, Anreicherungstyp, n-Kanal, 20 V, 1 A, 0.3 ohm, SOT-323, Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: YES Verlustleistung: 290 Kanaltyp: n-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.3 rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 SVHC: No SVHC (17-Jan-2023) | auf Bestellung 185950 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1012UW-7 | Diodes Zetex | Trans MOSFET N-CH 20V 1A 3-Pin SOT-323 T/R | auf Bestellung 78000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012UW-7 | DIODES INC. | Description: DIODES INC. - DMG1012UW-7 - Leistungs-MOSFET, n-Kanal, 20 V, 1 A, 0.3 ohm, SOT-323, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20 rohsCompliant: YES Dauer-Drainstrom Id: 1 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Verlustleistung Pd: 290 Gate-Source-Schwellenspannung, max.: 1 euEccn: NLR Verlustleistung: 290 Bauform - Transistor: SOT-323 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3 Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.3 Rds(on)-Prüfspannung: 4.5 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.3 SVHC: No SVHC (17-Jan-2023) | auf Bestellung 19540 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1012UW-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 1A SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 290mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V | auf Bestellung 6050381 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1012UW-7 | Diodes Zetex | Trans MOSFET N-CH 20V 1A 3-Pin SOT-323 T/R | auf Bestellung 78000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012UW-7 | DIODES/ZETEX | N-MOSFET 20V 1A 450mΩ 290mW DMG1012UW-7 Diodes TDMG1012uw Anzahl je Verpackung: 500 Stücke | auf Bestellung 9000 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1012UW-7 | Diodes Zetex | Trans MOSFET N-CH 20V 1A 3-Pin SOT-323 T/R | auf Bestellung 497 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012UW-7 | Diodes Zetex | Trans MOSFET N-CH 20V 1A 3-Pin SOT-323 T/R | auf Bestellung 497 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1012UW-7 | Diodes Zetex | Trans MOSFET N-CH 20V 1A 3-Pin SOT-323 T/R | auf Bestellung 915000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012UW-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1A; 0.29W; SOT323 Case: SOT323 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 1A On-state resistance: 0.3Ω Type of transistor: N-MOSFET Power dissipation: 0.29W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±6V | auf Bestellung 14990 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012UW-7 | Diodes Incorporated | MOSFET MOSFET N-CHANNEL SOT-323 | auf Bestellung 312746 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG1012UW-7 | DIODES INC. | Description: DIODES INC. - DMG1012UW-7 - Leistungs-MOSFET, n-Kanal, 20 V, 1 A, 0.3 ohm, SOT-323, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20 rohsCompliant: YES Dauer-Drainstrom Id: 1 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Verlustleistung Pd: 290 Gate-Source-Schwellenspannung, max.: 1 euEccn: NLR Verlustleistung: 290 Bauform - Transistor: SOT-323 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3 Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.3 Rds(on)-Prüfspannung: 4.5 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.3 SVHC: No SVHC (17-Jan-2023) | auf Bestellung 19540 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1012UW-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 1A SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 290mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V | auf Bestellung 6047900 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1012UW-7 | Diodes Zetex | Trans MOSFET N-CH 20V 1A 3-Pin SOT-323 T/R | auf Bestellung 411000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012UW-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1A; 0.29W; SOT323 Case: SOT323 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 1A On-state resistance: 0.3Ω Type of transistor: N-MOSFET Power dissipation: 0.29W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±6V Anzahl je Verpackung: 10 Stücke | auf Bestellung 14990 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1012UW-7 | Diodes Inc | Trans MOSFET N-CH 20V 1A 3-Pin SOT-323 T/R | auf Bestellung 177000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1012UW-7 | Diodes Zetex | Trans MOSFET N-CH 20V 1A 3-Pin SOT-323 T/R | auf Bestellung 411000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012UW-7 | Diodes Zetex | Trans MOSFET N-CH 20V 1A 3-Pin SOT-323 T/R | auf Bestellung 915000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012UWQ-7 | Diodes Zetex | DMG1012UWQ-7 | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012UWQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 6A; 610mW; SOT323 Case: SOT323 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.75A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Power dissipation: 0.61W Polarisation: unipolar Gate charge: 1nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: 6A | auf Bestellung 2710 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012UWQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V SOT323 T&R 3K | auf Bestellung 443 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG1012UWQ-7 | Diodes Zetex | N-Channel Enhancement Mode MOSFET | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012UWQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT323 T&R Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 950mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 460mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 16 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 47680 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1012UWQ-7 | Diodes Inc | MOSFET BVDSS: 8V24V SOT323 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1012UWQ-7 | Diodes Zetex | N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1012UWQ-7 | Diodes Zetex | N-Channel Enhancement Mode MOSFET | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012UWQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT323 T&R Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 950mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 460mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 16 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 45000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1012UWQ-7 | Diodes Zetex | N-Channel Enhancement Mode MOSFET | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1012UWQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 6A; 610mW; SOT323 Case: SOT323 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.75A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Power dissipation: 0.61W Polarisation: unipolar Gate charge: 1nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: 6A Anzahl je Verpackung: 10 Stücke | auf Bestellung 2710 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1013T | DIODES | 10 SOT-523 | auf Bestellung 60000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| DMG1013T-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.33A; Idm: -6A; 0.27W Case: SOT523 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -0.33A On-state resistance: 0.7Ω Type of transistor: P-MOSFET Power dissipation: 0.27W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -6A Anzahl je Verpackung: 10 Stücke | auf Bestellung 940 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1013T-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.46A 3-Pin SOT-523 T/R | auf Bestellung 144000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013T-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.46A 3-Pin SOT-523 T/R | auf Bestellung 807000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013T-7 | DIODES INC. | Description: DIODES INC. - DMG1013T-7 - Leistungs-MOSFET, AEC-Q101, p-Kanal, 20 V, 460 mA, 0.5 ohm, SOT-523, Oberflächenmontage tariffCode: 85412100 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Verlustleistung: 270 Kanaltyp: p-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.5 rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 SVHC: No SVHC (17-Jan-2023) | auf Bestellung 117153 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1013T-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.46A 3-Pin SOT-523 T/R | auf Bestellung 898 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013T-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.46A 3-Pin SOT-523 T/R | auf Bestellung 144000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013T-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 460MA SOT523 Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 460mA (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 350mA, 4.5V Power Dissipation (Max): 270mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.622 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V | auf Bestellung 831121 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1013T-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.46A 3-Pin SOT-523 T/R | auf Bestellung 281000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013T-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.33A; Idm: -6A; 0.27W Case: SOT523 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -0.33A On-state resistance: 0.7Ω Type of transistor: P-MOSFET Power dissipation: 0.27W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -6A | auf Bestellung 940 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013T-7 | Diodes Incorporated | MOSFET MOSFET P-CHANNEL SOT-523 | auf Bestellung 1731349 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG1013T-7 | DIODES INC. | Description: DIODES INC. - DMG1013T-7 - Leistungs-MOSFET, AEC-Q101, p-Kanal, 20 V, 460 mA, 0.5 ohm, SOT-523, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20 rohsCompliant: YES Dauer-Drainstrom Id: 460 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Verlustleistung Pd: 270 Gate-Source-Schwellenspannung, max.: 1 euEccn: NLR Verlustleistung: 270 Bauform - Transistor: SOT-523 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3 Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.5 Rds(on)-Prüfspannung: 4.5 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.5 SVHC: No SVHC (17-Jan-2023) | auf Bestellung 117153 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1013T-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.46A 3-Pin SOT-523 T/R | auf Bestellung 918000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013T-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.46A 3-Pin SOT-523 T/R | auf Bestellung 807000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013T-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.46A 3-Pin SOT-523 T/R | auf Bestellung 279000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013T-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 460MA SOT523 Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 460mA (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 350mA, 4.5V Power Dissipation (Max): 270mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.622 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V | auf Bestellung 822000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1013T-7 | Diodes Inc | Trans MOSFET P-CH 20V 0.46A 3-Pin SOT-523 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1013T-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.46A 3-Pin SOT-523 T/R | auf Bestellung 898 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013T-7 PA1. | DIODES/ZETEX | P-MOSFET 20V 460mA 270mW 700mΩ DMG1013T-7 Diodes TDMG1013T-7 Anzahl je Verpackung: 100 Stücke | auf Bestellung 2580 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1013T-7 PA1. | DIODES/ZETEX | P-MOSFET 20V 460mA 270mW 700mΩ DMG1013T-7 Diodes TDMG1013T-7 Anzahl je Verpackung: 100 Stücke | auf Bestellung 5500 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1013T-7 PA1. | DIODES/ZETEX | P-MOSFET 20V 460mA 270mW 700mΩ DMG1013T-7 Diodes TDMG1013T-7 Anzahl je Verpackung: 100 Stücke | auf Bestellung 420 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1013T-7 PA1. | DIODES/ZETEX | P-MOSFET 20V 460mA 270mW 700mΩ DMG1013T-7 Diodes TDMG1013T-7 Anzahl je Verpackung: 100 Stücke | auf Bestellung 6000 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1013TQ-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 460MA SOT523 Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 460mA (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 350mA, 4.5V Power Dissipation (Max): 270mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.58 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1013TQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -330mA; Idm: -6A; 270mW Case: SOT523 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -0.33A On-state resistance: 1.3Ω Type of transistor: P-MOSFET Power dissipation: 0.27W Polarisation: unipolar Gate charge: 580pC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -6A | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1013TQ-7 | Diodes Zetex | 20V P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1013TQ-7 | DIODES INC. | Description: DIODES INC. - DMG1013TQ-7 - Leistungs-MOSFET, p-Kanal, 20 V, 460 mA, 0.5 ohm, SOT-523, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20 rohsCompliant: YES Dauer-Drainstrom Id: 460 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Verlustleistung Pd: 270 Gate-Source-Schwellenspannung, max.: 1 euEccn: NLR Verlustleistung: 270 Bauform - Transistor: SOT-523 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3 Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.5 Rds(on)-Prüfspannung: 4.5 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.5 SVHC: No SVHC (17-Jan-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1013TQ-7 | Diodes Inc | 20V P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1013TQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V SOT523 T&R 3K | auf Bestellung 222776 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG1013TQ-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 460MA SOT523 Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 460mA (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 350mA, 4.5V Power Dissipation (Max): 270mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.58 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1013TQ-7 | DIODES INC. | Description: DIODES INC. - DMG1013TQ-7 - Leistungs-MOSFET, p-Kanal, 20 V, 460 mA, 0.5 ohm, SOT-523, Oberflächenmontage tariffCode: 85411000 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Verlustleistung: 270 Kanaltyp: p-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.5 rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 SVHC: No SVHC (17-Jan-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1013TQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -330mA; Idm: -6A; 270mW Case: SOT523 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -0.33A On-state resistance: 1.3Ω Type of transistor: P-MOSFET Power dissipation: 0.27W Polarisation: unipolar Gate charge: 580pC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -6A Anzahl je Verpackung: 10 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1013UW-7 | DIODES INC. | Description: DIODES INC. - DMG1013UW-7 - Leistungs-MOSFET, AEC-Q101, p-Kanal, 20 V, 820 mA, 0.5 ohm, SOT-323, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 820mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 310mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.5ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 41880 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1013UW-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.82A 3-Pin SOT-323 T/R | auf Bestellung 93000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013UW-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323 Case: SOT323 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -540mA On-state resistance: 1.5Ω Type of transistor: P-MOSFET Power dissipation: 0.31W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±6V Anzahl je Verpackung: 5 Stücke | auf Bestellung 33380 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1013UW-7 | Diodes Inc | Trans MOSFET P-CH 20V 0.82A 3-Pin SOT-323 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1013UW-7 | Diodes Incorporated | MOSFET P-Ch -20V VDSS Enchanced Mosfet | auf Bestellung 64910 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG1013UW-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.82A 3-Pin SOT-323 T/R | auf Bestellung 3354000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013UW-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 820MA SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 820mA (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.622 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V | auf Bestellung 2024940 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1013UW-7 | DIODES/ZETEX | Transistor P-MOSFET; 20V; 6V; 1,5Ohm; 820mA; 310mW; -55°C~150°C; DMG1013UW-7 TDMG1013UW-7 Diodes Anzahl je Verpackung: 100 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1013UW-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.82A 3-Pin SOT-323 T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013UW-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.82A 3-Pin SOT-323 T/R | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1013UW-7 | Diodes Incorporated | MOSFET P-CH 20V 820MA SOT323 | auf Bestellung 837 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1013UW-7 | DIODES INC. | Description: DIODES INC. - DMG1013UW-7 - Leistungs-MOSFET, AEC-Q101, p-Kanal, 20 V, 820 mA, 0.5 ohm, SOT-323, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 820mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 310mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.5ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 41880 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1013UW-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.82A 3-Pin SOT-323 T/R | auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013UW-7 | DIODES/ZETEX | Transistor P-MOSFET; 20V; 6V; 1,5Ohm; 820mA; 310mW; -55°C~150°C; DMG1013UW-7 TDMG1013UW-7 Diodes Anzahl je Verpackung: 100 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1013UW-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323 Case: SOT323 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -540mA On-state resistance: 1.5Ω Type of transistor: P-MOSFET Power dissipation: 0.31W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±6V | auf Bestellung 33380 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013UW-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.82A 3-Pin SOT-323 T/R | auf Bestellung 93000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013UW-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.82A 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1013UW-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 820MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 820mA (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.622 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V | auf Bestellung 2025071 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1013UWQ-13 | Diodes Zetex | Trans MOSFET P-CH 20V 0.82A Automotive 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1013UWQ-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 820MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 820mA (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 37990 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1013UWQ-13 | DIODES INC. | Description: DIODES INC. - DMG1013UWQ-13 - Leistungs-MOSFET, p-Kanal, 20 V, 820 mA, 0.5 ohm, SOT-323, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 820mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 310mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.5ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 9250 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1013UWQ-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -540mA; Idm: -3A; 310mW Case: SOT323 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -540mA On-state resistance: 1.5Ω Type of transistor: P-MOSFET Power dissipation: 0.31W Polarisation: unipolar Gate charge: 622.4pC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -3A | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1013UWQ-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 820MA SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 820mA (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1013UWQ-13 | Diodes Inc | Trans MOSFET P-CH 20V 0.82A Automotive 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1013UWQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: | auf Bestellung 29970 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG1013UWQ-13 | DIODES INC. | Description: DIODES INC. - DMG1013UWQ-13 - Leistungs-MOSFET, p-Kanal, 20 V, 820 mA, 0.5 ohm, SOT-323, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 820mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 310mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.5ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 9250 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1013UWQ-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -540mA; Idm: -3A; 310mW Case: SOT323 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -540mA On-state resistance: 1.5Ω Type of transistor: P-MOSFET Power dissipation: 0.31W Polarisation: unipolar Gate charge: 622.4pC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -3A Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1013UWQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323 Case: SOT323 Mounting: SMD Kind of package: reel; tape Application: automotive industry Drain-source voltage: -20V Drain current: -540mA On-state resistance: 1.5Ω Type of transistor: P-MOSFET Power dissipation: 0.31W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±6V | auf Bestellung 6290 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013UWQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.82A Automotive 3-Pin SOT-323 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013UWQ-7 | DIODES INC. | Description: DIODES INC. - DMG1013UWQ-7 - Leistungs-MOSFET, p-Kanal, 20 V, 820 mA, 0.5 ohm, SOT-323, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 820mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 310mW Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 310mW Bauform - Transistor: SOT-323 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.5ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.5ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 5599 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1013UWQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.82A Automotive 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1013UWQ-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 820MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 820mA (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V Qualification: AEC-Q101 | auf Bestellung 1154062 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1013UWQ-7 | Diodes Inc | Trans MOSFET P-CH 20V 0.82A Automotive 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1013UWQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: | auf Bestellung 22594 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG1013UWQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.82A Automotive 3-Pin SOT-323 T/R | auf Bestellung 264000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013UWQ-7 | DIODES INC. | Description: DIODES INC. - DMG1013UWQ-7 - Leistungs-MOSFET, p-Kanal, 20 V, 820 mA, 0.5 ohm, SOT-323, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 820mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 310mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.5ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 5599 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1013UWQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323 Case: SOT323 Mounting: SMD Kind of package: reel; tape Application: automotive industry Drain-source voltage: -20V Drain current: -540mA On-state resistance: 1.5Ω Type of transistor: P-MOSFET Power dissipation: 0.31W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±6V Anzahl je Verpackung: 5 Stücke | auf Bestellung 6290 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1013UWQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.82A Automotive 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1013UWQ-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 820MA SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 820mA (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1149000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1013UWQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.82A Automotive 3-Pin SOT-323 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013UWQ-7-52 | Diodes Zetex | Trans MOSFET P-CH 20V 0.82A Automotive 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1013UWQ-7-52 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT323 T&R Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 820mA (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Power Dissipation (Max): 310mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1016UDW-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 1.066A/0.845A 6-Pin SOT-363 T/R | auf Bestellung 207000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016UDW-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 330mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.07A, 845mA Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 10V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active | auf Bestellung 114001 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1016UDW-7 | auf Bestellung 55000 Stücke: Lieferzeit 18-25 Tag (e) | |||||||||||||||||||||
