Produkte > DMT

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis ohne MwSt
DMT-09-1-4B-NLRDI ElectronicsBUZZER, ROHS COMPLIANT.
auf Bestellung 3998 Stücke:
Lieferzeit 14-21 Tag (e)
261+0.6 EUR
932+ 0.16 EUR
Mindestbestellmenge: 261
DMT-09-1-4B-NLRDI ElectronicsBUZZER, ROHS COMPLIANT.
auf Bestellung 3998 Stücke:
Lieferzeit 14-21 Tag (e)
932+0.17 EUR
Mindestbestellmenge: 932
DMT-1-02Adam TechnologiesCONNECTOR, WIRE HOUSING, 3.00MM
Produkt ist nicht verfügbar
DMT-1-02-GWAdam TechnologiesCONNECTOR, WIRE HOUSING, 3.00MM
Produkt ist nicht verfügbar
DMT-1-02-SGAdam Technologies3MM LATCHING HSG FEMALE 1*2P BK RoHS 1Kpcs,bag
Produkt ist nicht verfügbar
DMT-1-03Adam TechnologiesCONNECTOR, WIRE HOUSING, 3.00MM
Produkt ist nicht verfügbar
DMT-1-04Adam TechnologiesCONNECTOR, WIRE HOUSING, 3.00MM
Produkt ist nicht verfügbar
DMT-1-06Adam TechnologiesCONNECTOR, WIRE HOUSING, 3.00MM
Produkt ist nicht verfügbar
DMT-1-08Adam TechnologiesCONNECTOR, WIRE HOUSING, 3.00MM
Produkt ist nicht verfügbar
DMT-1206S-NLRDI ElectronicsAudio Alert
Produkt ist nicht verfügbar
DMT-1606S-NLRDI ElectronicsAudio 4V 7V 30mA 6V 85dB Through Hole Pin
auf Bestellung 1942 Stücke:
Lieferzeit 14-21 Tag (e)
103+1.52 EUR
Mindestbestellmenge: 103
DMT-1606S-NLRDI ElectronicsAudio 4V 7V 30mA 6V 85dB Through Hole Pin
auf Bestellung 1942 Stücke:
Lieferzeit 14-21 Tag (e)
103+1.52 EUR
Mindestbestellmenge: 103
DMT-1612S-NLRDI ElectronicsAUDIO ALERT W/OSCILLATING CIRCUIT
Produkt ist nicht verfügbar
DMT-1A-02Adam TechDescription: CONN RECEPT 2POS SINGLE 3.0MM
auf Bestellung 4994 Stücke:
Lieferzeit 21-28 Tag (e)
DMT-1A-03Adam TechDescription: CONN RECEPT 3POS SINGLE 3.0MM
auf Bestellung 4989 Stücke:
Lieferzeit 21-28 Tag (e)
DMT-1A-04Adam TechDescription: CONN RECEPT 4POS SINGLE 3.0MM
auf Bestellung 4999 Stücke:
Lieferzeit 21-28 Tag (e)
DMT-1A-05Adam TechnologiesHousing F 5 POS 3mm Pitch Crimp Straight Cable Mount
Produkt ist nicht verfügbar
DMT-1A-05Adam TechDescription: CONN RCPT HSG 5POS 3.00MM
Features: Glow Wire Compliant
Packaging: Bag
Connector Type: Receptacle
Contact Termination: Crimp
Color: Black
Mounting Type: Free Hanging (In-Line)
Number of Positions: 5
Pitch: 0.118" (3.00mm)
Contact Type: Female Socket
Fastening Type: Latch Lock
Part Status: Active
Insulation Material: Polyamide (PA), Nylon
Number of Rows: 1
auf Bestellung 4990 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.09 EUR
28+ 0.96 EUR
30+ 0.88 EUR
50+ 0.83 EUR
100+ 0.79 EUR
250+ 0.73 EUR
500+ 0.69 EUR
1000+ 0.57 EUR
3000+ 0.52 EUR
Mindestbestellmenge: 24
DMT-2-10-R-P-PCBAdam TechnologiesDMT-2-10-R-P-PCB
Produkt ist nicht verfügbar
DMT-2A-04Adam TechDescription: CONN RCPT HSG 4POS 3.00MM
Packaging: Bag
Connector Type: Receptacle
Contact Termination: Crimp
Color: Black
Mounting Type: Free Hanging (In-Line)
Number of Positions: 4
Pitch: 0.118" (3.00mm)
Operating Temperature: -25°C ~ 120°C
Contact Type: Female Socket
Fastening Type: Latch Lock
Row Spacing: 0.118" (3.00mm)
Insulation Material: Polyamide (PA66), Nylon 6/6
Number of Rows: 2
auf Bestellung 1459 Stücke:
Lieferzeit 21-28 Tag (e)
53+0.49 EUR
62+ 0.42 EUR
70+ 0.37 EUR
75+ 0.35 EUR
100+ 0.32 EUR
250+ 0.29 EUR
500+ 0.27 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 53
DMT-2A-04Adam TechnologiesConnector Crimp Housing RCP 4Pos Dual 3.0mm
Produkt ist nicht verfügbar
DMT-2A-06Adam TechDescription: CONNECT HOUSING
auf Bestellung 14702 Stücke:
Lieferzeit 21-28 Tag (e)
38+0.7 EUR
44+ 0.59 EUR
50+ 0.52 EUR
55+ 0.48 EUR
100+ 0.46 EUR
250+ 0.41 EUR
500+ 0.39 EUR
1000+ 0.33 EUR
2500+ 0.3 EUR
Mindestbestellmenge: 38
DMT-2A-08Adam TechDescription: CONN RECEPT 8POS DUAL 3.0MM
auf Bestellung 4859 Stücke:
Lieferzeit 21-28 Tag (e)
DMT-2A-10Adam TechnologiesConnector Crimp Housing RCP 10Pos Dual 3.0mm
Produkt ist nicht verfügbar
DMT-2A-10Adam TechDescription: CONN RECEPT 10POS DUAL 3.0MM
auf Bestellung 4987 Stücke:
Lieferzeit 21-28 Tag (e)
DMT-2A-12Adam TechnologiesConnector Crimp Housing RCP 12Pos Dual 3.0mm
Produkt ist nicht verfügbar
DMT-2A-12Adam TechDescription: CONN RECEPT 12POS DUAL 3.0MM
auf Bestellung 4976 Stücke:
Lieferzeit 21-28 Tag (e)
DMT-2A-14Adam TechnologiesConnector Crimp Housing RCP 14Pos Dual 3.0mm
Produkt ist nicht verfügbar
DMT-2A-14Adam TechDescription: CONN RECEPT 14POS DUAL 3.0MM
auf Bestellung 4999 Stücke:
Lieferzeit 21-28 Tag (e)
DMT-2A-16Adam TechDescription: CONN RECEPT 16POS DUAL 3.0MM
auf Bestellung 4999 Stücke:
Lieferzeit 21-28 Tag (e)
DMT-2A-16Adam TechnologiesConnector Crimp Housing RCP 16Pos Dual 3.0mm
Produkt ist nicht verfügbar
DMT-2A-24Adam TechDescription: CONN RECEPT 24POS DUAL 3.0MM
auf Bestellung 2933 Stücke:
Lieferzeit 21-28 Tag (e)
DMT-4CCMONACORDescription: MONACOR - DMT-4CC - Messzubehör, Koffer, Schwarz, Digital- und Analogmultimeter
tariffCode: 42021299
productTraceability: No
rohsCompliant: NA
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Produktpalette: -
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
DMT-6-12Signal TransformerDescription: XFRMR LAMINATED 6VA CHAS MOUNT
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)
DMT-6-12Bel Signal TransformerPower Transformers 5060 Hz, Laminated Transformer
auf Bestellung 44 Stücke:
Lieferzeit 14-28 Tag (e)
1+59.64 EUR
5+ 56.16 EUR
10+ 52.65 EUR
25+ 50.86 EUR
DMT-6-15Bel Signal TransformerPower Transformers 5060 Hz, Laminated Transformer
auf Bestellung 293 Stücke:
Lieferzeit 14-28 Tag (e)
2+49.5 EUR
10+ 43.73 EUR
25+ 42.22 EUR
Mindestbestellmenge: 2
DMT-6-15Signal TransformerDescription: PWR XFMR LAMINATED 6VA CHAS MT
auf Bestellung 21 Stücke:
Lieferzeit 21-28 Tag (e)
1+49.95 EUR
10+ 44.07 EUR
DMT-7-12Signal TransformerDescription: PWR XFMR LAMINATED 7VA CHAS MT
Packaging: Bulk
Size / Dimension: 93.70mm L x 49.20mm W
Mounting Type: Chassis Mount
Type: Laminated Core
Weight: 1.7 lbs (771.1 g)
Termination Style: Solder, Quick Connect
Primary Winding(s): Dual
Secondary Winding(s): Dual
Power - Max: 7VA
Voltage - Isolation: 2500Vrms
Current - Output (Max): 2.8A, 350mA
Voltage - Primary: 115V, 230V
Height - Seated (Max): 57.80mm
Voltage - Secondary (Full Load): 5V, 12V
Center Tap: Yes
Produkt ist nicht verfügbar
DMT-7-12Bel Signal TransformerPower Transformers 5060 Hz, Laminated Transformer
auf Bestellung 12 Stücke:
Lieferzeit 14-28 Tag (e)
DMT-7-15Bel Signal TransformerPower Transformers 5060 Hz, Laminated Transformer
auf Bestellung 19 Stücke:
Lieferzeit 14-28 Tag (e)
1+58.24 EUR
10+ 51.38 EUR
20+ 49.37 EUR
DMT-7-15Signal TransformerDescription: PWR XFMR LAMINATED 7VA CHAS MT
Packaging: Bulk
Size / Dimension: 93.70mm L x 49.20mm W
Mounting Type: Chassis Mount
Type: Laminated Core
Weight: 1.7 lbs (771.1 g)
Termination Style: Solder, Quick Connect
Primary Winding(s): Dual
Secondary Winding(s): Dual
Power - Max: 7VA
Voltage - Isolation: 2500Vrms
Current - Output (Max): 2.8A, 280mA
Voltage - Primary: 115V, 230V
Height - Seated (Max): 57.80mm
Voltage - Secondary (Full Load): 5V, 15V
Center Tap: Yes
Produkt ist nicht verfügbar
DMT-8-12Signal TransformerDescription: XFRMR LAMINATED 8VA CHAS MOUNT
auf Bestellung 6 Stücke:
Lieferzeit 21-28 Tag (e)
DMT-8-12Bel Signal TransformerPower Transformers 5060 Hz, Laminated Transformer
Produkt ist nicht verfügbar
DMT-8-15Signal TransformerDescription: PWR XFMR LAMINATED 8VA CHAS MT
auf Bestellung 3 Stücke:
Lieferzeit 21-28 Tag (e)
DMT-8-15Bel Signal TransformerPower Transformers 5060 Hz, Laminated Transformer
auf Bestellung 6 Stücke:
Lieferzeit 14-28 Tag (e)
DMT-A-C-F-T-RAdam TechnologiesConn Contact Stamped Crimp Contact 20-30 AWG
Produkt ist nicht verfügbar
DMT-A5-C-F-T-RAdam TechnologiesConn Contact Stamped Crimp Contact 20-30 AWG
Produkt ist nicht verfügbar
DMT-B-C-F-T-RAdam TechnologiesConn Contact Stamped Crimp Contact 20-30 AWG
Produkt ist nicht verfügbar
DMT-B5-C-F-T-RAdam TechnologiesConn Contact Stamped Crimp Contact 20-30 AWG
Produkt ist nicht verfügbar
DMT-B5-C-F-T-RAdam TechDescription: CONTACT TIN 20-24 AWG
auf Bestellung 4859 Stücke:
Lieferzeit 21-28 Tag (e)
100+0.26 EUR
200+ 0.13 EUR
246+ 0.11 EUR
264+ 0.099 EUR
274+ 0.095 EUR
317+ 0.082 EUR
500+ 0.079 EUR
1000+ 0.069 EUR
2500+ 0.062 EUR
Mindestbestellmenge: 100
DMT-B5-C-F-T-RAdam TechDescription: CONTACT TIN 20-24 AWG
Produkt ist nicht verfügbar
DMT-D-1-02Adam TechDescription: CONN RECEPT 2POS SINGLE 3.0MM
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
DMT-D-1-03Adam TechDescription: CONN RECEPT 3POS SINGLE 3.0MM
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
DMT-D-1-04Adam TechDescription: CONN RECEPT 4POS SINGLE 3.0MM
auf Bestellung 3990 Stücke:
Lieferzeit 21-28 Tag (e)
DMT-D-1-05Adam TechDescription: CONN RECEPT 5POS SINGLE 3.0MM
auf Bestellung 4764 Stücke:
Lieferzeit 21-28 Tag (e)
DMT-D-2-22-HFAdam Technologies3MM LATCHING HSG 2*11P BK HF RoHS
Produkt ist nicht verfügbar
DMT1-16-6.7LCoilcraftFixed Inductors DMT1 Power Chokes Toroidal Output
auf Bestellung 30 Stücke:
Lieferzeit 14-28 Tag (e)
DMT1-180-1.5LCoilcraftFixed Inductors DMT1 Power Chokes Toroidal Output
auf Bestellung 55 Stücke:
Lieferzeit 14-28 Tag (e)
DMT1-26-5.1LCoilcraftFixed Inductors DMT1 Power Chokes Toroidal Output
auf Bestellung 26 Stücke:
Lieferzeit 14-28 Tag (e)
DMT1-43-3.8LCoilcraftPower Inductors - Leaded 43uH Unshld 3.8A 70mOhms
Produkt ist nicht verfügbar
DMT1-7-10LCoilcraftPower Inductors - Leaded 7uH Shld 10A 10mOhms
Produkt ist nicht verfügbar
DMT1-84-2.4LCoilcraftPower Inductors - Leaded 84uH Unshld 2.4A 140mOhms
auf Bestellung 5 Stücke:
Lieferzeit 14-28 Tag (e)
3+23.48 EUR
270+ 16.48 EUR
510+ 11.52 EUR
1020+ 10.71 EUR
Mindestbestellmenge: 3
DMT10H003SPSW-13Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 152A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.2W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5542 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H003SPSW-13Diodes IncMOSFET BVDSS: 61V100V PowerDI5060-8 T&R 2.5K
Produkt ist nicht verfügbar
DMT10H003SPSW-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V PowerDI5060-8 T&R 2.5K
Produkt ist nicht verfügbar
DMT10H009LCG-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.9A; Idm: 160A; 2.1W
Mounting: SMD
Case: V-DFN3333-8
Type of transistor: N-MOSFET
On-state resistance: 12.9mΩ
Drain current: 9.9A
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20.2nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Produkt ist nicht verfügbar
DMT10H009LCG-7DIODES INC.Description: DIODES INC. - DMT10H009LCG-7 - Leistungs-MOSFET, n-Kanal, 100 V, 47 A, 0.0072 ohm, VDFN3333, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 47A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 1W
Bauform - Transistor: VDFN3333
Anzahl der Pins: 8Pins
Produktpalette: PW Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0072ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
DMT10H009LCG-7Diodes IncTrans MOSFET N-CH 100V 12.4A 8-Pin VDFN EP T/R
Produkt ist nicht verfügbar
DMT10H009LCG-7Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V
auf Bestellung 1931 Stücke:
Lieferzeit 14-28 Tag (e)
19+2.89 EUR
23+ 2.35 EUR
100+ 1.83 EUR
500+ 1.55 EUR
1000+ 1.26 EUR
2000+ 1.19 EUR
4000+ 1.13 EUR
Mindestbestellmenge: 19
DMT10H009LCG-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.9A; Idm: 160A; 2.1W
Mounting: SMD
Case: V-DFN3333-8
Type of transistor: N-MOSFET
On-state resistance: 12.9mΩ
Drain current: 9.9A
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20.2nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
DMT10H009LCG-7Diodes IncorporatedDescription: MOSFET N-CH 100V 12.4A/47A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
auf Bestellung 3142 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.86 EUR
12+ 2.33 EUR
100+ 1.81 EUR
500+ 1.54 EUR
1000+ 1.25 EUR
Mindestbestellmenge: 10
DMT10H009LCG-7DIODES INC.Description: DIODES INC. - DMT10H009LCG-7 - Leistungs-MOSFET, n-Kanal, 100 V, 47 A, 0.0072 ohm, VDFN3333, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 47A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 1W
Bauform - Transistor: VDFN3333
Anzahl der Pins: 8Pins
Produktpalette: PW Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0072ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
DMT10H009LCG-7Diodes ZetexTrans MOSFET N-CH 100V 12.4A 8-Pin VDFN EP T/R
Produkt ist nicht verfügbar
DMT10H009LCG-7Diodes IncorporatedDescription: MOSFET N-CH 100V 12.4A/47A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+1.18 EUR
Mindestbestellmenge: 2000
DMT10H009LFG-13Diodes Zetex100V N-CHANNEL ENHANCEMENT MODE MOSFET
Produkt ist nicht verfügbar
DMT10H009LFG-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V PowerDI3333-8 T&R 3K
Produkt ist nicht verfügbar
DMT10H009LFG-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 200A; 2W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: N-MOSFET
On-state resistance: 12.5mΩ
Drain current: 11A
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
DMT10H009LFG-7Diodes ZetexTrans MOSFET N-CH 100V 13A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT10H009LFG-7Diodes IncorporatedDescription: MOSFET N-CH 100V 13A/50A PWRDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2361 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+1.36 EUR
Mindestbestellmenge: 2000
DMT10H009LFG-7Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V PowerDI3333-8 T&R 2K
Produkt ist nicht verfügbar
DMT10H009LFG-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 200A; 2W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: N-MOSFET
On-state resistance: 12.5mΩ
Drain current: 11A
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Produkt ist nicht verfügbar
DMT10H009LFG-7Diodes IncTrans MOSFET N-CH 100V 13A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT10H009LH3DIODES INCORPORATEDCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; Idm: 336A; 61W; TO251
Mounting: THT
Case: TO251
Type of transistor: N-MOSFET
On-state resistance: 13mΩ
Drain current: 67A
Power dissipation: 61W
Polarisation: unipolar
Kind of package: tube
Gate charge: 20.2nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 336A
Produkt ist nicht verfügbar
DMT10H009LH3Diodes IncTrans MOSFET N-CH 100V 84A 3-Pin(3+Tab) TO-251 Tube
Produkt ist nicht verfügbar
DMT10H009LH3DIODES INCORPORATEDCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; Idm: 336A; 61W; TO251
Mounting: THT
Case: TO251
Type of transistor: N-MOSFET
On-state resistance: 13mΩ
Drain current: 67A
Power dissipation: 61W
Polarisation: unipolar
Kind of package: tube
Gate charge: 20.2nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 336A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMT10H009LH3Diodes ZetexTrans MOSFET N-CH 100V 84A 3-Pin(3+Tab) TO-251 Tube
Produkt ist nicht verfügbar
DMT10H009LH3Diodes IncorporatedDescription: MOSFET N-CH 100V 84A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H009LK3Diodes IncorporatedMOSFET
Produkt ist nicht verfügbar
DMT10H009LK3-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; Idm: 360A; 3W; TO252
Mounting: SMD
Case: TO252
Type of transistor: N-MOSFET
On-state resistance: 13mΩ
Drain current: 73A
Power dissipation: 3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT10H009LK3-13Diodes ZetexN-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
DMT10H009LK3-13DIODES INC.Description: DIODES INC. - DMT10H009LK3-13 - Leistungs-MOSFET, n-Kanal, 100 V, 90 A, 0.0067 ohm, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 90A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 1.7W
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0067ohm
auf Bestellung 9068 Stücke:
Lieferzeit 14-21 Tag (e)
DMT10H009LK3-13Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
auf Bestellung 1557500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.16 EUR
5000+ 1.1 EUR
12500+ 1.05 EUR
Mindestbestellmenge: 2500
DMT10H009LK3-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V TO252 T&R 2.5K
auf Bestellung 19190 Stücke:
Lieferzeit 14-28 Tag (e)
19+2.81 EUR
23+ 2.3 EUR
100+ 1.79 EUR
500+ 1.52 EUR
1000+ 1.24 EUR
2500+ 1.16 EUR
5000+ 1.13 EUR
Mindestbestellmenge: 19
DMT10H009LK3-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; Idm: 360A; 3W; TO252
Mounting: SMD
Case: TO252
Type of transistor: N-MOSFET
On-state resistance: 13mΩ
Drain current: 73A
Power dissipation: 3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
Produkt ist nicht verfügbar
DMT10H009LK3-13DIODES INC.Description: DIODES INC. - DMT10H009LK3-13 - Leistungs-MOSFET, n-Kanal, 100 V, 90 A, 0.0067 ohm, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 90A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 1.7W
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0067ohm
auf Bestellung 9068 Stücke:
Lieferzeit 14-21 Tag (e)
DMT10H009LK3-13Diodes IncN-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
DMT10H009LK3-13Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
auf Bestellung 1559920 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.78 EUR
12+ 2.29 EUR
100+ 1.78 EUR
500+ 1.51 EUR
1000+ 1.23 EUR
Mindestbestellmenge: 10
DMT10H009LPSDiodes IncorporatedMOSFET
Produkt ist nicht verfügbar
DMT10H009LPS-13Diodes IncorporatedDescription: MOSFET N-CH 100V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
auf Bestellung 69659 Stücke:
Lieferzeit 21-28 Tag (e)
12+2.21 EUR
15+ 1.8 EUR
100+ 1.4 EUR
500+ 1.19 EUR
1000+ 0.97 EUR
Mindestbestellmenge: 12
DMT10H009LPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 360A; 2.9W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 12.5mΩ
Drain current: 8A
Power dissipation: 2.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 40.2nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
Produkt ist nicht verfügbar
DMT10H009LPS-13Diodes IncTrans MOSFET N-CH 100V 10A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT10H009LPS-13Diodes IncorporatedDescription: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
auf Bestellung 67500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.91 EUR
5000+ 0.87 EUR
12500+ 0.83 EUR
25000+ 0.82 EUR
Mindestbestellmenge: 2500
DMT10H009LPS-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V
auf Bestellung 1493 Stücke:
Lieferzeit 14-28 Tag (e)
24+2.23 EUR
29+ 1.81 EUR
100+ 1.41 EUR
500+ 1.2 EUR
1000+ 1.02 EUR
2500+ 0.87 EUR
Mindestbestellmenge: 24
DMT10H009LPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 360A; 2.9W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 12.5mΩ
Drain current: 8A
Power dissipation: 2.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 40.2nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT10H009LPS-13Diodes ZetexTrans MOSFET N-CH 100V 10A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT10H009LSS-13Diodes IncTrans MOSFET N-CH 100V 13A 8-Pin SO T/R
Produkt ist nicht verfügbar
DMT10H009LSS-13Diodes IncorporatedDescription: MOSFET N-CH 100V 13A/48A 8SO T&R
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
auf Bestellung 149940 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.65 EUR
13+ 2.15 EUR
100+ 1.68 EUR
500+ 1.42 EUR
1000+ 1.16 EUR
Mindestbestellmenge: 10
DMT10H009LSS-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V
Produkt ist nicht verfügbar
DMT10H009LSS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 110A; 2.5W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 13.8mΩ
Drain current: 10A
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 40.2nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 110A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT10H009LSS-13Diodes ZetexTrans MOSFET N-CH 100V 13A 8-Pin SO T/R
Produkt ist nicht verfügbar
DMT10H009LSS-13Diodes IncorporatedDescription: MOSFET N-CH 100V 13A/48A 8SO T&R
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
auf Bestellung 147500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.09 EUR
5000+ 1.04 EUR
12500+ 0.99 EUR
Mindestbestellmenge: 2500
DMT10H009LSS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 110A; 2.5W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 13.8mΩ
Drain current: 10A
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 40.2nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 110A
Produkt ist nicht verfügbar
DMT10H009LSS-13Diodes ZetexTrans MOSFET N-CH 100V 13A 8-Pin SO T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
113+1.39 EUR
132+ 1.14 EUR
162+ 0.9 EUR
500+ 0.75 EUR
1000+ 0.6 EUR
2500+ 0.54 EUR
Mindestbestellmenge: 113
DMT10H009LSSQ-13Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V SO-8 T&R
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.08 EUR
5000+ 1.02 EUR
Mindestbestellmenge: 2500
DMT10H009LSSQ-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V SO-8 T&R 2.5K
Produkt ist nicht verfügbar
DMT10H009SCG-13Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V V-DFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H009SCG-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V V-DFN3333-8 T&R 3K
Produkt ist nicht verfügbar
DMT10H009SCG-7Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V V-DFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H009SCG-7Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V V-DFN3333-8 T&R 2K
auf Bestellung 2000 Stücke:
Lieferzeit 14-28 Tag (e)
24+2.23 EUR
29+ 1.81 EUR
100+ 1.41 EUR
500+ 1.2 EUR
1000+ 1.03 EUR
2000+ 0.87 EUR
Mindestbestellmenge: 24
DMT10H009SK3-13DIODES INC.Description: DIODES INC. - DMT10H009SK3-13 - Leistungs-MOSFET, n-Kanal, 100 V, 91 A, 0.0069 ohm, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 91A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 1.7W
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0069ohm
auf Bestellung 3041 Stücke:
Lieferzeit 14-21 Tag (e)
DMT10H009SK3-13DIODES INC.Description: DIODES INC. - DMT10H009SK3-13 - Leistungs-MOSFET, n-Kanal, 100 V, 91 A, 0.0069 ohm, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 91A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 1.7W
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0069ohm
auf Bestellung 3041 Stücke:
Lieferzeit 14-21 Tag (e)
DMT10H009SK3-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 360A; 3.2W; TO252
Mounting: SMD
Case: TO252
Type of transistor: N-MOSFET
On-state resistance: 9.1mΩ
Drain current: 75A
Power dissipation: 3.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 34nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
Produkt ist nicht verfügbar
DMT10H009SK3-13Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2028 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H009SK3-13Diodes IncMOSFET BVDSS: 61V100V TO252 T&R 2.5K
Produkt ist nicht verfügbar
DMT10H009SK3-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V TO252 T&R 2.5K
Produkt ist nicht verfügbar
DMT10H009SK3-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 360A; 3.2W; TO252
Mounting: SMD
Case: TO252
Type of transistor: N-MOSFET
On-state resistance: 9.1mΩ
Drain current: 75A
Power dissipation: 3.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 34nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT10H009SPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 320A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Pulsed drain current: 320A
Power dissipation: 2.7W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMT10H009SPS-13Diodes ZetexTrans MOSFET N-CH 100V 14A 8-Pin PowerDI EP T/R
auf Bestellung 282500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.54 EUR
Mindestbestellmenge: 2500
DMT10H009SPS-13Diodes IncorporatedDescription: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
auf Bestellung 275000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.91 EUR
5000+ 0.87 EUR
12500+ 0.83 EUR
25000+ 0.82 EUR
Mindestbestellmenge: 2500
DMT10H009SPS-13Diodes IncTrans MOSFET N-CH 100V 14A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT10H009SPS-13Diodes IncorporatedMOSFET MOSFET BVDSS 61V-100V
auf Bestellung 20362 Stücke:
Lieferzeit 14-28 Tag (e)
24+2.23 EUR
29+ 1.81 EUR
100+ 1.41 EUR
500+ 1.2 EUR
1000+ 0.98 EUR
2500+ 0.94 EUR
5000+ 0.89 EUR
Mindestbestellmenge: 24
DMT10H009SPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 320A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Pulsed drain current: 320A
Power dissipation: 2.7W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT10H009SPS-13Diodes ZetexTrans MOSFET N-CH 100V 14A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT10H009SPS-13Diodes IncorporatedDescription: MOSFET N-CH 100V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
auf Bestellung 277026 Stücke:
Lieferzeit 21-28 Tag (e)
12+2.21 EUR
15+ 1.8 EUR
100+ 1.4 EUR
500+ 1.19 EUR
1000+ 0.97 EUR
Mindestbestellmenge: 12
DMT10H009SPS-13 транзистор
Produktcode: 197183		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
DMT10H009SSS-13Diodes IncorporatedDescription: MOSFET BVDSS: 61V-100V SO-8 T&R
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
auf Bestellung 25000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.09 EUR
5000+ 1.04 EUR
12500+ 0.99 EUR
Mindestbestellmenge: 2500
DMT10H009SSS-13Diodes ZetexN-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
DMT10H009SSS-13Diodes IncN-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
DMT10H010LCTDiodes IncorporatedDescription: MOSFET N-CH 100V 98A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Power Dissipation (Max): 2W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
auf Bestellung 12433 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.93 EUR
50+ 3.14 EUR
100+ 2.58 EUR
500+ 2.18 EUR
1000+ 1.85 EUR
2000+ 1.76 EUR
5000+ 1.69 EUR
10000+ 1.64 EUR
Mindestbestellmenge: 7
DMT10H010LCTDiodes ZetexTrans MOSFET N-CH 100V 98A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
200+1.07 EUR
Mindestbestellmenge: 200
