Produkte > DMP
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||
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| DMP-0.5 X 0.5 X 0.25 | Fotofab LLC | Description: SHIELD RF REMOVBL .5 X .5 X .25" | auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DMP-0.5 X 1.0 X 0.25 | Fotofab LLC | Description: SHIELD RF REMOVBL .5 X 1 X .25" | auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DMP-1.0 X 1.0 X 0.25 | Fotofab LLC | Description: SHIELD RF REMOVBL 1 X 1 X .25" | auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DMP-1.0 X 1.5 X 0.25 | Fotofab LLC | Description: SHIELD RF REMOVBL 1 X 1.5 X .25" | auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DMP-CLD-FULL-PDPM | Advantech | Development Software | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP-DDV1890U11 | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| DMP-VC2074S6 | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| DMP-VCX1652ST00D1652 | ACCEPTED | auf Bestellung 1100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| DMP-VCX1668UT20 | DELTA | 2004 | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DMP-VCX980S10 | ACCEPTEO | auf Bestellung 250 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| DMP1-120125 | Acme Electric/Amveco/Actown | Description: AC/DC CONVERTER 12V 15W | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1-12025 | Acme Electric | Description: AC/DC DIN RAIL SUPPLY 12V 36W Packaging: Box Power (Watts): 36W Features: Adjustable Output, Universal Input Size / Dimension: 3.54" L x 0.90" W x 4.02" H (89.9mm x 22.9mm x 102.1mm) Operating Temperature: -10°C ~ 50°C (With Derating) Applications: Industrial, ITE (Commercial) Input Type: AC Approval Agency: CE, cULus Efficiency: 84% Current - Output (Max): 3A Voltage - Output 1: 12V Part Status: Active Number of Outputs: 1 Standard Number: 60950-1; UL 508 AC Voltage - Input: 90 ~ 264 VAC | auf Bestellung 1194 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1-1204 | Acme Electric/Amveco/Actown | Description: AC/DC CONVERTER 12V 50W | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1-1502 | Galco Industrial Electronics | Description: POWER SUPPLY, 15VDC, 2A, 1PH, 30 | auf Bestellung 494 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DMP1-24006 | Acme Electric | Description: AC/DC DIN RAIL SUPPLY 24V 16W Power (Watts): 16W Features: Adjustable Output, Universal Input Packaging: Box Size / Dimension: 3.54" L x 0.90" W x 4.02" H (89.9mm x 22.9mm x 102.1mm) Operating Temperature: -10°C ~ 50°C (With Derating) Applications: Industrial, ITE (Commercial) Input Type: AC Approval Agency: CE, cULus Efficiency: 81% Current - Output (Max): 680mA Voltage - Output 1: 24V Part Status: Active Number of Outputs: 1 Standard Number: 60950-1; UL 508 AC Voltage - Input: 90 ~ 264 VAC | auf Bestellung 678 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1-24006-ACME | Acme Electric | Description: Power Supply, 24VDC, 0.625A, 1Ph Packaging: Retail Package Part Status: Active | auf Bestellung 677 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1-240125 | Acme Electric/Amveco/Actown | Description: AC/DC CONVERTER 24V 30W | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1-2402 | Acme Electric/Amveco/Actown | Description: AC/DC CONVERTER 24V 50W | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1-4801 | Acme Electric/Amveco/Actown | Description: AC/DC CONVERTER 48V 50W | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1-4801-ACME | Galco Industrial Electronics | Description: Power Supply, 48VDC, 1A, 1Ph, 50 Packaging: Retail Package Part Status: Active | auf Bestellung 24 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1-504 | Acme Electric/Amveco/Actown | Description: AC/DC CONVERTER 5V 20W | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1005UFDF-13 | Diodes Inc | Trans MOSFET P-CH 12V 12.8A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1005UFDF-13 | Diodes Incorporated | MOSFET MOSFETBVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1005UFDF-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W Polarisation: unipolar Mounting: SMD Drain-source voltage: -12V Drain current: -10.3A On-state resistance: 18.5mΩ Type of transistor: P-MOSFET Power dissipation: 2.1W Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -70A Case: U-DFN2020-6 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1005UFDF-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W Polarisation: unipolar Mounting: SMD Drain-source voltage: -12V Drain current: -10.3A On-state resistance: 18.5mΩ Type of transistor: P-MOSFET Power dissipation: 2.1W Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -70A Case: U-DFN2020-6 Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1005UFDF-13 | Diodes Incorporated | Description: MOSFET P-CH 12V 26A 6UDFN | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1005UFDF-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 26A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 5A, 4.5V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2475 pF @ 6 V | auf Bestellung 396112 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1005UFDF-7 | Diodes Incorporated | MOSFET MOSFETBVDSS: 8V-24V | auf Bestellung 64312 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP1005UFDF-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W Polarisation: unipolar Mounting: SMD Drain-source voltage: -12V Drain current: -10.3A On-state resistance: 18.5mΩ Type of transistor: P-MOSFET Power dissipation: 2.1W Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -70A Case: U-DFN2020-6 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1005UFDF-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W Polarisation: unipolar Mounting: SMD Drain-source voltage: -12V Drain current: -10.3A On-state resistance: 18.5mΩ Type of transistor: P-MOSFET Power dissipation: 2.1W Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -70A Case: U-DFN2020-6 Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1005UFDF-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 26A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 5A, 4.5V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2475 pF @ 6 V | auf Bestellung 393000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1005UFDF-7 | Diodes Inc | Trans MOSFET P-CH 12V 12.8A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1007UCB9-7 | Diodes Incorporated | Description: MOSFET P-CH 8V 13.2A U-WLB1515-9 Packaging: Cut Tape (CT) Package / Case: 9-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 2A, 4.5V Power Dissipation (Max): 840mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-WLB1515-9 (Type C) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 4 V | auf Bestellung 166716 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1007UCB9-7 | Diodes Incorporated | Description: MOSFET P-CH 8V 13.2A U-WLB1515-9 Packaging: Tape & Reel (TR) Package / Case: 9-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 2A, 4.5V Power Dissipation (Max): 840mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-WLB1515-9 (Type C) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 4 V | auf Bestellung 165000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1007UCB9-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1007UCB9-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -7.8A; Idm: -80A; 1.53W Case: U-WLB1515-9 Mounting: SMD Kind of package: reel; tape Drain current: -7.8A On-state resistance: 9.1mΩ Type of transistor: P-MOSFET Power dissipation: 1.53W Polarisation: unipolar Gate charge: 8.2nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -80A Drain-source voltage: -8V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1007UCB9-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -7.8A; Idm: -80A; 1.53W Case: U-WLB1515-9 Mounting: SMD Kind of package: reel; tape Drain current: -7.8A On-state resistance: 9.1mΩ Type of transistor: P-MOSFET Power dissipation: 1.53W Polarisation: unipolar Gate charge: 8.2nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -80A Drain-source voltage: -8V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1008UCA9-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1008UCA9-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V-24V X2-DSN1515- | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1008UCB9-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V U-WLB1515-9 Packaging: Tape & Reel (TR) Package / Case: 9-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 2A, 4.5V Power Dissipation (Max): 840mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-WLB1515-9 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 4 V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1008UCB9-7 | DIODES INC. | Description: DIODES INC. - DMP1008UCB9-7 - Leistungs-MOSFET, p-Kanal, 8 V, 9.8 A, 0.0047 ohm, U-WLB1515, Oberflächenmontage tariffCode: 85412100 Drain-Source-Spannung Vds: 8V rohsCompliant: YES Dauer-Drainstrom Id: 9.8A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 600mV euEccn: NLR Verlustleistung: 840mW Anzahl der Pins: 9Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0047ohm | auf Bestellung 2616 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP1008UCB9-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V~24V U-WLB1515-9 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1008UCB9-7 | DIODES INC. | Description: DIODES INC. - DMP1008UCB9-7 - Leistungs-MOSFET, p-Kanal, 8 V, 9.8 A, 0.0047 ohm, U-WLB1515, Oberflächenmontage tariffCode: 85412100 Drain-Source-Spannung Vds: 8V rohsCompliant: YES Dauer-Drainstrom Id: 9.8A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 600mV euEccn: NLR Verlustleistung: 840mW Anzahl der Pins: 9Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0047ohm | auf Bestellung 2616 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP1009UFDF-13 | Diodes Incorporated | Description: MOSFET P-CH 12V 15A UDFN2020-6 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1009UFDF-13 | Diodes Inc | Trans MOSFET P-CH 12V 11A 6-Pin UDFN EP T/R | auf Bestellung 350000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP1009UFDF-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W Polarisation: unipolar Mounting: SMD Drain-source voltage: -12V Drain current: -12A On-state resistance: 30mΩ Type of transistor: P-MOSFET Power dissipation: 2W Kind of package: reel; tape Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -70A Case: U-DFN2020-6 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1009UFDF-13 | Diodes Incorporated | MOSFET MOSFETBVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1009UFDF-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W Polarisation: unipolar Mounting: SMD Drain-source voltage: -12V Drain current: -12A On-state resistance: 30mΩ Type of transistor: P-MOSFET Power dissipation: 2W Kind of package: reel; tape Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -70A Case: U-DFN2020-6 Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1009UFDF-13 | Diodes Zetex | Trans MOSFET P-CH 12V 11A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1009UFDF-7 | Diodes Inc | Trans MOSFET P-CH 12V 11A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1009UFDF-7 | Diodes Zetex | Trans MOSFET P-CH 12V 11A 6-Pin UDFN EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP1009UFDF-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W Polarisation: unipolar Mounting: SMD Drain-source voltage: -12V Drain current: -12A On-state resistance: 30mΩ Type of transistor: P-MOSFET Power dissipation: 2W Kind of package: reel; tape Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -70A Case: U-DFN2020-6 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1009UFDF-7 | Diodes Incorporated | MOSFET MOSFETBVDSS: 8V-24V | auf Bestellung 31847 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP1009UFDF-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W Polarisation: unipolar Mounting: SMD Drain-source voltage: -12V Drain current: -12A On-state resistance: 30mΩ Type of transistor: P-MOSFET Power dissipation: 2W Kind of package: reel; tape Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -70A Case: U-DFN2020-6 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1009UFDF-7 | DIODES INC. | Description: DIODES INC. - DMP1009UFDF-7 - Leistungs-MOSFET, p-Kanal, 12 V, 11 A, 0.0083 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 MSL: MSL 1 - unbegrenzt productTraceability: Yes-Date/Lot Code rohsCompliant: YES Verlustleistung: 2W Kanaltyp: p-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.0083ohm rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2940 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP1009UFDF-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 15A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V | auf Bestellung 156255 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1009UFDF-7 | Diodes Zetex | Trans MOSFET P-CH 12V 11A 6-Pin UDFN EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP1009UFDF-7 | Diodes Zetex | Trans MOSFET P-CH 12V 11A 6-Pin UDFN EP T/R | auf Bestellung 1355 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP1009UFDF-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 15A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V | auf Bestellung 156000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1009UFDF-7 | Diodes Zetex | Trans MOSFET P-CH 12V 11A 6-Pin UDFN EP T/R | auf Bestellung 1355 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP1009UFDF-7 | DIODES INC. | Description: DIODES INC. - DMP1009UFDF-7 - Leistungs-MOSFET, p-Kanal, 12 V, 11 A, 0.0083 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 11A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 2W Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 2W Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.0083ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0083ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2940 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP1009UFDF-7 | Diodes Zetex | Trans MOSFET P-CH 12V 11A 6-Pin UDFN EP T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP1009UFDFQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1009UFDFQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V-24V U-DFN2020-6 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1009UFDFQ-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 11A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 5288 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1009UFDFQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K | auf Bestellung 19685 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP1009UFDFQ-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 11A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1009UFDFQ-7 | Diodes Inc | Trans MOSFET P-CH 12V 11A Automotive 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1009UFDFQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W Polarisation: unipolar Mounting: SMD Drain-source voltage: -12V Drain current: -12A On-state resistance: 30mΩ Type of transistor: P-MOSFET Power dissipation: 2W Kind of package: reel; tape Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -70A Case: U-DFN2020-6 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1009UFDFQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W Polarisation: unipolar Mounting: SMD Drain-source voltage: -12V Drain current: -12A On-state resistance: 30mΩ Type of transistor: P-MOSFET Power dissipation: 2W Kind of package: reel; tape Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -70A Case: U-DFN2020-6 Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1010UCA4-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X2-DSN1212-4 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1011LFV-13 | Diodes Zetex | Trans MOSFET P-CH 12V 19A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1011LFV-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -10A; Idm: -70A; 2.16W Case: PowerDI3333-8 Mounting: SMD Kind of package: reel; tape Drain current: -10A On-state resistance: 18.6mΩ Type of transistor: P-MOSFET Power dissipation: 2.16W Polarisation: unipolar Gate charge: 9.5nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -70A Drain-source voltage: -12V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1011LFV-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -10A; Idm: -70A; 2.16W Case: PowerDI3333-8 Mounting: SMD Kind of package: reel; tape Drain current: -10A On-state resistance: 18.6mΩ Type of transistor: P-MOSFET Power dissipation: 2.16W Polarisation: unipolar Gate charge: 9.5nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -70A Drain-source voltage: -12V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1011LFV-13 | Diodes Incorporated | MOSFET MOSFETBVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1011LFV-13 | Diodes Incorporated | Description: MOSFET P-CH 12V 19A POWERDI3333 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1011LFV-7 | Diodes Incorporated | MOSFET MOSFETBVDSS: 8V-24V | auf Bestellung 1000 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP1011LFV-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 19A POWERDI3333 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1011LFV-7 | Diodes Zetex | Trans MOSFET P-CH 12V 19A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1011LFV-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -10A; Idm: -70A; 2.16W Case: PowerDI3333-8 Mounting: SMD Kind of package: reel; tape Drain current: -10A On-state resistance: 18.6mΩ Type of transistor: P-MOSFET Power dissipation: 2.16W Polarisation: unipolar Gate charge: 9.5nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -70A Drain-source voltage: -12V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1011LFV-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -10A; Idm: -70A; 2.16W Case: PowerDI3333-8 Mounting: SMD Kind of package: reel; tape Drain current: -10A On-state resistance: 18.6mΩ Type of transistor: P-MOSFET Power dissipation: 2.16W Polarisation: unipolar Gate charge: 9.5nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -70A Drain-source voltage: -12V Anzahl je Verpackung: 2000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1011LFVQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 12A, 4.5V Power Dissipation (Max): 1.05W Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 913 pF @ 6 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1011LFVQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 12A, 4.5V Power Dissipation (Max): 1.05W Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 913 pF @ 6 V Qualification: AEC-Q101 | auf Bestellung 60000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1011UCB9-7 | DIODES INC. | Description: DIODES INC. - DMP1011UCB9-7 - Leistungs-MOSFET, p-Kanal, 8 V, 10 A, 0.0082 ohm, U-WLB1515, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 8V rohsCompliant: YES Dauer-Drainstrom Id: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Verlustleistung Pd: 890mW Gate-Source-Schwellenspannung, max.: 800mV euEccn: NLR Verlustleistung: 890mW Bauform - Transistor: U-WLB1515 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 9Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.0082ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0082ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP1011UCB9-7 | Diodes Zetex | Trans MOSFET P-CH 8V 10A 9-Pin UWLP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1011UCB9-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -6A; Idm: -50A; 1.57W Case: U-WLB1515-9 Mounting: SMD Kind of package: reel; tape Drain current: -6A On-state resistance: 14mΩ Type of transistor: P-MOSFET Power dissipation: 1.57W Polarisation: unipolar Gate charge: 10.5nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -50A Drain-source voltage: -8V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1011UCB9-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -6A; Idm: -50A; 1.57W Case: U-WLB1515-9 Mounting: SMD Kind of package: reel; tape Drain current: -6A On-state resistance: 14mΩ Type of transistor: P-MOSFET Power dissipation: 1.57W Polarisation: unipolar Gate charge: 10.5nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -50A Drain-source voltage: -8V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1011UCB9-7 | Diodes Incorporated | Description: MOSFET P-CH 8V 10A U-WLB1515-9 Packaging: Cut Tape (CT) Package / Case: 9-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V Power Dissipation (Max): 890mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-WLB1515-9 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V | auf Bestellung 15039 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1011UCB9-7 | Diodes Incorporated | MOSFET P-Ch Enh Mode FET | auf Bestellung 5880 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP1011UCB9-7 | DIODES INC. | Description: DIODES INC. - DMP1011UCB9-7 - Leistungs-MOSFET, p-Kanal, 8 V, 10 A, 0.0082 ohm, U-WLB1515, Oberflächenmontage tariffCode: 85411000 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Verlustleistung: 890mW Kanaltyp: p-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.0082ohm rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 SVHC: No SVHC (17-Jan-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP1011UCB9-7 | Diodes Incorporated | Description: MOSFET P-CH 8V 10A U-WLB1515-9 Packaging: Tape & Reel (TR) Package / Case: 9-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V Power Dissipation (Max): 890mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-WLB1515-9 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1012UCB9-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -6A; Idm: -50A; 1.57W Case: U-WLB1515-9 Mounting: SMD Kind of package: reel; tape Drain current: -6A On-state resistance: 14mΩ Type of transistor: P-MOSFET Power dissipation: 1.57W Polarisation: unipolar Gate charge: 10.5nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -50A Drain-source voltage: -8V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1012UCB9-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -6A; Idm: -50A; 1.57W Case: U-WLB1515-9 Mounting: SMD Kind of package: reel; tape Drain current: -6A On-state resistance: 14mΩ Type of transistor: P-MOSFET Power dissipation: 1.57W Polarisation: unipolar Gate charge: 10.5nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -50A Drain-source voltage: -8V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1012UCB9-7 | Diodes Incorporated | Description: MOSFET P-CH 8V 10A U-WLB1515-9 Packaging: Tape & Reel (TR) Package / Case: 9-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V Power Dissipation (Max): 890mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-WLB1515-9 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1012UCB9-7 | Diodes Incorporated | MOSFET MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1012UFDF-13 | DIODES INC. | Description: DIODES INC. - DMP1012UFDF-13 - Leistungs-MOSFET, p-Kanal, 12 V, 20 A, 0.011 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 500mV euEccn: NLR Verlustleistung: 2.11W Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.011ohm | auf Bestellung 9995 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP1012UFDF-13 | Diodes Inc | Trans MOSFET P-CH 12V 20A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1012UFDF-13 | DIODES INC. | Description: DIODES INC. - DMP1012UFDF-13 - Leistungs-MOSFET, p-Kanal, 12 V, 20 A, 0.011 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 500mV euEccn: NLR Verlustleistung: 2.11W Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.011ohm | auf Bestellung 9995 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP1012UFDF-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -55A Drain current: -12.6A On-state resistance: 40mΩ Type of transistor: P-MOSFET Power dissipation: 1.36W Polarisation: unipolar Drain-source voltage: -12V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1012UFDF-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -55A Drain current: -12.6A On-state resistance: 40mΩ Type of transistor: P-MOSFET Power dissipation: 1.36W Polarisation: unipolar Drain-source voltage: -12V Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1012UFDF-13 | Diodes Incorporated | Description: MOSFET P-CH 12V 12.6A/20A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 4.5V Power Dissipation (Max): 720mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1344 pF @ 10 V | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1012UFDF-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1012UFDF-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -55A Drain current: -12.6A On-state resistance: 40mΩ Type of transistor: P-MOSFET Power dissipation: 1.36W Polarisation: unipolar Drain-source voltage: -12V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1012UFDF-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -55A Drain current: -12.6A On-state resistance: 40mΩ Type of transistor: P-MOSFET Power dissipation: 1.36W Polarisation: unipolar Drain-source voltage: -12V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1012UFDF-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 12.6A/20A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 4.5V Power Dissipation (Max): 720mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1344 pF @ 10 V | auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1012UFDF-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 2454 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP1012UFDF-7 | Diodes Inc | Trans MOSFET P-CH 12V 20A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1012UFDF-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 12.6A/20A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 4.5V Power Dissipation (Max): 720mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1344 pF @ 10 V | auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1012USS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1012USSQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V SO-8 T&R 2.5K | auf Bestellung 2443 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP1018UCB9-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 7.6A U-WLB1515-9 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1022UFDE-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 9.1A 6UDFN | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1022UFDE-7 | Diodes Incorporated | MOSFET 12V P-CH ENH Mode 16mOhm 4.5V -9.1A | auf Bestellung 531000 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||
