Produkte > SQJ

MOSFET Automotive N-Channel 100 V (D-S) 175C MOSFET, 6.3 mO 10V

auf Bestellung 5635 Stücke:

Lieferzeit 14-28 Tag (e)

13+	4.03 EUR
16+	3.35 EUR
100+	2.78 EUR
3000+	2.35 EUR
6000+	2.3 EUR
9000+	2.25 EUR

Mindestbestellmenge: 13

SQJ123ELP

Trans MOSFET P-CH 12V 238A T/R

Produkt ist nicht verfügbar

SQJ123ELP-T1_GE3

Description: AUTOMOTIVE P-CHANNEL 12 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 4.5V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11680 pF @ 6 V

Produkt ist nicht verfügbar

SQJ123ELP-T1_GE3

Description: VISHAY - SQJ123ELP-T1_GE3 - Leistungs-MOSFET, p-Kanal, 12 V, 238 A, 0.0029 ohm, PowerPAK SO-8L, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 12
Dauer-Drainstrom Id: 238
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 375
Gate-Source-Schwellenspannung, max.: 600
Verlustleistung: 375
Bauform - Transistor: PowerPAK SO-8L
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 4
Produktpalette: TrenchFET
Wandlerpolarität: p-Kanal
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 0.0029
Rds(on)-Prüfspannung: 4.5
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.0029
SVHC: No SVHC (19-Jan-2021)

Produkt ist nicht verfügbar

SQJ123ELP-T1_GE3

Description: AUTOMOTIVE P-CHANNEL 12 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 4.5V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11680 pF @ 6 V

auf Bestellung 2630 Stücke:

Lieferzeit 21-28 Tag (e)

7+	4.11 EUR
10+	3.69 EUR
100+	2.97 EUR
500+	2.44 EUR
1000+	2.02 EUR

Mindestbestellmenge: 7

SQJ126EP-T1_GE3

SQJ126EP-T1-GE3 SMD N channel transistors

Produkt ist nicht verfügbar

SQJ128ELP-T1_GE3

Description: AUTOMOTIVE N-CHANNEL 30 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 437A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7315 pF @ 25 V

Produkt ist nicht verfügbar

SQJ128ELP-T1_GE3

MOSFET N-CHANNEL 30-V (D-S) 175C MOSFET

auf Bestellung 8306 Stücke:

Lieferzeit 14-28 Tag (e)

15+	3.61 EUR
17+	3.17 EUR
100+	2.63 EUR
250+	2.56 EUR
500+	2.36 EUR
1000+	2.16 EUR
3000+	1.96 EUR

Mindestbestellmenge: 15

SQJ128ELP-T1_GE3

Description: AUTOMOTIVE N-CHANNEL 30 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 437A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7315 pF @ 25 V

auf Bestellung 2 Stücke:

Lieferzeit 21-28 Tag (e)

SQJ136ELP-T1_GE3

Description: MOSFET N-CH 40V 350A PPAK SO-8

Produkt ist nicht verfügbar

SQJ136ELP-T1_GE3

MOSFET 40-V(D-S)175C MOSFET N-CHANNEL PowerPAK

Produkt ist nicht verfügbar

SQJ136ELP-T1_GE3

Description: MOSFET N-CH 40V 350A PPAK SO-8

Produkt ist nicht verfügbar

SQJ136ELP-T1_GE3

Trans MOSFET N-CH 40V 350A T/R

Produkt ist nicht verfügbar

SQJ136ELP-T1_GE3

Description: VISHAY - SQJ136ELP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 350 A, 0.0009 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 350A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.7V
euEccn: NLR
Verlustleistung: 500W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0009ohm

auf Bestellung 3 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ136ELP-T1_GE3

auf Bestellung 3 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ138ELP

Trans MOSFET N-CH 40V 315A T/R

Produkt ist nicht verfügbar

SQJ138ELP-T1_GE3

Description: VISHAY - SQJ138ELP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 315 A, 0.0012 ohm, PowerPAK SO-8L, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 315A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 500W
Gate-Source-Schwellenspannung, max.: 1.7V
euEccn: NLR
Verlustleistung: 500W
Bauform - Transistor: PowerPAK SO-8L
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 4Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0012ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0012ohm

auf Bestellung 2412 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ138ELP-T1_GE3

Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 315A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6685 pF @ 25 V

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

7+	4.06 EUR
10+	3.63 EUR
100+	2.83 EUR
500+	2.34 EUR
1000+	1.85 EUR

Mindestbestellmenge: 7

SQJ138ELP-T1_GE3

Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 315A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6685 pF @ 25 V

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.71 EUR

Mindestbestellmenge: 3000

SQJ138ELP-T1_GE3

MOSFET N-CHANNEL 40-V (D-S) 175C MOSFET

auf Bestellung 21767 Stücke:

Lieferzeit 14-28 Tag (e)

15+	3.61 EUR
18+	2.94 EUR
100+	2.29 EUR
500+	1.94 EUR
1000+	1.58 EUR
3000+	1.52 EUR
6000+	1.45 EUR

Mindestbestellmenge: 15

SQJ138ELP-T1_GE3

Description: VISHAY - SQJ138ELP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 315 A, 0.0012 ohm, PowerPAK SO-8L, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 315A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.7V
euEccn: NLR
Verlustleistung: 500W
Bauform - Transistor: PowerPAK SO-8L
Anzahl der Pins: 4Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0012ohm

auf Bestellung 2412 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ138EP-T1_GE3

MOSFET N-CHANNEL 40-V (D-S) 175C MOSFET

auf Bestellung 5473 Stücke:

Lieferzeit 14-28 Tag (e)

14+	3.82 EUR
17+	3.15 EUR
100+	2.44 EUR
500+	2.06 EUR
1000+	1.68 EUR
3000+	1.65 EUR
24000+	1.49 EUR

Mindestbestellmenge: 14

SQJ138EP-T1_GE3

Description: MOSFET N-CH 40V 330A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4715 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 2833 Stücke:

Lieferzeit 21-28 Tag (e)

7+	3.8 EUR
10+	3.1 EUR
100+	2.41 EUR
500+	2.05 EUR
1000+	1.67 EUR

Mindestbestellmenge: 7

SQJ138EP-T1_GE3

Description: MOSFET N-CH 40V 330A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4715 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

Produkt ist nicht verfügbar

SQJ140ELP-T1_GE3

Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.5 EUR
6000+	1.42 EUR

Mindestbestellmenge: 3000

SQJ140ELP-T1_GE3

Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.54 EUR
10+	3.16 EUR
100+	2.46 EUR
500+	2.03 EUR
1000+	1.61 EUR

Mindestbestellmenge: 8

SQJ140ELP-T1_GE3

MOSFET N-CHANNEL 40-V (D-S) 175C MOSFET

auf Bestellung 3238 Stücke:

Lieferzeit 14-28 Tag (e)

17+	3.22 EUR
20+	2.63 EUR
100+	2.05 EUR
500+	1.97 EUR
3000+	1.67 EUR
6000+	1.64 EUR
9000+	1.61 EUR

Mindestbestellmenge: 17

SQJ140EP-T1_GE3

MOSFET N-CHANNEL 40-V (D-S) 175C MOSFET

auf Bestellung 2952 Stücke:

Lieferzeit 14-28 Tag (e)

SQJ142ELP

Trans MOSFET N-CH 40V 175A 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ142ELP-T1_GE3

MOSFET Auto N-Ch 40 V (D-S)

auf Bestellung 2733 Stücke:

Lieferzeit 14-28 Tag (e)

SQJ142ELP-T1_GE3

Description: MOSFET N-CH 40V 175A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 10A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3015 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

SQJ142ELP-T1_GE3

Description: MOSFET N-CH 40V 175A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 10A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3015 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 2596 Stücke:

Lieferzeit 21-28 Tag (e)

10+	2.65 EUR
12+	2.18 EUR
100+	1.7 EUR
500+	1.44 EUR
1000+	1.17 EUR

Mindestbestellmenge: 10

SQJ142EP-T1-GE3-J

Vishay MOSFET 40V NCH 175C

Produkt ist nicht verfügbar

SQJ142EP-T1_GE3

MOSFET N-CHANNEL 40-V (D-S) 175C MOSFET

auf Bestellung 37133 Stücke:

Lieferzeit 14-28 Tag (e)

21+	2.59 EUR
25+	2.14 EUR
100+	1.66 EUR
500+	1.41 EUR
1000+	1.15 EUR
3000+	1.08 EUR
6000+	1.03 EUR

Mindestbestellmenge: 21

SQJ142EP-T1_GE3

Trans MOSFET N-CH 40V 167A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ142EP-T1_GE3

Description: VISHAY - SQJ142EP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 167 A, 0.0028 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 167A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 191W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pins
Produktpalette: TrenchFET Gen IV
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0028ohm

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ142EP-T1_GE3

Description: MOSFET N-CH 40V 167A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 167A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 15A, 10V
Power Dissipation (Max): 191W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.07 EUR

Mindestbestellmenge: 3000

SQJ142EP-T1_GE3

Trans MOSFET N-CH 40V 167A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ142EP-T1_GE3

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ142EP-T1_GE3

Description: MOSFET N-CH 40V 167A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 167A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 15A, 10V
Power Dissipation (Max): 191W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 4200 Stücke:

Lieferzeit 21-28 Tag (e)

10+	2.6 EUR
13+	2.12 EUR
100+	1.65 EUR
500+	1.4 EUR
1000+	1.14 EUR

Mindestbestellmenge: 10

SQJ144EP-T1_GE3

Description: VISHAY - SQJ144EP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 130 A, 0.0036 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 130A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 148W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0036ohm
SVHC: Lead (19-Jan-2021)

auf Bestellung 2500 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ144EP-T1_GE3

Description: MOSFET N-CH 40V 130A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 15A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V

auf Bestellung 5980 Stücke:

Lieferzeit 21-28 Tag (e)

11+	2.55 EUR
12+	2.27 EUR
100+	1.77 EUR
500+	1.46 EUR
1000+	1.15 EUR

Mindestbestellmenge: 11

SQJ144EP-T1_GE3

auf Bestellung 2500 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ144EP-T1_GE3

Description: MOSFET N-CH 40V 130A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 15A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V

auf Bestellung 5980 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.08 EUR

Mindestbestellmenge: 3000

SQJ144EP-T1_GE3

MOSFET N-CHANNEL 40-V (D-S) 175C MOSFET

auf Bestellung 5940 Stücke:

Lieferzeit 14-28 Tag (e)

SQJ146ELP

Trans MOSFET N-CH 40V 88A 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ146ELP-T1_GE3

Description: MOSFET N-CH 40V 74A PPAK SO-8

Produkt ist nicht verfügbar

SQJ146ELP-T1_GE3

MOSFET Auto N-Ch 40 V (D-S)

auf Bestellung 32975 Stücke:

Lieferzeit 14-28 Tag (e)

23+	2.32 EUR
27+	1.93 EUR
100+	1.57 EUR
500+	1.24 EUR
1000+	0.99 EUR
3000+	0.9 EUR

Mindestbestellmenge: 23

SQJ146ELP-T1_GE3

Description: MOSFET N-CH 40V 74A PPAK SO-8

Produkt ist nicht verfügbar

SQJ146EP-T1_GE3

MOSFET N-CHANNEL 40-V (D-S) 175C MOSFET

auf Bestellung 9000 Stücke:

Lieferzeit 146-160 Tag (e)

22+	2.39 EUR
25+	2.11 EUR
100+	1.62 EUR
500+	1.28 EUR

Mindestbestellmenge: 22

SQJ146EP-T1_GE3

Description: MOSFET N-CH 40V 75A PPAK SO-8

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

12+	2.21 EUR
14+	1.93 EUR
100+	1.48 EUR
500+	1.17 EUR
1000+	0.94 EUR

Mindestbestellmenge: 12

SQJ146EP-T1_GE3

Description: MOSFET N-CH 40V 75A PPAK SO-8

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.85 EUR

Mindestbestellmenge: 3000

SQJ147ELP-T1_GE3

Trans MOSFET P-CH 40V 90A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 428 Stücke:

Lieferzeit 14-21 Tag (e)

130+	1.21 EUR
131+	1.15 EUR
135+	1.08 EUR
173+	0.81 EUR
250+	0.77 EUR

Mindestbestellmenge: 130

SQJ147ELP-T1_GE3

Trans MOSFET P-CH 40V 90A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ147ELP-T1_GE3

Description: MOSFET P-CH 40V 90A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 10V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 23962 Stücke:

Lieferzeit 21-28 Tag (e)

12+	2.29 EUR
14+	1.86 EUR
100+	1.45 EUR
500+	1.23 EUR
1000+	1 EUR

Mindestbestellmenge: 12

SQJ147ELP-T1_GE3

Trans MOSFET P-CH 40V 90A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ147ELP-T1_GE3

Description: VISHAY - SQJ147ELP-T1_GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 90 A, 0.01 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 90A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 183W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.01ohm
SVHC: Lead (19-Jan-2021)

auf Bestellung 13243 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ147ELP-T1_GE3

MOSFET P-CHANNEL 40-V (D-S) 175C MOSFET

auf Bestellung 148772 Stücke:

Lieferzeit 14-28 Tag (e)

23+	2.32 EUR
28+	1.89 EUR
100+	1.47 EUR
500+	1.25 EUR
1000+	1.02 EUR
3000+	0.96 EUR
6000+	0.91 EUR

Mindestbestellmenge: 23

SQJ147ELP-T1_GE3

Trans MOSFET P-CH 40V 90A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 428 Stücke:

Lieferzeit 14-21 Tag (e)

107+	1.47 EUR
130+	1.16 EUR
131+	1.11 EUR
135+	1.04 EUR
173+	0.78 EUR
250+	0.74 EUR

Mindestbestellmenge: 107

SQJ147ELP-T1_GE3

auf Bestellung 13243 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ147ELP-T1_GE3

Description: MOSFET P-CH 40V 90A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 10V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 21000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.94 EUR
6000+	0.9 EUR
9000+	0.86 EUR

Mindestbestellmenge: 3000

SQJ148EP-T1_GE3

MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified

auf Bestellung 158 Stücke:

Lieferzeit 14-28 Tag (e)

SQJ148EP-T1_GE3

Description: MOSFET N-CH 40V 15A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.6 EUR
6000+	0.57 EUR

Mindestbestellmenge: 3000

SQJ148EP-T1_GE3

Description: MOSFET N-CH 40V 15A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 8555 Stücke:

Lieferzeit 21-28 Tag (e)

17+	1.59 EUR
19+	1.37 EUR
100+	0.95 EUR
500+	0.79 EUR
1000+	0.68 EUR

Mindestbestellmenge: 17

SQJ150EP-T1_GE3

Description: MOSFET N-CH 40V 66A PPAK SO-8

auf Bestellung 3048 Stücke:

Lieferzeit 21-28 Tag (e)

SQJ150EP-T1_GE3

MOSFET N-CHANNEL 40-V (D-S) 175C MOSFET

auf Bestellung 10 Stücke:

Lieferzeit 14-28 Tag (e)

SQJ152ELP

Trans MOSFET N-CH 40V 123A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ152ELP-T1_GE3

Description: MOSFET N-CH 40V 123A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.84 EUR
6000+	0.8 EUR

Mindestbestellmenge: 3000

SQJ152ELP-T1_GE3

MOSFET Auto N-Ch 40 V (D-S)

auf Bestellung 10121 Stücke:

Lieferzeit 14-28 Tag (e)

26+	2.06 EUR
31+	1.68 EUR
100+	1.31 EUR
500+	1.11 EUR
1000+	0.9 EUR
3000+	0.82 EUR
6000+	0.81 EUR

Mindestbestellmenge: 26

SQJ152ELP-T1_GE3

Description: VISHAY - SQJ152ELP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 123 A, 0.004 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 123A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 136W
Gate-Source-Schwellenspannung, max.: 1.7V
euEccn: NLR
Verlustleistung: 136W
Bauform - Transistor: PowerPAK SO
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.004ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.004ohm

auf Bestellung 2760 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ152ELP-T1_GE3

Description: MOSFET N-CH 40V 123A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 6888 Stücke:

Lieferzeit 21-28 Tag (e)

13+	2.03 EUR
16+	1.67 EUR
100+	1.3 EUR
500+	1.1 EUR
1000+	0.9 EUR

Mindestbestellmenge: 13

SQJ152ELP-T1_GE3

Trans MOSFET N-CH 40V 123A 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ152ELP-T1_GE3

Description: VISHAY - SQJ152ELP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 123 A, 0.004 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 123A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.7V
euEccn: NLR
Verlustleistung: 136W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.004ohm

auf Bestellung 2760 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ152EP-T1_GE3

Aluminium Electrolytic Capacitors - Snap In PressFit 400V 1500uF 18K Hrs Life 5pin

Produkt ist nicht verfügbar

SQJ154EP-T1_GE3

Description: VISHAY - SQJ154EP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 243 A, 0.0022 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 243A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 214W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 4Pin(s)
Produktpalette: TrenchFET Gen IV Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0022ohm
SVHC: Boric acid (14-Jun-2023)

auf Bestellung 2623 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ154EP-T1_GE3

Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 243A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 25 V

Produkt ist nicht verfügbar

SQJ154EP-T1_GE3

Trans MOSFET N-CH 40V 243A Automotive AEC-Q101 T/R

Produkt ist nicht verfügbar

SQJ154EP-T1_GE3

MOSFET

auf Bestellung 13449 Stücke:

Lieferzeit 14-28 Tag (e)

20+	2.7 EUR
24+	2.22 EUR
100+	1.73 EUR
500+	1.46 EUR
1000+	1.32 EUR
3000+	1.12 EUR
6000+	1.07 EUR

Mindestbestellmenge: 20

SQJ154EP-T1_GE3

auf Bestellung 2623 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ154EP-T1_GE3

Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 243A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 25 V

auf Bestellung 1632 Stücke:

Lieferzeit 21-28 Tag (e)

9+	3.04 EUR
10+	2.71 EUR
100+	2.11 EUR
500+	1.74 EUR
1000+	1.38 EUR

Mindestbestellmenge: 9

SQJ158EP-T1_GE3

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 45W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Power dissipation: 45W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

SQJ158EP-T1_GE3

Description: MOSFET N-CH 60V 23A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 2840 Stücke:

Lieferzeit 21-28 Tag (e)

16+	1.69 EUR
18+	1.46 EUR
100+	1.01 EUR
500+	0.84 EUR
1000+	0.72 EUR

Mindestbestellmenge: 16

SQJ158EP-T1_GE3

MOSFET N-Channel 60V PowerPAK SO-8L

auf Bestellung 7193 Stücke:

Lieferzeit 14-28 Tag (e)

SQJ158EP-T1_GE3

Description: MOSFET N-CH 60V 23A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

SQJ158EP-T1_GE3

Produkt ist nicht verfügbar

SQJ160EP-T1_GE3

MOSFET N-CHANNEL 60-V (D-S) 175C AEC-Q101

auf Bestellung 6121 Stücke:

Lieferzeit 14-28 Tag (e)

12+	4.5 EUR
14+	3.72 EUR
100+	3.09 EUR
3000+	2.6 EUR
6000+	2.56 EUR
9000+	2.51 EUR

Mindestbestellmenge: 12

SQJ160EP-T1_GE3

N-Channel MOSFET

Produkt ist nicht verfügbar

SQJ164ELP

Trans MOSFET N-CH 60V 75A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ164ELP-T1_GE3

Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

10+	2.83 EUR
11+	2.52 EUR
100+	1.97 EUR
500+	1.63 EUR
1000+	1.28 EUR

Mindestbestellmenge: 10

SQJ164ELP-T1_GE3

MOSFET N-CHANNEL 60-V (D-S) 175C MOSFET

auf Bestellung 26139 Stücke:

Lieferzeit 14-28 Tag (e)

20+	2.7 EUR
24+	2.21 EUR
100+	1.72 EUR
500+	1.46 EUR
1000+	1.19 EUR
3000+	1.12 EUR
6000+	1.06 EUR

Mindestbestellmenge: 20

SQJ164ELP-T1_GE3

SQJ164ELP-T1-GE3 SMD N channel transistors

Produkt ist nicht verfügbar

SQJ164ELP-T1_GE3

Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.2 EUR

Mindestbestellmenge: 3000

SQJ168ELP

SQJ168ELP

Produkt ist nicht verfügbar

SQJ168ELP-T1_GE3

Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 15A, 10V
Power Dissipation (Max): 29.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 8641 Stücke:

Lieferzeit 21-28 Tag (e)

13+	2.03 EUR
15+	1.74 EUR
100+	1.21 EUR
500+	1.01 EUR
1000+	0.86 EUR

Mindestbestellmenge: 13

SQJ168ELP-T1_GE3

Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 15A, 10V
Power Dissipation (Max): 29.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.76 EUR
6000+	0.72 EUR

Mindestbestellmenge: 3000

SQJ168ELP-T1_GE3

MOSFET N-CHANNEL 60-V (D-S) 175C MOSFET

auf Bestellung 2460 Stücke:

Lieferzeit 14-28 Tag (e)

26+	2.06 EUR
29+	1.8 EUR
100+	1.23 EUR
500+	1.1 EUR
3000+	0.94 EUR
6000+	0.92 EUR
9000+	0.9 EUR

Mindestbestellmenge: 26

SQJ170ELP-T1_GE3

Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 10A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 25 V

Produkt ist nicht verfügbar

SQJ170ELP-T1_GE3

SQJ170ELP-T1-GE3 SMD N channel transistors

Produkt ist nicht verfügbar

SQJ170ELP-T1_GE3

MOSFET N-CHANNEL 60-V (D-S) 175C MOSFET

auf Bestellung 10369 Stücke:

Lieferzeit 14-28 Tag (e)

21+	2.51 EUR
26+	2.05 EUR
100+	1.6 EUR
500+	1.54 EUR
3000+	1.3 EUR
6000+	1.28 EUR
9000+	1.26 EUR

Mindestbestellmenge: 21

SQJ170ELP-T1_GE3

Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 10A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 25 V

auf Bestellung 4001 Stücke:

Lieferzeit 21-28 Tag (e)

10+	2.83 EUR
11+	2.53 EUR
100+	1.97 EUR
500+	1.63 EUR
1000+	1.29 EUR

Mindestbestellmenge: 10

SQJ174EP-T1/GE3

MOSFET

Produkt ist nicht verfügbar

SQJ174EP-T1_GE3

Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 293A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6111 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.95 EUR

Mindestbestellmenge: 3000

SQJ174EP-T1_GE3

Trans MOSFET N-CH 60V 293A T/R

Produkt ist nicht verfügbar

SQJ174EP-T1_GE3

MOSFET PowerPAK SO-8L BWL

auf Bestellung 3000 Stücke:

Lieferzeit 210-224 Tag (e)

12+	4.34 EUR
15+	3.61 EUR
100+	2.89 EUR

Mindestbestellmenge: 12

SQJ174EP-T1_GE3

Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 293A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6111 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 5943 Stücke:

Lieferzeit 21-28 Tag (e)

6+	4.34 EUR
10+	3.6 EUR
100+	2.87 EUR
500+	2.42 EUR
1000+	2.06 EUR

Mindestbestellmenge: 6

SQJ174EP-T2-GE3

Vishay MOSFET 60V NCH 175C

Produkt ist nicht verfügbar

SQJ180EP-T1_GE3

MOSFET N-CHANNEL 80-V (D-S) 175C MOSFET

auf Bestellung 273 Stücke:

Lieferzeit 14-28 Tag (e)

11+	5.1 EUR
12+	4.58 EUR
100+	3.69 EUR
500+	3.02 EUR
1000+	2.51 EUR
3000+	2.33 EUR
6000+	2.26 EUR

Mindestbestellmenge: 11

SQJ182EP-T1_GE3

Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)

Produkt ist nicht verfügbar

SQJ182EP-T1_GE3

Trans MOSFET N-CH 80V 210A T/R

Produkt ist nicht verfügbar

SQJ182EP-T1_GE3

Description: VISHAY - SQJ182EP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 80 V, 210 A, 0.0041 ohm, PowerPAK SO, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80
Dauer-Drainstrom Id: 210
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 395
Gate-Source-Schwellenspannung, max.: 2.7
Verlustleistung: 395
Bauform - Transistor: PowerPAK SO
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: TrenchFET Gen IV Series
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0041
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.0041
SVHC: No SVHC (17-Jan-2022)

Produkt ist nicht verfügbar

SQJ182EP-T1_GE3

Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)

Produkt ist nicht verfügbar

SQJ182EP-T1_GE3

MOSFET N-CHANNEL 80-V (D-S) 175C MOSFET

auf Bestellung 36000 Stücke:

Lieferzeit 163-177 Tag (e)

13+	4.29 EUR
14+	3.87 EUR
25+	3.64 EUR
100+	3.12 EUR

Mindestbestellmenge: 13

SQJ182EP-T1_GE3

Produkt ist nicht verfügbar

SQJ184EP-T1_GE3

Description: VISHAY - SQJ184EP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 80 V, 118 A, 0.0075 ohm, PowerPAK SO-8L, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 118A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.5V
euEccn: NLR
Verlustleistung: 234W
Bauform - Transistor: PowerPAK SO-8L
Anzahl der Pins: 8Pin(s)
Produktpalette: PW Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0075ohm
SVHC: No SVHC (17-Jan-2022)

auf Bestellung 8997 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ184EP-T1_GE3

MOSFET

auf Bestellung 4655 Stücke:

Lieferzeit 14-28 Tag (e)

19+	2.81 EUR
23+	2.3 EUR
100+	1.79 EUR
500+	1.51 EUR
1000+	1.29 EUR
3000+	1.09 EUR

Mindestbestellmenge: 19

SQJ184EP-T1_GE3

Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3478 pF @ 25 V

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

9+	3.15 EUR
10+	2.8 EUR
100+	2.19 EUR
500+	1.81 EUR
1000+	1.43 EUR

Mindestbestellmenge: 9

SQJ184EP-T1_GE3

Description: VISHAY - SQJ184EP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 80 V, 118 A, 0.0075 ohm, PowerPAK SO-8L, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 118A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.5V
euEccn: NLR
Verlustleistung: 234W
Bauform - Transistor: PowerPAK SO-8L
Anzahl der Pins: 8Pin(s)
Produktpalette: PW Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0075ohm

auf Bestellung 8997 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ184EP-T1_GE3

Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3478 pF @ 25 V

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.33 EUR

Mindestbestellmenge: 3000

SQJ185ELP-T1/GE3

Produkt ist nicht verfügbar

SQJ185ELP-T1_GE3

MOSFET P-CHANNEL 80-V (D-S) 175C MOSFET

Produkt ist nicht verfügbar

SQJ186ELP

Trans MOSFET N-CH 80V 66A 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 50 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ186ELP

Trans MOSFET N-CH 80V 66A 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 50 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ186ELP-T1-GE3

MOSFET N-CHANNEL 80-V (D-S) 175C MOSF

auf Bestellung 6050 Stücke:

Lieferzeit 379-393 Tag (e)

4+	13.42 EUR
10+	12.04 EUR
100+	9.88 EUR
500+	8.4 EUR
1000+	7.1 EUR
2000+	6.42 EUR

Mindestbestellmenge: 4

SQJ186ELP-T1/GE3

MOSFET

Produkt ist nicht verfügbar

SQJ186ELP-T1_GE3

Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2325 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 2089 Stücke:

Lieferzeit 21-28 Tag (e)

12+	2.18 EUR
15+	1.79 EUR
100+	1.4 EUR
500+	1.18 EUR
1000+	0.96 EUR

Mindestbestellmenge: 12

SQJ186ELP-T1_GE3

Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2325 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

SQJ186ELP-T1_GE3

MOSFET Automotive N-Channel 80V D-S 175C MOSFET PowerPAK SO-8L BWL , 12.5 mO 10V

auf Bestellung 5553 Stücke:

Lieferzeit 14-28 Tag (e)

24+	2.2 EUR
29+	1.81 EUR
100+	1.41 EUR
500+	1.19 EUR
1000+	1.08 EUR
3000+	0.92 EUR
6000+	0.87 EUR

Mindestbestellmenge: 24

SQJ186EP-T1_GE3

Description: VISHAY - SQJ186EP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 80 V, 60 A, 0.011 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80
Dauer-Drainstrom Id: 60
hazardous: false
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 135
Gate-Source-Schwellenspannung, max.: 3
euEccn: NLR
Verlustleistung: 135
Bauform - Transistor: PowerPAK SO
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 5
Produktpalette: TrenchFET
productTraceability: No
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.011
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.011
SVHC: No SVHC (08-Jul-2021)

auf Bestellung 50 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ186EP-T1_GE3

MOSFET N-CHANNEL 80-V (D-S) 175C MOSFET

auf Bestellung 25118 Stücke:

Lieferzeit 14-28 Tag (e)

21+	2.51 EUR
26+	2.05 EUR
100+	1.6 EUR
500+	1.35 EUR
1000+	1.1 EUR
3000+	1.06 EUR
6000+	1.01 EUR

Mindestbestellmenge: 21

SQJ186EP-T1_GE3

Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 25 V

auf Bestellung 2952 Stücke:

Lieferzeit 21-28 Tag (e)

10+	2.81 EUR
11+	2.51 EUR
100+	1.95 EUR
500+	1.61 EUR
1000+	1.27 EUR

Mindestbestellmenge: 10

SQJ186EP-T1_GE3

auf Bestellung 50 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ186EP-T1_GE3

Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 25 V

Produkt ist nicht verfügbar

SQJ200EP-T1_GE3

Description: MOSFET 2N-CH 20V 20A/60A PPAK SO
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W, 48W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 10V
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Part Status: Active

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.33 EUR

Mindestbestellmenge: 3000

SQJ200EP-T1_GE3

Description: MOSFET 2N-CH 20V 20A/60A PPAK SO
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W, 48W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 10V
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Part Status: Active

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

9+	3.15 EUR
10+	2.81 EUR
100+	2.19 EUR
500+	1.81 EUR
1000+	1.43 EUR

Mindestbestellmenge: 9

SQJ200EP-T1_GE3

MOSFET Dual N Ch 20V Vds AEC-Q101 Qualified

auf Bestellung 2940 Stücke:

Lieferzeit 14-28 Tag (e)

19+	2.81 EUR
23+	2.3 EUR
100+	1.79 EUR
500+	1.52 EUR
1000+	1.24 EUR
3000+	1.16 EUR
6000+	1.1 EUR

Mindestbestellmenge: 19

SQJ202EP-T1_GE3

Description: MOSFET 2N-CH 12V 20A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W, 48W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101

Produkt ist nicht verfügbar

SQJ202EP-T1_GE3

MOSFET Dual N Ch 12V Vds AEC-Q101 Qualified

auf Bestellung 2900 Stücke:

Lieferzeit 14-28 Tag (e)

16+	3.38 EUR
19+	2.78 EUR
100+	2.16 EUR
500+	1.83 EUR
1000+	1.49 EUR
3000+	1.4 EUR
6000+	1.33 EUR

Mindestbestellmenge: 16

SQJ202EP-T1_GE3

Trans MOSFET N-CH 12V 20A/60A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ202EP-T1_GE3

Description: MOSFET 2N-CH 12V 20A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W, 48W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101

auf Bestellung 2805 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.33 EUR
10+	2.73 EUR
100+	2.12 EUR
500+	1.8 EUR
1000+	1.47 EUR

Mindestbestellmenge: 8

SQJ202EP-T2_GE3

Description: MOSFET 2N-CH 12V 20A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc), 48W (Tc)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V, 2525pF @ 6V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 54nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 9000 Stücke:

Lieferzeit 21-28 Tag (e)

9+	3.07 EUR
11+	2.51 EUR
100+	1.95 EUR
500+	1.65 EUR
1000+	1.35 EUR

Mindestbestellmenge: 9

SQJ202EP-T2_GE3

MOSFET DUAL N-CHANNEL 12-V (D-S) 175C MOSFETS

Produkt ist nicht verfügbar

SQJ202EP-T2_GE3

Description: MOSFET 2N-CH 12V 20A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc), 48W (Tc)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V, 2525pF @ 6V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 54nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 9000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.27 EUR
6000+	1.21 EUR
9000+	1.15 EUR

Mindestbestellmenge: 3000

SQJ204EP-T1_GE3

Trans MOSFET N-CH 12V 20A/60A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ204EP-T1_GE3

Description: MOSFET 2N-CH 12V 20A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc), 48W (Tc)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 9000 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.43 EUR
10+	2.81 EUR
100+	2.18 EUR
500+	1.85 EUR
1000+	1.51 EUR

Mindestbestellmenge: 8

SQJ204EP-T1_GE3

Description: MOSFET 2N-CH 12V 20A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc), 48W (Tc)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 9000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.42 EUR
6000+	1.35 EUR
9000+	1.29 EUR

Mindestbestellmenge: 3000

SQJ204EP-T1_GE3

MOSFET 12V Vds -/+12V Vgs PowerPAK SO-8L

auf Bestellung 2920 Stücke:

Lieferzeit 14-28 Tag (e)

16+	3.46 EUR
19+	2.83 EUR
100+	2.2 EUR
500+	1.86 EUR
1000+	1.52 EUR
3000+	1.43 EUR
6000+	1.36 EUR

Mindestbestellmenge: 16

SQJ208EP-T1_GE3

MOSFET Dual Nch 40V Vds PowerPAK SO-8L

auf Bestellung 71950 Stücke:

Lieferzeit 598-612 Tag (e)

16+	3.43 EUR
19+	2.81 EUR
100+	2.19 EUR
500+	1.86 EUR
1000+	1.52 EUR
3000+	1.43 EUR

Mindestbestellmenge: 16

SQJ208EP-T1_GE3

Description: MOSFET DUAL N-CH AUTO 40V PP SO-

auf Bestellung 20 Stücke:

Lieferzeit 21-28 Tag (e)

SQJ208EP-T1_GE3

Description: MOSFET DUAL N-CH AUTO 40V PP SO-

Produkt ist nicht verfügbar

SQJ211ELP-T1_GE3

Description: MOSFET P-CH 100V 33.6A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 33.6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 8A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V

Produkt ist nicht verfügbar

SQJ211ELP-T1_GE3

Trans MOSFET P-CH 100V 33.6A T/R

Produkt ist nicht verfügbar

SQJ211ELP-T1_GE3

Description: MOSFET P-CH 100V 33.6A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 33.6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 8A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V

auf Bestellung 486 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.64 EUR
10+	2.98 EUR
100+	2.32 EUR

Mindestbestellmenge: 8

SQJ211ELP-T1_GE3

Trans MOSFET P-CH 100V 33.6A T/R

Produkt ist nicht verfügbar

SQJ211ELP-T1_GE3

Trans MOSFET P-CH 100V 33.6A T/R

Produkt ist nicht verfügbar

SQJ211ELP-T1_GE3

MOSFET P-CHANNEL 100-V (D-S) 175C MOSFET

auf Bestellung 52243 Stücke:

Lieferzeit 14-28 Tag (e)

15+	3.69 EUR
18+	3.04 EUR
100+	2.36 EUR
500+	2 EUR
1000+	1.63 EUR
3000+	1.53 EUR
6000+	1.46 EUR

Mindestbestellmenge: 15

SQJ211ELP-X

MOSFET

Produkt ist nicht verfügbar

SQJ244EP-T1_GE3

MOSFET 40V Vds -/+20V Vgs PowerPAK SO-8L

auf Bestellung 1950 Stücke:

Lieferzeit 430-444 Tag (e)

16+	3.46 EUR
19+	2.89 EUR
100+	2.34 EUR
500+	2.09 EUR
1000+	1.54 EUR
3000+	1.47 EUR

Mindestbestellmenge: 16

SQJ244EP-T1_GE3

Description: MOSFET DUAL N-CHA 40V PPAK SO-8L

Produkt ist nicht verfügbar

SQJ244EP-T1_GE3

Description: MOSFET DUAL N-CHA 40V PPAK SO-8L

auf Bestellung 2960 Stücke:

Lieferzeit 21-28 Tag (e)

SQJ260EP-T1_GE3

Description: MOSFET 2 N-CH 60V POWERPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 54A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V, 2500pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 6A, 10V, 8.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Part Status: Active

auf Bestellung 2976 Stücke:

Lieferzeit 21-28 Tag (e)

7+	3.85 EUR
10+	3.45 EUR
100+	2.69 EUR
500+	2.22 EUR
1000+	1.75 EUR

Mindestbestellmenge: 7

SQJ260EP-T1_GE3

DUAL N-CHANNEL 60-V (D-S) 175C MOSFET

Produkt ist nicht verfügbar

SQJ260EP-T1_GE3

Description: VISHAY - SQJ260EP-T1_GE3 - Dual-MOSFET, TrenchFET®, n-Kanal, 60 V, 60 V, 54 A, 54 A, 0.0155 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 54
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 60
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 54
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0155
Verlustleistung, p-Kanal: 48
Drain-Source-Spannung Vds, n-Kanal: 60
euEccn: NLR
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0155
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 48
SVHC: No SVHC (10-Jun-2022)

auf Bestellung 5997 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ260EP-T1_GE3

Description: MOSFET 2 N-CH 60V POWERPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 54A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V, 2500pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 6A, 10V, 8.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Part Status: Active

Produkt ist nicht verfügbar

SQJ260EP-T1_GE3

MOSFET Dual 60V Vds Asymtrc AEC-Q101 Qualified

auf Bestellung 1116 Stücke:

Lieferzeit 14-28 Tag (e)

SQJ260EP-T1_GE3

Description: VISHAY - SQJ260EP-T1_GE3 - Dual-MOSFET, TrenchFET®, n-Kanal, 60 V, 60 V, 54 A, 54 A, 0.0155 ohm
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60
rohsCompliant: YES
Dauer-Drainstrom Id: 54
Dauer-Drainstrom Id, p-Kanal: 54
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 60
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 54
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0155
Verlustleistung Pd: 48
Gate-Source-Schwellenspannung, max.: 2
Verlustleistung, p-Kanal: 48
Drain-Source-Spannung Vds, n-Kanal: 60
euEccn: NLR
Bauform - Transistor: PowerPAK SO
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0155
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 48
Betriebswiderstand, Rds(on): 0.0155
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
SVHC: No SVHC (10-Jun-2022)

auf Bestellung 5997 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ262EP-T1_GE3

DUAL N-CHANNEL 60-V (D-S) 175C MOSFET

Produkt ist nicht verfügbar

SQJ262EP-T1_GE3

Description: MOSFET 2N-CH 60V 15A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V, 1260pF @ 25V
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 17800 Stücke:

Lieferzeit 21-28 Tag (e)

9+	3.15 EUR
11+	2.57 EUR
100+	2 EUR
500+	1.69 EUR
1000+	1.38 EUR

Mindestbestellmenge: 9

SQJ262EP-T1_GE3

MOSFET Dual 60V Vds Asymtrc AEC-Q101 Qualified

auf Bestellung 2989 Stücke:

Lieferzeit 14-28 Tag (e)

SQJ262EP-T1_GE3

Description: MOSFET 2N-CH 60V 15A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V, 1260pF @ 25V
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 15000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.3 EUR
6000+	1.24 EUR
9000+	1.18 EUR

Mindestbestellmenge: 3000

SQJ264EP

Trans MOSFET N-CH 60V 20A/54A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ264EP-T1_GE3

Description: AUTOMOTIVE DUAL N-CHANNEL 60 V (

auf Bestellung 2886 Stücke:

Lieferzeit 21-28 Tag (e)

SQJ264EP-T1_GE3

Description: AUTOMOTIVE DUAL N-CHANNEL 60 V (

Produkt ist nicht verfügbar

SQJ264EP-T1_GE3

MOSFET DUAL N-CHANNEL 60-V (D-S) 175C MOSFE

auf Bestellung 5950 Stücke:

Lieferzeit 14-28 Tag (e)

14+	3.74 EUR
17+	3.12 EUR
100+	2.49 EUR
250+	2.28 EUR
500+	2.07 EUR
1000+	1.78 EUR
3000+	1.68 EUR

Mindestbestellmenge: 14

SQJ401EP-T1-GE3

Trans MOSFET P-CH 12V 32A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ401EP-T1_GE3

Description: MOSFET P-CH 12V 32A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10015 pF @ 6 V

Produkt ist nicht verfügbar

SQJ401EP-T1_GE3

Trans MOSFET P-CH 12V 32A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ401EP-T1_GE3

MOSFET P-Channel 12V AEC-Q101 Qualified

auf Bestellung 38446 Stücke:

Lieferzeit 14-28 Tag (e)

12+	4.71 EUR
14+	3.93 EUR
100+	3.12 EUR
250+	2.89 EUR
500+	2.6 EUR
1000+	2.23 EUR
3000+	2.12 EUR

Mindestbestellmenge: 12

SQJ401EP-T1_GE3

Trans MOSFET N-CH 12V 32A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ401EP-T1_GE3

Description: MOSFET P-CH 12V 32A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10015 pF @ 6 V

auf Bestellung 2914 Stücke:

Lieferzeit 21-28 Tag (e)

6+	5.07 EUR
10+	4.2 EUR
100+	3.35 EUR
500+	2.83 EUR
1000+	2.4 EUR

Mindestbestellmenge: 6

SQJ402EP-T1"GE3

Description: VISHAY - SQJ402EP-T1"GE3 - N-CHANNEL 100-V (D-S) 175C MOSFET 26AK9936

Produkt ist nicht verfügbar

SQJ402EP-T1-GE3

Trans MOSFET N-CH 100V 32A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ402EP-T1_BE3

MOSFET N-CHANNEL 100-V (D-S) 175C MOSFET

auf Bestellung 2720 Stücke:

Lieferzeit 14-28 Tag (e)

15+	3.67 EUR
18+	3.04 EUR
100+	2.44 EUR
250+	2.23 EUR
500+	2.06 EUR
3000+	1.75 EUR

Mindestbestellmenge: 15

SQJ402EP-T1_BE3

Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10.7A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2286 pF @ 25 V

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.62 EUR
6000+	1.56 EUR

Mindestbestellmenge: 3000

SQJ402EP-T1_BE3

Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10.7A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2286 pF @ 25 V

auf Bestellung 6949 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.59 EUR
10+	2.99 EUR
100+	2.38 EUR
500+	2.01 EUR
1000+	1.71 EUR

Mindestbestellmenge: 8

SQJ402EP-T1_GE3

Trans MOSFET N-CH 100V 32A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO EP T/R

auf Bestellung 612 Stücke:

Lieferzeit 14-21 Tag (e)

101+	1.55 EUR
106+	1.43 EUR
250+	1.32 EUR
500+	1.22 EUR

Mindestbestellmenge: 101

SQJ402EP-T1_GE3

Description: MOSFET N-CH 100V 32A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2289 pF @ 40 V
Qualification: AEC-Q101

auf Bestellung 4599 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.61 EUR
10+	3.02 EUR
100+	2.4 EUR
500+	2.03 EUR
1000+	1.73 EUR

Mindestbestellmenge: 8

SQJ402EP-T1_GE3

Description: VISHAY - SQJ402EP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 32 A, 0.009 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 32A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 83W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.009ohm
SVHC: No SVHC (10-Jun-2022)

auf Bestellung 8453 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ402EP-T1_GE3

Trans MOSFET N-CH 100V 32A Automotive 5-Pin(4+Tab) PowerPAK SO EP T/R

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	1.49 EUR

Mindestbestellmenge: 3000

SQJ402EP-T1_GE3

Trans MOSFET N-CH 100V 32A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ402EP-T1_GE3

Trans MOSFET N-CH 100V 32A Automotive 5-Pin(4+Tab) PowerPAK SO EP T/R

Produkt ist nicht verfügbar

SQJ402EP-T1_GE3

Description: MOSFET N-CH 100V 32A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2289 pF @ 40 V
Qualification: AEC-Q101

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.64 EUR

Mindestbestellmenge: 3000

SQJ402EP-T1_GE3
Produktcode: 155826

Transistoren > MOSFET N-CH

Produkt ist nicht verfügbar

SQJ402EP-T1_GE3

Trans MOSFET N-CH 100V 32A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO EP T/R

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	1.72 EUR

Mindestbestellmenge: 3000

SQJ402EP-T1_GE3

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 83W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

SQJ402EP-T1_GE3

auf Bestellung 8453 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ402EP-T1_GE3

MOSFET 100V 32A 27watt AEC-Q101 Qualified

auf Bestellung 37282 Stücke:

Lieferzeit 14-28 Tag (e)

15+	3.64 EUR
18+	3.04 EUR
100+	2.44 EUR
250+	2.32 EUR
500+	2.03 EUR
1000+	1.74 EUR
3000+	1.65 EUR

Mindestbestellmenge: 15

SQJ402EP-T1_GE3

Produkt ist nicht verfügbar

SQJ402EP-T1_GE3

Trans MOSFET N-CH 100V 32A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO EP T/R

Produkt ist nicht verfügbar

SQJ403BEEP-T1_BE3

Trans MOSFET P-CH 30V 30A T/R Automotive AEC-Q101

Produkt ist nicht verfügbar

SQJ403BEEP-T1_BE3

Description: P-CHANNEL 30-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V

auf Bestellung 2785 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.69 EUR
10+	3.02 EUR
100+	2.35 EUR
500+	1.99 EUR
1000+	1.62 EUR

Mindestbestellmenge: 8

SQJ403BEEP-T1_BE3

MOSFET P-CHANNEL 30-V (D-S) 175C MOSFET

auf Bestellung 25922 Stücke:

Lieferzeit 14-28 Tag (e)

15+	3.69 EUR
18+	3.02 EUR
100+	2.37 EUR
500+	2.01 EUR
1000+	1.64 EUR
3000+	1.54 EUR
6000+	1.47 EUR

Mindestbestellmenge: 15

SQJ403BEEP-T1_BE3

Description: P-CHANNEL 30-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V

Produkt ist nicht verfügbar

SQJ403BEEP-T1_GE3

Description: MOSFET P-CH 30V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 4256 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.69 EUR
10+	3.02 EUR
100+	2.35 EUR
500+	1.99 EUR
1000+	1.62 EUR

Mindestbestellmenge: 8

SQJ403BEEP-T1_GE3

Trans MOSFET P-CH 30V 30A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

112+	1.4 EUR
122+	1.24 EUR
123+	1.19 EUR
138+	1.01 EUR
250+	0.97 EUR
500+	0.85 EUR
1000+	0.77 EUR
3000+	0.73 EUR

Mindestbestellmenge: 112

SQJ403BEEP-T1_GE3

Description: MOSFET P-CH 30V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.53 EUR

Mindestbestellmenge: 3000

SQJ403BEEP-T1_GE3

Trans MOSFET P-CH 30V 30A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

145+	1.08 EUR

Mindestbestellmenge: 145

SQJ403BEEP-T1_GE3

MOSFET P Ch -30Vds 20Vgs AEC-Q101 Qualified

auf Bestellung 8288 Stücke:

Lieferzeit 14-28 Tag (e)

17+	3.12 EUR
20+	2.63 EUR
100+	2.12 EUR
500+	1.83 EUR
1000+	1.58 EUR
3000+	1.5 EUR
6000+	1.45 EUR

Mindestbestellmenge: 17

SQJ403BEEP-T1_GE3

Trans MOSFET P-CH 30V 30A Automotive 5-Pin(4+Tab) PowerPAK SO

Produkt ist nicht verfügbar

SQJ403BEEP-T1_GE3

Trans MOSFET P-CH 30V 30A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO

Produkt ist nicht verfügbar

SQJ403EEP-T1_GE3

Trans MOSFET P-CH 30V 30A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ403EP-T1_GE3

Trans MOSFET P-CH 30V 30A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ403EP-T1_GE3

MOSFET P Ch -30Vds 20Vgs AEC-Q101 Qualified

auf Bestellung 24849 Stücke:

Lieferzeit 14-28 Tag (e)

15+	3.67 EUR
18+	3.04 EUR
100+	2.44 EUR
250+	2.23 EUR
500+	2.03 EUR
1000+	1.74 EUR
3000+	1.65 EUR

Mindestbestellmenge: 15

SQJ403EP-T1_GE3

Description: MOSFET P-CH 30V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101

Produkt ist nicht verfügbar

SQJ403EP-T1_GE3

Trans MOSFET P-CH 30V 30A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ403EP-T1_GE3

Description: MOSFET P-CH 30V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101

Produkt ist nicht verfügbar

SQJ407EP-T1-BE3

MOSFET P-CHANNEL 30-V (D-S) 175C

Produkt ist nicht verfügbar

SQJ407EP-T1_BE3

Description: P-CHANNEL 30-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.4 EUR

Mindestbestellmenge: 3000

SQJ407EP-T1_BE3

MOSFET P-CHANNEL 30-V (D-S) 175C MOSFET

Produkt ist nicht verfügbar

SQJ407EP-T1_BE3

Description: P-CHANNEL 30-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 5950 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.41 EUR
10+	2.78 EUR
100+	2.16 EUR
500+	1.83 EUR
1000+	1.49 EUR

Mindestbestellmenge: 8

SQJ407EP-T1_GE3

Trans MOSFET P-CH 30V 60A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ407EP-T1_GE3

Trans MOSFET P-CH 30V 60A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	1.92 EUR

Mindestbestellmenge: 3000

SQJ407EP-T1_GE3

MOSFET -30V Vds PowerPAK AEC-Q101 Qualified

auf Bestellung 57346 Stücke:

Lieferzeit 14-28 Tag (e)

16+	3.46 EUR
19+	2.83 EUR
100+	2.2 EUR
500+	1.86 EUR
1000+	1.52 EUR
3000+	1.4 EUR
6000+	1.34 EUR

Mindestbestellmenge: 16

SQJ407EP-T1_GE3

Trans MOSFET P-CH 30V 60A Automotive 5-Pin(4+Tab) PowerPAK SO SQJ407EP-T1_GE3 Vishay Siliconix TSQJ407ep
Anzahl je Verpackung: 10 Stücke

auf Bestellung 10 Stücke:

Lieferzeit 7-14 Tag (e)

10+	3.42 EUR

Mindestbestellmenge: 10

SQJ407EP-T1_GE3

Description: MOSFET P-CH 30V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.4 EUR

Mindestbestellmenge: 3000

SQJ407EP-T1_GE3

Trans MOSFET P-CH 30V 60A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	1.07 EUR

Mindestbestellmenge: 3000

SQJ407EP-T1_GE3

Description: VISHAY - SQJ407EP-T1_GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 60 A, 0.0036 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 60A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 68W
Anzahl der Pins: 8Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0036ohm

auf Bestellung 11895 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ407EP-T1_GE3

Trans MOSFET P-CH 30V 60A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	0.89 EUR
6000+	0.82 EUR

Mindestbestellmenge: 3000

SQJ407EP-T1_GE3

Trans MOSFET P-CH 30V 60A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ407EP-T1_GE3

Trans MOSFET P-CH 30V 60A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ407EP-T1_GE3

Trans MOSFET P-CH 30V 60A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	1.36 EUR

Mindestbestellmenge: 3000

SQJ407EP-T1_GE3

auf Bestellung 11895 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ407EP-T1_GE3

Description: MOSFET P-CH 30V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 5769 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.41 EUR
10+	2.78 EUR
100+	2.16 EUR
500+	1.83 EUR
1000+	1.49 EUR

Mindestbestellmenge: 8

SQJ407EP-T1_GE3

Trans MOSFET P-CH 30V 60A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	1.47 EUR

Mindestbestellmenge: 3000

SQJ409EP-T1-BE3

MOSFET P-CHANNEL 40-V (D-S) 175C

Produkt ist nicht verfügbar

SQJ409EP-T1_BE3

Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V

auf Bestellung 2690 Stücke:

Lieferzeit 21-28 Tag (e)

7+	3.74 EUR
10+	3.06 EUR
100+	2.38 EUR
500+	2.02 EUR
1000+	1.64 EUR

Mindestbestellmenge: 7

SQJ409EP-T1_BE3

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -60A; Idm: -150A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -60A
Pulsed drain current: -150A
Power dissipation: 68W
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

SQJ409EP-T1_BE3

Trans MOSFET P-CH 40V 60A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ409EP-T1_BE3