DMT10H010LCTDIODES INCORPORATEDCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; Idm: 92A; 139W; TO220AB
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
On-state resistance: 6.9mΩ
Drain current: 62A
Power dissipation: 139W
Polarisation: unipolar
Kind of package: tube
Gate charge: 58.4nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 92A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMT10H010LCTDiodes ZetexTrans MOSFET N-CH 100V 98A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
108+1.45 EUR
119+ 1.28 EUR
Mindestbestellmenge: 108
DMT10H010LCTDiodes IncTrans MOSFET N-CH 100V 98A 3-Pin(3+Tab) TO-220AB Tube
Produkt ist nicht verfügbar
DMT10H010LCTDiodes ZetexTrans MOSFET N-CH 100V 98A 3-Pin(3+Tab) TO-220AB Tube
Produkt ist nicht verfügbar
DMT10H010LCTDIODES INCORPORATEDCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; Idm: 92A; 139W; TO220AB
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
On-state resistance: 6.9mΩ
Drain current: 62A
Power dissipation: 139W
Polarisation: unipolar
Kind of package: tube
Gate charge: 58.4nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 92A
Produkt ist nicht verfügbar
DMT10H010LCTDiodes IncorporatedMOSFET 100V N-Ch Enh FET 9.5mOHm 10V 98A
auf Bestellung 92 Stücke:
Lieferzeit 14-28 Tag (e)
14+3.95 EUR
16+ 3.38 EUR
100+ 2.59 EUR
250+ 2.54 EUR
500+ 2.23 EUR
1000+ 1.88 EUR
Mindestbestellmenge: 14
DMT10H010LCTDiodes ZetexTrans MOSFET N-CH 100V 98A 3-Pin(3+Tab) TO-220AB Tube
Produkt ist nicht verfügbar
DMT10H010LK3-13Diodes IncTrans MOSFET N-CH 100V 68.8A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
DMT10H010LK3-13Diodes IncorporatedDescription: MOSFET N-CH 100V 68.8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68.8A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 50 V
auf Bestellung 159269 Stücke:
Lieferzeit 21-28 Tag (e)
9+2.94 EUR
11+ 2.4 EUR
100+ 1.87 EUR
500+ 1.59 EUR
1000+ 1.29 EUR
Mindestbestellmenge: 9
DMT10H010LK3-13Diodes ZetexTrans MOSFET N-CH 100V 68.8A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
DMT10H010LK3-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 275A; 3W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Pulsed drain current: 275A
Power dissipation: 3W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 53.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMT10H010LK3-13Diodes IncorporatedMOSFET MOSFET BVDSS 61V-100V
auf Bestellung 39311 Stücke:
Lieferzeit 14-28 Tag (e)
18+2.94 EUR
22+ 2.44 EUR
100+ 1.88 EUR
500+ 1.6 EUR
1000+ 1.3 EUR
2500+ 1.21 EUR
5000+ 1.16 EUR
Mindestbestellmenge: 18
DMT10H010LK3-13Diodes IncorporatedDescription: MOSFET N-CH 100V 68.8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68.8A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 50 V
auf Bestellung 157500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.22 EUR
5000+ 1.16 EUR
12500+ 1.1 EUR
Mindestbestellmenge: 2500
DMT10H010LK3-13Diodes ZetexTrans MOSFET N-CH 100V 68.8A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
DMT10H010LK3-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 275A; 3W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Pulsed drain current: 275A
Power dissipation: 3W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 53.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT10H010LPS-13Diodes IncorporatedMOSFET 100V N-Ch Enh FET Low Rdson
auf Bestellung 20077 Stücke:
Lieferzeit 14-28 Tag (e)
15+3.69 EUR
18+ 3.02 EUR
100+ 2.37 EUR
500+ 2.01 EUR
1000+ 1.62 EUR
2500+ 1.6 EUR
Mindestbestellmenge: 15
DMT10H010LPS-13Diodes ZetexTrans MOSFET N-CH 100V 9.4A 8-Pin PowerDI EP T/R
auf Bestellung 6667 Stücke:
Lieferzeit 14-21 Tag (e)
93+1.7 EUR
105+ 1.44 EUR
106+ 1.38 EUR
124+ 1.13 EUR
250+ 1.07 EUR
500+ 0.91 EUR
1000+ 0.73 EUR
Mindestbestellmenge: 93
DMT10H010LPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 98A; 1.2W; PowerDI®5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 98A
Power dissipation: 1.2W
Case: PowerDI®5060-8
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMT10H010LPS-13Diodes IncorporatedDescription: MOSFET N-CH 100V 9.4A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Power Dissipation (Max): 1.2W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
auf Bestellung 16164 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.69 EUR
10+ 3.02 EUR
100+ 2.35 EUR
500+ 1.99 EUR
1000+ 1.62 EUR
Mindestbestellmenge: 8
DMT10H010LPS-13Diodes ZetexTrans MOSFET N-CH 100V 9.4A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT10H010LPS-13Diodes IncTrans MOSFET N-CH 100V 9.4A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT10H010LPS-13Diodes IncorporatedDescription: MOSFET N-CH 100V 9.4A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Power Dissipation (Max): 1.2W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
auf Bestellung 12500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.53 EUR
5000+ 1.46 EUR
12500+ 1.39 EUR
Mindestbestellmenge: 2500
DMT10H010LPS-13Diodes ZetexTrans MOSFET N-CH 100V 9.4A 8-Pin PowerDI EP T/R
auf Bestellung 6667 Stücke:
Lieferzeit 14-21 Tag (e)
105+1.5 EUR
106+ 1.43 EUR
124+ 1.17 EUR
250+ 1.12 EUR
500+ 0.95 EUR
1000+ 0.76 EUR
3000+ 0.73 EUR
Mindestbestellmenge: 105
DMT10H010LPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 98A; 1.2W; PowerDI®5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 98A
Power dissipation: 1.2W
Case: PowerDI®5060-8
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMT10H010LSS-13Diodes IncTrans MOSFET N-CH 100V 11.5A 8-Pin SO T/R
Produkt ist nicht verfügbar
DMT10H010LSS-13Diodes ZetexTrans MOSFET N-CH 100V 11.5A 8-Pin SO T/R
Produkt ist nicht verfügbar
DMT10H010LSS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.2A; Idm: 75A; 1.9W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 14.5mΩ
Drain current: 9.2A
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 58.4nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 75A
Produkt ist nicht verfügbar
DMT10H010LSS-13Diodes IncorporatedDescription: MOSFET N-CH 100V 11.5A/29.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 29.5A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
auf Bestellung 127130 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.41 EUR
10+ 2.78 EUR
100+ 2.17 EUR
500+ 1.84 EUR
1000+ 1.5 EUR
Mindestbestellmenge: 8
DMT10H010LSS-13Diodes IncorporatedMOSFET MOSFET BVDSS
auf Bestellung 4851 Stücke:
Lieferzeit 14-28 Tag (e)
16+3.43 EUR
19+ 2.81 EUR
100+ 2.18 EUR
500+ 1.85 EUR
1000+ 1.51 EUR
2500+ 1.47 EUR
Mindestbestellmenge: 16
DMT10H010LSS-13Diodes ZetexTrans MOSFET N-CH 100V 11.5A 8-Pin SO T/R
Produkt ist nicht verfügbar
DMT10H010LSS-13Diodes ZetexTrans MOSFET N-CH 100V 11.5A 8-Pin SO T/R
Produkt ist nicht verfügbar
DMT10H010LSS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.2A; Idm: 75A; 1.9W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 14.5mΩ
Drain current: 9.2A
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 58.4nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 75A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT10H010LSS-13Diodes IncorporatedDescription: MOSFET N-CH 100V 11.5A/29.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 29.5A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
auf Bestellung 125000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.41 EUR
5000+ 1.34 EUR
12500+ 1.28 EUR
Mindestbestellmenge: 2500
DMT10H010LSSQ-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V SO-8 T&R 2.5K
Produkt ist nicht verfügbar
DMT10H010LSSQ-13Diodes ZetexMOSFET BVDSS: 61V100V SO-8 T&R 2.5K
Produkt ist nicht verfügbar
DMT10H010SPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.6A; Idm: 250A; 1.2W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 11.5mΩ
Drain current: 8.6A
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 56.4nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 250A
Produkt ist nicht verfügbar
DMT10H010SPS-13Diodes IncorporatedDescription: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 113A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V
auf Bestellung 2400 Stücke:
Lieferzeit 21-28 Tag (e)
DMT10H010SPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.6A; Idm: 250A; 1.2W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 11.5mΩ
Drain current: 8.6A
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 56.4nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 250A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT10H010SPS-13Diodes IncorporatedDescription: MOSFET N-CH 100V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 113A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V
auf Bestellung 2400 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.86 EUR
12+ 2.34 EUR
100+ 1.82 EUR
500+ 1.54 EUR
1000+ 1.26 EUR
Mindestbestellmenge: 10
DMT10H010SPS-13Diodes IncTrans MOSFET N-CH 100V 10.7A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT10H010SPS-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V
auf Bestellung 2462 Stücke:
Lieferzeit 14-28 Tag (e)
19+2.89 EUR
23+ 2.36 EUR
100+ 1.83 EUR
500+ 1.55 EUR
1000+ 1.26 EUR
2500+ 1.23 EUR
Mindestbestellmenge: 19
DMT10H014LSS-13Diodes ZetexTrans MOSFET N-CH 100V 8.9A 8-Pin SO T/R
Produkt ist nicht verfügbar
DMT10H014LSS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.1A; Idm: 54A; 1.67W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 25mΩ
Drain current: 7.1A
Power dissipation: 1.67W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 54A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT10H014LSS-13Diodes IncorporatedDescription: MOSFET N-CH 100V 8.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.18 EUR
5000+ 1.13 EUR
Mindestbestellmenge: 2500
DMT10H014LSS-13Diodes IncTrans MOSFET N-CH 100V 8.9A 8-Pin SO T/R
Produkt ist nicht verfügbar
DMT10H014LSS-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V
auf Bestellung 3287 Stücke:
Lieferzeit 14-28 Tag (e)
19+2.86 EUR
23+ 2.35 EUR
100+ 1.83 EUR
500+ 1.55 EUR
1000+ 1.26 EUR
2500+ 1.23 EUR
Mindestbestellmenge: 19
DMT10H014LSS-13Diodes ZetexTrans MOSFET N-CH 100V 8.9A 8-Pin SO T/R
Produkt ist nicht verfügbar
DMT10H014LSS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.1A; Idm: 54A; 1.67W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 25mΩ
Drain current: 7.1A
Power dissipation: 1.67W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 54A
Produkt ist nicht verfügbar
DMT10H014LSS-13Diodes IncorporatedDescription: MOSFET N-CH 100V 8.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14780 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.86 EUR
12+ 2.34 EUR
100+ 1.82 EUR
500+ 1.54 EUR
1000+ 1.26 EUR
Mindestbestellmenge: 10
DMT10H015LCG-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V
Produkt ist nicht verfügbar
DMT10H015LCG-13Diodes ZetexTrans MOSFET N-CH 100V 9.4A 8-Pin VDFN EP T/R
Produkt ist nicht verfügbar
DMT10H015LCG-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 54A; 2.1W
Mounting: SMD
Case: V-DFN3333-8
Type of transistor: N-MOSFET
On-state resistance: 26mΩ
Drain current: 7.5A
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 54A
Produkt ist nicht verfügbar
DMT10H015LCG-13Diodes IncorporatedDescription: MOSFET N-CH 100V 9.4A/34A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: V-DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 24000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.94 EUR
6000+ 0.89 EUR
9000+ 0.85 EUR
Mindestbestellmenge: 3000
DMT10H015LCG-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 54A; 2.1W
Mounting: SMD
Case: V-DFN3333-8
Type of transistor: N-MOSFET
On-state resistance: 26mΩ
Drain current: 7.5A
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 54A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMT10H015LCG-13Diodes ZetexTrans MOSFET N-CH 100V 9.4A 8-Pin VDFN EP T/R
Produkt ist nicht verfügbar
DMT10H015LCG-13Diodes IncTrans MOSFET N-CH 100V 9.4A 8-Pin VDFN EP T/R
Produkt ist nicht verfügbar
DMT10H015LCG-7Diodes ZetexTrans MOSFET N-CH 100V 9.4A 8-Pin VDFN EP T/R
Produkt ist nicht verfügbar
DMT10H015LCG-7Diodes IncorporatedDescription: MOSFET N-CH 100V 9.4A/34A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: V-DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+0.94 EUR
6000+ 0.89 EUR
10000+ 0.85 EUR
Mindestbestellmenge: 2000
DMT10H015LCG-7DIODES INC.Description: DIODES INC. - DMT10H015LCG-7 - Leistungs-MOSFET, n-Kanal, 100 V, 34 A, 0.0121 ohm, VDFN3333, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 34A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 1W
Bauform - Transistor: VDFN3333
Anzahl der Pins: 8Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0121ohm
auf Bestellung 2879 Stücke:
Lieferzeit 14-21 Tag (e)
DMT10H015LCG-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 54A; 2.1W
Mounting: SMD
Case: V-DFN3333-8
Type of transistor: N-MOSFET
On-state resistance: 26mΩ
Drain current: 7.5A
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 54A
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
DMT10H015LCG-7Diodes ZetexTrans MOSFET N-CH 100V 9.4A 8-Pin VDFN EP T/R
Produkt ist nicht verfügbar
DMT10H015LCG-7Diodes IncTrans MOSFET N-CH 100V 9.4A 8-Pin VDFN EP T/R
Produkt ist nicht verfügbar
DMT10H015LCG-7DIODES INC.Description: DIODES INC. - DMT10H015LCG-7 - Leistungs-MOSFET, n-Kanal, 100 V, 34 A, 0.0121 ohm, VDFN3333, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 34A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 1W
Bauform - Transistor: VDFN3333
Anzahl der Pins: 8Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0121ohm
auf Bestellung 2879 Stücke:
Lieferzeit 14-21 Tag (e)
DMT10H015LCG-7Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V
auf Bestellung 62069 Stücke:
Lieferzeit 14-28 Tag (e)
23+2.27 EUR
28+ 1.87 EUR
100+ 1.45 EUR
500+ 1.23 EUR
1000+ 1 EUR
2000+ 0.92 EUR
4000+ 0.89 EUR
Mindestbestellmenge: 23
DMT10H015LCG-7Diodes IncorporatedDescription: MOSFET N-CH 100V 9.4A/34A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: V-DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 19980 Stücke:
Lieferzeit 21-28 Tag (e)
12+2.26 EUR
15+ 1.86 EUR
100+ 1.44 EUR
500+ 1.22 EUR
1000+ 1 EUR
Mindestbestellmenge: 12
DMT10H015LCG-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 54A; 2.1W
Mounting: SMD
Case: V-DFN3333-8
Type of transistor: N-MOSFET
On-state resistance: 26mΩ
Drain current: 7.5A
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 54A
Produkt ist nicht verfügbar
DMT10H015LFG-13Diodes IncTrans MOSFET N-CH 100V 10A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT10H015LFG-13Diodes IncorporatedMOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W
Produkt ist nicht verfügbar
DMT10H015LFG-13Diodes IncorporatedDescription: MOSFET N-CH 100V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+1.04 EUR
6000+ 0.99 EUR
9000+ 0.95 EUR
Mindestbestellmenge: 3000
DMT10H015LFG-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 75A; 2W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: N-MOSFET
On-state resistance: 23.5mΩ
Drain current: 8A
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 75A
Produkt ist nicht verfügbar
DMT10H015LFG-13Diodes ZetexTrans MOSFET N-CH 100V 10A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT10H015LFG-13Diodes IncorporatedDescription: MOSFET N-CH 100V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.52 EUR
13+ 2.06 EUR
100+ 1.6 EUR
500+ 1.36 EUR
1000+ 1.11 EUR
Mindestbestellmenge: 11
DMT10H015LFG-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 75A; 2W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: N-MOSFET
On-state resistance: 23.5mΩ
Drain current: 8A
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 75A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMT10H015LFG-7Diodes ZetexTrans MOSFET N-CH 100V 10A 8-Pin PowerDI EP T/R
auf Bestellung 1576 Stücke:
Lieferzeit 14-21 Tag (e)
121+1.3 EUR
122+ 1.24 EUR
159+ 0.92 EUR
250+ 0.88 EUR
500+ 0.72 EUR
1000+ 0.54 EUR
Mindestbestellmenge: 121
DMT10H015LFG-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 75A; 2W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: N-MOSFET
On-state resistance: 23.5mΩ
Drain current: 8A
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 75A
Produkt ist nicht verfügbar
DMT10H015LFG-7Diodes IncorporatedDescription: MOSFET N-CH 100V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 37110 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.52 EUR
13+ 2.06 EUR
100+ 1.6 EUR
500+ 1.36 EUR
1000+ 1.11 EUR
Mindestbestellmenge: 11
DMT10H015LFG-7Diodes ZetexTrans MOSFET N-CH 100V 10A 8-Pin PowerDI EP T/R
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
115+1.37 EUR
116+ 1.31 EUR
136+ 1.07 EUR
250+ 1.02 EUR
500+ 0.84 EUR
1000+ 0.6 EUR
Mindestbestellmenge: 115
DMT10H015LFG-7Diodes ZetexTrans MOSFET N-CH 100V 10A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT10H015LFG-7Diodes IncorporatedDescription: MOSFET N-CH 100V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 34000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+1.04 EUR
6000+ 0.99 EUR
10000+ 0.95 EUR
Mindestbestellmenge: 2000
DMT10H015LFG-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 75A; 2W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: N-MOSFET
On-state resistance: 23.5mΩ
Drain current: 8A
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 75A
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
DMT10H015LFG-7Diodes IncTrans MOSFET N-CH 100V 10A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT10H015LFG-7Diodes ZetexTrans MOSFET N-CH 100V 10A 8-Pin PowerDI EP T/R
auf Bestellung 1576 Stücke:
Lieferzeit 14-21 Tag (e)
102+1.54 EUR
121+ 1.25 EUR
122+ 1.19 EUR
159+ 0.88 EUR
250+ 0.84 EUR
500+ 0.67 EUR
1000+ 0.52 EUR
Mindestbestellmenge: 102
DMT10H015LFG-7Diodes IncorporatedMOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W
auf Bestellung 5077 Stücke:
Lieferzeit 14-28 Tag (e)
22+2.44 EUR
26+ 2.05 EUR
100+ 1.59 EUR
500+ 1.34 EUR
1000+ 1.07 EUR
2000+ 1.05 EUR
4000+ 1 EUR
Mindestbestellmenge: 22
DMT10H015LK3-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42.1A; Idm: 210A; 2.9W; TO252
Mounting: SMD
Case: TO252
Type of transistor: N-MOSFET
On-state resistance: 25mΩ
Drain current: 42.1A
Power dissipation: 2.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 210A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT10H015LK3-13Diodes ZetexTrans MOSFET N-CH 100V 52.7A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
DMT10H015LK3-13Diodes IncorporatedDescription: MOSFET N-CHANNEL 100V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 2.9W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 13598 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.68 EUR
12+ 2.2 EUR
100+ 1.71 EUR
500+ 1.45 EUR
1000+ 1.18 EUR
Mindestbestellmenge: 10
DMT10H015LK3-13Diodes IncTrans MOSFET N-CH 100V 52.7A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
DMT10H015LK3-13DIODES INC.Description: DIODES INC. - DMT10H015LK3-13 - Leistungs-MOSFET, n-Kanal, 100 V, 52.7 A, 0.0107 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 52.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.5V
euEccn: NLR
Verlustleistung: 1.8W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pins
Produktpalette: PW Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0107ohm
SVHC: Lead (14-Jun-2023)
auf Bestellung 2480 Stücke:
Lieferzeit 14-21 Tag (e)
DMT10H015LK3-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V
auf Bestellung 4900 Stücke:
Lieferzeit 14-28 Tag (e)
20+2.7 EUR
24+ 2.22 EUR
100+ 1.72 EUR
500+ 1.46 EUR
1000+ 1.19 EUR
2500+ 1.12 EUR
5000+ 1.07 EUR
Mindestbestellmenge: 20
DMT10H015LK3-13Diodes ZetexTrans MOSFET N-CH 100V 52.7A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
DMT10H015LK3-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42.1A; Idm: 210A; 2.9W; TO252
Mounting: SMD
Case: TO252
Type of transistor: N-MOSFET
On-state resistance: 25mΩ
Drain current: 42.1A
Power dissipation: 2.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 210A
Produkt ist nicht verfügbar
DMT10H015LK3-13Diodes IncorporatedDescription: MOSFET N-CHANNEL 100V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 2.9W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 12500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.11 EUR
5000+ 1.06 EUR
12500+ 1.01 EUR
Mindestbestellmenge: 2500
DMT10H015LK3-13DIODES INC.Description: DIODES INC. - DMT10H015LK3-13 - Leistungs-MOSFET, n-Kanal, 100 V, 52.7 A, 0.0107 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 52.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.5V
euEccn: NLR
Verlustleistung: 1.8W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pins
Produktpalette: PW Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0107ohm
SVHC: Lead (14-Jun-2023)
auf Bestellung 2480 Stücke:
Lieferzeit 14-21 Tag (e)
DMT10H015LPSDiodes IncorporatedMOSFET
Produkt ist nicht verfügbar
DMT10H015LPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 150A; 2.4W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 25mΩ
Drain current: 8A
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Produkt ist nicht verfügbar
DMT10H015LPS-13Diodes ZetexTrans MOSFET N-CH 100V 7.3A 8-Pin PowerDI 5060 T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
91+1.73 EUR
102+ 1.48 EUR
103+ 1.41 EUR
134+ 1.05 EUR
250+ 1 EUR
500+ 0.78 EUR
1000+ 0.59 EUR
Mindestbestellmenge: 91
DMT10H015LPS-13Diodes IncorporatedDescription: MOSFET N-CH 100V 7.3A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 1342 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.55 EUR
13+ 2.09 EUR
100+ 1.62 EUR
500+ 1.37 EUR
1000+ 1.12 EUR
Mindestbestellmenge: 11
DMT10H015LPS-13Diodes IncorporatedMOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W
auf Bestellung 2490 Stücke:
Lieferzeit 14-28 Tag (e)
21+2.56 EUR
25+ 2.1 EUR
100+ 1.63 EUR
500+ 1.39 EUR
1000+ 1.13 EUR
2500+ 1.1 EUR
Mindestbestellmenge: 21
DMT10H015LPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 150A; 2.4W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 25mΩ
Drain current: 8A
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT10H015LPS-13Diodes ZetexTrans MOSFET N-CH 100V 7.3A 8-Pin PowerDI 5060 T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
102+1.53 EUR
103+ 1.46 EUR
134+ 1.09 EUR
250+ 1.04 EUR
500+ 0.82 EUR
1000+ 0.62 EUR
Mindestbestellmenge: 102
DMT10H015LPS-13Diodes IncorporatedDescription: MOSFET N-CH 100V 7.3A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H015LPS-13Diodes IncTrans MOSFET N-CH 100V 7.3A 8-Pin PowerDI 5060 T/R
Produkt ist nicht verfügbar
DMT10H015LPS-13Diodes ZetexTrans MOSFET N-CH 100V 7.3A 8-Pin PowerDI 5060 T/R
Produkt ist nicht verfügbar
DMT10H015LSS-13Diodes IncorporatedDescription: MOSFET N-CH 100V 8.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.07 EUR
5000+ 1.02 EUR
Mindestbestellmenge: 2500
DMT10H015LSS-13Diodes ZetexTrans MOSFET N-CH 100V 8.3A 8-Pin SO T/R
auf Bestellung 1895 Stücke:
Lieferzeit 14-21 Tag (e)
169+0.93 EUR
185+ 0.82 EUR
187+ 0.78 EUR
210+ 0.67 EUR
250+ 0.63 EUR
500+ 0.56 EUR
1000+ 0.51 EUR
Mindestbestellmenge: 169
DMT10H015LSS-13Diodes IncorporatedMOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W
auf Bestellung 3104 Stücke:
Lieferzeit 14-28 Tag (e)
26+2.03 EUR
31+ 1.72 EUR
100+ 1.41 EUR
500+ 1.24 EUR
1000+ 1.08 EUR
2500+ 1.02 EUR
Mindestbestellmenge: 26
DMT10H015LSS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.7A; Idm: 54A; 1.67W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 25mΩ
Drain current: 6.7A
Power dissipation: 1.67W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 54A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT10H015LSS-13Diodes IncTrans MOSFET N-CH 100V 8.3A 8-Pin SO T/R
Produkt ist nicht verfügbar
DMT10H015LSS-13Diodes ZetexTrans MOSFET N-CH 100V 8.3A 8-Pin SO T/R
auf Bestellung 1895 Stücke:
Lieferzeit 14-21 Tag (e)
178+0.88 EUR
180+ 0.84 EUR
203+ 0.72 EUR
250+ 0.68 EUR
500+ 0.6 EUR
1000+ 0.53 EUR
Mindestbestellmenge: 178
DMT10H015LSS-13Diodes IncorporatedDescription: MOSFET N-CH 100V 8.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 6720 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.6 EUR
13+ 2.12 EUR
100+ 1.65 EUR
500+ 1.4 EUR
1000+ 1.14 EUR
Mindestbestellmenge: 10
DMT10H015LSS-13Diodes ZetexTrans MOSFET N-CH 100V 8.3A 8-Pin SO T/R
Produkt ist nicht verfügbar
DMT10H015LSS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.7A; Idm: 54A; 1.67W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 25mΩ
Drain current: 6.7A
Power dissipation: 1.67W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 54A
Produkt ist nicht verfügbar
DMT10H015SK3-13Diodes Inc100V N-CHANNEL ENHANCEMENT MODE MOSFET
Produkt ist nicht verfügbar
DMT10H015SK3-13Diodes IncorporatedDescription: MOSFET N-CH 100V 54A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
auf Bestellung 122500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.97 EUR
5000+ 0.93 EUR
12500+ 0.89 EUR
25000+ 0.88 EUR
Mindestbestellmenge: 2500
DMT10H015SK3-13Diodes Zetex100V N-CHANNEL ENHANCEMENT MODE MOSFET
auf Bestellung 125000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.57 EUR
Mindestbestellmenge: 2500
DMT10H015SK3-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 215A; 2.9W; TO252
Mounting: SMD
Case: TO252
Type of transistor: N-MOSFET
On-state resistance: 11.1mΩ
Drain current: 43A
Power dissipation: 2.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30.1nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 215A
auf Bestellung 1101 Stücke:
Lieferzeit 14-21 Tag (e)
64+1.13 EUR
95+ 0.76 EUR
109+ 0.66 EUR
117+ 0.61 EUR
125+ 0.57 EUR
500+ 0.56 EUR
Mindestbestellmenge: 64
DMT10H015SK3-13Diodes IncorporatedMOSFET MOSFET BVDSS 61V-100V
Produkt ist nicht verfügbar
DMT10H015SK3-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 215A; 2.9W; TO252