| DMP1022UFDE-7 | Diodes Inc | Trans MOSFET P-CH 12V 9.1A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1022UFDE-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 9.1A 6UDFN | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1022UFDEQ-7 | Diodes Inc | Trans MOSFET P-CH 12V 9.1A Automotive 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1022UFDEQ-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 9.1A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 42.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2953 pF @ 4 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1022UFDEQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -9A; Idm: -90A; 1.3W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: -90A Drain-source voltage: -12V Drain current: -9A On-state resistance: 0.16Ω Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 42.6nC Kind of channel: enhanced Gate-source voltage: ±8V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1022UFDEQ-7 | Diodes Incorporated | MOSFET 12V P-CH MOSFET | auf Bestellung 2799 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP1022UFDEQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -9A; Idm: -90A; 1.3W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: -90A Drain-source voltage: -12V Drain current: -9A On-state resistance: 0.16Ω Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 42.6nC Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1022UFDEQ-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 9.1A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 42.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2953 pF @ 4 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1022UFDF-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: -90A Drain-source voltage: -12V Drain current: -8.8A On-state resistance: 32mΩ Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 48.3nC Kind of channel: enhanced Gate-source voltage: ±8V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1022UFDF-13 | Diodes Incorporated | MOSFET 12V P-Ch Enh Mode 8Vgss 2712pF 28.6nC | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1022UFDF-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: -90A Drain-source voltage: -12V Drain current: -8.8A On-state resistance: 32mΩ Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 48.3nC Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1022UFDF-13 | Diodes Incorporated | Description: MOSFET P-CH 12V 9.5A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 14.8mOhm @ 4A, 4.5V Power Dissipation (Max): 730mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 48.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 10 V | auf Bestellung 170000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1022UFDF-13 | Diodes Inc | Trans MOSFET P-CH 12V 9.5A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1022UFDF-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: -90A Drain-source voltage: -12V Drain current: -8.8A On-state resistance: 32mΩ Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 48.3nC Kind of channel: enhanced Gate-source voltage: ±8V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1022UFDF-7 | Diodes Incorporated | MOSFET 12V P-Ch Enh Mode 19Vgs 2712pF 28.6nC | auf Bestellung 48156 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP1022UFDF-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: -90A Drain-source voltage: -12V Drain current: -8.8A On-state resistance: 32mΩ Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 48.3nC Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1022UFDF-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 9.5A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V Power Dissipation (Max): 730mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 48.3 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 10 V | auf Bestellung 321000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1022UFDF-7 | Diodes Inc | Trans MOSFET P-CH 12V 9.5A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1022UFDF-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 9.5A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V Power Dissipation (Max): 730mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 48.3 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 10 V | auf Bestellung 321330 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1022UWS-13 | Diodes Incorporated | Description: MOSFET P-CH 12V 7.2A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: V-DFN3020-8 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2847 pF @ 4 V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1022UWS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1022UWS-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1022UWS-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 7.2A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: V-DFN3020-8 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2847 pF @ 4 V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1045U | ams OSRAM | ams OSRAM | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1045U | DIODES INC. | Description: DIODES INC. - DMP1045U - Leistungs-MOSFET, Anreicherungstyp, p-Kanal, 12 V, 5.2 A, 0.026 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 5.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 550mV euEccn: NLR Verlustleistung: 800mW Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.026ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 3325 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP1045U | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1045U-7 | Diodes Incorporated | MOSFET MOSFET BVDSS | auf Bestellung 161647 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP1045U-7 | Diodes Zetex | Trans MOSFET P-CH 12V 5.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1045U-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 4A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 4A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1357 pF @ 10 V | auf Bestellung 12680 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1045U-7 | Diodes Zetex | Trans MOSFET P-CH 12V 5.2A 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP1045U-7 | DIODES INC. | Description: DIODES INC. - DMP1045U-7 - Leistungs-MOSFET, p-Kanal, 12 V, 4 A, 0.026 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 550mV euEccn: NLR Verlustleistung: 800mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.026ohm | auf Bestellung 2981 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP1045U-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 4A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 4A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1357 pF @ 10 V | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1045U-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -3.1A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | auf Bestellung 2960 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP1045U-7 | Diodes Zetex | Trans MOSFET P-CH 12V 5.2A 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP1045U-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -3.1A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke | auf Bestellung 2960 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP1045U-7 | Diodes Inc | Trans MOSFET P-CH 12V 5.2A 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP1045U-7 | DIODES INC. | Description: DIODES INC. - DMP1045U-7 - Leistungs-MOSFET, p-Kanal, 12 V, 4 A, 0.026 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 800mW Gate-Source-Schwellenspannung, max.: 550mV euEccn: NLR Verlustleistung: 800mW Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.026ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.026ohm | auf Bestellung 2981 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP1045U-7 15P. | DIODES/ZETEX | Trans MOSFET P-CH 12V 5.2A Automotive 3-Pin SOT-23 T/R DMP1045U-7 TDMP1045U-7 Diodes Anzahl je Verpackung: 100 Stücke | auf Bestellung 2900 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP1045UCB4-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V~24V X2-WLB0808-4 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1045UCB4-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 2.6A X2-WLB0808 Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V Power Dissipation (Max): 530mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-WLB0808-4 (Type C) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 6 V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1045UFY4-7 | DIODES INC. | Description: DIODES INC. - DMP1045UFY4-7 - Leistungs-MOSFET, p-Kanal, 12 V, 5.5 A, 0.026 ohm, X2-DFN2015, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 5.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 550mV euEccn: NLR Verlustleistung: 700mW Bauform - Transistor: X2-DFN2015 Anzahl der Pins: 3Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.026ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2050 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP1045UFY4-7 | Diodes Incorporated | MOSFET MOSFET BVDSS | auf Bestellung 17726 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP1045UFY4-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.1A Pulsed drain current: -25A Power dissipation: 1.1W Case: X2-DFN2015-3 Gate-source voltage: ±8V On-state resistance: 75mΩ Mounting: SMD Gate charge: 23.7nC Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP1045UFY4-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 5.5A DFN2015H4-3 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN2015H4-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 10 V | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1045UFY4-7 | Diodes Inc | Trans MOSFET P-CH 12V 5.5A 3-Pin X2-DFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1045UFY4-7 | DIODES INC. | Description: DIODES INC. - DMP1045UFY4-7 - Leistungs-MOSFET, p-Kanal, 12 V, 5.5 A, 0.026 ohm, X2-DFN2015, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 5.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 550mV euEccn: NLR Verlustleistung: 700mW Bauform - Transistor: X2-DFN2015 Anzahl der Pins: 3Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.026ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2050 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP1045UFY4-7 | Diodes Zetex | Trans MOSFET P-CH 12V 5.5A 3-Pin X2-DFN T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP1045UFY4-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 5.5A DFN2015H4-3 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN2015H4-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 10 V | auf Bestellung 6801 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1045UFY4-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.1A Pulsed drain current: -25A Power dissipation: 1.1W Case: X2-DFN2015-3 Gate-source voltage: ±8V On-state resistance: 75mΩ Mounting: SMD Gate charge: 23.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 2900 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP1045UQ-7 | Diodes Zetex | Trans MOSFET P-CH 12V 5.2A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 13047000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP1045UQ-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 4A SOT23 T&R 3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 4A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1357 pF @ 10 V | auf Bestellung 13050745 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1045UQ-7 | DIODES INC. | Description: DIODES INC. - DMP1045UQ-7 - Leistungs-MOSFET, p-Kanal, 12 V, 4 A, 0.026 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 550mV euEccn: NLR Verlustleistung: 800mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.026ohm | auf Bestellung 2300 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP1045UQ-7 | Diodes Zetex | Trans MOSFET P-CH 12V 5.2A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1045UQ-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 4A SOT23 T&R 3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 4A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1357 pF @ 10 V | auf Bestellung 13050000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1045UQ-7 | DIODES INC. | Description: DIODES INC. - DMP1045UQ-7 - Leistungs-MOSFET, p-Kanal, 12 V, 4 A, 0.026 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Verlustleistung Pd: 800mW Gate-Source-Schwellenspannung, max.: 550mV euEccn: NLR Verlustleistung: 800mW Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.026ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.026ohm | auf Bestellung 2300 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP1045UQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 124106 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP1045UQ-7 | Diodes Inc | Trans MOSFET P-CH 12V 5.2A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1046UFDB-13 | Diodes Incorporated | Description: MOSFET 2P-CH 12V 3.8A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.8A Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) | auf Bestellung 18950 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1046UFDB-13 | Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 8Vgs 915pF 10.7nC | auf Bestellung 77012 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP1046UFDB-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -15A; 2.2W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain current: -4A On-state resistance: 0.115Ω Type of transistor: P-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 17.9nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -15A Drain-source voltage: -12V Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1046UFDB-13 | Diodes Incorporated | Description: MOSFET 2P-CH 12V 3.8A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.8A Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1046UFDB-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -15A; 2.2W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain current: -4A On-state resistance: 0.115Ω Type of transistor: P-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 17.9nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -15A Drain-source voltage: -12V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1046UFDB-7 | Diodes Zetex | Trans MOSFET P-CH 12V 3.8A 6-Pin UDFN EP T/R | auf Bestellung 3014 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP1046UFDB-7 | Diodes Incorporated | Description: MOSFET 2P-CH 12V 3.8A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.8A Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active | auf Bestellung 68845 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1046UFDB-7 | Diodes Inc | Trans MOSFET P-CH 12V 3.8A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1046UFDB-7 | Diodes Zetex | Trans MOSFET P-CH 12V 3.8A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1046UFDB-7 | Diodes Incorporated | Description: MOSFET 2P-CH 12V 3.8A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.8A Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active | auf Bestellung 63000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1046UFDB-7 | Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 8Vgs 915pF 10.7nC | auf Bestellung 6346 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP1055UFDB-7 | Diodes Incorporated | Description: MOSFET 2PCH 12V 3.9A UDFN2020 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1055UFDB-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -25A; 1.89W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain current: -4A On-state resistance: 0.215Ω Type of transistor: P-MOSFET Power dissipation: 1.89W Polarisation: unipolar Gate charge: 20.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -25A Drain-source voltage: -12V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1055UFDB-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -25A; 1.89W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain current: -4A On-state resistance: 0.215Ω Type of transistor: P-MOSFET Power dissipation: 1.89W Polarisation: unipolar Gate charge: 20.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -25A Drain-source voltage: -12V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1055UFDB-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 1428 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP1055USW-13 | Diodes Incorporated | MOSFET Dual P-Ch Enh FET Vdss -12V 8Vgss | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1055USW-13 | Diodes Incorporated | Description: MOSFET P-CH 12V 3.8A SOT363 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1055USW-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -20A; 1.03W; SOT363 Case: SOT363 Mounting: SMD Kind of package: reel; tape Drain current: -3A On-state resistance: 0.15Ω Type of transistor: P-MOSFET Power dissipation: 1.03W Polarisation: unipolar Gate charge: 20.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Drain-source voltage: -12V Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1055USW-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -20A; 1.03W; SOT363 Case: SOT363 Mounting: SMD Kind of package: reel; tape Drain current: -3A On-state resistance: 0.15Ω Type of transistor: P-MOSFET Power dissipation: 1.03W Polarisation: unipolar Gate charge: 20.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Drain-source voltage: -12V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1055USW-7 | Diodes Inc | P-Channel Enhancement Mode MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP1055USW-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 3.8A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V Power Dissipation (Max): 660mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1028 pF @ 6 V | auf Bestellung 42000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1055USW-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -20A; 1.03W; SOT363 Case: SOT363 Mounting: SMD Kind of package: reel; tape Drain current: -3A On-state resistance: 0.15Ω Type of transistor: P-MOSFET Power dissipation: 1.03W Polarisation: unipolar Gate charge: 20.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Drain-source voltage: -12V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1055USW-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -20A; 1.03W; SOT363 Case: SOT363 Mounting: SMD Kind of package: reel; tape Drain current: -3A On-state resistance: 0.15Ω Type of transistor: P-MOSFET Power dissipation: 1.03W Polarisation: unipolar Gate charge: 20.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Drain-source voltage: -12V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1055USW-7 | Diodes Incorporated | MOSFET Dual P-Ch Enh FET Vdss -12V 8Vgss | auf Bestellung 3613 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP1055USW-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 3.8A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V Power Dissipation (Max): 660mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1028 pF @ 6 V | auf Bestellung 42000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1070UCA3-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1070UCA3-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 3.6A X4DSN0607-3 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 400mA, 4.5V Power Dissipation (Max): 710mW Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: X4-DSN0607-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 1.45 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 147 pF @ 6 V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1080UCB4-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 3.3A U-WLB1010-4 | auf Bestellung 72000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DMP1080UCB4-7 | Diodes Inc | Trans MOSFET P-CH 12V 3.3A 4-Pin U-WLB T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1080UCB4-7 | Diodes Zetex | Trans MOSFET P-CH 12V 3.3A 4-Pin U-WLB T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1080UCB4-7 | Diodes Incorporated | MOSFET P-Ch Enh Mode FET 80mOhm -12V -3.3A | auf Bestellung 5748 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP1080UCB4-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 3.3A U-WLB1010-4 | auf Bestellung 72147 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DMP1081UCB4-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 3A U-WLB1010-4 Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.3A (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 0.9V Power Dissipation (Max): 820mW (Ta) Vgs(th) (Max) @ Id: 650mV @ 250µA Supplier Device Package: U-WLB1010-4 Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 6 V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1081UCB4-7 | Diodes Inc | Trans MOSFET P-CH 12V 3.3A 4-Pin U-WLB T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1081UCB4-7 | Diodes Zetex | Trans MOSFET P-CH 12V 3.3A 4-Pin U-WLB T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1081UCB4-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 2085 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP1081UCB4-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 3A U-WLB1010-4 Packaging: Cut Tape (CT) Package / Case: 4-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.3A (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 0.9V Power Dissipation (Max): 820mW (Ta) Vgs(th) (Max) @ Id: 650mV @ 250µA Supplier Device Package: U-WLB1010-4 Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 6 V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1096UCB4-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-WLB1010-4,3K | auf Bestellung 5478 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||
| DMP1096UCB4-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 2.6A U-WLB1010-4 Packaging: Cut Tape (CT) Package / Case: 4-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 102mOhm @ 500mA, 4.5V Power Dissipation (Max): 820mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-WLB1010-4 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -5V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 251 pF @ 6 V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1096UCB4-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 2.6A U-WLB1010-4 Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 102mOhm @ 500mA, 4.5V Power Dissipation (Max): 820mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-WLB1010-4 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -5V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 251 pF @ 6 V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP10H088SPS-13 | Diodes Inc | P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP10H400SE-13 | Diodes Inc | Trans MOSFET P-CH 100V 2.3A 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP10H400SE-13 | Diodes Incorporated | Description: MOSFET P-CH 100V 2.3A/6A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 6A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 5A, 10V Power Dissipation (Max): 2W (Ta), 13.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1239 pF @ 25 V | auf Bestellung 275576 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP10H400SE-13 | Diodes Zetex | Trans MOSFET P-CH 100V 2.3A 4-Pin(3+Tab) SOT-223 T/R | auf Bestellung 247500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP10H400SE-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223 Case: SOT223 Mounting: SMD Kind of package: reel; tape Drain current: -2.1A On-state resistance: 0.3Ω Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: -100V | auf Bestellung 2610 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP10H400SE-13 | Diodes Zetex | Trans MOSFET P-CH 100V 2.3A 4-Pin(3+Tab) SOT-223 T/R | auf Bestellung 338 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP10H400SE-13 | DIODES INC. | Description: DIODES INC. - DMP10H400SE-13 - Leistungs-MOSFET, p-Kanal, 100 V, 6 A, 0.203 ohm, SOT-223, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 2W Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 2W Bauform - Transistor: SOT-223 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.203ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.203ohm | auf Bestellung 5988 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP10H400SE-13 | Diodes Inc | Trans MOSFET P-CH 100V 2.3A 4-Pin(3+Tab) SOT-223 T/R | auf Bestellung 80000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP10H400SE-13 | Diodes Incorporated | Description: MOSFET P-CH 100V 2.3A/6A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 6A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 5A, 10V Power Dissipation (Max): 2W (Ta), 13.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1239 pF @ 25 V | auf Bestellung 272500 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP10H400SE-13 | Diodes Zetex | Trans MOSFET P-CH 100V 2.3A 4-Pin(3+Tab) SOT-223 T/R | auf Bestellung 338 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP10H400SE-13 | Diodes Incorporated | MOSFET 100V P-Ch Enh FET 250mOhm -2.3A | auf Bestellung 19447 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP10H400SE-13 | Diodes Zetex | Trans MOSFET P-CH 100V 2.3A 4-Pin(3+Tab) SOT-223 T/R | auf Bestellung 80000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP10H400SE-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223 Case: SOT223 Mounting: SMD Kind of package: reel; tape Drain current: -2.1A On-state resistance: 0.3Ω Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: -100V Anzahl je Verpackung: 1 Stücke | auf Bestellung 2610 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP10H400SE-13 | DIODES INC. | Description: DIODES INC. - DMP10H400SE-13 - Leistungs-MOSFET, p-Kanal, 100 V, 6 A, 0.203 ohm, SOT-223, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 2W Bauform - Transistor: SOT-223 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.203ohm | auf Bestellung 5988 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP10H400SE-13 | Diodes Zetex | Trans MOSFET P-CH 100V 2.3A 4-Pin(3+Tab) SOT-223 T/R | auf Bestellung 80000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP10H400SE-13 | Diodes Zetex | Trans MOSFET P-CH 100V 2.3A 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP10H400SEQ-13 | Diodes Zetex | Trans MOSFET P-CH 100V 2.3A Automotive 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP10H400SEQ-13 | Diodes Incorporated | MOSFET 100V P-Ch Enh FET 250mOhm -10V -2.3A | auf Bestellung 3880 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||