| DMG1016UDW-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 1.066A/0.845A 6-Pin SOT-363 T/R | auf Bestellung 261000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016UDW-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 1.066A/0.845A 6-Pin SOT-363 T/R | auf Bestellung 2200 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016UDW-7 | DIODES INC. | Description: DIODES INC. - DMG1016UDW-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 845 mA, 845 mA, 0.3 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 845mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 20V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 845mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.3ohm Verlustleistung, p-Kanal: 330mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.3ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 330mW Betriebstemperatur, max.: 150°C | auf Bestellung 16090 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1016UDW-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 1.066A/0.845A 6-Pin SOT-363 T/R | auf Bestellung 2200 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016UDW-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 330mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.07A, 845mA Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 10V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active | auf Bestellung 108000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1016UDW-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 1.066A/0.845A 6-Pin SOT-363 T/R | auf Bestellung 261000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016UDW-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Case: SOT363 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20/-20V Drain current: 0.85/-1.07A On-state resistance: 0.45/0.75Ω Type of transistor: N/P-MOSFET Power dissipation: 0.53W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of transistor: complementary pair Kind of channel: enhanced Gate-source voltage: ±6V | auf Bestellung 2315 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016UDW-7 | DIODES INC. | Description: DIODES INC. - DMG1016UDW-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 845 mA, 845 mA, 0.3 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 845mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 20V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 845mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.3ohm Verlustleistung, p-Kanal: 330mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.3ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 330mW Betriebstemperatur, max.: 150°C | auf Bestellung 16090 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1016UDW-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Case: SOT363 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20/-20V Drain current: 0.85/-1.07A On-state resistance: 0.45/0.75Ω Type of transistor: N/P-MOSFET Power dissipation: 0.53W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of transistor: complementary pair Kind of channel: enhanced Gate-source voltage: ±6V Anzahl je Verpackung: 5 Stücke | auf Bestellung 2315 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1016UDW-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 1.066A/0.845A 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1016UDW-7 | Diodes Inc | Trans MOSFET N/P-CH 20V 1.066A/0.845A 6-Pin SOT-363 T/R | auf Bestellung 207000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1016UDW-7 | Diodes Incorporated | MOSFET 20V Vdss 6V VGSS Complementary Pair | auf Bestellung 223825 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG1016UDWQ-7 | Diodes Inc | Trans MOSFET N/P-CH 20V 1.066A/0.845A Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1016UDWQ-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.69/-0.548A; Idm: 3.2A Case: SOT363 Mounting: SMD Kind of package: reel; tape Application: automotive industry Drain-source voltage: 20/-20V Drain current: 0.69/-0.548A On-state resistance: 0.45Ω Type of transistor: N/P-MOSFET Power dissipation: 0.33W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: 3.2A | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1016UDWQ-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.69/-0.548A; Idm: 3.2A Case: SOT363 Mounting: SMD Kind of package: reel; tape Application: automotive industry Drain-source voltage: 20/-20V Drain current: 0.69/-0.548A On-state resistance: 0.45Ω Type of transistor: N/P-MOSFET Power dissipation: 0.33W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: 3.2A Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1016UDWQ-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 1.066A/0.845A Automotive 6-Pin SOT-363 T/R | auf Bestellung 414000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016UDWQ-7 | Diodes Inc | Trans MOSFET N/P-CH 20V 1.066A/0.845A Automotive 6-Pin SOT-363 T/R | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1016UDWQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V SOT363 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1016UDWQ-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 1.066A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 330mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.066A (Ta), 845mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 10V, 59.76pF @ 16V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 736.6nC @ 4.5V, 0.62nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 372000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1016UDWQ-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 1.066A/0.845A Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1016UDWQ-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 1.066A/0.845A Automotive 6-Pin SOT-363 T/R | auf Bestellung 414000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016V-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016V-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016V-7 | Diodes Incorporated | MOSFET MOSFET N-CHANNEL P-CHANNEL SOT-563 | auf Bestellung 323551 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG1016V-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R | auf Bestellung 96000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016V-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 0.87A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 78195 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1016V-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016V-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R | auf Bestellung 1035 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016V-7 | DIODES INC. | Description: DIODES INC. - DMG1016V-7 - Dual-MOSFET, AEC-Q101, Komplementärer n- und p-Kanal, 20 V, 20 V, 870 mA, 870 mA, 0.3 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 870 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 20 usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 870 Drain-Source-Durchgangswiderstand, p-Kanal: 0.3 Verlustleistung, p-Kanal: 530 Drain-Source-Spannung Vds, n-Kanal: 20 euEccn: NLR Drain-Source-Durchgangswiderstand, n-Kanal: 0.3 productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 530 SVHC: No SVHC (17-Jan-2023) | auf Bestellung 4885 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1016V-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R | auf Bestellung 96000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016V-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016V-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R | auf Bestellung 1035 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016V-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016V-7 | Diodes Inc | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1016V-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016V-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.63/-0.46A; 0.53W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 0.63/-0.46A Power dissipation: 0.53W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 0.4/0.7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | auf Bestellung 2674 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016V-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 0.87A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 72000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1016V-7 | DIODES INC. | Description: DIODES INC. - DMG1016V-7 - Dual-MOSFET, AEC-Q101, Komplementärer n- und p-Kanal, 20 V, 20 V, 870 mA, 870 mA, 0.3 ohm tariffCode: 85412100 Wandlerpolarität: Komplementärer n- und p-Kanal Betriebstemperatur, max.: 150 productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand, p-Kanal: 0.3 Anzahl der Pins: 6 Dauer-Drainstrom Id, p-Kanal: 870 Dauer-Drainstrom Id, n-Kanal: 870 MSL: MSL 1 - unbegrenzt hazardous: false Kanaltyp: Komplementärer n- und p-Kanal Rds(on)-Prüfspannung: 4.5 Produktpalette: - Bauform - Transistor: SOT-563 Gate-Source-Schwellenspannung, max.: 1 euEccn: NLR rohsCompliant: YES Verlustleistung, n-Kanal: 530 Drain-Source-Spannung Vds: 20 Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 20 Verlustleistung, p-Kanal: 530 Drain-Source-Spannung Vds, n-Kanal: 20 Drain-Source-Durchgangswiderstand, n-Kanal: 0.3 Dauer-Drainstrom Id: 870 rohsPhthalatesCompliant: YES Betriebswiderstand, Rds(on): 0.3 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 usEccn: EAR99 Transistormontage: Oberflächenmontage Verlustleistung Pd: 530 SVHC: No SVHC (17-Jan-2023) | auf Bestellung 4885 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1016V-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016V-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.63/-0.46A; 0.53W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 0.63/-0.46A Power dissipation: 0.53W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 0.4/0.7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke | auf Bestellung 2674 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1016V-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R | auf Bestellung 195000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016VQ-13 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A Automotive 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1016VQ-13 | Diodes Inc | Trans MOSFET N/P-CH 20V 0.87A/0.64A Automotive 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1016VQ-13 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 630/-460mA; 530mW Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 0.63/-0.46A Power dissipation: 0.53W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 700mΩ/1.3Ω Mounting: SMD Gate charge: 736.6/622.4pC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1016VQ-13 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 0.87A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1016VQ-13 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 630/-460mA; 530mW Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 0.63/-0.46A Power dissipation: 0.53W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 700mΩ/1.3Ω Mounting: SMD Gate charge: 736.6/622.4pC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1016VQ-13 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A Automotive 6-Pin SOT-563 T/R | auf Bestellung 70000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016VQ-13 | Diodes Incorporated | MOSFET Comp Pair Enh FET 20Vdss 6Vgss | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1016VQ-13-52 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT563 T&R Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 870mA (Ta), 640mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V, 59.76pF @ 16V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 736.6nC @ 4.5V, 0.62nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1016VQ-13-52 | Diodes Zetex | Trans MOSFET N/P-Ch | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1016VQ-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 0.087/-0.064A Power dissipation: 0.53W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 0.4/0.7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1016VQ-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1016VQ-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 0.087/-0.064A Power dissipation: 0.53W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 0.4/0.7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1016VQ-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 0.87A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 191455 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1016VQ-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R Automotive AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016VQ-7 | Diodes Incorporated | MOSFET Comp Pair Enh FET 20Vdss 6Vgss | auf Bestellung 11876 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG1016VQ-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A Automotive 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1016VQ-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 0.87A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 189000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1016VQ-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R Automotive AEC-Q101 | auf Bestellung 195000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016VQ-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R Automotive AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1016VQ-7 | Diodes Inc | Trans MOSFET N/P-CH 20V 0.87A/0.64A Automotive 6-Pin SOT-563 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1023UV-13 | Diodes Zetex | Trans MOSFET P-CH 20V 1.03A 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1023UV-7 | Diodes Zetex | Trans MOSFET P-CH 20V 1.03A 6-Pin SOT-563 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1023UV-7 | Diodes Zetex | Trans MOSFET P-CH 20V 1.03A 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1023UV-7 | Diodes Zetex | Trans MOSFET P-CH 20V 1.03A 6-Pin SOT-563 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1023UV-7 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 1.03A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A Input Capacitance (Ciss) (Max) @ Vds: 59.76pF @ 16V Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 1582246 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1023UV-7 | Diodes Inc | Trans MOSFET P-CH 20V 1.03A 6-Pin SOT-563 T/R | auf Bestellung 17999 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1023UV-7 | Diodes Zetex | Trans MOSFET P-CH 20V 1.03A 6-Pin SOT-563 T/R | auf Bestellung 1883 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1023UV-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.68A; 0.53W; SOT563 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.68A Power dissipation: 0.53W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 25Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1023UV-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.68A; 0.53W; SOT563 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.68A Power dissipation: 0.53W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 25Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke | auf Bestellung 2990 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1023UV-7 | Diodes Zetex | Trans MOSFET P-CH 20V 1.03A 6-Pin SOT-563 T/R | auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1023UV-7 | Diodes Zetex | Trans MOSFET P-CH 20V 1.03A 6-Pin SOT-563 T/R | auf Bestellung 1883 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1023UV-7 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 1.03A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A Input Capacitance (Ciss) (Max) @ Vds: 59.76pF @ 16V Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 1566000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1023UV-7 | Diodes Incorporated | MOSFET MOSFET P-CHANNEL | auf Bestellung 26148 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG1023UV-7 | Diodes Zetex | Trans MOSFET P-CH 20V 1.03A 6-Pin SOT-563 T/R | auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1023UV-7-52 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT563 T&R Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 59.76pF @ 16V Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6224nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1023UV-7-52 | Diodes Zetex | Dual P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1023UVQ-13 | Diodes Zetex | High Enhancement Mode MOSFET | auf Bestellung 120000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1023UVQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1023UVQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V-24V SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 59pF @ 16V Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.622nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 120000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1023UVQ-13 | Diodes Zetex | High Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1023UVQ-7 | Diodes Inc | High Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1023UVQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1023UVQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V-24V SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 59pF @ 16V Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.622nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 1317000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1023UVQ-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -3A; 530mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.68A Pulsed drain current: -3A Power dissipation: 0.53W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 25Ω Mounting: SMD Gate charge: 622pC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1023UVQ-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -3A; 530mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.68A Pulsed drain current: -3A Power dissipation: 0.53W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 25Ω Mounting: SMD Gate charge: 622pC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1023UVQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V-24V SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 59pF @ 16V Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.622nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 1319960 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1024UV-7 | Diodes Zetex | Trans MOSFET N-CH 20V 1.38A 6-Pin SOT-563 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1024UV-7 | Diodes Zetex | Trans MOSFET N-CH 20V 1.38A 6-Pin SOT-563 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1024UV-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 1.38A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.38A Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 939000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1024UV-7 | Diodes Inc | Trans MOSFET N-CH 20V 1.38A 6-Pin SOT-563 T/R | auf Bestellung 63000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1024UV-7 | Diodes Zetex | Trans MOSFET N-CH 20V 1.38A 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1024UV-7 | Diodes Incorporated | MOSFET MOSFET N-CHANNEL | auf Bestellung 44313 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG1024UV-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.89A; 0.53W; SOT563 Case: SOT563 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.89A On-state resistance: 0.45Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.53W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±6V | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1024UV-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.89A; 0.53W; SOT563 Case: SOT563 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.89A On-state resistance: 0.45Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.53W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±6V Anzahl je Verpackung: 10 Stücke | auf Bestellung 2500 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1024UV-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 1.38A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.38A Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 945000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1026UV-7 | DIODES INC. | Description: DIODES INC. - DMG1026UV-7 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 410 mA, 410 mA, 1.2 ohm tariffCode: 85412900 Wandlerpolarität: n-Kanal Betriebstemperatur, max.: 150 productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand, p-Kanal: 1.2 Anzahl der Pins: 6 Dauer-Drainstrom Id, p-Kanal: 410 Dauer-Drainstrom Id, n-Kanal: 410 MSL: MSL 1 - unbegrenzt hazardous: false Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10 Produktpalette: - Bauform - Transistor: SOT-563 Gate-Source-Schwellenspannung, max.: 1.8 euEccn: NLR rohsCompliant: YES Verlustleistung, n-Kanal: 580 Drain-Source-Spannung Vds: 60 Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 60 Verlustleistung, p-Kanal: 580 Drain-Source-Spannung Vds, n-Kanal: 60 Drain-Source-Durchgangswiderstand, n-Kanal: 1.2 Dauer-Drainstrom Id: 410 rohsPhthalatesCompliant: YES Betriebswiderstand, Rds(on): 1.2 Qualifizierungsstandard der Automobilindustrie: - usEccn: EAR99 Transistormontage: Oberflächenmontage Verlustleistung Pd: 580 SVHC: No SVHC (17-Jan-2023) | auf Bestellung 2435 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1026UV-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.41A 6-Pin SOT-563 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1026UV-7 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.41A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 580mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 410mA Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 588977 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1026UV-7 | Diodes Inc | Trans MOSFET N-CH 60V 0.41A 6-Pin SOT-563 T/R | auf Bestellung 65003 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1026UV-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 1V-60V,SOT563,3K | auf Bestellung 164166 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG1026UV-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; Idm: 1A; 0.58W; SOT563 Case: SOT563 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 60V Drain current: 0.3A On-state resistance: 1.8Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.58W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1A | auf Bestellung 3723 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1026UV-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; Idm: 1A; 0.58W; SOT563 Case: SOT563 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 60V Drain current: 0.3A On-state resistance: 1.8Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.58W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1A Anzahl je Verpackung: 5 Stücke | auf Bestellung 3723 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG1026UV-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.41A 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1026UV-7 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.41A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 580mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 410mA Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 588000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1026UV-7 | DIODES INC. | Description: DIODES INC. - DMG1026UV-7 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 410 mA, 410 mA, 1.2 ohm tariffCode: 85412900 Wandlerpolarität: n-Kanal Betriebstemperatur, max.: 150 productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand, p-Kanal: 1.2 Anzahl der Pins: 6 Dauer-Drainstrom Id, p-Kanal: 410 Dauer-Drainstrom Id, n-Kanal: 410 MSL: MSL 1 - unbegrenzt hazardous: false Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10 Produktpalette: - Bauform - Transistor: SOT-563 Gate-Source-Schwellenspannung, max.: 1.8 euEccn: NLR rohsCompliant: YES Verlustleistung, n-Kanal: 580 Drain-Source-Spannung Vds: 60 Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 60 Verlustleistung, p-Kanal: 580 Drain-Source-Spannung Vds, n-Kanal: 60 Drain-Source-Durchgangswiderstand, n-Kanal: 1.2 Dauer-Drainstrom Id: 410 rohsPhthalatesCompliant: YES Betriebswiderstand, Rds(on): 1.2 Qualifizierungsstandard der Automobilindustrie: - usEccn: EAR99 Transistormontage: Oberflächenmontage Verlustleistung Pd: 580 SVHC: No SVHC (17-Jan-2023) | auf Bestellung 2435 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1026UV-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.41A 6-Pin SOT-563 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1026UV-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.41A 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1026UVQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 320mA; Idm: 1A; 650mW; SOT563 Case: SOT563 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 60V Drain current: 0.32A On-state resistance: 2.1Ω Type of transistor: N-MOSFET Power dissipation: 0.65W Polarisation: unipolar Gate charge: 0.45pC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1026UVQ-7 | Diodes Incorporated | Description: MOSFET 2 N-CH 60V 440MA SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 650mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 440mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.45pC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1026UVQ-7 | Diodes Inc | Trans MOSFET N-CH 60V 0.41A Automotive 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1026UVQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: | auf Bestellung 3069 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG1026UVQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 320mA; Idm: 1A; 650mW; SOT563 Case: SOT563 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 60V Drain current: 0.32A On-state resistance: 2.1Ω Type of transistor: N-MOSFET Power dissipation: 0.65W Polarisation: unipolar Gate charge: 0.45pC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1A | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1029SV-7 | Diodes Zetex | Trans MOSFET N/P-CH 60V 0.5A/0.36A 6-Pin SOT-563 T/R | auf Bestellung 144000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1029SV-7 | DIODES INC. | Description: DIODES INC. - DMG1029SV-7 - Dual-MOSFET, AEC-Q101, Komplementärer n- und p-Kanal, 60 V, 60 V, 500 mA, 500 mA, 1.3 ohm tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 500mA Dauer-Drainstrom Id, p-Kanal: 500mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 500mA Drain-Source-Durchgangswiderstand, p-Kanal: 1.3ohm Verlustleistung Pd: 450mW Gate-Source-Schwellenspannung, max.: 2.5V Verlustleistung, p-Kanal: 450mW Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOT-563 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 1.3ohm productTraceability: Yes-Date/Lot Code Wandlerpolarität: Komplementärer n- und p-Kanal Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 450mW Betriebswiderstand, Rds(on): 1.3ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) | auf Bestellung 10670 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1029SV-7 | Diodes Zetex | Trans MOSFET N/P-CH 60V 0.5A/0.36A 6-Pin SOT-563 T/R | auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1029SV-7 | Diodes Zetex | Trans MOSFET N/P-CH 60V 0.5A/0.36A 6-Pin SOT-563 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1029SV-7 | Diodes Incorporated | Description: MOSFET N/P-CH 60V 0.5A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA, 360mA Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 777000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1029SV-7 | Diodes Inc | Trans MOSFET N/P-CH 60V 0.5A/0.36A 6-Pin SOT-563 T/R | auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1029SV-7 | Diodes Zetex | Trans MOSFET N/P-CH 60V 0.5A/0.36A 6-Pin SOT-563 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1029SV-7 | Diodes Incorporated | MOSFET 60V Comp Pair ENH 1.7 Ohm 10V 500mA | auf Bestellung 249458 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG1029SV-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Case: SOT563 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 60/-60V Drain current: 0.4/-0.28A On-state resistance: 1.7/4Ω Type of transistor: N/P-MOSFET Power dissipation: 0.66W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of transistor: complementary pair Kind of channel: enhanced Gate-source voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1029SV-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Case: SOT563 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 60/-60V Drain current: 0.4/-0.28A On-state resistance: 1.7/4Ω Type of transistor: N/P-MOSFET Power dissipation: 0.66W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of transistor: complementary pair Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1029SV-7 | Diodes Zetex | Trans MOSFET N/P-CH 60V 0.5A/0.36A 6-Pin SOT-563 T/R | auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1029SV-7 | Diodes Zetex | Trans MOSFET N/P-CH 60V 0.5A/0.36A 6-Pin SOT-563 T/R | auf Bestellung 144000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1029SV-7 | Diodes Incorporated | Description: MOSFET N/P-CH 60V 0.5A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA, 360mA Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 780388 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1029SV-7-50 | Diodes Incorporated | Description: 2N7002 Family SOT563 T&R 3K Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V, 0.28nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1029SV-7-50 | Diodes Zetex | Trans MOSFET N/P-CH 60V 0.5A/0.36A 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1029SV-7-52 | Diodes Incorporated | Description: 2N7002 Family SOT563 T&R 3K Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V, 0.28nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1029SV-7-52 | Diodes Zetex | Trans MOSFET N/P-CH 60V 0.5A/0.36A 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1029SVQ-7 | Diodes Zetex | Trans MOSFET N/P-CH 60V 0.5A/0.36A Automotive 6-Pin SOT-563 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1029SVQ-7 | Diodes Inc | Trans MOSFET N/P-CH 60V 0.5A/0.36A Automotive 6-Pin SOT-563 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG1029SVQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V~60V SOT563 T&R 3K | auf Bestellung 131843 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG1029SVQ-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Case: SOT563 Mounting: SMD Kind of package: reel; tape Application: automotive industry Drain-source voltage: 60/-60V Drain current: 0.4/-0.28A On-state resistance: 1.7/4Ω Type of transistor: N/P-MOSFET Power dissipation: 0.66W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of transistor: complementary pair Kind of channel: enhanced Gate-source voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1029SVQ-7 | Diodes Zetex | Trans MOSFET N/P-CH 60V 0.5A/0.36A Automotive 6-Pin SOT-563 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1029SVQ-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Case: SOT563 Mounting: SMD Kind of package: reel; tape Application: automotive industry Drain-source voltage: 60/-60V Drain current: 0.4/-0.28A On-state resistance: 1.7/4Ω Type of transistor: N/P-MOSFET Power dissipation: 0.66W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of transistor: complementary pair Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1029SVQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 41V~60V SOT563 T&R Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V, 0.28nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 170770 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1029SVQ-7 | Diodes Zetex | Trans MOSFET N/P-CH 60V 0.5A/0.36A Automotive 6-Pin SOT-563 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1029SVQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 41V~60V SOT563 T&R Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V, 0.28nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 168000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1029SVQ-7 | Diodes Zetex | Trans MOSFET N/P-CH 60V 0.5A/0.36A Automotive 6-Pin SOT-563 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1029SVQ-7-52 | Diodes Zetex | Trans MOSFET N/P-CH 60V 0.5A/0.36A Automotive 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1029SVQ-7-52 | Diodes Incorporated | Description: MOSFET BVDSS: 41V~60V SOT563 T&R Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V, 0.28nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG10N60SCT | Diodes Zetex | N-CHANNEL ENHANCEMENT MODE MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG10N60SCT | Diodes Incorporated | Description: MOSFET N-CH 600V 12A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB (Type TH) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1587 pF @ 16 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG10N60SCT | Diodes Inc | Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG10N60SCT | DIODES INCORPORATED | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 15A; 71W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.9A Pulsed drain current: 15A Power dissipation: 71W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG10N60SCT | DIODES INCORPORATED | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 15A; 71W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.9A Pulsed drain current: 15A Power dissipation: 71W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG1553-5 | iNRCORE, LLC | Description: TRANSFORMER PBC Packaging: Tube Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG16 Servo-Motor mit Metall Reduzierer Produktcode: 39985 | HEXTRONIX | Modulare Elemente > Motoren Beschreibung: Servo-Motor mit Metall Reduzierer. • Gewicht: 18,8 g; Typ: Servo- | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG200 | LOVATO ELECTRIC | Category: Power Network Meters and Analyzers Description: Meter: network parameters; for DIN rail mounting; LCD; 128x80 IP rating: IP20 at terminal side; IP40 (from the front) Manufacturer series: DMG Kind of network: three-phase Illumination: yes Display resolution: 128x80 Type of meter: network parameters True effective value measurement: True RMS Measurement: AC current; active power; AC voltage; apparent power; energy; frequency; harmonics; power factor; reactive power Kind of meter: digital; mounting Dimensions (W x H x D): 71.6x90x63mm Kind of measurement: indirect with 5A current transformer AC current measuring range: 10mA...6A AC voltage measuring range: 10...480V Frequency measuring range: 45...65Hz AC current measuring accuracy: ±0.5% AC voltage measuring accuracy: ±0.5% Active power measuring accuracy: ±1% Mounting: for DIN rail mounting Kind of display used: LCD | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG200 | LOVATO ELECTRIC | Category: Power Network Meters and Analyzers Description: Meter: network parameters; for DIN rail mounting; LCD; 128x80 IP rating: IP20 at terminal side; IP40 (from the front) Manufacturer series: DMG Kind of network: three-phase Illumination: yes Display resolution: 128x80 Type of meter: network parameters True effective value measurement: True RMS Measurement: AC current; active power; AC voltage; apparent power; energy; frequency; harmonics; power factor; reactive power Kind of meter: digital; mounting Dimensions (W x H x D): 71.6x90x63mm Kind of measurement: indirect with 5A current transformer AC current measuring range: 10mA...6A AC voltage measuring range: 10...480V Frequency measuring range: 45...65Hz AC current measuring accuracy: ±0.5% AC voltage measuring accuracy: ±0.5% Active power measuring accuracy: ±1% Mounting: for DIN rail mounting Kind of display used: LCD Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG201020R | Panasonic Electronic Components | Description: TRANS NPN PNP 50V MINI5-G3-B Packaging: Tape & Reel (TR) Voltage - Rated: 50V Package / Case: SC-74A, SOT-753 Current Rating (Amps): 500mA Mounting Type: Surface Mount Transistor Type: NPN + PNP (Emitter Coupled) Applications: General Amplification Supplier Device Package: Mini5-G3-B | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG201020R | Panasonic | Bipolar Transistors - BJT Composite Transistor | auf Bestellung 3000 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
| DMG204010R | PANASONIC | SOT26/SOT363 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| DMG204010R | Panasonic Electronic Components | Description: TRANS NPN/PNP 50V 0.1A MINI6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V Frequency - Transition: 150MHz Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG204010R | Panasonic | Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | auf Bestellung 9319 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
| DMG204020R | Panasonic Electronic Components | Description: TRANS NPN/PNP 50V 0.5A MINI6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V Frequency - Transition: 160MHz, 130MHz Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG204020R | Panasonic | Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | auf Bestellung 1570 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
| DMG204A00R | Panasonic Electronic Components | Description: TRANS NPN/PNP 20V/10V 0.5A MINI6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 20V, 10V Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA / 300mV @ 8mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V / 130 @ 500mA, 2V Frequency - Transition: 150MHZ, 250MHz Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG204A00R | Panasonic | Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG204B00R | Panasonic Electronic Components | Description: TRANS NPN/PNP 50V/10V MINI6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 10V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 300mV @ 8mA, 400mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V / 130 @ 500mA, 2V Frequency - Transition: 150MHZ, 250MHz Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG204B00R | Panasonic | Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG204B10R | Panasonic Electronic Components | Description: TRANS NPN/PNP 20V/50V MINI6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 500mA, 100mA Voltage - Collector Emitter Breakdown (Max): 20V, 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA / 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V / 210 @ 2mA, 10V Frequency - Transition: 150MHz Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG204B10R | Panasonic | Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | auf Bestellung 524 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
| DMG210 | LOVATO ELECTRIC | Category: Power Network Meters and Analyzers Description: Meter: network parameters; for DIN rail mounting; LCD; 128x80 Type of meter: network parameters Kind of measurement: indirect with 5A current transformer Mounting: for DIN rail mounting Kind of meter: digital; mounting Kind of display used: LCD Display resolution: 128x80 Measurement: AC current; active power; AC voltage; apparent power; energy; frequency; harmonics; power factor; reactive power Manufacturer series: DMG Kind of network: three-phase AC voltage measuring range: 10...480V AC current measuring range: 10mA...6A Frequency measuring range: 45...65Hz AC voltage measuring accuracy: ±0.5% AC current measuring accuracy: ±0.5% True effective value measurement: True RMS Interface: RS485 IP rating: IP20 at terminal side; IP40 (from the front) Dimensions (W x H x D): 71.6x90x63mm Illumination: yes Active power measuring accuracy: ±1% Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG210 | LOVATO ELECTRIC | Category: Power Network Meters and Analyzers Description: Meter: network parameters; for DIN rail mounting; LCD; 128x80 Type of meter: network parameters Kind of measurement: indirect with 5A current transformer Mounting: for DIN rail mounting Kind of meter: digital; mounting Kind of display used: LCD Display resolution: 128x80 Measurement: AC current; active power; AC voltage; apparent power; energy; frequency; harmonics; power factor; reactive power Manufacturer series: DMG Kind of network: three-phase AC voltage measuring range: 10...480V AC current measuring range: 10mA...6A Frequency measuring range: 45...65Hz AC voltage measuring accuracy: ±0.5% AC current measuring accuracy: ±0.5% True effective value measurement: True RMS Interface: RS485 IP rating: IP20 at terminal side; IP40 (from the front) Dimensions (W x H x D): 71.6x90x63mm Illumination: yes Active power measuring accuracy: ±1% | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG214010R | Panasonic Electronic Components | Description: TRANS PNP PREBIAS/NPN 0.3W MINI6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 PNP Pre-Biased, 1 NPN Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 500nA, 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V / 210 @ 2mA, 10V Frequency - Transition: 150MHz Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG214010R | Panasonic | Bipolar Transistors - Pre-Biased COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2301L | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2301L-13 | Diodes Zetex | P-CHANNEL ENHANCEMENT MODE MOSFET | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301L-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1A; Idm: -10A; 1.5W; SOT23 Mounting: SMD On-state resistance: 0.15Ω Type of transistor: P-MOSFET Power dissipation: 1.5W Polarisation: unipolar Kind of package: reel; tape Drain current: -1A Drain-source voltage: -20V Gate charge: 5.5nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -10A Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2301L-13 | Diodes Inc | P-CHANNEL ENHANCEMENT MODE MOSFET | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG2301L-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 3A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 10 V | auf Bestellung 196434 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2301L-13 | Diodes Incorporated | MOSFET MOSFET BVDSS | auf Bestellung 19055 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG2301L-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1A; Idm: -10A; 1.5W; SOT23 Mounting: SMD On-state resistance: 0.15Ω Type of transistor: P-MOSFET Power dissipation: 1.5W Polarisation: unipolar Kind of package: reel; tape Drain current: -1A Drain-source voltage: -20V Gate charge: 5.5nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -10A | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2301L-13 | Diodes Zetex | P-CHANNEL ENHANCEMENT MODE MOSFET | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301L-13 | Diodes Zetex | P-CHANNEL ENHANCEMENT MODE MOSFET | auf Bestellung 190000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301L-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 3A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 10 V | auf Bestellung 190000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2301L-7 | DIODES/ZETEX | Single P-Channel 20 V 1.5 W 5.5 nC Silicon Surface Mount Mosfet DMG2301L-7 TDMG2301L Anzahl je Verpackung: 100 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG2301L-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 3A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 10 V | auf Bestellung 228000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2301L-7 | Diodes Incorporated | MOSFET MOSFET BVDSS | auf Bestellung 150213 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG2301L-7 | Diodes Zetex | P-Channel Enhancement Mode MOSFET | auf Bestellung 348000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301L-7 | DIODES/ZETEX | Single P-Channel 20 V 1.5 W 5.5 nC Silicon Surface Mount Mosfet DMG2301L-7 TDMG2301L Anzahl je Verpackung: 100 Stücke | auf Bestellung 1300 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG2301L-7 | Diodes Zetex | P-Channel Enhancement Mode MOSFET | auf Bestellung 348000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301L-7 | Diodes Zetex | P-Channel Enhancement Mode MOSFET | auf Bestellung 1638 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301L-7 | DIODES/ZETEX | Single P-Channel 20 V 1.5 W 5.5 nC Silicon Surface Mount Mosfet DMG2301L-7 TDMG2301L Anzahl je Verpackung: 100 Stücke | auf Bestellung 6000 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG2301L-7 | DIODES INC. | Description: DIODES INC. - DMG2301L-7 - Leistungs-MOSFET, p-Kanal, 20 V, 3 A, 0.12 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Verlustleistung Pd: 1.5W Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 1.5W Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.12ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.12ohm | auf Bestellung 7079 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG2301L-7 | Diodes Zetex | P-Channel Enhancement Mode MOSFET | auf Bestellung 312000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301L-7 | DIODES/ZETEX | Single P-Channel 20 V 1.5 W 5.5 nC Silicon Surface Mount Mosfet DMG2301L-7 TDMG2301L Anzahl je Verpackung: 100 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG2301L-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 3A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 10 V | auf Bestellung 231622 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2301L-7 | Diodes Zetex | P-Channel Enhancement Mode MOSFET | auf Bestellung 1638 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301L-7 | DIODES/ZETEX | Single P-Channel 20 V 1.5 W 5.5 nC Silicon Surface Mount Mosfet DMG2301L-7 TDMG2301L Anzahl je Verpackung: 100 Stücke | auf Bestellung 12000 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG2301L-7 | DIODES INC. | Description: DIODES INC. - DMG2301L-7 - Leistungs-MOSFET, p-Kanal, 20 V, 3 A, 0.12 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 1.5W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.12ohm | auf Bestellung 7079 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG2301L-7 | Diodes Inc | P-Channel Enhancement Mode MOSFET | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG2301L-7 | Diodes Zetex | P-Channel Enhancement Mode MOSFET | auf Bestellung 312000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301L-7-ML | MOSLEADER | Description: P 20V 3A SOT23 Packaging: Tape & Reel (TR) | auf Bestellung 300000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2301LK | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2301LK-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.9A; Idm: -8A; 1.4W; SOT23 Mounting: SMD On-state resistance: 298mΩ Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Drain current: -1.9A Drain-source voltage: -20V Gate charge: 3.4nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -8A | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2301LK-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2301LK-13 | Diodes Inc | Trans MOSFET P-CH 20V 2.4A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2301LK-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.9A; Idm: -8A; 1.4W; SOT23 Mounting: SMD On-state resistance: 298mΩ Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Drain current: -1.9A Drain-source voltage: -20V Gate charge: 3.4nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -8A Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2301LK-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 2.4A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 1A, 4.5V Power Dissipation (Max): 840mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 6 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 90000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2301LK-13 | Diodes Zetex | Trans MOSFET P-CH 20V 2.4A 3-Pin SOT-23 T/R | auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301LK-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 2.4A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 1A, 4.5V Power Dissipation (Max): 840mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 6 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 342368 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2301LK-7 | DIODES INC. | Description: DIODES INC. - DMG2301LK-7 - Leistungs-MOSFET, p-Kanal, 20 V, 2.4 A, 0.136 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 600mV euEccn: NLR Verlustleistung: 840mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.136ohm | auf Bestellung 8635 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG2301LK-7 | Diodes Inc | Trans MOSFET P-CH 20V 2.4A 3-Pin SOT-23 T/R | auf Bestellung 57000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG2301LK-7 | Diodes Zetex | Trans MOSFET P-CH 20V 2.4A 3-Pin SOT-23 T/R | auf Bestellung 231000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301LK-7 | Diodes Zetex | Trans MOSFET P-CH 20V 2.4A 3-Pin SOT-23 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301LK-7 | Diodes Zetex | Trans MOSFET P-CH 20V 2.4A 3-Pin SOT-23 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301LK-7 | DIODES/ZETEX | Trans MOSFET P-CH 20V 2.4A Automotive 3-Pin SOT-23 DMG2301LK-7 TDMG2301LK Anzahl je Verpackung: 100 Stücke | auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG2301LK-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 2.4A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 1A, 4.5V Power Dissipation (Max): 840mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 6 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 339000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2301LK-7 | Diodes Zetex | Trans MOSFET P-CH 20V 2.4A 3-Pin SOT-23 T/R | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301LK-7 | Diodes Zetex | Trans MOSFET P-CH 20V 2.4A 3-Pin SOT-23 T/R | auf Bestellung 2053 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301LK-7 | DIODES INC. | Description: DIODES INC. - DMG2301LK-7 - Leistungs-MOSFET, p-Kanal, 20 V, 2.4 A, 0.136 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 840mW Gate-Source-Schwellenspannung, max.: 600mV euEccn: NLR Verlustleistung: 840mW Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.136ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.136ohm | auf Bestellung 8635 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG2301LK-7 | Diodes Zetex | Trans MOSFET P-CH 20V 2.4A 3-Pin SOT-23 T/R | auf Bestellung 2053 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301LK-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 77907 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG2301LK-7 | Diodes Zetex | Trans MOSFET P-CH 20V 2.4A 3-Pin SOT-23 T/R | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301U-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 2.