Mounting: SMD
Case: TO252
Type of transistor: N-MOSFET
On-state resistance: 11.1mΩ
Drain current: 43A
Power dissipation: 2.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30.1nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 215A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1101 Stücke:
Lieferzeit 7-14 Tag (e)
64+1.13 EUR
95+ 0.76 EUR
109+ 0.66 EUR
117+ 0.61 EUR
125+ 0.57 EUR
500+ 0.56 EUR
Mindestbestellmenge: 64
DMT10H015SK3-13Diodes Zetex100V N-CHANNEL ENHANCEMENT MODE MOSFET
Produkt ist nicht verfügbar
DMT10H015SPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.1A; Idm: 120A; 1.3W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 19.5mΩ
Drain current: 6.1A
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30.1nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Produkt ist nicht verfügbar
DMT10H015SPS-13Diodes Zetex100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
Produkt ist nicht verfügbar
DMT10H015SPS-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V
Produkt ist nicht verfügbar
DMT10H015SPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.1A; Idm: 120A; 1.3W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 19.5mΩ
Drain current: 6.1A
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30.1nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT10H015SPS-13Diodes Zetex100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.53 EUR
Mindestbestellmenge: 2500
DMT10H015SPS-13Diodes Inc100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
Produkt ist nicht verfügbar
DMT10H015SPS-13Diodes IncorporatedDescription: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.89 EUR
5000+ 0.85 EUR
12500+ 0.81 EUR
Mindestbestellmenge: 2500
DMT10H017LPD-13Diodes IncorporatedDescription: MOSFET 2N-CH 100V 54.7A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W (Ta), 78W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 54.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 59975 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.95 EUR
10+ 3.24 EUR
100+ 2.52 EUR
500+ 2.14 EUR
1000+ 1.74 EUR
Mindestbestellmenge: 7
DMT10H017LPD-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43.7A; Idm: 60A; 2.2W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 30.3mΩ
Drain current: 43.7A
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28.6nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT10H017LPD-13Diodes IncTrans MOSFET N-CH 100V 54.7A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT10H017LPD-13Diodes IncorporatedDescription: MOSFET 2N-CH 100V 54.7A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W (Ta), 78W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 54.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 57500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.64 EUR
5000+ 1.56 EUR
12500+ 1.49 EUR
Mindestbestellmenge: 2500
DMT10H017LPD-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43.7A; Idm: 60A; 2.2W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 30.3mΩ
Drain current: 43.7A
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28.6nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Produkt ist nicht verfügbar
DMT10H017LPD-13Diodes ZetexTrans MOSFET N-CH 100V 54.7A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT10H017LPD-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V PowerDI5060-8 T&R 2.5K
auf Bestellung 2285 Stücke:
Lieferzeit 14-28 Tag (e)
14+3.98 EUR
16+ 3.28 EUR
100+ 2.56 EUR
500+ 2.16 EUR
1000+ 1.75 EUR
2500+ 1.65 EUR
5000+ 1.57 EUR
Mindestbestellmenge: 14
DMT10H025LK3-13Diodes IncorporatedDescription: MOSFET N-CH 100V 47.2A TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1477 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)
14+1.87 EUR
17+ 1.62 EUR
100+ 1.12 EUR
500+ 0.94 EUR
1000+ 0.8 EUR
Mindestbestellmenge: 14
DMT10H025LK3-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 37.7A; Idm: 185A; 2.6W; TO252
Mounting: SMD
Case: TO252
Type of transistor: N-MOSFET
On-state resistance: 43.7mΩ
Drain current: 37.7A
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 185A
Produkt ist nicht verfügbar
DMT10H025LK3-13Diodes ZetexTrans MOSFET N-CH 100V 47.2A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
DMT10H025LK3-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V
auf Bestellung 2264 Stücke:
Lieferzeit 14-28 Tag (e)
28+1.88 EUR
32+ 1.66 EUR
100+ 1.13 EUR
500+ 0.95 EUR
1000+ 0.81 EUR
2500+ 0.68 EUR
5000+ 0.66 EUR
Mindestbestellmenge: 28
DMT10H025LK3-13DIODES INC.Description: DIODES INC. - DMT10H025LK3-13 - Leistungs-MOSFET, n-Kanal, 100 V, 47.2 A, 0.0171 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 47.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 2.6W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pins
Produktpalette: PW Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0171ohm
SVHC: Lead (23-Jan-2024)
auf Bestellung 2480 Stücke:
Lieferzeit 14-21 Tag (e)
DMT10H025LK3-13Diodes IncorporatedDescription: MOSFET N-CH 100V 47.2A TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1477 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.71 EUR
5000+ 0.67 EUR
Mindestbestellmenge: 2500
DMT10H025LK3-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 37.7A; Idm: 185A; 2.6W; TO252
Mounting: SMD
Case: TO252
Type of transistor: N-MOSFET
On-state resistance: 43.7mΩ
Drain current: 37.7A
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 185A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT10H025LK3-13Diodes IncTrans MOSFET N-CH 100V 47.2A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
DMT10H025LK3-13DIODES INC.Description: DIODES INC. - DMT10H025LK3-13 - Leistungs-MOSFET, n-Kanal, 100 V, 47.2 A, 0.0171 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 47.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 2.6W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pins
Produktpalette: PW Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0171ohm
SVHC: Lead (23-Jan-2024)
auf Bestellung 2480 Stücke:
Lieferzeit 14-21 Tag (e)
DMT10H025LSS-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V SO-8 T&R 2.5K
Produkt ist nicht verfügbar
DMT10H025LSS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.7A; Idm: 60A; 1.9W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 45mΩ
Drain current: 5.7A
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22.9nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT10H025LSS-13Diodes IncMOSFET BVDSS: 61V100V SO-8 T&R 2.5K
Produkt ist nicht verfügbar
DMT10H025LSS-13Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V SO-8 T&R
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 12.9W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1639 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H025LSS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.7A; Idm: 60A; 1.9W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 45mΩ
Drain current: 5.7A
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22.9nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Produkt ist nicht verfügbar
DMT10H025SK3-13Diodes IncorporatedDescription: MOSFET N-CH 100V 41.2A TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.2A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 17500 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.48 EUR
21+ 1.28 EUR
100+ 0.89 EUR
500+ 0.74 EUR
1000+ 0.63 EUR
Mindestbestellmenge: 18
DMT10H025SK3-13Diodes IncTrans MOSFET N-CH 100V 41.2A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
DMT10H025SK3-13DIODES INC.Description: DIODES INC. - DMT10H025SK3-13 - Leistungs-MOSFET, n-Kanal, 100 V, 41.2 A, 0.0178 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 41.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 1.4W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pins
Produktpalette: PW Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0178ohm
SVHC: Lead (23-Jan-2024)
auf Bestellung 2465 Stücke:
Lieferzeit 14-21 Tag (e)
DMT10H025SK3-13Diodes IncorporatedDescription: MOSFET N-CH 100V 41.2A TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.2A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 17500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.56 EUR
5000+ 0.53 EUR
12500+ 0.49 EUR
Mindestbestellmenge: 2500
DMT10H025SK3-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32.9A; Idm: 160A; 2.5W; TO252
Mounting: SMD
Case: TO252
Type of transistor: N-MOSFET
On-state resistance: 30mΩ
Drain current: 32.9A
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21.4nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Produkt ist nicht verfügbar
DMT10H025SK3-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V TO252 T&R 2.5K
auf Bestellung 5701 Stücke:
Lieferzeit 14-28 Tag (e)
35+1.5 EUR
41+ 1.29 EUR
100+ 0.89 EUR
500+ 0.75 EUR
1000+ 0.64 EUR
2500+ 0.57 EUR
5000+ 0.56 EUR
Mindestbestellmenge: 35
DMT10H025SK3-13DIODES INC.Description: DIODES INC. - DMT10H025SK3-13 - Leistungs-MOSFET, n-Kanal, 100 V, 41.2 A, 0.0178 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 41.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 1.4W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pins
Produktpalette: PW Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0178ohm
SVHC: Lead (23-Jan-2024)
auf Bestellung 2465 Stücke:
Lieferzeit 14-21 Tag (e)
DMT10H025SK3-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32.9A; Idm: 160A; 2.5W; TO252
Mounting: SMD
Case: TO252
Type of transistor: N-MOSFET
On-state resistance: 30mΩ
Drain current: 32.9A
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21.4nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT10H025SK3-13Diodes ZetexTrans MOSFET N-CH 100V 41.2A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
DMT10H025SSS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.9A; Idm: 45A; 1.9W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 30mΩ
Drain current: 5.9A
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21.4nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 45A
Produkt ist nicht verfügbar
DMT10H025SSS-13Diodes IncorporatedDescription: MOSFET N-CH 100V 7.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V
auf Bestellung 13660 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.48 EUR
21+ 1.28 EUR
100+ 0.89 EUR
500+ 0.74 EUR
1000+ 0.63 EUR
Mindestbestellmenge: 18
DMT10H025SSS-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V
auf Bestellung 7400 Stücke:
Lieferzeit 14-28 Tag (e)
35+1.5 EUR
41+ 1.29 EUR
100+ 0.89 EUR
500+ 0.75 EUR
1000+ 0.64 EUR
2500+ 0.57 EUR
5000+ 0.56 EUR
Mindestbestellmenge: 35
DMT10H025SSS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.9A; Idm: 45A; 1.9W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 30mΩ
Drain current: 5.9A
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21.4nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 45A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT10H025SSS-13Diodes ZetexTrans MOSFET N-CH 100V 7.4A 8-Pin SO T/R
Produkt ist nicht verfügbar
DMT10H025SSS-13Diodes IncorporatedDescription: MOSFET N-CH 100V 7.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V
auf Bestellung 12500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.56 EUR
5000+ 0.53 EUR
12500+ 0.49 EUR
Mindestbestellmenge: 2500
DMT10H025SSS-13Diodes IncTrans MOSFET N-CH 100V 7.4A 8-Pin SO T/R
Produkt ist nicht verfügbar
DMT10H032LDV-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 75A; 2.4W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: N-MOSFET
On-state resistance: 50mΩ
Drain current: 15A
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11.9nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 75A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMT10H032LDV-13Diodes IncN-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
DMT10H032LDV-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 75A; 2.4W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: N-MOSFET
On-state resistance: 50mΩ
Drain current: 15A
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11.9nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 75A
Produkt ist nicht verfügbar
DMT10H032LDV-13Diodes IncorporatedDescription: MOSFET 2N-CH 100V 18A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Part Status: Active
Produkt ist nicht verfügbar
DMT10H032LDV-7Diodes IncorporatedDescription: MOSFET 2N-CH 100V 18A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+0.85 EUR
6000+ 0.81 EUR
10000+ 0.75 EUR
Mindestbestellmenge: 2000
DMT10H032LDV-7Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V PowerDI3333-8 T&R 2K
Produkt ist nicht verfügbar
DMT10H032LFDF-13Diodes IncMOSFET BVDSS: 61V100V U-DFN2020-6 T&R 10K
Produkt ist nicht verfügbar
DMT10H032LFDF-13Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H032LFDF-7Diodes Zetex100V N-Channel Enhancement Mode MOSFET
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.39 EUR
Mindestbestellmenge: 3000
DMT10H032LFDF-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 40A; 1.1W
Mounting: SMD
Case: U-DFN2020-6
Type of transistor: N-MOSFET
On-state resistance: 46mΩ
Drain current: 5A
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11.9nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Produkt ist nicht verfügbar
DMT10H032LFDF-7DIODES INC.Description: DIODES INC. - DMT10H032LFDF-7 - Leistungs-MOSFET, n-Kanal, 100 V, 6 A, 0.024 ohm, UDFN2020, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 1.3W
Bauform - Transistor: UDFN2020
Anzahl der Pins: 6Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.024ohm
auf Bestellung 1733 Stücke:
Lieferzeit 14-21 Tag (e)
DMT10H032LFDF-7Diodes IncMOSFET BVDSS: 61V100V U-DFN2020-6 T&R 3K
Produkt ist nicht verfügbar
DMT10H032LFDF-7Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V U-DFN2020-6 T&R 3K
auf Bestellung 2500 Stücke:
Lieferzeit 14-28 Tag (e)
28+1.88 EUR
34+ 1.56 EUR
100+ 1.13 EUR
500+ 0.97 EUR
1000+ 0.85 EUR
3000+ 0.71 EUR
24000+ 0.69 EUR
Mindestbestellmenge: 28
DMT10H032LFDF-7Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H032LFDF-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 40A; 1.1W
Mounting: SMD
Case: U-DFN2020-6
Type of transistor: N-MOSFET
On-state resistance: 46mΩ
Drain current: 5A
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11.9nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMT10H032LFDF-7DIODES INC.Description: DIODES INC. - DMT10H032LFDF-7 - Leistungs-MOSFET, n-Kanal, 100 V, 6 A, 0.024 ohm, UDFN2020, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 1.3W
Bauform - Transistor: UDFN2020
Anzahl der Pins: 6Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.024ohm
auf Bestellung 1733 Stücke:
Lieferzeit 14-21 Tag (e)
DMT10H032LFVW-13Diodes IncN-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
DMT10H032LFVW-13Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 10A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H032LFVW-7Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V PowerDI3333-8/SWP T&R 2K
Produkt ist nicht verfügbar
DMT10H032LFVW-7DIODES INC.Description: DIODES INC. - DMT10H032LFVW-7 - Leistungs-MOSFET, n-Kanal, 100 V, 17 A, 0.022 ohm, PowerDI3333, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 17A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 1.3W
Bauform - Transistor: PowerDI3333
Anzahl der Pins: 8Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.022ohm
auf Bestellung 1996 Stücke:
Lieferzeit 14-21 Tag (e)
DMT10H032LFVW-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 68A; 2.5W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: N-MOSFET
On-state resistance: 50mΩ
Drain current: 13A
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11.9nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 68A
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
DMT10H032LFVW-7DIODES INC.Description: DIODES INC. - DMT10H032LFVW-7 - Leistungs-MOSFET, n-Kanal, 100 V, 17 A, 0.022 ohm, PowerDI3333, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 17A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 1.3W
Bauform - Transistor: PowerDI3333
Anzahl der Pins: 8Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.022ohm
auf Bestellung 1996 Stücke:
Lieferzeit 14-21 Tag (e)
DMT10H032LFVW-7Diodes IncMOSFET BVDSS: 61V100V PowerDI3333-8/SWP T&R 2K
Produkt ist nicht verfügbar
DMT10H032LFVW-7Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 10A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+0.86 EUR
6000+ 0.82 EUR
10000+ 0.78 EUR
Mindestbestellmenge: 2000
DMT10H032LFVW-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 68A; 2.5W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: N-MOSFET
On-state resistance: 50mΩ
Drain current: 13A
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11.9nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 68A
Produkt ist nicht verfügbar
DMT10H032LK3-13Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V TO252 T&R
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H032LK3-13Diodes Zetex100V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
DMT10H032LK3-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V TO252 T&R 2.5K
Produkt ist nicht verfügbar
DMT10H032LSS-13Diodes Zetex100V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
DMT10H032LSS-13Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V SO-8 T&R
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 10A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H032SFVW-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V PowerDI3333-8/SWP T&R 3K
Produkt ist nicht verfügbar
DMT10H032SFVW-13Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.53 EUR
6000+ 0.5 EUR
9000+ 0.46 EUR
Mindestbestellmenge: 3000
DMT10H032SFVW-13Diodes Zetex100V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
DMT10H032SFVW-7Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+0.53 EUR
6000+ 0.5 EUR
Mindestbestellmenge: 2000
DMT10H032SFVW-7Diodes IncMOSFET BVDSS: 61V100V PowerDI3333-8/SWP T&R 2K
Produkt ist nicht verfügbar
DMT10H032SFVW-7Diodes ZetexDMT10H032SFVW-7
Produkt ist nicht verfügbar
DMT10H032SFVW-7Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
auf Bestellung 9870 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.56 EUR
20+ 1.33 EUR
100+ 0.93 EUR
500+ 0.72 EUR
1000+ 0.59 EUR
Mindestbestellmenge: 17
DMT10H032SFVW-7Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V PowerDI3333-8/SWP T&R 2K
auf Bestellung 1835 Stücke:
Lieferzeit 14-28 Tag (e)
34+1.57 EUR
39+ 1.35 EUR
100+ 1.01 EUR
500+ 0.79 EUR
1000+ 0.63 EUR
2000+ 0.53 EUR
10000+ 0.48 EUR
Mindestbestellmenge: 34
DMT10H052LFDF-13Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H052LFDF-13Diodes IncMOSFET BVDSS: 61V100V U-DFN2020-6 T&R 10K
Produkt ist nicht verfügbar
DMT10H052LFDF-7Diodes Zetex100V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
DMT10H052LFDF-7Diodes Inc100V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
DMT10H052LFDF-7Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H072LDV-13Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 228pF @ 50V
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Produkt ist nicht verfügbar
DMT10H072LDV-13Diodes ZetexMOSFET BVDSS: 61V100V PowerDI3333-8 T&R 3K
Produkt ist nicht verfügbar
DMT10H072LDV-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V PowerDI3333-8 T&R 3K
Produkt ist nicht verfügbar
DMT10H072LDV-7Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 228pF @ 50V
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+0.76 EUR
6000+ 0.71 EUR
Mindestbestellmenge: 2000
DMT10H072LDV-7Diodes ZetexMOSFET BVDSS: 61V100V PowerDI3333-8 T&R 2K
Produkt ist nicht verfügbar
DMT10H072LDV-7Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V PowerDI3333-8 T&R 2K
Produkt ist nicht verfügbar
DMT10H072LFDF-13Diodes IncorporatedDescription: MOSFET N-CH 100V 4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H072LFDF-13Diodes ZetexTrans MOSFET N-CH 100V 4A 6-Pin UDFN EP T/R
Produkt ist nicht verfügbar
DMT10H072LFDF-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V U-DFN2020-6 T&R 10K
Produkt ist nicht verfügbar
DMT10H072LFDF-7Diodes ZetexTrans MOSFET N-CH 100V 4A 6-Pin UDFN EP T/R
Produkt ist nicht verfügbar
DMT10H072LFDF-7Diodes IncTrans MOSFET N-CH 100V 4A 6-Pin UDFN EP T/R
Produkt ist nicht verfügbar
DMT10H072LFDF-7Diodes IncorporatedDescription: MOSFET N-CH 100V 4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.62 EUR
Mindestbestellmenge: 3000
DMT10H072LFDF-7DIODES INC.Description: DIODES INC. - DMT10H072LFDF-7 - Leistungs-MOSFET, n-Kanal, 100 V, 4 A, 0.047 ohm, UDFN2020, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 800mW
Bauform - Transistor: UDFN2020
Anzahl der Pins: 6Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.047ohm
auf Bestellung 2935 Stücke:
Lieferzeit 14-21 Tag (e)
DMT10H072LFDF-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; Idm: 22A; 1.1W
Mounting: SMD
Case: U-DFN2020-6
Type of transistor: N-MOSFET
On-state resistance: 0.11Ω
Drain current: 3.2A
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 22A
Produkt ist nicht verfügbar
DMT10H072LFDF-7Diodes ZetexTrans MOSFET N-CH 100V 4A 6-Pin UDFN EP T/R
auf Bestellung 291000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.35 EUR
Mindestbestellmenge: 3000
DMT10H072LFDF-7Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V U-DFN2020-6 T&R 3K
Produkt ist nicht verfügbar
DMT10H072LFDF-7DIODES INC.Description: DIODES INC. - DMT10H072LFDF-7 - Leistungs-MOSFET, n-Kanal, 100 V, 4 A, 0.047 ohm, UDFN2020, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 800mW
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 800mW
Bauform - Transistor: UDFN2020
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 6Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.047ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.047ohm
auf Bestellung 2935 Stücke:
Lieferzeit 14-21 Tag (e)
DMT10H072LFDF-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; Idm: 22A; 1.1W
Mounting: SMD
Case: U-DFN2020-6
Type of transistor: N-MOSFET
On-state resistance: 0.11Ω
Drain current: 3.2A
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 22A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMT10H072LFDF-7Diodes IncorporatedDescription: MOSFET N-CH 100V 4A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
16+1.64 EUR
19+ 1.42 EUR
100+ 0.99 EUR
500+ 0.82 EUR
1000+ 0.7 EUR
Mindestbestellmenge: 16
DMT10H072LFDFQ-13Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMT10H072LFDFQ-13Diodes Zetex100V N-Channel Enhancement Mode MOSFET Automotive AEC-Q101
Produkt ist nicht verfügbar
DMT10H072LFDFQ-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; Idm: 22A; 1.1W
Mounting: SMD
Case: U-DFN2020-6
Type of transistor: N-MOSFET
On-state resistance: 0.11Ω
Drain current: 3.2A
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 22A
Produkt ist nicht verfügbar
DMT10H072LFDFQ-7Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V U-DFN2020-6 T&R 3K
auf Bestellung 20218 Stücke:
Lieferzeit 14-28 Tag (e)
34+1.55 EUR
41+ 1.29 EUR
100+ 0.92 EUR
500+ 0.72 EUR
1000+ 0.58 EUR
3000+ 0.49 EUR
9000+ 0.46 EUR
Mindestbestellmenge: 34
DMT10H072LFDFQ-7Diodes IncorporatedDescription: MOSFET N-CH 100V 4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.52 EUR
6000+ 0.49 EUR
9000+ 0.46 EUR
Mindestbestellmenge: 3000
DMT10H072LFDFQ-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; Idm: 22A; 1.1W
Mounting: SMD
Case: U-DFN2020-6
Type of transistor: N-MOSFET
On-state resistance: 0.11Ω
Drain current: 3.2A
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 22A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMT10H072LFDFQ-7Diodes Inc100V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
DMT10H072LFDFQ-7Diodes IncorporatedDescription: MOSFET N-CH 100V 4A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 26791 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.53 EUR
20+ 1.31 EUR
100+ 0.91 EUR
500+ 0.71 EUR
1000+ 0.58 EUR
Mindestbestellmenge: 17
DMT10H072LFV-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.7A; Idm: 80A; 2W
Mounting: SMD
Drain-source voltage: 100V
Drain current: 3.7A
On-state resistance: 109mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: PowerDI3333-8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMT10H072LFV-13Diodes ZetexTrans MOSFET N-CH 100V 4.7A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT10H072LFV-13Diodes IncTrans MOSFET N-CH 100V 4.7A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT10H072LFV-13Diodes IncorporatedDescription: MOSFET N-CH 100V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.53 EUR
6000+ 0.5 EUR
9000+ 0.46 EUR
Mindestbestellmenge: 3000
DMT10H072LFV-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.7A; Idm: 80A; 2W
Mounting: SMD
Drain-source voltage: 100V
Drain current: 3.7A
On-state resistance: 109mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMT10H072LFV-13Diodes IncorporatedMOSFET MOSFET BVDSS 61V-100V
Produkt ist nicht verfügbar
DMT10H072LFV-7Diodes ZetexTrans MOSFET N-CH 100V 4.7A 8-Pin PowerDI EP T/R
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+0.25 EUR
Mindestbestellmenge: 2000
DMT10H072LFV-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.7A; Idm: 80A; 2W
Mounting: SMD
Drain-source voltage: 100V
Drain current: 3.7A
On-state resistance: 109mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMT10H072LFV-7Diodes IncorporatedMOSFET MOSFET BVDSS 61V-100V
auf Bestellung 7438 Stücke:
Lieferzeit 14-28 Tag (e)
44+1.21 EUR
51+ 1.03 EUR
100+ 0.71 EUR
500+ 0.56 EUR
1000+ 0.45 EUR
2000+ 0.38 EUR
10000+ 0.36 EUR
Mindestbestellmenge: 44
DMT10H072LFV-7Diodes ZetexTrans MOSFET N-CH 100V 4.7A 8-Pin PowerDI EP T/R
