Produkte > IAU

Bezeichnung

Hersteller

Beschreibung

Verfügbarkeit

Preis ohne MwSt

IAUA120N04S5N014AUMA1

Infineon Technologies

Description: MOSFET_(20V 40V) PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 60A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 60µA
Supplier Device Package: PG-HSOF-5-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4828 pF @ 25 V

auf Bestellung 4000 Stücke:

Lieferzeit 21-28 Tag (e)

6+	5.02 EUR
10+	4.16 EUR
100+	3.31 EUR
500+	2.8 EUR
1000+	2.38 EUR

Mindestbestellmenge: 6

IAUA120N04S5N014AUMA1

Description: INFINEON - IAUA120N04S5N014AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 120 A, 0.0012 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 120A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.8V
euEccn: NLR
Verlustleistung: 136W
Bauform - Transistor: HSOF
Anzahl der Pins: 5Pin(s)
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0012ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 1943 Stücke:

Lieferzeit 14-21 Tag (e)

IAUA120N04S5N014AUMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 4682 Stücke:

Lieferzeit 14-28 Tag (e)

15+	3.59 EUR
17+	3.17 EUR
100+	2.78 EUR
250+	2.76 EUR
500+	2.54 EUR
1000+	2.31 EUR
2000+	2.26 EUR

Mindestbestellmenge: 15

IAUA120N04S5N014AUMA1

Infineon Technologies

Description: MOSFET_(20V 40V) PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 60A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 60µA
Supplier Device Package: PG-HSOF-5-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4828 pF @ 25 V

auf Bestellung 4000 Stücke:

Lieferzeit 21-28 Tag (e)

2000+	2.26 EUR

Mindestbestellmenge: 2000

IAUA120N04S5N014AUMA1

Description: INFINEON - IAUA120N04S5N014AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 120 A, 0.0012 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 120A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Verlustleistung Pd: 136W
Gate-Source-Schwellenspannung, max.: 2.8V
euEccn: NLR
Verlustleistung: 136W
Bauform - Transistor: HSOF
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 5Pin(s)
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0012ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0012ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 1943 Stücke:

Lieferzeit 14-21 Tag (e)

IAUA120N04S5N014AUMA1

Infineon Technologies

Trans MOSFET N-CH 40V 120A Automotive 6-Pin(5+Tab) HSOF T/R

Produkt ist nicht verfügbar

IAUA170N10S5N031AUMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 1149 Stücke:

Lieferzeit 14-28 Tag (e)

7+	7.44 EUR
10+	6.24 EUR
25+	6.06 EUR
100+	5.04 EUR
250+	4.91 EUR
500+	4.5 EUR
1000+	3.85 EUR

Mindestbestellmenge: 7

IAUA170N10S5N031AUMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 519A; 197W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 519A
Power dissipation: 197W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUA170N10S5N031AUMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 85A, 10V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6405 pF @ 50 V

auf Bestellung 2514 Stücke:

Lieferzeit 21-28 Tag (e)

4+	7.36 EUR
10+	6.19 EUR
100+	5.01 EUR
500+	4.45 EUR
1000+	3.81 EUR

Mindestbestellmenge: 4

IAUA170N10S5N031AUMA1

Infineon Technologies

SP005423391

Produkt ist nicht verfügbar

IAUA170N10S5N031AUMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 85A, 10V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6405 pF @ 50 V

auf Bestellung 2000 Stücke:

Lieferzeit 21-28 Tag (e)

2000+	3.59 EUR

Mindestbestellmenge: 2000

IAUA170N10S5N031AUMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 519A; 197W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 519A
Power dissipation: 197W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke

Produkt ist nicht verfügbar

IAUA180N04S5N012

Infineon Technologies

MOSFET MOSFET_(20V 40V)

Produkt ist nicht verfügbar

IAUA180N04S5N012AUMA1

Infineon Technologies

Trans MOSFET N-CH 40V 180A Automotive 6-Pin(5+Tab) HSOF T/R

Produkt ist nicht verfügbar

IAUA180N04S5N012AUMA1

Infineon Technologies

Trans MOSFET N-CH 40V 180A 6-Pin(5+Tab) HSOF T/R Automotive AEC-Q101

auf Bestellung 2000 Stücke:

Lieferzeit 14-21 Tag (e)

75+	2.11 EUR

Mindestbestellmenge: 75

IAUA180N04S5N012AUMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 2040 Stücke:

Lieferzeit 14-28 Tag (e)

16+	3.46 EUR
18+	3.02 EUR
100+	2.78 EUR
250+	2.76 EUR
500+	2.59 EUR
1000+	2.49 EUR

Mindestbestellmenge: 16

IAUA180N04S5N012AUMA1

Infineon Technologies

Trans MOSFET N-CH 40V 180A 6-Pin(5+Tab) HSOF T/R Automotive AEC-Q101

auf Bestellung 1405 Stücke:

Lieferzeit 14-21 Tag (e)

81+	1.94 EUR
86+	1.69 EUR
100+	1.53 EUR
250+	1.45 EUR
500+	1.32 EUR
1000+	1.25 EUR

Mindestbestellmenge: 81

IAUA180N04S5N012AUMA1

Description: INFINEON - IAUA180N04S5N012AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 180 A, 0.001 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 180A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Verlustleistung Pd: 125W
Gate-Source-Schwellenspannung, max.: 2.8V
euEccn: NLR
Verlustleistung: 125W
Bauform - Transistor: HSOF
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 5Pin(s)
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.001ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.001ohm

auf Bestellung 5625 Stücke:

Lieferzeit 14-21 Tag (e)

IAUA180N04S5N012AUMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 720A; 125W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 125W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke

Produkt ist nicht verfügbar

IAUA180N04S5N012AUMA1

Infineon Technologies

Description: MOSFET N-CH 40V 180A HSOF-5-1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 90A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 70µA
Supplier Device Package: PG-HSOF-5-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6158 pF @ 25 V

Produkt ist nicht verfügbar

IAUA180N04S5N012AUMA1

Infineon Technologies

Trans MOSFET N-CH 40V 180A 6-Pin(5+Tab) HSOF T/R Automotive AEC-Q101

auf Bestellung 1405 Stücke:

Lieferzeit 14-21 Tag (e)

81+	1.94 EUR
86+	1.69 EUR
100+	1.53 EUR
250+	1.45 EUR
500+	1.32 EUR
1000+	1.25 EUR

Mindestbestellmenge: 81

IAUA180N04S5N012AUMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 720A; 125W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 125W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUA180N04S5N012AUMA1

Description: INFINEON - IAUA180N04S5N012AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 180 A, 0.001 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 180A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.8V
euEccn: NLR
Verlustleistung: 125W
Bauform - Transistor: HSOF
Anzahl der Pins: 5Pin(s)
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.001ohm

auf Bestellung 5625 Stücke:

Lieferzeit 14-21 Tag (e)

IAUA180N04S5N012AUMA1

Infineon Technologies

Description: MOSFET N-CH 40V 180A HSOF-5-1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 90A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 70µA
Supplier Device Package: PG-HSOF-5-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6158 pF @ 25 V

Produkt ist nicht verfügbar

IAUA180N04S5N012AUMA1

Infineon Technologies

Trans MOSFET N-CH 40V 180A 6-Pin(5+Tab) HSOF T/R Automotive AEC-Q101

Produkt ist nicht verfügbar

IAUA180N08S5N026AUMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 25A; Idm: 546A; 179W; PG-HSOF-5
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 25A
Pulsed drain current: 546A
Power dissipation: 179W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke

Produkt ist nicht verfügbar

IAUA180N08S5N026AUMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tj)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 90A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 100µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5980 pF @ 40 V

Produkt ist nicht verfügbar

IAUA180N08S5N026AUMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 25A; Idm: 546A; 179W; PG-HSOF-5
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 25A
Pulsed drain current: 546A
Power dissipation: 179W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUA180N08S5N026AUMA1

Infineon Technologies

SP005423387

Produkt ist nicht verfügbar

IAUA180N08S5N026AUMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tj)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 90A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 100µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5980 pF @ 40 V

auf Bestellung 1570 Stücke:

Lieferzeit 21-28 Tag (e)

4+	6.92 EUR
10+	5.81 EUR
100+	4.7 EUR
500+	4.18 EUR
1000+	3.58 EUR

Mindestbestellmenge: 4

IAUA180N08S5N026AUMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 3501 Stücke:

Lieferzeit 14-28 Tag (e)

8+	6.94 EUR
10+	5.82 EUR
25+	5.51 EUR
100+	4.71 EUR
250+	4.45 EUR
500+	4.19 EUR
1000+	3.59 EUR

Mindestbestellmenge: 8

IAUA180N10S5N029AUMA1

Infineon Technologies

SP005423385

Produkt ist nicht verfügbar

IAUA180N10S5N029AUMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tj)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 90A, 10V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7673 pF @ 50 V

Produkt ist nicht verfügbar

IAUA180N10S5N029AUMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 1697 Stücke:

Lieferzeit 14-28 Tag (e)

7+	8.66 EUR
10+	7.28 EUR
25+	7.07 EUR
100+	5.9 EUR
250+	5.69 EUR
500+	5.25 EUR
1000+	4.5 EUR

Mindestbestellmenge: 7

IAUA180N10S5N029AUMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 561A
Power dissipation: 221W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke

Produkt ist nicht verfügbar

IAUA180N10S5N029AUMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 561A
Power dissipation: 221W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUA180N10S5N029AUMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tj)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 90A, 10V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7673 pF @ 50 V

auf Bestellung 1926 Stücke:

Lieferzeit 21-28 Tag (e)

4+	8.61 EUR
10+	7.22 EUR
100+	5.84 EUR
500+	5.19 EUR
1000+	4.45 EUR

Mindestbestellmenge: 4

IAUA200N04S5N010

Infineon Technologies

MOSFET MOSFET_(20V 40V)

Produkt ist nicht verfügbar

IAUA200N04S5N010ATMA1

Infineon Technologies

Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 100µA
Supplier Device Package: PG-HSOF-5-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V

Produkt ist nicht verfügbar

IAUA200N04S5N010ATMA1

Infineon Technologies

MOSFET

Produkt ist nicht verfügbar

IAUA200N04S5N010ATMA1

Infineon Technologies

SP005423841

Produkt ist nicht verfügbar

IAUA200N04S5N010AUMA1

Infineon Technologies

Description: MOSFET N-CH 40V 200A 5HSOF
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 100µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 2000 Stücke:

Lieferzeit 21-28 Tag (e)

2000+	2.83 EUR

Mindestbestellmenge: 2000

IAUA200N04S5N010AUMA1

Infineon Technologies

Trans MOSFET N-CH 40V 200A Automotive AEC-Q101 6-Pin(5+Tab) HSOF T/R

auf Bestellung 4000 Stücke:

Lieferzeit 14-21 Tag (e)

2000+	1.78 EUR
4000+	1.68 EUR

Mindestbestellmenge: 2000

IAUA200N04S5N010AUMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 2730 Stücke:

Lieferzeit 14-28 Tag (e)

12+	4.6 EUR
13+	4.03 EUR
100+	3.46 EUR
250+	3.43 EUR
500+	3.12 EUR
1000+	2.89 EUR
2000+	2.76 EUR

Mindestbestellmenge: 12

IAUA200N04S5N010AUMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 800A; 167W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 200A
Pulsed drain current: 800A
Power dissipation: 167W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 132nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke

Produkt ist nicht verfügbar

IAUA200N04S5N010AUMA1

Infineon Technologies

Trans MOSFET N-CH 40V 200A Automotive AEC-Q101 6-Pin(5+Tab) HSOF T/R

auf Bestellung 1538 Stücke:

Lieferzeit 14-21 Tag (e)

68+	2.31 EUR
73+	2.07 EUR
74+	1.98 EUR
100+	1.71 EUR
250+	1.63 EUR
500+	1.52 EUR
1000+	1.41 EUR

Mindestbestellmenge: 68

IAUA200N04S5N010AUMA1

Infineon Technologies

Trans MOSFET N-CH 40V 200A Automotive 6-Pin(5+Tab) HSOF T/R

Produkt ist nicht verfügbar

IAUA200N04S5N010AUMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 800A; 167W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 200A
Pulsed drain current: 800A
Power dissipation: 167W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 132nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry

Produkt ist nicht verfügbar

IAUA200N04S5N010AUMA1

Infineon Technologies

Trans MOSFET N-CH 40V 200A Automotive AEC-Q101 6-Pin(5+Tab) HSOF T/R

auf Bestellung 1538 Stücke:

Lieferzeit 14-21 Tag (e)

68+	2.31 EUR
73+	2.07 EUR
74+	1.98 EUR
100+	1.71 EUR
250+	1.63 EUR
500+	1.52 EUR
1000+	1.41 EUR

Mindestbestellmenge: 68

IAUA200N04S5N010AUMA1

Infineon Technologies

Description: MOSFET N-CH 40V 200A 5HSOF
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 100µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 4044 Stücke:

Lieferzeit 21-28 Tag (e)

5+	6.27 EUR
10+	5.21 EUR
100+	4.14 EUR
500+	3.5 EUR
1000+	2.97 EUR

Mindestbestellmenge: 5

IAUA200N04S5N010AUMA1

Infineon Technologies

Trans MOSFET N-CH 40V 200A Automotive AEC-Q101 6-Pin(5+Tab) HSOF T/R

auf Bestellung 4000 Stücke:

Lieferzeit 14-21 Tag (e)

2000+	1.78 EUR
4000+	1.68 EUR

Mindestbestellmenge: 2000

IAUA200N04S5N010AUMA1

Infineon Technologies

Trans MOSFET N-CH 40V 200A Automotive AEC-Q101 6-Pin(5+Tab) HSOF T/R

auf Bestellung 1092 Stücke:

Lieferzeit 14-21 Tag (e)

68+	2.32 EUR
76+	2 EUR
100+	1.85 EUR
200+	1.76 EUR
500+	1.59 EUR
1000+	1.46 EUR

Mindestbestellmenge: 68

IAUA210N10S5N024AUMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 674A; 238W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 26A
Pulsed drain current: 674A
Power dissipation: 238W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 119nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUA210N10S5N024AUMA1

Description: INFINEON - IAUA210N10S5N024AUMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 210 A, 0.002 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 210A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.8V
euEccn: NLR
Verlustleistung: 238W
Bauform - Transistor: HSOF
Anzahl der Pins: 5Pin(s)
Produktpalette: OptiMOS-5 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.002ohm
SVHC: No SVHC (14-Jun-2023)

auf Bestellung 1880 Stücke:

Lieferzeit 14-21 Tag (e)

IAUA210N10S5N024AUMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tj)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 150µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8696 pF @ 50 V

auf Bestellung 2000 Stücke:

Lieferzeit 21-28 Tag (e)

2000+	4.47 EUR

Mindestbestellmenge: 2000

IAUA210N10S5N024AUMA1

Description: INFINEON - IAUA210N10S5N024AUMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 210 A, 0.002 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 210A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.8V
euEccn: NLR
Verlustleistung: 238W
Bauform - Transistor: HSOF
Anzahl der Pins: 5Pin(s)
Produktpalette: OptiMOS-5 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.002ohm
SVHC: No SVHC (14-Jun-2023)

auf Bestellung 1880 Stücke:

Lieferzeit 14-21 Tag (e)

IAUA210N10S5N024AUMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 2401 Stücke:

Lieferzeit 14-28 Tag (e)

6+	9.44 EUR
10+	7.93 EUR
100+	6.4 EUR
500+	5.69 EUR
1000+	4.78 EUR
2000+	4.5 EUR

Mindestbestellmenge: 6

IAUA210N10S5N024AUMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tj)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 150µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8696 pF @ 50 V

auf Bestellung 3820 Stücke:

Lieferzeit 21-28 Tag (e)

3+	9.18 EUR
10+	7.71 EUR
100+	6.24 EUR
500+	5.54 EUR
1000+	4.75 EUR

Mindestbestellmenge: 3

IAUA210N10S5N024AUMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 674A; 238W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 26A
Pulsed drain current: 674A
Power dissipation: 238W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 119nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke

Produkt ist nicht verfügbar

IAUA210N10S5N024AUMA1

Infineon Technologies

SP005412964

Produkt ist nicht verfügbar

IAUA220N08S5N021AUMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tj)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 120µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7219 pF @ 40 V

auf Bestellung 2970 Stücke:

Lieferzeit 21-28 Tag (e)

4+	8.45 EUR
10+	7.1 EUR
100+	5.74 EUR
500+	5.1 EUR
1000+	4.37 EUR

Mindestbestellmenge: 4

IAUA220N08S5N021AUMA1

Description: INFINEON - IAUA220N08S5N021AUMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 220 A, 0.0018 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 220A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.8V
euEccn: NLR
Verlustleistung: 211W
Bauform - Transistor: HSOF
Anzahl der Pins: 5Pin(s)
Produktpalette: OptiMOS -5 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0018ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 1272 Stücke:

Lieferzeit 14-21 Tag (e)

IAUA220N08S5N021AUMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 1990 Stücke:

Lieferzeit 14-28 Tag (e)

7+	8.11 EUR
10+	6.81 EUR
25+	6.42 EUR
100+	5.51 EUR
250+	5.2 EUR
500+	4.91 EUR
1000+	4.21 EUR

Mindestbestellmenge: 7

IAUA220N08S5N021AUMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 27A; Idm: 677A; 211W; PG-HSOF-5
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 27A
Pulsed drain current: 677A
Power dissipation: 211W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke

Produkt ist nicht verfügbar

IAUA220N08S5N021AUMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tj)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 120µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7219 pF @ 40 V

auf Bestellung 2000 Stücke:

Lieferzeit 21-28 Tag (e)

2000+	4.11 EUR

Mindestbestellmenge: 2000

IAUA220N08S5N021AUMA1

Infineon Technologies

Automotive Power Mosfet

Produkt ist nicht verfügbar

IAUA220N08S5N021AUMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 27A; Idm: 677A; 211W; PG-HSOF-5
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 27A
Pulsed drain current: 677A
Power dissipation: 211W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUA220N08S5N021AUMA1

Description: INFINEON - IAUA220N08S5N021AUMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 220 A, 0.0018 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 220A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.8V
euEccn: NLR
Verlustleistung: 211W
Bauform - Transistor: HSOF
Anzahl der Pins: 5Pin(s)
Produktpalette: OptiMOS -5 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0018ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 1272 Stücke:

Lieferzeit 14-21 Tag (e)

IAUA250N04S6N005AUMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 62A; Idm: 1500A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Pulsed drain current: 1.5kA
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke

Produkt ist nicht verfügbar

IAUA250N04S6N005AUMA1

Description: INFINEON - IAUA250N04S6N005AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 490 A, 0.00055 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 490A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.6V
euEccn: NLR
Verlustleistung: 250W
Bauform - Transistor: HSOF
Anzahl der Pins: 5Pin(s)
Produktpalette: OptiMOS 6 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 550µohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 2240 Stücke:

Lieferzeit 14-21 Tag (e)

IAUA250N04S6N005AUMA1

Infineon Technologies

SP005596859

Produkt ist nicht verfügbar

IAUA250N04S6N005AUMA1

Infineon Technologies

Description: OPTIMOS POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Ta)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 145µA
Supplier Device Package: PG-HSOF-5-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11144 pF @ 25 V

auf Bestellung 4782 Stücke:

Lieferzeit 21-28 Tag (e)

3+	9.02 EUR
10+	7.57 EUR
100+	6.13 EUR
500+	5.45 EUR
1000+	4.66 EUR

Mindestbestellmenge: 3

IAUA250N04S6N005AUMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 62A; Idm: 1500A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Pulsed drain current: 1.5kA
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUA250N04S6N005AUMA1

Description: INFINEON - IAUA250N04S6N005AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 490 A, 0.00055 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 490A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.6V
euEccn: NLR
Verlustleistung: 250W
Bauform - Transistor: HSOF
Anzahl der Pins: 5Pin(s)
Produktpalette: OptiMOS 6 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 550µohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 2240 Stücke:

Lieferzeit 14-21 Tag (e)

IAUA250N04S6N005AUMA1

Infineon Technologies

Description: OPTIMOS POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Ta)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 145µA
Supplier Device Package: PG-HSOF-5-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11144 pF @ 25 V

auf Bestellung 4000 Stücke:

Lieferzeit 21-28 Tag (e)

2000+	4.39 EUR

Mindestbestellmenge: 2000

IAUA250N04S6N005AUMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 5998 Stücke:

Lieferzeit 14-28 Tag (e)

6+	9.1 EUR
10+	7.64 EUR
25+	7.2 EUR
100+	6.19 EUR
250+	5.85 EUR
500+	5.69 EUR
2000+	4.81 EUR

Mindestbestellmenge: 6

IAUA250N04S6N006AUMA1

Description: INFINEON - IAUA250N04S6N006AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 450 A, 0.00047 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 450A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Verlustleistung Pd: 250W
Gate-Source-Schwellenspannung, max.: 2.6V
euEccn: NLR
Verlustleistung: 250W
Bauform - Transistor: HSOF
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 5Pin(s)
Produktpalette: OptiMOS 6
productTraceability: No
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 470µohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 470µohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 5336 Stücke:

Lieferzeit 14-21 Tag (e)

IAUA250N04S6N006AUMA1

Infineon Technologies

Description: MOSFET_(20V 40V) PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450A (Tj)
Rds On (Max) @ Id, Vgs: 0.64mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 145µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11064 pF @ 25 V

auf Bestellung 8077 Stücke:

Lieferzeit 21-28 Tag (e)

3+	10.27 EUR
10+	8.62 EUR
100+	6.98 EUR
500+	6.2 EUR
1000+	5.31 EUR

Mindestbestellmenge: 3

IAUA250N04S6N006AUMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 2247 Stücke:

Lieferzeit 14-28 Tag (e)

5+	11.39 EUR
10+	9.02 EUR
100+	7.75 EUR
500+	7.15 EUR
1000+	6.55 EUR
2000+	5.56 EUR
4000+	5.54 EUR

Mindestbestellmenge: 5

IAUA250N04S6N006AUMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 57A; Idm: 1500A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 57A
Pulsed drain current: 1.5kA
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 169nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke

Produkt ist nicht verfügbar

IAUA250N04S6N006AUMA1

Description: INFINEON - IAUA250N04S6N006AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 450 A, 0.00047 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 450A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.6V
euEccn: NLR
Verlustleistung: 250W
Bauform - Transistor: HSOF
Anzahl der Pins: 5Pin(s)
Produktpalette: OptiMOS 6
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 470µohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 5336 Stücke:

Lieferzeit 14-21 Tag (e)

IAUA250N04S6N006AUMA1

Infineon Technologies

40V, N-Ch, 0.6 m ohm Max, Automotive MOSFET

Produkt ist nicht verfügbar

IAUA250N04S6N006AUMA1

Infineon Technologies

Description: MOSFET_(20V 40V) PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450A (Tj)
Rds On (Max) @ Id, Vgs: 0.64mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 145µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11064 pF @ 25 V

auf Bestellung 8000 Stücke:

Lieferzeit 21-28 Tag (e)

2000+	5 EUR

Mindestbestellmenge: 2000

IAUA250N04S6N006AUMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 57A; Idm: 1500A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 57A
Pulsed drain current: 1.5kA
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 169nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUA250N04S6N007AUMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 4091 Stücke:

Lieferzeit 14-28 Tag (e)

11+	4.99 EUR
12+	4.65 EUR
25+	4.55 EUR
2000+	3.98 EUR

Mindestbestellmenge: 11

IAUA250N04S6N007AUMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1350A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 1350A
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke

Produkt ist nicht verfügbar

IAUA250N04S6N007AUMA1

Infineon Technologies

SP003127494

Produkt ist nicht verfügbar

IAUA250N04S6N007AUMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1350A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 1350A
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUA250N04S6N007AUMA1

Description: INFINEON - IAUA250N04S6N007AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 435 A, 0.0005 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 435A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Verlustleistung Pd: 250W
Gate-Source-Schwellenspannung, max.: 2.6V
euEccn: NLR
Verlustleistung: 250W
Bauform - Transistor: HSOF
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 5Pin(s)
Produktpalette: OptiMOS 6
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 500µohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 500µohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 1263 Stücke:

Lieferzeit 14-21 Tag (e)

IAUA250N04S6N007AUMA1

Infineon Technologies

Description: MOSFET_(20V 40V) PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V

auf Bestellung 1905 Stücke:

Lieferzeit 21-28 Tag (e)

4+	8.19 EUR
10+	6.87 EUR
100+	5.55 EUR
500+	4.94 EUR
1000+	4.23 EUR

Mindestbestellmenge: 4

IAUA250N04S6N007AUMA1

Description: INFINEON - IAUA250N04S6N007AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 435 A, 0.0005 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 435A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Verlustleistung Pd: 250W
Gate-Source-Schwellenspannung, max.: 2.6V
euEccn: NLR
Verlustleistung: 250W
Bauform - Transistor: HSOF
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 5Pin(s)
Produktpalette: OptiMOS 6
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 500µohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 500µohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 1263 Stücke:

Lieferzeit 14-21 Tag (e)