P Channel Trans MOSFET

Produkt ist nicht verfügbar

SQJ409EP-T1_BE3

MOSFET P-CHANNEL 40-V (D-S) 175C MOSFET

auf Bestellung 6279 Stücke:

Lieferzeit 14-28 Tag (e)

16+	3.43 EUR
19+	2.83 EUR
100+	2.21 EUR
500+	1.87 EUR
1000+	1.53 EUR
2500+	1.48 EUR
5000+	1.37 EUR

Mindestbestellmenge: 16

SQJ409EP-T1_BE3

Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V

Produkt ist nicht verfügbar

SQJ409EP-T1_BE3

Produkt ist nicht verfügbar

SQJ409EP-T1_GE3

MOSFET -40V Vds PowerPAK AEC-Q101 Qualified

auf Bestellung 73364 Stücke:

Lieferzeit 14-28 Tag (e)

15+	3.48 EUR
19+	2.86 EUR
100+	2.21 EUR
500+	1.87 EUR
1000+	1.53 EUR
3000+	1.44 EUR
6000+	1.4 EUR

Mindestbestellmenge: 15

SQJ409EP-T1_GE3

Trans MOSFET P-CH 40V 60A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	1.48 EUR

Mindestbestellmenge: 3000

SQJ409EP-T1_GE3

Trans MOSFET P-CH 40V 60A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	0.89 EUR
6000+	0.82 EUR

Mindestbestellmenge: 3000

SQJ409EP-T1_GE3

Description: MOSFET P-CH 40V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 12435 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.46 EUR
10+	2.82 EUR
100+	2.19 EUR
500+	1.86 EUR
1000+	1.51 EUR

Mindestbestellmenge: 8

SQJ409EP-T1_GE3

Trans MOSFET P-CH 40V 60A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	1.07 EUR

Mindestbestellmenge: 3000

SQJ409EP-T1_GE3

Description: VISHAY - SQJ409EP-T1_GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 60 A, 0.0058 ohm, PowerPAK SO-8L, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 60A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 68W
Bauform - Transistor: PowerPAK SO-8L
Anzahl der Pins: 4Pin(s)
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0058ohm
SVHC: No SVHC (10-Jun-2022)

auf Bestellung 38398 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ409EP-T1_GE3

Trans MOSFET P-CH 40V 60A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 83000 Stücke:

Lieferzeit 14-21 Tag (e)

167+	0.94 EUR

Mindestbestellmenge: 167

SQJ409EP-T1_GE3

Description: MOSFET P-CH 40V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.43 EUR
6000+	1.36 EUR

Mindestbestellmenge: 3000

SQJ409EP-T1_GE3

Trans MOSFET P-CH 40V 60A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 83000 Stücke:

Lieferzeit 14-21 Tag (e)

72+	2.2 EUR
88+	1.72 EUR
113+	1.29 EUR
500+	1.04 EUR
1000+	0.81 EUR
3000+	0.72 EUR
6000+	0.65 EUR
9000+	0.63 EUR

Mindestbestellmenge: 72

SQJ409EP-T1_GE3

Trans MOSFET P-CH 40V 60A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ409EP-T1_GE3

Trans MOSFET P-CH 40V 60A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ409EP-T1_GE3

auf Bestellung 38398 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ409EP-T2/GE3

MOSFET

Produkt ist nicht verfügbar

SQJ409EP-T2_GE3

MOSFET P-CHANNEL 40-V (D-S) 175C MOSFET

auf Bestellung 49014 Stücke:

Lieferzeit 14-28 Tag (e)

16+	3.46 EUR
19+	2.86 EUR
100+	2.21 EUR
500+	1.88 EUR
1000+	1.77 EUR
3000+	1.5 EUR

Mindestbestellmenge: 16

SQJ409EP-T2_GE3

Trans MOSFET P-CH 40V 60A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO EP T/R

Produkt ist nicht verfügbar

SQJ409EP-T2_GE3

Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 20429 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.46 EUR
10+	2.82 EUR
100+	2.2 EUR
500+	1.86 EUR
1000+	1.52 EUR

Mindestbestellmenge: 8

SQJ409EP-T2_GE3

Automotive P-Channel

Produkt ist nicht verfügbar

SQJ409EP-T2_GE3

Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 18000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.43 EUR
6000+	1.36 EUR
9000+	1.3 EUR

Mindestbestellmenge: 3000

SQJ410EP-T1_GE3

Description: MOSFET N-CH 30V 32A POWERPAKSO-8

Produkt ist nicht verfügbar

SQJ410EP-T1_GE3

Trans MOSFET N-CH 30V 32A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ410EP-T1_GE3

Description: MOSFET N-CH 30V 32A POWERPAKSO-8

auf Bestellung 2785 Stücke:

Lieferzeit 21-28 Tag (e)

SQJ410EP-T1_GE3

MOSFET N-Channel 30V AEC-Q101 Qualified

auf Bestellung 26205 Stücke:

Lieferzeit 14-28 Tag (e)

10+	5.69 EUR
12+	4.71 EUR
100+	3.77 EUR
250+	3.48 EUR
500+	3.15 EUR
1000+	2.7 EUR
3000+	2.54 EUR

Mindestbestellmenge: 10

SQJ411EP-T1_GE3

Trans MOSFET P-CH 12V 60A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO

Produkt ist nicht verfügbar

SQJ411EP-T1_GE3

Description: MOSFET P-CH 12V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 4.5V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 6 V

Produkt ist nicht verfügbar

SQJ411EP-T1_GE3

MOSFET -12V Vds -60A Id AEC-Q101 Qualified

auf Bestellung 4758 Stücke:

Lieferzeit 14-28 Tag (e)

17+	3.07 EUR
21+	2.54 EUR
100+	1.96 EUR
500+	1.67 EUR
1000+	1.36 EUR
3000+	1.27 EUR
6000+	1.21 EUR

Mindestbestellmenge: 17

SQJ411EP-T1_GE3

Trans MOSFET P-CH 12V 60A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO

Produkt ist nicht verfügbar

SQJ411EP-T1_GE3

Trans MOSFET P-CH 12V 60A Automotive 8-Pin PowerPAK SO EP

Produkt ist nicht verfügbar

SQJ411EP-T1_GE3

Description: MOSFET P-CH 12V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 4.5V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 6 V

auf Bestellung 2994 Stücke:

Lieferzeit 21-28 Tag (e)

9+	3.07 EUR
11+	2.5 EUR
100+	1.94 EUR
500+	1.65 EUR
1000+	1.34 EUR

Mindestbestellmenge: 9

SQJ412EP-T1-GE3

Description: MOSFET N-CH 40V 32A PPAK SO-8

auf Bestellung 1253 Stücke:

Lieferzeit 21-28 Tag (e)

SQJ412EP-T1-GE3

Trans MOSFET N-CH 40V 32A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ412EP-T1-GE3

Description: MOSFET N-CH 40V 32A PPAK SO-8

Produkt ist nicht verfügbar

SQJ412EP-T1-GE3

Description: MOSFET N-CH 40V 32A PPAK SO-8

auf Bestellung 1253 Stücke:

Lieferzeit 21-28 Tag (e)

SQJ412EP-T1_GE3

MOSFET 40V 32A 83W AEC-Q101 Qualified

auf Bestellung 5770 Stücke:

Lieferzeit 14-28 Tag (e)

10+	5.69 EUR
12+	4.71 EUR
100+	3.77 EUR
250+	3.61 EUR
500+	3.17 EUR
1000+	2.73 EUR

Mindestbestellmenge: 10

SQJ412EP-T1_GE3

Description: MOSFET N-CH 40V 32A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10.3A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 20 V
Qualification: AEC-Q101

auf Bestellung 18000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	2.51 EUR
6000+	2.42 EUR
9000+	2.34 EUR

Mindestbestellmenge: 3000

SQJ412EP-T1_GE3

Description: MOSFET N-CH 40V 32A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10.3A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 20 V
Qualification: AEC-Q101

auf Bestellung 24798 Stücke:

Lieferzeit 21-28 Tag (e)

5+	5.59 EUR
10+	4.63 EUR
100+	3.68 EUR
500+	3.12 EUR
1000+	2.64 EUR

Mindestbestellmenge: 5

SQJ412EP-T1_GE3

Trans MOSFET N-CH 40V 32A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ412EP-T2_GE3

Description: N-CHANNEL 40-V (D-S) 175C MOSFET

Produkt ist nicht verfügbar

SQJ412EP-T2_GE3

MOSFET RECOMMENDED ALT 781-SQJ422EP-T1_GE3

Produkt ist nicht verfügbar

SQJ414EP-T1_BE3

Description: N-CHANNEL 30-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 4.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 15000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.82 EUR
6000+	0.78 EUR
9000+	0.72 EUR

Mindestbestellmenge: 3000

SQJ414EP-T1_BE3

MOSFET N-CHANNEL 30-V (D-S) 175C MOSFET

auf Bestellung 3000 Stücke:

Lieferzeit 14-28 Tag (e)

24+	2.2 EUR
27+	1.93 EUR
100+	1.32 EUR
500+	1.1 EUR
1000+	0.88 EUR
3000+	0.82 EUR

Mindestbestellmenge: 24

SQJ414EP-T1_BE3

Description: N-CHANNEL 30-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 4.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 17929 Stücke:

Lieferzeit 21-28 Tag (e)

13+	2.16 EUR
14+	1.87 EUR
100+	1.29 EUR
500+	1.08 EUR
1000+	0.92 EUR

Mindestbestellmenge: 13

SQJ414EP-T1_GE3

Trans MOSFET N-CH 30V 30A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ414EP-T1_GE3

Description: VISHAY - SQJ414EP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 30 A, 0.0098 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 30A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 45W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0098ohm
SVHC: No SVHC (10-Jun-2022)

auf Bestellung 2975 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ414EP-T1_GE3

Description: MOSFET N-CH 30V 30A PPAK SO-8

Produkt ist nicht verfügbar

SQJ414EP-T1_GE3

Trans MOSFET N-CH 30V 30A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ414EP-T1_GE3

Trans MOSFET N-CH 30V 30A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ414EP-T1_GE3

Trans MOSFET N-CH 30V 30A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ414EP-T1_GE3

auf Bestellung 2975 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ414EP-T1_GE3

MOSFET Dual N-Ch 30V AEC-Q101 Qualified

auf Bestellung 3000 Stücke:

Lieferzeit 14-28 Tag (e)

24+	2.2 EUR
28+	1.9 EUR
100+	1.32 EUR
500+	1.1 EUR
1000+	0.94 EUR
3000+	0.83 EUR

Mindestbestellmenge: 24

SQJ414EP-T1_GE3

Description: MOSFET N-CH 30V 30A PPAK SO-8

auf Bestellung 6 Stücke:

Lieferzeit 21-28 Tag (e)

SQJ415EP-T1_BE3

Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

12+	2.29 EUR
14+	1.87 EUR
100+	1.46 EUR
500+	1.23 EUR
1000+	1.01 EUR

Mindestbestellmenge: 12

SQJ415EP-T1_BE3

Trans MOSFET P-CH 40V 30A T/R Automotive AEC-Q101

Produkt ist nicht verfügbar

SQJ415EP-T1_BE3

Trans MOSFET P-CH 40V 30A T/R Automotive AEC-Q101

Produkt ist nicht verfügbar

SQJ415EP-T1_BE3

Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.95 EUR

Mindestbestellmenge: 3000

SQJ415EP-T1_GE3

Description: MOSFET P-CH 40V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 7855 Stücke:

Lieferzeit 21-28 Tag (e)

12+	2.29 EUR
14+	1.87 EUR
100+	1.46 EUR
500+	1.23 EUR
1000+	1.01 EUR

Mindestbestellmenge: 12

SQJ415EP-T1_GE3

Description: VISHAY - SQJ415EP-T1_GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 30 A, 0.0115 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 30A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 45W
Anzahl der Pins: 8Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0115ohm

auf Bestellung 6190 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ415EP-T1_GE3

MOSFET -40V Vds; +/-20V Vgs PowerPAK SO-8L

auf Bestellung 4236 Stücke:

Lieferzeit 14-28 Tag (e)

23+	2.32 EUR
28+	1.91 EUR
100+	1.48 EUR
500+	1.26 EUR
1000+	1.02 EUR
3000+	0.96 EUR
6000+	0.92 EUR

Mindestbestellmenge: 23

SQJ415EP-T1_GE3

Trans MOSFET P-CH 40V 30A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 3001 Stücke:

Lieferzeit 14-21 Tag (e)

107+	1.47 EUR
129+	1.17 EUR
130+	1.12 EUR
135+	1.04 EUR
165+	0.81 EUR
250+	0.77 EUR
500+	0.63 EUR
1000+	0.48 EUR
3000+	0.45 EUR

Mindestbestellmenge: 107

SQJ415EP-T1_GE3

Description: MOSFET P-CH 40V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.95 EUR

Mindestbestellmenge: 3000

SQJ415EP-T1_GE3

Trans MOSFET P-CH 40V 30A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ415EP-T1_GE3

Trans MOSFET P-CH 40V 30A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 3001 Stücke:

Lieferzeit 14-21 Tag (e)

232+	0.67 EUR

Mindestbestellmenge: 232

SQJ415EP-T1_GE3

auf Bestellung 6190 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ416EP-T1-BE3

MOSFET N-CHANNEL 100-V (D-S) 175C

Produkt ist nicht verfügbar

SQJ416EP-T1_BE3

Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V

Produkt ist nicht verfügbar

SQJ416EP-T1_BE3

MOSFET N-CHANNEL 100-V (D-S) 175C MOSFET

Produkt ist nicht verfügbar

SQJ416EP-T1_BE3

Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V

Produkt ist nicht verfügbar

SQJ416EP-T1_GE3

MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified

auf Bestellung 53243 Stücke:

Lieferzeit 14-28 Tag (e)

23+	2.27 EUR
28+	1.87 EUR
100+	1.45 EUR
500+	1.23 EUR
1000+	1 EUR
3000+	0.89 EUR

Mindestbestellmenge: 23

SQJ416EP-T1_GE3

Trans MOSFET N-CH 100V 27A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ416EP-T1_GE3

Description: MOSFET N-CH 100V 27A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V

auf Bestellung 8 Stücke:

Lieferzeit 21-28 Tag (e)

SQJ416EP-T1_GE3

Trans MOSFET N-CH 100V 27A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ416EP-T1_GE3

Description: MOSFET N-CH 100V 27A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V

Produkt ist nicht verfügbar

SQJ416EP-T1_GE3

Trans MOSFET N-CH 100V 27A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ418EP-T1
Produktcode: 147924

Transistoren > MOSFET N-CH

Produkt ist nicht verfügbar

SQJ418EP-T1_BE3

Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V

auf Bestellung 9000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.12 EUR
6000+	1.06 EUR
9000+	1.02 EUR

Mindestbestellmenge: 3000

SQJ418EP-T1_BE3

Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V

auf Bestellung 9000 Stücke:

Lieferzeit 21-28 Tag (e)

10+	2.7 EUR
12+	2.21 EUR
100+	1.72 EUR
500+	1.46 EUR
1000+	1.19 EUR

Mindestbestellmenge: 10

SQJ418EP-T1_GE3

Description: VISHAY - SQJ418EP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 48 A, 0.011 ohm, PowerPAK SO, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100
Dauer-Drainstrom Id: 48
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 68
Bauform - Transistor: PowerPAK SO
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: TrenchFET
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.011
Betriebstemperatur, max.: 175
Schwellenspannung Vgs: 3
SVHC: No SVHC (19-Jan-2021)

Produkt ist nicht verfügbar

SQJ418EP-T1_GE3

Trans MOSFET N-CH 100V 48A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ418EP-T1_GE3

Description: MOSFET N-CH 100V 48A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.12 EUR

Mindestbestellmenge: 3000

SQJ418EP-T1_GE3

Produkt ist nicht verfügbar

SQJ418EP-T1_GE3

MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified

auf Bestellung 48576 Stücke:

Lieferzeit 14-28 Tag (e)

19+	2.76 EUR
24+	2.25 EUR
100+	1.75 EUR
500+	1.48 EUR
1000+	1.21 EUR
3000+	1.14 EUR
6000+	1.1 EUR

Mindestbestellmenge: 19

SQJ418EP-T1_GE3

Trans MOSFET N-CH 100V 48A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ418EP-T1_GE3

Trans MOSFET N-CH 100V 48A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ418EP-T1_GE3

Description: MOSFET N-CH 100V 48A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 5610 Stücke:

Lieferzeit 21-28 Tag (e)

10+	2.7 EUR
12+	2.21 EUR
100+	1.72 EUR
500+	1.46 EUR
1000+	1.19 EUR

Mindestbestellmenge: 10

SQJ418EP-T2_GE3

MOSFET 100V Vds 20V Vgs PowerPAK SO-8L

Produkt ist nicht verfügbar

SQJ418EP-T2_GE3

N-CHANNEL 100-V (D-S) 175C MOSFET

Produkt ist nicht verfügbar

SQJ420EP-T1_BE3

Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 5774 Stücke:

Lieferzeit 21-28 Tag (e)

13+	2.03 EUR
16+	1.65 EUR
100+	1.28 EUR
500+	1.09 EUR
1000+	0.88 EUR

Mindestbestellmenge: 13

SQJ420EP-T1_BE3

Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.83 EUR

Mindestbestellmenge: 3000

SQJ420EP-T1_GE3

Description: MOSFET N-CH 40V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 1168 Stücke:

Lieferzeit 21-28 Tag (e)

13+	2.03 EUR
16+	1.65 EUR
100+	1.28 EUR
500+	1.09 EUR
1000+	0.88 EUR

Mindestbestellmenge: 13

SQJ420EP-T1_GE3

Automotive N-Channel 40 V D-S 175 C MOSFET

Produkt ist nicht verfügbar

SQJ420EP-T1_GE3

Description: MOSFET N-CH 40V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

SQJ420EP-T1_GE3

MOSFET 40V Vds -/+20V Vgs AEC-Q101 Qualified

auf Bestellung 29013 Stücke:

Lieferzeit 14-28 Tag (e)

26+	2.06 EUR
32+	1.67 EUR
100+	1.3 EUR
500+	1.1 EUR
1000+	0.9 EUR

Mindestbestellmenge: 26

SQJ422EP-T1_BE3

Trans MOSFET N-CH 40V 75A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ422EP-T1_BE3

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 75A; Idm: 300A; 83W
Kind of package: reel; tape
On-state resistance: 8.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 0.1µC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: SMD
Drain-source voltage: 40V
Drain current: 75A
Anzahl je Verpackung: 3000 Stücke

Produkt ist nicht verfügbar

SQJ422EP-T1_BE3

Description: MOSFET N-CH 40V 75A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 20 V

auf Bestellung 8873 Stücke:

Lieferzeit 21-28 Tag (e)

7+	3.93 EUR
10+	3.21 EUR
100+	2.49 EUR
500+	2.11 EUR
1000+	1.72 EUR

Mindestbestellmenge: 7

SQJ422EP-T1_BE3

MOSFET N-CHANNEL 40-V (D-S) 175C MOSFET

auf Bestellung 9573 Stücke:

Lieferzeit 14-28 Tag (e)

14+	3.98 EUR
16+	3.28 EUR
100+	2.54 EUR
500+	2.15 EUR
1000+	1.75 EUR
3000+	1.65 EUR
6000+	1.57 EUR

Mindestbestellmenge: 14

SQJ422EP-T1_BE3

Produkt ist nicht verfügbar

SQJ422EP-T1_BE3

Description: MOSFET N-CH 40V 75A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 20 V

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.62 EUR
6000+	1.54 EUR

Mindestbestellmenge: 3000

SQJ422EP-T1_BE3

Trans MOSFET N-CH 40V 75A 5-Pin(4+Tab) PowerPAK SO T/R Automotive AEC-Q101

Produkt ist nicht verfügbar

SQJ422EP-T1_GE3

Description: MOSFET N-CH 40V 74A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 20 V
Qualification: AEC-Q101

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.74 EUR

Mindestbestellmenge: 3000

SQJ422EP-T1_GE3

MOSFET -40V 75A 83W AEC-Q101 Qualified

auf Bestellung 4047 Stücke:

Lieferzeit 14-28 Tag (e)

14+	3.93 EUR
16+	3.25 EUR
100+	2.6 EUR
250+	2.49 EUR
500+	2.17 EUR
1000+	1.85 EUR
3000+	1.77 EUR

Mindestbestellmenge: 14

SQJ422EP-T1_GE3

Trans MOSFET N-CH 40V 75A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO EP T/R

auf Bestellung 5568 Stücke:

Lieferzeit 14-21 Tag (e)

63+	2.49 EUR
76+	1.91 EUR
78+	1.8 EUR
100+	1.42 EUR
250+	1.26 EUR
500+	1.03 EUR
1000+	0.88 EUR
3000+	0.86 EUR

Mindestbestellmenge: 63

SQJ422EP-T1_GE3

Description: VISHAY - SQJ422EP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 75 A, 0.0028 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 75A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Verlustleistung Pd: 83W
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 83W
Bauform - Transistor: PowerPAK SO
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0028ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0028ohm
SVHC: No SVHC (10-Jun-2022)

auf Bestellung 5680 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ422EP-T1_GE3

Trans MOSFET N-CH 40V 75A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO EP T/R

auf Bestellung 5568 Stücke:

Lieferzeit 14-21 Tag (e)

124+	1.27 EUR

Mindestbestellmenge: 124

SQJ422EP-T1_GE3

Trans MOSFET N-CH 40V 75A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ422EP-T1_GE3

Description: MOSFET N-CH 40V 74A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 4848 Stücke:

Lieferzeit 21-28 Tag (e)

7+	3.85 EUR
10+	3.2 EUR
100+	2.55 EUR
500+	2.16 EUR
1000+	1.83 EUR

Mindestbestellmenge: 7

SQJ422EP-T1_GE3

Description: VISHAY - SQJ422EP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 75 A, 0.0028 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 75A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 83W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0028ohm
SVHC: No SVHC (10-Jun-2022)

auf Bestellung 5680 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ423EP-T1_BE3

MOSFET P-CHANNEL 40-V (D-S) 175C MOSFET

auf Bestellung 6000 Stücke:

Lieferzeit 14-28 Tag (e)

21+	2.59 EUR
25+	2.13 EUR
100+	1.66 EUR
500+	1.11 EUR

Mindestbestellmenge: 21

SQJ423EP-T1_BE3

Trans MOSFET P-CH 40V 55A T/R Automotive AEC-Q101

Produkt ist nicht verfügbar

SQJ423EP-T1_GE3

Trans MOSFET P-CH 40V 55A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ423EP-T1_GE3

Description: MOSFET P-CH 40V 55A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 15000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.07 EUR
6000+	1.02 EUR
9000+	0.97 EUR

Mindestbestellmenge: 3000

SQJ423EP-T1_GE3

MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified

auf Bestellung 111632 Stücke:

Lieferzeit 14-28 Tag (e)

20+	2.6 EUR
25+	2.13 EUR
100+	1.66 EUR
500+	1.41 EUR
1000+	1.15 EUR
3000+	1.08 EUR
6000+	1.03 EUR

Mindestbestellmenge: 20

SQJ423EP-T1_GE3

Description: MOSFET P-CH 40V 55A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 17289 Stücke:

Lieferzeit 21-28 Tag (e)

10+	2.6 EUR
13+	2.12 EUR
100+	1.65 EUR
500+	1.4 EUR
1000+	1.14 EUR

Mindestbestellmenge: 10

SQJ431AEP-T1-BE3

MOSFET P-CHANNEL 200-V (D-S) 175C

Produkt ist nicht verfügbar

SQJ431AEP-T1_BE3

Description: P-CHANNEL 200-V (D-S) 175C MOSFE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 3.8A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 5332 Stücke:

Lieferzeit 21-28 Tag (e)

7+	3.72 EUR
10+	3.11 EUR
100+	2.47 EUR
500+	2.09 EUR
1000+	1.78 EUR

Mindestbestellmenge: 7

SQJ431AEP-T1_BE3

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -200V; -9.4A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -9.4A
Pulsed drain current: -60A
Power dissipation: 68W
Gate-source voltage: ±20V
On-state resistance: 763mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke

Produkt ist nicht verfügbar

SQJ431AEP-T1_BE3

Trans MOSFET P-CH 200V 9.4A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ431AEP-T1_BE3

Produkt ist nicht verfügbar

SQJ431AEP-T1_BE3

Description: P-CHANNEL 200-V (D-S) 175C MOSFE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 3.8A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.69 EUR

Mindestbestellmenge: 3000

SQJ431AEP-T1_BE3

P-Channel Power MOSFET

Produkt ist nicht verfügbar

SQJ431AEP-T1_GE3

Trans MOSFET P-CH 200V 9.4A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO EP

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	1.15 EUR

Mindestbestellmenge: 3000

SQJ431AEP-T1_GE3

Description: MOSFET P-CH 200V 9.4A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 3.8A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

Produkt ist nicht verfügbar

SQJ431AEP-T1_GE3

Trans MOSFET P-CH 200V 9.4A Automotive 5-Pin(4+Tab) PowerPAK SO EP

auf Bestellung 12000 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ431AEP-T1_GE3

Description: VISHAY - SQJ431AEP-T1_GE3 - Leistungs-MOSFET, p-Kanal, 200 V, 9.4 A, 0.254 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 200V
rohsCompliant: YES
Dauer-Drainstrom Id: 9.4A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 68W
Anzahl der Pins: 8Pin(s)
productTraceability: No
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.254ohm

auf Bestellung 1744 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ431AEP-T1_GE3

MOSFET -200V Vds 20V Vgs PowerPAK SO-8L

auf Bestellung 28482 Stücke:

Lieferzeit 14-28 Tag (e)

14+	3.87 EUR
17+	3.17 EUR
100+	2.63 EUR
250+	2.54 EUR
500+	2.32 EUR
1000+	1.85 EUR
3000+	1.74 EUR

Mindestbestellmenge: 14

SQJ431AEP-T1_GE3

Trans MOSFET P-CH 200V 9.4A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO EP

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	1.15 EUR

Mindestbestellmenge: 3000

SQJ431AEP-T1_GE3

Description: MOSFET P-CH 200V 9.4A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 3.8A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

Produkt ist nicht verfügbar

SQJ431AEP-T1_GE3

Trans MOSFET P-CH 200V 9.4A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO EP

auf Bestellung 36000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	1.31 EUR