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+0.25 EUR
Mindestbestellmenge: 2000
DMT10H072LFV-7Diodes IncorporatedDescription: MOSFET N-CH 100V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V
auf Bestellung 290289 Stücke:
Lieferzeit 21-28 Tag (e)
22+1.2 EUR
26+ 1.02 EUR
100+ 0.71 EUR
500+ 0.55 EUR
1000+ 0.45 EUR
Mindestbestellmenge: 22
DMT10H072LFV-7DIODES INC.Description: DIODES INC. - DMT10H072LFV-7 - Leistungs-MOSFET, n-Kanal, 100 V, 20 A, 0.0506 ohm, PowerDI 3333, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.8V
euEccn: NLR
Verlustleistung: 2W
Bauform - Transistor: PowerDI 3333
Anzahl der Pins: 8Pins
Produktpalette: PW Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0506ohm
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 796 Stücke:
Lieferzeit 14-21 Tag (e)
DMT10H072LFV-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.7A; Idm: 80A; 2W
Mounting: SMD
Drain-source voltage: 100V
Drain current: 3.7A
On-state resistance: 109mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: PowerDI3333-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMT10H072LFV-7Diodes ZetexTrans MOSFET N-CH 100V 4.7A 8-Pin PowerDI EP T/R
auf Bestellung 182000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+0.3 EUR
Mindestbestellmenge: 2000
DMT10H072LFV-7Diodes IncTrans MOSFET N-CH 100V 4.7A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT10H072LFV-7Diodes IncorporatedDescription: MOSFET N-CH 100V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V
auf Bestellung 290000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+0.4 EUR
6000+ 0.38 EUR
10000+ 0.35 EUR
50000+ 0.34 EUR
Mindestbestellmenge: 2000
DMT10H072LFV-7DIODES INC.Description: DIODES INC. - DMT10H072LFV-7 - Leistungs-MOSFET, n-Kanal, 100 V, 20 A, 0.0506 ohm, PowerDI 3333, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.8V
euEccn: NLR
Verlustleistung: 2W
Bauform - Transistor: PowerDI 3333
Anzahl der Pins: 8Pins
Produktpalette: PW Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0506ohm
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 796 Stücke:
Lieferzeit 14-21 Tag (e)
DMT10H075LE-13Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V SOT223 T&
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V
auf Bestellung 12500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.47 EUR
5000+ 0.44 EUR
12500+ 0.41 EUR
Mindestbestellmenge: 2500
DMT10H075LE-13Diodes ZetexMOSFET BVDSS: 61V100V SOT223 T&R 2.5K
Produkt ist nicht verfügbar
DMT10H075LE-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V SOT223 T&R 2.5K
Produkt ist nicht verfügbar
DMT10H4M5LPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 400A; 2.3W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 6.2mΩ
Drain current: 15A
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 80nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT10H4M5LPS-13Diodes IncMOSFET BVDSS: 61V100V PowerDI5060-8 T&R 2.5K
Produkt ist nicht verfügbar
DMT10H4M5LPS-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V PowerDI5060-8 T&R 2.5K
Produkt ist nicht verfügbar
DMT10H4M5LPS-13Diodes IncorporatedDescription: MOSFET BVDSS: 61V-100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4843 pF @ 50 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+2.31 EUR
5000+ 2.23 EUR
Mindestbestellmenge: 2500
DMT10H4M5LPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 400A; 2.3W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 6.2mΩ
Drain current: 15A
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 80nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Produkt ist nicht verfügbar
DMT10H4M9LPSW-13Diodes ZetexMOSFET BVDSS: 61V100V PowerDI5060-8/SWP T&R 2.5K
Produkt ist nicht verfügbar
DMT10H4M9SPSW-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V PowerDI5060-8/SWP T&R 2.5K
Produkt ist nicht verfügbar
DMT10H4M9SPSW-13Diodes ZetexDMT10H4M9SPSW-13
Produkt ist nicht verfügbar
DMT10H9M9LCTDIODES INC.Description: DIODES INC. - DMT10H9M9LCT - Leistungs-MOSFET, n-Kanal, 100 V, 101 A, 0.0067 ohm, TO-220AB, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 101A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 156W
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0067ohm
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
DMT10H9M9LCTDiodes IncorporatedDescription: MOSFET BVDSS: 61V~100V TO220AB T
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
auf Bestellung 7300 Stücke:
Lieferzeit 21-28 Tag (e)
50+3.06 EUR
Mindestbestellmenge: 50
DMT10H9M9LCTDiodes ZetexDMT10H9M9LCT
auf Bestellung 7300 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.78 EUR
Mindestbestellmenge: 250
DMT10H9M9LCTDiodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V TO220AB TUBE 50PCS
Produkt ist nicht verfügbar
DMT10H9M9LCTDiodes ZetexN-Channel Enhancement MODE MOSFET
Produkt ist nicht verfügbar
DMT10H9M9LK3-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V TO252 T&R 2.5K
Produkt ist nicht verfügbar
DMT10H9M9LK3-13Diodes ZetexMOSFET BVDSS: 61V100V TO252 T&R 2.5K
Produkt ist nicht verfügbar
DMT10H9M9LPSW-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V PowerDI5060-8/SWP T&R 2.5K
Produkt ist nicht verfügbar
DMT10H9M9LSS-13Diodes ZetexMOSFET BVDSS: 61V100V SO-8 T&R 2.5K
Produkt ist nicht verfügbar
DMT10H9M9LSS-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V SO-8 T&R 2.5K
Produkt ist nicht verfügbar
DMT10H9M9SCTDIODES INC.Description: DIODES INC. - DMT10H9M9SCT - Leistungs-MOSFET, n-Kanal, 100 V, 99 A, 0.0072 ohm, TO-220AB, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 99A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.9V
euEccn: NLR
Verlustleistung: 156W
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3Pins
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0072ohm
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
DMT10H9M9SCTDiodes IncorporatedDescription: MOSFET BVDSS: 61V~100V TO220AB T
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 99A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
auf Bestellung 5950 Stücke:
Lieferzeit 21-28 Tag (e)
50+3.06 EUR
Mindestbestellmenge: 50
DMT10H9M9SCTDiodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V TO220AB TUBE 50PCS
Produkt ist nicht verfügbar
DMT10H9M9SH3Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V TO251 TUB
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H9M9SH3Diodes IncorporatedMOSFET MOSFET BVDSS: 61V 100V TO251 TUBE 75PCS
Produkt ist nicht verfügbar
DMT10H9M9SK3-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V TO252 T&R 2.5K
Produkt ist nicht verfügbar
DMT10H9M9SK3-13Diodes ZetexMOSFET BVDSS: 61V100V TO252 T&R 2.5K
Produkt ist nicht verfügbar
DMT10H9M9SPSW-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V 100V PowerDI5060-8/SWP T&R 2.5K
Produkt ist nicht verfügbar
DMT10H9M9SSS-13Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V SO-8 T&R 2.5K
Produkt ist nicht verfügbar
DMT10H9M9SSS-13Diodes ZetexDMT10H9M9SSS-13
Produkt ist nicht verfügbar
DMT12H007LPS-13Diodes IncTrans MOSFET N-CH 120V 90A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT12H007LPS-13Diodes IncorporatedDescription: MOSFET N-CH 120V 90A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.9W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3224 pF @ 60 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.77 EUR
Mindestbestellmenge: 2500
DMT12H007LPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 72A; Idm: 360A; 2.9W
Mounting: SMD
Kind of package: reel; tape
Case: PowerDI5060-8
Power dissipation: 2.9W
Drain-source voltage: 120V
Drain current: 72A
On-state resistance: 14.1mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
Produkt ist nicht verfügbar
DMT12H007LPS-13Diodes IncorporatedDescription: MOSFET N-CH 120V 90A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.9W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3224 pF @ 60 V
auf Bestellung 7483 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.29 EUR
10+ 3.5 EUR
100+ 2.73 EUR
500+ 2.31 EUR
1000+ 1.88 EUR
Mindestbestellmenge: 7
DMT12H007LPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 72A; Idm: 360A; 2.9W
Mounting: SMD
Kind of package: reel; tape
Case: PowerDI5060-8
Power dissipation: 2.9W
Drain-source voltage: 120V
Drain current: 72A
On-state resistance: 14.1mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT12H007LPS-13Diodes IncorporatedMOSFET MOSFET BVDSS: 101V~250V PowerDI5060-8 T&R 2.5K
auf Bestellung 20374 Stücke:
Lieferzeit 14-28 Tag (e)
14+3.98 EUR
17+ 3.17 EUR
100+ 2.54 EUR
500+ 2.15 EUR
1000+ 1.75 EUR
2500+ 1.57 EUR
5000+ 1.55 EUR
Mindestbestellmenge: 14
DMT12H007SPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 64A; Idm: 320A; 2.9W
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.9W
Polarisation: unipolar
Kind of package: reel; tape
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI5060-8
Pulsed drain current: 320A
Drain-source voltage: 120V
Drain current: 64A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT12H007SPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 64A; Idm: 320A; 2.9W
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.9W
Polarisation: unipolar
Kind of package: reel; tape
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI5060-8
Pulsed drain current: 320A
Drain-source voltage: 120V
Drain current: 64A
Produkt ist nicht verfügbar
DMT12H060LFDF-7Diodes IncorporatedDescription: MOSFET BVDSS: 101V~250V U-DFN202
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 115 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 50 V
auf Bestellung 3571400 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.54 EUR
6000+ 0.52 EUR
9000+ 0.48 EUR
30000+ 0.47 EUR
Mindestbestellmenge: 3000
DMT12H060LFDF-7Diodes IncorporatedMOSFET MOSFET BVDSS: 101V 250V U-DFN2020-6 T&R 3K
auf Bestellung 678 Stücke:
Lieferzeit 14-28 Tag (e)
35+1.52 EUR
39+ 1.33 EUR
100+ 1.02 EUR
500+ 0.81 EUR
1000+ 0.65 EUR
3000+ 0.58 EUR
9000+ 0.52 EUR
Mindestbestellmenge: 35
DMT12H060LFDF-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tape
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMT12H060LFDF-7Diodes IncorporatedDescription: MOSFET BVDSS: 101V~250V U-DFN202
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 115 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 50 V
auf Bestellung 3571938 Stücke:
Lieferzeit 21-28 Tag (e)
19+1.43 EUR
21+ 1.24 EUR
100+ 0.86 EUR
500+ 0.72 EUR
1000+ 0.61 EUR
Mindestbestellmenge: 19
DMT12H060LFDF-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tape
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMT12H065LFDF-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 115V; 3.4A; Idm: 25A; 1.2W
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Mounting: SMD
Gate charge: 5.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: U-DFN2020-6
Pulsed drain current: 25A
Drain-source voltage: 115V
Drain current: 3.4A
Produkt ist nicht verfügbar
DMT12H065LFDF-13Diodes IncorporatedDescription: MOSFET 61V~100V U-DFN2020-6
Produkt ist nicht verfügbar
DMT12H065LFDF-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 115V; 3.4A; Idm: 25A; 1.2W
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Mounting: SMD
Gate charge: 5.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: U-DFN2020-6
Pulsed drain current: 25A
Drain-source voltage: 115V
Drain current: 3.4A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMT12H065LFDF-13Diodes IncMOSFET BVDSS: 61V100V U-DFN2020-6 T&R 10K
Produkt ist nicht verfügbar
DMT12H065LFDF-7Diodes IncorporatedMOSFET MOSFET BVDSS: 61V-100V U-DFN2020-6 T&R 3K
auf Bestellung 1005 Stücke:
Lieferzeit 14-28 Tag (e)
22+2.39 EUR
25+ 2.1 EUR
100+ 1.61 EUR
500+ 1.28 EUR
1000+ 1.02 EUR
3000+ 0.92 EUR
Mindestbestellmenge: 22
DMT12H065LFDF-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tape
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMT12H065LFDF-7Diodes IncorporatedDescription: MOSFET N-CH 115V 4.3A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 115 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 252 pF @ 50 V
auf Bestellung 39259 Stücke:
Lieferzeit 21-28 Tag (e)
12+2.26 EUR
14+ 1.96 EUR
100+ 1.36 EUR
500+ 1.13 EUR
1000+ 0.96 EUR
Mindestbestellmenge: 12
DMT12H065LFDF-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tape
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMT12H065LFDF-7Diodes IncorporatedDescription: MOSFET N-CH 115V 4.3A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 115 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 252 pF @ 50 V
auf Bestellung 39000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.86 EUR
6000+ 0.81 EUR
9000+ 0.75 EUR
Mindestbestellmenge: 3000
DMT12H090LFDF4-13Diodes IncorporatedDescription: MOSFET N-CH 115V 3.4A 6DFN
Produkt ist nicht verfügbar
DMT12H090LFDF4-13Diodes IncorporatedMOSFET MOSFET BVDSS: 101V 250V X2-DFN2020-6 T&R 10K
Produkt ist nicht verfügbar
DMT12H090LFDF4-7Diodes IncorporatedMOSFET MOSFET BVDSS: 101V-250V X2-DFN2020-6 T&R 3K
auf Bestellung 1928 Stücke:
Lieferzeit 14-28 Tag (e)
23+2.32 EUR
26+ 2.01 EUR
100+ 1.39 EUR
500+ 1.16 EUR
1000+ 0.99 EUR
3000+ 0.86 EUR
6000+ 0.82 EUR
Mindestbestellmenge: 23
DMT12H090LFDF4-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 115V; 2.7A; Idm: 15A; 1W
Mounting: SMD
Drain-source voltage: 115V
Drain current: 2.7A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Case: X2-DFN2020-6
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 15A
Produkt ist nicht verfügbar
DMT12H090LFDF4-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 115V; 2.7A; Idm: 15A; 1W
Mounting: SMD
Drain-source voltage: 115V
Drain current: 2.7A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Case: X2-DFN2020-6
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 15A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMT12H090LFDF4-7Diodes IncorporatedDescription: MOSFET N-CH 115V 3.4A 6DFN
auf Bestellung 96000 Stücke:
Lieferzeit 21-28 Tag (e)
DMT15H017LPS-13Diodes IncTrans MOSFET N-CH 150V 9.4A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT15H017LPS-13DIODES INCORPORATEDDMT15H017LPS-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMT15H017LPS-13Diodes IncorporatedDescription: MOSFET BVDSS: 101V~250V POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3369 pF @ 75 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.64 EUR
5000+ 1.56 EUR
Mindestbestellmenge: 2500
DMT15H017LPS-13Diodes IncorporatedMOSFET MOSFET BVDSS: 101V-250V PowerDI5060-8 T&R 2.5K
auf Bestellung 444 Stücke:
Lieferzeit 14-28 Tag (e)
13+4.19 EUR
14+ 3.74 EUR
100+ 2.91 EUR
500+ 2.41 EUR
1000+ 1.9 EUR
2500+ 1.77 EUR
5000+ 1.69 EUR
Mindestbestellmenge: 13
DMT15H017LPS-13Diodes IncorporatedDescription: MOSFET BVDSS: 101V~250V POWERDI5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3369 pF @ 75 V
Qualification: AEC-Q101
auf Bestellung 6676 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.95 EUR
10+ 3.24 EUR
100+ 2.52 EUR
500+ 2.13 EUR
1000+ 1.74 EUR
Mindestbestellmenge: 7
DMT15H017LPSW-13Diodes IncorporatedMOSFET MOSFET BVDSS: 101V-250V PowerDI5060-8 T&R 2.5K
Produkt ist nicht verfügbar
DMT15H017LPSW-13Diodes IncorporatedDescription: MOSFET BVDSS: 101V~250V POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3369 pF @ 75 V
Produkt ist nicht verfügbar
DMT15H017LPSW-13Diodes Inc150V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
DMT15H017LPSW-13DIODES INCORPORATEDDMT15H017LPSW-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMT15H017SK3-13Diodes IncorporatedMOSFET MOSFET BVDSS: 101V-250V TO252 T&R 2.5K
Produkt ist nicht verfügbar
DMT15H017SK3-13Diodes IncorporatedDescription: MOSFET BVDSS: 101V~250V TO252 T&
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2344 pF @ 75 V
Produkt ist nicht verfügbar
DMT15H017SK3-13Diodes IncMOSFET BVDSS: 101V250V TO252 T&R 2.5K
Produkt ist nicht verfügbar
DMT15H017SK3-13DIODES INCORPORATEDDMT15H017SK3-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMT15H035SCTDiodes IncorporatedMOSFET MOSFET BVDSS: 101V-250V TO220AB TUBE 50PCS
Produkt ist nicht verfügbar
DMT15H035SCTDiodes IncorporatedDescription: MOSFET BVDSS: 101V~250V TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V
auf Bestellung 5450 Stücke:
Lieferzeit 21-28 Tag (e)
50+2.55 EUR
Mindestbestellmenge: 50
DMT15H053SK3-13Diodes IncorporatedMOSFET MOSFET BVDSS: 101V-250V TO252 T&R 2.5K
Produkt ist nicht verfügbar
DMT15H053SK3-13Diodes IncorporatedDescription: MOSFET BVDSS: 101V~250V TO252 T&
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 20A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 814 pF @ 75 V
Produkt ist nicht verfügbar
DMT15H053SSS-13Diodes IncorporatedMOSFET MOSFET BVDSS: 101V-250V SO-8 T&R 2.5K
auf Bestellung 1400 Stücke:
Lieferzeit 14-28 Tag (e)
23+2.27 EUR
29+ 1.85 EUR
100+ 1.44 EUR
500+ 1.22 EUR
1000+ 1 EUR
2500+ 0.94 EUR
5000+ 0.89 EUR
Mindestbestellmenge: 23
DMT15H053SSS-13Diodes IncorporatedDescription: MOSFET N-CH 150V 5.2A/15A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.1A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 814 pF @ 75 V
Produkt ist nicht verfügbar
DMT15H053SSS-13Diodes IncN-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
DMT15H067SSS-13Diodes IncorporatedMOSFET MOSFET BVDSS: 101V-250V SO-8 T&R 2.5K
Produkt ist nicht verfügbar
DMT15H067SSS-13Diodes IncorporatedDescription: MOSFET N-CH 150V 4.5A/13A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.1A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 75 V
Produkt ist nicht verfügbar
DMT15H067SSS-13Diodes IncTrans MOSFET N-CH 150V 4.5A 8-Pin SO T/R
Produkt ist nicht verfügbar
DMT1D15K-FCornell Dubilier Electronics (CDE)Description: CAP FILM 1500PF 10% 100VDC RAD
Produkt ist nicht verfügbar
DMT1D1KCornell Dubilier Electronics (CDE)Description: CAP FILM 1000PF 10% 100VDC RAD
Produkt ist nicht verfügbar
DMT1D1K-FCornell Dubilier - CDEFilm Capacitors .0010uF 100Vdc
auf Bestellung 721 Stücke:
Lieferzeit 14-28 Tag (e)
DMT1D1K-FCornell Dubilier Electronics (CDE)Description: CAP FILM 1000PF 10% 100VDC RAD
Packaging: Bulk
Tolerance: ±10%
Package / Case: Radial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Lead Spacing: 0.394" (10.00mm)
Termination: PC Pins
Dielectric Material: Polyester, Metallized
Voltage Rating - AC: 65V
Voltage Rating - DC: 100V
Height - Seated (Max): 0.448" (11.37mm)
Capacitance: 1000 pF
Size / Dimension: 0.512" L x 0.197" W (13.00mm x 5.00mm)
Produkt ist nicht verfügbar
DMT1D22KCornell Dubilier Electronics (CDE)Description: CAP FILM 2200PF 10% 100VDC RAD
Produkt ist nicht verfügbar
DMT1D22K-FCornell Dubilier Electronics (CDE)Description: CAP FILM 2200PF 10% 100VDC RAD
Produkt ist nicht verfügbar
DMT1D22K-FCornell Dubilier - CDEFilm Capacitors .0022uF 100Vdc
Produkt ist nicht verfügbar
DMT1D33KCornell Dubilier Electronics (CDE)Description: CAP FILM 3300PF 10% 100VDC RAD
Produkt ist nicht verfügbar
DMT1D47K-FCornell Dubilier - CDEFilm Capacitors .0047uF 100Vdc
auf Bestellung 363 Stücke:
Lieferzeit 14-28 Tag (e)
DMT1D47K-FCornell Dubilier Electronics (CDE)Description: CAP FILM 4700PF 10% 100VDC RAD
Packaging: Bulk
Tolerance: ±10%
Package / Case: Radial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Lead Spacing: 0.394" (10.00mm)
Termination: PC Pins
Dielectric Material: Polyester, Metallized
Voltage Rating - AC: 65V
Voltage Rating - DC: 100V
Height - Seated (Max): 0.448" (11.37mm)
Capacitance: 4700 pF
Size / Dimension: 0.512" L x 0.209" W (13.00mm x 5.30mm)
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
500+2.03 EUR
Mindestbestellmenge: 500
DMT1D68KCornell Dubilier Electronics (CDE)Description: CAP FILM 6800PF 10% 100VDC RAD
Produkt ist nicht verfügbar
DMT1D68K-FCornell Dubilier - CDEFilm Capacitors .0068uF 100Vdc
Produkt ist nicht verfügbar
DMT1D68K-FCornell Dubilier Electronics (CDE)Description: CAP FILM 6800PF 10% 100VDC RAD
Produkt ist nicht verfügbar
DMT1P15K-FCornell Dubilier Electronics (CDE)Description: CAP FILM 0.15UF 10% 100VDC RAD
Produkt ist nicht verfügbar
DMT1P1K-FCornell Dubilier Electronics (CDE)Description: CAP FILM 0.1UF 10% 100VDC RADIAL
auf Bestellung 1414 Stücke:
Lieferzeit 21-28 Tag (e)
DMT1P1K-FCornell Dubilier - CDEFilm Capacitors .1UF 100V 10%
auf Bestellung 313 Stücke:
Lieferzeit 14-28 Tag (e)
DMT1P22K-FCornell Dubilier - CDEFilm Capacitors .22uF 100Vdc
auf Bestellung 529 Stücke:
Lieferzeit 14-28 Tag (e)
DMT1P22K-FCornell Dubilier Electronics (CDE)Description: CAP FILM 0.22UF 10% 100VDC RAD
auf Bestellung 500500 Stücke:
Lieferzeit 21-28 Tag (e)
DMT1P33KCornell Dubilier Electronics (CDE)Description: CAP FILM 0.33UF 10% 100VDC RAD
Produkt ist nicht verfügbar
DMT1P33K-FCornell Dubilier - CDEFilm Capacitors 100Vdc .33uF
Produkt ist nicht verfügbar
DMT1P33K-FCornell Dubilier Electronics (CDE)Description: CAP FILM 0.33UF 10% 100VDC RAD
Produkt ist nicht verfügbar
DMT1P47K-FCornell Dubilier - CDEFilm Capacitors .47uF 100Vdc
auf Bestellung 2 Stücke:
Lieferzeit 14-28 Tag (e)
DMT1P47K-FCornell Dubilier Electronics (CDE)Description: CAP FILM 0.47UF 10% 100VDC RAD
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
DMT1P68K-FCornell Dubilier Electronics (CDE)Description: CAP FILM 0.68UF 10% 100VDC RAD
Produkt ist nicht verfügbar
DMT1S15KCornell Dubilier Electronics (CDE)Description: CAP FILM 0.015UF 10% 100VDC RAD
Produkt ist nicht verfügbar
DMT1S15K-FCornell Dubilier Electronics (CDE)Description: CAP FILM 0.015UF 10% 100VDC RAD
Produkt ist nicht verfügbar
DMT1S15K-FCornell Dubilier - CDEFilm Capacitors 0.015uF 100Vdc
auf Bestellung 827 Stücke:
Lieferzeit 14-28 Tag (e)
DMT1S1K-FCornell Dubilier - CDEFilm Capacitors .01UF 100V 10%
auf Bestellung 1000 Stücke:
Lieferzeit 14-28 Tag (e)
DMT1S1K-FCornell Dubilier Electronics (CDE)Description: CAP FILM 10000PF 10% 100VDC RAD
Packaging: Bulk
Tolerance: ±10%
Package / Case: Radial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Lead Spacing: 0.394" (10.00mm)
Termination: PC Pins
Dielectric Material: Polyester, Metallized
Voltage Rating - AC: 65V
Voltage Rating - DC: 100V
Height - Seated (Max): 0.448" (11.37mm)
Capacitance: 10000 pF
Size / Dimension: 0.512" L x 0.220" W (13.00mm x 5.60mm)
auf Bestellung 2062 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.06 EUR
10+ 3.04 EUR
500+ 1.81 EUR
1000+ 1.6 EUR
Mindestbestellmenge: 7
DMT1S22KCornell Dubilier Electronics (CDE)Description: CAP FILM 0.022UF 10% 100VDC RAD
Produkt ist nicht verfügbar
DMT1S22K-FCornell Dubilier - CDEFilm Capacitors .022uF 100Vdc
auf Bestellung 755 Stücke:
Lieferzeit 14-28 Tag (e)
DMT1S22K-FCornell Dubilier Electronics (CDE)Description: CAP FILM 0.022UF 10% 100VDC RAD
Produkt ist nicht verfügbar
DMT1S33KCornell Dubilier Electronics (CDE)Description: CAP FILM 0.033UF 10% 100VDC RAD
Packaging: Bulk
Tolerance: ±10%
Package / Case: Radial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Lead Spacing: 0.402" (10.20mm)
Termination: PC Pins
Dielectric Material: Polyester, Metallized
Voltage Rating - AC: 65V
Voltage Rating - DC: 100V
Height - Seated (Max): 0.444" (11.27mm)
Capacitance: 0.033 µF
Size / Dimension: 0.559" L x 0.248" W (14.20mm x 6.30mm)
Produkt ist nicht verfügbar
DMT1S33K-FCornell Dubilier Electronics (CDE)Description: CAP FILM 0.033UF 10% 100VDC RAD
Packaging: Bulk
Tolerance: ±10%
Package / Case: Radial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Lead Spacing: 0.402" (10.20mm)
Termination: PC Pins
Dielectric Material: Polyester, Metallized
Voltage Rating - AC: 65V
Voltage Rating - DC: 100V
Height - Seated (Max): 0.444" (11.27mm)
Capacitance: 0.033 µF
Size / Dimension: 0.559" L x 0.248" W (14.20mm x 6.30mm)
Produkt ist nicht verfügbar
DMT1S33K-FCornell Dubilier - CDEFilm Capacitors 0.033uF 100Vdc
Produkt ist nicht verfügbar
DMT1S47K-FCornell Dubilier - CDEFilm Capacitors 0.047uF 100V 10%
Produkt ist nicht verfügbar
DMT1S47K-FCornell Dubilier Electronics (CDE)Description: CAP FILM 0.047UF 10% 100VDC RAD
Produkt ist nicht verfügbar
DMT1S68K-FCornell Dubilier Electronics (CDE)Description: CAP FILM 0.068UF 10% 100VDC RAD
auf Bestellung 4931500 Stücke:
Lieferzeit 21-28 Tag (e)
DMT1S68K-FCornell Dubilier - CDEFilm Capacitors .068uF 100Vdc
auf Bestellung 473 Stücke:
Lieferzeit 14-28 Tag (e)
DMT1W1K-FCornell Dubilier - CDEFilm Capacitors 1uF 100V 10%
auf Bestellung 994 Stücke:
Lieferzeit 218-232 Tag (e)
5+10.82 EUR
10+ 8.71 EUR
50+ 5.07 EUR
Mindestbestellmenge: 5
DMT1W1K-FCornell Dubilier Electronics (CDE)Description: CAP FILM 1UF 10% 100VDC RADIAL
Packaging: Bulk
Tolerance: ±10%
Package / Case: Radial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Lead Spacing: 1.169" (29.70mm)
Termination: PC Pins
Dielectric Material: Polyester, Metallized
Voltage Rating - AC: 65V
Voltage Rating - DC: 100V
Height - Seated (Max): 0.824" (20.92mm)
Capacitance: 1 µF
Size / Dimension: 1.331" L x 0.520" W (33.80mm x 13.20mm)
Produkt ist nicht verfügbar
DMT2-134-4.8LCoilcraftFixed Inductors 134uH Unshld 4.8A 100mOhms
Produkt ist nicht verfügbar
DMT2-149-3.8LCoilcraftFixed Inductors 149uH Unshld 3.8A 130mOhms
Produkt ist nicht verfügbar
DMT2-20-12LCoilcraftPower Inductors - Leaded 20uH Unshld 12A 20mOhms
auf Bestellung 36 Stücke:
Lieferzeit 14-28 Tag (e)
1+52.78 EUR
252+ 37.1 EUR
504+ 25.9 EUR
1008+ 24.05 EUR
DMT2-200-3.8LCoilcraftPower Inductors - Leaded 200uH Unshld 3.8A 190mOhms
auf Bestellung 70 Stücke:
Lieferzeit 14-28 Tag (e)
3+24.54 EUR
252+ 17.26 EUR
504+ 12.04 EUR
1008+ 11.21 EUR
Mindestbestellmenge: 3
DMT2-26-11LCoilcraftPower Inductors - Leaded 26uH Unshld 11A 20mOhms
auf Bestellung 48 Stücke:
Lieferzeit 87-101 Tag (e)
2+39.91 EUR
252+ 28.03 EUR
504+ 19.55 EUR
1008+ 18.17 EUR
Mindestbestellmenge: 2
DMT2-273-2.4LCoilcraftPower Inductors - Leaded 273uH Unshld 2.4A 260mOhms
Produkt ist nicht verfügbar
DMT2-380-2.4LCoilcraftPower Inductors - Leaded 380uH Shld 2.4A 380mOhms