IAUA250N04S6N007AUMA1

Infineon Technologies

Description: MOSFET_(20V 40V) PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V

Produkt ist nicht verfügbar

IAUA250N04S6N007EAUMA1

Description: INFINEON - IAUA250N04S6N007EAUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 380 A, 0.0007 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 380A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.6V
euEccn: NLR
Verlustleistung: 192W
Bauform - Transistor: HSOF
Anzahl der Pins: 5Pin(s)
Produktpalette: OptiMOS 6 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 700µohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 10000 Stücke:

Lieferzeit 14-21 Tag (e)

IAUA250N04S6N007EAUMA1

Infineon Technologies

Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V

auf Bestellung 2000 Stücke:

Lieferzeit 21-28 Tag (e)

2000+	3.19 EUR

Mindestbestellmenge: 2000

IAUA250N04S6N007EAUMA1

Description: INFINEON - IAUA250N04S6N007EAUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 380 A, 0.0007 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 380A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.6V
euEccn: NLR
Verlustleistung: 192W
Bauform - Transistor: HSOF
Anzahl der Pins: 5Pin(s)
Produktpalette: OptiMOS 6 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 700µohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 10000 Stücke:

Lieferzeit 14-21 Tag (e)

IAUA250N04S6N007EAUMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 11870 Stücke:

Lieferzeit 14-28 Tag (e)

8+	6.6 EUR
10+	5.56 EUR
25+	5.25 EUR
100+	4.5 EUR
250+	4.26 EUR
500+	3.98 EUR
1000+	3.64 EUR

Mindestbestellmenge: 8

IAUA250N04S6N007EAUMA1

Infineon Technologies

Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V

auf Bestellung 3039 Stücke:

Lieferzeit 21-28 Tag (e)

4+	6.55 EUR
10+	5.5 EUR
100+	4.45 EUR
500+	3.96 EUR
1000+	3.39 EUR

Mindestbestellmenge: 4

IAUA250N04S6N007EAUMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1300A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 1.3kA
Power dissipation: 192W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.83Ω
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke

Produkt ist nicht verfügbar

IAUA250N04S6N007EAUMA1

Infineon Technologies

SP005596862

Produkt ist nicht verfügbar

IAUA250N04S6N007EAUMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1300A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 1.3kA
Power dissipation: 192W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.83Ω
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUA250N04S6N008AUMA1

Description: INFINEON - IAUA250N04S6N008AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 340 A, 0.0008 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 340A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.6V
euEccn: NLR
Verlustleistung: 172W
Bauform - Transistor: HSOF
Anzahl der Pins: 5Pin(s)
Produktpalette: OptiMOS 6 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 800µohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 1930 Stücke:

Lieferzeit 14-21 Tag (e)

IAUA250N04S6N008AUMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 1999 Stücke:

Lieferzeit 140-154 Tag (e)

8+	6.63 EUR
10+	5.51 EUR
100+	4.37 EUR
250+	4.03 EUR
500+	3.67 EUR
1000+	3.15 EUR
2000+	2.99 EUR

Mindestbestellmenge: 8

IAUA250N04S6N008AUMA1

Infineon Technologies

Description: OPTIMOS POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Ta)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 100A, 10V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3V @ 90µA
Supplier Device Package: PG-HSOF-5-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7088 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IAUA250N04S6N008AUMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 51A; Idm: 1100A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 51A
Pulsed drain current: 1100A
Power dissipation: 172W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 960µΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke

Produkt ist nicht verfügbar

IAUA250N04S6N008AUMA1

Infineon Technologies

SP005596860

Produkt ist nicht verfügbar

IAUA250N04S6N008AUMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 51A; Idm: 1100A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 51A
Pulsed drain current: 1100A
Power dissipation: 172W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 960µΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUA250N04S6N008AUMA1

Description: INFINEON - IAUA250N04S6N008AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 340 A, 0.0008 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 340A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.6V
euEccn: NLR
Verlustleistung: 172W
Bauform - Transistor: HSOF
Anzahl der Pins: 5Pin(s)
Produktpalette: OptiMOS 6 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 800µohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 1930 Stücke:

Lieferzeit 14-21 Tag (e)

IAUA250N04S6N008AUMA1

Infineon Technologies

Description: OPTIMOS POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Ta)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 100A, 10V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3V @ 90µA
Supplier Device Package: PG-HSOF-5-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7088 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 911 Stücke:

Lieferzeit 21-28 Tag (e)

4+	6.6 EUR
10+	5.49 EUR
100+	4.37 EUR
500+	3.7 EUR

Mindestbestellmenge: 4

IAUA250N08S5N018AUMA1

Description: INFINEON - IAUA250N08S5N018AUMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 250 A, 0.0015 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 250A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.8V
euEccn: NLR
Verlustleistung: 238W
Bauform - Transistor: HSOF
Anzahl der Pins: 5Pin(s)
Produktpalette: OptiMOS-5 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0015ohm
SVHC: No SVHC (14-Jun-2023)

auf Bestellung 2000 Stücke:

Lieferzeit 14-21 Tag (e)

IAUA250N08S5N018AUMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 150µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8715 pF @ 40 V

auf Bestellung 1970 Stücke:

Lieferzeit 21-28 Tag (e)

4+	8.58 EUR
10+	7.21 EUR
100+	5.83 EUR
500+	5.18 EUR
1000+	4.44 EUR

Mindestbestellmenge: 4

IAUA250N08S5N018AUMA1

Infineon Technologies

SP005412937

Produkt ist nicht verfügbar

IAUA250N08S5N018AUMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 35A; Idm: 813A; 238W; PG-HSOF-5
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 238W
Pulsed drain current: 813A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 35A
On-state resistance: 2.5mΩ
Gate charge: 125nC
Case: PG-HSOF-5
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Technology: OptiMOS™ 5

Produkt ist nicht verfügbar

IAUA250N08S5N018AUMA1

Description: INFINEON - IAUA250N08S5N018AUMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 250 A, 0.0015 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 250A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.8V
euEccn: NLR
Verlustleistung: 238W
Bauform - Transistor: HSOF
Anzahl der Pins: 5Pin(s)
Produktpalette: OptiMOS-5 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0015ohm
SVHC: No SVHC (14-Jun-2023)

auf Bestellung 2000 Stücke:

Lieferzeit 14-21 Tag (e)

IAUA250N08S5N018AUMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 150µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8715 pF @ 40 V

Produkt ist nicht verfügbar

IAUA250N08S5N018AUMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 139 Stücke:

Lieferzeit 14-28 Tag (e)

6+	8.71 EUR
10+	7.31 EUR
25+	6.89 EUR
100+	5.93 EUR
250+	5.59 EUR
500+	5.25 EUR
1000+	4.5 EUR

Mindestbestellmenge: 6

IAUA250N08S5N018AUMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 35A; Idm: 813A; 238W; PG-HSOF-5
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 238W
Pulsed drain current: 813A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 35A
On-state resistance: 2.5mΩ
Gate charge: 125nC
Case: PG-HSOF-5
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Technology: OptiMOS™ 5
Anzahl je Verpackung: 2000 Stücke

Produkt ist nicht verfügbar

IAUAN04S7N009

Infineon Technologies

IAUAN04S7N009

Produkt ist nicht verfügbar

IAUC100N04S6L014ATMA1

Infineon Technologies

Description: IAUC100N04S6L014ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 24283 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.59 EUR
10+	2.94 EUR
100+	2.28 EUR
500+	1.94 EUR
1000+	1.58 EUR
2000+	1.48 EUR

Mindestbestellmenge: 8

IAUC100N04S6L014ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 100A Automotive 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC100N04S6L014ATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 8925 Stücke:

Lieferzeit 14-28 Tag (e)

15+	3.61 EUR
19+	2.78 EUR
100+	2.26 EUR
500+	1.95 EUR
1000+	1.5 EUR
5000+	1.41 EUR

Mindestbestellmenge: 15

IAUC100N04S6L014ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC100N04S6L014ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 100A Automotive 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC100N04S6L014ATMA1

Infineon Technologies

Description: IAUC100N04S6L014ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 20000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	1.41 EUR
10000+	1.35 EUR

Mindestbestellmenge: 5000

IAUC100N04S6L014ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUC100N04S6L020

Infineon Technologies

MOSFET MOSFET_(20V 40V)

Produkt ist nicht verfügbar

IAUC100N04S6L020ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC100N04S6L020ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 100A Automotive 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC100N04S6L020ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUC100N04S6L020ATMA1

Infineon Technologies

Description: IAUC100N04S6L020ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.04mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 32µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2744 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 15612 Stücke:

Lieferzeit 21-28 Tag (e)

9+	3.09 EUR
11+	2.54 EUR
100+	1.97 EUR
500+	1.67 EUR
1000+	1.36 EUR
2000+	1.28 EUR

Mindestbestellmenge: 9

IAUC100N04S6L020ATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 20373 Stücke:

Lieferzeit 14-28 Tag (e)

18+	3.04 EUR
21+	2.56 EUR
100+	1.99 EUR
500+	1.68 EUR
1000+	1.29 EUR
5000+	1.23 EUR

Mindestbestellmenge: 18

IAUC100N04S6L020ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 100A Automotive 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC100N04S6L020ATMA1

Infineon Technologies

Description: IAUC100N04S6L020ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.04mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 32µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2744 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 15000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	1.22 EUR
10000+	1.17 EUR

Mindestbestellmenge: 5000

IAUC100N04S6L020ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 100A Automotive 8-Pin TDSON EP T/R

auf Bestellung 10000 Stücke:

Lieferzeit 14-21 Tag (e)

IAUC100N04S6L025

Infineon Technologies

MOSFET MOSFET_(20V 40V)

Produkt ist nicht verfügbar

IAUC100N04S6L025ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 100A Automotive AEC-Q101 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC100N04S6L025ATMA1

Infineon Technologies

Description: IAUC100N04S6L025ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 24µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2019 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 40000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	1.03 EUR
10000+	0.98 EUR

Mindestbestellmenge: 5000

IAUC100N04S6L025ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 100A Automotive AEC-Q101 8-Pin TDSON EP T/R

auf Bestellung 20000 Stücke:

Lieferzeit 14-21 Tag (e)

5000+	0.82 EUR

Mindestbestellmenge: 5000

IAUC100N04S6L025ATMA1

Description: INFINEON - IAUC100N04S6L025ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 0.00206 ohm, TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 62W
Gate-Source-Schwellenspannung, max.: 1.6V
euEccn: NLR
Verlustleistung: 62W
Bauform - Transistor: TDSON
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 6
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.00206ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.00206ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 13507 Stücke:

Lieferzeit 14-21 Tag (e)

IAUC100N04S6L025ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 100A Automotive AEC-Q101 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC100N04S6L025ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 100A Automotive 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC100N04S6L025ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 100A Automotive AEC-Q101 8-Pin TDSON EP T/R

auf Bestellung 5000 Stücke:

Lieferzeit 14-21 Tag (e)

99+	1.59 EUR
108+	1.4 EUR
133+	1.1 EUR
200+	0.99 EUR
1000+	0.84 EUR
5000+	0.73 EUR

Mindestbestellmenge: 99

IAUC100N04S6L025ATMA1

Description: INFINEON - IAUC100N04S6L025ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 0.00206 ohm, TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.6V
euEccn: NLR
Verlustleistung: 62W
Bauform - Transistor: TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 6
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.00206ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 13507 Stücke:

Lieferzeit 14-21 Tag (e)

IAUC100N04S6L025ATMA1

Infineon Technologies

Description: IAUC100N04S6L025ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 24µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2019 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 48181 Stücke:

Lieferzeit 21-28 Tag (e)

10+	2.63 EUR
13+	2.14 EUR
100+	1.67 EUR
500+	1.41 EUR
1000+	1.15 EUR
2000+	1.08 EUR

Mindestbestellmenge: 10

IAUC100N04S6L025ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 83A; Idm: 400A; 62W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 83A
Pulsed drain current: 400A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC100N04S6L025ATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 7204 Stücke:

Lieferzeit 14-28 Tag (e)

20+	2.63 EUR
25+	2.16 EUR
100+	1.67 EUR
500+	1.42 EUR
1000+	1.09 EUR
5000+	1.04 EUR

Mindestbestellmenge: 20

IAUC100N04S6L025ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 83A; Idm: 400A; 62W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 83A
Pulsed drain current: 400A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUC100N04S6N015ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 100A Automotive 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC100N04S6N015ATMA1

Infineon Technologies

Description: IAUC100N04S6N015ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	1.41 EUR

Mindestbestellmenge: 5000

IAUC100N04S6N015ATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 224 Stücke:

Lieferzeit 14-28 Tag (e)

15+	3.64 EUR
18+	2.96 EUR
100+	2.3 EUR
500+	1.95 EUR
1000+	1.5 EUR
5000+	1.42 EUR

Mindestbestellmenge: 15

IAUC100N04S6N015ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 100A Automotive 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC100N04S6N015ATMA1

Infineon Technologies

Description: IAUC100N04S6N015ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 5376 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.59 EUR
10+	2.94 EUR
100+	2.28 EUR
500+	1.94 EUR
1000+	1.58 EUR
2000+	1.48 EUR

Mindestbestellmenge: 8

IAUC100N04S6N022ATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 3248 Stücke:

Lieferzeit 14-28 Tag (e)

17+	3.12 EUR
21+	2.56 EUR
100+	1.99 EUR
500+	1.68 EUR
1000+	1.29 EUR
5000+	1.23 EUR

Mindestbestellmenge: 17

IAUC100N04S6N022ATMA1

Infineon Technologies

Description: IAUC100N04S6N022ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.26mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 32µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2421 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 12908 Stücke:

Lieferzeit 21-28 Tag (e)

9+	3.09 EUR
11+	2.54 EUR
100+	1.97 EUR
500+	1.67 EUR
1000+	1.36 EUR
2000+	1.28 EUR

Mindestbestellmenge: 9

IAUC100N04S6N022ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 96A; Idm: 400A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 96A
Pulsed drain current: 400A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC100N04S6N022ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 100A Automotive 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC100N04S6N022ATMA1

Infineon Technologies

Description: IAUC100N04S6N022ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.26mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 32µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2421 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 10000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	1.22 EUR
10000+	1.17 EUR

Mindestbestellmenge: 5000

IAUC100N04S6N022ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 96A; Idm: 400A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 96A
Pulsed drain current: 400A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUC100N04S6N022ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 100A Automotive 8-Pin TDSON EP T/R

auf Bestellung 5000 Stücke:

Lieferzeit 14-21 Tag (e)

IAUC100N04S6N028ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 77A; Idm: 400A; 62W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Pulsed drain current: 400A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUC100N04S6N028ATMA1

Infineon Technologies

Description: IAUC100N04S6N028ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.86mOhm @ 50A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 24µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 10058 Stücke:

Lieferzeit 21-28 Tag (e)

10+	2.63 EUR
13+	2.14 EUR
100+	1.67 EUR
500+	1.41 EUR
1000+	1.15 EUR
2000+	1.08 EUR

Mindestbestellmenge: 10

IAUC100N04S6N028ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 100A Automotive 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC100N04S6N028ATMA1

Description: INFINEON - IAUC100N04S6N028ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 0.00221 ohm, PG-TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40
rohsCompliant: YES
Dauer-Drainstrom Id: 100
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 62
Gate-Source-Schwellenspannung, max.: 2.6
euEccn: NLR
Verlustleistung: 62
Bauform - Transistor: PG-TDSON
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: OptiMOS 6
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.00221
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.00221
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 1871 Stücke:

Lieferzeit 14-21 Tag (e)

IAUC100N04S6N028ATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 9600 Stücke:

Lieferzeit 14-28 Tag (e)

20+	2.63 EUR
25+	2.16 EUR
100+	1.67 EUR
500+	1.42 EUR
1000+	1.09 EUR
5000+	1.04 EUR

Mindestbestellmenge: 20

IAUC100N04S6N028ATMA1

Infineon Technologies

Description: IAUC100N04S6N028ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.86mOhm @ 50A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 24µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	1.03 EUR

Mindestbestellmenge: 5000

IAUC100N04S6N028ATMA1

Description: INFINEON - IAUC100N04S6N028ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 0.00221 ohm, PG-TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40
rohsCompliant: YES
Dauer-Drainstrom Id: 100
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 62
Gate-Source-Schwellenspannung, max.: 2.6
euEccn: NLR
Verlustleistung: 62
Bauform - Transistor: PG-TDSON
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: OptiMOS 6
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.00221
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.00221
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 1871 Stücke:

Lieferzeit 14-21 Tag (e)

IAUC100N04S6N028ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 77A; Idm: 400A; 62W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Pulsed drain current: 400A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC100N04S6N028ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 100A Automotive 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC100N08S5N031ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 3635 Stücke:

Lieferzeit 14-28 Tag (e)

9+	6.01 EUR
11+	4.99 EUR
100+	3.98 EUR
250+	3.9 EUR
500+	3.35 EUR
1000+	2.7 EUR
5000+	2.6 EUR

Mindestbestellmenge: 9

IAUC100N08S5N031ATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 100A TDSON-8-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5525 pF @ 40 V
Qualification: AEC-Q101

auf Bestellung 4156 Stücke:

Lieferzeit 21-28 Tag (e)

5+	5.95 EUR
10+	4.94 EUR
100+	3.93 EUR
500+	3.33 EUR
1000+	2.82 EUR
2000+	2.68 EUR

Mindestbestellmenge: 5

IAUC100N08S5N031ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC100N08S5N031ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUC100N08S5N031ATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 100A TDSON-8-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5525 pF @ 40 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IAUC100N08S5N031ATMA1

Infineon Technologies

N Channel Power MOSFET

Produkt ist nicht verfügbar

IAUC100N08S5N034ATMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 132A (Tj)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 78µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4559 pF @ 40 V

Produkt ist nicht verfügbar

IAUC100N08S5N034ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 22A
Pulsed drain current: 400A
Power dissipation: 136W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC100N08S5N034ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 22A
Pulsed drain current: 400A
Power dissipation: 136W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUC100N08S5N034ATMA1

Infineon Technologies

SP005423080

Produkt ist nicht verfügbar

IAUC100N08S5N034ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

Produkt ist nicht verfügbar

IAUC100N08S5N043ATMA1

Description: INFINEON - IAUC100N08S5N043ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 100 A, 0.0036 ohm, PG-TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80
rohsCompliant: YES
Dauer-Drainstrom Id: 100
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Verlustleistung Pd: 125
Gate-Source-Schwellenspannung, max.: 3
euEccn: NLR
Verlustleistung: 125
Bauform - Transistor: PG-TDSON
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: OptiMOS-5
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0036
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.0036
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 6409 Stücke:

Lieferzeit 14-21 Tag (e)

IAUC100N08S5N043ATMA1

Infineon Technologies

N Channel Power MOSFET

Produkt ist nicht verfügbar

IAUC100N08S5N043ATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 100A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 63µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3860 pF @ 40 V
Qualification: AEC-Q101

auf Bestellung 9700 Stücke:

Lieferzeit 21-28 Tag (e)

6+	4.86 EUR
10+	4.03 EUR
100+	3.21 EUR
500+	2.72 EUR
1000+	2.3 EUR
2000+	2.19 EUR

Mindestbestellmenge: 6

IAUC100N08S5N043ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 3830 Stücke:

Lieferzeit 14-28 Tag (e)

11+	4.89 EUR
13+	4.06 EUR
100+	3.25 EUR
250+	3.22 EUR
500+	2.73 EUR
1000+	2.2 EUR
5000+	2.13 EUR

Mindestbestellmenge: 11

IAUC100N08S5N043ATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 100A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 63µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3860 pF @ 40 V
Qualification: AEC-Q101

auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	2.11 EUR

Mindestbestellmenge: 5000

IAUC100N08S5N043ATMA1

Description: INFINEON - IAUC100N08S5N043ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 100 A, 0.0036 ohm, PG-TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80
rohsCompliant: YES
Dauer-Drainstrom Id: 100
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Verlustleistung Pd: 125
Gate-Source-Schwellenspannung, max.: 3
euEccn: NLR
Verlustleistung: 125
Bauform - Transistor: PG-TDSON
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: OptiMOS-5
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0036
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.0036
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 6409 Stücke:

Lieferzeit 14-21 Tag (e)

IAUC100N08S5N043ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 5
Pulsed drain current: 400A
Drain-source voltage: 80V
Drain current: 76A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 120W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC100N08S5N043ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 5
Pulsed drain current: 400A
Drain-source voltage: 80V
Drain current: 76A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 120W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V

Produkt ist nicht verfügbar

IAUC100N10S5L040ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 712 Stücke:

Lieferzeit 14-28 Tag (e)

9+	6.34 EUR
10+	5.28 EUR
100+	4.21 EUR
250+	4.19 EUR
500+	3.56 EUR
1000+	2.89 EUR
5000+	2.76 EUR

Mindestbestellmenge: 9

IAUC100N10S5L040ATMA1

Description: INFINEON - IAUC100N10S5L040ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 100 A, 0.0033 ohm, TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.7V
euEccn: NLR
Verlustleistung: 167W
Bauform - Transistor: TDSON
Anzahl der Pins: 8Pins
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0033ohm

auf Bestellung 3218 Stücke:

Lieferzeit 14-21 Tag (e)

IAUC100N10S5L040ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 168W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 168W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC100N10S5L040ATMA1

Infineon Technologies

Description: MOSFET N-CH 100V 100A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V

auf Bestellung 4403 Stücke:

Lieferzeit 21-28 Tag (e)

5+	6.29 EUR
10+	5.22 EUR
100+	4.16 EUR
500+	3.52 EUR
1000+	2.99 EUR
2000+	2.84 EUR

Mindestbestellmenge: 5

IAUC100N10S5L040ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 168W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 168W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUC100N10S5L040ATMA1

Infineon Technologies

N-channel Enhancement mode Power MOSFET

Produkt ist nicht verfügbar

IAUC100N10S5L040ATMA1

Infineon Technologies

Description: MOSFET N-CH 100V 100A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V

Produkt ist nicht verfügbar

IAUC100N10S5L040ATMA1

Description: INFINEON - IAUC100N10S5L040ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 100 A, 0.0033 ohm, TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 167W
Gate-Source-Schwellenspannung, max.: 1.7V
euEccn: NLR
Verlustleistung: 167W
Bauform - Transistor: TDSON
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pins
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0033ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0033ohm

auf Bestellung 3218 Stücke:

Lieferzeit 14-21 Tag (e)

IAUC100N10S5L054ATMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Tj)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 64µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3744 pF @ 50 V

Produkt ist nicht verfügbar

IAUC100N10S5L054ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 400A; 130W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 400A
Power dissipation: 130W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUC100N10S5L054ATMA1

Infineon Technologies

SP005423079

Produkt ist nicht verfügbar

IAUC100N10S5L054ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

Produkt ist nicht verfügbar

IAUC100N10S5L054ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 400A; 130W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 400A
Power dissipation: 130W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC100N10S5N040ATMA1

Description: INFINEON - IAUC100N10S5N040ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 100 A, 0.0034 ohm, TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 167W
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 167W
Bauform - Transistor: TDSON
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pins
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0034ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0034ohm

auf Bestellung 7724 Stücke:

Lieferzeit 14-21 Tag (e)

IAUC100N10S5N040ATMA1

Infineon Technologies

100V, N-Ch, 4 mΩ max, Automotive MOSFET, SS08 (5x6), OptiMOS™-5

Produkt ist nicht verfügbar

IAUC100N10S5N040ATMA1

Infineon Technologies

Description: MOSFET N-CH 100V 100A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V

auf Bestellung 7566 Stücke:

Lieferzeit 21-28 Tag (e)

5+	6.29 EUR
10+	5.22 EUR
100+	4.16 EUR
500+	3.52 EUR
1000+	2.99 EUR
2000+	2.84 EUR

Mindestbestellmenge: 5

IAUC100N10S5N040ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 332 Stücke:

Lieferzeit 14-28 Tag (e)

9+	6.34 EUR
10+	5.28 EUR
100+	4.21 EUR
250+	4.16 EUR
500+	3.56 EUR
1000+	2.89 EUR
5000+	2.76 EUR

Mindestbestellmenge: 9

IAUC100N10S5N040ATMA1

Description: INFINEON - IAUC100N10S5N040ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 100 A, 0.0034 ohm, TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 167W
Bauform - Transistor: TDSON
Anzahl der Pins: 8Pins
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0034ohm

auf Bestellung 7724 Stücke:

Lieferzeit 14-21 Tag (e)

IAUC100N10S5N040ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 167W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC100N10S5N040ATMA1

Infineon Technologies

100V, N-Ch, 4 mΩ max, Automotive MOSFET, SS08 (5x6), OptiMOS™-5

Produkt ist nicht verfügbar

IAUC100N10S5N040ATMA1

Infineon Technologies

Description: MOSFET N-CH 100V 100A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V

Produkt ist nicht verfügbar

IAUC100N10S5N040ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 167W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUC100N10S5N040ATMA1

Infineon Technologies

Trans MOSFET N-CH 100V 100A Automotive 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC120N04S6L005ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 60A; Idm: 1550A
Technology: OptiMOS™ 6
Mounting: SMD
Case: PG-TDSON-8
Kind of package: reel; tape
Power dissipation: 187W
Drain-source voltage: 40V
Drain current: 60A
On-state resistance: 0.8mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 177nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 1550A
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC120N04S6L005ATMA1