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 6 V | auf Bestellung 405680 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2301U-7 | Diodes Incorporated | MOSFET MOSFET P-CHANNEL SOT-23 | auf Bestellung 20941 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG2301U-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 2.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 6 V | auf Bestellung 399000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2301U-7 | Diodes Inc | Trans MOSFET P-CH 20V 2.7A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2301U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 2.7A 3-Pin SOT-23 T/R | auf Bestellung 291000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2301U-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.7A; Idm: -27A; 800mW; SOT23 Mounting: SMD On-state resistance: 0.11Ω Type of transistor: P-MOSFET Power dissipation: 0.8W Polarisation: unipolar Kind of package: reel; tape Drain current: -1.7A Drain-source voltage: -20V Gate charge: 6.5nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -27A | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2301U-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.7A; Idm: -27A; 800mW; SOT23 Mounting: SMD On-state resistance: 0.11Ω Type of transistor: P-MOSFET Power dissipation: 0.8W Polarisation: unipolar Kind of package: reel; tape Drain current: -1.7A Drain-source voltage: -20V Gate charge: 6.5nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -27A Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2302U | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2302U-7 | Diodes Inc | Trans MOSFET N-CH 20V 4.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2302U-7 | Diodes Zetex | Trans MOSFET N-CH 20V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 87000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2302U-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 4.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 50µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V | auf Bestellung 426000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2302U-7 | Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 20V N-Chan | auf Bestellung 25294 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
| DMG2302U-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 4.2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 50µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V | auf Bestellung 432081 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2302UK | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2302UK-13 Produktcode: 198291 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
| DMG2302UK-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.2A Pulsed drain current: 12A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2302UK-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 2.8A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 119382 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2302UK-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.2A Pulsed drain current: 12A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2302UK-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 6400 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG2302UK-13 | Diodes Inc | Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2302UK-13 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R | auf Bestellung 110000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2302UK-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 2.8A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 110000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2302UK-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 2.8A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 157975 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2302UK-7 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2302UK-7 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R | auf Bestellung 523 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2302UK-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 0.66W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.2A Pulsed drain current: 12A Power dissipation: 0.66W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 90mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke | auf Bestellung 2995 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG2302UK-7 | DIODES INC. | Description: DIODES INC. - DMG2302UK-7 - Leistungs-MOSFET, n-Kanal, 20 V, 2.8 A, 0.061 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 600mV euEccn: NLR Verlustleistung: 660mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.061ohm | auf Bestellung 25544 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG2302UK-7 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2302UK-7 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2302UK-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 877433 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG2302UK-7 | Diodes Inc | Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG2302UK-7 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2302UK-7 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R | auf Bestellung 243000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2302UK-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 2.8A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 158673 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2302UK-7 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2302UK-7 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R | auf Bestellung 523 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG2302UK-7 | DIODES/ZETEX | Transistor N-MOSFET; 20V; 12V; 120mOhm; 2,8A; 660mW; -55°C ~ 150°C; DMG2302UK-7, DMG2302UK-13; DMG2302UK Diodes TDMG2302uk Anzahl je Verpackung: 100 Stücke | auf Bestellung 280 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG2302UK-7 | DIODES INC. | Description: DIODES INC. - DMG2302UK-7 - Leistungs-MOSFET, n-Kanal, 20 V, 2.8 A, 0.061 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Verlustleistung Pd: 660mW Gate-Source-Schwellenspannung, max.: 600mV euEccn: NLR Verlustleistung: 660mW Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.061ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.061ohm | auf Bestellung 25544 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG2302UK-7 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2302UK-7 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R | auf Bestellung 243000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2302UK-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 0.66W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.2A Pulsed drain current: 12A Power dissipation: 0.66W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 90mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | auf Bestellung 2995 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2302UKQ-13 | Diodes Inc | MOSFET BVDSS: 8V24V SOT23 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2302UKQ-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 2.8A SOT23 T&R 1 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2302UKQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.2A Pulsed drain current: 12A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2302UKQ-13 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2302UKQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.2A Pulsed drain current: 12A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2302UKQ-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 2.8A SOT23 T&R 1 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2302UKQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 5538 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG2302UKQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2302UKQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.2A Pulsed drain current: 12A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2302UKQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2302UKQ-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 2.8A SOT23 T&R 3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 639000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2302UKQ-7 | DIODES INC. | Description: DIODES INC. - DMG2302UKQ-7 - Leistungs-MOSFET, n-Kanal, 20 V, 2.8 A, 0.061 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Verlustleistung Pd: 660mW Gate-Source-Schwellenspannung, max.: 600mV euEccn: NLR Verlustleistung: 660mW Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3Pin(s) Produktpalette: DMG2302UKQ productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.061ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.061ohm | auf Bestellung 4465 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG2302UKQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 168676 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG2302UKQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2302UKQ-7 | Diodes Inc | Trans MOSFET N-CH 20V 2.8A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2302UKQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 2.8A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2302UKQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.2A Pulsed drain current: 12A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2302UKQ-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 2.8A SOT23 T&R 3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 642154 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2302UKQ-7 | DIODES INC. | Description: DIODES INC. - DMG2302UKQ-7 - Leistungs-MOSFET, n-Kanal, 20 V, 2.8 A, 0.061 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 600mV euEccn: NLR Verlustleistung: 660mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: DMG2302UKQ productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.061ohm | auf Bestellung 4465 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG2302UQ-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 4.2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 50µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V | auf Bestellung 48770 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2302UQ-13 | Diodes Incorporated | MOSFET N-Ch Enh Mode FET 20Vdss 8Vgss 27A | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2302UQ-13 | Diodes Zetex | N-Channel Enhancement Mode Mosfet Automotive AEC-Q101 | auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2302UQ-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 4.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 50µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V | auf Bestellung 40000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2302UQ-7 | Diodes Inc | N-Channel Enhancement Mode Mosfet | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2302UQ-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 4.2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 50µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V | auf Bestellung 13970 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2302UQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.8A Pulsed drain current: 25A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 45mΩ Mounting: SMD Gate charge: 4.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2302UQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.8A Pulsed drain current: 25A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 45mΩ Mounting: SMD Gate charge: 4.3nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2302UQ-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 4.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 50µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2302UQ-7 | Diodes Incorporated | MOSFET N-Ch Enh Mode FET 20Vdss 8Vgss 27A | auf Bestellung 2990 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG2302UQ-7 | Diodes Zetex | N-Channel Enhancement Mode Mosfet Automotive AEC-Q101 | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2305UX | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2305UX-13 | Diodes Zetex | Automotive-grade P-channel SOT-23 MOSFET with a maximum drain-source voltage of -20 V, continuous drain current of -4.2 A, and a maximum thermal dissipation of 1.4 W. | auf Bestellung 220000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2305UX-13 | Diodes Inc./Zetex | Trans MOSFET P-CH 20V 4.2A Automotive 3-Pin SOT-23 T/R | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG2305UX-13 | Diodes Zetex | Automotive-grade P-channel SOT-23 MOSFET with a maximum drain-source voltage of -20 V, continuous drain current of -4.2 A, and a maximum thermal dissipation of 1.4 W. | auf Bestellung 63 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG2305UX-13 | DIODES INC. | Description: DIODES INC. - DMG2305UX-13 - Leistungs-MOSFET, p-Kanal, 20 V, 4.2 A, 0.04 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 900mV euEccn: NLR Verlustleistung: 1.4W Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.04ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 215806 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG2305UX-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; Idm: -15A; 1.4W; SOT23 Mounting: SMD On-state resistance: 0.2Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Drain current: -3.3A Drain-source voltage: -20V Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -15A | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2305UX-13 | Diodes Incorporated | Транзистор польовий SOT-23-3 P-Ch Vdss=-20V, Id=3,3A, Rdson=0.052 Ohm, Vgs=-4,5 V; | auf Bestellung 238 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2305UX-13 | Diodes Zetex | Automotive-grade P-channel SOT-23 MOSFET with a maximum drain-source voltage of -20 V, continuous drain current of -4.2 A, and a maximum thermal dissipation of 1.4 W. | auf Bestellung 260000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2305UX-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.2A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 15 V | auf Bestellung 4027935 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2305UX-13 | Diodes Zetex | Automotive-grade P-channel SOT-23 MOSFET with a maximum drain-source voltage of -20 V, continuous drain current of -4.2 A, and a maximum thermal dissipation of 1.4 W. | auf Bestellung 320000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2305UX-13 | Diodes Zetex | Automotive-grade P-channel SOT-23 MOSFET with a maximum drain-source voltage of -20 V, continuous drain current of -4.2 A, and a maximum thermal dissipation of 1.4 W. | auf Bestellung 260000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2305UX-13 | DIODES INC. | Description: DIODES INC. - DMG2305UX-13 - Leistungs-MOSFET, p-Kanal, 20 V, 4.2 A, 0.04 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 900mV euEccn: NLR Verlustleistung: 1.4W Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.04ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 215806 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG2305UX-13 Produktcode: 181611 | Transistoren > Transistoren P-Kanal-Feld | Produkt ist nicht verfügbar | ||||||||||||||||||||
| DMG2305UX-13 | Diodes Zetex | Automotive-grade P-channel SOT-23 MOSFET with a maximum drain-source voltage of -20 V, continuous drain current of -4.2 A, and a maximum thermal dissipation of 1.4 W. | auf Bestellung 320000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2305UX-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; Idm: -15A; 1.4W; SOT23 Mounting: SMD On-state resistance: 0.2Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Drain current: -3.3A Drain-source voltage: -20V Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -15A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2305UX-13 | Diodes Zetex | Automotive-grade P-channel SOT-23 MOSFET with a maximum drain-source voltage of -20 V, continuous drain current of -4.2 A, and a maximum thermal dissipation of 1.4 W. | auf Bestellung 220000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2305UX-13 | Diodes Inc | Trans MOSFET P-CH 20V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 220000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG2305UX-13 | DIODES/ZETEX | Transistor P-Channel MOSFET; 20V; 8V; 200mOhm; 4,2A; 1,4W; -55°C ~ 150°C; DMG2305UX-7, DMG2305UX-13 DMG2305UX TDMG2305ux Anzahl je Verpackung: 100 Stücke | auf Bestellung 10000 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG2305UX-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.2A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 15 V | auf Bestellung 4020000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2305UX-13 | Diodes Zetex | Automotive-grade P-channel SOT-23 MOSFET with a maximum drain-source voltage of -20 V, continuous drain current of -4.2 A, and a maximum thermal dissipation of 1.4 W. | auf Bestellung 2950000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2305UX-13 | Diodes Incorporated | MOSFET P-Ch ENH FET -20V 52mOhm -5.0V | auf Bestellung 286883 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG2305UX-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 2583000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2305UX-7 | DIODES/ZETEX | Transistor P-Channel MOSFET; 20V; 8V; 200mOhm; 4,2A; 1,4W; -55°C ~ 150°C; DMG2305UX-7, DMG2305UX-13 DMG2305UX TDMG2305ux Anzahl je Verpackung: 100 Stücke | auf Bestellung 350 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG2305UX-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.2A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 15 V | auf Bestellung 3652901 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2305UX-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 2583000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2305UX-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 97 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG2305UX-7 | DIODES INC. | Description: DIODES INC. - DMG2305UX-7 - Leistungs-MOSFET, p-Kanal, 20 V, 4.2 A, 0.04 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 900mV euEccn: NLR Verlustleistung: 1.4W Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.04ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 345597 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG2305UX-7 | Diodes Inc | Trans MOSFET P-CH 20V 4.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2305UX-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 24419 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2305UX-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; 1.4W; SOT23 Mounting: SMD On-state resistance: 0.2Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Drain current: -3.3A Drain-source voltage: -20V Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 10 Stücke | auf Bestellung 2620 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG2305UX-7 | Diodes Incorporated | MOSFET P-Ch ENH FET -20V 52mOh -5A | auf Bestellung 992380 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG2305UX-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2305UX-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.2A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 15 V | auf Bestellung 3651000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2305UX-7 | DIODES INC. | Description: DIODES INC. - DMG2305UX-7 - Leistungs-MOSFET, p-Kanal, 20 V, 4.2 A, 0.04 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 900mV euEccn: NLR Verlustleistung: 1.4W Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.04ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 345597 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG2305UX-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; 1.4W; SOT23 Mounting: SMD On-state resistance: 0.2Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Drain current: -3.3A Drain-source voltage: -20V Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±8V | auf Bestellung 2620 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2305UX-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2305UX-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2305UXQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2305UXQ-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.2A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2305UXQ-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23 Mounting: SMD On-state resistance: 0.2Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Drain current: -4A Drain-source voltage: -20V Gate charge: 10.2nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -15A | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2305UXQ-13 | Diodes Zetex | Trans MOSFET P-CH 20V 4.2A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2305UXQ-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23 Mounting: SMD On-state resistance: 0.2Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Drain current: -4A Drain-source voltage: -20V Gate charge: 10.2nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -15A Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2305UXQ-13 | Diodes Inc | P-CHANNEL ENHANCEMENT MODE MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2305UXQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23 Mounting: SMD On-state resistance: 0.2Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Drain current: -4A Drain-source voltage: -20V Gate charge: 10.2nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -15A | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2305UXQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.2A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2305UXQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.2A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2305UXQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23 Mounting: SMD On-state resistance: 0.2Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Drain current: -4A Drain-source voltage: -20V Gate charge: 10.2nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -15A Anzahl je Verpackung: 10 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2305UXQ-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.2A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 49 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2305UXQ-7 | Diodes Inc | P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2305UXQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.2A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2305UXQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS | auf Bestellung 110816 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG2305UXQ-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.2A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2307L | DIODES INC. | Description: DIODES INC. - DMG2307L - Leistungs-MOSFET, Anreicherungstyp, p-Kanal, 30 V, 4.6 A, 0.07 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 4.