auf Bestellung 13 Stücke:
Lieferzeit 14-28 Tag (e)
1+75.97 EUR
252+ 53.38 EUR
504+ 37.26 EUR
1008+ 34.63 EUR
DMT2-47-8.2LCoilcraftPower Inductors - Leaded 47uH Shld 8.2A 40mOhms
auf Bestellung 125 Stücke:
Lieferzeit 14-28 Tag (e)
2+39.68 EUR
252+ 27.87 EUR
504+ 19.45 EUR
1008+ 18.07 EUR
Mindestbestellmenge: 2
DMT2-49-8LCoilcraftFixed Inductors 49uH Unshld 8A 40mOhms
Produkt ist nicht verfügbar
DMT2-567-1.5LCoilcraftPower Inductors - Leaded 567uH Unshld 1.5A 560mOhms
Produkt ist nicht verfügbar
DMT2-79-6LCoilcraftFixed Inductors 79uH Unshld 6A 70mOhms
Produkt ist nicht verfügbar
DMT2-796-1.5LCoilcraftFixed Inductors 796uH Unshld 1.5A 790mOhms
Produkt ist nicht verfügbar
DMT2-80-6.3LCoilcraftPower Inductors - Leaded 80uH Unshld 6.3A 50mOhms
auf Bestellung 216 Stücke:
Lieferzeit 14-28 Tag (e)
2+45.4 EUR
252+ 31.9 EUR
504+ 22.28 EUR
1008+ 20.7 EUR
Mindestbestellmenge: 2
DMT2004UFDF-13Diodes IncorporatedDescription: MOSFET N-CH 24V 14.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 9A, 10V
Power Dissipation (Max): 800mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMT2004UFDF-13Diodes IncorporatedMOSFET MOSFET BVDSS: 8V-24V
Produkt ist nicht verfügbar
DMT2004UFDF-13Diodes ZetexTrans MOSFET N-CH 24V 14.1A 6-Pin UDFN EP T/R
Produkt ist nicht verfügbar
DMT2004UFDF-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 11.2A; Idm: 70A; 1.8W
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 53.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 70A
Mounting: SMD
Case: U-DFN2020-6
Drain-source voltage: 24V
Drain current: 11.2A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMT2004UFDF-7Diodes ZetexTrans MOSFET N-CH 24V 14.1A 6-Pin UDFN EP T/R
Produkt ist nicht verfügbar
DMT2004UFDF-7Diodes IncorporatedDescription: MOSFET N-CH 24V 14.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 9A, 10V
Power Dissipation (Max): 800mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.53 EUR
Mindestbestellmenge: 3000
DMT2004UFDF-7Diodes IncorporatedMOSFET MOSFET BVDSS: 8V-24V
auf Bestellung 4980 Stücke:
Lieferzeit 14-28 Tag (e)
34+1.57 EUR
42+ 1.24 EUR
100+ 0.93 EUR
500+ 0.73 EUR
1000+ 0.59 EUR
3000+ 0.48 EUR
9000+ 0.47 EUR
Mindestbestellmenge: 34
DMT2004UFDF-7Diodes ZetexTrans MOSFET N-CH 24V 14.1A 6-Pin UDFN EP T/R
Produkt ist nicht verfügbar
DMT2004UFDF-7Diodes IncorporatedDescription: MOSFET N-CH 24V 14.1A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 9A, 10V
Power Dissipation (Max): 800mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5736 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.56 EUR
20+ 1.33 EUR
100+ 0.93 EUR
500+ 0.72 EUR
1000+ 0.59 EUR
Mindestbestellmenge: 17
DMT2004UFDF-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 11.2A; Idm: 70A; 1.8W
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 53.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 70A
Mounting: SMD
Case: U-DFN2020-6
Drain-source voltage: 24V
Drain current: 11.2A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT2004UFG-13Diodes IncorporatedDescription: MOSFET N-CH 24V 70A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMT2004UFG-13Diodes IncorporatedMOSFET MOSFET BVDSS: 8V-24V
Produkt ist nicht verfügbar
DMT2004UFG-7Diodes IncorporatedMOSFET MOSFET BVDSS: 8V-24V
auf Bestellung 1750 Stücke:
Lieferzeit 461-475 Tag (e)
36+1.47 EUR
40+ 1.31 EUR
100+ 0.89 EUR
500+ 0.75 EUR
1000+ 0.64 EUR
2000+ 0.57 EUR
4000+ 0.56 EUR
Mindestbestellmenge: 36
DMT2004UFG-7Diodes IncorporatedDescription: MOSFET N-CH 24V 70A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9988 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.48 EUR
21+ 1.28 EUR
100+ 0.89 EUR
500+ 0.74 EUR
1000+ 0.63 EUR
Mindestbestellmenge: 18
DMT2004UFG-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 53.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 24V
Drain current: 55A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT2004UFG-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 53.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 24V
Drain current: 55A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
DMT2004UFG-7Diodes IncorporatedDescription: MOSFET N-CH 24V 70A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+0.56 EUR
6000+ 0.53 EUR
Mindestbestellmenge: 2000
DMT2004UFV-13Diodes IncorporatedMOSFET MOSFET BVDSS: 8V-24V
Produkt ist nicht verfügbar
DMT2004UFV-13Diodes IncorporatedDescription: MOSFET N-CH 24V 70A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Produkt ist nicht verfügbar
DMT2004UFV-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Kind of package: reel; tape
Pulsed drain current: 90A
Mounting: SMD
Drain-source voltage: 24V
Drain current: 55A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 53.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
DMT2004UFV-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Kind of package: reel; tape
Pulsed drain current: 90A
Mounting: SMD
Drain-source voltage: 24V
Drain current: 55A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 53.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMT2004UFV-7Diodes IncorporatedMOSFET MOSFET BVDSS: 8V-24V
auf Bestellung 3984 Stücke:
Lieferzeit 14-28 Tag (e)
35+1.5 EUR
41+ 1.29 EUR
100+ 0.96 EUR
500+ 0.76 EUR
1000+ 0.58 EUR
2000+ 0.44 EUR
Mindestbestellmenge: 35
DMT2004UFV-7Diodes IncorporatedDescription: MOSFET N-CH 24V 70A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+0.5 EUR
6000+ 0.48 EUR
10000+ 0.44 EUR
Mindestbestellmenge: 2000
DMT2004UFV-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 53.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 24V
Drain current: 55A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT2004UFV-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 53.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 24V
Drain current: 55A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMT2004UPS-13Diodes IncorporatedMOSFET MOSFET BVDSS: 8V-24V
Produkt ist nicht verfügbar
DMT2004UPS-13Diodes IncorporatedDescription: MOSFET N-CH 24V 80A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.58 EUR
5000+ 0.55 EUR
12500+ 0.51 EUR
Mindestbestellmenge: 2500
DMT2005UDV-13Diodes IncTrans MOSFET N-CH 24V 50A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT2005UDV-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 40A; Idm: 70A; 1.9W
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 46.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 70A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 24V
Drain current: 40A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT2005UDV-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 40A; Idm: 70A; 1.9W
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 46.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 70A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 24V
Drain current: 40A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMT2005UDV-13Diodes IncorporatedMOSFET MOSFET BVDSS: 8V-24V
auf Bestellung 2990 Stücke:
Lieferzeit 367-381 Tag (e)
32+1.66 EUR
37+ 1.42 EUR
100+ 1.06 EUR
500+ 0.83 EUR
1000+ 0.64 EUR
3000+ 0.56 EUR
6000+ 0.54 EUR
Mindestbestellmenge: 32
DMT2005UDV-13Diodes IncorporatedDescription: MOSFET 2N-CH 24V 50A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 46.7nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Produkt ist nicht verfügbar
DMT2005UDV-7Diodes IncorporatedMOSFET MOSFET BVDSS: 8V-24V
Produkt ist nicht verfügbar
DMT2005UDV-7Diodes IncorporatedDescription: MOSFET 2N-CH 24V 50A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 46.7nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Produkt ist nicht verfügbar
DMT26M0LDG-13Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 3K
Produkt ist nicht verfügbar
DMT2D22K-FCornell Dubilier Electronics (CDE)Description: CAP FILM 2200PF 10% 250VDC RAD
Produkt ist nicht verfügbar
DMT2D22K-FCornell Dubilier - CDEFilm Capacitors 0.0022uF 200/250Vdc
auf Bestellung 167 Stücke:
Lieferzeit 14-28 Tag (e)
21+2.57 EUR
26+ 2.03 EUR
100+ 1.52 EUR
500+ 1.2 EUR
Mindestbestellmenge: 21
DMT2D47K-FCornell Dubilier Electronics (CDE)Description: CAP FILM 4700PF 10% 250VDC RAD
Produkt ist nicht verfügbar
DMT2P1K-FCornell Dubilier - CDEFilm Capacitors .1UF 200V 10%
auf Bestellung 626 Stücke:
Lieferzeit 14-28 Tag (e)
DMT2P1K-FCornell Dubilier Electronics (CDE)Description: CAP FILM 0.1UF 10% 250VDC RADIAL
Tolerance: ±10%
Packaging: Bulk
Package / Case: Radial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Lead Spacing: 0.669" (17.00mm)
Termination: PC Pins
Dielectric Material: Polyester, Metallized
Voltage Rating - AC: 125V
Voltage Rating - DC: 250V
Height - Seated (Max): 0.606" (15.40mm)
Part Status: Active
Capacitance: 0.1 µF
Size / Dimension: 0.819" L x 0.354" W (20.80mm x 9.00mm)
auf Bestellung 641 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.55 EUR
10+ 3.48 EUR
500+ 2.13 EUR
Mindestbestellmenge: 6
DMT2P1K-FCORNELL DUBILIERDescription: CORNELL DUBILIER - DMT2P1K-F - CAPACITOR POLYESTER FILM 0.1UF, 200V, 10%, RADIAL
tariffCode: 85322500
Produkthöhe: 15.4mm
Bauform / Gehäuse des Kondensators: Radial Box - 2 Pin
rohsCompliant: YES
Anschlussabstand: 17mm
hazardous: false
rohsPhthalatesCompliant: YES
Kapazitätstoleranz: ± 10%
Kondensatormontage: Through Hole
Qualifikation: -
usEccn: EAR99
Betriebstemperatur, min.: -55°C
Produktlänge: 20.8mm
euEccn: NLR
Dielektrikum: Film / Foil PET
Spannung (AC): -
Kapazität: 0.1µF
Spannung (DC): 200V
Produktpalette: DMT Series
productTraceability: No
Kondensatoranschlüsse: PC Pin
Betriebstemperatur, max.: 125°C
Feuchtigkeitsklasse: -
Produktbreite: 9mm
directShipCharge: 25
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
DMT2P22K-FCornell Dubilier - CDEFilm Capacitors .22UF 200V 10%
auf Bestellung 35 Stücke:
Lieferzeit 14-28 Tag (e)
DMT2P22K-FCornell Dubilier Electronics (CDE)Description: CAP FILM 0.22UF 10% 250VDC RAD
Tolerance: ±10%
Packaging: Bulk
Package / Case: Radial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Lead Spacing: 0.795" (20.20mm)
Termination: PC Pins
Dielectric Material: Polyester, Metallized
Voltage Rating - AC: 125V
Voltage Rating - DC: 250V
Height - Seated (Max): 0.724" (18.38mm)
Part Status: Active
Capacitance: 0.22 µF
Size / Dimension: 0.945" L x 0.413" W (24.00mm x 10.50mm)
auf Bestellung 530 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.02 EUR
10+ 5.68 EUR
50+ 4.95 EUR
100+ 4.33 EUR
500+ 3.3 EUR
Mindestbestellmenge: 4
DMT2P33K-FCornell Dubilier Electronics (CDE)Description: CAP FILM 0.33UF 10% 250VDC RAD
Produkt ist nicht verfügbar
DMT2P47K-FCornell Dubilier Electronics (CDE)Description: CAP FILM 0.47UF 10% 250VDC RAD
Tolerance: ±10%
Packaging: Bulk
Package / Case: Radial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Lead Spacing: 0.921" (23.40mm)
Termination: PC Pins
Dielectric Material: Polyester, Metallized
Voltage Rating - AC: 125V
Voltage Rating - DC: 250V
Height - Seated (Max): 0.822" (20.87mm)
Capacitance: 0.47 µF
Size / Dimension: 1.110" L x 0.531" W (28.20mm x 13.50mm)
auf Bestellung 1003 Stücke:
Lieferzeit 21-28 Tag (e)
2+15.11 EUR
10+ 13.1 EUR
100+ 10.21 EUR
1000+ 8.56 EUR
Mindestbestellmenge: 2
DMT2P47K-FCornell Dubilier - CDEFilm Capacitors 0.47uF 200V 10%
auf Bestellung 718 Stücke:
Lieferzeit 14-28 Tag (e)
DMT2P68KCornell Dubilier Electronics (CDE)Description: CAP FILM 0.68UF 10% 250VDC RAD
Produkt ist nicht verfügbar
DMT2P68K-FCornell Dubilier Electronics (CDE)Description: CAP FILM 0.68UF 10% 250VDC RAD
Produkt ist nicht verfügbar
DMT2S1K-FCornell Dubilier - CDEFilm Capacitors .01uF 200/250Vdc
auf Bestellung 651 Stücke:
Lieferzeit 14-28 Tag (e)
DMT2S1K-FCornell Dubilier Electronics (CDE)Description: CAP FILM 10000PF 10% 250VDC RAD
Produkt ist nicht verfügbar
DMT2S47K-FCornell Dubilier Electronics (CDE)Description: CAP FILM 0.047UF 10% 250VDC RAD
Produkt ist nicht verfügbar
DMT2S47K-FCornell Dubilier - CDEFilm Capacitors 0.047uF 200V 10%
auf Bestellung 2145 Stücke:
Lieferzeit 14-28 Tag (e)
12+4.63 EUR
15+ 3.67 EUR
100+ 2.76 EUR
500+ 2.07 EUR
Mindestbestellmenge: 12
DMT3-138-6LCoilcraftFixed Inductors DMT1 Power Chokes Toroidal Output
Produkt ist nicht verfügbar
DMT3-1439-1.5LCoilcraftPower Inductors - Leaded 1.439 mH Unshld 1.5A 1.176Ohms
auf Bestellung 28 Stücke:
Lieferzeit 14-28 Tag (e)
1+77.12 EUR
252+ 54.18 EUR
504+ 37.8 EUR
DMT3-257-4.9LCoilcraftPower Inductors - Leaded 257uH Unshld 4.9A 150mOhms
auf Bestellung 4 Stücke:
Lieferzeit 14-28 Tag (e)
2+42.04 EUR
252+ 29.54 EUR
504+ 20.62 EUR
1008+ 19.16 EUR
Mindestbestellmenge: 2
DMT3-35-12LCoilcraftPower Inductors - Leaded 35uH Unshld 12A 19mOhms
auf Bestellung 20 Stücke:
Lieferzeit 14-28 Tag (e)
2+38.27 EUR
252+ 26.88 EUR
504+ 18.77 EUR
1008+ 17.45 EUR
Mindestbestellmenge: 2
DMT3-402-3.7LCoilcraftPower Inductors - Leaded 402uH Unshld - 3.7A 279mOhms
auf Bestellung 29 Stücke:
Lieferzeit 14-28 Tag (e)
1+73.09 EUR
252+ 51.35 EUR
504+ 35.83 EUR
1008+ 33.33 EUR
DMT3-695-2.4LCoilcraftPower Inductors - Leaded 695uH Unshld 2.4A 550mOhms
auf Bestellung 1 Stücke:
Lieferzeit 14-28 Tag (e)
1+68.41 EUR
252+ 48.07 EUR
504+ 33.54 EUR
1008+ 31.17 EUR
DMT3-77-8LCoilcraftPower Inductors - Leaded 77uH Unshld - 8A 40mOhms
auf Bestellung 5 Stücke:
Lieferzeit 14-28 Tag (e)
1+54.08 EUR
252+ 38.01 EUR
504+ 26.52 EUR
DMT3002LPS-13Diodes IncorporatedDescription: MOSFET N-CH 30V 100A PWRDI5060-8
Produkt ist nicht verfügbar
DMT3002LPS-13Diodes IncorporatedMOSFET MOSFET BVDSS: 31V-40V
Produkt ist nicht verfügbar
DMT3003LFG-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 18A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMT3003LFG-13Diodes IncorporatedDescription: MOSFET NCH 30V 22A POWERDI
Produkt ist nicht verfügbar
DMT3003LFG-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 18A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT3003LFG-13Diodes IncorporatedMOSFET MOSFET BVDSS: 31V-40V
Produkt ist nicht verfügbar
DMT3003LFG-7Diodes IncorporatedDescription: MOSFET N-CH 30V 22A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+0.73 EUR
6000+ 0.69 EUR
Mindestbestellmenge: 2000
DMT3003LFG-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 18A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT3003LFG-7Diodes IncorporatedMOSFET MOSFET BVDSS: 31V-40V
auf Bestellung 2580 Stücke:
Lieferzeit 14-28 Tag (e)
28+1.91 EUR
33+ 1.59 EUR
100+ 1.15 EUR
500+ 0.96 EUR
1000+ 0.82 EUR
2000+ 0.72 EUR
4000+ 0.69 EUR
Mindestbestellmenge: 28
DMT3003LFG-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 18A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
DMT3003LFG-7Diodes IncorporatedDescription: MOSFET N-CH 30V 22A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7688 Stücke:
Lieferzeit 21-28 Tag (e)
14+1.92 EUR
16+ 1.65 EUR
100+ 1.15 EUR
500+ 0.96 EUR
1000+ 0.81 EUR
Mindestbestellmenge: 14
DMT3003LFGQ-13Diodes IncorporatedMOSFET MOSFET BVDSS 25V-30V
Produkt ist nicht verfügbar
DMT3003LFGQ-13Diodes IncorporatedDescription: MOSFET BVDSS: 25V-30V POWERDI333
Produkt ist nicht verfügbar
DMT3003LFGQ-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 18A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT3003LFGQ-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 18A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
DMT3003LFGQ-7Diodes IncorporatedMOSFET MOSFET BVDSS 25V-30V
Produkt ist nicht verfügbar
DMT3003LFGQ-7Diodes IncorporatedDescription: MOSFET BVDSS: 25V-30V POWERDI333
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
DMT3004LFG-13Diodes IncorporatedMOSFET MOSFET BVDSS: 31V-40V
Produkt ist nicht verfügbar
DMT3004LFG-13Diodes IncorporatedDescription: MOSFET NCH 30V 10.4A POWERDI
Produkt ist nicht verfügbar
DMT3004LFG-7Diodes IncorporatedDescription: MOSFET NCH 30V 10.4A POWERDI
Produkt ist nicht verfügbar
DMT3004LFG-7Diodes IncorporatedMOSFET MOSFET BVDSS: 31V-40V
Produkt ist nicht verfügbar
DMT3004LPS-13Diodes IncorporatedDescription: MOSFET N-CH 30V 21A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
12+2.21 EUR
15+ 1.8 EUR
100+ 1.4 EUR
500+ 1.19 EUR
1000+ 0.97 EUR
Mindestbestellmenge: 12
DMT3004LPS-13Diodes IncorporatedMOSFET 30V N-Ch Enh FET
Produkt ist nicht verfügbar
DMT3004LPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W
Mounting: SMD
Power dissipation: 2.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 43.7nC
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 180A
Case: PowerDI5060-8
Drain-source voltage: 30V
Drain current: 17A
On-state resistance: 6mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT3004LPS-13Diodes IncorporatedDescription: MOSFET N-CH 30V 21A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.91 EUR
Mindestbestellmenge: 2500
DMT3004LPS-13Diodes IncTrans MOSFET N-CH 30V 21A 8-Pin PowerDI 5060 T/R
Produkt ist nicht verfügbar
DMT3004LPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W
Mounting: SMD
Power dissipation: 2.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 43.7nC
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 180A
Case: PowerDI5060-8
Drain-source voltage: 30V
Drain current: 17A
On-state resistance: 6mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT3006LDK-7Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V
auf Bestellung 2899 Stücke:
Lieferzeit 14-28 Tag (e)
46+1.14 EUR
54+ 0.97 EUR
100+ 0.68 EUR
500+ 0.53 EUR
1000+ 0.43 EUR
3000+ 0.36 EUR
9000+ 0.34 EUR
Mindestbestellmenge: 46
DMT3006LDK-7Diodes IncorporatedDescription: MOSFET N-CH 30V 17.1A/46.2A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 46.2A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
auf Bestellung 5804 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.12 EUR
27+ 0.96 EUR
100+ 0.67 EUR
500+ 0.52 EUR
1000+ 0.43 EUR
Mindestbestellmenge: 24
DMT3006LDK-7Diodes IncorporatedDescription: MOSFET N-CH 30V 17.1A/46.2A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 46.2A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.38 EUR
Mindestbestellmenge: 3000
DMT3006LDV-13Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V
Produkt ist nicht verfügbar
DMT3006LDV-7Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V
Produkt ist nicht verfügbar
DMT3006LFDF-13Diodes IncorporatedDescription: MOSFET N-CH 30V 14.1A 6UDFN
Produkt ist nicht verfügbar
DMT3006LFDF-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Mounting: SMD
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 12.5A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT3006LFDF-13Diodes IncTrans MOSFET N-CH 30V 14.1A 6-Pin UDFN EP T/R
Produkt ist nicht verfügbar
DMT3006LFDF-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Mounting: SMD
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 12.5A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMT3006LFDF-13Diodes IncorporatedMOSFET MOSFET BVDSS: 31V-40V
Produkt ist nicht verfügbar
DMT3006LFDF-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Mounting: SMD
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 12.5A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMT3006LFDF-7Diodes IncorporatedDescription: MOSFET N-CH 30V 14.1A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 125176 Stücke:
Lieferzeit 21-28 Tag (e)
22+1.22 EUR
25+ 1.05 EUR
100+ 0.73 EUR
500+ 0.57 EUR
1000+ 0.46 EUR
Mindestbestellmenge: 22
DMT3006LFDF-7Diodes IncorporatedMOSFET MOSFET BVDSS: 31V-40V
auf Bestellung 54769 Stücke:
Lieferzeit 14-28 Tag (e)
44+1.21 EUR
54+ 0.98 EUR
100+ 0.73 EUR
500+ 0.57 EUR
1000+ 0.47 EUR
3000+ 0.37 EUR
9000+ 0.36 EUR
Mindestbestellmenge: 44
DMT3006LFDF-7Diodes IncorporatedDescription: MOSFET N-CH 30V 14.1A 6UDFN
Packaging: Tape & Box (TB)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 141000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.41 EUR
6000+ 0.39 EUR
9000+ 0.36 EUR
Mindestbestellmenge: 3000
DMT3006LFDF-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Mounting: SMD
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 12.5A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT3006LFDF-7Diodes IncTrans MOSFET N-CH 30V 14.1A 6-Pin UDFN EP T/R
Produkt ist nicht verfügbar
DMT3006LFDFQ-7Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 3K
Produkt ist nicht verfügbar
DMT3006LFDFQ-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Mounting: SMD
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 12.5A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT3006LFDFQ-7Diodes IncMOSFET BVDSS: 25V30V U-DFN2020-6 T&R 3K
Produkt ist nicht verfügbar
DMT3006LFDFQ-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Mounting: SMD
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 12.5A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMT3006LFDFQ-7Diodes IncorporatedDescription: MOSFET BVDSS: 25V~30V U-DFN2020-
Produkt ist nicht verfügbar
DMT3006LFG-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Mounting: SMD
Power dissipation: 27.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 12.8A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT3006LFG-13Diodes IncTrans MOSFET N-CH 30V 16A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT3006LFG-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Mounting: SMD
Power dissipation: 27.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 12.8A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMT3006LFG-13Diodes IncorporatedDescription: MOSFET N-CH 30V PWRDI3333
Produkt ist nicht verfügbar
DMT3006LFG-13Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V
Produkt ist nicht verfügbar
DMT3006LFG-7Diodes IncorporatedDescription: MOSFET N-CH 30V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.6A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+0.72 EUR
6000+ 0.69 EUR
10000+ 0.64 EUR
Mindestbestellmenge: 2000
DMT3006LFG-7Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V
auf Bestellung 2000 Stücke:
Lieferzeit 14-28 Tag (e)
28+1.91 EUR
31+ 1.69 EUR
100+ 1.22 EUR
500+ 0.99 EUR
1000+ 0.82 EUR
2000+ 0.74 EUR
4000+ 0.73 EUR
Mindestbestellmenge: 28
DMT3006LFG-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Mounting: SMD
Power dissipation: 27.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 12.8A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT3006LFG-7Diodes IncorporatedDescription: MOSFET N-CH 30V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.6A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 31626 Stücke:
Lieferzeit 21-28 Tag (e)
14+1.9 EUR
16+ 1.65 EUR
100+ 1.14 EUR
500+ 0.96 EUR
1000+ 0.81 EUR
Mindestbestellmenge: 14
DMT3006LFG-7Diodes IncTrans MOSFET N-CH 30V 16A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT3006LFG-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Mounting: SMD
Power dissipation: 27.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 12.8A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
DMT3006LFV-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Case: PowerDI3333-8
Kind of package: reel; tape
Pulsed drain current: 90A
Mounting: SMD
Drain-source voltage: 30V
Drain current: 45A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 16.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
DMT3006LFV-13Diodes IncorporatedDescription: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.63 EUR
6000+ 0.6 EUR
9000+ 0.55 EUR
Mindestbestellmenge: 3000
DMT3006LFV-13Diodes IncTrans MOSFET N-CH 30V 60A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT3006LFV-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Case: PowerDI3333-8
Kind of package: reel; tape
Pulsed drain current: 90A
Mounting: SMD
Drain-source voltage: 30V
Drain current: 45A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 16.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMT3006LFV-13Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V
auf Bestellung 2700 Stücke:
Lieferzeit 14-28 Tag (e)
32+1.67 EUR
36+ 1.45 EUR
100+ 1 EUR
500+ 0.84 EUR
1000+ 0.71 EUR
3000+ 0.63 EUR
6000+ 0.6 EUR
Mindestbestellmenge: 32
DMT3006LFV-13Diodes IncorporatedDescription: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
auf Bestellung 11940 Stücke:
Lieferzeit 21-28 Tag (e)
16+1.66 EUR
19+ 1.44 EUR
100+ 1 EUR
500+ 0.83 EUR
1000+ 0.71 EUR
Mindestbestellmenge: 16
DMT3006LFV-7Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V
Produkt ist nicht verfügbar
DMT3006LFV-7Diodes IncorporatedDescription: MOSFET N-CH 30V 60A POWERDI3333
Produkt ist nicht verfügbar
DMT3006LFVQ-13Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V
Produkt ist nicht verfügbar
DMT3006LFVQ-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Mounting: SMD
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 45A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMT3006LFVQ-13Diodes IncorporatedDescription: MOSFET N-CH 30V 60A POWERDI3333
Produkt ist nicht verfügbar
DMT3006LFVQ-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Mounting: SMD
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 45A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT3006LFVQ-13Diodes IncTrans MOSFET N-CH 30V 60A Automotive T/R
Produkt ist nicht verfügbar
DMT3006LFVQ-7Diodes IncorporatedDescription: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2687 Stücke:
Lieferzeit 21-28 Tag (e)
15+1.82 EUR
17+ 1.57 EUR
100+ 1.09 EUR
500+ 0.91 EUR
1000+ 0.77 EUR
Mindestbestellmenge: 15
DMT3006LFVQ-7Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V
auf Bestellung 1998 Stücke:
Lieferzeit 14-28 Tag (e)
29+1.84 EUR
33+ 1.58 EUR
100+ 1.1 EUR
500+ 0.92 EUR
1000+ 0.78 EUR
2000+ 0.69 EUR
Mindestbestellmenge: 29
DMT3006LFVQ-7Diodes IncorporatedDescription: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+0.69 EUR
Mindestbestellmenge: 2000
DMT3006LPB-13Diodes IncorporatedMOSFET MOSFET BVDSS 25V-30V
auf Bestellung 1005 Stücke:
Lieferzeit 14-28 Tag (e)