Description: INFINEON - IAUC120N04S6L005ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 120 A, 0.00043 ohm, TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 120A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 187W
Gate-Source-Schwellenspannung, max.: 1.6V
euEccn: NLR
Verlustleistung: 187W
Bauform - Transistor: TDSON
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pins
Produktpalette: OptiMOS 6
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 430µohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.00043ohm

auf Bestellung 8899 Stücke:

Lieferzeit 14-21 Tag (e)

IAUC120N04S6L005ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 60A; Idm: 1550A
Technology: OptiMOS™ 6
Mounting: SMD
Case: PG-TDSON-8
Kind of package: reel; tape
Power dissipation: 187W
Drain-source voltage: 40V
Drain current: 60A
On-state resistance: 0.8mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 177nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 1550A

Produkt ist nicht verfügbar

IAUC120N04S6L005ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 435A Automotive AEC-Q101 8-Pin TDSON EP T/R

auf Bestellung 4307 Stücke:

Lieferzeit 14-21 Tag (e)

44+	3.6 EUR
50+	3.05 EUR
52+	2.8 EUR
100+	2.38 EUR
250+	2.19 EUR
500+	1.95 EUR
1000+	1.76 EUR
3000+	1.65 EUR

Mindestbestellmenge: 44

IAUC120N04S6L005ATMA1

Infineon Technologies

Description: IAUC120N04S6L005ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 60A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11203 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 4190 Stücke:

Lieferzeit 21-28 Tag (e)

4+	6.73 EUR
10+	5.67 EUR
100+	4.58 EUR
500+	4.08 EUR
1000+	3.49 EUR
2000+	3.29 EUR

Mindestbestellmenge: 4

IAUC120N04S6L005ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 435A T/R

Produkt ist nicht verfügbar

IAUC120N04S6L005ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 435A Automotive AEC-Q101 8-Pin TDSON EP T/R

auf Bestellung 75000 Stücke:

Lieferzeit 14-21 Tag (e)

5000+	2.64 EUR

Mindestbestellmenge: 5000

IAUC120N04S6L005ATMA1

Description: INFINEON - IAUC120N04S6L005ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 120 A, 0.00043 ohm, TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 120A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.6V
euEccn: NLR
Verlustleistung: 187W
Bauform - Transistor: TDSON
Anzahl der Pins: 8Pins
Produktpalette: OptiMOS 6
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.00043ohm

auf Bestellung 8899 Stücke:

Lieferzeit 14-21 Tag (e)

IAUC120N04S6L005ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 435A Automotive AEC-Q101 8-Pin TDSON EP T/R

auf Bestellung 4011 Stücke:

Lieferzeit 14-21 Tag (e)

46+	3.4 EUR
52+	2.92 EUR
54+	2.69 EUR
100+	2.31 EUR
250+	2.13 EUR
500+	1.91 EUR
1000+	1.74 EUR
3000+	1.65 EUR

Mindestbestellmenge: 46

IAUC120N04S6L005ATMA1

Infineon Technologies

Description: IAUC120N04S6L005ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 60A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11203 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IAUC120N04S6L005ATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 4052 Stücke:

Lieferzeit 14-28 Tag (e)

8+	6.79 EUR
10+	5.72 EUR
100+	4.63 EUR
500+	4.11 EUR
1000+	3.3 EUR

Mindestbestellmenge: 8

IAUC120N04S6L005ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 435A Automotive AEC-Q101 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC120N04S6L008

Infineon Technologies

MOSFET MOSFET_(20V 40V)

Produkt ist nicht verfügbar

IAUC120N04S6L008ATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 10106 Stücke:

Lieferzeit 14-28 Tag (e)

11+	5.04 EUR
12+	4.47 EUR
100+	3.77 EUR
250+	3.74 EUR
500+	3.28 EUR
1000+	2.83 EUR
5000+	2.78 EUR

Mindestbestellmenge: 11

IAUC120N04S6L008ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 120A Automotive 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC120N04S6L008ATMA1

Infineon Technologies

IAUC120N04S6L008ATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 40V 120A Automotive 8-Pin TDSON EP T/R - Arrow.com

Produkt ist nicht verfügbar

IAUC120N04S6L008ATMA1

Infineon Technologies

Description: MOSFET N-CH 40V 120A 8TDSON-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7910 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 9865 Stücke:

Lieferzeit 21-28 Tag (e)

5+	6.34 EUR
10+	5.27 EUR
100+	4.2 EUR
500+	3.55 EUR
1000+	3.01 EUR
2000+	2.86 EUR

Mindestbestellmenge: 5

IAUC120N04S6L008ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 0.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 20nC
Technology: OptiMOS™ 6
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 480A
Mounting: SMD
Case: PG-TDSON-8
Anzahl je Verpackung: 1 Stücke

Produkt ist nicht verfügbar

IAUC120N04S6L008ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 0.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 20nC
Technology: OptiMOS™ 6
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 480A
Mounting: SMD
Case: PG-TDSON-8

Produkt ist nicht verfügbar

IAUC120N04S6L008ATMA1

Infineon Technologies

Description: MOSFET N-CH 40V 120A 8TDSON-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7910 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	2.75 EUR

Mindestbestellmenge: 5000

IAUC120N04S6L009

Infineon Technologies

MOSFET MOSFET_(20V 40V)

Produkt ist nicht verfügbar

IAUC120N04S6L009ATMA1

Infineon Technologies

Description: MOSFET N-CH 40V 150A TDSON-8-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 960mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7806 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25

auf Bestellung 15000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	2.31 EUR
10000+	2.23 EUR

Mindestbestellmenge: 5000

IAUC120N04S6L009ATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 4091 Stücke:

Lieferzeit 14-28 Tag (e)

10+	5.36 EUR
13+	4.19 EUR
100+	3.56 EUR
250+	3.28 EUR
500+	2.96 EUR
1000+	2.41 EUR

Mindestbestellmenge: 10

IAUC120N04S6L009ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC120N04S6L009ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUC120N04S6L009ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 150A Automotive 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC120N04S6L009ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 150A Automotive 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC120N04S6L009ATMA1

Infineon Technologies

Description: MOSFET N-CH 40V 150A TDSON-8-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 960mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7806 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25

auf Bestellung 22744 Stücke:

Lieferzeit 21-28 Tag (e)

5+	5.3 EUR
10+	4.41 EUR
100+	3.51 EUR
500+	2.97 EUR
1000+	2.52 EUR
2000+	2.4 EUR

Mindestbestellmenge: 5

IAUC120N04S6L012ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUC120N04S6L012ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 150A Automotive 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC120N04S6L012ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 150A Automotive 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC120N04S6L012ATMA1

Infineon Technologies

Description: IAUC120N04S6L012ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.21mOhm @ 60A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 60µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4832 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 25000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	1.68 EUR
10000+	1.62 EUR

Mindestbestellmenge: 5000

IAUC120N04S6L012ATMA1

Description: INFINEON - IAUC120N04S6L012ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 150 A, 0.00096 ohm, TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 150A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.6V
euEccn: NLR
Verlustleistung: 115W
Bauform - Transistor: TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 6
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.00096ohm

auf Bestellung 19652 Stücke:

Lieferzeit 14-21 Tag (e)

IAUC120N04S6L012ATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 4691 Stücke:

Lieferzeit 14-28 Tag (e)

14+	3.9 EUR
18+	3.04 EUR
100+	2.59 EUR
250+	2.38 EUR
500+	2.16 EUR
1000+	1.76 EUR

Mindestbestellmenge: 14

IAUC120N04S6L012ATMA1

Description: INFINEON - IAUC120N04S6L012ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 150 A, 0.00096 ohm, TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 150A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 115W
Gate-Source-Schwellenspannung, max.: 1.6V
euEccn: NLR
Verlustleistung: 115W
Bauform - Transistor: TDSON
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 6
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 960µohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.00096ohm

auf Bestellung 19652 Stücke:

Lieferzeit 14-21 Tag (e)

IAUC120N04S6L012ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC120N04S6L012ATMA1

Infineon Technologies

Description: IAUC120N04S6L012ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.21mOhm @ 60A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 60µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4832 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 33142 Stücke:

Lieferzeit 21-28 Tag (e)

7+	3.87 EUR
10+	3.21 EUR
100+	2.56 EUR
500+	2.16 EUR
1000+	1.84 EUR
2000+	1.74 EUR

Mindestbestellmenge: 7

IAUC120N04S6N006ATMA1

Infineon Technologies

Description: IAUC120N04S6N006ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 60A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 3V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10117 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 7540 Stücke:

Lieferzeit 21-28 Tag (e)

4+	6.73 EUR
10+	5.67 EUR
100+	4.58 EUR
500+	4.08 EUR
1000+	3.49 EUR
2000+	3.29 EUR

Mindestbestellmenge: 4

IAUC120N04S6N006ATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 11249 Stücke:

Lieferzeit 14-28 Tag (e)

8+	6.79 EUR
10+	5.72 EUR
25+	5.69 EUR
100+	4.63 EUR
250+	4.6 EUR
500+	4.11 EUR
1000+	3.3 EUR

Mindestbestellmenge: 8

IAUC120N04S6N006ATMA1

Infineon Technologies

Description: IAUC120N04S6N006ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 60A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 3V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10117 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	3.15 EUR

Mindestbestellmenge: 5000

IAUC120N04S6N006ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 405A T/R

auf Bestellung 10000 Stücke:

Lieferzeit 14-21 Tag (e)

IAUC120N04S6N006ATMA1

Infineon Technologies

IAUC120N04S6N006ATMA1

Produkt ist nicht verfügbar

IAUC120N04S6N008ATMA1

Infineon Technologies

Automotive Power Mosfet

Produkt ist nicht verfügbar

IAUC120N04S6N008ATMA1

Infineon Technologies

Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 90µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7150 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IAUC120N04S6N008ATMA1

Infineon Technologies

MOSFET

Produkt ist nicht verfügbar

IAUC120N04S6N009ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 120A Automotive 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC120N04S6N009ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 120A Automotive 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC120N04S6N009ATMA1

Infineon Technologies

Description: MOSFET N-CH 40V 120A 8TDSON-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 90µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IAUC120N04S6N009ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC120N04S6N009ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 120A Automotive 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC120N04S6N009ATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 4010 Stücke:

Lieferzeit 14-28 Tag (e)

14+	3.9 EUR
100+	3.64 EUR
250+	3.46 EUR
500+	3.22 EUR
1000+	2.94 EUR
2500+	2.89 EUR
5000+	2.78 EUR

Mindestbestellmenge: 14

IAUC120N04S6N009ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level

Produkt ist nicht verfügbar

IAUC120N04S6N009ATMA1

Infineon Technologies

Description: MOSFET N-CH 40V 120A 8TDSON-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 90µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IAUC120N04S6N010

Infineon Technologies

MOSFET MOSFET_(20V 40V)

Produkt ist nicht verfügbar

IAUC120N04S6N010ATMA1

Infineon Technologies

Description: MOSFET N-CH 40V 150A TDSON-8-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6878 pF @ 25 V

auf Bestellung 14899 Stücke:

Lieferzeit 21-28 Tag (e)

5+	5.3 EUR
10+	4.41 EUR
100+	3.51 EUR
500+	2.97 EUR
1000+	2.52 EUR
2000+	2.4 EUR

Mindestbestellmenge: 5

IAUC120N04S6N010ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 150A Automotive AEC-Q101 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC120N04S6N010ATMA1

Infineon Technologies

Description: MOSFET N-CH 40V 150A TDSON-8-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6878 pF @ 25 V

auf Bestellung 10000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	2.31 EUR
10000+	2.23 EUR

Mindestbestellmenge: 5000

IAUC120N04S6N010ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 150A Automotive 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC120N04S6N010ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 150A Automotive AEC-Q101 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC120N04S6N010ATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 334 Stücke:

Lieferzeit 14-28 Tag (e)

10+	5.54 EUR
12+	4.6 EUR
100+	3.67 EUR
250+	3.59 EUR
500+	3.09 EUR
1000+	2.51 EUR
2500+	2.49 EUR

Mindestbestellmenge: 10

IAUC120N04S6N013ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 150A Automotive 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC120N04S6N013ATMA1

Infineon Technologies

Description: IAUC120N04S6N013ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 60A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4260 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 19570 Stücke:

Lieferzeit 21-28 Tag (e)

7+	3.87 EUR
10+	3.21 EUR
100+	2.56 EUR
500+	2.16 EUR
1000+	1.84 EUR
2000+	1.74 EUR

Mindestbestellmenge: 7

IAUC120N04S6N013ATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 13592 Stücke:

Lieferzeit 312-326 Tag (e)

14+	3.9 EUR
16+	3.25 EUR
100+	2.59 EUR
250+	2.54 EUR
500+	2.16 EUR
1000+	1.76 EUR
5000+	1.7 EUR

Mindestbestellmenge: 14

IAUC120N04S6N013ATMA1

Infineon Technologies

Description: IAUC120N04S6N013ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 60A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4260 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 15000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	1.68 EUR
10000+	1.62 EUR

Mindestbestellmenge: 5000

IAUC120N04S6N013ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 150A Automotive 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC120N06S5L011ATMA1

Infineon Technologies

Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 60A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 30 V

auf Bestellung 3869 Stücke:

Lieferzeit 21-28 Tag (e)

4+	6.86 EUR
10+	5.77 EUR
100+	4.67 EUR
500+	4.15 EUR
1000+	3.55 EUR
2000+	3.35 EUR

Mindestbestellmenge: 4

IAUC120N06S5L011ATMA1

Infineon Technologies

IAUC120N06S5L011 Trans MOSFET T/R

Produkt ist nicht verfügbar

IAUC120N06S5L011ATMA1

Infineon Technologies

Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 60A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 30 V

Produkt ist nicht verfügbar

IAUC120N06S5L011ATMA1

Infineon Technologies

MOSFET

Produkt ist nicht verfügbar

IAUC120N06S5L015ATMA1

Infineon Technologies

Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 235A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8193 pF @ 30 V

Produkt ist nicht verfügbar

IAUC120N06S5L015ATMA1

Infineon Technologies

Automotive AEC-Q101 Power Mosfet

Produkt ist nicht verfügbar

IAUC120N06S5L015ATMA1

Infineon Technologies

MOSFET

Produkt ist nicht verfügbar

IAUC120N06S5L022ATMA1

Infineon Technologies

MOSFET

Produkt ist nicht verfügbar

IAUC120N06S5L022ATMA1

Infineon Technologies

Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 60A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 65µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5651 pF @ 30 V

auf Bestellung 4918 Stücke:

Lieferzeit 21-28 Tag (e)

7+	4 EUR
10+	3.34 EUR
100+	2.65 EUR
500+	2.25 EUR
1000+	1.91 EUR
2000+	1.81 EUR

Mindestbestellmenge: 7

IAUC120N06S5L022ATMA1

Infineon Technologies

Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 60A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 65µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5651 pF @ 30 V

Produkt ist nicht verfügbar

IAUC120N06S5L022ATMA1

Infineon Technologies

Automotive Power Mosfet

Produkt ist nicht verfügbar

IAUC120N06S5L032ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 364A
Power dissipation: 94W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 51.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC120N06S5L032ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 364A
Power dissipation: 94W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 51.5nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUC120N06S5L032ATMA1

Infineon Technologies

Description: MOSFET N-CH 60V 120A TDSON-8-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 44µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3823 pF @ 30 V

auf Bestellung 47956 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.67 EUR
10+	3.01 EUR
100+	2.34 EUR
500+	1.98 EUR
1000+	1.61 EUR
2000+	1.52 EUR

Mindestbestellmenge: 8

IAUC120N06S5L032ATMA1

Infineon Technologies

Trans MOSFET N-CH 60V 129A Automotive 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC120N06S5L032ATMA1

Infineon Technologies

Trans MOSFET N-CH 60V 129A Automotive 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC120N06S5L032ATMA1

Infineon Technologies

MOSFET MOSFET_)40V 60V)

auf Bestellung 5000 Stücke:

Lieferzeit 14-28 Tag (e)

15+	3.67 EUR
18+	3.04 EUR
100+	2.42 EUR
250+	2.32 EUR
500+	2.03 EUR
1000+	1.65 EUR

Mindestbestellmenge: 15

IAUC120N06S5L032ATMA1

Infineon Technologies

Description: MOSFET N-CH 60V 120A TDSON-8-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 44µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3823 pF @ 30 V

auf Bestellung 45000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	1.45 EUR
10000+	1.38 EUR

Mindestbestellmenge: 5000

IAUC120N06S5N011ATMA1

Infineon Technologies

Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tj)
Rds On (Max) @ Id, Vgs: 1.12mOhm @ 60A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9822 pF @ 30 V

Produkt ist nicht verfügbar

IAUC120N06S5N011ATMA1

Infineon Technologies

Automotive Power Mosfet

Produkt ist nicht verfügbar

IAUC120N06S5N011ATMA1

Infineon Technologies

MOSFET

Produkt ist nicht verfügbar

IAUC120N06S5N017ATMA1

Infineon Technologies

Trans MOSFET N-CH 60V 226A Automotive T/R

Produkt ist nicht verfügbar

IAUC120N06S5N017ATMA1

Infineon Technologies

Description: MOSFET N-CH 60V 120A TDSON-8-43
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V

auf Bestellung 8413 Stücke:

Lieferzeit 21-28 Tag (e)

5+	5.93 EUR
10+	4.92 EUR
100+	3.92 EUR
500+	3.31 EUR
1000+	2.81 EUR
2000+	2.67 EUR

Mindestbestellmenge: 5

IAUC120N06S5N017ATMA1

Infineon Technologies

Description: MOSFET N-CH 60V 120A TDSON-8-43
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V

auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	2.57 EUR

Mindestbestellmenge: 5000

IAUC120N06S5N017ATMA1

Infineon Technologies

Trans MOSFET N-CH 60V 226A Automotive T/R

Produkt ist nicht verfügbar

IAUC120N06S5N017ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 757A; 167W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 757A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 95.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC120N06S5N017ATMA1

Infineon Technologies

Trans MOSFET N-CH 60V 226A Automotive 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC120N06S5N017ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 757A; 167W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 757A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 95.9nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUC120N06S5N017ATMA1

Infineon Technologies

MOSFET MOSFET_)40V 60V)

auf Bestellung 13250 Stücke:

Lieferzeit 14-28 Tag (e)

9+	5.98 EUR
11+	4.91 EUR
100+	3.98 EUR
250+	3.64 EUR
500+	3.3 EUR
1000+	2.7 EUR
5000+	2.6 EUR

Mindestbestellmenge: 9

IAUC120N06S5N022ATMA1

Infineon Technologies

Automotive AEC-Q101 Power Mosfet

Produkt ist nicht verfügbar

IAUC120N06S5N022ATMA1

Infineon Technologies

MOSFET

Produkt ist nicht verfügbar

IAUC120N06S5N022ATMA1

Infineon Technologies

Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 2.24mOhm @ 60A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 65µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 30 V

Produkt ist nicht verfügbar

IAUC120N06S5N032ATMA1

Infineon Technologies

Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 3.23mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 44µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3446 pF @ 30 V

auf Bestellung 7477 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.59 EUR
10+	2.97 EUR
100+	2.37 EUR
500+	2 EUR
1000+	1.7 EUR
2000+	1.61 EUR

Mindestbestellmenge: 8

IAUC120N06S5N032ATMA1

Infineon Technologies

MOSFET

Produkt ist nicht verfügbar

IAUC120N06S5N032ATMA1

Infineon Technologies

Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 3.23mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 44µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3446 pF @ 30 V

auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	1.55 EUR

Mindestbestellmenge: 5000

IAUC120N06S5N032ATMA1

Infineon Technologies

Automotive Power Mosfet

Produkt ist nicht verfügbar

IAUC24N10S5L300ATMA1

Infineon Technologies

Description: MOSFET N-CH 100V 24A TDSON-8-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 12µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V

auf Bestellung 4646 Stücke:

Lieferzeit 21-28 Tag (e)

12+	2.31 EUR
14+	1.88 EUR
100+	1.46 EUR
500+	1.24 EUR
1000+	1.01 EUR
2000+	0.95 EUR

Mindestbestellmenge: 12

IAUC24N10S5L300ATMA1

Infineon Technologies

Opti MOST-5 Power Transistor

auf Bestellung 5005 Stücke:

Lieferzeit 14-21 Tag (e)

91+	1.72 EUR

Mindestbestellmenge: 91

IAUC24N10S5L300ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 96A; 38W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Pulsed drain current: 96A
Power dissipation: 38W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC24N10S5L300ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 96A; 38W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Pulsed drain current: 96A
Power dissipation: 38W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUC24N10S5L300ATMA1

Infineon Technologies

Opti MOST-5 Power Transistor

Produkt ist nicht verfügbar

IAUC24N10S5L300ATMA1

Infineon Technologies

Description: MOSFET N-CH 100V 24A TDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 12µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V

Produkt ist nicht verfügbar

IAUC24N10S5L300ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 6102 Stücke:

Lieferzeit 14-28 Tag (e)

23+	2.27 EUR
28+	1.86 EUR
100+	1.47 EUR
500+	1.25 EUR
1000+	0.96 EUR
5000+	0.91 EUR
10000+	0.9 EUR

Mindestbestellmenge: 23

IAUC26N10S5L245ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7A; Idm: 104A; 40W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7A
Pulsed drain current: 104A
Power dissipation: 40W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 37.8mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUC26N10S5L245ATMA1

Infineon Technologies

SP005423082

Produkt ist nicht verfügbar

IAUC26N10S5L245ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

Produkt ist nicht verfügbar

IAUC26N10S5L245ATMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tj)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 13A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 762 pF @ 50 V

auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)

10+	2.73 EUR
12+	2.23 EUR
100+	1.73 EUR
500+	1.47 EUR
1000+	1.2 EUR
2000+	1.13 EUR

Mindestbestellmenge: 10

IAUC26N10S5L245ATMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tj)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 13A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 762 pF @ 50 V

auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	1.07 EUR

Mindestbestellmenge: 5000

IAUC26N10S5L245ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7A; Idm: 104A; 40W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7A
Pulsed drain current: 104A
Power dissipation: 40W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 37.8mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC28N08S5L230ATMA1

Description: INFINEON - IAUC28N08S5L230ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 28 A, 0.015 ohm, TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80
rohsCompliant: YES
Dauer-Drainstrom Id: 28
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Verlustleistung Pd: 38
Gate-Source-Schwellenspannung, max.: 1.6
euEccn: NLR
Verlustleistung: 38
Bauform - Transistor: TDSON
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.015
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.015
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 20000 Stücke:

Lieferzeit 14-21 Tag (e)

IAUC28N08S5L230ATMA1
Produktcode: 193844

Transistoren > MOSFET N-CH

Produkt ist nicht verfügbar

IAUC28N08S5L230ATMA1

Infineon Technologies

Automotive Power Mosfet

auf Bestellung 5000 Stücke:

Lieferzeit 14-21 Tag (e)

90+	1.75 EUR
101+	1.5 EUR
106+	1.38 EUR
111+	1.26 EUR
133+	1.01 EUR
250+	0.92 EUR
500+	0.75 EUR
1000+	0.62 EUR
3000+	0.59 EUR

Mindestbestellmenge: 90

IAUC28N08S5L230ATMA1

INFINEON TECHNOLOGIES

IAUC28N08S5L230 SMD N channel transistors

Produkt ist nicht verfügbar

IAUC28N08S5L230ATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 28A 8TDSON-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 14A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 14695 Stücke:

Lieferzeit 21-28 Tag (e)

12+	2.21 EUR
15+	1.81 EUR
100+	1.41 EUR
500+	1.2 EUR
1000+	0.97 EUR
2000+	0.92 EUR

Mindestbestellmenge: 12

IAUC28N08S5L230ATMA1

Description: INFINEON - IAUC28N08S5L230ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 28 A, 0.015 ohm, TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80
rohsCompliant: YES
Dauer-Drainstrom Id: 28
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Verlustleistung Pd: 38
Gate-Source-Schwellenspannung, max.: 1.6
euEccn: NLR
Verlustleistung: 38
Bauform - Transistor: TDSON
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.015
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.015
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 20000 Stücke:

Lieferzeit 14-21 Tag (e)

IAUC28N08S5L230ATMA1

Infineon Technologies

H8 84R5 0.1% 25PPM

Produkt ist nicht verfügbar

IAUC28N08S5L230ATMA1

Infineon Technologies

Automotive Power Mosfet

auf Bestellung 5000 Stücke:

Lieferzeit 14-21 Tag (e)

101+	1.55 EUR
106+	1.43 EUR
111+	1.32 EUR
133+	1.05 EUR
250+	0.96 EUR
500+	0.79 EUR
1000+	0.62 EUR
3000+	0.59 EUR

Mindestbestellmenge: 101

IAUC28N08S5L230ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 6706 Stücke:

Lieferzeit 14-28 Tag (e)

24+	2.23 EUR
30+	1.74 EUR
100+	1.4 EUR
500+	1.2 EUR
1000+	0.92 EUR
5000+	0.88 EUR

Mindestbestellmenge: 24

IAUC28N08S5L230ATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 28A 8TDSON-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 14A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 10000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	0.87 EUR
10000+	0.83 EUR