| DMP10H400SEQ-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223 Case: SOT223 Mounting: SMD Kind of package: reel; tape Application: automotive industry Drain current: -2.1A On-state resistance: 0.3Ω Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: -100V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP10H400SEQ-13 | Diodes Incorporated | Description: MOSFET P-CH 100V 2.3A/6A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 6A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 5A, 10V Power Dissipation (Max): 2W (Ta), 13.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1239 pF @ 25 V | auf Bestellung 434181 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP10H400SEQ-13 | Diodes Zetex | Trans MOSFET P-CH 100V 2.3A Automotive 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP10H400SEQ-13 | Diodes Incorporated | Description: MOSFET P-CH 100V 2.3A/6A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 6A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 5A, 10V Power Dissipation (Max): 2W (Ta), 13.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1239 pF @ 25 V | auf Bestellung 432500 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP10H400SEQ-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223 Case: SOT223 Mounting: SMD Kind of package: reel; tape Application: automotive industry Drain current: -2.1A On-state resistance: 0.3Ω Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: -100V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP10H400SK3-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252 Case: TO252 Mounting: SMD Kind of package: reel; tape Drain current: -8A On-state resistance: 0.3Ω Type of transistor: P-MOSFET Power dissipation: 42W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: -100V Anzahl je Verpackung: 1 Stücke | auf Bestellung 1469 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP10H400SK3-13 | DIODES INC. | Description: DIODES INC. - DMP10H400SK3-13 - Leistungs-MOSFET, p-Kanal, 100 V, 9 A, 0.19 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 9A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 42W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.19ohm | auf Bestellung 7701 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP10H400SK3-13 | Diodes Incorporated | Description: MOSFET P-CH 100V 9A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 5A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1239 pF @ 25 V | auf Bestellung 705000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP10H400SK3-13 | Diodes Zetex | Trans MOSFET P-CH 100V 9A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 1974 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP10H400SK3-13 | Diodes Zetex | Trans MOSFET P-CH 100V 9A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 25000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP10H400SK3-13 | Diodes Zetex | Trans MOSFET P-CH 100V 9A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 1974 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP10H400SK3-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252 Case: TO252 Mounting: SMD Kind of package: reel; tape Drain current: -8A On-state resistance: 0.3Ω Type of transistor: P-MOSFET Power dissipation: 42W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: -100V | auf Bestellung 1469 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP10H400SK3-13 | Diodes Zetex | Trans MOSFET P-CH 100V 9A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 25000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP10H400SK3-13 | DIODES INC. | Description: DIODES INC. - DMP10H400SK3-13 - Leistungs-MOSFET, p-Kanal, 100 V, 9 A, 0.19 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 9A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Verlustleistung Pd: 42W Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 42W Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Betriebswiderstand, Rds(on): 0.19ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.19ohm | auf Bestellung 7701 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP10H400SK3-13 | Diodes Incorporated | Description: MOSFET P-CH 100V 9A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 5A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1239 pF @ 25 V | auf Bestellung 706851 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP10H400SK3-13 | Diodes Zetex | Trans MOSFET P-CH 100V 9A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 17500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP10H400SK3-13 | Diodes Inc | Trans MOSFET P-CH 100V 9A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 25000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP10H400SK3-13 | Diodes Zetex | Trans MOSFET P-CH 100V 9A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 17500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP10H400SK3-13 | Diodes Zetex | Trans MOSFET P-CH 100V 9A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 645000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP10H400SK3-13 | Diodes Incorporated | MOSFET 100V P-CH MOSFET | auf Bestellung 201671 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP10H4D2S | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP10H4D2S-13 | Diodes Incorporated | MOSFET P-Ch Enh Mode FET 100V 20Vgss 87pF | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP10H4D2S-13 | Diodes Incorporated | Description: MOSFET P-CH 100V 270MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V Power Dissipation (Max): 380mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP10H4D2S-13 | Diodes Inc | 100V P-CHANNEL ENHANCEMENT MODE MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP10H4D2S-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -210mA; Idm: -1A; 440mW Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain current: -210mA On-state resistance: 5mΩ Type of transistor: P-MOSFET Power dissipation: 0.44W Polarisation: unipolar Gate charge: 1.8nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -1A Drain-source voltage: -100V Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP10H4D2S-13 | Diodes Zetex | Trans MOSFET P-CH 100V 0.27A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP10H4D2S-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -210mA; Idm: -1A; 440mW Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain current: -210mA On-state resistance: 5mΩ Type of transistor: P-MOSFET Power dissipation: 0.44W Polarisation: unipolar Gate charge: 1.8nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -1A Drain-source voltage: -100V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP10H4D2S-7 | Diodes Zetex | Trans MOSFET P-CH 100V 0.27A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP10H4D2S-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -0.21A; 0.38W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Drain current: -210mA On-state resistance: 5Ω Type of transistor: P-MOSFET Power dissipation: 0.38W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: -100V Anzahl je Verpackung: 5 Stücke | auf Bestellung 70 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP10H4D2S-7 | DIODES INC. | Description: DIODES INC. - DMP10H4D2S-7 - Leistungs-MOSFET, p-Kanal, 100 V, 270 mA, 2.8 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 270mA hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.3V euEccn: NLR Verlustleistung: 380mW Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2.8ohm | auf Bestellung 24640 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP10H4D2S-7 | Diodes Incorporated | Description: MOSFET P-CH 100V 270MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V Power Dissipation (Max): 380mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V | auf Bestellung 3312364 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP10H4D2S-7 | Diodes Zetex | Trans MOSFET P-CH 100V 0.27A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP10H4D2S-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -0.21A; 0.38W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Drain current: -210mA On-state resistance: 5Ω Type of transistor: P-MOSFET Power dissipation: 0.38W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: -100V | auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP10H4D2S-7 | Diodes Incorporated | MOSFET P-Ch Enh Mode FET 100V 20Vgss 87pF | auf Bestellung 205709 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP10H4D2S-7 | DIODES INC. | Description: DIODES INC. - DMP10H4D2S-7 - Leistungs-MOSFET, p-Kanal, 100 V, 270 mA, 2.8 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 270mA hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Verlustleistung Pd: 380mW Gate-Source-Schwellenspannung, max.: 2.3V euEccn: NLR Verlustleistung: 380mW Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Betriebswiderstand, Rds(on): 2.8ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2.8ohm | auf Bestellung 24640 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP10H4D2S-7 | Diodes Incorporated | Description: MOSFET P-CH 100V 270MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V Power Dissipation (Max): 380mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V | auf Bestellung 3306000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP10H4D2S-7 | Diodes Inc | Trans MOSFET P-CH 100V 0.27A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP10H4D2S-7 P10. | DIODES/ZETEX | Trans MOSFET P-CH 100V 0.27A Automotive 3-Pin SOT-23 T/R DMP10H4D2S-7 TDMP10H4D2S-7 Diodes Anzahl je Verpackung: 100 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP10H4D2S-7-50 | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V SOT23 T&R Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V Power Dissipation (Max): 380mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP10H4D2S-7-50 | Diodes Zetex | MOSFET BVDSS: 61V100V SOT23 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP10H4D2SQ-13 | Diodes Inc | MOSFET BVDSS: 61V100V SOT23 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP10H4D2SQ-7 | Diodes Inc | MOSFET BVDSS: 61V100V SOT23 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1100UCB4-7 | DIODES INC. | Description: DIODES INC. - DMP1100UCB4-7 - Leistungs-MOSFET, p-Kanal, 12 V, 2.5 A, 0.065 ohm, X2-WLB0808, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 550mV euEccn: NLR Verlustleistung: 670mW Bauform - Transistor: X2-WLB0808 Anzahl der Pins: 4Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.065ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP1100UCB4-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; Idm: -13A; 1.1W Mounting: SMD Case: X2-WLB0808-4 Kind of package: reel; tape Power dissipation: 1.1W Drain-source voltage: -12V Drain current: -2.6A On-state resistance: 0.4Ω Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 14nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -13A | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1100UCB4-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 2.5A WLB0808 Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 83mOhm @ 3A, 4.5V Power Dissipation (Max): 670mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: X2-WLB0808-4 Drive Voltage (Max Rds On, Min Rds On): 1.3V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 6 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 171745 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1100UCB4-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 2989 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP1100UCB4-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; Idm: -13A; 1.1W Mounting: SMD Case: X2-WLB0808-4 Kind of package: reel; tape Power dissipation: 1.1W Drain-source voltage: -12V Drain current: -2.6A On-state resistance: 0.4Ω Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 14nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -13A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1100UCB4-7 | DIODES INC. | Description: DIODES INC. - DMP1100UCB4-7 - Leistungs-MOSFET, p-Kanal, 12 V, 2.5 A, 0.065 ohm, X2-WLB0808, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 670mW Gate-Source-Schwellenspannung, max.: 550mV euEccn: NLR Verlustleistung: 670mW Bauform - Transistor: X2-WLB0808 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 4Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.065ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.065ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP1100UCB4-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 2.5A WLB0808 Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 83mOhm @ 3A, 4.5V Power Dissipation (Max): 670mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: X2-WLB0808-4 Drive Voltage (Max Rds On, Min Rds On): 1.3V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 6 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 168000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1200UFR4-7 | Diodes Zetex | Trans MOSFET P-CH 12V 2A 3-Pin X2-DFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1200UFR4-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 2A X2-DFN1010-3 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V Power Dissipation (Max): 480mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1010-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 514 pF @ 5 V | auf Bestellung 57000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1200UFR4-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -2A; 1.26W; X2-DFN1010-3 Mounting: SMD Case: X2-DFN1010-3 Drain-source voltage: -12V Drain current: -2A On-state resistance: 0.38Ω Type of transistor: P-MOSFET Power dissipation: 1.26W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.8nC Kind of channel: enhanced Gate-source voltage: ±8V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1200UFR4-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 2A X2-DFN1010-3 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V Power Dissipation (Max): 480mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1010-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 514 pF @ 5 V | auf Bestellung 57000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DMP1200UFR4-7 | Diodes Incorporated | MOSFET P-Ch Enh Mode FET Vdss -12V 8Vgss | auf Bestellung 2960 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP1200UFR4-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -2A; 1.26W; X2-DFN1010-3 Mounting: SMD Case: X2-DFN1010-3 Drain-source voltage: -12V Drain current: -2A On-state resistance: 0.38Ω Type of transistor: P-MOSFET Power dissipation: 1.26W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.8nC Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1245UFCL-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 6.6A X1-DFN1616 Packaging: Tape & Reel (TR) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 4A, 4.5V Power Dissipation (Max): 613mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: X1-DFN1616-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 26.1 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1357.4 pF @ 10 V | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1245UFCL-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -5.25A; Idm: -16.67A; 1.7W Polarisation: unipolar Type of transistor: P-MOSFET Power dissipation: 1.7W Kind of package: reel; tape Case: X1-DFN1616-6 Mounting: SMD Gate charge: 26.1nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -16.67A Drain-source voltage: -12V Drain current: -5.25A On-state resistance: 0.1Ω | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1245UFCL-7 | Diodes Incorporated | MOSFET 12V P-CH ENH MOSFET LOW RDSon High PERF | auf Bestellung 3675 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP1245UFCL-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -5.25A; Idm: -16.67A; 1.7W Polarisation: unipolar Type of transistor: P-MOSFET Power dissipation: 1.7W Kind of package: reel; tape Case: X1-DFN1616-6 Mounting: SMD Gate charge: 26.1nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -16.67A Drain-source voltage: -12V Drain current: -5.25A On-state resistance: 0.1Ω Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1245UFCL-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 6.6A X1-DFN1616 Packaging: Cut Tape (CT) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 4A, 4.5V Power Dissipation (Max): 613mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: X1-DFN1616-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 26.1 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1357.4 pF @ 10 V | auf Bestellung 12713 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1245UFCL-7 | Diodes Inc | Trans MOSFET P-CH 12V 6.6A 7-Pin DFN EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP1245UFCL-7 | Diodes Zetex | Trans MOSFET P-CH 12V 6.6A 7-Pin DFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1555UFA-7B | Diodes Zetex | Trans MOSFET P-CH 12V 0.2A 3-Pin X2-DFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1555UFA-7B | Diodes Incorporated | MOSFET 12 P-Ch Enh FET 8 VGS 55.4pF 0.84nC | auf Bestellung 22933 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP1555UFA-7B | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -0.2A; 0.36W; X2-DFN0806-3 Mounting: SMD Drain-source voltage: -12V Drain current: -200mA On-state resistance: 5Ω Type of transistor: P-MOSFET Power dissipation: 0.36W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Case: X2-DFN0806-3 Anzahl je Verpackung: 10 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1555UFA-7B | Diodes Incorporated | Description: MOSFET P-CH 12V 200MA 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 800mOhm @ 200mA, 4.5V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0806-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 0.84 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 55.4 pF @ 10 V | auf Bestellung 230000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1555UFA-7B | Diodes Zetex | Trans MOSFET P-CH 12V 0.2A 3-Pin X2-DFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP1555UFA-7B | Diodes Incorporated | Description: MOSFET P-CH 12V 200MA 3DFN Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 800mOhm @ 200mA, 4.5V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0806-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 0.84 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 55.4 pF @ 10 V | auf Bestellung 234906 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP1555UFA-7B | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -0.2A; 0.36W; X2-DFN0806-3 Mounting: SMD Drain-source voltage: -12V Drain current: -200mA On-state resistance: 5Ω Type of transistor: P-MOSFET Power dissipation: 0.36W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Case: X2-DFN0806-3 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2002UPS-13 | Diodes Inc | Trans MOSFET P-CH 20V 60A 8-Pin PowerDI EP T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2002UPS-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 60A PWRDI5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V | auf Bestellung 35000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2002UPS-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -33.5A; Idm: -100A; 6.25W Kind of package: reel; tape Mounting: SMD Case: PowerDI5060-8 Pulsed drain current: -100A Drain-source voltage: -20V Drain current: -33.5A On-state resistance: 3.8mΩ Type of transistor: P-MOSFET Power dissipation: 6.25W Polarisation: unipolar Gate charge: 585nC Kind of channel: enhanced Gate-source voltage: ±12V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2002UPS-13 | Diodes Zetex | Trans MOSFET P-CH 20V 60A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2002UPS-13 | Diodes Incorporated | MOSFET 20V P-Ch Enh FET 12Vgss 104W | auf Bestellung 2332 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2002UPS-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -33.5A; Idm: -100A; 6.25W Kind of package: reel; tape Mounting: SMD Case: PowerDI5060-8 Pulsed drain current: -100A Drain-source voltage: -20V Drain current: -33.5A On-state resistance: 3.8mΩ Type of transistor: P-MOSFET Power dissipation: 6.25W Polarisation: unipolar Gate charge: 585nC Kind of channel: enhanced Gate-source voltage: ±12V Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2002UPS-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 60A PWRDI5060-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V | auf Bestellung 39348 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2003UPS-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -120A; Idm: -350A; 2.7W Case: PowerDI5060-8 Mounting: SMD Kind of package: reel; tape Gate charge: 177nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 4mΩ Drain current: -120A Drain-source voltage: -20V Pulsed drain current: -350A Polarisation: unipolar Power dissipation: 2.7W Type of transistor: P-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2003UPS-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 150A PWRDI5060-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8352 pF @ 10 V | auf Bestellung 7411 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2003UPS-13 | DIODES INC. | Description: DIODES INC. - DMP2003UPS-13 - Leistungs-MOSFET, p-Kanal, 20 V, 150 A, 0.0017 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 150A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 1.4W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0017ohm | auf Bestellung 7726 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2003UPS-13 | Diodes Zetex | Trans MOSFET P-CH 20V 150A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2003UPS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 4779 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2003UPS-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -120A; Idm: -350A; 2.7W Case: PowerDI5060-8 Mounting: SMD Kind of package: reel; tape Gate charge: 177nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 4mΩ Drain current: -120A Drain-source voltage: -20V Pulsed drain current: -350A Polarisation: unipolar Power dissipation: 2.7W Type of transistor: P-MOSFET Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2003UPS-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 150A PWRDI5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8352 pF @ 10 V | auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2003UPS-13 | DIODES INC. | Description: DIODES INC. - DMP2003UPS-13 - Leistungs-MOSFET, p-Kanal, 20 V, 150 A, 0.0017 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 150A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 1.4W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0017ohm | auf Bestellung 7726 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2003UPS-13 | Diodes Zetex | Trans MOSFET P-CH 20V 150A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004DMK-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.55A 6-Pin SOT-26 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2004DMK-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.55A 6-Pin SOT-26 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004DMK-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.55A 6-Pin SOT-26 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004DMK-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -550mA; Idm: -1.9A; 500mW Kind of package: reel; tape Mounting: SMD Case: SOT26 Pulsed drain current: -1.9A Drain-source voltage: -20V Drain current: -550mA On-state resistance: 2mΩ Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±8V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004DMK-7 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 0.55A SOT-26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 550mA Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-26 | auf Bestellung 27000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2004DMK-7 | Diodes Incorporated | MOSFET 500mW -20Vdss | auf Bestellung 2635 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2004DMK-7 | Diodes Inc | Trans MOSFET P-CH 20V 0.55A 6-Pin SOT-26 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004DMK-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -550mA; Idm: -1.9A; 500mW Kind of package: reel; tape Mounting: SMD Case: SOT26 Pulsed drain current: -1.9A Drain-source voltage: -20V Drain current: -550mA On-state resistance: 2mΩ Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004DWK | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| DMP2004DWK-7 | DIODES | SOT23-6 | auf Bestellung 2065 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DMP2004DWK-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.43A 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004DWK-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; 250mW; SOT363 Kind of package: reel; tape Mounting: SMD Case: SOT363 Drain-source voltage: -20V Drain current: -310mA On-state resistance: 2mΩ Type of transistor: P-MOSFET Power dissipation: 0.25W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±8V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004DWK-7 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 0.43A SOT-363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 430mA Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2004DWK-7 | Diodes Incorporated | MOSFET Dual P-Channel | auf Bestellung 9405 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2004DWK-7 | Diodes Inc | Trans MOSFET P-CH 20V 0.43A 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004DWK-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; 250mW; SOT363 Kind of package: reel; tape Mounting: SMD Case: SOT363 Drain-source voltage: -20V Drain current: -310mA On-state resistance: 2mΩ Type of transistor: P-MOSFET Power dissipation: 0.25W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004DWK-7 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 0.43A SOT-363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 430mA Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2004K | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| DMP2004K-7 | Diodes Incorporated | MOSFET P-Channel | auf Bestellung 44385 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2004K-7 | Diodes Inc | Trans MOSFET P-CH 20V 0.6A 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2004K-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 600MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V Power Dissipation (Max): 550mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 16 V | auf Bestellung 974333 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2004K-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.6A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2004K-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.6A 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2004K-7 | DIODES INC. | Description: DIODES INC. - DMP2004K-7 - Leistungs-MOSFET, p-Kanal, 20 V, 600 mA, 0.7 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Verlustleistung: 550mW Kanaltyp: p-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.7ohm rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 SVHC: No SVHC (17-Jan-2023) | auf Bestellung 2910 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2004K-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.6A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004K-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 600MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V Power Dissipation (Max): 550mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 16 V | auf Bestellung 969000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2004K-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.6A 3-Pin SOT-23 T/R | auf Bestellung 561000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2004K-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.6A 3-Pin SOT-23 T/R | auf Bestellung 2489 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2004K-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.6A 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2004K-7 | DIODES INC. | Description: DIODES INC. - DMP2004K-7 - Leistungs-MOSFET, p-Kanal, 20 V, 600 mA, 0.7 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 600mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 550mW Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 550mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.7ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.7ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 2910 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2004K-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.6A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2004K-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.6A; 0.55W; SOT23 Kind of package: reel; tape Mounting: SMD Case: SOT23 Drain-source voltage: -20V Drain current: -600mA On-state resistance: 2Ω Type of transistor: P-MOSFET Power dissipation: 0.55W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V | auf Bestellung 2685 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2004K-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.6A; 0.55W; SOT23 Kind of package: reel; tape Mounting: SMD Case: SOT23 Drain-source voltage: -20V Drain current: -600mA On-state resistance: 2Ω Type of transistor: P-MOSFET Power dissipation: 0.55W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 5 Stücke | auf Bestellung 2685 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP2004K-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.6A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2004K-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.6A 3-Pin SOT-23 T/R | auf Bestellung 2489 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2004K-7-F | 10+ROHS SOT-23 | auf Bestellung 39000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| DMP2004KQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.6A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004KQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V 24V SOT23 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004KQ-7 | Diodes Inc | Trans MOSFET P-CH 20V 0.6A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004KQ-7 | Diodes Incorporated | Description: DIODE Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V Power Dissipation (Max): 550mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 16 V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004TK | Diodes Incorporated | Description: DIODE Packaging: Bulk Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 430mA (Ta) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 430mA, 4.5V Power Dissipation (Max): 230mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.97 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 16 V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004TK-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; Idm: -0.75A; 320mW Kind of package: reel; tape Mounting: SMD Case: SOT523 Pulsed drain current: -0.75A Drain-source voltage: -20V Drain current: -310mA On-state resistance: 2.4mΩ Type of transistor: P-MOSFET Power dissipation: 0.32W Polarisation: unipolar Gate charge: 970pC Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004TK-7 | Diodes Incorporated | MOSFET P-Channel .15W | auf Bestellung 14501 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2004TK-7 | Diodes Inc | Trans MOSFET P-CH 20V 0.43A 3-Pin SOT-523 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004TK-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.43A 3-Pin SOT-523 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004TK-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; Idm: -0.75A; 320mW Kind of package: reel; tape Mounting: SMD Case: SOT523 Pulsed drain current: -0.75A Drain-source voltage: -20V Drain current: -310mA On-state resistance: 2.4mΩ Type of transistor: P-MOSFET Power dissipation: 0.32W Polarisation: unipolar Gate charge: 970pC Kind of channel: enhanced Gate-source voltage: ±8V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004TK-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 430MA SOT523 Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 430mA (Ta) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 430mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 16 V | auf Bestellung 240603 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2004TK-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.43A 3-Pin SOT-523 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004TK-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.43A 3-Pin SOT-523 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004TK-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 430MA SOT523 Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 430mA (Ta) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 430mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 16 V | auf Bestellung 234000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2004TK-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.43A 3-Pin SOT-523 T/R | auf Bestellung 180000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2004TK-7-79 | Diodes Incorporated | Description: DIODE Packaging: Bulk Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 430mA (Ta) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 430mA, 4.5V Power Dissipation (Max): 230mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.97 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 16 V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004UFG-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -95A; Idm: -180A; 2.4W Kind of package: reel; tape Mounting: SMD Case: PowerDI3333-8 Pulsed drain current: -180A Drain-source voltage: -20V Drain current: -95A On-state resistance: 7mΩ Type of transistor: P-MOSFET Power dissipation: 2.4W Polarisation: unipolar Gate charge: 83nC Kind of channel: enhanced Gate-source voltage: ±12V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004UFG-13 | Diodes Zetex | 20V P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004UFG-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V PowerDI3333 Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 115A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 15A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004UFG-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -95A; Idm: -180A; 2.4W Kind of package: reel; tape Mounting: SMD Case: PowerDI3333-8 Pulsed drain current: -180A Drain-source voltage: -20V Drain current: -95A On-state resistance: 7mΩ Type of transistor: P-MOSFET Power dissipation: 2.4W Polarisation: unipolar Gate charge: 83nC Kind of channel: enhanced Gate-source voltage: ±12V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004UFG-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V PowerDI3333-8 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004UFG-13 | Diodes Inc | 20V P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004UFG-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V PowerDI3333 Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 115A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 15A, 10V Power Dissipation (Max): 1W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004UFG-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -95A; Idm: -180A; 2.4W Kind of package: reel; tape Mounting: SMD Case: PowerDI3333-8 Pulsed drain current: -180A Drain-source voltage: -20V Drain current: -95A On-state resistance: 7mΩ Type of transistor: P-MOSFET Power dissipation: 2.4W Polarisation: unipolar Gate charge: 83nC Kind of channel: enhanced Gate-source voltage: ±12V Anzahl je Verpackung: 2000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004UFG-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V PowerDI3333-8 T&R 2K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004UFG-7 | Diodes Inc | 20V P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004UFG-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -95A; Idm: -180A; 2.4W Kind of package: reel; tape Mounting: SMD Case: PowerDI3333-8 Pulsed drain current: -180A Drain-source voltage: -20V Drain current: -95A On-state resistance: 7mΩ Type of transistor: P-MOSFET Power dissipation: 2.4W Polarisation: unipolar Gate charge: 83nC Kind of channel: enhanced Gate-source voltage: ±12V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004UFG-7 | Diodes Zetex | 20V P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004VK-7 | Diodes Incorporated | MOSFET Dual P-Channel | auf Bestellung 50653 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2004VK-7 | Diodes Inc | Trans MOSFET P-CH 20V 0.53A 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004VK-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.53A 6-Pin SOT-563 T/R | auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2004VK-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.53A 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004VK-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.44A; 0.4W; SOT563 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -440mA Power dissipation: 0.4W Case: SOT563 Gate-source voltage: ±8V On-state resistance: 1.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004VK-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.53A 6-Pin SOT-563 T/R | auf Bestellung 2340 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2004VK-7 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 0.53A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 400mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 530mA Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 235624 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2004VK-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.53A 6-Pin SOT-563 T/R | auf Bestellung 57000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2004VK-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.53A 6-Pin SOT-563 T/R | auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2004VK-7 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 0.53A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 400mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 530mA Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 234000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2004VK-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.44A; 0.4W; SOT563 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -440mA Power dissipation: 0.4W Case: SOT563 Gate-source voltage: ±8V On-state resistance: 1.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004VK-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.53A 6-Pin SOT-563 T/R | auf Bestellung 2340 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2004WK | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| DMP2004WK-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.4A 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004WK-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 400MA SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V Power Dissipation (Max): 250mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 16 V | auf Bestellung 66000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2004WK-7 | DIODES | 09+ TO92 | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DMP2004WK-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.4A 3-Pin SOT-323 T/R | auf Bestellung 66000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2004WK-7 | Diodes Incorporated | MOSFET 250mW -20Vdss | auf Bestellung 35582 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2004WK-7 | Diodes Inc | Trans MOSFET P-CH 20V 0.4A 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004WK-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 400MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V Power Dissipation (Max): 250mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 16 V | auf Bestellung 68810 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2004WK-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -400mA; Idm: -1.4A; 250mW Kind of package: reel; tape Mounting: SMD Case: SOT323 Pulsed drain current: -1.4A Drain-source voltage: -20V Drain current: -400mA On-state resistance: 2mΩ Type of transistor: P-MOSFET Power dissipation: 0.25W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004WK-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.4A 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2004WK-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -400mA; Idm: -1.4A; 250mW Kind of package: reel; tape Mounting: SMD Case: SOT323 Pulsed drain current: -1.4A Drain-source voltage: -20V Drain current: -400mA On-state resistance: 2mΩ Type of transistor: P-MOSFET Power dissipation: 0.25W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±8V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2005UFG | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2005UFG-13 | Diodes Inc | Trans MOSFET P-CH 20V 19A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2005UFG-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 89A POWERDI3333 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2005UFG-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -100A; 2.2W Kind of package: reel; tape Mounting: SMD Case: PowerDI3333-8 Pulsed drain current: -100A Drain-source voltage: -20V Drain current: -15A On-state resistance: 14mΩ Type of transistor: P-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 125nC Kind of channel: enhanced Gate-source voltage: ±10V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2005UFG-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -100A; 2.2W Kind of package: reel; tape Mounting: SMD Case: PowerDI3333-8 Pulsed drain current: -100A Drain-source voltage: -20V Drain current: -15A On-state resistance: 14mΩ Type of transistor: P-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 125nC Kind of channel: enhanced Gate-source voltage: ±10V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2005UFG-13 | Diodes Zetex | Trans MOSFET P-CH 20V 19A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2005UFG-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 3137 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2005UFG-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -100A; 2.2W Kind of package: reel; tape Mounting: SMD Case: PowerDI3333-8 Pulsed drain current: -100A Drain-source voltage: -20V Drain current: -15A On-state resistance: 14mΩ Type of transistor: P-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 125nC Kind of channel: enhanced Gate-source voltage: ±10V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2005UFG-7 | Diodes Zetex | Trans MOSFET P-CH 20V 19A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2005UFG-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 1350 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2005UFG-7 | Diodes Inc | Trans MOSFET P-CH 20V 19A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2005UFG-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 89A POWERDI3333 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2005UFG-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -100A; 2.2W Kind of package: reel; tape Mounting: SMD Case: PowerDI3333-8 Pulsed drain current: -100A Drain-source voltage: -20V Drain current: -15A On-state resistance: 14mΩ Type of transistor: P-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 125nC Kind of channel: enhanced Gate-source voltage: ±10V Anzahl je Verpackung: 2000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2006UFG | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2006UFG-13 | Diodes Inc | Trans MOSFET P-CH 20V 17.5A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2006UFG-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 17.5A POWERDI | auf Bestellung 84000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DMP2006UFG-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W Kind of package: reel; tape Mounting: SMD Case: PowerDI®3333-8 Pulsed drain current: -80A Drain-source voltage: -20V Drain current: -14A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 200nC Kind of channel: enhanced Gate-source voltage: ±10V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2006UFG-13 | Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 10Vgss 5404pF 64nC | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2006UFG-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W Kind of package: reel; tape Mounting: SMD Case: PowerDI®3333-8 Pulsed drain current: -80A Drain-source voltage: -20V Drain current: -14A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 200nC Kind of channel: enhanced Gate-source voltage: ±10V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2006UFG-13 | Diodes Zetex | Trans MOSFET P-CH 20V 17.5A 8-Pin PowerDI EP T/R | auf Bestellung 84000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2006UFG-7 | Diodes Inc | Trans MOSFET P-CH 20V 17.5A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2006UFG-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 17.5A POWERDI Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 4.5V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5404 pF @ 10 V | auf Bestellung 154000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DMP2006UFG-7 | Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 10Vgss 5404pF 64nC | auf Bestellung 463 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2006UFG-7 | Diodes Zetex | Trans MOSFET P-CH 20V 17.5A 8-Pin PowerDI EP T/R | auf Bestellung 154000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2006UFGQ-13 | Diodes Zetex | Trans MOSFET P-CH 20V 17.5A Automotive 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2006UFGQ-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W Kind of package: reel; tape Mounting: SMD Case: PowerDI3333-8 Pulsed drain current: -80A Drain-source voltage: -20V Drain current: -14A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 200nC Kind of channel: enhanced Gate-source voltage: ±10V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2006UFGQ-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W Kind of package: reel; tape Mounting: SMD Case: PowerDI3333-8 Pulsed drain current: -80A Drain-source voltage: -20V Drain current: -14A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 200nC Kind of channel: enhanced Gate-source voltage: ±10V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2006UFGQ-13 | Diodes Inc | Trans MOSFET P-CH 20V 17.5A Automotive 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2006UFGQ-13 | Diodes Incorporated | Description: MOSFET P-CH 20V PWRDI3333 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2006UFGQ-13 | Diodes Incorporated | MOSFET 20V P-CH Enhance Mode | auf Bestellung 3000 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2006UFGQ-7 | Diodes Inc | Trans MOSFET P-CH 20V 17.5A Automotive 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2006UFGQ-7 | Diodes Incorporated | Description: MOSFET P-CH 20V PWRDI3333 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2006UFGQ-7 | Diodes Incorporated | MOSFET 20V P-CH MOSFET | auf Bestellung 1998 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2006UFGQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 17.5A Automotive 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2006UFGQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W Kind of package: reel; tape Mounting: SMD Case: PowerDI3333-8 Pulsed drain current: -80A Drain-source voltage: -20V Drain current: -14A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 200nC Kind of channel: enhanced Gate-source voltage: ±10V Anzahl je Verpackung: 2000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2006UFGQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W Kind of package: reel; tape Mounting: SMD Case: PowerDI3333-8 Pulsed drain current: -80A Drain-source voltage: -20V Drain current: -14A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 200nC Kind of channel: enhanced Gate-source voltage: ±10V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2007UFG-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W Kind of package: reel; tape Mounting: SMD Case: PowerDI3333-8 Pulsed drain current: -80A Drain-source voltage: -20V Drain current: -14.5A On-state resistance: 9mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 85nC Kind of channel: enhanced Gate-source voltage: ±12V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2007UFG-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W Kind of package: reel; tape Mounting: SMD Case: PowerDI3333-8 Pulsed drain current: -80A Drain-source voltage: -20V Drain current: -14.5A On-state resistance: 9mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 85nC Kind of channel: enhanced Gate-source voltage: ±12V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2007UFG-13 | Diodes Inc | Trans MOSFET P-CH 20V 18A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2007UFG-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 18A PWRDI3333-8 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2007UFG-13 | Diodes Incorporated | MOSFET 20V P-Ch Enh FET 12Vgss 29nC | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2007UFG-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W Kind of package: reel; tape Mounting: SMD Case: PowerDI3333-8 Pulsed drain current: -80A Drain-source voltage: -20V Drain current: -14.5A On-state resistance: 9mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 85nC Kind of channel: enhanced Gate-source voltage: ±12V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2007UFG-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 18A PWRDI3333 | auf Bestellung 3682 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2007UFG-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 18A PWRDI3333 | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2007UFG-7 | Diodes Incorporated | MOSFET 20V P-Ch Enh FET 12Vgss 29nC | auf Bestellung 5952 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2007UFG-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W Kind of package: reel; tape Mounting: SMD Case: PowerDI3333-8 Pulsed drain current: -80A Drain-source voltage: -20V Drain current: -14.5A On-state resistance: 9mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 85nC Kind of channel: enhanced Gate-source voltage: ±12V Anzahl je Verpackung: 2000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2008UFG-13 | Diodes Incorporated | MOSFET 20V P-CH MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2008UFG-13 | Diodes Zetex | Trans MOSFET P-CH 20V 14A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2008UFG-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 14A PWRDI3333 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2008UFG-13 | Diodes Inc | Trans MOSFET P-CH 20V 14A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2008UFG-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -80A; 2.4W Kind of package: reel; tape Mounting: SMD Case: PowerDI3333-8 Pulsed drain current: -80A Drain-source voltage: -20V Drain current: -11A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 2.4W Polarisation: unipolar Gate charge: 72nC Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2008UFG-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -80A; 2.4W Kind of package: reel; tape Mounting: SMD Case: PowerDI3333-8 Pulsed drain current: -80A Drain-source voltage: -20V Drain current: -11A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 2.4W Polarisation: unipolar Gate charge: 72nC Kind of channel: enhanced Gate-source voltage: ±8V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2008UFG-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 14A PWRDI3333 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2008UFG-13 | Diodes Zetex | Trans MOSFET P-CH 20V 14A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2008UFG-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -80A; 2.4W Kind of package: reel; tape Mounting: SMD Case: PowerDI®3333-8 Pulsed drain current: -80A Drain-source voltage: -20V Drain current: -11A On-state resistance: 8mΩ Type of transistor: P-MOSFET Power dissipation: 2.4W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 2000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2008UFG-7 | Diodes Zetex | Trans MOSFET P-CH 20V 14A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2008UFG-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -80A; 2.4W Kind of package: reel; tape Mounting: SMD Case: PowerDI®3333-8 Pulsed drain current: -80A Drain-source voltage: -20V Drain current: -11A On-state resistance: 8mΩ Type of transistor: P-MOSFET Power dissipation: 2.4W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±8V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2008UFG-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 14A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 4.5V Power Dissipation (Max): 2.4W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6909 pF @ 10 V | auf Bestellung 2888 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2008UFG-7 | Diodes Zetex | Trans MOSFET P-CH 20V 14A 8-Pin PowerDI EP T/R | auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2008UFG-7 | Diodes Incorporated | MOSFET 20V P-CH MOSFET | auf Bestellung 28794 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2008UFG-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 14A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 4.5V Power Dissipation (Max): 2.4W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6909 pF @ 10 V | auf Bestellung 600 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DMP2008UFG-7 | Diodes Inc | Trans MOSFET P-CH 20V 14A 8-Pin PowerDI EP T/R | auf Bestellung 52000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2008USS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V 24V SO-8 T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2010UFG-13 | Diodes Inc | 20V P-CHANNEL ENHANCEMENT MODE MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2010UFG-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -12.7A; Idm: -80A; 2.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -12.7A Pulsed drain current: -80A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±10V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 103nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2010UFG-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -12.7A; Idm: -80A; 2.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -12.7A Pulsed drain current: -80A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±10V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 103nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2010UFG-13 | Diodes Incorporated | MOSFET 20V P-Ch Enh FET 10Vgss -80A Idm | auf Bestellung 12000 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2010UFG-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 12.7A | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2010UFG-7 | Diodes Inc | 20V P-CHANNEL ENHANCEMENT MODE MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2010UFG-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 12.7A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 3.6A, 4.5V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 10 V | auf Bestellung 9487 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2010UFG-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -12.7A; Idm: -80A; 2.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -12.7A Pulsed drain current: -80A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±10V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 103nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2010UFG-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -12.7A; Idm: -80A; 2.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -12.7A Pulsed drain current: -80A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±10V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 103nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2010UFG-7 | Diodes Incorporated | MOSFET 20V P-Ch Enh FET 10Vgss -80A Idm | auf Bestellung 1590 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2010UFG-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 12.7A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 3.6A, 4.5V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 10 V | auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2010UFV-13 | Diodes Incorporated | MOSFET MOSFETBVDSS: 8V-24V | auf Bestellung 8508 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2010UFV-13 | Diodes Inc | Trans MOSFET P-CH 20V 50A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2010UFV-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -40A; Idm: -80A; 2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -40A Pulsed drain current: -80A Power dissipation: 2W Case: PowerDI3333-8 Gate-source voltage: ±10V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 103nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2010UFV-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -40A; Idm: -80A; 2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -40A Pulsed drain current: -80A Power dissipation: 2W Case: PowerDI3333-8 Gate-source voltage: ±10V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 103nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2010UFV-7 | Diodes Inc | Trans MOSFET P-CH 20V 50A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2010UFV-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -40A; Idm: -80A; 2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -40A Pulsed drain current: -80A Power dissipation: 2W Case: PowerDI3333-8 Gate-source voltage: ±10V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 103nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2010UFV-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -40A; Idm: -80A; 2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -40A Pulsed drain current: -80A Power dissipation: 2W Case: PowerDI3333-8 Gate-source voltage: ±10V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 103nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2010UFV-7 | Diodes Incorporated | MOSFET MOSFETBVDSS: 8V-24V | auf Bestellung 1 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2010UFV-7 | Diodes Zetex | Trans MOSFET P-CH 20V 50A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2012SN | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| DMP2012SN-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -900mA; Idm: -2.8A; 500mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.9A Pulsed drain current: -2.8A Power dissipation: 0.5W Case: SC59 Gate-source voltage: ±12V On-state resistance: 0.