33+1.6 EUR
37+ 1.41 EUR
100+ 0.96 EUR
500+ 0.8 EUR
1000+ 0.7 EUR
2500+ 0.59 EUR
5000+ 0.57 EUR
Mindestbestellmenge: 33
DMT3006LPB-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W
Mounting: SMD
Power dissipation: 1.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80...100A
Case: PowerDI5060-8
Drain-source voltage: 30V
Drain current: 9/11A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT3006LPB-13Diodes IncTrans MOSFET N-CH 30V 11A/14A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT3006LPB-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W
Mounting: SMD
Power dissipation: 1.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80...100A
Case: PowerDI5060-8
Drain-source voltage: 30V
Drain current: 9/11A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT3006LPB-13Diodes IncorporatedDescription: MOSFET BVDSS: 25V-30V POWERDI506
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.67 EUR
Mindestbestellmenge: 2500
DMT3006LPS-13Diodes IncorporatedDescription: MOSFET N-CH 30V 16A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 29988 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.51 EUR
21+ 1.29 EUR
100+ 0.9 EUR
500+ 0.7 EUR
1000+ 0.57 EUR
Mindestbestellmenge: 18
DMT3006LPS-13Diodes IncorporatedDescription: MOSFET N-CH 30V 16A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 27500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.51 EUR
5000+ 0.48 EUR
12500+ 0.45 EUR
25000+ 0.44 EUR
Mindestbestellmenge: 2500
DMT3006LPS-13Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V
auf Bestellung 2500 Stücke:
Lieferzeit 14-28 Tag (e)
35+1.52 EUR
40+ 1.3 EUR
100+ 0.91 EUR
500+ 0.71 EUR
1000+ 0.57 EUR
2500+ 0.54 EUR
10000+ 0.49 EUR
Mindestbestellmenge: 35
DMT3008LFDF-13Diodes IncorporatedMOSFET 30V N-Ch Enh FET 20Vgs 0.5W 70A
Produkt ist nicht verfügbar
DMT3008LFDF-13Diodes IncorporatedDescription: MOSFET N-CH 30V 12A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 15 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
10000+0.65 EUR
Mindestbestellmenge: 10000
DMT3008LFDF-7Diodes IncorporatedMOSFET 30V N-Ch Enh FET 20Vgs 0.5W 70A
Produkt ist nicht verfügbar
DMT3008LFDF-7Diodes IncorporatedDescription: MOSFET N-CH 30V 12A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.75 EUR
6000+ 0.71 EUR
9000+ 0.65 EUR
Mindestbestellmenge: 3000
DMT3009LDT-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W
Mounting: SMD
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 80A
Case: V-DFN3030-8
Drain-source voltage: 30V
Drain current: 11A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT3009LDT-7Diodes IncTrans MOSFET N-CH 30V 30A 8-Pin VDFN T/R
Produkt ist nicht verfügbar
DMT3009LDT-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W
Mounting: SMD
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 80A
Case: V-DFN3030-8
Drain-source voltage: 30V
Drain current: 11A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMT3009LDT-7Diodes IncorporatedDescription: MOSFET 2N-CH 30V 30A 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 14.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type K)
Part Status: Active
auf Bestellung 1249834 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.13 EUR
15+ 1.75 EUR
100+ 1.36 EUR
500+ 1.16 EUR
1000+ 0.94 EUR
Mindestbestellmenge: 13
DMT3009LDT-7Diodes IncorporatedMOSFET MOSFET BVDSS
auf Bestellung 3587 Stücke:
Lieferzeit 14-28 Tag (e)
25+2.13 EUR
30+ 1.76 EUR
100+ 1.37 EUR
500+ 1.16 EUR
1000+ 0.95 EUR
3000+ 0.93 EUR
Mindestbestellmenge: 25
DMT3009LDT-7Diodes IncorporatedDescription: MOSFET 2N-CH 30V 30A 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 14.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type K)
Part Status: Active
auf Bestellung 1248000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.89 EUR
6000+ 0.84 EUR
9000+ 0.8 EUR
Mindestbestellmenge: 3000
DMT3009LEV-13Diodes IncorporatedDescription: MOSFET 25V-30V POWERDI3333-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
DMT3009LEV-13Diodes IncorporatedMOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 3K
Produkt ist nicht verfügbar
DMT3009LEV-7Diodes IncorporatedDescription: MOSFET 25V-30V POWERDI3333-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
DMT3009LEV-7Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 2K
auf Bestellung 1990 Stücke:
Lieferzeit 182-196 Tag (e)
40+1.32 EUR
46+ 1.15 EUR
100+ 0.86 EUR
500+ 0.67 EUR
1000+ 0.52 EUR
2000+ 0.47 EUR
4000+ 0.44 EUR
Mindestbestellmenge: 40
DMT3009LFVW-13Diodes IncorporatedDescription: MOSFET N-CH 30V 12A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V
Produkt ist nicht verfügbar
DMT3009LFVW-13Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V
Produkt ist nicht verfügbar
DMT3009LFVW-7Diodes IncorporatedDescription: MOSFET N-CH 30V 12A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V
auf Bestellung 650 Stücke:
Lieferzeit 21-28 Tag (e)
19+1.43 EUR
21+ 1.26 EUR
100+ 0.87 EUR
500+ 0.73 EUR
Mindestbestellmenge: 19
DMT3009LFVW-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Mounting: SMD
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 10A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT3009LFVW-7Diodes IncTrans MOSFET N-CH 30V 12A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT3009LFVW-7Diodes IncorporatedDescription: MOSFET N-CH 30V 12A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V
Produkt ist nicht verfügbar
DMT3009LFVW-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Mounting: SMD
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 10A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMT3009LFVW-7Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V
auf Bestellung 2361 Stücke:
Lieferzeit 14-28 Tag (e)
36+1.45 EUR
42+ 1.26 EUR
100+ 0.88 EUR
500+ 0.73 EUR
1000+ 0.64 EUR
2000+ 0.57 EUR
4000+ 0.55 EUR
Mindestbestellmenge: 36
DMT3009LFVWQ-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Mounting: SMD
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 10A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT3009LFVWQ-13Diodes IncTrans MOSFET N-CH 30V 12A Automotive 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT3009LFVWQ-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Mounting: SMD
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 10A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMT3009LFVWQ-13Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V
Produkt ist nicht verfügbar
DMT3009LFVWQ-13Diodes IncorporatedDescription: MOSFET N-CH 30V 12A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V
Power Dissipation (Max): 2.3W (Ta), 35.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMT3009LFVWQ-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Application: automotive industry
Mounting: SMD
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Case: PowerDI®3333-8
Drain-source voltage: 30V
Drain current: 10A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMT3009LFVWQ-7Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V
auf Bestellung 1590 Stücke:
Lieferzeit 14-28 Tag (e)
32+1.67 EUR
37+ 1.44 EUR
100+ 1 EUR
500+ 0.84 EUR
1000+ 0.71 EUR
2000+ 0.63 EUR
4000+ 0.6 EUR
Mindestbestellmenge: 32
DMT3009LFVWQ-7Diodes IncorporatedDescription: MOSFET N-CH 30V 12A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V
Power Dissipation (Max): 2.3W (Ta), 35.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1290 Stücke:
Lieferzeit 21-28 Tag (e)
16+1.66 EUR
19+ 1.43 EUR
100+ 0.99 EUR
500+ 0.83 EUR
1000+ 0.71 EUR
Mindestbestellmenge: 16
DMT3009LFVWQ-7Diodes IncorporatedDescription: MOSFET N-CH 30V 12A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V
Power Dissipation (Max): 2.3W (Ta), 35.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMT3009LFVWQ-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Application: automotive industry
Mounting: SMD
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Case: PowerDI®3333-8
Drain-source voltage: 30V
Drain current: 10A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT3009LFVWQ-7Diodes IncTrans MOSFET N-CH 30V 12A Automotive 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT3009UDT-7Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V V-DFN3030-8 T&R 1.5K
Produkt ist nicht verfügbar
DMT3009UDT-7Diodes IncorporatedDescription: MOSFET 2N-CH 30V 10.6A 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta), 16W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 894pF @ 15V
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type KS)
Part Status: Active
Produkt ist nicht verfügbar
DMT3009UFVW-13Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 3K
Produkt ist nicht verfügbar
DMT3009UFVW-13Diodes IncorporatedDescription: MOSFET N-CH 30V 10.6A/30A PWRDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 10V
Power Dissipation (Max): 1.2W (Ta), 2.6W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 894 pF @ 15 V
Produkt ist nicht verfügbar
DMT3009UFVW-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; Idm: 80A; 2.6W
Mounting: SMD
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 80A
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 8.5A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT3009UFVW-7Diodes Inc30V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
DMT3009UFVW-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; Idm: 80A; 2.6W
Mounting: SMD
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 80A
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 8.5A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMT3009UFVW-7Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 2K
Produkt ist nicht verfügbar
DMT3009UFVW-7Diodes IncorporatedDescription: MOSFET N-CH 30V 10.6A/30A PWRDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 30A
Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 10V
Power Dissipation (Max): 1.2W (Ta), 2.6W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 894 pF @ 15 V
Produkt ist nicht verfügbar
DMT3011LDT-7Diodes IncorporatedMOSFET MOSFET BVDSS
Produkt ist nicht verfügbar
DMT3011LDT-7Diodes IncorporatedDescription: MOSFET 2N-CH 30V 8A/10.7A 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A, 10.7A
Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type K)
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.82 EUR
6000+ 0.77 EUR
9000+ 0.72 EUR
Mindestbestellmenge: 3000
DMT3011LDT-7Diodes IncorporatedDescription: MOSFET 2N-CH 30V 8A/10.7A 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A, 10.7A
Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type K)
Part Status: Active
auf Bestellung 17153 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.13 EUR
14+ 1.86 EUR
100+ 1.29 EUR
500+ 1.08 EUR
1000+ 0.92 EUR
Mindestbestellmenge: 13
DMT3020LDT-7Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V V-DFN3030-8 T&R 1.5K
Produkt ist nicht verfügbar
DMT3020LDV-13Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 3K
auf Bestellung 2990 Stücke:
Lieferzeit 14-28 Tag (e)
40+1.33 EUR
46+ 1.14 EUR
100+ 0.85 EUR
500+ 0.67 EUR
1000+ 0.52 EUR
3000+ 0.4 EUR
9000+ 0.39 EUR
Mindestbestellmenge: 40
DMT3020LDV-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W
Mounting: SMD
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 25A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT3020LDV-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W
Mounting: SMD
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 25A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMT3020LDV-7Diodes IncorporatedDescription: MOSFET 2N-CH 30V 32A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Part Status: Active
auf Bestellung 44000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+0.44 EUR
6000+ 0.42 EUR
10000+ 0.39 EUR
Mindestbestellmenge: 2000
DMT3020LDV-7Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 2K
auf Bestellung 3309 Stücke:
Lieferzeit 14-28 Tag (e)
40+1.33 EUR
46+ 1.14 EUR
100+ 0.79 EUR
500+ 0.62 EUR
1000+ 0.51 EUR
2000+ 0.39 EUR
Mindestbestellmenge: 40
DMT3020LDV-7Diodes IncorporatedDescription: MOSFET 2N-CH 30V 32A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Part Status: Active
auf Bestellung 44814 Stücke:
Lieferzeit 21-28 Tag (e)
20+1.3 EUR
24+ 1.11 EUR
100+ 0.77 EUR
500+ 0.6 EUR
1000+ 0.49 EUR
Mindestbestellmenge: 20
DMT3020LFCL-7Diodes IncorporatedDescription: MOSFET N-CH 30V 7.6A 6UDFN
Produkt ist nicht verfügbar
DMT3020LFCL-7Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V
Produkt ist nicht verfügbar
DMT3020LFDB-13Diodes IncorporatedDescription: MOSFET 2N-CHA 30V 7.7A DFN2020
Produkt ist nicht verfügbar
DMT3020LFDB-13Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V
Produkt ist nicht verfügbar
DMT3020LFDB-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT3020LFDB-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMT3020LFDB-7Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V
auf Bestellung 6658 Stücke:
Lieferzeit 14-28 Tag (e)
34+1.55 EUR
40+ 1.32 EUR
100+ 0.92 EUR
500+ 0.72 EUR
1000+ 0.58 EUR
3000+ 0.5 EUR
Mindestbestellmenge: 34
DMT3020LFDB-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT3020LFDB-7Diodes IncorporatedDescription: MOSFET 2N-CH 30V 7.7A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.7A
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 290806 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.53 EUR
20+ 1.31 EUR
100+ 0.91 EUR
500+ 0.71 EUR
1000+ 0.58 EUR
Mindestbestellmenge: 17
DMT3020LFDB-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMT3020LFDB-7DIODES INC.Description: DIODES INC. - DMT3020LFDB-7 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 7.7 A, 7.7 A, 0.02 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 7.7A
Dauer-Drainstrom Id, p-Kanal: 7.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 7.7A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.02ohm
Verlustleistung, p-Kanal: 700mW
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: UDFN2020
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.02ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 700mW
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 1534 Stücke:
Lieferzeit 14-21 Tag (e)
DMT3020LFDB-7Diodes IncorporatedDescription: MOSFET 2N-CH 30V 7.7A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.7A
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 288000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.52 EUR
6000+ 0.49 EUR
9000+ 0.45 EUR
30000+ 0.44 EUR
Mindestbestellmenge: 3000
DMT3020LFDB-7DIODES INC.Description: DIODES INC. - DMT3020LFDB-7 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 7.7 A, 7.7 A, 0.02 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 7.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 7.7A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.02ohm
Verlustleistung, p-Kanal: 700mW
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: UDFN2020
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.02ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 700mW
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 1534 Stücke:
Lieferzeit 14-21 Tag (e)
DMT3020LFDBQ-13Diodes IncDual N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
DMT3020LFDBQ-13Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 10K
auf Bestellung 9500 Stücke:
Lieferzeit 14-28 Tag (e)
38+1.38 EUR
49+ 1.08 EUR
100+ 0.83 EUR
500+ 0.69 EUR
1000+ 0.53 EUR
10000+ 0.44 EUR
Mindestbestellmenge: 38
DMT3020LFDBQ-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT3020LFDBQ-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMT3020LFDBQ-7Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 3K
auf Bestellung 2360 Stücke:
Lieferzeit 14-28 Tag (e)
39+1.35 EUR
44+ 1.21 EUR
100+ 1.03 EUR
500+ 0.99 EUR
1000+ 0.88 EUR
3000+ 0.74 EUR
9000+ 0.73 EUR
Mindestbestellmenge: 39
DMT3020LFDBQ-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT3020LFDBQ-7Diodes IncorporatedDescription: MOSFET 2N-CH 30V 7.7A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2650 Stücke:
Lieferzeit 21-28 Tag (e)
20+1.33 EUR
23+ 1.13 EUR
100+ 0.79 EUR
500+ 0.62 EUR
1000+ 0.5 EUR
Mindestbestellmenge: 20
DMT3020LFDBQ-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMT3020LFDBQ-7Diodes IncDual N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
DMT3020LFDBQ-7Diodes IncorporatedDescription: MOSFET 2N-CH 30V 7.7A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMT3020LFDF-13Diodes IncorporatedDescription: MOSFET NCH 30V 8.4A UDFN2020
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
DMT3020LFDF-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Mounting: SMD
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMT3020LFDF-13Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V
auf Bestellung 9980 Stücke:
Lieferzeit 14-28 Tag (e)
DMT3020LFDF-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Mounting: SMD
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT3020LFDF-7Diodes IncorporatedDescription: MOSFET N-CH 30V 8.4A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 700mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V
auf Bestellung 92654 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.51 EUR
21+ 1.29 EUR
100+ 0.89 EUR
500+ 0.7 EUR
1000+ 0.57 EUR
Mindestbestellmenge: 18
DMT3020LFDF-7Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V
auf Bestellung 3000 Stücke:
Lieferzeit 14-28 Tag (e)
35+1.52 EUR
41+ 1.29 EUR
100+ 0.9 EUR
500+ 0.7 EUR
1000+ 0.57 EUR
3000+ 0.49 EUR
Mindestbestellmenge: 35
DMT3020LFDF-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Mounting: SMD
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT3020LFDF-7Diodes IncorporatedDescription: MOSFET N-CH 30V 8.4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 700mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V
auf Bestellung 90000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.51 EUR
6000+ 0.48 EUR
9000+ 0.45 EUR
30000+ 0.44 EUR
Mindestbestellmenge: 3000
DMT3020LFDF-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Mounting: SMD
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMT3020LFDFQ-13Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 10K
Produkt ist nicht verfügbar
DMT3020LFDFQ-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Application: automotive industry
Mounting: SMD
Power dissipation: 0.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 6.7A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT3020LFDFQ-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Application: automotive industry
Mounting: SMD
Power dissipation: 0.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 6.7A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMT3020LFDFQ-7Diodes IncorporatedDescription: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 156000 Stücke:
Lieferzeit 21-28 Tag (e)
23+1.17 EUR
26+ 1.01 EUR
100+ 0.7 EUR
500+ 0.55 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 23
DMT3020LFDFQ-7Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 3K
auf Bestellung 3000 Stücke:
Lieferzeit 14-28 Tag (e)
43+1.23 EUR
55+ 0.96 EUR
100+ 0.74 EUR
500+ 0.61 EUR
1000+ 0.5 EUR
3000+ 0.43 EUR
9000+ 0.42 EUR
Mindestbestellmenge: 43
DMT3020LFDFQ-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Mounting: SMD
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT3020LFDFQ-7Diodes IncorporatedDescription: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 156000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.4 EUR
6000+ 0.38 EUR
9000+ 0.35 EUR
30000+ 0.34 EUR
Mindestbestellmenge: 3000
DMT3020LFDFQ-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Mounting: SMD
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMT3020LFVW-7Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V
Produkt ist nicht verfügbar
DMT3020LFVW-7Diodes IncorporatedDescription: MOSFET BVDSS: 25V-30V POWERDI333
Produkt ist nicht verfügbar
DMT3020LSD-13Diodes IncorporatedDescription: MOSFET 2N-CH 30V 16A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 47375 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.46 EUR
21+ 1.25 EUR
100+ 0.87 EUR
500+ 0.68 EUR
1000+ 0.55 EUR
Mindestbestellmenge: 18
DMT3020LSD-13Diodes IncorporatedDescription: MOSFET 2N-CH 30V 16A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 45000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.49 EUR
5000+ 0.47 EUR
12500+ 0.43 EUR
25000+ 0.42 EUR
Mindestbestellmenge: 2500
DMT3020LSD-13Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V SO-8 T&R 2.5K
auf Bestellung 2184 Stücke:
Lieferzeit 14-28 Tag (e)
36+1.45 EUR
42+ 1.26 EUR
100+ 0.94 EUR
500+ 0.74 EUR
1000+ 0.57 EUR
2500+ 0.52 EUR
10000+ 0.48 EUR
Mindestbestellmenge: 36
DMT3020LSDQ-13Diodes IncTrans MOSFET N-CH 30V 16A Automotive 8-Pin SO T/R
Produkt ist nicht verfügbar
DMT3020LSDQ-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Mounting: SMD
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Case: SO8
Drain-source voltage: 30V
Drain current: 13A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT3020LSDQ-13Diodes IncorporatedDescription: MOSFET 2N-CH 30V 16A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1548758 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.53 EUR
20+ 1.32 EUR
100+ 0.92 EUR
500+ 0.72 EUR
1000+ 0.58 EUR
Mindestbestellmenge: 17
DMT3020LSDQ-13Diodes IncorporatedMOSFET MOSFET BVDSS: 8V-24V SO-8 T&R 2.5K
auf Bestellung 53760 Stücke:
Lieferzeit 14-28 Tag (e)
38+1.4 EUR
44+ 1.19 EUR
100+ 0.87 EUR
500+ 0.71 EUR
1000+ 0.54 EUR
2500+ 0.5 EUR
10000+ 0.46 EUR
Mindestbestellmenge: 38
DMT3020LSDQ-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Mounting: SMD
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Case: SO8
Drain-source voltage: 30V
Drain current: 13A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT3020LSDQ-13Diodes IncorporatedDescription: MOSFET 2N-CH 30V 16A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 1547500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.52 EUR
5000+ 0.49 EUR
12500+ 0.46 EUR
25000+ 0.45 EUR
Mindestbestellmenge: 2500
DMT3020UFDB-13Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 10K
Produkt ist nicht verfügbar
DMT3020UFDB-13DIODES INCORPORATEDCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Mounting: SMD
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8.8nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 35A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 5.2A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMT3020UFDB-13Diodes IncMOSFET BVDSS: 25V30V U-DFN2020-6 T&R 10K
Produkt ist nicht verfügbar
DMT3020UFDB-13DIODES INCORPORATEDCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Mounting: SMD
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8.8nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 35A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 5.2A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
DMT3020UFDB-7Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 3K
Produkt ist nicht verfügbar
DMT3022UEV-13Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 3K
Produkt ist nicht verfügbar
DMT3022UEV-13Diodes IncorporatedDescription: MOSFET 2N-CH 30V 17A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 903pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXD)
Produkt ist nicht verfügbar
DMT3022UEV-7Diodes IncorporatedDescription: MOSFET 2N-CH 30V 17A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 903pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXD)
Produkt ist nicht verfügbar
DMT3022UEV-7Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 2K
Produkt ist nicht verfügbar
DMT30M9LPS-13Diodes IncorporatedDescription: MOSFET BVDSS: 25V-30V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+2.94 EUR
5000+ 2.83 EUR
Mindestbestellmenge: 2500
DMT30M9LPS-13Diodes IncorporatedMOSFET MOSFET BVDSS 25V-30V
Produkt ist nicht verfügbar
DMT30M9LPS-13Diodes IncTrans MOSFET N-CH 30V 320A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT30M9LPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Mounting: SMD
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 160.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: PowerDI5060-8
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 1.6mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT30M9LPS-13Diodes IncorporatedDescription: MOSFET BVDSS: 25V-30V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.53 EUR
10+ 5.41 EUR
100+ 4.31 EUR
500+ 3.65 EUR
1000+ 3.09 EUR
Mindestbestellmenge: 4
DMT30M9LPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Mounting: SMD
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 160.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: PowerDI5060-8
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 1.6mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT31M6LPS-13Diodes IncorporatedMOSFET MOSFET BVDSS 25V-30V
auf Bestellung 850 Stücke:
Lieferzeit 14-28 Tag (e)
DMT31M6LPS-13Diodes IncTrans MOSFET N-CH 30V 35.8A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT31M6LPS-13Diodes IncorporatedDescription: MOSFET N-CH 30V 35.8A PWRDI5060
Produkt ist nicht verfügbar
DMT31M6LPS-13DIODES INCORPORATEDDMT31M6LPS-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMT31M7LPS-13Diodes IncorporatedDescription: MOSFET N-CH 30V 30A PWRDI5060
Produkt ist nicht verfügbar
DMT32M4LFG-13Diodes IncorporatedDescription: MOSFET BVDSS: 25V~30V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 1.1W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4366 pF @ 15 V
Produkt ist nicht verfügbar
DMT32M4LFG-7DIODES INC.Description: DIODES INC. - DMT32M4LFG-7 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 0.0014 ohm, PowerDI 3333, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 2.6W