Mindestbestellmenge: 5000

IAUC40N08S5L140ATMA1

INFINEON TECHNOLOGIES

IAUC40N08S5L140 SMD N channel transistors

Produkt ist nicht verfügbar

IAUC40N08S5L140ATMA1

Infineon Technologies

SP005422123

Produkt ist nicht verfügbar

IAUC40N08S5L140ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

Produkt ist nicht verfügbar

IAUC41N06S5L100ATMA1

Infineon Technologies

MOSFET MOSFET_)40V 60V)

auf Bestellung 9117 Stücke:

Lieferzeit 14-28 Tag (e)

24+	2.18 EUR
31+	1.71 EUR
100+	1.36 EUR
500+	1.18 EUR
1000+	0.9 EUR
5000+	0.86 EUR
10000+	0.85 EUR

Mindestbestellmenge: 24

IAUC41N06S5L100ATMA1

Infineon Technologies

Description: MOSFET N-CH 60V 41A TDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tj)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 30 V

auf Bestellung 29873 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	0.85 EUR
10000+	0.81 EUR

Mindestbestellmenge: 5000

IAUC41N06S5L100ATMA1

INFINEON TECHNOLOGIES

IAUC41N06S5L100 SMD N channel transistors

Produkt ist nicht verfügbar

IAUC41N06S5L100ATMA1

Infineon Technologies

Description: MOSFET N-CH 60V 41A TDSON-8-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tj)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 30 V

auf Bestellung 29873 Stücke:

Lieferzeit 21-28 Tag (e)

13+	2.13 EUR
15+	1.76 EUR
100+	1.37 EUR
500+	1.16 EUR
1000+	0.94 EUR
2000+	0.89 EUR

Mindestbestellmenge: 13

IAUC41N06S5L100ATMA1

Infineon Technologies

Trans MOSFET N-CH 60V 41A Automotive 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC41N06S5N102ATMA1

INFINEON TECHNOLOGIES

IAUC41N06S5N102 SMD N channel transistors

Produkt ist nicht verfügbar

IAUC41N06S5N102ATMA1

Infineon Technologies

Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tj)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1112.1 pF @ 30 V
Qualification: AEC-Q101

auf Bestellung 10000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	0.82 EUR
10000+	0.76 EUR

Mindestbestellmenge: 5000

IAUC41N06S5N102ATMA1

Infineon Technologies

SP003244390

Produkt ist nicht verfügbar

IAUC41N06S5N102ATMA1

Infineon Technologies

MOSFET MOSFET_)40V 60V)

auf Bestellung 1761 Stücke:

Lieferzeit 14-28 Tag (e)

25+	2.08 EUR
31+	1.71 EUR
100+	1.33 EUR
500+	1.13 EUR
1000+	0.92 EUR
5000+	0.81 EUR

Mindestbestellmenge: 25

IAUC41N06S5N102ATMA1

Infineon Technologies

Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tj)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1112.1 pF @ 30 V
Qualification: AEC-Q101

auf Bestellung 14870 Stücke:

Lieferzeit 21-28 Tag (e)

12+	2.29 EUR
14+	1.97 EUR
100+	1.36 EUR
500+	1.14 EUR
1000+	0.97 EUR
2000+	0.86 EUR

Mindestbestellmenge: 12

IAUC45N04S6L063HATMA1

Infineon Technologies

SP004134516

Produkt ist nicht verfügbar

IAUC45N04S6L063HATMA1

Infineon Technologies

Automotive Power Mosfet

Produkt ist nicht verfügbar

IAUC45N04S6L063HATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 9700 Stücke:

Lieferzeit 14-28 Tag (e)

16+	3.28 EUR
22+	2.42 EUR
100+	2.03 EUR
500+	1.77 EUR
1000+	1.39 EUR
2500+	1.36 EUR
5000+	1.28 EUR

Mindestbestellmenge: 16

IAUC45N04S6L063HATMA1

Infineon Technologies

SP004134516

Produkt ist nicht verfügbar

IAUC45N04S6L063HATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 15A; Idm: 134A; 41W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 15A
Pulsed drain current: 134A
Power dissipation: 41W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUC45N04S6L063HATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 15A; Idm: 134A; 41W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 15A
Pulsed drain current: 134A
Power dissipation: 41W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC45N04S6N070HATMA1

Infineon Technologies

Description: MOSFET 2N-CH 40V 45A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V
Rds On (Max) @ Id, Vgs: 7mOhm @ 22A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 9µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101

auf Bestellung 20219 Stücke:

Lieferzeit 21-28 Tag (e)

9+	3.22 EUR
10+	2.64 EUR
100+	2.05 EUR
500+	1.74 EUR
1000+	1.42 EUR
2000+	1.34 EUR

Mindestbestellmenge: 9

IAUC45N04S6N070HATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 14A; Idm: 119A; 41W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 14A
Pulsed drain current: 119A
Power dissipation: 41W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUC45N04S6N070HATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 14A; Idm: 119A; 41W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 14A
Pulsed drain current: 119A
Power dissipation: 41W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC45N04S6N070HATMA1

Infineon Technologies

Description: MOSFET 2N-CH 40V 45A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V
Rds On (Max) @ Id, Vgs: 7mOhm @ 22A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 9µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101

auf Bestellung 15000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	1.27 EUR
10000+	1.21 EUR

Mindestbestellmenge: 5000

IAUC45N04S6N070HATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 55A Automotive T/R

Produkt ist nicht verfügbar

IAUC45N04S6N070HATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 8441 Stücke:

Lieferzeit 14-28 Tag (e)

16+	3.28 EUR
21+	2.54 EUR
100+	2.06 EUR
500+	1.77 EUR
1000+	1.36 EUR
2500+	1.35 EUR
5000+	1.29 EUR

Mindestbestellmenge: 16

IAUC50N08S5L096ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 16A; Idm: 200A; 60W; PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 60W
Pulsed drain current: 200A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 16A
On-state resistance: 13.9mΩ
Gate charge: 29nC
Case: PG-TDSON-8
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Technology: OptiMOS™ 5
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC50N08S5L096ATMA1

Infineon Technologies

SP005423083

Produkt ist nicht verfügbar

IAUC50N08S5L096ATMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 24µA
Supplier Device Package: PG-TDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1684 pF @ 40 V

auf Bestellung 8424 Stücke:

Lieferzeit 21-28 Tag (e)

9+	3.04 EUR
11+	2.5 EUR
100+	1.95 EUR
500+	1.65 EUR
1000+	1.34 EUR
2000+	1.27 EUR

Mindestbestellmenge: 9

IAUC50N08S5L096ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

Produkt ist nicht verfügbar

IAUC50N08S5L096ATMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 24µA
Supplier Device Package: PG-TDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1684 pF @ 40 V

auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	1.21 EUR

Mindestbestellmenge: 5000

IAUC50N08S5L096ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 16A; Idm: 200A; 60W; PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 60W
Pulsed drain current: 200A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 16A
On-state resistance: 13.9mΩ
Gate charge: 29nC
Case: PG-TDSON-8
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Technology: OptiMOS™ 5

Produkt ist nicht verfügbar

IAUC50N08S5N102ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

Produkt ist nicht verfügbar

IAUC50N08S5N102ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 200A; 60W; PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 60W
Pulsed drain current: 200A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 12A
On-state resistance: 15.8mΩ
Gate charge: 21nC
Case: PG-TDSON-8
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Technology: OptiMOS™ 5

Produkt ist nicht verfügbar

IAUC50N08S5N102ATMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 24µA
Supplier Device Package: PG-TDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1394 pF @ 40 V

auf Bestellung 4980 Stücke:

Lieferzeit 21-28 Tag (e)

7+	3.8 EUR
10+	3.1 EUR
100+	2.41 EUR
500+	2.05 EUR
1000+	1.67 EUR
2000+	1.57 EUR

Mindestbestellmenge: 7

IAUC50N08S5N102ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 200A; 60W; PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 60W
Pulsed drain current: 200A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 12A
On-state resistance: 15.8mΩ
Gate charge: 21nC
Case: PG-TDSON-8
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Technology: OptiMOS™ 5
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC50N08S5N102ATMA1

Infineon Technologies

SP005423084

Produkt ist nicht verfügbar

IAUC50N08S5N102ATMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 24µA
Supplier Device Package: PG-TDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1394 pF @ 40 V

Produkt ist nicht verfügbar

IAUC60N04S6L030HATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUC60N04S6L030HATMA1

Infineon Technologies

Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IAUC60N04S6L030HATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC60N04S6L030HATMA1

Infineon Technologies

Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 18959 Stücke:

Lieferzeit 21-28 Tag (e)

303+	2.35 EUR

Mindestbestellmenge: 303

IAUC60N04S6L030HATMA1

Infineon Technologies

SP004134512

Produkt ist nicht verfügbar

IAUC60N04S6L030HATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 13958 Stücke:

Lieferzeit 14-28 Tag (e)

19+	2.89 EUR
20+	2.6 EUR
100+	2.34 EUR
250+	2.27 EUR
500+	2.04 EUR
1000+	1.99 EUR
5000+	1.92 EUR

Mindestbestellmenge: 19

IAUC60N04S6L030HATMA1

Infineon Technologies

Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IAUC60N04S6L039

Infineon Technologies

MOSFET MOSFET_(20V 40V)

Produkt ist nicht verfügbar

IAUC60N04S6L039ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 60A Automotive 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC60N04S6L039ATMA1

Description: INFINEON - IAUC60N04S6L039ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 60 A, 0.00328 ohm, TDSON, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 60A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.6V
euEccn: NLR
Verlustleistung: 42W
Anzahl der Pins: 8Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.00328ohm

auf Bestellung 5928 Stücke:

Lieferzeit 14-21 Tag (e)

IAUC60N04S6L039ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 60A Automotive AEC-Q101 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC60N04S6L039ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 60A Automotive AEC-Q101 8-Pin TDSON EP T/R

auf Bestellung 15097 Stücke:

Lieferzeit 14-21 Tag (e)

123+	1.27 EUR
145+	1.04 EUR
169+	0.86 EUR
200+	0.79 EUR
500+	0.71 EUR
1000+	0.63 EUR
5000+	0.53 EUR
10000+	0.5 EUR

Mindestbestellmenge: 123

IAUC60N04S6L039ATMA1

Infineon Technologies

Description: IAUC60N04S6L039ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.02mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1179 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 18590 Stücke:

Lieferzeit 21-28 Tag (e)

13+	2.03 EUR
16+	1.66 EUR
100+	1.29 EUR
500+	1.09 EUR
1000+	0.89 EUR
2000+	0.84 EUR

Mindestbestellmenge: 13

IAUC60N04S6L039ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 54A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 54A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUC60N04S6L039ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 54A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 54A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC60N04S6L039ATMA1

Description: INFINEON - IAUC60N04S6L039ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 60 A, 0.00328 ohm, TDSON, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 60A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Verlustleistung Pd: 42W
Gate-Source-Schwellenspannung, max.: 1.6V
euEccn: NLR
Verlustleistung: 42W
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pin(s)
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.00328ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.00328ohm

auf Bestellung 5928 Stücke:

Lieferzeit 14-21 Tag (e)

IAUC60N04S6L039ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 60A Automotive AEC-Q101 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC60N04S6L039ATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 5851 Stücke:

Lieferzeit 14-28 Tag (e)

26+	2.01 EUR
32+	1.65 EUR
100+	1.28 EUR
500+	1.09 EUR
1000+	0.88 EUR
2500+	0.83 EUR
5000+	0.79 EUR

Mindestbestellmenge: 26

IAUC60N04S6L039ATMA1

Infineon Technologies

Description: IAUC60N04S6L039ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.02mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1179 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 15000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	0.8 EUR
10000+	0.76 EUR

Mindestbestellmenge: 5000

IAUC60N04S6L045HATMA1

Infineon Technologies

Automotive Power Mosfet

Produkt ist nicht verfügbar

IAUC60N04S6L045HATMA1

Infineon Technologies

Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 52W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1136pF @ 25V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101

auf Bestellung 25000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	1.71 EUR
10000+	1.65 EUR

Mindestbestellmenge: 5000

IAUC60N04S6L045HATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 18A; Idm: 193A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Pulsed drain current: 193A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUC60N04S6L045HATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 18A; Idm: 193A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Pulsed drain current: 193A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC60N04S6L045HATMA1

Description: INFINEON - IAUC60N04S6L045HATMA1 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 60 A, 60 A, 0.0037 ohm
tariffCode: 85412900
Wandlerpolarität: n-Kanal
Betriebstemperatur, max.: 175
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0037
Anzahl der Pins: 8
Dauer-Drainstrom Id, p-Kanal: 60
Dauer-Drainstrom Id, n-Kanal: 60
MSL: MSL 1 - unbegrenzt
hazardous: false
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10
Produktpalette: OptiMOS 6 Series
Bauform - Transistor: TDSON
Gate-Source-Schwellenspannung, max.: 1.6
euEccn: NLR
rohsCompliant: YES
Verlustleistung, n-Kanal: 52
Drain-Source-Spannung Vds: 40
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 40
Verlustleistung, p-Kanal: 52
Drain-Source-Spannung Vds, n-Kanal: 40
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0037
Dauer-Drainstrom Id: 60
rohsPhthalatesCompliant: YES
Betriebswiderstand, Rds(on): 0.0037
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
usEccn: EAR99
Transistormontage: Oberflächenmontage
Verlustleistung Pd: 52
SVHC: No SVHC (08-Jul-2021)

auf Bestellung 20000 Stücke:

Lieferzeit 14-21 Tag (e)

IAUC60N04S6L045HATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 3931 Stücke:

Lieferzeit 14-28 Tag (e)

14+	3.87 EUR
18+	2.99 EUR
100+	2.59 EUR
250+	2.51 EUR
500+	2.17 EUR
1000+	1.76 EUR
2500+	1.75 EUR

Mindestbestellmenge: 14

IAUC60N04S6L045HATMA1

Infineon Technologies

SP004134514

Produkt ist nicht verfügbar

IAUC60N04S6L045HATMA1

Infineon Technologies

Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 52W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1136pF @ 25V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101

auf Bestellung 29632 Stücke:

Lieferzeit 21-28 Tag (e)

7+	3.93 EUR
10+	3.27 EUR
100+	2.6 EUR
500+	2.2 EUR
1000+	1.87 EUR
2000+	1.78 EUR

Mindestbestellmenge: 7

IAUC60N04S6L045HATMA1

Description: INFINEON - IAUC60N04S6L045HATMA1 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 60 A, 60 A, 0.0037 ohm
tariffCode: 85412900
Wandlerpolarität: n-Kanal
Betriebstemperatur, max.: 175
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0037
Anzahl der Pins: 8
Dauer-Drainstrom Id, p-Kanal: 60
Dauer-Drainstrom Id, n-Kanal: 60
MSL: MSL 1 - unbegrenzt
hazardous: false
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10
Produktpalette: OptiMOS 6 Series
Bauform - Transistor: TDSON
Gate-Source-Schwellenspannung, max.: 1.6
euEccn: NLR
rohsCompliant: YES
Verlustleistung, n-Kanal: 52
Drain-Source-Spannung Vds: 40
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 40
Verlustleistung, p-Kanal: 52
Drain-Source-Spannung Vds, n-Kanal: 40
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0037
Dauer-Drainstrom Id: 60
rohsPhthalatesCompliant: YES
Betriebswiderstand, Rds(on): 0.0037
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
usEccn: EAR99
Transistormontage: Oberflächenmontage
Verlustleistung Pd: 52
SVHC: No SVHC (08-Jul-2021)

auf Bestellung 20000 Stücke:

Lieferzeit 14-21 Tag (e)

IAUC60N04S6N031HATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 6756 Stücke:

Lieferzeit 14-28 Tag (e)

12+	4.37 EUR
15+	3.56 EUR
100+	2.91 EUR
250+	2.81 EUR
500+	2.4 EUR
1000+	1.99 EUR
2500+	1.98 EUR

Mindestbestellmenge: 12

IAUC60N04S6N031HATMA1

Infineon Technologies

SP003863382

Produkt ist nicht verfügbar

IAUC60N04S6N031HATMA1

Infineon Technologies

Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1922pF @ 25V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101

auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	1.9 EUR

Mindestbestellmenge: 5000

IAUC60N04S6N031HATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUC60N04S6N031HATMA1

Infineon Technologies

Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1922pF @ 25V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101

auf Bestellung 9643 Stücke:

Lieferzeit 21-28 Tag (e)

6+	4.37 EUR
10+	3.63 EUR
100+	2.89 EUR
500+	2.45 EUR
1000+	2.08 EUR
2000+	1.97 EUR

Mindestbestellmenge: 6

IAUC60N04S6N031HATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC60N04S6N044

Infineon Technologies

MOSFET MOSFET_(20V 40V)

Produkt ist nicht verfügbar

IAUC60N04S6N044ATMA1

Infineon Technologies

Description: IAUC60N04S6N044ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 14µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 14153 Stücke:

Lieferzeit 21-28 Tag (e)

14+	1.98 EUR
17+	1.62 EUR
100+	1.26 EUR
500+	1.07 EUR
1000+	0.87 EUR
2000+	0.82 EUR

Mindestbestellmenge: 14

IAUC60N04S6N044ATMA1

Description: INFINEON - IAUC60N04S6N044ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 60 A, 0.00353 ohm, PG-TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 60A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 42W
Gate-Source-Schwellenspannung, max.: 2.6V
euEccn: NLR
Verlustleistung: 42W
Bauform - Transistor: PG-TDSON
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pins
Produktpalette: OptiMOS 6
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.00353ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.00353ohm

auf Bestellung 3501 Stücke:

Lieferzeit 14-21 Tag (e)

IAUC60N04S6N044ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 60A Automotive AEC-Q101 8-Pin TDSON EP T/R

auf Bestellung 4880 Stücke:

Lieferzeit 14-21 Tag (e)

95+	1.65 EUR
106+	1.42 EUR
130+	1.12 EUR
200+	1.01 EUR
500+	0.84 EUR
1000+	0.73 EUR

Mindestbestellmenge: 95

IAUC60N04S6N044ATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 3506 Stücke:

Lieferzeit 14-28 Tag (e)

26+	2.01 EUR
32+	1.65 EUR
100+	1.29 EUR
500+	1.09 EUR
1000+	0.84 EUR
5000+	0.79 EUR

Mindestbestellmenge: 26

IAUC60N04S6N044ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 50A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUC60N04S6N044ATMA1

Infineon Technologies

Description: IAUC60N04S6N044ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 14µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 10000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	0.78 EUR
10000+	0.75 EUR

Mindestbestellmenge: 5000

IAUC60N04S6N044ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 50A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC60N04S6N044ATMA1

Description: INFINEON - IAUC60N04S6N044ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 60 A, 0.00353 ohm, PG-TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 60A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.6V
euEccn: NLR
Verlustleistung: 42W
Bauform - Transistor: PG-TDSON
Anzahl der Pins: 8Pins
Produktpalette: OptiMOS 6
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.00353ohm

auf Bestellung 3501 Stücke:

Lieferzeit 14-21 Tag (e)

IAUC60N04S6N044ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 60A Automotive AEC-Q101 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC60N04S6N044ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 60A Automotive AEC-Q101 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC60N04S6N044ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 60A Automotive 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC60N04S6N050HATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 16A; Idm: 171A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Pulsed drain current: 171A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC60N04S6N050HATMA1

Infineon Technologies

Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 52W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1027pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 13µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101

auf Bestellung 4993 Stücke:

Lieferzeit 21-28 Tag (e)

7+	3.93 EUR
10+	3.27 EUR
100+	2.6 EUR
500+	2.2 EUR
1000+	1.87 EUR
2000+	1.78 EUR

Mindestbestellmenge: 7

IAUC60N04S6N050HATMA1

Infineon Technologies

Trans MOSFET N-CH 4

Produkt ist nicht verfügbar

IAUC60N04S6N050HATMA1

Infineon Technologies

Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 52W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1027pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 13µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IAUC60N04S6N050HATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 3066 Stücke:

Lieferzeit 14-28 Tag (e)

14+	3.98 EUR
17+	3.07 EUR
100+	2.49 EUR
500+	2.13 EUR
1000+	1.64 EUR
5000+	1.56 EUR

Mindestbestellmenge: 14

IAUC60N04S6N050HATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 16A; Idm: 171A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Pulsed drain current: 171A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUC60N06S5L073ATMA1

Infineon Technologies

Automotive Power Mosfet

Produkt ist nicht verfügbar

IAUC60N06S5L073ATMA1

Infineon Technologies

MOSFET MOSFET_)40V 60V)

Produkt ist nicht verfügbar

IAUC60N06S5L073ATMA1

Infineon Technologies

Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 30A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 19µA
Supplier Device Package: PG-TDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 4715 Stücke:

Lieferzeit 21-28 Tag (e)

10+	2.83 EUR
12+	2.31 EUR
100+	1.8 EUR
500+	1.52 EUR
1000+	1.24 EUR
2000+	1.17 EUR

Mindestbestellmenge: 10

IAUC60N06S5L073ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 168A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 22.6nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUC60N06S5L073ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 168A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 22.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC60N06S5L073ATMA1

Infineon Technologies

Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 30A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 19µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IAUC60N06S5N074ATMA1

Infineon Technologies

Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 19µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1461 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IAUC60N06S5N074ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 168A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUC60N06S5N074ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 168A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC60N06S5N074ATMA1

Infineon Technologies

Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 19µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1461 pF @ 30 V
Qualification: AEC-Q101

auf Bestellung 4567 Stücke:

Lieferzeit 21-28 Tag (e)

12+	2.24 EUR
15+	1.83 EUR
100+	1.42 EUR
500+	1.2 EUR
1000+	0.98 EUR
2000+	0.92 EUR

Mindestbestellmenge: 12

IAUC60N06S5N074ATMA1

Infineon Technologies

SP005423477

Produkt ist nicht verfügbar

IAUC60N06S5N074ATMA1

Infineon Technologies

MOSFET MOSFET_)40V 60V)

Produkt ist nicht verfügbar

IAUC60N10S5L110ATMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: PG-TDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 50 V

Produkt ist nicht verfügbar

IAUC60N10S5L110ATMA1

Infineon Technologies

SP005422122

Produkt ist nicht verfügbar

IAUC60N10S5L110ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

Produkt ist nicht verfügbar

IAUC60N10S5L110ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 240A; 88W
Mounting: SMD
Drain-source voltage: 100V
Drain current: 42A
On-state resistance: 15.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 88W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 24.1nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: PG-TDSON-8

Produkt ist nicht verfügbar

IAUC60N10S5L110ATMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: PG-TDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 50 V

auf Bestellung 3694 Stücke:

Lieferzeit 21-28 Tag (e)

9+	3.17 EUR
11+	2.6 EUR
100+	2.02 EUR
500+	1.71 EUR
1000+	1.39 EUR
2000+	1.31 EUR

Mindestbestellmenge: 9

IAUC60N10S5L110ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 240A; 88W
Mounting: SMD
Drain-source voltage: 100V
Drain current: 42A
On-state resistance: 15.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 88W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 24.1nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: PG-TDSON-8
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC64N08S5L075ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

Produkt ist nicht verfügbar

IAUC64N08S5L075ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 256A; 75W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 13A
Pulsed drain current: 256A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUC64N08S5L075ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 256A; 75W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 13A
Pulsed drain current: 256A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC70N08S5N074ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 280A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 47A
Pulsed drain current: 280A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC70N08S5N074ATMA1

Description: INFINEON - IAUC70N08S5N074ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 70 A, 0.0066 ohm, PG-TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80
rohsCompliant: YES
Dauer-Drainstrom Id: 70
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Verlustleistung Pd: 83
Gate-Source-Schwellenspannung, max.: 3
euEccn: NLR
Verlustleistung: 83
Bauform - Transistor: PG-TDSON
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: OptiMOS-5
productTraceability: No
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0066
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.0066
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 2390 Stücke:

Lieferzeit 14-21 Tag (e)

IAUC70N08S5N074ATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 70A 8TDSON-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 36µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IAUC70N08S5N074ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 370 Stücke:

Lieferzeit 14-28 Tag (e)

14+	3.85 EUR
17+	3.17 EUR
100+	2.47 EUR
500+	2.08 EUR
1000+	1.59 EUR
5000+	1.52 EUR
10000+	1.51 EUR

Mindestbestellmenge: 14

IAUC70N08S5N074ATMA1

Description: INFINEON - IAUC70N08S5N074ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 70 A, 0.0066 ohm, PG-TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80
rohsCompliant: YES
Dauer-Drainstrom Id: 70
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Verlustleistung Pd: 83
Gate-Source-Schwellenspannung, max.: 3
euEccn: NLR
Verlustleistung: 83
Bauform - Transistor: PG-TDSON
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: OptiMOS-5
productTraceability: No
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0066
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.0066
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 2390 Stücke:

Lieferzeit 14-21 Tag (e)

IAUC70N08S5N074ATMA1

Infineon Technologies

N Channel Power MOSFET

Produkt ist nicht verfügbar

IAUC70N08S5N074ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 280A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 47A
Pulsed drain current: 280A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUC70N08S5N074ATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 70A 8TDSON-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 36µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 6915 Stücke:

Lieferzeit 21-28 Tag (e)