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 760mW Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.07ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 67135 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG2307L | DIODES INC. | Description: DIODES INC. - DMG2307L - Leistungs-MOSFET, Anreicherungstyp, p-Kanal, 30 V, 4.6 A, 0.07 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 4.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 760mW Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.07ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 67135 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG2307L-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R | auf Bestellung 72000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2307L-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 2.5A SOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V Power Dissipation (Max): 760mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V | auf Bestellung 849000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2307L-7 | DIODES INC. | Description: DIODES INC. - DMG2307L-7 - Leistungs-MOSFET, p-Kanal, 30 V, 2.5 A, 0.07 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 760mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.07ohm | auf Bestellung 8929 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG2307L-7 | Diodes Inc | Trans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2307L-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 25V-30V,SOT23,3K | auf Bestellung 72318 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG2307L-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R | auf Bestellung 738000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2307L-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R | auf Bestellung 72000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2307L-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.76W; SOT23 Mounting: SMD On-state resistance: 0.134Ω Type of transistor: P-MOSFET Power dissipation: 0.76W Polarisation: unipolar Kind of package: reel; tape Drain current: -2A Drain-source voltage: -30V Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±20V | auf Bestellung 1015 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2307L-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 2.5A SOT-23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V Power Dissipation (Max): 760mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V | auf Bestellung 850597 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2307L-7 | DIODES INC. | Description: DIODES INC. - DMG2307L-7 - Leistungs-MOSFET, p-Kanal, 30 V, 2.5 A, 0.07 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 760mW Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 760mW Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.07ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.07ohm | auf Bestellung 8929 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG2307L-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R | auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG2307L-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.76W; SOT23 Mounting: SMD On-state resistance: 0.134Ω Type of transistor: P-MOSFET Power dissipation: 0.76W Polarisation: unipolar Kind of package: reel; tape Drain current: -2A Drain-source voltage: -30V Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 5 Stücke | auf Bestellung 1015 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG2307L-7 G24.. | DIODES/ZETEX | P-CHANNEL ENHANCEMENT MODE MOSFET 90mOhm, -30V, -3.8A DMG2307L TDMG2307l Anzahl je Verpackung: 100 Stücke | auf Bestellung 1600 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG2307L-7-50 | Diodes Zetex | P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2307L-7-52 | Diodes Zetex | P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2307LQ-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 264 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG2307LQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -20A; 1.9W; SOT23 Mounting: SMD On-state resistance: 0.134Ω Type of transistor: P-MOSFET Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Drain current: -3.6A Drain-source voltage: -30V Gate charge: 8.2nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -20A Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2307LQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -20A; 1.9W; SOT23 Mounting: SMD On-state resistance: 0.134Ω Type of transistor: P-MOSFET Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Drain current: -3.6A Drain-source voltage: -30V Gate charge: 8.2nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -20A | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2307LQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT23 T&R Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V Power Dissipation (Max): 760mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 168000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2307LQ-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 264 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG2307LQ-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 168000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG2307LQ-7 | Diodes Inc | Trans MOSFET P-CH 30V 3.8A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG2307LQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT23 T&R Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V Power Dissipation (Max): 760mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 170625 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG2307LQ-7 | Diodes Incorporated | MOSFET 30V P-Ch Enhancement Mode | auf Bestellung 5715 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG263010R | Panasonic Electronic Components | Description: TRANS NPN/PNP PREBIAS 0.3W MINI5 Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: Mini5-G3-B | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG263010R | Panasonic Electronic Components | Description: TRANS NPN/PNP PREBIAS 0.3W MINI5 Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: Mini5-G3-B | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG263010R | Panasonic | Bipolar Transistors - Pre-Biased COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | auf Bestellung 2800 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
| DMG263020R | Panasonic | Bipolar Transistors - Pre-Biased COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG263020R | Panasonic Electronic Components | Description: TRANS NPN/PNP PREBIAS 0.3W MINI5 Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: Mini5-G3-B | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG263020R | Panasonic Electronic Components | Description: TRANS NPN/PNP PREBIAS 0.3W MINI5 Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: Mini5-G3-B | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG264010R | Panasonic Electronic Components | Description: TRANS NPN/PNP PREBIAS 0.3W MINI6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG264010R | Panasonic | Bipolar Transistors - Pre-Biased COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | auf Bestellung 6683 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
| DMG264010R | Panasonic Electronic Components | Description: TRANS NPN/PNP PREBIAS 0.3W MINI6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG264020R | Panasonic Electronic Components | Description: TRANS NPN/PNP PREBIAS 0.3W MINI6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG264020R | Panasonic | Bipolar Transistors - Pre-Biased COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | auf Bestellung 3043 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
| DMG264020R | Panasonic Electronic Components | Description: TRANS NPN/PNP PREBIAS 0.3W MINI6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG264040R | Panasonic Electronic Components | Description: TRANS NPN/PNP PREBIAS 0.3W MINI6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG264040R | Panasonic Electronic Components | Description: TRANS NPN/PNP PREBIAS 0.3W MINI6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG264040R | Panasonic | Bipolar Transistors - Pre-Biased COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | auf Bestellung 3560 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
| DMG264050R | Panasonic Electronic Components | Description: TRANS NPN/PNP PREBIAS 0.3W MINI6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG264050R | Panasonic Electronic Components | Description: TRANS NPN/PNP PREBIAS 0.3W MINI6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG264050R | Panasonic | Bipolar Transistors - Pre-Biased COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG264060R | Panasonic | Bipolar Transistors - Pre-Biased COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG264060R | Panasonic Electronic Components | Description: TRANS NPN/PNP PREBIAS 0.3W MINI6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG264060R | Panasonic Electronic Components | Description: TRANS NPN/PNP PREBIAS 0.3W MINI6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG264120R | Panasonic | Bipolar Transistors - Pre-Biased COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | auf Bestellung 6948 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
| DMG264120R | Panasonic Electronic Components | Description: TRANS NPN/PNP PREBIAS 0.3W MINI6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG264H00R | Panasonic | Bipolar Transistors - Pre-Biased COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | auf Bestellung 3000 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
| DMG264H00R | Panasonic Electronic Components | Description: TRANS NPN/PNP PREBIAS 0.3W MINI6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA / 250mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA, 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 50 @ 100mA, 10V Resistor - Base (R1): 47kOhms, 4.7kOhms Resistor - Emitter Base (R2): 47kOhms, 4.7kOhms Supplier Device Package: Mini6-G4-B | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG300 | LOVATO ELECTRIC | Category: Power Network Meters and Analyzers Description: Meter: network parameters; for DIN rail mounting; LCD; 128x80 Mounting: for DIN rail mounting Manufacturer series: DMG Related items: EXP1001; EXP1013; EXP1020 Kind of network: three-phase Kind of meter: digital; mounting Kind of display used: LCD Active power measuring accuracy: ±0,5% True effective value measurement: True RMS Display resolution: 128x80 Kind of measurement: indirect with 1A current transformer; indirect with 5A current transformer Frequency measuring range: 45...65Hz AC voltage measuring range: 10...480V AC current measuring accuracy: ±0,2% Dimensions (W x H x D): 71.6x90x63mm Illumination: yes Type of meter: network parameters AC voltage measuring accuracy: ±0,2% IP rating: IP20 at terminal side; IP40 (from the front) Measurement: AC current; active power; AC voltage; apparent power; energy; frequency; power factor; reactive power AC current measuring range: 10mA...6A Measuring instrument features: FFT up to 31st harmonic; multilanguage menu Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG300 | LOVATO ELECTRIC | Category: Power Network Meters and Analyzers Description: Meter: network parameters; for DIN rail mounting; LCD; 128x80 Mounting: for DIN rail mounting Manufacturer series: DMG Related items: EXP1001; EXP1013; EXP1020 Kind of network: three-phase Kind of meter: digital; mounting Kind of display used: LCD Active power measuring accuracy: ±0,5% True effective value measurement: True RMS Display resolution: 128x80 Kind of measurement: indirect with 1A current transformer; indirect with 5A current transformer Frequency measuring range: 45...65Hz AC voltage measuring range: 10...480V AC current measuring accuracy: ±0,2% Dimensions (W x H x D): 71.6x90x63mm Illumination: yes Type of meter: network parameters AC voltage measuring accuracy: ±0,2% IP rating: IP20 at terminal side; IP40 (from the front) Measurement: AC current; active power; AC voltage; apparent power; energy; frequency; power factor; reactive power AC current measuring range: 10mA...6A Measuring instrument features: FFT up to 31st harmonic; multilanguage menu | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG301NU | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG301NU-13 | Diodes Zetex | Trans MOSFET N-CH 25V 0.26A 3-Pin SOT-23 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG301NU-13 | Diodes Zetex | Trans MOSFET N-CH 25V 0.26A 3-Pin SOT-23 T/R | auf Bestellung 7001 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG301NU-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 0.23A; 0.4W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 25V Drain current: 0.23A On-state resistance: 5Ω Type of transistor: N-MOSFET Power dissipation: 0.4W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 5 Stücke | auf Bestellung 5035 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG301NU-13 | DIODES INC. | Description: DIODES INC. - DMG301NU-13 - Leistungs-MOSFET, n-Kanal, 25 V, 260 mA, 4 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 25V rohsCompliant: YES Dauer-Drainstrom Id: 260mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.1V euEccn: NLR Verlustleistung: 320mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 4ohm | auf Bestellung 17387 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG301NU-13 | Diodes Inc | Trans MOSFET N-CH 25V 0.26A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG301NU-13 | Diodes Zetex | Trans MOSFET N-CH 25V 0.26A 3-Pin SOT-23 T/R | auf Bestellung 7001 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG301NU-13 | Diodes Incorporated | MOSFET 25V N-Ch ENH FET 25Vds 8Vgs 0.32W | auf Bestellung 10070 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG301NU-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 0.23A; 0.4W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 25V Drain current: 0.23A On-state resistance: 5Ω Type of transistor: N-MOSFET Power dissipation: 0.4W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V | auf Bestellung 5035 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG301NU-13 | Diodes Incorporated | Description: MOSFET N-CH 25V 260MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 27.9 pF @ 10 V | auf Bestellung 409222 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG301NU-13 | Diodes Zetex | Trans MOSFET N-CH 25V 0.26A 3-Pin SOT-23 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG301NU-13 | Diodes Zetex | Trans MOSFET N-CH 25V 0.26A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG301NU-13 | Diodes Zetex | Trans MOSFET N-CH 25V 0.26A 3-Pin SOT-23 T/R | auf Bestellung 4800 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG301NU-13 | DIODES INC. | Description: DIODES INC. - DMG301NU-13 - Leistungs-MOSFET, n-Kanal, 25 V, 260 mA, 4 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 25V rohsCompliant: YES Dauer-Drainstrom Id: 260mA hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Verlustleistung Pd: 320mW Gate-Source-Schwellenspannung, max.: 1.1V euEccn: NLR Verlustleistung: 320mW Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 4ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 4ohm | auf Bestellung 17767 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG301NU-13 | Diodes Incorporated | Description: MOSFET N-CH 25V 260MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 27.9 pF @ 10 V | auf Bestellung 390000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG301NU-13 | Diodes Zetex | Trans MOSFET N-CH 25V 0.26A 3-Pin SOT-23 T/R | auf Bestellung 4800 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG301NU-7 | Diodes Incorporated | MOSFET 25V N-Ch ENH FET 25Vds 8Vgs 0.32W | auf Bestellung 23469 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG301NU-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 0.23A; 0.4W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 25V Drain current: 0.23A On-state resistance: 5Ω Type of transistor: N-MOSFET Power dissipation: 0.4W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG301NU-7 | Diodes Incorporated | Description: MOSFET N-CH 25V 260MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 10 V | auf Bestellung 528000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG301NU-7 | Diodes Zetex | Trans MOSFET N-CH 25V 0.26A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG301NU-7 | Diodes Incorporated | Description: MOSFET N-CH 25V 260MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 10 V | auf Bestellung 528000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG301NU-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 0.23A; 0.4W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 25V Drain current: 0.23A On-state resistance: 5Ω Type of transistor: N-MOSFET Power dissipation: 0.4W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 5 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG301NU-7 | Diodes Inc | Trans MOSFET N-CH 25V 0.26A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG301NU-7 | Diodes Zetex | Trans MOSFET N-CH 25V 0.26A 3-Pin SOT-23 T/R | auf Bestellung 528000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG302PU-13 | Diodes Incorporated | Description: MOSFET P-CH 25V 170MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 27.2 pF @ 10 V | auf Bestellung 550000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG302PU-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -25V; -140mA; Idm: -0.5A; 450mW Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.45W Drain-source voltage: -25V Drain current: -140mA On-state resistance: 13Ω Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 0.35nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -0.5A Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG302PU-13 | Diodes Inc | Trans MOSFET P-CH 25V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG302PU-13 | Diodes Incorporated | MOSFET 25V P-Ch Enh Mode FET -8Vgss 0.33W | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG302PU-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -25V; -140mA; Idm: -0.5A; 450mW Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.45W Drain-source voltage: -25V Drain current: -140mA On-state resistance: 13Ω Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 0.35nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -0.5A | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG302PU-13 | Diodes Incorporated | Description: MOSFET P-CH 25V 170MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 27.2 pF @ 10 V | auf Bestellung 560000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG302PU-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -25V; -140mA; Idm: -0.5A; 450mW Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.45W Drain-source voltage: -25V Drain current: -140mA On-state resistance: 13Ω Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 0.35nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -0.5A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG302PU-7 | Diodes Incorporated | Description: MOSFET P-CH 25V 170MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V Power Dissipation (Max): 330mW Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 27.2 pF @ 10 V | auf Bestellung 490111 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG302PU-7 | Diodes Inc | Trans MOSFET P-CH 25V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG302PU-7 | Diodes Incorporated | MOSFET 25V P-Ch Enh FET 27.2pF 0.35nC | auf Bestellung 2970 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG302PU-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -25V; -140mA; Idm: -0.5A; 450mW Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.45W Drain-source voltage: -25V Drain current: -140mA On-state resistance: 13Ω Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 0.35nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -0.5A | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG302PU-7 | Diodes Incorporated | Description: MOSFET P-CH 25V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V Power Dissipation (Max): 330mW Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 27.2 pF @ 10 V | auf Bestellung 489000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3401LSN-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3A 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3401LSN-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 3A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SC-59-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1326 pF @ 15 V | auf Bestellung 474000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3401LSN-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3A 3-Pin SC-59 T/R | auf Bestellung 189000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3401LSN-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3A 3-Pin SC-59 T/R | auf Bestellung 189000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3401LSN-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3A 3-Pin SC-59 T/R | auf Bestellung 1240 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3401LSN-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59 Mounting: SMD Case: SC59 Kind of package: reel; tape Power dissipation: 1.2W Polarisation: unipolar Gate charge: 25.1nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -30A Drain-source voltage: -30V Drain current: -2.9A On-state resistance: 85mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3401LSN-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 3A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SC-59-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1326 pF @ 15 V | auf Bestellung 477125 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3401LSN-7 | Diodes Inc | Trans MOSFET P-CH 30V 3A 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3401LSN-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3A 3-Pin SC-59 T/R | auf Bestellung 1240 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3401LSN-7 | Diodes Incorporated | MOSFET 30V P-CH MOSFET | auf Bestellung 9306 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG3401LSN-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59 Mounting: SMD Case: SC59 Kind of package: reel; tape Power dissipation: 1.2W Polarisation: unipolar Gate charge: 25.1nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -30A Drain-source voltage: -30V Drain current: -2.9A On-state resistance: 85mΩ Type of transistor: P-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3401LSN-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3A 3-Pin SC-59 T/R | auf Bestellung 552000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3401LSNQ-13 | Diodes Zetex | P-Channel Enhancement Mode MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3401LSNQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V~30V SC59 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3401LSNQ-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 3A SC59-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Power Dissipation (Max): 800mW Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SC-59-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1326 