Mindestbestellmenge: 3000

SQJ431AEP-T1_GE3

auf Bestellung 1744 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ431AEP-T1_GE3

Trans MOSFET P-CH 200V 9.4A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO EP

Produkt ist nicht verfügbar

SQJ431AEP-T2-GE3

Vishay MOSFET 200V PCH 175C

Produkt ist nicht verfügbar

SQJ431EP-T1-GE3

Trans MOSFET P-CH 200V 12A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ431EP-T1-GE3

MOSFET RECOMMENDED ALT SQJ431EP-T1_GE3

Produkt ist nicht verfügbar

SQJ431EP-T1_GE3

Trans MOSFET P-CH 200V 12A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 9000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	2.01 EUR

Mindestbestellmenge: 3000

SQJ431EP-T1_GE3

Description: VISHAY - SQJ431EP-T1_GE3 - Leistungs-MOSFET, p-Kanal, 200 V, 12 A, 0.178 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 200V
rohsCompliant: YES
Dauer-Drainstrom Id: 12A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 83W
Anzahl der Pins: 8Pin(s)
productTraceability: No
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.178ohm

auf Bestellung 19768 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ431EP-T1_GE3

MOSFET -200v -12A 83W AEC-Q101 Qualified

auf Bestellung 56827 Stücke:

Lieferzeit 14-28 Tag (e)

12+	4.58 EUR
14+	3.8 EUR
100+	3.02 EUR
250+	2.78 EUR
500+	2.54 EUR
1000+	2.18 EUR
3000+	2.07 EUR

Mindestbestellmenge: 12

SQJ431EP-T1_GE3

Trans MOSFET P-CH 200V 12A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 8 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ431EP-T1_GE3

Description: MOSFET P-CH 200V 12A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 213mOhm @ 1A, 4V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 14941 Stücke:

Lieferzeit 21-28 Tag (e)

6+	4.55 EUR
10+	3.79 EUR
100+	3.02 EUR
500+	2.55 EUR
1000+	2.17 EUR

Mindestbestellmenge: 6

SQJ431EP-T1_GE3

Trans MOSFET P-CH 200V 12A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	1.66 EUR

Mindestbestellmenge: 3000

SQJ431EP-T1_GE3

Trans MOSFET P-CH 200V 12A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ431EP-T1_GE3

Trans MOSFET P-CH 200V 12A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	1.3 EUR

Mindestbestellmenge: 3000

SQJ431EP-T1_GE3

auf Bestellung 19768 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ431EP-T1_GE3

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -12A; Idm: -40A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -12A
Pulsed drain current: -40A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 527mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke

Produkt ist nicht verfügbar

SQJ431EP-T1_GE3

Description: MOSFET P-CH 200V 12A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 213mOhm @ 1A, 4V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 12000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	2.06 EUR
6000+	1.98 EUR
9000+	1.91 EUR

Mindestbestellmenge: 3000

SQJ431EP-T1_GE3

Trans MOSFET P-CH 200V 12A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 8 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ431EP-T1_GE3

Produkt ist nicht verfügbar

SQJ431EP-T2_GE3

Description: MOSFET P-CH 200V 12A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 213mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

SQJ431EP-T2_GE3

MOSFET RECOMMENDED ALT SQJ431AEP-T1_GE3

Produkt ist nicht verfügbar

SQJ431EPT1-GE3

auf Bestellung 170 Stücke:

Lieferzeit 21-28 Tag (e)

SQJ433EP-T1-BE3

MOSFET P-CHANNEL 30-V (D-S) 175C

Produkt ist nicht verfügbar

SQJ433EP-T1_BE3

MOSFET P-CHANNEL 30-V (D-S) 175C MOSFET

Produkt ist nicht verfügbar

SQJ433EP-T1_BE3

Description: P-CHANNEL 30-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 16A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4877 pF @ 15 V
Qualification: AEC-Q101

auf Bestellung 5997 Stücke:

Lieferzeit 21-28 Tag (e)

9+	3.22 EUR
10+	2.64 EUR
100+	2.05 EUR
500+	1.74 EUR
1000+	1.42 EUR

Mindestbestellmenge: 9

SQJ433EP-T1_BE3

Description: P-CHANNEL 30-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 16A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4877 pF @ 15 V
Qualification: AEC-Q101

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.33 EUR

Mindestbestellmenge: 3000

SQJ433EP-T1_GE3

Trans MOSFET P-CH 30V 75A Automotive 5-Pin(4+Tab) PowerPAK SO

Produkt ist nicht verfügbar

SQJ433EP-T1_GE3

Trans MOSFET P-CH 30V 75A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ433EP-T1_GE3

Description: MOSFET P-CH 30V 75A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 16A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4877 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 5524 Stücke:

Lieferzeit 21-28 Tag (e)

9+	3.22 EUR
10+	2.64 EUR
100+	2.05 EUR
500+	1.74 EUR
1000+	1.42 EUR

Mindestbestellmenge: 9

SQJ433EP-T1_GE3

MOSFET P Ch -30Vds 20Vgs AEC-Q101 Qualified

auf Bestellung 2843 Stücke:

Lieferzeit 14-28 Tag (e)

16+	3.28 EUR
20+	2.68 EUR
100+	2.09 EUR
500+	1.77 EUR
1000+	1.44 EUR
3000+	1.35 EUR
6000+	1.29 EUR

Mindestbestellmenge: 16

SQJ433EP-T1_GE3

Description: MOSFET P-CH 30V 75A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 16A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4877 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.33 EUR

Mindestbestellmenge: 3000

SQJ443EP-T1-GE3

Trans MOSFET P-CH 40V 40A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ443EP-T1_BE3

Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 18A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 20 V

Produkt ist nicht verfügbar

SQJ443EP-T1_BE3

MOSFET P-CHANNEL 40-V (D-S) 175C MOSFET

auf Bestellung 26870 Stücke:

Lieferzeit 14-28 Tag (e)

16+	3.28 EUR
20+	2.68 EUR
100+	2.09 EUR
500+	1.93 EUR
3000+	1.64 EUR

Mindestbestellmenge: 16

SQJ443EP-T1_BE3

SQJ443EP-T1_BE3

Produkt ist nicht verfügbar

SQJ443EP-T1_BE3

Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 18A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 20 V

Produkt ist nicht verfügbar

SQJ443EP-T1_BE3

Trans MOSFET P-CH 40V 40A 5-Pin(4+Tab) PowerPAK SO T/R Automotive AEC-Q101

Produkt ist nicht verfügbar

SQJ443EP-T1_GE3

Trans MOSFET P-CH 40V 40A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ443EP-T1_GE3

Trans MOSFET P-CH 40V 40A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 2960 Stücke:

Lieferzeit 14-21 Tag (e)

98+	1.61 EUR
112+	1.35 EUR
113+	1.29 EUR
114+	1.23 EUR
137+	0.98 EUR
250+	0.93 EUR
500+	0.78 EUR
1000+	0.64 EUR

Mindestbestellmenge: 98

SQJ443EP-T1_GE3

Description: MOSFET P-CH 40V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 18A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 20 V

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.46 EUR

Mindestbestellmenge: 3000

SQJ443EP-T1_GE3

Trans MOSFET P-CH 40V 40A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ443EP-T1_GE3

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -23A; 28W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -23A
Power dissipation: 28W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

SQJ443EP-T1_GE3

Trans MOSFET P-CH 40V 40A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 2960 Stücke:

Lieferzeit 14-21 Tag (e)

165+	0.95 EUR

Mindestbestellmenge: 165

SQJ443EP-T1_GE3

Description: MOSFET P-CH 40V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 18A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 20 V

auf Bestellung 4987 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.54 EUR
10+	2.88 EUR
100+	2.24 EUR
500+	1.9 EUR
1000+	1.55 EUR

Mindestbestellmenge: 8

SQJ443EP-T1_GE3

MOSFET P-Channel 40V AEC-Q101 Qualified

auf Bestellung 59969 Stücke:

Lieferzeit 14-28 Tag (e)

16+	3.25 EUR
20+	2.65 EUR
100+	2.09 EUR
500+	1.77 EUR
1000+	1.44 EUR
3000+	1.35 EUR
6000+	1.29 EUR

Mindestbestellmenge: 16

SQJ443EP-T1_GE3

Produkt ist nicht verfügbar

SQJ443EP-T2_GE3

Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 18A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 9000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.05 EUR
6000+	1 EUR
9000+	0.95 EUR

Mindestbestellmenge: 3000

SQJ443EP-T2_GE3

MOSFET P-CHANNEL 40-V (D-S) 175C MOSFET

auf Bestellung 2929 Stücke:

Lieferzeit 14-28 Tag (e)

21+	2.56 EUR
25+	2.11 EUR
100+	1.64 EUR
500+	1.39 EUR
1000+	1.12 EUR
3000+	1.09 EUR

Mindestbestellmenge: 21

SQJ443EP-T2_GE3

Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 18A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 11601 Stücke:

Lieferzeit 21-28 Tag (e)

11+	2.52 EUR
13+	2.07 EUR
100+	1.61 EUR
500+	1.36 EUR
1000+	1.11 EUR

Mindestbestellmenge: 11

SQJ444EP-T1_BE3

Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

9+	3.04 EUR
11+	2.48 EUR
100+	1.93 EUR
500+	1.64 EUR
1000+	1.33 EUR

Mindestbestellmenge: 9

SQJ444EP-T1_BE3

Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.25 EUR
6000+	1.19 EUR

Mindestbestellmenge: 3000

SQJ444EP-T1_GE3

MOSFET N-Ch 40V Vds AEC-Q101 Qualified

auf Bestellung 2840 Stücke:

Lieferzeit 14-28 Tag (e)

SQJ444EP-T1_GE3

Trans MOSFET N-CH 40V 60A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 5700 Stücke:

Lieferzeit 14-21 Tag (e)

175+	0.89 EUR

Mindestbestellmenge: 175

SQJ444EP-T1_GE3

Description: VISHAY - SQJ444EP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 60 A, 0.0026 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 60A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 68W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0026ohm
SVHC: No SVHC (10-Jun-2022)

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ444EP-T1_GE3

Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 3878 Stücke:

Lieferzeit 21-28 Tag (e)

9+	3.04 EUR
11+	2.48 EUR
100+	1.93 EUR
500+	1.64 EUR
1000+	1.33 EUR

Mindestbestellmenge: 9

SQJ444EP-T1_GE3

Trans MOSFET N-CH 40V 60A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ444EP-T1_GE3

MOSFET N-Ch 40V Vds AEC-Q101 Qualified

auf Bestellung 47838 Stücke:

Lieferzeit 14-28 Tag (e)

17+	3.07 EUR
21+	2.54 EUR
100+	1.96 EUR
500+	1.67 EUR
1000+	1.36 EUR
3000+	1.21 EUR
9000+	1.2 EUR

Mindestbestellmenge: 17

SQJ444EP-T1_GE3

Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.25 EUR

Mindestbestellmenge: 3000

SQJ444EP-T1_GE3

Trans MOSFET N-CH 40V 60A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 5700 Stücke:

Lieferzeit 14-21 Tag (e)

111+	1.41 EUR
126+	1.2 EUR
127+	1.14 EUR
128+	1.09 EUR
147+	0.91 EUR
250+	0.87 EUR
500+	0.75 EUR
1000+	0.64 EUR
3000+	0.6 EUR

Mindestbestellmenge: 111

SQJ444EP-T1_GE3

Description: VISHAY - SQJ444EP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 60 A, 0.0026 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 60A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Verlustleistung Pd: 68W
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 68W
Bauform - Transistor: PowerPAK SO
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0026ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0026ohm
SVHC: No SVHC (10-Jun-2022)

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ446EP-T1_BE3

Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 14A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4220 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 5980 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.35 EUR
10+	2.74 EUR
100+	2.13 EUR
500+	1.8 EUR
1000+	1.47 EUR

Mindestbestellmenge: 8

SQJ446EP-T1_BE3

Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 14A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4220 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.38 EUR

Mindestbestellmenge: 3000

SQJ446EP-T1_GE3

Trans MOSFET N-CH 40V 60A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ446EP-T1_GE3

MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified

auf Bestellung 2400 Stücke:

Lieferzeit 14-28 Tag (e)

SQJ454EP-T1_BE3

Description: N-CHANNEL 200-V (D-S) 175C MOSFE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 7.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V

Produkt ist nicht verfügbar

SQJ454EP-T1_BE3

N-Channel MOSFET Automotive AEC-Q101

Produkt ist nicht verfügbar

SQJ454EP-T1_BE3

Description: N-CHANNEL 200-V (D-S) 175C MOSFE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 7.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V

auf Bestellung 2135 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.28 EUR
10+	2.68 EUR
100+	2.08 EUR
500+	1.76 EUR
1000+	1.44 EUR

Mindestbestellmenge: 8

SQJ454EP-T1_GE3

Trans MOSFET N-CH 200V 13A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

190+	0.82 EUR

Mindestbestellmenge: 190

SQJ454EP-T1_GE3

Description: VISHAY - SQJ454EP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 200 V, 13 A, 0.118 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 200V
rohsCompliant: YES
Dauer-Drainstrom Id: 13A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 68W
Anzahl der Pins: 8Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.118ohm

auf Bestellung 2893 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ454EP-T1_GE3

Trans MOSFET N-CH 200V 13A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

161+	0.97 EUR
172+	0.88 EUR
186+	0.78 EUR
500+	0.7 EUR
1000+	0.62 EUR
3000+	0.58 EUR

Mindestbestellmenge: 161

SQJ454EP-T1_GE3

Description: MOSFET N-CH 200V 13A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 7.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.25 EUR

Mindestbestellmenge: 3000

SQJ454EP-T1_GE3

auf Bestellung 2893 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ454EP-T1_GE3

Trans MOSFET N-CH 200V 13A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ454EP-T1_GE3

Trans MOSFET N-CH 200V 13A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ454EP-T1_GE3

MOSFET 200V Vds PowerPAK AEC-Q101 Qualified

auf Bestellung 17707 Stücke:

Lieferzeit 14-28 Tag (e)

15+	3.64 EUR
19+	2.81 EUR
100+	2.6 EUR
24000+	1.31 EUR

Mindestbestellmenge: 15

SQJ454EP-T1_GE3

Description: MOSFET N-CH 200V 13A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 7.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 8595 Stücke:

Lieferzeit 21-28 Tag (e)

9+	3.02 EUR
11+	2.47 EUR
100+	1.92 EUR
500+	1.63 EUR
1000+	1.33 EUR

Mindestbestellmenge: 9

SQJ456EP-T1-GE3

MOSFET RECOMMENDED ALT 78-SQJ456EP-T1_GE3

Produkt ist nicht verfügbar

SQJ456EP-T1-GE3

Description: MOSFET N-CH 100V 32A PPAK SO-8

Produkt ist nicht verfügbar

SQJ456EP-T1_GE3

MOSFET 100V 32A 83W AEC-Q101 Qualified

Produkt ist nicht verfügbar

SQJ456EP-T1_GE3

Description: MOSFET N-CH 100V 32A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 9.3A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3342 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	5.79 EUR

Mindestbestellmenge: 3000

SQJ456EP-T1_GE3

Trans MOSFET N-CH 100V 32A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ456EP-T1_GE3

Description: MOSFET N-CH 100V 32A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 9.3A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3342 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 4428 Stücke:

Lieferzeit 21-28 Tag (e)

3+	11.91 EUR
10+	9.99 EUR
100+	8.08 EUR
500+	7.18 EUR
1000+	6.15 EUR

Mindestbestellmenge: 3

SQJ456EP-T1_GE3

Trans MOSFET N-CH 100V 32A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO EP T/R

Produkt ist nicht verfügbar

SQJ456EP-T2_GE3

Description: MOSFET N-CH 100V 32A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 9.3A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3342 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

SQJ456EP-T2_GE3

Trans MOSFET N-CH 100V 32A Automotive AEC-Q101

Produkt ist nicht verfügbar

SQJ456EP-T2_GE3

MOSFET RECOMMENDED ALT 78-SQJA72EP-T1_GE3

Produkt ist nicht verfügbar

SQJ457EP-T1_BE3

MOSFET P-CHANNEL 60-V (D-S) 175C MOSFET

auf Bestellung 129316 Stücke:

Lieferzeit 14-28 Tag (e)

23+	2.27 EUR
28+	1.87 EUR
100+	1.45 EUR
500+	1.23 EUR
1000+	1 EUR
3000+	0.95 EUR
6000+	0.9 EUR

Mindestbestellmenge: 23

SQJ457EP-T1_BE3

Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V

auf Bestellung 2693 Stücke:

Lieferzeit 21-28 Tag (e)

12+	2.29 EUR
14+	1.86 EUR
100+	1.45 EUR
500+	1.22 EUR
1000+	1 EUR

Mindestbestellmenge: 12

SQJ457EP-T1_BE3

Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V

Produkt ist nicht verfügbar

SQJ457EP-T1_BE3

Trans MOSFET P-CH 60V 36A 5-Pin(4+Tab) PowerPAK SO T/R Automotive AEC-Q101

Produkt ist nicht verfügbar

SQJ457EP-T1_BE3

SQJ457EP-T1_BE3

Produkt ist nicht verfügbar

SQJ457EP-T1_GE3

Description: MOSFET P-CH 60V 36A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 33000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.94 EUR
6000+	0.89 EUR
9000+	0.85 EUR

Mindestbestellmenge: 3000

SQJ457EP-T1_GE3

Trans MOSFET P-CH 60V 36A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 2720 Stücke:

Lieferzeit 14-21 Tag (e)

226+	0.69 EUR

Mindestbestellmenge: 226

SQJ457EP-T1_GE3

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -36A; Idm: -100A; 22W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -36A
Pulsed drain current: -100A
Power dissipation: 22W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 50.4mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry

Produkt ist nicht verfügbar

SQJ457EP-T1_GE3

Description: VISHAY - SQJ457EP-T1_GE3 - Leistungs-MOSFET, p-Kanal, 60 V, 36 A, 0.021 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 36A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 68W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.021ohm

auf Bestellung 1392 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ457EP-T1_GE3

Trans MOSFET P-CH 60V 36A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	0.72 EUR

Mindestbestellmenge: 3000

SQJ457EP-T1_GE3

Produkt ist nicht verfügbar

SQJ457EP-T1_GE3

Trans MOSFET P-CH 60V 36A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 2720 Stücke:

Lieferzeit 14-21 Tag (e)

109+	1.44 EUR
133+	1.14 EUR
134+	1.09 EUR
173+	0.81 EUR
250+	0.77 EUR
500+	0.62 EUR
1000+	0.47 EUR

Mindestbestellmenge: 109

SQJ457EP-T1_GE3

Trans MOSFET P-CH 60V 36A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ457EP-T1_GE3

Description: MOSFET P-CH 60V 36A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 34286 Stücke:

Lieferzeit 21-28 Tag (e)

12+	2.29 EUR
14+	1.86 EUR
100+	1.45 EUR
500+	1.22 EUR
1000+	1 EUR

Mindestbestellmenge: 12

SQJ457EP-T1_GE3

auf Bestellung 1392 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ457EP-T1_GE3

Trans MOSFET P-CH 60V 36A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	0.66 EUR

Mindestbestellmenge: 3000

SQJ457EP-T1_GE3

MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified

auf Bestellung 134944 Stücke:

Lieferzeit 14-28 Tag (e)

23+	2.3 EUR
28+	1.87 EUR
100+	1.45 EUR
500+	1.24 EUR
1000+	0.99 EUR
3000+	0.95 EUR
6000+	0.9 EUR

Mindestbestellmenge: 23

SQJ457EP-T1_GE3

Trans MOSFET P-CH 60V 36A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ457EP-T2_GE3

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.93 EUR
6000+	0.89 EUR

Mindestbestellmenge: 3000

SQJ457EP-T2_GE3

MOSFET P-CHANNEL 60-V (D-S) 175C MOSFET

Produkt ist nicht verfügbar

SQJ457EP-T2_GE3

auf Bestellung 8710 Stücke:

Lieferzeit 21-28 Tag (e)

12+	2.26 EUR
15+	1.84 EUR
100+	1.43 EUR
500+	1.21 EUR
1000+	0.99 EUR

Mindestbestellmenge: 12

SQJ459EP-T1_BE3

Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4586 pF @ 30 V

auf Bestellung 2938 Stücke:

Lieferzeit 21-28 Tag (e)

9+	3.04 EUR
11+	2.48 EUR
100+	1.93 EUR
500+	1.64 EUR
1000+	1.33 EUR

Mindestbestellmenge: 9

SQJ459EP-T1_BE3

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -52A; Idm: -200A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -52A
Pulsed drain current: -200A
Power dissipation: 83W
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke

Produkt ist nicht verfügbar

SQJ459EP-T1_BE3

Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4586 pF @ 30 V

Produkt ist nicht verfügbar

SQJ459EP-T1_BE3

Trans MOSFET P-CH 60V 52A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO EP T/R

Produkt ist nicht verfügbar

SQJ459EP-T1_BE3

Produkt ist nicht verfügbar

SQJ459EP-T1_GE3

Trans MOSFET P-CH 60V 52A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	0.9 EUR

Mindestbestellmenge: 3000

SQJ459EP-T1_GE3

Trans MOSFET P-CH 60V 52A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 18000 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ459EP-T1_GE3

Description: MOSFET P-CH 60V 52A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4586 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 74101 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.35 EUR
10+	2.76 EUR
100+	2.14 EUR
500+	1.82 EUR
1000+	1.48 EUR

Mindestbestellmenge: 8

SQJ459EP-T1_GE3

Trans MOSFET P-CH 60V 52A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	1.44 EUR

Mindestbestellmenge: 3000

SQJ459EP-T1_GE3

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -52A; Idm: -200A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -52A
Pulsed drain current: -200A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry

Produkt ist nicht verfügbar

SQJ459EP-T1_GE3

Description: VISHAY - SQJ459EP-T1_GE3 - Leistungs-MOSFET, p-Kanal, 60 V, 52 A, 0.0155 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 52A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 83W
Anzahl der Pins: 8Pin(s)
productTraceability: No
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0155ohm

auf Bestellung 1963 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ459EP-T1_GE3

Trans MOSFET P-CH 60V 52A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 2544 Stücke:

Lieferzeit 14-21 Tag (e)

152+	1.03 EUR

Mindestbestellmenge: 152

SQJ459EP-T1_GE3

Description: MOSFET P-CH 60V 52A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4586 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 72000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.39 EUR
6000+	1.33 EUR
9000+	1.27 EUR

Mindestbestellmenge: 3000

SQJ459EP-T1_GE3

Produkt ist nicht verfügbar

SQJ459EP-T1_GE3

Trans MOSFET P-CH 60V 52A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 2544 Stücke:

Lieferzeit 14-21 Tag (e)

90+	1.74 EUR
107+	1.42 EUR
108+	1.35 EUR
117+	1.2 EUR
250+	1.14 EUR
500+	0.85 EUR
1000+	0.69 EUR

Mindestbestellmenge: 90

SQJ459EP-T1_GE3

auf Bestellung 1963 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ459EP-T1_GE3

Trans MOSFET P-CH 60V 52A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	0.92 EUR

Mindestbestellmenge: 3000

SQJ459EP-T1_GE3

MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified

auf Bestellung 44095 Stücke:

Lieferzeit 14-28 Tag (e)

16+	3.35 EUR
19+	2.76 EUR
100+	2.16 EUR
500+	1.83 EUR
1000+	1.49 EUR
3000+	1.4 EUR
6000+	1.33 EUR

Mindestbestellmenge: 16

SQJ459EP-T2_BE3

Trans MOSFET P-CH 60V 52A 5-Pin(4+Tab) PowerPAK SO Automotive AEC-Q101

Produkt ist nicht verfügbar

SQJ459EP-T2_BE3

Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4586 pF @ 30 V

auf Bestellung 12416 Stücke:

Lieferzeit 21-28 Tag (e)

9+	2.91 EUR
11+	2.39 EUR
100+	1.86 EUR
500+	1.58 EUR
1000+	1.29 EUR

Mindestbestellmenge: 9

SQJ459EP-T2_BE3

MOSFET P-CHANNEL 60-V (D-S) 175C MOSFET

auf Bestellung 77696 Stücke:

Lieferzeit 14-28 Tag (e)

18+	2.96 EUR
22+	2.44 EUR
100+	1.92 EUR
3000+	1.64 EUR
6000+	1.6 EUR
9000+	1.57 EUR

Mindestbestellmenge: 18

SQJ459EP-T2_BE3

Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4586 pF @ 30 V

auf Bestellung 12000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.21 EUR
6000+	1.15 EUR
9000+	1.1 EUR

Mindestbestellmenge: 3000

SQJ459EP-T2_GE3

Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4586 pF @ 30 V

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.21 EUR

Mindestbestellmenge: 3000

SQJ459EP-T2_GE3

MOSFET P-CHANNEL 60-V (D-S) 175C MOSFET

auf Bestellung 3000 Stücke:

Lieferzeit 14-28 Tag (e)

18+	2.96 EUR
22+	2.44 EUR
100+	1.9 EUR
500+	1.61 EUR
1000+	1.31 EUR
3000+	1.27 EUR

Mindestbestellmenge: 18

SQJ459EP-T2_GE3

Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4586 pF @ 30 V

auf Bestellung 4395 Stücke:

Lieferzeit 21-28 Tag (e)

9+	2.91 EUR
11+	2.39 EUR
100+	1.86 EUR
500+	1.58 EUR
1000+	1.29 EUR

Mindestbestellmenge: 9

SQJ459EP-T2_GE3

Trans MOSFET P-CH 60V 52A 5-Pin(4+Tab) PowerPAK SO Automotive AEC-Q101

Produkt ist nicht verfügbar

SQJ459EP-T2_GE3

P-CHANNEL 60-V (D-S) 175C MOSFET

Produkt ist nicht verfügbar

SQJ460AEP-T1_BE3

Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10.7A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2654 pF @ 30 V
Qualification: AEC-Q101

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.43 EUR

Mindestbestellmenge: 3000

SQJ460AEP-T1_BE3

Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10.7A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2654 pF @ 30 V
Qualification: AEC-Q101

auf Bestellung 5888 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.46 EUR
10+	2.82 EUR
100+	2.2 EUR
500+	1.86 EUR
1000+	1.52 EUR