7+	3.82 EUR
10+	3.13 EUR
100+	2.43 EUR
500+	2.06 EUR
1000+	1.68 EUR
2000+	1.58 EUR

Mindestbestellmenge: 7

IAUC80N04S6L032ATMA1

Infineon Technologies

Description: IAUC80N04S6L032ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.29mOhm @ 40A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 18µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 7232 Stücke:

Lieferzeit 21-28 Tag (e)

13+	2.13 EUR
15+	1.74 EUR
100+	1.36 EUR
500+	1.15 EUR
1000+	0.94 EUR
2000+	0.88 EUR

Mindestbestellmenge: 13

IAUC80N04S6L032ATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 5000 Stücke:

Lieferzeit 14-28 Tag (e)

25+	2.15 EUR
30+	1.76 EUR
100+	1.37 EUR
500+	1.16 EUR
1000+	0.89 EUR
5000+	0.85 EUR
10000+	0.84 EUR

Mindestbestellmenge: 25

IAUC80N04S6L032ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 80A Automotive 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC80N04S6L032ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 66A; Idm: 320A; 50W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 66A
Pulsed drain current: 320A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUC80N04S6L032ATMA1

Infineon Technologies

Description: IAUC80N04S6L032ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.29mOhm @ 40A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 18µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	0.84 EUR

Mindestbestellmenge: 5000

IAUC80N04S6L032ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 66A; Idm: 320A; 50W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 66A
Pulsed drain current: 320A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC80N04S6N036

Infineon Technologies

MOSFET MOSFET_(20V 40V)

Produkt ist nicht verfügbar

IAUC80N04S6N036ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 80A Automotive 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC80N04S6N036ATMA1

Infineon Technologies

Description: IAUC80N04S6N036ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.68mOhm @ 40A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 18µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 2570 Stücke:

Lieferzeit 21-28 Tag (e)

13+	2.13 EUR
15+	1.74 EUR
100+	1.36 EUR
500+	1.15 EUR
1000+	0.94 EUR
2000+	0.88 EUR

Mindestbestellmenge: 13

IAUC80N04S6N036ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 80A Automotive AEC-Q101 8-Pin TDSON EP T/R

auf Bestellung 5000 Stücke:

Lieferzeit 14-21 Tag (e)

100+	1.57 EUR
118+	1.29 EUR
137+	1.06 EUR
200+	0.97 EUR
500+	0.87 EUR
1000+	0.78 EUR
5000+	0.66 EUR

Mindestbestellmenge: 100

IAUC80N04S6N036ATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 3486 Stücke:

Lieferzeit 14-28 Tag (e)

25+	2.13 EUR
32+	1.65 EUR
100+	1.34 EUR
500+	1.16 EUR
1000+	0.89 EUR
5000+	0.85 EUR

Mindestbestellmenge: 25

IAUC80N04S6N036ATMA1

Description: INFINEON - IAUC80N04S6N036ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 80 A, 0.00282 ohm, PG-TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 80A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.6V
euEccn: NLR
Verlustleistung: 50W
Bauform - Transistor: PG-TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 6
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.00282ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 4850 Stücke:

Lieferzeit 14-21 Tag (e)

IAUC80N04S6N036ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 80A Automotive AEC-Q101 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC80N04S6N036ATMA1

Infineon Technologies

Description: IAUC80N04S6N036ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.68mOhm @ 40A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 18µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IAUC80N04S6N036ATMA1

Description: INFINEON - IAUC80N04S6N036ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 80 A, 0.00282 ohm, PG-TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 80A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 50W
Gate-Source-Schwellenspannung, max.: 2.6V
euEccn: NLR
Verlustleistung: 50W
Bauform - Transistor: PG-TDSON
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 6
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.00282ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.00282ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 4850 Stücke:

Lieferzeit 14-21 Tag (e)

IAUC80N04S6N036ATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 80A Automotive AEC-Q101 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC90N10S5N062ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 66A; Idm: 360A; 115W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 66A
Pulsed drain current: 360A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUC90N10S5N062ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 3938 Stücke:

Lieferzeit 14-28 Tag (e)

11+	5.1 EUR
13+	4.26 EUR
100+	3.38 EUR
250+	3.12 EUR
500+	2.83 EUR
1000+	2.42 EUR
2500+	2.3 EUR

Mindestbestellmenge: 11

IAUC90N10S5N062ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 66A; Idm: 360A; 115W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 66A
Pulsed drain current: 360A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUC90N10S5N062ATMA1

Infineon Technologies

Description: MOSFET N-CH 100V 90A TDSON-8-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 45A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 59µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3275 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 7971 Stücke:

Lieferzeit 21-28 Tag (e)

6+	5.15 EUR
10+	4.27 EUR
100+	3.4 EUR
500+	2.87 EUR
1000+	2.44 EUR
2000+	2.32 EUR

Mindestbestellmenge: 6

IAUC90N10S5N062ATMA1

Infineon Technologies

Trans MOSFET N-CH 100V 90A Automotive 8-Pin TDSON EP T/R

Produkt ist nicht verfügbar

IAUC90N10S5N062ATMA1

Infineon Technologies

Description: MOSFET N-CH 100V 90A TDSON-8-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 45A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 59µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3275 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	2.23 EUR

Mindestbestellmenge: 5000

IAUCN04S6N007T

Infineon Technologies

IAUCN04S6N007T

Produkt ist nicht verfügbar

IAUCN04S6N007TATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 2000 Stücke:

Lieferzeit 14-28 Tag (e)

8+	7.12 EUR
10+	6.01 EUR
25+	5.67 EUR
100+	4.84 EUR
250+	4.58 EUR
500+	4.32 EUR
1000+	3.67 EUR

Mindestbestellmenge: 8

IAUCN04S6N007TATMA1

Infineon Technologies

MOSFET_(20V,40V)

Produkt ist nicht verfügbar

IAUCN04S6N009TATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 1697 Stücke:

Lieferzeit 14-28 Tag (e)

8+	6.89 EUR
10+	5.72 EUR
100+	4.58 EUR
250+	4.21 EUR
500+	3.82 EUR
1000+	3.28 EUR
2000+	3.09 EUR

Mindestbestellmenge: 8

IAUCN04S6N009TATMA1

Infineon Technologies

SP005562109

Produkt ist nicht verfügbar

IAUCN04S6N013T

Infineon Technologies

IAUCN04S6N013T

Produkt ist nicht verfügbar

IAUCN04S6N013TATMA1

Infineon Technologies

Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.32mOhm @ 60A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IAUCN04S6N013TATMA1

Infineon Technologies

MOSFET_(20V,40V)

Produkt ist nicht verfügbar

IAUCN04S6N013TATMA1

Infineon Technologies

Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.32mOhm @ 60A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IAUCN04S6N013TATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 1980 Stücke:

Lieferzeit 14-28 Tag (e)

10+	5.41 EUR
12+	4.52 EUR
100+	3.59 EUR
250+	3.3 EUR
500+	2.99 EUR
1000+	2.56 EUR
2000+	2.44 EUR

Mindestbestellmenge: 10

IAUCN04S6N017TATMA1

Infineon Technologies

Trans MOSFET N-CH 40V 200A 10-Pin LHDSO EP T/R Automotive AEC-Q101

Produkt ist nicht verfügbar

IAUCN04S6N017TATMA1

Infineon Technologies

Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 60A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 3V @ 40µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IAUCN04S6N017TATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 1975 Stücke:

Lieferzeit 14-28 Tag (e)

12+	4.65 EUR
14+	3.9 EUR
100+	3.09 EUR
250+	2.86 EUR
500+	2.59 EUR
1000+	2.23 EUR
2000+	2.11 EUR

Mindestbestellmenge: 12

IAUCN04S6N017TATMA1

Infineon Technologies

Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 60A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 3V @ 40µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 1990 Stücke:

Lieferzeit 21-28 Tag (e)

6+	4.65 EUR
10+	4.18 EUR
25+	3.95 EUR
100+	3.36 EUR
250+	3.16 EUR
500+	2.76 EUR
1000+	2.29 EUR

Mindestbestellmenge: 6

IAUCN04S6N018TATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

Produkt ist nicht verfügbar

IAUCN04S6N018TATMA1

Infineon Technologies

IAUCN04S6N018T

Produkt ist nicht verfügbar

IAUCN04S7L004ATMA1

Infineon Technologies

MOSFET

auf Bestellung 953 Stücke:

Lieferzeit 14-28 Tag (e)

7+	8.03 EUR
10+	6.73 EUR
25+	6.37 EUR
100+	5.43 EUR
250+	5.15 EUR
500+	4.84 EUR
1000+	4.13 EUR

Mindestbestellmenge: 7

IAUCN04S7L005ATMA1

Infineon Technologies

Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 430A (Tj)
Rds On (Max) @ Id, Vgs: 0.52mOhm @ 88A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 95µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 20 V
Qualification: AEC-Q101

auf Bestellung 1000 Stücke:

Lieferzeit 21-28 Tag (e)

5+	6.42 EUR
10+	5.78 EUR
25+	5.46 EUR
100+	4.73 EUR
250+	4.49 EUR
500+	4.03 EUR
1000+	3.4 EUR

Mindestbestellmenge: 5

IAUCN04S7L005ATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 778 Stücke:

Lieferzeit 14-28 Tag (e)

9+	6.45 EUR
10+	5.41 EUR
25+	5.12 EUR
100+	4.37 EUR
250+	4.13 EUR
500+	3.9 EUR
1000+	3.33 EUR

Mindestbestellmenge: 9

IAUCN04S7L005ATMA1

Infineon Technologies

Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 430A (Tj)
Rds On (Max) @ Id, Vgs: 0.52mOhm @ 88A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 95µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 20 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IAUCN04S7L006ATMA1

Infineon Technologies

Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Qualification: AEC-Q101

auf Bestellung 1000 Stücke:

Lieferzeit 21-28 Tag (e)

5+	6.47 EUR
10+	5.81 EUR
25+	5.48 EUR
100+	4.67 EUR
250+	4.39 EUR
500+	3.84 EUR
1000+	3.18 EUR

Mindestbestellmenge: 5

IAUCN04S7L006ATMA1

Infineon Technologies

Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IAUCN04S7L006ATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 994 Stücke:

Lieferzeit 14-28 Tag (e)

8+	6.5 EUR
10+	5.38 EUR
100+	4.32 EUR
250+	3.98 EUR
500+	3.61 EUR
1000+	3.07 EUR
2000+	2.94 EUR

Mindestbestellmenge: 8

IAUCN04S7L009ATMA1

Infineon Technologies

Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 275A (Tj)
Rds On (Max) @ Id, Vgs: 0.91mOhm @ 88A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 60µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5704 pF @ 20 V
Qualification: AEC-Q101

auf Bestellung 980 Stücke:

Lieferzeit 21-28 Tag (e)

6+	4.5 EUR
10+	4.03 EUR
25+	3.8 EUR
100+	3.24 EUR
250+	3.04 EUR
500+	2.66 EUR

Mindestbestellmenge: 6

IAUCN04S7L009ATMA1

Infineon Technologies

Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 275A (Tj)
Rds On (Max) @ Id, Vgs: 0.91mOhm @ 88A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 60µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5704 pF @ 20 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IAUCN04S7L014ATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 900 Stücke:

Lieferzeit 14-28 Tag (e)

16+	3.46 EUR
19+	2.86 EUR
100+	2.23 EUR
500+	1.88 EUR
1000+	1.54 EUR
2000+	1.45 EUR
5000+	1.38 EUR

Mindestbestellmenge: 16

IAUCN04S7L019ATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 970 Stücke:

Lieferzeit 14-28 Tag (e)

18+	2.96 EUR
22+	2.44 EUR
100+	1.92 EUR
500+	1.62 EUR
1000+	1.32 EUR
2000+	1.25 EUR
5000+	1.19 EUR

Mindestbestellmenge: 18

IAUCN04S7L028ATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 480 Stücke:

Lieferzeit 14-28 Tag (e)

22+	2.42 EUR
27+	1.99 EUR
100+	1.54 EUR
500+	1.31 EUR
1000+	1.07 EUR
2000+	1 EUR
5000+	0.95 EUR

Mindestbestellmenge: 22

IAUCN04S7L053DATMA1

Infineon Technologies

MOSFET

Produkt ist nicht verfügbar

IAUCN04S7L053DATMA1

Infineon Technologies

IAUCN04S7L053DATMA1

Produkt ist nicht verfügbar

IAUCN04S7N004ATMA1

Infineon Technologies

Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A
Rds On (Max) @ Id, Vgs: 0.44mOhm @ 88A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 3V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11310 pF @ 20 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IAUCN04S7N004ATMA1

Description: INFINEON - IAUCN04S7N004ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 175 A, 400 µohm, TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 175A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 219W
Bauform - Transistor: TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 7 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 400µohm
SVHC: No SVHC (14-Jun-2023)

auf Bestellung 4980 Stücke:

Lieferzeit 14-21 Tag (e)

IAUCN04S7N004ATMA1

Infineon Technologies

Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A
Rds On (Max) @ Id, Vgs: 0.44mOhm @ 88A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 3V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11310 pF @ 20 V
Qualification: AEC-Q101

auf Bestellung 4311 Stücke:

Lieferzeit 21-28 Tag (e)

4+	7.96 EUR
10+	6.67 EUR
100+	5.39 EUR
500+	4.8 EUR
1000+	4.11 EUR
2000+	3.87 EUR

Mindestbestellmenge: 4

IAUCN04S7N004ATMA1

Infineon Technologies

MOSFET

auf Bestellung 81 Stücke:

Lieferzeit 14-28 Tag (e)

7+	7.98 EUR
10+	6.71 EUR
25+	6.34 EUR
100+	5.41 EUR
250+	5.12 EUR
500+	4.81 EUR
1000+	4.13 EUR

Mindestbestellmenge: 7

IAUCN04S7N004ATMA1

Infineon Technologies

Automotive MOSFET

Produkt ist nicht verfügbar

IAUCN04S7N005ATMA1

Infineon Technologies

Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 88A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3V @ 95µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
Qualification: AEC-Q101

auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	3.09 EUR

Mindestbestellmenge: 5000

IAUCN04S7N005ATMA1

Infineon Technologies

MOSFET

auf Bestellung 19 Stücke:

Lieferzeit 14-28 Tag (e)

8+	7.18 EUR
10+	5.98 EUR
100+	4.76 EUR
250+	4.39 EUR
500+	3.98 EUR
1000+	3.46 EUR
5000+	3.12 EUR

Mindestbestellmenge: 8

IAUCN04S7N005ATMA1

Description: INFINEON - IAUCN04S7N005ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 175 A, 500 µohm, TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 175A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 179W
Bauform - Transistor: TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 7 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 500µohm
SVHC: No SVHC (14-Jun-2023)

auf Bestellung 4685 Stücke:

Lieferzeit 14-21 Tag (e)

IAUCN04S7N005ATMA1

Infineon Technologies

Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 88A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3V @ 95µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
Qualification: AEC-Q101

auf Bestellung 7043 Stücke:

Lieferzeit 21-28 Tag (e)

4+	7.12 EUR
10+	5.92 EUR
100+	4.71 EUR
500+	3.99 EUR
1000+	3.38 EUR
2000+	3.21 EUR

Mindestbestellmenge: 4

IAUCN04S7N006ATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 4990 Stücke:

Lieferzeit 14-28 Tag (e)

8+	6.5 EUR
10+	5.38 EUR
100+	4.32 EUR
250+	3.98 EUR
500+	3.61 EUR
1000+	3.07 EUR
2000+	2.94 EUR

Mindestbestellmenge: 8

IAUCN04S7N006ATMA1

Infineon Technologies

Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Qualification: AEC-Q101

auf Bestellung 931 Stücke:

Lieferzeit 21-28 Tag (e)

5+	6.47 EUR
10+	5.81 EUR
25+	5.48 EUR
100+	4.67 EUR
250+	4.39 EUR
500+	3.84 EUR

Mindestbestellmenge: 5

IAUCN04S7N006ATMA1

Infineon Technologies

Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IAUCN04S7N009ATMA1

Infineon Technologies

Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Qualification: AEC-Q101

auf Bestellung 990 Stücke:

Lieferzeit 21-28 Tag (e)

6+	4.5 EUR
10+	4.03 EUR
25+	3.8 EUR
100+	3.24 EUR
250+	3.04 EUR
500+	2.66 EUR

Mindestbestellmenge: 6

IAUCN04S7N009ATMA1

Infineon Technologies

IAUCN04S7N009ATMA1

Produkt ist nicht verfügbar

IAUCN04S7N009ATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 972 Stücke:

Lieferzeit 14-28 Tag (e)

12+	4.5 EUR
14+	3.74 EUR
100+	2.96 EUR
250+	2.73 EUR
500+	2.49 EUR
1000+	2.14 EUR
2000+	2.04 EUR

Mindestbestellmenge: 12

IAUCN04S7N009ATMA1

Infineon Technologies

Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IAUCN04S7N012ATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 5060 Stücke:

Lieferzeit 14-28 Tag (e)

15+	3.64 EUR
18+	3.02 EUR
100+	2.41 EUR
250+	2.23 EUR
500+	2.02 EUR
1000+	1.73 EUR
2000+	1.64 EUR

Mindestbestellmenge: 15

IAUCN04S7N015ATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 885 Stücke:

Lieferzeit 14-28 Tag (e)

16+	3.46 EUR
19+	2.86 EUR
100+	2.23 EUR
500+	1.88 EUR
1000+	1.54 EUR
2000+	1.45 EUR
5000+	1.38 EUR

Mindestbestellmenge: 16

IAUCN04S7N020ATMA1

Infineon Technologies

IAUCN04S7N020ATMA1

Produkt ist nicht verfügbar

IAUCN04S7N020ATMA1

Infineon Technologies

Automotive MOSFET

Produkt ist nicht verfügbar

IAUCN04S7N020ATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 995 Stücke:

Lieferzeit 14-28 Tag (e)

18+	2.96 EUR
22+	2.44 EUR
100+	1.92 EUR
500+	1.62 EUR
1000+	1.32 EUR
2000+	1.25 EUR
5000+	1.19 EUR

Mindestbestellmenge: 18

IAUCN04S7N020ATMA1

Infineon Technologies

Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Qualification: AEC-Q101

auf Bestellung 990 Stücke:

Lieferzeit 21-28 Tag (e)

9+	2.99 EUR
10+	2.68 EUR
25+	2.54 EUR
100+	2.09 EUR
250+	1.95 EUR
500+	1.72 EUR

Mindestbestellmenge: 9

IAUCN04S7N020ATMA1

Infineon Technologies

Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IAUCN04S7N020DATMA1

Infineon Technologies

Mosfet, package: PG-TDSON-8

Produkt ist nicht verfügbar

IAUCN04S7N030ATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

auf Bestellung 973 Stücke:

Lieferzeit 14-28 Tag (e)

22+	2.42 EUR
27+	1.99 EUR
100+	1.54 EUR
500+	1.31 EUR
1000+	1.07 EUR
2000+	1 EUR
5000+	0.95 EUR

Mindestbestellmenge: 22

IAUCN04S7N040DATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

Produkt ist nicht verfügbar

IAUCN08S7N013ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 4330 Stücke:

Lieferzeit 14-28 Tag (e)

6+	9.65 EUR
10+	8.11 EUR
25+	7.64 EUR
100+	6.55 EUR
250+	6.19 EUR
500+	5.82 EUR
1000+	4.99 EUR

Mindestbestellmenge: 6

IAUCN08S7N013ATMA1

Infineon Technologies

MosFet - PG-TDSON-8

Produkt ist nicht verfügbar

IAUMN04S7N009GATMA1

Infineon Technologies

Power Mosfet Automotive

Produkt ist nicht verfügbar

IAUMN08S5N012GATMA1

Infineon Technologies

SP005730155

Produkt ist nicht verfügbar

IAUS165N08S5N029

Infineon Technologies

MOSFET MOSFET_(75V 120V(

Produkt ist nicht verfügbar

IAUS165N08S5N029ATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 165A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IAUS165N08S5N029ATMA1

Infineon Technologies

Trans MOSFET N-CH 80V 165A Automotive 9-Pin(8+Tab) HSOG T/R

Produkt ist nicht verfügbar

IAUS165N08S5N029ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 921 Stücke:

Lieferzeit 14-28 Tag (e)

7+	8.16 EUR
10+	6.86 EUR
25+	6.45 EUR
100+	5.56 EUR
250+	5.25 EUR
500+	4.94 EUR
1000+	4.24 EUR

Mindestbestellmenge: 7

IAUS165N08S5N029ATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 165A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V
Qualification: AEC-Q101

auf Bestellung 1616 Stücke:

Lieferzeit 21-28 Tag (e)

4+	8.03 EUR
10+	6.74 EUR
100+	5.46 EUR
500+	4.85 EUR

Mindestbestellmenge: 4

IAUS165N08S5N029ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; Idm: 660A; 167W
Case: PG-HSOG-8
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 5
On-state resistance: 2.9mΩ
Pulsed drain current: 660A
Power dissipation: 167W
Gate charge: 31nC
Polarisation: unipolar
Drain current: 165A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V

Produkt ist nicht verfügbar

IAUS165N08S5N029ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; Idm: 660A; 167W
Case: PG-HSOG-8
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 5
On-state resistance: 2.9mΩ
Pulsed drain current: 660A
Power dissipation: 167W
Gate charge: 31nC
Polarisation: unipolar
Drain current: 165A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke

Produkt ist nicht verfügbar

IAUS180N04S4N015ATMA1

Infineon Technologies

N-channel - Enhancement mode MOSFET

Produkt ist nicht verfügbar

IAUS180N04S4N015ATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

Produkt ist nicht verfügbar

IAUS200N08S5N023

Infineon Technologies

MOSFET MOSFET_(75V 120V(

Produkt ist nicht verfügbar

IAUS200N08S5N023ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 1538 Stücke:

Lieferzeit 14-28 Tag (e)

6+	9.02 EUR
10+	7.57 EUR
25+	7.2 EUR
100+	6.11 EUR
250+	5.77 EUR
500+	5.43 EUR
1000+	4.65 EUR

Mindestbestellmenge: 6

IAUS200N08S5N023ATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 200A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IAUS200N08S5N023ATMA1

Infineon Technologies

OptiMOS Power-Transistor

Produkt ist nicht verfügbar

IAUS200N08S5N023ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 148A; Idm: 800A; 200W
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Kind of package: reel; tape
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 800A
Mounting: SMD
Case: PG-HSOG-8
Drain-source voltage: 80V
Drain current: 148A
On-state resistance: 2.3mΩ

Produkt ist nicht verfügbar

IAUS200N08S5N023ATMA1

Description: INFINEON - IAUS200N08S5N023ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 200 A, 0.0018 ohm, PG-HSOG, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 200A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 200W
Bauform - Transistor: PG-HSOG
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS-5
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0018ohm

auf Bestellung 1585 Stücke:

Lieferzeit 14-21 Tag (e)

IAUS200N08S5N023ATMA1

Infineon Technologies

OptiMOS Power-Transistor Automotive AEC-Q101

auf Bestellung 3600 Stücke:

Lieferzeit 14-21 Tag (e)

1800+	3.51 EUR

Mindestbestellmenge: 1800

IAUS200N08S5N023ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 148A; Idm: 800A; 200W
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Kind of package: reel; tape
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 800A
Mounting: SMD
Case: PG-HSOG-8
Drain-source voltage: 80V
Drain current: 148A
On-state resistance: 2.3mΩ
Anzahl je Verpackung: 1800 Stücke

Produkt ist nicht verfügbar

IAUS200N08S5N023ATMA1

Infineon Technologies

OptiMOS Power-Transistor Automotive AEC-Q101

Produkt ist nicht verfügbar

IAUS200N08S5N023ATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 200A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
Qualification: AEC-Q101

auf Bestellung 512 Stücke:

Lieferzeit 21-28 Tag (e)

3+	8.97 EUR
10+	7.53 EUR
100+	6.09 EUR
500+	5.41 EUR

Mindestbestellmenge: 3

IAUS200N08S5N023ATMA1

Description: INFINEON - IAUS200N08S5N023ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 200 A, 0.0018 ohm, PG-HSOG, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 200A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Verlustleistung Pd: 200W
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 200W
Bauform - Transistor: PG-HSOG
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS-5
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0018ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0018ohm

auf Bestellung 1585 Stücke:

Lieferzeit 14-21 Tag (e)

IAUS200N08S5N023ATMA1 транзистор
Produktcode: 197348

Transistoren > MOSFET N-CH

Produkt ist nicht verfügbar

IAUS240N08S5N019ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 173A; Idm: 960A; 230W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 173A
Pulsed drain current: 960A
Power dissipation: 230W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1800 Stücke

Produkt ist nicht verfügbar

IAUS240N08S5N019ATMA1

Description: INFINEON - IAUS240N08S5N019ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 240 A, 0.0015 ohm, PG-HSOG, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 240A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 230W
Bauform - Transistor: PG-HSOG
Anzahl der Pins: 8Pins
Produktpalette: OptiMOS-5
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0015ohm

auf Bestellung 1640 Stücke:

Lieferzeit 14-21 Tag (e)

IAUS240N08S5N019ATMA1

Infineon Technologies

Trans MOSFET N-CH 80V 240A Automotive AEC-Q101 9-Pin(8+Tab) HSOG T/R

auf Bestellung 3600 Stücke:

Lieferzeit 14-21 Tag (e)

1800+	4.02 EUR

Mindestbestellmenge: 1800

IAUS240N08S5N019ATMA1

Infineon Technologies

Trans MOSFET N-CH 80V 240A Automotive AEC-Q101 9-Pin(8+Tab) HSOG T/R

Produkt ist nicht verfügbar

IAUS240N08S5N019ATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 240A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 160µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9264 pF @ 40 V
Qualification: AEC-Q101

auf Bestellung 1800 Stücke:

Lieferzeit 21-28 Tag (e)

1800+	5.31 EUR

Mindestbestellmenge: 1800

IAUS240N08S5N019ATMA1

Description: INFINEON - IAUS240N08S5N019ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 240 A, 0.0015 ohm, PG-HSOG, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 240A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Verlustleistung Pd: 230W
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 230W
Bauform - Transistor: PG-HSOG
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pins
Produktpalette: OptiMOS-5
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0015ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0015ohm

auf Bestellung 1640 Stücke:

Lieferzeit 14-21 Tag (e)

IAUS240N08S5N019ATMA1

Infineon Technologies

Trans MOSFET N-CH 80V 240A Automotive AEC-Q101 9-Pin(8+Tab) HSOG T/R

auf Bestellung 1800 Stücke:

Lieferzeit 14-21 Tag (e)

16+	10.08 EUR
19+	8.22 EUR
50+	6.03 EUR
200+	5.44 EUR
500+	4.59 EUR
1000+	4.29 EUR
1800+	4.01 EUR

Mindestbestellmenge: 16

IAUS240N08S5N019ATMA1

Infineon Technologies

Trans MOSFET N-CH 80V 240A Automotive AEC-Q101 9-Pin(8+Tab) HSOG T/R

auf Bestellung 1800 Stücke:

Lieferzeit 14-21 Tag (e)

1800+	4.86 EUR

Mindestbestellmenge: 1800

IAUS240N08S5N019ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 373 Stücke:

Lieferzeit 14-28 Tag (e)

6+	10.35 EUR
10+	8.68 EUR
100+	7.05 EUR
500+	6.27 EUR
1000+	5.64 EUR
1800+	5.62 EUR

Mindestbestellmenge: 6

IAUS240N08S5N019ATMA1

Infineon Technologies

SP001792360

auf Bestellung 1800 Stücke:

Lieferzeit 14-21 Tag (e)

IAUS240N08S5N019ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 173A; Idm: 960A; 230W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 173A
Pulsed drain current: 960A
Power dissipation: 230W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUS240N08S5N019ATMA1

Infineon Technologies

Trans MOSFET N-CH 80V 240A Automotive AEC-Q101 9-Pin(8+Tab) HSOG T/R

Produkt ist nicht verfügbar

IAUS240N08S5N019ATMA1

Infineon Technologies

Trans MOSFET N-CH 80V 240A Automotive AEC-Q101 9-Pin(8+Tab) HSOG T/R

auf Bestellung 1800 Stücke:

Lieferzeit 14-21 Tag (e)

1800+	4.59 EUR

Mindestbestellmenge: 1800

IAUS240N08S5N019ATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 240A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 160µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9264 pF @ 40 V
Qualification: AEC-Q101

auf Bestellung 2516 Stücke:

Lieferzeit 21-28 Tag (e)

3+	10.24 EUR
10+	8.62 EUR
100+	6.97 EUR
500+	6.2 EUR

Mindestbestellmenge: 3

IAUS260N10S5N019TATMA1

Infineon Technologies

MOSFET

Produkt ist nicht verfügbar

IAUS260N10S5N019TATMA1

Infineon Technologies

Description: MOSFET N-CH 100V 260A HDSOP-16-2
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tj)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 210µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V

auf Bestellung 3797 Stücke:

Lieferzeit 21-28 Tag (e)

2+	15.52 EUR
10+	13.31 EUR
100+	11.09 EUR
500+	9.79 EUR

Mindestbestellmenge: 2

IAUS260N10S5N019TATMA1

Description: INFINEON - IAUS260N10S5N019TATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 260 A, 0.0016 ohm, HDSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 260A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Verlustleistung Pd: 300W
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: HDSOP
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 16Pin(s)
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0016ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0016ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 2186 Stücke:

Lieferzeit 14-21 Tag (e)

IAUS260N10S5N019TATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 10028 Stücke:

Lieferzeit 14-28 Tag (e)

4+	15.39 EUR
10+	13.21 EUR
25+	12.77 EUR
100+	11 EUR
250+	10.97 EUR
500+	9.72 EUR
1000+	9.28 EUR

Mindestbestellmenge: 4

IAUS260N10S5N019TATMA1

Infineon Technologies

SP002952334

Produkt ist nicht verfügbar

IAUS260N10S5N019TATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 91A; Idm: 995A; 300W
Case: PG-HDSOP-16
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 166nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 995A
Drain-source voltage: 100V
Drain current: 91A
On-state resistance: 2.6mΩ

Produkt ist nicht verfügbar

IAUS260N10S5N019TATMA1

Infineon Technologies

MOSFET

Produkt ist nicht verfügbar

IAUS260N10S5N019TATMA1

Infineon Technologies

Description: MOSFET N-CH 100V 260A HDSOP-16-2
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tj)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 210µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V

auf Bestellung 1800 Stücke:

Lieferzeit 21-28 Tag (e)

1800+	8.81 EUR

Mindestbestellmenge: 1800

IAUS260N10S5N019TATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 91A; Idm: 995A; 300W
Case: PG-HDSOP-16
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 166nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 995A
Drain-source voltage: 100V
Drain current: 91A
On-state resistance: 2.6mΩ
Anzahl je Verpackung: 1800 Stücke

Produkt ist nicht verfügbar

IAUS260N10S5N019TATMA1

Description: INFINEON - IAUS260N10S5N019TATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 260 A, 0.0016 ohm, HDSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 260A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: HDSOP
Anzahl der Pins: 16Pin(s)
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0016ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 2186 Stücke:

Lieferzeit 14-21 Tag (e)

IAUS300N04S4N007ATMA1

Infineon Technologies

N-channel - Enhancement mode MOSFET

Produkt ist nicht verfügbar

IAUS300N04S4N007ATMA1

Infineon Technologies

N-channel - Enhancement mode MOSFET Automotive AEC-Q101

Produkt ist nicht verfügbar

IAUS300N04S4N007ATMA1

Infineon Technologies

Description: MOSFET_(20V 40V) PG-HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 342 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27356 pF @ 25 V

Produkt ist nicht verfügbar

IAUS300N04S4N007ATMA1

Infineon Technologies

MOSFET MOSFET_(20V 40V)

Produkt ist nicht verfügbar

IAUS300N08S5N011ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 1505A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 52A
Pulsed drain current: 1505A
Power dissipation: 375W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 231nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUS300N08S5N011ATMA1

Infineon Technologies

Automotive AEC-Q101 Power Mosfet

auf Bestellung 12600 Stücke:

Lieferzeit 14-21 Tag (e)

1800+	6.18 EUR

Mindestbestellmenge: 1800

IAUS300N08S5N011ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 1505A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 52A
Pulsed drain current: 1505A
Power dissipation: 375W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 231nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1800 Stücke

Produkt ist nicht verfügbar

IAUS300N08S5N011ATMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 410A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V

Produkt ist nicht verfügbar

IAUS300N08S5N011ATMA1

Infineon Technologies

Automotive AEC-Q101 Power Mosfet

Produkt ist nicht verfügbar

IAUS300N08S5N011ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

Produkt ist nicht verfügbar

IAUS300N08S5N011ATMA1

Infineon Technologies

SP005427388

Produkt ist nicht verfügbar

IAUS300N08S5N011ATMA1

Infineon Technologies

Automotive AEC-Q101 Power Mosfet

Produkt ist nicht verfügbar

IAUS300N08S5N011TATMA1

Infineon Technologies

OptiMOS-5 Power-Transistor Automotive AEC-Q101

auf Bestellung 19800 Stücke:

Lieferzeit 14-21 Tag (e)

1800+	7.59 EUR

Mindestbestellmenge: 1800

IAUS300N08S5N011TATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 1697 Stücke:

Lieferzeit 14-28 Tag (e)

3+	17.55 EUR
10+	15.03 EUR
25+	14.27 EUR
100+	12.56 EUR
250+	12.14 EUR
500+	11.08 EUR
1000+	10.35 EUR

Mindestbestellmenge: 3

IAUS300N08S5N011TATMA1

Infineon Technologies

OptiMOS-5 Power-Transistor Automotive AEC-Q101

Produkt ist nicht verfügbar

IAUS300N08S5N011TATMA1

Infineon Technologies

OptiMOS-5 Power-Transistor

Produkt ist nicht verfügbar

IAUS300N08S5N011TATMA1

Description: INFINEON - IAUS300N08S5N011TATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 300 A, 0.001 ohm, HDSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 300A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Verlustleistung Pd: 375W
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 375W
Bauform - Transistor: HDSOP
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 16Pin(s)
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.001ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.001ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 4746 Stücke:

Lieferzeit 14-21 Tag (e)

IAUS300N08S5N011TATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 300A HDSOP-16-2
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V

auf Bestellung 2456 Stücke:

Lieferzeit 21-28 Tag (e)

2+	17.42 EUR
10+	14.93 EUR
100+	12.44 EUR
500+	10.98 EUR

Mindestbestellmenge: 2

IAUS300N08S5N011TATMA1

Infineon Technologies

OptiMOS-5 Power-Transistor Automotive AEC-Q101

Produkt ist nicht verfügbar

IAUS300N08S5N011TATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 1450A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 123A
Pulsed drain current: 1450A
Power dissipation: 375W
Case: PG-HDSOP-16
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 231nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUS300N08S5N011TATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 1450A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 123A
Pulsed drain current: 1450A
Power dissipation: 375W
Case: PG-HDSOP-16
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 231nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1800 Stücke

Produkt ist nicht verfügbar

IAUS300N08S5N011TATMA1

Description: INFINEON - IAUS300N08S5N011TATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 300 A, 0.001 ohm, HDSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 300A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 375W
Bauform - Transistor: HDSOP
Anzahl der Pins: 16Pin(s)
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.001ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 4746 Stücke:

Lieferzeit 14-21 Tag (e)

IAUS300N08S5N011TATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 300A HDSOP-16-2
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V

auf Bestellung 1800 Stücke:

Lieferzeit 21-28 Tag (e)

1800+	9.88 EUR

Mindestbestellmenge: 1800

IAUS300N08S5N012ATMA1

Infineon Technologies

IAUS300N08S5N012ATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 80V 300A Automotive 9-Pin(8+Tab) HSOG T/R - Arrow.com

auf Bestellung 216 Stücke:

Lieferzeit 14-21 Tag (e)

17+	9.48 EUR
20+	7.71 EUR
25+	7.02 EUR
100+	5.79 EUR

Mindestbestellmenge: 17

IAUS300N08S5N012ATMA1

Description: INFINEON - IAUS300N08S5N012ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 300 A, 0.001 ohm, HSOG, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 300A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 375W
Bauform - Transistor: HSOG
Anzahl der Pins: 8Pins
Produktpalette: OptiMOS-5
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.001ohm

auf Bestellung 1752 Stücke:

Lieferzeit 14-21 Tag (e)

IAUS300N08S5N012ATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 300A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Qualification: AEC-Q101

auf Bestellung 1800 Stücke:

Lieferzeit 21-28 Tag (e)

1800+	7.83 EUR

Mindestbestellmenge: 1800

IAUS300N08S5N012ATMA1

Infineon Technologies

IAUS300N08S5N012ATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 80V 300A Automotive 9-Pin(8+Tab) HSOG T/R - Arrow.com

auf Bestellung 216 Stücke:

Lieferzeit 14-21 Tag (e)

17+	9.48 EUR
20+	7.71 EUR
25+	7.02 EUR
100+	5.79 EUR

Mindestbestellmenge: 17

IAUS300N08S5N012ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; Idm: 1.2kA; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUS300N08S5N012ATMA1

Infineon Technologies

IAUS300N08S5N012ATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 80V 300A Automotive 9-Pin(8+Tab) HSOG T/R - Arrow.com

auf Bestellung 5400 Stücke:

Lieferzeit 14-21 Tag (e)

1800+	5.77 EUR

Mindestbestellmenge: 1800

IAUS300N08S5N012ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; Idm: 1.2kA; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1800 Stücke

Produkt ist nicht verfügbar

IAUS300N08S5N012ATMA1

Infineon Technologies

IAUS300N08S5N012ATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 80V 300A Automotive 9-Pin(8+Tab) HSOG T/R - Arrow.com

Produkt ist nicht verfügbar

IAUS300N08S5N012ATMA1

Description: INFINEON - IAUS300N08S5N012ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 300 A, 0.001 ohm, HSOG, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 300A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 375W
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 375W
Bauform - Transistor: HSOG
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pins
Produktpalette: OptiMOS-5
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.001ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.001ohm

auf Bestellung 1752 Stücke:

Lieferzeit 14-21 Tag (e)

IAUS300N08S5N012ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 44 Stücke:

Lieferzeit 14-28 Tag (e)

4+	14.85 EUR
10+	12.45 EUR
100+	10.09 EUR
500+	8.94 EUR
1800+	7.67 EUR

Mindestbestellmenge: 4

IAUS300N08S5N012ATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 300A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Qualification: AEC-Q101

auf Bestellung 2485 Stücke:

Lieferzeit 21-28 Tag (e)

2+	15.13 EUR
10+	12.71 EUR
100+	10.28 EUR
500+	9.14 EUR

Mindestbestellmenge: 2

IAUS300N08S5N012ATMA1

Infineon Technologies

IAUS300N08S5N012ATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 80V 300A Automotive 9-Pin(8+Tab) HSOG T/R - Arrow.com

auf Bestellung 1800 Stücke:

Lieferzeit 14-21 Tag (e)

13+	12.21 EUR
18+	8.57 EUR
50+	7.33 EUR
100+	6.62 EUR
200+	5.98 EUR
500+	5.35 EUR
1000+	4.81 EUR

Mindestbestellmenge: 13

IAUS300N08S5N012ATMA1

Infineon Technologies

Trans MOSFET N-CH 80V 300A Automotive 9-Pin(8+Tab) HSOG T/R

Produkt ist nicht verfügbar

IAUS300N08S5N012TATMA1

Description: INFINEON - IAUS300N08S5N012TATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 300 A, 0.001 ohm, HDSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 300A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 375W
Bauform - Transistor: HDSOP
Anzahl der Pins: 16Pin(s)
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.001ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 3433 Stücke:

Lieferzeit 14-21 Tag (e)

IAUS300N08S5N012TATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 6253 Stücke:

Lieferzeit 14-28 Tag (e)

4+	16.54 EUR
10+	14.25 EUR
25+	14.2 EUR
100+	11.88 EUR
250+	11.83 EUR
500+	10.48 EUR
1000+	10.45 EUR

Mindestbestellmenge: 4

IAUS300N08S5N012TATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 300A HDSOP-16-2
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V

Produkt ist nicht verfügbar

IAUS300N08S5N012TATMA1

Infineon Technologies

Trans MOSFET N-CH 80V 400A Automotive AEC-Q101 16-Pin HDSOP EP T/R

Produkt ist nicht verfügbar

IAUS300N08S5N012TATMA1

Infineon Technologies

Trans MOSFET N-CH 80V 400A Automotive 16-Pin HDSOP EP T/R

Produkt ist nicht verfügbar

IAUS300N08S5N012TATMA1

Infineon Technologies

Trans MOSFET N-CH 80V 400A Automotive AEC-Q101 16-Pin HDSOP EP T/R

Produkt ist nicht verfügbar

IAUS300N08S5N012TATMA1

Description: INFINEON - IAUS300N08S5N012TATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 300 A, 0.001 ohm, HDSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 300A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Verlustleistung Pd: 375W
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 375W
Bauform - Transistor: HDSOP
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 16Pin(s)
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.001ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.001ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 3433 Stücke:

Lieferzeit 14-21 Tag (e)

IAUS300N08S5N012TATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 300A HDSOP-16-2
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V

Produkt ist nicht verfügbar

IAUS300N08S5N014ATMA1

Infineon Technologies

Automotive AEC-Q101 Power Mosfet

auf Bestellung 3600 Stücke:

Lieferzeit 14-21 Tag (e)

1800+	4.88 EUR

Mindestbestellmenge: 1800

IAUS300N08S5N014ATMA1

Description: INFINEON - IAUS300N08S5N014ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 300 A, 0.0011 ohm, HSOG, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 300A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 300W
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: HSOG
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pins
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0011ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0011ohm

auf Bestellung 3574 Stücke:

Lieferzeit 14-21 Tag (e)

IAUS300N08S5N014ATMA1

Infineon Technologies

SP001792358

Produkt ist nicht verfügbar

IAUS300N08S5N014ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 230A; Idm: 1.2kA; 300W
Mounting: SMD
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HSOG-8
On-state resistance: 1.4mΩ
Pulsed drain current: 1.2kA
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 230A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1800 Stücke

Produkt ist nicht verfügbar

IAUS300N08S5N014ATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 300A HSOG-8

Produkt ist nicht verfügbar

IAUS300N08S5N014ATMA1

Infineon Technologies

Automotive AEC-Q101 Power Mosfet

Produkt ist nicht verfügbar

IAUS300N08S5N014ATMA1

Description: INFINEON - IAUS300N08S5N014ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 300 A, 0.0011 ohm, HSOG, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 300A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: HSOG
Anzahl der Pins: 8Pins
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0011ohm

auf Bestellung 3574 Stücke:

Lieferzeit 14-21 Tag (e)

IAUS300N08S5N014ATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 300A HSOG-8

Produkt ist nicht verfügbar

IAUS300N08S5N014ATMA1

Infineon Technologies

Automotive AEC-Q101 Power Mosfet

Produkt ist nicht verfügbar

IAUS300N08S5N014ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 230A; Idm: 1.2kA; 300W
Mounting: SMD
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HSOG-8
On-state resistance: 1.4mΩ
Pulsed drain current: 1.2kA
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 230A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET

Produkt ist nicht verfügbar

IAUS300N08S5N014ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

Produkt ist nicht verfügbar

IAUS300N08S5N014TATMA1

Description: INFINEON - IAUS300N08S5N014TATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 300 A, 0.0012 ohm, HDSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 300A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Verlustleistung Pd: 300W
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: HDSOP
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 16Pin(s)
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0012ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0012ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 1175 Stücke:

Lieferzeit 14-21 Tag (e)

IAUS300N08S5N014TATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 300A HDSOP-16-2
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13178 pF @ 40 V

auf Bestellung 2266 Stücke:

Lieferzeit 21-28 Tag (e)

2+	15.83 EUR
10+	13.3 EUR
100+	10.76 EUR
500+	9.56 EUR

Mindestbestellmenge: 2

IAUS300N08S5N014TATMA1

Infineon Technologies

Automotive AEC-Q101 Power Mosfet

Produkt ist nicht verfügbar

IAUS300N08S5N014TATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 1186A; 300W
Mounting: SMD
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HDSOP-16
On-state resistance: 2.1mΩ
Pulsed drain current: 1186A
Power dissipation: 300W
Gate charge: 187nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 108A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET

Produkt ist nicht verfügbar

IAUS300N08S5N014TATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 587 Stücke:

Lieferzeit 14-28 Tag (e)

4+	15.96 EUR
10+	13.39 EUR
25+	13.18 EUR
100+	10.87 EUR
250+	10.66 EUR
500+	9.65 EUR
1000+	9.41 EUR

Mindestbestellmenge: 4

IAUS300N08S5N014TATMA1

Description: INFINEON - IAUS300N08S5N014TATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 300 A, 0.0012 ohm, HDSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 300A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: HDSOP
Anzahl der Pins: 16Pin(s)
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0012ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 1175 Stücke:

Lieferzeit 14-21 Tag (e)

IAUS300N08S5N014TATMA1

Infineon Technologies

SP002952338

Produkt ist nicht verfügbar

IAUS300N08S5N014TATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 1186A; 300W
Mounting: SMD
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HDSOP-16
On-state resistance: 2.1mΩ
Pulsed drain current: 1186A
Power dissipation: 300W
Gate charge: 187nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 108A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1800 Stücke

Produkt ist nicht verfügbar

IAUS300N08S5N014TATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 300A HDSOP-16-2
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13178 pF @ 40 V

auf Bestellung 1800 Stücke:

Lieferzeit 21-28 Tag (e)

1800+	8.19 EUR

Mindestbestellmenge: 1800

IAUS300N08S5N014TATMA1

Infineon Technologies

Automotive AEC-Q101 Power Mosfet

auf Bestellung 19800 Stücke:

Lieferzeit 14-21 Tag (e)

1800+	6.2 EUR

Mindestbestellmenge: 1800

IAUS300N08S5N014TATMA1

Infineon Technologies

Automotive AEC-Q101 Power Mosfet

Produkt ist nicht verfügbar

IAUS300N10S5N014ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 1315A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 1315A
Power dissipation: 375W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 216nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUS300N10S5N014ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

Produkt ist nicht verfügbar

IAUS300N10S5N014ATMA1

Infineon Technologies

SP005423088

Produkt ist nicht verfügbar

IAUS300N10S5N014ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 1315A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 1315A
Power dissipation: 375W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 216nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1800 Stücke

Produkt ist nicht verfügbar

IAUS300N10S5N014ATMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tj)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V

auf Bestellung 1598 Stücke:

Lieferzeit 21-28 Tag (e)

2+	16.35 EUR
10+	13.72 EUR
100+	11.1 EUR
500+	9.87 EUR

Mindestbestellmenge: 2

IAUS300N10S5N014ATMA1

Infineon Technologies

Automotive AEC-Q101 Power Mosfet

Produkt ist nicht verfügbar

IAUS300N10S5N014ATMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tj)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V

Produkt ist nicht verfügbar

IAUS300N10S5N015TATMA1

Infineon Technologies

Description: MOSFET N-CH 100V 300A HDSOP-16-2
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V

Produkt ist nicht verfügbar

IAUS300N10S5N015TATMA1

Infineon Technologies

Trans MOSFET N-CH 100V 350A Automotive AEC-Q101 16-Pin HDSOP EP T/R

auf Bestellung 10800 Stücke:

Lieferzeit 14-21 Tag (e)

1800+	7.39 EUR

Mindestbestellmenge: 1800

IAUS300N10S5N015TATMA1

Infineon Technologies

Trans MOSFET N-CH 100V 350A Automotive AEC-Q101 16-Pin HDSOP EP T/R

Produkt ist nicht verfügbar

IAUS300N10S5N015TATMA1

Description: INFINEON - IAUS300N10S5N015TATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 300 A, 0.0013 ohm, HDSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 300A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Verlustleistung Pd: 375W
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 375W
Bauform - Transistor: HDSOP
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 16Pin(s)
Produktpalette: OptiMOS 5
productTraceability: No
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0013ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0013ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 2075 Stücke:

Lieferzeit 14-21 Tag (e)

IAUS300N10S5N015TATMA1

Infineon Technologies

Description: MOSFET N-CH 100V 300A HDSOP-16-2
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V

auf Bestellung 1339 Stücke:

Lieferzeit 21-28 Tag (e)

2+	16.95 EUR
10+	14.53 EUR
100+	12.11 EUR
500+	10.69 EUR

Mindestbestellmenge: 2

IAUS300N10S5N015TATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 1606 Stücke:

Lieferzeit 14-28 Tag (e)

4+	15.73 EUR
10+	13.99 EUR
100+	12.22 EUR
250+	12.14 EUR
500+	10.79 EUR
1000+	10.66 EUR
1800+	9.67 EUR

Mindestbestellmenge: 4

IAUS300N10S5N015TATMA1

Infineon Technologies

Trans MOSFET N-CH 100V 350A Automotive AEC-Q101 16-Pin HDSOP EP T/R

Produkt ist nicht verfügbar

IAUS300N10S5N015TATMA1

Description: INFINEON - IAUS300N10S5N015TATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 300 A, 0.0013 ohm, HDSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 300A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 375W
Bauform - Transistor: HDSOP
Anzahl der Pins: 16Pin(s)
Produktpalette: OptiMOS 5
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0013ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 2075 Stücke:

Lieferzeit 14-21 Tag (e)

IAUS300N10S5N015TATMA1

Infineon Technologies

Trans MOSFET N-CH 100V 350A Automotive 16-Pin HDSOP EP T/R

Produkt ist nicht verfügbar

IAUT150N10S5N035

Infineon Technologies

MOSFET MOSFET_(75V 120V(

Produkt ist nicht verfügbar

IAUT150N10S5N035ATMA1

Infineon Technologies

Description: MOSFET N-CH 100V 150A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6110 pF @ 50 V

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

2000+	3.74 EUR
6000+	3.59 EUR

Mindestbestellmenge: 2000

IAUT150N10S5N035ATMA1

Infineon Technologies

Trans MOSFET N-CH 100V 150A Automotive 9-Pin(8+Tab) HSOF T/R

auf Bestellung 2000 Stücke:

Lieferzeit 14-21 Tag (e)