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2012SN-7 | Diodes Incorporated | MOSFET 20V 700mA | auf Bestellung 5586 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2012SN-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 700MA SC59-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V Power Dissipation (Max): 500mW Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SC-59-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 178.5 pF @ 10 V | auf Bestellung 95008 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2012SN-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -900mA; Idm: -2.8A; 500mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.9A Pulsed drain current: -2.8A Power dissipation: 0.5W Case: SC59 Gate-source voltage: ±12V On-state resistance: 0.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2012SN-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 700MA SC59-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V Power Dissipation (Max): 500mW Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SC-59-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 178.5 pF @ 10 V | auf Bestellung 93000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2012SN-7 | Diodes Inc | Trans MOSFET P-CH 20V 0.7A 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2016UFDF-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2016UFDF-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V U-DFN2020-6 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2016UFDF-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 3K | auf Bestellung 1541 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2016UFDF-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V U-DFN2020-6 | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2018LFK-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -10.3A; Idm: -90A; 1.3W Kind of package: reel; tape Mounting: SMD Case: U-DFN2523-6 Pulsed drain current: -90A Drain-source voltage: -20V Drain current: -10.3A On-state resistance: 25mΩ Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Gate charge: 113nC Kind of channel: enhanced Gate-source voltage: ±12V Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2018LFK-13 | Diodes Zetex | Trans MOSFET P-CH 20V 9.2A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2018LFK-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -10.3A; Idm: -90A; 1.3W Kind of package: reel; tape Mounting: SMD Case: U-DFN2523-6 Pulsed drain current: -90A Drain-source voltage: -20V Drain current: -10.3A On-state resistance: 25mΩ Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Gate charge: 113nC Kind of channel: enhanced Gate-source voltage: ±12V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2018LFK-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2523-6 T&R 3K | auf Bestellung 144224 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2018LFK-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 9.2A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 3.6A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 200µA Supplier Device Package: U-DFN2523-6 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4748 pF @ 10 V | auf Bestellung 35250 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2018LFK-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 9.2A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 3.6A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 200µA Supplier Device Package: U-DFN2523-6 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4748 pF @ 10 V | auf Bestellung 35438 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2021UFDE-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 11.1A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2021UFDE-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.2W Kind of package: reel; tape Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: -60A Drain-source voltage: -20V Drain current: -8.9A On-state resistance: 80mΩ Type of transistor: P-MOSFET Power dissipation: 1.2W Polarisation: unipolar Gate charge: 59nC Kind of channel: enhanced Gate-source voltage: ±10V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2021UFDE-13 | Diodes Inc | P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2021UFDE-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2021UFDE-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.2W Kind of package: reel; tape Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: -60A Drain-source voltage: -20V Drain current: -8.9A On-state resistance: 80mΩ Type of transistor: P-MOSFET Power dissipation: 1.2W Polarisation: unipolar Gate charge: 59nC Kind of channel: enhanced Gate-source voltage: ±10V Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2021UFDE-7 | Diodes Inc | P-CHANNEL ENHANCEMENT MODE MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2021UFDE-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K | auf Bestellung 4579 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2021UFDE-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.2W Kind of package: reel; tape Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: -60A Drain-source voltage: -20V Drain current: -8.9A On-state resistance: 80mΩ Type of transistor: P-MOSFET Power dissipation: 1.2W Polarisation: unipolar Gate charge: 59nC Kind of channel: enhanced Gate-source voltage: ±10V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2021UFDE-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 11.1A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V | auf Bestellung 43508 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2021UFDE-7 | Diodes Zetex | P-CHANNEL ENHANCEMENT MODE MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2021UFDE-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 11.1A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V | auf Bestellung 42000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2021UFDE-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.2W Kind of package: reel; tape Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: -60A Drain-source voltage: -20V Drain current: -8.9A On-state resistance: 80mΩ Type of transistor: P-MOSFET Power dissipation: 1.2W Polarisation: unipolar Gate charge: 59nC Kind of channel: enhanced Gate-source voltage: ±10V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2021UFDF-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 9A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V Power Dissipation (Max): 730mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2021UFDF-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.3W Kind of package: reel; tape Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: -60A Drain-source voltage: -20V Drain current: -8.9A On-state resistance: 80mΩ Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Gate charge: 59nC Kind of channel: enhanced Gate-source voltage: ±8V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2021UFDF-13 | Diodes Inc | Trans MOSFET P-CH 20V 9A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2021UFDF-13 | Diodes Incorporated | MOSFET P-Ch -20V Enh FET 8Vgss 0.73W 2760pF | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2021UFDF-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.3W Kind of package: reel; tape Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: -60A Drain-source voltage: -20V Drain current: -8.9A On-state resistance: 80mΩ Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Gate charge: 59nC Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2021UFDF-7 | Diodes Zetex | Trans MOSFET P-CH 20V 9A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2021UFDF-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; Idm: -60A; 0.47W Kind of package: reel; tape Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: -60A Drain-source voltage: -20V Drain current: -7.2A On-state resistance: 80mΩ Type of transistor: P-MOSFET Power dissipation: 0.47W Polarisation: unipolar Gate charge: 59nC Kind of channel: enhanced Gate-source voltage: ±8V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2021UFDF-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 9A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V Power Dissipation (Max): 730mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V | auf Bestellung 55392 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2021UFDF-7 | Diodes Inc | Trans MOSFET P-CH 20V 9A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2021UFDF-7 | Diodes Incorporated | MOSFET P-Ch -20V Enh FET 8Vgss 0.73W 2760pF | auf Bestellung 4048 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2021UFDF-7 | Diodes Zetex | Trans MOSFET P-CH 20V 9A 6-Pin UDFN EP T/R | auf Bestellung 2102 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2021UFDF-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; Idm: -60A; 0.47W Kind of package: reel; tape Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: -60A Drain-source voltage: -20V Drain current: -7.2A On-state resistance: 80mΩ Type of transistor: P-MOSFET Power dissipation: 0.47W Polarisation: unipolar Gate charge: 59nC Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2021UFDF-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 9A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V Power Dissipation (Max): 730mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V | auf Bestellung 51000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2021UTS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 3966 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2021UTS-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.9A; Idm: -55A; 1.3W; TSSOP8 Kind of package: reel; tape Mounting: SMD Case: TSSOP8 Pulsed drain current: -55A Drain-source voltage: -20V Drain current: -5.9A On-state resistance: 40mΩ Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Gate charge: 59nC Kind of channel: enhanced Gate-source voltage: ±10V Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2021UTS-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 18A 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-TSSOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V | auf Bestellung 12480 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2021UTS-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.9A; Idm: -55A; 1.3W; TSSOP8 Kind of package: reel; tape Mounting: SMD Case: TSSOP8 Pulsed drain current: -55A Drain-source voltage: -20V Drain current: -5.9A On-state resistance: 40mΩ Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Gate charge: 59nC Kind of channel: enhanced Gate-source voltage: ±10V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2021UTS-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 18A 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-TSSOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2021UTS-13 | Diodes Inc | Trans MOSFET P-CH 20V 7.4A 8-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2021UTSQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V 24V TSSOP-8 T&R Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 150000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2021UTSQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2021UTSQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V 24V TSSOP-8 T&R Packaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 150000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2022LSS-13 | Diodes Incorporated | MOSFET PMOS SINGLE P-CHANNL 20V 10A | auf Bestellung 3244 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2022LSS-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 10A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 56.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2444 pF @ 10 V | auf Bestellung 32500 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2022LSS-13 | Diodes Zetex | Trans MOSFET P-CH 20V 10A 8-Pin SOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2022LSS-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8 Kind of package: reel; tape Mounting: SMD Case: SO8 Drain-source voltage: -20V Drain current: -8A On-state resistance: 13mΩ Type of transistor: P-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±12V | auf Bestellung 1564 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2022LSS-13 | Diodes Inc | Trans MOSFET P-CH 20V 10A 8-Pin SOP T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2022LSS-13 | Diodes Zetex | Trans MOSFET P-CH 20V 10A 8-Pin SOP T/R | auf Bestellung 2079 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2022LSS-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8 Kind of package: reel; tape Mounting: SMD Case: SO8 Drain-source voltage: -20V Drain current: -8A On-state resistance: 13mΩ Type of transistor: P-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±12V Anzahl je Verpackung: 1 Stücke | auf Bestellung 1564 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP2022LSS-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 10A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 56.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2444 pF @ 10 V | auf Bestellung 37712 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2022LSSQ-13 | Diodes Inc | Trans MOSFET P-CH 20V 9.3A Automotive 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2022LSSQ-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7.4A; Idm: -35A; 1.6W; SO8 Kind of package: reel; tape Mounting: SMD Case: SO8 Pulsed drain current: -35A Drain-source voltage: -20V Drain current: -7.4A On-state resistance: 22mΩ Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Gate charge: 60.2nC Kind of channel: enhanced Gate-source voltage: ±12V Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2022LSSQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: | auf Bestellung 2284 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2022LSSQ-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7.4A; Idm: -35A; 1.6W; SO8 Kind of package: reel; tape Mounting: SMD Case: SO8 Pulsed drain current: -35A Drain-source voltage: -20V Drain current: -7.4A On-state resistance: 22mΩ Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Gate charge: 60.2nC Kind of channel: enhanced Gate-source voltage: ±12V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2023UFDF | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2023UFDF-13 | Diodes Incorporated | MOSFET 20V P-Ch Enh FET 8Vgss -7.6A ID 0.7W | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2023UFDF-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 7.6A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 4.5V Power Dissipation (Max): 730mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1837 pF @ 15 V | auf Bestellung 230000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2023UFDF-13 | Diodes Zetex | Trans MOSFET P-CH 20V 7.6A 6-Pin UDFN EP T/R | auf Bestellung 230000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2023UFDF-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7.6A; Idm: -40A; 1.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -7.6A Pulsed drain current: -40A Power dissipation: 1.3W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 90mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2023UFDF-13 | Diodes Inc | Trans MOSFET P-CH 20V 7.6A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2023UFDF-13 | Diodes Zetex | Trans MOSFET P-CH 20V 7.6A 6-Pin UDFN EP T/R | auf Bestellung 230000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2023UFDF-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7.6A; Idm: -40A; 1.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -7.6A Pulsed drain current: -40A Power dissipation: 1.3W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 90mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2023UFDF-7 | Diodes Zetex | Trans MOSFET P-CH 20V 7.6A 6-Pin UDFN EP T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2023UFDF-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 7.6A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 4.5V Power Dissipation (Max): 730mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1837 pF @ 15 V | auf Bestellung 126434 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2023UFDF-7 | Diodes Zetex | Trans MOSFET P-CH 20V 7.6A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2023UFDF-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 0.73W; U-DFN2020-6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.9A Power dissipation: 0.73W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 90mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2023UFDF-7 | Diodes Zetex | Trans MOSFET P-CH 20V 7.6A 6-Pin UDFN EP T/R | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2023UFDF-7 | Diodes Inc | Trans MOSFET P-CH 20V 7.6A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2023UFDF-7 | Diodes Zetex | Trans MOSFET P-CH 20V 7.6A 6-Pin UDFN EP T/R | auf Bestellung 153000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2023UFDF-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 0.73W; U-DFN2020-6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.9A Power dissipation: 0.73W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 90mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2023UFDF-7 | DIODES INC. | Description: DIODES INC. - DMP2023UFDF-7 - Leistungs-MOSFET, p-Kanal, 20 V, 7.6 A, 0.027 ohm, UDFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 7.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 730mW Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 730mW Bauform - Transistor: UDFN2020 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 6Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.027ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.027ohm | auf Bestellung 1125 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2023UFDF-7 | Diodes Incorporated | MOSFET 20V P-Ch Enh FET 8Vgss -7.6A ID 0.7W | auf Bestellung 2400 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2023UFDF-7 | Diodes Zetex | Trans MOSFET P-CH 20V 7.6A 6-Pin UDFN EP T/R | auf Bestellung 141000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2023UFDF-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 7.6A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 4.5V Power Dissipation (Max): 730mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1837 pF @ 15 V | auf Bestellung 123000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2023UFDF-7 | Diodes Zetex | Trans MOSFET P-CH 20V 7.6A 6-Pin UDFN EP T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2023UFDF-7 | Diodes Zetex | Trans MOSFET P-CH 20V 7.6A 6-Pin UDFN EP T/R | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2023UFDF-7 | DIODES INC. | Description: DIODES INC. - DMP2023UFDF-7 - Leistungs-MOSFET, p-Kanal, 20 V, 7.6 A, 0.027 ohm, UDFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 7.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 730mW Bauform - Transistor: UDFN2020 Anzahl der Pins: 6Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.027ohm | auf Bestellung 1125 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2033UCB9-7 | Diodes Incorporated | MOSFET P-Ch Enh Mode FET 33mOhm -20V -5.8A | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2033UCB9-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.2A U-WLB1515-9 Packaging: Cut Tape (CT) Package / Case: 9-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 2A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-WLB1515-9 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V | auf Bestellung 5716 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2033UCB9-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.2A U-WLB1515-9 Packaging: Tape & Reel (TR) Package / Case: 9-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 2A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-WLB1515-9 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2033UCB9-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.2A U-WLB1515-9 Packaging: Tape & Reel (TR) Package / Case: 9-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 2A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-WLB1515-9 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2033UCB9-7 | Diodes Inc | Trans MOSFET P-CH 20V 5.8A 9-Pin U-WLB T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2033UVT-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.2A TSOT-26 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2033UVT-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26 Kind of package: reel; tape Mounting: SMD Case: TSOT26 Pulsed drain current: -10A Drain-source voltage: -20V Drain current: -3.4A On-state resistance: 0.2Ω Type of transistor: P-MOSFET Power dissipation: 1.7W Polarisation: unipolar Gate charge: 10.4nC Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2033UVT-13 | Diodes Inc | Trans MOSFET P-CH 20V 4.2A 6-Pin TSOT-26 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2033UVT-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26 Kind of package: reel; tape Mounting: SMD Case: TSOT26 Pulsed drain current: -10A Drain-source voltage: -20V Drain current: -3.4A On-state resistance: 0.2Ω Type of transistor: P-MOSFET Power dissipation: 1.7W Polarisation: unipolar Gate charge: 10.4nC Kind of channel: enhanced Gate-source voltage: ±8V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2033UVT-13 | Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 8Vgss 845pF 10.4nC | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2033UVT-7 | Diodes Inc | Trans MOSFET P-CH 20V 4.2A 6-Pin TSOT-26 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2033UVT-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26 Kind of package: reel; tape Mounting: SMD Case: TSOT26 Pulsed drain current: -10A Drain-source voltage: -20V Drain current: -3.4A On-state resistance: 0.2Ω Type of transistor: P-MOSFET Power dissipation: 1.7W Polarisation: unipolar Gate charge: 10.4nC Kind of channel: enhanced Gate-source voltage: ±8V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2033UVT-7 | Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 8Vgss 845pF 10.4nC | auf Bestellung 2975 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2033UVT-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.2A TSOT-26 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2033UVT-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26 Kind of package: reel; tape Mounting: SMD Case: TSOT26 Pulsed drain current: -10A Drain-source voltage: -20V Drain current: -3.4A On-state resistance: 0.2Ω Type of transistor: P-MOSFET Power dissipation: 1.7W Polarisation: unipolar Gate charge: 10.4nC Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035U | DIODES INC. | Description: DIODES INC. - DMP2035U - Leistungs-MOSFET, Anreicherungstyp, p-Kanal, 20 V, 3.6 A, 0.023 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 3.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 700mV euEccn: NLR Verlustleistung: 810mW Anzahl der Pins: 3Pins Produktpalette: - productTraceability: No Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.023ohm | auf Bestellung 26839 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2035U | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035U | DIODES INC. | Description: DIODES INC. - DMP2035U - Leistungs-MOSFET, Anreicherungstyp, p-Kanal, 20 V, 3.6 A, 0.023 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 3.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 700mV euEccn: NLR Verlustleistung: 810mW Anzahl der Pins: 3Pins Produktpalette: - productTraceability: No Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.023ohm | auf Bestellung 26839 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2035U | ams OSRAM | ams OSRAM | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035U-13 | Diodes Zetex | Trans MOSFET P-CH 20V 4.9A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.9A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035U-7 | Diodes Incorporated | MOSFET MOSFET P-CHANNEL SOT-23 | auf Bestellung 131130 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2035U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.9A 3-Pin SOT-23 T/R | auf Bestellung 188 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2035U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.9A 3-Pin SOT-23 T/R | auf Bestellung 2460000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2035U-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 3.6A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Power Dissipation (Max): 810mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 10 V | auf Bestellung 2916000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2035U-7 | Diodes Inc | Trans MOSFET P-CH 20V 4.9A 3-Pin SOT-23 T/R | auf Bestellung 188 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2035U-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23 Kind of package: reel; tape Mounting: SMD Case: SOT23 Drain-source voltage: -20V Drain current: -2.9A On-state resistance: 62mΩ Type of transistor: P-MOSFET Power dissipation: 0.81W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 5 Stücke | auf Bestellung 5514 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP2035U-7 | DIODES INC. | Description: DIODES INC. - DMP2035U-7 - Leistungs-MOSFET, p-Kanal, 20 V, 3.6 A, 0.023 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 3.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 700mV euEccn: NLR Verlustleistung: 810mW Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.023ohm | auf Bestellung 16205 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2035U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.9A 3-Pin SOT-23 T/R | auf Bestellung 2460000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2035U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.9A 3-Pin SOT-23 T/R | auf Bestellung 2648 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2035U-7 Produktcode: 198292 | Transistoren > Transistoren P-Kanal-Feld | Produkt ist nicht verfügbar | ||||||||||||||||||