Mindestbestellmenge: 8

SQJ460AEP-T1_GE3

Trans MOSFET N-CH 60V 58A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ460AEP-T1_GE3

Trans MOSFET N-CH 60V 58A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ460AEP-T1_GE3

Description: MOSFET N-CH 60V 32A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4795 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

SQJ460AEP-T1_GE3

MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified

auf Bestellung 12431 Stücke:

Lieferzeit 14-28 Tag (e)

15+	3.51 EUR
19+	2.89 EUR
100+	2.23 EUR
500+	1.9 EUR
1000+	1.54 EUR
3000+	1.48 EUR
6000+	1.41 EUR

Mindestbestellmenge: 15

SQJ460AEP-T1_GE3

Description: MOSFET N-CH 60V 32A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4795 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 2333 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.48 EUR
10+	2.85 EUR
100+	2.22 EUR
500+	1.88 EUR
1000+	1.53 EUR

Mindestbestellmenge: 8

SQJ460AEP-T2_GE3

Automotive N Channel 60 V 175 C MOSFET

Produkt ist nicht verfügbar

SQJ460EP-T1-GE3

Description: MOSFET N-CH 60V 32A SO-8

Produkt ist nicht verfügbar

SQJ461EP-T1-GE3

Description: VISHAY - SQJ461EP-T1-GE3 - Leistungs-MOSFET, p-Kanal, 60 V, 30 A, 0.013 ohm, PowerPAK SO, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60
Dauer-Drainstrom Id: 30
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 83
Gate-Source-Schwellenspannung, max.: 2
Verlustleistung: 83
Bauform - Transistor: PowerPAK SO
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: -
Wandlerpolarität: p-Kanal
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 0.013
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.013
SVHC: To Be Advised

Produkt ist nicht verfügbar

SQJ461EP-T1-GE3

Description: MOSFET P-CH 60V 30A 8-SO

Produkt ist nicht verfügbar

SQJ461EP-T1-GE3

MOSFET RECOMMENDED ALT 78-SQJ461EP-T1_GE3

Produkt ist nicht verfügbar

SQJ461EP-T1_GE3

Trans MOSFET P-CH 60V 30A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO EP T/R

auf Bestellung 2787 Stücke:

Lieferzeit 14-21 Tag (e)

65+	2.44 EUR

Mindestbestellmenge: 65

SQJ461EP-T1_GE3

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; Idm: -120A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 27W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke

Produkt ist nicht verfügbar

SQJ461EP-T1_GE3

Description: MOSFET P-CH 60V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 14.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4710 pF @ 30 V
Qualification: AEC-Q101

auf Bestellung 9878 Stücke:

Lieferzeit 21-28 Tag (e)

4+	6.66 EUR
10+	5.58 EUR
100+	4.51 EUR
500+	4.01 EUR
1000+	3.44 EUR

Mindestbestellmenge: 4

SQJ461EP-T1_GE3

Trans MOSFET P-CH 60V 30A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO EP T/R

auf Bestellung 2787 Stücke:

Lieferzeit 14-21 Tag (e)

36+	4.46 EUR
42+	3.47 EUR
100+	2.7 EUR
500+	2.31 EUR
1000+	2 EUR

Mindestbestellmenge: 36

SQJ461EP-T1_GE3

Trans MOSFET P-CH 60V 30A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ461EP-T1_GE3

Description: MOSFET P-CH 60V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 14.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4710 pF @ 30 V
Qualification: AEC-Q101

auf Bestellung 9000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	3.24 EUR
6000+	3.1 EUR

Mindestbestellmenge: 3000

SQJ461EP-T1_GE3

Trans MOSFET P-CH 60V 30A Automotive 5-Pin(4+Tab) PowerPAK SO EP T/R

Produkt ist nicht verfügbar

SQJ461EP-T1_GE3

MOSFET 60V 30A 83W AEC-Q101 Qualified

auf Bestellung 17503 Stücke:

Lieferzeit 14-28 Tag (e)

8+	6.92 EUR
10+	5.82 EUR
25+	5.8 EUR
100+	4.68 EUR
500+	4.19 EUR
1000+	3.59 EUR
3000+	3.35 EUR

Mindestbestellmenge: 8

SQJ461EP-T1_GE3

Produkt ist nicht verfügbar

SQJ461EP-T2_GE3

Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 14.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4710 pF @ 30 V

auf Bestellung 5994 Stücke:

Lieferzeit 21-28 Tag (e)

6+	4.68 EUR
10+	3.88 EUR
100+	3.09 EUR
500+	2.61 EUR
1000+	2.22 EUR

Mindestbestellmenge: 6

SQJ461EP-T2_GE3

MOSFET P-CHANNEL 60-V (D-S) 175C MOSFET

auf Bestellung 3000 Stücke:

Lieferzeit 379-393 Tag (e)

11+	4.81 EUR
13+	4.32 EUR
100+	3.46 EUR
500+	2.86 EUR
1000+	2.39 EUR

Mindestbestellmenge: 11

SQJ461EP-T2_GE3

Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 14.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4710 pF @ 30 V

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	2.11 EUR

Mindestbestellmenge: 3000

SQJ463EP-T1"GE3

Description: VISHAY - SQJ463EP-T1"GE3 - MOSFET, P-CH, -40V, -30A, POWERPAK SO
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 40
Dauer-Drainstrom Id: 30
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 83
Bauform - Transistor: PowerPAK SO
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: TrenchFET SQ Series
Wandlerpolarität: P Channel
Betriebswiderstand, Rds(on): 0.008
Betriebstemperatur, max.: 175
Schwellenspannung Vgs: 2
SVHC: No SVHC (16-Jan-2020)

Produkt ist nicht verfügbar

SQJ463EP-T1-GE3

Description: MOSFET P-CH 40V 30A PPAK SO-8

Produkt ist nicht verfügbar

SQJ463EP-T1-GE3

Trans MOSFET P-CH 40V 30A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ463EP-T1-GE3

MOSFET 40V 30A 83W P-Ch Automotive

auf Bestellung 1377 Stücke:

Lieferzeit 14-28 Tag (e)

SQJ463EP-T1-GE3

Description: VISHAY - SQJ463EP-T1-GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 18 A, 0.008 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40
Dauer-Drainstrom Id: 18
hazardous: false
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 1.9
Gate-Source-Schwellenspannung, max.: 2
euEccn: NLR
Verlustleistung: 1.9
Bauform - Transistor: PowerPAK SO
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: -
Wandlerpolarität: p-Kanal
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 0.008
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.008
SVHC: To Be Advised

Produkt ist nicht verfügbar

SQJ463EP-T1-GE3

SQJ463EP-T1-GE3 Vishay MOSFETs Transistor P-CH 40V 30A Automotive 5-Pin(4+Tab) PowerPAK SO - Arrow.com

auf Bestellung 11 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ463EP-T1-GE3
Produktcode: 170979

Transistoren > Transistoren P-Kanal-Feld

Produkt ist nicht verfügbar

SQJ463EP-T1_GE3

SQJ463EP-T1-GE3 Vishay MOSFETs Transistor P-CH 40V 30A Automotive 5-Pin(4+Tab) PowerPAK SO - Arrow.com

Produkt ist nicht verfügbar

SQJ463EP-T1_GE3

SQJ463EP-T1-GE3 Vishay MOSFETs Transistor P-CH 40V 30A Automotive 5-Pin(4+Tab) PowerPAK SO - Arrow.com

Produkt ist nicht verfügbar

SQJ463EP-T1_GE3

Description: MOSFET P-CH 40V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 18A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5875 pF @ 20 V

Produkt ist nicht verfügbar

SQJ463EP-T1_GE3

Description: VISHAY - SQJ463EP-T1_GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 30 A, 0.008 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 30A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 83W
Anzahl der Pins: 8Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.008ohm

auf Bestellung 2363 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ463EP-T1_GE3

SQJ463EP-T1-GE3 Vishay MOSFETs Transistor P-CH 40V 30A Automotive 5-Pin(4+Tab) PowerPAK SO - Arrow.com

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	2.33 EUR
6000+	2.17 EUR

Mindestbestellmenge: 3000

SQJ463EP-T1_GE3

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -30A; Idm: -120A; 28W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 28W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry

Produkt ist nicht verfügbar

SQJ463EP-T1_GE3

Description: MOSFET P-CH 40V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 18A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5875 pF @ 20 V

Produkt ist nicht verfügbar

SQJ463EP-T1_GE3

Trans MOSFET P-CH 40V 30A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ463EP-T1_GE3

MOSFET RECOMMENDED ALT SQJ423EP-T1_GE3

auf Bestellung 2480 Stücke:

Lieferzeit 14-28 Tag (e)

7+	7.46 EUR
10+	6.29 EUR
25+	6.08 EUR
100+	5.07 EUR
250+	4.94 EUR
500+	4.52 EUR
1000+	3.87 EUR

Mindestbestellmenge: 7

SQJ463EP-T1_GE3

auf Bestellung 2363 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ463EP-T1_GE3

SQJ463EP-T1-GE3 Vishay MOSFETs Transistor P-CH 40V 30A Automotive 5-Pin(4+Tab) PowerPAK SO - Arrow.com

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	1.64 EUR

Mindestbestellmenge: 3000

SQJ463EP-T1_GE3

Produkt ist nicht verfügbar

SQJ464EP-T1_BE3

Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2086 pF @ 30 V
Qualification: AEC-Q101

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

12+	2.31 EUR
14+	1.88 EUR
100+	1.46 EUR
500+	1.24 EUR
1000+	1.01 EUR

Mindestbestellmenge: 12

SQJ464EP-T1_BE3

Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2086 pF @ 30 V
Qualification: AEC-Q101

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.95 EUR

Mindestbestellmenge: 3000

SQJ464EP-T1_GE3

Description: MOSFET N-CH 60V 32A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2086 pF @ 30 V

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.95 EUR
6000+	0.91 EUR

Mindestbestellmenge: 3000

SQJ464EP-T1_GE3

Trans MOSFET N-CH 60V 32A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ464EP-T1_GE3

Trans MOSFET N-CH 60V 32A 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ464EP-T1_GE3

MOSFET N-Chnl 60-V (D-S) AEC-Q101 Qualified

auf Bestellung 87637 Stücke:

Lieferzeit 14-28 Tag (e)

23+	2.35 EUR
28+	1.92 EUR
100+	1.49 EUR
500+	1.26 EUR
1000+	1.03 EUR
3000+	0.97 EUR
6000+	0.92 EUR

Mindestbestellmenge: 23

SQJ464EP-T1_GE3

Trans MOSFET N-CH 60V 32A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	0.59 EUR

Mindestbestellmenge: 3000

SQJ464EP-T1_GE3

Trans MOSFET N-CH 60V 32A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ464EP-T1_GE3

Description: MOSFET N-CH 60V 32A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2086 pF @ 30 V

auf Bestellung 8705 Stücke:

Lieferzeit 21-28 Tag (e)

12+	2.31 EUR
14+	1.88 EUR
100+	1.46 EUR
500+	1.24 EUR
1000+	1.01 EUR

Mindestbestellmenge: 12

SQJ464EP-T1_GE3

Trans MOSFET N-CH 60V 32A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	0.71 EUR

Mindestbestellmenge: 3000

SQJ464EP-T2_GE3

MOSFET 60V Vds 20V Vgs PowerPAK SO-8L

auf Bestellung 3000 Stücke:

Lieferzeit 224-238 Tag (e)

26+	2.04 EUR
29+	1.82 EUR
100+	1.42 EUR
500+	1.17 EUR
1000+	0.93 EUR
3000+	0.86 EUR

Mindestbestellmenge: 26

SQJ465EP-T1-GE3

Trans MOSFET P-CH 60V 8A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ465EP-T1-GE3

Trans MOSFET P-CH 60V 8A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 2794 Stücke:

Lieferzeit 14-21 Tag (e)

79+	2 EUR
96+	1.58 EUR
123+	1.18 EUR
500+	0.96 EUR
1000+	0.77 EUR

Mindestbestellmenge: 79

SQJ465EP-T1-GE3

MOSFET RECOMMENDED ALT 781-SQJ465EP-T1_GE3

Produkt ist nicht verfügbar

SQJ465EP-T1-GE3

Trans MOSFET P-CH 60V 8A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 2794 Stücke:

Lieferzeit 14-21 Tag (e)

174+	0.9 EUR

Mindestbestellmenge: 174

SQJ465EP-T1_GE3

Description: VISHAY - SQJ465EP-T1_GE3 - Leistungs-MOSFET, p-Kanal, 60 V, 8 A, 0.07 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412100
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 8A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 45W
Anzahl der Pins: 8Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.07ohm

auf Bestellung 13967 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ465EP-T1_GE3

MOSFET -60V -8A 45W AEC-Q101 Qualified

auf Bestellung 42662 Stücke:

Lieferzeit 14-28 Tag (e)

17+	3.09 EUR
21+	2.54 EUR
100+	1.98 EUR
500+	1.67 EUR
1000+	1.36 EUR
3000+	1.28 EUR
6000+	1.22 EUR

Mindestbestellmenge: 17

SQJ465EP-T1_GE3

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8A; 15W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8A
Power dissipation: 15W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 26.5nC
Kind of package: reel; tape
Kind of channel: enhanced

auf Bestellung 2875 Stücke:

Lieferzeit 14-21 Tag (e)

46+	1.56 EUR
51+	1.42 EUR
64+	1.13 EUR
68+	1.06 EUR
500+	1.04 EUR

Mindestbestellmenge: 46

SQJ465EP-T1_GE3

Description: MOSFET P-CH 60V 8A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V, 1.17mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101

Produkt ist nicht verfügbar

SQJ465EP-T1_GE3

auf Bestellung 2875 Stücke:

Lieferzeit 7-14 Tag (e)

46+	1.56 EUR
51+	1.42 EUR
64+	1.13 EUR
68+	1.06 EUR
500+	1.04 EUR

Mindestbestellmenge: 46

SQJ465EP-T1_GE3

auf Bestellung 13967 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ465EP-T1_GE3

Description: MOSFET P-CH 60V 8A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V, 1.17mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 2955 Stücke:

Lieferzeit 21-28 Tag (e)

9+	3.07 EUR
11+	2.52 EUR
100+	1.96 EUR
500+	1.66 EUR
1000+	1.35 EUR

Mindestbestellmenge: 9

SQJ465EP-T1_GE3

Trans MOSFET P-CH 60V 8A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ469EP-T1-GE3

Trans MOSFET P-CH 80V 32A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ469EP-T1_GE3

Description: MOSFET P-CH 80V 32A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 8754 Stücke:

Lieferzeit 21-28 Tag (e)

4+	6.73 EUR
10+	5.64 EUR
100+	4.56 EUR
500+	4.05 EUR
1000+	3.47 EUR

Mindestbestellmenge: 4

SQJ469EP-T1_GE3

Trans MOSFET P-CH 80V 32A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ469EP-T1_GE3

Description: VISHAY - SQJ469EP-T1_GE3 - Leistungs-MOSFET, p-Kanal, 80 V, 32 A, 0.021 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 32A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 100W
Anzahl der Pins: 8Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.021ohm

auf Bestellung 17794 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ469EP-T1_GE3

Trans MOSFET P-CH 80V 32A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO EP T/R

Produkt ist nicht verfügbar

SQJ469EP-T1_GE3

Description: MOSFET P-CH 80V 32A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	3.27 EUR
6000+	3.14 EUR

Mindestbestellmenge: 3000

SQJ469EP-T1_GE3

MOSFET 80V 32A 100W AEC-Q101 Qualified

auf Bestellung 35414 Stücke:

Lieferzeit 14-28 Tag (e)

8+	6.76 EUR
10+	5.69 EUR
100+	4.6 EUR
500+	4.08 EUR
1000+	3.51 EUR
3000+	3.28 EUR

Mindestbestellmenge: 8

SQJ469EP-T1_GE3

auf Bestellung 17794 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ469EP-T1_GE3

Trans MOSFET P-CH 80V 32A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO EP T/R

Produkt ist nicht verfügbar

SQJ469EP-T1_GE3

Trans MOSFET P-CH 80V 32A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO EP T/R

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	2.55 EUR

Mindestbestellmenge: 3000

SQJ474EP-T1_BE3

Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

12+	2.24 EUR
15+	1.84 EUR
100+	1.43 EUR
500+	1.21 EUR
1000+	0.99 EUR

Mindestbestellmenge: 12

SQJ474EP-T1_BE3

Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.93 EUR
6000+	0.88 EUR

Mindestbestellmenge: 3000

SQJ474EP-T1_GE3

Trans MOSFET N-CH 100V 26A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ474EP-T1_GE3

MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified

auf Bestellung 3767 Stücke:

Lieferzeit 14-28 Tag (e)

23+	2.27 EUR
28+	1.87 EUR
100+	1.45 EUR
500+	1.23 EUR
1000+	1 EUR
3000+	0.94 EUR
6000+	0.9 EUR

Mindestbestellmenge: 23

SQJ474EP-T1_GE3

Description: MOSFET N-CH 100V 26A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 27060 Stücke:

Lieferzeit 21-28 Tag (e)

12+	2.24 EUR
15+	1.84 EUR
100+	1.43 EUR
500+	1.21 EUR
1000+	0.99 EUR

Mindestbestellmenge: 12

SQJ474EP-T1_GE3

Trans MOSFET N-CH 100V 26A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ474EP-T1_GE3

Trans MOSFET N-CH 100V 26A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ474EP-T1_GE3

Description: MOSFET N-CH 100V 26A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 27000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.93 EUR
6000+	0.88 EUR
9000+	0.84 EUR

Mindestbestellmenge: 3000

SQJ474EP-T2_GE3

Description: MOSFET N-CH 100V 26A PPAK SO-8

Produkt ist nicht verfügbar

SQJ474EP-T2_GE3

MOSFET 100V Vds 20V Vgs PowerPAK SO-8L

Produkt ist nicht verfügbar

SQJ476EP-T1_BE3

Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V

auf Bestellung 2812 Stücke:

Lieferzeit 21-28 Tag (e)

13+	2.16 EUR
14+	1.87 EUR
100+	1.29 EUR
500+	1.08 EUR
1000+	0.92 EUR

Mindestbestellmenge: 13

SQJ476EP-T1_BE3

MOSFET N-CHANNEL 100-V (D-S) 175C MOSFET

auf Bestellung 2996 Stücke:

Lieferzeit 14-28 Tag (e)

24+	2.2 EUR
27+	1.93 EUR
100+	1.32 EUR
500+	1.1 EUR
1000+	0.96 EUR
3000+	0.82 EUR
6000+	0.8 EUR

Mindestbestellmenge: 24

SQJ476EP-T1_BE3

Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V

Produkt ist nicht verfügbar

SQJ476EP-T1_GE3

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 45W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 45W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

Produkt ist nicht verfügbar

SQJ476EP-T1_GE3

MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified

auf Bestellung 38063 Stücke:

Lieferzeit 14-28 Tag (e)

21+	2.56 EUR
27+	1.93 EUR
100+	1.76 EUR
3000+	1.02 EUR
9000+	0.88 EUR
24000+	0.82 EUR

Mindestbestellmenge: 21

SQJ476EP-T1_GE3

Trans MOSFET N-CH 100V 23A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 36000 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ476EP-T1_GE3

Trans MOSFET N-CH 100V 23A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 2733 Stücke:

Lieferzeit 14-21 Tag (e)

113+	1.39 EUR
130+	1.16 EUR
132+	1.11 EUR
137+	1.02 EUR
186+	0.72 EUR
250+	0.69 EUR
500+	0.55 EUR
1000+	0.38 EUR

Mindestbestellmenge: 113

SQJ476EP-T1_GE3

Description: VISHAY - SQJ476EP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 23 A, 0.03 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 23A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 45W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.03ohm
SVHC: No SVHC (10-Jun-2022)

auf Bestellung 13929 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ476EP-T1_GE3

Description: MOSFET N-CH 100V 23A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 11436 Stücke:

Lieferzeit 21-28 Tag (e)

12+	2.18 EUR
14+	1.89 EUR
100+	1.31 EUR
500+	1.09 EUR
1000+	0.93 EUR

Mindestbestellmenge: 12

SQJ476EP-T1_GE3

Produkt ist nicht verfügbar

SQJ476EP-T1_GE3

Trans MOSFET N-CH 100V 23A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 2733 Stücke:

Lieferzeit 14-21 Tag (e)

280+	0.56 EUR

Mindestbestellmenge: 280

SQJ476EP-T1_GE3

Description: MOSFET N-CH 100V 23A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 11400 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.83 EUR
6000+	0.78 EUR
9000+	0.73 EUR

Mindestbestellmenge: 3000

SQJ476EP-T1_GE3

auf Bestellung 13929 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ479EP-T1_BE3

Description: P-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.16 EUR
6000+	1.11 EUR

Mindestbestellmenge: 3000

SQJ479EP-T1_BE3

Description: P-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V

auf Bestellung 8392 Stücke:

Lieferzeit 21-28 Tag (e)

10+	2.81 EUR
12+	2.3 EUR
100+	1.79 EUR
500+	1.52 EUR
1000+	1.24 EUR

Mindestbestellmenge: 10

SQJ479EP-T1_BE3

MOSFET P-CHANNEL 80-V (D-S) 175C MOSFET

auf Bestellung 247534 Stücke:

Lieferzeit 14-28 Tag (e)

19+	2.86 EUR
23+	2.34 EUR
100+	1.82 EUR
500+	1.75 EUR
3000+	1.49 EUR

Mindestbestellmenge: 19

SQJ479EP-T1_BE3

Trans MOSFET P-CH 80V 32A Automotive 5-Pin(4+Tab) PowerPAK SO EP T/R

Produkt ist nicht verfügbar

SQJ479EP-T1_BE3

Trans MOSFET P-CH 80V 32A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO EP T/R

Produkt ist nicht verfügbar

SQJ479EP-T1_GE3

Trans MOSFET P-CH 80V 32A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 847 Stücke:

Lieferzeit 14-21 Tag (e)

84+	1.87 EUR
87+	1.73 EUR
103+	1.41 EUR
110+	1.28 EUR
250+	1.1 EUR
500+	0.93 EUR

Mindestbestellmenge: 84

SQJ479EP-T1_GE3

Description: VISHAY - SQJ479EP-T1_GE3 - Leistungs-MOSFET, p-Kanal, 80 V, 32 A, 0.0275 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 32A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 68W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0275ohm
SVHC: No SVHC (10-Jun-2022)

auf Bestellung 3481 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ479EP-T1_GE3

Description: MOSFET P-CH 80V 32A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 54000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.18 EUR
6000+	1.12 EUR
9000+	1.07 EUR

Mindestbestellmenge: 3000

SQJ479EP-T1_GE3

MOSFET P Ch -80Vds 20Vgs AEC-Q101 Qualified

auf Bestellung 50322 Stücke:

Lieferzeit 14-28 Tag (e)

19+	2.86 EUR
23+	2.34 EUR
100+	1.82 EUR
500+	1.54 EUR
1000+	1.26 EUR
3000+	1.18 EUR
6000+	1.13 EUR

Mindestbestellmenge: 19

SQJ479EP-T1_GE3
Produktcode: 194623

Verschiedene Bauteile > Verschiedene Bauteile 1

Produkt ist nicht verfügbar

SQJ479EP-T1_GE3

Trans MOSFET P-CH 80V 32A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 48000 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ479EP-T1_GE3

Trans MOSFET P-CH 80V 32A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ479EP-T1_GE3

auf Bestellung 3481 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ479EP-T1_GE3

Trans MOSFET P-CH 80V 32A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 45000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	1.22 EUR
9000+	1.08 EUR
18000+	0.97 EUR
27000+	0.88 EUR

Mindestbestellmenge: 3000

SQJ479EP-T1_GE3

Description: MOSFET P-CH 80V 32A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 57982 Stücke:

Lieferzeit 21-28 Tag (e)

10+	2.83 EUR
12+	2.32 EUR
100+	1.81 EUR
500+	1.53 EUR
1000+	1.25 EUR

Mindestbestellmenge: 10

SQJ481EP-T1"GE3

Description: VISHAY - SQJ481EP-T1"GE3 - P-CHANNEL 80-V (D-S) 175C MOSFET 26AK9937

Produkt ist nicht verfügbar

SQJ481EP-T1-BE3

MOSFET P-CHANNEL 80-V (D-S) 175C

Produkt ist nicht verfügbar

SQJ481EP-T1_BE3

P-Channel MOSFET Automotive AEC-Q101

Produkt ist nicht verfügbar

SQJ481EP-T1_BE3

Description: P-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

SQJ481EP-T1_BE3

MOSFET P-CHANNEL 80-V (D-S) 175C MOSFET

Produkt ist nicht verfügbar

SQJ481EP-T1_BE3

Description: P-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

SQJ481EP-T1_GE3

MOSFET -80V Vds; +/-20V Vgs PowerPAK SO-8L

auf Bestellung 47707 Stücke:

Lieferzeit 14-28 Tag (e)

23+	2.32 EUR
28+	1.91 EUR
100+	1.48 EUR
500+	1.26 EUR
1000+	1.02 EUR
6000+	0.94 EUR

Mindestbestellmenge: 23

SQJ481EP-T1_GE3

Trans MOSFET P-CH 80V 16A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ481EP-T1_GE3

Description: MOSFET P-CH 80V 16A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 3102 Stücke:

Lieferzeit 21-28 Tag (e)

12+	2.29 EUR
14+	1.87 EUR
100+	1.46 EUR
500+	1.23 EUR
1000+	1.01 EUR

Mindestbestellmenge: 12

SQJ481EP-T1_GE3

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -80V; -9.2A; 15W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -9.2A
Power dissipation: 15W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced

auf Bestellung 2993 Stücke:

Lieferzeit 14-21 Tag (e)

61+	1.19 EUR
74+	0.97 EUR
103+	0.7 EUR
107+	0.67 EUR

Mindestbestellmenge: 61

SQJ481EP-T1_GE3

Description: VISHAY - SQJ481EP-T1_GE3 - Leistungs-MOSFET, p-Kanal, 80 V, 16 A, 0.0651 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 16A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 45W
Anzahl der Pins: 8Pin(s)
productTraceability: No
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0651ohm

auf Bestellung 20150 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ481EP-T1_GE3