IAUT150N10S5N035ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Case: PG-HSOF-8
On-state resistance: 3.5mΩ
Drain current: 150A
Drain-source voltage: 100V
Mounting: SMD
Power dissipation: 166W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30nC
Technology: OptiMOS™ 5
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUT150N10S5N035ATMA1

Infineon Technologies

Description: MOSFET N-CH 100V 150A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6110 pF @ 50 V

auf Bestellung 7513 Stücke:

Lieferzeit 21-28 Tag (e)

4+	7.67 EUR
10+	6.45 EUR
100+	5.21 EUR
500+	4.64 EUR
1000+	3.97 EUR

Mindestbestellmenge: 4

IAUT150N10S5N035ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Case: PG-HSOF-8
On-state resistance: 3.5mΩ
Drain current: 150A
Drain-source voltage: 100V
Mounting: SMD
Power dissipation: 166W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke

Produkt ist nicht verfügbar

IAUT150N10S5N035ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 9605 Stücke:

Lieferzeit 14-28 Tag (e)

7+	7.72 EUR
10+	6.47 EUR
25+	6.11 EUR
100+	5.25 EUR
250+	4.97 EUR
500+	4.65 EUR
1000+	3.98 EUR

Mindestbestellmenge: 7

IAUT150N10S5N035ATMA1

Infineon Technologies

Trans MOSFET N-CH 100V 150A Automotive AEC-Q101 9-Pin(8+Tab) HSOF T/R

Produkt ist nicht verfügbar

IAUT165N08S5N029ATMA1

Infineon Technologies

IAUT165N08S5N029ATMA1

Produkt ist nicht verfügbar

IAUT165N08S5N029ATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 165A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V

Produkt ist nicht verfügbar

IAUT165N08S5N029ATMA1

Infineon Technologies

Infineon

Produkt ist nicht verfügbar

IAUT165N08S5N029ATMA2

Description: INFINEON - IAUT165N08S5N029ATMA2 - Leistungs-MOSFET, n-Kanal, 80 V, 165 A, 0.0024 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 165A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 167W
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 167W
Bauform - Transistor: HSOF
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0024ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0024ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 1521 Stücke:

Lieferzeit 14-21 Tag (e)

IAUT165N08S5N029ATMA2

Infineon Technologies

Description: MOSFET N-CH 80V 165A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V

Produkt ist nicht verfügbar

IAUT165N08S5N029ATMA2

Infineon Technologies

MOSFET MOSFET_(75V,120V(

auf Bestellung 1932 Stücke:

Lieferzeit 14-28 Tag (e)

8+	7.31 EUR
10+	6.14 EUR
25+	5.77 EUR
100+	4.97 EUR
250+	4.68 EUR
500+	4.08 EUR
1000+	3.77 EUR

Mindestbestellmenge: 8

IAUT165N08S5N029ATMA2

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; 167W; PG-HSOF-8
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 5
On-state resistance: 2.9mΩ
Power dissipation: 167W
Gate charge: 31nC
Polarisation: unipolar
Drain current: 165A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V

Produkt ist nicht verfügbar

IAUT165N08S5N029ATMA2

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; 167W; PG-HSOF-8
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 5
On-state resistance: 2.9mΩ
Power dissipation: 167W
Gate charge: 31nC
Polarisation: unipolar
Drain current: 165A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Anzahl je Verpackung: 2000 Stücke

Produkt ist nicht verfügbar

IAUT165N08S5N029ATMA2

Description: INFINEON - IAUT165N08S5N029ATMA2 - Leistungs-MOSFET, n-Kanal, 80 V, 165 A, 0.0024 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
Verlustleistung: 167W
Kanaltyp: n-Kanal
euEccn: NLR
hazardous: false
Drain-Source-Durchgangswiderstand: 0.0024ohm
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 1521 Stücke:

Lieferzeit 14-21 Tag (e)

IAUT165N08S5N029ATMA2

Infineon Technologies

Trans MOSFET N-CH 80V 165A Automotive 9-Pin(8+Tab) HSOF T/R

Produkt ist nicht verfügbar

IAUT165N08S5N029ATMA2

Infineon Technologies

Description: MOSFET N-CH 80V 165A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V

auf Bestellung 1964 Stücke:

Lieferzeit 21-28 Tag (e)

4+	7.25 EUR
10+	6.09 EUR
100+	4.92 EUR
500+	4.38 EUR
1000+	3.75 EUR

Mindestbestellmenge: 4

IAUT200N08S5N023ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 200A; 200W; PG-HSOF-8
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: PG-HSOF-8
On-state resistance: 2.3mΩ
Gate-source voltage: ±20V
Mounting: SMD
Power dissipation: 200W
Gate charge: 36nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 200A
Anzahl je Verpackung: 2000 Stücke

Produkt ist nicht verfügbar

IAUT200N08S5N023ATMA1

Description: INFINEON - IAUT200N08S5N023ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 200 A, 0.0018 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 200A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 200W
Bauform - Transistor: HSOF
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0018ohm

auf Bestellung 2000 Stücke:

Lieferzeit 14-21 Tag (e)

IAUT200N08S5N023ATMA1

Infineon Technologies

Trans MOSFET N-CH 80V 200A Automotive 9-Pin(8+Tab) HSOF T/R

Produkt ist nicht verfügbar

IAUT200N08S5N023ATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 200A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

2000+	3.89 EUR
6000+	3.73 EUR

Mindestbestellmenge: 2000

IAUT200N08S5N023ATMA1

Description: INFINEON - IAUT200N08S5N023ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 200 A, 0.0018 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 200A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 200W
Bauform - Transistor: HSOF
Anzahl der Pins: 8Pin(s)
Produktpalette: PW Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0018ohm
SVHC: No SVHC (23-Jan-2024)

auf Bestellung 784 Stücke:

Lieferzeit 14-21 Tag (e)

IAUT200N08S5N023ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 4183 Stücke:

Lieferzeit 14-28 Tag (e)

7+	8.06 EUR
10+	6.73 EUR
25+	6.55 EUR
100+	5.46 EUR
250+	5.3 EUR
500+	4.86 EUR
1000+	4.16 EUR

Mindestbestellmenge: 7

IAUT200N08S5N023ATMA1

Description: INFINEON - IAUT200N08S5N023ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 200 A, 0.0018 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 200A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 200W
Bauform - Transistor: HSOF
Anzahl der Pins: 8Pin(s)
Produktpalette: PW Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0018ohm
SVHC: No SVHC (23-Jan-2024)

auf Bestellung 784 Stücke:

Lieferzeit 14-21 Tag (e)

IAUT200N08S5N023ATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 200A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V

auf Bestellung 6485 Stücke:

Lieferzeit 21-28 Tag (e)

4+	7.98 EUR
10+	6.7 EUR
100+	5.42 EUR
500+	4.82 EUR
1000+	4.13 EUR

Mindestbestellmenge: 4

IAUT200N08S5N023ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 200A; 200W; PG-HSOF-8
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: PG-HSOF-8
On-state resistance: 2.3mΩ
Gate-source voltage: ±20V
Mounting: SMD
Power dissipation: 200W
Gate charge: 36nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 200A

Produkt ist nicht verfügbar

IAUT240N08S5N019ATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 240A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 160µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9264 pF @ 40 V

auf Bestellung 1095 Stücke:

Lieferzeit 21-28 Tag (e)

3+	9.1 EUR
10+	7.63 EUR
100+	6.17 EUR
500+	5.49 EUR
1000+	4.7 EUR

Mindestbestellmenge: 3

IAUT240N08S5N019ATMA1

Infineon Technologies

MOSFET MOSFET_(75V,120V(

auf Bestellung 1995 Stücke:

Lieferzeit 14-28 Tag (e)

6+	9.15 EUR
10+	7.7 EUR
25+	7.28 EUR
100+	6.24 EUR
250+	5.88 EUR
500+	5.54 EUR
1000+	4.73 EUR

Mindestbestellmenge: 6

IAUT240N08S5N019ATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 240A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 160µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9264 pF @ 40 V

Produkt ist nicht verfügbar

IAUT240N08S5N019ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 230W; PG-HSOF-8
Case: PG-HSOF-8
Mounting: SMD
On-state resistance: 1.9mΩ
Drain current: 240A
Gate charge: 42nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 230W
Polarisation: unipolar
Kind of package: reel; tape
Type of transistor: N-MOSFET

Produkt ist nicht verfügbar

IAUT240N08S5N019ATMA1

Description: INFINEON - IAUT240N08S5N019ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 240 A, 0.0019 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.8V
euEccn: NLR
Verlustleistung: 230W
Produktpalette: OptiMOS 5 Series
productTraceability: No
Kanaltyp: n-Kanal
Drain-Source-Durchgangswiderstand: 0.0019ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 1678 Stücke:

Lieferzeit 14-21 Tag (e)

IAUT240N08S5N019ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 230W; PG-HSOF-8
Case: PG-HSOF-8
Mounting: SMD
On-state resistance: 1.9mΩ
Drain current: 240A
Gate charge: 42nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 230W
Polarisation: unipolar
Kind of package: reel; tape
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2000 Stücke

Produkt ist nicht verfügbar

IAUT240N08S5N019ATMA1

Infineon Technologies

Trans MOSFET N-CH 80V 240A Automotive 9-Pin(8+Tab) HSOF T/R

Produkt ist nicht verfügbar

IAUT240N08S5N019ATMA1

Description: INFINEON - IAUT240N08S5N019ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 240 A, 0.0019 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 240A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 230W
Gate-Source-Schwellenspannung, max.: 3.8V
euEccn: NLR
Verlustleistung: 230W
Bauform - Transistor: HSOF
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: No
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0015ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0019ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 1678 Stücke:

Lieferzeit 14-21 Tag (e)

IAUT260N10S5N019

auf Bestellung 2000 Stücke:

Lieferzeit 21-28 Tag (e)

IAUT260N10S5N019ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 300W; PG-HSOF-8
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 54nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 260A
On-state resistance: 1.9mΩ

Produkt ist nicht verfügbar

IAUT260N10S5N019ATMA1

Description: INFINEON - IAUT260N10S5N019ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 260 A, 0.0016 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 260A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 300W
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: HSOF
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0016ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0016ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 4642 Stücke:

Lieferzeit 14-21 Tag (e)

IAUT260N10S5N019ATMA1

Infineon Technologies

Description: MOSFET N-CH 100V 260A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 210µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V

auf Bestellung 5577 Stücke:

Lieferzeit 21-28 Tag (e)

3+	11.78 EUR
10+	9.9 EUR
100+	8.01 EUR
500+	7.12 EUR
1000+	6.1 EUR

Mindestbestellmenge: 3

IAUT260N10S5N019ATMA1

Infineon Technologies

Trans MOSFET N-CH 100V 260A Automotive 9-Pin(8+Tab) HSOF T/R

Produkt ist nicht verfügbar

IAUT260N10S5N019ATMA1

Infineon Technologies

Description: MOSFET N-CH 100V 260A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 210µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V

auf Bestellung 4000 Stücke:

Lieferzeit 21-28 Tag (e)

2000+	5.74 EUR

Mindestbestellmenge: 2000

IAUT260N10S5N019ATMA1

Description: INFINEON - IAUT260N10S5N019ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 260 A, 0.0016 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
Verlustleistung: 300W
Kanaltyp: n-Kanal
euEccn: NLR
hazardous: false
Drain-Source-Durchgangswiderstand: 0.0016ohm
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 4642 Stücke:

Lieferzeit 14-21 Tag (e)

IAUT260N10S5N019ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 300W; PG-HSOF-8
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 54nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 260A
On-state resistance: 1.9mΩ
Anzahl je Verpackung: 2000 Stücke

Produkt ist nicht verfügbar

IAUT260N10S5N019ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 2238 Stücke:

Lieferzeit 14-28 Tag (e)

5+	11.47 EUR
10+	9.72 EUR
25+	9.23 EUR
100+	7.98 EUR
250+	7.77 EUR
500+	7.05 EUR
1000+	6.19 EUR

Mindestbestellmenge: 5

IAUT300N08S5N011ATMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 410A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V

auf Bestellung 1244 Stücke:

Lieferzeit 21-28 Tag (e)

2+	13.44 EUR
10+	11.29 EUR
100+	9.14 EUR
500+	8.12 EUR
1000+	6.95 EUR

Mindestbestellmenge: 2

IAUT300N08S5N011ATMA1

INFINEON TECHNOLOGIES

IAUT300N08S5N011 SMD N channel transistors

Produkt ist nicht verfügbar

IAUT300N08S5N011ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

Produkt ist nicht verfügbar

IAUT300N08S5N011ATMA1

Infineon Technologies

IAUT300N08S5N011ATMA1

Produkt ist nicht verfügbar

IAUT300N08S5N011ATMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 410A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V

auf Bestellung 1244 Stücke:

Lieferzeit 21-28 Tag (e)

IAUT300N08S5N011ATMA1

Infineon Technologies

SP005427386

Produkt ist nicht verfügbar

IAUT300N08S5N012

Infineon Technologies

Infineon MOSFET_(75V 120V(

Produkt ist nicht verfügbar

IAUT300N08S5N012ATMA1

Infineon Technologies

SP001434098

Produkt ist nicht verfügbar

IAUT300N08S5N012ATMA1

Infineon Technologies

SP001434098

Produkt ist nicht verfügbar

IAUT300N08S5N012ATMA1

Infineon Technologies

Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V

Produkt ist nicht verfügbar

IAUT300N08S5N012ATMA2

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

Produkt ist nicht verfügbar

IAUT300N08S5N012ATMA2

Infineon Technologies

Trans MOSFET N-CH 80V 300A Automotive 9-Pin(8+Tab) HSOF T/R

auf Bestellung 2000 Stücke:

Lieferzeit 14-21 Tag (e)

IAUT300N08S5N012ATMA2

Infineon Technologies

Description: MOSFET N-CH 80V 300A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V

auf Bestellung 1900 Stücke:

Lieferzeit 21-28 Tag (e)

3+	12.58 EUR
10+	10.57 EUR
100+	8.55 EUR
500+	7.6 EUR
1000+	6.51 EUR

Mindestbestellmenge: 3

IAUT300N08S5N012ATMA2

Infineon Technologies

Trans MOSFET N-CH 80V 300A Automotive AEC-Q101 9-Pin(8+Tab) HSOF T/R

auf Bestellung 5810 Stücke:

Lieferzeit 14-21 Tag (e)

18+	9.08 EUR
23+	6.76 EUR
50+	5.89 EUR
100+	5.37 EUR
200+	4.9 EUR
500+	4.43 EUR
1000+	4.01 EUR

Mindestbestellmenge: 18

IAUT300N08S5N012ATMA2

Description: INFINEON - IAUT300N08S5N012ATMA2 - Leistungs-MOSFET, n-Kanal, 80 V, 300 A, 0.001 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 300A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 375W
Bauform - Transistor: HSOF
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.001ohm
SVHC: No SVHC (23-Jan-2024)

auf Bestellung 16951 Stücke:

Lieferzeit 14-21 Tag (e)

IAUT300N08S5N012ATMA2

Infineon Technologies

Trans MOSFET N-CH 80V 300A Automotive AEC-Q101 9-Pin(8+Tab) HSOF T/R

auf Bestellung 2000 Stücke:

Lieferzeit 14-21 Tag (e)

2000+	3.48 EUR

Mindestbestellmenge: 2000

IAUT300N08S5N012ATMA2

Infineon Technologies

Description: MOSFET N-CH 80V 300A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V

Produkt ist nicht verfügbar

IAUT300N08S5N012ATMA2

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUT300N08S5N012ATMA2

Infineon Technologies

MOSFET MOSFET_(75V,120V(

auf Bestellung 113 Stücke:

Lieferzeit 14-28 Tag (e)

5+	12.66 EUR
10+	10.63 EUR
25+	10.17 EUR
100+	8.61 EUR
250+	8.35 EUR
500+	7.64 EUR
1000+	6.55 EUR

Mindestbestellmenge: 5

IAUT300N08S5N012ATMA2

Infineon Technologies

Trans MOSFET N-CH 80V 300A Automotive AEC-Q101 9-Pin(8+Tab) HSOF T/R

auf Bestellung 2000 Stücke:

Lieferzeit 14-21 Tag (e)

2000+	3.52 EUR

Mindestbestellmenge: 2000

IAUT300N08S5N012ATMA2

Infineon Technologies

Trans MOSFET N-CH 80V 300A Automotive AEC-Q101 9-Pin(8+Tab) HSOF T/R

auf Bestellung 1340 Stücke:

Lieferzeit 14-21 Tag (e)

18+	9.08 EUR
23+	6.76 EUR
50+	5.89 EUR
100+	5.37 EUR
200+	4.9 EUR
500+	4.43 EUR
1000+	4.01 EUR

Mindestbestellmenge: 18

IAUT300N08S5N012ATMA2

Description: INFINEON - IAUT300N08S5N012ATMA2 - Leistungs-MOSFET, n-Kanal, 80 V, 300 A, 0.001 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 300A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 375W
Bauform - Transistor: HSOF
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.001ohm
SVHC: No SVHC (23-Jan-2024)

auf Bestellung 16951 Stücke:

Lieferzeit 14-21 Tag (e)

IAUT300N08S5N014

Infineon Technologies

Infineon MOSFET_(75V 120V(

Produkt ist nicht verfügbar

IAUT300N08S5N014ATMA1

Infineon Technologies

IAUT300N08S5N014ATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 80V 300A Automotive 9-Pin(8+Tab) HSOF T/R - Arrow.com

Produkt ist nicht verfügbar

IAUT300N08S5N014ATMA1

Description: INFINEON - IAUT300N08S5N014ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 300 A, 0.0011 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 300A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: HSOF
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0011ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 9900 Stücke:

Lieferzeit 14-21 Tag (e)

IAUT300N08S5N014ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 300W; PG-HSOF-8
Mounting: SMD
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HSOF-8
On-state resistance: 1.4mΩ
Power dissipation: 300W
Gate charge: 60nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 300A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET

Produkt ist nicht verfügbar

IAUT300N08S5N014ATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 300A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (DC)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13178 pF @ 40 V

auf Bestellung 4172 Stücke:

Lieferzeit 21-28 Tag (e)

3+	11.05 EUR
10+	9.28 EUR
100+	7.51 EUR
500+	6.67 EUR
1000+	5.72 EUR

Mindestbestellmenge: 3

IAUT300N08S5N014ATMA1

Description: INFINEON - IAUT300N08S5N014ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 300 A, 0.0011 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 300A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 300W
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: HSOF
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0011ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0011ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 9900 Stücke:

Lieferzeit 14-21 Tag (e)

IAUT300N08S5N014ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 300W; PG-HSOF-8
Mounting: SMD
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HSOF-8
On-state resistance: 1.4mΩ
Power dissipation: 300W
Gate charge: 60nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 300A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2000 Stücke

Produkt ist nicht verfügbar

IAUT300N08S5N014ATMA1

Infineon Technologies

IAUT300N08S5N014ATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 80V 300A Automotive 9-Pin(8+Tab) HSOF T/R - Arrow.com

Produkt ist nicht verfügbar

IAUT300N08S5N014ATMA1

Infineon Technologies

Trans MOSFET N-CH 80V 300A Automotive 9-Pin(8+Tab) HSOF T/R

Produkt ist nicht verfügbar

IAUT300N08S5N014ATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 300A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (DC)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13178 pF @ 40 V

auf Bestellung 4000 Stücke:

Lieferzeit 21-28 Tag (e)

2000+	5.38 EUR

Mindestbestellmenge: 2000

IAUT300N08S5N014ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 8455 Stücke:

Lieferzeit 14-28 Tag (e)

5+	11.13 EUR
10+	9.36 EUR
25+	8.89 EUR
100+	7.57 EUR
250+	7.44 EUR
500+	6.73 EUR
1000+	5.75 EUR

Mindestbestellmenge: 5

IAUT300N10S5N014ATMA1

INFINEON TECHNOLOGIES

IAUT300N10S5N014 SMD N channel transistors

Produkt ist nicht verfügbar

IAUT300N10S5N014ATMA1

Infineon Technologies

SP005427384

Produkt ist nicht verfügbar

IAUT300N10S5N014ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

Produkt ist nicht verfügbar

IAUT300N10S5N014ATMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tj)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V

auf Bestellung 2917 Stücke:

Lieferzeit 21-28 Tag (e)

2+	14.98 EUR
10+	12.57 EUR
100+	10.17 EUR
500+	9.04 EUR
1000+	7.74 EUR

Mindestbestellmenge: 2

IAUT300N10S5N014ATMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tj)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V

auf Bestellung 2000 Stücke:

Lieferzeit 21-28 Tag (e)

2000+	7.29 EUR

Mindestbestellmenge: 2000

IAUT300N10S5N015

Infineon Technologies

MOSFET MOSFET_(75V 120V(

Produkt ist nicht verfügbar

IAUT300N10S5N015ATMA1

Infineon Technologies

Trans MOSFET N-CH 100V 300A Automotive AEC-Q101 9-Pin(8+Tab) HSOF T/R

auf Bestellung 3450 Stücke:

Lieferzeit 14-21 Tag (e)

15+	11.09 EUR
20+	7.8 EUR
50+	6.66 EUR
100+	6.02 EUR
200+	5.44 EUR
500+	4.86 EUR
1000+	4.36 EUR
2000+	4.34 EUR

Mindestbestellmenge: 15

IAUT300N10S5N015ATMA1

Infineon Technologies

Description: MOSFET N-CH 100V 300A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V

auf Bestellung 4000 Stücke:

Lieferzeit 21-28 Tag (e)

2000+	6.49 EUR

Mindestbestellmenge: 2000

IAUT300N10S5N015ATMA1

Infineon Technologies

Trans MOSFET N-CH 100V 300A Automotive AEC-Q101 9-Pin(8+Tab) HSOF T/R

Produkt ist nicht verfügbar

IAUT300N10S5N015ATMA1

Description: INFINEON - IAUT300N10S5N015ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 300 A, 0.0013 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 300A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 375W
Bauform - Transistor: HSOF
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0013ohm
SVHC: No SVHC (23-Jan-2024)

auf Bestellung 7227 Stücke:

Lieferzeit 14-21 Tag (e)

IAUT300N10S5N015ATMA1

Infineon Technologies

Trans MOSFET N-CH 100V 300A Automotive AEC-Q101 9-Pin(8+Tab) HSOF T/R

auf Bestellung 2000 Stücke:

Lieferzeit 14-21 Tag (e)

2000+	4.52 EUR

Mindestbestellmenge: 2000

IAUT300N10S5N015ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 20323 Stücke:

Lieferzeit 14-28 Tag (e)

4+	13.42 EUR
10+	11.28 EUR
25+	10.89 EUR
100+	9.15 EUR
250+	9.1 EUR
500+	8.11 EUR
1000+	6.94 EUR

Mindestbestellmenge: 4

IAUT300N10S5N015ATMA1

Description: INFINEON - IAUT300N10S5N015ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 300 A, 0.0013 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 300A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 375W
Bauform - Transistor: HSOF
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0013ohm
SVHC: No SVHC (23-Jan-2024)

auf Bestellung 7227 Stücke:

Lieferzeit 14-21 Tag (e)

IAUT300N10S5N015ATMA1

Infineon Technologies

Description: MOSFET N-CH 100V 300A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V

auf Bestellung 5977 Stücke:

Lieferzeit 21-28 Tag (e)

2+	13.31 EUR
10+	11.19 EUR
100+	9.05 EUR
500+	8.05 EUR
1000+	6.89 EUR

Mindestbestellmenge: 2

IAUT300N10S5N015ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300A; 375W; PG-HSOF-8
Case: PG-HSOF-8
Mounting: SMD
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 68nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 300A
Anzahl je Verpackung: 2000 Stücke

Produkt ist nicht verfügbar

IAUT300N10S5N015ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300A; 375W; PG-HSOF-8
Case: PG-HSOF-8
Mounting: SMD
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 68nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 300A

Produkt ist nicht verfügbar

IAUT300N10S5N015ATMA1

Infineon Technologies

Trans MOSFET N-CH 100V 300A Automotive AEC-Q101 9-Pin(8+Tab) HSOF T/R

auf Bestellung 2000 Stücke:

Lieferzeit 14-21 Tag (e)

2000+	4.52 EUR

Mindestbestellmenge: 2000

IAUT300N10S5N015ATMA1

Infineon Technologies

Trans MOSFET N-CH 100V 300A Automotive 9-Pin(8+Tab) HSOF T/R

auf Bestellung 2000 Stücke:

Lieferzeit 14-21 Tag (e)

IAUTN06S5N008ATMA1

Infineon Technologies

MOSFET

auf Bestellung 1000 Stücke:

Lieferzeit 14-28 Tag (e)

4+	14.64 EUR
10+	12.56 EUR
25+	11.36 EUR
100+	10.45 EUR
250+	9.85 EUR
500+	9.2 EUR
1000+	8.29 EUR

Mindestbestellmenge: 4

IAUTN06S5N008ATMA1

Infineon Technologies

Trans MOSFET N-CH 60V 510A 9-Pin(8+Tab) HSOF T/R Automotive AEC-Q101

Produkt ist nicht verfügbar

IAUTN06S5N008GATMA1

Description: INFINEON - IAUTN06S5N008GATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 504 A, 640 µohm, HSOG, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 504A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 358W
Bauform - Transistor: HSOG
Anzahl der Pins: 8Pins
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 640µohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 1766 Stücke:

Lieferzeit 14-21 Tag (e)

IAUTN06S5N008GATMA1

Infineon Technologies

MOSFET

auf Bestellung 1776 Stücke:

Lieferzeit 14-28 Tag (e)

4+	16.59 EUR
10+	14.22 EUR
25+	12.9 EUR
100+	11.86 EUR
250+	11.15 EUR
500+	10.45 EUR
1000+	9.41 EUR

Mindestbestellmenge: 4

IAUTN06S5N008GATMA1

Description: INFINEON - IAUTN06S5N008GATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 504 A, 640 µohm, HSOG, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 504A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 358W
Bauform - Transistor: HSOG
Anzahl der Pins: 8Pins
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 640µohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 1766 Stücke:

Lieferzeit 14-21 Tag (e)

IAUTN06S5N008TATMA1

Description: INFINEON - IAUTN06S5N008TATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 503 A, 630 µohm, HDSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 503A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 358W
Bauform - Transistor: HDSOP
Anzahl der Pins: 16Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 630µohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 940 Stücke:

Lieferzeit 14-21 Tag (e)

IAUTN06S5N008TATMA1

Infineon Technologies

MOSFET

auf Bestellung 3643 Stücke:

Lieferzeit 14-28 Tag (e)

3+	17.45 EUR
10+	14.95 EUR
25+	13.55 EUR
100+	12.45 EUR
250+	11.7 EUR
500+	10.97 EUR
1000+	9.85 EUR

Mindestbestellmenge: 3

IAUTN06S5N008TATMA1

Description: INFINEON - IAUTN06S5N008TATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 503 A, 630 µohm, HDSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 503A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 358W
Bauform - Transistor: HDSOP
Anzahl der Pins: 16Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 630µohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 940 Stücke:

Lieferzeit 14-21 Tag (e)

IAUTN12S5N017ATMA1

Infineon Technologies

Trans MOSFET N-CH 120V 314A

Produkt ist nicht verfügbar

IAUTN12S5N017ATMA1

Description: INFINEON - IAUTN12S5N017ATMA1 - Leistungs-MOSFET, n-Kanal, 120 V, 314 A, 0.0015 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 120V
rohsCompliant: YES
Dauer-Drainstrom Id: 314A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.6V
euEccn: NLR
Verlustleistung: 358W
Bauform - Transistor: HSOF
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0015ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 1910 Stücke:

Lieferzeit 14-21 Tag (e)

IAUTN12S5N017ATMA1

Infineon Technologies

Description: MOSFET_(120V 300V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drain to Source Voltage (Vdss): 120 V

auf Bestellung 2000 Stücke:

Lieferzeit 21-28 Tag (e)

2000+	7.74 EUR

Mindestbestellmenge: 2000

IAUTN12S5N017ATMA1

Description: INFINEON - IAUTN12S5N017ATMA1 - Leistungs-MOSFET, n-Kanal, 120 V, 314 A, 0.0015 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 120V
rohsCompliant: YES
Dauer-Drainstrom Id: 314A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.6V
euEccn: NLR
Verlustleistung: 358W
Bauform - Transistor: HSOF
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0015ohm

auf Bestellung 1910 Stücke:

Lieferzeit 14-21 Tag (e)

IAUTN12S5N017ATMA1

Infineon Technologies

Description: MOSFET_(120V 300V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drain to Source Voltage (Vdss): 120 V

auf Bestellung 3439 Stücke:

Lieferzeit 21-28 Tag (e)

2+	15.89 EUR
10+	13.35 EUR
100+	10.8 EUR
500+	9.6 EUR
1000+	8.22 EUR

Mindestbestellmenge: 2

IAUTN12S5N017ATMA1

Infineon Technologies

MOSFET

auf Bestellung 1465 Stücke:

Lieferzeit 14-28 Tag (e)

4+	16.04 EUR
10+	13.47 EUR
25+	12.69 EUR
100+	10.89 EUR
250+	10.27 EUR
500+	9.67 EUR
1000+	8.84 EUR

Mindestbestellmenge: 4

IAUTN12S5N018GATMA1

Description: INFINEON - IAUTN12S5N018GATMA1 - Leistungs-MOSFET, n-Kanal, 120 V, 310 A, 0.0015 ohm, HSOG, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 120V
rohsCompliant: YES
Dauer-Drainstrom Id: 310A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.6V
euEccn: NLR
Verlustleistung: 358W
Bauform - Transistor: HSOG
Anzahl der Pins: 8Pins
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0015ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 1750 Stücke:

Lieferzeit 14-21 Tag (e)

IAUTN12S5N018GATMA1

Infineon Technologies

Description: MOSFET_(120V 300V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drain to Source Voltage (Vdss): 120 V

auf Bestellung 1764 Stücke:

Lieferzeit 21-28 Tag (e)

2+	16.33 EUR
10+	13.99 EUR
100+	11.65 EUR
500+	10.28 EUR

Mindestbestellmenge: 2

IAUTN12S5N018GATMA1

Description: INFINEON - IAUTN12S5N018GATMA1 - Leistungs-MOSFET, n-Kanal, 120 V, 310 A, 0.0015 ohm, HSOG, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 120V
rohsCompliant: YES
Dauer-Drainstrom Id: 310A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.6V
euEccn: NLR
Verlustleistung: 358W
Bauform - Transistor: HSOG
Anzahl der Pins: 8Pins
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0015ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 1750 Stücke:

Lieferzeit 14-21 Tag (e)

IAUTN12S5N018GATMA1

Infineon Technologies

Description: MOSFET_(120V 300V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drain to Source Voltage (Vdss): 120 V

Produkt ist nicht verfügbar

IAUTN12S5N018GATMA1

Infineon Technologies

MOSFET

auf Bestellung 1688 Stücke:

Lieferzeit 14-28 Tag (e)

4+	16.43 EUR
10+	14.09 EUR
25+	12.79 EUR
100+	11.75 EUR
250+	11.05 EUR
500+	10.37 EUR
1000+	10.11 EUR

Mindestbestellmenge: 4

IAUTN12S5N018GATMA1

Infineon Technologies

Trans MOSFET N-CH 120V 310A 9-Pin(8+Tab) HSOG T/R Automotive AEC-Q101

Produkt ist nicht verfügbar

IAUTN12S5N018TATMA1

Infineon Technologies

Description: MOSFET_(120V 300V)
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drain to Source Voltage (Vdss): 120 V

Produkt ist nicht verfügbar

IAUTN12S5N018TATMA1

Infineon Technologies

MOSFET

auf Bestellung 110 Stücke:

Lieferzeit 14-28 Tag (e)

3+	18.23 EUR
10+	15.63 EUR
25+	14.17 EUR
100+	13 EUR
250+	12.27 EUR
500+	11.49 EUR
1000+	10.32 EUR

Mindestbestellmenge: 3

IAUTN12S5N018TATMA1

Description: INFINEON - IAUTN12S5N018TATMA1 - Leistungs-MOSFET, n-Kanal, 120 V, 309 A, 0.0015 ohm, HDSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 120V
rohsCompliant: YES
Dauer-Drainstrom Id: 309A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.6V
euEccn: NLR
Verlustleistung: 358W
Bauform - Transistor: HDSOP
Anzahl der Pins: 16Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0015ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 1758 Stücke:

Lieferzeit 14-21 Tag (e)

IAUTN12S5N018TATMA1

Infineon Technologies

Trans MOSFET N-CH 120V 309A 16-Pin HDSOP EP T/R Automotive AEC-Q101

Produkt ist nicht verfügbar

IAUTN12S5N018TATMA1

Description: INFINEON - IAUTN12S5N018TATMA1 - Leistungs-MOSFET, n-Kanal, 120 V, 309 A, 0.0015 ohm, HDSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 120V
rohsCompliant: YES
Dauer-Drainstrom Id: 309A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.6V
euEccn: NLR
Verlustleistung: 358W
Bauform - Transistor: HDSOP
Anzahl der Pins: 16Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0015ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 1758 Stücke:

Lieferzeit 14-21 Tag (e)

IAUTN12S5N018TATMA1

Infineon Technologies

Description: MOSFET_(120V 300V)
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drain to Source Voltage (Vdss): 120 V

auf Bestellung 1609 Stücke:

Lieferzeit 21-28 Tag (e)

2+	18.12 EUR
10+	15.53 EUR
100+	12.94 EUR
500+	11.42 EUR

Mindestbestellmenge: 2

IAUZ18N10S5L420ATMA1

Infineon Technologies

Description: MOSFET N-CH 100V 18A TSDSON-8-32
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 8µA
Supplier Device Package: PG-TSDSON-8-32
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 50 V

Produkt ist nicht verfügbar

IAUZ18N10S5L420ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 72A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Pulsed drain current: 72A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUZ18N10S5L420ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 72A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Pulsed drain current: 72A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level

Produkt ist nicht verfügbar

IAUZ18N10S5L420ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

Produkt ist nicht verfügbar

IAUZ18N10S5L420ATMA1

Infineon Technologies

MOSFET_(75V,120V(

auf Bestellung 5000 Stücke:

Lieferzeit 14-21 Tag (e)

IAUZ18N10S5L420ATMA1

Infineon Technologies

Description: MOSFET N-CH 100V 18A TSDSON-8-32
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 8µA
Supplier Device Package: PG-TSDSON-8-32
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 50 V

auf Bestellung 2834 Stücke:

Lieferzeit 21-28 Tag (e)

11+	2.37 EUR
14+	1.92 EUR
100+	1.5 EUR
500+	1.27 EUR
1000+	1.03 EUR
2000+	0.97 EUR

Mindestbestellmenge: 11

IAUZ20N08S5L300ATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 20A 8TSDSON-32
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 8µA
Supplier Device Package: PG-TSDSON-8-32
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 599 pF @ 40 V
Qualification: AEC-Q101

auf Bestellung 5601 Stücke:

Lieferzeit 21-28 Tag (e)

12+	2.18 EUR
15+	1.8 EUR
100+	1.4 EUR
500+	1.18 EUR
1000+	0.96 EUR
2000+	0.91 EUR

Mindestbestellmenge: 12

IAUZ20N08S5L300ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 14A; Idm: 80A; 30W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Features of semiconductor devices: logic level
Kind of package: reel; tape
Technology: OptiMOS™ 5
On-state resistance: 30mΩ
Pulsed drain current: 80A
Power dissipation: 30W
Polarisation: unipolar
Drain current: 14A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V

Produkt ist nicht verfügbar

IAUZ20N08S5L300ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 4975 Stücke:

Lieferzeit 176-190 Tag (e)

24+	2.23 EUR
29+	1.82 EUR
100+	1.42 EUR
500+	1.2 EUR
1000+	0.92 EUR
5000+	0.88 EUR
10000+	0.87 EUR

Mindestbestellmenge: 24

IAUZ20N08S5L300ATMA1

Infineon Technologies

Trans MOSFET N-CH 80V 20A Automotive 8-Pin TSDSON EP T/R

Produkt ist nicht verfügbar

IAUZ20N08S5L300ATMA1

Infineon Technologies

Description: MOSFET N-CH 80V 20A 8TSDSON-32
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 8µA
Supplier Device Package: PG-TSDSON-8-32
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 599 pF @ 40 V
Qualification: AEC-Q101

auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	0.86 EUR

Mindestbestellmenge: 5000

IAUZ20N08S5L300ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 14A; Idm: 80A; 30W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Features of semiconductor devices: logic level
Kind of package: reel; tape
Technology: OptiMOS™ 5
On-state resistance: 30mΩ
Pulsed drain current: 80A
Power dissipation: 30W
Polarisation: unipolar
Drain current: 14A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUZ30N06S5L140ATMA1

Infineon Technologies

SP003244402

auf Bestellung 20000 Stücke:

Lieferzeit 14-21 Tag (e)

IAUZ30N06S5L140ATMA1

Infineon Technologies

Description: MOSFET N-CH 60V 30A TSDSON-8-32
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TSDSON-8-32
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 30 V

auf Bestellung 24415 Stücke:

Lieferzeit 21-28 Tag (e)

13+	2.03 EUR
16+	1.64 EUR
100+	1.28 EUR
500+	1.08 EUR
1000+	0.88 EUR
2000+	0.83 EUR

Mindestbestellmenge: 13

IAUZ30N06S5L140ATMA1

Infineon Technologies

Description: MOSFET N-CH 60V 30A TSDSON-8-32
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TSDSON-8-32
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 30 V

auf Bestellung 20000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	0.79 EUR
10000+	0.75 EUR

Mindestbestellmenge: 5000

IAUZ30N06S5L140ATMA1

Description: INFINEON - IAUZ30N06S5L140ATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 30 A, 0.0112 ohm, TSDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 30A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 33W
Gate-Source-Schwellenspannung, max.: 1.7V
euEccn: NLR
Verlustleistung: 33W
Bauform - Transistor: TSDSON
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0112ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0112ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 14298 Stücke:

Lieferzeit 14-21 Tag (e)

IAUZ30N06S5L140ATMA1

Infineon Technologies

MOSFET MOSFET_)40V 60V)

auf Bestellung 24249 Stücke:

Lieferzeit 14-28 Tag (e)

32+	1.64 EUR
38+	1.37 EUR
100+	1.12 EUR
500+	0.99 EUR
1000+	0.84 EUR
2500+	0.82 EUR
5000+	0.79 EUR

Mindestbestellmenge: 32

IAUZ30N08S5N186ATMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 15A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 13µA
Supplier Device Package: PG-TSDSON-8-32
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 40 V

auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)

11+	2.52 EUR
13+	2.05 EUR
100+	1.59 EUR
500+	1.35 EUR
1000+	1.1 EUR
2000+	1.04 EUR

Mindestbestellmenge: 11

IAUZ30N08S5N186ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

Produkt ist nicht verfügbar

IAUZ30N08S5N186ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7A; Idm: 120A; 41W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7A
Pulsed drain current: 120A
Power dissipation: 41W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 22.7mΩ
Mounting: SMD
Gate charge: 12.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUZ30N08S5N186ATMA1

Infineon Technologies

SP005423086

Produkt ist nicht verfügbar

IAUZ30N08S5N186ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7A; Idm: 120A; 41W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7A
Pulsed drain current: 120A
Power dissipation: 41W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 22.7mΩ
Mounting: SMD
Gate charge: 12.1nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUZ30N08S5N186ATMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-TSDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 15A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 13µA
Supplier Device Package: PG-TSDSON-8-32
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 40 V

auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	0.99 EUR

Mindestbestellmenge: 5000

IAUZ30N10S5L240ATMA1

Description: INFINEON - IAUZ30N10S5L240ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 30 A, 0.0195 ohm, PG-TSDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100
rohsCompliant: YES
Dauer-Drainstrom Id: 30
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Verlustleistung Pd: 45.5
Gate-Source-Schwellenspannung, max.: 1.7
euEccn: NLR
Verlustleistung: 45.5
Bauform - Transistor: PG-TSDSON
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: OptiMOS-5
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0195
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.0195
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 4960 Stücke:

Lieferzeit 14-21 Tag (e)

IAUZ30N10S5L240ATMA1

Infineon Technologies

Description: MOSFET N-CH 100V 30A 8TSDSON-32
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 15A, 10V
Power Dissipation (Max): 45.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 15µA
Supplier Device Package: PG-TSDSON-8-32
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 50 V
Qualification: AEC-Q101

auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	1.15 EUR

Mindestbestellmenge: 5000

IAUZ30N10S5L240ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 31405 Stücke:

Lieferzeit 14-28 Tag (e)

18+	2.94 EUR
22+	2.41 EUR
100+	1.87 EUR
500+	1.59 EUR
1000+	1.26 EUR
2500+	1.22 EUR
5000+	1.14 EUR

Mindestbestellmenge: 18

IAUZ30N10S5L240ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 45.5W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUZ30N10S5L240ATMA1

Infineon Technologies

N Channel Power MOSFET

Produkt ist nicht verfügbar

IAUZ30N10S5L240ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 45.5W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level

Produkt ist nicht verfügbar

IAUZ30N10S5L240ATMA1

Description: INFINEON - IAUZ30N10S5L240ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 30 A, 0.0195 ohm, PG-TSDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100
rohsCompliant: YES
Dauer-Drainstrom Id: 30
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Verlustleistung Pd: 45.5
Gate-Source-Schwellenspannung, max.: 1.7
euEccn: NLR
Verlustleistung: 45.5
Bauform - Transistor: PG-TSDSON
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: OptiMOS-5
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0195
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.0195
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 4960 Stücke:

Lieferzeit 14-21 Tag (e)

IAUZ30N10S5L240ATMA1

Infineon Technologies

Description: MOSFET N-CH 100V 30A 8TSDSON-32
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 15A, 10V
Power Dissipation (Max): 45.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 15µA
Supplier Device Package: PG-TSDSON-8-32
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 9362 Stücke:

Lieferzeit 21-28 Tag (e)

9+	2.94 EUR
11+	2.4 EUR
100+	1.86 EUR
500+	1.58 EUR
1000+	1.29 EUR
2000+	1.21 EUR

Mindestbestellmenge: 9

IAUZ40N06S5L050ATMA1

Infineon Technologies

Description: MOSFET_)40V 60V) PG-TSDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tj)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 29µA
Supplier Device Package: PG-TSDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
Qualification: AEC-Q101

Produkt ist nicht verfügbar

IAUZ40N06S5L050ATMA1

Infineon Technologies

MOSFET MOSFET_)40V 60V)

auf Bestellung 3400 Stücke:

Lieferzeit 14-28 Tag (e)

16+	3.28 EUR
20+	2.68 EUR
100+	2.08 EUR
500+	1.76 EUR
1000+	1.51 EUR
5000+	1.29 EUR
10000+	1.27 EUR

Mindestbestellmenge: 16

IAUZ40N06S5L050ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 252A; 71W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 252A
Power dissipation: 71W
Case: PG-TSDSON-8
Gate-source voltage: ±16V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 36.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUZ40N06S5L050ATMA1

Infineon Technologies

SP005423482

Produkt ist nicht verfügbar

IAUZ40N06S5L050ATMA1

Infineon Technologies

Description: MOSFET_)40V 60V) PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tj)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 29µA
Supplier Device Package: PG-TSDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
Qualification: AEC-Q101

auf Bestellung 4680 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.25 EUR
10+	2.65 EUR
100+	2.06 EUR
500+	1.75 EUR
1000+	1.42 EUR
2000+	1.34 EUR

Mindestbestellmenge: 8

IAUZ40N06S5L050ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 252A; 71W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 252A
Power dissipation: 71W
Case: PG-TSDSON-8
Gate-source voltage: ±16V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 36.7nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUZ40N06S5N050ATMA1

Infineon Technologies

Description: MOSFET N-CH 60V 40A TSDSON-8-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 29µA
Supplier Device Package: PG-TSDSON-8-33
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V

auf Bestellung 10225 Stücke:

Lieferzeit 21-28 Tag (e)

9+	3.17 EUR
11+	2.6 EUR
100+	2.02 EUR
500+	1.71 EUR
1000+	1.39 EUR
2000+	1.31 EUR

Mindestbestellmenge: 9

IAUZ40N06S5N050ATMA1

Infineon Technologies

MOSFET MOSFET_)40V 60V)

auf Bestellung 35165 Stücke:

Lieferzeit 14-28 Tag (e)

22+	2.47 EUR
26+	2.07 EUR
100+	1.71 EUR
500+	1.49 EUR
1000+	1.25 EUR

Mindestbestellmenge: 22

IAUZ40N06S5N050ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 241A; 71W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 241A
Power dissipation: 71W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 30.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUZ40N06S5N050ATMA1

Infineon Technologies

Trans MOSFET N-CH 60V 86A T/R

Produkt ist nicht verfügbar

IAUZ40N06S5N050ATMA1

Infineon Technologies

Description: MOSFET N-CH 60V 40A TSDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 29µA
Supplier Device Package: PG-TSDSON-8-33
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V

auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	1.25 EUR

Mindestbestellmenge: 5000

IAUZ40N06S5N050ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 241A; 71W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 241A
Power dissipation: 71W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 30.5nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUZ40N06S5N105ATMA1

Infineon Technologies

SP005423484

Produkt ist nicht verfügbar

IAUZ40N06S5N105ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 42W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 120A
Power dissipation: 42W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUZ40N06S5N105ATMA1

Infineon Technologies

Description: MOSFET_)40V 60V) PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TSDSON-8-32
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1099 pF @ 30 V
Qualification: AEC-Q101

auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)

12+	2.31 EUR
14+	1.89 EUR
100+	1.47 EUR
500+	1.25 EUR
1000+	1.01 EUR
2000+	0.96 EUR

Mindestbestellmenge: 12

IAUZ40N06S5N105ATMA1

Infineon Technologies

Description: MOSFET_)40V 60V) PG-TSDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TSDSON-8-32
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1099 pF @ 30 V
Qualification: AEC-Q101

auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	0.91 EUR

Mindestbestellmenge: 5000

IAUZ40N06S5N105ATMA1

Infineon Technologies

MOSFET MOSFET_)40V 60V)

Produkt ist nicht verfügbar

IAUZ40N06S5N105ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 42W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 120A
Power dissipation: 42W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUZ40N08S5N100ATMA1

Infineon Technologies

Description: MOSFET N-CH 75V 80A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V
Qualification: AEC-Q101

auf Bestellung 6270 Stücke:

Lieferzeit 21-28 Tag (e)

9+	3.22 EUR
10+	2.64 EUR
100+	2.05 EUR
500+	1.74 EUR
1000+	1.42 EUR
2000+	1.33 EUR

Mindestbestellmenge: 9

IAUZ40N08S5N100ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

Produkt ist nicht verfügbar

IAUZ40N08S5N100ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 24.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUZ40N08S5N100ATMA1

Infineon Technologies

Trans MOSFET N-CH 80V 40A Automotive 8-Pin TSDSON EP T/R

Produkt ist nicht verfügbar

IAUZ40N08S5N100ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 24.2nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUZ40N08S5N100ATMA1

Infineon Technologies

Description: MOSFET N-CH 75V 80A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V
Qualification: AEC-Q101

auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	1.27 EUR

Mindestbestellmenge: 5000

IAUZ40N10S5L120ATMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-TSDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tj)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1589 pF @ 50 V

Produkt ist nicht verfügbar

IAUZ40N10S5L120ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

Produkt ist nicht verfügbar

IAUZ40N10S5L120ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 160A; 62W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 160A
Power dissipation: 62W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 18.5mΩ
Mounting: SMD
Gate charge: 22.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUZ40N10S5L120ATMA1

Infineon Technologies

SP005423087

Produkt ist nicht verfügbar

IAUZ40N10S5L120ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 160A; 62W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 160A
Power dissipation: 62W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 18.5mΩ
Mounting: SMD
Gate charge: 22.6nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUZ40N10S5L120ATMA1

Infineon Technologies

Description: MOSFET_(75V 120V( PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tj)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1589 pF @ 50 V

auf Bestellung 4665 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.33 EUR
10+	2.74 EUR
100+	2.13 EUR
500+	1.8 EUR
1000+	1.47 EUR
2000+	1.38 EUR

Mindestbestellmenge: 8

IAUZ40N10S5N130ATMA1

Description: INFINEON - IAUZ40N10S5N130ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 40 A, 0.0108 ohm, PG-TSDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 40A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 68W
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 68W
Bauform - Transistor: PG-TSDSON
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS-5
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0108ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0108ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 4975 Stücke:

Lieferzeit 14-21 Tag (e)

IAUZ40N10S5N130ATMA1

Infineon Technologies

Description: MOSFET N-CH 100V 40A 8TSDSON-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1525 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 15000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	1.32 EUR
10000+	1.26 EUR

Mindestbestellmenge: 5000

IAUZ40N10S5N130ATMA1

Description: INFINEON - IAUZ40N10S5N130ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 40 A, 0.0108 ohm, PG-TSDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 40A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 68W
Bauform - Transistor: PG-TSDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS-5
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0108ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 4975 Stücke:

Lieferzeit 14-21 Tag (e)

IAUZ40N10S5N130ATMA1

Infineon Technologies

MOSFET MOSFET_(75V 120V(

auf Bestellung 19751 Stücke:

Lieferzeit 14-28 Tag (e)

20+	2.68 EUR
23+	2.27 EUR
100+	1.85 EUR
500+	1.67 EUR
1000+	1.36 EUR
5000+	1.33 EUR

Mindestbestellmenge: 20

IAUZ40N10S5N130ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke

Produkt ist nicht verfügbar

IAUZ40N10S5N130ATMA1

Infineon Technologies

Description: MOSFET N-CH 100V 40A 8TSDSON-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1525 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 20182 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.33 EUR
10+	2.74 EUR
100+	2.13 EUR
500+	1.8 EUR
1000+	1.47 EUR
2000+	1.38 EUR

Mindestbestellmenge: 8

IAUZ40N10S5N130ATMA1

Infineon Technologies

Trans MOSFET N-CH 100V 40A Automotive 8-Pin TSDSON EP T/R

Produkt ist nicht verfügbar

IAUZ40N10S5N130ATMA1

INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

IAUZN04S7N028

Infineon Technologies

SP005831179

Produkt ist nicht verfügbar