| DMP2035U-7 | DIODES INC. | Description: DIODES INC. - DMP2035U-7 - Leistungs-MOSFET, p-Kanal, 20 V, 3.6 A, 0.023 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 3.6A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 700mV euEccn: NLR Verlustleistung: 810mW Anzahl der Pins: 3Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.023ohm | auf Bestellung 54000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2035U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.9A 3-Pin SOT-23 T/R | auf Bestellung 2648 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2035U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.9A 3-Pin SOT-23 T/R | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2035U-7 | Diodes Inc | Trans MOSFET P-CH 20V 4.9A 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2035U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.9A 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2035U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.9A 3-Pin SOT-23 T/R | auf Bestellung 2937000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2035U-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 3.6A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Power Dissipation (Max): 810mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 10 V | auf Bestellung 2920694 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2035U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.9A 3-Pin SOT-23 T/R | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2035U-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23 Kind of package: reel; tape Mounting: SMD Case: SOT23 Drain-source voltage: -20V Drain current: -2.9A On-state resistance: 62mΩ Type of transistor: P-MOSFET Power dissipation: 0.81W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V | auf Bestellung 5514 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2035U-7 | DIODES/ZETEX | P-MOSFET 20V 3.6A 35mΩ 810mW DMP2035U-7 Diodes TDMP2035u Anzahl je Verpackung: 100 Stücke | auf Bestellung 398 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP2035U-7 | DIODES INC. | Description: DIODES INC. - DMP2035U-7 - Leistungs-MOSFET, p-Kanal, 20 V, 3.6 A, 0.023 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 3.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Verlustleistung Pd: 810mW Gate-Source-Schwellenspannung, max.: 700mV euEccn: NLR Verlustleistung: 810mW Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Betriebswiderstand, Rds(on): 0.023ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.023ohm | auf Bestellung 16205 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2035U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.9A 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2035U-7-F | DIODES/CJ | 11+ SOT-23 | auf Bestellung 129211 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DMP2035UFCL-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.3A; Idm: -40A; 1.6W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.3A Pulsed drain current: -40A Power dissipation: 1.6W Case: U-DFN1616-6 Gate-source voltage: ±8V On-state resistance: 45mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UFCL-7 | Diodes Zetex | Trans MOSFET P-CH 20V 6.6A 6-Pin UDFN EP T/R | auf Bestellung 180000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2035UFCL-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 6.6A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 4.5V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN1616-6 (Type K) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V | auf Bestellung 189000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2035UFCL-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.3A; Idm: -40A; 1.6W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.3A Pulsed drain current: -40A Power dissipation: 1.6W Case: U-DFN1616-6 Gate-source voltage: ±8V On-state resistance: 45mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UFCL-7 | Diodes Incorporated | MOSFET 20V P-Ch Enh FET 8Vgss -20Vdss -40A | auf Bestellung 4658 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2035UFCL-7 | Diodes Inc | Trans MOSFET P-CH 20V 6.6A T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UFCL-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 6.6A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 4.5V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN1616-6 (Type K) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V | auf Bestellung 192527 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2035UFDF-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6.5A Pulsed drain current: -40A Power dissipation: 1.31W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 20.5nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UFDF-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UFDF-13 | Diodes Inc | Trans MOSFET P-CH 20V 6.9A T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UFDF-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 8.1A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V Power Dissipation (Max): 2.03W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2035UFDF-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6.5A Pulsed drain current: -40A Power dissipation: 1.31W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 20.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UFDF-13 | Diodes Zetex | Trans MOSFET P-CH 20V 6.9A 6-Pin UDFN EP T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2035UFDF-7 | Diodes Inc | Trans MOSFET P-CH 20V 6.9A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UFDF-7 | DIODES INC. | Description: DIODES INC. - DMP2035UFDF-7 - Leistungs-MOSFET, p-Kanal, 20 V, 6.9 A, 0.02 ohm, UDFN2020, Oberflächenmontage tariffCode: 85412100 Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 6.9A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 660mW Anzahl der Pins: 6Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.02ohm | auf Bestellung 345 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2035UFDF-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 8.1A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V Power Dissipation (Max): 2.03W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V | auf Bestellung 267000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2035UFDF-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6.5A Pulsed drain current: -40A Power dissipation: 1.31W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 20.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UFDF-7 | Diodes Zetex | Trans MOSFET P-CH 20V 6.9A 6-Pin UDFN EP T/R | auf Bestellung 252000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2035UFDF-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6.5A Pulsed drain current: -40A Power dissipation: 1.31W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 20.5nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UFDF-7 | DIODES INC. | Description: DIODES INC. - DMP2035UFDF-7 - Leistungs-MOSFET, p-Kanal, 20 V, 6.9 A, 0.02 ohm, UDFN2020, Oberflächenmontage tariffCode: 85412100 Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 6.9A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 660mW Anzahl der Pins: 6Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.02ohm | auf Bestellung 345 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2035UFDF-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 8.1A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V Power Dissipation (Max): 2.03W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V | auf Bestellung 271411 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2035UFDF-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K | auf Bestellung 30454 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2035UQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.9A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -24A; 1.2W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -24A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 62mΩ Mounting: SMD Gate charge: 15.4nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Power Dissipation (Max): 810mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 27000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2035UQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V SOT23 T&R 3K | auf Bestellung 2935 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2035UQ-7 | Diodes Inc | Trans MOSFET P-CH 20V 4.9A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.9A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2035UQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -24A; 1.2W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -24A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 62mΩ Mounting: SMD Gate charge: 15.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UTS-13 | Diodes Incorporated | MOSFET MOSFET P-CHAN | auf Bestellung 2436 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2035UTS-13 | Diodes Inc | Trans MOSFET P-CH 20V 6.04A 8-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UTS-13 | DIODES INC. | Description: DIODES INC. - DMP2035UTS-13 - Dual-MOSFET, p-Kanal, 20 V, 20 V, 6.04 A, 6.04 A, 0.023 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 6.04A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 6.04A Drain-Source-Durchgangswiderstand, p-Kanal: 0.023ohm Verlustleistung, p-Kanal: 890mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: TSSOP Anzahl der Pins: 8Pins Produktpalette: PW Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.023ohm productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 890mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2149 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2035UTS-13 | Diodes Zetex | Trans MOSFET P-CH 20V 6.04A 8-Pin TSSOP T/R | auf Bestellung 2367 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2035UTS-13 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; 3.96A; Idm: 22A; 0.89W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: 3.96A Pulsed drain current: 22A Power dissipation: 0.89W Case: TSSOP8 Gate-source voltage: ±8V On-state resistance: 62mΩ Mounting: SMD Gate charge: 15.4nC Kind of package: reel; tape Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UTS-13 | Diodes Zetex | Trans MOSFET P-CH 20V 6.04A 8-Pin TSSOP T/R | auf Bestellung 22500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2035UTS-13 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 6.04A 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 890mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.04A Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 15.4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-TSSOP Part Status: Active | auf Bestellung 24211 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2035UTS-13 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; 3.96A; Idm: 22A; 0.89W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: 3.96A Pulsed drain current: 22A Power dissipation: 0.89W Case: TSSOP8 Gate-source voltage: ±8V On-state resistance: 62mΩ Mounting: SMD Gate charge: 15.4nC Kind of package: reel; tape Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UTS-13 | DIODES INC. | Description: DIODES INC. - DMP2035UTS-13 - Dual-MOSFET, p-Kanal, 20 V, 20 V, 6.04 A, 6.04 A, 0.023 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 6.04A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 6.04A Drain-Source-Durchgangswiderstand, p-Kanal: 0.023ohm Verlustleistung, p-Kanal: 890mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: TSSOP Anzahl der Pins: 8Pins Produktpalette: PW Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.023ohm productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 890mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2149 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2035UTS-13 | Diodes Zetex | Trans MOSFET P-CH 20V 6.04A 8-Pin TSSOP T/R | auf Bestellung 2367 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2035UTS-13 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 6.04A 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 890mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.04A Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 15.4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-TSSOP Part Status: Active | auf Bestellung 22500 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2035UVT-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.7A Pulsed drain current: -24A Power dissipation: 2W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 62mΩ Mounting: SMD Gate charge: 23.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UVT-13 | Diodes Zetex | Trans MOSFET P-CH 20V 6A 6-Pin TSOT-26 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UVT-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 7.2A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-26 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UVT-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.7A Pulsed drain current: -24A Power dissipation: 2W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 62mΩ Mounting: SMD Gate charge: 23.1nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UVT-13 | Diodes Inc | Trans MOSFET P-CH 20V 6A 6-Pin TSOT-26 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UVT-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.8A Power dissipation: 1.2W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 62mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | auf Bestellung 5084 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2035UVT-7 | Diodes Zetex | Trans MOSFET P-CH 20V 6A 6-Pin TSOT-26 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2035UVT-7 | DIODES INC. | Description: DIODES INC. - DMP2035UVT-7 - Leistungs-MOSFET, p-Kanal, 20 V, 6 A, 0.023 ohm, TSOT, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 700mV euEccn: NLR Verlustleistung: 1.2W Bauform - Transistor: TSOT Anzahl der Pins: 6Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.023ohm | auf Bestellung 1710 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2035UVT-7 | Diodes Zetex | Trans MOSFET P-CH 20V 6A 6-Pin TSOT-26 T/R | auf Bestellung 2473 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2035UVT-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 6A TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 10 V | auf Bestellung 1156764 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2035UVT-7 | Diodes Inc | Trans MOSFET P-CH 20V 6A 6-Pin TSOT-26 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2035UVT-7 | Diodes Zetex | Trans MOSFET P-CH 20V 6A 6-Pin TSOT-26 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2035UVT-7 | DIODES INC. | Description: DIODES INC. - DMP2035UVT-7 - Leistungs-MOSFET, p-Kanal, 20 V, 6 A, 0.023 ohm, TSOT, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 700mV euEccn: NLR Verlustleistung: 1.2W Bauform - Transistor: TSOT Anzahl der Pins: 6Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.023ohm | auf Bestellung 1710 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2035UVT-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.8A Power dissipation: 1.2W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 62mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke | auf Bestellung 5084 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP2035UVT-7 | Diodes Zetex | Trans MOSFET P-CH 20V 6A 6-Pin TSOT-26 T/R | auf Bestellung 1137000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2035UVT-7 | Diodes Zetex | Trans MOSFET P-CH 20V 6A 6-Pin TSOT-26 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UVT-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 6A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 10 V | auf Bestellung 1152000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2035UVT-7 | Diodes Incorporated | MOSFET P-Ch -20V ENH Mode 35mOhm -4.5V -6.0A | auf Bestellung 12409 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2035UVT-7 | Diodes Zetex | Trans MOSFET P-CH 20V 6A 6-Pin TSOT-26 T/R | auf Bestellung 2473 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2035UVTQ-13 | Diodes Inc | Trans MOSFET P-CH 20V 6A Automotive 6-Pin TSOT-26 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UVTQ-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.7A Pulsed drain current: -24A Power dissipation: 2W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 62mΩ Mounting: SMD Gate charge: 23.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UVTQ-13 | Diodes Zetex | Trans MOSFET P-CH 20V 6A Automotive AEC-Q101 6-Pin TSOT-26 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UVTQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 9895 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2035UVTQ-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 7.2A TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-23-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 10 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UVTQ-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.7A Pulsed drain current: -24A Power dissipation: 2W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 62mΩ Mounting: SMD Gate charge: 23.1nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UVTQ-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 7.2A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-23-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 10 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UVTQ-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 7.2A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-23-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 63000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2035UVTQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.7A Pulsed drain current: -24A Power dissipation: 2W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 62mΩ Mounting: SMD Gate charge: 23.1nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UVTQ-7 | Diodes Inc | Trans MOSFET P-CH 20V 6A Automotive 6-Pin TSOT-26 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UVTQ-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 7.2A TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-23-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 65559 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2035UVTQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.7A Pulsed drain current: -24A Power dissipation: 2W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 62mΩ Mounting: SMD Gate charge: 23.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2035UVTQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 6A Automotive AEC-Q101 6-Pin TSOT-26 T/R | auf Bestellung 57000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2035UVTQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 7209 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2036UVT-13 | Diodes Inc | High Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2036UVT-13 | Diodes Incorporated | Description: MOSFET P-CH 20V TSOT26 Packaging: Tape & Reel (TR) Current - Continuous Drain (Id) @ 25°C: 6A (Ta) | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2036UVT-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26 Mounting: SMD Kind of package: reel; tape Gate charge: 20.5nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -40A Case: TSOT26 Drain-source voltage: -20V Drain current: -5A On-state resistance: 58mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2036UVT-13 | Diodes Zetex | High Enhancement Mode MOSFET | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2036UVT-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V~24V TSOT26 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2036UVT-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26 Mounting: SMD Kind of package: reel; tape Gate charge: 20.5nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -40A Case: TSOT26 Drain-source voltage: -20V Drain current: -5A On-state resistance: 58mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2036UVT-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26 Mounting: SMD Kind of package: reel; tape Gate charge: 20.5nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -40A Case: TSOT26 Drain-source voltage: -20V Drain current: -5A On-state resistance: 58mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2036UVT-7 | Diodes Zetex | High Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2036UVT-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V~24V TSOT26 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2036UVT-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26 Mounting: SMD Kind of package: reel; tape Gate charge: 20.5nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -40A Case: TSOT26 Drain-source voltage: -20V Drain current: -5A On-state resistance: 58mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2036UVT-7 | Diodes Inc | High Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2036UVT-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 6A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6.4A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2036UVTQ-13 | Diodes Zetex | MOSFET BVDSS: 8V24V TSOT26 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2036UVTQ-7 | Diodes Zetex | MOSFET BVDSS: 8V24V TSOT26 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2037U-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 1 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V Power Dissipation (Max): 800mW Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 803 pF @ 10 V | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2037U-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V~24V SOT23 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2037U-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; Idm: -38A; 1.6W; SOT23 Mounting: SMD Pulsed drain current: -38A Power dissipation: 1.6W Gate charge: 14.5nC Polarisation: unipolar Drain current: -4.8A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±10V Kind of package: reel; tape Case: SOT23 On-state resistance: 43mΩ | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2037U-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V Power Dissipation (Max): 800mW Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 803 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 81000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2037U-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V~24V SOT23 T&R 3K | auf Bestellung 5760 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2037U-7 | Diodes Inc | MOSFET BVDSS: 8V24V SOT23 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2037U-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; Idm: -38A; 1.6W; SOT23 Mounting: SMD Pulsed drain current: -38A Power dissipation: 1.6W Gate charge: 14.5nC Polarisation: unipolar Drain current: -4.8A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±10V Kind of package: reel; tape Case: SOT23 On-state resistance: 43mΩ Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2037UFCL-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V U-DFN1616-6 Packaging: Bulk Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: U-DFN1616-6 (Type K) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 806 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2037UFCL-7 | Diodes Zetex | P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2037UFCL-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V~24V U-DFN1616-6 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2038USS-13 | Diodes Inc | Trans MOSFET P-CH 20V 6.5A 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2038USS-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 6.5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1496 pF @ 15 V | auf Bestellung 35000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2038USS-13 | Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 8Vgss 1496pF 14.4nC | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2038USS-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 6.5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1496 pF @ 15 V | auf Bestellung 37572 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2039UFDE-7 | Diodes Zetex | Trans MOSFET P-CH 25V 6.7A 6-Pin DFN EP T/R | auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2039UFDE-7 | Diodes Incorporated | Description: MOSFET P-CH 25V 6.7A 6UDFN | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2039UFDE-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 U-DFN2020-6 T&R 3K | auf Bestellung 11941 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2039UFDE-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -25V; -5.4A; 0.8W; U-DFN2020-6 Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -25V Drain current: -5.4A On-state resistance: 40mΩ Type of transistor: P-MOSFET Power dissipation: 0.8W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2039UFDE-7 | Diodes Zetex | Trans MOSFET P-CH 25V 6.7A 6-Pin DFN EP T/R | auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2039UFDE-7 | Diodes Incorporated | Description: MOSFET P-CH 25V 6.7A 6UDFN | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2039UFDE-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -25V; -5.4A; 0.8W; U-DFN2020-6 Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -25V Drain current: -5.4A On-state resistance: 40mΩ Type of transistor: P-MOSFET Power dissipation: 0.8W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2039UFDE-7 | Diodes Inc | Trans MOSFET P-CH 25V 6.7A 6-Pin DFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2039UFDE4 | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2039UFDE4-7 Produktcode: 200462 | Transistoren > Transistoren P-Kanal-Feld | Produkt ist nicht verfügbar | ||||||||||||||||||