Description: MOSFET P-CH 80V 16A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.95 EUR

Mindestbestellmenge: 3000

SQJ481EP-T1_GE3

auf Bestellung 2993 Stücke:

Lieferzeit 7-14 Tag (e)

61+	1.19 EUR
74+	0.97 EUR
103+	0.7 EUR
107+	0.67 EUR

Mindestbestellmenge: 61

SQJ481EP-T1_GE3

Trans MOSFET P-CH 80V 16A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ481EP-T1_GE3
Produktcode: 191995

IC > IC andere

Produkt ist nicht verfügbar

SQJ481EP-T1_GE3

auf Bestellung 20150 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ481EP-T2-GE3

Vishay MOSFET 80V PCH 175C

Produkt ist nicht verfügbar

SQJ486EP-T1_BE3

Description: N-CHANNEL 75-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5.9A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 37 V
Qualification: AEC-Q101

auf Bestellung 9000 Stücke:

Lieferzeit 21-28 Tag (e)

10+	2.76 EUR
12+	2.26 EUR
100+	1.76 EUR
500+	1.49 EUR
1000+	1.21 EUR

Mindestbestellmenge: 10

SQJ486EP-T1_BE3

Description: N-CHANNEL 75-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5.9A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 37 V
Qualification: AEC-Q101

auf Bestellung 9000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.14 EUR
6000+	1.09 EUR
9000+	1.04 EUR

Mindestbestellmenge: 3000

SQJ486EP-T1_GE3

MOSFET N-Channel 75V AEC-Q101 Qualified

auf Bestellung 24829 Stücke:

Lieferzeit 14-28 Tag (e)

19+	2.78 EUR
23+	2.3 EUR
100+	1.79 EUR
500+	1.51 EUR
1000+	1.23 EUR
3000+	1.16 EUR
6000+	1.1 EUR

Mindestbestellmenge: 19

SQJ486EP-T1_GE3

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 17A; 56W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 17A
Power dissipation: 56W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

Produkt ist nicht verfügbar

SQJ486EP-T1_GE3

Trans MOSFET N-CH 75V 30A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ486EP-T1_GE3

Description: MOSFET N-CH 75V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 2574 Stücke:

Lieferzeit 21-28 Tag (e)

10+	2.76 EUR
12+	2.26 EUR
100+	1.76 EUR
500+	1.49 EUR
1000+	1.21 EUR

Mindestbestellmenge: 10

SQJ486EP-T1_GE3

Trans MOSFET N-CH 75V 30A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ486EP-T1_GE3

Produkt ist nicht verfügbar

SQJ486EP-T1_GE3

Description: MOSFET N-CH 75V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101

Produkt ist nicht verfügbar

SQJ488EP-T1_BE3

Trans MOSFET N-CH 100V 42A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ488EP-T1_BE3

Description: MOSFET N-CH 100V 42A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.1A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 50 V

Produkt ist nicht verfügbar

SQJ488EP-T1_BE3

Trans MOSFET N-CH 100V 42A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ488EP-T1_BE3

Description: MOSFET N-CH 100V 42A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.1A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 50 V

Produkt ist nicht verfügbar

SQJ488EP-T1_BE3

MOSFET N-CHANNEL 100V(D-S)

auf Bestellung 2980 Stücke:

Lieferzeit 294-308 Tag (e)

15+	3.64 EUR
18+	3.04 EUR
100+	2.42 EUR
250+	2.24 EUR
500+	2.04 EUR
1000+	1.74 EUR
3000+	1.66 EUR

Mindestbestellmenge: 15

SQJ488EP-T1_GE3

Trans MOSFET N-CH 100V 42A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ488EP-T1_GE3

Trans MOSFET N-CH 100V 42A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ488EP-T1_GE3

Description: MOSFET N-CH 100V 42A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 979 pF @ 25 V

Produkt ist nicht verfügbar

SQJ488EP-T1_GE3

MOSFET 100V 32A 27watt AEC-Q101 Qualified

auf Bestellung 20968 Stücke:

Lieferzeit 744-758 Tag (e)

14+	3.72 EUR
16+	3.35 EUR
100+	2.7 EUR
500+	2.19 EUR
1000+	1.82 EUR
3000+	1.7 EUR

Mindestbestellmenge: 14

SQJ488EP-T1_GE3

Trans MOSFET N-CH 100V 42A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 6073 Stücke:

Lieferzeit 14-21 Tag (e)

132+	1.19 EUR

Mindestbestellmenge: 132

SQJ488EP-T1_GE3

Trans MOSFET N-CH 100V 42A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 6073 Stücke:

Lieferzeit 14-21 Tag (e)

61+	2.6 EUR
68+	2.24 EUR
70+	2.09 EUR
74+	1.9 EUR
100+	1.64 EUR
250+	1.51 EUR
500+	1.25 EUR
1000+	1.1 EUR
3000+	1.07 EUR

Mindestbestellmenge: 61

SQJ488EP-T1_GE3

Description: MOSFET N-CH 100V 42A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 979 pF @ 25 V

Produkt ist nicht verfügbar

SQJ488EP-T2_BE3

MOSFET N-CHANNEL 100V(D-S)

auf Bestellung 18000 Stücke:

Lieferzeit 14-28 Tag (e)

13+	4.08 EUR
15+	3.69 EUR
25+	3.48 EUR
100+	2.96 EUR

Mindestbestellmenge: 13

SQJ488EP-T2_BE3

Trans MOSFET N-CH 100V 42A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ488EP-T2_BE3

Produkt ist nicht verfügbar

SQJ488EP-T2_BE3

Produkt ist nicht verfügbar

SQJ488EP-T2_BE3

Trans MOSFET N-CH 100V 42A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ488EP-T2_GE3

Trans MOSFET N-CH 100V 42A Automotive 5-Pin(4+Tab) PowerPAK SO

Produkt ist nicht verfügbar

SQJ488EP-T2_GE3

Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.1A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 50 V
Qualification: AEC-Q101

auf Bestellung 14475 Stücke:

Lieferzeit 21-28 Tag (e)

9+	3.07 EUR
11+	2.51 EUR
100+	1.95 EUR
500+	1.65 EUR
1000+	1.35 EUR

Mindestbestellmenge: 9

SQJ488EP-T2_GE3

MOSFET N-CHANNEL 100-V (D-S) 175C MOSFET

Produkt ist nicht verfügbar

SQJ488EP-T2_GE3

Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.1A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 50 V
Qualification: AEC-Q101

auf Bestellung 12000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.27 EUR
6000+	1.21 EUR
9000+	1.15 EUR

Mindestbestellmenge: 3000

SQJ500AEP-T1-GE3

Trans MOSFET N/P-CH 40V 30A

Produkt ist nicht verfügbar

SQJ500AEP-T1_BE3

MOSFET N and P CH 40V (D-S)

auf Bestellung 45952 Stücke:

Lieferzeit 14-28 Tag (e)

14+	3.74 EUR
17+	3.07 EUR
100+	2.38 EUR
500+	2.02 EUR
1000+	1.65 EUR
3000+	1.53 EUR
6000+	1.46 EUR

Mindestbestellmenge: 14

SQJ500AEP-T1_BE3

Description: MOSFET N/P CHAN 40V SO8L DUAL

Produkt ist nicht verfügbar

SQJ500AEP-T1_BE3

Description: MOSFET N/P CHAN 40V SO8L DUAL

Produkt ist nicht verfügbar

SQJ500AEP-T1_GE3

Description: MOSFET N/P CHAN 40V SO8L DUAL

Produkt ist nicht verfügbar

SQJ500AEP-T1_GE3

Trans MOSFET N/P-CH 40V 30A

Produkt ist nicht verfügbar

SQJ500AEP-T1_GE3

Description: MOSFET N/P CHAN 40V SO8L DUAL

Produkt ist nicht verfügbar

SQJ500AEP-T1_GE3

MOSFET N and P Channel 40V AEC-Q101 Qualified

auf Bestellung 71330 Stücke:

Lieferzeit 14-28 Tag (e)

15+	3.48 EUR
17+	3.15 EUR
100+	2.5 EUR
500+	2.1 EUR
1000+	1.71 EUR
3000+	1.6 EUR
6000+	1.52 EUR

Mindestbestellmenge: 15

SQJ500EP-T1-GE3

Trans MOSFET N/P-CH 40V 8A Automotive 8-Pin PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ500EP-T1-GE3

MOSFET 40V 8A 48W

Produkt ist nicht verfügbar

SQJ504EP-T1_GE3

Description: MOSFET N/P CHAN 40V POWERPAK SO-

Produkt ist nicht verfügbar

SQJ504EP-T1_GE3

Description: VISHAY - SQJ504EP-T1_GE3 - Dual-MOSFET, Komplementärer n- und p-Kanal, 40 V, 30 A, 0.0061 ohm, PowerPAK SO
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40
Dauer-Drainstrom Id: 30
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 34
Gate-Source-Schwellenspannung, max.: 2
Bauform - Transistor: PowerPAK SO
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: TrenchFET
Wandlerpolarität: Komplementärer n- und p-Kanal
Betriebswiderstand, Rds(on): 0.0061
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
SVHC: No SVHC (19-Jan-2021)

Produkt ist nicht verfügbar

SQJ504EP-T1_GE3

Trans MOSFET N/P-CH 40V 30A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ504EP-T1_GE3

Description: MOSFET N/P CHAN 40V POWERPAK SO-

Produkt ist nicht verfügbar

SQJ504EP-T1_GE3

MOSFET 40/-40V Vds; SO-8L +/-20V Vgs

auf Bestellung 19814 Stücke:

Lieferzeit 14-28 Tag (e)

14+	3.74 EUR
17+	3.07 EUR
100+	2.38 EUR
500+	2.02 EUR
1000+	1.65 EUR
3000+	1.5 EUR
6000+	1.47 EUR

Mindestbestellmenge: 14

SQJ560EP-T1_BE3

Description: N- AND P-CHANNEL 60-V (D-S) 175C

Produkt ist nicht verfügbar

SQJ560EP-T1_BE3

Description: N- AND P-CHANNEL 60-V (D-S) 175C

Produkt ist nicht verfügbar

SQJ560EP-T1_GE3

Description: VISHAY - SQJ560EP-T1_GE3 - Dual-MOSFET, Komplementärer n- und p-Kanal, 60 V, 30 A, 0.0099 ohm, PowerPAK SO
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60
Dauer-Drainstrom Id: 30
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 34
Gate-Source-Schwellenspannung, max.: 2
Bauform - Transistor: PowerPAK SO
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: TrenchFET
Wandlerpolarität: Komplementärer n- und p-Kanal
Betriebswiderstand, Rds(on): 0.0099
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
SVHC: No SVHC (19-Jan-2021)

Produkt ist nicht verfügbar

SQJ560EP-T1_GE3

Description: MOSFET N/P-CH 60V 30A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 45nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 1692 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.43 EUR
10+	2.81 EUR
100+	2.18 EUR
500+	1.85 EUR
1000+	1.51 EUR

Mindestbestellmenge: 8

SQJ560EP-T1_GE3

Trans MOSFET N/P-CH 60V 30A/18A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ560EP-T1_GE3

Trans MOSFET N/P-CH 60V 30A/18A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ560EP-T1_GE3

MOSFET 60V Vds -/+20V Vgs PowerPAK SO-8L

auf Bestellung 65770 Stücke:

Lieferzeit 14-28 Tag (e)

SQJ560EP-T1_GE3

Description: MOSFET N/P-CH 60V 30A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 45nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101

Produkt ist nicht verfügbar

SQJ560EP-T1_GE3

Trans MOSFET N/P-CH 60V 30A/18A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 182 Stücke:

Lieferzeit 14-21 Tag (e)

93+	1.68 EUR
110+	1.37 EUR
143+	1.02 EUR

Mindestbestellmenge: 93

SQJ570EP-T1_GE3

Trans MOSFET N/P-CH 100V 15A/9.5A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ570EP-T1_GE3

MOSFET N Ch P Ch 100/-100V AEC-Q101 Qualified

auf Bestellung 52031 Stücke:

Lieferzeit 14-28 Tag (e)

19+	2.81 EUR
23+	2.3 EUR
100+	1.79 EUR
500+	1.52 EUR
1000+	1.24 EUR
3000+	1.16 EUR
6000+	1.1 EUR

Mindestbestellmenge: 19

SQJ570EP-T1_GE3

Description: VISHAY - SQJ570EP-T1_GE3 - Dual-MOSFET, Komplementärer n- und p-Kanal, 100 V, 100 V, 15 A, 15 A, 0.0365 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 15A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 100V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 15A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0365ohm
Verlustleistung, p-Kanal: 27W
Drain-Source-Spannung Vds, n-Kanal: 100V
euEccn: NLR
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0365ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 27W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (10-Jun-2022)

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ570EP-T1_GE3

Description: MOSFET N/P-CH 100V 15A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 9.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, 600pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 379 Stücke:

Lieferzeit 21-28 Tag (e)

10+	2.78 EUR
12+	2.28 EUR
100+	1.77 EUR

Mindestbestellmenge: 10

SQJ570EP-T1_GE3

Trans MOSFET N/P-CH 100V 15A/9.5A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	1.48 EUR

Mindestbestellmenge: 3000

SQJ570EP-T1_GE3

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ570EP-T1_GE3

Description: MOSFET N/P-CH 100V 15A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 9.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, 600pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101

Produkt ist nicht verfügbar

SQJ570EP-T1_GE3

Trans MOSFET N/P-CH 100V 15A/9.5A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ740EP-T1_GE3

Description: AUTOMOTIVE DUAL N-CHANNEL 40 V (
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 93W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3143pF @ 25V
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8L Dual BWL
Part Status: Active

Produkt ist nicht verfügbar

SQJ740EP-T1_GE3

Trans MOSFET N-CH 40V 123A Automotive AEC-Q101 T/R

Produkt ist nicht verfügbar

SQJ740EP-T1_GE3

Description: AUTOMOTIVE DUAL N-CHANNEL 40 V (
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 93W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3143pF @ 25V
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8L Dual BWL
Part Status: Active

auf Bestellung 50 Stücke:

Lieferzeit 21-28 Tag (e)

6+	4.99 EUR
10+	4.48 EUR

Mindestbestellmenge: 6

SQJ840EP-T1-GE3

Description: MOSFET N-CH 30V 30A PPAK SO-8

Produkt ist nicht verfügbar

SQJ840EP-T1_GE3

MOSFET 30V 30A 46W AEC-Q101 Qualified

Produkt ist nicht verfügbar

SQJ840EP-T1_GE3

Description: VISHAY - SQJ840EP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 30 A, 0.0075 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 30A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Verlustleistung Pd: 46W
Gate-Source-Schwellenspannung, max.: 1.7V
euEccn: NLR
Verlustleistung: 46W
Bauform - Transistor: PowerPAK SO
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
productTraceability: No
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0075ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0075ohm
SVHC: No SVHC (10-Jun-2022)

auf Bestellung 46 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ844AEP-T1_BE3

Description: DUAL N-CHANNEL 30-V (D-S) 175C M
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active

Produkt ist nicht verfügbar

SQJ844AEP-T1_BE3

Description: DUAL N-CHANNEL 30-V (D-S) 175C M
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active

Produkt ist nicht verfügbar

SQJ844AEP-T1_GE3

Trans MOSFET N-CH 30V 8A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ844AEP-T1_GE3

Description: MOSFET 2N-CH 30V 8A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active

Produkt ist nicht verfügbar

SQJ844AEP-T1_GE3

MOSFET N-Channel 30V AEC-Q101 Qualified

auf Bestellung 26888 Stücke:

Lieferzeit 14-28 Tag (e)

19+	2.81 EUR
23+	2.3 EUR
100+	1.79 EUR
500+	1.52 EUR
1000+	1.24 EUR
3000+	1.16 EUR
6000+	1.1 EUR

Mindestbestellmenge: 19

SQJ844AEP-T1_GE3

Description: MOSFET 2N-CH 30V 8A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active

Produkt ist nicht verfügbar

SQJ844EP-T1-GE3

Trans MOSFET N-CH 30V 8A Automotive 8-Pin PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ844EP-T1-GE3

Description: MOSFET 2N-CH 30V 8A PPAK 8SOIC

Produkt ist nicht verfügbar

SQJ848AEP-T1-GE3

Description: MOSFET N-CH D-S 40V PPAK 8SOIC

Produkt ist nicht verfügbar

SQJ848EP-T1-GE3

Description: MOSFET N-CH D-S 40V PPAK 8SOIC

Produkt ist nicht verfügbar

SQJ848EP-T1_GE3

Description: MOSFET N-CH 40V 47A POWERPAKSO-8

auf Bestellung 2345 Stücke:

Lieferzeit 21-28 Tag (e)

SQJ848EP-T1_GE3

Description: MOSFET N-CH 40V 47A POWERPAKSO-8

Produkt ist nicht verfügbar

SQJ848EPT1-GE3

auf Bestellung 1800 Stücke:

Lieferzeit 21-28 Tag (e)

SQJ850EP-T1-GE3

Description: MOSFET N-CH 60V 24A PPAK SO-8

Produkt ist nicht verfügbar

SQJ850EP-T1_GE3

Trans MOSFET N-CH 60V 24A Automotive 5-Pin(4+Tab) PowerPAK SO EP T/R

Produkt ist nicht verfügbar

SQJ850EP-T1_GE3

Trans MOSFET N-CH 60V 24A Automotive 5-Pin(4+Tab) PowerPAK SO EP T/R

Produkt ist nicht verfügbar

SQJ850EP-T1_GE3

Description: MOSFET N-CH 60V 24A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10.3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 30 V
Qualification: AEC-Q101

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.85 EUR
6000+	1.78 EUR

Mindestbestellmenge: 3000

SQJ850EP-T1_GE3

Trans MOSFET N-CH 60V 24A Automotive 5-Pin(4+Tab) PowerPAK SO EP T/R

Produkt ist nicht verfügbar

SQJ850EP-T1_GE3

MOSFET RECOMMENDED ALT 78-SQJ464EP-T1_GE3

Produkt ist nicht verfügbar

SQJ850EP-T1_GE3

Description: MOSFET N-CH 60V 24A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10.3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 30 V
Qualification: AEC-Q101

auf Bestellung 8770 Stücke:

Lieferzeit 21-28 Tag (e)

7+	4.11 EUR
10+	3.41 EUR
100+	2.71 EUR
500+	2.3 EUR
1000+	1.95 EUR

Mindestbestellmenge: 7

SQJ850EP-T2_GE3

Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10.3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 30 V

auf Bestellung 8990 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.48 EUR
10+	2.84 EUR
100+	2.21 EUR
500+	1.87 EUR
1000+	1.53 EUR

Mindestbestellmenge: 8

SQJ850EP-T2_GE3

MOSFET N-CHANNEL 60-V (D-S) 175C MOSFET

auf Bestellung 52739 Stücke:

Lieferzeit 14-28 Tag (e)

16+	3.41 EUR
19+	2.81 EUR
100+	2.17 EUR
500+	1.84 EUR
1000+	1.73 EUR
3000+	1.47 EUR

Mindestbestellmenge: 16

SQJ850EP-T2_GE3

Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10.3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 30 V

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.44 EUR

Mindestbestellmenge: 3000

SQJ858AEP-T1-GE3

Description: MOSFET N-CH 40V 58A PPAK SO-8

Produkt ist nicht verfügbar

SQJ858AEP-T1_BE3

MOSFET N-CHANNEL 40-V (D-S) 175C MOSFET

auf Bestellung 5939 Stücke:

Lieferzeit 14-28 Tag (e)

SQJ858AEP-T1_GE3

Description: MOSFET N-CH 40V 58A PPAK SO-8

auf Bestellung 9000 Stücke:

Lieferzeit 21-28 Tag (e)

SQJ858AEP-T1_GE3

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 33A; 48W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 33A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

Produkt ist nicht verfügbar

SQJ858AEP-T1_GE3

Produkt ist nicht verfügbar

SQJ858AEP-T1_GE3

MOSFET 40V 58A 48W AEC-Q101 Qualified

auf Bestellung 9365 Stücke:

Lieferzeit 14-28 Tag (e)

SQJ858AEP-T1_GE3

Trans MOSFET N-CH 40V 58A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ858AEP-T1_GE3

Description: MOSFET N-CH 40V 58A PPAK SO-8

auf Bestellung 10799 Stücke:

Lieferzeit 21-28 Tag (e)

SQJ858EP-T1_GE3

MOSFET RECOMMENDED ALT SQJ858AEP-T1_GE3

Produkt ist nicht verfügbar

SQJ858EP-T1_GE3

Trans MOSFET N-CH 40V 75A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ860EP-T1_BE3

Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

12+	2.18 EUR
14+	1.91 EUR
100+	1.32 EUR
500+	1.1 EUR
1000+	0.94 EUR

Mindestbestellmenge: 12

SQJ860EP-T1_BE3

Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.84 EUR
6000+	0.79 EUR

Mindestbestellmenge: 3000

SQJ860EP-T1_GE3

Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 12000 Stücke:

Lieferzeit 21-28 Tag (e)

12+	2.18 EUR
14+	1.91 EUR
100+	1.32 EUR
500+	1.1 EUR
1000+	0.94 EUR

Mindestbestellmenge: 12

SQJ860EP-T1_GE3

Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 12000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.84 EUR
6000+	0.79 EUR
9000+	0.73 EUR

Mindestbestellmenge: 3000

SQJ860EP-T1_GE3

MOSFET 40V Vds 60A Id AEC-Q101 Qualified

auf Bestellung 11060 Stücke:

Lieferzeit 14-28 Tag (e)

24+	2.23 EUR
27+	1.94 EUR
100+	1.34 EUR
500+	1.12 EUR
1000+	0.95 EUR
3000+	0.84 EUR
6000+	0.79 EUR

Mindestbestellmenge: 24

SQJ868EP-T1_BE3

Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 7.35mOhm @ 14A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 20 V

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

11+	2.55 EUR
12+	2.28 EUR
100+	1.78 EUR
500+	1.47 EUR
1000+	1.16 EUR

Mindestbestellmenge: 11

SQJ868EP-T1_BE3

Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 7.35mOhm @ 14A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 20 V

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.08 EUR

Mindestbestellmenge: 3000

SQJ868EP-T1_GE3

SQJ868EP-T1-GE3 SMD N channel transistors

Produkt ist nicht verfügbar

SQJ868EP-T1_GE3

Description: VISHAY - SQJ868EP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 58 A, 0.0062 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 58A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 48W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pins
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0062ohm

auf Bestellung 2225 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ868EP-T1_GE3

Description: MOSFET N-CH 40V 58A POWERPAKSOL

Produkt ist nicht verfügbar

SQJ868EP-T1_GE3

MOSFET Dual N-Ch 40V AEC-Q101 Qualified

auf Bestellung 35993 Stücke:

Lieferzeit 14-28 Tag (e)

27+	1.93 EUR
30+	1.77 EUR
100+	1.55 EUR
500+	1.4 EUR
1000+	1.11 EUR
3000+	1 EUR
6000+	0.99 EUR

Mindestbestellmenge: 27

SQJ868EP-T1_GE3

auf Bestellung 2225 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ868EP-T1_GE3

Description: MOSFET N-CH 40V 58A POWERPAKSOL

auf Bestellung 2985 Stücke:

Lieferzeit 21-28 Tag (e)

SQJ872EP-T1_GE3

MOSFET 150V Vds 20V Vgs PowerPAK SO-8L

auf Bestellung 3000 Stücke:

Lieferzeit 14-28 Tag (e)

SQJ872EP-T1_GE3

Description: MOSFET N-CH 150V 24.5A PPAK SO-8

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

SQJ872EP-T1_GE3

Trans MOSFET N-CH 150V 24.5A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ872EP-T1_GE3

Description: MOSFET N-CH 150V 24.5A PPAK SO-8

auf Bestellung 5535 Stücke:

Lieferzeit 21-28 Tag (e)

SQJ886EP-T1_GE3

Description: MOSFET N-CH 40V 60A PPAK SO-8

auf Bestellung 1 Stücke:

Lieferzeit 21-28 Tag (e)

SQJ886EP-T1_GE3

Description: MOSFET N-CH 40V 60A PPAK SO-8

Produkt ist nicht verfügbar

SQJ886EP-T1_GE3

MOSFET 40V 60A 55W AEC-Q101 Qualified

auf Bestellung 8429 Stücke:

Lieferzeit 14-28 Tag (e)

SQJ910AEP-T1_BE3

Description: MOSFET 2N-CH 30V 30A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 2970 Stücke:

Lieferzeit 21-28 Tag (e)

9+	2.96 EUR
11+	2.42 EUR
100+	1.88 EUR
500+	1.6 EUR
1000+	1.3 EUR

Mindestbestellmenge: 9

SQJ910AEP-T1_BE3

Description: MOSFET 2N-CH 30V 30A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101

Produkt ist nicht verfügbar

SQJ910AEP-T1_GE3

MOSFET Dual N-Channel 30V AEC-Q101 Qualified

auf Bestellung 10 Stücke:

Lieferzeit 14-28 Tag (e)

16+	3.25 EUR
20+	2.65 EUR
100+	2.09 EUR
500+	1.77 EUR
1000+	1.44 EUR
3000+	1.4 EUR

Mindestbestellmenge: 16

SQJ910AEP-T1_GE3

Description: VISHAY - SQJ910AEP-T1_GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 30 A, 30 A, 0.0058 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 30A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 30A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0058ohm
Verlustleistung, p-Kanal: 48W
euEccn: NLR
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0058ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 48W
SVHC: No SVHC (10-Jun-2022)

auf Bestellung 2360 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ910AEP-T1_GE3

Description: MOSFET 2 N-CH 30V POWERPAK SO8

Produkt ist nicht verfügbar

SQJ910AEP-T1_GE3

Description: VISHAY - SQJ910AEP-T1_GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 30 A, 30 A, 0.0058 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 30A
Dauer-Drainstrom Id, p-Kanal: 30A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 30A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0058ohm
Verlustleistung, p-Kanal: 48W
euEccn: NLR
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 4Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0058ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 48W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (10-Jun-2022)

auf Bestellung 2360 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ910AEP-T1_GE3