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3401LSNQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V~30V SC59 T&R 3K | auf Bestellung 1430 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG3401LSNQ-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 3A SC59-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Power Dissipation (Max): 800mW Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SC-59-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1326 pF @ 15 V | auf Bestellung 1320000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3401LSNQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59 Mounting: SMD Case: SC59 Kind of package: reel; tape Power dissipation: 1.2W Polarisation: unipolar Gate charge: 25.1nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -30A Drain-source voltage: -30V Drain current: -2.9A On-state resistance: 85mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3401LSNQ-7 | Diodes Zetex | MOSFET 31V to 40V SC59 3K Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3401LSNQ-7 | Diodes Inc | MOSFET BVDSS, 31V to 40V SC59 3K | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3401LSNQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59 Mounting: SMD Case: SC59 Kind of package: reel; tape Power dissipation: 1.2W Polarisation: unipolar Gate charge: 25.1nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -30A Drain-source voltage: -30V Drain current: -2.9A On-state resistance: 85mΩ Type of transistor: P-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3401LSNQ-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 3A SC59-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Power Dissipation (Max): 800mW Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SC-59-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1326 pF @ 15 V | auf Bestellung 1320000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3401LSNQ-7 | Diodes Zetex | MOSFET 31V to 40V SC59 3K Automotive AEC-Q101 | auf Bestellung 1002000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3402L | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3402L-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 1.4W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±12V Drain-source voltage: 30V Drain current: 4A On-state resistance: 85mΩ Type of transistor: N-MOSFET | auf Bestellung 810 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3402L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 180000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3402L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 273000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3402L-7 | DIODES INC. | Description: DIODES INC. - DMG3402L-7 - Leistungs-MOSFET, n-Kanal, 30 V, 4 A, 0.052 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Verlustleistung Pd: 1.4W Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 1.4W Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) productTraceability: No Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.052ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.052ohm | auf Bestellung 20009 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG3402L-7 | Diodes Incorporated | MOSFET FET BVDSS 25V 30V N-Ch 305pF 8.2nC | auf Bestellung 35297 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG3402L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 275 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG3402L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V | auf Bestellung 2580000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3402L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 180000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3402L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 300000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3402L-7 | DIODES INC. | Description: DIODES INC. - DMG3402L-7 - Leistungs-MOSFET, n-Kanal, 30 V, 4 A, 0.052 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 1.4W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.052ohm | auf Bestellung 20009 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG3402L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 891000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3402L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 300000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3402L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V | auf Bestellung 2581829 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3402L-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 1.4W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±12V Drain-source voltage: 30V Drain current: 4A On-state resistance: 85mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 5 Stücke | auf Bestellung 810 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG3402L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 273000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3402L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 275 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG3402L-7 | Diodes Inc | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 273000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG3402L-7 N32. | DIODES/ZETEX | Trans MOSFET N-CH 30V 4A Automotive 3-Pin SOT-23 T/R DMG3402L-7 TDMG3402L-7 Diodes Anzahl je Verpackung: 500 Stücke | auf Bestellung 2400 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG3402LQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 1.4W Polarisation: unipolar Gate charge: 11.7nC Kind of channel: enhanced Gate-source voltage: ±12V Drain-source voltage: 30V Drain current: 4A On-state resistance: 85mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3402LQ-13 | Diodes Zetex | Trans MOSFET N-CH 30V 4A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3402LQ-13 | Diodes Inc | Trans MOSFET N-CH 30V 4A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3402LQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 1.4W Polarisation: unipolar Gate charge: 11.7nC Kind of channel: enhanced Gate-source voltage: ±12V Drain-source voltage: 30V Drain current: 4A On-state resistance: 85mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3402LQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V | auf Bestellung 10000 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG3402LQ-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 40000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3402LQ-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 2314 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3402LQ-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 20342 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3402LQ-7 | Diodes Inc | Trans MOSFET N-CH 30V 4A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3402LQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 1.4W Polarisation: unipolar Gate charge: 11.7nC Kind of channel: enhanced Gate-source voltage: ±12V Drain-source voltage: 30V Drain current: 4A On-state resistance: 85mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3402LQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V | auf Bestellung 6591 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG3402LQ-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3402LQ-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3402LQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 1.4W Polarisation: unipolar Gate charge: 11.7nC Kind of channel: enhanced Gate-source voltage: ±12V Drain-source voltage: 30V Drain current: 4A On-state resistance: 85mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3402LQ-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 2314 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3404L | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3404L-13 | Diodes Zetex | Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3404L-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 30A; 1.33W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 1.33W Polarisation: unipolar Gate charge: 13.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Drain-source voltage: 30V Drain current: 4.9A On-state resistance: 35mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3404L-13 | Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 20Vgs 641pF 13.2nC | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3404L-13 | Diodes Zetex | Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3404L-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 4.2A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V Power Dissipation (Max): 780mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3404L-13 | Diodes Inc | Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3404L-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 30A; 1.33W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 1.33W Polarisation: unipolar Gate charge: 13.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Drain-source voltage: 30V Drain current: 4.9A On-state resistance: 35mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3404L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3404L-7 | Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 20Vgs 641pF 13.2nC | auf Bestellung 10595 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG3404L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 4.2A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V Power Dissipation (Max): 780mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V | auf Bestellung 291000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3404L-7 | Diodes Inc | Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG3404L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3404L-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.8A; 1.33W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 1.33W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 4.8A On-state resistance: 35mΩ Type of transistor: N-MOSFET | auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3404L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3404L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 255000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3404L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3404L-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.8A; 1.33W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 1.33W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 4.8A On-state resistance: 35mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 5 Stücke | auf Bestellung 35 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG3404L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 4.2A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V Power Dissipation (Max): 780mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V | auf Bestellung 295248 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3404L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3404L-7-ML | MOSLEADER | Description: N 30V 5.8A SOT23 Packaging: Tape & Reel (TR) | auf Bestellung 300000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3406L | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3406L-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 3.6A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V Power Dissipation (Max): 770mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 15 V | auf Bestellung 290000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3406L-13 | Diodes Zetex | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | auf Bestellung 10235 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3406L-13 | Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 50mOhm 10V 3.6A | auf Bestellung 236505 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG3406L-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 1.4W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 2.8A On-state resistance: 70mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3406L-13 | Diodes Zetex | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3406L-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 3.6A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V Power Dissipation (Max): 770mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 15 V | auf Bestellung 306908 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3406L-13 | Diodes Inc | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3406L-13 | Diodes Zetex | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | auf Bestellung 10235 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3406L-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 1.4W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 2.8A On-state resistance: 70mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3406L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3406L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | auf Bestellung 2519 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3406L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 3.6A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V Power Dissipation (Max): 770mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 15 V | auf Bestellung 108000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3406L-7 | DIODES INC. | Description: DIODES INC. - DMG3406L-7 - Leistungs-MOSFET, n-Kanal, 30 V, 3.6 A, 0.025 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 3.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Verlustleistung Pd: 770mW Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 770mW Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: DMG3406L productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.025ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.025ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 13040 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG3406L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | auf Bestellung 2519 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3406L-7 | Diodes Inc | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG3406L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | auf Bestellung 78000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3406L-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 1.4W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 2.8A On-state resistance: 70mΩ Type of transistor: N-MOSFET | auf Bestellung 835 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3406L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3406L-7 | DIODES INC. | Description: DIODES INC. - DMG3406L-7 - Leistungs-MOSFET, n-Kanal, 30 V, 3.6 A, 0.025 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 3.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 770mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: DMG3406L productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.025ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 13040 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG3406L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | auf Bestellung 87000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3406L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 3.6A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V Power Dissipation (Max): 770mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 15 V | auf Bestellung 114396 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3406L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | auf Bestellung 87000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3406L-7 | Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 50mOhm 10V 3.6A | auf Bestellung 8145 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG3406L-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 1.4W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 2.8A On-state resistance: 70mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 5 Stücke | auf Bestellung 835 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG3406L-7-ML | MOSLEADER | Description: N 30V 3.6A SOT23 Packaging: Tape & Reel (TR) | auf Bestellung 300000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3407SSN-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 4A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4.1A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SC-59-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3407SSN-7 | Diodes Zetex | Trans MOSFET P-CH 30V 4A 3-Pin SC-59 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3407SSN-7 | Diodes Inc | Trans MOSFET P-CH 30V 4A 3-Pin SC-59 T/R | auf Bestellung 50921 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG3407SSN-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -30A; 1.1W; SC59 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Pulsed drain current: -30A Power dissipation: 1.1W Case: SC59 Gate-source voltage: ±20V On-state resistance: 72mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3407SSN-7 | Diodes Zetex | Trans MOSFET P-CH 30V 4A 3-Pin SC-59 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3407SSN-7 | Diodes Zetex | Trans MOSFET P-CH 30V 4A 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3407SSN-7 | Diodes Incorporated | MOSFET MOSFET BVDSS | auf Bestellung 5503 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG3407SSN-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -30A; 1.1W; SC59 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Pulsed drain current: -30A Power dissipation: 1.1W Case: SC59 Gate-source voltage: ±20V On-state resistance: 72mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3407SSN-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 4A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4.1A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SC-59-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V | auf Bestellung 14719 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3407SSN-7 | Diodes Zetex | Trans MOSFET P-CH 30V 4A 3-Pin SC-59 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3407SSN-7 | Diodes Zetex | Trans MOSFET P-CH 30V 4A 3-Pin SC-59 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3413L-7 | Diodes Incorporated | MOSFET MOSFET BVDSS | auf Bestellung 5214 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG3413L-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; Idm: -20A; 1.3W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.9A Pulsed drain current: -20A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3413L-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 3A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 857 pF @ 10 V | auf Bestellung 723000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3413L-7 | Diodes Zetex | Trans MOSFET P-CH 20V 3A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3413L-7 | Diodes Zetex | Trans MOSFET P-CH 20V 3A 3-Pin SOT-23 T/R | auf Bestellung 717000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3413L-7 | Diodes Inc | Trans MOSFET P-CH 20V 3A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3413L-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; Idm: -20A; 1.3W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.9A Pulsed drain current: -20A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3413L-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 3A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 857 pF @ 10 V | auf Bestellung 725961 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3413L-7 | Diodes Zetex | Trans MOSFET P-CH 20V 3A 3-Pin SOT-23 T/R | auf Bestellung 723000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3414U | DIODES INC. | Description: DIODES INC. - DMG3414U - Leistungs-MOSFET, Anreicherungstyp, n-Kanal, 20 V, 4.2 A, 0.019 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 500mV euEccn: NLR Verlustleistung: 780mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.019ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 5233 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG3414U | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3414U | DIODES/ZETEX | N-MOSFET 20V 4.2A 25mΩ 780mW DMG3414U Diodes TDMG3414u Anzahl je Verpackung: 100 Stücke | auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG3414U | DIODES INC. | Description: DIODES INC. - DMG3414U - Leistungs-MOSFET, Anreicherungstyp, n-Kanal, 20 V, 4.2 A, 0.019 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 500mV euEccn: NLR Verlustleistung: 780mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.019ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 5233 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG3414U-7 | Diodes Zetex | Trans MOSFET N-CH 20V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 2620 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3414U-7 | Diodes Zetex | Trans MOSFET N-CH 20V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 2620 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3414U-7 Produktcode: 197913 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
| DMG3414U-7 | Diodes Inc | Trans MOSFET N-CH 20V 4.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3414U-7 | Diodes Incorporated | MOSFET N-Ch 20V VDSS 8 Vgss 30A IDM | auf Bestellung 6964 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG3414U-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 0.78W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.2A Power dissipation: 0.78W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 37mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 6227 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3414U-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 0.78W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.2A Power dissipation: 0.78W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 37mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 6227 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG3414U-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 4.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V Power Dissipation (Max): 780mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V | auf Bestellung 348000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3414U-7 | Diodes Zetex | Trans MOSFET N-CH 20V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3414U-7 | Diodes Zetex | Trans MOSFET N-CH 20V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3414U-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 4.2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V Power Dissipation (Max): 780mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V | auf Bestellung 351110 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3414UQ-13 | Diodes Zetex | Trans MOSFET N-CH 20V 4.2A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3414UQ-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 4.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V Power Dissipation (Max): 780mW Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3414UQ-13 | Diodes Inc | Trans MOSFET N-CH 20V 4.2A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3414UQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3414UQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 780mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.2A Pulsed drain current: 30A Power dissipation: 0.78W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 37mΩ Mounting: SMD Gate charge: 9.6nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3414UQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 780mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.2A Pulsed drain current: 30A Power dissipation: 0.78W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 37mΩ Mounting: SMD Gate charge: 9.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3414UQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 4.2A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 66000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3414UQ-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 4.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V Power Dissipation (Max): 780mW Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3414UQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 4.2A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 51000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3414UQ-7 | Diodes Inc | Trans MOSFET N-CH 20V 4.2A Automotive 3-Pin SOT-23 T/R | auf Bestellung 51000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG3414UQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 82672 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG3414UQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 780mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.2A Pulsed drain current: 30A Power dissipation: 0.78W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 37mΩ Mounting: SMD Gate charge: 9.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3414UQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 780mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.2A Pulsed drain current: 30A Power dissipation: 0.78W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 37mΩ Mounting: SMD Gate charge: 9.6nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3414UQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 4.2A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 66000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3414UQ-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 4.2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V Power Dissipation (Max): 780mW Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 2723 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3414UQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 4.2A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 51000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3415U | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3415U-13 | Diodes Incorporated | Description: MOSFET P-CH DFN-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 42.5mOhm @ 4A, 4.5V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 10 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3415U-7 | Diodes Inc | Trans MOSFET P-CH 20V 4A 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG3415U-7 | DIODES/ZETEX | P-MOSFET 20V 4A 39mΩ 900mW DMG3415U Diodes TDMG3415u Anzahl je Verpackung: 100 Stücke | auf Bestellung 2750 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG3415U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4A 3-Pin SOT-23 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3415U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4A 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3415U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3415U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3415U-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 4A, 4.5V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 10 V | auf Bestellung 32103 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3415U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4A 3-Pin SOT-23 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3415U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4A 3-Pin SOT-23 T/R | auf Bestellung 2699 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3415U-7 | Diodes Incorporated | MOSFET P-CHANNEL ENHANCEMENT MODE | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3415U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4A 3-Pin SOT-23 T/R | auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3415U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4A 3-Pin SOT-23 T/R | auf Bestellung 2699 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3415U-7 Produktcode: 138016 | Transistoren > Transistoren P-Kanal-Feld | Produkt ist nicht verfügbar | ||||||||||||||||||||