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 2.6W
Bauform - Transistor: PowerDI 3333
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0014ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0014ohm
SVHC: Lead (14-Jun-2023)
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
DMT32M4LFG-7Diodes IncorporatedDescription: MOSFET BVDSS: 25V~30V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 1.1W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4366 pF @ 15 V
Produkt ist nicht verfügbar
DMT32M4LPSW-13DIODES INC.Description: DIODES INC. - DMT32M4LPSW-13 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 0.0015 ohm, PowerDI 5060, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 83W
Bauform - Transistor: PowerDI 5060
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0015ohm
SVHC: Lead (14-Jun-2023)
auf Bestellung 2475 Stücke:
Lieferzeit 14-21 Tag (e)
DMT32M4LPSW-13DIODES INC.Description: DIODES INC. - DMT32M4LPSW-13 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 0.0015 ohm, PowerDI 5060, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 83W
Anzahl der Pins: 8Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0015ohm
auf Bestellung 2475 Stücke:
Lieferzeit 14-21 Tag (e)
DMT32M4LPSW-13Diodes IncorporatedDescription: MOSFET BVDSS: 25V~30V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 15 V
Produkt ist nicht verfügbar
DMT32M5LFG-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Pulsed drain current: 350A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 67.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMT32M5LFG-13Diodes IncorporatedDescription: MOSFET N-CH 30V 30A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 831000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+1.11 EUR
6000+ 1.06 EUR
9000+ 1.01 EUR
Mindestbestellmenge: 3000
DMT32M5LFG-13Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V
auf Bestellung 3000 Stücke:
Lieferzeit 14-28 Tag (e)
20+2.7 EUR
24+ 2.22 EUR
100+ 1.72 EUR
500+ 1.46 EUR
1000+ 1.19 EUR
3000+ 1.08 EUR
6000+ 1.07 EUR
Mindestbestellmenge: 20
DMT32M5LFG-13Diodes IncorporatedDescription: MOSFET N-CH 30V 30A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 833856 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.68 EUR
12+ 2.2 EUR
100+ 1.71 EUR
500+ 1.45 EUR
1000+ 1.18 EUR
Mindestbestellmenge: 10
DMT32M5LFG-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Pulsed drain current: 350A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 67.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMT32M5LFG-7Diodes IncorporatedDescription: MOSFET N-CH 30V 30A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 29928 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.68 EUR
12+ 2.2 EUR
100+ 1.71 EUR
500+ 1.45 EUR
1000+ 1.18 EUR
Mindestbestellmenge: 10
DMT32M5LFG-7Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V
auf Bestellung 910 Stücke:
Lieferzeit 14-28 Tag (e)
20+2.7 EUR
24+ 2.22 EUR
100+ 1.72 EUR
500+ 1.46 EUR
1000+ 1.19 EUR
2000+ 1.16 EUR
Mindestbestellmenge: 20
DMT32M5LFG-7Diodes IncorporatedDescription: MOSFET N-CH 30V 30A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 28000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+1.11 EUR
6000+ 1.06 EUR
10000+ 1.01 EUR
Mindestbestellmenge: 2000
DMT32M5LFG-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Pulsed drain current: 350A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 67.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
DMT32M5LFG-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Pulsed drain current: 350A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 67.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMT32M5LPS-13DIODES INCORPORATEDDMT32M5LPS-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMT32M5LPS-13Diodes IncorporatedDescription: MOSFET N-CH 30V 150A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
auf Bestellung 312475 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.11 EUR
15+ 1.83 EUR
100+ 1.27 EUR
500+ 1.06 EUR
1000+ 0.9 EUR
Mindestbestellmenge: 13
DMT32M5LPS-13Diodes IncTrans MOSFET N-CH 30V 150A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT32M5LPS-13Diodes IncorporatedDescription: MOSFET N-CH 30V 150A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
auf Bestellung 310000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.8 EUR
5000+ 0.76 EUR
12500+ 0.71 EUR
25000+ 0.7 EUR
Mindestbestellmenge: 2500
DMT32M5LPS-13Diodes IncorporatedMOSFET MOSFETBVDSS: 25V-30V
auf Bestellung 2500 Stücke:
Lieferzeit 14-28 Tag (e)
25+2.13 EUR
29+ 1.85 EUR
100+ 1.28 EUR
500+ 1.07 EUR
1000+ 0.91 EUR
2500+ 0.79 EUR
5000+ 0.77 EUR
Mindestbestellmenge: 25
DMT32M5LPSW-13Diodes IncorporatedMOSFET MOSFET BVDSS: 25V~30V PowerDI5060-8 T&R 2.5K
Produkt ist nicht verfügbar
DMT32M5LPSW-13Diodes IncorporatedDescription: MOSFET BVDSS: 25V~30V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4389 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.09 EUR
Mindestbestellmenge: 2500
DMT32M6LDG-13Diodes IncorporatedDescription: MOSFET 2N-CH 30V 21A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 47A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2101pF @ 15V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 400µA
Supplier Device Package: PowerDI3333-8 (Type G)
Part Status: Active
auf Bestellung 23990 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.59 EUR
10+ 2.93 EUR
100+ 2.28 EUR
500+ 1.93 EUR
1000+ 1.58 EUR
Mindestbestellmenge: 8
DMT32M6LDG-13Diodes IncorporatedDescription: MOSFET 2N-CH 30V 21A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 47A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2101pF @ 15V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 400µA
Supplier Device Package: PowerDI3333-8 (Type G)
Part Status: Active
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+1.48 EUR
6000+ 1.41 EUR
9000+ 1.35 EUR
Mindestbestellmenge: 3000
DMT32M6LDG-13Diodes IncorporatedMOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 3K
Produkt ist nicht verfügbar
DMT32M6LDG-7Diodes IncorporatedDescription: MOSFET 2N-CH 30V 21A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 47A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2101pF @ 15V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 400µA
Supplier Device Package: PowerDI3333-8 (Type G)
Part Status: Active
auf Bestellung 7990 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.59 EUR
10+ 2.93 EUR
100+ 2.28 EUR
500+ 1.93 EUR
1000+ 1.58 EUR
Mindestbestellmenge: 8
DMT32M6LDG-7Diodes IncorporatedMOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 2K
Produkt ist nicht verfügbar
DMT32M6LDG-7Diodes IncorporatedDescription: MOSFET 2N-CH 30V 21A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 47A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2101pF @ 15V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 400µA
Supplier Device Package: PowerDI3333-8 (Type G)
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+1.48 EUR
6000+ 1.41 EUR
Mindestbestellmenge: 2000
DMT334R2S474M3DTA0Murata ElectronicsSupercapacitors / Ultracapacitors EDLC 470mF 4.2V 20% 21x14x3.5mm
Produkt ist nicht verfügbar
DMT334R2S474M3DTA0Murata ElectronicsCap Supercap 0.47F 4.2V 20% (21 X 14 X 3.5mm) SMD Gull Wing Flat 0.13 Ohm 2000h 85C Bulk
Produkt ist nicht verfügbar
DMT334R2S474M3DTA0CAP-XX Ltd SupercapacitorsDescription: CAP 470MF 4.2V -40-+85C
Packaging: Bulk
Tolerance: ±20%
Package / Case: 3-SMD
Size / Dimension: 0.827" L x 0.551" W (21.00mm x 14.00mm)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
ESR (Equivalent Series Resistance): 156mOhm @ 1kHz
Height - Seated (Max): 0.150" (3.80mm)
Part Status: Active
Capacitance: 470 mF
Voltage - Rated: 4.2 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
5+26 EUR
Mindestbestellmenge: 5
DMT34M1LPS-13Diodes IncorporatedDescription: MOSFET N-CH 30V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 39
Input Capacitance (Ciss) (Max) @ Vds: 2242
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Produkt ist nicht verfügbar
DMT34M1LPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; 1.3W; PowerDI®5060-8
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 5.2mΩ
Drain current: 80A
Drain-source voltage: 30V
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerDI®5060-8
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
DMT34M1LPS-13Diodes IncorporatedDescription: MOSFET N-CH 30V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 39
Input Capacitance (Ciss) (Max) @ Vds: 2242
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Produkt ist nicht verfügbar
DMT34M1LPS-13DIODES INC.Description: DIODES INC. - DMT34M1LPS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 0.0026 ohm, PowerDI 5060, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 42W
Bauform - Transistor: PowerDI 5060
Anzahl der Pins: 8Pin(s)
Produktpalette: PW Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0026ohm
SVHC: Lead (14-Jun-2023)
auf Bestellung 2490 Stücke:
Lieferzeit 14-21 Tag (e)
DMT34M1LPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; 1.3W; PowerDI®5060-8
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 5.2mΩ
Drain current: 80A
Drain-source voltage: 30V
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerDI®5060-8
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMT34M1LPS-13Diodes ZetexTrans MOSFET N-CH 30V 21A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT34M1LPS-13Diodes IncorporatedMOSFET MOSFETBVDSS: 25V-30V
auf Bestellung 2485 Stücke:
Lieferzeit 14-28 Tag (e)
34+1.55 EUR
39+ 1.33 EUR
100+ 0.93 EUR
500+ 0.77 EUR
1000+ 0.66 EUR
2500+ 0.58 EUR
5000+ 0.55 EUR
Mindestbestellmenge: 34
DMT34M1LPS-13Diodes IncTrans MOSFET N-CH 30V 21A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT34M1LPS-13DIODES INC.Description: DIODES INC. - DMT34M1LPS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 0.0026 ohm, PowerDI 5060, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 42W
Bauform - Transistor: PowerDI 5060
Anzahl der Pins: 8Pin(s)
Produktpalette: PW Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0026ohm
SVHC: Lead (14-Jun-2023)
auf Bestellung 2490 Stücke:
Lieferzeit 14-21 Tag (e)
DMT34M2LPS-13Diodes ZetexTrans MOSFET N-CH 30V 21A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT34M2LPS-13Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V
Produkt ist nicht verfügbar
DMT34M2LPS-13Diodes IncorporatedDescription: MOSFET BVDSS: 25V 30V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 39
Input Capacitance (Ciss) (Max) @ Vds: 2242
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Produkt ist nicht verfügbar
DMT34M8LFDE-13Diodes IncorporatedDescription: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 15 V
Produkt ist nicht verfügbar
DMT34M8LFDE-13Diodes IncorporatedMOSFET MOSFET BVDSS: 25V~30V U-DFN2020-6 T&R 10K
Produkt ist nicht verfügbar
DMT34M8LFDE-7Diodes IncorporatedMOSFET MOSFET BVDSS: 25V~30V U-DFN2020-6 T&R 3K
Produkt ist nicht verfügbar
DMT35M4LFDF-13Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 10K
Produkt ist nicht verfügbar
DMT35M4LFDF-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 1.7W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.7W
Polarisation: unipolar
Gate charge: 14.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 11A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMT35M4LFDF-7Diodes IncorporatedDescription: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 15 V
auf Bestellung 4455 Stücke:
Lieferzeit 21-28 Tag (e)
23+1.17 EUR
27+ 0.99 EUR
100+ 0.69 EUR
500+ 0.54 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 23
DMT35M4LFDF-7Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 3K
auf Bestellung 9812 Stücke:
Lieferzeit 14-28 Tag (e)
40+1.31 EUR
58+ 0.91 EUR
100+ 0.72 EUR
500+ 0.64 EUR
1000+ 0.55 EUR
3000+ 0.4 EUR
Mindestbestellmenge: 40
DMT35M4LFDF-7Diodes IncorporatedDescription: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.39 EUR
Mindestbestellmenge: 3000
DMT35M4LFDF-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 1.7W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.7W
Polarisation: unipolar
Gate charge: 14.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 11A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT35M4LFDF4-13Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V X2-DFN2020-6 T&R 10K
Produkt ist nicht verfügbar
DMT35M4LFDF4-7Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V X2-DFN2020-6 T&R 3K
auf Bestellung 2250 Stücke:
Lieferzeit 14-28 Tag (e)
39+1.37 EUR
45+ 1.16 EUR
100+ 0.87 EUR
500+ 0.68 EUR
1000+ 0.55 EUR
3000+ 0.46 EUR
9000+ 0.42 EUR
Mindestbestellmenge: 39
DMT35M4LFVW-13Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 3K
auf Bestellung 2997 Stücke:
Lieferzeit 14-28 Tag (e)
38+1.38 EUR
45+ 1.17 EUR
100+ 0.88 EUR
500+ 0.69 EUR
1000+ 0.55 EUR
3000+ 0.47 EUR
9000+ 0.42 EUR
Mindestbestellmenge: 38
DMT35M4LFVW-7Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 2K
auf Bestellung 1990 Stücke:
Lieferzeit 14-28 Tag (e)
32+1.67 EUR
45+ 1.17 EUR
100+ 0.93 EUR
500+ 0.87 EUR
1000+ 0.72 EUR
2000+ 0.57 EUR
Mindestbestellmenge: 32
DMT35M4LFVW-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 110A; 1.5W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.5W
Polarisation: unipolar
Gate charge: 16.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 110A
Case: PowerDI®3333-8
Drain-source voltage: 30V
Drain current: 13A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT35M4LFVW-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 110A; 1.5W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.5W
Polarisation: unipolar
Gate charge: 16.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 110A
Case: PowerDI®3333-8
Drain-source voltage: 30V
Drain current: 13A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMT35M7LFV-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 90A; 1.98W
Case: PowerDI3333-8
Kind of package: reel; tape
Pulsed drain current: 90A
Mounting: SMD
Drain-source voltage: 30V
Drain current: 61A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.98W
Polarisation: unipolar
Gate charge: 36nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
DMT35M7LFV-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 90A; 1.98W
Case: PowerDI3333-8
Kind of package: reel; tape
Pulsed drain current: 90A
Mounting: SMD
Drain-source voltage: 30V
Drain current: 61A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.98W
Polarisation: unipolar
Gate charge: 36nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMT35M7LFV-13Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V
auf Bestellung 1590 Stücke:
Lieferzeit 14-28 Tag (e)
DMT35M7LFV-7Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30V
Produkt ist nicht verfügbar
DMT35M8LDG-13Diodes IncorporatedMOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 3K
Produkt ist nicht verfügbar
DMT35M8LDG-13Diodes IncorporatedDescription: MOSFET 2N-CH 30V 17A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 980mW (Ta), 2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 15.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1032pF @ 15V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.7nC @ 10V, 16.3nC @ 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type G)
auf Bestellung 36000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.97 EUR
6000+ 0.93 EUR
9000+ 0.88 EUR
Mindestbestellmenge: 3000
DMT35M8LDG-7Diodes IncorporatedDescription: MOSFET 2N-CH 30V 17A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 980mW (Ta), 2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 15.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1032pF @ 15V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.7nC @ 10V, 16.3nC @ 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type G)
auf Bestellung 14000 Stücke:
Lieferzeit 21-28 Tag (e)
12+2.34 EUR
14+ 1.93 EUR
100+ 1.5 EUR
500+ 1.27 EUR
1000+ 1.03 EUR
Mindestbestellmenge: 12
DMT35M8LDG-7Diodes IncorporatedDescription: MOSFET 2N-CH 30V 17A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 980mW (Ta), 2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 15.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1032pF @ 15V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.7nC @ 10V, 16.3nC @ 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type G)
auf Bestellung 14000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+0.97 EUR
6000+ 0.93 EUR
10000+ 0.88 EUR
Mindestbestellmenge: 2000
DMT36M1LPSDiodes IncorporatedMOSFET
Produkt ist nicht verfügbar
DMT36M1LPS-13DIODES INC.Description: DIODES INC. - DMT36M1LPS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 65 A, 0.0048 ohm, PowerDI 5060, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 65A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 42W
Bauform - Transistor: PowerDI 5060
Anzahl der Pins: 8Pins
Produktpalette: PW Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0048ohm
SVHC: Lead (23-Jan-2024)
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
DMT36M1LPS-13Diodes IncorporatedMOSFET MOSFETBVDSS: 25V-30V
auf Bestellung 5003 Stücke:
Lieferzeit 14-28 Tag (e)
42+1.26 EUR
48+ 1.1 EUR
100+ 0.82 EUR
500+ 0.64 EUR
1000+ 0.5 EUR
2500+ 0.46 EUR
10000+ 0.42 EUR
Mindestbestellmenge: 42
DMT36M1LPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 100A; 2.6W
Mounting: SMD
Case: PowerDI5060-8
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Drain-source voltage: 30V
Drain current: 12A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT36M1LPS-13Diodes IncorporatedDescription: MOSFET N-CH 30V 65A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
auf Bestellung 101764 Stücke:
Lieferzeit 21-28 Tag (e)
21+1.27 EUR
24+ 1.09 EUR
100+ 0.76 EUR
500+ 0.59 EUR
1000+ 0.48 EUR
Mindestbestellmenge: 21
DMT36M1LPS-13Diodes IncTrans MOSFET N-CH 30V 16A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT36M1LPS-13DIODES INC.Description: DIODES INC. - DMT36M1LPS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 65 A, 0.0048 ohm, PowerDI 5060, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 65A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 42W
Bauform - Transistor: PowerDI 5060
Anzahl der Pins: 8Pins
Produktpalette: PW Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0048ohm
SVHC: Lead (23-Jan-2024)
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
DMT36M1LPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 100A; 2.6W
Mounting: SMD
Case: PowerDI5060-8
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Drain-source voltage: 30V
Drain current: 12A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMT36M1LPS-13Diodes IncorporatedDescription: MOSFET N-CH 30V 65A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
auf Bestellung 100000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.43 EUR
5000+ 0.41 EUR
12500+ 0.38 EUR
25000+ 0.37 EUR
62500+ 0.36 EUR
Mindestbestellmenge: 2500
DMT36M1LPS-13Diodes ZetexTrans MOSFET N-CH 30V 16A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT3N4R2U224M3DTA0Murata ElectronicsCap Supercap 0.22F 4.2V 20% (21 X 14 X 2.2mm) SMD Gull Wing Flat 0.3 Ohm 1000h 85C Box
Produkt ist nicht verfügbar
DMT3N4R2U224M3DTA0Murata ElectronicsSupercapacitors / Ultracapacitors EDLC 220mF 4.2V 20% 21x14x2.2mm
auf Bestellung 4406 Stücke:
Lieferzeit 14-28 Tag (e)
DMT3N4R2U224M3DTA0CAP-XX Ltd SupercapacitorsDescription: CAP 220MF 4.2V -40-+85C
Packaging: Bulk
Tolerance: ±20%
Package / Case: 3-SMD
Size / Dimension: 0.827" L x 0.551" W (21.00mm x 14.00mm)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
ESR (Equivalent Series Resistance): 360mOhm @ 1kHz
Height - Seated (Max): 0.098" (2.50mm)
Part Status: Active
Capacitance: 220 mF
Voltage - Rated: 4.2 V
Produkt ist nicht verfügbar
DMT4001LPS-13Diodes IncorporatedMOSFET MOSFET BVDSS: 31V~40V PowerDI5060-8 T&R 2.5K
Produkt ist nicht verfügbar
DMT4001LPS-13Diodes IncorporatedDescription: MOSFET N-CH 40V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 30A, 10V
Power Dissipation (Max): 2.6W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V
Produkt ist nicht verfügbar
DMT4001LPS-13Diodes Inc40V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
Produkt ist nicht verfügbar
DMT4002LPS-13Diodes IncorporatedDescription: MOSFET N-CH 40V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6771 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 265000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.53 EUR
5000+ 1.46 EUR
12500+ 1.39 EUR
Mindestbestellmenge: 2500
DMT4002LPS-13Diodes IncTrans MOSFET N-CH 40V 100A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT4002LPS-13DIODES INC.Description: DIODES INC. - DMT4002LPS-13 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 0.0013 ohm, PowerDI 5060, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 2.3W
Anzahl der Pins: 8Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0013ohm
auf Bestellung 2470 Stücke:
Lieferzeit 14-21 Tag (e)
DMT4002LPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 2.3W
Case: PowerDI5060-8
Kind of package: reel; tape
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
On-state resistance: 3.1mΩ
Drain current: 100A
Drain-source voltage: 40V
Gate charge: 116.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Produkt ist nicht verfügbar
DMT4002LPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 2.3W
Case: PowerDI5060-8
Kind of package: reel; tape
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
On-state resistance: 3.1mΩ
Drain current: 100A
Drain-source voltage: 40V
Gate charge: 116.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT4002LPS-13Diodes IncorporatedDescription: MOSFET N-CH 40V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6771 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 267300 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.69 EUR
10+ 3.02 EUR
100+ 2.35 EUR
500+ 1.99 EUR
1000+ 1.62 EUR
Mindestbestellmenge: 8
DMT4002LPS-13DIODES INC.Description: DIODES INC. - DMT4002LPS-13 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 0.0013 ohm, PowerDI 5060, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 2.3W
Anzahl der Pins: 8Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0013ohm
auf Bestellung 2470 Stücke:
Lieferzeit 14-21 Tag (e)
DMT4002LPS-13Diodes IncorporatedMOSFET MOSFET BVDSS 31V-40V
auf Bestellung 575 Stücke:
Lieferzeit 14-28 Tag (e)
14+3.98 EUR
17+ 3.2 EUR
100+ 2.53 EUR
500+ 2.29 EUR
1000+ 1.67 EUR
2500+ 1.51 EUR
5000+ 1.44 EUR
Mindestbestellmenge: 14
DMT4003SCTDIODES INCORPORATEDCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 350A; 156W; TO220AB
Case: TO220AB
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
On-state resistance: 2.4mΩ
Drain current: 164A
Drain-source voltage: 40V
Gate charge: 75.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 350A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMT4003SCTDiodes IncorporatedDescription: MOSFET N-CH 40V 205A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 205A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
Power Dissipation (Max): 156W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6865 pF @ 20 V
auf Bestellung 50 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.87 EUR
10+ 3.46 EUR
Mindestbestellmenge: 7
DMT4003SCTDIODES INC.Description: DIODES INC. - DMT4003SCT - Leistungs-MOSFET, n-Kanal, 40 V, 205 A, 0.0024 ohm, TO-220AB, Durchsteckmontage
tariffCode: 85411000
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 205A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 156W
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3Pin(s)
Produktpalette: TUK SGACK902S Keystone Coupler
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0024ohm
SVHC: Lead (23-Jan-2024)
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
DMT4003SCTDiodes IncorporatedMOSFET MOSFET BVDSS: 31V-40V
auf Bestellung 94 Stücke:
Lieferzeit 14-28 Tag (e)
15+3.61 EUR
18+ 2.91 EUR
100+ 2.17 EUR
500+ 1.84 EUR
1000+ 1.54 EUR
Mindestbestellmenge: 15
DMT4003SCTDiodes ZetexTrans MOSFET N-CH 40V 205A 3-Pin(3+Tab) TO-220AB Tube
Produkt ist nicht verfügbar
DMT4003SCTDiodes IncTrans MOSFET N-CH 40V 205A 3-Pin(3+Tab) TO-220AB Tube
Produkt ist nicht verfügbar
DMT4003SCTDIODES INCORPORATEDCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 350A; 156W; TO220AB
Case: TO220AB
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
On-state resistance: 2.4mΩ
Drain current: 164A
Drain-source voltage: 40V
Gate charge: 75.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 350A
Produkt ist nicht verfügbar
DMT4004LPS-13Diodes IncorporatedMOSFET MOSFET BVDSS: 31V-40V
auf Bestellung 1653 Stücke:
Lieferzeit 14-28 Tag (e)
20+2.68 EUR
24+ 2.2 EUR
100+ 1.71 EUR
500+ 1.45 EUR
1000+ 1.18 EUR
2500+ 1.15 EUR
Mindestbestellmenge: 20
DMT4004LPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Case: PowerDI5060-8
Kind of package: reel; tape
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
On-state resistance: 4mΩ
Drain current: 21A
Drain-source voltage: 40V
Gate charge: 82.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Produkt ist nicht verfügbar
DMT4004LPS-13Diodes IncorporatedDescription: MOSFET N-CH 40V 26A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 2.6W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 82.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4508 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 74828 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.65 EUR
12+ 2.18 EUR
100+ 1.7 EUR
500+ 1.44 EUR
1000+ 1.17 EUR
Mindestbestellmenge: 10
DMT4004LPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Case: PowerDI5060-8
Kind of package: reel; tape