Description: MOSFET 2 N-CH 30V POWERPAK SO8

Produkt ist nicht verfügbar

SQJ910AEP-T1_GE3

Trans MOSFET N-CH 30V 30A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ910AEP-T2_GE3

Description: DUAL N-CHANNEL 30-V (D-S) 175C M

Produkt ist nicht verfügbar

SQJ910AEP-T2_GE3

MOSFET 30V Vds 20V Vgs PowerPAK SO-8L

Produkt ist nicht verfügbar

SQJ910EP-T1-GE3

Trans MOSFET N-CH 30V 8A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ912AEP-T1_BE3

MOSFET DUAL N-CHANNEL 40-V (D-S) 175C MOSFET

auf Bestellung 3000 Stücke:

Lieferzeit 14-28 Tag (e)

SQJ912AEP-T1_GE3

MOSFET 40V 30A 48W AEC-Q101 Qualified

auf Bestellung 40630 Stücke:

Lieferzeit 14-28 Tag (e)

18+	2.96 EUR
22+	2.44 EUR
100+	1.9 EUR
500+	1.61 EUR
1000+	1.31 EUR
3000+	1.23 EUR
6000+	1.17 EUR

Mindestbestellmenge: 18

SQJ912AEP-T1_GE3

Description: MOSFET 2N-CH 40V 30A PPAK SO-8

auf Bestellung 5369 Stücke:

Lieferzeit 21-28 Tag (e)

SQJ912AEP-T1_GE3

Description: MOSFET 2N-CH 40V 30A PPAK SO-8

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

SQJ912AEP-T2_BE3

MOSFET DUAL N-CH 40V (D-S)

auf Bestellung 2159 Stücke:

Lieferzeit 14-28 Tag (e)

SQJ912BEP-T1_GE3

MOSFET Dual N-Ch 40V AEC-Q101 Qualified

auf Bestellung 16923 Stücke:

Lieferzeit 14-28 Tag (e)

17+	3.15 EUR
21+	2.59 EUR
100+	2.05 EUR
500+	1.77 EUR
1000+	1.44 EUR
3000+	1.35 EUR
6000+	1.29 EUR

Mindestbestellmenge: 17

SQJ912BEP-T1_GE3

Description: MOSFET N-CH DUAL 40V PPSO-8L
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Rds On (Max) @ Id, Vgs: 11mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active

auf Bestellung 2598 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.67 EUR
10+	3.27 EUR
100+	2.55 EUR
500+	2.11 EUR
1000+	1.67 EUR

Mindestbestellmenge: 8

SQJ912BEP-T1_GE3

Description: MOSFET N-CH DUAL 40V PPSO-8L
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Rds On (Max) @ Id, Vgs: 11mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active

Produkt ist nicht verfügbar

SQJ912BEP-T1_GE3

Description: VISHAY - SQJ912BEP-T1_GE3 - Dual-MOSFET, n-Kanal, 40 V, 30 A, 0.009 ohm, PowerPAK SO, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40
Dauer-Drainstrom Id: 30
Rds(on)-Messspannung Vgs: 10
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 48
Bauform - Transistor: PowerPAK SO
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: TrenchFET
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.009
Betriebstemperatur, max.: 175
Schwellenspannung Vgs: 1.5
SVHC: No SVHC (19-Jan-2021)

auf Bestellung 2990 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ912DEP-T1_GE3

Description: AUTOMOTIVE DUAL N-CHANNEL 40 V (

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

SQJ912DEP-T1_GE3

MOSFET DUAL N-CHANNEL 40-V (D-S) 175C MOSFE

auf Bestellung 41663 Stücke:

Lieferzeit 14-28 Tag (e)

22+	2.44 EUR
27+	2 EUR
100+	1.55 EUR
500+	1.32 EUR
1000+	1.07 EUR
3000+	1.01 EUR
6000+	0.96 EUR

Mindestbestellmenge: 22

SQJ912EP-T1-GE3

Description: MOSFET 2N-CH 40V 8A 8-SO

Produkt ist nicht verfügbar

SQJ914EP-T1_BE3

Description: DUAL N-CHANNEL 30-V (D-S) 175C M

Produkt ist nicht verfügbar

SQJ914EP-T1_BE3

Description: DUAL N-CHANNEL 30-V (D-S) 175C M

Produkt ist nicht verfügbar

SQJ914EP-T1_GE3

DUAL N-CHANNEL 30-V (D-S) 175C MOSFET

Produkt ist nicht verfügbar

SQJ914EP-T1_GE3

Description: MOSFET 2 N-CH 30V POWERPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active

Produkt ist nicht verfügbar

SQJ914EP-T1_GE3

MOSFET Dual 30V Vds 20V Vgs AEC-Q101 Qualified

auf Bestellung 2194 Stücke:

Lieferzeit 14-28 Tag (e)

SQJ914EP-T1_GE3

Description: MOSFET 2 N-CH 30V POWERPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active

auf Bestellung 2000 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.38 EUR
10+	3.03 EUR
100+	2.36 EUR
500+	1.95 EUR
1000+	1.54 EUR

Mindestbestellmenge: 8

SQJ940EP-T1_GE3

Trans MOSFET N-CH 40V 15A/18A Automotive 5-Pin(4+Tab) PowerPAK SO EP T/R

Produkt ist nicht verfügbar

SQJ940EP-T1_GE3

MOSFET 40V 15A AEC-Q101 Qualified

auf Bestellung 56622 Stücke:

Lieferzeit 14-28 Tag (e)

16+	3.41 EUR
18+	2.91 EUR
100+	2.39 EUR
500+	1.96 EUR
1000+	1.55 EUR
3000+	1.37 EUR
6000+	1.33 EUR

Mindestbestellmenge: 16

SQJ940EP-T1_GE3

Description: MOSFET 2N-CH 40V 15A PPAK SO-8

Produkt ist nicht verfügbar

SQJ940EP-T1_GE3

Description: VISHAY - SQJ940EP-T1_GE3 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 15 A, 15 A, 0.0133 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 15A
hazardous: false
rohsPhthalatesCompliant: YES
Drain-Source-Spannung Vds, p-Kanal: 40V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 15A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0133ohm
Verlustleistung, p-Kanal: 48W
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Anzahl der Pins: 8Pins
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0133ohm
productTraceability: Yes-Date/Lot Code
Verlustleistung, n-Kanal: 48W
Betriebstemperatur, max.: 175°C

auf Bestellung 14815 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ940EP-T1_GE3
Produktcode: 180512

IC > IC andere

Produkt ist nicht verfügbar

SQJ940EP-T1_GE3

Description: MOSFET 2N-CH 40V 15A PPAK SO-8

Produkt ist nicht verfügbar

SQJ940EP-T1_GE3

Trans MOSFET N-CH 40V 15A/18A Automotive 5-Pin(4+Tab) PowerPAK SO EP T/R

Produkt ist nicht verfügbar

SQJ941EP-T1-GE3

Description: MOSFET 2P-CH 30V 8A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 55W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101

Produkt ist nicht verfügbar

SQJ941EP-T1_GE3

Trans MOSFET P-CH 30V 8A Automotive 8-Pin PowerPAK SO T/R

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SQJ942EP-T1_GE3

Description: MOSFET 2 N-CH 40V POWERPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 17W, 48W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 45A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 809pF @ 20V, 1451pF @ 20V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.8A, 10V, 11mOhm @ 10.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.7nC @ 10V, 33.8nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.33 EUR

Mindestbestellmenge: 3000

SQJ942EP-T1_GE3

MOSFET 40V 15A AEC-Q101 Qualified

Produkt ist nicht verfügbar

SQJ942EP-T1_GE3

Description: MOSFET 2 N-CH 40V POWERPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 17W, 48W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 45A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 809pF @ 20V, 1451pF @ 20V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.8A, 10V, 11mOhm @ 10.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.7nC @ 10V, 33.8nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

9+	3.15 EUR
10+	2.81 EUR
100+	2.19 EUR
500+	1.81 EUR
1000+	1.43 EUR

Mindestbestellmenge: 9

SQJ946EP-T1_GE3

Description: MOSFET 2 N-CH 40V POWERPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
Rds On (Max) @ Id, Vgs: 33mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active

auf Bestellung 1 Stücke:

Lieferzeit 21-28 Tag (e)

SQJ946EP-T1_GE3

MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified

auf Bestellung 5940 Stücke:

Lieferzeit 14-28 Tag (e)

24+	2.22 EUR
29+	1.83 EUR
100+	1.53 EUR
500+	1.2 EUR
1000+	0.96 EUR
3000+	0.86 EUR

Mindestbestellmenge: 24

SQJ946EP-T1_GE3

Description: MOSFET 2 N-CH 40V POWERPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
Rds On (Max) @ Id, Vgs: 33mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active

Produkt ist nicht verfügbar

SQJ951EP-T1-GE3

Trans MOSFET P-CH 30V 30A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ951EP-T1_BE3

Trans MOSFET P-CH 30V 30A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ951EP-T1_BE3

Description: MOSFET 2P-CH 30V 30A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 56W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 6939 Stücke:

Lieferzeit 21-28 Tag (e)

7+	3.82 EUR
10+	3.12 EUR
100+	2.43 EUR
500+	2.06 EUR
1000+	1.67 EUR

Mindestbestellmenge: 7

SQJ951EP-T1_BE3

Description: MOSFET 2P-CH 30V 30A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 56W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.58 EUR

Mindestbestellmenge: 3000

SQJ951EP-T1_BE3

Trans MOSFET P-CH 30V 30A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ951EP-T1_BE3

MOSFET DUAL P-CHANNEL 30V

auf Bestellung 58577 Stücke:

Lieferzeit 14-28 Tag (e)

14+	3.74 EUR
17+	3.07 EUR
100+	2.38 EUR
500+	2.02 EUR
1000+	1.65 EUR
3000+	1.55 EUR
6000+	1.49 EUR

Mindestbestellmenge: 14

SQJ951EP-T1_GE3

Description: VISHAY - SQJ951EP-T1_GE3 - Dual-MOSFET, p-Kanal, 30 V, 30 V, 30 A, 30 A, 0.014 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 30A
Dauer-Drainstrom Id, p-Kanal: 30A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 30A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.014ohm
Verlustleistung, p-Kanal: 56W
euEccn: NLR
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 4Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.014ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Verlustleistung, n-Kanal: 56W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (10-Jun-2022)

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ951EP-T1_GE3

Trans MOSFET P-CH 30V 30A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ951EP-T1_GE3

MOSFET Dual P-Channel 30V AEC-Q101 Qualified

auf Bestellung 26433 Stücke:

Lieferzeit 14-28 Tag (e)

14+	3.74 EUR
17+	3.07 EUR
100+	2.38 EUR
500+	2.02 EUR
1000+	1.65 EUR
3000+	1.55 EUR
6000+	1.47 EUR

Mindestbestellmenge: 14

SQJ951EP-T1_GE3

Description: MOSFET 2P-CH 30V 30A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 56W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 2995 Stücke:

Lieferzeit 21-28 Tag (e)

7+	3.82 EUR
10+	3.12 EUR
100+	2.43 EUR
500+	2.06 EUR
1000+	1.67 EUR

Mindestbestellmenge: 7

SQJ951EP-T1_GE3

Description: VISHAY - SQJ951EP-T1_GE3 - Dual-MOSFET, p-Kanal, 30 V, 30 V, 30 A, 30 A, 0.014 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 30A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 30A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.014ohm
Verlustleistung, p-Kanal: 56W
euEccn: NLR
Bauform - Transistor: PowerPAK SO
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.014ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Verlustleistung, n-Kanal: 56W
SVHC: No SVHC (10-Jun-2022)

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ951EP-T1_GE3

Description: MOSFET 2P-CH 30V 30A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 56W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101

Produkt ist nicht verfügbar

SQJ951EP-T1_GE3

Trans MOSFET P-CH 30V 30A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ951EP-T1_GE3

Trans MOSFET P-CH 30V 30A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ952EP-T1-GE3

Trans MOSFET N-CH 60V 23A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 207 Stücke:

Lieferzeit 14-21 Tag (e)

111+	1.42 EUR
129+	1.17 EUR
130+	1.12 EUR
170+	0.82 EUR

Mindestbestellmenge: 111

SQJ952EP-T1-GE3

Trans MOSFET N-CH 60V 23A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ952EP-T1_BE3

Description: DUAL N-CHANNEL 60-V (D-S) 175C M

Produkt ist nicht verfügbar

SQJ952EP-T1_BE3

Description: DUAL N-CHANNEL 60-V (D-S) 175C M

Produkt ist nicht verfügbar

SQJ952EP-T1_GE3

MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified

auf Bestellung 8700 Stücke:

Lieferzeit 14-28 Tag (e)

SQJ952EP-T1_GE3

Description: VISHAY - SQJ952EP-T1_GE3 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 23 A, 23 A, 0.012 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 23A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 60V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 23A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.012ohm
Verlustleistung, p-Kanal: 25W
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 4Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.012ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 25W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (10-Jun-2022)

auf Bestellung 8950 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ952EP-T1_GE3

Description: MOSFET 2 N-CH 60V POWERPAK SO8

Produkt ist nicht verfügbar

SQJ952EP-T1_GE3

auf Bestellung 8950 Stücke:

Lieferzeit 14-21 Tag (e)

SQJ952EP-T1_GE3

Description: MOSFET 2 N-CH 60V POWERPAK SO8

Produkt ist nicht verfügbar

SQJ956EP-T1_GE3

Description: MOSFET 2 N-CH 60V POWERPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1395pF @ 30V
Rds On (Max) @ Id, Vgs: 26.7mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active

auf Bestellung 22 Stücke:

Lieferzeit 21-28 Tag (e)

10+	2.89 EUR
11+	2.57 EUR

Mindestbestellmenge: 10

SQJ956EP-T1_GE3

Description: MOSFET 2 N-CH 60V POWERPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1395pF @ 30V
Rds On (Max) @ Id, Vgs: 26.7mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active

Produkt ist nicht verfügbar

SQJ956EP-T1_GE3

MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified

auf Bestellung 3000 Stücke:

Lieferzeit 14-28 Tag (e)

SQJ958EP-T1_GE3

MOSFET Dual 60V PowerPAK AEC-Q101 Qualified

auf Bestellung 17947 Stücke:

Lieferzeit 14-28 Tag (e)

19+	2.78 EUR
22+	2.47 EUR
100+	1.92 EUR
500+	1.59 EUR
1000+	1.26 EUR
3000+	1.17 EUR
24000+	1.12 EUR

Mindestbestellmenge: 19

SQJ958EP-T1_GE3

Description: MOSFET 2 N-CH 60V POWERPAK SO8

Produkt ist nicht verfügbar

SQJ960EP-T1-GE3

Description: MOSFET 2N-CH 60V 8A 8SO

Produkt ist nicht verfügbar

SQJ960EP-T1-GE3

Trans MOSFET N-CH 60V 8A Automotive 8-Pin PowerPAK SO T/R

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SQJ960EP-T1-GE3

Trans MOSFET N-CH 60V 8A Automotive 5-Pin(4+Tab) PowerPAK SO EP T/R

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SQJ960EP-T1-GE3

MOSFET RECOMMENDED ALT 78-SQJ960EP-T1_GE3

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SQJ960EP-T1_GE3
Produktcode: 186737

Transistoren > MOSFET N-CH

Produkt ist nicht verfügbar

SQJ960EP-T1_GE3

Trans MOSFET N-CH 60V 8A Automotive 8-Pin PowerPAK SO T/R

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SQJ960EP-T1_GE3

MOSFET 60V 8A 34W AEC-Q101 Qualified

auf Bestellung 81446 Stücke:

Lieferzeit 14-28 Tag (e)

11+	5.04 EUR
13+	4.21 EUR
100+	3.33 EUR
250+	3.09 EUR
500+	2.81 EUR
1000+	2.4 EUR
3000+	2.28 EUR

Mindestbestellmenge: 11

SQJ960EP-T1_GE3

Description: MOSFET 2N-CH 60V 8A
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active

auf Bestellung 2545 Stücke:

Lieferzeit 21-28 Tag (e)

5+	5.64 EUR
10+	5.07 EUR
100+	4.07 EUR
500+	3.35 EUR
1000+	2.77 EUR

Mindestbestellmenge: 5

SQJ960EP-T1_GE3

Description: MOSFET 2N-CH 60V 8A
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active

Produkt ist nicht verfügbar

SQJ962EP-T1-GE3

Description: MOSFET 2N-CH 60V 8A 8SO

Produkt ist nicht verfügbar

SQJ963EP-T1-GE3

Trans MOSFET P-CH 60V 8A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

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SQJ963EP-T1-GE3

MOSFET RECOMMENDED ALT 781-SQJ963EP-T1_GE3

Produkt ist nicht verfügbar

SQJ963EP-T1_GE3

Description: MOSFET 2P-CH 60V 8A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 30V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active

auf Bestellung 2399 Stücke:

Lieferzeit 21-28 Tag (e)

6+	4.37 EUR
10+	3.62 EUR
100+	2.89 EUR
500+	2.44 EUR
1000+	2.07 EUR

Mindestbestellmenge: 6

SQJ963EP-T1_GE3

Trans MOSFET P-CH 60V 8A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ963EP-T1_GE3

SQJ963EP-T1-GE3 Vishay MOSFETs Transistor P-CH 60V 8A Automotive 5-Pin(4+Tab) PowerPAK SO - Arrow.com

Produkt ist nicht verfügbar

SQJ963EP-T1_GE3

MOSFET -60V -8A 27W AEC-Q101 Qualified

auf Bestellung 26059 Stücke:

Lieferzeit 14-28 Tag (e)

13+	4.29 EUR
15+	3.56 EUR
100+	2.83 EUR
250+	2.6 EUR
500+	2.37 EUR
1000+	2.03 EUR
3000+	1.93 EUR

Mindestbestellmenge: 13

SQJ963EP-T1_GE3

Description: MOSFET 2P-CH 60V 8A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 30V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active

Produkt ist nicht verfügbar

SQJ963EP-T1_GE3

SQJ963EP-T1-GE3 Vishay MOSFETs Transistor P-CH 60V 8A Automotive 5-Pin(4+Tab) PowerPAK SO - Arrow.com

Produkt ist nicht verfügbar

SQJ964EP-T1-GE3

Description: MOSFET 2N-CH 60V 8A 8SOIC

Produkt ist nicht verfügbar

SQJ968EP-T1-GE3

Description: VISHAY - SQJ968EP-T1-GE3 - Dual-MOSFET, n-Kanal, 60 V, 18 A, 0.028 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60
Dauer-Drainstrom Id: 18
Dauer-Drainstrom Id, p-Kanal: 18
hazardous: false
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 60
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 18
Drain-Source-Durchgangswiderstand, p-Kanal: 0.028
Verlustleistung Pd: 25
Gate-Source-Schwellenspannung, max.: 2
Verlustleistung, p-Kanal: 25
Drain-Source-Spannung Vds, n-Kanal: 60
euEccn: NLR
Bauform - Transistor: PowerPAK SO
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.028
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 25
Betriebswiderstand, Rds(on): 0.028
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
SVHC: To Be Advised

Produkt ist nicht verfügbar

SQJ968EP-T1-GE3

Trans MOSFET N-CH 60V 18A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ968EP-T1_GE3

Description: MOSFET 2 N-CH 60V POWERPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
Power - Max: 42W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 714pF @ 30V
Rds On (Max) @ Id, Vgs: 33.6mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active

auf Bestellung 2990 Stücke:

Lieferzeit 21-28 Tag (e)

10+	2.89 EUR
11+	2.58 EUR
100+	2.01 EUR
500+	1.66 EUR
1000+	1.31 EUR

Mindestbestellmenge: 10

SQJ968EP-T1_GE3

MOSFET Dual N-Channel 60V AEC-Q101 Qualified

auf Bestellung 33438 Stücke:

Lieferzeit 14-28 Tag (e)

21+	2.56 EUR
25+	2.09 EUR
100+	1.62 EUR
500+	1.38 EUR
1000+	1.12 EUR
3000+	1.05 EUR
6000+	1 EUR

Mindestbestellmenge: 21

SQJ968EP-T1_GE3

Description: MOSFET 2 N-CH 60V POWERPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
Power - Max: 42W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 714pF @ 30V
Rds On (Max) @ Id, Vgs: 33.6mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active

Produkt ist nicht verfügbar

SQJ968EP-T1_GE3

Trans MOSFET N-CH 60V 18A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ968EP-T1_GE3

Trans MOSFET N-CH 60V 23.5A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO EP T/R

Produkt ist nicht verfügbar

SQJ970EP-T1-GE3

Description: MOSFET 2N-CH 40V 8A 8SOIC

Produkt ist nicht verfügbar

SQJ970EPT1-GE3

auf Bestellung 15 Stücke:

Lieferzeit 21-28 Tag (e)

SQJ974EP-T1-BE3

MOSFET DUAL N-CHANNEL 100-V (D-S) 175

Produkt ist nicht verfügbar

SQJ974EP-T1_BE3

Dual N-Channel MOSFET

Produkt ist nicht verfügbar

SQJ974EP-T1_BE3

Description: DUAL N-CHANNEL 100-V (D-S) 175C
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual

Produkt ist nicht verfügbar

SQJ974EP-T1_BE3

MOSFET DUAL N-CHANNEL 100-V (D-S) 175C MOSFET

auf Bestellung 3746 Stücke:

Lieferzeit 14-28 Tag (e)

18+	2.96 EUR
22+	2.44 EUR
100+	1.9 EUR
500+	1.61 EUR
1000+	1.52 EUR
3000+	1.29 EUR
6000+	1.21 EUR

Mindestbestellmenge: 18

SQJ974EP-T1_BE3

Description: DUAL N-CHANNEL 100-V (D-S) 175C
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual

Produkt ist nicht verfügbar

SQJ974EP-T1_GE3

Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 17A; 16W; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 16W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 25.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

SQJ974EP-T1_GE3

Trans MOSFET N-CH 100V 30A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ974EP-T1_GE3

Produkt ist nicht verfügbar

SQJ974EP-T1_GE3

Description: MOSFET 2 N-CH 100V POWERPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active

Produkt ist nicht verfügbar

SQJ974EP-T1_GE3

Trans MOSFET N-CH 100V 30A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJ974EP-T1_GE3

MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified

auf Bestellung 59147 Stücke:

Lieferzeit 512-526 Tag (e)

16+	3.41 EUR
18+	2.99 EUR
100+	2.36 EUR
500+	1.9 EUR
1000+	1.5 EUR
3000+	1.31 EUR

Mindestbestellmenge: 16

SQJ974EP-T1_GE3

Description: MOSFET 2 N-CH 100V POWERPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active

auf Bestellung 853 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.54 EUR
10+	2.88 EUR
100+	2.24 EUR
500+	1.9 EUR

Mindestbestellmenge: 8

SQJ980AEP-T1_BE3

Description: DUAL N-CHANNEL 75-V (D-S) 175C M
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W (Tc)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 35V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

9+	3.09 EUR
10+	2.76 EUR
100+	2.15 EUR
500+	1.78 EUR
1000+	1.41 EUR

Mindestbestellmenge: 9

SQJ980AEP-T1_BE3

Description: DUAL N-CHANNEL 75-V (D-S) 175C M
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W (Tc)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 35V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.31 EUR

Mindestbestellmenge: 3000

SQJ980AEP-T1_GE3

Description: MOSFET 2 N-CH 75V POWERPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W (Tc)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 35V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active

auf Bestellung 2984 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.41 EUR
10+	3.04 EUR
100+	2.37 EUR
500+	1.96 EUR
1000+	1.55 EUR

Mindestbestellmenge: 8

SQJ980AEP-T1_GE3

MOSFET Dual N-Channel 75V AEC-Q101 Qualified

auf Bestellung 31643 Stücke:

Lieferzeit 14-28 Tag (e)

18+	3.04 EUR
21+	2.49 EUR
100+	1.94 EUR
500+	1.64 EUR
1000+	1.34 EUR
3000+	1.26 EUR
6000+	1.2 EUR

Mindestbestellmenge: 18

SQJ980AEP-T1_GE3

Description: MOSFET 2 N-CH 75V POWERPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W (Tc)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 35V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active

Produkt ist nicht verfügbar

SQJ990EP-T1_GE3

MOSFET Dual N-Ch 100V Vds AEC-Q101 Qualified

auf Bestellung 5991 Stücke:

Lieferzeit 14-28 Tag (e)

16+	3.3 EUR
18+	2.94 EUR
100+	2.3 EUR
500+	1.9 EUR
1000+	1.5 EUR
3000+	1.35 EUR
6000+	1.33 EUR

Mindestbestellmenge: 16

SQJ990EP-T1_GE3

Trans MOSFET N-CH 100V 17A/34A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO

Produkt ist nicht verfügbar

SQJ990EP-T1_GE3

Description: MOSFET 2 N-CH 100V POWERPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V, 650pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 6A, 10V, 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Part Status: Active

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.67 EUR
10+	3.27 EUR
100+	2.55 EUR
500+	2.11 EUR
1000+	1.67 EUR

Mindestbestellmenge: 8

SQJ990EP-T1_GE3

Trans MOSFET N-CH 100V 17A/34A Automotive 5-Pin(4+Tab) PowerPAK SO

Produkt ist nicht verfügbar

SQJ990EP-T1_GE3

Trans MOSFET N-CH 100V 17A/34A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO

Produkt ist nicht verfügbar

SQJ990EP-T1_GE3

Description: MOSFET 2 N-CH 100V POWERPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V, 650pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 6A, 10V, 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Part Status: Active

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.55 EUR

Mindestbestellmenge: 3000

SQJ992EP-T1-GE3

Description: VISHAY - SQJ992EP-T1-GE3 - Dual-MOSFET, n-Kanal, 60 V, 15 A, 0.047 ohm, PowerPAK SO, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60
Dauer-Drainstrom Id: 15
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 34
Gate-Source-Schwellenspannung, max.: 2
Bauform - Transistor: PowerPAK SO
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.047
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
SVHC: To Be Advised