| DMG3415U-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 4A, 4.5V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 10 V | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3415U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4A 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3415U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3415UFY4-7 | Diodes Incorporated | Description: MOSFET P-CH 16V 2.5A DFN2015H4-3 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 4A, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN2015H4-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 16 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 281.9 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3415UFY4-7 | Diodes Incorporated | MOSFET MOSFET P-CHAN. | auf Bestellung 5763 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
| DMG3415UFY4-7 | Diodes Zetex | Trans MOSFET P-CH 16V 2.5A 3-Pin DFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3415UFY4-7 | Diodes Inc | Trans MOSFET P-CH 16V 2.5A 3-Pin DFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3415UFY4Q-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -16V; -2.2A; Idm: -12A; 1.35W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -16V Drain current: -2.2A Pulsed drain current: -12A Power dissipation: 1.35W Case: X2-DFN2015-3 Gate-source voltage: ±8V On-state resistance: 65mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3415UFY4Q-7 | Diodes Inc | Trans MOSFET P-CH 16V 2.5A Automotive 3-Pin X2-DFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3415UFY4Q-7 | Diodes Incorporated | Description: MOSFET P-CH 16V 2.5A X2-DFN2015 Packaging: Cut Tape (CT) Package / Case: 3-XDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 4A, 4.5V Power Dissipation (Max): 650mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN2015-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 16 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 282 pF @ 10 V | auf Bestellung 52464 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3415UFY4Q-7 | Diodes Zetex | Trans MOSFET P-CH 16V 2.5A Automotive AEC-Q101 3-Pin X2-DFN T/R | auf Bestellung 2992 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3415UFY4Q-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -16V; -2.2A; Idm: -12A; 1.35W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -16V Drain current: -2.2A Pulsed drain current: -12A Power dissipation: 1.35W Case: X2-DFN2015-3 Gate-source voltage: ±8V On-state resistance: 65mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3415UFY4Q-7 | Diodes Incorporated | Description: MOSFET P-CH 16V 2.5A X2-DFN2015 Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 4A, 4.5V Power Dissipation (Max): 650mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN2015-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 16 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 282 pF @ 10 V | auf Bestellung 48000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3415UFY4Q-7 | Diodes Incorporated | MOSFET P-Ch -16V Enh FET 8Vgss -12A 0.65W | auf Bestellung 10561 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG3415UFY4Q-7 | Diodes Zetex | Trans MOSFET P-CH 16V 2.5A Automotive AEC-Q101 3-Pin X2-DFN T/R | auf Bestellung 2992 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3415UFY4Q-7-52 | Diodes Zetex | Trans MOSFET P-CH 16V 2.5A Automotive AEC-Q101 3-Pin X2-DFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3415UQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 78000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3415UQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 0.9W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Power dissipation: 0.9W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 71mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Application: automotive industry Anzahl je Verpackung: 5 Stücke | auf Bestellung 2097 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG3415UQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V~24V SOT23 T&R 3K | auf Bestellung 15210 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG3415UQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 303000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3415UQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 42.5mOhm @ 4A, 4.5V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 177038 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3415UQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3415UQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 0.9W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Power dissipation: 0.9W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 71mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Application: automotive industry | auf Bestellung 2097 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3415UQ-7 | Diodes Inc | Trans MOSFET P-CH 20V 4A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3415UQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 78000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3415UQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 42.5mOhm @ 4A, 4.5V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 174000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3418L | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3418L-13 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3418L-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 464.3 pF @ 15 V | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3418L-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 15A; 900mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.1A Pulsed drain current: 15A Power dissipation: 0.9W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 5.5nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3418L-13 | Diodes Inc | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3418L-13 | Diodes Incorporated | MOSFET N-Ch Enh FET 30V 12Vgss 4.0A 1.4W | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3418L-13 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3418L-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 15A; 900mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.1A Pulsed drain current: 15A Power dissipation: 0.9W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 5.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3418L-7 | Diodes Inc | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG3418L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 132000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3418L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3418L-7 | Diodes Incorporated | MOSFET N-Ch Enh FET 30V 12Vgss 4.0A 1.4W | auf Bestellung 12285 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG3418L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 495 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3418L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 464.3 pF @ 15 V | auf Bestellung 188988 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3418L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3418L-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; 1.4W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.1A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 70mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3418L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 495 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG3418L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 464.3 pF @ 15 V | auf Bestellung 183000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3418L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3418L-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; 1.4W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.1A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 70mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3420U-7 | Diodes Zetex | Trans MOSFET N-CH 20V 5.47A 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3420U-7 | DIODES/ZETEX | N-MOSFET 20V 5.47A 29mΩ 740mW DMG3420U-7 Diodes TDMG3420u Anzahl je Verpackung: 100 Stücke | auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG3420U-7 | Diodes Zetex | Trans MOSFET N-CH 20V 5.47A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3420U-7 Produktcode: 155587 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
| DMG3420U-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 5.47A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.47A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 434.7 pF @ 10 V | auf Bestellung 219000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3420U-7 | Diodes Zetex | Trans MOSFET N-CH 20V 5.47A 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3420U-7 | Diodes Inc | Trans MOSFET N-CH 20V 5.47A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG3420U-7 | Diodes Zetex | Trans MOSFET N-CH 20V 5.47A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3420U-7 | Diodes Incorporated | MOSFET MOSFET,N-CHANNEL | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3420U-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 5.47A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.47A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 434.7 pF @ 10 V | auf Bestellung 219995 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3420UQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.47A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V Power Dissipation (Max): 740mW Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 434.7 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 168000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG3420UQ-7 | Diodes Inc | Trans MOSFET N-CH 20V 5.47A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3420UQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 5.47A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3420UQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V SOT23 T&R 3K | auf Bestellung 1790 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG3420UQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.43A; Idm: 20A; 740mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.43A Pulsed drain current: 20A Power dissipation: 0.74W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 91mΩ Mounting: SMD Gate charge: 5.4nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3420UQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.43A; Idm: 20A; 740mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.43A Pulsed drain current: 20A Power dissipation: 0.74W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 91mΩ Mounting: SMD Gate charge: 5.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3420UQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 5.47A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 162000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3N60SCT | Diodes Incorporated | MOSFET MOSFET BVDSS: 501V-650V | auf Bestellung 363 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
| DMG3N60SCT | DIODES INCORPORATED | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 3.7A; 42W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2A Pulsed drain current: 3.7A Power dissipation: 42W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 2.7Ω Mounting: THT Gate charge: 12.6C Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3N60SCT | DIODES INCORPORATED | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 3.7A; 42W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2A Pulsed drain current: 3.7A Power dissipation: 42W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 2.7Ω Mounting: THT Gate charge: 12.6C Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG3N60SJ3 | Diodes Incorporated | MOSFET MOSFET BVDSS: 501V-650V | auf Bestellung 204 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
| DMG4406LSS-13 | Diodes Incorporated | Description: MOSFET N CH 30V 10.3A 8-SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1281 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4406LSS-13 | Diodes Incorporated | Description: MOSFET N CH 30V 10.3A 8-SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1281 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4406LSS-13 | Diodes Inc | Trans MOSFET N-CH 30V 10.3A 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4407SSS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K | auf Bestellung 141 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
| DMG4407SSS-13 | Diodes Inc | Trans MOSFET P-CH 30V 9.9A 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4407SSS-13 | Diodes Zetex | Trans MOSFET P-CH 30V 9.9A 8-Pin SO T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4407SSS-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 9.9A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V Power Dissipation (Max): 1.45W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V | auf Bestellung 22721 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG4407SSS-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 1.82W; SO8 Mounting: SMD Drain-source voltage: -30V Drain current: -10A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 1.82W Polarisation: unipolar Kind of package: reel; tape Gate charge: 41nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -80A Case: SO8 | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4407SSS-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 9.9A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V Power Dissipation (Max): 1.45W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG4407SSS-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 1.82W; SO8 Mounting: SMD Drain-source voltage: -30V Drain current: -10A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 1.82W Polarisation: unipolar Kind of package: reel; tape Gate charge: 41nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -80A Case: SO8 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4413LSS | auf Bestellung 2080 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| DMG4413LSS | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4413LSS-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 10.5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4965 pF @ 15 V | auf Bestellung 52358 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG4413LSS-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -45A; 1.4W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape Power dissipation: 1.4W Gate-source voltage: ±20V On-state resistance: 10.2mΩ Pulsed drain current: -45A Gate charge: 46nC Polarisation: unipolar Drain current: -17A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4413LSS-13 | Diodes Zetex | Trans MOSFET P-CH 30V 12A 8-Pin SOP EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4413LSS-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -45A; 1.4W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape Power dissipation: 1.4W Gate-source voltage: ±20V On-state resistance: 10.2mΩ Pulsed drain current: -45A Gate charge: 46nC Polarisation: unipolar Drain current: -17A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4413LSS-13 | Diodes Incorporated | MOSFET MOSFET,P-CHANNEL | auf Bestellung 12760 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG4413LSS-13 | Diodes Zetex | Trans MOSFET P-CH 30V 12A 8-Pin SOP EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4413LSS-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 10.5A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4965 pF @ 15 V | auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG4413LSS-13 | Diodes Inc | Trans MOSFET P-CH 30V 12A 8-Pin SOP EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4413LSS-13 | Diodes Zetex | Trans MOSFET P-CH 30V 12A 8-Pin SOP EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4435SSS | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4435SSS-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 7.3A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 11A, 20V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 20V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1614 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4435SSS-13 | Diodes Zetex | Trans MOSFET P-CH 30V 7.3A 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4435SSS-13 | Diodes Inc | Trans MOSFET P-CH 30V 7.3A 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4435SSS-13 | Diodes Incorporated | MOSFET MOSFET,P-CHANNEL | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4435SSS-13 | Diodes Zetex | Trans MOSFET P-CH 30V 7.3A 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4435SSS-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 7.3A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 11A, 20V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 20V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1614 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4466SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 10A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V Power Dissipation (Max): 1.42W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 478.9 pF @ 15 V | auf Bestellung 17500 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG4466SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 4927 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4466SSS-13 | Diodes Inc | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4466SSS-13 | Diodes Incorporated | MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD | auf Bestellung 9997 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG4466SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 10A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V Power Dissipation (Max): 1.42W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 478.9 pF @ 15 V | auf Bestellung 19529 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG4466SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 4927 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4466SSS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 6A On-state resistance: 33mΩ Type of transistor: N-MOSFET Power dissipation: 1.42W Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: 60A Mounting: SMD Case: SO8 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4466SSS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 6A On-state resistance: 33mΩ Type of transistor: N-MOSFET Power dissipation: 1.42W Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: 60A Mounting: SMD Case: SO8 | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4466SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4466SSSL-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 6A On-state resistance: 33mΩ Type of transistor: N-MOSFET Power dissipation: 1.42W Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Mounting: SMD Case: SO8 Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4466SSSL-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 17500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4466SSSL-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 6A On-state resistance: 33mΩ Type of transistor: N-MOSFET Power dissipation: 1.42W Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Mounting: SMD Case: SO8 | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4466SSSL-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 10A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V Power Dissipation (Max): 1.42W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 478.9 pF @ 15 V | auf Bestellung 17500 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG4466SSSL-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4466SSSL-13 | Diodes Inc | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4466SSSL-13 | Diodes Incorporated | MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD | auf Bestellung 2495 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG4468LFG | Diodes Incorporated | Description: MOSFET N-CH 30V 7.62A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V Power Dissipation (Max): 990mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: U-DFN3030-8 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4468LFG | Diodes Incorporated | Description: MOSFET N-CH 30V 7.62A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V Power Dissipation (Max): 990mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: U-DFN3030-8 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4468LFG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.83A; Idm: 45.9A; 990mW Kind of package: reel; tape Drain-source voltage: 30V Drain current: 4.83A On-state resistance: 23.5mΩ Type of transistor: N-MOSFET Power dissipation: 0.99W Polarisation: unipolar Gate charge: 18.85nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 45.9A Mounting: SMD Case: U-DFN3030-8 | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4468LFG-7 | Diodes Inc | Trans MOSFET N-CH 30V 7.62A 8-Pin DFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4468LFG-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 7.62A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V Power Dissipation (Max): 990mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: U-DFN3030-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4468LFG-7 | Diodes Incorporated | MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD | auf Bestellung 2975 Stücke: Lieferzeit 447-461 Tag (e) |