| DMP2039UFDE4-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -25V; -7.3A; Idm: -60A; 1.5W Case: X2-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -25V Drain current: -7.3A On-state resistance: 70mΩ Type of transistor: P-MOSFET Power dissipation: 1.5W Polarisation: unipolar Gate charge: 28.2nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -60A | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2039UFDE4-7 | Diodes Zetex | Trans MOSFET P-CH 25V 7.3A 6-Pin DFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2039UFDE4-7 | Diodes Incorporated | Description: MOSFET P-CH 25V 7.3A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-PowerXDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 6.4A, 4.5V Power Dissipation (Max): 690mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN2020-6 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 28.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 15 V | auf Bestellung 8990 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2039UFDE4-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 X2-DFN2020-6 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2039UFDE4-7 | DIODES INC. | Description: DIODES INC. - DMP2039UFDE4-7 - Leistungs-MOSFET, p-Kanal, 25 V, 7.3 A, 0.019 ohm, X2-DFN2020, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 25V rohsCompliant: YES Dauer-Drainstrom Id: 7.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 690mW Bauform - Transistor: X2-DFN2020 Anzahl der Pins: 6Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.019ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2039UFDE4-7 | Diodes Inc | Trans MOSFET P-CH 25V 7.3A 6-Pin DFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2039UFDE4-7 | Diodes Zetex | Trans MOSFET P-CH 25V 7.3A 6-Pin DFN EP T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2039UFDE4-7 | Diodes Incorporated | Description: MOSFET P-CH 25V 7.3A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerXDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 6.4A, 4.5V Power Dissipation (Max): 690mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN2020-6 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 28.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 15 V | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2039UFDE4-7 | DIODES INC. | Description: DIODES INC. - DMP2039UFDE4-7 - Leistungs-MOSFET, p-Kanal, 25 V, 7.3 A, 0.019 ohm, X2-DFN2020, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 25V rohsCompliant: YES Dauer-Drainstrom Id: 7.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 690mW Bauform - Transistor: X2-DFN2020 Anzahl der Pins: 6Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.019ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2039UFDE4-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -25V; -7.3A; Idm: -60A; 1.5W Case: X2-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -25V Drain current: -7.3A On-state resistance: 70mΩ Type of transistor: P-MOSFET Power dissipation: 1.5W Polarisation: unipolar Gate charge: 28.2nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -60A Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2040UFDF-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 1.8W Mounting: SMD Case: U-DFN2020-6 Kind of package: reel; tape Power dissipation: 1.8W Drain current: -4.9A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V On-state resistance: 53mΩ Pulsed drain current: -35A Gate charge: 19nC Polarisation: unipolar Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2040UFDF-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 1.8W Mounting: SMD Case: U-DFN2020-6 Kind of package: reel; tape Power dissipation: 1.8W Drain current: -4.9A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V On-state resistance: 53mΩ Pulsed drain current: -35A Gate charge: 19nC Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2040UFDF-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2040UFDF-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 0.8W Mounting: SMD Case: U-DFN2020-6 Kind of package: reel; tape Power dissipation: 0.8W Drain current: -4.9A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V On-state resistance: 53mΩ Pulsed drain current: -35A Gate charge: 19nC Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2040UFDF-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 13A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 8.9A, 4.5V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V | auf Bestellung 27000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2040UFDF-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K | auf Bestellung 2958 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2040UFDF-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 13A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 8.9A, 4.5V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V | auf Bestellung 27000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2040UFDF-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 0.8W Mounting: SMD Case: U-DFN2020-6 Kind of package: reel; tape Power dissipation: 0.8W Drain current: -4.9A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V On-state resistance: 53mΩ Pulsed drain current: -35A Gate charge: 19nC Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2040USD-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V-24V SO-8 T&R 2. | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2040USD-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V SO-8 T&R 2.5K | auf Bestellung 13820 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2040USD-13 | DIODES/ZETEX | Trans MOSFET P-CH 20V 6.5A 8-Pin SO DMP2040USD-13 TDMP2040USD-13 Anzahl je Verpackung: 50 Stücke | auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP2040USD-13 | DIODES INCORPORATED | DMP2040USD-13 SMD P channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2040USD-13 | Diodes Zetex | Trans MOSFET P-CH 20V 6.5A 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2040USS-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 7A/15A 8SO T&R 2 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 8.9A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V | auf Bestellung 1159158 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2040USS-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 7A/15A 8SO T&R 2 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 8.9A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V | auf Bestellung 1155000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2040USS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V 24V SO-8 T&R 2.5K | auf Bestellung 904 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2040USS-13 | DIODES INCORPORATED | DMP2040USS-13 SMD P channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2040USS-13 | Diodes Inc | Trans MOSFET P-CH 20V 7A 8-Pin SO T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2040UVT-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2040UVT-13 | DIODES INCORPORATED | DMP2040UVT-13 SMD P channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2040UVT-13 | Diodes Zetex | Trans MOSFET P-CH 20V 5.5A 6-Pin TSOT-26 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2040UVT-13 | Diodes Inc | Trans MOSFET P-CH 20V 5.5A 6-Pin TSOT-26 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2040UVT-7 | Diodes Inc | Trans MOSFET P-CH 20V 5.5A 6-Pin TSOT-26 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2040UVT-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 3870 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2040UVT-7 | DIODES INCORPORATED | DMP2040UVT-7 SMD P channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2040UVTQ-13 | Diodes Zetex | MOSFET BVDSS: 8V24V TSOT26 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2042UCB4-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 1719 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||
| DMP2042UCB4-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -16A; 1.4W Mounting: SMD Case: U-WLB1010-4 Kind of package: reel; tape Pulsed drain current: -16A Drain-source voltage: -20V Drain current: -3.7A On-state resistance: 65mΩ Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Gate charge: 2.5nC Kind of channel: enhanced Gate-source voltage: ±6V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2042UCB4-7 | Diodes Inc | Trans MOSFET P-CH 20V 4.6A 4-Pin U-WLB T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2042UCB4-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -16A; 1.4W Mounting: SMD Case: U-WLB1010-4 Kind of package: reel; tape Pulsed drain current: -16A Drain-source voltage: -20V Drain current: -3.7A On-state resistance: 65mΩ Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Gate charge: 2.5nC Kind of channel: enhanced Gate-source voltage: ±6V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2042UCP4-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V X1-DSN1010- Packaging: Cut Tape (CT) Package / Case: 4-XFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 1A, 4.5V Power Dissipation (Max): 860mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: X1-DSN1010-4 (Type C) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V | auf Bestellung 230960 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2042UCP4-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V X1-DSN1010- Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 1A, 4.5V Power Dissipation (Max): 860mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: X1-DSN1010-4 (Type C) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V | auf Bestellung 228000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2043UCA3-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 3553 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2043UCA3-7 | DIODES INCORPORATED | DMP2043UCA3-7 SMD P channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2043UCA3-7 | Diodes Inc | Trans MOSFET P-CH 20V 4.2A 3-Pin X2-DSN T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2043UCA3-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V-24V X2-DSN1010- | auf Bestellung 55000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DMP2045U-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.3A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2045U-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.3A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2045U-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.2W Polarisation: unipolar Gate charge: 6.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -25A Case: SOT23 Drain-source voltage: -20V Drain current: -3.5A On-state resistance: 90mΩ Type of transistor: P-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2045U-13 | Diodes Zetex | Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2045U-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2045U-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.2W Polarisation: unipolar Gate charge: 6.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -25A Case: SOT23 Drain-source voltage: -20V Drain current: -3.5A On-state resistance: 90mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2045U-13 | Diodes Inc | Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2045U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R | auf Bestellung 123000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2045U-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 0.8W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.1A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 90mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | auf Bestellung 5451 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2045U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2045U-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V 24V | auf Bestellung 247415 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2045U-7 | Diodes Incorporated | Транзистор: P-MOSFET, полевой, 24В, 4,3А, SOT23 | auf Bestellung 491 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2045U-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.3A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V | auf Bestellung 161625 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2045U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R | auf Bestellung 123000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2045U-7 | Diodes Inc | Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2045U-7 | DIODES INC. | Description: DIODES INC. - DMP2045U-7 - Leistungs-MOSFET, p-Kanal, 20 V, 4.3 A, 0.032 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20 rohsCompliant: YES Dauer-Drainstrom Id: 4.3 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 800 Gate-Source-Schwellenspannung, max.: 1 euEccn: NLR Verlustleistung: 800 Bauform - Transistor: SOT-23 Anzahl der Pins: 3 Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.032 Rds(on)-Prüfspannung: 4.5 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.032 SVHC: No SVHC (17-Jan-2023) | auf Bestellung 116893 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2045U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R | auf Bestellung 3472 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2045U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R | auf Bestellung 84000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2045U-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.3A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V | auf Bestellung 156000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2045U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R | auf Bestellung 3472 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2045U-7 | DIODES INC. | Description: DIODES INC. - DMP2045U-7 - Leistungs-MOSFET, p-Kanal, 20 V, 4.3 A, 0.032 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Verlustleistung: 800 Kanaltyp: p-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.032 rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 SVHC: No SVHC (17-Jan-2023) | auf Bestellung 116893 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2045U-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 0.8W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.1A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 90mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke | auf Bestellung 5451 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP2045U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R | auf Bestellung 84000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2045UFDB-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2045UFDB-13 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 3.1A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 740mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2045UFDB-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2045UFDB-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V U-DFN2020-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 740mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2045UFY4-7 | Diodes Inc | Trans MOSFET P-CH 20V 4.7A 3-Pin X2-DFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2045UFY4-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.7A X2-DFN2015 Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Power Dissipation (Max): 670mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN2015-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V | auf Bestellung 630000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2045UFY4-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.7A 3-Pin X2-DFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2045UFY4-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -25A; 1.49W Mounting: SMD Kind of package: reel; tape Power dissipation: 1.49W Polarisation: unipolar Gate charge: 6.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -25A Case: X2-DFN2015-3 Drain-source voltage: -20V Drain current: -3.8A On-state resistance: 0.16Ω Type of transistor: P-MOSFET Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2045UFY4-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.7A X2-DFN2015 Packaging: Cut Tape (CT) Package / Case: 3-XDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Power Dissipation (Max): 670mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN2015-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V | auf Bestellung 632957 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2045UFY4-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -25A; 1.49W Mounting: SMD Kind of package: reel; tape Power dissipation: 1.49W Polarisation: unipolar Gate charge: 6.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -25A Case: X2-DFN2015-3 Drain-source voltage: -20V Drain current: -3.8A On-state resistance: 0.16Ω Type of transistor: P-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2045UFY4-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.7A 3-Pin X2-DFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2045UFY4-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X2-DFN2015-3 T&R 3K | auf Bestellung 28144 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2045UQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 1 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2045UQ-13 | Diodes Zetex | P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2045UQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V~24V SOT23 T&R 10K | auf Bestellung 9776 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2045UQ-13 | Diodes Inc | P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2045UQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 1 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5352 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2045UQ-7 | DIODES INC. | Description: DIODES INC. - DMP2045UQ-7 - Leistungs-MOSFET, p-Kanal, 20 V, 4.3 A, 0.032 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20 rohsCompliant: YES Dauer-Drainstrom Id: 4.3 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 800 Gate-Source-Schwellenspannung, max.: 1 euEccn: NLR Verlustleistung: 800 Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3 Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.032 Rds(on)-Prüfspannung: 4.5 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.032 SVHC: No SVHC (17-Jan-2023) | auf Bestellung 4710 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2045UQ-7 | Diodes Zetex | P-Channel Enhancement Mode MOSFET | auf Bestellung 75000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2045UQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.2W Polarisation: unipolar Gate charge: 6.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -25A Case: SOT23 Drain-source voltage: -20V Drain current: -3.5A On-state resistance: 90mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2045UQ-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.3A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 49125 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2045UQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V~24V SOT23 T&R 3K | auf Bestellung 156278 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2045UQ-7 | Diodes Inc | MOSFET BVDSS: 8V24V SOT23 T&R 3K | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2045UQ-7 | Diodes Zetex | P-Channel Enhancement Mode MOSFET | auf Bestellung 702000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2045UQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.2W Polarisation: unipolar Gate charge: 6.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -25A Case: SOT23 Drain-source voltage: -20V Drain current: -3.5A On-state resistance: 90mΩ Type of transistor: P-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2045UQ-7 | Diodes Zetex | P-Channel Enhancement Mode MOSFET | auf Bestellung 702000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2045UQ-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.3A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 47360 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2045UQ-7 | DIODES INC. | Description: DIODES INC. - DMP2045UQ-7 - Leistungs-MOSFET, p-Kanal, 20 V, 4.3 A, 0.032 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Verlustleistung: 800 Kanaltyp: p-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.032 rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 SVHC: No SVHC (17-Jan-2023) | auf Bestellung 4710 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2045UQ-7 | Diodes Zetex | P-Channel Enhancement Mode MOSFET | auf Bestellung 2238000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2045UQ-7 | Diodes Zetex | P-Channel Enhancement Mode MOSFET | auf Bestellung 75000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2047UCB4-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.1A U-WLB1010-4 Packaging: Cut Tape (CT) Package / Case: 4-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 47mOhm @ 1A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: U-WLB1010-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V | auf Bestellung 2642 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2047UCB4-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.2A; Idm: -16A; 1.66W Mounting: SMD Case: U-WLB1010-4 Kind of package: reel; tape Pulsed drain current: -16A Drain-source voltage: -20V Drain current: -3.2A On-state resistance: 60mΩ Type of transistor: P-MOSFET Power dissipation: 1.66W Polarisation: unipolar Gate charge: 2.3nC Kind of channel: enhanced Gate-source voltage: ±6V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2047UCB4-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.1A U-WLB1010-4 Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 47mOhm @ 1A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: U-WLB1010-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2047UCB4-7 | Diodes Incorporated | MOSFET P-Ch ENH Mode FET -20V -6 | auf Bestellung 21000 Stücke: Lieferzeit 182-196 Tag (e) |
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| DMP2047UCB4-7 | Diodes Inc | Trans MOSFET P-CH 20V 4.1A 4-Pin U-WLB T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2047UCB4-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.2A; Idm: -16A; 1.66W Mounting: SMD Case: U-WLB1010-4 Kind of package: reel; tape Pulsed drain current: -16A Drain-source voltage: -20V Drain current: -3.2A On-state resistance: 60mΩ Type of transistor: P-MOSFET Power dissipation: 1.66W Polarisation: unipolar Gate charge: 2.3nC Kind of channel: enhanced Gate-source voltage: ±6V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2060UFDB-13 | Diodes Incorporated | MOSFET 20V Dual P-Ch Enh 12Vgs -1.4W 884pF | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2060UFDB-13 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 3.2A 6UDFN | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2060UFDB-7 | Diodes Zetex | Trans MOSFET P-CH 20V 3.2A 6-Pin UDFN EP T/R | auf Bestellung 5980 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2060UFDB-7 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 3.2A 6UDFN | auf Bestellung 2475 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DMP2060UFDB-7 | Diodes Inc | Trans MOSFET P-CH 20V 3.2A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2060UFDB-7 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 3.2A 6UDFN | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2060UFDB-7 | Diodes Incorporated | MOSFET 20V Dual P-Ch Enh 12Vgs -1.4W 884pF | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2065U-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V 24V SOT23 T&R 3K | auf Bestellung 2990 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2065UFDB | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2065UFDB-13 | Diodes Inc | Trans MOSFET P-CH 20V 4.5A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2065UFDB-13 | Diodes Zetex | Trans MOSFET P-CH 20V 4.5A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2065UFDB-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.6A; Idm: -25A; 1.54W Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.6A On-state resistance: 0.2Ω Type of transistor: P-MOSFET Power dissipation: 1.54W Kind of package: reel; tape Gate charge: 9.1nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -25A Mounting: SMD Case: U-DFN2020-6 Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2065UFDB-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.6A; Idm: -25A; 1.54W Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.6A On-state resistance: 0.2Ω Type of transistor: P-MOSFET Power dissipation: 1.54W Kind of package: reel; tape Gate charge: 9.1nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -25A Mounting: SMD Case: U-DFN2020-6 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2065UFDB-13 | Diodes Zetex | Trans MOSFET P-CH 20V 4.5A 6-Pin UDFN EP T/R | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2065UFDB-13 | Diodes Incorporated | Description: MOSFET 2 P-CH 4.5A UDFN2020-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active | auf Bestellung 60000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2065UFDB-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2065UFDB-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.5A 6-Pin UDFN EP T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2065UFDB-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.2A; 0.74W; U-DFN2020-6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.2A Power dissipation: 0.74W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2065UFDB-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.5A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2065UFDB-7 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 4.5A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.54W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2065UFDB-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K | auf Bestellung 620 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2065UFDB-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.5A 6-Pin UDFN EP T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2065UFDB-7 | Diodes Inc | Trans MOSFET P-CH 20V 4.5A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2065UFDB-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.5A 6-Pin UDFN EP T/R | auf Bestellung 150000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2065UFDB-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.5A 6-Pin UDFN EP T/R | auf Bestellung 150000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2065UFDB-7 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 4.5A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.54W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active | auf Bestellung 16369 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2065UFDB-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.2A; 0.74W; U-DFN2020-6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.2A Power dissipation: 0.74W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2065UQ-13 | Diodes Inc | MOSFET BVDSS: 8V24V SOT23 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2065UQ-13 | DIODES INCORPORATED | DMP2065UQ-13 SMD P channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2066LDM | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| DMP2066LDM-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.6A SOT-26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V | auf Bestellung 51585 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2066LDM-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.6A SOT-26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V | auf Bestellung 48000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2066LDM-7 | Diodes Incorporated | MOSFET P-channel 1.25W | auf Bestellung 9010 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||
| DMP2066LDMQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS | auf Bestellung 3000 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2066LDMQ-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.6A SOT-26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-26 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V | auf Bestellung 3171000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2066LDMQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SOT26 Mounting: SMD Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Case: SOT26 Gate charge: 10.1nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -18A Drain-source voltage: -20V Drain current: -3.7A On-state resistance: 70mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2066LDMQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SOT26 Mounting: SMD Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Case: SOT26 Gate charge: 10.1nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -18A Drain-source voltage: -20V Drain current: -3.7A On-state resistance: 70mΩ Type of transistor: P-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2066LSD-13 | Diodes Incorporated | MOSFET 2xP-Channel 2W | auf Bestellung 4911 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||