Produkt ist nicht verfügbar

SQJ992EP-T1_BE3

Description: DUAL N-CHANNEL 60-V (D-S) 175C M

Produkt ist nicht verfügbar

SQJ992EP-T1_BE3

Description: DUAL N-CHANNEL 60-V (D-S) 175C M

Produkt ist nicht verfügbar

SQJ992EP-T1_GE3

Trans MOSFET N-CH 60V 15A Automotive T/R

Produkt ist nicht verfügbar

SQJ992EP-T1_GE3

Description: MOSFET 2N-CH 60V 15A POWERPAKSO8

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

SQJ992EP-T1_GE3

MOSFET Dual N-Channel 60V AEC-Q101 Qualified

auf Bestellung 5600 Stücke:

Lieferzeit 14-28 Tag (e)

SQJ992EP-T1_GE3

Description: MOSFET 2N-CH 60V 15A POWERPAKSO8

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

SQJ992EP-T2_GE3

Description: MOSFET 2N-CH 60V 15A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101

auf Bestellung 10919 Stücke:

Lieferzeit 21-28 Tag (e)

12+	2.18 EUR
15+	1.79 EUR
100+	1.39 EUR
500+	1.18 EUR
1000+	0.96 EUR

Mindestbestellmenge: 12

SQJ992EP-T2_GE3

Description: MOSFET 2N-CH 60V 15A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101

auf Bestellung 9000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.91 EUR
6000+	0.86 EUR
9000+	0.82 EUR

Mindestbestellmenge: 3000

SQJA00EP-T1_GE3

Description: MOSFET N-CH 60V 30A PPAK SO-8

auf Bestellung 1683 Stücke:

Lieferzeit 21-28 Tag (e)

SQJA00EP-T1_GE3

MOSFET 60V Vds 30A Id AEC-Q101 Qualified

auf Bestellung 2946 Stücke:

Lieferzeit 14-28 Tag (e)

SQJA00EP-T1_GE3

Description: MOSFET N-CH 60V 30A PPAK SO-8

Produkt ist nicht verfügbar

SQJA00EP-T1_GE3

MOSFET 60V Vds 30A Id AEC-Q101 Qualified

auf Bestellung 5916 Stücke:

Lieferzeit 14-28 Tag (e)

23+	2.27 EUR
28+	1.87 EUR
100+	1.45 EUR
500+	1.23 EUR
1000+	1 EUR
3000+	0.94 EUR
6000+	0.9 EUR

Mindestbestellmenge: 23

SQJA02EP-T1_GE3

Description: MOSFET N-CH 60V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V

auf Bestellung 2970 Stücke:

Lieferzeit 21-28 Tag (e)

7+	3.8 EUR
10+	3.39 EUR
100+	2.64 EUR
500+	2.18 EUR
1000+	1.72 EUR

Mindestbestellmenge: 7

SQJA02EP-T1_GE3

MOSFET 60V Vds 60A Id AEC-Q101 Qualified

auf Bestellung 4756 Stücke:

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16+	3.25 EUR
20+	2.68 EUR
100+	2.12 EUR
500+	1.81 EUR
1000+	1.49 EUR
3000+	1.44 EUR
6000+	1.33 EUR

Mindestbestellmenge: 16

SQJA02EP-T1_GE3

Description: VISHAY - SQJA02EP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 60 A, 0.004 ohm, PowerPAK SO, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60
Dauer-Drainstrom Id: 60
Rds(on)-Messspannung Vgs: 10
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 68
Bauform - Transistor: PowerPAK SO
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: TrenchFET
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.004
Betriebstemperatur, max.: 175
Schwellenspannung Vgs: 3
SVHC: No SVHC (19-Jan-2021)

auf Bestellung 2035 Stücke:

Lieferzeit 14-21 Tag (e)

SQJA02EP-T1_GE3

Trans MOSFET N-CH 60V 75A Automotive 5-Pin(4+Tab) PowerPAK SO

auf Bestellung 9000 Stücke:

Lieferzeit 14-21 Tag (e)

SQJA02EP-T1_GE3

Description: MOSFET N-CH 60V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V

Produkt ist nicht verfügbar

SQJA04EP-T1_BE3

Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.12 EUR

Mindestbestellmenge: 3000

SQJA04EP-T1_BE3

Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 3000 Stücke:

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10+	2.7 EUR
12+	2.23 EUR
100+	1.73 EUR
500+	1.47 EUR
1000+	1.19 EUR

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SQJA04EP-T1_GE3

MOSFET 60V Vds PowerPAK AEC-Q101 Qualified

auf Bestellung 3000 Stücke:

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15+	3.54 EUR
17+	3.2 EUR
100+	2.48 EUR
500+	2.05 EUR

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SQJA04EP-T1_GE3

Description: MOSFET N-CH 60V 75A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.24 EUR

Mindestbestellmenge: 3000

SQJA04EP-T1_GE3

Automotive N-Channel 60 V D-S 175 Degreec Mosfet

Produkt ist nicht verfügbar

SQJA04EP-T1_GE3

Description: MOSFET N-CH 60V 75A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 5984 Stücke:

Lieferzeit 21-28 Tag (e)

9+	2.99 EUR
11+	2.45 EUR
100+	1.9 EUR
500+	1.61 EUR
1000+	1.31 EUR

Mindestbestellmenge: 9

SQJA06EP-T1_GE3

Description: MOSFET N-CH 60V 57A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V

auf Bestellung 2995 Stücke:

Lieferzeit 21-28 Tag (e)

9+	2.94 EUR
10+	2.63 EUR
100+	2.05 EUR
500+	1.7 EUR
1000+	1.34 EUR

Mindestbestellmenge: 9

SQJA06EP-T1_GE3

Description: MOSFET N-CH 60V 57A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V

Produkt ist nicht verfügbar

SQJA06EP-T1_GE3

MOSFET 60V Vds PowerPAK AEC-Q101 Qualified

auf Bestellung 30000 Stücke:

Lieferzeit 14-28 Tag (e)

SQJA16EP-T1_GE3

Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 278A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5485 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 3305 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.64 EUR
10+	3.03 EUR
100+	2.41 EUR
500+	2.04 EUR
1000+	1.73 EUR

Mindestbestellmenge: 8

SQJA16EP-T1_GE3

MOSFET N-CHANNEL 60-V (D-S) 175C MOSFET

auf Bestellung 32118 Stücke:

Lieferzeit 14-28 Tag (e)

15+	3.67 EUR
17+	3.07 EUR
100+	2.44 EUR
250+	2.33 EUR
500+	2.04 EUR
1000+	1.74 EUR
3000+	1.66 EUR

Mindestbestellmenge: 15

SQJA16EP-T1_GE3

Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 278A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5485 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

SQJA16EP-T1_GE3

SQJA16EP-T1-GE3 SMD N channel transistors

Produkt ist nicht verfügbar

SQJA20EP-T1_GE3

Automotive N-Channel 200 V MOSFET

Produkt ist nicht verfügbar

SQJA20EP-T1_GE3

Description: MOSFET N-CH 200V 22.5A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V

auf Bestellung 650 Stücke:

Lieferzeit 21-28 Tag (e)

7+	3.93 EUR
10+	3.5 EUR
100+	2.73 EUR
500+	2.26 EUR

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SQJA20EP-T1_GE3

Description: MOSFET N-CH 200V 22.5A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V

Produkt ist nicht verfügbar

SQJA20EP-T1_GE3

MOSFET 200V Vds -/+20V Vgs AEC-Q101 Qualified

auf Bestellung 3644 Stücke:

Lieferzeit 14-28 Tag (e)

SQJA26EP-T1_GE3

Description: VISHAY - SQJA26EP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 410 A, 0.00066 ohm, PowerPAK SO, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30
Dauer-Drainstrom Id: 410
Rds(on)-Messspannung Vgs: 10
MSL: -
Verlustleistung Pd: 500
Bauform - Transistor: PowerPAK SO
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: TrenchFET Gen IV
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 660
Betriebstemperatur, max.: 175
Schwellenspannung Vgs: 2
SVHC: No SVHC (08-Jul-2021)

auf Bestellung 6 Stücke:

Lieferzeit 14-21 Tag (e)

SQJA26EP-T1_GE3

MOSFET N-CHANNEL 30-V (D-S) 175C MOSFET

auf Bestellung 2250 Stücke:

Lieferzeit 14-28 Tag (e)

13+	4.21 EUR
15+	3.51 EUR
100+	2.78 EUR
500+	2.35 EUR
1000+	1.99 EUR
3000+	1.98 EUR

Mindestbestellmenge: 13

SQJA34EP-T1_GE3

Description: MOSFET N-CH 40V 75A PPAK SO-8

Produkt ist nicht verfügbar

SQJA34EP-T1_GE3

MOSFET Dual N-Ch 40V AEC-Q101 Qualified

auf Bestellung 6000 Stücke:

Lieferzeit 451-465 Tag (e)

18+	2.99 EUR
20+	2.7 EUR
100+	2.1 EUR
500+	1.73 EUR

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SQJA34EP-T1_GE3

Description: VISHAY - SQJA34EP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 75 A, 0.0035 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 75A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 68W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0035ohm
SVHC: No SVHC (10-Jun-2022)

auf Bestellung 2891 Stücke:

Lieferzeit 14-21 Tag (e)

SQJA34EP-T1_GE3

Description: MOSFET N-CH 40V 75A PPAK SO-8

auf Bestellung 970 Stücke:

Lieferzeit 21-28 Tag (e)

SQJA34EP-T1_GE3

Trans MOSFET N-CH 40V 75A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJA34EP-T1_GE3

auf Bestellung 2891 Stücke:

Lieferzeit 14-21 Tag (e)

SQJA36EP-T1_GE3

Description: MOSFET N-CH 40V 350A PPAK SO-8

Produkt ist nicht verfügbar

SQJA36EP-T1_GE3

Trans MOSFET N-CH 40V 350A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJA36EP-T1_GE3

MOSFET 40-V(D-S)175C MOSFET N-CHANNEL PowerPAK

Produkt ist nicht verfügbar

SQJA36EP-T1_GE3

Description: MOSFET N-CH 40V 350A PPAK SO-8

Produkt ist nicht verfügbar

SQJA37EP-T1_BE3

Description: P-CHANNEL 30-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

SQJA37EP-T1_BE3

Description: P-CHANNEL 30-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

SQJA37EP-T1_GE3

Description: MOSFET P-CH 30V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 2829 Stücke:

Lieferzeit 21-28 Tag (e)

13+	2.11 EUR
16+	1.73 EUR
100+	1.35 EUR
500+	1.14 EUR
1000+	0.93 EUR

Mindestbestellmenge: 13

SQJA37EP-T1_GE3

MOSFET -30V Vds -/+20V Vgs PowerPAK SO-8L

auf Bestellung 20970 Stücke:

Lieferzeit 14-28 Tag (e)

25+	2.08 EUR
31+	1.7 EUR
100+	1.32 EUR
500+	1.23 EUR
1000+	1.05 EUR
3000+	0.99 EUR
6000+	0.84 EUR

Mindestbestellmenge: 25

SQJA37EP-T1_GE3

Description: MOSFET P-CH 30V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

SQJA37EP-T1_GE3

Trans MOSFET P-CH 30V 30A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJA38EP-T1_GE3

Description: MOSFET N-CH 40V 60A PPAK SO-8

Produkt ist nicht verfügbar

SQJA38EP-T1_GE3

Description: MOSFET N-CH 40V 60A PPAK SO-8

Produkt ist nicht verfügbar

SQJA38EP-T1_GE3

MOSFET N-CHANNEL 40-V (D-S) 175C MOSFET

auf Bestellung 2860 Stücke:

Lieferzeit 14-28 Tag (e)

SQJA42EP-T1_GE3

MOSFET Nch 40V Vds 20V Vgs PowerPAK SO-8L

auf Bestellung 2907 Stücke:

Lieferzeit 14-28 Tag (e)

SQJA42EP-T1_GE3

Description: MOSFET N-CH 40V 20A PPAK SO-8

auf Bestellung 2747 Stücke:

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SQJA42EP-T1_GE3

Description: MOSFET N-CH 40V 20A PPAK SO-8

Produkt ist nicht verfügbar

SQJA46EP-T1_GE3

MOSFET N-Ch 40V Vds AEC-Q101 Qualified

auf Bestellung 3000 Stücke:

Lieferzeit 14-28 Tag (e)

SQJA60EP-T1_BE3

Description: MOSFET N-CH 60V 30A POWERPAKSO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

SQJA60EP-T1_BE3

N Channel MOSFET Automotive AEC-Q101

Produkt ist nicht verfügbar

SQJA60EP-T1_BE3

Trans MOSFET N-CH 60V 30A T/R Automotive AEC-Q101

Produkt ist nicht verfügbar

SQJA60EP-T1_BE3

MOSFET N-CHANNEL 60-V (D-S) 175C MOSFET

auf Bestellung 33429 Stücke:

Lieferzeit 14-28 Tag (e)

21+	2.56 EUR
25+	2.11 EUR
100+	1.64 EUR
500+	1.39 EUR
1000+	1.13 EUR

Mindestbestellmenge: 21

SQJA60EP-T1_BE3

Description: MOSFET N-CH 60V 30A POWERPAKSO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 2569 Stücke:

Lieferzeit 21-28 Tag (e)

11+	2.55 EUR
13+	2.09 EUR
100+	1.63 EUR
500+	1.38 EUR
1000+	1.12 EUR

Mindestbestellmenge: 11

SQJA60EP-T1_GE3

Trans MOSFET N-CH 60V 30A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJA60EP-T1_GE3

Trans MOSFET N-CH 60V 30A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	1.11 EUR

Mindestbestellmenge: 3000

SQJA60EP-T1_GE3

MOSFET 60V Vds PowerPAK AEC-Q101 Qualified

auf Bestellung 23628 Stücke:

Lieferzeit 14-28 Tag (e)

21+	2.54 EUR
25+	2.1 EUR
100+	1.64 EUR
500+	1.39 EUR
1000+	1.13 EUR
3000+	1.06 EUR
6000+	1.01 EUR

Mindestbestellmenge: 21

SQJA60EP-T1_GE3

Description: MOSFET N-CH 60V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

SQJA60EP-T1_GE3

Description: MOSFET N-CH 60V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 2899 Stücke:

Lieferzeit 21-28 Tag (e)

11+	2.55 EUR
13+	2.09 EUR
100+	1.63 EUR
500+	1.38 EUR
1000+	1.12 EUR

Mindestbestellmenge: 11

SQJA61EP-T1_GE3

MOSFET Automotive P-Channel 60 V (D-S) 175C MOSFET PowerPAK SO-8L, 12.1 mohm a. 10V, 22.5 mohm a. 4.5V

auf Bestellung 5798 Stücke:

Lieferzeit 14-28 Tag (e)

16+	3.3 EUR
20+	2.7 EUR
100+	2.12 EUR
500+	1.79 EUR
1000+	1.46 EUR
3000+	1.38 EUR
6000+	1.31 EUR

Mindestbestellmenge: 16

SQJA62EP-T1_GE3

Description: MOSFET N-CH 60V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 8395 Stücke:

Lieferzeit 21-28 Tag (e)

9+	3.07 EUR
11+	2.51 EUR
100+	1.95 EUR
500+	1.65 EUR
1000+	1.35 EUR

Mindestbestellmenge: 9

SQJA62EP-T1_GE3

MOSFET N-Channel 60V PowerPAK SO-8L

auf Bestellung 35687 Stücke:

Lieferzeit 14-28 Tag (e)

17+	3.07 EUR
21+	2.49 EUR
100+	1.92 EUR
500+	1.53 EUR
1000+	1.32 EUR
3000+	1.27 EUR
6000+	1.21 EUR

Mindestbestellmenge: 17

SQJA62EP-T1_GE3

Description: MOSFET N-CH 60V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.27 EUR

Mindestbestellmenge: 3000

SQJA62EP-T1_GE3

Trans MOSFET N-CH 60V 75A Automotive 5-Pin(4+Tab) PowerPAK SO

Produkt ist nicht verfügbar

SQJA64EP-T1-BE3

MOSFET N-CH 60-V 175C MSFT

Produkt ist nicht verfügbar

SQJA64EP-T1-BE3 M

MOSFET N-CH 60-V 175C MSFT

Produkt ist nicht verfügbar

SQJA64EP-T1-GE3 M

MOSFET N-CHANNEL 60-V (D-S) 175C MOSF

Produkt ist nicht verfügbar

SQJA64EP-T1_BE3

Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 17989 Stücke:

Lieferzeit 21-28 Tag (e)

16+	1.69 EUR
18+	1.46 EUR
100+	1.01 EUR
500+	0.84 EUR
1000+	0.72 EUR

Mindestbestellmenge: 16

SQJA64EP-T1_BE3

Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 15000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.64 EUR
6000+	0.6 EUR
9000+	0.56 EUR

Mindestbestellmenge: 3000

SQJA64EP-T1_GE3

SQJA64EP-T1_GE3

Produkt ist nicht verfügbar

SQJA64EP-T1_GE3

Description: MOSFET N-CH 60V 15A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 8945 Stücke:

Lieferzeit 21-28 Tag (e)

15+	1.85 EUR
17+	1.6 EUR
100+	1.11 EUR
500+	0.93 EUR
1000+	0.79 EUR

Mindestbestellmenge: 15

SQJA64EP-T1_GE3

Automotive AEC-Q101 N-Channel 60 V, 175 degree C MOSFET

Produkt ist nicht verfügbar

SQJA64EP-T1_GE3

MOSFET N-Ch 60V Vds AEC-Q101 Qualified

auf Bestellung 219193 Stücke:

Lieferzeit 14-28 Tag (e)

28+	1.86 EUR
32+	1.64 EUR
100+	1.12 EUR
500+	0.93 EUR
1000+	0.8 EUR
3000+	0.67 EUR
6000+	0.65 EUR

Mindestbestellmenge: 28

SQJA64EP-T1_GE3

Description: MOSFET N-CH 60V 15A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.7 EUR
6000+	0.67 EUR

Mindestbestellmenge: 3000

SQJA66EP-T1_GE3

Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)

Produkt ist nicht verfügbar

SQJA66EP-T1_GE3

MOSFET N-CHANNEL 60-V (D-S) 175C MOSFET

auf Bestellung 4731 Stücke:

Lieferzeit 14-28 Tag (e)

16+	3.33 EUR
20+	2.73 EUR
100+	2.13 EUR
500+	1.8 EUR
1000+	1.47 EUR
3000+	1.41 EUR
6000+	1.32 EUR

Mindestbestellmenge: 16

SQJA66EP-T1_GE3

Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)

Produkt ist nicht verfügbar

SQJA68EP-T1_BE3

Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V

Produkt ist nicht verfügbar

SQJA68EP-T1_BE3

Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V

auf Bestellung 2320 Stücke:

Lieferzeit 21-28 Tag (e)

14+	1.95 EUR
16+	1.72 EUR
100+	1.32 EUR
500+	1.05 EUR
1000+	0.84 EUR

Mindestbestellmenge: 14

SQJA68EP-T1_GE3

Description: VISHAY - SQJA68EP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 14 A, 0.0765 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 14A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 45W
Anzahl der Pins: 8Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0765ohm

auf Bestellung 5296 Stücke:

Lieferzeit 14-21 Tag (e)

SQJA68EP-T1_GE3

Description: MOSFET N-CH 100V 14A PPAK SO-8L

auf Bestellung 3912 Stücke:

Lieferzeit 21-28 Tag (e)

SQJA68EP-T1_GE3

Description: MOSFET N-CH 100V 14A PPAK SO-8L

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

SQJA68EP-T1_GE3

auf Bestellung 5296 Stücke:

Lieferzeit 14-21 Tag (e)

SQJA68EP-T1_GE3

MOSFET 100V Vds +/-20V Vgs AEC-Q101 Qualified

auf Bestellung 35449 Stücke:

Lieferzeit 14-28 Tag (e)

30+	1.76 EUR
35+	1.5 EUR
100+	1.12 EUR
500+	0.92 EUR
1000+	0.76 EUR
3000+	0.7 EUR
6000+	0.69 EUR

Mindestbestellmenge: 30

SQJA70EP-T1_GE3

Description: VISHAY - SQJA70EP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 14.7 A, 0.078 ohm, PowerPAK SO, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100
Dauer-Drainstrom Id: 14.7
Rds(on)-Messspannung Vgs: 10
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 27
Bauform - Transistor: PowerPAK SO
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: TrenchFET
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.078
Betriebstemperatur, max.: 175
Schwellenspannung Vgs: 3
SVHC: No SVHC (19-Jan-2021)

Produkt ist nicht verfügbar

SQJA70EP-T1_GE3

MOSFET 100V Vds +/-20V Vgs AEC-Q101 Qualified

auf Bestellung 51129 Stücke:

Lieferzeit 14-28 Tag (e)

SQJA72EP-T1
Produktcode: 147923

Transistoren > MOSFET N-CH

Produkt ist nicht verfügbar

SQJA72EP-T1_GE3

MOSFET 100V Vds -/+20V Vgs PowerPAK SO-8L

auf Bestellung 9802 Stücke:

Lieferzeit 14-28 Tag (e)

SQJA72EP-T1_GE3

Description: MOSFET N-CH 100V 37A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 2811 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.59 EUR
10+	2.93 EUR
100+	2.28 EUR
500+	1.93 EUR
1000+	1.57 EUR

Mindestbestellmenge: 8

SQJA72EP-T1_GE3

Description: MOSFET N-CH 100V 37A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

SQJA76EP-T1_BE3

Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V

auf Bestellung 2994 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.54 EUR
10+	3.17 EUR
100+	2.47 EUR
500+	2.04 EUR
1000+	1.61 EUR

Mindestbestellmenge: 8

SQJA76EP-T1_BE3

Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V

auf Bestellung 2994 Stücke:

Lieferzeit 21-28 Tag (e)

SQJA76EP-T1_GE3

Description: MOSFET N-CH 40V 75A PPAK SO-8

Produkt ist nicht verfügbar

SQJA76EP-T1_GE3

MOSFET 40V Vds; +/-20V Vgs PowerPAK SO-8L

auf Bestellung 2383 Stücke:

Lieferzeit 14-28 Tag (e)

SQJA76EP-T1_GE3

Description: VISHAY - SQJA76EP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 75 A, 0.002 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40
rohsCompliant: YES
Dauer-Drainstrom Id: 75
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 68
Gate-Source-Schwellenspannung, max.: 3
euEccn: NLR
Verlustleistung: 68
Bauform - Transistor: PowerPAK SO
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.002
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.002
SVHC: No SVHC (10-Jun-2022)

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

SQJA76EP-T1_GE3

Trans MOSFET N-CH 40V 75A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJA78EP-T1_GE3

Description: MOSFET N-CH 80V 72A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 2970 Stücke:

Lieferzeit 21-28 Tag (e)

7+	3.93 EUR
10+	3.28 EUR
100+	2.61 EUR
500+	2.21 EUR
1000+	1.87 EUR

Mindestbestellmenge: 7

SQJA78EP-T1_GE3

MOSFET N-CHANNEL 80-V (D-S) 175C MOSFET

auf Bestellung 2985 Stücke:

Lieferzeit 14-28 Tag (e)

13+	4.21 EUR
14+	3.77 EUR
100+	3.04 EUR
500+	2.49 EUR
1000+	2.06 EUR
3000+	1.83 EUR
6000+	1.78 EUR

Mindestbestellmenge: 13

SQJA78EP-T1_GE3

Description: VISHAY - SQJA78EP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 80 V, 72 A, 0.00432 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80
Dauer-Drainstrom Id: 72
hazardous: false
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 68
Gate-Source-Schwellenspannung, max.: 2.8
euEccn: NLR
Verlustleistung: 68
Bauform - Transistor: PowerPAK SO
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: TrenchFET
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.00432
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.00432
SVHC: No SVHC (10-Jun-2022)

Produkt ist nicht verfügbar

SQJA78EP-T1_GE3

Trans MOSFET N-CH 80V 72A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

Produkt ist nicht verfügbar

SQJA78EP-T1_GE3

Description: MOSFET N-CH 80V 72A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

SQJA78EP-T1_GE3

Produkt ist nicht verfügbar

SQJA80EP-T1-BE3

MOSFET N-CHANNEL 80-V (D-S) 175C

Produkt ist nicht verfügbar

SQJA80EP-T1_BE3

Description: N-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V

Produkt ist nicht verfügbar

SQJA80EP-T1_BE3

MOSFET N-CHANNEL 80-V (D-S) 175C MOSFET

Produkt ist nicht verfügbar

SQJA80EP-T1_BE3

Description: N-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V

Produkt ist nicht verfügbar

SQJA80EP-T1_GE3

Trans MOSFET N-CH 80V 60A Automotive 5-Pin(4+Tab) PowerPAK SO

Produkt ist nicht verfügbar

SQJA80EP-T1_GE3

MOSFET N-Channel 80V PowerPAK SO-8L

auf Bestellung 40370 Stücke:

Lieferzeit 14-28 Tag (e)

18+	2.91 EUR
22+	2.39 EUR
100+	1.9 EUR
500+	1.63 EUR
1000+	1.29 EUR
3000+	1.27 EUR
6000+	1.2 EUR

Mindestbestellmenge: 18

SQJA80EP-T1_GE3

Description: VISHAY - SQJA80EP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 80 V, 60 A, 0.0058 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 60A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 68W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0058ohm

auf Bestellung 2997 Stücke:

Lieferzeit 14-21 Tag (e)

SQJA80EP-T1_GE3

Trans MOSFET N-CH 80V 60A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO

auf Bestellung 2895 Stücke:

Lieferzeit 14-21 Tag (e)

175+	0.89 EUR

Mindestbestellmenge: 175

SQJA80EP-T1_GE3

Description: MOSFET N-CH 80V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 2728 Stücke:

Lieferzeit 21-28 Tag (e)

9+	3.07 EUR
11+	2.51 EUR
100+	1.95 EUR
500+	1.65 EUR
1000+	1.35 EUR

Mindestbestellmenge: 9

SQJA80EP-T1_GE3

auf Bestellung 2997 Stücke:

Lieferzeit 14-21 Tag (e)

SQJA80EP-T1_GE3