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| DMG4468LFG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.83A; Idm: 45.9A; 990mW Kind of package: reel; tape Drain-source voltage: 30V Drain current: 4.83A On-state resistance: 23.5mΩ Type of transistor: N-MOSFET Power dissipation: 0.99W Polarisation: unipolar Gate charge: 18.85nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 45.9A Mounting: SMD Case: U-DFN3030-8 Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4468LFG-7 | Diodes Zetex | Trans MOSFET N-CH 30V 7.62A 8-Pin DFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4468LFG-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 7.62A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V Power Dissipation (Max): 990mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: U-DFN3030-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4468LK3-13 | Diodes Zetex | Trans MOSFET N-CH 30V 9.7A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4468LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 9.7A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 11.6A, 10V Power Dissipation (Max): 1.68W (Ta) Vgs(th) (Max) @ Id: 1.95V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4468LK3-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; Idm: 48A; 1.68W; TO252 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 6.3A On-state resistance: 25mΩ Type of transistor: N-MOSFET Power dissipation: 1.68W Polarisation: unipolar Gate charge: 18.85nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 48A Mounting: SMD Case: TO252 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4468LK3-13 | Diodes Zetex | Trans MOSFET N-CH 30V 9.7A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 85000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4468LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 9.7A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 11.6A, 10V Power Dissipation (Max): 1.68W (Ta) Vgs(th) (Max) @ Id: 1.95V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 15 V | auf Bestellung 2455 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG4468LK3-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; Idm: 48A; 1.68W; TO252 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 6.3A On-state resistance: 25mΩ Type of transistor: N-MOSFET Power dissipation: 1.68W Polarisation: unipolar Gate charge: 18.85nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 48A Mounting: SMD Case: TO252 | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4468LK3-13 | Diodes Inc | Trans MOSFET N-CH 30V 9.7A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4468LK3-13 | Diodes Incorporated | MOSFET ENHANCE MODE MOSFET N Chan 30V/6.3-9.7A | auf Bestellung 2500 Stücke: Lieferzeit 760-774 Tag (e) |
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| DMG4496SSS | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4496SSS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8 Polarisation: unipolar Power dissipation: 1.42W Kind of package: reel; tape Gate charge: 10.2nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: 60A Mounting: SMD Case: SO8 Drain-source voltage: 30V Drain current: 6A On-state resistance: 29mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4496SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4496SSS-13 | Diodes Incorporated | MOSFET MOSFET N-CHANNEL | auf Bestellung 10766 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG4496SSS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8 Polarisation: unipolar Power dissipation: 1.42W Kind of package: reel; tape Gate charge: 10.2nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: 60A Mounting: SMD Case: SO8 Drain-source voltage: 30V Drain current: 6A On-state resistance: 29mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4496SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 2375 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4496SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 10A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V Power Dissipation (Max): 1.42W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 493.5 pF @ 15 V | auf Bestellung 60000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG4496SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 2375 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4496SSS-13 | Diodes Inc | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4496SSS-13 | Diodes INC. | N-канальний ПТ; Udss, В = 30; Id = 10; Ptot, Вт = 1,42; Тип монт. = smd; Ciss, пФ @ Uds, В = 493,5 @ 15; Qg, нКл = 10,2 @ 10 В; Rds = 21,5 мОм @ 10 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 2 В @ 250 мкА; SOICN-8 | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4496SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4496SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 10A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V Power Dissipation (Max): 1.42W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 493.5 pF @ 15 V | auf Bestellung 63228 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG4496SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4496SSSQ-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A Automotive 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4496SSSQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V~30V SO-8 T&R 2.5K | auf Bestellung 1475 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG4496SSSQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V Power Dissipation (Max): 1.42W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 493.5 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4511SK4-13 | Diodes Inc | Trans MOSFET N/P-CH 35V 8.6A/7.8A 5-Pin(4+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4511SK4-13 | Diodes Incorporated | Description: MOSFET N/P-CH 35V 5.3A TO252-4L Packaging: Cut Tape (CT) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.54W Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 5.3A, 5A Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L Part Status: Active | auf Bestellung 17496 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG4511SK4-13 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 35/-35V Mounting: SMD Semiconductor structure: common drain Drain-source voltage: 35/-35V Drain current: 7.8/-8.6A On-state resistance: 0.035/0.045Ω Type of transistor: N/P-MOSFET Power dissipation: 1.54W Polarisation: unipolar Kind of package: reel; tape Kind of transistor: complementary pair Kind of channel: enhanced Gate-source voltage: ±20V Case: TO252-4 Anzahl je Verpackung: 1 Stücke | auf Bestellung 2463 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG4511SK4-13 | Diodes Zetex | Trans MOSFET N/P-CH 35V 8.6A/7.8A 5-Pin(4+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4511SK4-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 V-40V,TO252,2.5K | auf Bestellung 2500 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG4511SK4-13 | Diodes Incorporated | Description: MOSFET N/P-CH 35V 5.3A TO252-4L Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.54W Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 5.3A, 5A Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L Part Status: Active | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG4511SK4-13 | Diodes Zetex | Trans MOSFET N/P-CH 35V 8.6A/7.8A 5-Pin(4+Tab) DPAK T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4511SK4-13 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 35/-35V Mounting: SMD Semiconductor structure: common drain Drain-source voltage: 35/-35V Drain current: 7.8/-8.6A On-state resistance: 0.035/0.045Ω Type of transistor: N/P-MOSFET Power dissipation: 1.54W Polarisation: unipolar Kind of package: reel; tape Kind of transistor: complementary pair Kind of channel: enhanced Gate-source voltage: ±20V Case: TO252-4 | auf Bestellung 2463 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4710SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 8.8A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11.7A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 1.54W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4710SSS-13 | Diodes Inc | Trans MOSFET N-CH 30V 8.8A 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4710SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 8.8A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11.7A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 1.54W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V | auf Bestellung 496 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG4710SSS-13 | Diodes Incorporated | MOSFET MOSFET N-CHANNEL | auf Bestellung 270 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
| DMG4712SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 11.2A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 11.2A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 1.55W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2296 pF @ 15 V | auf Bestellung 443 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| DMG4712SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 11.2A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 11.2A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 1.55W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2296 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4712SSS-13 | Diodes Incorporated | MOSFET MOSFET N-CHANNEL | auf Bestellung 1759 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
| DMG4712SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 11.2A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 11.2A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 1.55W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2296 pF @ 15 V | auf Bestellung 443 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG4800LFG-7 | DIODES INC. | Description: DIODES INC. - DMG4800LFG-7 - Leistungs-MOSFET, n-Kanal, 30 V, 7.44 A, 0.011 ohm, DFN3030, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 7.44A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 940mW Bauform - Transistor: DFN3030 Anzahl der Pins: 8Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.011ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG4800LFG-7 | Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 30V/4.82 - 7.44A | auf Bestellung 10301 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG4800LFG-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 7.44A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.44A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 940mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: U-DFN3030-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.47 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V | auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG4800LFG-7 | Diodes Inc | Trans MOSFET N-CH 30V 7.44A 8-Pin DFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4800LFG-7 | Diodes Zetex | Trans MOSFET N-CH 30V 7.44A 8-Pin DFN EP T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LFG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.82A; Idm: 40A; 940mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.82A Pulsed drain current: 40A Power dissipation: 0.94W Case: U-DFN3030-8 Gate-source voltage: ±25V On-state resistance: 24mΩ Mounting: SMD Gate charge: 9.47nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4800LFG-7 | DIODES INC. | Description: DIODES INC. - DMG4800LFG-7 - Leistungs-MOSFET, n-Kanal, 30 V, 7.44 A, 0.011 ohm, DFN3030, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 7.44A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 940mW Bauform - Transistor: DFN3030 Anzahl der Pins: 8Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.011ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG4800LFG-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 7.44A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.44A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 940mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: U-DFN3030-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.47 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V | auf Bestellung 26474 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG4800LFG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.82A; Idm: 40A; 940mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.82A Pulsed drain current: 40A Power dissipation: 0.94W Case: U-DFN3030-8 Gate-source voltage: ±25V On-state resistance: 24mΩ Mounting: SMD Gate charge: 9.47nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4800LK3-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 27500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LK3-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; 1.71W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.5A Power dissipation: 1.71W Case: TO252 Gate-source voltage: ±25V On-state resistance: 24mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4800LK3-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; 1.71W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.5A Power dissipation: 1.71W Case: TO252 Gate-source voltage: ±25V On-state resistance: 24mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4800LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 10A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 1.71W (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V | auf Bestellung 32500 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG4800LK3-13 | Diodes Incorporated | MOSFET ENHANCE MODE MOSFET N Chan 30V/6.5-10.0A | auf Bestellung 14355 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG4800LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 10A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 1.71W (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V | auf Bestellung 33959 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG4800LK3-13 | Diodes Inc | Trans MOSFET N-CH 30V 10A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4800LSD | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4800LSD-13 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.4A Power dissipation: 1.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 22mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 3444 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG4800LSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.5A 8-Pin SO T/R | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 7.5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.17W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-SO Part Status: Active | auf Bestellung 15004 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG4800LSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.5A 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4800LSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.5A 8-Pin SO T/R | auf Bestellung 1291 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LSD-13 | DIODES INC. | Description: DIODES INC. - DMG4800LSD-13 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 7.5 A, 7.5 A, 0.012 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 7.5A hazardous: false rohsPhthalatesCompliant: YES Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 7.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.012ohm Verlustleistung, p-Kanal: 1.5W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Anzahl der Pins: 8Pin(s) Drain-Source-Durchgangswiderstand, n-Kanal: 0.012ohm productTraceability: No Verlustleistung, n-Kanal: 1.5W Betriebstemperatur, max.: 150°C | auf Bestellung 2792 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG4800LSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.5A 8-Pin SO T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LSD-13 | Diodes Inc | Trans MOSFET N-CH 30V 7.5A 8-Pin SO T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG4800LSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.5A 8-Pin SO T/R | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.5A 8-Pin SO T/R | auf Bestellung 1291 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LSD-13 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.4A Power dissipation: 1.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 22mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 3444 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 7.5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.17W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-SO Part Status: Active | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG4800LSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.5A 8-Pin SO T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LSD-13 | DIODES INC. | Description: DIODES INC. - DMG4800LSD-13 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 7.5 A, 7.5 A, 0.012 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 7.5A hazardous: false rohsPhthalatesCompliant: YES Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 7.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.012ohm Verlustleistung, p-Kanal: 1.5W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Anzahl der Pins: 8Pin(s) Drain-Source-Durchgangswiderstand, n-Kanal: 0.012ohm productTraceability: No Verlustleistung, n-Kanal: 1.5W Betriebstemperatur, max.: 150°C | auf Bestellung 2792 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| DMG4800LSD-13 | Diodes Incorporated | MOSFET Dual N-Ch 30V VDSS 25 Vgss 42A IDM | auf Bestellung 10306 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG4800LSDQ-13 | Diodes Inc | Trans MOSFET N-CH 30V 7.5A Automotive 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4800LSDQ-13 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.4A Power dissipation: 1.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 22mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4800LSDQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 7.5A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.17W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 107500 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG4800LSDQ-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.5A Automotive AEC-Q101 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4800LSDQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V SO-8 T&R 2.5K | auf Bestellung 6184 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG4800LSDQ-13 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.4A Power dissipation: 1.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 22mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4800LSDQ-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.5A Automotive AEC-Q101 8-Pin SO T/R | auf Bestellung 107500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LSDQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 7.5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.17W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 109596 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG4812SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 10.7A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 1.54W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4812SSS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS | auf Bestellung 4960 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||||
| DMG4812SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 8A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 10.7A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 1.54W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4822SSD | ams OSRAM | ams OSRAM | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4822SSD | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4822SSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 62500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4822SSD-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.6A; Idm: 60A; 1.42W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.6A Pulsed drain current: 60A Power dissipation: 1.42W Case: SO8 Gate-source voltage: ±25V On-state resistance: 31mΩ Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4822SSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 10A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.42W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active | auf Bestellung 4390 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG4822SSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 62500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4822SSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4822SSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 10A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.42W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active | auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG4822SSD-13 | Diodes Inc | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4822SSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 2144 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4822SSD-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.6A; Idm: 60A; 1.42W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.6A Pulsed drain current: 60A Power dissipation: 1.42W Case: SO8 Gate-source voltage: ±25V On-state resistance: 31mΩ Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4822SSD-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 1V-40V,SO-8,2.5K | auf Bestellung 13402 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG4822SSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 2144 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4822SSDQ-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R Automotive AEC-Q101 | auf Bestellung 675000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4822SSDQ-13 | Diodes Inc | Trans MOSFET N-CH 30V 10A Automotive 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4822SSDQ-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R Automotive AEC-Q101 | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4822SSDQ-13 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.6A; Idm: 60A; 1.42W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.6A Pulsed drain current: 60A Power dissipation: 1.42W Case: SO8 Gate-source voltage: ±25V On-state resistance: 32.5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4822SSDQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 10A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.42W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 697373 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG4822SSDQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40V | auf Bestellung 3868 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG4822SSDQ-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4822SSDQ-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R Automotive AEC-Q101 | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4822SSDQ-13 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.6A; Idm: 60A; 1.42W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.6A Pulsed drain current: 60A Power dissipation: 1.42W Case: SO8 Gate-source voltage: ±25V On-state resistance: 32.5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4822SSDQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 10A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.42W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 690000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG4822SSDQ-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4932LSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 9.5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.19W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4932LSD-13 | Diodes Incorporated | MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4932LSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 9.5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.19W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4932LSD-13 | Diodes Inc | Trans MOSFET N-CH 30V 9.5A 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4N60SCT | Diodes Incorporated | Description: MOSFET N-CH 600V 4.5A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V Power Dissipation (Max): 113W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4N60SCT | Diodes Incorporated | MOSFET MOSFET BVDSS: 501V-650V | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4N60SJ3 | Diodes Incorporated | MOSFET MOSFET BVDSS: 651V-800V | Produkt ist nicht verfügbar | |||||||||||||||||||
| DMG4N60SJ3 | Diodes Incorporated | Description: MOSFET N-CH 600V 3A TO251 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-251 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 25 V | Produkt ist nicht verfügbar |