| DMP2066LSD-13 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 5.8A 8-SOIC | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2066LSD-13 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 5.8A 8-SOIC | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2066LSN | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| DMP2066LSN-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.6A SC59-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SC-59-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V | auf Bestellung 133720 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2066LSN-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SC59 Mounting: SMD Case: SC59 Pulsed drain current: -18A Power dissipation: 1.25W Gate charge: 10.1nC Polarisation: unipolar Drain current: -3.7A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Kind of package: reel; tape On-state resistance: 70mΩ Gate-source voltage: ±12V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2066LSN-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.6A SC59-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SC-59-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V | auf Bestellung 126000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2066LSN-7 | Diodes Incorporated | MOSFET P-channel 1.25W | auf Bestellung 16247 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2066LSN-7 | Diodes Inc | Trans MOSFET P-CH 20V 4.6A 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2066LSN-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.6A 3-Pin SC-59 T/R | auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2066LSN-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SC59 Mounting: SMD Case: SC59 Pulsed drain current: -18A Power dissipation: 1.25W Gate charge: 10.1nC Polarisation: unipolar Drain current: -3.7A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Kind of package: reel; tape On-state resistance: 70mΩ Gate-source voltage: ±12V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2066LSS-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 6.5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 5.8A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V | auf Bestellung 29744 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2066LSS-13 | Diodes Incorporated | MOSFET P-Channel 2.5W | auf Bestellung 2374 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||
| DMP2066LSS-13 | Diodes Inc | Trans MOSFET P-CH 20V 6.5A 8-Pin SOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2066LSS-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 6.5A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 5.8A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V | auf Bestellung 27500 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2066LVT-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.5A TSOT26 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2066LVT-13 | Diodes Incorporated | MOSFET FET BVDSS 8V 24V P-Ch 4.5A 45Vgs 1496 | auf Bestellung 9998 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||
| DMP2066LVT-7 | Diodes Incorporated | Description: MOSFET P-CH 20V TSOT26 | auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DMP2066LVT-7 | Diodes Incorporated | MOSFET FET BVDSS 8V 24V P-Ch 4.5A 45Vgs 1496 | auf Bestellung 2340 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||
| DMP2066LVT-7 | Diodes Incorporated | Description: MOSFET P-CH 20V TSOT26 | auf Bestellung 248118000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DMP2066LVT-7 | Diodes Incorporated | Description: MOSFET P-CH 20V TSOT26 | auf Bestellung 248118000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DMP2066UFDE-7 | Diodes Inc | Trans MOSFET P-CH 20V 6.2A 6-Pin DFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2066UFDE-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K | auf Bestellung 5880 Stücke: Lieferzeit 310-324 Tag (e) |
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| DMP2066UFDE-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 6.2A 6UDFN | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2066UFDE-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.9A; Idm: -25A; 2.03W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: -25A Power dissipation: 2.03W Gate charge: 14.4nC Polarisation: unipolar Drain current: -5.9A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Kind of package: reel; tape On-state resistance: 75mΩ Gate-source voltage: ±12V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2066UFDE-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 6.2A 6UDFN | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2066UFDE-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.9A; Idm: -25A; 2.03W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: -25A Power dissipation: 2.03W Gate charge: 14.4nC Polarisation: unipolar Drain current: -5.9A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Kind of package: reel; tape On-state resistance: 75mΩ Gate-source voltage: ±12V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2067LVT-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.2A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2067LVT-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 1555 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2067LVT-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.2A TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V | auf Bestellung 862 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2069UFY4-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW Case: X2-DFN2015-3 Mounting: SMD On-state resistance: 90mΩ Kind of package: reel; tape Power dissipation: 0.53W Polarisation: unipolar Gate charge: 9.1nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -12A Drain-source voltage: -20V Drain current: -2.2A Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2069UFY4-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 2.5A DFN2015H4-3 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V Power Dissipation (Max): 530mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN2015H4-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 214 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2069UFY4-7 | Diodes Incorporated | MOSFET MOSFET P-CHAN. | auf Bestellung 23980 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2069UFY4-7 | DIODES INC. | Description: DIODES INC. - DMP2069UFY4-7 - Leistungs-MOSFET, p-Kanal, 20 V, 2.5 A, 0.036 ohm, X2-DFN2015, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 550mV euEccn: NLR Verlustleistung: 530mW Bauform - Transistor: X2-DFN2015 Anzahl der Pins: 3Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.036ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2069UFY4-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW Case: X2-DFN2015-3 Mounting: SMD On-state resistance: 90mΩ Kind of package: reel; tape Power dissipation: 0.53W Polarisation: unipolar Gate charge: 9.1nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -12A Drain-source voltage: -20V Drain current: -2.2A Type of transistor: P-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2069UFY4-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 2.5A DFN2015H4-3 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V Power Dissipation (Max): 530mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN2015H4-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 214 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2069UFY4-7 | Diodes Inc | Trans MOSFET P-CH 20V 2.5A 3-Pin DFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2069UFY4-7 | DIODES INC. | Description: DIODES INC. - DMP2069UFY4-7 - Leistungs-MOSFET, p-Kanal, 20 V, 2.5 A, 0.036 ohm, X2-DFN2015, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 550mV euEccn: NLR Verlustleistung: 530mW Bauform - Transistor: X2-DFN2015 Anzahl der Pins: 3Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.036ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2069UFY4Q-7 | DIODES INC. | Description: DIODES INC. - DMP2069UFY4Q-7 - Leistungs-MOSFET, p-Kanal, 20 V, 2.5 A, 0.036 ohm, X2-DFN2015, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 550mV euEccn: NLR Verlustleistung: 530mW Bauform - Transistor: X2-DFN2015 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.036ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2069UFY4Q-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW Case: X2-DFN2015-3 Mounting: SMD On-state resistance: 90mΩ Kind of package: reel; tape Power dissipation: 0.53W Polarisation: unipolar Gate charge: 9.1nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -12A Drain-source voltage: -20V Drain current: -2.2A Type of transistor: P-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2069UFY4Q-7 | Diodes Inc | MOSFET BVDSS: 8V24V X2-DFN2015-3 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2069UFY4Q-7 | DIODES INC. | Description: DIODES INC. - DMP2069UFY4Q-7 - Leistungs-MOSFET, p-Kanal, 20 V, 2.5 A, 0.036 ohm, X2-DFN2015, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 550mV euEccn: NLR Verlustleistung: 530mW Bauform - Transistor: X2-DFN2015 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.036ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2069UFY4Q-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW Case: X2-DFN2015-3 Mounting: SMD On-state resistance: 90mΩ Kind of package: reel; tape Power dissipation: 0.53W Polarisation: unipolar Gate charge: 9.1nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -12A Drain-source voltage: -20V Drain current: -2.2A Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2069UFY4Q-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V X2-DFN2015- | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2070U-7 | DIODES INCORPORATED | DMP2070U-7 SMD P channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2070U-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2070U-7 | Diodes Inc | MOSFET BVDSS: 8V24V SOT23 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2070U-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 | auf Bestellung 2476 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2070UCB6-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 2.5A U-WLB1510-6 | auf Bestellung 1834 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DMP2070UCB6-7 | Diodes Inc | Trans MOSFET P-CH 20V 2.5A 6-Pin WLB T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2070UCB6-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 2.5A U-WLB1510-6 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2070UCB6-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 2.5A U-WLB1510-6 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2070UCB6-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 U-WLB1015-6 T&R 3K | auf Bestellung 12605 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||
| DMP2070UQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2070UQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V SOT23 T&R 3K | auf Bestellung 2109 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2070UQ-7 | DIODES INCORPORATED | DMP2070UQ-7 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2070UQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 | auf Bestellung 698 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2075UFDB-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2075UFDB-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -25A; 1.4W Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A On-state resistance: 137mΩ Type of transistor: P-MOSFET Power dissipation: 1.4W Kind of package: reel; tape Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -25A Mounting: SMD Case: U-DFN2020-6 Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2075UFDB-13 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 3.8A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 642pF @ 10V Rds On (Max) @ Id, Vgs: 75mOhm @ 2.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) | auf Bestellung 60000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2075UFDB-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -25A; 1.4W Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A On-state resistance: 137mΩ Type of transistor: P-MOSFET Power dissipation: 1.4W Kind of package: reel; tape Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -25A Mounting: SMD Case: U-DFN2020-6 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2075UFDB-13 | Diodes Inc | Trans MOSFET P-CH 20V 3.8A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2075UFDB-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -25A; 1.4W Mounting: SMD Pulsed drain current: -25A Power dissipation: 1.4W Gate charge: 15nC Polarisation: unipolar Drain current: -3A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: U-DFN2020-6 On-state resistance: 137mΩ Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2075UFDB-7 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 3.8A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 642pF @ 10V Rds On (Max) @ Id, Vgs: 75mOhm @ 2.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active | auf Bestellung 201000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2075UFDB-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -25A; 1.4W Mounting: SMD Pulsed drain current: -25A Power dissipation: 1.4W Gate charge: 15nC Polarisation: unipolar Drain current: -3A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: U-DFN2020-6 On-state resistance: 137mΩ | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2075UFDB-7 | Diodes Zetex | Trans MOSFET P-CH 20V 3.8A 6-Pin UDFN EP T/R | auf Bestellung 4671 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2075UFDB-7 | Diodes Inc | Trans MOSFET P-CH 20V 3.8A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2075UFDB-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 83016 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2075UFDB-7 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 3.8A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 642pF @ 10V Rds On (Max) @ Id, Vgs: 75mOhm @ 2.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active | auf Bestellung 216173 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2075UVT-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2075UVT-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V-24V TSOT26 T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2075UVT-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2075UVT-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V-24V TSOT26 T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2077UCA3-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4A X4-DSN1006-3 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 78mOhm @ 500mA, 8V Power Dissipation (Max): 660mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X4-DSN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V | auf Bestellung 4890 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2077UCA3-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4A X4-DSN1006-3 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 78mOhm @ 500mA, 8V Power Dissipation (Max): 660mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X4-DSN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2078LCA3-7 | Diodes Inc | Trans MOSFET P-CH 20V 3.4A 3-Pin X4-DSN T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2078LCA3-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 3.4A X4DSN1006-3 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 78mOhm @ 500mA, 8V Power Dissipation (Max): 810mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: X4-DSN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): -12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 10 V | auf Bestellung 26171 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2078LCA3-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X4-DSN1006-3 T&R 10K | auf Bestellung 70178 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2078LCA3-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W Kind of package: reel; tape Drain-source voltage: -20V Drain current: -2.7A On-state resistance: 0.6Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Gate charge: 1.6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -13A Mounting: SMD Case: X4-DSN1006-3 Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2078LCA3-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 3.4A X4DSN1006-3 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 78mOhm @ 500mA, 8V Power Dissipation (Max): 810mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: X4-DSN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): -12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 10 V | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2078LCA3-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W Kind of package: reel; tape Drain-source voltage: -20V Drain current: -2.7A On-state resistance: 0.6Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Gate charge: 1.6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -13A Mounting: SMD Case: X4-DSN1006-3 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2079LCA3-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 3.4A X4DSN1006-3 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 78mOhm @ 500mA, 8V Power Dissipation (Max): 810mW Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: X4-DSN1006-3 (Type B) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): -12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 10 V | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2088LCP3-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 1966 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||
| DMP2088LCP3-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 2.9A X2DSN1006-3 | auf Bestellung 3196 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2088LCP3-7 | Diodes Zetex | Trans MOSFET P-CH 20V 2.9A 3-Pin X2-DSN T/R | auf Bestellung 579000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2088LCP3-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 2.9A X2DSN1006-3 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2088LCP3-7 | Diodes Inc | Trans MOSFET P-CH 20V 2.9A 3-Pin X2-DSN T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2090UFDB-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2090UFDB-13 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 3.2A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Common Source Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 790mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2090UFDB-13 | Diodes Zetex | DMP2090UFDB-13 | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2090UFDB-7 | Diodes Incorporated | Film Capacitors DC-LINK MKP 4 90.0 uF 600 VDC 35x50x57 PCM 52.5 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2090UFDB-7 | DIODES INC. | Description: DIODES INC. - DMP2090UFDB-7 - Dual-MOSFET, p-Kanal, 20 V, 20 V, 3.2 A, 3.2 A, 0.037 ohm tariffCode: 85415000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 3.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 3.2A Drain-Source-Durchgangswiderstand, p-Kanal: 0.037ohm Verlustleistung, p-Kanal: 790W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.037ohm productTraceability: No Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 790W Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2695 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2090UFDB-7 | DIODES INC. | Description: DIODES INC. - DMP2090UFDB-7 - Dual-MOSFET, p-Kanal, 20 V, 20 V, 3.2 A, 3.2 A, 0.037 ohm tariffCode: 85415000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 3.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 3.2A Drain-Source-Durchgangswiderstand, p-Kanal: 0.037ohm Verlustleistung, p-Kanal: 790W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.037ohm productTraceability: No Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 790W Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2695 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2100U-7 | Diodes Incorporated | Description: MOSFET P CH 20V 4.3A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 216 pF @ 15 V | auf Bestellung 537000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2100U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R | auf Bestellung 96000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2100U-7 | DIODES/ZETEX | Trans MOSFET P-CH 20V 4.3A Automotive 3-Pin SOT-23 T/R DMP2100U-7 DIODES TDMP2100U-7 Diodes Anzahl je Verpackung: 100 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP2100U-7 | Diodes Inc | Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DMP2100U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2100U-7 | Diodes Incorporated | MOSFET 20V P-CH MOSFET | auf Bestellung 54731 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||
| DMP2100U-7 | Diodes Incorporated | Description: MOSFET P CH 20V 4.3A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 216 pF @ 15 V | auf Bestellung 540807 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2100U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2100UCB9-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-WLB1515-9 T&R 3K | auf Bestellung 1659 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||
| DMP2100UCB9-7 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 3A 9UWLB Packaging: Cut Tape (CT) Package / Case: 9-UFBGA, WLBGA Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Common Source Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: U-WLB1515-9 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2100UCB9-7 | Diodes Inc | Trans MOSFET P-CH 20V 3A 9-Pin U-WLB T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2100UCB9-7 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 3A 9UWLB Packaging: Tape & Reel (TR) Package / Case: 9-UFBGA, WLBGA Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Common Source Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: U-WLB1515-9 | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2100UFU-13 | Diodes Incorporated | Description: MOSFET 2P-CH 20V U-DFN2030-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.7A Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: U-DFN2030-6 (Type B) Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2100UFU-13 | Diodes Incorporated | MOSFET Dual P-Ch Enh FET 20Vdss 10Vgss 0.9W | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2100UFU-7 | Diodes Incorporated | Description: MOSFET 2P-CH 20V U-DFN2030-6 Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.7A Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: U-DFN2030-6 (Type B) Part Status: Active | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2100UFU-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; 0.9W; U-DFN2030-6 Polarisation: unipolar Mounting: SMD Drain-source voltage: -20V Drain current: -4.1A On-state resistance: 75mΩ Type of transistor: P-MOSFET x2 Power dissipation: 0.9W Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±10V Case: U-DFN2030-6 | auf Bestellung 2520 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2100UFU-7 | Diodes Inc | Dual P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2100UFU-7 | Diodes Incorporated | MOSFET Dual P-Ch Enh FET 20Vdss 10Vgss 0.9W | auf Bestellung 4094 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2100UFU-7 | Diodes Zetex | Dual P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2100UFU-7 | Diodes Incorporated | Description: MOSFET 2P-CH 20V U-DFN2030-6 Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.7A Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: U-DFN2030-6 (Type B) Part Status: Active | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DMP2100UFU-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; 0.9W; U-DFN2030-6 Polarisation: unipolar Mounting: SMD Drain-source voltage: -20V Drain current: -4.1A On-state resistance: 75mΩ Type of transistor: P-MOSFET x2 Power dissipation: 0.9W Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±10V Case: U-DFN2030-6 Anzahl je Verpackung: 1 Stücke | auf Bestellung 2520 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP2100UFU-7 | Diodes Zetex | Dual P-Channel Enhancement Mode MOSFET | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2100UQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; 0.8W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.4A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Application: automotive industry | auf Bestellung 3660 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2100UQ-7 | Diodes Inc | Trans MOSFET P-CH 20V 4.3A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2100UQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V~24V SOT23 T&R 3K | auf Bestellung 2979 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2100UQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.3A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2100UQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT23 T&R Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 216 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 369000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2100UQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; 0.8W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.4A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Application: automotive industry Anzahl je Verpackung: 1 Stücke | auf Bestellung 3660 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP2100UQ-7 | DIODES/ZETEX | P-MOSFET -20V -4A DMP2100UQ-7 Diodes TDMP2100uq Anzahl je Verpackung: 100 Stücke | auf Bestellung 180 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP2101UCB9-7 | Diodes Inc | Trans MOSFET P-CH 20V 3.2A 9-Pin U-WLB T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2101UCB9-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 2045 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||
| DMP2101UCB9-7 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 9UWLB | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2101UCP9-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V~24V X2-DSN1515-9 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2101UCP9-7 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 2.5A 9DSN1515 Packaging: Bulk Package / Case: 9-XFBGA, DSBGA Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 970mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 392pF @ 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: X2-DSN1515-9 (Type B) | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2104LP-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 1.5A 3DFN1411 Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN1411-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 16 V | auf Bestellung 51000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2104LP-7 | Diodes Inc | Trans MOSFET P-CH 20V 1.5A 3-Pin DFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DMP2104LP-7 | Diodes Zetex | Trans MOSFET P-CH 20V 1.5A 3-Pin DFN T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2104LP-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; 0.5W; DFN1411-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.2A Power dissipation: 0.5W Case: DFN1411-3 Gate-source voltage: ±12V On-state resistance: 0.24Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 1459 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP2104LP-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; 0.5W; DFN1411-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.2A Power dissipation: 0.5W Case: DFN1411-3 Gate-source voltage: ±12V On-state resistance: 0.24Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 1459 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2104LP-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 1.5A 3DFN1411 Packaging: Cut Tape (CT) Package / Case: 3-UDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN1411-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 16 V | auf Bestellung 54914 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP2104LP-7 | Diodes Zetex | Trans MOSFET P-CH 20V 1.5A 3-Pin DFN T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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