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
On-state resistance: 4mΩ
Drain current: 21A
Drain-source voltage: 40V
Gate charge: 82.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT4004LPS-13Diodes IncorporatedDescription: MOSFET N-CH 40V 26A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 2.6W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 82.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4508 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 72500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.1 EUR
5000+ 1.05 EUR
12500+ 1 EUR
Mindestbestellmenge: 2500
DMT4005SCTDIODES INCORPORATEDCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 160A; 104W; TO220AB
Case: TO220AB
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
On-state resistance: 3.8mΩ
Drain current: 85A
Drain-source voltage: 40V
Gate charge: 49.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Produkt ist nicht verfügbar
DMT4005SCTDiodes IncorporatedDescription: MOSFET N-CH 40V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.3W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3062 pF @ 20 V
auf Bestellung 3950 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.47 EUR
10+ 4.02 EUR
Mindestbestellmenge: 6
DMT4005SCTDiodes ZetexTrans MOSFET N-CH 40V 100A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
DMT4005SCTDiodes IncTrans MOSFET N-CH 40V 100A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
DMT4005SCTDIODES INCORPORATEDCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 160A; 104W; TO220AB
Case: TO220AB
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
On-state resistance: 3.8mΩ
Drain current: 85A
Drain-source voltage: 40V
Gate charge: 49.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMT4005SCTDiodes IncorporatedMOSFET MOSFET BVDSS: 31V-40V
auf Bestellung 40 Stücke:
Lieferzeit 14-28 Tag (e)
15+3.64 EUR
16+ 3.33 EUR
100+ 2.91 EUR
500+ 2.68 EUR
1000+ 2.25 EUR
2500+ 2.1 EUR
5000+ 2.02 EUR
Mindestbestellmenge: 15
DMT4008LFDF-13Diodes IncorporatedMOSFET MOSFET BVDSS: 31V 40V U-DFN2020-6 T&R 10K
Produkt ist nicht verfügbar
DMT4008LFDF-7DIODES INC.Description: DIODES INC. - DMT4008LFDF-7 - Leistungs-MOSFET, n-Kanal, 40 V, 11.8 A, 0.0078 ohm, U-DFN2020, Oberflächenmontage
tariffCode: 85415000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 11.8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.7V
euEccn: NLR
Verlustleistung: 800mW
Bauform - Transistor: U-DFN2020
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0078ohm
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 2820 Stücke:
Lieferzeit 14-21 Tag (e)
DMT4008LFDF-7DIODES INC.Description: DIODES INC. - DMT4008LFDF-7 - Leistungs-MOSFET, n-Kanal, 40 V, 11.8 A, 0.0078 ohm, U-DFN2020, Oberflächenmontage
tariffCode: 85415000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 11.8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.7V
euEccn: NLR
Verlustleistung: 800mW
Bauform - Transistor: U-DFN2020
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0078ohm
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 2820 Stücke:
Lieferzeit 14-21 Tag (e)
DMT4008LFDF-7Diodes IncorporatedMOSFET MOSFET BVDSS: 31V 40V U-DFN2020-6 T&R 3K
auf Bestellung 2950 Stücke:
Lieferzeit 14-28 Tag (e)
33+1.61 EUR
37+ 1.42 EUR
100+ 1.09 EUR
500+ 0.86 EUR
Mindestbestellmenge: 33
DMT4008LFV-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W
Case: PowerDI3333-8
Kind of package: reel; tape
Pulsed drain current: 70A
Mounting: SMD
Drain-source voltage: 40V
Drain current: 9.7A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.9W
Polarisation: unipolar
Gate charge: 17.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMT4008LFV-13Diodes IncorporatedMOSFET MOSFET BVDSS: 31V-40V
Produkt ist nicht verfügbar
DMT4008LFV-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W
Case: PowerDI3333-8
Kind of package: reel; tape
Pulsed drain current: 70A
Mounting: SMD
Drain-source voltage: 40V
Drain current: 9.7A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.9W
Polarisation: unipolar
Gate charge: 17.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
DMT4008LFV-7Diodes IncorporatedMOSFET MOSFET BVDSS: 31V-40V
Produkt ist nicht verfügbar
DMT4008LSS-13Diodes IncorporatedMOSFET MOSFET BVDSS: 31V-40V
Produkt ist nicht verfügbar
DMT4011LFG-13Diodes IncorporatedMOSFET MOSFET BVDSS: 31V-40V
auf Bestellung 2539 Stücke:
Lieferzeit 14-28 Tag (e)
40+1.33 EUR
48+ 1.1 EUR
100+ 0.82 EUR
500+ 0.65 EUR
1000+ 0.5 EUR
3000+ 0.42 EUR
Mindestbestellmenge: 40
DMT4011LFG-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.6A
On-state resistance: 17.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Kind of package: reel; tape
Gate charge: 15.1nC
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 65A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMT4011LFG-13Diodes IncorporatedDescription: MOSFET N-CH 40V 30A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 15.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 767 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 11970 Stücke:
Lieferzeit 21-28 Tag (e)
21+1.27 EUR
24+ 1.09 EUR
100+ 0.76 EUR
500+ 0.59 EUR
1000+ 0.48 EUR
Mindestbestellmenge: 21
DMT4011LFG-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.6A
On-state resistance: 17.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Kind of package: reel; tape
Gate charge: 15.1nC
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 65A
Mounting: SMD
Case: PowerDI3333-8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMT4011LFG-13Diodes IncorporatedDescription: MOSFET N-CH 40V 30A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 15.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 767 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.43 EUR
6000+ 0.41 EUR
9000+ 0.38 EUR
Mindestbestellmenge: 3000
DMT4011LFG-7DIODES INC.Description: DIODES INC. - DMT4011LFG-7 - Leistungs-MOSFET, n-Kanal, 40 V, 30 A, 0.0092 ohm, PowerDI 3333, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40
rohsCompliant: YES
Dauer-Drainstrom Id: 30
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 15.6
Gate-Source-Schwellenspannung, max.: 3
euEccn: NLR
Verlustleistung: 15.6
Bauform - Transistor: PowerDI 3333
Anzahl der Pins: 8
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0092
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.0092
SVHC: Lead (17-Jan-2023)
auf Bestellung 2620 Stücke:
Lieferzeit 14-21 Tag (e)
DMT4011LFG-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.6A
On-state resistance: 17.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Kind of package: reel; tape
Gate charge: 15.1nC
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 65A
Mounting: SMD
Case: PowerDI3333-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMT4011LFG-7Diodes ZetexTrans MOSFET N-CH 40V 10.8A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT4011LFG-7Diodes IncorporatedDescription: MOSFET N-CH 40V 30A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 15.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 767 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 27825 Stücke:
Lieferzeit 21-28 Tag (e)
21+1.25 EUR
24+ 1.08 EUR
100+ 0.75 EUR
500+ 0.59 EUR
1000+ 0.48 EUR
Mindestbestellmenge: 21
DMT4011LFG-7DIODES INC.Description: DIODES INC. - DMT4011LFG-7 - Leistungs-MOSFET, n-Kanal, 40 V, 30 A, 0.0092 ohm, PowerDI 3333, Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
Verlustleistung: 15.6
Kanaltyp: n-Kanal
euEccn: NLR
hazardous: false
Drain-Source-Durchgangswiderstand: 0.0092
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
SVHC: Lead (17-Jan-2023)
auf Bestellung 2620 Stücke:
Lieferzeit 14-21 Tag (e)
DMT4011LFG-7Diodes IncorporatedMOSFET MOSFET BVDSS: 31V-40V
auf Bestellung 3064 Stücke:
Lieferzeit 14-28 Tag (e)
42+1.24 EUR
50+ 1.06 EUR
100+ 0.79 EUR
500+ 0.62 EUR
1000+ 0.48 EUR
2000+ 0.44 EUR
10000+ 0.41 EUR
Mindestbestellmenge: 42
DMT4011LFG-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.6A
On-state resistance: 17.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Kind of package: reel; tape
Gate charge: 15.1nC
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 65A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMT4011LFG-7Diodes ZetexTrans MOSFET N-CH 40V 10.8A 8-Pin PowerDI EP T/R
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+0.24 EUR
Mindestbestellmenge: 2000
DMT4011LFG-7Diodes IncorporatedDescription: MOSFET N-CH 40V 30A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 15.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 767 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 26000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+0.43 EUR
6000+ 0.41 EUR
10000+ 0.38 EUR
Mindestbestellmenge: 2000
DMT4011LFG-7Diodes IncTrans MOSFET N-CH 40V 10.8A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT4011LSS-13Diodes IncorporatedDescription: MOSFET N-CH 40V 10.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.31W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 829 pF @ 20 V
Produkt ist nicht verfügbar
DMT4011LSS-13Diodes IncorporatedMOSFET MOSFET BVDSS: 31V 40V SO-8 T&R 2.5K
Produkt ist nicht verfügbar
DMT4014LDV-7Diodes IncorporatedDescription: MOSFET 2N-CH 40V 8.5A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 26.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.05 EUR
15+ 1.78 EUR
100+ 1.23 EUR
500+ 1.03 EUR
1000+ 0.88 EUR
Mindestbestellmenge: 13
DMT4014LDV-7Diodes IncorporatedDescription: MOSFET 2N-CH 40V 8.5A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 26.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+0.78 EUR
Mindestbestellmenge: 2000
DMT4014LDV-7Diodes IncorporatedMOSFET MOSFET BVDSS: 31V-40V PowerDI3333-8 T&R 2K
auf Bestellung 1335 Stücke:
Lieferzeit 14-28 Tag (e)
24+2.18 EUR
29+ 1.8 EUR
100+ 1.41 EUR
500+ 1.16 EUR
1000+ 0.99 EUR
2000+ 0.84 EUR
10000+ 0.82 EUR
Mindestbestellmenge: 24
DMT40M9LPS-13Diodes IncorporatedMOSFET MOSFET BVDSS: 31V-40V
Produkt ist nicht verfügbar
DMT43M8LFV-13Diodes IncorporatedMOSFET 40V N-Ch Enhance Mode
Produkt ist nicht verfügbar
DMT43M8LFV-7Diodes IncorporatedMOSFET 40V N-Ch Enhance Mode
Produkt ist nicht verfügbar
DMT47M2LDV-13Diodes IncorporatedMOSFET MOSFET BVDSS: 31V~40V PowerDI3333-8 T&R 3K
Produkt ist nicht verfügbar
DMT47M2LDV-13Diodes IncorporatedDescription: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Produkt ist nicht verfügbar
DMT47M2LDV-7DIODES INCORPORATEDCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 9.5A; Idm: 120A; 14.8W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Pulsed drain current: 120A
Power dissipation: 14.8W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 9.5A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET x2
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
DMT47M2LDV-7Diodes IncorporatedDescription: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+0.9 EUR
Mindestbestellmenge: 2000
DMT47M2LDV-7Diodes IncDUAL 40V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8
Produkt ist nicht verfügbar
DMT47M2LDV-7DIODES INCORPORATEDCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 9.5A; Idm: 120A; 14.8W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Pulsed drain current: 120A
Power dissipation: 14.8W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 9.5A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET x2
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
DMT47M2LDV-7Diodes IncorporatedMOSFET MOSFET BVDSS: 31V~40V PowerDI3333-8 T&R 2K
Produkt ist nicht verfügbar
DMT47M2LDVQ-13Diodes IncorporatedDescription: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+1.12 EUR
6000+ 1.07 EUR
9000+ 1.02 EUR
Mindestbestellmenge: 3000
DMT47M2LDVQ-13Diodes IncorporatedMOSFET MOSFET BVDSS: 31V~40V PowerDI3333-8 T&R 3K
Produkt ist nicht verfügbar
DMT47M2LDVQ-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.5A; Idm: 120A; 2.34W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Pulsed drain current: 120A
Power dissipation: 2.34W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 9.5A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
DMT47M2LDVQ-7Diodes IncorporatedMOSFET MOSFET BVDSS: 31V~40V PowerDI3333-8 T&R 2K
auf Bestellung 2901 Stücke:
Lieferzeit 14-28 Tag (e)
20+2.65 EUR
24+ 2.18 EUR
100+ 1.7 EUR
500+ 1.44 EUR
1000+ 1.17 EUR
2000+ 1.1 EUR
4000+ 1.07 EUR
Mindestbestellmenge: 20
DMT47M2LDVQ-7Diodes IncorporatedDescription: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.7 EUR
12+ 2.22 EUR
100+ 1.73 EUR
500+ 1.46 EUR
1000+ 1.19 EUR
Mindestbestellmenge: 10
DMT47M2LDVQ-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.5A; Idm: 120A; 2.34W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Pulsed drain current: 120A
Power dissipation: 2.34W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 9.5A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
DMT47M2LDVQ-7Diodes IncorporatedDescription: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+1.12 EUR
Mindestbestellmenge: 2000
DMT47M2SFVW-13Diodes IncorporatedMOSFET MOSFET BVDSS: 31V~40V PowerDI3333-8/SWP T&R 3K
Produkt ist nicht verfügbar
DMT47M2SFVW-13Diodes IncorporatedDescription: MOSFET N-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Produkt ist nicht verfügbar
DMT47M2SFVW-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.3A; Idm: 196A; 2.67W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 12.3A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.67W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 196A
Case: PowerDI3333-8
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
DMT47M2SFVW-7Diodes IncorporatedDescription: MOSFET N-CH 40V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
auf Bestellung 112000 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.59 EUR
20+ 1.36 EUR
100+ 0.95 EUR
500+ 0.79 EUR
1000+ 0.67 EUR
Mindestbestellmenge: 17
DMT47M2SFVW-7Diodes IncorporatedMOSFET MOSFET BVDSS: 31V~40V PowerDI3333-8/SWP T&R 2K
auf Bestellung 3520 Stücke:
Lieferzeit 14-28 Tag (e)
34+1.55 EUR
39+ 1.34 EUR
100+ 0.93 EUR
500+ 0.78 EUR
1000+ 0.66 EUR
2000+ 0.59 EUR
4000+ 0.55 EUR
Mindestbestellmenge: 34
DMT47M2SFVW-7Diodes IncorporatedDescription: MOSFET N-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
auf Bestellung 112000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+0.6 EUR
6000+ 0.57 EUR
10000+ 0.53 EUR
Mindestbestellmenge: 2000
DMT47M2SFVW-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.3A; Idm: 196A; 2.67W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 12.3A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.67W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 196A
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMT47M2SFVWQ-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.3A; Idm: 196A; 2.67W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 12.3A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.67W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 196A
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMT47M2SFVWQ-13Diodes IncorporatedDescription: MOSFET N-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMT47M2SFVWQ-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.3A; Idm: 196A; 2.67W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 12.3A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.67W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 196A
Case: PowerDI3333-8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMT47M2SFVWQ-13Diodes IncorporatedMOSFET MOSFET BVDSS: 31V~40V PowerDI3333-8/SWP T&R 3K
Produkt ist nicht verfügbar
DMT47M2SFVWQ-7Diodes IncorporatedDescription: MOSFET N-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMT47M2SFVWQ-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMT47M2SFVWQ-7Diodes IncorporatedMOSFET MOSFET BVDSS: 31V~40V PowerDI3333-8/SWP T&R 2K
auf Bestellung 21502 Stücke:
Lieferzeit 14-28 Tag (e)
26+2.03 EUR
32+ 1.67 EUR
100+ 1.3 EUR
500+ 1.1 EUR
1000+ 0.9 EUR
2000+ 0.84 EUR
4000+ 0.82 EUR
Mindestbestellmenge: 26
DMT47M2SFVWQ-7Diodes IncorporatedDescription: MOSFET N-CH 40V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMT47M2SFVWQ-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMT4D47KCornell Dubilier Electronics (CDE)Description: CAP FILM 4700PF 10% 400VDC RAD
Produkt ist nicht verfügbar
DMT4D68K-FCornell Dubilier - CDEFilm Capacitors .0068UF 400V 10%
auf Bestellung 100 Stücke:
Lieferzeit 14-28 Tag (e)
DMT4P1KCornell Dubilier Electronics (CDE)Description: CAP FILM 0.1UF 10% 400VDC RADIAL
Produkt ist nicht verfügbar
DMT4P1K-FCornell Dubilier Electronics (CDE)Description: CAP FILM 0.1UF 10% 400VDC RADIAL
Tolerance: ±10%
Packaging: Bulk
Package / Case: Radial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Lead Spacing: 0.732" (18.60mm)
Termination: PC Pins
Dielectric Material: Polyester, Metallized
Voltage Rating - AC: 200V
Voltage Rating - DC: 400V
Height - Seated (Max): 0.763" (19.37mm)
Part Status: Active
Capacitance: 0.1 µF
Size / Dimension: 0.882" L x 0.472" W (22.40mm x 12.00mm)
auf Bestellung 1829 Stücke:
Lieferzeit 21-28 Tag (e)
2+13.6 EUR
10+ 11.68 EUR
200+ 8.74 EUR
1000+ 7.06 EUR
Mindestbestellmenge: 2
DMT4P1K-FCornell Dubilier - CDEFilm Capacitors 0.1uF 400V 10%
auf Bestellung 3038 Stücke:
Lieferzeit 14-28 Tag (e)
5+11.21 EUR
10+ 10.11 EUR
50+ 9.13 EUR
100+ 8.29 EUR
Mindestbestellmenge: 5
DMT4P22KCornell Dubilier Electronics (CDE)Description: CAP FILM 0.22UF 10% 400VDC RAD
Produkt ist nicht verfügbar
DMT4P22K-FCornell Dubilier - CDEFilm Capacitors 0.22uF 400V 10%
auf Bestellung 352 Stücke:
Lieferzeit 14-28 Tag (e)
4+15.57 EUR
10+ 13.49 EUR
20+ 12.82 EUR
50+ 12.12 EUR
100+ 10.5 EUR
200+ 9.96 EUR
500+ 9.41 EUR
Mindestbestellmenge: 4
DMT4P22K-FCornell Dubilier Electronics (CDE)Description: CAP FILM 0.22UF 10% 400VDC RAD
Produkt ist nicht verfügbar
DMT4S1K-FCornell Dubilier Electronics (CDE)Description: CAP FILM 10000PF 10% 400VDC RAD
Tolerance: ±10%
Packaging: Bulk
Package / Case: Radial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Lead Spacing: 0.402" (10.20mm)
Termination: PC Pins
Dielectric Material: Polyester, Metallized
Voltage Rating - AC: 200V
Voltage Rating - DC: 400V
Height - Seated (Max): 0.551" (14.00mm)
Part Status: Active
Capacitance: 10000 pF
Size / Dimension: 0.567" L x 0.331" W (14.40mm x 8.40mm)
auf Bestellung 27979 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.42 EUR
10+ 4.94 EUR
500+ 3.03 EUR
1000+ 2.65 EUR
5000+ 2.46 EUR
Mindestbestellmenge: 5
DMT4S1K-FCornell Dubilier - CDEFilm Capacitors 0.01uF 400V 10%
auf Bestellung 1 Stücke:
Lieferzeit 14-28 Tag (e)
DMT5012LFVW-13Diodes IncorporatedMOSFET MOSFET BVDSS: 41V~60V PowerDI3333-8/SWP T&R 3K
Produkt ist nicht verfügbar
DMT5012LFVW-13Diodes IncorporatedDescription: MOSFET BVDSS: 41V~60V POWERDI333
Produkt ist nicht verfügbar
DMT5012LFVW-7Diodes IncorporatedGlenair CIRC MGHTY MSE (80/60) - CIRCULAR MIGHTY MOUSE
Produkt ist nicht verfügbar
DMT5012LFVW-7Diodes IncorporatedDescription: MOSFET BVDSS: 41V~60V POWERDI333
Produkt ist nicht verfügbar
DMT5015LFDF-13Diodes IncorporatedDescription: MOSFET N-CH 50V 9.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Power Dissipation (Max): 820mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 902.7 pF @ 25 V
Produkt ist nicht verfügbar
DMT5015LFDF-13Diodes IncN-Channel Enhancement Mode Mosfet
Produkt ist nicht verfügbar
DMT5015LFDF-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 7.3A; Idm: 60A; 1.2W
Case: U-DFN2020-6
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.2W
Type of transistor: N-MOSFET
On-state resistance: 23mΩ
Drain current: 7.3A
Gate charge: 14nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 60A
Drain-source voltage: 50V
Produkt ist nicht verfügbar
DMT5015LFDF-13Diodes IncorporatedMOSFET 50V N-Ch Enh FET 15mOhm 10Vgs 9.1A
Produkt ist nicht verfügbar
DMT5015LFDF-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 7.3A; Idm: 60A; 1.2W
Case: U-DFN2020-6
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.2W
Type of transistor: N-MOSFET
On-state resistance: 23mΩ
Drain current: 7.3A
Gate charge: 14nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 60A
Drain-source voltage: 50V
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMT5015LFDF-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 7.3A; Idm: 60A; 1.2W
Case: U-DFN2020-6
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.2W
Type of transistor: N-MOSFET
On-state resistance: 23mΩ
Drain current: 7.3A
Gate charge: 14nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 60A
Drain-source voltage: 50V
Produkt ist nicht verfügbar
DMT5015LFDF-7Diodes IncorporatedMOSFET 50V N-Ch Enh FET 15mOhm 10Vgs 9.1A
auf Bestellung 64141 Stücke:
Lieferzeit 14-28 Tag (e)
34+1.57 EUR
39+ 1.35 EUR
100+ 1.01 EUR
500+ 0.8 EUR
1000+ 0.61 EUR
3000+ 0.56 EUR
9000+ 0.48 EUR
Mindestbestellmenge: 34
DMT5015LFDF-7DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 7.3A; Idm: 60A; 1.2W
Case: U-DFN2020-6
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.2W
Type of transistor: N-MOSFET
On-state resistance: 23mΩ
Drain current: 7.3A
Gate charge: 14nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 60A
Drain-source voltage: 50V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMT5015LFDF-7Diodes IncorporatedDescription: MOSFET N-CH 50V 9.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Power Dissipation (Max): 820mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 902.7 pF @ 25 V
Produkt ist nicht verfügbar
DMT5015LFDF-7Diodes IncTrans MOSFET N-CH 50V 9.1A 6-Pin UDFN EP T/R
Produkt ist nicht verfügbar
DMT6002LPS-13Diodes IncorporatedDescription: MOSFET N-CH 60V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 2.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 80000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.93 EUR
5000+ 1.85 EUR
12500+ 1.79 EUR
Mindestbestellmenge: 2500
DMT6002LPS-13Diodes IncTrans MOSFET N-CH 60V 100A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT6002LPS-13DIODES INC.Description: DIODES INC. - DMT6002LPS-13 - Leistungs-MOSFET, n-Kanal, 60 V, 100 A, 0.0015 ohm, PowerDI 5060, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 2.3W
Anzahl der Pins: 8Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0015ohm
auf Bestellung 1322 Stücke:
Lieferzeit 14-21 Tag (e)
DMT6002LPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 2.3W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerDI5060-8
Pulsed drain current: 400A
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Gate charge: 130.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
DMT6002LPS-13Diodes IncorporatedMOSFET MOSFET BVDSS 41V-60V
auf Bestellung 2269 Stücke:
Lieferzeit 14-28 Tag (e)
13+4.32 EUR
15+ 3.59 EUR
100+ 2.86 EUR
250+ 2.63 EUR
500+ 2.38 EUR
1000+ 2.04 EUR
2500+ 1.94 EUR
Mindestbestellmenge: 13
DMT6002LPS-13Diodes IncorporatedDescription: MOSFET N-CH 60V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 2.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 81681 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.26 EUR
10+ 3.55 EUR
100+ 2.83 EUR
500+ 2.39 EUR
1000+ 2.03 EUR
Mindestbestellmenge: 7
DMT6002LPS-13DIODES INC.Description: DIODES INC. - DMT6002LPS-13 - Leistungs-MOSFET, n-Kanal, 60 V, 100 A, 0.0015 ohm, PowerDI 5060, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 2.3W
Anzahl der Pins: 8Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0015ohm
auf Bestellung 1322 Stücke:
Lieferzeit 14-21 Tag (e)
DMT6002LPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 2.3W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerDI5060-8
Pulsed drain current: 400A
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Gate charge: 130.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT6004LPS-13Diodes IncorporatedDescription: MOSFET N-CH 60V 22A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.1W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
auf Bestellung 2010 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.69 EUR
10+ 3.02 EUR
100+ 2.35 EUR
500+ 1.99 EUR
1000+ 1.62 EUR
Mindestbestellmenge: 8
DMT6004LPS-13DIODES INC.Description: DIODES INC. - DMT6004LPS-13 - Leistungs-MOSFET, n-Kanal, 60 V, 100 A, 0.0025 ohm, PowerDI 5060, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Verlustleistung Pd: 2.5W
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 2.5W
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pin(s)
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.0025ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0025ohm
auf Bestellung 4990 Stücke:
Lieferzeit 14-21 Tag (e)
DMT6004LPS-13DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 400A; 2.5W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerDI5060-8
Pulsed drain current: 400A
Drain-source voltage: 60V
Drain current: 16A
On-state resistance: 4.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Gate charge: 78.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
DMT6004LPS-13Diodes IncorporatedMOSFET 60V N-Ch Enh FET 20Vgss 33.3nC 2.0W
auf Bestellung 57114 Stücke:
Lieferzeit 14-28 Tag (e)
14+3.72 EUR
18+ 2.96 EUR
100+ 2.37 EUR
500+ 2.01 EUR
1000+ 1.64 EUR
2500+ 1.54 EUR
5000+ 1.47 EUR
Mindestbestellmenge: 14
DMT6004LPS-13Diodes IncorporatedDescription: MOSFET N-CH 60V 22A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.1W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
Produkt ist nicht verfügbar
DMT6004LPS-13DIODES INC.Description: DIODES INC. - DMT6004LPS-13 - Leistungs-MOSFET, n-Kanal, 60 V, 100 A, 0.0025 ohm, PowerDI 5060, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 2.5W
Anzahl der Pins: 8Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0025ohm
auf Bestellung 4990 Stücke:
Lieferzeit 14-21 Tag (e)